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WO2016035821A1 - Composition de résine pour fixation temporaire, film de résine pour fixation temporaire, feuille de film de résine pour fixation temporaire et procédé d'usinage de plaquette à semi-conducteur - Google Patents

Composition de résine pour fixation temporaire, film de résine pour fixation temporaire, feuille de film de résine pour fixation temporaire et procédé d'usinage de plaquette à semi-conducteur Download PDF

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Publication number
WO2016035821A1
WO2016035821A1 PCT/JP2015/074966 JP2015074966W WO2016035821A1 WO 2016035821 A1 WO2016035821 A1 WO 2016035821A1 JP 2015074966 W JP2015074966 W JP 2015074966W WO 2016035821 A1 WO2016035821 A1 WO 2016035821A1
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WO
WIPO (PCT)
Prior art keywords
temporary fixing
semiconductor wafer
resin
film
meth
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Ceased
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PCT/JP2015/074966
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English (en)
Japanese (ja)
Inventor
恵子 上野
孝寛 徳安
竜也 牧野
省吾 祖父江
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Resonac Corp
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Hitachi Chemical Co Ltd
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Priority to JP2016546674A priority Critical patent/JPWO2016035821A1/ja
Publication of WO2016035821A1 publication Critical patent/WO2016035821A1/fr
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32—Epoxy compounds containing three or more epoxy groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/50—Amines
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • H10P52/00—
    • H10P72/70—
    • H10P95/00—

Definitions

  • the present invention relates to a temporarily fixing resin composition, a temporarily fixing resin film, a temporarily fixing resin film sheet, and a semiconductor wafer processing method used when processing a semiconductor wafer.
  • SIP System in Package
  • a semiconductor element is manufactured, for example, by incorporating an integrated circuit into a semiconductor wafer having a certain thickness, then thinning the semiconductor wafer by grinding the back surface, and further dividing the semiconductor wafer into individual pieces. Processing of a semiconductor wafer is performed by temporarily fixing the semiconductor wafer to a support with a temporarily fixing material (for example, refer to Patent Document 1 below).
  • TSV through silicon via
  • thermosetting resin such as an epoxy resin
  • the curing is preferably performed at a low temperature for a short time in consideration of damage to the semiconductor wafer.
  • uncured components remain in the curing at a low temperature in a short time, and if uncured components remain, foaming may occur in a high temperature process.
  • the present invention has been made in view of the above circumstances, and a temporarily fixing resin composition capable of forming a temporarily fixing material that can be cured at a low temperature for a short time, and for temporarily fixing using the temporarily fixing resin composition It aims at providing the processing method of a resin film, the resin film sheet for temporary fixation, and a semiconductor wafer.
  • the present invention relates to a temporary fixing resin composition for forming a temporary fixing material used in a method for processing a semiconductor wafer, wherein (A) a thermoplastic resin (component (A)) and (B) a thermosetting resin. ((B) component), (C) (meth) acrylic monomer ((C) component), and (D) a compound ((D) component) that generates a base and a radical by radiation. ) Component content is 5 parts by mass or more with respect to 100 parts by mass of the component (C), and the semiconductor wafer processing method temporarily fixes the semiconductor wafer to a support via the temporary fixing material.
  • a fixing step a processing step of processing the semiconductor wafer temporarily fixed to the support; and a separation step of separating the processed semiconductor wafer from the support and the temporary fixing material.
  • radiation irradiation is performed on the temporary fixing material. It takes place, provides a temporary fixing resin composition.
  • the temporary fixing resin composition according to the present invention uses the components (A) to (D) and the content of the component (D) is in a specific range, so that bases and radicals generated after radiation irradiation Since a reaction is induced by this, a temporary fixing material (such as a film-like temporary fixing material) that can be cured at a low temperature for a short time can be formed.
  • the “low temperature” is, for example, 160 ° C. or less
  • the “short time” is, for example, 60 seconds or less.
  • the temporary fixing material is required to have releasability so that the processed semiconductor wafer can be easily separated from the support.
  • the semiconductor wafer and the support can be separated at as low a temperature as possible so that the semiconductor wafer is not damaged and warped, and that no temporary fixing material remains on the semiconductor wafer.
  • the temporary fixing material described in Patent Document 1 has a tendency that heat resistance to a high-temperature process when a through electrode is formed on a semiconductor wafer and a high-temperature process when connecting the semiconductor wafers formed with the through-electrode are not sufficient. is there. If the heat resistance of the temporarily fixing material is insufficient, there is a tendency that the temporarily fixing material is thermally decomposed during the high temperature process and the semiconductor wafer is peeled off from the support. On the other hand, use of general resin excellent in heat resistance, such as a polyimide having a high glass transition temperature (Tg), can be considered.
  • Tg glass transition temperature
  • the temporary fixing material is in the form of a film to make it easy to ensure flatness during processing, if the glass transition temperature of the resin is high, the semiconductor wafer and the support are bonded together at a high temperature. Must be performed, which may damage the semiconductor wafer. For this reason, the film-like temporary fixing material is required to have a low temperature sticking property that can sufficiently fix the semiconductor wafer and the support even if they are bonded together at a low temperature.
  • the temporary fixing resin composition according to the present invention has good storage stability, can cope with low-temperature and short-time curing, and has excellent low-temperature sticking property and sufficient heat resistance.
  • a temporary fixing material (such as a film-like temporary fixing material) that can sufficiently fix the semiconductor wafer to the support can be formed.
  • This temporary fixing material can easily separate the processed semiconductor wafer from the support and can be easily separated from the processed semiconductor wafer, so that the processed semiconductor wafer is not immersed in a solvent. Can be easily separated from the support and the temporary fixing material.
  • the resin composition for temporary fixing according to the present invention has excellent adhesiveness. Thereby, a support body and a semiconductor wafer can be firmly fixed at the time of grinding (for example, back grinding process) of a semiconductor wafer.
  • the components (A) to (D) are used, and the content of the (D) component is in a specific range, whereby the temporary fixing resin composition is formed.
  • the storage stability of the fixing material such as a film-like temporary fixing material
  • low-temperature curing, and short-time curing can be achieved at a high level.
  • the component (C) preferably has two or more functional groups.
  • the sticking property (low temperature sticking property, etc.) of the temporarily fixing material (film-like temporarily fixing material, etc.) formed from the temporarily fixing resin composition and the short-time curing are further improved. Both can be achieved at a high level.
  • the resin composition for temporary fixing according to the present invention further contains an epoxy resin curing agent and the component (B) is an epoxy resin is preferable.
  • the sticking property (low temperature sticking property, etc.) and the heat resistance of the temporarily fixing material (film-like temporarily fixing material, etc.) formed from the temporarily fixing resin composition can be achieved at a higher level.
  • the component (A) is preferably a (meth) acrylic copolymer having a reactive group.
  • the low-temperature sticking property and the heat resistance of the temporarily fixing material (film-like temporarily fixing material or the like) formed from the temporarily fixing resin composition can be made compatible at a higher level.
  • the resin composition for temporary fixing according to the present invention preferably further contains a silicone compound.
  • the peelability can be further improved.
  • the resin composition for temporary fixing according to the present invention preferably further contains a curing accelerator. In this case, it becomes easy to achieve both curability and storage stability of the temporarily fixing resin composition.
  • the present invention also provides a temporarily fixing resin film formed by forming the temporarily fixing resin composition according to the present invention into a film shape.
  • a temporarily fixing resin film formed by forming the temporarily fixing resin composition according to the present invention into a film shape.
  • the temporary fixing resin film according to the present invention preferably has a viscosity of 200 to 6000 Pa ⁇ s at 120 ° C. before radiation irradiation.
  • the present invention also includes a support film having releasability and the temporarily fixing resin film according to the present invention, wherein the temporarily fixing resin film is provided on the support film.
  • a film sheet According to the resin film sheet for temporary fixing according to the present invention, the resin film for temporary fixing according to the present invention can be easily transferred to a semiconductor wafer or a support, and the semiconductor wafer can be processed efficiently.
  • the present invention also provides a temporary fixing step of temporarily fixing a semiconductor wafer to a support via a temporary fixing material, a processing step of processing the semiconductor wafer temporarily fixed to the support, and the processed semiconductor wafer Separating from the support and the temporary fixing material, radiation irradiation is performed on the temporary fixing material in the temporary fixing step, and the temporary fixing material is for temporary fixing according to the present invention.
  • a method for processing a semiconductor wafer, which is a resin film, is provided. According to the semiconductor wafer processing method of the present invention, the temporarily fixing resin composition can be cured at a low temperature in a short time, and the semiconductor wafer can be processed efficiently.
  • a temporarily fixing resin composition capable of forming a temporarily fixing material that can be cured at a low temperature for a short time, a temporarily fixing resin film using the temporarily fixing resin composition, and a temporarily fixing resin film sheet
  • a method for processing a semiconductor wafer can be provided. According to the present invention, it has good storage stability, can cope with low temperature and short time curing, has excellent low temperature sticking property and sufficient heat resistance, and can sufficiently fix a semiconductor wafer to a support.
  • a temporary fixing resin composition capable of forming a temporary fixing material capable of easily separating the processed semiconductor wafer from the support and the temporary fixing material, and a temporary fixing using the temporary fixing resin composition
  • a fixing resin film, a temporary fixing resin film sheet, and a method for processing a semiconductor wafer can be provided.
  • the present invention it is possible to provide an application of a resin composition for forming a temporary fixing material.
  • ADVANTAGE OF THE INVENTION According to this invention, the application of the resin composition for forming a film-form temporary fixing material can be provided. ADVANTAGE OF THE INVENTION according to this invention, the application of the resin composition for forming the temporary fixing material used for the processing method of a semiconductor wafer can be provided. ADVANTAGE OF THE INVENTION According to this invention, the application of the resin composition for forming the film-form temporary fixing material used for the processing method of a semiconductor wafer can be provided.
  • the application of the resin composition, the resin film, or the resin film sheet for temporary fixing to the temporary fixation of a semiconductor wafer can be provided.
  • ADVANTAGE OF THE INVENTION the application of the resin composition, the resin film, or the resin film sheet for temporary fixing to manufacture of a semiconductor element can be provided.
  • ADVANTAGE OF THE INVENTION the application of the resin composition, the resin film, or the resin film sheet for temporary fixing to manufacture of a semiconductor device can be provided.
  • FIG. 1 (A) is a top view showing one embodiment of a resin film sheet for temporary fixing according to the present invention
  • FIG. 1 (B) is a schematic cross section taken along line II of FIG. 1 (A).
  • FIG. FIG. 2 (A) is a top view showing another embodiment of the resin film sheet for temporary fixing according to the present invention
  • FIG. 2 (B) is a schematic view taken along line II-II in FIG. 2 (A).
  • 3A, 3B, and 3C are schematic cross-sectional views for explaining one embodiment of a method for processing a semiconductor wafer
  • FIG. 3D is a semiconductor after processing. It is a top view which shows a wafer.
  • FIG. 3D is a semiconductor after processing. It is a top view which shows a wafer.
  • FIG. 4 is a schematic cross-sectional view for explaining an embodiment of a separation process for separating a processed semiconductor wafer from a support and a temporary fixing material.
  • FIG. 5 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing a semiconductor device.
  • (meth) acryl is used to mean at least one of acrylic and methacryl corresponding thereto. The same applies to other similar expressions such as “(meth) acrylate”. “A or B” only needs to include either A or B, and may include both.
  • the materials exemplified below may be used alone or in combination of two or more unless otherwise specified.
  • the content of each component in the composition is the total amount of the plurality of substances present in the composition unless there is a specific notice when there are a plurality of substances corresponding to each component in the composition. means.
  • the temporarily fixing resin composition according to the present embodiment is a temporarily fixing resin composition for forming a temporarily fixing material (film-like temporarily fixing material (temporary fixing film) or the like) used in a semiconductor wafer processing method. It is.
  • the resin composition for temporary fixing according to the present embodiment includes (A) a thermoplastic resin (component (A)), (B) a thermosetting resin (component (B)), (C) (meth) acrylic monomer (( C) component) and (D) a compound ((D) component) that generates a base and a radical by radiation, and the content of (D) component is 5 masses per 100 parts by mass of (C) component. Or more.
  • the semiconductor wafer processing method includes a temporary fixing step of temporarily fixing a semiconductor wafer to a support via a temporary fixing material, a processing step of processing the semiconductor wafer temporarily fixed to the support, and a processed semiconductor wafer. Separating from the support and the temporary fixing material.
  • the temporary fixing material is irradiated with radiation in the temporary fixing step.
  • the temporarily fixing resin composition according to the present embodiment is a temporarily fixing resin composition that can cope with low-temperature and short-time curing by generated bases and radicals.
  • the resin composition for temporary fixing uses the components (A) to (D) and the content of the component (D) is in a specific range, the reaction is not induced before irradiation and good storage is achieved. It has stability, and after irradiation, the reaction is induced by the generated bases and radicals and can cope with low temperature and short time curing. It has excellent low temperature sticking property and sufficient heat resistance, and supports semiconductor wafers.
  • Temporary fixing resin that can form a temporary fixing material (film-like temporary fixing material, etc.) that can be sufficiently fixed to the substrate and can easily separate the processed semiconductor wafer from the support and the temporary fixing material.
  • a composition can be provided.
  • thermoplastic resin used in the present embodiment is not particularly limited as long as it is a thermoplastic resin or a resin that has a thermoplastic property at least in an uncured state and forms a crosslinked structure after heating.
  • a thermoplastic resin may be used individually by 1 type, and may be used in combination of 2 or more type.
  • thermoplastic resin a (meth) acrylic copolymer having a reactive group (reactive group-containing (meth) acrylic copolymer) is preferable.
  • (Meth) acrylic copolymers include, for example, (meth) acrylic ester copolymers.
  • the (meth) acrylic ester copolymer is a copolymer having a structural unit derived from a (meth) acrylic acid ester.
  • the (meth) acrylic ester copolymer is preferably a copolymer obtained by polymerizing a monomer composition containing (meth) acrylic acid ester as a main component, and (meth) acrylic from the viewpoint of further excellent polarity or heat resistance.
  • a copolymer obtained by polymerizing a monomer composition containing an acid ester and acrylonitrile is more preferred.
  • (meth) acrylic acid esters include methyl acrylate, ethyl acrylate, propyl acrylate, isopropyl acrylate, butyl acrylate, isobutyl acrylate, hexyl acrylate, cyclohexyl acrylate, 2-ethylhexyl acrylate, lauryl acrylate, methyl methacrylate, ethyl methacrylate, and propyl.
  • Examples include methacrylate, isopropyl methacrylate, butyl methacrylate, isobutyl methacrylate, hexyl methacrylate, cyclohexyl methacrylate, 2-ethylhexyl methacrylate, and lauryl methacrylate.
  • Examples of the copolymer based on a specific monomer combination include, for example, a copolymer having a structural unit derived from butyl acrylate and a structural unit derived from acrylonitrile, a structural unit derived from ethyl acrylate, and acrylonitrile. And a copolymer having a derived structural unit.
  • the (meth) acrylic copolymer having a reactive group can be obtained by copolymerizing a monomer composition containing a (meth) acrylic monomer having a reactive group and the above monomer.
  • the reactive group is preferably at least one selected from the group consisting of an epoxy group, a carboxyl group, an acryloyl group, a methacryloyl group, a hydroxyl group and an episulfide group from the viewpoint of further improving the heat resistance.
  • the epoxy group may be included as a glycidyl group. Among these, an epoxy group and a carboxyl group are more preferable from the viewpoint of excellent crosslinkability.
  • examples of the (meth) acrylic monomer having a reactive group include glycidyl acrylate, 4-hydroxybutyl acrylate glycidyl ether, 3,4-epoxycyclohexylmethyl acrylate, glycidyl methacrylate, 4 -Hydroxybutyl methacrylate glycidyl ether and 3,4-epoxycyclohexylmethyl methacrylate.
  • at least one selected from the group consisting of glycidyl acrylate and glycidyl methacrylate is preferable from the viewpoint of further excellent heat resistance.
  • the (meth) acrylic copolymer having a reactive group preferably has a structural unit derived from at least one selected from the group consisting of glycidyl acrylate and glycidyl methacrylate from the viewpoint of further excellent heat resistance.
  • the Tg (glass transition temperature, glass transition point) of the thermoplastic resin is preferably -50 ° C to 50 ° C.
  • a temporarily fixing material such as a film-like temporarily fixing material
  • flexibility can be secured, and low temperature sticking property Can be easily suppressed.
  • bumps or the like are present on the semiconductor wafer, it is easy to embed bumps at 150 ° C. or lower.
  • the Tg of the thermoplastic resin (A) is ⁇ 50 ° C. or more, the flexibility becomes too high when a temporary fixing material (film-like temporary fixing material or the like) is formed from the temporary fixing resin composition. Decrease in handleability and peelability can be easily suppressed.
  • Tg of the thermoplastic resin is a value of a midpoint glass transition temperature when the (A) thermoplastic resin is measured using a differential scanning calorimeter (DSC8320, manufactured by Rigaku Corporation).
  • the Tg of the thermoplastic resin (A) was calculated by a method according to JIS K 7121: 1987 by measuring the change in calorie under the measurement conditions of a heating rate of 10 ° C./min and a measurement temperature of ⁇ 80 to 80 ° C. The midpoint glass transition temperature.
  • the weight average molecular weight of the thermoplastic resin is preferably 100,000 or more and 2,000,000 or less, more preferably 120,000 or more and 1.9 million or less, and further preferably 150,000 or more and 1.8 million or less.
  • the weight average molecular weight is 100,000 or more, it becomes easy to ensure the heat resistance of the temporarily fixing resin composition.
  • the weight average molecular weight is 2,000,000 or less, when a temporarily fixing material (film-like temporarily fixing material, etc.) is formed from the temporarily fixing resin composition, the flow is lowered and the adhesiveness (low temperature adhesiveness, etc.) Can be easily suppressed.
  • the weight average molecular weight is measured by gel permeation chromatography (GPC) and is a polystyrene equivalent value using a calibration curve based on standard polystyrene.
  • the weight average molecular weight of (A) the thermoplastic resin can be measured using GPC (HLC-8320GPC manufactured by Tosoh Corporation) under the conditions of an eluent flow rate of 1 mL / min and a column temperature of 40 ° C. Tetrahydrofuran can be used as the eluent.
  • GPC gel permeation chromatography
  • the (meth) acrylic copolymer having a reactive group contains glycidyl acrylate and / or glycidyl methacrylate as a copolymerization component (a monomer component giving a (meth) acrylic copolymer), the total of these contents is The content is preferably 0.1 to 20% by mass, more preferably 0.5 to 15% by mass, and still more preferably 1.0 to 10% by mass, based on the total amount of copolymerization components.
  • a temporarily fixing material film-like temporarily fixing material, etc.
  • the (meth) acrylic copolymer having a reactive group as described above a polymer obtained by a polymerization method such as pearl polymerization or solution polymerization may be used, or HTR-860P-3CSP (Nagase ChemteX). Commercially available products such as HTR-860P-3CSP-30B (manufactured by Nagase ChemteX Corporation) may be used.
  • the content of the component (A) is preferably 15% by mass or more and 40% by mass or less based on the total mass of the solid content of the resin composition from the viewpoint of easily forming a film.
  • thermosetting resin thermosetting resin>
  • the (B) thermosetting resin used in the present embodiment is not particularly limited as long as it is cured by heat.
  • thermosetting resin examples include epoxy resin, acrylic resin, silicone resin, phenol resin, thermosetting polyimide resin, polyurethane resin, melamine resin, and urea resin.
  • a thermosetting resin may be used individually by 1 type, and may be used in combination of 2 or more type.
  • an epoxy resin curing agent it is preferable to use an epoxy resin curing agent together.
  • the epoxy resin is not particularly limited as long as it is cured and has a heat resistance.
  • the epoxy resin include bifunctional epoxy resins such as bisphenol A type epoxy resin and bisphenol F type epoxy resin; novolak type epoxy resins such as phenol novolac type epoxy resin and cresol novolac type epoxy resin.
  • the epoxy resin a generally known resin such as a polyfunctional epoxy resin, a glycidylamine type epoxy resin, a heterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin can be applied.
  • Examples of the bisphenol A type epoxy resin include Japan Epoxy Resin Co., Ltd. Epicoat Series (Epicoat 807, Epicoat 815, Epicoat 825, Epicoat 827, Epicoat 828, Epicoat 834, Epicoat 1001, Epicoat 1004, Epicoat 1007, Epicoat 1009, "Epicoat” DER-330, DER-301 and DER-361 manufactured by Dow Chemical Co .; YD-8125 and YDF-8170 manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., and the like.
  • Examples of the bisphenol F type epoxy resin include YDF-8170C manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.
  • Examples of the phenol novolac type epoxy resin include Epicoat 152 and Epicoat 154 manufactured by Japan Epoxy Resin Co., Ltd., EPPN-201 manufactured by Nippon Kayaku Co., Ltd., and DEN-438 manufactured by Dow Chemical Co., Ltd.
  • cresol novolac type epoxy resin examples include EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, EOCN-1027, and Nippon Kayaku Co., Ltd. YDCN700, YDCN701, YDCN702, YDCN703, YDCN704, etc., manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.
  • Epon 1031S manufactured by Japan Epoxy Resin Co., Ltd .
  • Araldite 0163 manufactured by Ciba Specialty Chemicals
  • Aldite and "Denacol” are registered trademarks.
  • Epicoat 604 manufactured by Japan Epoxy Resin Co., Ltd .; YH-434 manufactured by Toto Kasei Co., Ltd .; TETRAD-X and TETRAD-C manufactured by Mitsubishi Gas Chemical Company, Inc .; ELM- manufactured by Sumitomo Chemical Co., Ltd. 120 etc. are mentioned.
  • heterocyclic ring-containing epoxy resin examples include Araldite PT810 manufactured by Ciba Specialty Chemicals; ERL4234, ERL4299, ERL4221, and ERL4206 manufactured by UCC.
  • An epoxy resin may be used individually by 1 type, and may be used in combination of 2 or more type.
  • an epoxy resin curing agent When using an epoxy resin, it is preferable to use an epoxy resin curing agent.
  • the epoxy resin curing agent a known curing agent that is usually used can be used.
  • the epoxy resin curing agent include amines; polyamides; acid anhydrides; polysulfides; boron trifluoride; bisphenols having two or more phenolic hydroxyl groups in one molecule such as bisphenol A, bisphenol F, and bisphenol S.
  • Phenolic novolac resins bisphenol A novolak resins, phenol aralkyl resins, biphenyl aralkyl type phenol resins, phenol resins such as cresol novolac resins, and the like.
  • a phenol resin is preferable, and at least one selected from the group consisting of a phenol novolak resin, a bisphenol A novolak resin, a phenol aralkyl resin, a biphenyl aralkyl type phenol resin, and a cresol novolak resin is more preferable. .
  • Preferred curing agents among the phenolic resin curing agents include, for example, trade names: Phenolite LF2882, Phenolite LF2822, Phenolite TD-2090, Phenolite TD-2149, Phenolite VH-4150, and DIC Corporation.
  • Phenolite VH4170 Meiwa Kasei Co., Ltd. trade name: H-1, Japan Epoxy Resin Co., Ltd. trade name: Epicure MP402FPY, Epicure YL6065, Epicure YLH129B65, Mitsui Chemicals Co., Ltd. trade names: Mirex XL, Mirex XLC , Mirex RN, Mirex RS, Mirex VR, and Nippon Kayaku Co., Ltd. trade name: Kayahard GPH-103 ("Phenolite", “Epicure”, “Millex”, "Kayahard” Trademark).
  • the content of the (B) thermosetting component in the resin composition for temporary fixing according to the present embodiment is (A) heat from the viewpoint that the low-temperature sticking property, heat resistance and curability can be achieved at a higher level.
  • the following ranges are preferable with respect to 100 parts by mass of the plastic resin.
  • the content of the thermosetting component has further improved adhesive properties (low temperature adhesive properties, etc.) and heat resistance, and it has been suppressed that the retainability at the time of back grinding is lowered due to low elasticity.
  • the content of the thermosetting component is preferably 500 parts by mass or less, more preferably 400 parts by mass or less from the viewpoint of suppressing the viscosity before curing from being lowered and further suppressing the time required for curing. Is more preferably 300 parts by mass or less, and particularly preferably 250 parts by mass or less. From these viewpoints, the content of the thermosetting component (B) is preferably 10 to 500 parts by mass, and more preferably 50 to 300 parts by mass.
  • (meth) acrylic monomer As the (C) (meth) acrylic monomer used in this embodiment, a (meth) acrylic monomer having two or more functional groups can be used, and a bifunctional (meth) acrylate or a trifunctional or more polyfunctional one can be used. Any of (meth) acrylates can be used and is not particularly limited.
  • bifunctional (meth) acrylate examples include ethylene glycol di (meth) acrylate, diethylene glycol di (meth) acrylate, triethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, and polyethylene glycol di (meth).
  • aliphatic (meth) acrylates such as neopentyl glycol type epoxy (meth) acrylate; cyclohexanedimethanol type epoxy (meth) acrylate, hydrogenated bisphenol A type epoxy
  • trifunctional or higher polyfunctional (meth) acrylates examples include trimethylolpropane tri (meth) acrylate, ethoxylated trimethylolpropane tri (meth) acrylate, propoxylated trimethylolpropane tri (meth) acrylate, and ethoxylated propoxylated tri Methylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, ethoxylated pentaerythritol tri (meth) acrylate, propoxylated pentaerythritol tri (meth) acrylate, ethoxylated propoxylated pentaerythritol tri (meth) acrylate, pentaerythritol Tetra (meth) acrylate, ethoxylated pentaerythritol tetra (meth) acrylate, propoxylated pentaerythritol
  • Each of the bifunctional (meth) acrylate and the trifunctional or higher polyfunctional (meth) acrylate may be used alone or in combination of two or more.
  • a bifunctional (meth) acrylate or a polyfunctional (meth) acrylate having three or more functions and other polymerizable compounds may be used in combination.
  • the content of (C) (meth) acrylic monomer in the temporarily fixing resin composition according to the present embodiment can be easily cured for a short time, and from the viewpoint of being able to easily obtain sufficient low-temperature sticking properties.
  • the content of (C) (meth) acrylic monomer is preferably 5 parts by mass or more, more preferably 10 parts by mass or more, still more preferably 30 parts by mass or more, and 50 parts by mass or more from the viewpoint of easy curing for a short time. Is particularly preferred.
  • the content of the (meth) acrylic monomer is such that the film after curing is suppressed from becoming less elastic, and the retention during back grinding is suppressed from being lowered, so that the wafer is likely to break. From the viewpoint of being suppressed, it is preferably 200 parts by mass or less, more preferably 150 parts by mass or less, and still more preferably 100 parts by mass or less. From these viewpoints, the content of (C) (meth) acrylic monomer is preferably 5 to 200 parts by mass, and more preferably 10 to 150 parts by mass.
  • ⁇ (D) component a compound that generates a base and a radical by radiation>
  • the compound which generates a base and a radical by radiation (radiation irradiation) used in the present embodiment is not particularly limited as long as it initiates polymerization by irradiation with actinic rays such as ultraviolet rays (UV) and visible rays. .
  • the compound that generates a base and a radical by radiation is not particularly limited, and examples thereof include ⁇ -aminoketone compounds.
  • ⁇ -aminoketone compounds include 2-benzyl-2-dimethylamino-1- (4-morpholin-4-ylphenyl) -butan-1-one, 2-dimethylamino-2- (4-methylbenzyl)- 1- (4-Morpholin-4-ylphenyl) -butan-1-one, 1,2-methyl-1- [4- (methylthio) phenyl]-(4-morpholin) -2-ylpropane-1 -ON and the like.
  • the component (D) such as ⁇ -aminoketone compound
  • the component (D) such as ⁇ -aminoketone compound
  • the component (D) is dissociated, and a photoreactive monomer polymerization reaction occurs with the generation of radicals.
  • dissociation of the component (D) reduces the steric hindrance so that an activated base (such as amine) is present.
  • a base (amine or the like) has a hardening accelerating action of the thermosetting resin, and thereafter a hardening accelerating action is activated by heating.
  • a hardening accelerating action is activated by heating.
  • there is no radical and activated base such as amine
  • a temporary fixing material having excellent storage stability at room temperature is provided.
  • the curing rate of the photoreactive monomer and the thermosetting resin varies depending on the structure of radicals and bases (amine, etc.) generated by radiation irradiation, the component (D) can be appropriately determined. .
  • the content of the component (D) in the temporarily fixing resin composition according to the present embodiment is (A) from the viewpoint that curing at a low temperature and short time can be easily achieved due to the generation of a sufficient amount of base and radical.
  • 1 mass part or more is preferable with respect to 100 mass parts of thermoplastic resins, 2 mass parts or more are more preferable, and 4 mass parts or more are still more preferable.
  • the content of the component (D) is preferably 70 parts by mass or less and more preferably 65 parts by mass or less with respect to 100 parts by mass of the thermoplastic resin (A) from the viewpoint that low-temperature short-time curing can be easily achieved. 60 parts by mass or less is more preferable.
  • the content of the component (D) in the resin composition for temporary fixing according to the present embodiment is (C) (meth) acrylic monomer 100 from the viewpoint that curing at a low temperature and short time is possible by generating a sufficient amount of radicals. It is 5 mass parts or more with respect to a mass part.
  • the content of the component (D) is preferably 10 parts by mass or more, and 20 parts by mass or more with respect to 100 parts by mass of the (C) (meth) acrylic monomer, from the viewpoint that curing at low temperature and short time can be easily achieved. More preferably, 30 parts by mass or more is further preferable, and 40 parts by mass or more is particularly preferable.
  • the content of the component (D) is (C )
  • 100 parts by mass or less is preferable with respect to 100 parts by mass of the (C) (meth) acrylic monomer, 75 mass parts or less are more preferable, and 50 mass parts or less are still more preferable.
  • the content of the component (D) is preferably 5 to 100 parts by mass and more preferably 10 to 50 parts by mass with respect to 100 parts by mass of the (C) (meth) acrylic monomer.
  • the temporarily fixing resin composition according to the present embodiment generates (A) a thermoplastic resin, (B) a thermosetting resin, (C) a (meth) acrylic monomer, and (D) a base and a radical by radiation.
  • (E) a silicone compound, (F) a curing accelerator, (G) an inorganic filler, an organic solvent, and / or other components can be contained as necessary.
  • the silicone compound is not particularly limited as long as it is a compound having a polysiloxane structure. Silicone-modified resins, poly-modified silicone compounds (such as polyether-modified silicone compounds), straight silicone oils, non-reactive modified silicone oils And reactive modified silicone oils. A silicone compound may be used individually by 1 type, and may be used in combination of 2 or more type.
  • the (E) silicone compound used in the present embodiment is a silicone-modified resin
  • a silicone-modified alkyd resin is preferable.
  • the temperature is 100 ° C. or less. It can be easily peeled off without using a solvent at a low temperature.
  • a method for obtaining a silicone-modified alkyd resin for example, (i) a method using a normal synthetic reaction for obtaining an alkyd resin (that is, an organopolysiloxane is reacted with a polyhydric alcohol, a fatty acid, a polybasic acid, etc. And (ii) a method of reacting a general alkyd resin synthesized in advance with an organopolysiloxane.
  • Examples of the polyhydric alcohol used as a raw material for the alkyd resin include dihydric alcohols such as ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, trimethylene glycol, tetramethylene glycol, and neopentyl glycol; glycerin, trimethylolethane, Examples include trihydric alcohols such as trimethylolpropane; tetrahydric or higher polyhydric alcohols such as diglycerin, triglycerin, pentaerythritol, dipentaerythritol, mannitol, and sorbit.
  • a polyhydric alcohol may be used individually by 1 type, and may be used in combination of 2 or more type.
  • polybasic acid used as a raw material for the alkyd resin examples include aromatic polybasic acids such as phthalic anhydride, terephthalic acid, isophthalic acid, and trimetic acid; aliphatic saturated polybasic acids such as succinic acid, adipic acid, and sebacic acid.
  • Basic acid aliphatic unsaturated polybasic acid such as maleic acid, maleic anhydride, fumaric acid, itaconic acid, citraconic anhydride; cyclopentadiene-maleic anhydride adduct, terpene-maleic anhydride adduct, rosin-maleic anhydride
  • polybasic acids by Diels-Alder reaction such as acid adducts.
  • a polybasic acid may be used individually by 1 type, and may be used in combination of 2 or more type.
  • the alkyd resin may further contain a modifying agent or a crosslinking agent.
  • modifiers examples include octylic acid, lauric acid, palmitic acid, stearic acid, oleic acid, linoleic acid, linolenic acid, eleostearic acid, ricinoleic acid, dehydrated ricinoleic acid, or coconut oil, linseed oil, kiri oil, castor Oil, dehydrated castor oil, soybean oil, safflower oil, and these fatty acids can be used.
  • denaturant may be used individually by 1 type and may be used in combination of 2 or more type.
  • the temporarily fixing resin composition when the temporarily fixing resin composition according to this embodiment contains a silicone-modified alkyd resin, the temporarily fixing resin composition further contains a crosslinking agent capable of thermally crosslinking the silicone-modified alkyd resin and / or a catalyst.
  • a crosslinking agent capable of thermally crosslinking the silicone-modified alkyd resin and / or a catalyst.
  • the crosslinking agent include amino resins such as melamine resin and urea resin. In this case, it is possible to further improve the heat resistance and peelability of the temporarily fixing material (film-like temporarily fixing material or the like) formed from the temporarily fixing resin composition.
  • crosslinking agent examples include amino resins (melamine resins, urea resins, etc.), urethane resins, epoxy resins, and phenol resins. Among these, when an amino resin is used, an amino alkyd resin crosslinked with an amino resin is preferably obtained. Examples of such silicone-modified alkyd resins include Tesfine 319 and TA31-209E (trade name, manufactured by Hitachi Chemical Co., Ltd.). A crosslinking agent may be used individually by 1 type, and may be used in combination of 2 or more type.
  • an acidic catalyst can be used as a curing catalyst.
  • an acidic catalyst It can select suitably from well-known acidic catalysts as a crosslinking reaction catalyst of an alkyd resin, and can use it.
  • an acidic catalyst for example, an organic acidic catalyst such as p-toluenesulfonic acid and methanesulfonic acid is suitable.
  • An acidic catalyst may be used individually by 1 type, and may be used in combination of 2 or more type.
  • the content of the acidic catalyst is usually 0.1 to 40 parts by weight, preferably 0.5 to 30 parts by weight, more preferably 1 to 20 parts by weight with respect to 100 parts by weight as the total of the alkyd resin and the crosslinking agent. It is selected in the range of the part.
  • the surface free energy of the silicone-modified alkyd resin is preferably 15 to 30 mN / m.
  • the temporary fixing resin composition preferably contains a silicone-modified alkyd resin having a surface free energy of 15 to 27 mN / m, more preferably from 15 to 24 mN / m, from the viewpoint of further excellent heat resistance. More preferably, it contains an alkyd resin.
  • the surface free energy was measured with a contact angle meter (manufactured by Kyowa Interface Science Co., Ltd.) on a 0.3 ⁇ m thick film obtained by applying a silicone-modified alkyd resin on a PET film and drying at 150 ° C. for 30 seconds.
  • CA-X type can be used to measure the contact angles of water, ethylene glycol and methyl iodide, and can be calculated using surface free energy analysis software (EG-2 manufactured by Kyowa Interface Science Co., Ltd.).
  • the content of the (E) silicone compound in the temporarily fixing resin composition according to the present embodiment facilitates the viewpoint of excellent balance between solubility and adhesiveness, and adhesion and releasability after semiconductor wafer processing. From the standpoint of compatibility, the following ranges are preferable with respect to 100 parts by mass of (A) thermoplastic resin.
  • the content of the silicone compound is more preferably 1.0 part by mass or more, and 5.0 parts by mass from the viewpoint that the releasability after processing of the semiconductor wafer is further excellent and the wafer tends to be prevented from cracking.
  • the above is more preferable, 10 parts by mass or more is further preferable, 30 parts by mass or more is particularly preferable, and 50 parts by mass or more is extremely preferable.
  • the content of the silicone compound is preferably 100 parts by mass or less, more preferably 80 parts by mass or less, and still more preferably 70 parts by mass or less, from the viewpoint that sufficient adhesion to the wafer tends to be obtained. From these viewpoints, the content of the (E) silicone compound is preferably 1.0 to 100 parts by mass, and more preferably 5.0 to 80 parts by mass.
  • (F) curing accelerators include imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, and 1,8 -Diazabicyclo [5,4,0] undecene-7-tetraphenylborate.
  • a hardening accelerator may be used individually by 1 type, and may be used in combination of 2 or more type.
  • the content of the (F) curing accelerator in the temporarily fixing resin composition according to the present embodiment is preferably 50 parts by mass or less, more preferably 20 parts by mass or less, with respect to 100 parts by mass of the (A) thermoplastic resin. 10 mass parts or less are still more preferable, and 1 mass part or less is especially preferable.
  • the content of the curing accelerator is within the above range, it is possible to obtain better storage stability while obtaining sufficient curability.
  • the content is 50 parts by mass or less, sufficient storage stability is easily obtained, and sufficient low-temperature sticking property is easily obtained.
  • (F) Although there is no restriction
  • Examples of the inorganic filler include metal fillers such as silver powder, gold powder, and copper powder; non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, iron oxide, and ceramic.
  • the inorganic filler can be selected according to the desired function.
  • the metal filler can be added for the purpose of imparting thixotropy to the temporarily fixing resin composition.
  • the nonmetallic inorganic filler can be added for the purpose of imparting low thermal expansion or low hygroscopicity to the temporarily fixing resin composition.
  • An inorganic filler may be used individually by 1 type, and may be used in combination of 2 or more type.
  • the inorganic filler is preferably a filler having an organic group on the surface.
  • the surface of the inorganic filler is modified with an organic group, so that dispersibility in an organic solvent when preparing a temporarily fixing resin composition, and a temporarily fixing material (film) formed from the temporarily fixing resin composition It is easy to improve the adhesion and heat resistance of the temporary fixing material.
  • the inorganic filler having an organic group on the surface can be obtained, for example, by mixing a silane coupling agent represented by the following general formula (B-1) and an inorganic filler and stirring at a temperature of 30 ° C. or higher. .
  • the modification of the surface of the inorganic filler with an organic group can be confirmed by UV (ultraviolet) measurement, IR (infrared) measurement, XPS (X-ray photoelectron spectroscopy) measurement, or the like.
  • X represents an organic group selected from the group consisting of a phenyl group, a glycidoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, a vinyl group, an isocyanate group, and a methacryloxy group;
  • R 11 , R 12 and R 13 each independently represents an alkyl group having 1 to 10 carbon atoms.
  • alkyl group having 1 to 10 carbon atoms examples include methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, isopropyl group and isobutyl group. It is done.
  • the alkyl group having 1 to 10 carbon atoms is preferably a methyl group, an ethyl group or a pentyl group from the viewpoint of easy availability.
  • X is preferably an amino group, a glycidoxy group, a mercapto group or an isocyanate group, more preferably a glycidoxy group or a mercapto group, from the viewpoint of further excellent heat resistance.
  • s is preferably 0 to 5, and more preferably 0 to 4, from the viewpoint of suppressing film flow during high heat and further improving heat resistance.
  • silane coupling agent examples include trimethoxyphenylsilane, dimethyldimethoxyphenylsilane, triethoxyphenylsilane, dimethoxymethylphenylsilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (2-methoxyethoxy) silane, N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3- Glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane
  • 3-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, and 3-mercaptopropyltrimethoxysilane are preferable, and trimethoxyphenylsilane, 3-glycol Sidoxypropyltrimethoxysilane and 3-mercaptopropyltrimethoxysilane are more preferable.
  • a silane coupling agent may be used individually by 1 type, and may be used in combination of 2 or more type.
  • the amount of the silane coupling agent used is preferably 0.01 to 50 parts by mass with respect to 100 parts by mass of the inorganic filler, from the viewpoint of balancing the effect of further improving the heat resistance and the storage stability. .05 to 20 parts by mass is more preferable, and from the viewpoint of further improving the heat resistance, 0.5 to 10 parts by mass is more preferable.
  • the content of the (G) inorganic filler in the temporarily fixing resin composition according to the present embodiment is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, with respect to 100 parts by mass of the (A) thermoplastic resin. 100 parts by mass or less is more preferable.
  • the minimum of content of an inorganic filler does not have a restriction
  • the temporary fixing resin composition according to this embodiment can further contain an organic filler.
  • the organic filler include carbon, rubber filler, silicone fine particles, polyamide fine particles, and polyimide fine particles.
  • the content of the organic filler is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, and still more preferably 100 parts by mass or less with respect to (A) 100 parts by mass of the thermoplastic resin.
  • limiting in particular in content of an organic filler It is preferable that it is 5 mass parts or more with respect to 100 mass parts of (A) thermoplastic resins.
  • the resin composition for temporary fixing according to the present embodiment may be diluted with an organic solvent as necessary, and may contain an organic solvent.
  • the organic solvent is not particularly limited, but can be determined in consideration of the volatility during film formation from the boiling point.
  • a relatively low boiling point solvent such as methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, methyl isobutyl ketone, toluene, xylene is used during film formation. This is preferable in that the curing of the film does not proceed.
  • a solvent having a relatively high boiling point such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, cyclohexanone.
  • An organic solvent may be used individually by 1 type, and may be used in combination of 2 or more type.
  • the solid content concentration of the temporarily fixing resin composition according to the present embodiment is preferably 10 to 80% by mass.
  • the temporarily fixing resin composition generates (A) a thermoplastic resin, (B) a thermosetting resin, (C) a (meth) acrylic monomer, and (D) a base and a radical by radiation. And (E) a silicone compound, (F) a curing accelerator, (G) an inorganic filler, an organic solvent, and other components, if necessary, can be prepared by mixing and kneading. Mixing and kneading can be performed by appropriately combining dispersers such as a normal stirrer, a raking machine, a three-roller, and a bead mill.
  • dispersers such as a normal stirrer, a raking machine, a three-roller, and a bead mill.
  • the temporarily fixing resin film according to the present embodiment is formed by forming the temporarily fixing resin composition according to the present embodiment into a film shape.
  • the temporarily fixing resin film according to this embodiment is a film-like temporarily fixing resin composition, and includes the temporarily fixing resin composition according to this embodiment.
  • the temporarily fixing resin film sheet according to the present embodiment includes a supporting film having releasability and the temporarily fixing resin film according to the present embodiment, and the temporarily fixing resin film is provided on the supporting film. It has been.
  • the temporarily fixing resin film according to the present embodiment can be easily manufactured by, for example, applying a temporarily fixing resin composition to a support film. Moreover, when the resin composition for temporary fixing is diluted with the organic solvent, it can manufacture by apply
  • a protective film can be attached to the temporarily fixing resin film provided on the support film, if necessary.
  • a temporary fixing resin film sheet having a three-layer structure composed of a support film, a temporary fixing resin film, and a protective film, which will be described later, can be obtained.
  • the temporary fixing resin film sheet thus obtained can be easily stored by, for example, winding it into a roll. Moreover, a roll-shaped film can be cut out into a suitable size and stored in a sheet shape.
  • FIG. 1 (A) is a top view showing an embodiment of a temporarily fixing resin film sheet
  • FIG. 1 (B) is a schematic cross-sectional view taken along line II in FIG. 1 (A).
  • a temporary fixing resin film sheet 1 shown in FIG. 1 includes a support film 10 having releasability, a temporary fixing resin film 20 provided on the supporting film 10, and a supporting film 10 of the temporary fixing resin film 20. Includes a protective film 30 provided on the opposite side.
  • the constituent material of the support film 10 is not particularly limited, and examples thereof include polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyethylene, polypropylene, polyamide, and polyimide.
  • the constituent material of the support film 10 is preferably polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polypropylene, polyamide, or polyimide from the viewpoint of excellent flexibility and toughness.
  • it is preferable to use as the support film a film that has been subjected to a release treatment with a silicone compound, a fluorine compound, or the like.
  • the thickness of the support film 10 may be appropriately changed depending on the intended flexibility, but is preferably 3 to 250 ⁇ m, more preferably 5 to 200 ⁇ m, and still more preferably 7 to 150 ⁇ m. If the thickness is 3 ⁇ m or more, the film strength is sufficient. If the thickness is 250 ⁇ m or less, sufficient flexibility can be obtained.
  • the thickness of the temporarily fixing resin film 20 according to the present embodiment is not particularly limited, but is preferably 5 to 300 ⁇ m after drying. If thickness is 5 micrometers or more, since thickness is enough, the intensity
  • a plurality of previously formed films having a thickness of 100 ⁇ m or less may be bonded together.
  • the residual solvent when the thick film is produced can be easily reduced.
  • the viscosity at 120 ° C. before irradiation of the temporarily fixing resin film 20 according to the present embodiment is preferably 200 to 6000 Pa ⁇ s from the viewpoint of excellent handleability of the film and stickability to a wafer (low temperature sticking property, etc.). . If the viscosity is 200 Pa ⁇ s or more, the film is too soft and the film is prevented from being difficult to handle. If the viscosity is 6000 Pa ⁇ s or less, it is too hard to prevent a sufficient sticking property (low temperature sticking property, etc.) from being obtained. Furthermore, the viscosity of the temporarily fixing resin film 20 according to the present embodiment at 120 ° C. after radiation irradiation is preferably 1000 to 10,000 Pa ⁇ s.
  • the viscosity can be measured by the following method. Three temporary fixing resin films having a thickness of 60 ⁇ m are laminated at 80 ° C. to obtain a thickness of 180 ⁇ m, and a measurement method is performed using a rotary viscoelasticity measuring device (ARES, manufactured by T.A. Instruments Co., Ltd.). The temperature was raised to 120 ° C at a heating rate of 20 ° C / min while applying 5% strain at 35 ° C under the conditions of a parallel plate, a measurement jig of 8 mm in diameter, a measurement mode of Dynamic temperature ramp, and a frequency of 1 Hz. And the viscosity at 120 ° C. is measured.
  • the viscosity increase rate (120 ° C.) when stored at 12 ° C. for 12 months (refrigerated storage) before irradiation is preferably 100% or less.
  • the constituent material of the protective film 30 is not particularly limited, and examples thereof include polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyethylene, and polypropylene.
  • the constituent material of the protective film 30 is preferably polyethylene terephthalate, polyethylene, or polypropylene from the viewpoint of excellent flexibility and toughness. Further, from the viewpoint of further improving the peelability from the temporarily fixing resin film (resin layer), it is preferable to use as the protective film a film that has been subjected to a release treatment with a silicone compound, a fluorine compound, or the like.
  • the thickness of the protective film 30 can be appropriately set depending on the intended flexibility, but is preferably 10 to 250 ⁇ m, more preferably 15 to 200 ⁇ m, and still more preferably 20 to 150 ⁇ m. When the thickness is 10 ⁇ m or more, the film strength is sufficient. If the thickness is 250 ⁇ m or less, sufficient flexibility can be obtained.
  • FIG. 2 (A) is a top view showing another embodiment of the temporarily fixing resin film sheet
  • FIG. 2 (B) is a schematic sectional view taken along the line II-II in FIG. 2 (A). .
  • the temporarily fixing resin film sheet 2 shown in FIG. 2 is the same as the temporarily fixing resin film sheet 1 except that the temporarily fixing resin film 20 and the protective film 30 are cut in advance according to the shape of the member to be temporarily fixed. It has the same configuration.
  • the outer edge portions of the temporarily fixed resin film 20 and the protective film 30 that have been cut are removed, but the temporary fixing resin film and the protective film are notched according to the shape of the temporarily fixed member. And the outer edge may be left.
  • the semiconductor wafer processing method includes the following steps (a) to (c) in this order, and optionally includes the following step (d).
  • radiation irradiation is irradiation of active rays, such as an ultraviolet-ray (UV) and visible light.
  • (b) Processing step of processing the semiconductor wafer temporarily fixed to the support (c) ) Separation process for separating the processed semiconductor wafer from the support and the temporary fixing material.
  • D A cleaning process for cleaning when there is a residue in the semiconductor wafer.
  • FIGS. 3A, 3B, and 3C are schematic cross-sectional views for explaining one embodiment of a method for processing a semiconductor wafer
  • FIG. 3D is a semiconductor after processing. It is a top view which shows a wafer.
  • the temporary fixing step is a step of performing radiation irradiation when temporarily fixing the semiconductor wafer to the support via a temporary fixing material. By performing irradiation, a base and a radical are generated, and the reaction starts.
  • the temporary fixing material may be irradiated with radiation before temporarily fixing the semiconductor wafer to the support. After the semiconductor wafer is temporarily fixed to the support, the temporary fixing material is irradiated with radiation. May be.
  • the support is a transparent body (glass carrier or the like)
  • the temporary fixing material can be irradiated with radiation after the semiconductor wafer is temporarily fixed to the support.
  • the support is not a transparent body, it is preferable to irradiate the temporary fixing material with radiation before temporarily fixing the semiconductor wafer to the support.
  • FIG. 3A shows a temporary fixing material (film-like temporary fixing) formed from a temporary fixing resin composition or a temporary fixing resin film between the support 50 and the semiconductor wafer 60.
  • the material etc.) 40 is interposed and the process of temporarily fixing the semiconductor wafer 60 to the support body 50 is shown.
  • the release layer 52 will be described later.
  • the thickness of the semiconductor wafer 60 is not particularly limited, but can be 600 to 800 ⁇ m.
  • the temporarily fixing material 40 can be formed on the element forming surface of the semiconductor wafer 60 by a method such as spin coating.
  • the temporarily fixing resin composition is diluted with an organic solvent, the organic solvent is removed by heating and drying according to the volatilization conditions of the solvent after spin coating to form the temporarily fixing material 40.
  • the temporary fixing material 40 can be provided by laminating the temporary fixing resin film 20 on the element forming surface of the semiconductor wafer 60 using a roll laminator, a vacuum laminator, or the like.
  • the temporary fixing material 40 is thickened by irradiation with 10 to 10000 mJ / cm 2 using a radiation exposure machine (UV exposure machine or the like).
  • irradiation with radiation causes dissociation of the component (D) (such as ⁇ -aminoketone compound) in the temporary fixing material 40, thereby generating radicals and bases (such as amine).
  • the radical causes a polymerization reaction of a photoreactive monomer such as (C) (meth) acrylic monomer, and the base (such as amine) has a curing accelerating action of the thermosetting resin. Curing is accelerated by heating.
  • a pressure of 1 hPa or less, a pressure of 1 MPa, a pressure of 60 to 200 ° C., a holding time of 100 to 300 seconds, and a semiconductor wafer 60 and the support 50 are temporarily fixed via a temporary fixing member 40.
  • a vacuum laminator for example, a vacuum laminator LM-50 ⁇ 50-S (trade name) manufactured by NPC Corporation, a vacuum laminator V130 (trade name) manufactured by Nichigo Morton Co., Ltd., etc. is used.
  • the pressure bonding temperature is 40 to 180 ° C. (preferably 60 to 150 ° C.)
  • the lamination pressure is 0.01 to 0.5 MPa (preferably 0.1 to 0.5 MPa)
  • the holding time is 1 to 600 seconds (preferably 30 to 300).
  • the semiconductor wafer 60 and the support body 50 are temporarily fixed via the temporary fixing material 40.
  • the temporary fixing material 40 is thermally cured by heating at 100 to 200 ° C. for 1 to 60 minutes.
  • the support of this embodiment is not particularly limited, but a substrate such as a silicon wafer, a glass wafer, or a quartz wafer can be used.
  • the support of this embodiment may be subjected to a peeling treatment, and the peeling layer 52 is formed by peeling all or part of the surface of the support 50 as shown in FIG.
  • the release agent used for the release treatment is not particularly limited, but from the viewpoint of further improving the release property, for example, a surface modifier having a fluorine element, a polyolefin wax, a silicone oil, a silicone oil containing a reactive group, and Silicone modified alkyd resins are preferred.
  • a temporary fixing material such as a film-like temporary fixing material having the structure described above
  • a semiconductor wafer can be processed at a high temperature using a support, and the resin composition for temporary fixing at room temperature after processing. Can be peeled off from the semiconductor wafer and the support without adhesive residue.
  • processing in the processing step examples include grinding, electrode formation, metal wiring formation, protective film formation, and the like used at the wafer level.
  • a well-known grinding system can be utilized. The grinding is preferably performed while cooling the semiconductor wafer and a grindstone (such as diamond) with water.
  • the back surface of the semiconductor wafer 60 (that is, the surface opposite to the side in contact with the temporary fixing material 40) of the semiconductor wafer 60 is ground by a grinder 90, and the thickness is, for example, about 700 ⁇ m. Is reduced to 100 ⁇ m or less to obtain a semiconductor wafer 80.
  • DGP-8761 (trade name) manufactured by DISCO Corporation can be cited, and the cutting conditions in this case can be arbitrarily selected according to the desired thickness and grinding state of the semiconductor wafer.
  • metal sputtering for forming electrodes, etc. wet etching for etching a metal sputtering layer, application of a resist for masking metal wiring, formation of a pattern by exposure and development
  • Known processes such as resist stripping, dry etching, metal plating, silicon etching for TSV formation, and oxide film formation on the silicon surface can be used.
  • processing such as dry ion etching or Bosch process is performed on the back side of the thinned semiconductor wafer 80 to form through holes, and then processing such as copper plating is performed to form through electrodes 82.
  • processing such as dry ion etching or Bosch process is performed on the back side of the thinned semiconductor wafer 80 to form through holes, and then processing such as copper plating is performed to form through electrodes 82.
  • An example is shown.
  • FIG. 3D is a top view of the semiconductor wafer 80 after processing.
  • the processed semiconductor wafer 80 is divided into semiconductor elements by dicing along a dicing line 84.
  • FIG. 4 is a schematic cross-sectional view for explaining an embodiment of a separation process for separating a processed semiconductor wafer from a support and a temporary fixing material.
  • the separation process according to the present embodiment includes a first peeling process for peeling the semiconductor wafer from the support and a second peeling process for peeling the temporarily fixing material from the semiconductor wafer.
  • the first peeling step is a step of peeling the semiconductor wafer processed in the processing step from the support, that is, a step of peeling the thinned semiconductor wafer from the support before dicing after various processing. It is.
  • the semiconductor wafer and the support are heated (preferably 200 to 250 ° C.) while being slid in the opposite direction along the horizontal direction, and the semiconductor wafer or the support is separated.
  • One side is fixed horizontally, the other is lifted at a certain angle from the horizontal direction, and a protective film is attached to the ground surface of the ground semiconductor wafer, and the semiconductor wafer and the protective film are supported in a peel method
  • the method etc. which peel from a body are mentioned, it can employ
  • one of the semiconductor wafer 80 and the support 50 as shown in FIG. 4A is fixed horizontally and the other from the horizontal direction.
  • a method of lifting with a certain angle, a method of attaching a protective film to the ground surface of the ground semiconductor wafer, and peeling the semiconductor wafer and the protective film by a peel method are more suitable.
  • These peeling methods are usually carried out at room temperature, but may be carried out at a temperature of about 40 to 100 ° C. without damaging the semiconductor wafer.
  • a debonder manufactured by SSUS Co., Ltd., DB12T
  • a De-Bonding device manufactured by EVG, EVG805EZD, or the like
  • EVG EVG805EZD
  • the semiconductor wafer 80 is fixed horizontally and the end of the temporary fixing material 70 is lifted at a certain angle from the horizontal direction.
  • the semiconductor wafer 80 from which the temporary fixing material is peeled can be obtained (see FIG. 4C).
  • a temporarily fixed material is formed using the temporary fixing resin composition according to the present embodiment, so that a processed semiconductor wafer in which residues such as adhesive residue are sufficiently reduced can be easily obtained. Can do.
  • a processed semiconductor wafer may be obtained by performing separation between the semiconductor wafer and the temporary fixing material in the first peeling step.
  • ⁇ (D) Cleaning step> A part of the temporarily fixed material tends to remain on the circuit forming surface of the semiconductor wafer.
  • a cleaning step for removing the temporary fixing material can be provided.
  • the temporary fixing material can be removed, for example, by washing the semiconductor wafer.
  • the cleaning solution used is not particularly limited as long as it is a cleaning solution that can remove the partially remaining temporary fixing material, and examples thereof include the organic solvents that can be used for dilution of the temporary fixing resin composition.
  • An organic solvent may be used individually by 1 type, and may be used in combination of 2 or more type.
  • bases or acids may be added to the organic solvent.
  • bases such as ethanolamine, diethanolamine, triethanolamine, triethylamine, and ammonia; ammonium salts such as tetramethylammonium hydroxide can be used.
  • the acids that can be used include organic acids such as acetic acid, oxalic acid, benzenesulfonic acid, and dodecylbenzenesulfonic acid.
  • the addition amount is preferably 0.01 to 10% by mass in terms of the concentration in the cleaning liquid.
  • an existing surfactant may be added.
  • the cleaning method is not particularly limited, and examples thereof include a method of performing cleaning with a paddle using the above-described cleaning liquid, a cleaning method by spraying, and a method of immersing in a cleaning liquid tank.
  • the temperature is 10 to 80 ° C., preferably 15 to 65 ° C.
  • the substrate is washed with water or alcohol and dried to obtain a thin semiconductor wafer 80.
  • residues such as adhesive residue can be sufficiently reduced, so that the cleaning step can be omitted.
  • the processed semiconductor wafer 80 is separated into semiconductor elements by dicing along a dicing line 84 (see FIG. 3D).
  • a semiconductor device can be manufactured by connecting the obtained semiconductor element to another semiconductor element or a semiconductor element mounting substrate.
  • FIG. 5 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing a semiconductor device.
  • the semiconductor element 100 in which the through electrode 86 is formed and separated into pieces by the above-described method is prepared (FIG. 5A).
  • a semiconductor device 120 can be obtained by stacking a plurality of semiconductor elements 100 over the wiring substrate 110 (FIG. 5B).
  • HTR-860P-3CSP (meth) acrylic ester copolymer having a weight average molecular weight of 800,000 by GPC, a structural unit derived from glycidyl methacrylate and a structural unit derived from acrylonitrile, 3% by mass of glycidyl methacrylate, Tg of 12 ° C.
  • Acrylic rubber manufactured by Nagase ChemteX Corporation
  • HTR-860P-3CSP-30B (meth) acrylic ester copolymer having a weight average molecular weight of 300,000 by GPC, a structural unit derived from glycidyl methacrylate and a structural unit derived from acrylonitrile, 8% by mass of glycidyl methacrylate, Tg12 °C acrylic rubber (manufactured by Nagase ChemteX Corporation)
  • YDCN-700-10 Cresol novolac type polyfunctional epoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)
  • YDF-8170C Bisphenol F type bifunctional epoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)
  • XLC-LL Phenol aralkyl resin (Mitsui Chemicals)
  • GPH-103 Biphenyl aralkyl type phenol resin (
  • the viscosity was measured by the following method. Three temporary fixing resin films having a thickness of 60 ⁇ m are laminated at 80 ° C. to obtain a thickness of 180 ⁇ m, and a measurement method is performed using a rotary viscoelasticity measuring device (ARES, manufactured by T.A. Instruments Co., Ltd.). The temperature was raised to 120 ° C. at a rate of 20 ° C./min with a 5% distortion at 35 ° C. under the conditions of a parallel plate, a measuring jig of 8 mm in diameter, a measurement mode of Dynamic temperature ramp, and a frequency of 1 Hz. The viscosity at 120 ° C. was measured.
  • the protective film was peeled from the temporary fixing resin film with the protective film and the support film.
  • a vacuum laminator V130 manufactured by Nichigo Morton Co., Ltd. laminating a resin film for temporary fixing to a semiconductor wafer at a pressure of 1 hPa or less, a pressure bonding temperature of 80 ° C., a lamination pressure of 0.5 MPa, and a holding time of 60 seconds (semiconductor wafer) (Lamination of film).
  • the support film was peeled off. Thereby, a semiconductor wafer with a resin film for temporary fixing was obtained.
  • the support and the semiconductor wafer with a resin film for temporary fixing are pressure-bonded at a pressure of 1 hPa or less, a pressure bonding temperature of 100 ° C., a lamination pressure of 0.5 MPa, and a holding time of 100 seconds (
  • the laminate was obtained by crimping the support and the exposed semiconductor wafer with the temporarily fixing resin film (crimping to the support).
  • the state of the resin film for temporary fixing was confirmed using the ultrasonic microscope (SAM, Insight-300 by Insight Co., Ltd.). A sample in which peeling of the temporarily fixing resin film was not observed was evaluated as “ ⁇ ”, and a sample in which peeling was observed was evaluated as “x”.
  • the protective film was peeled after leaving the temporarily fixing resin film in an oven set at 40 ° C. for 5 days. Thereafter, using a vacuum laminator V130 manufactured by Nichigo Morton Co., Ltd., the resin film for temporary fixing was laminated to the semiconductor wafer at a pressure of 1 hPa or less, a pressure bonding temperature of 80 ° C., a lamination pressure of 0.5 MPa, and a holding time of 60 seconds (to the semiconductor wafer). The film was laminated. Subsequently, the support film was peeled off. Thereby, a semiconductor wafer with a resin film for temporary fixing was obtained.
  • the support and the semiconductor wafer with a resin film for temporary fixing are pressure-bonded at a pressure of 1 hPa or less, a pressure bonding temperature of 100 ° C., a lamination pressure of 0.5 MPa, and a holding time of 100 seconds (
  • the laminate was obtained by crimping the support and the exposed semiconductor wafer with the temporarily fixing resin film (crimping to the support).
  • the state of the resin film for temporary fixing was confirmed using the ultrasonic microscope (SAM, Insight-300 by Insight Co., Ltd.). A sample in which peeling of the temporarily fixing resin film was not observed was evaluated as “ ⁇ ”, and a sample in which peeling was observed was evaluated as “x”.
  • the chuck table rotation speed was 300 min ⁇ 1
  • the wheel rotation speed was 1 axis: 3200 min ⁇ 1
  • grinding was performed by a cross-feed method. After grinding to 142 ⁇ m thickness on one axis, grinding was performed to 102 ⁇ m thickness on two axes, and further, grinding was performed to 100 ⁇ m thickness on three axes. A sample in which cracking and deviation did not occur at the end of grinding was evaluated as “ ⁇ ”, and a sample in which cracking or deviation occurred was evaluated as “x”.
  • Comparative Example 1 does not use an ⁇ -aminoketone compound ((D) compound), so that base and radicals are not generated by UV irradiation, and curing at low temperature and short time is insufficient.
  • Comparative Example 2 since there are few ⁇ -aminoketone compounds ((D) compounds), the amount of bases and radicals generated is small when UV irradiation is performed, and curing at low temperature and short time is insufficient.
  • the temporary fixing resin composition according to the present invention and the temporary fixing resin film using the temporary fixing resin composition are processed semiconductor wafers having a temporary fixing step of performing radiation irradiation (UV irradiation or the like). It can be seen that it is suitable for the method.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Adhesive Tapes (AREA)

Abstract

La présente invention concerne une composition de résine destinée à la fixation temporaire servant à former un matériau de fixation temporaire utilisé dans un procédé d'usinage d'une plaquette à semi-conducteur : la composition de résine contenant (A) une résine thermoplastique, (B) une résine thermodurcissable, (C) un monomère (méth)acrylique et (D) un composé à partir duquel une base et un radical sont générés par rayonnement, la quantité contenue du composé (D) étant d'au moins 5 parties en masse par rapport à 100 parties en masse de composé (C); et le procédé d'usinage d'une plaquette à semi-conducteur comprend une étape de fixation temporaire servant à fixer temporairement la plaquette à semi-conducteur à un corps de support à l'aide du matériau de fixation temporaire intercalé entre eux, une étape d'usinage servant à usiner la plaquette à semi-conducteur fixée temporairement au corps de support et une étape de séparation servant à séparer la plaquette à semi-conducteur usinée du corps de support et du matériau de fixation temporaire, le matériau de fixation temporaire étant exposé à un rayonnement dans l'étape de fixation temporaire.
PCT/JP2015/074966 2014-09-05 2015-09-02 Composition de résine pour fixation temporaire, film de résine pour fixation temporaire, feuille de film de résine pour fixation temporaire et procédé d'usinage de plaquette à semi-conducteur Ceased WO2016035821A1 (fr)

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TWI803461B (zh) * 2016-04-28 2023-06-01 日商琳得科股份有限公司 保護膜形成用膜、保護膜形成用複合片、以及能量線硬化性膜與支持片之用途
WO2023105688A1 (fr) * 2021-12-08 2023-06-15 株式会社レゾナック Procédé de fabrication de stratifié et stratifié

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TWI803461B (zh) * 2016-04-28 2023-06-01 日商琳得科股份有限公司 保護膜形成用膜、保護膜形成用複合片、以及能量線硬化性膜與支持片之用途
WO2020129917A1 (fr) * 2018-12-20 2020-06-25 日立化成株式会社 Composition de résine pour utilisation à des fins de fixation temporaire, film de résine pour utilisation à des fins de fixation temporaire, feuille pour utilisation à des fins de fixation temporaire et procédé de fabrication d'un dispositif semi-conducteur
KR20210104065A (ko) * 2018-12-20 2021-08-24 쇼와덴코머티리얼즈가부시끼가이샤 가고정용 수지 조성물, 가고정용 수지 필름 및 가고정용 시트 및 반도체 장치의 제조 방법
JPWO2020129917A1 (ja) * 2018-12-20 2021-11-04 昭和電工マテリアルズ株式会社 仮固定用樹脂組成物、仮固定用樹脂フィルム及び仮固定用シート並びに半導体装置の製造方法
JP7342886B2 (ja) 2018-12-20 2023-09-12 株式会社レゾナック 仮固定用樹脂組成物、仮固定用樹脂フィルム及び仮固定用シート並びに半導体装置の製造方法
US12094749B2 (en) 2018-12-20 2024-09-17 Resonac Corporation Resin composition for temporary fixing use, resin film for temporary fixing use, sheet for temporary fixing use, and method for manufacturing semiconductor device
KR102726591B1 (ko) * 2018-12-20 2024-11-05 가부시끼가이샤 레조낙 가고정용 수지 조성물, 가고정용 수지 필름 및 가고정용 시트 및 반도체 장치의 제조 방법
WO2023105688A1 (fr) * 2021-12-08 2023-06-15 株式会社レゾナック Procédé de fabrication de stratifié et stratifié
JPWO2023105688A1 (fr) * 2021-12-08 2023-06-15
JP7548455B2 (ja) 2021-12-08 2024-09-10 株式会社レゾナック 積層体の作製方法、及び、積層体

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