[go: up one dir, main page]

WO2016068315A1 - Composition permettant la formation d'une couche de diffusion du type n, procédé de fabrication de couche de diffusion du type n et procédé de fabrication d'élément de cellule solaire - Google Patents

Composition permettant la formation d'une couche de diffusion du type n, procédé de fabrication de couche de diffusion du type n et procédé de fabrication d'élément de cellule solaire Download PDF

Info

Publication number
WO2016068315A1
WO2016068315A1 PCT/JP2015/080806 JP2015080806W WO2016068315A1 WO 2016068315 A1 WO2016068315 A1 WO 2016068315A1 JP 2015080806 W JP2015080806 W JP 2015080806W WO 2016068315 A1 WO2016068315 A1 WO 2016068315A1
Authority
WO
WIPO (PCT)
Prior art keywords
diffusion layer
type diffusion
forming composition
layer forming
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2015/080806
Other languages
English (en)
Japanese (ja)
Inventor
鉄也 佐藤
野尻　剛
倉田　靖
芦沢　寅之助
岩室　光則
明博 織田
麻理 清水
佐藤　英一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to CN201580056781.9A priority Critical patent/CN107148662A/zh
Priority to JP2016556674A priority patent/JPWO2016068315A1/ja
Publication of WO2016068315A1 publication Critical patent/WO2016068315A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10P32/14—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to an n-type diffusion layer forming composition, a method for producing an n-type diffusion layer, and a method for producing a solar cell element.
  • a manufacturing process of a conventional silicon solar cell element using, for example, a p-type silicon substrate as the semiconductor substrate will be described.
  • a p-type silicon substrate having a texture structure formed on the light receiving surface is prepared so as to promote the light confinement effect and increase the efficiency.
  • This p-type silicon substrate is uniformly n-type by performing several tens of minutes at 800 ° C. to 900 ° C. in a mixed gas atmosphere of phosphorus oxychloride (POCl 3 ) which is a donor element-containing compound, nitrogen and oxygen.
  • a diffusion layer is formed.
  • n-type diffusion layers are formed not only on the surface of the p-type silicon substrate, but also on the side and back surfaces. Therefore, a side etching process for removing the side n-type diffusion layer is necessary. Further, the n-type diffusion layer on the back surface needs to be converted into a p + -type diffusion layer. An aluminum paste is applied on the n-type diffusion layer on the back surface, and the p + -type diffusion is performed from the n-type diffusion layer by the diffusion of aluminum. Was converted into a layer.
  • a donor element or a compound containing the donor element is scattered from a solution or paste as a diffusion source.
  • phosphorus may also diffuse into the side surface and the back surface of the p-type silicon substrate.
  • an n-type diffusion layer may be formed in addition to the applied part.
  • the vapor phase reaction method using phosphorus oxychloride is applicable only to one side (usually the light-receiving surface or the surface) of the p-type silicon substrate which originally requires the n-type diffusion layer.
  • an n-type diffusion layer is also formed on the other surface (non-light-receiving surface or back surface) and side surface.
  • an n-type diffusion layer is formed on the surface other than the surface of the p-type silicon substrate as in the gas phase reaction method. End up.
  • the p-type silicon substrate in order for the p-type silicon substrate to have a pn junction structure as a solar cell element, it is necessary to perform etching on the side surface and convert the n-type diffusion layer to the p + -type diffusion layer on the back surface.
  • an aluminum paste which is an element belonging to Group 13 is applied to the back surface of a p-type silicon substrate and baked to convert the n-type diffusion layer into a p + -type diffusion layer.
  • the compound containing the donor element in a method of forming a n-type diffusion layer by applying a conventionally known paste containing a donor element such as phosphorus to a p-type silicon substrate as a diffusion source, the compound containing the donor element is volatilized and gasified to form a donor element. Since the donor element is diffused in a region other than the region where the diffusion is required, it is difficult to selectively form a diffusion layer in a specific region.
  • a coating agent containing a phosphorus compound when used, there may be uneven concentration of diffused phosphorus on the micro scale in the plane of the n-type diffusion layer.
  • the coating amount of a coating agent containing a phosphorus compound when the coating amount of a coating agent containing a phosphorus compound is reduced, in the drying step of the coating agent containing a phosphorus compound, the solvent rapidly evaporates from the end of the coating region, and the cross-section of the coating region becomes concave. (Coffee ring phenomenon) may occur. Therefore, in the central part of the coating region, when the phosphorus compound abundance ratio is reduced and diffusion occurs in a state where the phosphorus compound abundance ratio is reduced, the phosphorus concentration differs on a microscale in the surface direction or thickness direction of the p-type silicon substrate. A non-uniform n-type diffusion layer may be formed. The presence of a non-uniform n-type diffusion layer leads to a decrease in conversion efficiency of the entire solar cell.
  • the present invention has been made in view of the above-described conventional problems, and is applicable to a solar cell element using a semiconductor substrate, and can be applied to a specific region without forming an n-type diffusion layer in an unnecessary region. It is an object of the present invention to provide an n-type diffusion layer forming composition capable of forming a uniform n-type diffusion layer, an n-type diffusion layer manufacturing method using the same, and a solar cell element manufacturing method.
  • An n-type diffusion layer forming composition comprising a glass powder containing a donor element and having a particle diameter d90 of 0.1 ⁇ m to 1.5 ⁇ m and a dispersion medium.
  • n-type diffusion layer forming composition according to ⁇ 1> wherein the glass powder has an average particle diameter d50 of 0.05 ⁇ m to 0.5 ⁇ m.
  • n-type diffusion layer forming composition according to ⁇ 1> or ⁇ 2> wherein the donor element is at least one selected from P (phosphorus) and Sb (antimony).
  • the glass powder includes at least one donor element-containing material selected from the group consisting of P 2 O 3 , P 2 O 5 and Sb 2 O 3 , SiO 2 , K 2 O, Na 2 O, Containing at least one glass component material selected from the group consisting of Li 2 O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, SnO, ZrO 2, and MoO 3.
  • the n-type diffusion layer forming composition according to any one of ⁇ 3>.
  • ⁇ 5> a step of applying the n-type diffusion layer forming composition according to any one of ⁇ 1> to ⁇ 4> on a semiconductor substrate; Applying a thermal diffusion treatment to the semiconductor substrate after the application of the n-type diffusion layer forming composition; The manufacturing method of the n type diffused layer which has this.
  • ⁇ 6> a step of applying the n-type diffusion layer forming composition according to any one of ⁇ 1> to ⁇ 4> on a semiconductor substrate; Applying a thermal diffusion treatment to the semiconductor substrate after application of the n-type diffusion layer forming composition to form an n-type diffusion layer on the semiconductor substrate after application of the n-type diffusion layer formation composition; Forming an electrode on the formed n-type diffusion layer; The manufacturing method of the solar cell element which has this.
  • the present invention can be applied to a solar cell element using a semiconductor substrate and can form a uniform n-type diffusion layer in a specific region without forming an n-type diffusion layer in an unnecessary region. It is possible to provide a diffusion layer forming composition, a method for producing an n-type diffusion layer using the composition, and a method for producing a solar cell element.
  • n-type diffusion layer forming composition of the present invention First, an embodiment of the n-type diffusion layer forming composition of the present invention will be described, and then an embodiment of an n-type diffusion layer manufacturing method and a solar cell element manufacturing method using the n-type diffusion layer forming composition will be described.
  • the term “process” is not limited to an independent process, and even if it cannot be clearly distinguished from other processes, the term “process” is used as long as the intended purpose of the process is achieved. included.
  • “ ⁇ ” indicates a range including the numerical values described before and after the values as the minimum value and the maximum value, respectively.
  • the amount of each component in the composition is the total amount of the plurality of substances present in the composition unless there is a specific indication when there are a plurality of substances corresponding to each component in the composition. means.
  • the term “layer” includes a configuration formed in a part in addition to a configuration formed in the entire surface when observed as a plan view.
  • the n-type diffusion layer forming composition of the present embodiment contains a glass powder containing a donor element and having a particle diameter d90 of 0.1 ⁇ m to 1.5 ⁇ m, and a dispersion medium.
  • the n-type diffusion layer forming composition of the present embodiment may further contain other additives as necessary in consideration of suitability (applicability) of the composition.
  • the n-type diffusion layer forming composition contains at least a glass powder containing a donor element, and can be formed on the semiconductor substrate by thermally diffusing the donor element after being applied to the semiconductor substrate. Say material.
  • n-type diffusion layer forming composition containing a donor element and containing a glass powder having a particle diameter d90 of 0.1 ⁇ m to 1.5 ⁇ m, the semiconductor in the coating region of the n-type diffusion layer forming composition during the drying process Even when the thickness of the central part in the surface direction of the substrate is reduced by the frame phenomenon, if the glass powder has a particle diameter in the above range, a high presence ratio of the glass powder can be ensured. Further, since the melting time of the glass powder can be shortened during the diffusion treatment, a glass layer having no pinhole can be formed on a micro scale. Thereby, an n-type diffusion layer having a more uniform phosphorus concentration is formed at a desired portion of the semiconductor substrate, and unnecessary n-type diffusion layers are not formed on the back surface and side surfaces of the semiconductor substrate.
  • the composition for forming an n-type diffusion layer of the present embodiment is applied, the side etching step that is essential in the gas phase reaction method widely used in the past is not necessary, and the process is simplified.
  • the step of converting the n-type diffusion layer formed on the back surface into the p + -type diffusion layer is not necessary. Therefore, the method for forming the p + -type diffusion layer on the back surface and the material, shape, and thickness of the back electrode are not limited, and the choice of the manufacturing method to be applied and the material and shape of the back electrode is expanded.
  • production of the internal stress in the semiconductor substrate resulting from the thickness of a back surface electrode is suppressed, and the curvature of a semiconductor substrate is also suppressed.
  • the glass powder contained in the n-type diffusion layer forming composition of the present embodiment is melted by firing to form a glass layer on the n-type diffusion layer.
  • the glass layer is formed on the n-type diffusion layer also in the conventional gas phase reaction method or the method of applying a phosphate-containing solution or paste. Therefore, the glass layer produced
  • the donor element in the glass powder is not easily volatilized even during the heat treatment (firing), the generation of the volatilizing gas suppresses the formation of n-type diffusion layers not only on the surface of the semiconductor substrate but also on the back surface and side surfaces. . For this reason, the donor element is considered to be difficult to volatilize because it is bonded to other elements as constituent elements in the glass.
  • the n-type diffusion layer forming composition of the present embodiment can form an n-type diffusion layer having a desired concentration in a desired portion of the semiconductor substrate, an n-type donor element (dopant). It is possible to form a selective region having a high concentration of.
  • a selective region having a high concentration of the n-type donor element is formed by a gas phase reaction method or a method using a phosphate-containing solution or paste, which is a general method for forming an n-type diffusion layer. That is generally difficult.
  • a donor element is an element that can form an n-type diffusion layer by diffusing (doping) into a semiconductor substrate.
  • a Group 15 element can be used, and examples thereof include P (phosphorus), Sb (antimony), Bi (bismuth), and As (arsenic). From the viewpoints of safety, easiness of vitrification, and the like, it is preferably at least one selected from P (phosphorus) and Sb (antimony).
  • the donor element-containing substance used to introduce the donor element to the glass powder for example, include P 2 O 3, P 2 O 5, Sb 2 O 3, Bi 2 O 3 and As 2 O 3, P 2 It is preferable to use at least one selected from the group consisting of O 3 , P 2 O 5 and Sb 2 O 3 .
  • the glass powder containing a donor element can control a melting temperature, a softening temperature, a glass transition temperature, chemical durability, etc. by adjusting a component ratio as needed. It is preferable that the glass powder containing a donor element further contains a glass component substance described below.
  • glass component material examples include SiO 2 , K 2 O, Na 2 O, Li 2 O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, SnO, ZrO 2 , WO 3 , MoO 3 , MnO, La 2 O 3 , Nb 2 O 5 , Ta 2 O 5 , Y 2 O 3 , TiO 2 , ZrO 2 , GeO 2 , TeO 2 and Lu 2 O 3 can be mentioned, SiO 2 , K 2 O, Na It is preferable to use at least one selected from the group consisting of 2 O, Li 2 O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, SnO, ZrO 2 , WO 3 , MoO 3 and MnO.
  • the glass powder containing a donor element examples include a system containing both the donor element-containing substance and the glass component substance, and at least selected from the group consisting of P 2 O 3 , P 2 O 5 and Sb 2 O 3. and one of the donor element-containing substance, the group consisting of SiO 2, K 2 O, Na 2 O, Li 2 O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, SnO, ZrO 2 and MoO 3 It is preferable that the glass powder contains at least one glass component substance selected more.
  • the glass powder containing a donor element examples include a P 2 O 5 —SiO 2 system (described in the order of a donor element-containing substance—a glass component substance, the same applies hereinafter), a P 2 O 5 —K 2 O system, P 2 O 5 -Na 2 O-based, P 2 O 5 -Li 2 O system, P 2 O 5 -BaO-based, P 2 O 5 -SrO based, P 2 O 5 -CaO-based, P 2 O 5 -MgO-based, P 2 O 5 —BeO, P 2 O 5 —ZnO, P 2 O 5 —CdO, P 2 O 5 —PbO, P 2 O 5 —SnO, P 2 O 5 —GeO 2 , P 2 O 5 -TeO 2 system such as a donor element-containing material as a system containing P 2 O 5, and including Sb 2 O 3 as a donor element-containing material instead of P 2 O 5 of system containing
  • a glass powder containing two or more kinds of donor element-containing substances such as a P 2 O 5 —Sb 2 O 3 system and a P 2 O 5 —As 2 O 3 system, may be used.
  • a composite glass containing two components has been exemplified, but a glass powder containing three or more components as required may be used, such as a P 2 O 5 —SiO 2 —MgO system.
  • the content ratio of the glass component substance in the glass powder is preferably set appropriately in consideration of the melting temperature, the softening temperature, the glass transition temperature, the chemical durability, and the like, and generally 0.1 mass% to 95 mass%. It is preferably 0.5% by mass to 90% by mass.
  • the content ratio of SiO 2 in the case of the glass powder containing SiO 2 is preferably from 10 mass% to 90 mass%, more preferably from 10 wt% to 50 wt%, 10 More preferably, the content is from 30% by mass to 30% by mass.
  • the softening temperature of the glass powder is preferably 400 ° C. to 900 ° C. from the viewpoints of diffusibility during the diffusion treatment and dripping. Further, it is more preferably 600 ° C. to 800 ° C., and further preferably 700 ° C. to 800 ° C. If the softening temperature is 400 ° C. or higher, it is suppressed that the viscosity of the glass becomes too low during the diffusion treatment, and it is difficult for dripping to occur, so that the formation of the n-type diffusion layer other than the specific portion tends to be suppressed. It is in. Further, when the softening temperature is 900 ° C.
  • the softening temperature of the glass powder is in the range of 400 ° C. to 900 ° C., no dripping will occur, so that it is possible to form an n-type diffusion layer in a desired shape in a specific region after the diffusion treatment.
  • the n-type diffusion layer forming composition is applied in a linear pattern having a width of a ⁇ m, the linear width b after the diffusion treatment can hold a linear pattern in the range of b ⁇ 1.5 a ⁇ m.
  • the softening temperature of the glass powder can be obtained from a differential heat (DTA) curve or the like using a DTG-60H type differential heat / thermogravimetric simultaneous measuring device manufactured by Shimadzu Corporation.
  • DTA differential heat
  • Examples of the shape of the glass powder include a substantially spherical shape, a flat shape, a block shape, a plate shape, a scale shape, and the like, and a coating property (applicability to the substrate) and uniform diffusibility when an n-type diffusion layer forming composition is used. From this point, it is desirable that the shape is substantially spherical, flat or plate-like.
  • the particle diameter d90 of the glass powder needs to be 0.1 ⁇ m to 1.5 ⁇ m. Further, it is preferably 0.2 ⁇ m to 0.5 ⁇ m, and more preferably 0.2 ⁇ m to 0.3 ⁇ m.
  • the particle diameter d90 of the glass powder needs to be 0.1 ⁇ m to 1.5 ⁇ m. Further, it is preferably 0.2 ⁇ m to 0.5 ⁇ m, and more preferably 0.2 ⁇ m to 0.3 ⁇ m.
  • Whether a uniform n-type diffusion layer is formed can be determined by, for example, subjecting the semiconductor substrate on which the n-type diffusion layer is formed to a thermal oxidation treatment at 900 ° C. to 1000 ⁇ m or more formed on the semiconductor substrate in the n-type diffusion layer region. This can be confirmed by the variation of the oxide film of about 3000 mm.
  • the oxidation rate on the surface of a semiconductor substrate depends on the concentration of the diffused donor element. Therefore, when there is a region where the donor element is not sufficiently diffused, the variation of the oxide film thickness increases in the plane of the semiconductor substrate.
  • the thickness of the oxide film is measured using an ellipsometer MARY-102 manufactured by Fibravo.
  • the variation of the oxide film can be confirmed by measuring nine points in the plane and the ratio between the maximum value and the minimum value (maximum value / minimum value).
  • the variation in the oxide film thickness can be evaluated as a uniform n-type diffusion layer formed when the ratio (maximum value / minimum value) is 1.00 to 1.10.
  • the color of the oxide film is observed using an optical microscope, and it can be confirmed that the oxide film is uniformly formed from the uneven color.
  • a uniform n-type diffusion layer is formed on a microscale.
  • the micro scale indicates a range of 1 ⁇ m to 10 ⁇ m in the surface direction or thickness direction of the semiconductor substrate.
  • the particle diameter d90 refers to the particle diameter at which 90% of the total particle diameter is accumulated sequentially from the smallest particle diameter when a volume distribution integrated curve of particle diameter is drawn.
  • the volume distribution integrated curve can be measured with a laser scattering diffraction particle size distribution analyzer (manufactured by Beckman Coulter, Inc.) or the like.
  • the average particle diameter d50 of the glass powder used in this embodiment is preferably 0.05 ⁇ m to 0.5 ⁇ m.
  • the average particle diameter d50 is more preferably 0.05 ⁇ m to 0.3 ⁇ m, and even more preferably 0.05 ⁇ m to 0.2 ⁇ m.
  • the average particle diameter d50 of the glass powder represents a volume average particle diameter, and can be measured by a laser scattering diffraction particle size distribution analyzer (manufactured by Beckman Coulter, Inc.).
  • the glass powder containing a donor element is produced by the following procedure.
  • raw materials for example, a donor element-containing material and a glass component material are weighed and filled in a crucible.
  • the crucible material include platinum, platinum-rhodium, iridium, alumina, quartz, and carbon.
  • the material of the crucible is appropriately selected in consideration of the melting temperature, atmosphere, reactivity with the molten material, and the like.
  • the donor element-containing material and the glass component material are heated to a melt by a temperature corresponding to the glass composition in an electric furnace. At this time, it is desirable to stir the melt uniformly.
  • the obtained melt is poured onto a zirconia substrate, a carbon substrate, or the like to vitrify the melt.
  • the glass is crushed into powder.
  • a known method such as a jet mill, a bead mill, or a ball mill can be applied to the pulverization.
  • the content ratio of the glass powder containing the donor element in the n-type diffusion layer forming composition is determined in consideration of application suitability (applicability), diffusibility of the donor element, and the like.
  • the content ratio of the glass powder in the n-type diffusion layer forming composition is preferably 0.1% by mass to 95% by mass, more preferably 1% by mass to 90% by mass.
  • the content is more preferably 5% by mass to 85% by mass, and particularly preferably 2% by mass to 80% by mass.
  • the content ratio of the metal particles in the n-type diffusion layer forming composition is preferably 30% by mass or less, more preferably 20% by mass or less, and still more preferably 10% by mass or less.
  • a dispersion medium is a medium in which glass powder containing a donor element is dispersed in a composition. Specifically, at least one selected from the group consisting of a binder and a solvent is employed as the dispersion medium.
  • binder examples include polyvinyl alcohol, polyacrylamide, polyvinyl amide, polyvinyl pyrrolidone, polyethylene oxide, polysulfonic acid, acrylamide alkyl sulfonic acid, cellulose ether, cellulose derivative, carboxymethyl cellulose, hydroxyethyl cellulose, ethyl cellulose, gelatin, starch and starch derivative, Sodium alginate and sodium alginate derivatives, xanthan and xanthan derivatives, guar gum and guar gum derivatives, scleroglucan and scleroglucan derivatives, tragacanth and tragacanth derivatives, dextrin and dextrin derivatives, poly (meth) acrylic acid, poly (meth) acrylic acid ester (For example, polyalkyl (meth) acrylate, polydimethyl Ruaminoechiru (meth) acrylate), polybutadiene, polystyrene, and copolymers thereof.
  • the molecular weight of the binder (for example, the weight average molecular weight) is not particularly limited, and it is desirable to appropriately adjust in view of the desired viscosity as the composition.
  • Solvents include acetone, methyl ethyl ketone, methyl-n-propyl ketone, methyl-i-propyl ketone, methyl-n-butyl ketone, methyl-i-butyl ketone, methyl-n-pentyl ketone, methyl-n-hexyl ketone, diethyl ketone , Ketone solvents such as dipropyl ketone, di-i-butyl ketone, trimethylnonanone, cyclohexanone, cyclopentanone, methylcyclohexanone, 2,4-pentanedione, acetonylacetone; diethyl ether, methyl ethyl ether, methyl-n- Propyl ether, di-i-propyl ether, tetrahydrofuran, methyltetrahydrofuran, dioxane, dimethyldioxane, ethylene glycol di
  • n-type diffusion layer forming composition from the viewpoint of applicability to the substrate, at least one selected from the group consisting of terpineol, diethylene glycol mono-n-butyl ether and diethylene glycol mono-n-butyl ether acetate is preferred, and terpineol and At least one selected from diethylene glycol mono-n-butyl ether is a more preferable solvent.
  • the content ratio of the dispersion medium in the n-type diffusion layer forming composition is determined in consideration of applicability, donor concentration, and the like.
  • the viscosity of the n-type diffusion layer forming composition is preferably 10 mPa ⁇ s to 1000000 mPa ⁇ s at 25 ° C., more preferably 50 mPa ⁇ s to 200000 mPa ⁇ s at 25 ° C. in consideration of applicability. More preferably, it is s to 100,000 mPa ⁇ s.
  • the viscosity of the n-type diffusion layer forming composition is measured at 25 ° C. using an E-type viscometer (manufactured by Tokyo Keiki Co., Ltd.) at a rotation speed of 5 rpm (min ⁇ 1 ).
  • the n-type diffusion layer forming composition may contain other additives as necessary.
  • Other additives include organometallic compounds, silane coupling agents, organic fillers, inorganic fillers, thixotropic agents such as organic acid salts, wettability improvers, leveling agents, surfactants, plasticizers, fillers, Examples include antifoaming agents, stabilizers, antioxidants, and fragrances.
  • Other additives can be used in an amount of about 0.01 to 20 parts by mass with respect to 100 parts by mass of the total amount of the n-type diffusion layer forming composition. Moreover, these can be used individually or in combination of 2 or more types.
  • the method for producing an n-type diffusion layer includes a step of applying the n-type diffusion layer forming composition on a semiconductor substrate and a thermal diffusion on the semiconductor substrate after the application of the n-type diffusion layer forming composition. And a step of performing a process.
  • the manufacturing method of the solar cell element of this embodiment includes the step of applying the n-type diffusion layer forming composition on a semiconductor substrate, and the thermal diffusion to the semiconductor substrate after applying the n-type diffusion layer forming composition. And a step of forming an n-type diffusion layer on the semiconductor substrate after applying the n-type diffusion layer forming composition and a step of forming an electrode on the formed n-type diffusion layer. .
  • FIG. 1 is a schematic cross-sectional view conceptually showing an example of a manufacturing process of a solar cell element in the manufacturing method of the present embodiment.
  • 10 is a p-type semiconductor substrate
  • 12 is an n-type diffusion layer
  • 14 is a p + -type diffusion layer
  • 16 is an antireflection film
  • 18 is a front electrode
  • 20 is a back electrode (electrode layer).
  • an alkaline solution is applied to a silicon substrate which is a p-type semiconductor substrate 10 to remove a damaged layer, and a texture structure is obtained by etching.
  • a texture structure is obtained by etching.
  • the damaged layer on the silicon surface generated when slicing from the ingot is removed with 20% by mass caustic soda.
  • etching is performed with a mixed solution of 1% by mass caustic soda and 10% by mass isopropyl alcohol to form a texture structure (the description of the texture structure is omitted in the figure).
  • a texture structure on the light receiving surface (surface) side, a light confinement effect is promoted, and high efficiency is achieved.
  • an n-type diffusion layer forming composition layer 11 is formed by applying an n-type diffusion layer forming composition to the surface of the p-type semiconductor substrate 10, that is, the surface that serves as a light receiving surface.
  • coating method of an n type diffused layer formation composition For example, a printing method, a spin coat method, a brush coating method, a spray method, a doctor blade method, a roll coat method, and an inkjet method are mentioned. .
  • the coating amount of the n-type diffusion layer forming composition is not particularly limited.
  • the glass powder amount can be 5 g / m 2 to 100 g / m 2, and it can be 10 g / m 2 to 50 g / m 2. Is preferred.
  • the coating thickness may be thin at 5 g / m 2 to 15 g / m 2 , but when the particle diameter d90 of the glass powder is 0.1 ⁇ m to 1.5 ⁇ m, the glass layer does not penetrate during the diffusion treatment, A more uniform n-type diffusion layer can be formed on a scale.
  • a drying step for volatilizing the solvent contained in the composition may be necessary after application.
  • drying is performed at a temperature of about 80 ° C. to 300 ° C. for about 1 to 10 minutes when using a hot plate, and about 10 to 30 minutes when using a dryer or the like.
  • the drying conditions depend on the solvent composition of the n-type diffusion layer forming composition, and are not particularly limited to the above conditions in the present embodiment.
  • the manufacturing method of the p + -type diffusion layer (high concentration electric field layer) 14 on the back surface is a method based on conversion from an n-type diffusion layer to a p + -type diffusion layer by aluminum.
  • any conventionally known method can be adopted, and the options of the manufacturing method are expanded. Therefore, for example, the composition 13 containing a Group 13 element such as B (boron) is applied to the back surface of the p-type semiconductor substrate 10 (the surface opposite to the surface to which the n-type diffusion layer forming composition is applied). , P + -type diffusion layer 14 can be formed.
  • composition 13 containing a Group 13 element such as B (boron) for example, a glass powder containing an acceptor element is used instead of a glass powder containing a donor element, and the composition 13 is made in the same manner as the n-type diffusion layer forming composition.
  • a p-type diffusion layer forming composition may be mentioned.
  • the acceptor element may be a Group 13 element, and examples thereof include B (boron), Al (aluminum), and Ga (gallium).
  • the glass powder containing acceptor element comprising at least one member selected from the group consisting of B 2 O 3, Al 2 O 3 and Ga 2 O 3.
  • the method for applying the p-type diffusion layer forming composition to the back surface of the silicon substrate is the same as the method for applying the n-type diffusion layer forming composition described above to the silicon substrate.
  • the semiconductor substrate granted the p-type diffusion layer forming composition on the back side similarly to the thermal diffusion treatment of the applied semiconductor substrate of n-type diffusion layer forming composition described below by a thermal diffusion process, p on the back +
  • the mold diffusion layer 14 can be formed.
  • the thermal diffusion treatment of the p-type diffusion layer forming composition is preferably performed simultaneously with the thermal diffusion treatment of the n-type diffusion layer forming composition.
  • the p-type semiconductor substrate 10 on which the n-type diffusion layer forming composition layer 11 is formed is subjected to a thermal diffusion treatment at a temperature not lower than the melting point of the glass powder in the n-type diffusion layer forming composition, for example, 600 ° C. to 1200 ° C.
  • a thermal diffusion treatment as shown in FIG. 1C, the donor element diffuses into the semiconductor substrate, and the n-type diffusion layer 12 is formed.
  • a known continuous furnace, batch furnace, or the like can be applied to the thermal diffusion treatment. Further, the furnace atmosphere during the thermal diffusion treatment can be appropriately adjusted to air, oxygen, nitrogen or the like.
  • the thermal diffusion treatment time can be appropriately selected according to the content ratio of the glass powder containing the donor element contained in the n-type diffusion layer forming composition. For example, it can be 1 minute to 60 minutes, and preferably 2 minutes to 30 minutes.
  • a glass layer such as phosphate glass is formed on the surface of the formed n-type diffusion layer 12. For this reason, this phosphate glass is removed by etching.
  • etching any of known methods such as a method of immersing the p-type semiconductor substrate 10 in an acid such as hydrofluoric acid and a method of immersing the p-type semiconductor substrate 10 in an alkali such as caustic soda can be applied.
  • the immersion time is not particularly limited and is generally 0.5 minutes to 30 minutes, preferably 1 minute to 10 minutes. Can do.
  • the n-type diffusion layer 12 is formed at a desired site, and unnecessary n-type diffusion layers are not formed on the back surface and side surfaces. Therefore, in the conventional method of forming an n-type diffusion layer by a gas phase reaction method, a side etching process for removing an unnecessary n-type diffusion layer formed on a side surface is essential. According to the manufacturing method of the embodiment, the side etching process becomes unnecessary, and the process is simplified. As described above, by the manufacturing method of the present embodiment, a more uniform n-type diffusion layer having a desired shape is formed in a desired portion in a short time.
  • the thermal expansion coefficient of aluminum is significantly different from that of silicon used as a substrate, a large internal stress is generated in the silicon substrate during the firing and cooling process, causing warpage of the silicon substrate. .
  • This internal stress has a problem that the crystal grain boundary is damaged and the power loss increases.
  • the warpage easily damages the solar cell element when the solar cell element is transported in the module process and when the solar cell element is connected to a copper wire called a tab wire.
  • the thickness of the silicon substrate has been reduced due to the improvement of the slice processing technique, and the solar cell element tends to be easily broken.
  • n-type diffusion layer since an unnecessary n-type diffusion layer is not formed on the back surface, it is not necessary to convert the n-type diffusion layer to the p + -type diffusion layer, and it is necessary to increase the thickness of the aluminum layer. Disappears. As a result, generation of internal stress and warpage in the silicon substrate can be suppressed. As a result, increase in power loss and damage to the solar cell element can be suppressed.
  • the manufacturing method of the p + -type diffusion layer (high concentration electric field layer) 14 on the back surface is a method based on conversion from an n-type diffusion layer to a p + -type diffusion layer by aluminum.
  • any conventionally known method can be adopted, and the options of the manufacturing method are expanded.
  • a p-type diffusion layer forming composition configured in the same manner as the n-type diffusion layer forming composition is applied to the back surface of the silicon substrate.
  • the material used for the back electrode 20 is not limited to Group 13 aluminum, and Ag (silver), Cu (copper), or the like can be applied. Can also be formed thin.
  • an antireflection film 16 is formed on the n-type diffusion layer 12.
  • the antireflection film 16 is formed by applying a known technique.
  • the antireflection film 16 is a silicon nitride film, it is formed by a plasma CVD method using a mixed gas of SiH 4 and NH 3 as a raw material. At this time, hydrogen diffuses into the crystal, and orbitals that do not contribute to the bonding of silicon atoms, that is, dangling bonds and hydrogen are bonded to inactivate defects (hydrogen passivation).
  • the mixed gas flow ratio NH 3 / SiH 4 is 0.05 to 1.0
  • the reaction chamber pressure is 13.3 Pa (0.1 Torr) to 266.6 Pa (2 Torr)
  • the temperature during film formation The silicon nitride film is formed under the conditions of 300 ° C. to 550 ° C. and a frequency for plasma discharge of 100 kHz or more.
  • a surface electrode metal paste is printed on the antireflection film 16 on the surface (light-receiving surface) by screen printing and dried to form a surface electrode metal paste layer 17.
  • the metal paste for a surface electrode contains (1) metal particles and (2) glass particles as essential components, and includes (3) a resin binder and (4) other additives as necessary.
  • the metal paste layer 19 for the back electrode is also formed on the p + type diffusion layer 14 on the back surface.
  • the material and forming method of the back electrode metal paste layer 19 are not particularly limited.
  • the back electrode metal paste layer 19 may be formed by applying and drying a back electrode paste containing a metal such as aluminum, silver, or copper. At this time, you may provide the silver paste layer for silver electrode formation in a part of back surface for the connection between the solar cell elements in a module process.
  • the electrode metal paste layer 17 is fired to complete the solar cell element.
  • the antireflection film 16 that is an insulating film is melted by the glass particles contained in the electrode metal paste on the surface side, and a part of the surface of the p-type semiconductor substrate 10 is also partially formed.
  • the metal particles for example, silver particles
  • the paste form a contact portion with the p-type semiconductor substrate 10 and solidify. Thereby, the formed surface electrode 18 and the p-type semiconductor substrate 10 are electrically connected. This is called fire-through.
  • the back electrode metal paste of the back electrode metal paste layer 19 is baked to form the back electrode 20.
  • FIG. 2 is a plan view of a solar cell element in which the surface electrode 18 includes a bus bar electrode 30 and a finger electrode 32 intersecting with the bus bar electrode 30 as viewed from the surface.
  • FIG. It is a perspective view which expands and shows a part of solar cell element.
  • Such a surface electrode 18 can be formed by means such as screen printing of the above-described metal paste, plating of an electrode material, vapor deposition of an electrode material by electron beam heating in a high vacuum, and the like.
  • the surface electrode 18 composed of the bus bar electrode 30 and the finger electrode 32 is generally used as an electrode on the light receiving surface side and is well known, and it is possible to apply known forming means for the bus bar electrode and finger electrode on the light receiving surface side. it can.
  • the solar cell element in which the n-type diffusion layer is formed on the front surface, the p + -type diffusion layer is formed on the back surface, and the front surface electrode and the back surface electrode are further provided on the respective layers has been described.
  • a back contact type solar cell element can be produced.
  • the back contact type solar cell element has all electrodes provided on the back surface to increase the area of the light receiving surface. That is, in the back contact type solar cell element, it is necessary to form both the n-type diffusion region and the p + -type diffusion region on the back surface to form a pn junction structure.
  • the n-type diffusion layer forming composition of the present embodiment can form an n-type diffusion site at a specific site. Therefore, the n-type diffusion layer forming composition of the present embodiment can be suitably applied to the production of the back contact type solar cell element.
  • the use of the n-type diffusion layer forming composition in the manufacture of an n-type diffusion layer, and the n-type diffusion layer in the manufacture of a solar cell element including the semiconductor substrate, the n-type diffusion layer, and an electrode The use of forming compositions is also encompassed.
  • a desired shape can be obtained in a specific region in a short time without forming an unnecessary n-type diffusion layer, and on a microscale.
  • a uniform n-type diffusion layer can be obtained.
  • a solar cell element having such an n-type diffusion layer can be obtained without forming an unnecessary n-type diffusion layer.
  • Example 1 P 2 O 5 —SiO 2 —MgO-based glass (softening temperature 700 ° C., P 2 O 5 : 58.58) having a substantially spherical particle shape, an average particle diameter d50 of 0.15 ⁇ m, and a particle diameter d90 of 0.25 ⁇ m.
  • SiO 2 : 29.7%, MgO: 12.1% 7.5 g of powder, 2.5 g of ethyl cellulose, and 40.0 g of terpineol were mixed using an automatic mortar kneader to make a paste, An n-type diffusion layer forming composition was prepared.
  • the shape of the glass powder was determined by observing with a TM-1000 scanning electron microscope manufactured by Hitachi High-Technologies Corporation.
  • the average particle diameter d50 and particle diameter d90 of the glass powder were calculated using an LS 13 320 type laser scattering diffraction particle size distribution analyzer (measurement wavelength: 632 nm) manufactured by Beckman Coulter, Inc.
  • the prepared paste was applied to the surface of the p-type silicon substrate by screen printing so as to have a range of 45 mm ⁇ 45 mm, and dried on a hot plate at 150 ° C. for 5 minutes.
  • a thermal diffusion treatment is performed by holding in an electric furnace set at 950 ° C. for 20 minutes in an air flow (0.9 cm / s) atmosphere, and then the substrate is immersed in hydrofluoric acid for 5 minutes to remove the glass layer. And washed with running water. Thereafter, drying was performed.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 12 ⁇ / ⁇ , P (phosphorus) was diffused, and an n-type diffusion layer was formed.
  • the sheet resistance on the back surface was 1000000 ⁇ / ⁇ or more, which was not measurable, and the n-type diffusion layer was not formed.
  • the sheet resistance was measured at 25 ° C. by a four-probe method using a Loresta-EP MCP-T360 type low resistivity meter manufactured by Mitsubishi Chemical Corporation.
  • the silicon substrate on which the n-type diffusion layer was formed was thermally oxidized by holding it in an electric furnace set at 900 ° C. in an oxygen flow (0.9 cm / s) atmosphere for 180 minutes to form an oxide film. .
  • the in-plane oxide film thickness variation ⁇ was 1.03, and a uniform n-type diffusion layer was formed.
  • ⁇ represents a ratio of maximum film thickness / minimum film thickness, and was calculated from nine oxide film thicknesses in the coated surface. The thickness of the oxide film was measured using an ellipsometer MARY-102 manufactured by Fibravo.
  • Example 2 An n-type diffusion layer was formed in the same manner as in Example 1 except that the average particle diameter d50 of the glass powder was 0.22 ⁇ m and the particle diameter d90 was 0.40 ⁇ m.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 13 ⁇ / ⁇ , P (phosphorus) diffused, and an n-type diffusion layer was formed.
  • the sheet resistance on the back surface was 1000000 ⁇ / ⁇ or more, which was not measurable, and the n-type diffusion layer was not formed.
  • the variation ⁇ of the oxide film thickness formed on the n-type diffusion layer was 1.04, and a uniform n-type diffusion layer was formed.
  • Example 3 An n-type diffusion layer was formed in the same manner as in Example 1 except that the average particle diameter d50 of the glass powder was 0.35 ⁇ m and the particle diameter d90 was 0.80 ⁇ m.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 13 ⁇ / ⁇ , P (phosphorus) diffused, and an n-type diffusion layer was formed.
  • the sheet resistance on the back surface was 1000000 ⁇ / ⁇ or more, which was not measurable, and the n-type diffusion layer was not formed.
  • the variation ⁇ of the oxide film thickness formed on the n-type diffusion layer was 1.05, and a uniform n-type diffusion layer was formed.
  • Example 4 P 2 O 5 —SiO 2 —MgO-based glass having an average particle diameter d50 of 0.15 ⁇ m and a particle diameter d90 of 0.25 ⁇ m (softening temperature 700 ° C., P 2 O 5 : 58.2%, SiO 2 : 29 .7%, MgO: 12.1%) n-type diffusion layer using 15 g of powder, 2.5 g of ethylcellulose, 31 g of terpineol, and 1.5 g of silane coupling agent KBM602 (manufactured by Shin-Etsu Chemical Co., Ltd.) An n-type diffusion layer was formed in the same manner as in Example 1 except that the forming composition was prepared.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 10 ⁇ / ⁇ , P (phosphorus) diffused, and an n-type diffusion layer was formed.
  • the sheet resistance on the back surface was 1000000 ⁇ / ⁇ or more, which was not measurable, and the n-type diffusion layer was not formed.
  • the variation ⁇ of the oxide film thickness formed on the n-type diffusion layer was 1.04, and a uniform n-type diffusion layer was formed.
  • Example 5 P 2 O 5 —SiO 2 —MgO glass having an average particle diameter d50 of 0.15 ⁇ m and a particle diameter d90 of 0.25 ⁇ m (softening temperature 650 ° C., P 2 O 5 : 61.0%, SiO 2 : 25 0.1% MgO: 13.9%)
  • n-type diffusion layer using 15 g of powder, 2.5 g of ethylcellulose, 31 g of terpineol, and 1.5 g of silane coupling agent KBM602 (manufactured by Shin-Etsu Chemical Co., Ltd.) An n-type diffusion layer was formed in the same manner as in Example 1 except that the forming composition was prepared.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 10 ⁇ / ⁇ , P (phosphorus) diffused, and an n-type diffusion layer was formed.
  • the sheet resistance on the back surface was 1000000 ⁇ / ⁇ or more, which was not measurable, and the n-type diffusion layer was not formed.
  • the variation ⁇ of the oxide film thickness formed on the n-type diffusion layer was 1.03, and a uniform n-type diffusion layer was formed.
  • n-type diffusion layer was formed in the same manner as in Example 1 except that the average particle diameter d50 of the glass powder was 0.57 ⁇ m and the particle diameter d90 was 2.55 ⁇ m.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 15 ⁇ / ⁇ , P (phosphorus) diffused, and an n-type diffusion layer was formed.
  • the sheet resistance on the back surface was 1000000 ⁇ / ⁇ or more, which was not measurable, and the n-type diffusion layer was not formed.
  • the variation ⁇ of the oxide film thickness formed on the n-type diffusion layer was 1.55, and the n-type diffusion layer was not uniform.
  • the color of the oxide film thickness was observed using an optical microscope, there was a region having a 3 ⁇ m square and a different color of the oxide film, and the variation of the oxide film thickness was confirmed.
  • n-type diffusion layer was formed in the same manner as in Example 1 except that the average particle diameter d50 of the glass powder was 0.30 ⁇ m and the particle diameter d90 was 1.60 ⁇ m.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 13 ⁇ / ⁇ , P (phosphorus) diffused, and an n-type diffusion layer was formed.
  • the sheet resistance on the back surface was 1000000 ⁇ / ⁇ or more, which was not measurable, and the n-type diffusion layer was not formed.
  • the variation ⁇ of the oxide film thickness formed on the n-type diffusion layer was 1.35, and the n-type diffusion layer was non-uniform.
  • the color of the oxide film thickness was observed using an optical microscope, the color of the oxide film was slightly different at 2 ⁇ m square, and the variation of the oxide film thickness was confirmed.
  • n-type diffusion layer was formed in the same manner as in Example 1 except that ammonium dihydrogen phosphate (NH 4 H 2 PO 4 ) powder was used instead of P 2 O 5 —SiO 2 —MgO glass powder. .
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 20 ⁇ / ⁇ , P (phosphorus) diffused, and an n-type diffusion layer was formed.
  • the sheet resistance on the back surface was 20 ⁇ / ⁇ , and an n-type diffusion layer was also formed on the back surface.

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne : une composition permettant la formation d'une couche de diffusion du type n, la composition contenant une poudre de verre comprenant un élément donneur et ayant un diamètre de particule d90 de 0,1 à 1,5 µm, et un milieu de dispersion ; un procédé de fabrication d'une couche de diffusion du type n par utilisation de la composition ; et un procédé de fabrication d'un élément de cellule solaire.
PCT/JP2015/080806 2014-10-30 2015-10-30 Composition permettant la formation d'une couche de diffusion du type n, procédé de fabrication de couche de diffusion du type n et procédé de fabrication d'élément de cellule solaire Ceased WO2016068315A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201580056781.9A CN107148662A (zh) 2014-10-30 2015-10-30 n型扩散层形成组合物、n型扩散层的制造方法及太阳能电池元件的制造方法
JP2016556674A JPWO2016068315A1 (ja) 2014-10-30 2015-10-30 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法及び太陽電池素子の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014222012 2014-10-30
JP2014-222012 2014-10-30

Publications (1)

Publication Number Publication Date
WO2016068315A1 true WO2016068315A1 (fr) 2016-05-06

Family

ID=55857648

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2015/080806 Ceased WO2016068315A1 (fr) 2014-10-30 2015-10-30 Composition permettant la formation d'une couche de diffusion du type n, procédé de fabrication de couche de diffusion du type n et procédé de fabrication d'élément de cellule solaire

Country Status (4)

Country Link
JP (1) JPWO2016068315A1 (fr)
CN (1) CN107148662A (fr)
TW (1) TW201626588A (fr)
WO (1) WO2016068315A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012067119A1 (fr) * 2010-11-17 2012-05-24 日立化成工業株式会社 Procédé de fabrication d'une cellule solaire
WO2013005738A1 (fr) * 2011-07-05 2013-01-10 日立化成工業株式会社 COMPOSITION POUR LA FORMATION D'UNE COUCHE DE DIFFUSION DE TYPE n, PROCÉDÉ POUR LA PRODUCTION D'UNE COUCHE DE DIFFUSION DE TYPE n ET PROCÉDÉ DE PRODUCTION D'ÉLÉMENTS DE CELLULE SOLAIRE
JP2015115487A (ja) * 2013-12-12 2015-06-22 日立化成株式会社 半導体基板の製造方法、半導体基板、太陽電池素子の製造方法及び太陽電池素子
WO2015093608A1 (fr) * 2013-12-20 2015-06-25 日立化成株式会社 Procédé de fabrication d'un substrat semiconducteur, substrat semiconducteur, procédé de fabrication d'un élément de cellule solaire, et élément de cellule solaire

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008074679A (ja) * 2006-09-22 2008-04-03 Ngk Spark Plug Co Ltd セラミック多層部品及びその製造方法
JP2008105913A (ja) * 2006-10-27 2008-05-08 Kyocera Corp ガラス粉末およびその製法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012067119A1 (fr) * 2010-11-17 2012-05-24 日立化成工業株式会社 Procédé de fabrication d'une cellule solaire
WO2013005738A1 (fr) * 2011-07-05 2013-01-10 日立化成工業株式会社 COMPOSITION POUR LA FORMATION D'UNE COUCHE DE DIFFUSION DE TYPE n, PROCÉDÉ POUR LA PRODUCTION D'UNE COUCHE DE DIFFUSION DE TYPE n ET PROCÉDÉ DE PRODUCTION D'ÉLÉMENTS DE CELLULE SOLAIRE
JP2015115487A (ja) * 2013-12-12 2015-06-22 日立化成株式会社 半導体基板の製造方法、半導体基板、太陽電池素子の製造方法及び太陽電池素子
WO2015093608A1 (fr) * 2013-12-20 2015-06-25 日立化成株式会社 Procédé de fabrication d'un substrat semiconducteur, substrat semiconducteur, procédé de fabrication d'un élément de cellule solaire, et élément de cellule solaire

Also Published As

Publication number Publication date
CN107148662A (zh) 2017-09-08
TW201626588A (zh) 2016-07-16
JPWO2016068315A1 (ja) 2017-06-15

Similar Documents

Publication Publication Date Title
JP4868079B1 (ja) ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
JP5447397B2 (ja) ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池セルの製造方法
JP5958485B2 (ja) ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP5176159B1 (ja) ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP5176158B1 (ja) ｎ型拡散層形成組成物、ｎ型拡散層の製造方法及び太陽電池素子の製造方法
JP5541358B2 (ja) ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP5842431B2 (ja) ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2013026578A (ja) ｎ型拡散層の製造方法及び太陽電池素子の製造方法
JP6582747B2 (ja) ｎ型拡散層形成用組成物、ｎ型拡散層を有する半導体基板の製造方法、及び太陽電池セルの製造方法
JP5834578B2 (ja) ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
WO2016068315A1 (fr) Composition permettant la formation d'une couche de diffusion du type n, procédé de fabrication de couche de diffusion du type n et procédé de fabrication d'élément de cellule solaire
JP5333564B2 (ja) 太陽電池セルの製造方法
JP2016036034A (ja) ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2016006893A (ja) ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2013026477A (ja) ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2012231013A (ja) ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2013026472A (ja) ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2014146813A (ja) ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池素子の製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15853767

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2016556674

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15853767

Country of ref document: EP

Kind code of ref document: A1