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WO2017222116A1 - Échantillon standard d'étalonnage d'un équipement d'analyse à l'échelle nanométrique - Google Patents

Échantillon standard d'étalonnage d'un équipement d'analyse à l'échelle nanométrique Download PDF

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Publication number
WO2017222116A1
WO2017222116A1 PCT/KR2016/012452 KR2016012452W WO2017222116A1 WO 2017222116 A1 WO2017222116 A1 WO 2017222116A1 KR 2016012452 W KR2016012452 W KR 2016012452W WO 2017222116 A1 WO2017222116 A1 WO 2017222116A1
Authority
WO
WIPO (PCT)
Prior art keywords
pattern
pattern portion
pad
calibration standard
standard specimen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2016/012452
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English (en)
Korean (ko)
Inventor
김태근
전동수
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea University Research and Business Foundation
Original Assignee
Korea University Research and Business Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea University Research and Business Foundation filed Critical Korea University Research and Business Foundation
Publication of WO2017222116A1 publication Critical patent/WO2017222116A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01QSCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q40/00Calibration, e.g. of probes
    • G01Q40/02Calibration standards and methods of fabrication thereof
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01QSCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/06711Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N2001/2893Preparing calibration standards

Definitions

  • the present invention particularly relates to calibration standard specimens that can calibrate analytical equipment such as Atomic Force Microscopy (AFM) and Scanning Probe Microscopy (SPM) used for research and development in the nano domain.
  • analytical equipment such as Atomic Force Microscopy (AFM) and Scanning Probe Microscopy (SPM) used for research and development in the nano domain.
  • AFM Atomic Force Microscopy
  • SPM Scanning Probe Microscopy
  • Nanotechnology is a technology that characterizes and controls the properties of a material on a nanoscale, specifically making it possible to modify or modify existing materials or create functions in new materials by appropriately combining atoms or molecules to create new microstructures. It refers to ultra-fine technology.
  • nanotechnology refers to a technology that expresses new functions and excellent characteristics by using nano specificity by controlling and controlling a structure or an arrangement of materials by manipulating and controlling nanometer (nm) -sized atoms or molecules.
  • Nano is a unit that represents one billionth of a nanometer, and one nanometer (nm) is one millionth of a meter, which corresponds to about one-eighth of the thickness of hair and 10 hydrogen atoms side by side.
  • the nanoscale to which nanotechnology is applied corresponds approximately to the size region of molecules.
  • KFPM can measure the work function for semiconductor samples.
  • CAFM refers to a conductive mapping technique in which an electrical signal is sent to a probe based on a conventional scanning probe microscope to image a change in current in a sample.
  • I-V Spectroscopy outputs a graph of the change in current versus voltage, changing the distance between the probe and the sample at a specific point on the sample's nanoscale.
  • the EFM measures the difference in electrostatic force.
  • Embodiments of the present invention have been made to solve the above problems, to provide a calibration standard specimen that can improve the reliability of the measurement data through the calibration and electrical characteristics of the analysis equipment of the nano-scale.
  • the electrical interference between the pattern and the substrate on which the pattern is disposed does not occur so that precise calibration is possible.
  • the present invention provides a pattern for acquiring data showing electrical characteristics according to voltages applied to a plurality of pads at once.
  • the material forming the pattern is selected as various materials to present a reference point of the electrical characteristics.
  • the coating of the cantilever is easily peeled off to improve the durability.
  • Embodiment of the present invention to solve the above problems, a glass substrate; A plurality of pads disposed on the glass substrate and to which a predetermined voltage is applied; A pattern part electrically connected to at least two of the pad parts and measuring a current value by a probe; It provides a calibration standard specimen of the analytical instrument having a nano-scale comprising a; connecting portion electrically connecting between the pad portion and the pattern portion.
  • the pattern part may include a first pattern part having one end contacting the connecting part and the other end of the straight line facing the straight line extending in the X-axis direction and repeatedly crossing each other.
  • the pattern part may include a second pattern part whose one end is in contact with the connection part and the other end is formed to face a straight line extending in the Y-axis direction and repeatedly cross each other.
  • the common line may be disposed parallel to each other, and the branch line may be disposed perpendicular to the common line.
  • the thickness of the pad portion may be greater than the thickness of the pattern portion.
  • the pattern portion may be formed of a conductive material.
  • the calibration standard specimen provides a reference point for the electrical characteristic analysis, and it is possible to more accurately check the abnormality of the nanoscale analysis equipment, thereby improving reliability of the data measured thereafter.
  • the substrate which is one component of the calibration standard specimen, may be made of glass (glass), which is a non-conductor, to be electrically separated from the pattern deposited with the conductive material, thereby preventing interference from occurring.
  • glass glass
  • calibration standard specimens can be optimized for more precise calibration applications.
  • the pattern is arranged in such a way that the straight lines cross each other in the X-axis direction and the straight lines are arranged in the Y-axis direction, respectively. To make the measurement easier.
  • one end of the pattern is connected to each of the connection lines extending from the pads disposed on the glass substrate to measure that different voltages are applied to each pad, thereby facilitating the evaluation of electrical characteristics.
  • the pattern can provide a reference point for electrical characterization using various conductive metal materials.
  • 1 is a plan view of a calibration standard specimen according to one embodiment of the invention.
  • FIG. 2 is an enlarged view of 1 area of FIG. 1.
  • FIG. 3 is a partial perspective view of FIG. 2;
  • FIG. 4 is an enlarged view 2 area of FIG.
  • FIG. 5 is a partial perspective view of FIG. 4.
  • FIG. 6 is an enlarged view 3 region of FIG.
  • FIG. 7 is a partial perspective view of FIG. 6.
  • the calibration standard specimen includes a glass substrate 10, a pad part 20, a pattern part 30, and a connection part 40.
  • Such calibration standard specimens may be limited to dedicated analytical instruments such as AFM, SPM, etc., measured in nanoscale units.
  • the analysis equipment checks whether the surface shape of the pattern part 30 and the pattern part 30 are normally operated by current mapping, surface potential mapping, electrostatic mapping, and the like. do.
  • the analysis equipment may measure a reference value according to the pattern unit 30 formed of various conductive materials and establish it as a reference for the electrical signal, and may be corrected by an inversion method through an evaluation value of the actual measurement sample.
  • the glass substrate 10 provides a base on which the pattern portion 30 may be deposited.
  • This glass substrate 10 is formed of a glass material has a non-conductive characteristics. As a result, it may be electrically separated from the pattern portion 30 of the conductive material, thereby preventing the occurrence of electrical interference. That is, it is suitable for a calibration use.
  • Glass substrate 10 according to an embodiment may be formed in a square shape of 15mm * 15mm.
  • a plurality of pads 20 may be disposed on the glass substrate 10, and a predetermined voltage may be applied to each pad 20 independently.
  • the pad part 20 is formed of a conductive material such as gold (Au), platinum (Pt), silver (Ag), or the like. As a result, current can be supplied to the calibration standard specimen through the pad portion 20.
  • the pad part 20 may be stacked at any position on the surface of the glass substrate 10, but according to one embodiment, the pad part 20 is disposed near the edge and the edge of the glass substrate 10. This allows the terminal and the like having a clip shape to be easily fixed to the pad portion 20.
  • the pad unit 20 may be arranged on the glass substrate 10 having a square shape, one at each corner.
  • the pad unit 20 may be further disposed between the corners and the corners, that is, the intermediate portion of each side forming the edge.
  • the pad portion 20 is preferably formed in a 100mm height in a square shape of 3mm * 3mm.
  • the pattern unit 30 is electrically connected to the pad unit 20 to calibrate the analytical equipment by using a current value measured by the pattern unit 30 by the voltage applied to the pad unit 20, or to set a standard of electrical characteristics. Can provide. At this time, the measurement of the current value is made through a cantilever type probe.
  • the end of the probe has a small needle of the atomic level is close to the surface of the pattern portion 30, the force of the distance difference between the surface atoms of the pattern portion 30 and the atoms located at the end of the probe, that is, the attraction force Or repulsive action.
  • the probe maintains the vibration while changing the position of the probe by the feedback according to the change of the vibration state due to the attraction force or the repulsive force.
  • the distance between the pattern portion 30 and the probe can be kept constant.
  • the position of the probe may be finely measured using the photodiode, and the height and the like of the pattern portion 30 may be imaged using the photodiode.
  • the probe measures the current flowing in the air layer therebetween without being in contact with the conductive pattern portion 30.
  • the measured minute difference current value is implemented as an image through a display unit.
  • the pattern portion 30 is electrically connected to the pad portion 20.
  • the pattern portion 30 may be electrically connected to at least two pad portions 20.
  • the connecting portion 40 is electrically connected between the pad portion 20 and the pattern portion 30, but the connecting portion 40 is formed integrally with the pad portion 20 at the stage where the pad portion 20 is formed. do. Therefore, the connection part 40 has the same material as the pad part 20.
  • the pattern portion 30 has a pattern in which a predetermined pattern is repeatedly formed by a certain rule.
  • the pattern portion 30 according to the exemplary embodiment includes the first pattern portion 31 to the third pattern portion 33. That is, the pattern unit 30 may provide a reference for electrical characteristics by using a plurality of different patterns.
  • the first pattern portion 31 has a form in which one end is in contact with the connecting portion 40 and the other end of the straight line 36 formed in the X-axis direction is repeatedly arranged in the Y-axis direction.
  • one end of the second pattern portion 32 is in contact with the connecting portion 40, and the other end has a form in which the straight line 36 extending in the Y-axis direction is repeatedly arranged in the X-axis direction. That is, the first pattern portion 31 and the second pattern portion 32 are disposed in the horizontal direction and the vertical direction, that is, provide a pattern having two angles.
  • the stage on which the calibration standard specimen is seated is generally only moved in the X-Y axis direction, and no rotation function, ie rotational movement, is provided.
  • the first pattern portion 31 and the second pattern portion 32 have a relatively small size of the corrected standard specimen, thereby improving the inconvenience in that it is difficult to precisely rotate it.
  • the first pattern part 31 is formed while the plurality of straight lines 36 are arranged in one direction.
  • the straight line 36 is electrically connected to the pad part 20 so that a current flows when the voltage is applied to the pad part 20 to have conductivity. At this time, the straight line 36 is scanned by the probe to provide an electrical signal.
  • the straight line 36 is formed in a rectangular shape with each corner having an angle of 90 degrees.
  • the line width of the first pattern portion 31 may be further extended to 5 ⁇ m to improve durability and to improve visibility when aligning a calibration standard specimen.
  • the height is formed to be 20 ⁇ m smaller than the height of the pad portion 20 so that the coating of the cantilever moving while scanning on the surface of the first pattern portion 31 is not easily peeled off.
  • the spacing between these straight lines 36 is formed to be 5 mu m equal to the size of the line width.
  • the first pattern portion 31 may be electrically connected to the pair of pad portions 20. As described above, the pad portion 20 and the pattern portion 30 are electrically connected by the connecting portion 40. Therefore, the first pattern portion 31 is arranged in a cross line with the straight line 36, one end of which is in contact with the connecting portion 40 and the other end of which extends in the X-axis direction. That is, the first pattern portion 31 has a symmetrical structure. In this case, when a voltage is applied to only one of the pads 20, the current value data may be obtained only in the straight line 36 electrically connected thereto.
  • the first pattern part 31 may further include a common line 35 having one end connected to the connection part 40.
  • the straight line 36 is branched from the common line 35. This is useful when the number of the straight lines 36 constituting the first pattern part 31 is large and cannot be arranged to be opposed between the connection parts 40.
  • the straight line 36 constituting the second pattern portion 32 is the same as the shape of the straight line 36 constituting the first pattern portion 31. That is, the line width is 5 ⁇ m, the height of the straight line 36 is 20 ⁇ m, and the interval between the straight lines 36 is 5 ⁇ m. However, the straight line 36 constituting the first pattern portion 31 and the second pattern portion 32 is formed longer in one side than the other side to facilitate the alignment position when aligning the calibration standard specimen. Make it fit.
  • the pattern part 30 may further include a third pad part 20 electrically connected to each pad part 20 disposed on the glass substrate 10.
  • the connection part 40 extends from each of the pad parts 20 and is electrically connected to the common line 35 included in the third pattern part 33.
  • the third pattern part 33 includes the common line 35 and the branch line 37.
  • One end of the common line 35 contacts the connection part 40.
  • the branch lines 37 may be formed of a plurality of branches branched from the common line 35.
  • the branch lines 37 may be arranged to face each other and repeatedly cross each other between the adjacent common lines 35.
  • the common lines 35 are arranged parallel to each other.
  • the branch line 37 is disposed perpendicular to the common line 35.
  • the first pattern portion 31 and the second pattern portion 32 are in a form in which a predetermined voltage is applied to one of the pair of pad portions 20, and a zero voltage is applied to the other of the pad portions 20, that is, on and off. Used for simple comparison of both.
  • the third pattern part 33 may be compared with each other according to the magnitude of the voltage applied to the pads 20, unlike the voltages being differently applied to each of the pad parts 20. Therefore, the pattern unit 30 may establish the standard of electrical characteristics through three different patterns.
  • the first pattern portion 31 to the third pattern portion 33 constituting the pattern portion 30 may be disposed on, for example, the upper side, the middle side, and the lower side on the glass substrate 10.
  • the present invention is not limited thereto and may be disposed at any position in the glass substrate 10.
  • the thickness of the pad portion 20 is larger than the thickness of the pattern portion 30. This improves the durability of the probe even with repeated use of analytical equipment, as described above, to ensure reliable data.
  • the pattern portion 30 is formed by depositing different conductive materials.
  • the conductive material may be, for example, gold (Au), silver (Ag), copper (Cu), aluminum (Al), and the like, and the deposition strength may vary depending on the type.
  • the glass substrate 10 whose surface was cleaned is prepared.
  • the photoresist is applied onto the glass substrate 10 and then rotated at a high speed to spread the photoresist evenly on the glass substrate 10.
  • a region in which the pad part 20 and the connection part 40 are formed on the glass substrate 10 is exposed through the exposure process.
  • the conductive material is then deposited on the exposed portion.
  • the photoresist remaining on the glass substrate 10 is removed to form the pad portion 20 and the connecting portion 40 as one body.
  • the pattern portion 30 is further formed in the same manner as before.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Radiology & Medical Imaging (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

L'invention concerne un échantillon standard d'étalonnage d'un équipement d'analyse à échelle nanométrique, comprenant : un substrat de verre ; une pluralité de parties de tampon disposées sur le substrat de verre et auxquelles une tension prédéterminée est appliquée ; une partie de modèle électriquement connectée à au moins deux des parties de plage et à partir de laquelle une valeur de courant est mesurée par une sonde ; et une partie de connexion permettant de connecter électriquement les parties de plage et la partie de modèle
PCT/KR2016/012452 2016-06-24 2016-11-01 Échantillon standard d'étalonnage d'un équipement d'analyse à l'échelle nanométrique Ceased WO2017222116A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020160078991A KR101783602B1 (ko) 2016-06-24 2016-06-24 나노 스케일을 갖는 분석 장비의 보정 표준 시편
KR10-2016-0078991 2016-06-24

Publications (1)

Publication Number Publication Date
WO2017222116A1 true WO2017222116A1 (fr) 2017-12-28

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Application Number Title Priority Date Filing Date
PCT/KR2016/012452 Ceased WO2017222116A1 (fr) 2016-06-24 2016-11-01 Échantillon standard d'étalonnage d'un équipement d'analyse à l'échelle nanométrique

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KR (1) KR101783602B1 (fr)
WO (1) WO2017222116A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09293887A (ja) * 1995-12-30 1997-11-11 Lg Semicon Co Ltd 半導体素子及びその製造方法
EP1369730A1 (fr) * 2002-05-24 2003-12-10 Fujitsu Limited Ensemble de micro-miroirs comportant un substrat de miroir et un substrat de câblage séparé par un espaceur conducteur
US20070062261A1 (en) * 2005-09-22 2007-03-22 Rockwell Scientific Licensing Llc Microelectromechanical (MEM) fluid health sensing device and fabrication method
KR20090008239A (ko) * 2006-04-17 2009-01-21 캐스터, 인크. 납땜 공정 개선을 위한 열 전도 미터 분석기
KR100992883B1 (ko) * 2008-05-02 2010-11-09 고려대학교 산학협력단 주사탐침열현미경의 열전탐침 및 그 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09293887A (ja) * 1995-12-30 1997-11-11 Lg Semicon Co Ltd 半導体素子及びその製造方法
EP1369730A1 (fr) * 2002-05-24 2003-12-10 Fujitsu Limited Ensemble de micro-miroirs comportant un substrat de miroir et un substrat de câblage séparé par un espaceur conducteur
US20070062261A1 (en) * 2005-09-22 2007-03-22 Rockwell Scientific Licensing Llc Microelectromechanical (MEM) fluid health sensing device and fabrication method
KR20090008239A (ko) * 2006-04-17 2009-01-21 캐스터, 인크. 납땜 공정 개선을 위한 열 전도 미터 분석기
KR100992883B1 (ko) * 2008-05-02 2010-11-09 고려대학교 산학협력단 주사탐침열현미경의 열전탐침 및 그 제조방법

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