WO2016071576A1 - Surface micromechanical pressure sensor and method for manufacturing the same - Google Patents
Surface micromechanical pressure sensor and method for manufacturing the same Download PDFInfo
- Publication number
- WO2016071576A1 WO2016071576A1 PCT/FI2015/050775 FI2015050775W WO2016071576A1 WO 2016071576 A1 WO2016071576 A1 WO 2016071576A1 FI 2015050775 W FI2015050775 W FI 2015050775W WO 2016071576 A1 WO2016071576 A1 WO 2016071576A1
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- WIPO (PCT)
- Prior art keywords
- bottom electrode
- pressure
- cavity
- substrate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
Definitions
- the invention relates to a capacitive pressure sensor according to the preamble of claim 1 and a method for manufacturing the same.
- micromechanical pressure sensors are categorized in two classes according to their manufacturing method.
- a pressure sensor is categorized as a surface micromechanical sensor if it is manufactured using surface micromechanical techniques, while the term bulk micromechanical device is used if the fabrication of the sensor is based on the older bulk micromechanical technique.
- pressure sensors are also categorized in two classes depending on whether the sensor is responsive to a differential pressure or an absolute pressure.
- a typical pressure sensor comprises a top electrode, bottom electrode and a cavity between them. The pressure is detected in the change of capacitance between the top and bottom electrodes caused by bending of at least one of the electrodes.
- inaccuracies and mounting problems with encapsulated surface micromachined sensors are mechanical forces caused by mounting or external temperature changes.
- the present patent application discloses a novel construction for a surface micromechanical pressure sensor and a method for manufacturing the same.
- the invention is based on creating a floating bottom electrode for eliminating the mechanical stresses inside the MEMS chip and between the joint of the chip and PCB-board.
- the back electrode is used as a second sensing electrode.
- the sensor chip is formed as an elongated structure such that the actual sensing end of this structure is not attached to the frame of the sensor.
- the pressure sensor according to the invention is characterized by what is stated in the characterizing part of claim 1.
- the invention offers significant benefits.
- the invention makes it possible decrease mechanical stresses both inside the sensor structure and between the sensor structure and the frame to which the sensor structure is mounted, e.g. PCB -board.
- PCB PCB-board
- Fig. 1 shows a typical design of a conventional surface micromechanical MEMS pressure sensor element as a cross section.
- Fig. 2 shows a cross section of a conventional surface micromechanical MEMS pressure sensor element.
- Fig. 3 shows cross section of a pressure sensor element with floating back electrode in accordance with the invention.
- Fig. 4 shows cross section of the back-opened pressure sensor element with bending back electrode in accordance with the invention.
- Fig. 6 shows a sensor structure layout for on PCB using stress eliminating acpect ration in accordance with the invention.
- Bottom insulator e.g. Silicon oxide
- Bottom electrode e.g. Polysilicon or metal
- Sacrificial oxide e.g. Silicon oxide
- Top contact pad (e.g. aluminum)
- External pressure e.g. air pressure
- the invention relates to methods for compensating the temperature dependences and enhancing sensitivity and installing of pressure sensors made with MEMS technology.
- the main sources for inaccuracies and mounting problems with encapsulated surface micromachined sensors are mechanical forces caused by mounting or external temperature changes.
- the pressure sensor element 33 comprises a top electrode 6, bottom electrode 3 and a cavity 5 between them and the pressure is detected in the change of capacitance between the top 6 and bottom electrodes 3 caused by bending of at least one of the electrodes.
- the chip size is typically 0.5 mm 2 - 4.0 mm 2
- the thickness of the sensor chip is defined by the silicon substrate, which could be thinned down to less than 100 ⁇ .
- the thickness of the active sensor structure is less than 5 ⁇ .
- the pressure sensor structure 12 is constructed of an array of surface micromechanical, capacitive pressure sensor elements 33
- each element 33 is about 10 - 500 ⁇ depending on the top membrane material, the mechanical stress of the top membrane, the size of the sensor gap and the measured pressure range.
- the sensor may include an internal oxide reference capacitor for temperature compensation.
- One aspect of the invention in accordance with figure 3 relates to releasing the bottom electrode 3 during the etching phase of the sensor cavity 5 e.g. in accordance with the method described in EP01982512.
- both the top 6 and bottom electrodes 3 will be of a porous polycrystalline silicon layer or functionally equivalent material, whereby a second cavity 11 may be formed between the bottom electrode and the substrate 1, in figure 3 below the bottom electrode 3. Therefore the bottom electrode 3 will be encapsulated within or on the border of the cavity 5 but suspended from its edges to the supporting structure 4. Thereby the bottom electrode 3 will not be affected by the external, measureable pressure, and hence it is being inactive to the pressure measurement.
- the bottom electrode 3 is enclosed in the same pressure as the first cavity 5 by forming a second cavity 11 between the bottom electrode 3 and the substrate 1.
- the mechanically released floating bottom electrode 3 is independent from the temperature stresses caused by different temperature coefficients in different layers and stresses caused by mounting, therefore the bottom electrode 3 is also inactive to the pressure to be measured, whereby the pressure measurement is performed by the top electrode 6 only as designed.
- one additional measure is to open the silicon frame 1 from the backside by deep etching.
- the bottom electrode 3 of the sensor structure 12 will be released until the bottom electrode 3 in order to form a pressure port 34 for the bottom electrode 3.
- the bottom electrode 3 will bend under the influence of the external pressure 10, whereby also the bottom electrode 3 acts as a sensing element. So,the bottom electrode 3 is opened to the same pressure as the top electrode 6 by forming a pressure port 34 from the bottom electrode 3 to the ambient space.
- a fourth embodiment of the invention includes modifying the aspect ratio (length/width) of the silicon sensor in order to compensate for the mounting stresses.
- the part sensitive of the pressure of the sensor structure 12 is positioned in one end S of the sensor chip 26 and electric contacts 27 to the second end.
- the passive silicon frame 28 between the first S and second end M is thinned by deep etching as narrow as possible such that the aspect ratio between the width 24 of the passive silicon frame 28 and the width 25 of the sensor S (24/25) is small .
- the effectiveness of the thinned passive silicon frame depends on the aspect ratio which should generally be smaller than 1 :5.
- the electric conductors between the sensing element S and contacts 27 are positioned on the surface of this passive silicon part 28.
- the sensor chip 26 with this layout is attached to a frame from the second end M whereby the part S sensitive the pressure is in the other, first end S.
- the elongated, thinned part 28 between the ends eliminates the stresses caused by mounting in the sensing part S of the structure 26.
- top electrode (6) electrically isolated and spaced apart by a first cavity (5) from said bottom electrode (3), the top electrode (6) is deformable under the pressure (10) to be measured
- Paragraph 2 The sensor structure (12) of Paragraph 1, characterized in that the bottom electrode (3) is concealed in the same pressure as the first cavity (5) by forming a second cavity (11) between the bottom electrode (3) and the substrate (1).
- Paragraph 3 The sensor structure (12) of Paragraph 1, characterized in that the bottom electrode (3) is opened to the same pressure as the top electrode (6) by forming a pressure port (34) from the bottom electrode (3) to the ambient space.
- Paragraph 7 A method for forming a capacitive surface micro mechanical pressure sensor structure (12) including at least one sensor element (33), in which method includes the following steps: forming a bottom electrode (3) on a substrate (1) such that it is in a mechanical connection with the substrate (1), and
- top electrode (3) electrically isolated and spaced apart by a cavity (6) from said bottom electrode (3), which top electrode (6) is deformable under the pressure (10) to be measured, characterized in that releasing the bottom electrode (3) from the substrate (1), advantageously at least essentially in the vicinity of the cavity (5).
- Paragraph 8 The method of Paragraph 7, characterized by concealing the bottom electrode (3) in the same pressure as the first cavity (5) by forming a second cavity (11) between the bottom electrode (3) and the substrate (1) by forming the bottom electrode (3) of porous polycrystalline silicon and using this porous material (3) for etching the second cavity (11).
- Paragraph 9 The method of Paragraph 7, characterized by opening that the bottom electrode (3) the same pressure as the top electrode (6) (fig. 4) outside the cavity (5) by forming a pressure port (34) from the bottom electrode (3) to the ambient space.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
The present publication discloses a capacitive surface micromechanical pressure sensor structure (12) including at least one sensor element (33), each sensor element (33) comprising a substrate (1), a bottom electrode (3) in a mechanical connection with the substrate (1), and at least one top electrode (6) electrically isolated and spaced apart by a first cavity (5) from said bottom electrode (3), the top electrode (6) is deformable under the pressure (10) to be measured. In accordance with the invention the bottom electrode (3) is released (11, 34) from the substrate (1) at least essentially in the vicinity of the cavity (5).
Description
Surface micromechanical pressure sensor and method for manufacturing the same
The invention relates to a capacitive pressure sensor according to the preamble of claim 1 and a method for manufacturing the same.
Traditionally, micromechanical pressure sensors are categorized in two classes according to their manufacturing method. A pressure sensor is categorized as a surface micromechanical sensor if it is manufactured using surface micromechanical techniques, while the term bulk micromechanical device is used if the fabrication of the sensor is based on the older bulk micromechanical technique.
On the basis of their constructional differences, pressure sensors are also categorized in two classes depending on whether the sensor is responsive to a differential pressure or an absolute pressure.
Prior-art sensor structures are described, e.g., in publication EPO 1982512, where a method for using a porous polycrystalline silicon layer as a portion of the flexible diaphragm of the sensor structure is used. Basically a typical pressure sensor comprises a top electrode, bottom electrode and a cavity between them. The pressure is detected in the change of capacitance between the top and bottom electrodes caused by bending of at least one of the electrodes.
In the prior art there are however some drawbacks. The main sources for
inaccuracies and mounting problems with encapsulated surface micromachined sensors are mechanical forces caused by mounting or external temperature changes.
The present patent application discloses a novel construction for a surface micromechanical pressure sensor and a method for manufacturing the same. The invention is based on creating a floating bottom electrode for eliminating the mechanical stresses inside the MEMS chip and between the joint of the chip and
PCB-board. In one preferred embodiment the back electrode is used as a second sensing electrode.
In another embodiment of the invention the sensor chip is formed as an elongated structure such that the actual sensing end of this structure is not attached to the frame of the sensor.
More specifically, the pressure sensor according to the invention is characterized by what is stated in the characterizing part of claim 1.
Furthermore, the method according to the invention is characterized by what is stated in the characterizing part of claim 4.
The invention offers significant benefits.
The invention makes it possible decrease mechanical stresses both inside the sensor structure and between the sensor structure and the frame to which the sensor structure is mounted, e.g. PCB -board. In the following, the invention will be examined in greater detail with the help of exemplifying embodiments illustrated in the appended drawings in which
Fig. 1 shows a typical design of a conventional surface micromechanical MEMS pressure sensor element as a cross section.
Fig. 2 shows a cross section of a conventional surface micromechanical MEMS pressure sensor element.
Fig. 3 shows cross section of a pressure sensor element with floating back electrode in accordance with the invention.
Fig. 4 shows cross section of the back-opened pressure sensor element with bending
back electrode in accordance with the invention.
Fig. 6 shows a sensor structure layout for on PCB using stress eliminating acpect ration in accordance with the invention.
Term list:
1 Si substrate
2 Bottom insulator (e.g. Silicon oxide)
3 Bottom electrode (e.g. Polysilicon or metal)
4 Sacrificial oxide (e.g. Silicon oxide)
5 first cavity, vacuum cavity
6 Bending upper electrode (or op electrode, e.g. Poly-Si, S13N4, ALD thin film or combination)
7 Top contact pad (e.g. aluminum)
8 Bottom contact pad (e.g. aluminum)
9 Forces from thermal mitsmatch of the sensor mounting
10 External pressure, e.g. air pressure
11 Second cavity
12 Sensor structure
23 Length of the sensor chip
22 Length of the passive silicon part of the sensor chip
26 Sensor chip
27 Electrical contacts of the sensor chip
28 Passive silicon part of the sensor chip
33 Sensor element
34 pressure port
S First end of the sensor chip
M Second end of the sensor chip
The invention relates to methods for compensating the temperature dependences and
enhancing sensitivity and installing of pressure sensors made with MEMS technology. The main sources for inaccuracies and mounting problems with encapsulated surface micromachined sensors are mechanical forces caused by mounting or external temperature changes.
Typically the pressure sensor element 33 comprises a top electrode 6, bottom electrode 3 and a cavity 5 between them and the pressure is detected in the change of capacitance between the top 6 and bottom electrodes 3 caused by bending of at least one of the electrodes.
With reference to figures 1 and 2 the typical dimensions suitable for the invention are the following:
- The chip size is typically 0.5 mm2 - 4.0 mm2
- The thickness of the sensor chip is defined by the silicon substrate, which could be thinned down to less than 100 μιη. The thickness of the active sensor structure is less than 5 μιη.
- The pressure sensor structure 12 is constructed of an array of surface micromechanical, capacitive pressure sensor elements 33
- The diameter of each element 33 is about 10 - 500 μιη depending on the top membrane material, the mechanical stress of the top membrane, the size of the sensor gap and the measured pressure range.
- the sensor may include an internal oxide reference capacitor for temperature compensation.
One aspect of the invention in accordance with figure 3 relates to releasing the bottom electrode 3 during the etching phase of the sensor cavity 5 e.g. in accordance with the method described in EP01982512. With this method both the top 6 and bottom electrodes 3 will be of a porous polycrystalline silicon layer or functionally equivalent material, whereby a second cavity 11 may be formed between the bottom electrode and the substrate 1, in figure 3 below the bottom electrode 3. Therefore the bottom electrode 3 will be encapsulated within or on the border of the cavity 5 but suspended from its edges to the supporting structure 4. Thereby the bottom electrode
3 will not be affected by the external, measureable pressure, and hence it is being inactive to the pressure measurement. In other words the bottom electrode 3 is enclosed in the same pressure as the first cavity 5 by forming a second cavity 11 between the bottom electrode 3 and the substrate 1. As well the mechanically released floating bottom electrode 3 is independent from the temperature stresses caused by different temperature coefficients in different layers and stresses caused by mounting, therefore the bottom electrode 3 is also inactive to the pressure to be measured, whereby the pressure measurement is performed by the top electrode 6 only as designed.
In accordance with the second embodiment of figure 4 of the invention one additional measure is to open the silicon frame 1 from the backside by deep etching. With this measure the bottom electrode 3 of the sensor structure 12 will be released until the bottom electrode 3 in order to form a pressure port 34 for the bottom electrode 3. Then, also the bottom electrode 3 will bend under the influence of the external pressure 10, whereby also the bottom electrode 3 acts as a sensing element. So,the bottom electrode 3 is opened to the same pressure as the top electrode 6 by forming a pressure port 34 from the bottom electrode 3 to the ambient space.
By designing the top 6 and bottom 3 electrodes symmetrical, either an absolute or a differential pressure sensor structure is obtained including two elements bending towards each other in the first cavity 5, depending on the pressure difference over the sensor chip and the mounting of the device. By this way the sensitivity of the pressure sensor structure 12 may be doubled in the pressure range it is designed for, when they are affected by the same external pressure 10. Releasing the bottom electrode 3 works also in the method described below for compensating for the mechanical stresses of the sensor structure. In the embodiment of figure 4 the material of the bottom electrode 3 has no special requirements, because the etching is made through the substrate 1. In accordance with figure 6 a fourth embodiment of the invention includes modifying the aspect ratio (length/width) of the silicon sensor in order to compensate for the mounting stresses. The part sensitive of the pressure of the sensor structure 12 is
positioned in one end S of the sensor chip 26 and electric contacts 27 to the second end. The passive silicon frame 28 between the first S and second end M is thinned by deep etching as narrow as possible such that the aspect ratio between the width 24 of the passive silicon frame 28 and the width 25 of the sensor S (24/25) is small . The effectiveness of the thinned passive silicon frame depends on the aspect ratio which should generally be smaller than 1 :5. The electric conductors between the sensing element S and contacts 27 are positioned on the surface of this passive silicon part 28. The sensor chip 26 with this layout is attached to a frame from the second end M whereby the part S sensitive the pressure is in the other, first end S. The elongated, thinned part 28 between the ends eliminates the stresses caused by mounting in the sensing part S of the structure 26.
As a summary the invention includes the following basic concepts:
The new innovations introduced here are
1. Floating bottom electrode 3 of a surface MEMS pressure sensor structure 12, eliminating the mechanical stress
a) inside the MEMS -chip (Figures 3 and 4) and
2. Bendable bottom electrode 3, either (Fig. 3) eliminating the mechanical stresses mentioned above or (Fig. 4) doubling the sensitivity of the sensor structure 12
3. Stick construction (Fig. 6) of the pressure sensor, eliminating the mismatches mentioned above 3.
The following paragraphs describe further embodiments of the invention:
Paragraph 1. A capacitive surface micro mechanical pressure sensor structure (12) including at least one sensor element (33), each sensor element (33) comprising a substrate (1),
- a bottom electrode (3) in a mechanical connection with the substrate (1), and
- at least one top electrode (6) electrically isolated and spaced apart by a first
cavity (5) from said bottom electrode (3), the top electrode (6) is deformable under the pressure (10) to be measured,
characterized by
- the bottom electrode (3) is released (11, 34) from the substrate (1),
advantageously at least essentially in the vicinity of the cavity (5).
Paragraph 2. The sensor structure (12) of Paragraph 1, characterized in that the bottom electrode (3) is concealed in the same pressure as the first cavity (5) by forming a second cavity (11) between the bottom electrode (3) and the substrate (1).
Paragraph 3. The sensor structure (12) of Paragraph 1, characterized in that the bottom electrode (3) is opened to the same pressure as the top electrode (6) by forming a pressure port (34) from the bottom electrode (3) to the ambient space.
Paragraph 7. A method for forming a capacitive surface micro mechanical pressure sensor structure (12) including at least one sensor element (33), in which method includes the following steps: forming a bottom electrode (3) on a substrate (1) such that it is in a mechanical connection with the substrate (1), and
forming on this structure at least one top electrode (6) electrically isolated and spaced apart by a cavity (6) from said bottom electrode (3), which top electrode (6) is deformable under the pressure (10) to be measured, characterized in that releasing the bottom electrode (3) from the substrate (1), advantageously at least essentially in the vicinity of the cavity (5).
Paragraph 8. The method of Paragraph 7, characterized by concealing the bottom electrode (3) in the same pressure as the first cavity (5) by forming a second cavity
(11) between the bottom electrode (3) and the substrate (1) by forming the bottom electrode (3) of porous polycrystalline silicon and using this porous material (3) for etching the second cavity (11). Paragraph 9. The method of Paragraph 7, characterized by opening that the bottom electrode (3) the same pressure as the top electrode (6) (fig. 4) outside the cavity (5) by forming a pressure port (34) from the bottom electrode (3) to the ambient space.
Claims
1. A capacitive surface micro mechanical pressure sensor structure (12) including at least one sensor element (33), each sensor element (33) comprising
a substrate (1),
- a bottom electrode (3) in a mechanical connection with the substrate (1), and
- at least one top electrode (6) electrically isolated and spaced apart by a first cavity (5) from said bottom electrode (3), the top electrode (6) is deformable under the pressure (10) to be measured,
characterized by
- the bottom electrode (3) is released (11, 34) from the substrate (1).
2. The sensor structure (12) of claim 1, characterized in that the bottom electrode (3) is enclosed in the same pressure as the first cavity (5) by forming a second cavity (11) between the bottom electrode (3) and the substrate (1).
3. The sensor structure (12) of claim 1, characterized in that the bottom electrode (3) is opened to the same pressure as the top electrode (6) by forming a pressure port (34) from the bottom electrode (3) to the ambient space.
4. A method for forming a capacitive surface micromechanical pressure sensor structure (12) including at least one sensor element (33), in which method includes the following steps: forming a bottom electrode (3) on a substrate (1) such that it is in a mechanical connection with the substrate (1), and
forming on this structure at least one top electrode (6) electrically isolated and spaced apart by a cavity (6) from said bottom electrode (3), which top electrode (6) is deformable under the pressure (10) to be
measured, characterized in that - releasing the bottom electrode (3) from the substrate (1).
5. The method of claim 4, characterized by concealing the bottom electrode (3) in the same pressure as the first cavity (5) by forming a second cavity (11) between the bottom electrode (3) and the substrate (1) by forming the bottom electrode (3) of porous polycrystalline silicon and using this porous material (3) for etching the second cavity (11).
6. The method of claim 4, characterized by opening that the bottom electrode (3) the same pressure as the top electrode (6) (fig. 4) outside the cavity (5) by forming a pressure port (34) from the bottom electrode (3) to the ambient space.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20145977 | 2014-11-07 | ||
| FI20145977 | 2014-11-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2016071576A1 true WO2016071576A1 (en) | 2016-05-12 |
Family
ID=54705199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/FI2015/050775 Ceased WO2016071576A1 (en) | 2014-11-07 | 2015-11-09 | Surface micromechanical pressure sensor and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2016071576A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106813811A (en) * | 2017-01-20 | 2017-06-09 | 南京大学 | A kind of high sensitivity capacitor type pliable pressure sensor |
| CN113790833A (en) * | 2021-09-16 | 2021-12-14 | 武汉敏声新技术有限公司 | a pressure sensor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4111119A1 (en) * | 1991-04-03 | 1992-10-08 | Univ Chemnitz Tech | Stackable micro-mechanical capacitative pressure measuring cell - has distance limiters on electrode cover or diaphragm and temp. dependent resistance path on electrode cover |
| DE4441903C1 (en) * | 1994-11-24 | 1996-03-21 | Siemens Ag | Micromechanical capacitive pressure sensor |
| WO2004063089A2 (en) * | 2003-01-13 | 2004-07-29 | Indian Institute Of Technology - Delhi (Iit) | Recessed microstructure device and fabrication method thereof |
| EP1982512A1 (en) | 2006-02-10 | 2008-10-22 | Eastman Kodak Company | Self-calibrating printer and printer calibration method |
| DE102009000056A1 (en) * | 2009-01-07 | 2010-07-08 | Robert Bosch Gmbh | Sensor element for capacitive differential pressure detection |
| US20130233086A1 (en) * | 2012-03-08 | 2013-09-12 | Nxp B. V. | Mems capacitive pressure sensor |
-
2015
- 2015-11-09 WO PCT/FI2015/050775 patent/WO2016071576A1/en not_active Ceased
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4111119A1 (en) * | 1991-04-03 | 1992-10-08 | Univ Chemnitz Tech | Stackable micro-mechanical capacitative pressure measuring cell - has distance limiters on electrode cover or diaphragm and temp. dependent resistance path on electrode cover |
| DE4441903C1 (en) * | 1994-11-24 | 1996-03-21 | Siemens Ag | Micromechanical capacitive pressure sensor |
| WO2004063089A2 (en) * | 2003-01-13 | 2004-07-29 | Indian Institute Of Technology - Delhi (Iit) | Recessed microstructure device and fabrication method thereof |
| EP1982512A1 (en) | 2006-02-10 | 2008-10-22 | Eastman Kodak Company | Self-calibrating printer and printer calibration method |
| DE102009000056A1 (en) * | 2009-01-07 | 2010-07-08 | Robert Bosch Gmbh | Sensor element for capacitive differential pressure detection |
| US20130233086A1 (en) * | 2012-03-08 | 2013-09-12 | Nxp B. V. | Mems capacitive pressure sensor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106813811A (en) * | 2017-01-20 | 2017-06-09 | 南京大学 | A kind of high sensitivity capacitor type pliable pressure sensor |
| CN106813811B (en) * | 2017-01-20 | 2019-04-05 | 南京大学 | A high-sensitivity capacitive flexible pressure sensor |
| CN113790833A (en) * | 2021-09-16 | 2021-12-14 | 武汉敏声新技术有限公司 | a pressure sensor |
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