[go: up one dir, main page]

WO2017020119A1 - Procédé de purification de saphir - Google Patents

Procédé de purification de saphir Download PDF

Info

Publication number
WO2017020119A1
WO2017020119A1 PCT/CA2016/050881 CA2016050881W WO2017020119A1 WO 2017020119 A1 WO2017020119 A1 WO 2017020119A1 CA 2016050881 W CA2016050881 W CA 2016050881W WO 2017020119 A1 WO2017020119 A1 WO 2017020119A1
Authority
WO
WIPO (PCT)
Prior art keywords
sapphire
sample
impurities
microwave
microwaves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CA2016/050881
Other languages
English (en)
Inventor
Christina F. Souza
Harry Ruda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PRISED SOLAR Inc
Original Assignee
PRISED SOLAR Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PRISED SOLAR Inc filed Critical PRISED SOLAR Inc
Publication of WO2017020119A1 publication Critical patent/WO2017020119A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Definitions

  • atomic layer deposition refers to a technique where films are deposited one atomic layer at each cycle allowing the control of growing layers with thicknesses of just a few nanometers.
  • the present method provides a method for purifying a sample of sapphire by irradiating the sample of sapphire with microwaves emitted by a microwave generating device inducing a migration of impurities within the sample of sapphire to a surface of the sample of sapphire and removing the impurities from the surface of the sample of sapphire.
  • a first embodiment concerns the effect of microwaves on copper metal ions migration in sapphire layers deposited on GaAs.
  • sapphire films are deposited on GaAs wafers by the ALD method as discussed above.
  • the samples were divided into smaller pieces to be submitted to microwave processing.
  • a thin copper layer was evaporated on top of the sapphire film forming a metal-insulator-semiconductor (MIS) structure that will be tested via C-V measurements.
  • the microwave processing comprises exposing samples to microwave radiation for controlled times in a microwave cavity.
  • the samples are characterized before and after microwave processing by C-V measurements across the MIS structure.
  • Another option is the use of a focusing mirror to concentrate the beam in a smaller region when surface heating is needed or small areas. Also, the possibility of having the microwave beam passing more than once through the sample in order to improve the absorption could be considered in the design. In addition, cavity walls with cooling systems would help avoid overheating.
  • the thickness of the insulator i.e., sapphire
  • the capacitor area and dielectric constants are invariant, the effective sapphire thickness can be calculated for different applied frequencies.
  • a calculation based on the variation of capacitance caused by the migration of copper ions gives a value of 15nm for the effective thickness of the dielectric film (sapphire) at a frequency of 10MHz. This result shows that Cu ions can migrate inside a sapphire layer under the influence of microwaves.
  • a copper layer was deposited on the surface of the sapphire layer to work as a contact and as a source of metallic ions. Based on the change in capacitance, the effective thickness was calculated corresponding to each processing time. In the figure, the results of these calculations are presented, showing the variation of the effective thickness as a function of the microwave exposure time, normalized to the effective thickness obtained under the lowest microwave exposure time. As the exposure time to microwaves increases, more Cu ions accumulate at the interface reducing the effective thickness of the dielectric layer (sapphire). In conclusion, Cu ions migrate through the sapphire film under the influence of microwaves. Above a certain threshold, the amount of ions that migrates is proportional to the microwaves exposure time.
  • a susceptor such as a silicon carbide plate is disposed beneath a sapphire sample for processing.
  • the high microwave absorption of silicon carbide results in a significant fraction of microwave power being absorbed by the susceptor which consequently heats up.
  • heat is transferred to the sapphire samples by both conduction and radiation.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un procédé pour purifier du saphir, qui consiste à irradier un échantillon de saphir par un rayonnement de micro-ondes d'une énergie dans une plage d'environ 0,3 kW à environ 300 kW, à une fréquence dans une plage d'environ 300 MHz à 600 GHz pendant une durée sélectionnée pour provoquer une migration, induite thermiquement et par un champ par les micro-ondes, d'impuretés vers une ou plusieurs interfaces internes au niveau de laquelle/desquelles les impuretés sont piégées et neutralisées et/ou vers une ou plusieurs surfaces extérieures. Les impuretés situées sur ladite une ou lesdites plusieurs surfaces externes sont éliminées.
PCT/CA2016/050881 2015-08-06 2016-07-28 Procédé de purification de saphir Ceased WO2017020119A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562201728P 2015-08-06 2015-08-06
US62/201,728 2015-08-06

Publications (1)

Publication Number Publication Date
WO2017020119A1 true WO2017020119A1 (fr) 2017-02-09

Family

ID=57942133

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2016/050881 Ceased WO2017020119A1 (fr) 2015-08-06 2016-07-28 Procédé de purification de saphir

Country Status (1)

Country Link
WO (1) WO2017020119A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3529347A (en) * 1967-03-29 1970-09-22 Marconi Co Ltd Semiconductor devices
US20020073922A1 (en) * 1996-11-13 2002-06-20 Jonathan Frankel Chamber liner for high temperature processing chamber
WO2014094168A1 (fr) * 2012-12-21 2014-06-26 The Governing Council Of The University Of Toronto Procédé de purification de silicium métallurgique

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3529347A (en) * 1967-03-29 1970-09-22 Marconi Co Ltd Semiconductor devices
US20020073922A1 (en) * 1996-11-13 2002-06-20 Jonathan Frankel Chamber liner for high temperature processing chamber
WO2014094168A1 (fr) * 2012-12-21 2014-06-26 The Governing Council Of The University Of Toronto Procédé de purification de silicium métallurgique

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JANNEY, M.A. ET AL.: "Enhanced diffusion in sapphire during microwave heating", JOURNAL OF MATERIALS SCIENCE, vol. 32, no. 5, March 1997 (1997-03-01), pages 1347 - 1355, XP000685998 *

Similar Documents

Publication Publication Date Title
Fu et al. Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates
CN104795322B (zh) 微波辐射退火的系统和方法
Patrick et al. Application of a high density inductively coupled plasma reactor to polysilicon etching
Guo et al. Effects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass
JPWO2020217266A1 (ja) プラズマ処理方法およびプラズマ処理装置
Nakakubo et al. Characterization of plasma process-induced latent defects in surface and interface layer of Si substrate
Hiller et al. A low thermal impact annealing process for SiO2-embedded Si nanocrystals with optimized interface quality
CN111436219A (zh) 等离子处理装置以及利用其的被处理样品的处理方法
US9252011B2 (en) Method for forming a layer on a substrate at low temperatures
Iwai et al. Influence of microwave annealing on optical and electrical properties of plasma-induced defect structures in Si substrate
WO2017020119A1 (fr) Procédé de purification de saphir
CN101151711A (zh) 等离子体掺杂方法和设备
Buzi et al. Utilizing photosensitive polymers to evaluate UV radiation exposures in different plasma chamber configurations
Buiu et al. Structural analysis of silicon dioxide and silicon oxynitride films produced using an oxygen plasma
Singh et al. Effects of heavy-ion irradiation on the electrical properties of rf-sputtered HfO2 thin films for advanced CMOS devices
Zheng et al. Effect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics
Ray et al. Optimization of a plasma immersion ion implantation process for shallow junctions in silicon
Thompson et al. Millisecond microwave annealing: Driving microelectronics nano
Narushima et al. Electron-stimulated surface stress relaxation of Si
US20180068848A1 (en) Low dielectric constant (low-k) dielectric and method of forming the same
Bao et al. Mechanistic study of plasma damage and CH4 recovery of low k dielectric surface
Zheng et al. Nonthermal combined ultraviolet and vacuum-ultraviolet curing process for organosilicate dielectrics
Ishikawa et al. UV photon-induced defect and its control in plasma etching processes
Luo et al. Effect of pulsed UV laser irradiation on 4H-SiC MOS with thermal gate oxide
US8698106B2 (en) Apparatus for detecting film delamination and a method thereof

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16832006

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16832006

Country of ref document: EP

Kind code of ref document: A1