WO2017010754A1 - Resin composition for semiconductor adhesion and dicing die bonding film - Google Patents

Abstract

The present invention relates to a resin composition for semiconductor adhesion, the composition containing: a thermoplastic resin having a low absorption rate; an epoxy resin including a biphenyl-based epoxy resin having a softening point of 50-100°C; and a curing agent including a novolac-based phenol resin, the composition satisfying level 1 on the IPC/JEDEC moisture sensitivity test, to a dicing die bonding film comprising an adhesion layer comprising the resin composition for semiconductor adhesion, and to a dicing method for a semiconductor wafer using the dicing die bonding film.

Description

 【Specification】

 [Name of invention]

 Resin composition for semiconductor bonding and dicing die bonding film

 [Technical Field] Cross Citation with Related Application (s)

 This application claims the benefit of priority based on Korean Patent Application No. 10-2015-0098420 dated July 10, 2015 and Korean Patent Application No. 10-2016-0086638 dated July 8, 2016. All content disclosed in the literature is included as part of this specification. The present invention relates to a resin composition for semiconductor bonding and a dicing die-bonding film, and more particularly, has excellent mechanical properties such as high mechanical properties, heat resistance, and layer resistance, and has high adhesion, and a peeling phenomenon or ripple of a dicing die-bonding film. It relates to a resin composition for semiconductor bonding and a dicing die-bonding film which can prevent row cracking and the like.

 [Technique to become background of invention]

 Recently, as the trend of miniaturization, high functionality, and large capacity of electronic devices has been expanded, and the necessity for high density and high integration of semiconductor packages has been rapidly increased, the size of semiconductor chips is gradually increasing, and stack packages for stacking chips in multiple stages in order to improve the degree of integration. The method is increasing gradually. In the recent development of semiconductor package development, the miniaturization and high performance of the above-described semiconductor chips are rapidly progressing, and the thickness of the semiconductor wafers is all reduced to 100 or less so that more chips can be stacked in the same package for the purpose of increasing the package capacity. In recent years, the thickness of all semiconductor wafers has become even thinner to 20 or less. As described above, in manufacturing a package having a thickness of 20 m or less, a semiconductor chip and an interlayer adhesive film are also required to be thinner.

Meanwhile, in the process of mounting the semiconductor package, a step of heating to a high temperature is applied. For example, a method of heating and mounting the entire package by infrared refluorination, vapor phase reflow, solder dim, or the like is used. In such a high temperature heating step, the entire semiconductor package is exposed to a temperature of 200 ^° C. or more, and therefore, moisture present in the semiconductor package may explode and vaporize, thereby causing package cracking or reflow cracking. In particular, when a large amount of moisture is contained in an adhesive such as a dicing die-bonding film, the moisture is vaporized by heating at the time of reflow mounting, and the die-die die-bonding film is destroyed or peeled off due to the vapor pressure generated. And reflow cracking may occur.

 Most of the defects in the semiconductor packaging process are caused by the phenomenon of deaminat ion between the substrate and the adhesive during the reflow process after moisture absorption. Thus, the stress between the substrate, the adhesive, and the semiconductor chip is improved or the moisture resistance is improved. There is a study on the situation.

 Prior Art Documents

 [Patent literature]

 (Patent Document 1) Korean Patent Publication No. 2013— 0016123

 (Patent Document 2) Korean Registered Patent No. 0889101

 [Content of invention]

 [Achievement to solve]

 The present invention is to provide a resin composition for semiconductor bonding that has excellent mechanical properties such as high mechanical properties, heat resistance and layer resistance, and high adhesion, and can prevent peeling phenomenon, reflow cracking, etc. of the film per dicing diebone. ..

 In addition, the present invention is a dicing that has excellent mechanical properties such as high mechanical properties, heat resistance and layer resistance, and high adhesion, and can prevent peeling or reflow cracking between a substrate, a semiconductor wafer, and / or a dicing die-bonding bridge. It is about die-bonding film.

 In addition, the present invention is to provide a dicing method of a semiconductor wafer using the dicing die bonding film.

■ [measures of problem]

In this specification, when exposed to 168 hours at 85 ^° C and 85% RH conditions Thermoplastic resin having a moisture absorptivity of 1.7% by weight or less; Epoxy resins including biphenyl-based epoxy resins having a softening point of 50 ^° C. to 100 ^° C .; And a curing agent including a novolak-based phenol resin; and a resin composition for semiconductor bonding, which satisfies IPC / JEDEC moisture sensitivity test level 1, is provided.

 The IPC / JEDEC moisture sensitivity test level 1 is an IR Re flow device.

Highest after 168 hours exposure of specimens weighing 50 隱 (horizontal) X 50 醒 (length) and weighing 2 grams at 85 ^° C and relative humidity of 85ffiH using IPC / JEDEC J-STD-020D It is defined as a state in which no bubbles or bursting bubbles appear on the surface of the specimen measured by passing three times through an IR reflow apparatus of 260 ^° C.

 The content of the biphenyl-based epoxy resin in the solid content of the resin composition for semiconductor bonding may be 5% by weight or more. Solid content of the resin composition for semiconductor bonding means a solid component except for water or other solvents that may be selectively included in the resin composition.

More specifically, the weight ratio of the biphenyl-based epoxy resin having a softening point of 50 ^° C to 100 ^° C to the total weight of the thermoplastic resin, epoxy resin and the curing agent in the semiconductor adhesive resin composition is 5% by weight or more, or 6 Weight% to 30 weight%, or 7 weight% to 20 weight ¾.

 The biphenyl epoxy resin may include a biphenyl novolac epoxy resin.

 The biphenyl epoxy resin having a softening point of 50 ° c to ltxrc

It may have an average epoxy equivalent of 200 to 400 g / eq or 220 to 300 g / eq.

The epoxy resin is a bisphenol having a softening point of 50 ^° C to 100 ^° C together with the biphenyl-based epoxy resin having a softening point of 50 ^° C to a cresol novolak type epoxy resin and 50 ^° C to about 100 ^° having a softening point of 10CTC C It may further comprise at least one epoxy resin selected from the group consisting of A epoxy resin.

At this time, the epoxy resin has a softening point of 50 ^° C to 100 ^° C compared to a biphenyl-based epoxy resin having a softening point of 50 ^° c to Kxrc One or more epoxy resins selected from the group consisting of cresol novolac type epoxy resins and 5 (bisphenol A epoxy resins having a softening point of rc to ioo ° c) may be included in a weight ratio of 0.25 to 1.25, or 0.3 to 1.1. The epoxy resin may have an average epoxy equivalent of 100 to 1,000. The average epoxy equivalent may be obtained based on the weight ratio and epoxy equivalent of each epoxy resin included in the epoxy resin.

The novolac-based phenol resin may have a softening point of 60 ^° C or more. The novolac phenolic resin may have a hydroxyl equivalent of 80 g / eq to 300 g / eq and a softening point of 60 ^° C. to 150 ^° C., or 105 ^° C. to 150 ^° C., or 70 to 120 ^° C.

 The novolak-based phenol resin may include at least one selected from the group consisting of a novolak phenol resin, a xylox novolak phenol resin, a cresol novolak phenol resin, a biphenyl novolak phenol resin, and a bisphenol A novolak phenol resin. have. More specifically, the novolak-based phenol resin may include at least one selected from the group consisting of a novolak phenol resin, a xylox novolak phenol resin, and a bisphenol A novolak phenol resin.

 The thermoplastic resin is polyimide, polyether imide, polyester imide, polyamide, polyether sulfone, polyether ketone, polyolefin, polyvinyl chloride, phenoxy, reactive butadiene acrylonitrile copolymer rubber and (meth) acrylate It may include one or more polymer resins selected from the group consisting of resins.

The (meth) acrylate-based resin may be a (meth) acrylate-based resin containing a (meth) acrylate-based repeating unit including an epoxy-based functional group and having a silver degree of −10 ^° C. to 25 ^° C.

 The (meth) acrylate-based resin may include 0.1 wt% to 10 wt%> of (meth) acrylate-based repeating units including an epoxy-based functional group.

The semiconductor adhesive resin composition is 50 to 1, 500 parts by weight of the thermoplastic resin and 30 to the curing agent relative to 100 parts by weight of the epoxy resin. It may comprise 700 parts by weight.

 The curing agent may further include one or more compounds selected from the group consisting of amine curing agents, other phenol curing agents, and acid anhydride curing agents. The said other phenolic hardening | curing agent means the hardening | curing agent of phenolic compounds other than a novolak-type phenol resin.

 The resin composition for semiconductor bonding may further include at least one curing catalyst selected from the group consisting of phosphorus compounds, boron compounds, indium boron compounds, and imidazole compounds.

 The semiconductor adhesive resin composition may further include at least one additive selected from the group consisting of a coupling agent and an inorganic filler.

 The semiconductor adhesive resin composition may further include 10 to 90 weight ¾ »of an organic solvent. In this case, the content of the biphenyl epoxy resin in the solid content of the resin composition for semiconductor bonding may be 5% by weight to 25% by weight.

 In addition, in this specification, a base film; An adhesive layer formed on the base film; And an adhesive layer formed on the adhesive layer and including the resin composition for semiconductor bonding.

 The dicing diebonding film may meet the IPC / JEDEC moisture sensitivity test level 1.

 The IPC / JEDEC Moisture Sensitivity Test Level 1 is 50 kW (horizontal) X 50 kV at 85 ° C and 85% RH relative humidity using the IR Ref ow IPC / JEDEC J-STD-020D. After 168 hours of exposure of a specimen having a height of 2 cm and a weight of 2 g, the sample was subjected to three passes through an IR reflow apparatus having a maximum temperature of 26 CTC. It is defined as a state.

 The pressure-sensitive adhesive layer may include an ultraviolet acid curable pressure sensitive adhesive or a heat curable pressure sensitive adhesive.

The base film has a thickness of 10 to 200, the adhesive layer has a thickness of 10 jm to 500, the adhesive film of 1 to 50 kPa Has a thickness.

 In addition, in the present specification, the dicing die bonding film; And a wafer stacked on at least one surface of the dicing die-bonding film; a pre-processing step of partially or partially dividing the semiconductor wafer. A method of dicing a semiconductor wafer is provided, comprising the step of irradiating ultraviolet rays to the base film of the pretreated semiconductor wafer and picking up individual chips separated by the division of the semiconductor wafer.

 【Effects of the Invention]

 According to the present invention, a resin composition for semiconductor bonding, which has high mechanical properties, heat resistance and impact resistance, excellent mechanical properties and high adhesion, and can prevent peeling or reflow cracking of a dicing die-bonding film, and high mechanical properties ， Dicing die-bonding film having excellent mechanical properties such as heat resistance and layer resistance and high adhesion, and preventing peeling phenomenon or reflow cracking of the dicing die-bonding film, and semiconductor having the die-die die-bonding film A dicing method of a wafer and a semiconductor wafer using the dicing die bonding film may be provided.

 [Specific contents to carry out invention]

 The resin composition for semiconductor bonding, the dicing die-bonding film, the semiconductor wafer, and the dicing method of a semiconductor wafer of the specific embodiment of this invention are demonstrated in detail.

According to one embodiment of the invention, the thermoplastic resin having a moisture absorption of 168 hours exposure at 85 ^° C and 85% RH conditions of 1.7% by weight or less; Epoxy resins including biphenyl-based epoxy resins having a cotton point of 50 ^° C. to 100 ^° C .; And a curing agent including a novolak-based phenol resin; and a resin composition for semiconductor bonding, which satisfies IPC / JEDEC moisture sensitivity test level 1, is provided.

The present inventors conducted a study to solve the problem that the dicing die-bonding film is broken or peeled off due to the vapor pressure during the reflow mounting, the reflow crack occurs, the biphenyl-based together with a thermoplastic resin having a low moisture absorption rate Epoxy Resins and Phenols Containing Epoxy Resins in Specific Contents When the ^' hardening agent including the resin ^' is mixed, it has excellent mechanical properties such as high mechanical properties, heat resistance and impact resistance, and has high adhesive strength and can prevent peeling phenomenon and reflow cracking of the dicing die-bonding film, etc. Experiments confirmed that it can provide and completed the invention.

 As the biphenyl-based epoxy resin is used together with the above-described low moisture absorption thermoplastic resin, the resin composition for semiconductor bonding of the embodiment may have a low moisture absorption even after long-term exposure to high temperature and high humidity conditions after a high temperature curing process. As a result, the peeling phenomenon between the substrate and the adhesive may be prevented after the reflow process of the semiconductor manufacturing process.

Specifically, the IPC / JEDEC moisture sensitivity test level 1 is 50 瞧 (horizontal) X 50 隱 at a temperature of 85 ^° C. and a relative humidity of 8¾RH using IPC / JEDEC J-STD-020D, an IR Ref low device. After 168 hours of exposure of a specimen weighing 2g and a weight of 2g, three passes through an IR reflow apparatus with a maximum temperature of 26C C. No bubbles or bursting of bubbles were observed. Can be defined as a state.

The content of the biphenyl-based epoxy resin in the solid content of the resin composition for semiconductor bonding may be 5% by weight or more. Solid content of the resin composition for semiconductor bonding means a solid component except for water or other solvents that may be optionally included in the resin composition. More specifically _. ， The weight ratio of the biphenyl-based epoxy resin having a softening point of 50 ^° C to 100 ^° C relative to the total weight of the thermoplastic resin, epoxy resin and the curing agent in the semiconductor adhesive resin composition is 5% by weight or more, or 6% by weight to 30 weight percent, or 7 weight percent to 20 weight percent.

As the biphenyl-based epoxy resin is included in a specific content, it controls the degree of curing and other physical properties while maintaining the low hygroscopic properties of the resin composition for semiconductor bonding of the embodiment and serves to relieve the strength of the final adhesive film Therefore, the phenomenon of de laminat ion between the substrate and the adhesive in the reflow process after the absorption in the semiconductor packaging process can be achieved. Can be prevented and the IPC / JEDEC moisture sensitivity test level 1 described above can be satisfied.

When the content of the biphenyl-based epoxy resin in the solid content of the resin composition for semiconductor bonding of the embodiment is less than 5% by weight, the role of lowering the moisture absorption rate of the resin composition for semiconductor bonding of the embodiment can not be reduced, the substrate and the adhesive film ^It may be difficult to prevent the liver from being peeled off or reflow cracks in a long time, and may be exposed to prolonged exposure to high temperature and high humidity conditions, for example, 168 hours of exposure at 85 ^° C. silver and 85% RH relative humidity. Afterwards, when passing through the high temperature IR reflow apparatus, bubbles may be generated on the outer surface or inside, or the generated bubbles may burst.

In addition, when the content of the biphenyl-based epoxy resin in the solid content of the resin composition for semiconductor bonding of the embodiment is excessive, the hardened structure is not dense, it is not possible to impart the layered heat resistance and strength to the final adhesive or adhesive layer, which is the substrate and It may cause low adhesion between substrate and adhesive film and cause reflow cracking, prolonged exposure to high temperature and high humidity conditions, for example, 168 hours at 85 ^° C and relative humidity of 85% RH. After exposure, when passing through a high-intensity IR reflow apparatus, when passing through a high-temperature IR reflow apparatus, bubbles may be generated on the outer surface or inside, or the bubbles may burst. .

The biphenyl epoxy resin may include ^: biphenyl novolac epoxy resin.

The softening point of the biphenyl-type epoxy resin may be a _i 50 ° C to 100 ° C. If the softening point of the epoxy resin is too low, the adhesive force of the semiconductor adhesive resin composition may be increased to reduce the chip pick-up property after dicing. If the softening point of the epoxy resin is too high, the fluidity of the resin composition for semiconductor bonding may be reduced. The adhesion of the adhesive film prepared from the resin composition for semiconductor bonding may be lowered.

The biphenyl-based epoxy resin having a softening point of 50 ^° C to 100 ^° C may have an average epoxy equivalent of 200 to 400 g / eq or 220 to 300 g / eq have.

As the biphenyl-based epoxy resin has an average epoxy equivalent in the above-described range, while maintaining the low moisture absorption characteristics of the resin composition for semiconductor bonding of the embodiment, the degree of curing and other physical properties and the stress of the final adhesive film It can play a role in mitigating. Accordingly cheungjok moisture absorption after the reflow process, the substrate and the ^adhesive, the peeling (del aminat ion) becomes to have more easily prevent the phenomenon, the semiconductor adhesive resin composition for IPC / JEDEC Moisture Sensitivity Test Level 1 between in the semiconductor packaging process It may be easier to:

The epoxy resin has a softening point of 5 (rc to ioo ° c softening point of having a biphenyl-based with an epoxy resin 50 ^° C to a cresol novolak type epoxy resin having a softening point of 100 ^° C and 50 ^° of the C to 100 ^° C It may further comprise at least one epoxy resin selected from the group consisting of bisphenol A epoxy resin, wherein the epoxy resin is 5 (50 ^° C to 100 ^° compared to biphenyl-based epoxy resin having a softening point of rc to locrc) A cresol novolac type epoxy resin having a softening point of C and at least one epoxy resin selected from the group consisting of bisphenol A epoxy resins having a softening point of from 50 ^° C. to 100 ^° C., having a weight ratio of 0.25 to 1.25, or 0.3 to 1.1. The epoxy resin may have an average epoxy equivalent of 100 to 1,000. The average epoxy equivalent is each included in the epoxy resin. The weight ratio of the epoxy resin and the epoxy equivalent weight can be determined on the basis of.

 Meanwhile, the biphenyl epoxy resin having a softening point of 5 (rc internal Kxrc) may have an average epoxy equivalent of 200 to 400 g / eq or 220 to 300 g / eq.

 ᅳ

 On the other hand, the resin composition for semiconductor bonding may comprise a novolak-based phenol resin as a curing agent. .

The novolac-based phenolic resin has a chemical structure in which a ring is located between semi-cyclic functional groups, and due to this structural characteristic, the semiconductor of the embodiment Hygroscopicity of the adhesive resin composition can be further lowered and stability can be further improved in a high-temperature m reflow process, thereby preventing the peeling phenomenon, reflow cracking, and the like of the dicing die-bonding film.

 In addition, as the resin composition for semiconductor bonding of the embodiment includes a novolak-based phenol resin, for example, when exposed to conditions of high temperature and high humidity for a long time, for example

After 168 hours of exposure at a temperature of 85 ^° C and a relative humidity of 85% RH, bubbles or bursting bubbles are generated on the outer surface or inside of the dicing die-bonding film when passing through a high-temperature IR reflow device. Can be prevented. Specific examples of the novolak-based phenol resins include at least one selected from the group consisting of a novolak phenol resin, a xylox novolak phenol resin, a cresol novoltax phenol resin, a biphenyl novolak phenol resin, and a bisphenol A novolak phenol resin. Can be mentioned. More specifically, the novolak-based phenol resin may include one or more selected from the group consisting of novolak phenol resin, xylox novolak phenol resin and bisphenol A novolak phenol resin.

The softening point of the novolac-based phenol resin may be 60 ^° C or more, or 60 ^° C to 150 ^° C, or 105 ^° C to 150 ^° C, or 70 ^° C to 120 ^° C.

As the softening point uses a novolak-based phenol resin having a temperature of 60 ^° C. or more, the semiconductor adhesive resin composition may have sufficient heat resistance, strength, and adhesiveness after curing. If the softening point of the novolak-based phenolic resin is too low, the semiconductor adhesive resin composition may not be able to obtain a cured product having sufficient strength after curing, and the adhesive force of the resin composition of the embodiment may be increased, so that the pickup property of the semiconductor chip after dicing is increased. This can be degraded. In addition, if the softening point of the novolak-based phenolic resin is too high, the fluidity of the resin composition for the semiconductor adhesive is lowered, voids are generated inside the adhesive in the actual semiconductor manufacturing process can greatly reduce the reliability and quality of the final product. .

^"The novolac type phenol resin can have a 80 g / eq to 300 g / eq in hydroxyl group equivalent weight and 60 ^° C to 150 ^° C softening point.

On the other hand, the resin composition for semiconductor bonding of the embodiment is a thermoplastic resin having a moisture absorption of 1.7% by weight or less at 168 hours exposure at 85 ^° C and 85% RH conditions. It may include. The moisture absorption rate can be obtained as a ratio of the weight before exposure at 168 hours at 85 ^° C. and 85% RH.

 According to the above-described epoxy resin and a curing agent together with a thermoplastic resin that satisfies the moisture absorption conditions as described above, the semiconductor adhesive resin composition of the embodiment may have a lower moisture absorption as a whole, the amount of moisture contained therein Insignificant, peeling phenomenon, reflow crack, etc. of a dicing die-bonding film can be prevented.

Examples of the thermoplastic resin are not limited, but for example, polyimide, polyether imide, polyester imide, polyamide, polyether sulfone, polyether ketone, polyolefin, polyvinyl chloride, phenoxy, reactive butadiene acryl Nitrile copolymer rubber, (meth) acrylate type resin, 2 or more types of these mixtures, or these 2 or more types of copolymers are mentioned. Specifically, the (meth) acrylate-based resin is a (meth) acrylate-based resin containing a (meth) acrylate-based repeating unit including an epoxy-based functional group and having a glass transition temperature of -10 ^° C to 25 ^° C Can be.

 The (meth) acrylate-based resin may include 0.1 wt% to 10 wt% of the (meth) acrylate-based repeating unit including an epoxy-based functional group.

To use a (meth) acrylate-based resin containing 0.1 to 10% by weight of the (meth) acrylate-based repeating unit including the epoxy-based functional group and having a glass transition temperature of -10 ^° C to 25 ^° C Therefore, the resin composition for semiconductor bonding of the embodiment can be used for bonding the semiconductor, bonding of the components contained in the semiconductor or for the semiconductor package, it is possible to ensure high impact resistance during the multi-stage stacking of ultrathin wafer An adhesive film for a semiconductor or an adhesive film for a semiconductor package capable of improving electrical characteristics may be provided.

 The epoxy functional group may be substituted with one or more repeating units forming the main chain of the (meth) acrylate resin.

The epoxy-based functional group may include an ehexi group or glycidyl group. Containing the epoxy functional (meth) (meth) acrylate-based resin containing an acrylate-based repeating unit is a glass transition temperature of -10 ^° C to 25 ^° C, or -5 ^° C, to 20 ^° _C. Can have By using the (meth) acrylate-based resin having the above-described glass transition temperature, the semiconductor adhesive resin composition may have sufficient fluidity, the final adhesive film can secure a high adhesive force, the resin for semiconductor bonding It is easy to manufacture in the form of a thin film using a composition.

 The resin composition for semiconductor bonding of the embodiment may include 50 to 1, 500 parts by weight of the thermoplastic resin and 30 to 700 parts by weight of the curing agent relative to 100 parts by weight of the epoxy resin.

 If the content of the plastic resin is too small compared to the epoxy resin-Modulus rises rapidly after curing of the resin composition, it is difficult to expect the effect of reducing the stress between the substrate and the wafer. In addition, when the content of the thermoplastic resin is too high compared to the epoxy resin, the viscosity of the composition is increased in the B-stage, resulting in poor adhesion to the substrate during the die attach process, and difficulty in removing voids during the curing process, thereby lowering the reliability of the process and the final product. Can be.

 If the content of the curing agent including the phenol resin is too small compared to the epoxy resin it may be difficult to secure sufficient heat resistance.

 If the content of the curing agent including the phenol resin is too high compared to the epoxy resin, even if the curing is completed, the unreacted phenol group may remain to increase hygroscopicity. Accordingly, the substrate and the adhesive may be used in the semiconductor packaging process and the reflow process after the absorption. It may cause peeling of the liver.

The content of the epoxy resin including the biphenyl-based epoxy resin in the semiconductor adhesive resin composition may be determined according to the final product, for example, 3 to 30% by weight of the solid content of the total composition, or 5 to ^■ 25 Weight%.

The curing agent may further include one or more compounds selected from the group consisting of amine curing agents, other phenol curing agents, and acid anhydride curing agents. The other phenolic curing agent of the phenolic compounds other than the novolac phenolic resin Means a curing agent.

 The amount of the curing agent may be appropriately selected in consideration of physical properties of the adhesive film to be finally produced, for example, 10 to 700 parts by weight, or 30 to 300 parts by weight based on 100 parts by weight of the epoxy resin.

 The semiconductor adhesive resin composition may further include a curing catalyst. The curing catalyst plays a role of promoting the action of the curing agent and curing of the resin composition for semiconductor bonding, and a curing catalyst known to be used in the manufacture of a semiconductor adhesive film or the like can be used without great limitation. For example, the curing catalyst may be one or more selected from the group consisting of phosphorus compounds, boron compounds and phosphorus-boron compounds and imidazole compounds. The amount of the curing catalyst may be appropriately selected in consideration of the physical properties of the final adhesive film, for example, 0.01 to 10% by weight based on a total of 100 parts by weight of the epoxy resin, (meth) acrylate resin and phenol resin Can be used as a wealth.

 The semiconductor adhesive resin composition may further include 10 to 90% by weight of an organic solvent. The content of the organic solvent may be determined in consideration of the physical properties of the resin composition for semiconductor bonding or the physical properties or manufacturing processes of the final adhesive film.

Meanwhile, the semiconductor adhesive resin composition may further include at least one additive selected from the group consisting of a coupling agent and an inorganic layer release agent. Specific examples of the coupling agent and the inorganic layering agent are not limited, and any component known to be used in an adhesive for semiconductor packaging may be used without great limitation. On the other hand, according to another embodiment of the invention, the base film; An adhesive layer formed on the base film; And an adhesive layer formed on the adhesive layer and including the above-described resin composition for semiconductor adhesion. As the adhesive layer includes the resin composition for semiconductor bonding of the above-described embodiment: The dicing die-bonding film may have excellent mechanical properties such as high mechanical properties, heat resistance, and layer resistance, and high adhesion, _ low moisture absorption rate. The peeling phenomenon, reflow crack, etc. of the dicing die-bonding film according to vaporization of vaporization of moisture can be prevented.

 Specifically, the dicing diebonding film may strat the IPC / JEDEC moisture sensitivity test level 1.

The IPC / JEDEC Moisture Sensitivity Test Level 1 is 50 誦 (width) Γ 50 隱 (vertical) at a temperature of 85 ^° C and a relative humidity of 85ffiH using the IP Ref low instrument IPC / JEDEC J-STD-020D. After 168 hours of exposure to a specimen weighing 2g in size, the sample was passed three times through an IR reflow apparatus with a maximum temperature of 260 ^° C, with no bubbles or bursting of bubbles on the surface of the specimen. Is defined.

 The volume content regarding the said resin composition for semiconductor bonding is as above-mentioned.

 On the other hand, the kind of base film included in the dicing die-bonding film is not particularly limited, for example, a plastic film or a metal foil known in the art can be used.

For example, the base film is low density polyethylene, linear polyethylene, high density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer of polypropylene, block copolymer of polypropylene, homopolypropylene, polymethylpentene, Ethylene-vinyl acetate copolymer, ethylene-methacrylic acid. Copolymers, ethylene-methyl methacrylate copolymers, ethylene-ionomer copolymers, ethylene-vinyl alcohol copolymers, polybutenes, styrene copolymers or two or more kinds thereof. The meaning of the base film including a mixture of two or more polymers in the above means that a film having a structure in which two or more layers of films including each of the aforementioned polymers are laminated or a single layer containing two or more of the aforementioned polymers includes both films. do. The thickness of the base film is not particularly limited, usually 10 to 200, preferably 50 kPa to 180 thick. When the thickness is less than 10, the cutting depth may become unstable in the dicing process. When the thickness exceeds 200, a large amount of burrs may be generated in the dicing process or the elongation may be reduced. There is a fear that the process may not be accurate.

 The base film may be subjected to conventional physical or chemical treatments, such as matt treatment, corona discharge treatment, primer treatment or crosslinking treatment.

 On the other hand, the pressure-sensitive adhesive layer may include an ultraviolet curable pressure sensitive adhesive or a heat curable pressure sensitive adhesive. In the case of using an ultraviolet curable pressure sensitive adhesive, ultraviolet rays are irradiated from the base film side to raise the cohesion force and the glass transition temperature of the pressure sensitive adhesive, and in the case of the heat curable pressure sensitive adhesive, the adhesive force is lowered by applying a temperature.

 In addition, the ultraviolet curable pressure sensitive adhesive may include a (meth) acrylate resin, an ultraviolet curable compound, a photoinitiator, and a crosslinking agent.

 In the above (meth) acrylate-based resin, the weight average molecular weight may be 100,000 to 1.5 million, preferably 200,000 to 1 million. If the weight average molecular weight is less than 100,000, the coating property or the coarsening force is lowered, there is a possibility that a residue remains on the adherend during peeling, or the adhesive breakdown phenomenon may occur. In addition, when the weight average molecular weight exceeds 1.5 million, the base resin interferes with reaction of the ultraviolet curable compound, and there is a concern that the peeling force may not be reduced efficiently.

 Such (meth) acrylate-based resins are, for example,

It may be a copolymer of a (meth) acrylic acid ester monomer and a crosslinkable functional group-containing monomer. At this time, examples of the (meth) acrylic acid ester monomer include alkyl (meth) acrylate, and more specifically, monomers having an alkyl group having 1 to 12 carbon atoms, pentyl (meth) acrylate, and n-butyl (meth). ) Acrylate, ethyl (meth) acrylate, methyl (meth) acrylate, nucleus (meth) acrylate, n-octyl (meth) acrylate, isooctyl (Meth) acrylate, 2-ethylnuclear chamber (meth) acrylate, dodecyl

One kind or a mixture of two or more kinds of (meth) acrylate or decyl (meth) acrylate is mentioned. Since the higher the carbon number of the alkyl monomer is used, the lower the glass transition temperature of the final copolymer, the appropriate monomer may be selected according to the desired glass transition temperature.

 In addition, examples of the crosslinkable functional group-containing monomer include one or more kinds of hydroxy group-containing monomers, carboxyl group-containing monomers, or nitrogen-containing monomers. Examples of the hydroxyl group-containing compound at this time include 2-hydroxyethyl (meth) acrylate or 2-hydroxypropyl.

(Meth) acrylate etc. are mentioned, As an example of a carboxyl group containing compound, (meth) acrylic acid etc. are mentioned, As an example of a nitrogen containing monomer, (meth) acrylonitrile, N-vinyl pyridone, or N Vinyl caprolactam and the like, but is not limited thereto.

 The (meth) acrylate resin may further include vinyl acetate, styrene or a low molecular weight compound containing acrylonitrile carbon-carbon double bond in view of other functionalities such as compatibility.

In addition, the type of the ultraviolet curable compound is not particularly limited, and for example, ^'a multifunctional compound having a weight average molecular weight of about 500 to 300, 000 (ex. Polyfunctional urethane acrylate, polyfunctional acrylate monomer or oligomer, etc.) ) Can be used. The average person skilled in the art can easily select the appropriate compound according to the intended use. The said weight average molecular weight is the weight average molecular weight of polystyrene conversion measured by GPC method. The content of the ultraviolet curable compound may be 5 parts by weight to 400 parts by weight, preferably 10 parts by weight to 200 parts by weight, based on 100 parts by weight of the base resin described above. If the content of the ultraviolet curable compound is less than 5 parts by weight, there is a risk that the drop in adhesive strength after curing is not sufficient, and the pick-up property may be degraded. If the content of the ultraviolet curable compound exceeds 400 parts by weight, the adhesive force of the adhesive before UV irradiation is insufficient, or with a release film or the like. There exists a possibility that peeling may not be performed easily.

The type of photoinitiator is also not particularly limited, and in this field It is possible to use a known general initiator, and the content thereof may be 0.05 part by weight to 20 parts by weight with respect to 100 parts by weight of the ultraviolet curable compound. If the content of the photoinitiator is less than 0.05 parts by weight, there is a risk that the curing reaction by the ultraviolet irradiation is insufficient, the pickup properties are lowered. If the content of the photoinitiator exceeds 20 parts by weight, the crosslinking reaction occurs in a short unit or the mabanung UV-curable compound It may generate and cause residue on the surface of the adherend, or the peeling force after curing may be too low, resulting in deterioration of pick-up performance.

 In addition, the type of crosslinking agent included in the adhesive portion for imparting adhesion and cohesion is not particularly limited, and conventional compounds such as an isocyanate compound, an aziridine compound, an epoxy compound, or a metal chelate compound may be used. The crosslinking agent may be included in an amount of 2 parts by weight to 40 parts by weight, preferably 2 parts by weight to 20 parts by weight, based on 100 parts by weight of the base resin. If the content is less than 2 parts by weight, the cohesive force of the pressure-sensitive adhesive may be insufficient, if it exceeds 20 parts by weight, the adhesive strength before ultraviolet irradiation is insufficient, there is a fear that chip scattering may occur.

 The adhesive layer may further include a tackifier such as a rosin resin, a terpene resin, a phenol resin, a styrene resin, an aliphatic petroleum resin, an aromatic petroleum resin, or an aliphatic aromatic copolymerized petroleum resin.

The method for forming the pressure-sensitive adhesive layer containing the above components on the base film is not particularly limited, and for example, a method of forming the pressure-sensitive adhesive layer by applying the pressure-sensitive adhesive composition of the present invention directly on the base film or on a peelable base material. The pressure-sensitive adhesive composition may be applied to a pressure-sensitive adhesive layer once to produce a pressure-sensitive adhesive layer, and the method may be used to transfer the pressure-sensitive adhesive layer onto a base film using the peelable base material. At this time, the method of applying and drying the pressure-sensitive adhesive composition is not particularly limited, and for example, a composition including each of the above components as it is, or diluted in a suitable organic solvent, such as a comma coater, gravure coater, die coater or river coater After application by means of, a method of drying the solvent for 10 seconds to 30 minutes at a temperature of 60 ^° C to 200 ^° C can be used. In addition, in the above process, to proceed with sufficient crosslinking reaction of the pressure-sensitive adhesive Aging processes may additionally be performed.

 The thickness of the adhesive layer is not particularly limited, but may be, for example, in the range of 10 to 500.

 On the other hand, as described above, the adhesive layer is formed on the adhesive layer and may include the adhesive film for a semiconductor of the embodiment described above. The content regarding the said adhesive film for semiconductors contains all the above-mentioned matters.

 The thickness of the adhesive layer is not particularly limited, but may be, for example, in the range of 1 to 100 1, or 3 im to 50.

 The dicing die-bonding film may further include a release film formed on the adhesive layer. Examples of release films that can be used are polyethylene terephthalate films,. And one or more plastic films such as polytetrafluoroethylene film, holethylene film, polypropylene film, polybutene film, polybutadiene film, vinyl chloride copolymer film or polyimide film.

 The surface of the release film as described above may be a release treatment of one or more kinds of alkylide, silicone, fluorine, unsaturated ester, polyolefin, or wax, or the like, of which alkyd, silicone or fluorine, etc. Release agent of is preferable.

 The release film may be generally formed in a thickness of about 10 to 500 μα, preferably about 20 to 200, but is not limited thereto.

 The method for producing the above-mentioned dicing die-bonding film is not particularly limited, and for example, a method of sequentially forming an adhesive part, an adhesive part, and a release film on a base film, or a dicing film (base film + adhesive part) ) And after the die-bonding film or the release film formed with the adhesive portion separately prepared, a method for laminating it may be used.

In the above, the lamination method is not particularly limited, hot lamination or lamination press method can be used, and the hot roll lamination method is preferable in view of the possibility of double continuous process and efficiency. Hot-laminate method is 0.1 Kgf / ciif to 10 at temperatures from 10 ^° C to 100 ^° C. Kgf / ciif may be carried out at a pressure, but is not limited thereto. On the other hand, according to another embodiment of the invention, the dicing die bonding film; And a wafer stacked on at least one surface of the dicing die-bonding film; a pre-processing step of partially or partially dividing the semiconductor wafer. Irradiating ultraviolet rays to the base film of the preprocessed semiconductor wafer, and picking up the individual chips separated by the division of the semiconductor wafer, there can be provided a die method of a semiconductor wafer.

 It includes all the above-mentioned content regarding the dicing die-bonding film.

 Except for the detailed steps of the dicing method, a device, a method, and the like, which are commonly used for the dicing method of a known semiconductor wafer, may be used without particular limitation.

 The dicing method of the semiconductor wafer may further include expanding the semiconductor wafer after the pretreatment step. In this case, a process of irradiating ultraviolet rays to the base film of the expanded semiconductor wafer and picking up individual chips separated by the division of the semiconductor wafer is followed.

 By using a dicing die-bonding film including the dicing film, it is possible to minimize the burr phenomenon that may occur during the dicing process of the semiconductor wafer to prevent contamination of the semiconductor chip and improve the reliability and life of the semiconductor chip. Can be. Specific embodiments of the invention are described in more detail in the following examples. However, the following examples are merely to illustrate specific embodiments of the invention, the content of the present invention is not limited by the following examples.

[Examples 1 to 5 and Comparative Examples 1 to 3: Preparation of a resin composition for semiconductor bonding and an adhesive film for semiconductor]

Example 1 (1) Preparation of Resin Composition Solution for Semiconductor Adhesion

As the epoxy resin, biphenyl novolac epoxy resin (NC-3000H, Nippon Chemical Co., Ltd., epoxy equivalent: 288 g / eq, softening point: 70 ^° C) 50 g, bisphenol A novolac epoxy resin (MF8080EK80, JSI, epoxy equivalent: 218 g / eq, softening point: 80 ^° C) 50 g, phenolic resin KPH-P3075 (Kotong emulsified hydroxyl equivalent: 175 g / eq, softening point 75 ^° C), thermoplastic acrylate resin KG-3015 (85 ^° C and 85% RH Hygroscopicity at exposure to 168 h under conditions: 1.5 wt) 450 g, curing accelerator 2-phenyl-4-methyl-5 'dihydroxymethyl imidazole (2P4MHZ, Shikoku-Case) 0.5 g, coupling agent gamma-glycidoxy 2 g of propyl trimethoxy silane (KBM-403, Senez Chemical) and 70 g of filler R-972 (Denka, spherical silica, average particle diameter: 17 nm) were dissolved in methyl ethyl ketone to give a solution of a resin composition for semiconductor bonding (20 wt% solids). Concentration).

 (2) Production of adhesive film for semiconductor

The resin composition solution for semiconductor bonding prepared above was applied onto a polyethylene terephthalate film (thickness 38), and then dried at 130 ^° C. for 3 minutes to obtain an adhesive film having a thickness of 20. Examples 2-6

 A semiconductor adhesive film was prepared in the same manner as in Example 1, except that a resin composition solution for a semiconductor adhesive (concentration of 20% by weight of methyl ethyl ketone) was prepared using the components and contents shown in Table 1 below. Comparative Examples 1 to 3

A semiconductor adhesive film was prepared in the same manner as in Example 1, except that a resin composition solution for a semiconductor adhesive (concentration of methyl ethyl ketone ^< 20 wt ^< ¾) was prepared using the ingredients and contents shown in Table 1 below.

수지 KPH-F3075 60 60 30 30 60 60 60TABLE 1 Composition of Resin Compositions of Examples and Comparative Examples [Unit: g

Resin KPH-F3075 60 60 30 30 60 60 60

SHN-1101 42 53 40 60

Epoxy EOCN-104S 50 50

 Resin NC-3000H 50 108 50 72 50 50 20 70 50

MF8080EK80 50 50 25 70 90 20 50 Acrylic KG-3015 450 450 450 450

 Suzy

 KG-3047 450 450

 KG-3050 450

KG-3060 ^■ 450

 KG 一 3079 450 450

 Curing 2P4MHZ 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Accelerator

Coupling KBM-403 2 2 2 2 2 2 _. Two two two two

Filler R-972 70 70 70 70 70 70 70 70 70 70

<Phenolic resin>

KPH-F2001: novolac phenolic resin (Kotong emulsification, hydroxyl equivalent: 106 g / eq, softening point 88 ^° C)

KPH-F3075: Xylloc novolac phenol: Resin (Kotong emulsification, hydroxyl equivalent: 175 g / eq, softening point 75 ^° C)

SHN-1101: bisphenol A novolac phenolic resin (Shin A T & C, hydroxyl equivalent: 115 g / eq, softening point: 110 ^° C)

 <Epoxy resin>

EOCN-104S: cresol novolac type epoxy resin (epoxy equivalent: 214 g / eq, softening point 92 ^° C)

NC-3000H: biphenyl novolac epoxy resin (epoxy equivalent 288 g / eq, softening point 70 ^° C)

MF8080E 80: bisphenol A epoxy resin (epoxy equivalent 218 g / eq, softening point 80 ^° C)

 <Acrylic resin>

KG-3015: acrylate-based resin (3% by weight of glycidylmethacrylic repeating unit, glass transition temperature: moisture absorption at exposure time of 168 hours at 10 ^° C, 85 ^° C and 85¾RH conditions: 1.5 wt%) KG-3047: Acrylate resin (Glycidyl metaacrylate based repeat unit 3 weight 3/4>, glass transition temperature: moisture absorption at 168 hours exposure at 30 ^° C, 85 ^° C and 85% RH conditions: 2.0 wt. %))

KG-3050: Acrylate resin (3 weight% of glycidal methacrylic repeating units, glass transition temperature: moisture absorption at exposure time of 168 hours at 5 ^° C, 85 ^° C and 85% RH conditions: 2.3 wt%) .

G-3060: Acrylate resin (2% by weight of glycidylmethacrylic repeating unit; glass transition temperature: moisture absorption at exposure time of 168 hours at 5 ^° C, 85 ^° C and 85% RH conditions: 1.0 wt% )

 KG-3079: Acrylate Resin (Glycidyl Methyl Acrylate Repeating Unit

10 wt%, glass transition temperature: moisture absorption at 168 hours exposure at 12 ^° C, 85 ^° C and 85% RH: 1.2 wt))

Experimental Example: Evaluation of Physical Properties of Adhesive Film for Semiconductors

 Experimental Example 1: IPC / JEDEC Moisture Sensitivity Test

 M for each of the adhesive films obtained in Examples and Comparative Examples,

168 hours exposure of 50 腿 (horizontal) X 50 隱 (length) and 2 g weight specimens at 85 ^° C temperature and 85% RH relative humidity with ref low equipment IPC / JEDEC J-STD-020D Afterwards, the adhesive film surface was observed by passing three times through an IR reflow apparatus having a maximum temperature of 260 ^° C. for IPC / JEDEC moisture sensitivity test.

 Specifically, the appearance of bubbles or bursting bubbles on the surface of the adhesive film was visually observed, and the occurrence of bubbles or bursting bubbles inside the film was measured and observed through Scanning Acoust ic Tomography (SAT). The IPC / JEDEC moisture sensitivity test was evaluated by checking the number of occurrences and the number of burst bubbles. Experimental Example 2: Die Shear Strength

(1) Production of dicing film A copolymer having a weight average molecular weight of 850, 000 by copolymerizing 75 g of 2-ethylnuclear acrylate, 10 g of 2-—ethylnuclear methacrylate, and 15 g of 2-hydroxyethyl acrylate under 300 g of ethyl acrylate solvent -15 ^° C) was obtained, and then 10 g of an acryl isocyanate compound as a photocurable material was added thereto to obtain a reaction product. Then, 10 g of polyfunctional isocyanate oligomers and lg interlocker TP0 were mixed as a photoinitiator here, and the ultraviolet curable adhesive composition was produced.

The ultraviolet curable pressure-sensitive adhesive composition was applied on a polyester film having a thickness of 38 μm after the release treatment so as to have a thickness of 10 μm after drying, and dried at 110 ^° C. for 3 minutes. The dried adhesive layer was laminated on a polyolefin film having a thickness of 100 to prepare a dicing film.

 (2) Production of dicing die bonding film

 An adhesive film having a multilayer structure for dicing die bonding was prepared by laminating the adhesive layer obtained in the above process and the adhesive films (25 cm in width and 25 cm in length) obtained in the examples and the comparative examples, respectively.

 (3) Die Share Strength Measurement

After cutting into a size of 5 匪 X 5 500 using a 500um thick wafer coated with a dioxide film, laminating at 60 ^° C with the prepared dicing die-bonding film, and removing the dicing film by irradiation with UV chips The cut was made leaving only the adhesive film of the size. The 5 匪 X 5 隱 top chip was placed on a 10 隱 X 10 匪 bottom chip, pressed onto the hot plate ^at 130 ^° C for 2 seconds with 2 kgf force, and cured at 125 ^° C for 1 hour. . After curing the test specimen prepared as described above at 175 ^° C for 2 hours using a DAGE 4000 DST Tester at 250 ^° C was measured the die share strength of the upper chip. Experimental Example 3: Measurement of moisture absorption of the adhesive film for semiconductors

In the Examples and Comparative clerical script temperature of each of the obtained adhesive film until a thickness of about 640卿under the conditions of 60 ^° C ^'overlapping to prepare a sample of a laminate and then, the respective side length 5cm cube and 175 ^° C For 2 hours Heat cured. The heat-cured specimen was exposed to 168 hours at 85 ^° C. and 85% RH, and the hygroscopicity was measured by measuring the weight before and after moisture absorption.

 [Moisture absorption 00]

 (Weight of specimen after moisture absorption-Weight of specimen before moisture absorption) * 100 I Weight of specimen before moisture absorption Experimental Example 4: Reliability Evaluation (Precon TEST)

A wafer of thickness 80 coated with a dioxide film was laminated at 6 crc conditions together with a dicing die-bonding film prepared by the method described in Experimental Example 2, and cut into 10 s * 10 s, irradiated with 300 m j using a UV irradiator. And stacked in four stages on the FR-4 substrate through a die attach process. Continuous curing at 125 ^° C. for 1 hour and at 175 ^° C. for 2 hours. After curing, the substrate was exposed to 48 hours at 85 ° C and 85% RH for 48 hours, and subjected to three IR ref low processes. The degree of peeling between the substrate and the adhesive was observed by visual inspection and scanning acoust ic tomography (SAT). .

Table 2 Results of Experimental Example

상기 표 2에 나타난 바와 같이, 실시예 1 내지 2에서 제조된 접착 필름은 85^°C 및 85 조건에서 168시간 노출하여도 흡습율이 1.50wt%이하가 되며， 고온 경화 및 흡습 후 리플로우 과정에서 기판과 접착제 간의 박리 현상이 발생하지 않는다는 점이 확인되었다. 이에 반해， 비교예 1의 접착 필름은 낮은 흡습율을 갖는 아크릴레이트계 수지를 포함함에도 불구하고 85^°C 및 85%RH 조건에서 168시간 노출 이후에 흡습율이 1.75 wt%이고， 고은 경화 및 흡습 후 리플로우 과정에서 기판과 접착제 간의 박리 현상이 발생한 점이 확인되었다. 이는 비교예 1의 접착 필름이 접착제 흡습율을 조정할 수 있는 바이페닐 노볼락 에폭시 수지를 낮은 함량, 예를 들어 약 3중량 % 미만으로 포함함에 따른 것으로 보인다.

As shown in Table 2, the adhesive film prepared in Examples 1 to 2 is less than 1.50wt% moisture absorption even after exposure to 168 hours at 85 ^° C and 85 conditions, in the reflow process after high temperature curing and moisture absorption It was confirmed that no peeling phenomenon occurred between the substrate and the adhesive. In contrast, although the adhesive film of Comparative Example 1 contained an acrylate-based resin having a low moisture absorption rate, the moisture absorption rate was 1.75 wt% after exposure to 168 hours at 85 ^° C. and 85% RH conditions, and it was cured and absorbed. It was confirmed that peeling phenomenon occurred between the substrate and the adhesive during the reflow process. This is believed to be due to the fact that the adhesive film of Comparative Example 1 contains a biphenyl novolac epoxy resin capable of adjusting the adhesive hygroscopicity in a low content, for example, less than about 3% by weight.

In addition, the adhesive film of Comparative Example 2 contains an acrylate-based resin having a relatively high moisture absorption and does not contain a biphenyl novolac epoxy resin as an epoxy resin, 168 hours at 85 ^° C and 85 «H conditions After the exposure, the moisture absorption rate reached 2.1 », and it was confirmed that the peeling phenomenon between the substrate and the adhesive was large in the reflow process after the high temperature curing and the moisture absorption.

And, although the adhesive film of Comparative Example 3 and Comparative Example 4 contained a biphenyl novolak epoxy resin, but includes an acrylate resin having a relatively high moisture absorption rate, 168 hours at 85 ^° C and 85% RH conditions After exposure, the moisture absorption rate was 1.9 wt and 2.3 wt¾>, and it was confirmed that the peeling phenomenon occurred between the substrate and the adhesive during the reflow process after the high temperature curing and the moisture absorption.

Claims

[Claim]  [Claim 1] Thermoplastic resins having a moisture absorption of 168 hours or less at 85 ^° C. and 85% RH conditions for up to 168 hours of exposure; Epoxy resins including biphenyl-based epoxy resins having a softening point of 50 ^° C. to 100 ^° C .; And  It contains a hardening agent containing a novolak-type phenol resin,  A resin composition for semiconductor bonding, which meets IPC / JEDEC moisture sensitivity test level 1. [Claim 2]  According to claim 1, The IPC / JEDEC Moisture Sensitivity Test Level 1 is 50) (horizontal) X 50 隱 (vertical) at 85 ^° C and 85 ¾ RH relative humidity using the IP Ref low instrument IPC / JEDEC J-STD-020D. After 168 hours exposure of a specimen with a size of ¾ ^{'and a} weight of ¾ ^' , the sample was subjected to three passes through an IR reflow device with a maximum temperature of 260 ^° C. Defined by state,  Resin composition for semiconductor bonding. [Claim 3]  The method of claim 1, The weight ratio of the biphenyl-based epoxy resin having a softening point of 50 ^° C to 100 ^° C relative to the total weight of the thermoplastic resin, epoxy resin and the curing agent in the semiconductor adhesive resin composition, 5% by weight or more, the resin composition for semiconductor bonding. [Claim 4] The method of claim 1, The weight ratio of the biphenyl-based epoxy resin having a softening point of 50 ^° C to 100 ^° C relative to the total weight of the thermoplastic resin, epoxy resin and the curing agent in the semiconductor adhesive resin composition is 6% by weight to 30% by weight, semiconductor adhesion Resin composition. [Claim 5]  The method of claim 1,  The biphenyl epoxy resin comprises a biphenyl novolac epoxy resin, a semiconductor adhesive resin composition. [Claim 6]  The method of claim 1,  The biphenyl epoxy resin comprises a biphenyl novolac epoxy resin having an average epoxy equivalent of 220 to 300g / eq, the resin composition for semiconductor bonding. [Claim 7]  The method of claim 1, The epoxy resin further comprises at least one epoxy resin selected from the group consisting of cresol novolac type epoxy resin having a softening point of 50 ^° C to 100 ^° C and bisphenol A epoxy resin having a softening point of 5 C C to 100 ^° C ，  Resin composition for semiconductor bonding. [Claim 8]  The method of claim 7, The epoxy resin is a cresol novolak-type epoxy resin having a softening point of 50 ^° C to 100 ^° C and a bisphenol having a softening point of 5 (rc to i (xrc) compared to a biphenyl-based epoxy resin having a softening point of We to loo ° C. With A epoxy resin At least one epoxy resin selected from the group consisting of 0.25 to 1.25 by weight, comprising a resin composition for semiconductor bonding. [Claim 9]  The method of claim 1, The novolak-based phenol resin has a softening point of 60 ^° C or more, the resin composition for semiconductor bonding. [Claim 10]  The method of claim 1, The novolac-based phenol resin has a hydroxyl equivalent of 80 g / eq to 300 g / eq and a softening point of 60 ^° C to 150 ^° C, the resin composition for semiconductor bonding. [Claim 11]  The method of claim 1,  The novolak-based phenol resin includes at least one selected from the group consisting of a novolak phenol resin, a xylox novolak phenol resin, a cresol novolak phenol resin, a biphenyl novolak phenol resin, and a bisphenol A novolak phenol resin, Resin composition for semiconductor bonding. [Claim 12]  The method of claim 1,  The thermoplastic resin is polyimide, polyether imide, polyester imide, polyamide, polyether sulfone, polyether ketone, polyolefin, polyvinyl chloride, phenoxy, semi-butadiene acrylonitrile copolymer rubber and (meth) acrylic A resin composition for semiconductor bonding comprising at least one polymer resin selected from the group consisting of a rate-based resin. [Claim 13] The method of claim 12, The (meth) acrylate resin is an epoxy-containing functional group. A resin composition for semiconductor bonding, comprising a (meth) acrylate-based repeating unit and a (meth) acrylate-based resin having a glass transition temperature of C to 25 ^° C. [Claim 14]  The method of claim 12,  The (meth) acrylate-based water / / (meth) acrylate-based repeating unit containing an epoxy-based functional group. 0.1 to 10% by weight of the resin composition for semiconductor bonding. [Claim 15]  Base film; An adhesive layer formed on the base film; And an adhesive layer formed on the adhesive layer and comprising a resin composition for semiconductor bonding of Crab 1; [Claim 16]  The method of claim 15,  Dicing die-bonding film that meets IPC / JEDEC moisture sensitivity test level 1. [Claim 17]  The dicing die bonding film of claim 15; And a wafer stacked on at least one surface of the dicing die-bonding film; a preprocessing step of partially or partially dividing the semiconductor wafer;  Irradiating ultraviolet rays to the base film of the preprocessed semiconductor wafer and picking up individual chips separated by the division of the semiconductor wafer.