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WO2015124609A1 - Fabrication d'un composant optoélectronique - Google Patents

Fabrication d'un composant optoélectronique Download PDF

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Publication number
WO2015124609A1
WO2015124609A1 PCT/EP2015/053389 EP2015053389W WO2015124609A1 WO 2015124609 A1 WO2015124609 A1 WO 2015124609A1 EP 2015053389 W EP2015053389 W EP 2015053389W WO 2015124609 A1 WO2015124609 A1 WO 2015124609A1
Authority
WO
WIPO (PCT)
Prior art keywords
lead frame
radiation
contact
layer
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2015/053389
Other languages
German (de)
English (en)
Inventor
Tobias Gebuhr
Michael Zitzlsperger
Thomas Schwarz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2015124609A1 publication Critical patent/WO2015124609A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H10W70/093—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H10W72/874—
    • H10W90/00—
    • H10W90/736—

Definitions

  • the invention relates to a method for producing an optoelectronic component.
  • the invention further relates to an optoelectronic component.
  • Opto-electronic components for generating electromagnetic ⁇ diagrammatic radiation for example light emitting diodes (LED, Light Emitting Diode), may (with a QFN package Quad Flat No
  • Leads are realized.
  • a preforming process can be used.
  • a structured leadframe is extrusion-coated with a molding compound (molding compound) in a molding process, so that a shaped body serving as a housing is formed.
  • the molded body has recesses are on which portions of the Leiterrah ⁇ mens isolated on a front side.
  • the components manufactured in this way are relatively large. This is because that the recesses of the shaped body are formed with dimensions that are adapted to the imple ⁇ ren contacting the wire and on the height (loop height) of the bonding wires. Even if the bonding wires back ⁇ Windier (reverse) are bonded, is a loop height of, for Example at least ⁇ required.
  • the bonding wire height further causes a further optics may be arranged only in a large ⁇ SEN distance from a radiation-emitting surface or a conversion element. Another disadvantage is that the wire contacting only one after the other, ie component by component, can be performed, which is time consuming and costly.
  • the object of the present invention is to provide a solution for an improved production of an optoelectronic component.
  • a method for producing an optoelectronic component includes providing a lead frame with a radiation emitting component disposed on the lead frame.
  • the radiation-emitting component is designed to emit radiation on a radiation side facing away from the leadframe.
  • the radiation-emitting component has a contact in the region of the emission side.
  • the method further comprises forming a shaped body surrounding the lead frame and the radiation-emitting component.
  • the emission side and the contact of the radiation-emitting component are at least partially free of the shaped body. It is further provided to form a contact layer connected to the contact of the radiation-emitting component. This takes place after the formation of the shaped body.
  • the optoelectronic component manufactured according to the method may be a so-called QFN package (Quad Fiat No Leads).
  • the device may be suitable for surface mounting (SMT, Surface-Mounting Technology). ⁇
  • the molded body is formed after the lead frame is provided with the radiation emitting device disposed thereon. Compared to the conventional manufacturing method described above, therefore, there is an upside down process sequence.
  • the molded body formed from an iso ⁇ lierenden material is formed zoom reaching to the lead frame and the side of the radiation-emitting component. In this case, at least part of the emission side and the contact of the radiation-emitting component are free of the molding. To contact the
  • Contact is provided a contact layer, which is produced after the formation of the shaped body.
  • the process offers several advantages.
  • the optoelectronic component can be realized with a small size ⁇ who. This is partly because that the molded body is formed zoom reaching to the radiation-emitting element, provided at ⁇ held at this point platzeinumblede recess of the molding.
  • the small size of the optoelectronic component is further possible in that no bonding wire, but a contact ⁇ layer is connected to the contact of the radiator ⁇ mittierenden component.
  • the contact layer may be flat, and may occupy a smaller height above the radiation-emitting device than a bonding wire. Therefore, the optoelectronic component can be realized with a low Ge ⁇ yakheim. It is possible that the optoelectronic component manufactured according to the method has a height which, for example, 90 ⁇ or ⁇ is smaller than the height of a conventional device.
  • Another advantage is a high efficiency of the opto electro ⁇ African component in combination with another optical device see. Due to the contact layer is a small distance between the optical device and the emission side of the component, or according to a development of the method to a radiation side of a layer, for example a conversion layer, possible. For example, an application in which radiation emitted by the optoelectronic component is coupled into an optical waveguide is considered. Due to the small distance can be achieved that only a small proportion of emitted radiation to the side or stray radiation is lost.
  • the use of the contact layer also allows the use of conversion techniques that are not compatible with bonding wires. Thereby a cost saving is possible. This will be discussed in more detail below.
  • the method can be carried out in such a way that a coherent composite of a plurality of optoelectronic components is produced, which is subsequently separated into separate components. Due to the small size of the components, the production can be carried out inexpensively.
  • the production can be carried out inexpensively.
  • Individual steps of the method can be Runaway parallel for all components ⁇ leads. This includes the formation of contact layers of all components. Compared to a successive wire bonding this step can therefore be faster and cheaper. This is the case in particular with a high connection density or with a high number of components per composite.
  • providing the leadframe comprises structuring a metallic blank transitional layer.
  • the lead frame produced thereby can have a plurality of lead frame sections.
  • the patterning may include a front side and a rear etching the metalli ⁇ rule output layer. Instead of etching on both sides, a stamping process can also be carried out.
  • the lead frame may optionally be coated with a metallic layer. This can be done, for example, by electrochemical deposition or electroplating.
  • the shaped body is formed with a recess, over which a part of the lead frame is exposed.
  • the contact layer is formed in such a way that the contact layer is connected to the cut-out part of the leadframe. In this way, the contact of the radiation-emitting component can be connected via the contact layer to this part of the lead frame.
  • the leadframe has a first leadframe section and a second leadframe section. The radiation-emitting component is arranged on the first leadframe section.
  • the molded body is formed with a recess, over which a part of the second lead frame section is exposed on the front side.
  • the contact layer is formed such that the contact layer verbun with the second lead frame portion ⁇ is. In this embodiment, the contact of the radiation-emitting component present on the emission side and the second conductor frame section are electrically connected via the contact layer.
  • the emission side of the radiation-emitting component may be a front side of the component.
  • the component may have a front side to the opposite back side, with which the component can be arranged on the first lead frame portion at ⁇ .
  • the radiation member may have ei ⁇ NEN further contact which may be connected to the first lead frame portion in a suitable manner. In this way, it is possible to supply the radiation-emitting component via the first and second lead frame section with electrical energy for generating radiation.
  • the leadframe for each of the components can have a plurality of leadframe sections, for example, as indicated above, in each case a first and a second leadframe section. Also possible are Fully ⁇ staltitch with three leadframe sections each component, as described in more detail below.
  • the conductor frame sections of various optoelectronic components can be interconnected via suitable connection structures of the leadframe. When separating, the connection structures can be severed.
  • the lead frame portions of the Herge according to the method presented ⁇ optoelectronic component can be electrically separated from each other, and be mechanically connected via a space formed by cutting the molded body housing body.
  • the leadframe sections may be exposed at a backside of the optoelectronic device. In this way, the optoelectronic component can be soldered to a printed ⁇ te.
  • the contact layer of the optoelectronic component can be produced in a planar connection technology (PI, Planar Interconnect).
  • the contact layer may be flat or have a small thickness.
  • the contact ⁇ layer can be designed to save material.
  • Forming the contact layer may include applying an electrically conductive or metallic material.
  • the metallic material may in part to the Strahlungse ⁇ mittierende component or on the emission side at the vorlie- contact and applied to the molding.
  • the contact layer For the formation of the contact layer, different processes may be considered. It is possible to locally apply a metallic material, wherein processes such as a stencil printing process, a screen printing process, a dispensing process or a droplet-like application by means of a jetting device can be performed.
  • the material used may be in the form of a paste before ⁇ , and subsequently cured.
  • a start ⁇ layer can be initially deposited. Thereafter, a masking patterned photoresist layer may be formed on the starting layer. Subsequently, the actual electro ⁇ chemical deposition can take place.
  • the starting layer serves as a deposition electrode, on which a metallic material is applied. The deposition takes place in one or more areas (which are not masked to form multiple contact layers in parallel). Subsequently, the photoresist layer can be removed, and an etching process can be carried out in order to remove the starting layer outside the galvanic coating area (s).
  • the method comprises forming an insulating layer after forming the shaped body and before forming the contact layer.
  • the insulating layer serves to isolate a portion of the radiation-emitting device opposite the subsequently having formed ⁇ th contact layer. This applies, for example, to a side flank of the component in order to prevent a short circuit between the side flank and the contact on the emission side. avoid.
  • the insulating layer can be formed partly on the component or at the edge on the emission side of the component and on the molded body. Forming the insulating layer may include applying an insulating or dielectric material.
  • This material can be applied locally, whereby processes such as a stencil printing process, a screen printing process, a dispensing process or a droplet-shaped application can be carried out with the aid of a jetting device.
  • a photographic technique can be considered, so that the insulating layer is realized in the form ei ⁇ ner patterned photoresist layer.
  • the radiation-emitting device is sufficiently passivated ⁇ fourth, forming the insulating layer may be omitted.
  • the includes the conveniently lead frame arranged a component Strahlungse ⁇ mittierenden semiconductor chip.
  • the semiconductor chip can be a light-emitting diode chip (LED, light emitting diode) designed to generate light radiation. This may be, for example, a surface emitter, for which different types, for example, thin-film chip, UX: 3 chip (product name of OSRAM Opto Semiconductors), etc. may be considered.
  • the semiconductor chip can be designed, for example, to generate ultraviolet, red or infrared light radiation.
  • the component disposed on the lead frame provided on a Strahlungse ⁇ mittierenden semiconductor chip and a conversion layer to the radiation conversion.
  • the semiconductor chip can also be a light-emitting diode chip here.
  • the conversion layer which can be arranged on the semiconductor chip, at least part of a radiation generated primarily by the semiconductor chip can be converted, ie into at least one secondary one Radiation of another wavelength range converted ⁇ the.
  • the radiation generated in this way by or in the component can be emitted via the conversion layer present in the region of the emission side.
  • the shaped body is formed such that the Abstrahlsei ⁇ te of the radiation-emitting component and the contact at least partially free of the molded body.
  • the Formkör ⁇ per can be formed in particular such that the Ab ⁇ beam side and the contact are free or substantially free of the molding. In this way, from the component generated radiation be issued (if possible) without hindrance, and the contact layer can be reliably connected to the contact ver ⁇ prevented.
  • the radiation-emitting component is covered on the emission side to a part or a small part, for example, at the edge, with the molding. Even further inside there may be a low coverage, for example in a region adjacent to the contact or between the contact and a semiconductor layer sequence of a semiconductor chip . This can be dependent on the design and topography of the component or semiconductor chip.
  • forming the shaped body comprises performing a transfer molding process
  • the molding compound may comprise, for example, a thermoset or other material.
  • the composition may further comprise a particulate filler.
  • the shaped body can have a small thermal expansion coefficient.
  • a mold half of the transfer molding tool may be formed with a corresponding structure.
  • the transfer molding process is a film-assisted transfer molding process (FAM, Film Assisted Transfer Molding).
  • a film is used to protect and seal the radiation-emitting component Be ⁇ rich the radiation side.
  • the protective film can be arranged on a work ⁇ half of the injection-molding tool before the transfer molding process. By the film can be ensured that the emission side and the contact of the component with a high reliability free or substantially free of the molding compound and thus the molding remain.
  • the formation of the molded body it is also possible to use a further film for sealing even on a side or rear side of the leadframe facing away from the radiation-emitting component.
  • the method comprises providing a conversion layer for radiation conversion at least on the radiation-emitting component. This step can be carried out after the formation of the contact layer.
  • a conversion layer for radiation conversion at least on the radiation-emitting component.
  • This step can be carried out after the formation of the contact layer.
  • the conversion layer under ⁇ defenceliche embodiments may be considered.
  • the conversion layer can be a layer filled with radiation-converting phosphor particles or a ceramic conversion layer.
  • the formation of the conversion layer or the application of phosphor particles for forming the conversion layer can take place by processes such as sedimentation, spraying or electrophoretic deposition. It is also possible to realize the conversion layer in the form of a phosphor-filled Volumenvergusses.
  • a further possible embodiment proposes to provide the Kon ⁇ version layer on the radiation-emitting Bau ⁇ part such that the conversion layer is also located in a region above the present on the radiating side contact of the component.
  • the conversion layer can be located on the contact layer.
  • it may be considered a pre-for placing or sticking to the radiation-emitting component ⁇ down conversion layer without, for keeping the contact of the component matched recess (as is common with a ⁇ set a bonding wire) form. Therefore, the Konversi ⁇ ons slaughter can be produced with a simple shape such as a rectangular shape, realize.
  • the method comprises forming a radiation-transmissive protective layer for
  • This step can be carried out after the formation of the contact layer or after the provision of a conversion layer. Due to the protective layer, constituents such as the radiation-emitting component, the contact layer and an optional Kon ⁇ version layer can be protected from external stresses.
  • the radiation-emitting component can have a contact in the region of the emission side or front side, and a further contact on a reverse side opposite thereto.
  • the component has a first contact and a second contact in the region of the emission side. The procedural ⁇ ren is performed in this embodiment such that a first contact connected to the first contact layer and a second contact connected to the second contact layer ⁇ be formed.
  • the lead frame in turn has a first leadframe portion and a second leadframe portion ⁇ .
  • the radiation-emitting component is arranged on the first leadframe section.
  • the shaped body is formed with a first and a second recess. A part of the first Porterrahmenab ⁇ section is about the first recess, and a part of the second lead frame portion is exempted via the second recess.
  • the first and second contact layers are formed such that the first contact layer is connected to the first leadframe section and the second contact layer is connected to the second leadframe section. In this way it is possible, the radiation-emitting component over the supply first and second lead frame portion with electrical energy for generating radiation.
  • the radiation member having two contacts in the area of the emission side can be a or, for example in the form of a volume emitter, for example in the form of a Sa ⁇ phir volume emitter actualized semiconductor chip comprising such a semiconductor chip.
  • a lateral emitter may (also) occur in the case of a volume emitter.
  • a radiation-stable material for example a Silikonmateri ⁇ al, are suitable.
  • the molding compound or the silicone material can be clear or permeable to radiation. It is also a white molding composition, which may include in addition to a parti ⁇ kelförmigen reflective filler particles.
  • the radiation-emitting device having two contacts at the Be ⁇ area of the emission side may alternatively be a realized in the form of a surface emitter semiconductor chip or include such a semiconductor chip. With respect to the radiation-emitting device with two
  • first and second insulating layers may be formed before forming the first and second contact layers.
  • the lead frame comprises a first lead frame portion, a second cut autismrahmenab ⁇ and a third lead frame portion.
  • the radiation-emitting component on the first th ladder frame section arranged.
  • the shaped body is formed with a first recess and a second recess.
  • a part of the third Porterrahmenab ⁇ section is about the first recess, and a part of the second lead frame portion is exempted via the second recess.
  • the first and second contact layer are formed of the ⁇ art that the first contact layer with the drit ⁇ th lead frame portion and the second contact layer is connected to the second lead frame portion.
  • the first lead frame portion on which the animal Strahlungsemit ⁇ end member is in this case can be used as electrically iso- profiled heat sink.
  • the method can be carried out such that the optoelectronic component has a single radiation-emitting component or is implemented in the form of a single-chip component.
  • ⁇ from the optoelectronic device can comprise a plurality of radiation emitting devices or ⁇ be realized in the form of a multichip assembly.
  • different embodiments are conceivable.
  • Strahlungse ⁇ mittierende components on separate lead frame portions, or on a common leadframe section to be applied.
  • a plurality of radiation-emitting components can be electrically separated from one another, or else
  • an electrical connection between two components can be realized using a contact layer.
  • a contact layer for example, a connection between a contact of a first component in the region of the emission side and a lead frame portion on which a second construction part is arranged ⁇ be prepared.
  • an ESD protection diode Electric Discharge
  • the protective ⁇ diode may be connected in anti-parallel to the radiation-emitting component.
  • the protection diode may have a front side and a rear side contact, and may be arranged with the rear side contact on a lead frame section.
  • the molded body may be formed such that the front-side contact of the protective diode is at least partially free of the molded body. As a result, it is possible to form a contact layer connected to the front-side contact of the protective diode after the formation of the molded body.
  • an optoelectronic component is proposed.
  • the optoelectronic component is produced by carrying out the above-mentioned method or one or more of the abovementioned embodiments of the method.
  • the optoelectronic construction ⁇ element has a lead frame with a arranged on the lead frame radiation-emitting component.
  • the radiation-emitting component is designed to emit radiation on a radiation side facing away from the leadframe.
  • the radiation-emitting component has a contact in the region of the emission side.
  • Another component of the optoelectronic component is a molded body surrounding the leadframe and the radiation-emitting component. In this case, the emission side and the contact of the radiation-emitting component are at least partially free of the shaped body.
  • the optoelectronic component can be characterized by a small or flat size, high efficiency and a cost-effective distinguished favorable structure. Furthermore, the optoelectronic component with a conversion layer being formed ⁇ may be, their production is incompatible with the use of a bonding wire.
  • Figures 1 to 8 a possible process sequence for manufacturing development of an optoelectronic device comprising an on ⁇ arrange a radiation-emitting semiconductor chips on a lead frame, forming a shaped body, forming an insulating layer and a contact layer for contacting a contact of the semiconductor chips in the loading rich from its emission side, forming a conversion layer on the semiconductor chip, and applying a protective layer;
  • FIG. 9 shows a further optoelectronic component with a conversion layer applied over a large area
  • FIG. 10 shows a further optoelectronic component with a conversion foil applied over a large area
  • 11 shows a further optoelectronic component, aufwei ⁇ send a semiconductor chip with two contacts in the region of a radiation side and two contact layers connected to the contacts;
  • FIGS. 12 and 13 show a further method sequence for producing an optoelectronic component, in which, prior to the formation of a shaped body, a semiconductor chip provided with a conversion layer is provided on a lead frame;
  • FIG. 14 shows a further optoelectronic component, aufwei ⁇ send a semiconductor chip with two contacts in the region of a radiation side and two connected to the contacts Kon ⁇ tact layers.
  • FIGS. 1 to 8 show a method for producing an optoelectronic component 100 on the basis of schematic lateral sectional representations.
  • the component 100 is a surface-mountable single-chip component which realizes in the form of a QFN package is.
  • the device 100 has a semiconductor chip 120 for generating radiation.
  • a parallel production of several components 100 can be considered.
  • a ⁇ together men supplyder component composite can be manufactured, which is isolated in the devices 100 below.
  • Fol ⁇ constricting described processes can be carried out jointly for several components 100th
  • the figures may illustrate each having a portion 100 of the Vietnamesesver ⁇ bunds or the respectively present situation in the area of one of the components in this regard.
  • the structures shown in Figu ⁇ ren can often repetitive coexist in one plane.
  • a repetition grid is indicated in the figures by dashed lines 280.
  • On the lines 280 can also be a severing to separate the composite component.
  • the method provides a leadframe 110, shown in FIG.
  • the lead frame 110 includes a first lead frame portion 111 and a second Lei ⁇ terrahmenabites 112th With regard to the composite production, this structure is repeated many times, ie that for each of the components 100 to be manufactured, a pair of first and second leadframe sections 111, 112 can be provided.
  • connection structures 113 are indicated in the figures by dashed lines.
  • the connection ⁇ structures 113 may be located in the sectional plane of the figures or offset therefrom be. When cutting the component composite, the connection structures 113 of the leadframe 100 are severed. In this way it can be ⁇ aims that the lead frame sections 111, 112 at each of the isolated components 100 are electrically isolated from each other.
  • the leadframe 110 having the portions 111, 112 and the interconnect structures 113 may be formed by patterning a metallic output layer, for example a copper layer.
  • a procedure is indicated, in which the starting layer is etched both starting from a front side 115 and starting from a rear side 117 opposite thereto.
  • the characteristic rounded isotropic etching edges shown in the figures arise.
  • the etching is further carried out such that thenatidomenab ⁇ sections 111, 112 are step-shaped on the side edges and in this area edge peripheral recesses 116 have on ⁇ .
  • This structure does not permit a reliable mechanical ⁇ specific toothing of the lead frame 110 with a later he testified ⁇ shaped body 150.
  • the leadframe 110 decision by performing a galvanic waste to be provided with an additional metallic layer shown.
  • the Leiterrah ⁇ men 110 is suitable for processes such as soldering and connecting a contact layer 170 formed later.
  • the lead frame 110 is, as also shown in Figure 1, arranged with the back 117 on a film 131.
  • the film 131 may be a heat-resistant adhesive film to which the lead frame 110 is laminated.
  • the film 131 may provide more stability to the lead frame 110.
  • the lead frame portions 111, 112 covered on the rear ⁇ page 117 with the film 131 are. This proves to be advantageous with regard to the later performed forming of a shaped body 150.
  • a semiconductor chip 120 is set on each of the lead frame sections 111.
  • the semiconductor chip 120 shown in FIG. 2 may be a light-emitting diode chip designed to generate light radiation. This can be a surface emitter.
  • the semiconductor chip 120 has a front side 125 facing away from the conductor frame 110.
  • the light radiation generated in the operation of the semi ⁇ semiconductor chip 125 is delivered to the front page ⁇ 125th
  • the front side 125 can therefore also be referred to as the emission side.
  • the semiconductor chip 120 is arranged on the lead frame section 111 with a reverse side of the front side 125.
  • the semiconductor chip 120 is conventionally manufactured and has components such as a semiconductor layer sequence 122 with a radiation generation active region, not shown, an electrically conductive chip substrate 121 and two contacts via which the semiconductor chip can be supplied with electrical energy.
  • the semiconductor layer sequence 122, wel ⁇ surface in the region of the front side 125 of is the semiconductor chip 120 is disposed on the chip substrate 121st
  • the semiconductor layer sequence 122 may be formed by performing an epitaxial growth process.
  • the active zone of the half ⁇ semiconductor chip 120 may be formed, for example, for generating ultravio ⁇ letter, red or infrared light radiation.
  • the semiconductor chip 120 may be, for example, the so-called UX: 3 chip.
  • the semiconductor chip 120 In the area of the rear side, the semiconductor chip 120 a further, arranged on the chip substrate 121 contact (not shown). With the backside contact, the semiconductor chip 120 is electrically and mechanically connected to the lead frame portion 111. The connection may be made via an electrically conductive connection layer (not shown). This may be a solder layer ⁇ , a layer of an electrically conductive adhesive or a sintered layer act.
  • the provided with the semiconductor chip 120 lead frame 110 is hereinafter referred to as erläu reference to the figures 3 and 4 ⁇ tert is, a transfer molding process (transfer molding) subjected.
  • a molded body 150 surrounding the semiconductor chip 120 and the lead frame 110 is formed.
  • the transfer molding process is a folienun ⁇ -assisted transfer molding process (film Assisted Transfer mol ⁇ ding).
  • film Assisted Transfer mol ⁇ ding film Assisted Transfer mol ⁇ ding
  • another film 132 is used.
  • the sheet 132 serves to seal and the half ⁇ semiconductor chip 120 in the area of radiation face 125 to protect, so that the emission side 125 remains open and uncovered in Wesentli ⁇ chen. Therefore, this process can also be referred to as Exposed Die Molding.
  • the film 132 comprises, for example, ETFE (ethylene-tetrafluoroethylene).
  • tool halves 141, 142 of a transfer molding tool used for carrying out the transfer molding process are indicated in FIG. 3, between which the films 131, 132 and the leadframe 110 provided with the semiconductor chip 120 are arranged.
  • the tool halves 141, 142 are pressed together before the transfer molding and thereby pressed against the films 131, 132.
  • the lower mold half 141 has a ebe ⁇ ne Andschreibseite.
  • the upper die half 142 has a pressing face formed with a structure.
  • the upper mold 142 in this case is a 110 ver ⁇ adopted in the direction of the survey Leite frame 143, whereby the film is pressed at a point on the second lead frame portion 112 132nd This serves to mold body 150 in this area with a front side of the leader frame section 112 macle ⁇ ing recess 151 form (see Figure 4).
  • the upper tool half 142 in the region of the semiconductor chip 120 deviating from FIG. 3 is not flat, but also structured.
  • the tool half 142 may have a depression in the region of the semiconductor chip 120.
  • the lead frame 110 on the film 131 can be positioned on the lower die 141.
  • the other film 132 may be placed on the upper mold half 142.
  • the films 131, 132 can be locally compressed. In this way, thickness tolerances can be compensated, and an optimal seal can be provided.
  • the films 131, 132 is injected, thereby existing voids are filled in here. After curing of the molding compound, the molded body 150, as shown in Figure 4, completed.
  • the films 131, 132 can ensure that no unwanted residues of the molding compound (also referred to as flash) are formed in the region of the rear side 117 of the leadframe sections 111, 112 and in the region of the front side 125 of the semiconductor chip 120.
  • Figure 4 illustrates a process state after removal of the transfer molding tool and the two films 131, 132.
  • the molded body 150 surrounds the lead frame 110 and the semiconductor chip 120 such that the lead frame 110 and its portions 111, 112 are exposed on the back 117 that the Lead frame portion 112 on the recess 151 of the molding 150 on the front side 115 partially released is provides, and that the emission side 125 of the semiconductor chips 120 ⁇ and here, the present contact surface 123 are in ⁇ We sentlichen completely free from the molded body 150th Otherwise, the semiconductor chip 120 may be laterally surrounded by the molded body 150 laterally or side flanks 126 of the chip substrate 121 of the semiconductor chip 120 may be completely surrounded. It is possible for material of the molded body 150 to be present at the edge on the chip substrate 121 and between the semiconductor layer sequence 122 and the front-side contact 123, as indicated in FIG.
  • the mold used to form the molding 150 is the mold used to form the molding 150
  • Pressing compound may comprise a duroplastic, for example a black or white epoxy material or silicone material.
  • the molding compound may be further filled up with a parti ⁇ kelförmigen filler (not shown).
  • a parti ⁇ kelförmigen filler (not shown).
  • the Gremetic ⁇ rial may be particles of amorphous Si02 (fused silicon ca) action. Due to the filling material, the molded body 150 may have a small thermal expansion coefficient. This can be promoted by different sizes ⁇ particles, thereby providing a high packing density is possible.
  • Typi ⁇ cal maximum particle sizes may be in a range between 10 and 100 ym
  • the transfer molding process may optionally, ie despite the seal with the aid of the films 131, 132, result in the region of the front side 125 of the semiconductor chip 120 and / or in the area the back 117 of the lead frame 110 are undesirable residues of the molding material.
  • the semiconductor chip 120 this may be the case, for example, with a corresponding topography of the semiconductor chip 120.
  • residues can be removed in a subsequent purification step (deflashing).
  • all the leadframe sections 111, 112 and semiconductor chips 120 are encapsulated in the manner described above with the molding compound for forming the molded article 150.
  • an insulating layer 160 is formed which covers a front side region of the molded article 150 and also the semiconductor chip 120 at the edge of the front side 125.
  • the insulating layer 160 serves to electrically isolate a side edge 126 of the semiconductor chip 120 in the region of the front-side contact 123 from a metallic contact layer 170, which is subsequently formed to contact the contact 123 (see FIG. In this way, the risk of a short circuit between the contact 123 and the side edge 126, and thereby between different regions (p-type, n-type) of the semiconductor layer sequence 122, avoided ⁇ the.
  • the insulating layer 160 may be formed such that also the contact 123 at the edge is covered by the layer 160.
  • Forming the insulating layer 160 may include depositing an insulating or dielectric material, for example a polymeric material.
  • an insulating or dielectric material for example a polymeric material.
  • the Polymerma ⁇ TERIAL can be, for example, a silicone material han ⁇ spindles.
  • the insulating layer 160 can have a high radiation stability.
  • the insulating material may be applied locally in the region of the layer 160 to be formed by means of a suitable process. For this, processes such as a stencil printing process, a screen printing process, a dispensing process or a droplet-shaped application can be carried out with the aid of a printing device (jetting).
  • a photo technique may be considered.
  • a photoresist layer is applied over a large area and subsequently in the
  • the contact layer 170 serving as a conductor flat contact layer 170.
  • the contact layer 170 which is connected to the contact 123 of the semiconductor chip 120 and to the leadframe section 112, is in the form of a planar contact or PI contact.
  • Contact Planar interconnect Due to the recess 151 of the molded body 150 of the Porterrahmenab ⁇ section 112 can be contacted at the thus exposed portion of the same with the contact layer 170.
  • the contact 123 of the half ⁇ conductor chip 120 and the lead frame portion 112 are electrically connected together.
  • the contact layer 170 is arranged both on these two components 112, 123, as well as on the insulating layer 160 and the molded body 150.
  • Contact layer 170 may be formed such that contact layer 170, as shown in FIG. 6, starting from contact 123 extends not only up to lead frame section 112 in recess 151 of molded body 150, but additionally out of recess 151 extends to the front of the molded body 150.
  • a metallic material is applied to the contact 123, the layer 160, the molded body 150, and the lead frame portion 112.
  • a metallic paste such as a silver-containing paste in the area of film to be formed 170, which is subsequently soldhär ⁇ tet.
  • processes like a stencil printing process, a screen printing process, a dispensing process (dis pensing) or a droplet-shaped application using ei ⁇ ner printing device (jetting) are carried out.
  • a starting layer can be largely bringsschie ⁇ the.
  • the seed layer can be produced, for example, TiCu aufwei ⁇ sen, and by sputtering.
  • a patterned photoresist layer serving for masking can be formed on the starting layer.
  • the photoresist layer has an opening region exposing the starting layer, which is tuned to the contact layer 170 to be formed.
  • the actual electrochemical deposition can take place.
  • the starting layer is used as Abscheideelektro ⁇ de in which in the opening portion of the photoresist layer, a metallic material, for example copper, is brought up. Subsequently, the photoresist layer may be removed, and an etching process may be performed to remove the starting layer outside the region of the contact layer 170.
  • insulating layers 160 and on the front side contacts 123 and lead frame portions 112 connected contact layers 170 are formed for sämtli ⁇ che produced components. These processes can be carried out jointly or in parallel for all the components 100.
  • a flat conversion layer 180 placed listed on the semiconductor chip 120 or in the We ⁇ sentlichen on the semiconductor layer sequence 122nd The conversion layer 180 is configured to convert the radiation primarily generated by the semiconductor chip 120 or at least a portion thereof into one or more secondary radiations. This can be a surface conversion (CLC, chip level conversion).
  • the conversion layer 180 may be formed of different Materi ⁇ alien. Possible are, for example, inorganic conversion materials, such as YAG (yttrium aluminum garnet), LuAG (lutetium aluminum garnet) or Nit ⁇ ridmaterialien.
  • the conversion layer 180 shown in Figure 7 may be configured to play When ⁇ by applying Strahlungskonvertierenden phosphor particles.
  • processes such as sedimentation, spraying or electrophoretic deposition can be used.
  • the conversion layer 180 may be fabricated separately and deposited on the semiconductor chip 120, for example, using a radiation-permeable adhesive layer (not shown) are attached.
  • the conversion layer 180 may be, for example, a silicone layer filled with phosphor particles or a ceramic conversion layer.
  • the conversion layer 180 for example in the form of a volume encapsulation.
  • a potting compound filled with phosphor particles for example of silicone, can be used.
  • a radiation-permeable protective layer 190 is further formed, as shown in FIG.
  • the protective layer 190 serves to front surface sealing, thereby protecting the front otherwise exposed components such as the half- ⁇ semiconductor chip 120 or is present thereon conversion ⁇ layer 180 and the contact layer 170 from external DEMANDS ⁇ cations (for example, moisture, scratching, etc.) can be.
  • the protective layer 190 can be applied over a large area to the molded body 150, the semiconductor chip 120 and the layers 160, 170, 180.
  • the protective layer 190 comprises, for example, a silicone material.
  • the Bauelementver ⁇ bund can be severed at the dividing lines 280, whereby isolated components 100 are formed.
  • the severed molded body 150 forms a corre sponding ⁇ housing body in each component 100.
  • the optoelectronic construction ⁇ element 100 prepared according to the method is for surface mount or surface mount suited.
  • Soldering with the back exposed Porterrahmenab ⁇ sections 111, 112 are arranged on pads of a circuit board, not shown. About the ladder frame sections 111, 112 can be supplied to the device 100 and thus the semi ⁇ conductor chip 120 electrical energy for generating radiation. As stated above, the primary radiation of the semiconductor chip 120 may be at least partially converted by means of the conversion layer 180. Via the Kon ⁇ version layer 180, the converted radiation, as well as an optionally present unconverted radiation component, are delivered.
  • the optoelectronic component 100 can be distinguished by advantages such as a small size.
  • the molded body 150 laterally toward the semiconductor chip 120, instead of forming the molded body 150 with a chip-receiving recess for the semiconductor chip 150, as in a conventional manufacturing method.
  • the flat contact layer 170 which in comparison with a bonding wire, a ⁇ we sentlich claimed smaller extent or height, Untitled beneficiaries ⁇ a small, flat design of the optoelectronic construction elements 100th
  • the device 100 with another, not shown, optical device, wherein a small distance between the optical device and the conversion layer 180 can be provided.
  • the optical device may be, for example, an optical fiber. Due to the small distance can be achieved that as much radiation is coupled into the light guide, and only a small proportion of a laterally emitted scattered radiation is lost.
  • a modification is, for example, to perform the patterning of a metallic output layer for forming the lead frame 110 not by etching, but by another process, for example, a punching process. It is also possible to omit the film 131. If the leadframe 110 has residues of the molding compound on the rear side 117 after the transfer molding process, these can be removed in a cleaning step. It is also possible to omit the insulating
  • an optically reflective layer on the front surface after forming the contact layer 170 (not shown).
  • This layer can be produced, for example, by applying silver.
  • the reflective layer may, apart from the radiation face 125 and the semiconductor layer sequence 122 of the half ⁇ semiconductor chip 120 are formed on the entire front surface.
  • the formation of the reflective layer may be similar to the contact layer 170 (ie, forming a seed layer, photo technique, electrochemical deposition, etching). In a galvanic deposition of silver and the back side 117 of the printed circuit ⁇ frame 110 may optionally be coated with.
  • the formation of the reflective layer can also take place after the formation of the conversion layer 180, wherein the conversion layer 180 is kept free in this case.
  • the formation of the contact layer 170 allows the use of conversion techniques, which can not be realized in the presence of a bonding wire. It is possible to provide a conversion layer which is different from the conversion layer 180 of Figures 7, 8 in a region above the front-side contact 123 and on the contact layer ⁇ 170th
  • the conversion layer may be provided 181 for sämtli ⁇ surface of the component 101 and are arranged on the composite comprising the chip 120, the molded body 150 and the layers 160, 170th In the subsequent separating the conversion layer 181 can be cut accordingly so that each of the devices 101 has its own club ⁇ isolated conversion layer 181st
  • a smaller conversion layer 184 can also be used, as is also indicated in FIG.
  • the conversion layer 184 can be manufactured separately, and, for example, be a filled with phosphor particles silicone layer or a kera ⁇ mix conversion layer.
  • the conversion layer can (only usable in this embodiment in the area of the semiconductor chip 120) to ⁇ ordered or using the 184 th ⁇ Components such as the semiconductor chip 120 and the contact layer 170 Connecting layer 191 are attached.
  • the conversion ⁇ layer 184 an easily producible shape, for example, have a rectangular shape in plan view. As indicated in FIG. 9 with the dashed lines, the conversion layer 184 may have lateral dimensions which correspond to those of the semiconductor chip 120.
  • Figure 10 is indicated, with the contact layer 170 ver ⁇ provided recess 151 of the molding 150 are provided with a filling 192 ⁇ layer to provide a flat surface are available in this area.
  • the conversion film 182 can also be provided on all components 102, and severed accordingly when singulated.
  • FIG. 11 shows a further optoelectronic component 103 for illustrating a further possible modification.
  • the component 103 has a radiation-emitting semiconductor chip 220, which is formed with two planar contacts 223, 224 in the region of the front or emission side 125 of the semiconductor chip 220. These are also referred to below as first contact 223 and second contact 224.
  • the semiconductor chip 220 has a chip substrate 221 and a semiconductor layer sequence 222 arranged on the chip substrate 221 and having an active zone for generating radiation in the region of the front side 125.
  • the semiconductor layer sequence 222 is step-shaped.
  • the two contacts 223, 224 are arranged on the semiconductor layer sequence 222.
  • the semiconductor chip 220 may be a volume emitter in which the chip substrate 221 is transmissive to radiation.
  • the chip substrate 221 may be formed of sapphire, for example.
  • the semiconductor chip 220 may also be a surface emitter.
  • the chip substrate 221 can not be, radiation, ⁇ permeable.
  • the semiconductor chip 220 with the back side or with the chip substrate 221 is arranged on the leadframe section 111.
  • An attachment can be made via an adhesive layer (not shown).
  • the molded body 150 is referred to so he ⁇ convinced that the emission side 125 and the contacts 223, 224 of the semiconductor chip 220 are substantially free from the mold 150th Otherwise, the semiconductor chip 220 is laterally completely surrounded by the molded body 150.
  • a film-assisted transfer molding process, and optionally a step for removing undesired residues of the molding compound used are carried out.
  • the molded body 150 is fer ⁇ ner generated such that the molded body 150, a first, the lead frame portion 111 on the front partially exposing recess 251 and a second, the lead frame portion 112 on the front partially exposing recess 252 has.
  • the first recess 251 is located laterally next to the
  • the contact layer 271 is disposed on the contact 223, the lead frame portion 111, on the insulating layer 261 and the molded body 150.
  • the other contact layer 272 is arranged on the contact 224, thenatidomenab ⁇ section 112, the insulating layer 262 and the molded body 150.
  • the semiconductor chip 220 is implemented as a volume emitter, radiation can be emitted not only on the front side 125 but also laterally over the chip substrate 221 or the side edges 126. Because of this property, it can be provided to use a molding compound made of a radiation-stable material coordinated therewith to form the shaped body 150 of the component 103.
  • a silicone material may be considered.
  • the molding composition may also be highly filled with a particulate filler in order to provide a small thermal expansion coefficient.
  • it can be provided to form the shaped body 150 in white, in that the molding compound additionally has reflective particles, for example of TiO 2.
  • the molding compound additionally has reflective particles, for example of TiO 2.
  • the reflective particles may have an average size (d50 value) in a range below 500 nm.
  • Another variant is a converting molding compound, so that the molding 150 can effect a radiation conversion.
  • a converting molding compound has additional phosphor particles. Possible are, for example, organic
  • Another embodiment is a clear or radiation-permeable molding compound, which may comprise only a silicone material.
  • a conversion layer 185 is arranged for Strah ⁇ lung conversion on the semiconductor chip 120 and on the semiconductor layer sequence 122 before performing the transfer-molding process.
  • the conversion layer 185 may ⁇ as the conversion layer described above may be formed 180th First, the semiconductor chip 120 may be arranged on the leadframe 110, and subsequently the conversion layer 185 may be provided or applied to the semiconductor chip 120.
  • the conversion layer 185 is located in front of the radiation-emitting component in the area of the emission side 125 of the ⁇ comprise the chip 120 and the conversion layer 185th As shown in FIG. 12, in this variant of the method for the transfer molding process, the emission side 125 is also sealed with the aid of the film 132 so that the emission side 125 is substantially free of the molded article 150.
  • FIG. 14 shows a further optoelectronic component 105 for illustrating a further possible variant.
  • the device 105 is a modification of the device 103 of Figure 11. Again, the device 105 has the above- ⁇ be written radiation-emitting semiconductor chip 220 with the two contacts 223, 224 in the area of the front or emission side 125.
  • the injection-molding tool used or its upper tool half has corresponding elevations for this purpose.
  • the formation of the layers 261, 262, 271, 272 can be performed as stated above. This also applies to other processes such as the formation of a conversion layer 180 on the semiconductor chip 220 or on its semiconductor layer sequence 222, and the formation of a protective layer 190 for surface sealing.
  • the semiconductor chip 220 can again be realized as a volume emitter, or alternatively as a surface emitter.
  • the above-mentioned embodiments for the shaped body 150 for example, use of a radiation-stable material, a white or converting molding compound, etc. may be considered.
  • the lead frame 110 can be provided with three lead frame sections 111, 112, 114 for each component 105.
  • the optoelectronic component 105 manufactured in this way is, like the other components 100, 101, 102, 103, 104, suitable for SMD or surface mounting.
  • the component 105 with the rear exposed Lei ⁇ terrahmenabêten 111, 112, 114 are arranged on pads of a printed circuit board, not shown. On the Lei ⁇ terrahmenabête 112, 114, the device 105 can see electrical energy to be supplied.
  • the lead frame portion 111 is placed on which the semiconductor chip 220 may serve as an isolated heat sink for dissipating heat from the semi-conductor chip ⁇ 220th
  • the modifications shown in ⁇ above such as the omission of layers can in the same way, the provision of simple and large-scale conversion elements (and thus above the contacts 223, 224 and on the contact layers 271, 272), etc. are used.
  • a semiconductor chip may be mounted not only on a lead frame portion but also on two or more lead frame portions.
  • Such a configuration can be, for example, with reference to the examples shown in Figures 8, 9, 10, 11, 13, 14
  • Anord ⁇ voltages realize characterized by the associated component composite by a corresponding setting of dividing lines in devices having a plurality of (for example two ) Semiconductor chips 120, 220 is singulated.
  • Substituted ⁇ staltungen are possible, in which a plurality of semiconductor chips arranged on a common leadframe section.
  • a plurality of semiconductor chips of a multi-chip component can also be connected to one another electrically.
  • an electrical connection between two semiconductor chips can be realized using a contact layer.
  • the contact layer may be connected to a front-side contact of a semiconductor chip, and to a leadframe section on which a further semiconductor chip is arranged.
  • components which have a further electronic device electrically connected to a semiconductor chip for example an ESD protection diode.
  • the protection diode may be connected in anti-parallel to the semiconductor chip.
  • the protection diode may have a front and a rear side contact, and may be arranged with the rear side contact on a lead frame section ⁇ .
  • the shaped body can be designed in a coordinated manner such that the front-side contact of the protective diode is at least partially free of the shaped body. In this way, connected to the front side contact of the protective diode ⁇ contact layer can be formed.

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Abstract

L'invention concerne un procédé de fabrication d'un composant optoélectronique. Le procédé comprend la préparation d'une grille de connexion dotée d'un composant émettant un rayonnement disposé sur la grille de connexion. Le composant émettant un rayonnement est adapté pour émettre un rayonnement sur une face d'émission située à l'opposé de la grille de connexion et il comporte un contact dans la zone de ladite face d'émission. Le procédé comprend en outre la réalisation d'un moulage qui entoure la grille de connexion et le composant émettant un rayonnement. La face d'émission et le contact du composant émettant un rayonnement sont au moins en partie dépourvus de ce moulage. Le procédé comprend également la formation d'une couche de contact, reliée au contact du composant émettant un rayonnement, après la réalisation du moulage. L'invention concerne en outre un composant optoélectronique.
PCT/EP2015/053389 2014-02-20 2015-02-18 Fabrication d'un composant optoélectronique Ceased WO2015124609A1 (fr)

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DE102014102184.3A DE102014102184A1 (de) 2014-02-20 2014-02-20 Herstellung eines optoelektronischen Bauelements

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