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WO2016074387A1 - 掩模板 - Google Patents

掩模板 Download PDF

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Publication number
WO2016074387A1
WO2016074387A1 PCT/CN2015/073939 CN2015073939W WO2016074387A1 WO 2016074387 A1 WO2016074387 A1 WO 2016074387A1 CN 2015073939 W CN2015073939 W CN 2015073939W WO 2016074387 A1 WO2016074387 A1 WO 2016074387A1
Authority
WO
WIPO (PCT)
Prior art keywords
mask
spacer
exposure
uniform
height
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2015/073939
Other languages
English (en)
French (fr)
Inventor
卢兵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Chengdu BOE Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US14/785,374 priority Critical patent/US9753365B2/en
Publication of WO2016074387A1 publication Critical patent/WO2016074387A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13398—Spacer materials; Spacer properties
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a mask.
  • a plurality of mask processes are generally performed to form a desired pattern on the color filter substrate.
  • the mask exposure processes commonly used in the prior art are proximity exposure and contact exposure.
  • the difference between proximity exposure and contact exposure is whether the mask and the color filter substrate are separated or adhered during exposure.
  • the contact exposure mask is pressed on the color filter substrate of the photoresist, and the mask is easily contaminated due to the direct contact between the mask and the color filter substrate, so the proximity exposure is more commonly used than the contact exposure.
  • the proximity exposure mask is located in a certain range above the color film substrate, and the mask is not in contact with the color filter substrate, but it is also difficult to make a gap between the mask and the color filter substrate because the mask and the color filter substrate are not in contact with each other.
  • the uniform spacing is ensured, that is, the exposure interval during exposure is inconsistent, resulting in inconsistent exposure pattern shape errors and uneven exposure pattern size after exposure. Therefore, it is an important subject to be solved by those skilled in the art to provide a mask capable of maintaining the exposure pitch uniform so that the exposed exposure pattern can have a uniform exposure pattern shape variable and a uniform exposure pattern size.
  • the present invention provides a reticle that is capable of maintaining uniform exposure pitches such that the exposure pattern has a uniform exposure pattern shape variable and a uniform exposure pattern size.
  • the present invention provides a mask comprising an opaque region and a light transmissive region, and a spacer of uniform height is disposed in the opaque region.
  • the height of the spacer is 100-300 ⁇ m.
  • the edge of the spacer is 3-10 ⁇ m from the edge of the opaque region.
  • the spacer is located in a central region within the opaque region.
  • the spacers are of a continuous distribution or a discrete distribution.
  • the continuous distribution of the spacers has a distribution density of one spacer per 24 to 36 sub-pixel units.
  • the spacer has a shape of any one of a cylindrical shape, a square column shape, a prism shape, and a spherical shape.
  • the present invention also provides another mask comprising an effective display area and an ineffective display area, wherein the ineffective display area is provided with a spacer of uniform height.
  • the height of the spacer is 100-300 ⁇ m.
  • the continuous distribution of the spacers has a distribution density of one spacer per 200,000 to 1,000,000 sub-pixel units.
  • the present invention provides a mask exposure processing method using the mask according to the present invention, comprising the steps of:
  • the present invention provides a mask in which a spacer of a uniform height is disposed in an opaque region of the mask, and the mask is brought into contact with the color filter substrate by the spacer, so that during exposure processing,
  • the height of the spacers is uniform, so that the spacing between the entire mask and the color filter substrate is kept consistent, that is, the uniform exposure interval can be maintained, so that the exposure pattern obtained after the exposure of the mask has a uniform exposure pattern shape variable and Uniform exposure graphic size.
  • FIG. 1 is a schematic diagram of a mask according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of another mask according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of an exposure processing method using a mask provided in accordance with an embodiment of the present invention.
  • an embodiment of the present invention provides a mask 10 including an opaque region 11 and a light transmissive region 12 , and a spacer 13 having a uniform height is disposed in the opaque region 11 .
  • the reticle generally includes an effective display area and an invalid display area.
  • the effective display area is the graphic area of the mask, corresponding to the area where the pattern is formed after the exposure processing of the mask on the substrate, and the invalid display area is the area between each cell of the effective display area, corresponding to the exposure of the mask on the substrate.
  • the area where the areas between the areas where the pattern is formed is the area that needs to be cut and removed in the subsequent process.
  • the effective display area is generally divided into an opaque area and a light-transmitting area.
  • the opaque region is typically an opaque chrome (Cr) layer for forming a pattern corresponding to the reticle on the substrate.
  • Cr opaque chrome
  • a spacer is used to support the reticle.
  • the spacers known in the prior art can be applied to the present invention, and the manufacturing method and material of the present invention are not limited.
  • the mask provided by the embodiment of the present invention can provide a highly uniform spacer in the opaque region of the mask through the photoresist process commonly used in the prior art.
  • Embodiments of the present invention provide a mask in which a spacer having a uniform height is disposed in an opaque region of the mask, and the mask is brought into contact with the color filter substrate by using the spacer, so that during exposure processing Since the height of the spacers is uniform, the spacing between the entire mask and the color filter substrate is kept uniform, that is, the uniform exposure interval can be maintained, so that the exposure pattern obtained when the mask is exposed has a uniform exposure pattern. Variable and uniform exposure graphic size.
  • the spacer 13 may have a height of 100-300 ⁇ m.
  • the height of the spacer 13 is set within the above range, mainly because, in the prior art, the proximity exposure is for safety reasons, and the exposure pitch must be within a certain safe range to prevent the mask and the substrate. Collision and contamination of the mask, the exposure interval is large, and the deflection of the light when exposed is large, thereby increasing the deviation of the exposure pattern shape variable and the exposure pattern size. Since this certain safe range is usually large, prior art proximity exposures typically have large exposure pattern shape variable deviations and pattern size deviations.
  • the height of the spacer is the spacing between the mask and the color filter substrate when the mask is exposed, that is, the exposure interval during exposure, that is, the exposure interval of the mask may be 100-300 ⁇ m when exposed.
  • the distance is much smaller than the "safe range" in the prior art.
  • the mask 10 has a small exposure pitch when exposed, thereby having a small exposure pattern shape variable deviation and an exposure pattern size deviation.
  • the height of the spacer may be 100 ⁇ m, 110 ⁇ m, 120 ⁇ m, 130 ⁇ m, 140 ⁇ m, 150 ⁇ m, 200 ⁇ m, 250 ⁇ m, or 300 ⁇ m.
  • the height of the spacer 13 can theoretically be infinitely small, so that an infinitely small exposure pattern shape variable deviation and pattern size deviation can be theoretically obtained. It is to be understood that, as the process is developed, spacers having a height of less than 100 ⁇ m are also included in the scope of the present invention, such as 80 ⁇ m, 70 ⁇ m, 60 ⁇ m, 50 ⁇ m, 40 ⁇ m, 30 ⁇ m, 20 ⁇ m, 10 ⁇ m, 5 ⁇ m, and the like. It can be understood that the height of the spacer 13 is set to be smaller, and the exposure pattern size deviation can be more strictly controlled, and is particularly suitable for a narrow line width product.
  • the edge of the spacer 13 may be 3-10 ⁇ m from the edge of the opaque region 11.
  • the spacer 13 is disposed in the opaque region 11 of the mask 10 and does not exceed the opaque region 11, so that the spacer 13 does not affect the exposure effect of the mask 10 during exposure.
  • the smaller the edge of the spacer from the edge of the opaque area the larger the contact surface of the spacer in the opaque area, i.e., the spacer has a larger support surface for the reticle. In this way, the mask can be better prevented from having different curvatures, so that when the mask is in contact with the color filter substrate through the spacer, it is better to ensure a uniform spacing between the mask and the color filter substrate as a whole.
  • the edge of the spacer is smaller from the edge of the opaque region, and the influence of the spacer on the mask pattern is also likely to occur when the mask is exposed.
  • Setting the edge of the spacer 13 to be 3-10 ⁇ m from the edge of the opaque region 11 is advantageous for having a uniform height spacing between the reticle and the color filter substrate, having a uniform exposure pitch, and also beneficial for the spacer during exposure.
  • the object does not affect the graphical effect of the mask.
  • the edge of the spacer may be 4 ⁇ m, 5 ⁇ m, 6 ⁇ m, 7 ⁇ m, 8 ⁇ m, 9 ⁇ m or 10 ⁇ m from the opaque region.
  • the spacer 13 may be located in a central region of the opaque region 11 in the opaque region 11. In this way, the spacer can uniformly support the mask in the opaque region, ensuring that the curvature of the entire mask plane is uniform, thereby facilitating the uniformity of the exposure pitch.
  • the spacer may also be located in a non-central region in the opaque region 11, in which case the spacer may also support the mask when the mask is exposed. Role to ensure a consistent curvature of the reticle.
  • the spacers 13 may be distributed continuously or discretely within the opaque region 11. That is, one or more spacers may be disposed in each of the opaque regions, or one spacer may be disposed in each of the two or more opaque regions.
  • the continuous distribution of the spacers in the opaque region facilitates the spacer to uniformly support the mask, thereby facilitating the uniform curvature of the mask, thereby facilitating the uniformity of the exposure pitch.
  • the distribution density of the spacer 13 continuous distribution may be one spacer per 24 to 36 sub-pixel units, that is, 24 intervals per subpixel unit.
  • One to 36 sub-pixel units are provided with a spacer.
  • the density is large, and the manufacturing cost of the mask is also increased accordingly, and the excessively dense spacers are mutually squeezed, and the spacers cause the collapse and deformation of the spacers to cause the mask and the color film.
  • the spacing between the substrates is inconsistent. Therefore, one spacer per 24 to 36 sub-pixel units is beneficial to further improve the uniformity of the exposure pitch.
  • a spacer may be provided for every 24, 27, 30, 33 or 36 sub-pixel units.
  • the spacer 13 may be any one of a cylindrical shape, a square column shape, a prism shape, and a spherical shape.
  • the spacer of the shape can have a large contact surface when contacting the mask, that is, the spacer has a correspondingly large supporting ratio to the mask, thereby facilitating the uniform curvature of the mask, that is, It is advantageous to ensure that the spacing between the mask and the color filter substrate is uniform.
  • an embodiment of the present invention further provides another mask 20 including an effective display area 21 and an invalid display area 22, and a spacer 23 having a uniform height is disposed in the invalid display area 22.
  • spacer 23 is equivalent to the spacer 13 and is also used to support the mask.
  • the material, manufacturing process, height, distribution mode, and the like which are suitable for the spacer 13 are also applicable to the spacer 23 as well.
  • Another embodiment of the present invention provides a mask in which a spacer of a uniform height is disposed in an invalid display area of the mask, and the mask is brought into contact with the color filter substrate by the spacer, so that during exposure processing Because the height of the spacers is uniform, the spacing between the entire mask and the color filter substrate is kept consistent, that is, a uniform exposure interval can be maintained, thereby
  • the exposure pattern obtained after exposing the mask has a uniform exposure pattern shape variable and a uniform exposure pattern size.
  • the spacer 23 may have a height of 100-300 ⁇ m.
  • the height of the spacer is the exposure interval when the mask is exposed, that is, the exposure interval of the mask may be 100-300 ⁇ m, for example, 100 ⁇ m, 110 ⁇ m, 120 ⁇ m, 130 ⁇ m, 140 ⁇ m, 150 ⁇ m, 200 ⁇ m, 250 ⁇ m or 300 ⁇ m.
  • the mask 10 has a smaller exposure pitch when exposed than the prior art proximity exposure, thereby having a smaller exposure pattern shape variable deviation and exposure pattern size deviation.
  • the height of the spacer 23 can theoretically be infinitely small, so that a smaller exposure pitch can be obtained.
  • the distribution of the continuous pattern of the spacers 23 is one spacer per 200,000 to 1 million sub-pixel units.
  • the two masks 10 and 20 provided by the embodiments of the present invention are respectively shown in FIG. 1 and FIG. 2, and the masks 10 and 20 are in contact with the color filter substrate through the highly uniform spacers 13 and 23, and the exposure is ensured.
  • the exposure interval is uniform so that the resulting image after exposure has a uniform exposure pattern shape variable and a uniform exposure pattern size.
  • the difference is that the spacers 13, 23 are respectively disposed in different regions of the mask, the spacers 13 are located in the opaque region 11 in the effective display area of the mask 10, and the spacers 23 are located on the mask 20 Invalid display area 22 is included. Therefore, the mask 10 is more suitable when the light-transmitting area of the effective display area is large, and the mask 20 is more suitable when the light-transmitting area is small.
  • the spacers 23 are disposed on the ineffective display region 22 of the mask 20, if the multilayer photolithography process is sequentially performed, the spacers are exposed to the same invalidity of the color filter substrate when each layer of the mask is exposed.
  • the display area thus not affecting the lithographic pattern that has been completed beforehand, and using the mask 10 provided by the present invention, since the spacer 13 is disposed in the effective display area, the spacer is exposed during the subsequent process mask exposure. Contact with the pre-ordered lithographic pattern will result in the formation of dark spots on the pre-processed lithographic pattern.
  • BM Black Matrix
  • R, G, B in the current color film substrate process
  • ITO/OC Over Coat
  • PS Post Spacer
  • the mask process 10 provided by the embodiment of the present invention is used in the pre-process BM, R, and G.
  • the effective display area of the mask 10 in the pre-process BM, R, and G includes a large light-transmissive area, and thus the opaque area 11 is spaced apart. Loose, the spacers are not too dense in the opaque area.
  • the contact area between the spacer and the color filter substrate can be formed without forming a pattern area in the previous process.
  • the subsequent process B, ITO/OC, PS uses another mask 20 provided by the embodiment of the present invention, and is separated.
  • the pad is disposed in the invalid display area, and the light-transmissive area of the effective display area in the subsequent process B, ITO/OC, and PS is very small, and the opaque area of the effective display area of the mask is already provided due to the pre-order process.
  • Very dense spacer so if the spacer is continuously placed in the opaque area, the extrusion of the spacer is apt to occur, causing contamination of the substrate and pixel damage, and the substrate has been formed by the pre-process.
  • Graphic area The spacer is disposed in the effective display area, which causes the spacer to contact with the formed pattern area under the exposure, resulting in a black spot on the formed pattern area below.
  • an embodiment of the present invention provides a mask exposure processing method, which uses the masks 10 and 20 provided by the embodiments of the present invention, and includes the following steps:
  • the reticle exposure processing method provided by the embodiment of the present invention uses the reticle provided by the embodiment of the present invention, and the reticle contacts the color filter substrate through the spacer with a uniform height during the exposure process, thereby using the reticle and the color filter substrate.
  • the height spacing between the two is consistent, that is, the exposure interval is consistent during exposure, so as to have a uniform exposure pattern shape variable and a uniform exposure pattern size; in addition, the mask is contacted with the color filter substrate through the spacer to avoid the mask.
  • the mask is pressed onto the photoresist as in the contact exposure process, thereby preventing the mask from being contaminated, and the mask is not placed on the substrate by means of vacuum adsorption, cylinder pressurization, etc., and thus the mask provided by the embodiment
  • the template exposure processing method is convenient and simple to operate.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optical Filters (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Liquid Crystal (AREA)

Abstract

一种掩模板（10、20），属于显示技术领域，能够将曝光间距保持一致，从而使曝光图形具有一致的曝光图形形变量和均一的曝光图形尺寸。该掩模板（10、20）包括两种类型：其一为包括不透光区域（11）和透光区域（12），且在所述不透光区域（11）内设有高度一致的隔垫物（13）；另一为包括有效显示区域（21）和无效显示区域（22），所述无效显示区域（22）内设有高度一致的隔垫物（23）。上述掩膜板（10、20）可用于彩膜基板制作工艺。

Description

掩模板 技术领域
本发明涉及显示技术领域，尤其涉及一种掩模板。
背景技术
在显示面板如液晶显示面板的制造过程中，一般都要经过多次掩模工艺以在彩膜基板上形成所需的图形。掩模工艺次数越多所需的制造成本越高，同时，掩模板曝光时还会带来如尺寸不均、图形形变等其他不良影响。
目前，现有技术常用的掩模板曝光工艺为接近式曝光和接触式曝光。接近式曝光与接触式曝光的区别在于曝光时掩模板与彩膜基板是分开的还是贴紧的。其中，接触式曝光的掩模板是压在光刻胶的彩膜基板上，由于掩模板与彩膜基板直接接触，使得掩模板易受污染，所以相比接触式曝光，接近式曝光更为常用。接近式曝光的掩模板位于彩膜基板上方一定范围，掩模板与彩膜基板是不接触的，但也正由于掩模板与彩膜基板是不接触的，使得掩模板与彩膜基板之间难以保证一致的间距，即曝光时的曝光间距不一致，从而导致曝光后的曝光图形形变量不一致、曝光图形尺寸不均一。因此，提供一种能够将曝光间距保持一致，以使曝光后的曝光图形能够具有一致的曝光图形形变量和均一的曝光图形尺寸的掩模板是本领域技术人员所要解决的重要课题。
发明内容
本发明提供了一种掩模板，能够将曝光间距保持一致，从而使曝光图形具有一致的曝光图形形变量和均一的曝光图形尺寸。
为达到上述目的，本发明采用如下技术方案：
本发明提供一种掩模板，包括不透光区域和透光区域，且在所述不透光区域内设有高度一致的隔垫物。
其中，所述隔垫物的高度为100-300μm。
所述隔垫物的边缘距离所述不透光区域的边缘3-10μm。
所述隔垫物位于所述不透光区域内的中心区域。
所述隔垫物为连续型分布或离散型分布。
所述隔垫物的连续型分布的分布密度为每24个至每36个亚像素单位一个隔垫物。
所述隔垫物的形状为圆柱形、方柱形、棱柱形和球形中的任意一种。
本发明还提供另一种掩模板，包括有效显示区域和无效显示区域，所述无效显示区域内设有高度一致的隔垫物。
其中，所述隔垫物的高度为100-300μm。
所述隔垫物的连续型分布的分布密度为每20万至100万个亚像素单位一个隔垫物。
相应地，本发明提供一种掩模板曝光处理方法，使用如本发明所述的掩模板，包括以下步骤：
1)将掩模板置于基板的上方，利用所述掩模板上设置的高度一致的所述隔垫物与所述基板相接触；
2)对所述掩模板进行曝光，以在所述基板上形成曝光图形。
本发明提供了一种掩模板，在该掩模板的不透光区域内设有高度一致的隔垫物，利用该隔垫物将掩模板与彩膜基板进行接触，这样在曝光处理时，由于隔垫物的高度一致，从而将整个掩模板与彩膜基板之间的间距保持一致，即能够保持一致的曝光间距，从而使得掩模板曝光后所得到的曝光图形具有一致的曝光图形形变量和均一的曝光图形尺寸。
附图说明
图1为本发明实施例提供的一种掩模板示意图；
图2为本发明实施例提供的另一种掩模板示意图；
图3为使用根据本发明实施例提供的一种掩模板的曝光处理方法示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普 通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
下面结合附图对本发明实施例进行详细描述。
如图1所示，本发明实施例提供一种掩模板10，包括不透光区域11和透光区域12，且在不透光区域11内设有高度一致的隔垫物13。
掩模板一般都包括有效显示区域和无效显示区域。有效显示区域为掩模板的图形区，对应基板上掩模板曝光处理后形成图形所在的区域，无效显示区域为有效显示区域的每一单元格之间间隔的区域，对应基板上掩模板曝光处理后形成图形所在的区域之间间隔的区域，是在后续中需要切割去除的区域。
有效显示区域一般又分为不透光区域和透光区域。不透光区域一般为不透光铬(Cr)层，用于在基板上形成与掩模板对应的图形。隔垫物用于支撑掩模板。现有技术中已知的隔垫物均可以应用到本发明中，本发明对其制作方法和材质均不作限定。例如，本发明实施例提供的掩模板可以通过现有技术常用的光刻胶工艺将高度一致的隔垫物设于掩模板的不透光区域内。
本发明实施例提供了一种掩模板，在该掩模板的不透光区域内设有高度一致的隔垫物，利用该隔垫物将掩模板与彩膜基板进行接触，这样在曝光处理时，由于隔垫物的高度一致，从而将整个掩模板与彩膜基板之间的间距保持一致，即能够保持一致的曝光间距，从而使得掩模板曝光时所得到的曝光图形具有一致的曝光图形形变量和均一的曝光图形尺寸。
在本发明的一实施例中，隔垫物13的高度可以为100-300μm。在本实施例中，将隔垫物13的高度设置在上述范围内，主要是因为，现有技术中，接近式曝光出于安全考虑，曝光间距必须在一定安全范围内以防止掩模板和基板碰撞而污染掩模板，曝光间距大，曝光时光线发生的偏转较大，从而会增加曝光图形形变量和曝光图形尺寸的偏差。由于该一定安全的范围通常是较大的，所以现有技术中接近式曝光通常具有较大的曝光图形形变量偏差和图形尺寸偏差。本发明实施例中，隔垫物的高度即为掩模板曝光时掩模板与彩膜基板之间的间距，也就是曝光时的曝光间距，即掩模板曝光时曝光间距可以为100-300μm，该距离要远远小于现有技术中“该一定安全的范围”。这样，相比现 有技术接近式曝光，掩模板10曝光时具有较小的曝光间距，从而具有较小的曝光图形形变量偏差和曝光图形尺寸偏差。具体地，隔垫物的高度可以是100μm、110μm、120μm、130μm、140μm、150μm、200μm、250μm或300μm。
隔垫物13的高度在理论上可以达到无限小，从而在理论上可以获得无限小的曝光图形形变量偏差和图形尺寸偏差。可以理解的是，随着工艺的开发，高度小于100μm的隔垫物也包括在本发明的构思范围内，例如80μm、70μm、60μm、50μm、40μm、30μm、20μm、10μm、5μm等。可以理解的是，将隔垫物13的高度设置的更小，可以对曝光图形尺寸偏差具有更严格的控制，特别适用于窄线宽产品。隔垫物13高度越小，曝光间距越小，曝光时光线偏转越小，从而可以将曝光图形尺寸控制在更小的范围内，这样，相邻不透光区域曝光时互相之间的交叉影响就是越小的。
在本发明一实施例中，隔垫物13的边缘可以距离不透光区域11的边缘3-10μm。隔垫物13设于掩模板10的不透光区域11内，且不超过不透光区域11，这样在曝光时可保证隔垫物13不会影响掩模板10图形的曝光效果。隔垫物的边缘距离不透光区域的边缘越小，表明隔垫物在不透光区域具有越大的接触面，也就是隔垫物对掩模板具有越大的支撑面。这样可以更好的避免掩模板具有不同的弯曲，从而使得掩模板通过隔垫物与彩膜基板接触时可以更好保证掩模板与彩膜基板整体具有一致的间距。但应注意的是，隔垫物的边缘距离不透光区域的边缘越小，在掩模板曝光时也容易发生隔垫物对掩模板图形的影响。将隔垫物13的边缘设置为距离不透光区域11的边缘3-10μm既有利于掩模板与彩膜基板之间具有一致的高度间距，具有一致的曝光间距，也有益于曝光时隔垫物不会影响掩模板的图形化效果。例如，隔垫物的边缘可以距离不透光区域4μm、5μm、6μm、7μm、8μm、9μm或10μm。
在本发明一实施例中，隔垫物13在不透光区域11内可以位于不透光区域11的中心区域。这样，可使隔垫物均匀支撑不透光区域内掩模板，保证整个掩模板平面的弯曲度是一致的，从而更有利于保证曝光间距是一致的。当然，隔垫物也可以位于不透光区域11内的非中心区域，在这种情况下，掩模板曝光时隔垫物也可以对掩模板起到支撑 作用，以确保掩模板具有一致的弯曲度。
在本发明另一实施例中，隔垫物13在不透光区域11内可以连续型分布或离散型分布。也就是，每个不透光区域内可以设有一个或多个隔垫物，也可以每两个或多个不透光区域内设有一个隔垫物。隔垫物在不透光区域内连续分布有利于隔垫物均匀支撑掩模板，从而有利于掩模板具有一致的弯曲度，进而有利于将曝光间距保持一致。
在本发明一优选实施例中，隔垫物13连续型分布的分布密度可以为每24个至每36个亚像素单位一个隔垫物，即，以亚像素单位为基准来说，每间隔24个至36个亚像素单位设有一个隔垫物。密度越大，即隔垫物设置的越多，对掩模板具有越大且均匀的支撑率，就越有利于保证掩模板与彩膜基板的间距是一致的，从而保证曝光间距是一致的，但密度大，相应地也提高了掩模板的制造成本，且过度密集的隔垫物之间会发生相互挤压，挤压造成隔垫物坍塌、变形等问题而影响而引起掩模板与彩膜基板之间的间距不一致。所以，每24个至每36个亚像素单位一个隔垫物，有益于进一步提高曝光间距的一致性。例如，可以每24个、27个、30个、33个或36个亚像素单位设一个隔垫物。
在本发明另一实施例中，隔垫物13可以为圆柱形、方柱形、棱柱形和球形中的任意一种。这种形状的隔垫物可以与掩模板在接触时具有较大的接触面，即隔垫物对掩模板具有相应较大的支撑率，从而有利于确保掩模板具有一致的弯曲度，即有利于确保掩模板与彩膜基板二者间的间距一致。
如图2所示，本发明实施例还提供另一种掩模板20，包括有效显示区域21和无效显示区域22，在无效显示区域22内设有高度一致的隔垫物23。
可以理解的是，隔垫物23与隔垫物13是等同的物质，同样用于支撑掩模板。适用于隔垫物13的材质、制作工艺、高度、分布方式等设置同样也适用于隔垫物23。
本发明实施例提供了另一种掩模板，在该掩模板的无效显示区域内设有高度一致的隔垫物，利用该隔垫物将掩模板与彩膜基板进行接触，这样在曝光处理时，由于隔垫物的高度一致，从而将整个掩模板与彩膜基板之间的间距保持一致，即能够保持一致的曝光间距，从而 使掩模板曝光后所得到的曝光图形具有一致的曝光图形形变量和均一的曝光图形尺寸。
在本发明一实施例中，隔垫物23的高度可以为100-300μm。隔垫物的高度就是掩模板曝光时的曝光间距，即掩模板曝光时曝光间距可以为100-300μm，例如，可以是100μm、110μm、120μm、130μm、140μm、150μm、200μm、250μm或300μm。这样，相比现有技术接近式曝光，掩模板10曝光时具有较小的曝光间距，从而具有较小的曝光图形形变量偏差和曝光图形尺寸偏差。与隔垫物13相同地，隔垫物23的高度在理论上也可以无限小，这样可以获得更小的曝光间距。
在本发明另一实施例中，隔垫物23的连续型分布的分布密度为每20万至100万个亚像素单位一个隔垫物。密度越小，隔垫物对掩模板具有越小的支撑率，因此，本发明实施例中，分布密度可以为每20万个、30万个、50万个、60万个、80万个或100万个亚像素单位一个隔垫物，这样，具有足够的隔垫物可以对掩模板提供充足的支撑率，从而有利于掩模板与基板之间的高度间距是一致的。
下面将结合图1和图2对本发明实施例所提供的两种掩模板10、20作具体说明。
本发明实施例提供的两种掩模板10、20，分别如图1和图2所示，掩模板10、20通过高度一致的隔垫物13、23与彩膜基板接触，都能保证在曝光时曝光间距是一致的，从而使曝光后所得图形具有一致的曝光图形形变量和均一的曝光图形尺寸。不同的是，隔垫物13、23分别设于掩模板的不同区域，隔垫物13位于掩模板10的有效显示区域内的不透光区域11内，而隔垫物23位于掩模板20的无效显示区域22内。因而，掩模板10更适用于有效显示区域的透光区域较大时的情况，掩模板20更适用于透光区域较小时的情况。
具体地，由于隔垫物23设于掩模板20的无效显示区域22，因而，若依次进行多层光刻工艺，每层工艺掩模板曝光时隔垫物接触的是彩膜基板的同样的无效显示区域，因而完全不影响前序已完成的光刻图形，而使用本发明提供的一种掩模板10，由于隔垫物13设于有效显示区域，因而进行后序工艺掩模板曝光时隔垫物会与前序已完成的光刻图形接触，会导致在前序已完成的光刻图形上形成黑斑。
例如，以目前彩膜基板工艺的BM(Black Matrix)、R、G、B、 ITO/OC(Over Coat)、PS(Post Spacer)流程为例进行详细说明。前序工艺BM、R、G使用本发明实施例提供的掩模板10，前序工艺BM、R、G中掩模板10的有效显示区域包括的透光区域较大，因而不透光区域11相距松散，隔垫物设于不透光区域不会过于密集，通过设置适宜密度分布的隔垫物可以在曝光时隔垫物与彩膜基板的接触区域可以不落在上一工艺已形成图形区，从而既可以获得一致的曝光图形形变量和曝光图形尺寸且不影响下一工艺的曝光效果；后序工艺B、ITO/OC、PS使用本发明实施例提供的另一种掩模板20，隔垫物设于无效显示区域，后序工艺B、ITO/OC、PS中其有效显示区域的透光区域非常小，且由于经过前序工艺，掩模板有效显示区域的不透光区域已设有非常密集的隔垫物，因而若继续将隔垫物设于不透光区域，易于发生隔垫物的挤压，造成对基板的污染和像素损伤，且基板上已具有前序工艺所形成的图形区，隔垫物设于有效显示区域会导致曝光时隔垫物与下方已形成图形区也有接触，造成下方已形成图形区具有黑斑。
相应地，如图3所示，本发明实施例提供一种掩模板曝光处理方法，使用本发明实施例所提供的掩模板10、20，包括以下步骤：
1)将掩模板置于基板的上方，利用所述掩模板上设置的高度一致的所述隔垫物与所述基板相接触；
2)对所述掩模板进行曝光，以在所述基板上形成曝光图形。
本发明实施例提供的掩模板曝光处理方法，使用本发明实施例所提供的掩模板，在曝光处理时掩模板通过高度一致的隔垫物与彩膜基板接触，从而将掩模板与彩膜基板之间的高度间距保持一致，即曝光时保持一致的曝光间距，从而具有一致的曝光图形形变量、均一的曝光图形尺寸；此外，掩模板通过隔垫物与彩膜基板接触避免了掩模板要像接触式曝光工艺那样将掩模板压在光刻胶上，从而避免掩模板被污染，也无需借助真空吸附、气缸加压等方式以将掩模板置于基板上方，因而本实施例提供的掩模板曝光处理方法操作方便、简单。
显然，上述实施例仅仅是为清楚地说明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明创造的保护范围。

Claims (11)

  1. 一种掩模板，包括不透光区域和透光区域，其特征在于，在所述不透光区域内设有高度一致的隔垫物。
  2. 根据权利要求1所述的掩模板，其特征在于，所述隔垫物的高度为100-300μm。
  3. 根据权利要求1所述的掩模板，其特征在于，所述隔垫物的边缘距离所述不透光区域的边缘3-10μm。
  4. 根据权利要求1所述的掩模板，其特征在于，所述隔垫物位于所述不透光区域内的中心区域。
  5. 根据权利要求1所述的掩模板，其特征在于，所述隔垫物为连续型分布或离散型分布。
  6. 根据权利要求5所述的掩模板，其特征在于，所述隔垫物的连续型分布的分布密度为每24个至每36个亚像素单位一个隔垫物。
  7. 根据权利要求1所述的掩模板，其特征在于，所述隔垫物的形状为圆柱形、方柱形、棱柱形和球形中的任意一种。
  8. 一种掩模板，包括有效显示区域和无效显示区域，其特征在于，所述无效显示区域内设有高度一致的隔垫物。
  9. 根据权利要求8所述的掩模板，其特征在于，所述隔垫物的高度为100-300μm。
  10. 根据权利要求8所述的掩模板，其特征在于，所述隔垫物的连续型分布的分布密度为每20万至100万个亚像素单位一个隔垫物。
  11. 一种掩模板曝光处理方法，其特征在于，使用如权利要求1或8所述的掩模板，包括以下步骤：
    1)将掩模板置于基板的上方，利用所述掩模板上设置的高度一致的所述隔垫物与所述基板相接触；
    2)对所述掩模板进行曝光，以在所述基板上形成曝光图形。
PCT/CN2015/073939 2014-11-11 2015-03-10 掩模板 Ceased WO2016074387A1 (zh)

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CN104360579A (zh) 2014-11-11 2015-02-18 京东方科技集团股份有限公司 掩模板
CN107689421B (zh) * 2017-03-21 2020-01-24 广东聚华印刷显示技术有限公司 像素界定层及其制备方法和应用
CN109212908B (zh) * 2017-06-29 2021-02-05 上海仪电显示材料有限公司 曝光机的挡板位置确定方法
CN109462009B (zh) * 2018-11-08 2021-01-26 京东方科技集团股份有限公司 液晶天线基板及其制作方法和液晶天线及其制作方法

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JPH0829965A (ja) * 1994-07-12 1996-02-02 Toppan Printing Co Ltd ステンシル露光マスク
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JPH0829965A (ja) * 1994-07-12 1996-02-02 Toppan Printing Co Ltd ステンシル露光マスク
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CN204178120U (zh) * 2014-11-11 2015-02-25 京东方科技集团股份有限公司 掩模板

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