[go: up one dir, main page]

WO2016208792A1 - High-speed texturing method and system - Google Patents

High-speed texturing method and system Download PDF

Info

Publication number
WO2016208792A1
WO2016208792A1 PCT/KR2015/006629 KR2015006629W WO2016208792A1 WO 2016208792 A1 WO2016208792 A1 WO 2016208792A1 KR 2015006629 W KR2015006629 W KR 2015006629W WO 2016208792 A1 WO2016208792 A1 WO 2016208792A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
high speed
processing
laser
substrate adsorption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2015/006629
Other languages
French (fr)
Korean (ko)
Inventor
이천재
박훈
박재웅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cowin DST Co Ltd
Original Assignee
Cowin DST Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cowin DST Co Ltd filed Critical Cowin DST Co Ltd
Publication of WO2016208792A1 publication Critical patent/WO2016208792A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • Embodiments of the present invention relate to high speed texturing methods and systems.
  • the present invention is an energy technology development project carried out by KOWINDS Co., Ltd. (2013.08.01 ⁇ 2016.07.31) as a progress task (task number: 20133030011040) of the Ministry of Trade, Industry and Energy. Development of hydrofluoric acid pre-texturing technology for polycrystalline solar cells].
  • Texturing refers to the overall surface structuring process of processing to have an uneven structure on the silicon wafer surface.
  • the crystalline silicon wafer used in the solar cell manufacturing process includes a sawdamaged layer immediately after wire-sawing.
  • the crystal damage layer healing process is performed before the etching process to remove the crystal damage layer.
  • the wafer undergoes a surface structuring step to increase power generation efficiency and typically uses an etching process using chemical liquids.
  • the wet etching process used for the surface structuring uses a mixed solution of HF and HNO 3, which is an isotropic etching solution having a uniform etching rate regardless of the crystal direction in the case of a polycrystalline silicon wafer.
  • a wet etching process may be performed using 20-55% water, 10-40% concentrated hydrofluoric acid (concentration: 50%), concentrated nitric acid (concentration: 65%), and the like.
  • hydrofluoric acid (HF) and the like used in texturing of conventional wafers may be killed by chemicals that are very harmful to the human body. Nevertheless, the texturing efficiency was low.
  • the present invention has been made to solve the above-described problems, when the conventional texturing processing of the wafer used a human harmful chemicals, such as hydrofluoric acid, and yet there was a disadvantage that the texturing efficiency is low, according to the present invention the remaining processing of the wafer It is possible to improve the processing quality and expand the application by easily removing the water and supplying the processing source.
  • various surface treatment processes are possible, such as etching-based texturing, patterning, cutting, and the like, and thin films of SiO 2, Cr, W, and Mo on a deposition substrate can be formed. I would like to.
  • the present invention is intended to reduce the use of chemical liquids, to improve the production cost by improving the quality control and production efficiency through inspection during processing of the wafer.
  • a high-speed texturing system for solving the above problems is a substrate adsorption porous chuck on which a wafer is disposed; A transfer unit for transferring the substrate adsorption porous chuck; A wafer inspection device for scanning a surface of the wafer on the transferred substrate adsorption porous chuck; A high speed surface processing apparatus for processing a surface of the scanned wafer with a laser and supplying a purge gas to remove processing byproducts; And a wafer cleaning apparatus for cleaning the processed wafer.
  • the chemical liquid processing unit including a chemical residue for removing the processing residue and damage of the wafer, and the substrate liquid treatment substrate immersed porous substrate chuck on which the wafer is disposed; may further include a.
  • the wafer inspection apparatus may scan by inspecting a defect state generated during the entire process or transfer of the surface of the wafer.
  • the transfer unit may be configured as a conveyor.
  • the high speed surface processing apparatus includes a high speed scanner into which a laser is introduced; A multi-array window for irradiating the introduced laser with a laser of a plurality of focal points; And an atmospheric pressure chamber in which the multi-array window is disposed and including a gas supply unit supplying a purge gas to the wafer.
  • the high speed surface processing apparatus may further include an external air blocking unit for forming a blocking wall by injecting a high-pressure air, a mixed gas or an inert gas to the peripheral portion of the processing member.
  • the high speed scanner includes: a polygon mirror on which the laser is reflected; And a lens unit focusing the reflected laser.
  • the multi-array window comprises: an upper window; Lower window; And a multi array formed between the upper window and the lower window and each including a plurality of lenses.
  • the atmospheric chamber includes an upper plate; An intermediate plate formed on one surface of the upper plate and having a flow path through which the purge gas moves; And a lower plate formed on one surface of the intermediate plate and having a supply hole through which the purge gas is supplied.
  • the wafer cleaning apparatus includes a cleaning liquid spraying apparatus for spraying the cleaning liquid to remove the processing residue and laser damage of the processed wafer; Purified water injection device for washing the washing liquid by spraying purified water (DI Water); And a drying apparatus for drying the purified water.
  • a cleaning liquid spraying apparatus for spraying the cleaning liquid to remove the processing residue and laser damage of the processed wafer
  • Purified water injection device for washing the washing liquid by spraying purified water (DI Water)
  • DI Water purified water
  • drying apparatus for drying the purified water.
  • a high speed texturing method comprises the steps of placing a wafer on a substrate adsorption porous chuck; A transfer unit transferring the substrate adsorption porous chuck; A wafer inspection apparatus scanning the surface of the wafer on the transported substrate adsorption porous chuck; A high speed surface processing apparatus laser processing the surface of the scanned wafer and supplying a purge gas to remove processing byproducts; And a wafer cleaning apparatus cleaning the processed wafer.
  • the present invention it is possible to remove the processing residue of the wafer and to supply the processing source, thereby improving the processing quality and expanding the application, and the continuous processing of the wafer through the high-speed scanner and the conveyor.
  • various surface treatment processes are possible, such as etching-based texturing, patterning, cutting, and the like, and thin films of SiO 2, Cr, W, and Mo on a deposition substrate can be formed. Do.
  • FIG. 1 is a diagram illustrating a high speed texturing system according to an embodiment of the present invention.
  • FIG. 2 is a view for explaining a method of healing a wafer according to an embodiment of the present invention.
  • FIG 3 is a view for explaining a high speed processing of the high speed texturing system according to an embodiment of the present invention.
  • FIG. 4 is a diagram illustrating a wafer processed by a high-speed texturing system according to an embodiment of the present invention.
  • Figure 1 is a view showing a high-speed texturing system according to an embodiment of the present invention
  • Figure 2 is a view for explaining a method of healing a wafer according to an embodiment of the present invention.
  • the high-speed texturing system includes a substrate adsorption porous chuck 140, a transfer unit 300, a wafer inspection apparatus 200, a high-speed surface processing apparatus 100, and a wafer cleaning.
  • Device 400 includes a substrate adsorption porous chuck 140, a transfer unit 300, a wafer inspection apparatus 200, a high-speed surface processing apparatus 100, and a wafer cleaning.
  • Device 400 includes a substrate adsorption porous chuck 140, a transfer unit 300, a wafer inspection apparatus 200, a high-speed surface processing apparatus 100, and a wafer cleaning.
  • a wafer 105 is disposed in the substrate adsorption porous chuck 140.
  • the substrate adsorption porous chuck 140 is transported by the transport unit 300, where the transport unit 300 may be configured as a conveyor.
  • the wafer inspection apparatus 200 scans the surface of the wafer 105 on the transferred substrate adsorption porous chuck 140, which is transferred by the transfer unit 300 as described above, and the wafer inspection apparatus 200 is illuminated 201. ), The surface of the wafer 105 can be photographed, and defects on the surface of the wafer 105 can be inspected.
  • buffer station (not shown) that accumulates inspection results and defective wafers generated during the process so as not to interfere with the process flow.
  • healing may be performed before inspection of the wafer 105.
  • the substrate adsorption porous chuck 140 on which the wafer 105 is disposed is immersed on the chemical liquid 171 in the chemical liquid processing unit 170.
  • the wafer 105 may be deepened in the KOH chemical liquid at the time of healing, and may be cleaned by spraying the cleaning liquid through the cleaning liquid spraying device 103.
  • the high speed surface processing apparatus 100 may process the surface of the scanned wafer 105 with a laser 101, and supply a purge gas to the surface of the wafer 105 to remove processing byproducts.
  • the laser 101 is introduced into the high speed scanner 110 to process the wafer 105, and the high speed scanner 110 controls the laser and transmits the laser to the multi array window 120.
  • the high speed scanner 110 may include a polygon mirror 111 and a lens unit 115. In another embodiment, the high speed scanner 110 may be configured as an objective lens.
  • the polygon mirror 110 reflects the laser 101, and the lens unit 115 focuses the reflected laser 101.
  • the lens unit 115 includes a concave lens 116 and a convex lens 117 so that the laser 101 is placed on the wafer 105 through the multi-array window 120. Can be focused.
  • the multi-array window 120 irradiates the introduced laser with a laser of a plurality of focal points.
  • the multi array window 120 may include an upper window, a lower window, and a multi array.
  • the multi-array is formed between the upper window and the lower window, and each of the multi-arrays includes a plurality of lenses so that the introduced laser can be irradiated with the lasers of a plurality of focal points.
  • the laser may shorten the pulse width to be less than picoseconds to minimize processing damage of the wafer and form a nano-level pyramid.
  • Atmospheric pressure chamber 130 is a multi-array window 120 configured as described above is disposed.
  • the atmospheric pressure chamber 130 may include an upper plate, an intermediate plate, and a lower plate.
  • the intermediate plate may be formed on one surface of the upper plate so that a flow path 134 through which the purge gas moves may be formed, and the lower plate may be formed on one surface of the intermediate plate to supply the purge gas.
  • a supply port may be formed to supply the purge gas to the wafer 105, and through this configuration, the purge gas may be efficiently supplied and the size of the atmospheric pressure chamber 130 may be minimized.
  • a wafer 105 is disposed, and a plurality of focal lasers flowing through the multi-array window 130 are irradiated onto the wafer 105.
  • purge gas is supplied through the gas supply unit 136 of the atmospheric pressure chamber 130 to remove particles generated during laser processing.
  • the blocking wall 160 may be formed by spraying high-pressure air, a mixed gas, or an inert gas on the periphery of the wafer 105 through an outside air blocking unit.
  • the wafer cleaning apparatus 400 cleans the wafer 105 processed by the high speed surface processing apparatus 100.
  • the wafer cleaning apparatus 400 may include a cleaning liquid spraying device 401, a purified water spraying device 402, and a drying device 403.
  • the cleaning liquid spraying device 401 sprays the cleaning liquid to remove the processing residue and laser damage of the processed wafer 105, and the purified water spraying device 402 sprays the purified water to wash the cleaning liquid.
  • the drying apparatus 403 dries the purified water remaining on the wafer 105.
  • the time t1 of spraying the cleaning liquid and the time t2 of spraying purified water may be controlled by the moving distance or the amount of the spraying liquid on the transfer unit, and the concentration of the washing liquid in the spraying liquid.
  • FIG 3 is a view for explaining a high speed processing of the high speed texturing system according to an embodiment of the present invention
  • Figure 4 is a view showing a wafer processed by the high speed texturing system according to an embodiment of the present invention.
  • the wafer before processing since the wafer before processing has a damaged portion on the surface of the wafer as in the wafer photo 410 before processing, the wafer is subjected to a healing treatment as in the wafer photo 420 that has been treated.
  • the residue may be removed through cleaning as in the wafer photo 440 after cleaning.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)

Abstract

The present invention relates to a high-speed texturing system comprising: a substrate adsorption porous chuck on which a wafer is disposed; a transfer unit for transferring the substrate adsorption porous chuck; a wafer inspection device for scanning the surface of the wafer on the substrate adsorption porous chuck being transferred; a high-speed surface processing device for processing the scanned surface of the wafer by a laser and supplying a purge gas to remove a processing by-product; and a wafer cleaning device for cleaning the processed wafer.

Description

고속 텍스쳐링 방법 및 시스템High speed texturing methods and systems

본 발명의 실시예는 고속 텍스쳐링 방법 및 시스템에 관한 것이다.Embodiments of the present invention relate to high speed texturing methods and systems.

본 발명은 산업통산자원부의 진행과제(과제번호: 20133030011040)로 ㈜코윈디에스티가 수행(2013.08.01 ~ 2016.07.31)한 에너지기술개발사업[과제명: 시간당 3,600장 생산성을 갖는 레이저를 이용한 156mm급 다결정 태양전지셀용 불산 프리 텍스쳐링 기술 개발]의 결과물로 도출된 것이다.The present invention is an energy technology development project carried out by KOWINDS Co., Ltd. (2013.08.01 ~ 2016.07.31) as a progress task (task number: 20133030011040) of the Ministry of Trade, Industry and Energy. Development of hydrofluoric acid pre-texturing technology for polycrystalline solar cells].

텍스쳐링(texturing)은 실리콘 웨이퍼 표면에 요철 구조를 갖도록 처리하는 표면 구조화 공정 전반을 의미한다.Texturing refers to the overall surface structuring process of processing to have an uneven structure on the silicon wafer surface.

한편, 태양전지 제조공정에서 사용되는 결정질 실리콘 웨이퍼는 와이어 소잉(wire-sawing) 직후 결정손상층(sawdamaged layer)을 포함한다. 이 결정손상층을 제거하기 위한 식각공정 전 결정손상층 힐링공정(healing process)이 실시된다.On the other hand, the crystalline silicon wafer used in the solar cell manufacturing process includes a sawdamaged layer immediately after wire-sawing. The crystal damage layer healing process is performed before the etching process to remove the crystal damage layer.

힐링공정 후 웨이퍼는 발전효율 증가를 위한 표면구조화 단계를 거치며 통상 약액을 사용하는 식각공정(etching process)을 사용한다.After the healing process, the wafer undergoes a surface structuring step to increase power generation efficiency and typically uses an etching process using chemical liquids.

표면구조화에 일반적으로 사용되는 습식 식각공정법은 다결정 실리콘 웨이퍼에 경우 결정방향과 상관없이 균일한 식각 속도를 갖는 등방성 에칭액인 HF 와 HNO3의 혼합용액을 사용한다.In general, the wet etching process used for the surface structuring uses a mixed solution of HF and HNO 3, which is an isotropic etching solution having a uniform etching rate regardless of the crystal direction in the case of a polycrystalline silicon wafer.

이러한 종류의 공정방법 에칭액으로서 물 20-55%, 농축불산(농도: 50%) 10-40%, 농축 질산(농도: 65%)등을 사용하여 습식 식각공정을 수행할 수 있다.Process of this kind As the etchant, a wet etching process may be performed using 20-55% water, 10-40% concentrated hydrofluoric acid (concentration: 50%), concentrated nitric acid (concentration: 65%), and the like.

그러나, 종래의 웨이퍼의 텍스쳐링 가공 시에 사용되는 불산(HF) 등은 인체에 매우 유해한 화학 물질로 사망에 이를 수 있다. 그럼에도 텍스쳐링 효율이 낮은 단점이 있었다.However, hydrofluoric acid (HF) and the like used in texturing of conventional wafers may be killed by chemicals that are very harmful to the human body. Nevertheless, the texturing efficiency was low.

다결정 실리콘 웨이퍼의 결정손상층 제거 공정은 태양전지의 에너지 변환효율 향상에 매우 큰 영향을 미칠 수 있는 필수 공정이므로, 이 공정을 보다 효과적으로 수행할 수 있는 공정방법의 개선이 요구되고 있다. Since the process of removing the crystal damage layer of the polycrystalline silicon wafer is an essential process that can greatly affect the energy conversion efficiency of the solar cell, it is required to improve the process method to perform this process more effectively.

본 발명은 전술한 문제를 해결하기 위해 안출된 것으로서, 종래의 웨이퍼의 텍스쳐링 가공 시에는 불산 등의 인체 유해 화학 물질을 사용하였으며, 그럼에도 텍스쳐링 효율이 낮은 단점이 있었으나, 본 발명에 따르면 웨이퍼의 가공 잔여물을 제거와 가공 소스의 공급을 용이하게 하여 가공 품질 개선과 적용의 확대가 가능하다.The present invention has been made to solve the above-described problems, when the conventional texturing processing of the wafer used a human harmful chemicals, such as hydrofluoric acid, and yet there was a disadvantage that the texturing efficiency is low, according to the present invention the remaining processing of the wafer It is possible to improve the processing quality and expand the application by easily removing the water and supplying the processing source.

본 발명은 다양한 표면 처리 공정이 가능하여, 식각 기반의 텍스쳐링(Texturing), 패터닝(Patterning), 커팅(Cutting) 등이 가능하고, 증착 기판의 SiO2, Cr, W, Mo 등의 박막의 형성이 가능하도록 하고자 한다.According to the present invention, various surface treatment processes are possible, such as etching-based texturing, patterning, cutting, and the like, and thin films of SiO 2, Cr, W, and Mo on a deposition substrate can be formed. I would like to.

본 발명은 약액 사용을 절감하고, 웨이퍼의 가공시의 검사를 통해 품질을 관리 및 생산 효율을 향상시켜 제조 비용을 개선하고자 한다.The present invention is intended to reduce the use of chemical liquids, to improve the production cost by improving the quality control and production efficiency through inspection during processing of the wafer.

전술한 문제를 해결하기 위한 본 실시예에 따른 고속 텍스쳐링 시스템은 웨이퍼가 배치되는 기판 흡착 다공질 척; 상기 기판 흡착 다공질 척을 이송하는 이송부; 상기 이송되는 기판 흡착 다공질 척 상의 상기 웨이퍼의 표면을 스캐닝하는 웨이퍼 검사 장치; 상기 스캐닝한 웨이퍼의 표면을 레이저로 가공하고, 퍼지 가스를 공급하여 가공 부산물을 제거하는 고속 표면 가공 장치; 상기 가공된 웨이퍼를 세정하는 웨이퍼 세정 장치;를 포함한다.A high-speed texturing system according to the present embodiment for solving the above problems is a substrate adsorption porous chuck on which a wafer is disposed; A transfer unit for transferring the substrate adsorption porous chuck; A wafer inspection device for scanning a surface of the wafer on the transferred substrate adsorption porous chuck; A high speed surface processing apparatus for processing a surface of the scanned wafer with a laser and supplying a purge gas to remove processing byproducts; And a wafer cleaning apparatus for cleaning the processed wafer.

본 발명의 다른 일실시예에 따르면, 웨이퍼의 가공 잔여물과 손상부를 제거하는 약액을 포함하며, 상기 웨이퍼가 배치된 기판 흡착 다공질 척이 액침되는 약액 처리부;를 더 포함할 수 있다.According to another embodiment of the present invention, the chemical liquid processing unit including a chemical residue for removing the processing residue and damage of the wafer, and the substrate liquid treatment substrate immersed porous substrate chuck on which the wafer is disposed; may further include a.

본 발명의 다른 일실시예에 따르면, 상기 웨이퍼 검사 장치는 상기 웨이퍼의 표면의 전 공정 또는 이송 중 발생한 결함 상태를 스캐닝하여 검사할 수 있다.According to another embodiment of the present invention, the wafer inspection apparatus may scan by inspecting a defect state generated during the entire process or transfer of the surface of the wafer.

본 발명의 다른 일실시예에 따르면, 상기 이송부는 컨베이어로 구성될 수 있다.According to another embodiment of the present invention, the transfer unit may be configured as a conveyor.

본 발명의 다른 일실시예에 따르면, 상기 고속 표면 가공 장치는 레이저가 유입되는 고속 스캐너; 상기 유입된 레이저를 다수의 초점의 레이저로 조사하는 멀티 어레이 윈도우; 및 상기 멀티 어레이 윈도우가 배치되며, 퍼지 가스를 상기 웨이퍼에 공급하는 가스 공급부를 포함하는 대기압 챔버;를 포함할 수 있다.According to another embodiment of the present invention, the high speed surface processing apparatus includes a high speed scanner into which a laser is introduced; A multi-array window for irradiating the introduced laser with a laser of a plurality of focal points; And an atmospheric pressure chamber in which the multi-array window is disposed and including a gas supply unit supplying a purge gas to the wafer.

본 발명의 다른 일실시예에 따르면, 상기 고속 표면 가공 장치는 상기 가공 부재의 주변부에 고압의 공기, 혼합 가스 또는 불활성 가스를 분사하여 차단벽을 형성하는 외기 차단부;를 더 포함할 수 있다.According to another embodiment of the present invention, the high speed surface processing apparatus may further include an external air blocking unit for forming a blocking wall by injecting a high-pressure air, a mixed gas or an inert gas to the peripheral portion of the processing member.

본 발명의 다른 일실시예에 따르면, 상기 고속 스캐너는 상기 레이저가 반사되는 폴리곤 미러; 및 상기 반사된 레이저를 포커싱하는 렌즈부;를 포함할 수 있다.According to another embodiment of the present invention, the high speed scanner includes: a polygon mirror on which the laser is reflected; And a lens unit focusing the reflected laser.

본 발명의 다른 일실시예에 따르면, 상기 멀티 어레이 윈도우는 상부 윈도우; 하부 윈도우; 및 상기 상부 윈도우와 상기 하부 윈도우의 사이에 형성되어 각각 다수의 렌즈를 포함하는 멀티 어레이;를 포함할 수 있다.According to another embodiment of the present invention, the multi-array window comprises: an upper window; Lower window; And a multi array formed between the upper window and the lower window and each including a plurality of lenses.

본 발명의 다른 일실시예에 따르면, 상기 대기압 챔버는 상부 플레이트; 상기 상부 플레이트의 일면에 형성되어, 상기 퍼지 가스가 이동하는 유로가 형성되는 중간 플레이트; 및 상기 중간 플레이트의 일면에 형성되어, 상기 퍼지 가스가 공급되는 공급구가 형성되는 하부 플레이트;를 포함할 수 있다.According to another embodiment of the present invention, the atmospheric chamber includes an upper plate; An intermediate plate formed on one surface of the upper plate and having a flow path through which the purge gas moves; And a lower plate formed on one surface of the intermediate plate and having a supply hole through which the purge gas is supplied.

본 발명의 다른 일실시예에 따르면, 상기 웨이퍼 세정 장치는 세정액을 분사하여 상기 가공된 웨이퍼의 가공 잔류물과 레이저 데미지를 제거하는 세정액 분사 장치; 정제수(DI Water)을 분사하여 상기 세정액을 세척하는 정제수 분사 장치; 및 상기 정제수를 건조시키는 건조 장치;를 포함할 수 있다.According to another embodiment of the present invention, the wafer cleaning apparatus includes a cleaning liquid spraying apparatus for spraying the cleaning liquid to remove the processing residue and laser damage of the processed wafer; Purified water injection device for washing the washing liquid by spraying purified water (DI Water); And a drying apparatus for drying the purified water.

본 발명에 따른 고속 텍스쳐링 방법은 기판 흡착 다공질 척 상에 웨이퍼를 배치하는 단계; 이송부가 상기 기판 흡착 다공질 척을 이송하는 단계; 웨이퍼 검사 장치가 상기 이송되는 기판 흡착 다공질 척 상의 상기 웨이퍼의 표면을 스캐닝하는 단계; 고속 표면 가공 장치가 상기 스캐닝한 웨이퍼의 표면을 레이저로 가공하고, 퍼지 가스를 공급하여 가공 부산물을 제거하는 단계; 및 웨이퍼 세정 장치가 상기 가공된 웨이퍼를 세정하는 단계;를 포함한다.A high speed texturing method according to the present invention comprises the steps of placing a wafer on a substrate adsorption porous chuck; A transfer unit transferring the substrate adsorption porous chuck; A wafer inspection apparatus scanning the surface of the wafer on the transported substrate adsorption porous chuck; A high speed surface processing apparatus laser processing the surface of the scanned wafer and supplying a purge gas to remove processing byproducts; And a wafer cleaning apparatus cleaning the processed wafer.

본 발명에 따르면 웨이퍼의 가공 잔여물을 제거와 가공 소스의 공급을 용이하게 하여 가공 품질 개선과 적용의 확대가 가능하며, 고속 스캐너와 컨베이어를 통해 웨이퍼의 연속 가공이 가능하다.According to the present invention, it is possible to remove the processing residue of the wafer and to supply the processing source, thereby improving the processing quality and expanding the application, and the continuous processing of the wafer through the high-speed scanner and the conveyor.

본 발명은 다양한 표면 처리 공정이 가능하여, 식각 기반의 텍스쳐링(Texturing), 패터닝(Patterning), 커팅(Cutting) 등이 가능하고, 증착 기판의 SiO2, Cr, W, Mo 등의 박막의 형성이 가능하다.According to the present invention, various surface treatment processes are possible, such as etching-based texturing, patterning, cutting, and the like, and thin films of SiO 2, Cr, W, and Mo on a deposition substrate can be formed. Do.

본 발명은 약액 사용을 절감하고, 웨이퍼의 가공시의 검사를 통해 품질을 관리 및 생산 효율을 향상시켜 제조 비용을 개선할 수 있다.The present invention can reduce the use of chemical liquid, and can improve the manufacturing cost by improving the quality control and production efficiency through inspection during processing of the wafer.

도 1은 본 발명의 일실시예에 따른 고속 텍스쳐링 시스템을 도시한 도면이다.1 is a diagram illustrating a high speed texturing system according to an embodiment of the present invention.

도 2는 본 발명의 일실시예에 따른 웨이퍼를 힐링하는 방법을 설명하기 위한 도면이다.2 is a view for explaining a method of healing a wafer according to an embodiment of the present invention.

도 3은 본 발명의 일실시예에 따른 고속 텍스쳐링 시스템의 고속 가공을 설명하기 위한 도면이다.3 is a view for explaining a high speed processing of the high speed texturing system according to an embodiment of the present invention.

도 4는 본 발명의 일실시예에 따른 고속 텍스쳐링 시스템이 가공한 웨이퍼를 도시한 도면이다.4 is a diagram illustrating a wafer processed by a high-speed texturing system according to an embodiment of the present invention.

이하에서는 첨부한 도면을 참조하여 바람직한 본 발명의 일실시예에 대해서 상세히 설명한다. 다만, 실시형태를 설명함에 있어서, 관련된 공지 기능 혹은 구성에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우 그에 대한 상세한 설명은 생략한다. 또한, 도면에서의 각 구성요소들의 크기는 설명을 위하여 과장될 수 있으며, 실제로 적용되는 크기를 의미하는 것은 아니다.Hereinafter, with reference to the accompanying drawings will be described in detail an embodiment of the present invention. However, in describing the embodiments, when it is determined that detailed descriptions of related known functions or configurations may unnecessarily obscure the subject matter of the present invention, detailed descriptions thereof will be omitted. In addition, the size of each component in the drawings may be exaggerated for description, it does not mean the size that is actually applied.

도 1은 본 발명의 일실시예에 따른 고속 텍스쳐링 시스템을 도시한 도면이고, 도 2는 본 발명의 일실시예에 따른 웨이퍼를 힐링하는 방법을 설명하기 위한 도면이다.1 is a view showing a high-speed texturing system according to an embodiment of the present invention, Figure 2 is a view for explaining a method of healing a wafer according to an embodiment of the present invention.

도 1 및 도 2를 참조하여 본 발명의 일실시예에 따른 고속 텍스쳐링 시스템을 설명하기로 한다.1 and 2 will be described a high-speed texturing system according to an embodiment of the present invention.

도 1에 도시된 바와 같이, 본 발명의 일실시예에 따른 고속 텍스쳐링 시스템은 기판 흡착 다공질 척(140), 이송부(300), 웨이퍼 검사 장치(200), 고속 표면 가공 장치(100), 웨이퍼 세정 장치(400)를 포함한다.As shown in FIG. 1, the high-speed texturing system according to an embodiment of the present invention includes a substrate adsorption porous chuck 140, a transfer unit 300, a wafer inspection apparatus 200, a high-speed surface processing apparatus 100, and a wafer cleaning. Device 400.

기판 흡착 다공질 척(140)은 웨이퍼(105)가 배치된다.In the substrate adsorption porous chuck 140, a wafer 105 is disposed.

상기 기판 흡착 다공질 척(140)은 이송부(300)에 의해 이송되며, 이때 상기 이송부(300)는 컨베이어로 구성될 수 있다.The substrate adsorption porous chuck 140 is transported by the transport unit 300, where the transport unit 300 may be configured as a conveyor.

웨이퍼 검사 장치(200)는 상기와 같이 이송부(300)에 의해 이송되는 상기 이송되는 기판 흡착 다공질 척(140) 상의 웨이퍼(105)의 표면을 스캐닝하며, 상기 웨이퍼 검사 장치(200)는 조명(201)을 포함하여 상기 웨이퍼(105)의 표면을 촬영하고, 상기 웨이퍼(105)의 표면의 결함을 검사할 수 있다.The wafer inspection apparatus 200 scans the surface of the wafer 105 on the transferred substrate adsorption porous chuck 140, which is transferred by the transfer unit 300 as described above, and the wafer inspection apparatus 200 is illuminated 201. ), The surface of the wafer 105 can be photographed, and defects on the surface of the wafer 105 can be inspected.

또한, 검사 결과와 공정 중 발생하는 불량 웨이퍼를 공정 흐름에 방해되지 않도록 적치하는 버퍼스테이션(미도시)이 있다.In addition, there is a buffer station (not shown) that accumulates inspection results and defective wafers generated during the process so as not to interfere with the process flow.

한편, 본 발명의 일실시예에 따르면, 상기 웨이퍼(105)의 검사 이전에 힐링(healing)을 실행할 수 있다.Meanwhile, according to one embodiment of the present invention, healing may be performed before inspection of the wafer 105.

이를 위하여, 도 2에 도시된 바와 같이 약액 처리부(170) 내의 약액(171) 상에 상기 웨이퍼(105)가 배치된 기판 흡착 다공질 척(140)을 액침시킨다. 예를 들어, 힐링 시에 웨이퍼(105)를 KOH 약액 내에 디핑(deeping)되도록 하고, 세정액 분사 장치(103)를 통해 세정액을 분사하여 세정할 수 있다.To this end, as shown in FIG. 2, the substrate adsorption porous chuck 140 on which the wafer 105 is disposed is immersed on the chemical liquid 171 in the chemical liquid processing unit 170. For example, the wafer 105 may be deepened in the KOH chemical liquid at the time of healing, and may be cleaned by spraying the cleaning liquid through the cleaning liquid spraying device 103.

고속 표면 가공 장치(100)는 상기 스캐닝한 웨이퍼(105)의 표면을 레이저(101)로 가공하고, 상기 웨이퍼(105)의 표면에 퍼지 가스를 공급하여 가공 부산물을 제거할 수 있다.The high speed surface processing apparatus 100 may process the surface of the scanned wafer 105 with a laser 101, and supply a purge gas to the surface of the wafer 105 to remove processing byproducts.

보다 상세하게 설명하면, 웨이퍼(105)의 가공을 위하여 레이저(101)가 고속 스캐너(110)로 유입되며, 고속 스캐너(110)는 상기 레이저를 제어하여 멀티 어레이 윈도우(120)로 전달한다.In more detail, the laser 101 is introduced into the high speed scanner 110 to process the wafer 105, and the high speed scanner 110 controls the laser and transmits the laser to the multi array window 120.

상기 고속 스캐너(110)는 폴리곤 미러(111)와 렌즈부(115)를 포함하여 구성될 수 있으며, 또 다른 실시예에서는 상기 고속 스캐너(110)가 대물 렌즈로 구성될 수도 있다.The high speed scanner 110 may include a polygon mirror 111 and a lens unit 115. In another embodiment, the high speed scanner 110 may be configured as an objective lens.

폴리곤 미러(110)는 레이저(101)를 반사하고, 렌즈부(115)는 상기 반사된 레이저(101)를 포커싱(focusing)한다. 이때, 도 1의 실시예에 따르면 상기 렌즈부(115)는 오목 렌즈(116)와 볼록 렌즈(117)로 구성되어 상기 레이저(101)를 멀티 어레이 윈도우(120)를 통해 웨이퍼(105) 상에 포커싱 되도록 할 수 있다.The polygon mirror 110 reflects the laser 101, and the lens unit 115 focuses the reflected laser 101. In this case, according to the exemplary embodiment of FIG. 1, the lens unit 115 includes a concave lens 116 and a convex lens 117 so that the laser 101 is placed on the wafer 105 through the multi-array window 120. Can be focused.

멀티 어레이 윈도우(120)는 상기 유입된 레이저를 다수의 초점의 레이저로 조사한다.The multi-array window 120 irradiates the introduced laser with a laser of a plurality of focal points.

보다 구체적으로, 멀티 어레이 윈도우(120)는 상부 윈도우, 하부 윈도우 및 멀티 어레이를 포함하여 구성될 수 있다. 멀티 어레이는 상부 윈도우와 하부 윈도우의 사이에 형성되며, 상기 각각의 멀티 어레이에는 다수의 렌즈가 포함되어, 유입된 레이저를 다수의 초점의 레이저로 조사할 수 있다.More specifically, the multi array window 120 may include an upper window, a lower window, and a multi array. The multi-array is formed between the upper window and the lower window, and each of the multi-arrays includes a plurality of lenses so that the introduced laser can be irradiated with the lasers of a plurality of focal points.

한편, 본 발명에 따르면 상기 레이저는 펄스 폭을 피코초 이하로 짧게 구성하여 웨이퍼의 가공 데미지를 최소화하고 나노급 피라미드를 형성할 수 있다. Meanwhile, according to the present invention, the laser may shorten the pulse width to be less than picoseconds to minimize processing damage of the wafer and form a nano-level pyramid.

대기압 챔버(130)는 상기와 같이 구성된 멀티 어레이 윈도우(120)가 배치된다.Atmospheric pressure chamber 130 is a multi-array window 120 configured as described above is disposed.

상기 대기압 챔버(130)는 퍼지 가스를 웨이퍼(105)에 공급하는 가스 공급부(136)를 포함한다.The atmospheric chamber 130 includes a gas supply unit 136 for supplying a purge gas to the wafer 105.

또한, 상기 대기압 챔버(130)는 상부 플레이트, 중간 플레이트 및 하부 플레이트를 포함하여 구성될 수 있다. In addition, the atmospheric pressure chamber 130 may include an upper plate, an intermediate plate, and a lower plate.

보다 상세하게 설명하면, 중간 플레이트는 상기 상부 플레이트의 일면에 형성되어, 퍼지 가스가 이동하는 유로(134)가 형성될 수 있으며, 하부 플레이트는 상기 중간 플레이트의 일면에 형성되어, 퍼지 가스가 공급되는 공급구가 형성되어 웨이퍼(105)에 퍼지 가스를 공급할 수 있으며, 이와 같은 구성을 통해 퍼지 가스의 공급을 효율적으로 하면서도 대기압 챔버(130)의 크기를 최소화할 수 있다.In more detail, the intermediate plate may be formed on one surface of the upper plate so that a flow path 134 through which the purge gas moves may be formed, and the lower plate may be formed on one surface of the intermediate plate to supply the purge gas. A supply port may be formed to supply the purge gas to the wafer 105, and through this configuration, the purge gas may be efficiently supplied and the size of the atmospheric pressure chamber 130 may be minimized.

기판 흡착 다공질 척(140)은 웨이퍼(105)가 배치되어, 상기 멀티 어레이 윈도우(130)를 통해 유입되는 다수의 초점의 레이저가 상기 웨이퍼(105) 상에 조사된다.In the substrate adsorption porous chuck 140, a wafer 105 is disposed, and a plurality of focal lasers flowing through the multi-array window 130 are irradiated onto the wafer 105.

이와 같은 웨이퍼(105)의 레이저 가공 시에는 대기압 챔버(130)의 가스 공급부(136)를 통해 퍼지 가스가 공급되어, 레이저 가공 시에 발생하는 파티클을 제거할 수 있다.In the laser processing of the wafer 105, purge gas is supplied through the gas supply unit 136 of the atmospheric pressure chamber 130 to remove particles generated during laser processing.

또한, 본 발명에 따르면 외기 차단부를 통해 상기 웨이퍼(105)의 주변부에 고압의 공기, 혼합 가스 또는 불활성 가스를 분사하여 차단벽(160)을 형성할 수 있다.In addition, according to the present invention, the blocking wall 160 may be formed by spraying high-pressure air, a mixed gas, or an inert gas on the periphery of the wafer 105 through an outside air blocking unit.

따라서, 종래의 웨이퍼의 텍스쳐링 가공 시에는 불산 등의 인체 유해 화학 물질을 사용하였으며, 그럼에도 텍스쳐링 효율이 낮은 단점이 있었으나, 본 발명에 따르면 웨이퍼(105)의 가공 잔여물을 제거와 가공 소스의 공급을 용이하게 하여 가공 품질 개선과 적용의 확대가 가능하다.Therefore, in the conventional texturing of the wafer, human harmful chemicals such as hydrofluoric acid were used. However, the texturing efficiency was low, but according to the present invention, the processing residue of the wafer 105 was removed and the supply of the processing source was prevented. It is easy to improve the processing quality and to expand the application.

웨이퍼 세정 장치(400)는 상기 고속 표면 가공 장치(100)에서 가공된 웨이퍼(105)를 세정한다.The wafer cleaning apparatus 400 cleans the wafer 105 processed by the high speed surface processing apparatus 100.

보다 상세하게 설명하면, 웨이퍼 세정 장치(400)는 세정액 분사 장치(401), 정제수 분사 장치(402) 및 건조 장치(403)를 포함하여 구성될 수 있다.In more detail, the wafer cleaning apparatus 400 may include a cleaning liquid spraying device 401, a purified water spraying device 402, and a drying device 403.

세정액 분사 장치(401)는 세정액을 분사하여 상기 가공된 웨이퍼(105)의 가공 잔류물과 레이저 데미지를 제거하고, 정제수 분사 장치(402)는 정제수(DI Water)을 분사하여 상기 세정액을 세척하며, 건조 장치(403)는 상기 웨이퍼(105)에 잔존하는 정제수를 건조시킨다.The cleaning liquid spraying device 401 sprays the cleaning liquid to remove the processing residue and laser damage of the processed wafer 105, and the purified water spraying device 402 sprays the purified water to wash the cleaning liquid. The drying apparatus 403 dries the purified water remaining on the wafer 105.

이때, 상기 세정액의 분사하는 시간(t1)와 정제수의 분사하는 시간(t2)은 이송부 상에서의 이동 거리 또는 분사액의 량, 분사액 중 세정액의 농도로 제어할 수 있다.At this time, the time t1 of spraying the cleaning liquid and the time t2 of spraying purified water may be controlled by the moving distance or the amount of the spraying liquid on the transfer unit, and the concentration of the washing liquid in the spraying liquid.

도 3은 본 발명의 일실시예에 따른 고속 텍스쳐링 시스템의 고속 가공을 설명하기 위한 도면이고, 도 4는 본 발명의 일실시예에 따른 고속 텍스쳐링 시스템이 가공한 웨이퍼를 도시한 도면이다.3 is a view for explaining a high speed processing of the high speed texturing system according to an embodiment of the present invention, Figure 4 is a view showing a wafer processed by the high speed texturing system according to an embodiment of the present invention.

종래의 웨이퍼 가공 시에는 x, y의 2축 가공을 실시하는 경우 2 m/s로 속도가 느린 단점이 있었다.In the conventional wafer processing, when performing biaxial machining of x and y, the speed was slow at 2 m / s.

그러나, 본 발명의 일실시예에 따르면 폴리곤 미러(110)를 이용하므로 2 MHz의 레이저를 사용하는 경우 156 X 156 크기의 웨이퍼를 가공시에 20 m/s의 속도로서 1장당 4초 이내의 가공이 가능하다. However, according to the exemplary embodiment of the present invention, since the polygon mirror 110 is used, when a 2 MHz laser is used, processing of a 156 X 156 size wafer at a speed of 20 m / s at a rate of 20 m / s or less per sheet is performed within 4 seconds. This is possible.

또한, 본 발명의 일실시예에 따르면 4 레이저 헤드 모듈을 사용하는 경우 1 장당 1초 이내의 가공이 가능하다.In addition, according to an embodiment of the present invention when using the four laser head module it is possible to process within 1 second per sheet.

도 4에 도시된 바와 같이 가공 전의 웨이퍼는 가공전 웨이퍼 사진(410)에서와 같이 웨이퍼의 표면에 손상된 부분이 있으므로, 힐링 처리한 웨이퍼 사진(420)에서와 같이 힐링 처리를 실시한다. As shown in FIG. 4, since the wafer before processing has a damaged portion on the surface of the wafer as in the wafer photo 410 before processing, the wafer is subjected to a healing treatment as in the wafer photo 420 that has been treated.

이후에는 레이저 가공 후의 웨이퍼 사진(430)에서와 같이 웨이퍼를 가공한다. 이때, 본 발명에 따르면 상기 레이저는 펄스 폭을 피코초 이하로 짧게 구성하여 웨이퍼의 가공 데미지를 최소화하고 나노급 피라미드를 형성할 수 있다. Thereafter, the wafer is processed as in the wafer photo 430 after laser processing. In this case, according to the present invention, the laser may shorten the pulse width to be less than picoseconds to minimize processing damage of the wafer and form a nano-level pyramid.

이후, 세정 후의 웨이퍼 사진(440)에서와 같이 세정을 통해 잔존물을 제거할 수 있다.Thereafter, the residue may be removed through cleaning as in the wafer photo 440 after cleaning.

전술한 바와 같은 본 발명의 상세한 설명에서는 구체적인 실시예에 관해 설명하였다. 그러나 본 발명의 범주에서 벗어나지 않는 한도 내에서는 여러 가지 변형이 가능하다. 본 발명의 기술적 사상은 본 발명의 전술한 실시예에 국한되어 정해져서는 안 되며, 특허청구범위뿐만 아니라 이 특허청구범위와 균등한 것들에 의해 정해져야 한다.In the detailed description of the invention as described above, specific embodiments have been described. However, many modifications are possible without departing from the scope of the invention. The technical spirit of the present invention should not be limited to the above-described embodiments of the present invention, but should be determined not only by the claims, but also by those equivalent to the claims.

Claims (11)

웨이퍼가 배치되는 기판 흡착 다공질 척;A substrate adsorption porous chuck on which the wafer is disposed; 상기 기판 흡착 다공질 척을 이송하는 이송부;A transfer unit for transferring the substrate adsorption porous chuck; 상기 이송되는 기판 흡착 다공질 척 상의 상기 웨이퍼의 표면을 스캐닝하는 웨이퍼 검사 장치;A wafer inspection device for scanning a surface of the wafer on the transferred substrate adsorption porous chuck; 상기 스캐닝한 웨이퍼의 표면을 레이저로 가공하고, 퍼지 가스를 공급하여 가공 부산물을 제거하는 고속 표면 가공 장치;A high speed surface processing apparatus for processing a surface of the scanned wafer with a laser and supplying a purge gas to remove processing byproducts; 상기 가공된 웨이퍼를 세정하는 웨이퍼 세정 장치;A wafer cleaning apparatus for cleaning the processed wafers; 를 포함하는 고속 텍스쳐링 시스템.High speed texturing system comprising a. 청구항 1에 있어서,The method according to claim 1, 웨이퍼의 가공 잔여물과 손상부를 제거하는 약액을 포함하며, 상기 웨이퍼가 배치된 기판 흡착 다공질 척이 액침되는 약액 처리부;A chemical liquid processing unit including a chemical liquid for removing processing residues and damage portions of the wafer, wherein the chemical liquid processing unit on which the substrate adsorption porous chuck on which the wafer is disposed is immersed; 를 더 포함하는 고속 텍스쳐링 시스템.A high speed texturing system further comprising. 청구항 1에 있어서,The method according to claim 1, 상기 웨이퍼 검사 장치는,The wafer inspection device, 상기 웨이퍼의 표면의 전 공정 또는 이송 중 발생한 결함 상태를 스캐닝하여 검사하는 고속 텍스쳐링 시스템.A high speed texturing system that scans and inspects defect conditions that occur during the entire process or transfer of the wafer surface. 청구항 1에 있어서,The method according to claim 1, 상기 이송부는,The transfer unit, 컨베이어인 고속 텍스쳐링 시스템.High speed texturing system that is a conveyor. 청구항 1에 있어서,The method according to claim 1, 상기 고속 표면 가공 장치는,The high speed surface processing apparatus, 레이저가 유입되는 고속 스캐너;A high speed scanner into which a laser is introduced; 상기 유입된 레이저를 다수의 초점의 레이저로 조사하는 멀티 어레이 윈도우; 및A multi-array window for irradiating the introduced laser with a laser of a plurality of focal points; And 상기 멀티 어레이 윈도우가 배치되며, 퍼지 가스를 상기 웨이퍼에 공급하는 가스 공급부를 포함하는 대기압 챔버;An atmospheric pressure chamber in which the multi-array window is disposed, the atmospheric pressure chamber including a gas supply unit supplying a purge gas to the wafer; 를 포함하는 고속 텍스쳐링 시스템.High speed texturing system comprising a. 청구항 5에 있어서,The method according to claim 5, 상기 고속 표면 가공 장치는,The high speed surface processing apparatus, 상기 가공 부재의 주변부에 고압의 공기, 혼합 가스 또는 불활성 가스를 분사하여 차단벽을 형성하는 외기 차단부;An external air blocking unit for forming a blocking wall by injecting high-pressure air, a mixed gas, or an inert gas into the periphery of the processing member; 를 더 포함하는 고속 텍스쳐링 시스템.A high speed texturing system further comprising. 청구항 5에 있어서,The method according to claim 5, 상기 고속 표면 가공 장치는,The high speed surface processing apparatus, 상기 고속 스캐너는,The high speed scanner, 상기 레이저가 반사되는 폴리곤 미러; 및A polygon mirror on which the laser is reflected; And 상기 반사된 레이저를 포커싱하는 렌즈부;A lens unit focusing the reflected laser; 를 포함하는 고속 텍스쳐링 시스템.High speed texturing system comprising a. 청구항 5에 있어서,The method according to claim 5, 상기 멀티 어레이 윈도우는,The multi array window, 상부 윈도우;Upper window; 하부 윈도우; 및Lower window; And 상기 상부 윈도우와 상기 하부 윈도우의 사이에 형성되어 각각 다수의 렌즈를 포함하는 멀티 어레이;A multi array formed between the upper window and the lower window and each including a plurality of lenses; 를 포함하는 고속 텍스쳐링 시스템.High speed texturing system comprising a. 청구항 5에 있어서,The method according to claim 5, 상기 대기압 챔버는,The atmospheric pressure chamber, 상부 플레이트;Upper plate; 상기 상부 플레이트의 일면에 형성되어, 상기 퍼지 가스가 이동하는 유로가 형성되는 중간 플레이트; 및An intermediate plate formed on one surface of the upper plate and having a flow path through which the purge gas moves; And 상기 중간 플레이트의 일면에 형성되어, 상기 퍼지 가스가 공급되는 공급구가 형성되는 하부 플레이트;A lower plate formed on one surface of the intermediate plate and having a supply hole through which the purge gas is supplied; 를 포함하는 고속 텍스쳐링 시스템.High speed texturing system comprising a. 청구항 1에 있어서,The method according to claim 1, 상기 웨이퍼 세정 장치는,The wafer cleaning device, 세정액을 분사하여 상기 가공된 웨이퍼의 가공 잔류물과 레이저 데미지를 제거하는 세정액 분사 장치;A cleaning liquid spraying device for spraying a cleaning liquid to remove processing residues and laser damage of the processed wafer; 정제수(DI Water)을 분사하여 상기 세정액을 세척하는 정제수 분사 장치; 및Purified water injection device for washing the washing liquid by spraying purified water (DI Water); And 상기 정제수를 건조시키는 건조 장치;A drying apparatus for drying the purified water; 를 포함하는 고속 텍스쳐링 시스템.High speed texturing system comprising a. 기판 흡착 다공질 척 상에 웨이퍼를 배치하는 단계;Placing the wafer on the substrate adsorption porous chuck; 이송부가 상기 기판 흡착 다공질 척을 이송하는 단계;A transfer unit transferring the substrate adsorption porous chuck; 웨이퍼 검사 장치가 상기 이송되는 기판 흡착 다공질 척 상의 상기 웨이퍼의 표면을 스캐닝하는 단계;A wafer inspection apparatus scanning the surface of the wafer on the transported substrate adsorption porous chuck; 고속 표면 가공 장치가 상기 스캐닝한 웨이퍼의 표면을 레이저로 가공하고, 퍼지 가스를 공급하여 가공 부산물을 제거하는 단계; 및A high speed surface processing apparatus laser processing the surface of the scanned wafer and supplying a purge gas to remove processing byproducts; And 웨이퍼 세정 장치가 상기 가공된 웨이퍼를 세정하는 단계;A wafer cleaning apparatus cleans the processed wafer; 를 포함하는 고속 텍스쳐링 방법.Fast texturing method comprising a.
PCT/KR2015/006629 2015-06-26 2015-06-29 High-speed texturing method and system Ceased WO2016208792A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150091448A KR20170001452A (en) 2015-06-26 2015-06-26 High speed texturing method and system
KR10-2015-0091448 2015-06-26

Publications (1)

Publication Number Publication Date
WO2016208792A1 true WO2016208792A1 (en) 2016-12-29

Family

ID=57585873

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2015/006629 Ceased WO2016208792A1 (en) 2015-06-26 2015-06-29 High-speed texturing method and system

Country Status (2)

Country Link
KR (1) KR20170001452A (en)
WO (1) WO2016208792A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050211680A1 (en) * 2003-05-23 2005-09-29 Mingwei Li Systems and methods for laser texturing of surfaces of a substrate
US20090275212A1 (en) * 2008-05-02 2009-11-05 Shinichi Kato Method and apparatus for processing semiconductor wafer after impurity implantation
US20100197116A1 (en) * 2008-03-21 2010-08-05 Imra America, Inc. Laser-based material processing methods and systems
US20120017989A1 (en) * 2010-08-24 2012-01-26 Pai-Chun Chang Metal and metal oxide surface texturing
WO2014158346A1 (en) * 2013-03-13 2014-10-02 Applied Materials, Inc. Laser ablation platform for solar cells

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050211680A1 (en) * 2003-05-23 2005-09-29 Mingwei Li Systems and methods for laser texturing of surfaces of a substrate
US20100197116A1 (en) * 2008-03-21 2010-08-05 Imra America, Inc. Laser-based material processing methods and systems
US20090275212A1 (en) * 2008-05-02 2009-11-05 Shinichi Kato Method and apparatus for processing semiconductor wafer after impurity implantation
US20120017989A1 (en) * 2010-08-24 2012-01-26 Pai-Chun Chang Metal and metal oxide surface texturing
WO2014158346A1 (en) * 2013-03-13 2014-10-02 Applied Materials, Inc. Laser ablation platform for solar cells

Also Published As

Publication number Publication date
KR20170001452A (en) 2017-01-04

Similar Documents

Publication Publication Date Title
US11462423B2 (en) Method and apparatus for cleaning semiconductor wafer
CN1156890C (en) Method and system for cleaning semiconductor wafer
WO2015133689A1 (en) Device and method for cleaning backside or edge of wafer
KR102418491B1 (en) Photomask Cleaning Processes
KR102119331B1 (en) Development unit, substrate processing apparatus, development method and substrate processing method
TWI452623B (en) Substrate processing apparatus and substrate processing method
US6900135B2 (en) Buffer station for wafer backside cleaning and inspection
KR100292935B1 (en) Substrate processing equipment
WO2014171649A1 (en) Method and apparatus for thinning wafer
KR20190041162A (en) Substrate treating apparatus and processing liquid nozzle inspecting method
CN116250070A (en) Masking Ring Kit for Plasma Etch Wafer Singulation Process
WO2016208792A1 (en) High-speed texturing method and system
KR20200127082A (en) Film removing method, substrate processing method, and substrate processing apparatus
JP2003504843A (en) Method for confirming pre-processing adjustment of wafer cleaning system
WO2016208790A1 (en) High-speed surface processing apparatus
KR20130054530A (en) Apparatus for large-area mask cleaning using laser and large-area mask cleaning system comprising the same
JPH0675187B2 (en) Reticle cleaning device
KR100917728B1 (en) Substrate Processing Apparatus and Substrate Processing Method
JPH11333394A (en) Method for washing substrate and washing apparatus
CN102007081A (en) Single-sided high throughput wet etching and wet processing apparatus and method
CN105669040B (en) The restraining device and suppressing method that optical damage component damage increases
JP5865153B2 (en) Substrate processing apparatus and substrate processing method
CN107838117A (en) The processing method for substrate of improving laser damage threshold
JPS61208051A (en) Reduced projecting and exposing device
CN202601581U (en) Defect detection device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15896426

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15896426

Country of ref document: EP

Kind code of ref document: A1