WO2017164566A1 - Apparatus for forming electromagnetic wave shielding film for semiconductor package and method for forming electromagnetic wave shielding film for semiconductor package - Google Patents

Abstract

The present invention relates to an apparatus for forming an electromagnetic wave shielding film for a semiconductor package and a method for forming an electromagnetic wave shielding film for a semiconductor package and, more specifically, to an apparatus for forming an electromagnetic wave shielding film for a semiconductor package and a method for forming an electromagnetic wave shielding film for a semiconductor package enabling a viscous solution to be applied on a precise area of a material such as a semiconductor component and at a precise volume. An apparatus for forming an electromagnetic wave shielding film for a semiconductor package and a method for forming an electromagnetic wave shielding film for a semiconductor package, according to the present invention, enable precise adjustment of the amount of a viscous solution applied and fine adjustment of the application area of the viscous solution.

Description

Electromagnetic shielding film forming apparatus of semiconductor package and electromagnetic shielding film forming method of semiconductor package

The present invention relates to an electromagnetic wave shielding film forming apparatus of a semiconductor package and an electromagnetic wave shielding film forming method of a semiconductor package, and more particularly, an apparatus for forming a shielding film for blocking residual waves on the upper and side surfaces of a semiconductor package and the electromagnetic wave by the apparatus A method for forming a shielding film.

In the semiconductor package, an electromagnetic shielding film is generally formed on an outer surface of the semiconductor package in order to prevent emission of electromagnetic waves or damage of an internal circuit by external electromagnetic waves.

Conventionally, the electromagnetic wave shielding film was formed by the method of forming a conductive film in a semiconductor package by a sputtering (deposition) process.

In the case of the method by the sputtering process, there is a problem in that the conductive film is not formed to a uniform thickness on the side surface of the semiconductor package. In addition, heat generated during the sputtering process may damage the semiconductor device inside the semiconductor package. Another problem is that the cost of the process itself increases.

A method of applying a conductive solution to a semiconductor package using a pump for applying a solution has also been attempted, but there is a problem in that it is not easy to apply a conductive solution to the side surface of the semiconductor package. In addition, there is a problem in that the thickness of the conductive film is unevenly applied between the edges of the semiconductor package and the position away from the edges due to the surface tension of the conductive solution. In particular, in the method of applying the solution by continuously discharging the droplets used in the conventional solution dispenser, there is a high possibility of the problem of thickness unevenness due to the surface tension of the solution.

SUMMARY OF THE INVENTION The present invention has been made to solve the problems described above, and an electromagnetic wave shielding film forming apparatus of a semiconductor package and a method for forming an electromagnetic wave shielding film of a semiconductor package capable of applying a conductive solution with a uniform thickness on the upper and side surfaces of the semiconductor package. It aims to provide.

The electromagnetic wave shielding film forming apparatus of the semiconductor package of the present invention for solving the object as described above, in the electromagnetic wave shielding film forming apparatus of the semiconductor package to coat the conductive solution in order to form the electromagnetic shielding film on the outer surface of the semiconductor package, the conductive solution Spraying gas in a direction inclined with respect to the vertical direction so that the first nozzle disposed in the downward direction so as to spray the gas and the spraying direction of the conductive solution sprayed from the first nozzle are changed toward the side of the semiconductor package A first spray module having a tilt nozzle and a first spray supply unit supplying the conductive solution to the first nozzle in a spray form; A first spray transfer unit configured to transfer the first nozzle and the tilt nozzle of the first spray module to the semiconductor package; A second nozzle provided toward the upper surface of the semiconductor package to spray the conductive solution on the upper surface of the semiconductor package, and a second spray supply unit supplying the conductive solution in the form of a spray to the second nozzle; Spray module; A second spray transfer unit configured to transfer a second nozzle of the second spray module with respect to the semiconductor package; And a material transfer unit for transferring the semiconductor package to the first spray module and the second spray module.

In addition, the electromagnetic wave shielding film forming method of the semiconductor package of the present invention is a method for forming an electromagnetic wave shielding film of a semiconductor package in which a conductive solution is coated in order to form an electromagnetic wave shielding film on the outer surface of the semiconductor package. The first spray module includes a nozzle, a tilt nozzle formed in a direction inclined with respect to the vertical direction and spraying gas, and a first spray supply unit supplying the conductive solution in a spray form to the first nozzle. Spraying the conductive solution on the side surface of the semiconductor package; (b) an upper surface of the semiconductor package using a second spray module including a second nozzle formed toward the upper surface of the semiconductor package and a second spray supply unit supplying the conductive solution to the second nozzle in a spray form; Spraying the conductive solution; And (c) transferring the semiconductor package from the lower side of one of the first spray module and the second spray module to the lower side of the other.

The electromagnetic wave shielding film forming apparatus of the semiconductor package and the electromagnetic wave shielding film forming method of the semiconductor package of the present invention has an advantage that the conductive solution can be applied to the upper surface and side surfaces of the semiconductor package with a uniform thickness.

In addition, the electromagnetic shielding film forming apparatus of the semiconductor package and the electromagnetic shielding film forming method of the semiconductor package of the present invention has the advantage that the thickness of the conductive solution applied to the upper and side surfaces of the semiconductor package can be precisely and accurately adjusted.

1 is a plan view of an electromagnetic shielding film forming apparatus of a semiconductor package according to an embodiment of the present invention.

FIG. 2 is a front view of the electromagnetic wave shielding film forming apparatus of the semiconductor package shown in FIG. 1.

3 is a schematic diagram illustrating a first spray supply unit of the electromagnetic wave shielding film forming apparatus of the semiconductor package shown in FIG. 1.

4 is a schematic diagram illustrating another embodiment of a first spray supply unit of the electromagnetic wave shielding film forming apparatus of the semiconductor package shown in FIG. 1.

Hereinafter, an electromagnetic wave shielding film forming apparatus of a semiconductor package according to the present invention will be described in detail with reference to the drawings.

1 is a plan view of an electromagnetic wave shielding film forming apparatus of a semiconductor package according to an embodiment of the present invention, Figure 2 is a front view of the electromagnetic wave shielding film forming apparatus of a semiconductor package shown in FIG.

1 and 2, the electromagnetic wave shielding film forming apparatus of the semiconductor package according to the present embodiment includes a first spray module 100, a first spray transfer unit 200, a second spray module 300, and a second spray transfer unit ( 400 and the material transfer unit 500.

The first spray module 100 applies a conductive solution to the side surface of the semiconductor package (C) and the second spray module 300 applies a conductive solution to the upper surface of the semiconductor package (C). The first spray module 100 is transferred to the front and rear, left and right by the first spray transfer unit 200 and is lifted up and down. The second spray module 300 is transferred to the front, rear, left and right by the second spray transfer unit 400.

The material transfer unit 500 transfers the plurality of semiconductor packages C mounted on the tray T from the lower side of the first spray module 100 and the second spray module 300.

The first spray module 100 includes a first nozzle 101, a tilt nozzle 104, and a first spray supply unit 102. The first nozzle 101 is disposed downward to spray the conductive solution. The tilt nozzle 104 is arranged in a direction inclined with respect to the vertical direction. The spraying direction of the conductive solution sprayed from the first nozzle 101 is changed by spraying gas from the tilt nozzle 104. The direction of the conductive solution injected from the first nozzle 101 is inclined laterally by the tilt nozzle 104, so that the conductive solution can be injected onto the side surface of the semiconductor package C. The first spray module 100 of the present embodiment includes four tilt nozzles 104. Four tilt nozzles 104 are arranged so as to face the front, rear, left and right directions, respectively. By the four tilt nozzles 104, the first spray module 100 according to the present embodiment is directed toward the front, rear, left, and right sides of the semiconductor package C with respect to the direction of the conductive solution sprayed from the first nozzle 101. Can be adjusted. 3 and 4 illustrate four tilt nozzles 104 arranged in the same direction for convenience.

Four tilt nozzles 104 are each connected to a gas pump 150 to receive compressed gas. A tilt valve 134 is provided between the tilt nozzle 104 and the gas pump 150, respectively. The opening and closing of the tilt valve 134 controls the supply of compressed gas to each tilt nozzle 104.

1 and 2, the first spray transfer unit 200 includes a first spray lift unit 201. The first spray elevating unit 201 elevates the first nozzle 101 and the tilt nozzle 104 at the same time.

The first spray supply unit 102 is configured to supply a conductive solution to the first nozzle 101 in the form of a spray. The first spray supply unit 102 can be used in any configuration as long as it can supply a conductive solution in the form of a spray.

In this embodiment, a case in which the first spray supply unit 102 having the structure as shown in FIG. 3 is used will be described as an example.

Referring to FIG. 3, the first spray supply unit 102 includes a storage unit 110, an aerosol generating unit 121, a chamber 130, a supply pipe 133, and a supply pump 131.

The storage unit 110 stores a conductive solution to be applied to the material. The conductive solution used in this embodiment is silver paste.

The aerosol generating unit 121 converts the conductive solution received from the storage unit 110 into an aerosol in a fine particle state. In the case of the present embodiment, as shown in FIG. 3, an aerosol generating unit 121 is installed inside the storage unit 110. This embodiment uses an aerosol generating unit 121 having an ultrasonic diaphragm. The ultrasonic diaphragm vibrates the conductive solution inside the storage unit 110 to atomize the conductive solution, thereby generating aerosols in the form of particles having a size of about several micrometers or smaller.

The aerosol generated by the aerosol generating unit 121 is delivered to the chamber 130 connected to the reservoir 110. The aerosol delivered from the reservoir 110 to the chamber 130 is stored in the chamber 130. The storage unit 110 and the chamber 130 are connected to the delivery pipe 113. The delivery pipe 113 is provided with a delivery valve 112 to open and close the delivery pipe 113 or to adjust the flow rate. The storage 110 is provided with a delivery pump 111 to adjust the pressure of the storage 110 so that the aerosol is delivered to the chamber 130.

The operation of the aerosol generating unit 121, the delivery pump 111 and the delivery valve 112 is controlled by a control unit provided separately.

The supply pipe 133 is connected to the chamber 130, and the first nozzle 101 is connected to the supply pipe 133. That is, the supply pipe 133 connects the chamber 130 and the first nozzle 101. The aerosol stored in the chamber 130 is delivered to the first nozzle 101 through the supply pipe 133 is injected. When the direction of the aerosol injected from the first nozzle 101 is inclined (if changed) by the compressed gas injected from the tilt nozzle 104, the conductive solution may be applied to the side surface of the semiconductor package C.

The chamber 130 is provided with a feed pump 131 to adjust the pressure of the chamber 130. The supply pipe 133 is provided with a supply valve 132 to open and close the supply pipe 133. The supply pipe 133 operates the supply pump 131 and the supply valve 132. The controller may control the amount of aerosol injected through the first nozzle 101 by applying pressure to the chamber 130 by the supply pump 131 and adjusting the operation of the supply valve 132.

The circulation tube 140 is installed between the chamber 130 and the storage 110. The aerosol stored in the chamber 130 may be delivered to the aerosol generating unit 121 through the circulation pipe 140. The circulation pipe 140 is provided with a circulation valve 141. The operation of the circulation valve 141 is controlled by the control unit. According to the pressure of the chamber 130 increased by the supply pump 131 and the opening / closing operation of the circulation valve 141 and the supply valve 132, the aerosol stored in the chamber 130 is stored in the storage unit through the circulation pipe 140. And may be circulated. The aerosol generated by the aerosol generating unit 121 and not injected into the first nozzle 101 in the aerosol delivered to the chamber 130 is transferred to the storage 110 through the circulation pipe 140 and reused.

The first nozzle 101 of the first spray module 100 having the structure as described above is transferred by the first spray transfer unit 200. The first spray module 100 simultaneously moves the first nozzle 101 and the four tilt nozzles 104 back and forth, right and left, and the first nozzle 101 and the four tilt nozzles by the first spray lift unit 201. Elevate 104.

Referring to FIG. 1, the second spray module 300 includes a second nozzle 301 and a second spray supply unit 302.

The second nozzle 301 is formed toward the upper surface of the semiconductor package C to spray the conductive solution on the upper surface of the semiconductor package C. The second spray supply unit 302 supplies the conductive solution to the second nozzle 301 in the form of a spray. The second spray supply unit 302 may be configured in the same structure as the first spray supply unit 102 described above, or may be formed in a general spray injection device structure.

The second spray transfer unit 400 transfers the second nozzle 301 of the second spray module 300 with respect to the semiconductor package C. The second spray transfer unit 400 transfers the second spray module 300 to front, rear, left and right so as to apply a conductive solution to the upper surfaces of the plurality of semiconductor packages C arranged in the tray T. If necessary, it is also possible to configure the second spray transfer unit 400 so that the second nozzle 301 can be raised and lowered.

1 and 2, the material transfer unit 500 may include the semiconductor packages C arranged at regular intervals in the tray T in the first spray module 100 and the second spray module 300, as shown in FIGS. 1 and 2. To convey. In the present exemplary embodiment, the material transfer unit 500 first arranges the semiconductor packages C under the first spray module 100 to perform a work, and then moves the semiconductor packages C to the second spray module ( 300) to the lower side.

Hereinafter, a process of performing the electromagnetic wave shielding film forming method of the semiconductor package according to the present invention using the electromagnetic wave shielding film forming apparatus of the semiconductor package configured as described above will be described.

First, the step of spraying a conductive solution on the side surface of the semiconductor package (C) using the first spray module 100 (step (a)).

Step (a) is specifically carried out through the following process.

The first nozzle 101 and the tilt nozzle 104 are lowered by the first spray transfer unit 200 to approach the side surface of the semiconductor package C (step (a-1)).

In this state, by operating the first spray supply unit 102 to spray the conductive solution through the first nozzle 101 to spray the gas to the tilt nozzle 104 to the spray direction of the conductive solution of the semiconductor package (C) Change in the lateral direction (step (a-2)). By opening one of the tilt valves 134 and injecting gas through the tilt nozzle 104, the spray injection direction of the first nozzle 101 is changed in the lateral direction of the semiconductor package C.

While spraying the conductive solution through the first nozzle 101, the first spray transfer unit 200 is operated to transfer the first nozzle 101 and the tilt nozzle 104 along the side surface of the semiconductor package C. (Step (a-3)). 1 and 3, the first spray transfer unit 200 transfers the first nozzle 101 along the Y direction, and the left surfaces of the semiconductor packages C disposed in the same row are all coated with the conductive solution. Be sure to When the application of the left side to the row of semiconductor packages C is completed, the first nozzle 101 is pitch-shifted by one space in the X direction to spray-spray the conductive solution on the left side of the next row of the semiconductor packages C. FIG.

Next, the tilt valve 134 of the tilt nozzle 104 disposed to face the Y direction is opened to repeat the above steps (a-1) to (a-3). In this manner, the conductive solution applying operation to the entire surface of the semiconductor packages C disposed on the tray T is completed. In the same manner, the conductive solution is applied to the rear and right sides of the semiconductor packages C. FIG.

When the operation of applying the conductive solution to each side of all the semiconductor packages C disposed on the tray T is completed, the first spray transfer unit 200 is operated to move the tilt nozzle 101 to the semiconductor package C. Raise relative to the side of ((a-4) step).

Through the above process, step (a) of applying the conductive solution to the sides of the semiconductor chips is completed.

As such, when the step (a) is completed, the plurality of semiconductor packages C mounted on the tray T may be operated by operating the material transfer unit 500, and the second spray module may be disposed below the first spray module 100. To the lower side of step 300 (step (c)).

When the semiconductor packages C mounted on the tray T are disposed below the second spray module 300, the conductive solution may be formed on the upper surface of the semiconductor package C using the second spray module 300. Spray (step (b)). By operating the second spray module 300 while moving the second spray module 300 back, front, left, and right using the second spray transfer unit 400, the upper surface of all the semiconductor packages C disposed on the tray T may be operated. The conductive solution is applied. If necessary, the second nozzle 301 is lowered by the second spray transfer unit 400 so that the second nozzles 301 are close to the upper surfaces of the semiconductor packages C. It is also possible to perform a conductive solution coating on the upper surface. In this case, when the coating operation is completed, the second nozzle 301 is raised to the second spray transfer unit 400 again.

As described above, the application of the conductive solution to the "side" of the semiconductor package C and the application of the "upper surface" are separately performed to separate the thickness of the conductive solution applied to the side of the semiconductor package C. There is an advantage that can be made uniform. In particular, when the tilt nozzle 104 formed to be inclined toward the side surface of the semiconductor package C is used, the electromagnetic wave shielding film forming apparatus of the semiconductor package can be manufactured at a low cost by relatively simple configuration of the whole equipment. In addition, there is an advantage that the electromagnetic shielding film can be formed on the outer surface (particularly, side surface) of the semiconductor package C with high quality. In addition, since the first nozzle 101 and the tilt nozzle 104 having the above-described structure are used, the conductive solution can be uniformly and precisely applied to the side surface of the semiconductor package C having a very thin thickness. .

In particular, in the case of the present invention, unlike the conventional solution coating method of the conventional method by separately spray spraying on the side and the upper surface of the semiconductor package (C), the solution applied by the surface tension of the solution applied to the semiconductor package (C) There is an advantage that can prevent the occurrence of a problem that the thickness of the non-uniform. In particular, it is possible to control the application amount of the conductive solution very precisely and to minimize the effect of the surface tension of the solution, unlike the conventional method, because it uses a large number of conductive solution fine particles spray sprayed.

Through the above-described process, the semiconductor packages C having conductive solutions coated on the top and side surfaces thereof are transferred to the oven, and the conductive solutions applied to the semiconductor packages C are cured by the heat of the oven.

Hereinafter, a process of performing the step (a-2) of spraying the conductive solution on the side of the semiconductor chip by using the first spray module 100 having the same structure as described with reference to FIG. 3 will be described in more detail. .

First, the conductive solution to be sprayed in the form of an aerosol is stored in the storage 110 (step (a-2-1)). As described above, the silver paste solution may be stored in the storage 110.

Next, the conductive solution stored in the storage unit 110 is converted into an aerosol in a fine particle state using the aerosol generating unit 121 (step (a-2-2)). In this embodiment, the aerosol is generated by applying vibration to the conductive solution by using the ultrasonic diaphragm installed in the storage 110 as described above. It is possible to generate various aerosols by adjusting the frequency of the diaphragm according to the kind of the conductive solution. Since the size of the particles of the aerosol can be made smaller than several micrometers depending on the method of producing the aerosol, it is possible to finely control the application capacity of the conductive solution and to apply the conductive solution in the form of extremely thin lines.

The aerosol generated by the aerosol generating unit 121 is delivered to the chamber 130 (step (a-2-3)). The aerosol stored in the chamber 130 is injected through the first nozzle 101 (step (a-2-4)). Some of the aerosols stored in the chamber 130 is delivered to the aerosol generating unit 121 of the storage unit 110 through the circulation tube 140 to circulate (step (a-2-5)).

The control unit operates the aerosol generating unit 121, the supply pump 131, the supply valve 132, and the circulation valve 141 to store the amount of aerosol injected through the first nozzle 101 and the circulation pipe 140. The amount of aerosol delivered to the unit 110 is adjusted. It is also possible to adjust the concentration of the aerosol to be injected through the first nozzle 101 by allowing the outside air to enter the chamber 130 through the supply pump 131.

As mentioned above, although the preferable example was demonstrated about the electromagnetic wave shielding film formation apparatus of the semiconductor package of this invention, and the electromagnetic wave shielding film formation method of a semiconductor package, the scope of the present invention is not limited to the form demonstrated and shown above.

For example, although the electromagnetic wave shielding film forming apparatus of the semiconductor package including the circulation tube 140 has been described as an example, it is also possible to configure an embodiment without the circulation tube 140 in some cases. When there is no circulation tube 140, all of the aerosol inside the chamber is not circulated or discharged to the outside. In this case, the electromagnetic wave shielding film forming method of the semiconductor package does not perform the step (a-2-5) of circulating the aerosol of the chamber.

In addition, the step (a) of applying a conductive solution to the side of the semiconductor package (C) in the first step and the step (c) transfers the semiconductor package (C) to the lower side of the second spray module 300 and then the semiconductor package Although the step (b) of applying the conductive solution to the upper surface of (C) has been described, the electromagnetic wave shielding film forming method of the semiconductor package can be performed in the reverse order. In other words, the conductive solution may be first applied to the upper surface of the semiconductor package C and the conductive solution may be applied to the side surface of the semiconductor package C later.

In addition, the first spray supply unit 102 has been described as an example of the case provided with a delivery pump 111, a supply pump 131, a delivery valve 112, a supply valve 132 and a circulation valve 141 as an example. According to some embodiments, only some of these components may be provided, and additionally, a configuration including separate valves and pumps may be possible. For example, even when there is no delivery pump 111, the aerosol can be naturally delivered to the chamber by the pressure generated by the aerosol in the reservoir.

In addition, the aerosol-generating unit 121 in the first spray supply unit 102 of the electromagnetic wave shielding film forming apparatus of the semiconductor package described with reference to FIG. 3 has been described as being installed in the storage unit 110. It is also possible to install an aerosol generating unit in between. That is, the aerosol-generating unit may receive the solution stored in the reservoir to generate an aerosol, and configure the aerosol to be delivered to the chamber. The first spray supply unit may use various other configurations as long as it is not necessarily in the form of an aerosol and can generate a conductive solution in a spray state.

For example, it is also possible to configure the 1st spray supply part 103 of the structure as shown in FIG. The first spray supply unit 103 of the embodiment illustrated in FIG. 4 has the same configuration except for the configuration of the aerosol generating unit 160 and the embodiment described with reference to FIG. 3. For the sake of convenience, the rest of the configuration except for the aerosol generating unit 160 will be described with reference to the same member numbers as in FIG. 3.

The first spray supply unit 103 shown in FIG. 4 includes an aerosol generating unit 160 in a general spray form. The aerosol generating unit 160 includes a spray tube 163 and a spray nozzle 162. The spray tube 163 is installed in the reservoir 110 to supply the solution stored in the reservoir 110. The spray nozzle 162 is connected to the spray tube 163. The spray nozzle 162 is connected to the spray pump 161 to supply air pressure. When high pressure air is supplied by the spray pump 161, the solution is sprayed in the form of an aerosol while the air and the solution supplied through the spray tube 163 are mixed. Operation of the spray pump 161 is controlled by the control unit.

When the first spray supply unit 103 having the structure shown in FIG. 4 is used, the electromagnetic wave shielding film forming method of the semiconductor package according to another embodiment of the present invention is supplied through the spray tube 163 without using the aforementioned diaphragm. The prepared solution is mixed with the compressed air through the spray nozzle 163 to perform the step (a-2-2) by using the aerosol generating unit 121 for generating an aerosol.

In addition, the electromagnetic wave shielding film forming apparatus of the semiconductor package described above with reference to FIGS. 1 and 2 has been described as having four tilt nozzles 104 arranged in different directions, but the number of the tilt nozzles is according to an embodiment. Can vary. In some cases, it is also possible to configure the first spray module and the first spray conveying unit having only one tilt nozzle and configured to rotate the tilt nozzle about an up-down center axis. In this case, step (a) may be performed while rotating the tilt nozzle in the lateral direction of the semiconductor package C to be coated with the conductive solution.

In this case, in the method for forming an electromagnetic wave shielding film of the semiconductor package of the above-described embodiment, steps (a-1) to (a-4) and (a-2-1) to (a-2-5) are different from each other. It can be changed in a way.

Claims (10)

In the electromagnetic wave shielding film forming apparatus of the semiconductor package for coating a conductive solution to form an electromagnetic wave shielding film on the outer surface of the semiconductor package, A gas in a direction inclined with respect to the vertical direction so that the spraying direction of the first nozzle disposed in the downward direction to spray the conductive solution and the conductive solution sprayed from the first nozzle is changed toward the side surface of the semiconductor package A first spray module having a tilt nozzle for spraying the spray and a first spray supply unit for supplying the conductive solution to the first nozzle in a spray form; A first spray transfer unit configured to transfer the first nozzle and the tilt nozzle of the first spray module to the semiconductor package; A second nozzle provided toward the upper surface of the semiconductor package to spray the conductive solution on the upper surface of the semiconductor package, and a second spray supply unit supplying the conductive solution in the form of a spray to the second nozzle; Spray module; A second spray transfer unit configured to transfer a second nozzle of the second spray module with respect to the semiconductor package; And And a material transfer unit transferring the semiconductor package with respect to the first spray module and the second spray module. The method of claim 1, Tilt nozzles of the first spray module are provided in plurality, and the plurality of tilt nozzles are disposed in different directions, respectively. And the first spray transfer unit includes a first spray lift unit for elevating the first nozzle and the plurality of tilt nozzles. The method of claim 1, The first spray supply unit of the first spray module, A storage unit in which the conductive solution is stored; An aerosol generating unit for converting the conductive solution received from the storage unit into an aerosol in a fine particle state; A chamber for receiving and storing the aerosol generated in the aerosol generating unit; A supply pipe connecting the chamber and the first nozzle, and And a supply pump configured to apply pressure to the aerosol delivered from the chamber to the first nozzle through the supply pipe. The method of claim 3, The aerosol-generating unit of the first spray supply unit includes an ultrasonic diaphragm for generating an aerosol by applying vibration to the conductive solution stored in the storage unit. The method of claim 3, The aerosol-generating unit includes a spray tube for supplying a conductive solution of the storage unit and a spray nozzle for injecting pneumatic pressure into the spray tube. The method of claim 3, The first spray supply unit, A circulation tube for delivering the aerosol stored in the chamber to the aerosol generating unit; Electromagnetic shielding film forming apparatus of a semiconductor package, characterized in that it further comprises a circulation valve for adjusting the flow rate of the circulation pipe. In the electromagnetic wave shielding film forming method of the semiconductor package is coated with a conductive solution to form an electromagnetic shielding film on the outer surface of the semiconductor package, (a) a first nozzle disposed in a downward direction, a tilt nozzle formed in an inclined direction with respect to a vertical direction, and spraying gas, and a first spray supply unit supplying the conductive solution in a spray form to the first nozzle; Spraying the conductive solution on the side surface of the semiconductor package by using a first spray module; (b) an upper surface of the semiconductor package using a second spray module including a second nozzle formed toward the upper surface of the semiconductor package and a second spray supply unit supplying the conductive solution to the second nozzle in a spray form; Spraying the conductive solution; And (c) transferring the semiconductor package from the lower side of one of the first spray module and the second spray module to the lower side of the other one of the first spray module and the second spray module. The method of claim 7, wherein In step (a), (a-1) lowering the first nozzle and the tilt nozzle by a first spray transfer unit for transferring the first nozzle and the tilt nozzle to approach the side surface of the semiconductor package; (a-2) operating the first spray supply part to spray gas with the tilt nozzle while spraying the conductive solution with the first nozzle to change the spraying direction of the conductive solution to the side of the semiconductor package; Wow, (a-3) operating the first spray transfer unit to transfer the first nozzle and the tilt nozzle along the side surface of the semiconductor package; (a-4) operating the first spray transfer unit to raise the first nozzle and the tilt nozzle with respect to the side surface of the semiconductor package. The method of claim 7, wherein After performing step (a) first, After performing step (c) to transfer the semiconductor package from the lower side of the first spray module to the lower side of the second spray module, Method of forming an electromagnetic shielding film of a semiconductor package, characterized in that the step (b). The method of claim 8, Step (a-2), (a-2-1) storing the conductive solution in a storage unit, (a-2-2) converting the conductive solution stored in the reservoir into a fine particle aerosol using an aerosol generating unit; (a-2-3) delivering the aerosol generated in step (a-2-3) to the chamber, (a-2-4) spraying an aerosol stored in the chamber through the first nozzle, (a-2-5) transmitting the aerosol stored in the chamber to the aerosol-generating unit to circulate the electromagnetic wave shielding film.

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