WO2017085131A1 - Power semiconductor module having a glob top potting compound covering a power semiconductor - Google Patents
Power semiconductor module having a glob top potting compound covering a power semiconductor Download PDFInfo
- Publication number
- WO2017085131A1 WO2017085131A1 PCT/EP2016/077867 EP2016077867W WO2017085131A1 WO 2017085131 A1 WO2017085131 A1 WO 2017085131A1 EP 2016077867 W EP2016077867 W EP 2016077867W WO 2017085131 A1 WO2017085131 A1 WO 2017085131A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- power semiconductor
- potting compound
- semiconductor module
- glob top
- top potting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H10W74/121—
-
- H10W74/01—
-
- H10W76/40—
-
- H10W72/01515—
-
- H10W72/075—
-
- H10W72/534—
-
- H10W72/884—
-
- H10W74/00—
Definitions
- Power semiconductor module having a glob top potting compound
- the invention relates to a power semiconductor module having a power semiconductor, an electrical conductor contacting the power semiconductor and a glob top potting compound covering the main surface of the power semiconductor at least partly and the electrical conductor at least partly.
- potting compounds are often used in the shape of a so-called glob top for the protection of electronic components from moisture, dust, dirt or solvents.
- the known glob tops also protect sensitive parts from mechanical load or scratches.
- the object of the invention is therefore to create a power semiconductor module that is resistant to thermal stress.
- the basic idea of the invention is to use a highly thermally conductive polymer as a glob top potting compound.
- a highly thermally conductive polymer with high thermal capacity in the shape of a glob top By using a highly thermally conductive polymer with high thermal capacity in the shape of a glob top, a thermal buffer action for heat developed by the semiconductor and at the same time a heat spreading can be achieved that reduces the thermomechanical stress acting on the power semiconductor and on the electrical conductors.
- the power semiconductor modules designed according to the invention are thereby less susceptible to stress and more durable.
- a power semiconductor module having a power semiconductor, an electrical conductor contacting the power semiconductor and a glob top potting compound covering the main surface of the power semiconductor at least partly and the electrical conductor at least partly is thus provided, the glob top potting compound being a highly thermally conductive polymer.
- the electrical conductor here is preferably a wire, heavy wire or ribbon connected to the semiconductor using a bonding method.
- the highly thermally conductive polymer is at the same time preferably an electrically conductive polymer, wherein the electrical conductivity is given by the fact that the highly thermally conductive polymer is either an intrinsically conductive polymer or a polymer filled with a metal.
- a metal in particular in the shape of a filling material of the type of metal flakes or particles distributed in the polymer, aluminum and/or copper may preferably be used. Care must be taken here that the metal-filled polymer only covers such surfaces that have the same electrical potential. This may for example very advantageously be applied to diodes that at the same time benefit from a thermal buffer function as well as from the protection of their top-side contacts.
- a polymer so electrically conductive enables an even distribution of the electric current over the semiconductor surface and in particular provides a more even transition of the electric current into the contacts.
- two or more glob top potting areas shall be applied then.
- a particularly advantageous configuration of the power semiconductor module is given if the power semiconductor module is potted with an electrically non-conducting enclosing mass, wherein a first surface portion of the potted power semiconductor module is formed by the enclosing mass and a second surface portion of the potted power semiconductor module is formed by the glob top potting compound.
- This configuration enables an electrical contacting of the semiconductor chip in the case of a potted semiconductor module from outside by using the electrical conductivity of the glob top potting compound for the electrical contacting of the power semiconductor to the outside.
- thermoplastic polymer filled with filler materials a method to produce the above-mentioned glob top potting compounds lends itself in which the preproduced body of the thermoplastic polymer filled with filler materials is applied to a preheated power module, where the preproduced body is used in a size suitable for the contact surface on the power semiconductor and is fed by a tool that is also heated. In this way the thermoplastic body may melt fast and also flow around the contacts, where appropriate. By melting fast an
- adhesive/cohesive connection is created between the polymer filled with filler materials and the power semiconductor with its contacts.
- the hot-liquefied polymer filled with filler materials is applied in a targeted manner onto the preheated assembly drop-wise (similar to a hot inkjet) or as an endless bead (like in a 3D printing method).
- Fig. 1 shows a schematic representation of a first exemplary embodiment according to the invention
- Fig. 2 shows a schematic representation of a second exemplary embodiment
- Fig. 3 shows a schematic flow chart of a particularly preferred method for the
- Fig. 1 shows a schematic side view of a first exemplary embodiment according to the invention.
- the power semiconductor module 10 shown in Fig. 1 has a power semiconductor 20 and an electrical conductor 30 contacting the power semiconductor 20, wherein the upper main surface of the power semiconductor 20 is nearly completely and the electrical conductor 30 is at least partly covered by a glob top potting compound 40.
- the glob top potting compound 40 is a highly thermally conductive polymer that provides a good spreading of the heat generated by the power semiconductor 20 and acts as a heat buffer.
- Fig. 2 shows a schematic representation of a second exemplary embodiment according to the invention.
- the power semiconductor module 10 shown in Fig. 2 also has a power
- the power semiconductor module 10 is in addition potted with an electrically non-conductive enclosing mass 50, wherein a first surface portion of the potted power semiconductor module 10 is formed by the enclosing mass 50 and a second surface portion of the potted power semiconductor module 10 is is formed by the glob top potting compound 40.
- This configuration has the advantage that the overmoulded power semiconductor 20 can be contacted via the conductive glob top potting compound 40, although the complete power semiconductor module 10 is potted with an electrically non-conductive potting compound 50.
- a preferred method for producing a power semiconductor module according to the invention exhibits the steps shown in Fig. 3, in particular 100: manufacturing a body having a glob top potting compound 40 from a highly thermally conductive polymer, 200: heating the body and/or heating the power semiconductor 20, 300: connecting the glob top potting compound 40 with the power semiconductor 20 by sealing the power semiconductor 20 with the glob top potting compound 40, and 400: cooling the power semiconductor module 10.
- the body here is formed from the glob top potting compound 40 and one electrically non-conductive enclosing mass 50.
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A power semiconductor module (10) having a power semiconductor (20), an electrical conductor (30) contacting the power semiconductor (20) and a glob top potting compound (40) covering the power semiconductor (20) completely and the electrical conductor (30) at least partly, characterized in that the glob top potting compound (40) is a highly thermally conductive polymer.
Description
Power semiconductor module having a glob top potting compound
covering a power semiconductor The invention relates to a power semiconductor module having a power semiconductor, an electrical conductor contacting the power semiconductor and a glob top potting compound covering the main surface of the power semiconductor at least partly and the electrical conductor at least partly. In electronics, potting compounds are often used in the shape of a so-called glob top for the protection of electronic components from moisture, dust, dirt or solvents. At the same time, the known glob tops also protect sensitive parts from mechanical load or scratches.
In addition, in power electronics there is the particular problem of cooling the electrical components, wherein the heat dissipation of the power semiconductor covered by the glob top is usually achieved via the contacts usually designed as heavy wires or ribbons towards a cooling structure arranged at the bottom of the power semiconductor module.
In this setup it is disadvantageous that despite great care in the production of power semiconductor modules, in case of high dynamic thermal loads that occur material fatigue of the electrical conductors in the area of the contacts to the semiconductor chip and thus malfunctions or even failure of the complete module cannot be excluded.
The object of the invention is therefore to create a power semiconductor module that is resistant to thermal stress.
The basic idea of the invention is to use a highly thermally conductive polymer as a glob top potting compound. By using a highly thermally conductive polymer with high thermal capacity in the shape of a glob top, a thermal buffer action for heat developed by the semiconductor and at the same time a heat spreading can be achieved that reduces the thermomechanical stress acting on the power semiconductor and on the electrical conductors. The power semiconductor modules designed according to the invention are thereby less susceptible to stress and more durable.
According to the invention a power semiconductor module having a power semiconductor, an electrical conductor contacting the power semiconductor and a glob top potting compound covering the main surface of the power semiconductor at least partly and the electrical conductor at least partly is thus provided, the glob top potting compound being a highly thermally conductive polymer. The electrical conductor here is preferably a wire, heavy wire or ribbon connected to the semiconductor using a bonding method.
The highly thermally conductive polymer is at the same time preferably an electrically conductive polymer, wherein the electrical conductivity is given by the fact that the highly thermally conductive polymer is either an intrinsically conductive polymer or a polymer filled with a metal. As a metal, in particular in the shape of a filling material of the type of metal flakes or particles distributed in the polymer, aluminum and/or copper may preferably be used. Care must be taken here that the metal-filled polymer only covers such surfaces that have the same electrical potential. This may for example very advantageously be applied to diodes that at the same time benefit from a thermal buffer function as well as from the protection of their top-side contacts. In addition to the thermal buffer function a polymer so electrically conductive enables an even distribution of the electric current over the semiconductor surface and in particular provides a more even transition of the electric current into the contacts.
In the case of power semiconductors whose terminal surfaces support several electrical potentials, it must be observed for the application of such electrically conductive polymers that the polymer only gets in touch with terminal surfaces of one potential. Where
appropriate, two or more glob top potting areas shall be applied then. Alternatively it is suggested, however, to only cover that terminal face partly or completely with the electrically conductive potting compound that is influenced by particular thermomechanical stress and to leave out the terminal surface areas of the control terminals from covering with the electrically conductive glob top potting compound.
A particularly advantageous configuration of the power semiconductor module is given if the power semiconductor module is potted with an electrically non-conducting enclosing mass, wherein a first surface portion of the potted power semiconductor module is formed by the enclosing mass and a second surface portion of the potted power semiconductor module is
formed by the glob top potting compound. This configuration enables an electrical contacting of the semiconductor chip in the case of a potted semiconductor module from outside by using the electrical conductivity of the glob top potting compound for the electrical contacting of the power semiconductor to the outside.
In the case of polymers filled with thermoplastic filling materials a method to produce the above-mentioned glob top potting compounds lends itself in which the preproduced body of the thermoplastic polymer filled with filler materials is applied to a preheated power module, where the preproduced body is used in a size suitable for the contact surface on the power semiconductor and is fed by a tool that is also heated. In this way the thermoplastic body may melt fast and also flow around the contacts, where appropriate. By melting fast an
adhesive/cohesive connection is created between the polymer filled with filler materials and the power semiconductor with its contacts.
In an alternative method, the hot-liquefied polymer filled with filler materials is applied in a targeted manner onto the preheated assembly drop-wise (similar to a hot inkjet) or as an endless bead (like in a 3D printing method).
The invention will be described in more detail below with reference to an exemplary embodiment of particularly preferred design illustrated in the accompanying drawings. In the drawings:
Fig. 1 shows a schematic representation of a first exemplary embodiment according to the invention;
Fig. 2 shows a schematic representation of a second exemplary embodiment
according to the invention; and
Fig. 3 shows a schematic flow chart of a particularly preferred method for the
production of a power semiconductor module according to the invention.
Fig. 1 shows a schematic side view of a first exemplary embodiment according to the invention. The power semiconductor module 10 shown in Fig. 1 has a power semiconductor 20 and an electrical conductor 30 contacting the power semiconductor 20, wherein the upper
main surface of the power semiconductor 20 is nearly completely and the electrical conductor 30 is at least partly covered by a glob top potting compound 40. According to the invention, the glob top potting compound 40 is a highly thermally conductive polymer that provides a good spreading of the heat generated by the power semiconductor 20 and acts as a heat buffer.
In the case the power semiconductor 20 has only one electric potential surface on its surface that is contacted by the electrical conductor 30, the use of an electrically conductive as well as an electrically non-conductive glob top potting compound 40 is possible. Fig. 2 shows a schematic representation of a second exemplary embodiment according to the invention. The power semiconductor module 10 shown in Fig. 2 also has a power
semiconductor 20 and an electrical conductor 30 contacting the power semiconductor 20, wherein also this power semiconductor 20 is covered nearly completely and the electrical conductor 30 is covered at least partly with a glob top potting compound 40.
Compared to the exemplary embodiment shown in Fig. 1, the power semiconductor module 10 is in addition potted with an electrically non-conductive enclosing mass 50, wherein a first surface portion of the potted power semiconductor module 10 is formed by the enclosing mass 50 and a second surface portion of the potted power semiconductor module 10 is is formed by the glob top potting compound 40.
This configuration has the advantage that the overmoulded power semiconductor 20 can be contacted via the conductive glob top potting compound 40, although the complete power semiconductor module 10 is potted with an electrically non-conductive potting compound 50.
A preferred method for producing a power semiconductor module according to the invention exhibits the steps shown in Fig. 3, in particular 100: manufacturing a body having a glob top potting compound 40 from a highly thermally conductive polymer, 200: heating the body and/or heating the power semiconductor 20, 300: connecting the glob top potting compound 40 with the power semiconductor 20 by sealing the power semiconductor 20 with the glob top potting compound 40, and 400: cooling the power semiconductor module 10.
In particular the body here is formed from the glob top potting compound 40 and one electrically non-conductive enclosing mass 50.
Claims
PATENT CLAIMS
A power semiconductor module (10) having a power semiconductor (20), an electrical conductor (30) contacting the power semiconductor (20) and a glob top potting compound (40) covering the main surface of the power semiconductor (20) at least partly and the electrical conductor (30) at least partly, characterized in that the glob top potting compound (40) is a highly thermally conductive polymer.
The power semiconductor module (10) according to Claim 1, characterized in that the highly thermally conductive polymer is an intrinsically electrically conductive polymer.
The power semiconductor module (10) according to Claim 1, characterized in that the highly thermally conductive polymer is a polymer filled with a metal.
The power semiconductor module (10) according to Claim 3, characterized in that the metal is aluminum (Al) and/or copper (Cu).
The power semiconductor module (10) according to one of the preceding claims, characterized in that the power semiconductor module (10) is potted with an electrically non-conductive enclosing mass (50), wherein a first surface portion of the potted power semiconductor module (10) is formed from the enclosing mass (50) and a second surface portion of the potted power semiconductor module (10) is is formed from the glob top potting compound (40).
6. The power semiconductor module (10) according to one of the preceding claims, characterized in that the electrical conductor (30) is a wire or a ribbon.
7. A method for manufacturing a power semiconductor module (10) according to one of the preceding claims, with the steps:
- manufacturing a body having a glob top potting compound (40) made of a highly thermally conductive polymer,
- heating the body and/or heating the power semiconductor (20),
- connecting the glob top potting compound (40) with the power semiconductor (20) by sealing the power semiconductor (20) with the glob top potting compound (40), and
- cooling the power semiconductor module (10).
8. The method according to Claim 7, characterized in that the body is formed from the glob top potting compound (40) and an electrically non-conducting enclosing mass (50).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015120109.7 | 2015-11-19 | ||
| DE102015120109.7A DE102015120109B4 (en) | 2015-11-19 | 2015-11-19 | Power semiconductor module with a power semiconductor covering Glob-top potting compound |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2017085131A1 true WO2017085131A1 (en) | 2017-05-26 |
Family
ID=57321344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2016/077867 Ceased WO2017085131A1 (en) | 2015-11-19 | 2016-11-16 | Power semiconductor module having a glob top potting compound covering a power semiconductor |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE102015120109B4 (en) |
| WO (1) | WO2017085131A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4270453A1 (en) * | 2022-04-28 | 2023-11-01 | Infineon Technologies AG | Method for fabricating a power semiconductor module comprising an encapsulation material with a high thermostability and power semiconductor module |
| EP4270454A3 (en) * | 2022-04-28 | 2023-11-22 | Infineon Technologies AG | Power semiconductor module comprising a first and a second compartment and method for fabricating the same |
| US12218018B2 (en) | 2022-04-21 | 2025-02-04 | Infineon Technologies Ag | Semiconductor encapsulant strength enhancer |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102020134563A1 (en) | 2020-12-22 | 2022-06-23 | Danfoss Silicon Power Gmbh | Power module and method of manufacturing a power module |
| DE102021116053A1 (en) | 2021-06-22 | 2022-12-22 | Danfoss Silicon Power Gmbh | Electrical conductor, electronic assembly with an electrical conductor and method for manufacturing an electronic assembly with an electrical conductor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5866953A (en) * | 1996-05-24 | 1999-02-02 | Micron Technology, Inc. | Packaged die on PCB with heat sink encapsulant |
| US20050045369A1 (en) * | 2003-08-28 | 2005-03-03 | Matsushita Electric Industrial Co., Ltd. | Circuit component built-in module and method for manufacturing the same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59198740A (en) * | 1983-04-25 | 1984-11-10 | Mitsubishi Electric Corp | Resin seal type semiconductor compound element |
| JP2002057253A (en) * | 2000-08-10 | 2002-02-22 | Nec Corp | Semiconductor device and method of manufacturing the same |
| US20050095410A1 (en) * | 2001-03-19 | 2005-05-05 | Mazurkiewicz Paul H. | Board-level conformal EMI shield having an electrically-conductive polymer coating over a thermally-conductive dielectric coating |
| JP2005032912A (en) * | 2003-07-10 | 2005-02-03 | Hitachi Industrial Equipment Systems Co Ltd | Power converter |
| US20070267737A1 (en) * | 2006-05-17 | 2007-11-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Packaged devices and methods for forming packaged devices |
| JP2008288433A (en) * | 2007-05-18 | 2008-11-27 | Yaskawa Electric Corp | Resin mold method and apparatus for mounting substrate, and resin mold mounting substrate |
-
2015
- 2015-11-19 DE DE102015120109.7A patent/DE102015120109B4/en not_active Expired - Fee Related
-
2016
- 2016-11-16 WO PCT/EP2016/077867 patent/WO2017085131A1/en not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5866953A (en) * | 1996-05-24 | 1999-02-02 | Micron Technology, Inc. | Packaged die on PCB with heat sink encapsulant |
| US20050045369A1 (en) * | 2003-08-28 | 2005-03-03 | Matsushita Electric Industrial Co., Ltd. | Circuit component built-in module and method for manufacturing the same |
Non-Patent Citations (1)
| Title |
|---|
| H. S. TEKCE ET AL: "Effect of Particle Shape on Thermal Conductivity of Copper Reinforced Polymer Composites", JOURNAL OF REINFORCED PLASTICS AND COMPOSITES, vol. 26, no. 1, 1 January 2007 (2007-01-01), US, pages 113 - 121, XP055331025, ISSN: 0731-6844, DOI: 10.1177/0731684407072522 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12218018B2 (en) | 2022-04-21 | 2025-02-04 | Infineon Technologies Ag | Semiconductor encapsulant strength enhancer |
| EP4270453A1 (en) * | 2022-04-28 | 2023-11-01 | Infineon Technologies AG | Method for fabricating a power semiconductor module comprising an encapsulation material with a high thermostability and power semiconductor module |
| EP4270454A3 (en) * | 2022-04-28 | 2023-11-22 | Infineon Technologies AG | Power semiconductor module comprising a first and a second compartment and method for fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102015120109A1 (en) | 2017-05-24 |
| DE102015120109B4 (en) | 2018-03-01 |
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