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WO2017119381A1 - Corps fritté en oxyde, son procédé de production, et cible de pulvérisation cathodique - Google Patents

Corps fritté en oxyde, son procédé de production, et cible de pulvérisation cathodique Download PDF

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Publication number
WO2017119381A1
WO2017119381A1 PCT/JP2016/089029 JP2016089029W WO2017119381A1 WO 2017119381 A1 WO2017119381 A1 WO 2017119381A1 JP 2016089029 W JP2016089029 W JP 2016089029W WO 2017119381 A1 WO2017119381 A1 WO 2017119381A1
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WIPO (PCT)
Prior art keywords
sintered body
oxide sintered
niobium
zinc
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2016/089029
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English (en)
Japanese (ja)
Inventor
伊藤謙一
原浩之
原慎一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
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Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2016230493A external-priority patent/JP6885038B2/ja
Application filed by Tosoh Corp filed Critical Tosoh Corp
Priority to CN201680077981.7A priority Critical patent/CN108430949B/zh
Priority to US16/068,596 priority patent/US10669208B2/en
Priority to KR1020187019722A priority patent/KR102649404B1/ko
Publication of WO2017119381A1 publication Critical patent/WO2017119381A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Definitions

  • the present invention relates to an oxide sintered body containing zinc, niobium, aluminum and oxygen as constituent elements and a sputtering target comprising the sintered body.
  • Niobium oxide target which is a general high refractive index material, cannot obtain the conductivity of the target capable of DC discharge in the atmospheric pressure sintering method, so by reducing the sintered body under high temperature and pressure conditions, The conductivity of the sintered body is increased (for example, see Patent Document 1).
  • composite oxide sintered bodies made of zinc, aluminum, and titanium have been reported as high refractive index targets (see, for example, Patent Document 3).
  • the zinc oxide target containing titanium achieves a high refractive index of 2.0 or more, and it is said that a complex oxide sintered body having a stable DC discharge performance with less arcing is obtained.
  • titanium has an extremely low film formation rate of half or less compared to niobium having the same high refractive index material, and there is a problem that a target containing titanium has low productivity of sputtering.
  • the sintered body obtained by mixing niobium oxide or titanium oxide and zinc oxide, which is a high refractive index material as described above, is an insulating material that is a composite oxide of a conductive phase mainly composed of zinc oxide, a high refractive index material and zinc oxide.
  • An object of the present invention is to provide an oxide sintered body used for a sputtering target capable of obtaining a high refractive index film having a high film formation rate without splashing from the target surface even during high power film formation. It is.
  • the present inventors have intensively studied a composite oxide sintered body composed of a ZnO phase and a Zn 3 Nb 2 O 8 phase.
  • the Zn 3 Nb 2 O 8 phase is a material with extremely low conductivity, and the bulk resistance of the single phase is 10 11 ⁇ ⁇ cm or more.
  • the ZnO phase exhibits slight conductivity due to oxygen deficiency or solid solution substitution of a small amount of niobium.
  • the present inventors lowered the resistance between the insulating Zn 3 Nb 2 O 8 phase and the conductive ZnO phase while lowering the resistance of the ZnO phase due to solid solution of aluminum.
  • the present invention resides in the following [1] to [8].
  • An oxide sintered body characterized by being: [2] The oxide sintered body according to [1], wherein the relative density is 98% or more.
  • [4] The oxide sintered body according to any one of [1] to [3], wherein the crystal grain size of the ZnO phase in the oxide sintered body is 3 ⁇ m or less.
  • [5] The oxide sintered body according to any one of [1] to [4], wherein the bulk resistance value is 100 ⁇ ⁇ cm or less.
  • [6] A sputtering target using the oxide sintered body according to any one of [1] to [5] as a target material.
  • the present invention provides an oxide sintered body having zinc, niobium, aluminum and oxygen as constituent elements.
  • the niobium contained in the oxide sintered body of the present invention has an atomic ratio of Nb / (Zn + Nb + Al) of 0.00 when the contents of the constituent elements zinc, niobium and aluminum are Zn, Nb and Al, respectively. It is 076 to 0.289, and preferably 0.135 to 0.230.
  • Nb / (Zn + Nb + Al) is less than 0.076, the refractive index of the film obtained by sputtering decreases, and when Nb / (Zn + Nb + Al) exceeds 0.289, the Zn 3 Nb 2 O 8 phase increases. And resistance becomes high.
  • the aluminum contained in the oxide sintered body has an atomic ratio of Al / (Zn + Nb + Al) of 0.006 to 0.031, preferably 0.013 to 0.025.
  • Al / (Zn + Nb + Al) is less than 0.006, the ZnAl 2 O 4 phase is not sufficiently formed, and splash is generated from the target surface during sputtering.
  • Al / (Zn + Nb + Al) exceeds 0.031, the transmittance on the low wavelength side of the thin film formed by sputtering is lowered, which is not preferable.
  • the oxide sintered body of the present invention is composed of three phases of a ZnO phase, a ZnAl 2 O 4 phase, and a Zn 3 Nb 2 O 8 phase if the constituent elements zinc, niobium, and aluminum are the compositions described above. Splash from the target surface during sputtering is suppressed, and excellent discharge characteristics are obtained.
  • the maximum intensity of a diffraction peak (corresponding to a ZnO phase) having an incident angle (2 ⁇ ) in X-ray diffraction between 35.9 ° and 36.5 ° is I 1 , 36.6 ° to 37.2 °.
  • the amount of metal elements (impurities) other than zinc, niobium, and aluminum is preferably 1 atm% or less, and more preferably 0.1 atm% or less.
  • the oxide sintered body of the present invention preferably has a relative density of 98% or more, more preferably 99% or more, and particularly preferably 100% or more.
  • each crystal phase ZnO phase, ZnAl 2 O 4 when assuming no solid solution).
  • Phase, Zn 3 Nb 2 O 8 phase weighted average. Therefore, the density of the sintered body may exceed the theoretical density defined by the present invention.
  • the density of the sintered body is preferably 5.57 g / cm 3 or more, more preferably 5.61 g / cm 3 or more, and particularly preferably further 5.70 g / cm 3 or more.
  • the average crystal grain size of the ZnO phase in the oxide sintered body is preferably 3 ⁇ m or less, more preferably 2 ⁇ m or less, and further 1.5 ⁇ m or less. Is particularly preferred. If the crystal grain size of the ZnO phase is too large, electric field concentration on the ZnO phase during sputtering becomes significant, ZnO is easily reduced, and splash is generated from the target surface.
  • the bulk resistance value is preferably 100 ⁇ ⁇ cm or less, and 50 ⁇ ⁇ cm. The following is more preferable.
  • the input load to the target is normalized by the power density (W / cm 2 ) obtained by dividing the input power by the target area.
  • the typical power density in normal production is about 1 to 4 W / cm 2 , but in the present invention, an oxide that becomes a high-quality target material with extremely little arcing even under high power conditions exceeding 4 W / cm 2 A sintered body is obtained.
  • the method for producing an oxide sintered body according to the present invention includes zinc oxide powder, niobium pentoxide powder and aluminum oxide as raw material powder, the atomic ratio of elements is the content of zinc, niobium and aluminum, respectively Zn, Nb and Al. After that, the mixture was mixed so that Nb / (Zn + Nb + Al) was 0.076 to 0.289 and Al / (Zn + Nb + Al) was 0.006 to 0.031, and molded using the obtained mixed powder. The obtained molded body is fired.
  • the raw material powder is preferably an oxide powder of zinc oxide, niobium pentoxide, and aluminum oxide powder in consideration of handleability.
  • the purity of each raw material powder is preferably 99.9% or more, more preferably 99.99% or more. If impurities are included, it causes abnormal grain growth in the firing process.
  • Nb / (Zn + Nb + Al) is 0. It is necessary to mix so that Al / (Zn + Nb + Al) is 0.006 to 0.031 and 0.06 to 0.289.
  • Nb / (Zn + Nb + Al) is more preferably 0.135 to 0.230
  • Al / (Zn + Nb + Al) is more preferably 0.013 to 0.025.
  • the ZnO powder is refined in the mixed powder as a raw material, and Nb 2 O 5 It is important to uniformly mix and pulverize the powder and the trace amount of Al 2 O 3 powder.
  • the BET value of the mixed powder before mixing is obtained from the weighted average according to the following calculation formula from the mixing ratio of each raw material powder.
  • the BET value of the ZnO powder used is BZ [m 2 / g]
  • the weight ratio is WZ [wt%]
  • the BET value of the Nb 2 O 5 powder is BN [m 2 / g]
  • the weight ratio is WN [wt%].
  • the weighted average of the BET values of the mixed powder is (BZ ⁇ WZ + BN ⁇ WN + BA ⁇ WA) / 100 is calculated.
  • the BET value of the mixed powder after mixing is preferably 6 m 2 / g or more, more preferably 7 m 2 / g or more, and further 10 m 2 / g. The above is particularly preferable.
  • the method for pulverizing and mixing the powder is not particularly limited as long as it can be sufficiently pulverized and mixed.
  • dry and wet media stirring mills using balls and beads such as zirconia, alumina, and nylon resin are not limited.
  • mixing methods such as media-less container rotating mixing and mechanical stirring mixing.
  • Specific examples include a ball mill, a bead mill, an attritor, a vibration mill, a planetary mill, a jet mill, a V-type mixer, a paddle type mixer, and a twin-shaft planetary agitation mixer.
  • a wet bead mill for example, a wet method capable of enhancing dispersibility and having a relatively high grinding ability.
  • the solid content concentration in the slurry is 35% to 65%, more preferably 50% to 60%. If the solid content concentration is too high, the pulverizing ability is lowered and the desired powder physical property value cannot be obtained.
  • zirconia beads are used for the grinding media, and the bead diameter is in the range of ⁇ 0.2 to 0.3 mm where the grinding power can be increased.
  • the amount of beads introduced into the mill is in the range of 75 to 90% as the bead filling rate relative to the mill volume.
  • the type of dispersant is not particularly limited, but it is important to keep the change in slurry viscosity below a certain level. Depending on the processing batch, the slurry viscosity may increase due to some factor even under the same conditions. In this case, by appropriately adjusting the amount of the dispersing agent and keeping the slurry viscosity within 500 to 2000 mPa ⁇ s, Stable powder physical properties can be obtained.
  • the slurry temperature also needs to be strictly controlled.
  • the mill inlet slurry temperature is controlled to 12 ° C. or lower, preferably 9 ° C. or lower, and constantly controlled so that the slurry outlet slurry temperature is 18 ° C. or lower.
  • the rotation speed of the beads is 6 to 15 m / sec as the peripheral speed at the outermost periphery of the bead stirring blade.
  • the peripheral speed is low, the pulverization force is weakened, and the processing time until the desired powder physical properties are reached becomes long, and the productivity is remarkably deteriorated.
  • the peripheral speed is high, the pulverization force is increased, but the heat generated by the pulverization increases, the slurry temperature rises and the operation becomes difficult.
  • the slurry after the wet mixing treatment can be used as it is in a wet molding method such as cast molding, but in the case of dry molding, the powder fluidity is high and the compact density is uniform. It is desirable to use a dry granulated powder. Although it does not limit about the granulation method, spray granulation, fluidized bed granulation, rolling granulation, stirring granulation, etc. can be used. In particular, it is desirable to use spray granulation which is easy to operate and can be processed in large quantities. In the molding process, molding aids such as polyvinyl alcohol, acrylic polymer, methylcellulose, waxes, and oleic acid may be added to the raw material powder.
  • the molding method is not particularly limited, and a molding method capable of molding the mixed powder obtained in the step (1) into a desired shape can be appropriately selected. Examples thereof include a press molding method, a casting molding method, and an injection molding method.
  • the molding pressure is not particularly limited as long as the molded body is free from cracks and the like and can be handled, and the molding density is preferably as high as possible. Therefore, it is also possible to use a method such as cold isostatic pressing (CIP) molding.
  • CIP pressure is preferably for 1 ton / cm 2 or more to obtain a sufficient consolidation effect, more preferably 2 ton / cm 2 or more, particularly preferably 2 ⁇ 3ton / cm 2.
  • the molded body obtained in the step (2) is fired.
  • a firing method capable of obtaining a high-density and uniform sintered body can be appropriately selected, and a general resistance heating type electric furnace, microwave heating furnace, or the like can be used.
  • the firing holding temperature is 1000 to 1300 ° C.
  • the holding time is preferably 0.5 to 10 hours, more preferably 1 to 5 hours.
  • the density of the sintered body decreases, which is not preferable.
  • the firing temperature is high and the holding time is long, crystal grains grow and cause microscopic segregation of each element, which is not preferable. If the crystal grain size of the ZnO phase is too large, electric field concentration on the ZnO phase during sputtering becomes remarkable, ZnO is easily reduced, and splash is generated from the target surface.
  • the firing atmosphere can be either an air atmosphere or an oxygen atmosphere which is an oxidizing atmosphere. Baking in an air atmosphere is possible without requiring special atmosphere control.
  • the oxide sintered body is composed of three phases of a ZnO phase, a ZnAl 2 O 4 phase, and a Zn 3 Nb 2 O 8 phase, and an incident angle (2 ⁇ ) in X-ray diffraction is
  • the maximum intensity of the diffraction peak (corresponding to the ZnO phase) existing between 35.9 ° and 36.5 ° is I 1 and exists between 36.6 ° and 37.2 ° (ZnAl 2 O 4 phase
  • the diffraction intensity ratio I 2 / I 1 is 0.03 or more when the maximum intensity of the diffraction peak is I 2 .
  • the obtained sintered body is formed into a desired shape such as a plate shape, a circular shape, or a cylindrical shape by using a machining machine such as a surface grinder, a cylindrical grinder, a lathe, a cutting machine, or a machining center. To grind. Furthermore, a sputtering target using the sintered body of the present invention as a target material is obtained by bonding (bonding) a backing plate made of oxygen-free copper, titanium, or the like to the backing tube or backing tube using indium solder or the like as necessary. Can do. In order to suppress arcing immediately after the start of use, the surface roughness (Ra) of the target is preferably 1 ⁇ m or less, and more preferably 0.5 ⁇ m or less.
  • the contents of zinc, niobium and aluminum in the thin film containing zinc, niobium, aluminum and oxygen as the constituent elements are Zn, Nb and Al, respectively.
  • a thin film characterized by the above can be obtained.
  • Such a thin film has a high refractive index and can be suitably used as an insulating film.
  • the oxide sintered body of the present invention When used as a sputtering target, there is no splash from the target surface and stable DC discharge is possible even under high oxygen partial pressure sputtering conditions when high power is applied or arcing is likely to occur. Thus, an insulating film having a high film formation rate and a high refractive index can be obtained.
  • d (a + b + c) / ((a / 5.606) + (b / 5.734) + (c / 4.700)) (1)
  • the refractive index of the thin film sample obtained by the film formation evaluation was measured with a spectroscopic ellipsometer (trade name: M-2000V-Te, manufactured by JA Woollam), and the value at a wavelength of 550 nm was used. Using a photometer (trade name: U-4100, manufactured by Hitachi High-Technologies Corporation), the maximum value at a wavelength of 350 to 450 nm was measured as a value including the transmittance of the glass substrate.
  • the film formation rate was calculated by preparing a thin film sample formed for 30 minutes under sputtering conditions for film formation evaluation, and measuring the film thickness with a surface shape measuring instrument (trade name: Dektak 3030, manufactured by ULVAC).
  • Example 1 A zinc oxide powder having a BET value 3.8 m 2 / g, niobium oxide powder having a BET value 5.4 m 2 / g, and aluminum oxide powder having a BET value 12m 2 / g (all 99.9% or higher), Nb / (Zn + Nb + Al) was weighed to a ratio of 0.230 and Al / (Zn + Nb + Al) to a ratio of 0.020. The weighed powder was slurried with 10 kg of pure water, and 0.1 wt% of the polyacrylate dispersant was added to the total powder amount to prepare a slurry with a solid content concentration of 60%.
  • a bead mill with an internal volume of 2.5 L is filled with 85% ⁇ 0.3 mm zirconia beads, and the slurry is circulated in the mill at a mill peripheral speed of 7.0 m / sec and a slurry supply rate of 2.5 L / min. Processed. Further, the temperature was controlled within the range of 8-9 ° C. of the slurry supply tank and 14-16 ° C. of the slurry outlet temperature, and the circulation number (pass number) in the mill was 15 times.
  • the obtained slurry is spray-dried, and the dried powder is passed through a 150 ⁇ m sieve, and a molded body of 120 mm ⁇ 120 mm ⁇ 8 mmt is produced at a pressure of 300 kg / cm 2 by a press molding method, and then 2 ton / cm 2 . CIP-treated with pressure.
  • Examples 2 to 8, Comparative Examples 1 to 5 A sintered body was produced in the same manner as in Example 1 except that the composition was changed to the contents shown in Table 1 (in Example 7, the number of passes of the bead mill was changed to 10). In Comparative Examples 3 and 4, the bulk resistance of the sintered body was high and DC discharge was not possible. Table 1 shows the results of sputtering evaluation of the obtained sintered body and sputtering target.
  • Example 9 The same conditions as in Example 1 except that the grinding conditions of the bead mill and the firing conditions using a microwave (frequency: 2.45 GHz) heating-type firing furnace (furnace volume: 300 mm ⁇ 300 mm ⁇ 300 mm) were changed as follows.
  • the sintered body was produced by the method.
  • Table 1 shows the results of sputtering evaluation of the obtained sintered body and sputtering target.
  • Temperature rising rate 200 ° C. to 1250 ° C. 900 ° C./hr
  • Air temperature cooling rate Up to 950 ° C 400 ° C / hr 200 ° C./hr after 950 ° C.
  • Example 10 A sintered body was produced in the same manner as in Example 9 except that the firing temperature using the microwave heating furnace was 1150 ° C. Table 1 shows the results of sputtering evaluation of the obtained sintered body and sputtering target.
  • Example 11 Using a zinc oxide powder having a BET value 9.6 m 2 / g raw material powder, niobium oxide powder having a BET value 7.9 m 2 / g (all 99.9% or higher), the firing temperature using a microwave oven A sintered body was produced in the same manner as in Example 9 except that was set to 1100 ° C. Table 1 shows the results of sputtering evaluation of the obtained sintered body and sputtering target. (Measurement of thin film resistivity) The resistivity of the thin film obtained in each of Examples 1 to 11 was measured by a four-terminal method using a Loresta HP MCP-T410 (manufactured by Mitsubishi Yuka). All the thin film resistors were high resistance films of 10 8 ⁇ ⁇ cm or more.
  • the oxide sintered body according to the present invention is expected to be used for a sputtering target capable of obtaining a high refractive index film because it has a high film formation rate without splashing from the target surface even during high power film formation.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

L'invention concerne un corps fritté en oxyde utilisé pour une cible de pulvérisation cathodique qui présente une grande vitesse de formation de film et est exempt d'une projection de la surface cible, même pendant la formation de film à haute puissance, et qui permet d'obtenir un film ayant un indice de réfraction élevé. La présente invention utilise un corps fritté en oxyde qui contient, comme éléments constitutifs, du zinc, du niobium, de l'aluminium et de l'oxygène et où, si le Zn, le Nb et l'Al représentent respectivement les teneurs en zinc, en niobium et en aluminium, le Zn, le Nb et l'Al satisfont : Nb/(Zn + Nb + Al) = 0,076 à 0,289 ; et Al/(Zn + Nb + Al) = 0,006 à 0,031.
PCT/JP2016/089029 2016-01-08 2016-12-28 Corps fritté en oxyde, son procédé de production, et cible de pulvérisation cathodique Ceased WO2017119381A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201680077981.7A CN108430949B (zh) 2016-01-08 2016-12-28 氧化物烧结体、其制造方法及溅射靶
US16/068,596 US10669208B2 (en) 2016-01-08 2016-12-28 Oxide sintered body, method for producing same and sputtering target
KR1020187019722A KR102649404B1 (ko) 2016-01-08 2016-12-28 산화물 소결체, 그 제조 방법 및 스퍼터링 타깃

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016-002924 2016-01-08
JP2016002924 2016-01-08
JP2016-230493 2016-11-28
JP2016230493A JP6885038B2 (ja) 2016-01-08 2016-11-28 酸化物焼結体、その製造方法及びスパッタリングターゲット

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WO2017119381A1 true WO2017119381A1 (fr) 2017-07-13

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000119062A (ja) * 1998-02-16 2000-04-25 Japan Energy Corp 光透過膜及び光透過膜形成用スパッタリングタ―ゲット
JP2009221589A (ja) * 2008-03-19 2009-10-01 Tosoh Corp 酸化物焼結体からなるスパッタリングターゲット
JP2013036073A (ja) * 2011-08-05 2013-02-21 Sumitomo Metal Mining Co Ltd Ｚｎ−Ｓｎ−Ｏ系酸化物焼結体とその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000119062A (ja) * 1998-02-16 2000-04-25 Japan Energy Corp 光透過膜及び光透過膜形成用スパッタリングタ―ゲット
JP2009221589A (ja) * 2008-03-19 2009-10-01 Tosoh Corp 酸化物焼結体からなるスパッタリングターゲット
JP2013036073A (ja) * 2011-08-05 2013-02-21 Sumitomo Metal Mining Co Ltd Ｚｎ−Ｓｎ−Ｏ系酸化物焼結体とその製造方法

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