WO2016038820A1 - Procédé de formation de câblage d'électrode, corps de structure, et écran tactile - Google Patents
Procédé de formation de câblage d'électrode, corps de structure, et écran tactile Download PDFInfo
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- WO2016038820A1 WO2016038820A1 PCT/JP2015/004272 JP2015004272W WO2016038820A1 WO 2016038820 A1 WO2016038820 A1 WO 2016038820A1 JP 2015004272 W JP2015004272 W JP 2015004272W WO 2016038820 A1 WO2016038820 A1 WO 2016038820A1
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- Prior art keywords
- electrode wiring
- mask
- forming
- coating film
- metal nanowire
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
Definitions
- the present invention relates to a method for forming electrode wiring, a structure, and a touch panel, and more particularly, to a method for forming electrode wiring using metal nanowires, and a structure and a touch panel including electrode wiring formed by the method.
- a metal oxide such as indium tin oxide (ITO) has been used for an electrode that requires light transmission, such as an electrode provided on a display surface of a display panel such as a touch panel.
- ITO indium tin oxide
- an electrode using a metal oxide is manufactured by sputtering film formation in a vacuum environment, and thus is expensive to manufacture, and is liable to be cracked or peeled off due to deformation such as bending or deflection. Met.
- Electrodes using metal nanowires are also attracting attention as next-generation transparent electrodes that do not use indium, which is a rare metal (see, for example, Patent Documents 1 and 2).
- the electrode using the conventional metal nanowire has a problem that it is not sufficiently visible (non-visibility). That is, when the electrode using the conventional metal nanowire is applied to a device such as a touch panel, the pattern of the wiring (electrode wiring) made of the electrode in the panel is easily visually recognized, and more or less the user. Was uncomfortable. Therefore, in addition to functional properties such as low resistance, such electrode wiring is also required to have visual performance.
- the present invention provides a method for forming an electrode wiring that can easily form an electrode wiring having low resistance and excellent invisibility, and a structure and a touch panel using the electrode wiring formed by the method.
- the purpose is to provide.
- the present inventors have made the edge of the electrode wiring appear blurry by relatively reducing the thickness of the edge of the electrode wiring. It has been found that visibility is improved. And the present inventors arrange
- a mask disposing step of disposing a mask having an opening on a substrate Using a spray nozzle, while the spray nozzle or the base material is moved substantially parallel to the surface direction of the base material, a dispersion liquid containing metal nanowires and a solvent is sprayed on the opening to Metal nanowire dispersion spraying process to form a coating film on A coating film drying step of drying the coating film to form an electrode wiring;
- a method of forming an electrode wiring comprising:
- the mask has a thickness of 20 ⁇ m or more and 500 ⁇ m or less,
- the electrode wiring is a method for forming an electrode wiring, characterized in that the thickness of the electrode wiring is smaller as it is closer to the edge.
- the coating film formed on the base material has low fluidity, and the height of the coating film surface in the opening can be made uniform, and the increase in the thickness of the edge portion of the electrode wiring can be suppressed.
- the “average droplet diameter” means a particle diameter at which the cumulative volume calculated from the small diameter side is 50% in the particle diameter distribution measured using a laser diffraction spray particle diameter distribution measuring apparatus.
- Point to. ⁇ 3> The method for forming an electrode wiring according to ⁇ 1> or ⁇ 2>, wherein the opening has a width in a direction perpendicular to a movement direction of the spray nozzle or the base material of 600 ⁇ m or less.
- ⁇ 4> The method for forming an electrode wiring according to any one of ⁇ 1> to ⁇ 3>, wherein the metal nanowire is a silver nanowire.
- ⁇ 5> The method for forming an electrode wiring according to any one of ⁇ 1> to ⁇ 4>, wherein the electrode wiring is a jumper wiring of a capacitive input device.
- ⁇ 6> A structure having an electrode wiring formed by the method for forming an electrode wiring according to any one of ⁇ 1> to ⁇ 5>.
- ⁇ 7> A touch panel comprising the structure according to ⁇ 6>.
- a method for forming an electrode wiring which can solve the above-described problems and can achieve the above-mentioned object, and can easily form an electrode wiring having a low resistance and excellent invisibility. And the structure and touch panel using the electrode wiring formed by the said method can be provided.
- FIG. 1 is a schematic diagram for explaining a mask disposing step of the electrode wiring forming method of the present invention.
- FIG. 2 is a schematic diagram for explaining some embodiments of mask openings that can be used in the electrode wiring forming method of the present invention.
- FIG. 3 is a schematic diagram for explaining the metal nanowire dispersion spraying step of the electrode wiring forming method of the present invention.
- FIG. 4 a is a schematic diagram for explaining one embodiment of the electrode wiring formed by the electrode wiring forming method of the present invention.
- FIG. 4B is a schematic diagram for explaining an embodiment of the jumper wiring formed by the electrode wiring forming method of the present invention.
- FIG. 1 is a schematic diagram for explaining a mask disposing step of the electrode wiring forming method of the present invention.
- FIG. 2 is a schematic diagram for explaining some embodiments of mask openings that can be used in the electrode wiring forming method of the present invention.
- FIG. 3 is a schematic diagram for explaining the metal nanowire dispersion spraying step of the electrode wiring
- FIG. 5 a is a reference schematic diagram of the edge portion of the electrode wiring formed by the electrode wiring forming method according to the embodiment of the present invention, which is observed with a microscope.
- FIG. 5B is a reference schematic diagram of the edge portion of the electrode wiring formed by the electrode wiring forming method of the conventional embodiment, which is observed with a microscope.
- the method for forming an electrode wiring according to the present invention includes at least a mask disposing step, a metal nanowire dispersion spraying step, and a coating film drying step. Other processes such as a pressure process are included. Hereinafter, each process will be described in detail.
- the mask disposing step is a step of disposing a mask having an opening and a predetermined thickness on the base material.
- the transparent base material comprised with the material which has transparency with respect to visible light, such as an inorganic material and a plastic material, is preferable.
- the transparent substrate has a film thickness required for a structure such as a transparent electrode provided with electrode wiring, for example, a film shape (sheet shape) thinned to such an extent that flexible flexibility can be realized, Or it can be set as the flat form which has a film thickness of the grade which can implement
- limiting in particular as said inorganic material According to the objective, it can select suitably, For example, quartz, sapphire, glass, etc. are mentioned.
- a triacetyl cellulose TAC
- polyester TPE
- PET polyethylene terephthalate
- PEN polyethylene naphthalate
- PA polyimide
- PA polyamide
- PA polyamide
- PA polyamide
- PA polyamide
- PA polyamide
- PA polyamide
- PE polyacrylate
- PE polyether sulfone
- PP polypropylene
- PP diacetyl cellulose
- PVC polyvinyl chloride
- acrylic resin PMMA
- PC polycarbonate
- Known polymer materials such as resin, urea resin, urethane resin, melamine resin, and cycloolefin polymer (COP) can be used.
- the film thickness of the transparent substrate is preferably 5 ⁇ m to 500 ⁇ m from the viewpoint of productivity, but is not particularly limited to this range.
- the mask has one or more openings, and is for forming a coating film on a substrate exposed through the openings.
- the mask needs to have a thickness of 20 ⁇ m to 500 ⁇ m.
- metals such as SUS and chromium
- glass such as quartz glass and soda glass, etc.
- metals such as SUS and chromium are preferable in terms of high-precision processing.
- the shape of the opening which the said mask has It can select suitably according to the shape of desired electrode wiring, for example, a rectangle (a substantially rectangular shape is included), an ellipse (a substantially elliptical shape is included).
- the shape can be arbitrarily patterned.
- the rectangular shape is preferable from the viewpoint of easily forming the opening and suppressing the non-uniformity of the conductivity of the electrode wiring.
- the opening of the mask may have a cut-out cross section substantially parallel to the thickness direction of the mask as shown in FIG. 2A, and as shown in FIGS. 2B and 2C.
- the cut-out cross section may have a certain angle with respect to the thickness direction of the mask so that the opening area of the upper surface of the mask is smaller or larger than the opening area of the lower surface of the mask.
- the thickness of the mask (t m in FIG. 1) is not particularly limited as long as it is 20 ⁇ m or more and 500 ⁇ m or less, and can be appropriately selected according to the purpose, but is preferably 20 ⁇ m or more and 400 ⁇ m or less, and 20 ⁇ m or more and 300 ⁇ m or less. Is more preferable.
- the thickness of the mask is less than 20 ⁇ m, a dead space cannot be sufficiently formed in the vicinity of the opening contour portion on the base material, and the thickness of the edge portion of the obtained electrode wiring is reduced to reduce the visibility. There is a possibility that it cannot be improved.
- the thickness of the mask exceeds 500 ⁇ m, the mask itself becomes a barrier during the metal nanowire dispersion spraying process, and an intended wiring pattern may not be formed. May get worse.
- the thickness of the mask is within the preferable range or the more preferable range, it is advantageous from the viewpoint of improving the non-visibility of the obtained electrode wiring and suppressing deterioration of conductivity.
- the thickness of the mask may vary over the surface direction of the mask or may be constant, but is constant from the viewpoint of uniform resistance of the obtained electrode wiring. Is preferred.
- a mask 2 having an opening 3 is arranged so as to cover the base material 1 from above.
- the position of the opening 3 is made to coincide with the position (not shown) where the electrode wiring is to be formed on the substrate 1.
- the metal nanowire dispersion spraying step is a step of spraying the metal nanowire dispersion toward the opening on the substrate using a spray nozzle. By spraying the dispersion, a coating film can be formed on the substrate.
- the spray nozzle is not particularly limited as long as the metal nanowire dispersion can be sprayed onto the substrate, and can be appropriately selected according to the purpose, and may be a one-fluid nozzle. Alternatively, a two-fluid nozzle that sprays with gas may be used. Among these, a two-fluid nozzle is preferable from the viewpoint that the average droplet diameter (average particle diameter) of the dispersion to be sprayed can be further reduced and the droplet diameter can be easily adjusted.
- the said metal nanowire dispersion liquid contains a metal nanowire and a solvent, and also contains a binder, a dispersing agent, another component, etc. as needed.
- a viscosity of the said metal nanowire dispersion liquid there is no restriction
- the viscosity of the metal nanowire dispersion liquid is 1 mPa ⁇ s or more, the fluidity of the coating film formed on the substrate can be further reduced.
- the viscosity of the metal nanowire dispersion liquid is 50 mPa ⁇ s or less, clogging of the dispersion liquid in the spray nozzle or in the supply line to the spray nozzle can be suppressed.
- the metal nanowire is made of metal and is a fine wire having a diameter on the order of nm.
- the constituent element of the metal nanowire is not particularly limited as long as it is a metal element, and can be appropriately selected according to the purpose.
- Ag, Au, Ni, Cu, Pd, Pt, Rh, Ir examples include Ru, Os, Fe, Co, Sn, Al, Tl, Zn, Nb, Ti, In, W, Mo, Cr, Fe, V, Ta, and the like. These may be used individually by 1 type and may use 2 or more types together.
- the metal nanowire is a silver nanowire or a copper nanowire
- Ag is preferable (that is, the metal nanowire is a silver nanowire). More preferably, it is a wire.
- the average minor axis diameter of the metal nanowire is not particularly limited and may be appropriately selected depending on the intended purpose, but is preferably more than 1 nm and not more than 500 nm, and more preferably 10 nm to 100 nm.
- the average minor axis diameter of the metal nanowire is 1 nm or less, the conductivity of the metal nanowire is deteriorated, and the electrode wiring including the metal nanowire may not function as an electrode, and exceeds 500 nm. Then, the total light transmittance and haze of the electrode wiring including the metal nanowire may deteriorate, or the metal nanowire may be clogged in the spray nozzle or in the supply line to the spray nozzle.
- the average minor axis diameter of the metal nanowire is in the more preferable range, it is advantageous in that the electrode wiring including the metal nanowire has high conductivity and high transparency.
- the average major axis length of the metal nanowire is not particularly limited and may be appropriately selected depending on the intended purpose, but is preferably 1 ⁇ m to 1000 ⁇ m, and more preferably 1 ⁇ m to 100 ⁇ m.
- the metal nanowires are not easily connected to each other, and the electrode wiring including the metal nanowire may be difficult to function as an electrode.
- the total light transmittance and haze of electrode wiring including metal nanowires deteriorate, the dispersibility of metal nanowires in the metal nanowire dispersion deteriorates, in the spray nozzle or in the supply line to the spray nozzle In some cases, metal nanowires may become clogged.
- the metal nanowire may have a wire shape in which metal nanoparticles are connected in a bead shape.
- the length of the metal nanowire is not limited.
- the metal nanowire in the said metal nanowire dispersion liquid there is no restriction
- the content of metal nanowires in the metal nanowire dispersion is 0.01% by mass or more, the amount of solvent necessary to form a coating film with the expected amount of metal nanowires is optimized, The invisibility of the electrode wiring can be improved by suppressing fluidization of the coating film formed on the substrate.
- the metal nanowire content in the metal nanowire dispersion liquid is 0.5% by mass or less, thereby suppressing clogging of the metal nanowires in the spray nozzle or in the supply line to the spray nozzle. it can.
- the solvent is not particularly limited as long as the metal nanowires are dispersed, and can be appropriately selected according to the purpose.
- water methanol, ethanol, n-propanol, i-propanol, n- Alcohols such as butanol, i-butanol, sec-butanol and tert-butanol; ketones such as cyclohexanone, cyclopentanone and anone; amides such as N, N-dimethylformamide (DMF); sulfides such as dimethyl sulfoxide (DMSO); Etc. These may be used individually by 1 type and may use 2 or more types together.
- the solvent water, ethanol, and 1-propanol are preferable.
- the binder is for dispersing the metal nanowires in a dispersion.
- the binder is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include known transparent, natural polymer resins and synthetic polymer resins, and may be thermoplastic resins. It may also be a heat (light) curable resin that is cured by heat, light, electron beam, or radiation. These may be used individually by 1 type and may use 2 or more types together.
- the thermoplastic resin is not particularly limited and may be appropriately selected depending on the intended purpose.
- thermosetting (photo) curable resin is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include silicon resins such as melamine acrylate, urethane acrylate, isocyanate, epoxy resin, polyimide resin, and acrylic-modified silicate. And a polymer in which a photosensitive group such as an azide group or a diazirine group is introduced into at least one of a main chain and a side chain.
- the dispersant is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include polyvinyl pyrrolidone (PVP); amino group-containing compounds such as polyethyleneimine; sulfo groups (including sulfonates) and sulfonyl groups.
- PVP polyvinyl pyrrolidone
- amino group-containing compounds such as polyethyleneimine
- sulfo groups including sulfonates
- Sulfonamide group carboxylic acid group (including carboxylate), amide group, phosphate group (including phosphate and phosphate ester), phosphino group, silanol group, epoxy group, isocyanate group, cyano group, vinyl group,
- a compound having a functional group such as a thiol group or a carbinol group, which can be adsorbed to a metal; These may be used alone or in combination of two or more.
- the dispersant may be adsorbed on the surface of the metal nanowire. Thereby, the dispersibility of the said metal nanowire can be improved.
- the dispersant when included in the dispersion, it is preferable to add the dispersant so as not to deteriorate the conductivity of the finally obtained electrode wiring.
- the said dispersing agent can be made to adsorb
- the other components are not particularly limited and may be appropriately selected depending on the intended purpose.
- surfactants for example, surfactants, viscosity modifiers, curing accelerators, plasticity, stabilizers such as antioxidants and sulfidizing agents, and the like. , Etc.
- a metal nanowire dispersion liquid is sprayed on the said opening, and a coating film is formed on a base material.
- the spray nozzle 4 is used, and the spray nozzle 4 is moved in an arbitrary direction substantially parallel to the surface direction of the substrate 1.
- the metal nanowire dispersion liquid 7 is sprayed on the opening 3 of the mask 2.
- the opening contour portion 6 on the base material 1 is a dead space, and the dispersion liquid 7 is difficult to reach.
- a certain amount of the solvent in the droplets of the dispersion 7 can be volatilized before reaching the substrate 1.
- the coating film 5 having low fluidity and a relatively small edge portion thickness can be formed on the substrate 1.
- the spray nozzle 4 is moved, but instead of the spray nozzle 4, the base material 1 provided with the mask 2 is placed in any direction substantially parallel to the surface direction of the base material 1.
- both the substrate 1 provided with the spray nozzle 4 and the mask 2 may be moved in an arbitrary direction substantially parallel to the surface direction of the substrate 1.
- the direction of moving the spray nozzle or substrate is not particularly limited as long as it is substantially parallel to the surface direction of the substrate, and can be appropriately selected according to the purpose. From the viewpoint of simplifying the movement and easily forming the electrode wiring, the longitudinal direction of the opening is preferable.
- the direction in which the spray nozzle or the substrate is moved includes the long side direction of the rectangle, the short side direction of the rectangle, and the like.
- the spray nozzle or the substrate may be moved by scanning.
- a moving speed at the time of moving the said spray nozzle or a base material there is no restriction
- the moving speed is 10 mm / second or more, the coating film can be prevented from fluidizing and uniforming in height. Further, when the speed is 1000 mm / second or less, the conductivity of the obtained electrode wiring can be sufficiently ensured.
- the spray angle of the spray nozzle ( ⁇ in FIG. 3) is not particularly limited and may be appropriately selected depending on the intended purpose, but is preferably 5 ° to 50 °, more preferably 10 ° to 40 °. .
- the spray angle of the spray nozzle is 5 ° or more, a dead space is generated in the vicinity of the opening contour portion on the substrate, and the height of the edge portion of the obtained electrode wiring can be made relatively low.
- the spray angle of the spray nozzle is 50 ° or less, it is possible to spray over a wide area while maintaining the conductivity of the electrode.
- the distance between the spray nozzle and the substrate is not particularly limited and may be appropriately selected depending on the intended purpose, but is preferably 30 mm or more and 150 mm or less, more preferably 50 mm or more and 120 mm or less. preferable.
- the distance between the spray nozzle and the substrate is 30 mm or more, a dead space is generated in the vicinity of the opening contour portion on the substrate, and the height of the edge portion of the obtained electrode wiring is relatively set. Can be lowered.
- the distance between the spray nozzle and the substrate is 150 mm or less, it is possible to spray over a wide area while maintaining the conductivity of the electrode.
- an average droplet diameter (average particle diameter) of the dispersion liquid sprayed using the said spray nozzle there is no restriction
- the average droplet diameter (average particle diameter) is 5 ⁇ m or more, clogging of metal nanowires in the spray nozzle can be suppressed.
- the average droplet diameter (average particle diameter) is 50 ⁇ m or less, the solvent can be volatilized appropriately before the droplets of the metal nanowire dispersion reach the substrate, whereby the electrode An increase in the height of the edge of the wiring can be suppressed and non-visibility can be improved.
- the opening of the mask preferably has a width in the direction perpendicular to the moving direction of the spray nozzle or the substrate of 600 ⁇ m or less, and more preferably 500 ⁇ m or less. That is, for example, when the opening of the mask has a rectangular shape and the spray nozzle or the substrate is moved in the long side direction of the rectangle, the length of the short side of the rectangle (the width of the opening) is , Preferably 600 ⁇ m or less, and more preferably 500 ⁇ m or less. When the width is 600 ⁇ m or less, an increase in contrast between the obtained electrode wiring and the substrate can be suppressed, and the invisibility can be sufficiently improved.
- the upper limit of the width is not particularly limited and may be appropriately selected depending on the intended purpose, but is preferably 100 ⁇ m or more from the viewpoint of sufficiently ensuring the conductivity of the obtained electrode wiring.
- the basis weight of the metal nanowires in the coating film is not particularly limited, suitably it can be selected, preferably 0.001g / m 2 ⁇ 1.000g / m 2 depending on the purpose, 0. 003 g / m 2 to 0.3 g / m 2 is more preferable.
- the basis weight of the metal nanowires in the coating film is less than 0.001 g / m 2 , the metal nanowires are not sufficiently present in the coating film, and the conductivity of the obtained electrode wiring may be deteriorated.
- the estimated amount of the metal nanowire in the said coating film exceeds 1.000 g / m ⁇ 2 >, the total light transmittance and haze (Haze) of the electrode wiring obtained may deteriorate.
- the basis weight of the metal nanowire is within the more preferable range, it is advantageous in that the obtained electrode wiring has high conductivity and high transparency.
- the coating film drying step is a step of forming an electrode wiring by drying and removing the solvent or the like in the coating film formed in the metal nanowire dispersion spraying step.
- limiting in particular as said drying According to the objective, it can select suitably, For example, drying by the hot air of a dryer, hotplate drying, oven drying, IR drying, etc. are mentioned.
- the coating film drying step the coating film may be dried with the mask disposed, or the coating film may be dried after removing the mask.
- the heating temperature in the coating film drying step is not particularly limited and may be appropriately selected depending on the intended purpose, but is preferably 60 ° C to 140 ° C, more preferably 80 ° C to 120 ° C, and particularly about 120 ° C. preferable.
- the heating temperature in the coating film drying step is less than 60 ° C., the time required for drying may become long and workability may deteriorate, and when it exceeds 140 ° C., the glass transition temperature (Tg) of the substrate The substrate may be distorted due to trade-off.
- the heating temperature in the coating film drying step is within the more preferable range or the particularly preferable temperature, it is advantageous in terms of forming a network of metal nanowires.
- the heating time in the coating film drying step is not particularly limited and may be appropriately selected depending on the intended purpose, but is preferably 1 minute to 30 minutes, more preferably 2 minutes to 10 minutes, and particularly about 5 minutes. preferable. If the heating time in the coating film drying step is less than 1 minute, the solvent may not be sufficiently removed, and if it exceeds 30 minutes, workability and productivity of electrode wiring may be deteriorated. . On the other hand, when the heating time in the coating film drying step is within the more preferable range or the particularly preferable time, it is advantageous in terms of network formation of metal nanowires, workability, and productivity of electrode wiring.
- the coating film after the coating film drying step is optionally irradiated with ultraviolet rays (ultraviolet irradiation step), subjected to pressure treatment (pressurization step), and / or cooled in any order. (Cooling step), the final electrode wiring can be obtained.
- the coating film that can form the electrode wiring is formed by spraying the metal nanowire dispersion liquid using the spray nozzle through the opening of the mask.
- an electrode wiring excellent in non-visibility can be easily formed.
- the electrode wiring 8 formed on the base material 1 by the electrode wiring forming method of the present invention preferably has a relatively large central portion 8a and is closer to the edge portion 8b.
- the thickness is small. Therefore, even when this electrode wiring 8 is applied to a device such as a touch panel, the boundary with the base material appears to be blurred, so that it is difficult to visually recognize the electrode wiring 8. Therefore, this electrode wiring 8 is excellent in non-visibility.
- a jumper wiring of a capacitance type input device can be suitably formed.
- a jumper wiring 8 'used in a capacitance-type input device includes a transparent substrate 1a, an X electrode pattern 1b 1 and an X electrode pattern 1b formed on the transparent substrate 1a.
- the conductive layer 1b composed of a plurality of Y electrode patterns 1b 2 separated by 1 and the region on the conductive layer 1b that should be prevented from being electrically connected to the X electrode pattern 1b 1 and the Y electrode pattern 1b 2 It is formed on the laminated base material 1 composed of the insulating layer 1c provided on the substrate.
- the jumper wiring 8 ' is not usually formed on a flat base material, but straddles the insulating layer 1c on the base material 1 having a partially provided insulating layer 1c and the like. Therefore, it tends to be visually recognized as compared with a normal electrode wiring, and higher invisibility is required.
- a jumper wiring 8 ′ that sufficiently satisfies this requirement can be formed.
- the insulating layer can be formed using, for example, an acrylic resin or an acrylic resin containing a photosensitive component.
- the structure of the present invention includes at least an electrode wiring formed by the electrode wiring forming method of the present invention, and further includes other optional members such as a protective resist and a hard coat material. Since the structure includes the electrode wiring formed by the electrode wiring forming method of the present invention, the structure can be easily manufactured, and the electrode wiring is excellent in low resistance and invisibility.
- the structure is not particularly limited as long as it has an electrode wiring formed by the method for forming an electrode wiring of the present invention. That is, any of the electrode wirings formed by the electrode wiring forming method of the present invention and at least one arbitrary member corresponds to the structure of the present invention.
- the touch panel of the present invention includes at least the structure of the present invention, and further includes other known members (see, for example, Japanese Patent No. 4862969) as necessary. Since the touch panel includes the electrode wiring formed by the electrode wiring forming method of the present invention, the touch panel can be easily manufactured and has excellent low resistance and non-visibility of the electrode wiring.
- Example 1 ⁇ Preparation of metal nanowire dispersion> A metal nanowire dispersion was prepared with the following composition. In addition, the viscosity of the obtained metal nanowire dispersion liquid was 30 mPa * s.
- Metal nanowire Silver nanowire (manufactured by Seashell Technology, AgNW-25, average minor axis diameter 25 nm (maker value), average major axis length 23 ⁇ m (maker value)): compounding amount 0.05 parts by mass (2 )
- Binder Hydroxypropylmethylcellulose (manufactured by Aldrich, viscosity 80 cP to 120 cP of 2% aqueous solution at 20 ° C. (document value)): 0.15 parts by mass (3)
- Solvent (i) Water: 89.80 Parts by mass, (ii) ethanol: 10.00 parts by mass
- a flat PET substrate (“U34” manufactured by Toray Industries, Inc., thickness 125 ⁇ m) was prepared.
- a 200 ⁇ m thick metal mask having a rectangular opening with a short side length of 50 ⁇ m and a long side length of 200 ⁇ m is formed on this substrate, and the center point of the insulating layer and the center of gravity of the opening region of the mask Are arranged so as to overlap with each other (mask arranging step).
- a spray nozzle As a spray nozzle, a two-fluid nozzle (manufactured by Acing Technologies, atomization pressure: 0.1 MPa, nozzle diameter: 0.8 mm) capable of supplying predetermined air as a gas is prepared.
- the metal nanowire dispersion liquid was set so that it could be sprayed vertically downward.
- the base material on which the mask was arranged was separated from the two-fluid nozzle by 80 mm and arranged so that the opening portion could be located below the two-fluid nozzle.
- the metal nanowire dispersion is sprayed onto the opening with a two-fluid nozzle while moving the base material at a speed of 100 mm / sec and a feed pitch of 2.0 mm on the base material having an insulating film.
- a coating film was formed on (metal nanowire dispersion liquid spraying step).
- the spray angle of the spray nozzle is 30 °
- the average droplet diameter (average particle diameter) of the dispersion to be sprayed is 20 ⁇ m
- the basis weight of the metal nanowires on the base material in the mask opening is the minimum value. In the range of 0.001 g / m 2 and the maximum value of 0.06 g / m 2 .
- the average droplet size (average particle size) of the dispersion to be sprayed was measured based on the laser diffraction method using a spray particle size distribution measuring device “LDSA-3500A” manufactured by Nikkiso Co., Ltd.
- the coating film on the substrate was dried using a natural convection drying apparatus (“SONW-450S” manufactured by ASONE) at a temperature of 80 ° C. for 5 minutes (coating film drying step). Then, it cooled to normal temperature, the mask was removed from the base material, and the electrode wiring as a jumper wiring was produced. And the measurement of the resistance value of this electrode wiring and evaluation of non-visibility were performed as shown below.
- SONW-450S manufactured by ASONE
- Example 2 In Example 1, except that the length of the long side of the opening of the metal mask was changed from 200 ⁇ m to 100 ⁇ m, an electrode wiring was prepared in the same manner as in Example 1, and the resistance value measurement and non-visibility were performed. Evaluation was performed. The results are shown in Table 1.
- Example 3 In Example 1, except that the thickness of the metal mask was changed from 200 ⁇ m to 20 ⁇ m, an electrode wiring was prepared in the same manner as in Example 1, and the resistance value was measured and the invisibility was evaluated. The results are shown in Table 1.
- Example 4 In Example 1, except that the thickness of the metal mask was changed from 200 ⁇ m to 500 ⁇ m, an electrode wiring was prepared in the same manner as in Example 1, and the resistance value was measured and the invisibility was evaluated. The results are shown in Table 1.
- Example 5 In Example 1, as in Example 1, except that the atomization pressure was changed so that the average droplet diameter (average particle diameter) of the metal nanowire dispersion sprayed by the two-fluid nozzle was changed from 20 ⁇ m to 5 ⁇ m. Then, electrode wirings were prepared, and resistance values were measured and invisibility was evaluated. The results are shown in Table 1.
- Example 6 In Example 1, except that the atomization pressure was changed so that the average droplet diameter (average particle diameter) of the metal nanowire dispersion sprayed by the two-fluid nozzle was changed from 20 ⁇ m to 50 ⁇ m. Then, electrode wirings were prepared, and resistance values were measured and invisibility was evaluated. The results are shown in Table 1.
- Example 7 In Example 1, except that the atomization pressure was changed so that the average droplet diameter (average particle diameter) of the metal nanowire dispersion sprayed by the two-fluid nozzle was changed from 20 ⁇ m to 60 ⁇ m. Then, electrode wirings were prepared, and resistance values were measured and invisibility was evaluated. The results are shown in Table 1.
- Example 8 In Example 1, the length of the short side of the opening of the metal mask was changed from 50 ⁇ m to 600 ⁇ m, and the length of the long side was changed from 200 ⁇ m to 3000 ⁇ m. It produced and measured the resistance value and evaluated non-visibility. The results are shown in Table 1.
- Example 9 In Example 1, the length of the short side of the opening of the metal mask was changed from 50 ⁇ m to 700 ⁇ m, and the length of the long side was changed from 200 ⁇ m to 5000 ⁇ m. It produced and measured the resistance value and evaluated non-visibility. The results are shown in Table 1.
- Example 10 In Example 1, it replaced with the PET board
- Example 11 In Example 1, instead of the silver nanowire, an electrode wiring was prepared in the same manner as in Example 1 except that a copper nanowire (NOVARIALS, NovaWireCu01, average minor axis diameter 30 nm) was used. Measurement of values and evaluation of non-visibility were performed. The results are shown in Table 1.
- a metal nanowire dispersion was prepared in the same manner as in Example 1 except that a photocurable resin (“AWP-MPH” manufactured by Toyo Gosei Co., Ltd.) was used instead of hydroxypropylmethylcellulose as the binder.
- ADP-MPH photocurable resin manufactured by Toyo Gosei Co., Ltd.
- the above-mentioned metal nanowire dispersion liquid was uniformly apply
- the basis weight of the metal nanowires on the substrate was set to 0.001 g / m 2 .
- the coating film on the substrate was dried using a natural convection dryer (“SONW-450S” manufactured by ASONE) at a temperature of 120 ° C. for 5 minutes.
- SONW-450S manufactured by ASONE
- a mask having a thickness of 500 ⁇ m having a rectangular opening with a short side length of 50 ⁇ m and a long side length of 100 ⁇ m is disposed on the dried coating film, and ultraviolet rays are irradiated on the mask for 10 seconds. Then, the coating film of the opening was exposed.
- Comparative Example 2 In Comparative Example 1, except that the length of the short side of the opening of the mask disposed on the dried coating film was changed from 50 ⁇ m to 100 ⁇ m and the length of the long side was changed from 100 ⁇ m to 500 ⁇ m. In the same manner as in Example 1, electrode wirings were produced, and resistance values were measured and invisibility was evaluated. The results are shown in Table 2.
- Comparative Example 4 In Comparative Example 3, the length of the short side of the rectangle to be processed using the laser processing apparatus was changed from 50 ⁇ m to 100 ⁇ m, and the length of the long side was changed from 100 ⁇ m to 500 ⁇ m. Electrode wirings were prepared, and resistance values were measured and invisibility was evaluated. The results are shown in Table 2.
- Comparative Example 5 ⁇ Preparation of metal nanowire dispersion, formation of insulating layer, formation of coating film, drying of coating film, and exposure with ultraviolet light>
- a metal nanowire dispersion was prepared, an insulating layer was formed on the substrate, a coating film was formed, the coating film was dried, and the coating film was exposed to ultraviolet rays. .
- etching a photoresist (UVR-E31B, Asahi Chemical Research Laboratories) is coated, and a 500 ⁇ m thick mask having a rectangular opening with a short side length of 50 ⁇ m and a long side length of 100 ⁇ m is disposed on the coating film. It is exposed to ultraviolet rays for 10 seconds from above, exposed, developed with a developer (“NPD-18” manufactured by Nagase ChemteX Corporation), and etched with an etching solution (“Escreen IS” manufactured by Sasaki Chemical Co., Ltd.). ) And etching was performed under the condition of 40 ° C. for 30 seconds.
- Comparative Example 6 In Comparative Example 5, an electrode wiring was prepared in the same manner as in Comparative Example 5 except that the length of the short side of the mask opening was changed from 50 ⁇ m to 100 ⁇ m and the length of the long side was changed from 100 ⁇ m to 500 ⁇ m. The resistance value was measured and the invisibility was evaluated. The results are shown in Table 2.
- Example 7 (Comparative Example 7) In Example 1, except that the thickness of the metal mask was changed from 200 ⁇ m to 10 ⁇ m, an electrode wiring was prepared in the same manner as in Example 1, and the resistance value was measured and the invisibility was evaluated. The results are shown in Table 2.
- Example 8 In Example 1, except that the thickness of the metal mask was changed from 200 ⁇ m to 600 ⁇ m, an electrode wiring was prepared in the same manner as in Example 1, and the resistance value was measured and the invisibility was evaluated. The results are shown in Table 2.
- FIGS. 5a and 5b Examples 1 to 5 using a mask having a thickness of 20 ⁇ m or more and 500 ⁇ m or less and having undergone at least a mask disposing step, a metal nanowire dispersion spraying step, and a coating film drying step. 11, compared with Comparative Examples 1 to 6 that do not pass through at least one of these steps, and Comparative Examples 7 and 8 in which the thickness of the mask to be used is out of the range of 20 ⁇ m or more and 500 ⁇ m or less, low resistance of the obtained electrode wiring It can be seen that the property and the non-visibility are excellent.
- the method of forming the electrode wiring through the mask arranging process, the metal nanowire dispersion spraying process, and the coating film drying process is compared with the method of forming other electrode wirings.
- it also has the advantage of being an extremely easy method.
- the electrode wiring formed by using the electrode wiring forming method of the present invention can constitute a structure together with other arbitrary members such as a protective resist and a hard coat material.
- the said structure can be utilized suitably for a touch panel, uses other than a touch panel (for example, organic EL electrode, the surface electrode of a solar cell, a transparent antenna (wireless antenna for charge of a mobile phone or a smart phone), dew condensation It can also be suitably used as a transparent heater that can be used for prevention or the like.
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Abstract
L'objectif de la présente invention est de fournir un procédé permettant de former un câblage d'électrode, qui permet de former facilement un câblage d'électrode qui possède une faible résistance et qui présente une non-visibilité supérieure. L'invention concerne un procédé permettant de former un câblage d'électrode, comprenant : une étape de positionnement de masque consistant à positionner, sur un substrat, un masque qui présente des ouvertures ; une étape de pulvérisation de dispersion de nanofils métalliques consistant à pulvériser dans les ouvertures une dispersion comprenant des nanofils métalliques et un solvant, à l'aide d'une buse de pulvérisation, tout en déplaçant la buse de pulvérisation ou le substrat de manière approximativement parallèle à une direction plane du substrat, de façon à former un revêtement de film sur le substrat ; et une étape de séchage du revêtement de film consistant à sécher le revêtement de film, de façon à former un câblage d'électrode. L'épaisseur du masque est de 20 à 500 µm, et le câblage d'électrode diminue en épaisseur vers ses parties de bord.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-185558 | 2014-09-11 | ||
| JP2014185558A JP2016057982A (ja) | 2014-09-11 | 2014-09-11 | 電極配線の形成方法、構造体、及びタッチパネル |
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| Publication Number | Publication Date |
|---|---|
| WO2016038820A1 true WO2016038820A1 (fr) | 2016-03-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2015/004272 Ceased WO2016038820A1 (fr) | 2014-09-11 | 2015-08-25 | Procédé de formation de câblage d'électrode, corps de structure, et écran tactile |
Country Status (2)
| Country | Link |
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| JP (1) | JP2016057982A (fr) |
| WO (1) | WO2016038820A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111224020A (zh) * | 2020-01-14 | 2020-06-02 | 吉林建筑大学 | 一种基于喷墨融合的薄膜电极材料沉积方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012527071A (ja) * | 2009-05-14 | 2012-11-01 | デュポン テイジン フィルムズ ユー.エス.リミテッド パートナーシップ | 透明導電性複合フィルム |
| WO2014007050A1 (fr) * | 2012-07-03 | 2014-01-09 | 富士フイルム株式会社 | Corps en couches transparent, dispositif d'entrée à capacitance électrostatique, et dispositif d'affichage d'image |
| JP2014089689A (ja) * | 2012-10-29 | 2014-05-15 | Samsung Electro-Mechanics Co Ltd | タッチパネル及びその製造方法 |
| WO2014109264A1 (fr) * | 2013-01-09 | 2014-07-17 | コニカミノルタ株式会社 | Électrode transparente pour panneaux tactiles, panneau tactile, dispositif d'affichage, et procédé de fabrication d'électrode transparente pour panneaux tactiles |
-
2014
- 2014-09-11 JP JP2014185558A patent/JP2016057982A/ja active Pending
-
2015
- 2015-08-25 WO PCT/JP2015/004272 patent/WO2016038820A1/fr not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012527071A (ja) * | 2009-05-14 | 2012-11-01 | デュポン テイジン フィルムズ ユー.エス.リミテッド パートナーシップ | 透明導電性複合フィルム |
| WO2014007050A1 (fr) * | 2012-07-03 | 2014-01-09 | 富士フイルム株式会社 | Corps en couches transparent, dispositif d'entrée à capacitance électrostatique, et dispositif d'affichage d'image |
| JP2014089689A (ja) * | 2012-10-29 | 2014-05-15 | Samsung Electro-Mechanics Co Ltd | タッチパネル及びその製造方法 |
| WO2014109264A1 (fr) * | 2013-01-09 | 2014-07-17 | コニカミノルタ株式会社 | Électrode transparente pour panneaux tactiles, panneau tactile, dispositif d'affichage, et procédé de fabrication d'électrode transparente pour panneaux tactiles |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111224020A (zh) * | 2020-01-14 | 2020-06-02 | 吉林建筑大学 | 一种基于喷墨融合的薄膜电极材料沉积方法 |
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| Publication number | Publication date |
|---|---|
| JP2016057982A (ja) | 2016-04-21 |
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