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WO2016140377A1 - Sonde d'antenne à fente, et appareil et procédé permettant d'inspecter des défauts d'un semi-conducteur multijonction l'utilisant - Google Patents

Sonde d'antenne à fente, et appareil et procédé permettant d'inspecter des défauts d'un semi-conducteur multijonction l'utilisant Download PDF

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Publication number
WO2016140377A1
WO2016140377A1 PCT/KR2015/001993 KR2015001993W WO2016140377A1 WO 2016140377 A1 WO2016140377 A1 WO 2016140377A1 KR 2015001993 W KR2015001993 W KR 2015001993W WO 2016140377 A1 WO2016140377 A1 WO 2016140377A1
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WO
WIPO (PCT)
Prior art keywords
junction semiconductor
light
slit
terahertz
defect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2015/001993
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English (en)
Korean (ko)
Inventor
김근주
김재홍
김정일
윤지녕
임미현
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Korea Electrotechnology Research Institute KERI
Original Assignee
Samsung Electronics Co Ltd
Korea Electrotechnology Research Institute KERI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd, Korea Electrotechnology Research Institute KERI filed Critical Samsung Electronics Co Ltd
Priority to PCT/KR2015/001993 priority Critical patent/WO2016140377A1/fr
Priority to KR1020177021720A priority patent/KR102274264B1/ko
Publication of WO2016140377A1 publication Critical patent/WO2016140377A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/07—Non contact-making probes
    • G01R1/071—Non contact-making probes containing electro-optic elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/07—Non contact-making probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/20—Modifications of basic electric elements for use in electric measuring instruments; Structural combinations of such elements with such instruments
    • G01R1/24—Transmission-line, e.g. waveguide, measuring sections, e.g. slotted section
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
    • G01R31/275—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements for testing individual semiconductor components within integrated circuits

Definitions

  • the present invention relates to a slit antenna probe, and a defect inspection apparatus and method for a multi-junction semiconductor using the same. More specifically, the present invention increases the mechanical strength of the slit antenna probe, a slit antenna probe for performing defect inspection on the multi-junction semiconductor in real time in the manufacturing process of the multi-junction semiconductor using electromagnetic waves, and a multi-junction semiconductor using the same Relates to a defect inspection apparatus and method.
  • FIG. 1 a cross section of a general slit antenna probe 1 is shown in FIG. 1.
  • the general slit antenna probe 1 includes a guiding part 2 for guiding electromagnetic waves in the d direction and a slit 4 formed in the thin film 3 of the slit antenna probe 1. do.
  • the slit antenna probe 1 forms a slit 4 having a width length (length in the y direction) of about ⁇ / 2 on a part of the thin metal thin film 3, and utilizes the resonance characteristics in the narrow slit 4.
  • an antenna not only the size is small but also the structure is simple to manufacture.
  • FIG. 7 is a reference diagram of a conventional multi-junction semiconductor defect inspection apparatus.
  • a method of inspecting defects of a multi-junction semiconductor can be classified into an ultrasonic method and an infrared method. As shown in FIG. After the inspection, the defects of the multi-junction semiconductors are inspected, and after the inspection, a separate drying process for the multi-junction semiconductors is required or the multi-junction semiconductors that have been inspected must be discarded.
  • the defect inspection is performed by the reflection method, which is not easy to locate and at the same time using the ultrasonic wave reflected from the multi-junction semiconductor, the structure of the multi-junction semiconductor can hardly be grasped, thereby causing an inefficient problem.
  • a slit antenna probe according to an embodiment of the present invention and an apparatus and method for defect inspection of a multi-junction semiconductor using the same, aim to reduce reflection loss of electromagnetic waves while maintaining a large thickness of the slit.
  • a slit antenna probe according to an embodiment of the present invention and a defect inspection apparatus and method for a multi-junction semiconductor using the same are defects on a multi-junction semiconductor in real time using a terahertz wave, which is a kind of electromagnetic waves having a short pulse width. It aims at enabling the location of presence and absence of a defect.
  • the slit antenna probe according to an embodiment of the present invention and a defect inspection apparatus and method of a multi-junction semiconductor using the same, can reduce the reflection loss of electromagnetic waves while maintaining the thickness of the slit large.
  • a slit antenna probe according to an embodiment of the present invention and a defect inspection apparatus and method for a multi-junction semiconductor using the same are defects on a multi-junction semiconductor in real time using a terahertz wave, which is a kind of electromagnetic waves having a short pulse width. It is possible to locate the presence and absence of defects.
  • FIG. 1 is a cross-sectional view of a typical slit antenna probe.
  • FIG. 2 is a cross-sectional view of a slit antenna probe according to an embodiment of the present invention.
  • Figure 3 (a) is an enlarged view of the reflection reduction structure of the slit antenna probe according to an embodiment of the present invention
  • Figure 3 (b) is a perspective view of the reflection reduction structure of the slit antenna probe according to an embodiment of the present invention to be.
  • Figure 4 (a) is an enlarged view of the reflection reduction structure of the slit antenna probe according to another embodiment of the present invention
  • Figure 4 (b) is a perspective view of the reflection reduction structure of the slit antenna probe according to another embodiment of the present invention to be.
  • 5 (a) and 5 (b) are diagrams illustrating reflection characteristics of the slit antenna probe and reflection characteristics of the slit antenna probe according to an embodiment of the present invention when the slit antenna thickness is increased.
  • 6 (a) to 6 (c) are exemplary diagrams illustrating a pattern adjusting structure formed on one end surface of a slit antenna probe according to an embodiment of the present invention.
  • FIG. 7 is a reference diagram of a conventional multi-junction semiconductor defect inspection apparatus.
  • FIG. 8 is a reference view of a defect inspection apparatus of a multi-junction semiconductor according to a preferred embodiment of the present invention.
  • FIG. 9 is another reference diagram of a defect inspection apparatus for a multi-junction semiconductor according to a preferred embodiment of the present invention.
  • FIG. 10 is a reference diagram of a terahertz optical signal detected by the first photodetector of FIG. 8.
  • FIG. 11 is a reference diagram for a terahertz optical signal detected by the second photodetector of FIG. 8.
  • FIG. 12 is a reference diagram of an image signal for a multi-junction semiconductor generated by the image signal generator of FIG. 8.
  • FIG. 13 is a reference graph for a terahertz optical signal collected in the image signal generator of FIG. 8.
  • FIG. 14 is a comparison diagram of a multi-junction semiconductor image according to a conventional method and a multi-junction semiconductor image according to the present invention.
  • FIG. 15 is a comparison diagram of images of multiple junction semiconductors generated by the image signal generator of FIG. 8.
  • 16 to 21 are reference diagrams for a defect inspection apparatus of a multi-junction semiconductor according to still another preferred embodiment of the present invention.
  • FIG. 22 is a flowchart illustrating a defect inspection method of a multi-junction semiconductor according to a preferred embodiment of the present invention.
  • FIG. 23 is a flowchart illustrating a defect inspection method of a multi-junction semiconductor according to another exemplary embodiment of the present invention.
  • a defect inspection apparatus for a multi-junction semiconductor comprising: a light source for generating terahertz light and irradiating the multi-junction semiconductor side disposed below; A slit antenna probe emitting terahertz light generated from the light source to the multi-junction semiconductor side disposed below; A parallel light irradiator disposed between the slit antenna probe and the multi-junction semiconductor to uniformly irradiate terahertz light emitted from the light source to the multi-junction semiconductor side; An optical focusing unit disposed under the multi-junction semiconductor to focus terahertz light passing through the multi-junction semiconductor; A light distribution unit disposed between the slit antenna probe and the parallel light irradiation unit to distribute terahertz light passing through the parallel light irradiation unit after being reflected from the multi-junction semiconductor; A first light detector detecting the terahertz light focused at the light focusing unit; A second light detector for detecting terahertz light distributed by the light distributor
  • the slit antenna probe may include: a guiding part configured to guide the terahertz light generated from the light source; And a slit penetrating between the guiding portion and an outer space of the slit antenna probe, wherein the slit has a reflection reduction structure for reducing a degree of reflection of terahertz light passing through the slit through the guiding portion. Can be.
  • the reflection reduction structure may be formed such that the width length gradually decreases from the guiding portion side to the external space side.
  • the reflection reduction structure may have a round shape or a chamfer shape.
  • the slit may have a shape in which the width length gradually decreases from the guiding part side to the external space side, and the width length is kept constant from a predetermined point.
  • a pattern adjusting structure for adjusting the emission profile of the terahertz light may be formed.
  • the pattern adjusting structure may include at least one of a groove and a protrusion formed in one end surface of the slit antenna probe.
  • the slits may be plural, and the reflection reducing structure may be formed in each of the plurality of slits.
  • the defect inspection apparatus of the multi-junction semiconductor may further include a filter unit disposed between the parallel light irradiation unit and the multi-junction semiconductor and having at least one pinhole formed on a surface thereof.
  • the parallel light irradiator or the light concentrator may be arranged in an array form.
  • the terahertz optical signal detected by the first photodetector is a signal in which attenuation or time delay occurs due to at least one or more defects included in the multi-junction semiconductor, and the image signal analyzer uses the attenuation or time delay.
  • the presence or absence of a defect in a multi-junction semiconductor and the location of the defect can be grasped.
  • the terahertz optical signal detected by the second photodetector is a signal in which a size change or a time delay occurs according to a difference in refractive index caused by at least one interface including a defect among a plurality of interfaces included in the multi-junction semiconductor, and the image
  • the signal analyzer may determine the presence or absence of a defect of the multi-junction semiconductor and the location of the defect by using the size change or the time delay.
  • a defect inspection apparatus for a multi-junction semiconductor comprising: a light source for generating terahertz light and irradiating the multi-junction semiconductor side disposed below; A slit antenna probe emitting terahertz light generated from the light source to the multi-junction semiconductor side disposed below; A light detector for detecting terahertz light transmitted through or reflected from the multi-junction semiconductor; An image signal generator for collecting terahertz optical signals detected by the optical detector to generate an image signal for the multi-junction semiconductor; And an image signal analysis unit configured to analyze the generated image signal to determine whether there is a defect of the multi-junction semiconductor and a location of the defect, wherein the slit antenna probe is configured to guide the terahertz light generated from the light source.
  • a plurality of the slit antenna probes may be arranged in an array form.
  • a plurality of light converging parts may be arranged in an array form.
  • FIG 2 is a cross-sectional view of the slit antenna probe 200 according to an embodiment of the present invention.
  • the slit antenna probe 200 is formed to penetrate between the guiding part 210 and an external space of the guiding part 210 and the slit antenna probe 200. And a slit 230.
  • the slit antenna probe 200 emits electromagnetic waves, eg, terahertz light, generated from a light source (not shown) to a predetermined target.
  • electromagnetic waves eg, terahertz light
  • the guiding unit 210 guides the electromagnetic waves generated from the light source toward the slit 230, and the electromagnetic waves pass through the slit 230 and are emitted into the outer space of the slit antenna probe 200.
  • the slit antenna probe 200 As described above, as the thickness of the thin film 220 and the slit 230 increases, the degree of reflection of electromagnetic waves in the slit 230 increases, but the slit antenna probe 200 according to an embodiment of the present invention solves this problem. In order to prevent this, the reflection reduction structure 240 is formed in the slit 230.
  • the reflection reduction structure 240 may be formed in the region of the guiding part 210 side of the slit 230, and may have a width length gradually decreasing from the guiding part 210 side to the external space side.
  • the slit 230 has a shape in which the width length gradually decreases, and the width length is kept constant from a predetermined point.
  • the reflection reduction structure 240 in which the width length gradually decreases from the guiding part 210 side to the external space side performs a kind of impedance matching, so that the amount of reflection in the slit 230 of the electromagnetic wave guided to the guiding part 210. Can be reduced.
  • the slit antenna probe 200 may include a plurality of slits 230, and the reflection reduction structure 240 may be formed in each of the plurality of slits 230.
  • FIG. 3 (a) is an enlarged view of the reflection reduction structure 240 of the slit antenna probe 200 according to an embodiment of the present invention
  • FIG. 3 (b) is a slit antenna probe according to an embodiment of the present invention.
  • Figure 4 (a) is an enlarged view of the reflection reduction structure 340 of the slit antenna probe 300 according to another embodiment of the present invention
  • Figure 4 (b) is a slit according to another embodiment of the present invention
  • the reflection reduction structure 240 may be formed in a round shape, and as shown in FIGS. 4A and 4B, reflections.
  • the reduction structure 340 may be formed in a chamfer shape.
  • the reflection reduction structures 240 and 340 shown in FIGS. 3 (a), 3 (b), 4 (a) and 4 (b) are just one example and are provided from the guiding portions 210 and 310 side. If the width length is gradually reduced toward the outer space, it may correspond to the reflection reduction structure of the present invention.
  • 5 (a) and 5 (b) are diagrams illustrating reflection characteristics of a general slit antenna probe 1 and reflection characteristics of the slit antenna probes 200 and 300 according to an embodiment of the present invention.
  • the electromagnetic waves reflected from the slit have about -25 dB around 200 GHz. It can be seen that the electromagnetic waves reflected from the slits 230 and 330 of the slit antenna probes 200 and 300 according to an exemplary embodiment have about -60 dB around 200 GHz.
  • 6A through 6C are exemplary diagrams illustrating a pattern adjusting structure 610 formed in the slit antenna probes 200 and 300 according to an embodiment of the present invention.
  • a pattern adjusting structure 610 for adjusting a radiation profile of electromagnetic waves may be formed.
  • the pattern adjustment structure 610 may include at least one of a groove and a protrusion formed in one end surface of the slit antenna probe 200 and 300.
  • FIG. 8 is a reference view of a defect inspection apparatus of a multi-junction semiconductor according to a preferred embodiment of the present invention.
  • a defect inspection apparatus for a multi-junction semiconductor may include a light source 10, a slit antenna probe 15, a parallel light irradiation unit 20, a light focusing unit 30, and a second light source.
  • the first light detector 40, the light distributor 50, the second light detector 60, the image signal generator 70, and the image signal analyzer 80 are included.
  • the light source 10 generates terahertz light and emits the light toward the multi-junction semiconductor M disposed below.
  • the light source 10 is for generating terahertz light, that is, terahertz wave, means a electromagnetic wave that is located in the 0.1 ⁇ 10 THz region with a terahertz blue frequency and occupies a range of 3mm to 30 ⁇ m as a wavelength.
  • terahertz wave means a electromagnetic wave that is located in the 0.1 ⁇ 10 THz region with a terahertz blue frequency and occupies a range of 3mm to 30 ⁇ m as a wavelength.
  • terahertz waves are located in the middle region of lightwave and radiowave in the spectral distribution, so they have both linearity, absorbency and transmission of light waves. Therefore, various kinds of materials such as air, plastic, paper, fiber, ceramic, etc. It has excellent permeability to the field, has a resolution of several hundred ⁇ m, and obtains spectral information about the various kinds of materials, and enables real-time monitoring of the various kinds of materials using imaging technology.
  • the light source 10 may use a laser as an excitation light source or an incoherent light source using a coherent light source using a current injection or a blackbody radiation or a mercury lamp. ) May be a light source.
  • the slit antenna probe 15 may be positioned between the light source 10 and the parallel light emitter 20, and the slit antenna probe 15 may direct terahertz light emitted from the light source 10 toward the parallel light emitter 20. To emit. Since the slit antenna probe 15 has been described above, a detailed description thereof will be omitted.
  • the parallel light radiator 20 is disposed between the slit antenna probe 15 and the multi-junction semiconductor M to irradiate terahertz light emitted from the slit antenna probe 15 uniformly to the multi-junction semiconductor M side.
  • the reason for irradiating the terahertz light uniformly to the multi-junction semiconductor M side in the parallel light irradiation unit 20 is to allow the terahertz light to be irradiated to the multi-junction semiconductor M as a whole.
  • 20 may be a cylindrical lens, an oval lens, a reflective optical system, an antenna, or the like capable of irradiating terahertz light emitted from the slit antenna probe 15 uniformly to the multi-junction semiconductor M side in the form of plane light. .
  • the light focusing unit 30 is disposed below the multi-junction semiconductor M to focus terahertz light transmitted through the multi-junction semiconductor M, and the light focusing unit 30 is a terrazzo that transmits the multi-junction semiconductor M. It may be a concave lens, a reflection mirror, an antenna, or the like capable of focusing Hertz light.
  • the first light detector 40 detects the terahertz light focused by the light focusing unit 30.
  • the first photodetector 40 converts the detected terahertz optical signal into an electrical signal having a waveform over time
  • the terahertz optical signal detected by the first photodetector 40 is a multi-junction semiconductor (M). It may be a signal in which attenuation or time delay occurs due to at least one or more defects included in the.
  • first photodetector 40 may be configured as one, and the plurality of first photodetectors 40 may be arranged in a one-dimensional (1D) form or in a two-dimensional (2D) form to improve detection speed for terahertz light. It is possible to let.
  • the light distribution unit 50 is disposed between the slit antenna probe 15 and the parallel light irradiation unit 20 to reflect terahertz light passing through the parallel light irradiation unit 20 after being reflected from the multi-junction semiconductor M.
  • the second photodetector 60 detects terahertz light distributed by the light distribution unit 5.
  • the second photodetector 60 converts the detected terahertz optical signal into an electrical signal having a waveform over time
  • the terahertz optical signal detected by the second photodetector 60 is a multi-junction semiconductor (M). It may be a signal in which a size change or a time delay occurs according to a difference in refractive index caused by at least one or more of the boundary surfaces included in the interface.
  • the second photodetector 60 may be configured as one, and the plurality of second photodetectors 60 may be arranged in a one-dimensional (1D) form or in a two-dimensional (2D) form to increase detection speed for terahertz light. It is possible to let.
  • the image signal generator 70 collects the terahertz optical signals detected by the first photodetector 40 or the second photodetector 60 to generate an image signal for the multi-junction semiconductor M.
  • the image signal generator 70 collects a signal which is detected by the first photodetector 40 or the second photodetector 60 and then converted into an electrical signal having a waveform over time, and then converted into a frequency domain.
  • An image signal for the multi-junction semiconductor M may be generated using the magnitude and phase of the signal converted into the frequency domain.
  • the image signal analyzer 80 is an image of the multi-junction semiconductor M generated by the terahertz optical signal and the image signal generator 70 detected by the first photodetector 40 or the second photodetector 60. The signal is analyzed to determine whether there is a defect in the multi-junction semiconductor M and the location of the defect.
  • the image signal analyzer 80 may use the attenuation or time delay of the terahertz optical signal detected by the first photodetector 40 or the magnitude change of the terahertz optical signal detected by the second photodetector 60.
  • the presence or absence of a defect in the multi-junction semiconductor M may be determined using the time delay.
  • the defect inspection apparatus of the multi-junction semiconductor it is possible to grasp the presence or absence of a defect and the position of the defect with respect to the multi-junction semiconductor S in a transmission method or a reflection method.
  • the image signal analyzer 80 transmits the image signal for the multi-junction semiconductor M to the display D, so that a user who uses a defect inspection apparatus of the multi-junction semiconductor M has defects of the multi-junction semiconductor M and
  • the processing system S may be defective by allowing the location of the defect to be directly confirmed or by transmitting a result of identifying the presence or absence of a defect in the multi-junction semiconductor M and the location of the defect to a separate processing system S.
  • the determined multi-junction semiconductor M may be separated or screened, or the manufacturing process of the multi-junction semiconductor S may be optimized.
  • FIG. 9 is another reference diagram of a defect inspection apparatus for a multi-junction semiconductor according to a preferred embodiment of the present invention.
  • the parallel light irradiation unit 20, the light distribution unit 50, and the second light detection unit 60 are omitted in comparison with the defect inspection apparatus of the multi-junction semiconductor shown in FIG. 8.
  • the terahertz light emitted from the slit antenna probe 15 may pass through the multiple junction semiconductor M and be detected by the first photodetector 40.
  • the first photodetector 40 may be positioned above the multi-junction semiconductor M to detect terahertz light reflected from the multi-junction semiconductor M.
  • the terahertz light reflected from the multi-junction semiconductor M through the connected coupler (not shown) and transmitted to the slit antenna probe 15 may be detected.
  • FIG. 10 is a reference diagram of the terahertz optical signal detected by the first photodetector of FIG. 8
  • FIG. 11 is a reference diagram of the terahertz optical signal detected by the second photodetector of FIG. 8,
  • the plurality of media A1, A2, and A3 constituting the multi-junction semiconductor M are included. At least one defect A2 'causes attenuation or time delay.
  • the multi-junction semiconductor M may be defective. It can be seen that the attenuation or time delay ⁇ t1 occurs when the electrical signal in the case (W / void) is compared with the electrical signal in the case where there is no defect in the multi-junction semiconductor M (W / O void).
  • the image signal analyzer 80 may determine whether the multi-junction semiconductor M is defective by using the terahertz optical signal detected by the first photodetector 40.
  • a plurality of boundary surfaces L1, L2, L3, and L4 included in the multi-junction semiconductor M are next.
  • a change in size or a time delay occurs according to a difference in refractive indexes caused by at least one interface L2 and L3 including a defect.
  • the multi-junction semiconductor M may be defective. It can be seen that the electrical signal in the case (W / void) has a magnitude change or a time delay ⁇ t in comparison with the electrical signal in the case where there is no defect in the multi-junction semiconductor M (W / O void).
  • the image signal analyzer 80 may determine whether the multi-junction semiconductor M is defective by using the terahertz optical signal detected by the second photodetector 40.
  • the image signal generator 70 may generate an electrical signal having a waveform according to time generated for each of the plurality of regions P1, P2, P3, and P4 of the multi-junction semiconductor M in the frequency domain.
  • the image signal analyzer 80 is a multi-junction semiconductor (M) By analyzing the video signal with respect to (e.g., analyzing the contrast ratio of the video signal), it becomes possible to determine the defect position inside the multi-junction semiconductor (M).
  • FIG. 13 is a reference graph of a terahertz optical signal collected in the image signal generator of FIG. 8
  • FIG. 14 is a comparison diagram of a multi-junction semiconductor image according to the conventional method, and a multi-junction semiconductor image according to the present invention
  • FIG. 15 is FIG. 8 is a comparison diagram of images of multiple junction semiconductors generated by the image signal generator of FIG. 8.
  • FIG. 14 an image of a multi-junction semiconductor (FIG. 14A) generated by using ultrasonic waves as shown in FIG. 7A and a multi-junction semiconductor according to a preferred embodiment of the present invention is illustrated. Comparing the image (FIG. 14B) of the multi-junction semiconductor generated using the defect inspection apparatus, the multi-junction semiconductor generated using the defect inspection apparatus of the multi-junction semiconductor according to the preferred embodiment of the present invention may be compared. In the case of an image, it becomes possible to more clearly identify the structure of a multi-junction semiconductor.
  • the image signal generator 70 may generate an image signal for the multi-junction semiconductor M using the magnitude of the signal converted into the frequency domain (FIG. 15A).
  • the image signal for the multi-junction semiconductor M may be generated using the phase of the signal converted into the frequency domain (FIG. 15B), and the image signal analyzer 80 generates the multi-junction.
  • the image signal analyzer 80 By analyzing the image signal for the semiconductor (M) it is possible to determine the location of the defect generated in the multi-junction semiconductor (M).
  • 16 to 21 are reference diagrams for a defect inspection apparatus of a bonded semiconductor device according to still another preferred embodiment of the present invention.
  • the filter unit 90 having at least one pinhole 92 formed on a surface thereof is disposed between the parallel light irradiation unit 20 and the multi-junction semiconductor M to examine a narrow area. Can be performed.
  • terahertz light is generated directly to the multi-junction semiconductor M through the light source 10 and the slit antenna probe 15, and is located below the multi-junction semiconductor M.
  • the terahertz light passing through the multi-junction semiconductor M may be detected through the first light detector 40.
  • the first photodetector 40 is positioned on the multijunction semiconductor M, and is reflected from the multijunction semiconductor M through the first photodetector 40.
  • the terahertz light can be detected, and as shown in FIG. 17C, the terahertz light reflected from the multi-junction semiconductor M is detected using the coupler 16 connected to the slit antenna probe 15. You may.
  • the plurality of light focusing units 30 are arranged in an array form A so as to be disposed above or below the multi-junction semiconductor M, so that the multi-junction semiconductor M has a large area. It is possible to improve the defect inspection speed (FIG. 18 (a)) or to perform defect inspection on a plurality of multi-junction semiconductors M at the same time (FIG. 18B).
  • FIGS. 19A and 19B except for the plurality of light concentrators 30 shown in FIGS. 18A and 18B, the light sources 10 in the form of an array are provided.
  • the slit antenna probe 15 it is also possible to arrange the light source 10 in the form of an array, the slit antenna probe 15 and the plurality of light focusing portions 30 in the form of an array together.
  • the defect inspection apparatus of the multi-junction semiconductor of the present invention may be applied to manufacturing steps of the multi-junction semiconductor M to determine whether there is a defect in a process flow in real time.
  • the inspection of the presence or absence of defects v in the molding m having the plastic material of the multi-junction semiconductor M is also possible.
  • FIG. 21 except for the plurality of light concentrators 30 shown in FIG. 20, it is also possible to arrange the light source 10 and the slit antenna probe 15 in the manufacturing stage.
  • FIG. 22 is a flowchart illustrating a defect inspection method of a multi-junction semiconductor according to a preferred embodiment of the present invention.
  • the light source 10 generates terahertz light and emits the light toward the multi-junction semiconductor M disposed below.
  • step S10 further comprises the step of uniformly irradiating the terahertz light to the multi-junction semiconductor (M) by the parallel light irradiation unit 20 disposed between the slit antenna probe 15 and the multi-junction semiconductor (M).
  • M multi-junction semiconductor
  • the light focusing unit 30 focuses the terahertz light passing through the multi-junction semiconductor M.
  • the first light detector 40 detects the terahertz light focused in S20.
  • the image signal generator 80 may further include generating an image signal for the multi-junction semiconductor M using the terahertz light detected in S30.
  • the defect of the multi-junction semiconductor M is determined by the image signal analyzer 80 at S40 using the terahertz optical signal detected at S30 and the image signal for the multi-junction semiconductor M generated at the image signal generator 80. Once the presence and defect location are known, the termination is completed.
  • the image signal analyzer 80 uses the terahertz optical signal detected at S30 and the image signal for the multi-junction semiconductor M generated by the image signal generator 80 to defect the multi-junction semiconductor M.
  • FIG. The detailed process of determining the presence and defect location has been described with reference to FIGS. 10 and 12 and will be omitted.
  • FIG. 23 is a flowchart illustrating a defect inspection method of a multi-junction semiconductor according to still another preferred embodiment of the present invention.
  • the light source 10 generates terahertz light and irradiates toward the multi-junction semiconductor M disposed below.
  • the parallel light irradiation unit 20 disposed between the slit antenna probe 15 and the multi-junction semiconductor M may further include uniformly irradiating the terahertz light to the multi-junction semiconductor M side. Can be.
  • the second light detector 60 detects the terahertz light distributed in S120.
  • the image signal generator 80 may further include generating an image signal for the multi-junction semiconductor M using the terahertz light detected in S130.
  • the defect of the multi-junction semiconductor M is determined by the image signal analyzer 80 at S140 using the terahertz optical signal detected at S130 and the image signal for the multi-junction semiconductor M generated at the image signal generator 80. If the presence and location of the defect is known, the termination is made.
  • the image signal analyzer 80 may detect the defects of the multi-junction semiconductor M using the terahertz optical signal detected in S130 and the image signal for the multi-junction semiconductor M generated by the image signal generator 80. Detailed processes for determining the presence and absence of defects have been described with reference to FIGS. 11 and 12 and thus will be omitted.
  • the image signal generator The 70 generates an image signal for the multi-junction semiconductor M using this.
  • the image signal analyzer 80 detects the presence or absence of defects and defects of the multi-junction semiconductor M by using an electrical signal having a waveform according to the converted time and an image signal for the generated multi-junction semiconductor M. I can figure out the location.
  • the multi-junction semiconductor M can be inspected using both transmission and reflection properties, it is easy to grasp the presence or absence of a defect and the location of the defect of the multi-junction semiconductor M.
  • defect inspection on multi-junction semiconductors is performed using terahertz waves so that underwater inspection is not necessary, so that full inspection of multi-junction semiconductors is possible in real time, while permeation to air is possible, so inspection after defects is also possible. Has an effect.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
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Abstract

L'invention concerne un appareil permettant d'inspecter des défauts d'un semi-conducteur multijonction selon un mode de réalisation, l'appareil étant caractérisé en ce qu'il comprend : une source de lumière ; une sonde d'antenne à fente ; une partie de rayonnement de lumière parallèle ; une partie de collecte de lumière ; une partie de distribution de lumière ; une première partie de détection de lumière ; une seconde partie de détection de lumière ; une partie de génération de signal d'image ; et une partie d'analyse de signal d'image, la sonde d'antenne à fente comprenant : une partie de guidage permettant de guider la lumière térahertz générée par la source de lumière ; et une fente pénétrant par un espace externe entre la partie de guidage et la sonde d'antenne à fente, une structure de réduction de réflexion permettant de réduire le degré de réflexion de la lumière térahertz passant par la partie de guidage et passant par la fente étant formée sur la fente.
PCT/KR2015/001993 2015-03-02 2015-03-02 Sonde d'antenne à fente, et appareil et procédé permettant d'inspecter des défauts d'un semi-conducteur multijonction l'utilisant Ceased WO2016140377A1 (fr)

Priority Applications (2)

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PCT/KR2015/001993 WO2016140377A1 (fr) 2015-03-02 2015-03-02 Sonde d'antenne à fente, et appareil et procédé permettant d'inspecter des défauts d'un semi-conducteur multijonction l'utilisant
KR1020177021720A KR102274264B1 (ko) 2015-03-02 2015-03-02 슬릿 안테나 프로브, 및 이를 이용한 다중 접합 반도체의 결함 검사 장치 및 방법

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PCT/KR2015/001993 WO2016140377A1 (fr) 2015-03-02 2015-03-02 Sonde d'antenne à fente, et appareil et procédé permettant d'inspecter des défauts d'un semi-conducteur multijonction l'utilisant

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