WO2016043540A1 - Composition for forming conductive patterns and resin structure having conductive pattern - Google Patents

Abstract

The present invention relates to a composition for forming conductive patterns and a resin structure having a conductive pattern, capable of forming a conductive micropattern on various polymer resin products or resin layers using a simplified process and exhibiting excellent heat dissipation characteristics. The composition for forming conductive patterns comprises: a polymer resin; a non-conductive metal compound represented by a specific chemical formula; and a heat-dissipating material, wherein a metal nucleus is formed from the non-conductive metal compound by the irradiation of electromagnetic waves.

Description

 【Specification】

 [Name of invention]

 Resin structure which has composition for electroconductive pattern formation and electroconductive pattern [cross-reference with related application (s)]

 This application is filed with Korean Patent Application No. 10-2014-0123893 filed Sep. 17, 2014 and

Claims the benefit of priority based on Korean Patent Application No. 10-2015-0130982 filed on September 16, 2015, and all the contents disclosed in the documents of that Korean Patent Application are incorporated as part of this specification.

 Technical Field

 The present invention relates to a resin structure having a conductive pattern forming composition and a conductive pattern capable of forming a fine conductive pattern on a variety of polymer resin products or resin layers by a simplified process, and exhibiting excellent heat dissipation characteristics.

 Background Art

 In recent years, with the development of fine electronic technology, there is an increasing demand for structures in which fine conductive patterns are formed on the surface of polymer resin substrates (or products) such as various resin products or resin layers. The conductive pattern on the surface of the polymer resin substrate may be applied to form various objects such as antennas, various sensors, MEMS structures, RFID tags, or various circuit boards integrated in an electronic device case. As such, as the interest in the technology of forming the conductive pattern on the surface of the polymer resin substrate increases, some techniques related thereto have been proposed. However, there is no proposal to use such technology more effectively.

 For example, according to a known technique, a method of forming a conductive pattern by forming a metal layer on the surface of the polymer resin substrate and then applying photolithography or printing a conductive paste may be considered. However, when forming a conductive pattern according to this technique, there is a disadvantage that the required process or equipment is too complicated, or difficult to form a good and fine conductive pattern.

Therefore, the development of a technology that can more effectively form a fine conductive pattern on the surface of the polymer resin substrate in a simplified process has been required before. It is true.

 On the other hand, in the case of various electrical / electronic products and automotive parts, there is a problem of increasing the temperature of the conductive circuit board due to the high integration of the device and the adoption of the heat generating device to deteriorate overall performance and to reduce safety and lifespan. Accordingly, in order to solve such a problem, high heat dissipation spheres are indispensably employed in various electric / electronic products and automobile parts. However, due to heat sinks such as metal aluminum, which are commonly used, recent trends of miniaturization and light weight of electronic devices have not been made, and a problem arises in that the manufacturing process is complicated. Accordingly, there is a demand for technology development to reduce weight and size while expressing existing functions of electronic devices.

 [Content of invention]

 [Problem to solve]

 The present invention can form a fine conductive pattern on a variety of polymer resin products or resin layers by a simplified process, and provides a composition for forming a conductive pattern exhibiting excellent heat dissipation characteristics.

 The present invention also provides a resin structure having a conductive pattern formed from the composition for forming a conductive pattern through a conductive pattern forming method. [Measures of problem]

 According to one embodiment of the invention, a polymer resin; A non-conductive metal compound comprising at least one phosphate selected from the group consisting of phosphates represented by Formulas 1 to 4 below; The heat dissipating material includes a carbide, a carbon-based material, a nitride-based material, a metal oxide, or a mixture thereof, and a composition for forming a conductive pattern by electromagnetic wave irradiation in which metal nuclei are formed from the non-conductive metal compound by electromagnetic wave irradiation. Is provided.

 [Formula 1] [Formula 2]

 [Formula 3]

Cu ₂ - _z M ² _z P ₂ 0 ₇ [Formula 4]

Cu ₄ P ₂ 0 ₉

 In Formula 1, X is a free number between 0.5 and 1, and A is at least one metal selected from the group consisting of Li, Na, Cu, kg, and Au, and B is 1 selected from the group consisting of Sn, Ti, Zn, and Hf. More than one metal,

In Formula 2, y is a ratio of 0 to less than 3, M ¹ is Ti, V, Cr, Mn, Fe, Co, Ni, Y, Zn, Nb, Ma, Tc, Pd, Ag, Ta, W, Pt And at least one metal selected from the group consisting of Au,

In Chemical Formula 3, z is 0 or more and less than 2, and M ² is at least one metal selected from the group consisting of Zn, Mg, Ca, Sr, and Ba.

For example, as the phosphate of Formula 1, a phosphate having a ^3c space group having a trigonal structure may be used. In addition, as another example, the phosphate of Formula 1 may be a ^P1 space group having a triclinic structure or a monoclinic structure. Phosphates with Cc or C2 / c space groups can be used. ^'

Meanwhile, as the phosphate of Chemical Formula 2, a phosphate having a ^P1 space group having a triclinic structure may be used, and as the phosphate of Chemical Formula 3, Cu or M ² may be in the form of a distorted square pyramid in which five oxygen atoms are distorted. Enclosed structure; Or a structure surrounding Cu or M in the form of a distorted octahedron with six oxygen atoms _. Phosphate may be used, and as the phosphate of Chemical Formula 4, a phosphate having a ^P1 space group having a tetragonal structure or a Prima space group having a tetragonal structure may be used.

 Such non-conductive metal oxides may have an average particle size of 0.1-6. On the other hand, the heat dissipating material includes silicon carbide as carbide; Carbon based materials include carbon blocks, carbon nanotubes, abyss, graphene or a mixture thereof; Boron nitride, silicon nitride, aluminum nitride, or a combination thereof; The black metal oxide may include magnesium oxide, aluminum oxide, beryllium oxide, zinc oxide or a combination thereof.

In the composition for forming a conductive pattern according to the embodiment the polymer resin may include a thermosetting resin or a thermoplastic resin, for example, ABS (Acryl oni tile poly-butadiene styrene) resin, polyalkylene terephthalate resin, polyamide resin, polyphenylether resin, polyphenylene sulfide resin, polycarbonate resin, polypropylene resin and polyphthalamide resin It may include one or more selected from.

 In addition, the composition for forming a conductive pattern according to the embodiment includes the non-conductive metal compound described above in an amount of 0.01 to 10% by weight based on the total composition, and the heat dissipating material in an amount of 1 to 50% by weight based on the total composition It may include, and the remaining amount of polymer resin.

 In addition, the conductive pattern forming composition according to the embodiment is one or more additives selected from the group consisting of flame retardants, heat stabilizers, UV stabilizers, lubricants, antioxidants, inorganic fillers, color additives, layer reinforcing agents and functional reinforcing agents It may further include.

 On the other hand, according to another embodiment of the invention, a polymer resin substrate; A non-conductive metal compound comprising at least one phosphate selected from the group consisting of phosphates represented by the following Chemical Formulas 1 to 4 dispersed on a polymer resin substrate; Examples of heat dissipating materials dispersed in a polymer resin substrate include carbides, carbon-based materials, nitride-based materials, metal oxides, or mixtures thereof; An adhesive active surface comprising a metal nucleus exposed to a surface of a polymer resin substrate in a predetermined region; And a conductive pattern including a conductive metal layer formed on the adhesive active surface.

 [Formula 1] [Formula 2]

CU ₃ — ytfyP

 [Formula 3]

 [Formula 4]

Cu ₄ P ₂ 0 ₉

In Formula 1, X is a free number between 0.5 and 1, A is at least one metal selected from the group consisting of Li, Na, Cu, Ag and Au, B is selected from the group consisting of Sn, Ti, Zn and Hf At least one metal, In Formula 2, y is 0 or more and less than 3, M ¹ is Ti, V, Cr, Mn,

At least one metal selected from the group consisting of Fe, Co, Ni, Y, Zn, Nb, Mo, Tc, Pd, Ag ᅳ Ta, W, Pt and Au,

In Chemical Formula 3, z is a free number less than 0 and less than 2, and M ² is at least one metal selected from the group consisting of Zn, Mg, Ca, Sr, and Ba.

 In the resin structure according to another exemplary embodiment, the predetermined region in which the adhesive active surface and the conductive metal layer are formed may correspond to a region in which electromagnetic waves are irradiated onto the polymer resin substrate.

 【Effects of the Invention】

 According to the present invention, a composition for forming a conductive pattern which enables to form a fine conductive pattern on a polymer resin substrate such as various polymer resin products or resin layers by a very simplified process of irradiating electromagnetic waves such as a laser, and formed therefrom A resin structure having a conductive pattern can be provided.

 In particular, by using the composition for forming a conductive pattern, it is possible to mold a resin structure in which the heat dissipation structure is integrated, and meet the needs of those skilled in the art to realize various colors of the resin structure (various polymer resin products or resin layers, etc.). It is possible to easily form a good conductive pattern on such a resin structure while effectively stratifying.

 Therefore, using such a composition for forming a conductive pattern, conductive circuit patterns, RFID tags, various sensors, MEMS structures, etc. on various resin products such as electric / electronic products and automobile parts can be formed very effectively.

 [Brief Description of Drawings]

1 is a view schematically showing a nasicon three-dimensional structure of an example of the phosphate represented by the formula (1) contained in the composition for forming a conductive pattern according to an embodiment. 2 is a view schematically showing a three-dimensional structure belonging to the ^{P 1} space group of the triclinic structure of the phosphate represented by the formula (1) contained in the composition for forming a conductive pattern according to another embodiment.

3 is a view schematically showing a three-dimensional structure belonging to the ^{P 1} space group of the triclinic structure of the phosphate represented by the formula (2) contained in the composition for forming a conductive pattern according to another embodiment. Figure 4 is a graph showing the absorbance according to the wavelength (nm) of the phosphate represented by the formula (2) of one embodiment. Absorbance is calculated by (lR% * 0.01) ² /(2ra*0.01) according to Kubelka-Munk equation, and R% is di f fuse reflectance which can be measured by Uv-Vi spectroscopy. .

5 is a view schematically showing a three-dimensional structure of Cu ₂ P ₂ 0 ₇ in the phosphate represented by Formula 3 included in the composition for forming a conductive pattern according to another embodiment.

6 is a view schematically showing a three-dimensional structure belonging to the ^{P 1} space group of the phosphate represented by the formula (4) contained in the composition for forming a conductive pattern according to another embodiment.

 FIG. 7 is a diagram schematically showing a three-dimensional structure belonging to a Pnma space group of phosphates represented by Formula 4 included in a composition for forming a conductive pattern according to another embodiment.

 8 is a diagram schematically showing the structure of a conventional electronic component substrate. 9 is a view schematically showing the structure of an electronic component substrate manufactured using the composition for forming a conductive pattern according to an embodiment of the present invention.

 10 is a view briefly showing an example of a method of forming a conductive pattern by using the composition for forming a conductive pattern according to an embodiment of the present invention.

 [Specific contents to carry out invention]

 Hereinafter, a composition for forming a conductive pattern and a resin structure having a conductive pattern formed therefrom according to a specific embodiment of the present invention will be described. According to one embodiment of the invention polymer resin; A non-conductive metal compound comprising at least one phosphate selected from the group consisting of phosphates represented by Formulas 1 to 4 below; Provides a composition for forming a conductive pattern by electromagnetic wave irradiation, including a carbide, carbon-based material, nitride-based material, metal oxide or a mixture thereof as a heat dissipation material, the metal nucleus is formed from the non-conductive metal compound by electromagnetic wave irradiation do.

 [Formula 1]

A _x B ₂ P ₃ 0 ₁₂ [Formula 2]

Cu ₃ - _y M ¹ _y P ₂ 08

 [Formula 3]

 [Formula 4]

Cu ₄ P ₂ 0 ₉

 In Formula 1, X is a free number between 0.5 and 1, A is at least one metal selected from the group consisting of Li, Na, Cu, kg and Au, B is selected from the group consisting of Sn, Ti, Zn and Hf At least one metal,

In Formula 2, y is 0 or more and less than 3, M ¹ is Ti, V, Cr, Mn,

At least one metal selected from the group consisting of Fe, Co, Ni, Y, Zn, Nb, Mo, Tc, Pd, Ag, Ta, W, Pt and Au,

In Chemical Formula 3, z is a free number less than 0 and less than 2, and M ² is at least one metal selected from the group consisting of Zn, Mg, Ca, Sr, and Ba.

 After forming a polymer resin product or a resin layer using the composition for forming a conductive pattern including the non-conductive metal compound, and irradiating electromagnetic waves such as a laser, a metal nucleus may be formed from the non-conductive metal compound. The metal nucleus may be selectively exposed in a predetermined region irradiated with electromagnetic waves to form an adhesive active surface of the polymer resin substrate surface. Subsequently, electroless plating with a plating solution containing conductive metal ions, etc., using the metal core as a seed, a conductive metal layer may be formed on an adhesive active surface including the metal core. Through this process, the conductive metal layer, that is, the fine conductive pattern may be selectively formed only on the polymer resin substrate of the predetermined region irradiated with the electromagnetic wave. Particularly, as one of the main factors in which the metal nucleus and the adhesion-activated surface are formed and thus the formation of a better conductive pattern by electromagnetic wave irradiation, the unique three-dimensional structure of the non-conductive metal compound included in the composition of one embodiment Can be mentioned. Hereinafter, the steric structure of the phosphate which can be used as the non-conductive metal compound according to the embodiment and the optical characteristics according to these structural characteristics will be described in detail.

Phosphate of the formula (1), while the P0 ₄ tetrahedral and octahedral B0 ₆ shared oxygen Depending on the position of the A metal in the three-dimensionally connected basic structure, it may have a space group on various crystal structures.

For example, the phosphate having X of Formula 1 may have a ^{R?> C} space group (nacicon stereostructure) of a trigonal structure as shown in FIG. 1.

Referring to FIG. 1, the phosphate of the nacicon structure is three-dimensionally connected while the octahedron of B0 _{6 and} the tetrahedron of P0 ₄ share oxygen (that is, the three-dimensional solid structure of the entire nacicon structure). And a metal A or ions thereof in a channel formed by the crystal lattice arrangement of the octahedron and tetrahedron.

More specifically, in the Nasicon solid structure, the channel may be formed at a position surrounded by six oxygens along the c-axis of the crystal lattice, and the position may be partially filled by the metal A or its ion. Accordingly, the metal of A may be freely present in the bondage of any crystal lattice in the three-dimensional structure, so that when the non-conductive metal compound having such a three-dimensional structure is exposed to the stimulation of electromagnetic waves of a specific wavelength, the metal of A or its subsequent release from the material It is expected to be easily separated. In a specific example, in the case of a non-conductive metal compound such as CuSn ₂ (P0 ₄ ) ₃ , it is basically chemically stable, but when exposed to electromagnetic waves such as a laser, Cu or Cu ¹⁺ may be easily separated to form a metal nucleus. It has been confirmed that this can be expected to be due to the three-dimensional structure peculiar to the above-described Nasicon solid structure. ^'

 On the other hand, the phosphate of the formula (1) having such a nasicone steric structure

The pT transition can receive a space group of triclinic structures or a Cc or C2 / c space group of a ^Λ 1 "monolithic structure. 2 is shown.

^{In the R3c} structure, the amplification of the channel formed by two P0 ₄ tetrahedrons and _four B0 ₆ octahedrons is 0 0 0. When the symmetry of the crystal structure is reduced to C2 / c, the position becomes

11 311 33 131

 --0, ---,-0, ---

⁴⁴ 442 is changed to 44 442 and element _A is located sharing ₄ oxygen Can be. However, not all A elements exist in these positions, and may exist only in some positions.

 Also, when the crystal structure becomes Cc, symmetry due to 2-fold disappears.

11 311

 — ᅳ 0,

44 442 digits, and the Ml site to share _two oxygen,

33 131

 ᅳ ᅳ 0,

The 4 ^{4 442} site may be an M2 site that shares four oxygens, such as C2 / c. In most ^P1 structures, the A element is located only in a part of the M2 site. In addition, when the A element is a transition metal element such as Cu, the oxidation number may be changed from monovalent to divalent. X in Formula 1 will have a value between 0.5 and 1. The crystal structure of the phosphate represented by Chemical Formula 1 may be determined according to the type of metal included in the phosphate and the phase transition that occurs according to the firing temperature in the synthesis of the phosphate.

In general, when fired at a high temperature of about loocrc or more to synthesize the phosphate of Formula 1, a non-conductive metal compound having a group of 8 ^{″ 3} spaces of a trigonal structure, which is a stable phase, may be obtained.

On the other hand, when firing at a low temperature of about 10Q0 ^° C or less to synthesize the phosphate of formula (1), the phosphate of formula (1) belonging to the ^ri space group of the triclinic structure is lower than the trigonal structure is obtained Phosphates of formula (1) belonging to the Cc or C2 / c space group of the monoclinic structure, which is black or black, can be obtained. However, non-conductive metal compounds having ^R3C space groups of some trigonal structures may be synthesized even when low temperature calcining is used, or ^P1 space groups or monoclinic structures of some triclinic structures when high temperature firing is used. A non-conductive metal compound having a Cc or C2 / c space group of: can be synthesized. The phosphate of formula (1) having such a ^P1 , Cc or C2 / c space group, like the phosphate of formula (1) of the nacicon structure described above, was formed by molding a polymer resin product or a resin layer using a composition for forming a conductive pattern including the same. Afterwards, when electromagnetic waves such as a laser are irradiated to a predetermined region, a metal nucleus is released from the phosphate having the above structure. Can be formed. The phosphate of Formula 1 having the ^ri , Cc or C2 / c space group is chemically stable in a general environment, but in a region exposed to electromagnetic waves of a specific wavelength, the metal or its ions present in the Si te from the material It can be easily separated. Therefore, the metal nucleus can be more easily formed by irradiation of the electromagnetic waves.

Next, the phosphate represented by Chemical Formula 2 may have a tr i cl ini c system structure having the least symmetry among 7 crystal systems. In the triclinic system, not only are all three vectors (a ≠ b ≠ c) different from each other, but also the angles formed by the vectors are different and not right angles ( _α ≠ β ≠ _γ ≠ 90). In addition, the phosphate of Chemical Formula 2 may belong to the ^ri space group. 3, the triclinic system structure of such a nonconductive metal compound is schematically shown.

Referring to FIG. 3, in the non-conductive metal compound having a triclinic structure, Cu and M ¹ may be positioned at two kinds of sites. Specifically, the non-conductive metal compound may include a Ml site in which one Cu or M ¹ is coordinated by four oxygen to form a local symmetry of a square plane or square pl anar. One Cu or M ¹ may be located at the M2 site coordinated by five oxygens to achieve local symmetry of the trigonal bipyramid. In addition, the non-conductive metal compound may include a tetrahedron of P0 ₄ in which one P is coordinated by four oxygen to form local symmetry. Such local symmetric parts may be connected in three dimensions while sharing oxygen as shown in FIG. 3 to form a triclinic system. Specifically, the non-conductive metal compound is a square planar Cu0 ₄ or M0 ₄ as shown in Figure 3; Cu0 ₅ or M0 ₅ of trigonal bipyramids; And it may have a three-dimensional structure in which the tetrahedron P0 ₄ is three-dimensionally connected while sharing oxygen.

In addition, the phosphate of Chemical Formula 2 has a low absorbance in the visible region (about 300 Hz to 700 nm) as shown in FIG. 4 (horizontal axis: wavelength (nm), vertical axis: absorbance), and in the near infrared to infrared region (about 700 nm to 3000 nm). High absorbance Causes a strong absorption in the near infrared region of the phosphate is teurigo Cu0 ₅ the forming due to the local symmetry of the day-by-pyramid (tr igonal bypyramid). For that reason, firstly, Cu ²⁺ present in the center of the trigonal ^bipyramid has a central symmetry. This is because Laporte al lowed transiton is possible in the d_orbital of Cu ^{2+ due} to its location in the non-centrosymmetric acid. Secondly, the transition between energy levels resulting from this crystal structure includes less visible light region (about 300 nm to 700 nm) and a considerable portion of near infrared to infrared region (about 700 nm to 3000 nm). Accordingly, the non-conductive metal compound has low absorbance in the visible light region and high absorbance in the near infrared to infrared region, and can easily form a metal nucleus by reacting well to the stimulation of electromagnetic waves having a near infrared wavelength while having a bright color.

 Next, the three-dimensional structure and optical properties of the phosphate represented by the formula (3) will be described. In general, the optical properties of compounds containing transition metals are related to the energy levels of d-orbitals. When the transition metal is present as a free atom, all of the d-orbitals of the transition metal have the same energy level, but in the presence of the ligand, the energy level of the d-orbital of the transition metal depends on the local symmetry of the metal atom and the ligand. Is divided into several (crystal field theory). At this time, if all of the d-orbitals of the transition metal atoms are not filled with electrons, electrons at low energy levels can be transferred to high energy levels, which is called a dd transition of a transition metal. .

Since the phosphate of Formula 3 includes Cu ²⁺ filled with a portion of the d-orbital, the phosphate of Formula 3 may exhibit optical properties due to dd transition. In particular, the transition between energy levels resulting from the structure of Chemical Formula 3 includes less visible light region (about 300 nm to 700 nm) and a substantial portion of near infrared to infrared region (about 700 nm to 3000 nm). The absorbance of the silver visible region (about 300 nm to 700 nm) is low, and the absorbance of the near infrared to infrared region (about 700 nm to 3000 nm) may exhibit high characteristics.

Specifically, the number of ligands of Cu or M ² according to M ² of Formula 3; And Cu or

The structure formed by M ² and the ligand may be modified.

For example, X in Formula 3 satisfies a condition of 0 <x <2, and M ² is at least one metal selected from the group consisting of Ca, Sr, and Ba; Or when X is 0, the phosphate of Formula 3 surrounds Cu or M ² , the central atom of local symmetry, in the form of a distorted square pyramid with five oxygen atoms distorted. It may include a structure. FIG. 5 schematically shows the structure of Cu ₂ P ₂ 0 _{7 as} an example of the phosphate salt represented by Chemical Formula 3. FIG.

As another example, when X in Formula 3 satisfies the condition of 0 <x <2 and M ² is at least one metal selected from the group consisting of Zn and Mg, the phosphate of Formula 3 is the center of local symmetry. It may include a structure surrounding the atoms Cu or M in the form of distorted octahedral six oxygen atoms.

In such structures, the d-orbital energy level of Cu ²⁺ may be formed to absorb electromagnetic waves in the near infrared region. Therefore, the phosphate of Chemical Formula 3 can easily form a metal core by electromagnetic waves in the near infrared region. In particular, Cu ²⁺ in the center of the distorted square pyramid is located at a non-centrosymmetric site, allowing Laporte allowed transition in the d_orbital of Cu ²⁺ . . As a result, in Formula 3, X is 0; Alternatively, when X satisfies the condition of 0 <x <2, but M ² is at least one metal selected from the group consisting of Ca, Sr and Ba, the phosphate of formula 3 exhibits a strong absorption band in the near infrared region to show electromagnetic waves in the near infrared region It is possible to form a metal nucleus more easily by.

 Next, the steric structure of the phosphate of Chemical Formula 4 will be described. Chemical formula

In 4 phosphate it may be used that has a three-dimensional structure belonging to the space group of the Prima triclinic crystal system (Triclinic) ^rJ structure of the space group (space group) or orthorhombic (Orthorhombic) structure. The ^P1 space group structure and the Pima space group structure according to one example of Cu ₄ P ₂ 0 ₉ are schematically shown in FIGS. 6 and 7, respectively.

Referring to FIG. 6, in Cu ₄ P ₂ 0 ₉ of Formula 4, copper ions may be located at Ml, M2, M3, and M4 sites, and copper ions located at Ml and M3 sites may be formed by five oxygens. Coordination results in local symmetry of pentaedron, and copper ions located at M2 and M4 sites are coordinated by four oxygens to achieve local symmetry of the square plane. P can then achieve local symmetry of tetrahedron with four oxygens. remind

Cu ₄ P ₂ 0 ₉ may have a three-dimensional structure in which Cu0 ₅ of the pentaheadone, Cu0 ₄ of the square plane, and P0 ₄ of the tetrahedron share oxygen and are three-dimensionally connected to each other. This steric structure may be referred to as a ^{Γ 1} space group structure.

Meanwhile, referring to FIG. 7, in Cu ₄ P ₂ 0 ₉ , copper ions may be located at Ml, M2, and M3 sites, and copper ions located at Ml, M2, and M3 sites may be coordinated by five oxygen groups to pentahead. Local symmetry of the pentahedron can be achieved. P can then achieve local symmetry of tetrahedron with four oxygens. The Cu ₄ P ₂ 0 ₉ may have a three-dimensional structure in which Cu0 ₅ of the pentaheadone and P0 ₄ of the tetrahedron share oxygen with each other and are three-dimensionally connected, and the three-dimensional structure is referred to as a Pnma space group structure. Can be. The ^{P 1} black or Pnma space group structure of the phosphate represented by Formula 4 includes the local symmetry of the pentaheadron formed by Cu0 ₅ as described above, and the local symmetry site is a site having no central symmetry (non- Because of the cent rosymmetr icsi te, the copper ions located at this site are capable of Laporte al lowed transit ion. The transition between energy levels due to this crystal structure of C114P2O9 mostly occurs in the near infrared to infrared region. Accordingly, the non-conductive metal compound may have a low absorbance in the visible light region and high absorbance in the near infrared to infrared regions, and may react with electromagnetic waves of a wavelength in the near infrared region while having a bright color, thereby forming a metal core better. .

 The phosphates of Formulas 1 to 4 have excellent compatibility with the polymer resin, and have a property of maintaining chemical conductivity by being chemically stable with respect to the solution used for the reduction or plating treatment. Therefore, in the region where electromagnetic waves are not irradiated, the non-conductive metal compound may be chemically stable while being uniformly dispersed in the polymer resin substrate, thereby exhibiting non-conductivity. From the malleable metal compound, the metal nucleus is easily formed on the principle described above, and thus a fine conductive pattern can be easily formed.

 Therefore, by using the composition of the embodiment described above, it is possible to form a fine conductive pattern in a very simplified process of irradiating electromagnetic waves, such as a laser, on a high-polymer resin substrate such as various polymer resin products or resin layers.

In addition, the non-conductive metal compound included in the composition according to one embodiment Since it shows a bright color, it is possible to stably implement a polymer resin product or a resin layer of various colors such as white or gray even with the use of relatively few color additives. For example, as a compound such as CuCr ₂ O ₄ having a spinel structure exhibits a dark black color, a composition including such a non-conductive metal compound is not suitable for implementing polymer resin products or resin layers of various colors. You may not. On the other hand, since the phosphate of Formulas 1 to 4 has a bright color, it is possible to more stably implement polymer resin products of various colors such as white or gray with the addition of less color additives. Therefore, when using the phosphate represented by the above-described three-dimensional structure of the three-dimensional structure as the non-conductive metal compound can satisfy the needs of the art to implement a variety of colors, such as various polymer resin products.

As the non-conductive metal compound included in the composition according to the embodiment, one or more black or two kinds of phosphates represented by Chemical Formulas 1 to 4 may be used. Among them, in order to form metal cores and adhesive active surfaces more easily, to provide resin products or resin layers of various colors, and to secure thermal stability through heat dissipation effect better than using heat dissipating materials alone, CuSn ₂ ( P0 ₄ ) ₃ , Cu ₃ P ₂ O ₈ , Cu ₂ P ₂ O ₇ , CU ₄ P ₂ O ₉ , and the like may be used.

 The average particle size of the non-conductive metal compound included in the composition according to the embodiment may be adjusted to about 0.01 to 6 / / / 1. Such a non-conductive metal compound exhibits excellent compatibility with the polymer resin, exhibits non-conductivity in the region where electromagnetic waves are not irradiated, and can form a fine conductive pattern evenly by selectively forming metal 에만 only in the irradiated region of electromagnetic waves.

 In the composition according to the embodiment, the non-conductive metal compound may be included in an amount of about 0.01 wt% to 10 wt% based on the total composition. According to this content range, while maintaining the basic physical properties such as the mechanical properties of the polymer resin product or the resin layer formed from the composition, it can preferably exhibit the characteristics of forming a conductive pattern in a certain region by electromagnetic wave irradiation.

On the other hand, the composition according to the embodiment may exhibit excellent thermal conductivity and thermal diffusivity, including heat radiation. Accordingly, using the composition according to the embodiment can omit the heat dissipation structure such as the existing heat dissipator black heat dissipation layer. Thereby, a simplified electronic product can be provided.

 More specifically, the conventional electronic component substrate essentially employs a heat sink 3 to prevent the temperature rise of the PCB substrate 1 as shown in FIG. 8.

 'However, after molding the polymer resin product in the shape of the conventional blanket (4) using the composition according to the embodiment, and irradiated with electromagnetic waves, such as a laser and proceeds to reduction or plating, it exhibits excellent heat dissipation characteristics and fine conductivity The electronic component board | substrate 5 in which the pattern 2 was formed can be provided. Accordingly, the composition according to the embodiment can be integrated to the existing PCB substrate 1, the heat shank 3 and the blanket (4).

The composition according to the embodiment may include carbide, carbon-based material, nitride-based material, metal oxide or a combination thereof as the heat dissipating material. More specifically, silicon carbide (SiC) or the like is included, or carbon black (carbon bl ack), carbon nanotube (carbon nanotube, CNT), graphi te, graphene (graphene) or the like as a carbon-based material These mixtures include boron nitride (BN), silicon nitride (Si ₃ B ₄ ), aluminum nitride (A1N) or a mixture thereof, or the like, or as a metal oxide, magnesium oxide (MgO). ), Aluminum oxide (A1 ₂ 0 ₃ ), beryllium oxide (BeO), zinc oxide (ZnO), or a combination thereof.

 Such a heat dissipating material is excellent in compatibility with polymer resins without affecting the formation of metal nuclei by electromagnetic wave irradiation of a non-conductive metal compound, thereby providing a resin product black resin layer having excellent heat dissipation characteristics in which a good conductive pattern is formed. Can be.

 The heat dissipating material in the composition according to the embodiment may be included in the range of about 0.01 to about 50% by weight based on the total composition to exhibit a desired level of heat dissipation characteristics. In this case, when the heat dissipation material is a carbide or carbon-based material, the content of the heat dissipation material may be adjusted to 0.01 to 20% by weight in order to maintain insulation characteristics. According to this content range, while maintaining the basic physical properties of the polymer resin product or the resin layer formed from the composition, it may preferably exhibit a certain level of heat diffusion and thermal conductivity.

On the other hand, in the composition for forming a conductive pattern of the embodiment described above, as the polymer resin any heat that can form a variety of polymer resin products or resin layers Curable resins or thermoplastic resins can be used without particular limitation. In particular, the non-conductive metal compound described above may exhibit excellent compatibility and uniform dispersibility with various polymer resins, and the composition of one embodiment may be molded into various resin products or resin layers including various polymer resins. Specific examples of such polymer resins include polyalkylene terephthalate resins such as ABS (Acrylonitile poly-butadiene styrene) resins, polybutylene terephthalate resins or polyethylene terephthalate resins, polyamide resins, polyphenylether resins, and polyphenylenes. Sulfide resins, polycarbonate resins, polypropylene resins, polyphthalamide resins, and the like. In addition, various polymer resins may be included.

 In addition, in the composition for forming a conductive pattern, the non-conductive metal compound may be included in about 0.1 to 10% by weight based on the total composition, the heat dissipating material may be included in about 1 to 50 weight ¾ of the total composition, The remaining amount of polymer resin may be included. In this case, when the heat dissipation material is a carbide and / or carbon-based material, the heat dissipation material is included in about 1 to 20% by weight based on the total composition, the remaining content may be replaced by a polymer resin.

 According to this content range, while maintaining the basic physical properties such as the mechanical properties of the polymer resin product or the resin layer formed from the composition as appropriate, it can preferably exhibit the characteristics and heat dissipation characteristics to form a conductive pattern in a certain region by electromagnetic wave irradiation.

 The conductive pattern forming composition may be used as a flame retardant, a heat stabilizer, a UV stabilizer, a lubricant, an antioxidant, an inorganic filler, a color additive, a layer reinforcing agent, and a functional reinforcing agent, in addition to the polymer resin and the predetermined non-conductive metal compound and the heat dissipating material. It may further comprise one or more additives selected from the group consisting of. By the addition of such additives, it is possible to appropriately reinforce the physical properties of the obtained resin structure by the composition of the embodiment. Among these additives, in the case of the color additive, for example, a pigment, etc., it may be included in an amount of about 0.1 to 10% by weight or about 1 to 10% by weight, to impart a desired color to the resin structure.

Representative examples of color additives such as pigments include white pigments such as ZnO, ZnS, Talc, Ti0 ₂ , Sn0 ₂ , or BaS0 ₄ . Of course, color additives such as pigments of various kinds and colors known to be usable in the composition can be used.

The flame retardant may include a phosphorus-based flame retardant and an inorganic flame retardant. More specifically, the phosphorus flame retardant may be triphenyl phosphate (tr iphenyl phosphate, TPP), trixylenyl phosphate (tr ixylenyl phosphate, TXP), tricresyl phosphate (tr i cresyl phosphate, TCP), or triisophenyl Phosphate ester flame retardants, including phosphate (tr ii sophenyl phosphate, RE0F0S); Aromatic polyphosphate-based flame retardants; Polyphosphate flame retardants; Alternatively, red phosphorus-based flame retardants may be used, and various phosphorus-based flame retardants known to be usable in the resin composition may be used without any particular limitation. In addition, the inorganic flame retardant may include aluminum hydroxide, magnesium hydroxide, zinc borate, molybdenum oxide (Mo0 ₃ ), molybdenum peroxide salt (Mo ₂ 0 ₇ ² —), chamomile-zinc-molybdate, antimony trioxide (Sb ₂ 0 ₃ ) Or antimony pentoxide (Sb ₂ 0 ₅ ) and the like. However, examples of the inorganic flame retardant are not limited thereto, and various inorganic flame retardants known to be usable in other resin compositions may be used without any particular limitation.

 In addition, in the case of a layer reinforcing agent, etc., it is included in an amount of about 1 to 12 wt. ¾, and in the case of a heat stabilizer UV stabilizer, a lubricant or an antioxidant, it is included in an amount of about 0.05 to 5 wt%, and the desired physical properties of the resin structure. It can express suitably. Meanwhile, hereinafter, a method of forming a conductive pattern by direct irradiation of electromagnetic waves on a polymer resin substrate such as a resin product or a resin layer using the composition for forming a conductive pattern according to the above-described embodiment will be described in detail. . Such a method of forming a conductive pattern may include forming the resin layer by molding the above-described composition for forming a conductive pattern into a resin product or by applying it to another product; Irradiating an electromagnetic wave to a predetermined region of the resin product or the resin layer to generate metal nuclei from the non-conductive metal compound particles; And chemically reducing or plating the region generating the metal nucleus to form a conductive metal layer.

Referring to the accompanying drawings, a method of forming the conductive pattern is described in each step as follows. For reference, in Figure 10 one of the conductive pattern forming method An example is shown by the process step by step.

 In the method for forming a conductive pattern, first, the above-described composition for forming a conductive pattern may be molded into a resin product or applied to another product to form a resin layer. A product molding method or a resin layer forming method using the phosphorus polymer resin composition may be applied without particular limitation. For example, in molding a resin product using the composition, the composition for forming the conductive pattern is extruded and engraved, and then formed into pellets or particles, and then injection molded into a desired form to produce various polymer resin products. Can be.

 The polymer resin product or the resin layer thus formed may have a form in which the specific non-conductive metal compound and the heat dissipating material described above are uniformly dispersed on the resin substrate formed from the polymer resin. In particular, since the phosphate of Chemical Formulas 1 to 4 have excellent compatibility and chemical stability with various polymer resins, the phosphate of Chemical Formulas 1 to 4 may be uniformly dispersed throughout the entire region of the resin substrate and maintained in a non-conductive state.

 After forming the polymer resin product or the resin layer, as shown in the first drawing of FIG. 10, electromagnetic waves such as a laser may be irradiated to a predetermined region of the resin product or the resin layer to form the conductive pattern. . By irradiating such electromagnetic waves, metal nuclei can be easily generated from the non-conductive metal compound (see the second drawing of FIG. 10).

 More specifically, when the metal nucleus generation step is performed by the electromagnetic wave irradiation, a portion of the non-conductive metal compound is exposed to the surface of a predetermined region of the resin product or the resin layer, and a metal nucleus is generated therefrom. It is possible to form an adhesively active surface activated to have. As the adhesion-activated surface is selectively formed only in a predetermined region irradiated with electromagnetic waves, when the reduction or plating step described below is performed, the metal nucleus and the conductive metal ions included in the adhesion-activated surface are chemically reduced, and thus the conductivity The metal layer may be selectively formed on the polymer resin substrate in the predetermined region.

On the other hand, in the above-described metal nucleation step, among the electromagnetic waves, laser electromagnetic waves in the near infrared region can be irradiated, for example, from about 100 to Laser electromagnetic waves having a wavelength of 1200 nm, or about 1060 nm to 1070 nm, or about 1064 nm may be irradiated with an average power of about 1 to 20 W, or about 3 to 10 W. As the irradiation conditions of electromagnetic waves such as lasers are controlled in this range, a metal core and an adhesive active surface including the same can be better formed from the non-conductive metal compound, thereby enabling formation of a better conductive pattern. However, depending on the specific types of the non-conductive metal compounds and the polymer resins actually used or their composition, the electromagnetic wave irradiation conditions for forming the metal nucleus may be controlled differently.

 Meanwhile, after the above-described metal nucleus generation step, as shown in the third drawing of FIG. 10, the conductive metal layer may be formed by chemically reducing or plating the region where the metal nucleus is generated. As a result of the reduction or plating step, the conductive metal layer may be selectively formed in a predetermined region where the metal nucleus and the adhesive active surface are exposed, and the chemically stable non-conductive metal compound may maintain the non-conductivity as it is. have. Accordingly, a fine conductive pattern may be selectively formed only in a predetermined region on the polymer resin substrate.

 In this reduction or plating step, the resin product or the resin layer which generated the metal nucleus may be treated with an acidic or basic solution including a reducing agent, and such a solution may be formaldehyde, hypophosphite, dimethylaminoborane (DMAB) as a reducing agent. It may include one or more selected from the group consisting of, diethylaminoborane (DEAB) and hydrazine. In another example, in the reducing or plating step, the resin product or resin layer generating the metal core may be treated with an electroless plating solution containing a reducing agent and conductive metal ions.

As the reduction or plating step proceeds, the metal silver contained in the metal core is reduced, or the conductive metal ions contained in the electroless plating solution are chemically reduced by using the seed as a seed in a region where the metal core is formed. Optionally good conductive patterns can be formed in the region. In this case, the metal nucleus and the adhesion-activated surface may form strong bonds with the chemically reduced conductive metal ions, and as a result, a conductive pattern may be more easily formed in a predetermined region. On the other hand, according to another embodiment of the invention, there is provided a resin structure having a conductive pattern obtained by the above-described composition for forming a conductive pattern and a conductive pattern forming method. Such a resin structure includes a polymer resin substrate; A non-conductive metal compound comprising at least one phosphate selected from the group consisting of phosphates represented by Formulas 1 to 4 dispersed in a polymer resin substrate; Examples of heat dissipating materials dispersed in a polymer resin substrate include carbides, carbon-based materials, nitride-based materials, metal oxides, or mixtures thereof; An adhesive active surface comprising a metal nucleus exposed to a surface of a polymer resin substrate in a predetermined region; And it may include a conductive metal layer formed on the adhesive active surface.

 In such a resin structure, a predetermined region in which the adhesive active surface and the conductive metal layer are formed may correspond to a region in which electromagnetic waves are irradiated onto the polymer resin substrate. The metal contained in the metal nucleus on the adhesion-activated surface or its ions may be derived from the non-conductive metal compound. On the other hand, the conductive metal layer may be derived from the metal contained in the non-conductive metal compound, or may be derived from the conductive metal ions contained in the electroless plating solution.

In addition, the resin structure may further include a residue derived from ^' , the non-conductive metal compound. Such a residue may have a structure * in which at least a part of the metal included in the non-conductive metal compound is released, and vacancy is formed in at least part of the site.

 The resin structure described above is a mobile phone or tablet having a conductive pattern for an antenna

Made of various resin products such as PC cases, automotive parts, or resin layers, etc.

It can be made of various resin products or resin layers having conductive patterns such as RFID tags, various sensors, or MEMS structures.

As described above, according to the embodiments of the present invention, it is a very simplified method of irradiating, reducing or plating electromagnetic waves such as a laser while showing excellent heat dissipation characteristics, and it is possible to easily and easily various resin products having various fine conductive patterns. Can be formed. Hereinafter, the operation and effects of the invention will be described in more detail with reference to specific examples. However, this is presented as an example of the invention and thus The scope of the invention is not limited in any way. Example 1 Formation of Conductive Patterns by Laser Direct Irradiation

Polybutylene terephthalate resin, a basic resin, and Cu ₃ P ₂ 0 ₈ were used as a graphi te and a non-conductive metal compound as a heat dissipating material, and heat stabilizers (IR1076, PEP36) as additives for process and stabilization. A UV stabilizer (UV329), a lubricant (EP184) and a layer reinforcement (S2001) were used together to prepare a composition for forming a conductive pattern by electromagnetic wave irradiation. Specifically, the composition was obtained by mixing 69% by weight of polybutylenecerephthalate resin, 5% by weight of a non-conductive metal compound> 15% by weight, 10% by weight of impact modifier and 1% by weight of other additives including lubricant.

The composition prepared above was extruded through an extruder at a temperature of 260 to 280 ^° C. The composition in the form of extruded pellets was injection molded into a 100 mm diameter, 2 mm thick substrate at about 260 to 270 ^° C.

 On the other hand, using the Nd-YAG laser device for the resin substrate manufactured above,

The surface was activated by irradiating a laser of 1064 nm wavelength under the conditions of 40 kHz. Then, the electroless plating process was performed on the resin structure whose surface was activated by the laser irradiation as follows.

 Plating solution was prepared using MSMID-70 provided by MS Co., Ltd. The manufacturing process is as follows. 40 ml of Cu solution (MSMID-70A), 120 ml of complexing agent (MSMID-70B), 3.5 ml of co-complexing agent (MSMID-70C), 2 ml of stabilizer (MSMID-70D) in 700 ml of deionized water The solution was prepared. 45 ml of 2¾ NaOH and 12 ml of 37% formaldehyde were added to 1 L of the prepared plating solution. The resin structure whose surface was activated with a laser was immersed in the plating solution for 3 to 5 hours, and then washed with distilled water. The resin structure irradiated with the laser formed a good conductive pattern (or plating layer) on the adhesion-activated surface containing the metal nucleus through electroless plating. Example 2 Formation of Conductive Patterns by Laser Direct Irradiation

Except for using boron nitride (BN) instead of graphite (graphi te) as a heat radiation material in Example 1, the composition for forming a conductive pattern in the same manner as in Example 1 And a resin structure having a conductive pattern was prepared therefrom. Example 3 Formation of Conductive Pattern by Laser Direct Irradiation

Except for using Cu ₄ P ₂ 0 ₉ instead of Cu ₃ P ₂ 0 ₈ as a non-conductive metal compound in Example 1 to prepare a composition for forming a conductive pattern in the same manner as in Example 1, having a conductive pattern therefrom The resin structure was prepared. Comparative Example 1: Formation of a Conductive Pattern by Laser Direct Irradiation

 Except that the heat radiation material is not added in Example 1, except that the content of the polybutylene terephthalate resin is 84% by weight, to prepare a composition for forming a conductive pattern in the same manner as in Example 1, a resin having a conductive pattern therefrom The structure was prepared. Comparative Example 2: Formation of Conductive Pattern by Laser Direct Irradiation

 Except for the addition of the non-conductive metal compound in Example 1, except that the content of the polybutylene terephthalate resin is 74% by weight, a composition for forming a conductive pattern is prepared in the same manner as in Example 1, and a conductive pattern is prepared therefrom. A resin structure having was prepared. Comparative Example 3 Formation of Conductive Pattern by Laser Direct Irradiation

Example 1 In a non as conductive metal compound Cu ₃ P ₂ 0 ₈ instead of Cu ₂ (0H) conductive pattern except that the P0 _4, and preparing the composition for conductive pattern forming in the same ⁱ way as in Example 1, and from which A resin structure having was prepared. Test Example: Evaluation of Physical Properties of Resin Structure Having Conductive Pattern

(1) The adhesion performance of the conductive patterns (or plating layers) formed on the resin structures of Examples and Comparative Examples was evaluated by a cross-cut test by the ISO 2409 standard method. In the adhesion evaluation by the ISO 2409 standard method, the cl ass 0 grade means that the peeling area of the conductive pattern is 0% of the conductive pattern area to be evaluated, and the cl ass 1 rating indicates that the peeling area of the conductive pattern is the conductive pattern area to be evaluated. 0% of It means more than 5%. The cl ass 2 grade means that the peeling area of the conductive pattern is greater than 5% and 15% or less of the conductive pattern area to be evaluated. The class 3 grade means that the peeling area of the conductive pattern is more than 15% and 35% or less of the conductive pattern area to be evaluated. c lass 4 means that the peeling area of the conductive pattern is greater than 35% and less than or equal to 65% of the conductive pattern area to be evaluated. The cl ass 5 grade means that the peeling area of the conductive pattern is greater than 65% of the conductive pattern area to be evaluated.

(2) The thermal conductivity of the resin structures of Examples and Comparative Examples was evaluated by the ASTM E1461 standard method and the test equipment used LFA447 l aser f lash (Netzsch). The specimen was placed inside the test equipment and heat was generated by using a laser pulse under the specimen. Thereafter, the thermal diffusivity was measured by measuring the temperature on the opposite side of the specimen using an IR sensor, and then thermal conductivity was calculated therefrom. (3) The heat deformation temperature of the resin structures of Examples and Comparative Examples was evaluated using a 6M-2 (Toyoseiki) test equipment. A load determined according to the size of the specimen was applied to the specimen (in this example, a load of 4.6 kgf / cm ² ), the specimen was immersed in oil, preheated for 3 to 5 minutes and the oil was heated to 120 ^° C / hour. Heated at rate. As the oil silver is raised, the specimen sags. The temperature at 0.254 mm sag was measured and defined as the heat deflection temperature.

Table 11

Referring to Table 1 above, the peeling area of the conductive patterns (black plating layer) formed according to Examples 1 to 3 and Comparative Example 1 is about the area of the conductive pattern to be tested. At 0% (IS0 cl ass 0), it was confirmed that the conductive pattern showing high adhesion to the laser irradiation area was formed satisfactorily. On the other hand, the peeling area of the conductive pattern formed according to Comparative Example 2 is greater than 65% (ISO cl ass 5) of the conductive pattern to be tested, and the peeling area of the conductive pattern formed according to Comparative Example 3 is more than 15% of the conductive pattern to be tested At 35% or less (ISO cl ass 3), it is confirmed that the adhesion of the conductive pattern to the resin structure is remarkably low compared with Examples 1 to 3.

Meanwhile, the resin structure of Comparative Example 1, in which Cu ₃ P ₂ O ₈ was added as a non-conductive metal compound but no heat-dissipating material was formed, had a good conductive pattern by electromagnetic wave irradiation, but the thermal conductivity and thermal deformation temperature of the resin were very high. The results were low. In contrast, the resin structures of Examples 1 to 3 using Cu ₃ P ₂ 0 ₈ or Cu ₄ P ₂ 0 ₉ as the non-conductive metal compound and graphi te or BN as the heat dissipating material form satisfactorily a conductive pattern by electromagnetic wave irradiation. On the other hand, it showed better thermal conductivity and increased heat deflection temperature than the resin structure of Comparative Example 2 using only a heat dissipating material. In addition, the resin structure of Comparative Example 3 to which the non-conductive metal compound and the heat dissipating material which do not belong to the non-conductive metal compound of the present invention exhibited lower thermal conductivity than the resin structure of Comparative Example 2 using only the heat dissipating material. Thus, it is confirmed that the non-conductive metal compound proposed in the present invention exhibits a more improved heat dissipation effect than the heat dissipation effect of the heat dissipation material itself while maintaining high adhesion of the conductive pattern in combination with the heat dissipation material.

 [Explanation of code]

 1 ： PCB Board

 2: conductive pattern (circuit pattern)

 3 ： heat sink

 4: Blanket

 5: Electronic component board

Claims

[Claim 1] A non-conductive metal compound comprising at least one phosphate selected from the group consisting of a polymer resin; '' A composition for forming a conductive pattern by electromagnetic radiation, including carbide, carbon-based material, nitride-based material, metal oxide, or a mixture thereof as a heat dissipation material, wherein metal nuclei are formed from the non-conductive metal compound by electromagnetic wave irradiation :  [Formula 1] A _x B ₂ P ₃ 0 ₁₂  [Formula 2]

 [Formula 3]

 [Formula 4] Cu ₄ P ₂ 0 ₉  In Formula 1, X is a free number between 0.5 and 1, A is at least one metal selected from the group consisting of Li, Na, Cu, Ag and Au, B is selected from the group consisting of Sn, Ti, Zn and Hf At least one metal, In Formula 2, y is a ratio of 0 to less than 3, M ¹ is Ti, V, Cr, Mn, Fe, Co, Ni, Y, Zn, Nb, Mo, Tc, Pd, Ag, Ta, W, Pt And at least one metal selected from the group consisting of Au, In Chemical Formula 3, z is 0 or more and less than 2, and M ² is at least one metal selected from the group consisting of Zn, Mg, Ca, Sr, and Ba. [Claim 2] R3c The composition for forming a conductive pattern according to claim 1, wherein the phosphate of Chemical Formula 1 has a space group having a trigonal structure. [Claim 3] The composition for forming a conductive pattern according to claim 1, wherein the phosphate of Chemical Formula 1 has a ^{P 1} space group having a triclinic structure or a Cc or C 2 / c space group having a monoclinic structure. [Claim 4] The composition for forming a conductive pattern according to claim 1, wherein the phosphate of Chemical Formula 2 has a ^{P 1} space group having a triclinic structure. [Claim 5] According to claim 1, wherein the phosphate of formula 3 is a structure surrounding Cu or M ² in the form of a square pyramid distorted five oxygen atoms; Or a composition for forming a conductive pattern by electromagnetic wave radiation comprising a structure surrounding Cu or M in the form of octaheadron distorted six oxygen atoms. [Claim 6] The composition for forming a conductive pattern according to claim 1, wherein the phosphate of Chemical Formula 4 has a ^{P 1} space group having a trigonal structure or a P 皿 a space group having a tetragonal structure. [Claim 7]  The composition of claim 1, wherein the non-conductive metal oxide has an average particle size of 0.01 to 6. [Claim 8] The method of claim 1, wherein the carbide comprises silicon carbide; Carbon-based materials include carbon black, carbon nanotubes, abyss, graphene or a mixture thereof; Boron nitride, silicon nitride, aluminum nitride, or a combination thereof; Or as a metal oxide, magnesium oxide, aluminum oxide, A composition for forming a conductive pattern by electromagnetic wave irradiation containing beryllium oxide, zinc oxide or a mixture thereof. [Claim 9]  The composition of claim 1, wherein the polymer resin comprises a thermosetting resin or a thermoplastic resin. [Claim 10]  According to claim 1, wherein the polymer resin is ABS (Acryloni tile polybutadiene styrene) resin, polyalkylene terephthalate resin, polyamide resin, polyphenyl ether resin, polyphenylene sulfide resin, polycarbonate resin, polypropylene A composition for forming a conductive pattern by electromagnetic wave radiation, including one or more selected from the group consisting of resins and polyphthalamide resins. [Claim 11] The method of claim 1 wherein the non-conductive metal compounds are contained as 0.1 ^'to 10% by weight of the total composition, the heat-dissipating material is contained 1 to 50% by weight of the total composition, the remaining content of the polymer resin The composition for conductive pattern formation by electromagnetic wave irradiation containing. [Claim 12]  The method according to claim 11, further comprising at least one additive selected from the group consisting of flame retardants, heat stabilizers, UV stabilizers, lubricants, antioxidants, inorganic layering agents, color additives, impact modifiers and functional reinforcing agents. A composition for forming a conductive pattern. [Claim 13]  A polymer resin substrate; Non-conductive containing at least one phosphate selected from the group consisting of phosphates represented by the following Chemical Formulas 1 to 4 dispersed on a polymer resin substrate Metal compounds;  Examples of heat dissipating materials dispersed in a polymer resin substrate include carbides, carbon-based materials, nitride-based materials, metal oxides, or mixtures thereof;  An adhesive active surface comprising a metal nucleus exposed to the surface of the polymer resin substrate in a predetermined region; And  Resin structure having a conductive pattern comprising a conductive metal layer formed on the adhesive active surface:  [Formula 1] [Formula 2] [Formula 3]

[Formula 4] In Formula 1 _x is a ratio between 0.5 to 1, A is at least one metal selected from the group consisting of Li, Na, Cu, Ag and Au, B is Sn, Ti, Zn and Hf At least one metal selected from the group consisting of: In Formula 2, y is a ratio of 0 to less than 3, M ¹ is Ti, V, Cr, Mn, Fe, Co, Ni, Y, Zn, Nb, Mo, Tc, Pd, Ag, Ta, W, Pt And at least one metal selected from the group consisting of Au, In Chemical Formula 3, z is 0 or more and less than 2, and M ² is at least one metal selected from the group consisting of Zn, Mg, Ca, Sr, and Ba. [Claim 14]  The resin structure according to claim 13, wherein the predetermined region on which the adhesion-active surface and the conductive metal layer are formed has a conductive pattern that covers the region where the electromagnetic wave is irradiated on the polymer resin substrate.