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WO2017082373A1 - Procédé de gravure d'objet à traiter - Google Patents

Procédé de gravure d'objet à traiter Download PDF

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Publication number
WO2017082373A1
WO2017082373A1 PCT/JP2016/083455 JP2016083455W WO2017082373A1 WO 2017082373 A1 WO2017082373 A1 WO 2017082373A1 JP 2016083455 W JP2016083455 W JP 2016083455W WO 2017082373 A1 WO2017082373 A1 WO 2017082373A1
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WO
WIPO (PCT)
Prior art keywords
axis
value
etching
gas
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2016/083455
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English (en)
Japanese (ja)
Inventor
義弘 梅澤
佐藤　淳
清司 前田
充敬 大秦
松本　和也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2016121815A external-priority patent/JP6613207B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to US15/775,218 priority Critical patent/US10685816B2/en
Priority to KR1020187013302A priority patent/KR102651285B1/ko
Publication of WO2017082373A1 publication Critical patent/WO2017082373A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H10P50/242—
    • H10P72/70—

Definitions

  • Embodiments described herein relate generally to a method for etching a workpiece.
  • an MRAM (Magnetic Random Access Memory) element having an MTJ (Magnetic Tunnel Junction) structure As a kind of memory element using a magnetoresistive effect element, an MRAM (Magnetic Random Access Memory) element having an MTJ (Magnetic Tunnel Junction) structure has attracted attention.
  • the MRAM element includes a multilayer film made of a difficult-to-etch material containing a metal such as a ferromagnetic material. In manufacturing such an MRAM element, the multilayer film is etched using a mask made of a metal material such as Ta (tantalum) or TiN.
  • Patent Document 1 is a method of manufacturing a semiconductor device including a step of forming a magnetoresistive effect element using a magnetic material containing at least one of cobalt, iron, and nickel, and the magnetoresistive effect
  • the step of forming the element includes a step of forming a laminated body including a plurality of layers containing a magnetic material on a semiconductor substrate and a plasma etching using a gas containing chlorine in a vacuum atmosphere.
  • the plasma density distribution in the processing container is biased depending on the configuration of the plasma processing apparatus (the shape of the processing container, etc.).
  • the etching rate with respect to the wafer surface in the container is also non-uniform. If the etching rate is not uniform, the quality of the wafer after etching is lowered, which is not preferable from the viewpoint of manufacturing efficiency. Therefore, it is necessary to improve the uniformity of the etching rate during plasma etching.
  • a method for etching an object to be processed using a plasma processing apparatus includes the holding structure that holds an object to be processed and a processing container that holds the holding structure.
  • This method is a step (hereinafter referred to as “step a”) of etching a target object with plasma generated in a processing container, and the holding structure holding the target object during the execution of the etching.
  • the step of performing a process of tilting and rotating (hereinafter referred to as “process b”) is provided.
  • the process b sequentially realizes a plurality of inclined rotation states with respect to the holding structure holding the object to be processed. In the inclined rotation state, the central axis of the object to be processed is in the same plane as the central axis.
  • the object to be processed is rotated around the center axis for a predetermined processing time while maintaining the state inclined with respect to the reference axis, and the inclination of the center axis with respect to the reference axis in a plurality of inclined rotation states
  • the combination of the corner value and the processing time is different from each other.
  • a plurality of tilt rotation states with different inclination angles and processing times of the object to be processed can be realized in combination during the execution of etching. Therefore, by adjusting the combination, the etching rate for the object to be processed can be made uniform. It can be improved sufficiently.
  • the etching rate with respect to the surface of the object to be processed in a state where the central axis is not inclined with respect to the reference axis, is realized in an axially symmetric distribution around the reference axis, and the The distribution of the etching rate is highest at the position of the reference axis on the surface. Accordingly, since the etching rate distribution is an axisymmetric distribution with the reference axis as the center when the central axis is not inclined, the center of the etching rate distribution is covered by suitably inclining the central axis.
  • the distribution of the etching rate can be adjusted with high accuracy including the interval between the contour lines of the distribution by eliminating the axial symmetry by moving on the surface of the processing body.
  • a plurality of predicted distributions of the etching rate with respect to the surface of the object to be processed are acquired in advance before the execution of the step a, and the predicted distribution is determined based on the value of the inclination angle and the etching conditions performed in the processing container.
  • the etching rate obtained for each of the multiple tilt rotation states corresponds to one of the multiple prediction distributions, and the processing time for each of the multiple tilt rotation states is given to the prediction distribution.
  • the plurality of prediction distributions of the same conditions as the etching conditions performed in step a and the weights of the plurality of prediction distributions are identified from among a plurality of prediction distributions before step a.
  • the predicted distribution is a function of the coordinates (x, y, z) of the points in the processing vessel and includes parameters ⁇ , ⁇ , ⁇ , ⁇ , ⁇ / ⁇ (x ⁇ ) 2 + ( y ⁇ ) 2 + (z ⁇ ) 2 ⁇ corresponds to a numerical value obtained by integrating ⁇ / 2 around the central axis, and x, y, and z represent points in the processing container, Expressed by the respective coordinates of the X, Y, and Z axes of the XYZ orthogonal coordinate system set in the processing vessel, ⁇ , ⁇ , and ⁇ are predetermined references on the plasma source side of the plasma processing apparatus.
  • the point is represented by the coordinates of the X axis, the Y axis, and the Z axis, and ⁇ is a processing container when the length from the reference point to the point (x, y, z) is a unit length.
  • the parameters ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ are performed under the same conditions as the etching conditions in step a. It identified by measured values of etching rate by etching.
  • the tilt angle and the processing time for each tilt rotation state can be specified by using the predicted distribution. It can be done with high accuracy.
  • the values of the parameters ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ are determined for each value corresponding to the value of the inclination angle. As described above, since the values of the parameters ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ are determined for each value corresponding to the value of the inclination angle, if the predicted distribution is specified, an etching rate corresponding to the predicted distribution is realized. The inclination angle can be easily specified.
  • the position of the intersection of the center axis and the reference axis can be moved along the reference axis, and the predicted distribution is determined based on the value of the inclination angle and the conditions of etching performed in the processing vessel.
  • the values of the parameters ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ are determined for each value according to the value of the inclination angle and the position of the intersection.
  • a predicted distribution according to the position of the intersection of the central axis and the reference axis can be used, so that the preferable inclination angle and processing time used in step a can be more detailed. Can be specified.
  • the position of the intersection of the upper surface of the electrostatic chuck that is included in the holding structure and holds the object to be processed and the central axis is moved along the central axis while maintaining the orientation of the upper surface.
  • the predicted distribution varies depending on the combination of the inclination angle value and the etching conditions performed in the processing vessel, and the position of the intersection, and the values of the parameters ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ are It is determined for each value corresponding to the value of the inclination angle and the position of the intersection.
  • a predicted distribution according to the position of the intersection between the upper surface of the electrostatic chuck and the central axis can be used, so that a suitable inclination angle and processing time used in step a can be used. Can be identified in more detail.
  • the uniformity of the etching rate is improved during plasma etching.
  • FIG. 1 is a diagram schematically illustrating a plasma processing apparatus according to an embodiment.
  • FIG. 2 is a diagram schematically illustrating a plasma processing apparatus according to an embodiment.
  • FIG. 3 is a diagram showing a pulse-modulated bias voltage.
  • FIG. 4 is a cross-sectional view showing an example of the object to be processed.
  • FIG. 5 is a diagram illustrating a plasma source according to an embodiment.
  • FIG. 6 is a diagram illustrating a plasma source according to an embodiment.
  • FIG. 7 is a cross-sectional view illustrating a holding structure according to an embodiment.
  • FIG. 8 is a cross-sectional view illustrating a holding structure according to an embodiment.
  • FIG. 9 is a flowchart illustrating a method for etching a multilayer film according to an embodiment.
  • FIGS. 1 is a diagram schematically illustrating a plasma processing apparatus according to an embodiment.
  • FIG. 2 is a diagram schematically illustrating a plasma processing apparatus according to an embodiment.
  • FIGS. 13A and 13B are cross-sectional views showing the state of the object to be processed during or after each step of the method MT.
  • 14 (a) and 14 (b) are cross-sectional views showing the state of the object to be processed during or after each step of the method MT.
  • FIG. 15 is a flowchart showing an embodiment of the process ST9.
  • FIG. 16 is a flowchart showing another embodiment of step ST9.
  • FIG. 17 is a diagram illustrating the wafer surface in polar coordinates according to an embodiment.
  • FIG. 18 is a diagram illustrating an example of the content of an etching rate function according to an embodiment.
  • FIG. 19 is a diagram showing an example of the etching rate distribution on the surface of the wafer according to the embodiment.
  • FIG. 19A shows a case where the value of the tilt angle of the wafer is zero [degrees].
  • (B) shows the case where the value of the tilt angle of the wafer W is 20 [degrees]
  • (c) shows the case where the value of the tilt angle of the wafer is 45 [degrees].
  • FIG. 20 is a diagram showing the etching rate distribution shown in FIG. 19 along the radial direction of the surface of the wafer.
  • Part (a), part (b), part (c), and part (d) of FIG. 21 are diagrams illustrating an example of the content of an etching rate function according to a modification of the embodiment.
  • Parts (a) and (b) of FIG. 22 are diagrams illustrating an example of the content of an etching rate function according to another modification of the embodiment.
  • FIG. 1 and 2 are diagrams schematically illustrating a plasma processing apparatus according to an embodiment, in which a processing container is broken in one plane including an axis PX (reference axis of the processing container 12) extending in a vertical direction.
  • the plasma processing apparatus is shown.
  • FIG. 1 shows a plasma processing apparatus in which the holding structure described later is not inclined
  • FIG. 2 shows the plasma processing apparatus in a state where the holding structure is inclined. Yes.
  • the plasma processing apparatus 10 shown in FIGS. 1 and 2 includes a processing container 12, a gas supply system 14, a plasma source 16, a holding structure 18, an exhaust system 20, a bias power supply unit 22, and a control unit Cnt.
  • the processing container 12 has a substantially cylindrical shape.
  • the central axis of the processing container 12 coincides with the axis PX.
  • the processing container 12 provides a space S for performing plasma processing on an object to be processed (hereinafter also referred to as “wafer W”).
  • the axis line PX extends from the ceiling side of the processing container 12 provided with the plasma source 16 and the dielectric plate 194 to the bottom side of the processing container 12 provided with the holding structure 18 and the automatic pressure controller 20a. It extends. 1 and 2 show an XYZ orthogonal coordinate system for specifying the position inside the processing container 12 (specification means finding out, and so on).
  • the XYZ orthogonal coordinate system includes an X axis, a Y axis, and a Z axis that are perpendicular to each other, and an origin OR where these three axes intersect.
  • FIG. 1 is a view of the inside of the plasma processing apparatus 10 as viewed in the Y direction, and FIG.
  • the axis PX coincides with the Z axis, is on the YZ plane, and is orthogonal to the XY plane.
  • the processing container 12 has a substantially constant width in the intermediate portion 12a in the height direction, that is, a portion that houses the holding structure 18. Further, the processing container 12 has a tapered shape in which the width gradually decreases from the lower end of the intermediate portion toward the bottom. Further, the bottom of the processing container 12 provides an exhaust port 12e, and the exhaust port 12e is formed symmetrically with respect to the axis PX.
  • the gas supply system 14 is configured to supply gas into the processing container 12.
  • the gas supply system 14 includes a first gas supply unit 14a and a second gas supply unit 14b.
  • the first gas supply unit 14 a is configured to supply the first processing gas into the processing container 12.
  • the second gas supply unit 14 b is configured to supply the second processing gas into the processing container 12. Details of the gas supply system 14 will be described later.
  • the plasma source 16 is configured to excite the gas supplied into the processing container 12.
  • the plasma source 16 is provided on the top of the processing container 12.
  • the central axis of the plasma source 16 coincides with the axis PX. Details regarding an example of the plasma source 16 will be described later.
  • the holding structure 18 is configured to hold the wafer W in the processing container 12.
  • the holding structure 18 is configured to be rotatable about the first axis AX1 perpendicular to the axis PX.
  • the first axis AX1 coincides with the central axis of the inclined shaft portion 50.
  • the holding structure 18 is configured to rotate the wafer W about the second axis AX2 perpendicular to the first axis AX1.
  • the holding structure 18 can be inclined with respect to the axis PX by rotation about the first axis AX1.
  • the plasma processing apparatus 10 has a driving device 24.
  • the driving device 24 is provided outside the processing container 12 and generates a driving force for rotating the holding structure 18 around the first axis AX1.
  • the first axis AX1 extends parallel to the horizontal reference plane FA1, the XY plane, and the X axis, is orthogonal to the Y axis and the Z axis, and is orthogonal to the vertical reference plane FA2.
  • the horizontal reference plane FA1 is orthogonal to the axis PX, includes the origin OR, is orthogonal to the Z axis, and overlaps the XY plane.
  • the horizontal reference plane FA1 includes the surface FS of the wafer W placed on the holding unit 30 of the holding structure 18.
  • the vertical reference plane FA2 coincides with the YZ plane, is orthogonal to the horizontal reference plane FA1, the XY plane, the X axis, and the first axis AX1, and includes the axis PX, the second axis AX2, and the origin OR.
  • the first axis AX1 is orthogonal to the axis PX, the second axis AX2, and the vertical reference plane FA2, and coincides with the central axis of the inclined shaft portion 50.
  • the surface FS of the wafer W is orthogonal to the vertical reference plane FA2 and the second axis AX2, and extends parallel to the X axis and the first axis AX1.
  • the second axis AX2 is perpendicular to the surface FS of the wafer W.
  • the second axis AX2 coincides with the central axis of the wafer W.
  • the second axis AX2 passes through the center CE of the surface FS of the wafer W.
  • the axis PX and the first axis AX1 intersect at a single intersection XO.
  • the intersection XO is on the first axis AX1, and is on the vertical reference plane FA2, the YZ plane, and the ZX plane.
  • the distance from the intersection XO to the horizontal reference plane FA1 is a distance L.
  • the second axis AX2 coincides with the axis PX, as shown in FIG.
  • the surface FS of the wafer W is orthogonal to the axis PX, overlaps the horizontal reference planes FA1 and XY, and includes the origin OR.
  • the center CE of the surface FS coincides with the origin OR and is on the axis PX and the second axis AX2, respectively.
  • the second axis AX2 (center axis of the wafer W) overlaps the axis PX and includes the origin OR.
  • the origin OR is assumed to coincide with the center CE of the surface FS of the wafer W as described above, but is not limited thereto.
  • the second axis AX2 is inclined with respect to the axis PX.
  • the inclination angle AN of the second axis AX2 is an angle formed by the second axis AX2 and the axis PX.
  • the inclination angle AN is an angle in the YZ plane.
  • the second axis AX2 and the axis PX are on the YZ plane.
  • the value ⁇ of the inclination angle AN of the second axis AX2 is obtained when the holding structure 18 is rotated and inclined about the first axis AX1 so that the surface FS of the wafer W faces the ⁇ Y direction.
  • the value ⁇ of the inclination angle AN of the second axis AX2 is zero. Details of the holding structure 18 will be described later.
  • the exhaust system 20 is configured to depressurize the space in the processing container 12.
  • the exhaust system 20 includes an automatic pressure controller 20a, a turbo molecular pump 20b, and a dry pump 20c.
  • the turbo molecular pump 20b is provided downstream of the automatic pressure controller 20a.
  • the dry pump 20c is directly connected to the space in the processing container 12 through a valve 20d.
  • the dry pump 20c is provided downstream of the turbo molecular pump 20b via the valve 20e.
  • An exhaust system including the automatic pressure controller 20 a and the turbo molecular pump 20 b is attached to the bottom of the processing vessel 12. Further, the exhaust system including the automatic pressure controller 20 a and the turbo molecular pump 20 b is provided immediately below the holding structure 18. Therefore, in this plasma processing apparatus 10, a uniform exhaust flow from the periphery of the holding structure 18 to the exhaust system 20 can be formed. Thereby, efficient exhaust can be achieved. Further, it is possible to uniformly diffuse the plasma generated in the processing container 12.
  • a rectifying member 26 may be provided in the processing container 12.
  • the rectifying member 26 has a substantially cylindrical shape closed at the lower end.
  • the rectifying member 26 extends along the inner wall surface of the processing container 12 so as to surround the holding structure 18 from the side and from below.
  • the rectifying member 26 has an upper portion 26a and a lower portion 26b.
  • the upper portion 26 a has a cylindrical shape with a certain width, and extends along the inner wall surface of the intermediate portion 12 a of the processing container 12.
  • the lower portion 26b is continuous with the upper portion 26a below the upper portion 26a.
  • the lower part 26b has a taper shape in which the width gradually decreases along the inner wall surface of the processing container 12, and has a flat plate shape at the lower end.
  • a number of openings (through holes) are formed in the lower portion 26b. According to the rectifying member 26, a pressure difference can be formed between the inside of the rectifying member 26, that is, the space in which the wafer W is accommodated, and the outside of the rectifying member 26, that is, the space on the exhaust side. It becomes possible to adjust the residence time of the gas in the space in which the wafer W is accommodated. Further, uniform exhaust can be realized.
  • the bias power supply unit 22 is configured to selectively apply a bias voltage and high-frequency bias power for drawing ions into the wafer W to the holding structure 18.
  • the bias power supply unit 22 includes a first power supply 22a and a second power supply 22b.
  • the first power supply 22 a generates a pulse-modulated DC voltage (hereinafter referred to as “modulated DC voltage”) as a bias voltage applied to the holding structure 18.
  • FIG. 3 is a diagram illustrating a pulse-modulated DC voltage. As shown in FIG. 3, the modulation DC voltage, a period T L that takes low-level and duration T H the voltage value takes a high level is a voltage alternating.
  • the modulated DC voltage can be set to a voltage value within a range of 0 to 1200 [V], for example.
  • the high level voltage value of the modulation DC voltage is a voltage value set within the range of the voltage value, and the high level voltage value of the modulation DC voltage is a voltage value lower than the high level voltage value. .
  • the sum of the period TL successive period T H and the period T H constitute one cycle T C.
  • the frequency of the pulse modulation of the modulation current voltage is 1 / T C.
  • the frequency of pulse modulation can be arbitrarily set, but is a frequency capable of forming a sheath that enables ion acceleration, and is, for example, 400 [kHz].
  • the on-duty ratio, i.e., the ratio occupied by the period TH in one period T C is the ratio in the range of 10-90%.
  • the second power source 22 b is configured to supply the holding structure 18 with high-frequency bias power for drawing ions into the wafer W.
  • the frequency of the high-frequency bias power is an arbitrary frequency suitable for drawing ions into the wafer W, and is, for example, 400 [kHz].
  • the modulation DC voltage from the first power supply 22 a and the high frequency bias power from the second power supply 22 b can be selectively supplied to the holding structure 18.
  • the selective supply of the modulated DC voltage and the high frequency bias power can be controlled by the control unit Cnt.
  • the control unit Cnt is a computer including a processor, a storage unit, an input device, a display device, and the like, for example.
  • the control unit Cnt operates according to a program based on the input recipe and sends out a control signal.
  • Each unit of the plasma processing apparatus 10 is controlled by a control signal from the control unit Cnt.
  • the gas supply system 14 includes the first gas supply unit 14a and the second gas supply unit 14b.
  • the first gas supply unit 14a supplies the first processing gas in the processing container 12 through one or more gas discharge holes 14e.
  • the second gas supply unit 14b supplies the second processing gas in the processing container 12 through one or more gas discharge holes 14f.
  • the gas discharge hole 14e is provided at a position closer to the plasma source 16 than the gas discharge hole 14f. Therefore, the first processing gas is supplied to a position closer to the plasma source 16 than the second processing gas.
  • the number of each of the gas discharge holes 14e and 14f is “1”, but a plurality of gas discharge holes 14e and a plurality of gas discharge holes 14f are provided. Also good.
  • the plurality of gas discharge holes 14e may be evenly arranged in the circumferential direction with respect to the axis PX.
  • the plurality of gas discharge holes 14f may be evenly arranged in the circumferential direction with respect to the axis PX.
  • a partition plate so-called ion trap, may be provided between a region where gas is discharged by the gas discharge hole 14e and a region where gas is discharged by the gas discharge hole 14f. This makes it possible to adjust the amount of ions from the first processing gas plasma toward the wafer W.
  • the first gas supply unit 14a may have one or more gas sources, one or more flow controllers, and one or more valves. Therefore, the flow rate of the first processing gas from one or more gas sources of the first gas supply unit 14a can be adjusted.
  • the second gas supply unit 14b may have one or more gas sources, one or more flow controllers, and one or more valves. Therefore, the flow rate of the second processing gas from one or more gas sources of the second gas supply unit 14b can be adjusted.
  • the flow rate of the first processing gas from the first gas supply unit 14a and the timing of the supply of the first processing gas, the flow rate of the second processing gas from the second gas supply unit 14b, and the second The processing gas supply timing is individually adjusted by the control unit Cnt.
  • FIG. 4 is a cross-sectional view showing an example of the object to be processed.
  • a wafer W shown in FIG. 4 is an object to be processed from which an MRAM element having an MTJ structure can be formed from the wafer W, and includes a multilayer film constituting the MRAM element.
  • the wafer W has a base layer L1, a lower magnetic layer L2, an insulating layer L3, an upper magnetic layer L4, and a mask MSK.
  • the underlayer L1 includes a lower electrode layer L11, an antiferromagnetic layer L12, a ferromagnetic layer L13, and a nonmagnetic layer L14.
  • the lower electrode layer L11 can be made of Ta, for example.
  • the antiferromagnetic layer L12 is provided on the lower electrode layer L11, and can be made of, for example, PtMn. That is, the foundation layer L1 can include a PtMn layer.
  • the ferromagnetic layer L13 is provided on the antiferromagnetic layer L12 and can be made of, for example, CoFe.
  • the nonmagnetic layer L14 is provided on the ferromagnetic layer L13, and may be made of, for example, Ru.
  • the lower magnetic layer L2, the insulating layer L3, and the upper magnetic layer L4 are multilayer films that form an MTJ structure.
  • the lower magnetic layer L2 is provided on the nonmagnetic layer L14 and can be made of, for example, CoFeB.
  • the ferromagnetic layer L13, the nonmagnetic layer L14, and the lower magnetic layer L2 constitute a magnetization fixed layer.
  • the insulating layer L3 is provided between the lower magnetic layer L2 and the upper magnetic layer L4, and can be made of, for example, magnesium oxide (MgO).
  • the upper magnetic layer L4 is provided on the insulating layer L3 and can be made of, for example, CoFeB.
  • the mask MSK is provided on the upper magnetic layer L4.
  • the mask MSK may include a first layer L21 and a second layer L22.
  • the first layer L21 is provided on the upper magnetic layer L4, and may be made of Ta, for example.
  • the second layer L22 is provided on the first layer L21 and can be made of, for example, TiN.
  • the multilayer film from the upper magnetic layer L4 to the antiferromagnetic layer L12 is etched in a region not covered with the mask MSK.
  • three examples of the first processing gas and the second processing gas will be described taking the wafer W as an example.
  • the first process gas may be a noble gas.
  • the rare gas is He gas, Ne gas, Ar gas, Kr gas, or Xe gas.
  • the first processing gas may be a gas selected from He gas, Ne gas, Ar gas, Kr gas, and Xe gas. For example, when the multilayer film of the wafer W shown in FIG. 4 is etched using the plasma processing apparatus 10, a rare gas suitable for etching each layer is selected.
  • the second processing gas may be a hydrogen-containing gas.
  • the hydrogen-containing gas include CH 4 gas or NH 3 gas.
  • Such active species of hydrogen derived from the second processing gas reforms the substance contained in the multilayer film, that is, the metal into a state in which it can be easily etched by a reducing action.
  • carbon contained in the CH 4 gas or nitrogen contained in the NH 3 gas is combined with a material constituting the mask MSK to form a metal compound.
  • the mask MSK becomes solid, and the etching rate [ ⁇ m / min] of the mask MSK with respect to the etching rate [ ⁇ m / min] of the multilayer film (“min” means minutes). Becomes smaller.
  • the etching selectivity of the layers constituting the multilayer film other than the mask MSK on the wafer W can be improved.
  • the first process gas and the second process gas may be excited by the plasma source 16.
  • the supply amounts of the first processing gas and the second processing gas at the time of plasma generation are individually controlled by the control by the control unit Cnt.
  • the first processing gas may be a decomposable gas that is dissociated by plasma generated by the plasma source 16 and generates radicals.
  • the radical derived from the first processing gas may be a radical that causes a reduction reaction, an oxidation reaction, a chlorination reaction, or a fluorination reaction.
  • the first processing gas may be a gas containing a hydrogen element, an oxygen element, a chlorine element, or a fluorine element.
  • the first processing gas may be Ar, N 2 , O 2 , H 2 , He, BCl 3 , Cl 2 , CF 4 , NF 3 , CH 4 , or SF 6 .
  • Examples of the first processing gas that generates radicals for the reduction reaction include H 2 . O 2 etc.
  • Examples of the first processing gas that generates radicals of the chlorination reaction include BCl 3 and Cl 2 .
  • the first processing gas that generates radicals of the fluorination reaction include CF 4 , NF 3 , and SF 6 .
  • the second processing gas may be a gas that reacts with a substance to be etched without being exposed to plasma.
  • a gas whose reaction with the substance to be etched depends on the temperature of the holding structure 18 may be included.
  • HF, Cl 2 , HCl, H 2 O, PF 3 , F 2 , ClF 3 , COF 2 , cyclopentadiene, Amidinato, or the like is used as the second processing gas.
  • the second processing gas may include an electron donating gas.
  • the electron donating gas generally refers to a gas composed of atoms having greatly different electronegativity or ionization potential or a gas including atoms having a lone electron pair.
  • the electron donating gas has a property of easily giving electrons to other compounds.
  • the electron donating gas has a property of being bonded to a metal compound or the like as a ligand and evaporating.
  • the electron donating gas include SF 6 , PH 3 , PF 3 , PCl 3 , PBr 3 , PI 3 , CF 4 , AsH 3 , SbH 3 , SO 3 , SO 2 , H 2 S, SeH 2 , TeH 2 , Examples include Cl 3 F, H 2 O, H 2 O 2 and the like, or a gas containing a carbonyl group.
  • the first processing gas and the second processing gas of the second example can be used for removing deposits generated by etching the multilayer film of the wafer W shown in FIG. Specifically, the deposit is modified by radicals derived from the first processing gas, and then a reaction between the modified deposit and the second processing gas is caused. As a result, the deposit can be easily exhausted.
  • the first processing gas and the second processing gas can be supplied alternately. Plasma is generated by the plasma source 16 when the first processing gas is supplied, and plasma generation by the plasma source 16 is stopped when the second gas is supplied. The supply of the first processing gas and the second processing gas is controlled by the control unit Cnt.
  • the supply amount of the first process gas and the supply amount of the second process gas according to the plasma state at the time of plasma generation and plasma extinction are the first gas supply unit by the control unit Cnt. It can be realized by control of 14a and the second gas supply unit 14b.
  • FIG. 5 is a diagram illustrating a plasma source according to an embodiment, and is a diagram illustrating the plasma source viewed from the Y direction in FIG. 1.
  • FIG. 6 is a diagram showing a plasma source according to an embodiment, and shows the plasma source viewed from the vertical direction.
  • an opening is provided in the top of the processing container 12, and the opening is closed by a dielectric plate 194.
  • the dielectric plate 194 is a plate-like body and is made of quartz glass or ceramic.
  • the plasma source 16 is provided on the dielectric plate 194.
  • the plasma source 16 includes a high frequency antenna 140 and a shield member 160.
  • the high frequency antenna 140 is covered with a shield member 160.
  • the high-frequency antenna 140 includes an inner antenna element 142A and an outer antenna element 142B.
  • the inner antenna element 142A is provided closer to the axis PX than the outer antenna element 142B.
  • the outer antenna element 142B is provided outside the inner antenna element 142A so as to surround the inner antenna element 142A.
  • Each of the inner antenna element 142A and the outer antenna element 142B is made of, for example, a conductor such as copper, aluminum, or stainless steel, and extends spirally about the axis PX.
  • Both the inner antenna element 142A and the outer antenna element 142B are sandwiched and integrated with a plurality of sandwiching bodies 144.
  • the plurality of sandwiching bodies 144 are, for example, rod-shaped members, and are arranged radially with respect to the axis PX.
  • the shield member 160 has an inner shield wall 162A and an outer shield wall 162B.
  • the inner shield wall 162A has a cylindrical shape extending in the vertical direction, and is provided between the inner antenna element 142A and the outer antenna element 142B.
  • the inner shield wall 162A surrounds the inner antenna element 142A.
  • the outer shield wall 162B has a cylindrical shape extending in the vertical direction and is provided so as to surround the outer antenna element 142B.
  • An inner shield plate 164A is provided on the inner antenna element 142A.
  • the inner shield plate 164A has a disk shape and is provided so as to close the opening of the inner shield wall 162A.
  • An outer shield plate 164B is provided on the outer antenna element 142B.
  • the outer shield plate 164B is an annular plate, and is provided so as to close the opening between the inner shield wall 162A and the outer shield wall 162B.
  • a high-frequency power source 150A and a high-frequency power source 150B are connected to the inner antenna element 142A and the outer antenna element 142B, respectively.
  • the high frequency power supply 150A and the high frequency power supply 150B are high frequency power supplies for generating plasma.
  • the high frequency power supply 150A and the high frequency power supply 150B supply high frequency power of the same frequency or different frequencies to the inner antenna element 142A and the outer antenna element 142B, respectively.
  • a predetermined frequency for example, 40 [MHz]
  • the inner antenna element 142A is introduced into the processing container 12 by an induced magnetic field formed in the processing container 12.
  • the processed processing gas is excited, and a donut-shaped plasma is generated in the central portion on the wafer W.
  • a high frequency of a predetermined frequency for example, 60 [MHz]
  • the outer antenna element 142B is introduced into the processing container 12 by an induced magnetic field formed in the processing container 12.
  • the processed gas is excited, and another donut-shaped plasma is generated at the peripheral edge on the wafer W. These plasmas generate radicals from the process gas.
  • the frequency of the high frequency power output from the high frequency power supply 150A and the high frequency power supply 150B is not limited to the above-described frequency.
  • the frequency of the high frequency power output from the high frequency power supply 150A and the high frequency power supply 150B may be various frequencies such as 13.56 [MHz], 27 [MHz], 40 “MHz”, and 60 [MHz].
  • the plasma source 16 can ignite the plasma of the processing gas even in an environment having a pressure of 1 [mTorr] (0.1333 [Pa]). Under a low pressure environment, the mean free path of ions in the plasma increases. Therefore, etching by sputtering of rare gas atom ions becomes possible. Further, in a low-pressure environment, it is possible to exhaust the material while suppressing the etched material from reattaching to the wafer W.
  • [Retention structure] 7 and 8 are cross-sectional views showing a holding structure according to an embodiment.
  • 7 shows a cross-sectional view of the holding structure viewed from the Y direction (see FIG. 1)
  • FIG. 8 shows a cross-sectional view of the holding structure viewed from the X direction (see FIG. 1).
  • the holding structure 18 includes a holding part 30, a container part 40, and an inclined shaft part 50.
  • the holding unit 30 is a mechanism that holds the wafer W and rotates the wafer W by rotating about the second axis AX2. Note that, as described above, the second axis AX2 coincides with the axis PX when the holding structure 18 is not inclined.
  • the holding unit 30 includes an electrostatic chuck 32, a lower electrode 34, a rotating shaft unit 36, and an insulating member 35.
  • the electrostatic chuck 32 is configured to hold the wafer W on its upper surface 32a.
  • the electrostatic chuck 32 has a substantially disk shape with the second axis AX2 as the central axis, and has an electrode film provided as an inner layer of the insulating film.
  • the electrostatic chuck 32 generates an electrostatic force when a voltage is applied to the electrode film. By this electrostatic force, the electrostatic chuck 32 attracts the wafer W placed on the upper surface 32a.
  • a heat transfer gas such as He gas is supplied between the electrostatic chuck 32 and the wafer W. Further, a heater for heating the wafer W may be incorporated in the electrostatic chuck 32.
  • the electrostatic chuck 32 is provided on the lower electrode 34.
  • the lower electrode 34 has a substantially disk shape with the second axis AX2 as the central axis.
  • the lower electrode 34 has a first portion 34a and a second portion 34b.
  • the first portion 34a is a portion on the center side of the lower electrode 34 extending along the second axis AX2, and the second portion 34b is further away from the second axis AX2 than the first portion 34a, that is, the first portion 34a. It is a portion extending outside the one portion 34a.
  • the upper surface of the first portion 34a and the upper surface of the second portion 34b are continuous, and the upper surface of the first portion 34a and the upper surface of the second portion 34b constitute a substantially flat upper surface of the lower electrode 34.
  • An electrostatic chuck 32 is in contact with the upper surface of the lower electrode 34.
  • the first portion 34a protrudes downward from the second portion 34b and has a cylindrical shape. That is, the lower surface of the first portion 34a extends below the lower surface of the second portion 34b.
  • the lower electrode 34 is made of a conductor such as aluminum.
  • the lower electrode 34 is electrically connected to the bias power supply unit 22 described above. That is, the modulated direct current voltage from the first power supply 22a and the high frequency bias power from the second power supply 22b can be selectively supplied to the lower electrode 34.
  • the lower electrode 34 is provided with a refrigerant flow path 34f. The temperature of the wafer W is controlled by supplying the coolant to the coolant channel 34f.
  • the lower electrode 34 is provided on the insulating member 35.
  • the insulating member 35 is made of an insulator such as quartz or alumina, and has a substantially disk shape opened at the center.
  • the insulating member 35 has a first portion 35a and a second portion 35b.
  • the first portion 35a is a central portion of the insulating member 35, and the second portion 35b extends farther from the second axis AX2 than the first portion 35a, that is, extends outside the first portion 35a.
  • the upper surface of the first portion 35a extends below the upper surface of the second portion 35b, and the lower surface of the first portion 35a also extends below the lower surface of the second portion 35b.
  • the upper surface of the second portion 35 b of the insulating member 35 is in contact with the lower surface of the second portion 34 b of the lower electrode 34.
  • the upper surface of the first portion 35 a of the insulating member 35 is separated from the lower surface of the lower electrode 34.
  • the rotating shaft portion 36 has a substantially cylindrical shape and is coupled to the lower surface of the lower electrode 34. Specifically, it is coupled to the lower surface of the first portion 34 a of the lower electrode 34.
  • the central axis of the rotation shaft portion 36 coincides with the second axis AX2.
  • the holding part 30 constituted by such various elements forms a hollow space as an internal space of the holding structure 18 together with the container part 40.
  • the container part 40 includes an upper container part 42 and an outer container part 44.
  • the upper container part 42 has a substantially disk shape.
  • a through hole through which the rotation shaft portion 36 passes is formed in the center of the upper container portion 42.
  • the upper container portion 42 is provided below the second portion 35b of the insulating member 35 so as to provide a slight gap with respect to the second portion 35b.
  • the upper end of the outer container portion 44 is coupled to the lower surface periphery of the upper container portion 42.
  • the outer container part 44 has a substantially cylindrical shape closed at the lower end.
  • a magnetic fluid seal portion 52 is provided between the container portion 40 and the rotating shaft portion 36.
  • the magnetic fluid seal portion 52 has an inner ring portion 52a and an outer ring portion 52b.
  • the inner ring portion 52 a has a substantially cylindrical shape extending coaxially with the rotation shaft portion 36 and is fixed to the rotation shaft portion 36. Further, the upper end portion of the inner ring portion 52 a is coupled to the lower surface of the first portion 35 a of the insulating member 35.
  • the inner ring portion 52a rotates about the second axis AX2 together with the rotation shaft portion 36.
  • the outer ring portion 52b has a substantially cylindrical shape, and is provided coaxially with the inner ring portion 52a outside the inner ring portion 52a.
  • the upper end portion of the outer ring portion 52 b is coupled to the lower surface of the central side portion of the upper container portion 42.
  • a magnetic fluid 52c is interposed between the inner ring portion 52a and the outer ring portion 52b.
  • a bearing 53 is provided below the magnetic fluid 52c and between the inner ring portion 52a and the outer ring portion 52b.
  • the magnetic fluid seal portion 52 provides a sealing structure that hermetically seals the internal space of the holding structure 18. By this magnetic fluid seal portion 52, the internal space of the holding structure 18 is separated from the space S of the plasma processing apparatus 10. In the plasma processing apparatus 10, the internal space of the holding structure 18 is maintained at atmospheric pressure.
  • a first member 37 and a second member 38 are provided between the magnetic fluid seal portion 52 and the rotating shaft portion 36.
  • the first member 37 extends along a part of the outer peripheral surface of the rotating shaft portion 36, that is, the outer peripheral surface of the upper portion of the third cylindrical portion 36d described later and the outer peripheral surface of the first portion 34a of the lower electrode 34. It has a substantially cylindrical shape. Further, the upper end of the first member 37 has an annular plate shape extending along the lower surface of the second portion 34 b of the lower electrode 34. The first member 37 is in contact with the outer peripheral surface of the upper portion of the third cylindrical portion 36d, and the outer peripheral surface of the first portion 34a and the lower surface of the second portion 34b of the lower electrode 34.
  • the second member 38 has a substantially cylindrical shape extending along the outer peripheral surface of the rotation shaft portion 36, that is, the outer peripheral surface of the third cylindrical portion 36 d and the outer peripheral surface of the first member 37.
  • the upper end of the second member 38 has an annular plate shape that extends along the upper surface of the first portion 35 a of the insulating member 35.
  • the second member 38 includes an outer peripheral surface of the third cylindrical portion 36d, an outer peripheral surface of the first member 37, an upper surface of the first portion 35a of the insulating member 35, and an inner peripheral surface of the inner ring portion 52a of the magnetic fluid seal portion 52.
  • a sealing member 39 a such as an O-ring is interposed between the second member 38 and the upper surface of the first portion 35 a of the insulating member 35. Further, a sealing member 39b such as an O-ring and a sealing member 39c are interposed between the second member 38 and the inner peripheral surface of the inner ring portion 52a of the magnetic fluid seal portion 52. With this structure, the space between the rotating shaft portion 36 and the inner ring portion 52a of the magnetic fluid seal portion 52 is sealed. Thereby, even if a gap exists between the rotating shaft portion 36 and the magnetic fluid seal portion 52, the internal space of the holding structure 18 is separated from the space S of the plasma processing apparatus 10.
  • the inclined shaft portion 50 has a substantially cylindrical shape, and the central axis thereof coincides with the first axis AX1.
  • the inclined shaft portion 50 extends to the outside of the processing container 12 as shown in FIG.
  • the drive device 24 described above is coupled to both outer ends of the inclined shaft portion 50.
  • the driving device 24 pivotally supports both outer end portions of the inclined shaft portion 50.
  • the holding structure 18 rotates about the first axis AX1, and as a result, the holding structure 18 is inclined with respect to the axis PX.
  • the holding structure 18 may be inclined so that the value ⁇ [degree] of the inclination angle AN of the second axis AX2 with respect to the axis PX forms an angle in the range of at least 0 to 60 [degrees].
  • the value ⁇ [degree] of the inclination angle AN of the second axis AX2 is not limited to the range of 0 to 60 [degree], but is in the range of 0 to 360 [degree].
  • the holding structure 18 can be tilted (that is, the holding structure 18 can make one rotation about the first axis AX1).
  • the inclined shaft portion 50 is formed along the axis PX without changing the direction of the inclined shaft portion 50 (first axis AX1) by the connecting portion 12b that can be expanded and contracted in a bellows shape and the driving device 24. Can be translated between the ceiling side and the bottom side. Also by the parallel movement of the inclined shaft portion 50 along the axis PX, the first axis AX1 that is the central axis of the inclined shaft 50 is perpendicular to the axis PX, intersects the axis PX, and is included in the ZX plane. By the parallel movement of the inclined shaft portion 50, the intersection XO between the axis PX, the first axis AX1, and the second axis AX2 moves along the axis PX.
  • the position of the intersection XO between the second axis AX2 and the axis PX can be moved along the axis PX.
  • the distance L between the intersection XO and the horizontal reference plane FA1 is increased or decreased by the parallel movement of the inclined shaft portion 50 (first axis AX1).
  • the first axis AX1 includes the center position of the holding structure 18 in the direction of the second axis AX2.
  • the inclined shaft portion 50 extends on the first axis AX1 passing through the center of the holding structure 18.
  • the first axis AX1 includes a position between the center of the holding structure 18 and the upper surface of the holding unit 30 in the direction of the second axis AX2. That is, in this embodiment, the inclined shaft portion 50 extends at a position that is biased toward the holding portion 30 side with respect to the center of the holding structure 18. According to this embodiment, the distance difference from the plasma source 16 to each position of the wafer W can be reduced when the holding structure 18 is inclined. Therefore, the in-plane uniformity of etching is further improved.
  • the first axis AX1 includes the center of gravity of the holding structure 18.
  • the inclined shaft portion 50 extends on the first axis AX1 including the center of gravity. According to this embodiment, the torque required for the drive device 24 is reduced, and the control of the drive device 24 is facilitated.
  • the rotating shaft part 36 has a columnar part 36a, a first cylindrical part 36b, a second cylindrical part 36c, and a third cylindrical part 36d.
  • the columnar part 36a has a substantially cylindrical shape and extends on the second axis AX2.
  • the columnar part 36 a is a wiring for applying a voltage to the electrode film of the electrostatic chuck 32.
  • the columnar part 36a is connected to the wiring 60 via a rotary connector 54 such as a slip ring.
  • the wiring 60 extends from the internal space of the holding structure 18 to the outside of the processing container 12 through the inner hole of the inclined shaft portion 50.
  • the wiring 60 is connected to a power source 62 (see FIG. 1) via a switch outside the processing container 12.
  • the first cylindrical portion 36b is provided coaxially with the columnar portion 36a outside the columnar portion 36a.
  • the first cylindrical portion 36 b is a wiring for supplying a modulated DC voltage and high frequency bias power to the lower electrode 34.
  • the first tubular portion 36 b is connected to the wiring 64 through the rotary connector 54.
  • the wiring 64 extends from the internal space of the holding structure 18 through the inner hole of the inclined shaft portion 50 to the outside of the processing container 12.
  • the wiring 64 is connected to the first power supply 22 a and the second power supply 22 b of the bias power supply unit 22 outside the processing container 12.
  • a matching device for impedance matching may be provided between the second power supply 22b and the wiring 64.
  • the second cylindrical portion 36c is provided coaxially with the first cylindrical portion 36b outside the first cylindrical portion 36b.
  • a bearing 55 is provided in the rotary connector 54 described above.
  • the bearing 55 extends along the outer peripheral surface of the second cylindrical portion 36c.
  • the bearing 55 supports the rotating shaft portion 36 via the second cylindrical portion 36c.
  • the bearing 53 described above supports the upper portion of the rotating shaft portion 36, whereas the bearing 55 supports the lower portion of the rotating shaft portion 36.
  • the two shafts 53 and 55 support the rotating shaft portion 36 in both the upper portion and the lower portion thereof, so that the rotating shaft portion 36 can be stably rotated about the second axis AX2. Is possible.
  • a gas line for supplying heat transfer gas is formed in the second cylindrical portion 36c.
  • This gas line is connected to the pipe 66 through a rotary joint such as a swivel joint.
  • the piping 66 extends from the internal space of the holding structure 18 through the inner hole of the inclined shaft portion 50 to the outside of the processing container 12.
  • the pipe 66 is connected to a heat transfer gas source 68 (see FIG. 1) outside the processing container 12.
  • the third cylindrical portion 36d is provided coaxially with the second cylindrical portion 36c on the outside of the second cylindrical portion 36c.
  • the third cylindrical portion 36d is formed with a refrigerant supply line for supplying the refrigerant to the refrigerant flow path 34f and a refrigerant recovery line for collecting the refrigerant supplied to the refrigerant flow path 34f.
  • the refrigerant supply line is connected to the pipe 72 via a rotary joint 70 such as a swivel joint.
  • the refrigerant recovery line is connected to the pipe 74 via the rotary joint 70.
  • the pipe 72 and the pipe 74 extend from the internal space of the holding structure 18 to the outside of the processing container 12 through the inner hole of the inclined shaft portion 50.
  • the pipe 72 and the pipe 74 are connected to the chiller unit 76 (see FIG. 1) outside the processing container 12.
  • a rotation motor 78 is provided in the internal space of the holding structure 18.
  • the rotation motor 78 generates a driving force for rotating the rotation shaft portion 36.
  • the rotation motor 78 is provided on the side of the rotation shaft portion 36.
  • the rotary motor 78 is connected to a pulley 80 attached to the rotary shaft portion 36 via a conduction belt 82.
  • the rotational driving force of the rotary motor 78 is transmitted to the rotary shaft portion 36, and the holding portion 30 rotates about the second axis AX2.
  • the rotation speed of the holding unit 30 is, for example, in a range of 50 [rpm] or less.
  • the holding unit 30 is rotated at a rotational speed of 10 [rmp] during the process.
  • the wiring for supplying electric power to the rotary motor 78 is drawn to the outside of the processing container 12 through the inner hole of the inclined shaft portion 50 and connected to a motor power supply provided outside the processing container 12. .
  • the rotation speed [rpm] of the holding unit 30 is assumed to be the same value (for example, 10 [rpm]) unless otherwise specified.
  • the holding structure 18 can be provided with various mechanisms in the internal space that can be maintained at atmospheric pressure.
  • the holding structure 18 has wiring or piping for connecting a mechanism housed in its internal space and devices such as a power source, a gas source, and a chiller unit provided outside the processing container 12 to the outside of the processing container 12. It is configured to be able to be pulled out.
  • a wiring for connecting a heater power source provided outside the processing container 12 and a heater provided on the electrostatic chuck 32 is provided from the internal space of the holding structure 18 to the processing container 12. It may be pulled out through the inner hole of the inclined shaft portion 50 to the outside.
  • the material that is, metal
  • the etching of each layer of the multilayer film shown in FIG. 4 the material (that is, metal) shaved by the etching is not exhausted, but adheres to the surface of the shape formed by the etching, particularly the side surface.
  • the plasma processing apparatus 10 when removing the deposits formed on the side surfaces in this way, the holding structure 18 is tilted and the holding unit 30 holding the wafer W is rotated about the second axis AX2. Can be made. Thereby, ions can be incident on the entire region of the side surface of the shape formed by etching, and the in-plane uniformity of ion incidence on the wafer W can be improved.
  • FIG. 9 is a flowchart illustrating a method for etching a multilayer film according to an embodiment.
  • the method MT shown in FIG. 9 can be performed using the plasma processing apparatus 10 shown in FIG.
  • the method MT is a method of etching a multilayer film of the wafer W that is the object to be processed using the plasma processing apparatus 10. More specifically, in the method MT, each layer in the multilayer film of the wafer W shown in FIG. 4 is etched using ions having energy suitable for the etching.
  • FIGS. 10 to 14 are cross-sectional views showing the state of the object to be processed during or after each step of the method MT.
  • the plasma processing apparatus 10 is used for performing the method MT.
  • any plasma processing apparatus can be used as long as it can tilt the holding structure and rotate the holding unit that holds the wafer W, and can apply a modulated DC voltage to the holding structure from the bias power supply unit.
  • a plasma processing apparatus can be used to perform the method MT.
  • step ST1 the wafer W shown in FIG. 4 is prepared and accommodated in the processing container 12 of the plasma processing apparatus 10. Then, the wafer W is held by the electrostatic chuck 32 of the holding unit 30.
  • the upper magnetic layer L4 is etched.
  • a rare gas and a hydrogen-containing gas are supplied into the processing container 12.
  • the noble gas is a noble gas having an atomic number greater than that of argon, for example, Kr gas.
  • the hydrogen-containing gas is, for example, CH 4 gas or NH 3 gas.
  • step ST2 the pressure in the space S in the processing container 12 is reduced to a predetermined pressure by the exhaust system 20.
  • the pressure in the space S in the processing container 12 is set to a pressure within the range of 0.4 [mTorr] (0.5 [Pa]) to 20 [mTorr] (2.666 [Pa]).
  • the rare gas and the hydrogen-containing gas are excited by the plasma source 16.
  • the high frequency power supply 150A and the high frequency power supply 150B of the plasma source 16 are supplied to the inner antenna element 142A and the outer antenna element 142B, for example, at a frequency of 27.12 [MHz] or 40.68 [MHz] and 10 to 3000 [ W] is supplied with high-frequency power having a power value within a range of W].
  • a modulated DC voltage is applied to the holding structure 18 (lower electrode 34).
  • the voltage value of the DC voltage is set to a relatively low voltage value in order to suppress etching of the mask MSK and the insulating layer L3.
  • the voltage value of the DC voltage is set to a voltage value of 300 [V] or less, for example, 200 [V].
  • the modulation frequency of the DC voltage is set to 400 [kHz], for example.
  • the on-duty ratio of pulse modulation of the DC voltage is set to a ratio in the range of 10 to 90%.
  • step ST2 ions generated under the above-described conditions are accelerated by the sheath generated by the modulated DC voltage and enter the upper magnetic layer L4.
  • This ion energy etches the upper magnetic layer L4 made of Co and Fe, but does not substantially etch the mask MSK made of Ta and TiN and the insulating layer L3 made of MgO. Therefore, in step ST2, the upper magnetic layer L4 can be selectively etched with respect to the mask MSK and the insulating layer L3.
  • the active species of hydrogen derived from the hydrogen-containing gas reforms the surface of the upper magnetic layer L4. Thereby, the etching of the upper magnetic layer L4 is promoted.
  • a metal compound is formed by a reaction between nitrogen or carbon in the hydrogen-containing gas and the mask MSK. As a result, the mask MSK becomes strong and etching of the mask MSK is suppressed.
  • the upper magnetic layer L4 is etched as shown in FIG. 10A.
  • the constituent materials of the upper magnetic layer L4, for example, Co and Fe are not exhausted and the wafer W is not exhausted. Can adhere to the surface.
  • the constituent material adheres to, for example, the side surface of the mask MSK, the side surface of the upper magnetic layer L4, and the upper surface of the insulating layer L3.
  • a deposit DP1 is formed as shown in FIG.
  • step ST2 the rotation process of the holding structure 18 described later is also performed within the period in which the upper magnetic layer L4 is etched under the above conditions. Also in the following step ST5, step ST7, and step ST92, similarly to the case of step ST2, the rotation processing of the holding structure 18 described later is also performed during the etching period of each step. The rotation process of the holding structure 18 will be described in detail later.
  • step ST3 the deposit DP1 is removed.
  • the conditions in step ST3 may be the same as the conditions in step ST2. That is, in step ST3, a rare gas having an atomic number larger than the atomic number of argon, such as Kr gas, and a hydrogen-containing gas are supplied into the processing container 12. Further, rare gas and hydrogen gas are excited by the plasma source 16.
  • a modulated DC voltage is applied to the holding structure 18 (lower electrode 34). Therefore, as shown in FIG. 10B, the deposit DP1 is removed in the entire region on the side surface of the upper magnetic layer L4 and the entire region on the side surface of the mask MSK.
  • active species of hydrogen derived from the hydrogen-containing gas reform the deposit DP1. Thereby, the removal of the deposit DP1 is promoted.
  • process ST2 and process ST3 may be performed several times alternately. Thereby, before the deposit DP1 is formed in a large amount, the upper magnetic layer L4 can be etched while removing the deposit DP1.
  • the insulating film IL is formed.
  • the insulating film IL is formed to prevent conduction between the lower magnetic layer L2 and the upper magnetic layer L4.
  • the wafer W is transferred to the film forming apparatus, and the insulating film IL is formed on the surface of the wafer W in the film forming apparatus as shown in FIG.
  • the insulating film IL can be made of, for example, silicon nitride or silicon oxide.
  • the insulating film IL is etched in a region along the upper surface of the mask MSK and a region along the upper surface of the insulating layer L3. Any plasma processing apparatus can be used for this etching.
  • the plasma processing apparatus 10 can be used for the etching.
  • a hydrofluorocarbon gas or a processing gas containing a fluorocarbon gas can be used.
  • the insulating film IL is left along the side surface of the mask MSK and the side surface of the upper magnetic layer L4.
  • the insulating layer L3 is etched.
  • a rare gas and a hydrogen-containing gas are supplied into the processing container 12.
  • the noble gas is a noble gas having an atomic number larger than that of argon, for example, Kr gas.
  • the hydrogen-containing gas is, for example, CH 4 gas or NH 3 gas.
  • the pressure in the space S in the processing container 12 is reduced to a predetermined pressure by the exhaust system 20.
  • the pressure in the space S in the processing container 12 is set to a pressure within the range of 0.4 [mTorr] (0.5 [Pa]) to 20 [mTorr] (2.666 [Pa]).
  • the rare gas and the hydrogen-containing gas are excited by the plasma source 16.
  • the high frequency power supply 150A and the high frequency power supply 150B of the plasma source 16 are supplied to the inner antenna element 142A and the outer antenna element 142B, for example, at a frequency of 27.12 [MHz] or 40.68 [MHz] and 10 to 3000 [ W] is supplied with high-frequency power having a power value within a range of W].
  • step ST5 the modulated DC voltage having a voltage value higher than the modulated DC voltage applied to the holding structure 18 (lower electrode 34) in step ST2 or the high frequency bias power is applied to the holding structure (lower electrode 34).
  • the on-duty ratio and modulation frequency of pulse modulation of the modulated DC voltage may be the same as the on-duty ratio and modulation frequency of pulse modulation of DC voltage in step ST2.
  • the voltage value of the DC voltage is set to a voltage value larger than 300 [V].
  • the high frequency bias power can be set to 100 to 1500 [W], and the frequency can be set to 400 [kHz].
  • step ST5 ions generated under the above-described conditions are incident on the insulating layer L3.
  • This ion may have energy capable of etching the insulating layer L3.
  • the constituent material of the insulating layer L3 is reduced by the active species of hydrogen derived from the hydrogen-containing gas used in step ST5. For example, MgO is reduced.
  • the insulating layer L3 is modified so as to obtain a high sputter yield SY.
  • the etching rate [ ⁇ m / min] of the insulating layer L3 is increased.
  • the insulating layer L3 is etched as shown in FIG.
  • the constituent material of the insulating layer L3 can adhere to the surface of the wafer W without being exhausted.
  • the constituent material adheres to the side surface of the mask MSK, the side surface of the upper magnetic layer L4, the side surface of the insulating layer L3, and the surface of the lower magnetic layer L2.
  • the deposit DP2 is formed.
  • step ST6 the deposit DP2 is removed.
  • the conditions in step ST6 are the same as the conditions in step ST5. According to this process ST6, since ions can be efficiently incident on the deposit DP2, the deposit DP2 can be removed as shown in FIG. 12B. Further, by using the hydrogen-containing gas, it is possible to modify the deposit DP2 and promote the removal of the deposit DP2.
  • process ST5 and the process ST6 may be alternately executed a plurality of times. Thereby, before the deposit DP2 is formed in a large amount, the insulating layer L3 can be etched while removing the deposit DP2.
  • the lower magnetic layer L2 is etched as shown in FIG. 13A, and in the subsequent step ST8, the deposit DP3 generated by the etching in the step ST6 is as shown in FIG. 13B. To be removed. Since the lower magnetic layer L2 is made of the same material as that of the upper magnetic layer L4, in one embodiment, the condition of step ST7 may be the same as that of step ST2. Moreover, the conditions of process ST8 may be the same conditions as process ST3. Further, the process ST7 and the process ST8 may be executed alternately a plurality of times.
  • step ST7 and step ST8 plasma of a rare gas (for example, Kr gas) and a hydrogen-containing gas is generated, and a modulated DC voltage is applied to the lower electrode 34 of the holding structure 18.
  • the voltage value of the modulated DC voltage is 300 [V] or less, for example, 200 [V].
  • the conditions of process ST7 may be the same as that of process ST5, and the conditions of process ST8 may be the same as process ST6. That is, in both step ST7 and step ST8, plasma of a rare gas (for example, Kr gas) and a hydrogen-containing gas is generated, and a relatively high voltage value, for example, 300 [V] is applied to the lower electrode 34 of the holding structure 18. A higher modulation DC voltage or higher frequency bias power is supplied.
  • the holding structure 18 is set in an inclined state, and the holding unit 30 is rotated. Note that the holding structure 18 may be set in an inclined state and the holding unit 30 may be rotated during a part of the entire period of the process ST7.
  • the insulating layer L3 and the lower magnetic layer L2 can be etched together under the same conditions.
  • the base layer L1 is etched.
  • the nonmagnetic layer L14 of the underlayer L1 to the antiferromagnetic layer L12 are etched to the surface (upper surface) of the lower electrode layer L11.
  • FIG. 15 is a flowchart showing an embodiment of the process ST9.
  • step ST9 of one embodiment first, plasma is generated in the processing container 12 in step ST91.
  • the conditions for generating plasma in step ST91 are the same as those in step ST5. That is, in this embodiment, the antiferromagnetic layer L12 can be etched collectively from the insulating layer L3, the lower magnetic layer L2, and the nonmagnetic layer L14 using the conditions of step ST5.
  • steps ST92 and ST93 are performed while maintaining the plasma generation conditions set in step ST91.
  • step ST92 as shown in part (a) of FIG. 14, each layer of the foundation layer L1 from the nonmagnetic layer L14 to the antiferromagnetic layer L12 is etched,
  • the generated deposit DP4 is removed in step ST93.
  • the deposit adhered to the side surface of the shape formed by etching on the wafer W is removed from the entire region of the side surface of the shape and also removed in the plane of the wafer W.
  • FIG. 16 is a diagram showing another embodiment of the process ST9.
  • Process ST9 shown in FIG. 16 includes process ST95 and process ST96.
  • step ST95 plasma of a processing gas containing a first rare gas having an atomic number larger than that of argon is generated.
  • the first noble gas is, for example, Kr gas.
  • step ST96 plasma of a processing gas containing a second rare gas having an atomic number smaller than the atomic number of argon is generated.
  • the second rare gas is, for example, Ne gas.
  • high-frequency bias power can be supplied to the holding structure 18 (lower electrode 34) in both step ST95 and step ST96.
  • the rotation process of the holding structure 18 is a process (etching process) in which an etching process is performed in the method MT, and is performed at least in the processes ST2, ST5, ST7 shown in FIG. 9 and the process ST92 shown in FIG.
  • etching steps ST2, ST5, ST7, and ST92 is a step of etching the wafer W with plasma generated in the processing container 12, and the holding structure 18 holding the wafer W is held during the execution of the etching. This is a step of performing a tilting and rotating process.
  • the rotation process performed in each etching step can include one or a plurality of inclined rotation states RT ( ⁇ , t) in order to realize sufficiently uniform etching on the surface FS of the wafer W. That is, each rotation process sequentially realizes a plurality of inclined rotation states RT ( ⁇ , t) with respect to the holding structure 18 holding the wafer W.
  • ⁇ is the value [degree] of the inclination angle AN
  • t is the processing time [min].
  • the second axis AX2 that is the central axis of the wafer W is tilted with respect to the axis PX of the processing vessel 12 that is in the same plane (YZ plane) as the second axis AX2.
  • the wafer W is rotated around the second axis AX2 for a predetermined processing time t.
  • the holding structure 18 is inclined about the first axis AX1 by the inclination angle AN (value ⁇ [degrees]) of the second axis AX2, and this holding structure is further provided.
  • the holding portion 30 of the holding structure 18 is rotated about the second axis AX2 by t [min] while maintaining the inclination of the body 18 (the value ⁇ [degree] of the inclination angle AN of the second axis AX2). State.
  • the tilt rotation state RT ( ⁇ , t) is specified by ⁇ [degree] and t [min].
  • one rotation process consists of a plurality of tilt rotation states RT ( ⁇ i , t i ) (i is an identifier for identifying each tilt rotation state, and is in the range of 1 to N (N is a natural number)
  • the plurality of inclined rotation states RT ( ⁇ i , t i ) are sequentially realized in a predetermined order. That is, in one rotation process, a plurality of inclined rotation states RT ( ⁇ 1 , t 1 ),..., And inclined rotation states RT ( ⁇ N , t N ) are successively realized.
  • a plurality of tilt rotation states RT ( ⁇ , t) combinations of the value ⁇ of the tilt angle AN and the processing time t are different from each other.
  • a second axis AX2 that is the central axis of the wafer W passes through the center CE of the surface FS shown in FIG. 19, and the direction UA is an orientation in which the second axis AX2 is inclined with respect to the axis PX when viewed from the surface FS. It passes through the center CE of the surface FS, is in the YZ plane, and coincides with the radial direction (the radial direction) of the surface FS.
  • a plurality of curves PL shown in FIG. 19 indicate contour lines of the etching rate [ ⁇ m / min].
  • the etching rate [ ⁇ m / min] shown in FIG. 19 increases in the direction DL.
  • the holding structure 18 is not inclined (that is, the second axis AX2 is overlapped with the axis PX, and the value ⁇ of the inclination angle AN of the second axis AX2).
  • the contour line of the etching rate [ ⁇ m / min] with respect to the surface FS of the wafer W at 0 [degree] is shown.
  • the axis PX of the processing container 12 overlaps the second axis AX2 that is the center axis of the wafer W, and is perpendicular to the surface FS of the wafer W.
  • the etching rate [ ⁇ m / ⁇ m for the surface FS of the wafer W when the holding structure 18 is inclined and the value of the inclination angle AN of the second axis AX2 is ⁇ 20 [degrees].
  • Min] contour lines are shown. In this case, the axis PX is moved along the direction UA in the direction opposite to the direction UA (the direction opposite to the inclination direction of the holding structure 18).
  • the etching rate with respect to the surface FS of the wafer W when the holding structure 18 is inclined and the inclination angle AN of the second axis AX2 is 45 [degrees] [ ⁇ m / Min] contour lines are shown.
  • the axis line PX is in the direction opposite to the direction UA (the direction opposite to the inclination direction of the holding structure 18) along the direction UA, compared to the state shown in FIG. It is moved further.
  • Min] contour lines are shown.
  • the axis line PX is in the direction opposite to the direction UA (the direction opposite to the inclination direction of the holding structure 18) along the direction UA, compared to the state shown in part (c) of FIG. It is moved further.
  • the value ⁇ of the inclination angle AN of the second axis AX2 with respect to the axis PX is not limited to 60 [degrees] as long as it is within the range of 0 to 360 [degrees].
  • FIG. 20 shows the contour line of the etching rate [ ⁇ m / min] shown in FIG. 19 along the vertical reference plane FA2 (YZ plane).
  • FIG. 20 is a diagram illustrating the distribution of the etching rate [ ⁇ m / min] illustrated in FIG. 19 along the radial direction (direction UA) of the surface FS of the wafer W.
  • the horizontal axis in FIG. 20 represents the radial direction (direction UA) of the surface FS, and the vertical axis in FIG. 20 represents the etching rate [ ⁇ m / min].
  • the curve PM1 shown in FIG. 20 corresponds to the etching rate [ ⁇ m / min] shown in FIG. 19A, and the curve PM2 shown in FIG.
  • FIG. 20 shows the etching rate [ ⁇ m / min] shown in FIG. 19B.
  • the curve PM3 shown in FIG. 20 corresponds to the etching rate [ ⁇ m / min] shown in FIG. 19C
  • the curve PM4 shown in FIG. 20 shows the etching rate shown in FIG. ⁇ m / min].
  • the etching rate [ ⁇ m / min] with respect to the surface FS of the wafer W when the holding structure 18 is not inclined is the second axis AX2 (the center axis of the wafer W).
  • the distribution is substantially axisymmetric with respect to the axis PX).
  • the etching rate [ ⁇ m / min] with respect to the surface FS is the highest at the position of the second axis AX2 (axis PX) that is the central axis of the wafer W, and decreases almost symmetrically toward the edge of the wafer W. It can be seen that the distribution is as follows. Then, when the wafer W is inclined as shown in FIGS.
  • the etching rate [ The contour line near the maximum value of ⁇ m / min] is displaced on the surface FS from the position of the second axis AX2, which is the central axis of the wafer W, in the direction opposite to the direction of the inclination (Y direction), and the etching rate [ [mu] m / min] (and the interval between the contour lines) disappears.
  • the inventor From the configuration of the processing container 12 described above, the inventor has found that the distribution of the etching rate [ ⁇ m / min] in the processing container 12 is substantially axisymmetric about the axis PX, and the ceiling side of the processing container 12 It was confirmed that the etching rate [ ⁇ m / min] decreased with increasing distance from the (plasma source 16 side).
  • etching rate function PER1 (x, y, z; ⁇ ; CON) ( ⁇ / ⁇ (x ⁇ ) 2 + (y ⁇ ) 2 + (z ⁇ ) 2 ⁇ ⁇ / 2 numerical value) (Equation 1).
  • the predicted distribution of the etching rate [ ⁇ m / min] with respect to the surface FS of the wafer W is a function of the coordinates (x, y, z) of the points in the processing container 12, and the parameters ⁇ , ⁇ , ⁇ , ⁇ , This corresponds to the numerical value of ⁇ / ⁇ (x ⁇ ) 2 + (y ⁇ ) 2 + (z ⁇ ) 2 ⁇ ⁇ / 2 including ⁇ .
  • PER1 (x, y, z; ⁇ ; CON) is an example of a plurality of predicted distributions of the etching rate [ ⁇ m / min] with respect to the surface FS of the wafer W, and the following etching rate function PER2 ( ⁇ , r, ⁇ ) The same applies to CON).
  • a plurality of predicted distributions such as PER1 (x, y, z; ⁇ ; CON) are acquired in advance before the method MT is performed.
  • the etching rate [ ⁇ m / min] obtained by each of the plurality of inclined rotation states RT ( ⁇ i , t i ) realized in the rotation process of each process has a plurality of predicted distributions (PER1 (x, y, z; ⁇ ; CON), etc.).
  • Each of x, y, z of PER1 (x, y, z; ⁇ ; CON) is an X-axis coordinate value (value in [mm] units) and a Y-axis coordinate value (value in [mm] units).
  • ⁇ 1, ⁇ , and ⁇ of PER1 (x, y, z; ⁇ ; CON) are X-axis coordinate values ([mm]).
  • ⁇ of PER1 (x, y, z; ⁇ ; CON) is a dimension value of [ ⁇ m / min] and a value of an etching rate [ ⁇ m / min]. Since the point ( ⁇ , ⁇ , ⁇ ) is regarded as a predetermined reference point on the plasma source side of the plasma processing apparatus 10, this ⁇ is a length from the reference point to the point (x, y, z). Is the etching rate [ ⁇ m / min] at the point (x, y, z) in the processing container 12 when the length is a unit length. ⁇ is a value having no unit (dimension).
  • the etching condition CON can be specified by various parameters that realize the etching process, such as a gas type used for etching and a material of a film on the surface of the wafer W to be etched.
  • the etching condition CON may be different in each of the steps ST2, ST5, ST7, ST92.
  • the predicted distribution of PER1 (x, y, z; ⁇ ; CON) or the like varies depending on the combination of the value ⁇ [degree] of the inclination angle AN and the etching condition CON performed in the processing vessel 12.
  • FIG. 17 is a diagram illustrating the surface FS of the wafer W according to an embodiment in polar coordinates.
  • r is a moving radius [mm] from the center CE of the surface FS
  • ⁇ is a declination [degree] from the vertical reference plane FA2.
  • the center CE of the surface FS is on the second axis AX2, and is on the vertical reference plane FA2.
  • PER2 ( ⁇ , r, ⁇ ; CON) includes the same parameters ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ as PER1 (x, y, z; ⁇ ; CON).
  • the distribution of the etching rate [ ⁇ m / min] with respect to the surface FS is not axially symmetric with respect to the central axis (second axis AX2) of the wafer W.
  • the non-uniformity can be satisfactorily eliminated by achieving a uniform etching rate [ ⁇ m / min] by an integration effect due to the rotation of the surface FS in the direction of the deflection angle ⁇ . Therefore, assuming rotation of the wafer W about the second axis AX2, PER2 ( ⁇ , r, ⁇ ; CON) is integrated by ⁇ (the integration range is 0 to 360 [degrees]), and the function FA ( ⁇ , r CON).
  • FA ( ⁇ , r; CON) is the result of integrating PER2 ( ⁇ , r, ⁇ ; CON) with ⁇ (the integration range is 0 to 360 [degrees]).
  • FIG. 18 is a diagram illustrating an example of an etching rate function according to an embodiment.
  • the horizontal axis in FIG. 18 represents the moving radius r [mm]
  • the vertical axis in FIG. 18 represents the value ⁇ [degree] of the inclination angle AN of the second axis AX2.
  • a plurality of curves shown in FIG. 18 are contour lines of the etching rate [ ⁇ m / min].
  • the curve CA1 is a contour line with an etching rate of 41 [ ⁇ m / min]
  • the curve CA2 is a contour line with an etching rate of 40 [ ⁇ m / min].
  • the etching rate [ ⁇ m / min] is substantially uniform in the r direction.
  • the rotation processing performed in each step of the etching process comprises a plurality of inclined rotation state RT ( ⁇ i, t i) , the plurality of ⁇ i m ( ⁇ i) ⁇
  • the sum KA (r; CON) of FA ( ⁇ i , r; CON) is calculated, and the variation of KA (r; CON) in the r direction is as small as possible (or less than or equal to a predetermined reference).
  • i and m ( ⁇ i ) are specified.
  • the processing time t i [min] of each of the plurality of tilt rotation states RT ( ⁇ i , t i ) is weighted to the prediction distribution (PER2 ( ⁇ , r, ⁇ ; CON), etc.) (m ( ⁇ i )).
  • ⁇ i and m ( ⁇ i ) used in the rotation process of each process of the etching process are specified.
  • An etching condition CON that is the same as the etching condition CON of the etching performed in each step of the etching process from among a plurality of predicted distributions (FA ( ⁇ i , r; CON), etc.) acquired in advance before the execution of the method MT.
  • a plurality of prediction distributions (FA ( ⁇ i , r; CON), etc.) and a weight of each of the plurality of prediction distributions are specified, and the slopes of the specified plurality of prediction distributions (FA ( ⁇ i , r; CON), etc.) are identified
  • a plurality of tilt rotation states RT ( ⁇ i , t i ) realized by the rotation process of each step such as the step ST2 are specified using the value ⁇ i [degree] of the angle AN and the weight (m ( ⁇ i )).
  • the specified plurality of tilt rotation states RT ( ⁇ i , t i ) are realized.
  • the synthesis of the two inclined rotation states RT ( ⁇ i , t i ) will be examined with reference to the results of measurement MK1 to measurement MK3 in which the etching rate [ ⁇ m / min] was actually measured.
  • the same etching condition CON is used, and the etching condition CON includes an element that etching is performed using Ar plasma.
  • the average value [ ⁇ m / min], standard deviation [ ⁇ m / min], fluctuation value [ ⁇ m / min], and fluctuation value / average value ⁇ 100 [%] of the etching rate are calculated. did.
  • the average value [ ⁇ m / min], standard deviation [ ⁇ m / min], variation value [ ⁇ m / min], and variation value / average value ⁇ 100 [%] are the etching rate [ ⁇ m at each point of the surface FS, respectively.
  • / Min] is a statistical value obtained from the measured value.
  • the fluctuation value [ ⁇ m / min] is a value obtained by subtracting the minimum value of the measured value from the maximum value of the measured value of the etching rate [ ⁇ m / min].
  • the sum K (r; CON) of the plurality of m ( ⁇ i ) ⁇ FA ( ⁇ i , r; CON) described above is actually continuously generated in the plurality of inclined rotation states RT ( ⁇ i , t i ). It can be seen that the etching rate [ ⁇ m / min] obtained by actualization can be suitably associated with the actual measurement value.
  • ⁇ i and m ( ⁇ i ) are considered as an example, but the method is not limited to this. That is, one or a plurality of ⁇ i in which the variation ⁇ r of FA ( ⁇ , r; CON) with respect to r is equal to or less than a predetermined reference is specified in advance.
  • the variation ⁇ r can be, for example, a value obtained by subtracting the minimum value from the maximum value of FA ( ⁇ , r; CON) in the r direction (radial radius direction).
  • the content of the tilt rotation state RT ( ⁇ i , t i ) is specified. Further, a method for specifying the parameters ⁇ , ⁇ , ⁇ , ⁇ , ⁇ used in the above equation 1 will be described.
  • the parameters ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ are specified by the actually measured values of the etching rate [ ⁇ m / min] by the etching performed under the same etching condition CON as the etching condition CON in each etching process.
  • the combination of the parameters ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ differs for each etching condition CON and for each value ⁇ [degree] of the inclination angle AN of the second axis AX2.
  • the values of the parameters ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ are determined for each value ⁇ [degree] of the inclination angle AN that is used when the actual measurement value that specifies the parameter is obtained.
  • PER1 (x, y, z; ⁇ ; CON) ( ⁇ / ⁇ (x ⁇ ) 2 + (y ⁇ ) 2 + (z ⁇ ) 2 ⁇ ⁇ / 2 numerical value)
  • the etching condition CON and the value ⁇ [degree] of the inclination angle AN of the second axis AX2 are reflected in the respective values of ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ .
  • the value ⁇ [degree] of the inclination angle AN of the second axis AX2 under predetermined etching conditions using the plasma processing apparatus 10 (for example, the etching conditions in step ST2 and the like) in advance.
  • the etching rate [ ⁇ m / min] in the processing chamber 12 with respect to the wafer W is measured in each of at least three states (0, 30, 60 [degrees], etc.), and the plasma processing apparatus 10 is based on the measurement result.
  • x k , y k , and z k are the coordinates of the point in the processing container 12 where the etching rate [ ⁇ m / min] is actually measured as described above, and each of x k , y k , and z k is These are the X-axis coordinate value (unit value in [mm]), the Y-axis coordinate value (value in [mm] unit), and the Z-axis coordinate value (value in [mm] unit).
  • the number M of actually measured values ER (x k , y k , z k ; ⁇ ) [ ⁇ m / min] of the etching rate [ ⁇ m / min] is the value ⁇ [degree of the inclination angle AN of the second axis AX2 used for the actual measurement. ], Which is the number necessary to specify the parameters ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ with sufficient accuracy.
  • Parameters ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ are specified from these M equations for each value ⁇ [degree] of the inclination angle AN of the second axis AX2 used for the actual measurement.
  • the parameters ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ described above may be specified directly using PER2 ( ⁇ , r, ⁇ ; CON) instead of PER1 (x, y, z; CON). it can.
  • the value was used as a calculation target (comparison target) of average error [ ⁇ m / min].
  • the etching condition CON used in each of measurement ME1 to measurement ME6 and the value ⁇ [degree] of the inclination angle AN of the second axis AX2 are the etching rates [ ⁇ m / min] obtained in each of measurement ME1 to measurement ME6.
  • the average error [ ⁇ m / min] of the etching rate obtained in each of measurement ME1 to measurement ME6 is shown below.
  • the average error [ ⁇ m / min] is the etching rate at all measurement points P j (j is a code for identifying the measurement point) at which the etching rate [ ⁇ m / min] was actually measured on the surface FS.
  • P j j is a code for identifying the measurement point
  • the etching condition CON includes an element that is etching using Ar plasma and the etching target is an O x blanket wafer.
  • ⁇ , ⁇ , ⁇ , ⁇ , ⁇ 0 [mm]
  • ⁇ 0 [mm]
  • ⁇ 400.8 [mm]
  • ⁇ 8.98 ⁇ 10 9 [ ⁇ m / min]
  • ⁇ 3.21.
  • the average error [ ⁇ m / min] of the etching rate was 0.279 [ ⁇ m / min].
  • the etching condition CON includes an element that etching is performed using Ar plasma and an etching target is an Ox blanket wafer.
  • ⁇ , ⁇ , ⁇ , ⁇ , ⁇ 0 [mm]
  • ⁇ ⁇ 106.8 [mm]
  • ⁇ 416.1 [mm]
  • ⁇ 8.98 ⁇ 10 9 [ ⁇ m / min]
  • ⁇ 3.21.
  • the average error [ ⁇ m / min] of the etching rate was 0.480 [ ⁇ m / min].
  • the etching condition CON includes an element that etching is performed using Ar plasma and an etching target is an Ox blanket wafer.
  • ⁇ , ⁇ , ⁇ , ⁇ , ⁇ 0 [mm]
  • ⁇ -197.2 [mm]
  • ⁇ 405.5 [mm]
  • ⁇ 8.98 ⁇ 10 9 [ ⁇ m / min]
  • ⁇ 3.21.
  • the average error [ ⁇ m / min] of the etching rate was 0.725 [ ⁇ m / min].
  • the etching condition CON includes an element that is etching using O 2 plasma and the etching target is a KrF blanket wafer.
  • ⁇ , ⁇ , ⁇ , ⁇ , ⁇ 0 [mm]
  • ⁇ 0 [mm]
  • ⁇ 379.4 [mm]
  • ⁇ 2.46 ⁇ 10 8 [ ⁇ m / min]
  • ⁇ 2.31.
  • the average error [ ⁇ m / min] of the etching rate was 2.48 [ ⁇ m / min].
  • the etching condition CON includes an element that is etching using O 2 plasma and the etching target is a KrF blanket wafer.
  • ⁇ , ⁇ , ⁇ , ⁇ , ⁇ 0 [mm]
  • ⁇ ⁇ 71.0 [mm]
  • ⁇ 383.5 [mm]
  • ⁇ 2.46 ⁇ 10 8 [ ⁇ m / min]
  • ⁇ 2.31.
  • the average error [ ⁇ m / min] of the etching rate was 1.70 [ ⁇ m / min].
  • the etching condition CON includes an element that is etching using O 2 plasma and the etching target is a KrF blanket wafer.
  • ⁇ , ⁇ , ⁇ , ⁇ , ⁇ 0 [mm]
  • ⁇ ⁇ 133.0 [mm]
  • ⁇ 390.6 [mm]
  • ⁇ 2.46 ⁇ 10 8 [ ⁇ m / min]
  • ⁇ 2.31.
  • the average error [ ⁇ m / min] of the etching rate was 3.61 [ ⁇ m / min].
  • a plurality of tilt rotation states RT ( ⁇ i , t i ) having different values of the tilt angle AN of the wafer W ⁇ [degree] and the processing time t [min] are different during the etching. Since this can be realized in combination, the uniformity of the etching rate with respect to the wafer W can be sufficiently improved by adjusting the combination.
  • the etching rate distribution is an axially symmetric distribution around the axis PX of the processing chamber 12 in a state where the second axis AX 2 that is the central axis of the wafer W is not inclined.
  • the center of the etching rate distribution is moved on the surface FS of the wafer W to cancel the axial symmetry, and the etching rate distribution It is possible to adjust accurately including the interval between contour lines.
  • the tilt for each tilt rotation state RT ( ⁇ i , t i ).
  • the value ⁇ i [degree] of the angle AN and the processing time t i can be specified with high accuracy.
  • the values of the parameters ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ included in the etching rate prediction distribution are determined for each value corresponding to the value ⁇ [degree] of the inclination angle AN, if the prediction distribution is specified, It becomes easy to specify the value ⁇ [degree] of the inclination angle AN that realizes the etching rate corresponding to the predicted distribution.
  • ⁇ [degree] of the inclination angle AN a prediction distribution corresponding to the position of the intersection XO between the second axis AX2 that is the central axis of the wafer W and the axis PX of the processing chamber 12 is used. Therefore, it is possible to specify in more detail the preferable value ⁇ i [degree] of the inclination angle AN and the processing time t i used in the etching process such as the process ST2.
  • Modification 1 For example, when the inclined shaft portion 50 (first axis AX1) is moved along the axis PX (in other words, the second axis AX2 (center axis of the wafer W) and the axis PX (processing vessel 12).
  • the predicted distribution of the etching rate [ ⁇ m / min] such as PER1 (x, y, z; ⁇ ; CON) is In addition to the value ⁇ [degree] of the inclination angle AN and the etching condition CON of the etching performed in the processing vessel 12, the position on the axis PX of the intersection XO between the first axis AX1 and the axis PX (specifically, For example, it depends on the combination of the distance L) between the intersection XO and the horizontal reference plane FA1.
  • the values of the parameters ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ are the states when the actual measurement value used for specifying the parameter is obtained, specifically, the value ⁇ [degree] of the inclination angle AN. And for each value (for example, the distance L) according to the position of the intersection XO on the axis PX.
  • FIG. 21 An example of FA ( ⁇ , r; CON) in the case of Modification 1 is shown in (a) part, (b) part, (c) part, and (d) part of FIG. Parts (a) to (d) of FIG. 21 are diagrams illustrating an example of an etching rate function (FA ( ⁇ , r; CON)) according to Modification 1 of the embodiment.
  • Each of the horizontal axes of the portions (a) to (d) in FIG. 21 represents a moving radius r [mm] (where r is a moving radius from the center CE of the surface FS of the wafer W), and FIG.
  • the vertical axis of each of the parts (d) to (d) represents the value ⁇ [degree] of the inclination angle AN of the second axis AX2.
  • a plurality of curves shown in each of the parts (a) to (d) of FIG. 21 are contour lines (corresponding to FA ( ⁇ , r; CON) of the etching rate [ ⁇ m / min], and so on). is there.
  • the distance from the surface of the dielectric plate 194 is a predetermined reference position (the distance when the result shown in FIG. 18 is obtained (the distance from the upper surface 32a of the electrostatic chuck 32 to the surface of the dielectric plate 194)) The same applies hereinafter.) To -50 [mm], which is a contour line of the etching rate [ ⁇ m / min] obtained by the configuration of Modification 1. In part (b) of FIG.
  • the distance from the upper surface 32a of the electrostatic chuck 32 to the surface of the dielectric plate 194 is ⁇ 20 [mm] from the reference position when the second axis AX2 coincides with the axis PX.
  • the contours of the etching rate [ ⁇ m / min] obtained by the configuration of Modification 1 are shown.
  • FIG. 21C in the state where the second axis AX2 coincides with the axis PX, the distance from the upper surface 32a of the electrostatic chuck 32 to the surface of the dielectric plate 194 is +20 [mm] from the reference position.
  • the contours of the etching rate [ ⁇ m / min] obtained by the configuration of Modification 1 are shown.
  • FIG. 21C in the state where the second axis AX2 coincides with the axis PX, the distance from the upper surface 32a of the electrostatic chuck 32 to the surface of the dielectric plate 194 is +20 [mm] from the reference position.
  • the first axis AX1 (the central axis of the inclined shaft part 50) is the axis PX (the reference axis of the processing container 12).
  • the contour line of the etching rate [ ⁇ m / min] has substantially the same shape as the contour line shown in FIG. 18, but the value of the contour line changes. That is, the etching rate decreases as the distance from the upper surface 32a of the electrostatic chuck 32 to the surface of the dielectric plate 194 is shorter (the electrostatic chuck 32 is closer to the dielectric plate 194) in a state where the second axis AX2 coincides with the axis PX. [ ⁇ m / min] increases. Thus, if the structure of the modification 1 is used, the etching rate [ ⁇ m / min] can be increased without changing the shape of the contour line of the etching rate [ ⁇ m / min].
  • the holding structure 18 may have a configuration in which the electrostatic chuck 32, the lower electrode 34, and the rotating shaft portion 36 are movable along the second axis AX2.
  • the upper surface 32a (surface holding the wafer W) of the electrostatic chuck 32 is moved along the second axis AX2 (center axis of the wafer W) (in other words, the upper surface 32a of the electrostatic chuck 32 and the first surface 32a).
  • an etching rate such as PER1 (x, y, z; ⁇ ; CON) [ ⁇ m / min] has a predicted distribution of the intersection of the upper surface 32a of the electrostatic chuck 32 and the second axis AX2, together with the value ⁇ [degree] of the inclination angle AN and the etching condition CON of the etching performed in the processing chamber 12. It differs depending on the combination with the position on the second axis AX2 of XP.
  • the values of the parameters ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ are the states when the actual measurement value used for specifying the parameter is obtained, specifically, the value ⁇ [degree] of the inclination angle AN. And a value corresponding to the position on the second axis AX2 of the intersection XP between the upper surface 32a of the electrostatic chuck 32 and the second axis AX2.
  • a configuration in which the configuration of Modification 1 and the configuration of Modification 2 are used simultaneously is also possible.
  • FIG. 22 are diagrams illustrating an example of an etching rate function (FA ( ⁇ , r; CON)) according to Modification 2 of the embodiment.
  • Each of the horizontal axes of the portions (a) and (b) in FIG. 22 represents a moving radius r [mm] (where r is a moving radius from the center CE of the surface FS of the wafer W), and FIG.
  • the vertical axis of each of the parts and (b) represents the value ⁇ [degree] of the inclination angle AN of the second axis AX2.
  • a plurality of curves shown in each of the parts (a) and (b) of FIG. 22 are contour lines of the etching rate [ ⁇ m / min].
  • the distance from the upper surface 32a of the electrostatic chuck 32 to the surface of the dielectric plate 194 is +20 [mm] from the reference position in a state where the second axis AX2 coincides with the axis PX.
  • the contours of the etching rate [ ⁇ m / min] obtained by the configuration of the modified example 2 are shown.
  • 22B in the state where the second axis AX2 coincides with the axis PX, the distance from the upper surface 32a of the electrostatic chuck 32 to the surface of the dielectric plate 194 is +50 [mm] from the reference position.
  • the contours of the etching rate [ ⁇ m / min] obtained by the configuration of the modified example 2 are shown.
  • the position of the intersection XP between the upper surface 32a of the electrostatic chuck 32 and the second axis AX2 is the orientation of the upper surface 32a under the configuration of the second modification.
  • the contour line of the etching rate [ ⁇ m / min] is different in shape and value from that shown in FIG. The reason why such a contour line having an etching rate [ ⁇ m / min] is obtained is that the distance from the first axis AX1 (the central axis of the inclined shaft portion 50) to the electrostatic chuck 32 (wafer) under the configuration of the second modification.
  • the moving radius r [mm] is about 70 [mm] at the etching rate [ ⁇ m / min] shown in FIG. 22A, or the etching rate [ ⁇ m / min shown in FIG.
  • the moving radius r [mm] is about 120 [mm] at min]
  • the change in the etching rate [ ⁇ m / min] is relatively small even if the value ⁇ [degree] of the inclination angle AN is changed.
  • the value of such a moving radius r [mm] (specifically, as shown above, in the case shown in part (a) of FIG. 22, it is about 70 [mm], and in part (b) of FIG.
  • the etching rate [ ⁇ m / min] at about 120 [mm] is used as a reference value for the etching rate [ ⁇ m / min] when a plurality of inclined rotation states RT ( ⁇ i , t i ) are sequentially performed. Can be used.
  • DESCRIPTION OF SYMBOLS 10 ... Plasma processing apparatus, 12 ... Processing container, 12a ... Middle part, 12b ... Connection part, 12e ... Exhaust port, 14 ... Gas supply system, 140 ... High frequency antenna, 142A ... Inner antenna element, 142B ... Outer antenna element, 144 ... sandwiching member, 14a ... first gas supply unit, 14b ... second gas supply unit, 14e, 14f ... gas discharge holes, 150A, 150B ... high frequency power supply, 16 ... plasma source, 160 ... shield member, 162A ... inside Shield wall, 162B ... outer shield wall, 164A ... inner shield plate, 164B ... outer shield plate, 18 ... holding structure, 194 ...
  • dielectric plate 20 ... exhaust system, 20a ... automatic pressure controller, 20b ... turbo molecular pump 20c ... Dry pump, 20d, 20e ... Valve, 22 ... Bias power supply unit, 22a ... First power source, 22b ... Second power source 24 ... Drive device, 26 ... Rectifying member, 26a ... Upper part, 26b ... Lower part, 30 ... Holding part, 32 ... Electrostatic chuck, 32a ... Upper surface, 34 ... Lower electrode, 34a, 35a ... First part, 34b, 35b ... 2nd part, 34f ... refrigerant channel, 35 ... insulating member, 36 ... rotating shaft part, 36a ... columnar part, 36b ...
  • Conduction belt AN ... Inclination angle, AX1 ... First axis, AX2 ... Second axis, CA1, CA2, PL, PM1, PM2, PM3, PM4 ... Curve, CE ... Center, Cnt ... control unit, DL, UA ... direction, DP1, DP2, DP3, DP4 ... deposit, FA1 ... horizontal reference plane, FA2 ... vertical reference plane, FS ... surface, IL ... insulating film, L1 ... underlayer, L11 ... Lower electrode layer, L12 ... Antiferromagnetic layer, L13 ... Ferromagnetic layer, L14 ... Nonmagnetic layer, L2 ... Lower magnetic layer, L21 ... First layer, L22 ...
  • Second layer L3 ... Insulating layer, L4 ... Upper magnetic layer, MSK ... mask, MT ... method, OR ... origin, PX ... axis, S ... space, TC ... one cycle, TH, TL ... period, W ... wafer, XO ... intersection, XP ... intersection.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

Selon l'invention, une vitesse de gravure lors de la gravure au plasma est rendue uniforme. Un dispositif de traitement au plasma (10) est pourvu d'une structure de maintien (18) qui maintient une tranche (W), et d'un récipient de traitement (12) qui accueille la structure de maintien (18). Un procédé (MT) comporte une étape consistant à graver la tranche (W) grâce à du plasma produit dans le récipient de traitement (12), l'étape comprenant un processus d'inclinaison et de rotation de la structure de maintien (18) maintenant la tranche (W) pendant l'exécution de la gravure, et le processus créant successivement une pluralité d'états de rotation inclinés RT(φ, t) par rapport à la structure de maintien (18) maintenant la tranche (W), où, dans les états de rotation inclinés, la tranche (W) est mise en rotation par rapport à un axe central pendant une durée de traitement prédéterminée (t) tout en maintenant un état dans lequel l'axe central de la tranche (W) est incliné par rapport à un axe de référence du récipient de traitement (12) qui est dans le même plan que l'axe central et où, dans la pluralité d'états de rotation inclinés, une combinaison d'une valeur φ d'un angle d'inclinaison (AN) de l'axe central par rapport à l'axe de référence et du temps de traitement (t) diffère pour chacun des états de la pluralité d'états de rotation inclinés.
PCT/JP2016/083455 2015-11-13 2016-11-11 Procédé de gravure d'objet à traiter Ceased WO2017082373A1 (fr)

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US15/775,218 US10685816B2 (en) 2015-11-13 2016-11-11 Method of etching object to be processed
KR1020187013302A KR102651285B1 (ko) 2015-11-13 2016-11-11 피처리체를 에칭하는 방법

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JP2015-222892 2015-11-13
JP2015222892 2015-11-13
JP2016-121815 2016-06-20
JP2016121815A JP6613207B2 (ja) 2015-11-13 2016-06-20 被処理体をエッチングする方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018025855A1 (fr) * 2016-08-05 2018-02-08 東京エレクトロン株式会社 Procédé de traitement d'un élément à traiter
JP2022114412A (ja) * 2021-01-26 2022-08-05 東京エレクトロン株式会社 基板処理方法、部品処理方法及び基板処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002540548A (ja) * 1999-03-30 2002-11-26 ビーコ・インストゥルーメンツ・インコーポレーション 反応性イオンビームエッチング方法及び当該方法を使用して製造された薄膜ヘッド
WO2015097942A1 (fr) * 2013-12-25 2015-07-02 キヤノンアネルバ株式会社 Procédé de traitement de substrat et procédé de production de dispositif semi-conducteur

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002540548A (ja) * 1999-03-30 2002-11-26 ビーコ・インストゥルーメンツ・インコーポレーション 反応性イオンビームエッチング方法及び当該方法を使用して製造された薄膜ヘッド
WO2015097942A1 (fr) * 2013-12-25 2015-07-02 キヤノンアネルバ株式会社 Procédé de traitement de substrat et procédé de production de dispositif semi-conducteur

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018025855A1 (fr) * 2016-08-05 2018-02-08 東京エレクトロン株式会社 Procédé de traitement d'un élément à traiter
US11056370B2 (en) 2016-08-05 2021-07-06 Tokyo Electron Limited Method for processing workpiece
JP2022114412A (ja) * 2021-01-26 2022-08-05 東京エレクトロン株式会社 基板処理方法、部品処理方法及び基板処理装置
JP7621876B2 (ja) 2021-01-26 2025-01-27 東京エレクトロン株式会社 基板処理方法、部品処理方法及び基板処理装置

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