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WO2016158128A1 - Dispositif de détection de lumière et dispositif imageur - Google Patents

Dispositif de détection de lumière et dispositif imageur Download PDF

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Publication number
WO2016158128A1
WO2016158128A1 PCT/JP2016/055831 JP2016055831W WO2016158128A1 WO 2016158128 A1 WO2016158128 A1 WO 2016158128A1 JP 2016055831 W JP2016055831 W JP 2016055831W WO 2016158128 A1 WO2016158128 A1 WO 2016158128A1
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WO
WIPO (PCT)
Prior art keywords
filter
light
optical
optical filter
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2016/055831
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English (en)
Japanese (ja)
Inventor
貴司 中野
信義 粟屋
数也 石原
満 名倉
靖 永宗
時崎　高志
太田　敏隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Sharp Corp
Original Assignee
National Institute of Advanced Industrial Science and Technology AIST
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute of Advanced Industrial Science and Technology AIST, Sharp Corp filed Critical National Institute of Advanced Industrial Science and Technology AIST
Priority to JP2017509401A priority Critical patent/JPWO2016158128A1/ja
Publication of WO2016158128A1 publication Critical patent/WO2016158128A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/26—Reflecting filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • the present invention relates to a light detection device and an imaging device for imaging a subject.
  • an infrared camera is used to shoot a subject in an extremely low illuminance environment or a zero lux environment.
  • color information cannot be obtained, monochrome photography is performed.
  • color filters that transmit different color components respectively are provided on the light receiving surface, and a plurality of color component photoelectric elements that selectively receive color signals according to the intensity of the different color components upon receiving incident light.
  • a conversion element and an infrared light component transmission filter that transmits an infrared light component are provided on the light receiving surface, and an infrared light signal for correcting an infrared light component included in at least one of the plurality of color signals is received.
  • An infrared light component photoelectric conversion element that selectively outputs the color signal and the infrared light signal output from a color imaging device, and based on the infrared light signal, There has been proposed a color signal processing circuit that controls the gain of at least two signals and adjusts the white balance of the color signals (see, for example, Patent Document 1).
  • a solid-state imaging device having a plurality of pixels that receive visible light and infrared light from a subject and convert them into a visible light signal and an infrared light signal, respectively, and the solid-state imaging device for the visible light signal Storage means for storing correction data including correction values for each pixel, correction means for correcting a visible light signal output from the solid-state imaging device based on the correction data stored in the storage means, and the correction Forming the color image signal by obtaining chromaticity information from the corrected visible light signal, obtaining luminance information from the corrected visible light signal and the infrared light signal, and the correction data Has been proposed (see, for example, Patent Document 2).
  • an irradiation unit, an imaging unit, and a color specification setting unit are provided, the irradiation unit irradiates a subject with infrared rays having different wavelength intensity distributions, and the imaging unit has different wavelength intensity distributions reflected by the subject.
  • Image information representing each image is formed by capturing an image of the subject with each infrared ray
  • the color specification setting unit is a table for expressing each of the images represented by the formed image information with different single colors.
  • the color signal processing circuit of Patent Document 1 corrects the infrared light component included in the signal of the color component photoelectric conversion element using the signal of the infrared light component photoelectric conversion element, and is an extremely low illumination environment. It is difficult to shoot subjects in a zero-lux environment.
  • the image input device disclosed in Patent Document 2 must acquire a sufficient visible light signal, and it is difficult to photograph a subject in an extremely low illumination environment or a zero lux environment.
  • Patent Document 3 does not disclose a component according to an aspect of the present invention, an embodiment of the present invention, and a manufacturing method thereof.
  • An object of the present invention is to provide a light detection device and an imaging device for realizing an imaging system capable of color photographing of a subject in a low illumination environment, an extremely low illumination environment, and a zero lux environment.
  • a light detection device is a light detection device including at least one optical filter and a light sensor that receives light transmitted through the optical filter, At least one of the optical filters has a periodic structure that selectively transmits light in a predetermined wavelength range.
  • a light detection device that can be applied to an imaging system that enables color imaging of a subject in a low illumination environment, an extremely low illumination environment, and a zero lux environment.
  • FIG. 1 It is a figure which shows the structure of the camera which concerns on Embodiment 1 of this invention. It is a figure which shows the solid-state imaging system which concerns on Embodiment 1 of this invention.
  • (A)-(c) is a figure which shows the optical filter with which the camera which concerns on Embodiment 1 of this invention is provided.
  • (A) And (b) is a figure which shows the structure of the imaging part which concerns on Embodiment 1 of this invention. It is a figure which shows the structure of the image pick-up element which concerns on Embodiment 1 of this invention.
  • (A) to (d) are diagrams showing the spectral characteristics of the optical filter provided in the image sensor according to the first embodiment of the present invention.
  • FIG. 1 It is a figure which shows the structure of the imaging device which concerns on Embodiment 2 of this invention. It is a figure which shows another structure of the imaging device which concerns on Embodiment 2 of this invention.
  • (A) to (d) are diagrams showing the spectral characteristics of the optical filter in the photodetector and the imaging device according to the fourth embodiment of the present invention.
  • (A) And (b) is a figure which shows the spectral characteristic of the optical filter in the photon detection apparatus which concerns on Embodiment 4 of this invention, and an image pick-up element. It is a figure which shows the structure of the image pick-up element which concerns on Embodiment 5 of this invention.
  • (A) And (b) is a figure which shows the example of arrangement
  • (A) And (b) is a figure which shows another example of arrangement
  • FIGS. 1 to 6 The embodiment of the present invention will be described with reference to FIGS. 1 to 6 as follows.
  • a solid-state imaging system capable of capturing a color image under a zero lux environment will be described.
  • FIG. 2 is a diagram illustrating the solid-state imaging system 100 according to the first embodiment of the present invention. As shown in FIG. 2, the solid-state imaging system 100 includes an irradiation unit 101 and a camera 102.
  • the irradiation unit 101 irradiates the subject 104 with infrared rays 105. For example, infrared rays from a first infrared region to a third infrared region, which will be described later, are simultaneously irradiated from the irradiation unit 101.
  • the camera 102 receives the infrared ray 106 reflected by the subject 104 and captures an image of the subject 104.
  • FIG. 1 is a diagram illustrating an example of the configuration of the camera 102.
  • the camera 102 includes an imaging unit 1 (photodetection device, imaging device) and an analysis unit 4.
  • the imaging unit 1 is a device that detects an optical image of a subject, and includes an optical filter 2 and an optical sensor 3.
  • an image of the subject 104 can be taken by scanning the photodetection device and taking a projected image of the subject 104 (see FIG. 2). Further, when a plurality of types of light detection devices are used as the imaging unit 1, the projected image of the subject 104 is captured by scanning the plurality of types of light detection devices, respectively, thereby capturing the image of the subject 104 and generating a color image. Obtainable. Alternatively, an imaging device may be used as the imaging unit 1.
  • the analysis unit 4 is an image processing device that generates an image from the optical image detected by the imaging unit 1, and includes a color specification setting unit 4a and a color image generation unit 4b. As will be described later, the analysis unit 4 does not have to be provided in the camera 102, and may be provided in an image processing apparatus connected to the camera 102 so as to be communicable.
  • the light beam L1 reflected by the subject enters the optical filter 2, and the light sensor 3 receives the light beam L2 transmitted through the optical filter 2. Thereafter, in the imaging unit 1, an original image indicating an optical image received by the optical sensor 3 is generated and output to the analysis unit 4 as image information 107.
  • the color setting is performed by the color setting unit 4 a on the original image output from the imaging unit 1, and then a color image is generated from the color set image by the color image generation unit 4 b. Is done.
  • the optical filter 2 has a periodic structure in a direction perpendicular to the incident direction of the light beam L1, and has wavelength selectivity due to the periodic structure.
  • the basic structure of the optical filter 2 is preferably a hole array structure.
  • the hole array structure is a structure in which holes (through holes or non-through holes) having a diameter equal to or smaller than the maximum wavelength of light desired to be transmitted are arranged in a two-dimensional array.
  • the holes are preferably filled with a dielectric material.
  • the holes are preferably arranged in a honeycomb shape or an orthogonal matrix shape. However, other arrangements may be applied as long as the arrangement of holes has periodicity.
  • the optical filter 2 includes a conductor member at least partially.
  • the conductor member is a single conductor, has a reflectance of 70% or more in an arbitrary wavelength band, and is made of a metal element that is solid at room temperature, or an alloy thereof. It is preferable.
  • the plasma frequency of the material which comprises a conductor member is higher than the frequency of the light in a predetermined wavelength range (The wavelength range of the light selectively permeate
  • the said conductor member has little light absorption in the said predetermined wavelength range.
  • the optical filter 2 preferably has a subwavelength structure.
  • the sub-wavelength structure is a periodic structure having a period set equal to or shorter than the maximum wavelength of light that is desired to pass through the optical filter 2.
  • the sub-wavelength structure can be obtained by finely processing a thin film made of a conductive material having a plasma frequency in the ultraviolet wavelength band.
  • 3 (a) to 3 (c) are diagrams showing configurations of optical filters 21A to 21C that can be used as the optical filter 2, respectively.
  • the optical filter 21A shown in FIG. 3A is configured by arranging through holes 23A in a honeycomb shape in a conductive thin film 22A. Further, the optical filter 21B shown in FIG. 3B is configured by arranging the through holes 23B in an orthogonal matrix form in the conductive thin film 22B. That is, the periodic structure is formed in the optical filter 21A and the optical filter 21B by the through hole 23A or the through hole 23B.
  • the opening diameters of the through holes 23A and 23B may be equal to or smaller than the maximum wavelength of light desired to be transmitted.
  • the opening diameters of the through holes 23A and 23B are preferably in the range of, for example, 100 nm or more and 500 nm or less.
  • the thicknesses of the conductor thin films 22A and 22B are preferably about 100 nm to 200 nm, for example.
  • the distance D1 between the centers of the adjacent through holes 23A is the maximum light transmission wavelength. Therefore, by adjusting the distance D1, the wavelength range of the light transmitted through the optical filter 21A can be set. Similarly, in the optical filter 21B, the wavelength range of light transmitted through the optical filter 21B can be set by adjusting the distance D2 between the centers of the adjacent through holes 23B.
  • the optical filter 2 When incident light is incident on the surface of the optical filter 2, (i) the incident light and (ii) an electronic dense wave of a conductor member in the optical filter 2 are coupled to generate electromagnetic mode resonance.
  • the optical filter 2 transmits only light in a predetermined wavelength range by the resonance of the electromagnetic wave mode.
  • the periodic structure of the optical filter may be formed by a concave shape, a convex shape, or an air gap in addition to the through hole.
  • the optical filter 21C of FIG. 3C is configured by arranging a through hole 23C and a concave non-through hole 23CC in a honeycomb shape on a conductive thin film 22C.
  • the transmission wavelength range or transmission wavelength distribution of light can be controlled (or set) more accurately or finely. Can do.
  • FIG. 3C shows a plan view and a cross-sectional view (cross-sectional view taken along a cutting line A1-A2 in the plan view) of the optical filter 21C.
  • the through holes 23C and the non-through holes 23CC are periodically arranged.
  • the metal thin film of the optical filter 2 in the present embodiment is preferably made of a material selected from the group consisting of aluminum, copper, silver, gold, titanium nitride, zirconium nitride, nickel, cobalt, or alloys thereof. However, these are not limited as long as the conductive material has a plasma frequency higher than the frequency of light to be used.
  • the medium covering the metal thin film is preferably a non-dispersive dielectric material.
  • the dielectric material is desirably TiO 2 , SiN, AlN, Al 2 O 3 , HfO 2 , MgO, ZrO 2 , or SiO 2 , for example.
  • the manufacturing method of the optical filter 2 is as follows, for example. First, a conductive thin film is formed on a substrate. Subsequently, an opening (for example, a through hole 23A) is formed by photolithography and etching. At this time, in order to prevent problems such as side etching on the inner wall of the opening, it is preferable to process under dry etching conditions with high anisotropy.
  • the opening is filled with a dielectric material, and the dielectric material is laminated on the conductive thin film. Thereby, the optical filter 2 using a conductor member is obtained.
  • the imaging unit 1 includes a composite optical filter 5a composed of a plurality of optical filters 2a to 2d and an optical sensor array 6 composed of a plurality of optical sensors 3a to 3d.
  • the imaging part 1a provided with these may be sufficient.
  • At least one of the optical filters 2a to 2d has the characteristics of the optical filter 2 shown in FIG.
  • the optical filters 2a to 2d are arranged so as to correspond to the optical sensors 3a to 3d, respectively.
  • the light beam L3 reflected from the subject is incident on the composite optical filter 5a, and the light sensors 3a to 3d constituting the light sensor array 6 receive the light beams respectively transmitted through the optical filters 2a to 2d.
  • a space SP is provided between the optical filters 2a to 2d.
  • the space SP prevents the occurrence of interaction or crosstalk between light rays that ooze out from the respective side surfaces of the optical filters 2a to 2d.
  • the optical filters 2a to 2d are preferably composed of at least an organic color filter and a conductive material, and the organic color filter is preferably composed of a colorant-containing composition layer containing a dye or a pigment pigment.
  • the organic color filter preferably includes an organic member at least partially, and the organic member preferably includes a colorant.
  • the organic color filter transmits light in other wavelength ranges because the organic material absorbs light energy in a predetermined wavelength range.
  • the optical filter transmits light in a predetermined wavelength range in a resonant manner by the processed shape.
  • the optical filter can finely control the transmission wavelength range. However, when the optical filter is manufactured, ultrafine processing is required. On the other hand, although it is relatively difficult to control the transmission wavelength range of the organic color filter, a desired wavelength range can be selected by appropriately selecting a material. In addition, the organic color filter is relatively easy to manufacture.
  • the imaging unit 1 includes a composite optical filter 5b composed of optical filters 2a to 2d and a spacer member 7, and an optical sensor array 6 composed of optical sensors 3a to 3d.
  • the imaging part 1h provided with may be sufficient.
  • the light sensor 3a to 3d constituting the light sensor array 6 receives the light beam L3 reflected by the subject incident on the composite optical filter 5b and transmitted through the optical filters 2a to 2d.
  • the spacer member 7 prevents the occurrence of interaction or crosstalk between light rays that ooze out from the respective side surfaces of the optical filters 2a to 2d, similarly to the space SP in the imaging unit 1a.
  • the composite optical filter 5a or 5b includes a first optical filter that transmits the first near-infrared light of the incident light, a second optical filter that transmits the second near-infrared light of the incident light, and the incident light. And a third optical filter that transmits the third near-infrared light.
  • the composite optical filter 5a or 5b preferably includes at least three optical filters that selectively transmit infrared rays in three different wavelength regions defined by dividing a predetermined infrared wavelength region into three. .
  • the assumed near-infrared wavelength region is divided into four parts from the first near infrared to the fourth near infrared, and the optical filters 2a to 2d are transmitted through the first near infrared to the fourth near infrared, respectively.
  • An optical filter to a fourth optical filter may be used. Note that the wavelength range of light selectively transmitted through the optical filters 2a to 2d corresponds to the wavelength ranges of a plurality of infrared rays irradiated from the irradiation unit 101.
  • FIG. 5 is a diagram illustrating a configuration of an imaging element 11 ⁇ / b> A (imaging unit) as an example of the imaging unit 1.
  • an imaging element 11A may be used as the imaging unit 1.
  • the image pickup device 11A includes three types of optical filters (first filter 86a to third filter 86c) having different transmission wavelength ranges as the optical filter 2.
  • the imaging element 11 ⁇ / b> A is provided with an imaging area 52 and an optically ineffective area 53.
  • the imaging area 52 pixels 21a, 21b and 21c are arranged.
  • the pixel 21 d is arranged in the optically ineffective area 53.
  • the pixels 21a to 21d are adjacent to each other.
  • a case where a surface irradiation type CCD (Charge Coupled Device) type solid-state imaging device is employed as the imaging device 11A is illustrated.
  • a photoelectric conversion element portion (a signal wiring layer 85 and a photoelectric conversion element layer 84 to be described later) may be a surface irradiation type CMOS (Complementary Metal Oxide Semiconductor) type solid-state imaging device.
  • CMOS Complementary Metal Oxide Semiconductor
  • a back-illuminated CCD type or CMOS type solid-state imaging device may be employed.
  • Each of the pixels 21a to 21d is configured by laminating an on-chip microlens 81, a passivation layer 82, an optical filter layer 86, a light shielding film layer 83, a signal wiring layer 85, and a photoelectric conversion element layer 84 in order from the upper side of FIG. Has been.
  • the on-chip microlens 81 is an optical element for condensing light on the photoelectric conversion elements 84a to 4d of the pixels 21a to 21d.
  • the passivation layer 82 is a layer provided to protect the optical filter layer 86, the light shielding film layer 83, the signal wiring layer 85, and the photoelectric conversion element layer 84. By providing the passivation layer 82, the quality of an image (original image described later) obtained based on the charges output from the pixels 21a to 21c in the imaging region 52 is ensured.
  • the light shielding film layer 83 includes a light shielding film 83d containing a metal material having a light shielding property.
  • the metal material is, for example, Al, an alloy of Al and Cu, an alloy of Al and Si, Cu, W, or Ag.
  • the light shielding film 83d is provided so as to cover all the openings of the pixels 21d in the optically ineffective area 53. Thereby, no light is incident on the pixel 21d.
  • the optical filter layer 86 includes a first filter 86a, a second filter 86b, and a third filter 86c.
  • the first filter 86a to the third filter 86c are arranged so as to correspond to the pixels 21a to 21c in the imaging region 52, respectively. Further, each of the first filter 86a to the third filter 86c has a periodic structure. For example, like the optical filter 61A, a plurality of openings are provided in a honeycomb shape.
  • the photoelectric conversion element layer 84 has photoelectric conversion elements 84a, 84b, 84c, and 84d.
  • the photoelectric conversion elements 84a to 84d correspond to the pixels 21a to 21d, respectively. These photoelectric conversion elements 84a to 84d convert the received light into electric charges.
  • the pixels 21a to 21d are electrically separated by the element separation layer.
  • the signal wiring layer 85 is provided with wiring for reading charges accumulated in the pixels 21 a to 21 d in the photoelectric conversion element layer 84.
  • FIG. 6A is a graph showing an example of spectral characteristics of the first filter 86a to the third filter 86c.
  • the horizontal axis of the graph is the wavelength (nm) of light
  • the vertical axis of the graph is the light transmittance (arbitrary unit).
  • the first filter 86a transmits the red region R and the first infrared region IR1.
  • the red region R is a wavelength region of red light as visible light.
  • the first infrared region IR1 is a wavelength region of near infrared light as invisible light.
  • the second filter 86b transmits the blue region B and the second infrared region IR2.
  • the blue region B is a wavelength region of blue light as visible light.
  • the second infrared region IR2 is a wavelength region of near infrared light as invisible light, and is a wavelength region having a longer wavelength than the first infrared region IR1.
  • the third filter 86c transmits the green region G and the third infrared region IR3.
  • the green region G is a wavelength region of green light as visible light.
  • the third infrared region IR3 is a wavelength region of near infrared light as invisible light, and is a wavelength region having a longer wavelength than the second infrared region IR2.
  • the lights that pass through the first filter 86a to the third filter 86c are referred to as a first light beam to a third light beam, respectively.
  • the imaging unit 1 captures the first image to the third image (original image) as the image information 107 (see FIG. 2) by receiving each of the first light beam to the third light beam.
  • the image information 107 indicates the distribution of the intensities of the first to third rays reflected from the subject. Therefore, if each original image represented by the image information 107 is displayed as it is on a display or printing, it is displayed in a single color or a mono color.
  • the single color means that it is expressed by the brightness / density of only one color.
  • a position where the intensity of the first light beam is strong is expressed by bright red
  • a position where the intensity of the first light beam is weak is expressed by dark red.
  • an image in which the first image is monochromatically expressed in red is obtained.
  • the color setting unit 4a can generate a single color image by referring to information (that is, color information) indicating which color of each original image represented by the image information 107 is represented. it can.
  • the color specification information may be stored in the storage unit 50 (see FIG. 1) that can be used by the color specification setting unit 4a.
  • the imaging unit 1 may acquire color specification information from the storage unit 50 and include the color specification information in the image information 107 and output it to the analysis unit 4.
  • the analysis unit 4 does not need to be provided in the camera 102, and may be provided in an image processing device (for example, a terminal device having a display unit) different from the camera 102.
  • image information 107 including color specification information is transmitted to the image processing apparatus.
  • the color setting unit 4a performs the color setting of the first image to the third image
  • the color image generation unit 4b performs a process of generating a color image from the first image to the third image set with the color setting.
  • the color filter of the imaging unit 1 (i) a red organic color filter having a transmission wavelength of 600 nm or more, (ii) a blue organic color filter having transmission wavelengths of 400 nm to 500 nm and 800 nm or more, and (iii)
  • the optical filter of the present embodiment having a transmission wavelength of 500 nm to 600 nm and 900 nm or more, a color image of the subject can be generated.
  • the filter (iii) is a metal / dielectric / metal (MIM, Metal Insulator Metal) filter described later.
  • the signal of light transmitted through the red organic color filter is red
  • the signal of light transmitted through the blue organic color filter is blue
  • the signal of light transmitted through the MIM filter Are colored green.
  • the surrounding environment is dark, such as at night, irradiate infrared light toward the subject. Then, the difference between the signal of the light transmitted through the red organic color filter and the signal of the light transmitted through the blue organic color filter is red, the signal of the light transmitted through the blue organic color filter and the light transmitted through the MIM filter The difference from the signal is displayed in blue, and the light signal transmitted through the MIM filter is displayed in green.
  • FIG. 7 is a diagram illustrating the imaging unit 1b.
  • an imaging unit 1b illustrated in FIG. 7 may be used.
  • the imaging unit 1b includes a composite optical filter array 8a (optical filter array) and an optical sensor array 6a.
  • Each of the optical filters 2a to 2d constituting the composite optical filter array 8a is arranged in an array so as to correspond to each of the optical sensors 3a to 3d constituting the optical sensor array 6a.
  • the light beam reflected by the subject enters the composite optical filter array 8a, and the light sensors that form the optical sensor array 6a receive the light beams that have passed through the optical filters that constitute the composite optical filter array 8a.
  • an imaging unit 1b is used as the imaging unit of the camera 102, a color image can be obtained without causing the imaging unit 1b to scan the subject.
  • Each of the optical filters 2a to 2d constituting the composite optical filter array 8a is preferably an optical filter having a different transmission wavelength range.
  • the optical filters 2a to 2d shown in FIG. 4A may be used as the optical filters 2a to 2d constituting the composite optical filter array 8a.
  • the composite optical filter array 8a may be realized by combining a plurality of composite optical filters 5b shown in FIG.
  • each of the optical filters 2a to 2d is preferably made of a conductor member and has a periodic structure shorter than the maximum period of light transmitted through each of the optical filters 2a to 2d.
  • FIG. 8 is a diagram illustrating the imaging unit 1c.
  • An imaging unit 1c illustrated in FIG. 8 may be used as the imaging unit of the camera 102.
  • the imaging unit 1c includes a lens array 9a in addition to the configuration of the imaging unit 1b.
  • the light reflected from the subject enters the composite optical filter array 8a via the lens array 9a, and the light sensors that constitute the optical sensor array 6a use the light sensors that pass through the optical filters constituting the composite optical filter array 8a. Receive light.
  • the lens array 9a is preferably composed of lenses that are periodically arranged.
  • the lenses constituting the lens array 9a are arranged so as to correspond to the optical filters 2a to 2d constituting the composite optical filter array 8a and the optical sensors 3a to 3d constituting the optical sensor array 6a.
  • the sensitivity of the optical sensor can be improved by the light condensing effect by the lens array 9a.
  • light is collected at the center of each optical filter, light leakage to the optical filter adjacent to the optical filter can be reduced.
  • the infrared rays 105 of the first infrared region to the third infrared region are simultaneously irradiated from the irradiation unit 101.
  • the irradiation unit 101 is not substantially irradiated with infrared rays having respective wavelength intensity distributions. The irradiation may be performed at different times.
  • the length of time that infrared rays having a certain wavelength intensity distribution is emitted is different from other wavelengths. It means that it is shorter than the time of irradiation with infrared rays having an intensity distribution.
  • the infrared rays 105 having different wavelength intensity distributions may be simultaneously irradiated, the infrared rays 105 having different wavelength intensity distributions may be irradiated to the subject 104 after being modulated with different frequencies.
  • the infrared rays 106 reflected by the subject 104 are intensity-modulated by different frequencies and become a set of infrared rays having different wavelength intensity distributions.
  • the reflected infrared rays 106 having different wavelength intensity distributions are separated.
  • the first filter to the third filter may have characteristics as shown in any of (b) to (d) of FIG.
  • FIG. 6B is a graph showing another example of the spectral characteristics of the first filter to the third filter. 6B is different from FIG. 6A only in the spectral characteristic of the first filter. Specifically, in FIG. 6B, the red region R and the first infrared region IR1 are provided as a continuous wavelength region in the first filter. Thereby, a brighter first image can be taken.
  • FIG. 6 is a graph showing another example of the spectral characteristics of the first filter to the third filter. 6C differs from FIG. 6A only in the spectral characteristics of the second light filter. Specifically, the second filter in FIG. 6C transmits only the blue region B.
  • FIG. 6D is a graph showing another example of the spectral characteristics of the first filter to the third filter. As shown in FIG. 6D, even when the second filter transmits only the blue region B, the red region R and the first infrared region IR1 are provided as continuous wavelength regions in the first filter. May be.
  • the spectral characteristics of the first to third filters are not limited to those described above.
  • the spectral characteristic may be any of the following (Configuration A1) to (Configuration A5), for example.
  • the first filter transmits the red region R and the first infrared region IR1.
  • the second filter transmits the green region G and the second infrared region IR2.
  • the third filter transmits the blue region B and the third infrared region IR3.
  • the first filter transmits the green region G and the first infrared region IR1.
  • the second filter transmits the blue region B and the second infrared region IR2.
  • the third filter transmits the red region R and the third infrared region IR3.
  • the first filter transmits the green region G and the first infrared region IR1.
  • the second filter transmits the red region R and the second infrared region IR2.
  • the third filter transmits the blue region B and the third infrared region IR3.
  • the first filter transmits the blue region B and the first infrared region IR1.
  • the second filter transmits the red region R and the second infrared region IR2.
  • the third filter transmits the green region G and the third infrared region IR3.
  • the first filter transmits the blue region B and the first infrared region IR1.
  • the second filter transmits the green region G and the second infrared region IR2.
  • the third filter transmits the red region R and the third infrared region IR3.
  • the first to third filters may have spectral characteristics shown in FIGS. 9A to 9D.
  • FIG. 9A is a graph illustrating the above-described (Configuration A1).
  • the red wavelength region R and the first infrared region IR1 in the first filter may be provided as a continuous wavelength region.
  • the second filter may transmit only the green region G.
  • the red wavelength region R and the first infrared region IR1 are continuous wavelength regions in the first filter. It may be provided.
  • the color specification setting unit 4a sets each pixel of the first image generated by the light transmitted through the first filter to “R”.
  • each pixel of the second image generated by the light transmitted through the second filter is expressed by “G”, and
  • the three images are represented by “B”.
  • the first to third filters may have characteristics as shown in FIG. 10 (a).
  • the first to third filters in FIG. 10A block light in the wavelength regions of the red region R, the green region G, and the blue region B.
  • the first filter transmits only the first infrared region IR1
  • the second filter transmits only the second infrared region IR2
  • the third filter transmits only the third infrared region IR3.
  • the color specification setting unit 4a converts the first image to the third image generated by the light transmitted through the first filter to the third filter to “R”. ”,“ G ”,“ B ”.
  • two types of infrared rays (first light beam and second light beam) having different wavelength intensity distributions may be irradiated on the subject, and the reflected infrared light may be split into two light beams and detected.
  • two optical filters, the first filter and the second filter may be provided as optical filters corresponding to the first light beam and the second light beam, respectively.
  • FIG. 10B is a graph showing another example of the spectral characteristics of the first filter and the second filter.
  • the first filter and the second filter in FIG. 10B block light in the wavelength regions of the red region R, the green region G, and the blue region B.
  • the color specification setting unit 4a may color the first image and the second image generated by the light transmitted through the first filter and the second filter with “R” and “G”, respectively.
  • FIG. 11 is a diagram illustrating a configuration of the image sensor 11B (image pickup unit) in the present embodiment.
  • each of the pixels 21a to 21d is in order from the upper side, the on-chip microlens 81, the passivation layer 82, the light shielding film layer 83B, the signal wiring layer 85, and the photoelectric conversion element layer 84. Are laminated.
  • the image sensor 11B of FIG. 11 is realized by replacing (i) the light shielding film layer 83 with the light shielding film layer 83B and (ii) excluding the optical filter layer 86 in the image sensor 11A of the first embodiment. This is a configuration.
  • the light shielding film layer 83B has light shielding films 83a, 83b, 83c, and 83d containing a dielectric material having light shielding properties.
  • a dielectric material a material similar to the metal material of the light shielding film layer 83 described above can be used.
  • the light shielding film 83 d is provided so as to cover all the openings of the pixels 21 d in the optically ineffective region 53.
  • the light shielding films 83a to 83c correspond to the pixels 21a to 21c in the imaging region 52, respectively.
  • a plurality of openings made of a conductive material layer are periodically provided in one or two dimensions.
  • each of the light shielding films 83a to 83c has a periodic structure.
  • a plurality of openings are provided in a honeycomb shape. With the structure of the opening, the light shielding films 83a to 83c are provided with a spectral function as an optical filter.
  • the light shielding film layer 83 ⁇ / b> B of the image sensor 11 ⁇ / b> B is configured to have both (i) a light shielding function in the optically ineffective area 53 and (ii) a spectral function as an optical filter in the imaging area 52. .
  • the light shielding film 83d in the optically ineffective area 53 and the optical filters (light shielding films 83a to 83c) in the imaging area 52 are formed of the same material in one light shielding film layer 83B. . Therefore, there are few changes from the conventional manufacturing process, and the optical filter can be manufactured with a small number of man-hours.
  • the conductor material constituting the light shielding film layer 83B Al, an alloy of Al and Cu, an alloy of Al and Si, Cu, W, Ag, Au, and the like are suitable as in the case of the light shielding film layer 83.
  • FIG. 12 is a figure which shows the example of arrangement
  • FIG. A plurality of pixels 21 are arranged in the imaging region 52.
  • a pixel array surrounded by a thick solid line is configured by the four pixels 21.
  • a pixel indicates a single element of an image sensor and is a minimum unit having color information.
  • One of the optical filters ⁇ 1 to ⁇ 3 is assigned to each pixel.
  • a pixel array surrounded by a thick solid line is referred to as a pixel array unit 12. All the optical filters ⁇ 1 to ⁇ 3 are assigned to each pixel array unit 12.
  • FIG. 12A shows a case where all of the optical filters ⁇ 1 to ⁇ 3 are assigned to each pixel array unit 12. However, an optical filter different from the one assigned in FIG. 12A among the optical filters ⁇ 1 to ⁇ 3 is assigned to the pixel to which the optical filter ⁇ 1, ⁇ 2 or ⁇ 3 is assigned in FIG. It does not matter.
  • the optical filter that shows the spectral characteristics of the first light beam is the optical filter ⁇ 1
  • the optical filter that shows the spectral characteristics of the second light beam is the optical filter ⁇ 2
  • the optical filter that shows the spectral characteristics of the third light beam is the optical filter ⁇ 3
  • Each of the optical filters ⁇ 1 and ⁇ 3 is assigned to one pixel for each pixel array.
  • the optical filter ⁇ 2 is assigned to two non-adjacent pixels for each pixel array.
  • one pixel 21 may be associated with one type of optical filter. That is, the pixel 21 and the optical filter may correspond one to one.
  • one type of optical filter may be associated with the plurality of pixels 21. That is, an optical filter using one type or a plurality of types of conductor members may be arranged in a pixel array composed of a plurality of N ⁇ M single pixels (where N and M are one or more). Is an integer).
  • the aspect ratio of the pixel array may not be 1: 1.
  • FIG. 13A illustrates a configuration in which the aspect ratio of the pixel array is 1: 3
  • FIG. 13B illustrates a configuration in which the aspect ratio of the pixel array is 3: 1.
  • each optical filter ⁇ 1 to ⁇ 3 having different transmission wavelength ranges is illustrated, but two types or four or more types of optical filters may be provided.
  • the correspondence relationship between each optical filter and the spectral characteristics is not limited to the above. The corresponding relationship may be, for example, any one of the following (Configuration B1) to (Configuration B5).
  • the optical filter ⁇ 1 shows the spectral characteristics of the first light beam.
  • the optical filter ⁇ 2 shows the spectral characteristics of the third light beam.
  • the optical filter ⁇ 3 shows the spectral characteristics of the second light beam.
  • the optical filter ⁇ 1 shows the spectral characteristics of the third light beam.
  • the optical filter ⁇ 2 shows the spectral characteristics of the second light beam.
  • the optical filter ⁇ 3 shows the spectral characteristics of the first light beam.
  • the optical filter ⁇ 1 shows the spectral characteristics of the second light beam.
  • the optical filter ⁇ 2 shows the spectral characteristics of the third light beam.
  • the optical filter ⁇ 3 shows the spectral characteristics of the first light beam.
  • the optical filter ⁇ 1 shows the spectral characteristics of the second light beam.
  • the optical filter ⁇ 2 exhibits the spectral characteristics of the first light beam.
  • the optical filter ⁇ 3 shows the spectral characteristics of the third light beam.
  • the optical filter ⁇ 1 shows the spectral characteristics of the third light beam.
  • the optical filter ⁇ 2 exhibits the spectral characteristics of the first light beam.
  • the optical filter ⁇ 3 shows the spectral characteristics of the second light beam.
  • FIG. 14 is a diagram schematically showing the optical filter 86A of the present embodiment, in which (a) is a side view and (b) is a front view.
  • the optical filter 86A includes a metal thin film 7, a dielectric film 8, and an optical filter covering material 10.
  • FIG. 15 is a SEM (Scanning Electron Microscope) photograph of the optical filter 86A using the conductor member.
  • the optical filter 86A of the present embodiment has a different opening shape from the optical filters of the above-described embodiments.
  • the opening is provided as a one-dimensional line shape. Note that the openings are two-dimensionally arranged corresponding to the plurality of photoelectric conversion elements.
  • the metal thin film 7 is an Al film having a thickness of 40 nm
  • the dielectric film 8 is a TiO 2 film having a thickness of 100 nm.
  • a metal / dielectric / metal layer MIM (Metal Insulator Metal) layer
  • the dielectric film 8 is sandwiched between the metal thin films 7 is formed as a line and space pattern.
  • the metal thin film 7 and the dielectric film 8 are covered with an optical filter covering material 10.
  • the metal thin film 7 is arranged perpendicular to the light incident direction, so that surface plasmon wave resonance occurs on the surface of the metal thin film 7 and has wavelength selectivity. Further, when the refractive index of the dielectric film 8 is increased, stronger resonance of the surface plasmon wave is generated, so that the wavelength selectivity of the optical filter is improved.
  • the optical filter 86A in FIG. 14 may be manufactured using a conductor member similar to the optical filter layer 86 of the image sensor 11A in FIG.
  • FIG. 14 shows the period P of the opening pattern. 14 indicates that the same structure continues in the left-right direction in FIG.
  • the opening width (space width) and the period P of the optical filter 86A may be equal to or less than the maximum wavelength of light desired to be transmitted.
  • the space width is desirably a length in the range of 50 nm to 300 nm, for example.
  • a wavelength range that passes through the optical filter 86A is set. For example, if the wavelength of light desired to be transmitted is 350 nm to 1100 nm, the period P can be set to 175 nm to 550 nm.
  • the optical filter covering material 10 is preferably made of a dielectric material. Further, the refractive index of the optical filter covering material 10 is desirably 0.5 or more smaller than the refractive index of the dielectric film 8.
  • the material of the optical filter covering material 10 is desirably a non-dispersive dielectric material (for example, TiO 2 , SiN, AlN, Al 2 O 3 , HfO 2 , MgO, ZrO 2 , or SiO 2 ). Further, when the material of the optical filter covering material 10 is SiO 2 , the material of the dielectric film 8 is desirably TiO 2 , SiN, AlN, HfO 2 , or ZrO 2 .
  • the metal thin film 7 is preferably a material selected from the group consisting of aluminum, copper, silver, gold, titanium nitride, zirconium nitride, nickel, cobalt, or alloys thereof.
  • the metal thin film 7 may be made of a material selected from metal oxide transparent conductive materials that are transparent in the visible light region and exhibit high reflection characteristics (plasma frequency of 380 THz or less) in the infrared.
  • An example of the material is an In 2 O 3 system represented by ITO (Indium Tin Oxide) (Sn: In 2 O 3 ), AZO (Aluminum-doped Zinc Oxide, aluminum-doped zinc oxide) (Al: ZnO), GZO (Gallium-doped Zinc Oxide) (Ga: ZnO), BZO (Boron-doped Zinc Oxide) (B: ZnO), IZO (Indium Zinc Oxide) ) A ZnO-based or InGaZnOx-based metal oxide transparent conductive material typified by (In: ZnO).
  • optical filter 86A it is not necessary that all slits provided in the slit structure penetrate the conductor thin film.
  • some slits may be formed by non-through holes having a concave structure on the conductor.
  • an optical filter having a spectroscopic function can be realized.
  • the manufacturing method of the optical filter 86A is, for example, as follows. First, a metal thin film 7 is formed on a substrate, and a dielectric film 8 is formed thereon. Then, a metal thin film 7 is further formed on the dielectric film 8.
  • an opening is formed by photolithography and etching.
  • the optical filter covering material 10 is filled in the opening and laminated on the metal thin film 7. Thereby, the optical filter 86A is obtained.
  • the configuration of the optical filter of the present embodiment is not limited only to the configuration of the optical filter 86A described above.
  • the design parameters of the optical filter may be changed as appropriate.
  • FIG. 16 is a diagram illustrating a configuration of an image sensor 11C (image pickup unit) in the present embodiment.
  • each of the pixels 21a to 21d includes, in order from the top, an on-chip microlens 81, a passivation layer 82, an optical filter layer 86C, a light shielding film layer 83, a signal wiring layer 85, and A photoelectric conversion element layer 84 is laminated.
  • the image sensor 11C of the present embodiment has a configuration realized by replacing the optical filter layer 86 with the optical filter layer 86C in the image sensor 11A of the first embodiment.
  • the optical filter layer 86C of the present embodiment is an optical filter layer that can be manufactured by a general-purpose semiconductor process.
  • the optical filter layer 86C is configured by laminating a first optical filter layer 87, a passivation layer 82a, and a second optical filter layer 88 in order from the upper side. Note that the passivation layer 82a between the first optical filter layer 87 and the second optical filter layer 88 may be omitted.
  • the first optical filter layer 87 is preferably made of a colorant-containing composition containing a dye or a pigment pigment.
  • the first optical filter layer 87 includes a first filter 87a, a second filter 87b, and a third filter 87c.
  • the first filter 87a to the third filter 87c are, for example, organic color filters, and are arranged so as to correspond to the pixels 21a to 21c in the imaging region 52, respectively.
  • the second optical filter layer 88 is preferably made of a conductive material.
  • the second optical filter layer 88 includes a first filter 88a, a second filter 88b, and a third filter 88c. These first filter 88a to third filter 88c are the same as the first filter 86a to third filter 86c described above.
  • each spectral characteristic shown in (a) to (d) of FIG. 6, (a) to (d) of FIG. 9, and (a) to (b) of FIG. It may be realized by the first filter 87a to the third filter 87c of the filter layer 87 and the first filter 88a to the third filter 88c of the second optical filter layer 88.
  • each spectral characteristic may be realized as the following configurations (1) to (10).
  • each of the first filter 87a to the third filter 87c of the first optical filter layer 87 may be an organic color filter.
  • the first filter 87a transmits near infrared light having a wavelength of about 700 nm to 800 nm.
  • the second filter 87b is a blue color filter that transmits blue light, and the third filter 87c is a green color filter that transmits green light.
  • the first filter 88a is formed by forming a pattern having a hole diameter of 225 nm and a period of 550 nm on Al having a film thickness of 150 nm (see FIG. 3).
  • the second filter 88b is formed by forming a pattern having a line width of 126 nm and a space width of 154 nm on an MIM layer composed of “Al with a thickness of 40 nm / SiN with a thickness of 100 nm / Al with a thickness of 40 nm” ( (See FIG. 14).
  • the third filter 88c is a pattern in which a pattern having a line width of 126 nm and a space width of 154 nm is formed on an MIM layer made of “Al with a thickness of 40 nm / SiN with a thickness of 100 nm / Al with a thickness of 40 nm”.
  • the first filter 87a to the third filter 87c of the first optical filter layer 87 may all be organic color filters.
  • the first filter 87a is a red color filter that transmits red light
  • the second filter 87b is a blue color filter that transmits blue light
  • the third filter 87c is a green color filter that transmits green light.
  • the first filter 88a and the second filter 88b of the second optical filter layer 88 may not be provided.
  • the third filter 88c is obtained by forming a pattern having a line width of 126 nm and a space width of 154 nm on the MIM layer composed of “Al with 40 nm thickness / SiN with 100 nm thickness / Al with 40 nm thickness”.
  • the second filter 87b of the first optical filter layer 87 may not be provided. Further, both the first filter 87a and the third filter 87c may be organic color filters.
  • the first filter 87a transmits near infrared light having a wavelength of about 700 nm to 800 nm.
  • the third filter 87c is a green color filter that transmits green light.
  • the first filter 88a is obtained by forming a pattern having a hole diameter of 225 nm and a period of 550 nm on Al having a film thickness of 150 nm.
  • the second filter 88b is formed by forming a pattern having a hole diameter of 140 nm and a period of 280 nm on Al having a thickness of 150 nm.
  • the third filter 88c is a pattern in which a pattern having a line width of 126 nm and a space width of 154 nm is formed on an MIM layer made of “Al with a thickness of 40 nm / SiN with a thickness of 100 nm / Al with a thickness of 40 nm”.
  • the second filter 87b of the first optical filter layer 87 may not be provided. Further, both the first filter 87a and the third filter 87c may be organic color filters.
  • the first filter 87a is a red color filter that transmits red light.
  • the third filter 87c is a combination of a green color filter that transmits green light and an organic color filter that transmits near-infrared light having a wavelength of about 900 nm or more.
  • the first filter 88a of the second optical filter layer 88 may not be provided.
  • the second filter 88b is obtained by forming a pattern having a hole diameter of 140 nm and a period of 280 nm on Al having a film thickness of 150 nm.
  • the third filter 88c is a pattern in which a pattern having a line width of 126 nm and a space width of 154 nm is formed on an MIM layer made of “Al with a thickness of 40 nm / SiN with a thickness of 100 nm / Al with a thickness of 40 nm”.
  • any of the first filter 87a to the third filter 87c of the first optical filter layer 87 may be an organic color filter.
  • the first filter 87a transmits near infrared light having a wavelength of about 700 nm to 800 nm.
  • the second filter 87b is a blue color filter that transmits blue light.
  • the third filter 87c is a combination of a green color filter that transmits green light and an organic color filter that transmits near-infrared light having a wavelength of about 900 nm or more.
  • the second filter 88b and the third filter 88c of the second optical filter layer 88 may not be provided.
  • the first filter 88a is obtained by forming a pattern having a hole diameter of 225 nm and a period of 550 nm on Al having a thickness of 150 nm.
  • the first filter 87a to the third filter 87c of the first optical filter layer 87 may all be organic color filters.
  • the first filter 87a is a red color filter that transmits red light
  • the second filter 87b is a blue color filter that transmits blue light.
  • the third filter 87c is a combination of a green color filter that transmits green light and an organic color filter that transmits near-infrared light having a wavelength of about 900 nm or more.
  • the first filter 88a to the third filter 88c of the second optical filter layer 88 may not be provided.
  • the first filter 87a to the third filter 87c of the first optical filter layer 87 may all be organic color filters.
  • the first filter 87a transmits near infrared light having a wavelength of about 700 nm to 800 nm.
  • the second filter 87b is a blue color filter that transmits blue light.
  • the third filter 87c is a combination of a green color filter that transmits green light and an organic color filter that transmits near-infrared light having a wavelength of about 900 nm or more.
  • the second filter 88b and the third filter 88c of the second optical filter layer 88 may not be provided.
  • the first filter 88a is obtained by forming a pattern having a hole diameter of 225 nm and a period of 550 nm on Al having a thickness of 150 nm.
  • any of the first filter 87a to the third filter 87c of the first optical filter layer 87 may be an organic color filter.
  • the first filter 87a is a red color filter that transmits red light
  • the second filter 87b is a blue color filter that transmits blue light.
  • the third filter 87c is a combination of a green color filter that transmits green light and an organic color filter that transmits near-infrared light having a wavelength of about 900 nm or more.
  • the first filter 88a to the third filter 88c of the second optical filter layer 88 may not be provided.
  • any of the first to third filters 87a to 87c of the first optical filter layer 87 may be an organic color filter.
  • the first filter 87a transmits near infrared light having a wavelength of about 700 nm to 800 nm
  • the second filter 87b transmits near infrared light having a wavelength of about 700 nm to 800 nm
  • the third filter 87c is about 900 nm. Transmits near-infrared light having the above wavelength.
  • the first filter 88a to the third filter 88c of the second optical filter layer 88 do not have to be provided.
  • the third filter 87c of the first optical filter layer 87 may not be provided. Further, both the first filter 87a and the second filter 87b may be organic color filters.
  • the first filter 87a transmits near infrared light having a wavelength of about 700 nm to 800 nm, and the second filter 87c transmits near infrared light having a wavelength of about 900 nm or more.
  • the first filter 88a to the third filter 88c of the second optical filter layer 88 may not be provided.
  • FIG. 17 illustrates spectral characteristics of the optical filter according to one embodiment of the present invention. Specifically, FIG. 17 is a diagram illustrating an example of spectral characteristics of the optical filter of FIG.
  • FIG. 18 is a diagram showing a sensitivity curve of one pixel in a conventional solid-state imaging device using an organic color filter.
  • the main transmission wavelengths correspond to red, green, and blue on each of the light receiving elements mainly composed of silicon.
  • any solid-state imaging device corresponding to each color of red, green, and blue shows the same light receiving sensitivity with respect to light having a wavelength of about 820 nm or more.
  • the conventional organic color filter cannot satisfy the spectral characteristics required for the optical filter according to one embodiment of the present invention.
  • FIG. 17 shows (i) an example of spectral characteristics of an optical filter according to an embodiment of the present invention (an optical filter using a conductor member), and (ii) the optical filter combined with an organic color filter. The respective spectral characteristics of the first to third filters are shown.
  • the first filter has a red region R and a first infrared region IR1
  • the second filter has a blue region B and a second infrared region IR2
  • the third filter transmits the green region G and the third infrared region IR3, respectively.
  • FIG. 17 the transmission spectrum of a single optical filter using a conductor member is shown by both a solid line and a broken line.
  • the organic color filter (first optical filter layer 87) and the optical filter using the conductor member (second optical filter layer 88) are provided as shown in FIG. 16, the wavelength indicated by the broken line.
  • the light in the range is shielded by an organic color filter disposed above the optical filter using the conductor member. For this reason, the optical filter using the conductor member transmits only light in the wavelength range indicated by the solid line.
  • a metal / dielectric / metal layer in which a SiN film having a thickness of 100 nm is sandwiched by an Al film having a thickness of 40 nm is formed as a line and space pattern.
  • the material that covers the optical filter is SiO 2 .
  • the line & space pattern for separating each of the first light beam to the third light beam is as follows (Configuration C).
  • a pattern having a period of 400 nm and an average slit width of 200 nm is provided for the first light beam.
  • a pattern having a period of 280 nm and an average slit width of 150 nm is provided for the second light beam.
  • a pattern having a period of 420 nm and an average slit width of 110 nm is provided for the third light beam.
  • the manufacturing method of the optical filter of this embodiment is as follows, for example. First, an optical filter using a conductor member is formed in the same manner as in the fifth or seventh embodiment. Subsequently, the optical filter coating material is planarized by a chemical or physical planarization technique. Subsequently, after forming a passivation layer, an organic color filter is applied. Then, patterning is performed by photolithography or etching.
  • An optical detection apparatus (imaging unit 1) according to aspect 1 of the present invention is an optical detection apparatus including at least one optical filter (2) and an optical sensor (3) that receives light transmitted through the optical filter. At least one of the optical filters has a periodic structure that selectively transmits light in a predetermined wavelength range.
  • the wavelength of light transmitted through the optical filter can be determined by setting the period of the periodic structure, and light in a desired wavelength range (for example, infrared light) is selectively received by the optical sensor. can do.
  • the light detection device is the light detection apparatus according to aspect 1, wherein the plurality of optical filters having different transmission wavelength ranges, and the plurality of optical sensors that receive light transmitted through each of the plurality of optical filters; It is preferable to provide.
  • At least one of the plurality of optical filters has a periodic structure that selectively transmits infrared rays in a predetermined wavelength range. .
  • infrared rays in a predetermined wavelength range can be received, and an image showing an optical image by the infrared rays can be generated.
  • the periodic structure preferably includes a plurality of openings formed periodically.
  • At least a part of the periodic structure can be formed by a plurality of periodically formed openings, and the periodic structure can be easily formed.
  • the optical detection device is the photodetection device according to any one of the aspects 1 to 4, wherein the period (P) of the periodic structure is the same as the maximum wavelength of light desired to be transmitted through the optical filter. Or shorter than that, According to the above configuration, an optical filter having a subwavelength structure can be realized.
  • the plurality of optical filters respectively select infrared rays in three different wavelength regions defined by dividing a predetermined infrared wavelength region into three.
  • at least three optical filters that transmit light are included.
  • the optical filter includes a conductor member at least partially.
  • the optical filter includes at least a part of an organic member, and the organic member includes a colorant.
  • the imaging device (imaging unit 1) according to aspect 9 of the present invention preferably includes the light detection device according to any one of aspects 1 to 8.
  • an imaging device including the light detection device according to one embodiment of the present invention can be realized.
  • the imaging device receives the light transmitted through the optical filter array and the optical filter array (composite optical filter array 8a) in which the optical filters are arranged in an array in the aspect 9, And an optical sensor array (6) having a plurality of optical sensors.
  • an imaging device including an optical filter and an optical sensor on the array.
  • the photodetector includes an optical filter and an optical sensor that receives light transmitted through the optical filter, and the optical filter has a periodic structure.
  • a light detection device includes a plurality of optical filters having different transmission wavelength ranges, and a plurality of optical sensors that receive light transmitted through each of the plurality of optical filters.
  • At least one of the optical filters is made of a conductive member having a periodic structure and transmits at least infrared rays in a predetermined wavelength region.
  • the periodic structure is configured such that the opening is arranged with a period shorter than the maximum wavelength of light transmitted through the optical filter.
  • the predetermined infrared wavelength region is divided into three, and in order from the shorter wavelength side, the first infrared wavelength region, the second infrared wavelength region, the third infrared wavelength region,
  • the plurality of optical filters include at least a first optical filter that transmits light in the first infrared wavelength region, a second optical filter that transmits light in the second infrared wavelength region, and light in the third infrared wavelength region.
  • a third optical filter that transmits light.
  • the optical filter includes an organic member in addition to the conductor member, and the organic member includes a colorant-containing member containing a dye or a pigment pigment. Become.
  • the solid-state imaging device includes a composite optical filter array having a plurality of composite optical filters and a photosensor array having a plurality of optical sensors, and each of the plurality of composite optical filters includes: A plurality of optical filters having different transmission wavelength ranges are provided, and each of the plurality of optical filters is made of a conductive member having a periodic structure and transmits infrared rays of at least a predetermined wavelength range.
  • the periodic structure is configured such that the opening is arranged with a period shorter than the maximum wavelength of light that passes through the optical filter.
  • the predetermined infrared wavelength region is divided into three, and the first infrared wavelength region, the second infrared wavelength region, and the third infrared wavelength region are sequentially formed from the shorter wavelength side
  • the optical filter transmits at least a first optical filter that transmits light in the first infrared wavelength region, a second optical filter that transmits light in the second infrared wavelength region, and transmits light in the third infrared wavelength region. And a third optical filter.
  • the optical filter has a periodic structure, transmits only a specific wavelength of light incident on the optical filter, and detects light detected through the pixel unit by the detection unit.
  • the pixel unit is configured to be able to transmit a specific wavelength, and the pixel unit is configured to be able to measure the light intensity of detection light of each wavelength corresponding to the transmitted light of the optical filter.
  • the light detection device has many features as described above, and has great industrial applicability.
  • the light detection device of the present invention can be used for a light detection device and an imaging device for imaging a subject.
  • Imaging unit photodetection device, imaging device
  • 2a to 2d 86A Optical filter 3, 3a to 3d
  • Optical sensor 6, 6a Optical sensor array 8a Composite optical filter array (optical filter array) 11A, 11B, 11C Image sensor (imaging part)
  • 86a First filter optical filter
  • 86b Second filter optical filter
  • 86c Third filter
  • 83a to 83c Light-shielding film (optical filter) ⁇ 1 to ⁇ 3 Optical filter P Period

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Abstract

La présente invention concerne un dispositif de détection de lumière et un dispositif imageur permettant l'imagerie en couleurs d'objets dans des environnements à faible éclairement, des environnements à très faible éclairement et des environnements à zéro lux. Dans cette invention, une unité d'imagerie (1) comprend des filtres optiques (2) et un capteur optique (3) afin de recevoir la lumière qui a traversé les filtres optiques (2). Au moins un des filtres optiques (2) a une structure périodique qui transmet la lumière de manière sélective dans une zone de longueur d'onde prédéfinie.
PCT/JP2016/055831 2015-03-31 2016-02-26 Dispositif de détection de lumière et dispositif imageur Ceased WO2016158128A1 (fr)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3419053A1 (fr) * 2017-06-21 2018-12-26 Life Technologies GmbH Composant optique ayant un filtre à base de guide d'ondes
KR20190002615A (ko) 2017-02-21 2019-01-08 가부시키가이샤 나노룩스 고체 촬상 소자 및 촬상 장치
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JP2022543543A (ja) * 2019-08-12 2022-10-13 エイエムエス－オスラム アーゲー オプトエレクトロニクスデバイスおよびオプトエレクトロニクスデバイスを製造する方法
JP7329128B2 (ja) 2019-08-12 2023-08-17 エイエムエス－オスラム アーゲー オプトエレクトロニクスデバイスおよびオプトエレクトロニクスデバイスを製造する方法
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WO2023013394A1 (fr) * 2021-08-06 2023-02-09 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie
KR20240062757A (ko) * 2022-11-02 2024-05-09 삼성전자주식회사 나노 광학 마이크로렌즈 어레이를 구비하는 이미지 센서 및 이를 포함하는 전자 장치
KR102721082B1 (ko) 2022-11-02 2024-10-24 삼성전자주식회사 나노 광학 마이크로렌즈 어레이를 구비하는 이미지 센서 및 이를 포함하는 전자 장치

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