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WO2017191267A1 - Composant optoélectronique et procédé de fabrication d'un composant optoélectronique - Google Patents

Composant optoélectronique et procédé de fabrication d'un composant optoélectronique Download PDF

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Publication number
WO2017191267A1
WO2017191267A1 PCT/EP2017/060677 EP2017060677W WO2017191267A1 WO 2017191267 A1 WO2017191267 A1 WO 2017191267A1 EP 2017060677 W EP2017060677 W EP 2017060677W WO 2017191267 A1 WO2017191267 A1 WO 2017191267A1
Authority
WO
WIPO (PCT)
Prior art keywords
sealing material
lead frame
housing body
section
frame portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2017/060677
Other languages
German (de)
English (en)
Inventor
Matthias Goldbach
Christian Ziereis
Ludwig POLLICH
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2017191267A1 publication Critical patent/WO2017191267A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

Definitions

  • the invention relates to an optoelectronic component and to a method for producing an optoelectronic component.
  • optoelectronic semiconductor chips can be mounted on a leadframe section and the leadframe section can be overmolded with an injection-molded body.
  • the optoelectronic semiconductor chip can be a light-emitting semiconductor chip .
  • the semiconductor chips can be covered with a potting material, for example made of silicone. It may happen that between the material of the housing body and the lead frame, a flow channel is present through which the potting material can reach the back of the lead frame section and thus on the housing bottom. It can happen that the potting material covers the back of the lead frame portion from ⁇ and difficult so an electrical contact of the opto-electro ⁇ African component.
  • An object of the invention is to provide an optoelectronic component in which a passage of potting material through flow channels between the lead frame portion and the housing body prevents or at least is difficult.
  • the quality of the optoelectronic components ⁇ rule is improved.
  • An optoelectronic component has a first conductor ⁇ frame section and a housing body.
  • the housing body adjoins the first leadframe section.
  • a sealing material is arranged ⁇ , wherein the sealing material is at least partially covered by the housing body. This can mean that the sealing material is arranged completely between the first conductor frame section and the housing body.
  • parts of the sealing material are not covered by the Ge ⁇ housing body or the first lead frame portion, but exposed with respect to the first lead frame portion and the housing body.
  • An optoelectronic semiconductor chip is arranged on the first leadframe section. This optoelectronic semiconductor chip is at least partially covered with a potting material.
  • the casting material additionally adjoins the first leadframe section and the housing body. By arranged between the housing body and the first lead frame section
  • Sealing material prevents or at least impedes penetration of any flow channels which may have occurred between the first leadframe section and the housing body during the production process of the optoelectronic component.
  • the sealing material thus seals approximately resulting flow channels between the first lead frame section and the housing body or prevents the emergence of flow channels.
  • the sealing material to a mecha ⁇ African bias Due to the mechanical bias of the sealing material is an improved seal between the first lead frame portion and the sealing material and zwi ⁇ tween the sealing material and the housing body causes.
  • the pretension of the sealing material can be produced by, for example, that the sealing material has a certain elasticity and ty is compressed from the first lead frame portion and the Ge ⁇ koruse emotions.
  • Em is another advantage of the pretension of the sealing material, characterized that different thermal expansion coefficient from Ausdeh ⁇ housing body and the first lead frame portion can be compensated for any. If the housing body and the first leadframe section have different thermal expansion coefficients, temperature changes lead to stresses in the housing. A biased sealing material can then compensate for the different expansion coefficients caused by the different expansion of the housing body and the first leadframe portion with a temperature change by the elastic sealing material conforms to both the housing body and the first leadframe portion.
  • the seal material is resistant to corrosion ⁇ constantly to oxygen and / or hydrogen sulfide. If, due to thermal expansion or other reasons, the housing body is detached from the first leadframe section, during the production process
  • the mechanical adhesion between the sealing material and the first leadframe section is greater than the mechanical adhesion between the housing body and the first leadframe section.
  • the sealing material has a rectangular cross-section.
  • a rectangular cross-section of the sealing material is advantageous because a simple Ge ⁇ staltung of the sealing material is possible.
  • the sealing material can be applied, for example, as a planar element, in particular as a film, on the first lead frame section and then punched out. As a result, the rectangular cross-section of the sealing material can arise.
  • the sealing material is arranged on an edge of the first leadframe section and projects beyond the edge of the first leadframe section.
  • the sealing material is formed as a film ⁇ .
  • a film can be applied simply flat to the first leadframe section. It is also possible to provide TERIAL the film to at least one lead frame which contains the first lead frame portion and possibly a further conductor frame portion, to bring ⁇ and thus more lead frame portions with Dichtma-.
  • the sealing material is designed to be electrically insulating. This is beneficial if that
  • the sealing material adjacent to other current-carrying components of the opto-electronic device and is to be prevented that a short circuit between the first lead frame portion and other current-carrying elements of the optoelectronic device occurs.
  • the sealing material to a synthetic material ⁇ , one circuit board material or a hard entflamm ⁇ cash composite.
  • the materials are well suited as a sealing material, especially if they are additionally elastic.
  • the sealing material is arranged circumferentially around the optoelectronic semiconductor chip on the first leadframe section. Due to the circumferential arrangement the sealing material around the optoelectronic semiconductor chip is also achieved a circumferential seal for the potting material between the first lead frame portion and the housing body.
  • the first leadframe section and the housing body form a cavity.
  • the opto-electro ⁇ African semiconductor chip is disposed within the cavity.
  • the cavity is at least partially filled with the potting material.
  • the potting material may include, for example, a converter or other optical elements such as scattering particles for the optoelectronic device.
  • the device has a second leadframe section.
  • the housing body adjoins the second leadframe section.
  • the sealing material abuts both the first and second leadframe sections and is connected to both leadframe sections.
  • the second leadframe section can be used, for example, for the electrical contacting of a second electrical contact of the optoelectronic semiconductor chip .
  • the device has a second leadframe section.
  • the housing body adjoins the second leadframe section.
  • the second Porterrahmenab ⁇ section has a further sealing material, wherein an improved seal between the second lead frame section and the housing body is ⁇ acts by the further sealing material.
  • the sealing material and the further sealing material are not connected to each other.
  • the second lead frame portion has a separate, white ⁇ teres sealing material the sealing of F physicallyka- nals between the second lead frame portion and the Ge ⁇ housing body takes over.
  • a method for producing an optoelectronic construction elements is performed by a lead frame is provided ⁇ section first. Subsequently, a Dichtma ⁇ material is applied to the lead frame section. A Materi ⁇ al is formed such that the material forms a housing body. The material adjoins the lead frame section and the sealing material. Subsequently, an opto ⁇ electronic semiconductor chip is applied to the lead frame section. Finally, the optoelectronic semi ⁇ conductor chip is covered with a potting material. By on ⁇ bring the sealing material may provide an improved seal between the lead frame portion and the case body are achieved.
  • the process of the lead frame portion is provided in that first a plate is provided, wherein the plate is subsequently patterned in egg ⁇ NEN lead frame having a plurality of lead frame portions.
  • the structuring can take place, for example, by a stamping process, an etching process, a laser structuring process.
  • the structuring of the plate takes place before the application of the sealing material. This means that the panel is first patterned into the leadframe with the leadframe sections. Subsequently, the sealing material is applied to one or more of the Porterrahmenab ⁇ sections.
  • the struc ⁇ centering of the plate only after the application of the Dichtmateri- takes place as.
  • a plate is provided to which the sealing material is applied.
  • ⁇ IOd the plate is structured in a lead frame having lead frame sections.
  • the method additionally comprises the steps of applying the sealing material over the area and structuring the sealing material.
  • a film which is provided as a sealing material, can be applied flat to the plate or the leadframe with the lead frame sections . The film can then be struc ⁇ riert, so that the desired shape of the sealing material is obtained.
  • the surface application of the sealing material is carried out by placing a film on one or more lead frame sections or the plate before the plate has been structured in leadframe sections.
  • Fig. 1 shows a cross-sectional view of an optoelectronic device 100.
  • the optoelectronic device 100 includes a first lead frame portion 110 and a GeHousekör ⁇ per 120.
  • the first leadframe section 110 may be formed in one piece or from a plurality of layers.
  • the housing body 120 adjoins the first Porterrahmenabab ⁇ section 110.
  • a sealing material 130 is angeord ⁇ net between the first lead frame portion 110 and the housing body 120.
  • the sealing material 130 is partially covered by the housing ⁇ body 120.
  • the sealing material 130 has a trapezoidal cross-section.
  • On the first lead frame section 110 an optoelectronic semiconductor chip 150 is arranged.
  • the optoelectronic semiconductor chip 150 is partially covered with a potting material 160.
  • the Vergussmate ⁇ rial 160 also adjoins the first lead frame portion 110, the housing body 120 and the sealing material 130 at.
  • the sealing material 130 thus adjoins the first leadframe section 110,
  • the encapsulation material 130 instead of the tra ⁇ pezförmigen cross section also has a different cross-section ⁇ .
  • This other cross section can for example be a run of ⁇ , curved, convex, concave or triangular cross-section.
  • Other cross sections are possible.
  • the sealing material 130 completely between the first lead frame portion 110 and the housing body 120 is arranged without touching the potting material 160.
  • the sealing material 130 is set up to seal any flow channels between the first leadframe section 110 and the housing body 120, so that no potting material between the leadframe section 110 and the housing body 120 can reach the underside 101 of the optoelectronic component.
  • the sealing material 130 may be arranged circumferentially around the optoelectronic semiconductor chip ⁇ rule 130th It is also mög ⁇ Lich that the sealing material 130 is U-shaped, the optoelectronic semiconductor chip 130 is partially disposed circumferentially. Further, the sealing material may be linearly arranged on the first Lei ⁇ terrahmenabêt 120 130 and, for example be arranged along only one side of the semiconductor chip 130th
  • the sealing material 130 can also be arranged such that the first leadframe section 110 and the housing body 120 essentially surround the sealing material 130 and the potting material 160 is in contact with the sealing material 130 only in the region of any flow channels that may occur.
  • Fig. 2 shows a cross section through a further optoelekt ⁇ ronisches device 100.
  • the opto-electronic device 100 includes a first lead frame portion 110, a housing body 120, a sealing material 130, an opto ⁇ electronic semiconductor chip 150 and a potting material 160.
  • the housing body 120 forms together with the first
  • Lead frame portion 110 which is inte ⁇ grated in the housing body 120, a cavity 125 in which the optoelectronic semiconductor chip 150 is arranged. Furthermore, the cavity 125 is partially filled with the potting material 160.
  • the Dichtmate- rial 130 is disposed at an edge 111 of the first Porterrahmenab ⁇ section 110 and has a rectangular cross ⁇ section.
  • the sealing material 130 may be circumferentially around the optoelectronic semiconductor chip 150 or not umlau- fend be formed around the optoelectronic semiconductor chip 150.
  • the sealing material 130 is in turn configured to complicate the formation of flow channels between the first lead frame portion 110 and the housing body 120.
  • the sealing material 130 is bounded by the first leadframe section 110 and the housing body 120 and does not adjoin the potting material 160 outside of any existing flow channels. However, it is also possible that the
  • Sealant 130 analogous to FIG. 1 adjacent to both the first Lei ⁇ terrahmenabites 110 and to the housing body 120 and the potting material 160.
  • the sealing effect of the sealing material 130 can be achieved in that the sealing material 130 is under a mechanical bias and is compressed between the first lead frame portion 110 and the housing body 120.
  • the sealing material fills the smallest gaps between the first lead frame portion 110 and the housing body 120 and thus allows the seal between the first lead frame portion 110 and the housing body 120 such that no or little potting material 160 on the sealing material 130 over and between the first lead frame portion 110 and the housing body can reach the bottom 101 of the optoelectronic component 100.
  • the sealing material 130 is compressed by 5% to 15%, preferably by 10%, as a result of the mechanical prestressing, ie a dimension of the sealing material 130 is reduced by 5 "6 to 15%, preferably by 10%.
  • the mechanical adhesion between the sealing material 130 and the first lead frame portion 110 is greater than the mechanical bond be- see the housing body 120 and the first lead frame portion 110.
  • This can be achieved, for example ⁇ to that of the housing body 120 and the sealing material 130 consist of different materials. This would require the casting material as it flows through a flow channel between the first lead frame portion 110 and the housing body 120 to flow around the sealing material 130 and so ⁇ with, in the event that a flow channel between the first lead frame portion 110 and the housing body 120 is present, a longer path cover as if no sealing material 130 would be provided. This improves the sealing of flow channels between the housing body 120 and the first leadframe section 110.
  • FIG. 3 shows a further cross section through an optoelectronic component 100, which essentially corresponds to the optoelectronic component 100 of FIG. 2.
  • the sealing material is attached ⁇ assigns, to the edge 111 of the first lead frame portion 110 of the sealing material 130 the edge 111 of the first lead frame portion 110 projects beyond. Thereby, the path for the potting material 160 between the first Anthonyrahmenab ⁇ section 110 and the housing body 120 is further extended.
  • the sealing material 130 may protrude beyond the edge 111 of the first leadframe section by at least 5%, preferably at least 15%, particularly preferably at least 35%, of the width of the sealing material 130.
  • FIG. 4 shows that a housing body 120 is arranged around an outer edge area.
  • the sealing material 130 is integrated.
  • the middle within the cavity 125 formed by the housing body 120, there is an optoelectronic semiconductor chip 150, which is enclosed by a potting material 160.
  • the potting material 160 is thus located in this cross-sectional plane between the optoelectronic semiconductor chip 150 and the housing body
  • the sealing material 130 is arranged circumferentially around the optoelectronic ⁇ African semiconductor chip 150.
  • the sealing material 130 is formed as a film.
  • the sealing material is designed to be electrically insulating.
  • the sealing material comprises a plastic, a printed circuit board material or a flame retardant composite material.
  • FIG. 5 shows a cross section through a further optoelectronic component 100.
  • the optoelectronic component 100 has a second conductor frame section 112, which is likewise integrated into the housing body 120.
  • the sealing material 130 adjoins both the first leadframe section 110 and the second leadframe section 112.
  • An optoelectronic semiconductor chip 150 is arranged within a cavity 125 formed by the housing body 120 and the leadframe sections 110, 112.
  • a bonding wire 151 serves to additionally electrically contact the optoelectronic semiconductor chip 150 with the second leadframe section 112.
  • the cavity 125 is filled with a potting material 160.
  • the sealing material 130 is adjacent to thenatirah- menabête 110, 112, the housing body 120 and the cast material Ver ⁇ 160 on.
  • the sealing material 120 is enclosed in this area by the leadframe sections 110, 112 and the housing body 120.
  • FIG. 6 shows a plan view of the first Porterrahmenab ⁇ section 110, the second lead frame section 112 and the sealing material 130 of FIG. 5, wherein the housing body 120 and the optoelectronic semiconductor chip 150 are not yet arranged on or on the first lead frame portion 110.
  • the sealing material 130 is substantially in the shape of an eight on the edges of the lead frame portions 110, 112 at ⁇ arranged and adjacent to both the first Porterrahmenab- cut 110 as well as to the second lead frame section 112.
  • the sealing material 130 may be made of an electrically insulating material to avoid a short circuit between the first lead frame portion 110 and the second lead frame portion 112.
  • the sealing material 130 is arranged circumferentially around both Porterrahmenab ⁇ sections 110, 112 and protrudes beyond the edge of the Lei ⁇ terrahmenabitese 110, 112th
  • Fig. 7 shows a cross section through a further exporting ⁇ approximately example of an optoelectronic device 100 to a first lead frame portion 110 and a second Lei ⁇ terrahmenabites 112.
  • the embodiment of FIG. 7 corresponds essentially to Fig. 5.
  • the sealing material 130 is only arranged on the first lead frame portion 110 ⁇ , while another sealing material 131 adjacent to the second lead frame portion 112.
  • the two leadframe ⁇ sections 110, 112 thus have two separate sealing materials 130, 131, each for the seal for the
  • Potting material 160 between the lead frame sections 110, 112 and the housing body 120 provide.
  • the sealing materials 130, 131 may be identical or different.
  • the sealing materials 130, 131 may be used as a film and / or
  • Seal materials 130, 131 have a plastic, a printed circuit ⁇ tenmaterial or a flame retardant composite material.
  • the sealing materials 130, 131 may be circumferentially formed around the leadframe sections 110, 112 or non-circumferentially.
  • the sealing material 130 is adjacent to the first Lei ⁇ terrahmenabêt 110 and the housing body 120 and is completely surrounded by the first lead frame portion 110 and the housing body 120th
  • the further sealing material 131 is adjacent to the second lead frame portion 112 and the Ge ⁇ koruse stresses 120 and is of the second lead frame portion 112 and the housing body 120 completely enclosed.
  • the sealing materials 130, 131 may also not be completely enclosed by the housing material 120 and the lead frame sections 110, 112 and adjoin the potting material 160.
  • Fig. 8 shows a top view of the lead frame portions 110, 112 with the sealing materials 130, 131 of Fig. 7.
  • the sealing materials 130, 131 are each on the edge of the lead frame portions 110, arranged 112 and around the Porterrah ⁇ menabêt 110, 112 circulating, without the Dichtmateria ⁇ lines 130, 131 touch each other.
  • the sealing material 130 is arranged circumferentially around the first conductor frame section 110 and projects beyond the edge of the first leadframe section 110.
  • the further sealing material 131 is arranged circumferentially around the second leadframe section 112 and projects beyond the edge of the second leadframe section 112.
  • the sealing material 130 Corro ⁇ sion resistant to oxygen and / or hydrogen sulfide. Should the housing body 120 detach from the first leadframe section 110 due to thermal expansion or for other reasons, hydrogen sulfide or generally oxygen from the air can reach the sealing material 130 during the production process.
  • FIG. 9 to 14 show the left side of a cross-section and the right side respectively, a plan view of intermediates during the preparation of a optoelekt- tronic device 100.
  • the optoelekt ⁇ elec- tronic device 100 as shown in Fig. 14 corresponds to the optoelectronic ⁇ rule component FIG. 5.
  • FIG. 9 shows a detail of a plate 113 with a sealing material 130 applied to the plate 113
  • Sealing material 130 is placed flat on the plate 113 ⁇ .
  • the sealing material 130 covers the entire plate 113, so that in the plan view only the sealing material 130 can be seen.
  • the plate 113 may be made of metal, in particular of a metal sheet, for example a copper sheet. From here, only the portion of the panel comprising two lead frame sections 110, 112 for an optoelectronic device 100 is shown. However, it is also possible to produce a plurality of opto ⁇ electronic components 100 starting from a plate 113, for which a separating step can then be provided.
  • Fig. 10 shows the plate 113 of Fig. 9 for another
  • Method step in which the plate 113 of FIG. 9 has been structured into a first leadframe section 110 and a second leadframe section 112.
  • the structuring can be done, for example, by a stamping process or a laser cutting process or an etching process.
  • the sealing material 130 is still present in the same shape as in FIG. 9, so that only the sealing material 130 can still be seen in the plan view.
  • FIG. 11 shows the leadframe sections 110, 112 of FIG. 10 after a further method step.
  • the sealing material 130 was in the area of lead frame portions 110, 112 struc ⁇ riert so that in plan view an eight arranged in a curved scribed sealing material 130 each having an exposed upper ⁇ surface of the lead frame portions 110, 112 in the free Be ⁇ range of the eight-shaped sealing material 130 results.
  • the sealing material 130 are patterned and only then the Me ⁇ tallplatte 113. 9 It may also be provided that an already pre-structured sealing material 130 is applied to the metal plate 113 or the Porterrahmenab ⁇ sections 110, 112.
  • Fig. 12 shows the lead frame portions 110 with the sealing material 130 after a housing body was formed around the Lei ⁇ terrahmenabête 110, 112,120.
  • the housing body 120 encloses the reasonable arranged in the outer edge areas of parts of the sealing material 130.
  • the between at ⁇ the lead frame portions 110, 112 arranged in central portion 133 of the sealing material 130 is not from Gezzau ⁇ seève 120 covered but limited only to its Bottom 132 between the two lead frame portions 110, 112 to the housing body 120 at.
  • the first leadframe section 110 and the second leadframe ⁇ section 112 can be seen with the intermediate sealing material 130. Otherwise, further parts of the Porterrahmenab ⁇ sections 110, 112 and the sealing material 130 from 120 Gekorusekör- covered and enclosed.
  • FIG. 13 shows the optoelectronic component 100 after a further method step, in which an optoelectronic semiconductor chip 150 is applied to the first leadframe section 110.
  • the optoelectronic semiconductor chip 150 ⁇ be found in through the housing body 120 and the lead frame portions 110, 112 formed cavity 125.
  • ei ⁇ nem bonding wire 151 is of the optoelectronic semiconductor chip 150 electrically conductively connected to the second lead frame portion 112.
  • FIG. 14 shows the optoelectronic component 100 after a further method step, in which the cavity 125 formed by the housing body 120 and the leadframe sections 110, 112 has been filled up by a potting material 160.
  • the cavity 125 formed by the housing body 120 and the leadframe sections 110, 112 has been filled up by a potting material 160.
  • the housing body 120 and the potting material 160 in the cavity 125 can now be seen.
  • FIG. 15 shows a leadframe 114 with four first leadframe sections 110 and four second leadframe sections 112.
  • the first leadframe sections and second leadframe sections are in each case arranged next to one another and not directly connected to one another.
  • the lead frame 114 is set up to enable a total of four optoelectronic components.
  • the lead frame 114 can be singled at the locations indicated by arrows by, for example, a saw cut after a housing body not shown in FIG. 15 has been created.
  • Fig. 16 shows the lead frame 114 of Fig.
  • FIGS. 15 and 16 can now be embedded in a housing body and thus forms the starting point for four optoelectronic semiconductor components.
  • the sealing material 130 to the lead frame portions 110, 112 is not completely circumferentially on ⁇ ordered, but are present in the gaps 115, sealing material 130 in the region of the webs.
  • the leadframe sections 110, 112 and the webs 115 are each covered at the edge with the sealing material 130 and thereby the sealing material 130 is not arranged circumferentially around the Porterrahmenab ⁇ sections 110, 112, after the opto ⁇ electronic components 100th were isolated.
  • the lead frame 114 includes fewer or more than four first lead frame portions 110 and second conductor ⁇ frame portions 112th

Landscapes

  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

L'invention concerne un composant optoélectronique (100) comprenant une première partie de grille de connexion (110) et un corps de boîtier (120), le corps de boîtier (120) étant adjacent à la première partie de grille de connexion (110). Un matériau d'étanchéité (130) est placé sur la première partie de grille de connexion (110) et est au moins partiellement recouvert par le corps de boîtier (120). Une puce semiconductrice optoélectronique (150), qui est au moins partiellement recouverte d'un matériau de scellement (160), est disposée sur la première partie de grille de connexion (110). Le matériau de scellement (160) est adjacent à la première partie de grille de connexion (110) et au corps de boîtier (120). L'invention concerne également un procédé de fabrication d'un tel composant optoélectronique.
PCT/EP2017/060677 2016-05-04 2017-05-04 Composant optoélectronique et procédé de fabrication d'un composant optoélectronique Ceased WO2017191267A1 (fr)

Applications Claiming Priority (2)

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DE102016108369.0A DE102016108369A1 (de) 2016-05-04 2016-05-04 Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements
DE102016108369.0 2016-05-04

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120273820A1 (en) * 2011-04-26 2012-11-01 Advanced Optoelectronic Technology, Inc. Led package and method for making the same
EP2631957A1 (fr) * 2012-02-21 2013-08-28 LG Innotek Co., Ltd. Dispositif électroluminescent
US20140197442A1 (en) * 2011-07-29 2014-07-17 Lg Innotek Co., Ltd. Optical Device Package and Method of Manufacturing the Same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005041064B4 (de) * 2005-08-30 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102007017855A1 (de) * 2007-04-16 2008-10-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120273820A1 (en) * 2011-04-26 2012-11-01 Advanced Optoelectronic Technology, Inc. Led package and method for making the same
US20140197442A1 (en) * 2011-07-29 2014-07-17 Lg Innotek Co., Ltd. Optical Device Package and Method of Manufacturing the Same
EP2631957A1 (fr) * 2012-02-21 2013-08-28 LG Innotek Co., Ltd. Dispositif électroluminescent

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