WO2015178687A1 - Substrate processing device and substrate processing method - Google Patents

Abstract

According to an embodiment of the present invention, a substrate processing device comprises: a chamber for transferring a substrate through a passage formed on one side thereof, the chamber providing an internal space, in which processes related to the substrate are conducted, and the chamber having a supply port formed on the opposite side to the passage so as to supply gas towards the substrate; an auxiliary susceptor, which is installed in the internal space, which has a shape corresponding to that of the internal space, and which has an opening formed therein; and a main susceptor, which is inserted/installed in the opening, which can rotate while the substrate is placed thereon, and which heats the substrate.

Description

Substrate Processing Equipment and Substrate Processing Method

The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, an auxiliary susceptor installed in a rectangular parallelepiped inner space formed inside a chamber and a main susceptor rotatably inserted into an opening of the auxiliary susceptor. It relates to a substrate processing apparatus provided and a substrate processing method using the same.

In general, efforts have been made to improve a device or a process for forming a high quality thin film on a semiconductor substrate in the manufacture of a semiconductor device, and several methods have been used to form a thin film using the surface reaction of the semiconductor substrate. .

These methods include vacuum evaporation deposition, molecular beam epitaxy (MBE), low-pressure chemical vapor deposition, organic metal chemical vapor deposition, plasma Chemical Vapor Deposition (CVD), including Plasma-enhanced Chemical Vapor Deposition, and Atomic Layer Epitaxy (ALE).

Among these, atomic layer crystal growth (ALE) has been extensively studied in semiconductor deposition and inorganic electroluminescent display devices, and recently, atomic layer deposition (ALD) is used to deposit various material layers. It is becoming.

Atomic Layer Deposition (ALD) is a method of depositing a thin film on the surface of a substrate by supplying two or more reaction source gases sequentially and discontinuously with each other on a semiconductor substrate. The thin film is grown in layers, and this is repeatedly performed to form a thin film of a desired thickness.

Conventional substrate processing apparatus is designed to form a thin film by supplying the reaction gases at the same time to form a thin film by supplying the reaction gas discontinuously, or through a purge so as not to cause a gas phase reaction in the reactor sequentially supplied reaction gases It was unsuitable for the method of removing and reacting. In addition, a deposition apparatus in which a gas is supplied on a semiconductor substrate in a top to bottom direction generally uses a shower head to supply a uniform reactant on the substrate. However, such a structure complicates the flow of the process gas and requires a large sized reactor, so that it is difficult to quickly switch the supply of the reactor gas.

An object of the present invention is to provide a substrate processing apparatus and substrate processing method for improving the process uniformity and productivity of the substrate.

Another object of the present invention is to control the deposition thickness by adjusting the flow rate of the gas supplied on the substrate placed on the rotatable main susceptor.

Still other objects of the present invention will become more apparent from the following detailed description and drawings.

According to one embodiment of the invention, the substrate processing apparatus, the substrate is transferred through a passage formed on one side, providing a supply space for providing an internal space where the process is performed to the substrate, and the supply port for supplying gas toward the substrate A chamber formed on the opposite side of the passage; An auxiliary susceptor installed in the inner space and having a shape corresponding to the inner space and having an opening formed therein; And a main susceptor inserted into the opening and rotatable in a state where the substrate is placed, and heating the substrate.

The substrate processing apparatus includes a rotation shaft supporting the main susceptor to be rotatable; A drive motor for driving the rotating shaft; A gas supply line connected to the supply port to supply the gas to the substrate; An on / off valve installed on the gas supply line to open and close the gas; And a controller connected to the driving motor and the on / off valve, respectively, the controller capable of controlling the driving motor and the on / off valve, respectively, wherein the controller opens the on / off valve to supply the gas, and the supply of the gas is performed. After the completion of the on-off valve is closed to drive the drive motor may rotate the main susceptor by a predetermined angle.

The gas supply line, a process gas line for supplying a process gas to the internal space; A purge gas line for supplying purge gas to the internal space; And a source gas line for supplying a source gas in the internal space, wherein the open / close valve includes: a first open / close valve installed on the process gas line to open and close the process gas line; A second on / off valve installed on the purge gas line to open and close the purge gas line; And a third open / close valve installed on the source gas line to open and close the source gas line, wherein the controller opens the first open / close valve in a state where the second and third open / close valves are closed. After supplying gas, and supplying the process gas is completed, the second on-off valve is opened in the state in which the first and third on-off valves are closed to supply the purge gas, and after the supply of the purge gas is completed, The third on-off valve is opened to supply the source gas by opening the third on-off valve, and the driving is performed when the first to third on / off valves are closed after the supply of the source gas is completed. The main susceptor may be rotated by a predetermined angle by driving a motor.

The substrate processing apparatus includes an antenna installed on an upper portion of the main susceptor to generate a plasma atmosphere in the internal space; And supplying a high frequency current to the antenna and being connected to the controller and controlled by the controller, wherein the controller can supply current to the antenna through the power while the source gas is supplied.

A diffusion having a plurality of diffusion holes positioned at an outlet side of the supply port to partition the supply port and the internal space and communicating the supply port and the internal space to diffuse the gas supplied through the supply port; absence; And a lifting member capable of elevating the diffusion member, wherein the diffusion member has a central diffusion member corresponding to a central portion of the inner space and side diffusion members installed at both sides of the central diffusion member. A central elevating member capable of elevating the central diffusion member and a side elevating member capable of elevating the side diffusion member may be provided.

The opening may be eccentrically disposed about the susceptor.

According to one embodiment of the invention, the substrate processing method, in the method for processing the substrate provided into the chamber by supplying one or more gases into the interior of the chamber having a rectangular parallelepiped-shaped space, the auxiliary installed in the interior space After installing the main susceptor rotatable separately from the auxiliary susceptor on the opening of the susceptor and supplying the gas with the substrate placed on top of the main susceptor, when the supply of the gas is completed, the gas The substrate is rotated by a predetermined angle by the rotation of the main susceptor in a state in which the supply of the substrate is stopped.

In the substrate processing method, a diffusion member that is capable of partitioning the supply port and the inside of the chamber is installed at an outlet side of a supply port formed at one side of the chamber, and the central diffusion member positioned at a center of the diffusion members is lowered to provide the substrate. A space communicating with the inside of the chamber and the supply port at an upper portion of the central diffusion member, and partitioning the inside of the chamber and the supply port through side diffusion members provided on both sides of the central diffusion member among the diffusion members; The gas may be supplied through the space and the diffusion holes by communicating the inside of the chamber and the supply port through the diffusion holes of the side diffusion member.

The method of supplying gas may include supplying a process gas; Stopping supply of the process gas and supplying a purge gas to purge the inside of the chamber; Discontinuing the supply of the purge gas may include supplying a source gas.

The method of supplying the gas may further include generating a plasma atmosphere inside the chamber while the source gas is supplied.

The method of supplying the gas may further include stopping supply of the source gas and supplying the purge gas to purge the inside of the chamber.

According to an embodiment of the present invention, the substrate may be rotated by using a main susceptor inserted into an opening formed in an inner surface of the auxiliary susceptor and rotatable separately from the auxiliary susceptor. In addition, it is possible to diffuse the gas supplied to the opposite side of the passage through which the substrate is introduced, and the flow rate of the gas supplied on the substrate through the exhaust hole having a specific shape or a diffusion member which is divided into a plurality in the longitudinal direction and each can be lifted separately I can regulate it. Therefore, the operator can easily adjust the deposition thickness and thickness distribution on the substrate, thereby improving the quality and productivity of the substrate.

1 is a view schematically showing a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 2 is a view showing the substrate processing apparatus shown in FIG. 1.

3 is an exploded perspective view of the substrate processing apparatus shown in FIG. 2.

4 and 5 are views showing the standby position and the process position of the exhaust member shown in FIG.

FIG. 6 is a diagram illustrating a heating area and a preheating area of the susceptor shown in FIG. 2.

FIG. 7 is a modification of the heating zone and the preheating zone shown in FIG. 6.

8 and 9 are views showing a gas flow state of the substrate processing apparatus shown in FIG. 2.

10 and 11 are exemplary views showing a process procedure of the substrate processing apparatus shown in FIG. 2.

12 to 14 are photographs showing the thickness distribution for Table 1.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings 1 to 14 to help understand the present invention. The embodiments described below will be described based on the embodiments best suited for understanding the technical features of the present invention, and the technical features of the present invention are not limited by the described embodiments. Illustrates that the present invention can be implemented as in the following embodiments.

Accordingly, the present invention may be modified in various ways within the technical scope of the present invention through the embodiments described below, and such modified embodiments fall within the technical scope of the present invention. And, in order to help the understanding of the embodiments described below, in the reference numerals described in the accompanying drawings, among the components that will have the same function in each embodiment, the related components are denoted by the same or extension numbers. Meanwhile, hereinafter, the substrate W will be described as an example. However, the present invention can be applied to various workpieces.

1 is a view schematically showing a semiconductor manufacturing apparatus according to an embodiment of the present invention. As shown in FIG. 1, a semiconductor manufacturing facility 100 generally includes a process facility 120 and an equipment front end module 110 (EFEM). The Seonbi front end module 110 is mounted to the front of the process facility 120 to transfer the substrate (W) between the container and the process facility containing the substrate (W).

The substrate W is subjected to a predetermined process in the process facility 120. The process facility 120 may include a transfer chamber 130, a load lock chamber 140, and a plurality of substrate processing apparatuses 10 performing the process. The transfer chamber 130 has a generally polygonal shape when viewed from the top, and the load lock chamber 140 and the substrate processing apparatus 10 are respectively installed on the side surfaces of the transfer chamber 130. The transfer chamber 130 may have a quadrangular shape, and two substrate processing apparatuses 10 may be disposed on side surfaces of the transfer chamber 130.

A gate valve (not shown) may be installed between the load lock chamber 140 and the transfer chamber 130, and the load lock chamber 140 and the facility front end module 110, and the transfer chamber 130 may be a substrate handler. (135) (transfer robot). The substrate handler 135 transfers the substrate W between the load lock chamber 140 and the substrate processing apparatuses 10. For example, the substrate handler 135 provided in the transfer chamber 130 simultaneously supplies the substrate W to the substrate processing apparatus 10 disposed on the side of the transfer chamber 130 through the first and second blades, respectively. Can be loaded

FIG. 2 is a view showing the substrate processing apparatus shown in FIG. 1, and FIG. 3 is an exploded perspective view of the substrate processing apparatus shown in FIG. As shown in FIG. 2 and FIG. 3, the chamber 20 may transfer the substrate W through a passage 22 formed at one side thereof to perform a process on the substrate W. As shown in FIG. The chamber 20 has an open top, and the chamber cover 12 is installed in the open top of the chamber 20. The chamber cover 12 has a first installation groove 13 formed on an inner surface thereof, and the insulator 15 is inserted into the first installation groove 13. The insulator 15 has a second installation groove 16 formed on the inner surface thereof, and a top electrorod 18 is installed in the second installation groove 16 to generate plasma in the internal space 3 of the chamber 20. have. The top elector 18 may be connected to the RF power source 19 to form a plasma atmosphere in the interior space of the chamber.

The lower surface of the top elector 18 is parallel to the upper surface of the auxiliary susceptor 30, and an antenna 17 is installed therein to supply a high frequency current from the RF power source 19. The open upper portion of the chamber 20 may be closed by the chamber cover 12, the insulator 15, and the top elector 18 to form the internal space 3, and the chamber cover 12 may include the chamber 20. ) And hinged to open the upper portion of the chamber 20 when the chamber 20 is repaired.

The chamber 20 has an internal space 3 in which a process is performed on the substrate W, and the internal space 3 may have a rectangular parallelepiped shape. The auxiliary susceptor 30 may be installed in the internal space 3, and the auxiliary susceptor 30 may have a rectangular parallelepiped shape corresponding to the internal space 3. The auxiliary susceptor 30 has an opening 36 which is eccentrically disposed so as to be close to the passage, and the main susceptor 80 may be inserted into the opening 36.

The main susceptor 80 is disposed below the substrate W to heat the substrate W loaded thereon, and may have a shape corresponding to the substrate W. A mounting groove 31 in which the substrate W is loaded may be formed at an upper portion of the main susceptor 30, and the substrate W may be loaded into the mounting groove 31 by the lift pin 32. Can be. The lower portion of the main susceptor 80 is connected to a rotating shaft 85 for rotating the main susceptor 80 in a state supporting the main susceptor 80. The rotating shaft 85 is connected to the driving motor 88 for rotating the rotating shaft 85 so that the rotating shaft 85 and the main susceptor 80 may rotate together by the driving force of the driving motor 88. The main susceptor 80 is installed on the heating plate 81 and the heating plate 81 having the heating wire 84 therein to uniformly transfer heat generated from the heating plate 81 to the substrate W. In order to provide a diffusion plate 83 can be provided.

On the other hand, the auxiliary susceptor 30 may be a material smaller than the thermal expansion coefficient of the main susceptor 80. For example, the auxiliary susceptor 30 may be AlN (aluminum nitride: thermal expansion coefficient = 4.5 ⁻⁶ / ° C.), and the main susceptor 80 may be Al (aluminum: thermal expansion coefficient = 23.8 ⁻⁶ / ° C.). Can be. Therefore, the preheating region 39 of the auxiliary susceptor 30, which will be described later, is damaged and processed by thermal expansion due to heating the substrate W at a temperature higher than the heating region 38 formed by the main susceptor 80. It is possible to prevent the generation of impurities that occur during the process.

One or more supply ports 25 are formed on the opposite side of the passage 22, and the process gas may be supplied into the chamber 20 through the supply ports 25. The gas supply line 70 may be connected to the supply port 25 to supply gas to the substrate (W). The gas supply line 70 may be connected to a plurality of branched gas supply lines, and may supply respective gases to the inside of the chamber 20 through the branched gas lines.

For example, the gas supply line 70 may include a process gas line 71 for supplying a process gas, a purge gas line 74 for supplying a purge gas, and a source gas line 77 for supplying a plasma source gas. The first to third on-off valves 72, 75, and 78 may be installed on the gas lines 71, 74, and 77, respectively, to adjust and open / close the flow rates of the process gas, purge gas, and source gas. .

The controller 90 may be connected to the first to third on / off valves 72, 75, 78 and the driving motor 88 for driving the rotation shaft 85, and the controller 90 may include the first to third on / off valves ( 72, 75, 78 may be controlled to supply each gas sequentially or discontinuously according to a predetermined process cycle in the internal space 3 of the chamber 20. The main susceptor may be driven by driving the driving motor 88. 80 can be rotated. In addition, the controller 90 may be connected to the RF power source 19, and when the plasma source gas is supplied into the chamber 20, the controller 90 may control the RF power source 19 to form a plasma atmosphere.

The diffusion member 40 is installed between the susceptor 30 and the inner wall of the chamber 20, and is disposed in front of the supply port 25 to spread the process gas supplied through the supply port 25. It has holes 45. The diffusion member 40 includes a diffusion body 42 and a diffusion plate 44, and the diffusion body 42 is filled in the spaced space between the susceptor 30 and the inner wall of the chamber 20 to susceptor 30. ) And the inner wall of the chamber 20. The diffusion plate 44 protrudes from the upper surface of the diffusion body 42 and contacts the lower surface of the insulator 15. The diffusion hole 45 is formed in the diffusion plate 44.

The diffusion member 40 may be divided into a plurality of portions in the longitudinal direction (or a direction substantially perpendicular to the moving direction of the process gas). A first cylinder rod 47 ′ may be connected to a lower portion of the central diffusion body 42 ′ positioned in the center portion, and the first cylinder rod 47 ′ may be connected to a first cylinder 48 ′ so that the first cylinder 48 may be connected to the first cylinder rod 47 ′. By driving '), the central diffusion body 42' positioned at the center portion can be elevated. On the other hand, the side diffusion body 42 "located on both sides is also connected to the cylinder rod 47" and the cylinder 48 ", respectively, can be lifted separately.

In addition, at least one exhaust port 28 is formed on the opposite side of the supply port 25 to exhaust the unreacted gas, the reaction by-products, etc. that have passed through the substrate W. The exhaust member 50 is installed between the susceptor 30 and the inner wall of the chamber 20 in which the passage 22 is formed, and is capable of elevating and maintaining the flow flow of the process gas that has passed through the substrate W so as to be exhaustable. A plurality of exhaust holes 55 are formed. The diffusion member 40 and the exhaust member 50 may have a symmetrical shape, and the diffusion holes 45 and the exhaust holes 55 may be formed in parallel with each other.

The exhaust member 50 includes an exhaust body 52 and an exhaust plate 54. The exhaust body 52 is installed in a spaced space between the susceptor 30 and the inner wall of the chamber 20. It is spaced apart from the inner wall of the chamber 20 in contact with the side of the 30. The inlet side (or top) of the exhaust port 28 is located on the bottom surface of the separation space formed between the exhaust body 42 and the inner wall of the chamber 20.

For example, the second cylinder rod 57 is connected to the lower portion of the exhaust member 50, and the second cylinder rod 57 is lifted by the second cylinder 58 to be elevated together with the exhaust member 50. Can be. The exhaust member 50 and the diffusion member 40 have a symmetrical structure, and a plurality of exhaust holes 55 and the diffusion holes 45 are formed at predetermined intervals on the exhaust plate 54 and the diffusion plate 44 at predetermined intervals. do. The exhaust holes 55 and the diffusion holes 45 may have a circular or long hole shape.

The diffusion member 40 and the exhaust member 50 are filled in the space between the auxiliary susceptor 30 and the inner wall of the chamber 20, respectively, and the chamber cover 12, the insulator 15, and the top electrolytic device are installed at the top. The upper part of the chamber 20 is closed by the rod 18 to partition the internal space 3 of the chamber 20 to form a reaction space 5 in which the process gas and the substrate W react.

At this time, the diffusion member 40 and the exhaust member 50 is disposed perpendicular to the inner wall of the adjacent chamber 20, the reaction space (5) because the inner wall of the chamber 20 is disposed substantially parallel to the flow of the process gas It has a rectangular parallelepiped cross section. In particular, since the exhaust member 50 is disposed on the passage 22 side, the asymmetry of the reaction space 5 due to the passage 22 can be removed, and process nonuniformity generated by the passage 22 can be prevented. have.

In other words, the passage 22 is formed at one side of the chamber 20 so that the substrate W may enter and exit the interior of the chamber 20 through the passage 22, but the passage 22 may cause the chamber 20 to pass through. The space inside has a limitation that asymmetry is inevitable. However, by partitioning the passage 22 from the reaction space 5 through the exhaust plate 50, the reaction space 5 may have symmetry.

That is, the process gas is supplied into the chamber 20 through the supply port 25 in the reaction space 5 of the chamber 20, and the process gas supplied into the chamber 20 through the supply port 25 is The diffusion is performed by passing through the diffusion holes 45 formed in the diffusion plate 44. The diffused process gas passes through the substrate W in the reaction space 5, and the unreacted gas and gas by-products passed through the exhaust holes 55 and the exhaust port 28 formed in the exhaust plate 54 are exhausted. . Therefore, the laminar flow of the process gas may be maintained through the exhaust holes 55 and the diffusion holes 45 formed in the exhaust plate 54 and the diffusion plate 44, respectively, so that the uniform process gas may be supplied to the entire surface of the substrate W. FIG. .

In this case, since the upper surface of the diffusion body 42 is disposed lower than the upper surface of the auxiliary susceptor 30, the upper portion of the diffusion body 42 in the reaction space 5 has a higher height than the upper portion of the auxiliary susceptor 30. Due to this, the process gas passing through the diffusion hole 45 may have a space that can be diffused on the upper portion of the diffusion body 42. Similarly, since the upper surface of the exhaust body 52 is disposed lower than the upper surface of the auxiliary susceptor 30, the upper portion of the exhaust body 52 in the reaction space 5 has a height higher than that of the susceptor 30. Therefore, the process gas passing through the upper portion of the auxiliary susceptor 30 may have a space in which the upper portion of the exhaust body 52 may flow. Therefore, the process gas supplied through the diffusion member 40 and exhausted through the exhaust member 50 may exhibit a uniform flow regardless of the position along the longitudinal direction of the diffusion member 40 or the exhaust member 50. .

In addition, the auxiliary diffusion plate 60 may be installed on the supply port 25. The auxiliary diffusion plate 60 is spaced apart from the diffusion plate 40 at a predetermined interval, and like the diffusion plate 44, a plurality of auxiliary diffusion holes 65 are formed. The auxiliary diffusion hole 65 and the diffusion hole 45 are formed to be offset from each other so that the process gas that has primarily passed through the auxiliary diffusion hole 65 is diffused again through the diffusion hole 45 so that the process gas is formed on the substrate W. The uniform process gas can be supplied by forming and flowing a constant laminar flow in the.

4 and 5 are views showing the standby position and the process position of the exhaust plate shown in FIG. The exhaust plate 50 may have a second cylinder rod 57 connected to the lower portion thereof, and the second cylinder rod 57 may be elevated by the second cylinder 58. As shown in FIG. 4, since the exhaust plate 50 is disposed in front of the passage 22, when the substrate W is loaded into the chamber 20, the second cylinder rod 57 is lowered to lower the exhaust plate 50. By lowering together ('standby position') it is possible to provide a movement path of the substrate (W).

In addition, as shown in FIG. 5, after the substrate W is loaded, when the process for the substrate W is performed, the gate valve provided on the outer side of the passage 22 is closed to close the second cylinder rod. It is possible to raise 57 to raise the exhaust plate 50 together ('process position'). Therefore, during the process, the auxiliary diffusion plate 60, the diffusion plate 44 and the exhaust plate 54 are disposed at substantially the same height, and the process gas dispersed through the auxiliary diffusion plate 60 and the diffusion plate 44 Laminar flow can be maintained through the substrate W to the exhaust plate 54.

6 is a diagram illustrating a heating region and a preheating region of the susceptor illustrated in FIG. 2, and FIG. 7 is a modification of the heating region and the preheating region illustrated in FIG. 6. As shown in FIG. 6, the main susceptor 80 has a heating area 38 for heating the substrate W, and the auxiliary susceptor 30 preheats the gas introduced through the supply port 25. It has a preheating area (39). The heating zone 38 may correspond to the mounting groove 31 on which the substrate W is placed, and the heating zone 38 is disposed closer to the passage 22 than the supply port 25.

In other words, the distance d ₁ between the center C of the heating zone 38 and the passage 22 is less than the distance d ₂ between the center C of the heating zone 38 and the supply port 25. Big. As the heating zone 38 is disposed closer to the passage 22 than the supply port 25, the process gas supplied through the supply port 25 sequentially passes through the auxiliary diffusion hole 65 and the diffusion hole 45. It is possible to provide an easy distance and time for forming the laminar flow toward the substrate (W).

In contrast, as illustrated in FIG. 7, the preheating region 39 ′ may be formed over the auxiliary susceptor 30 except for the heating region 38 ′. That is, the auxiliary susceptor 30 may have a preheating region 39 ′, and the main susceptor 80 may have a heating region 38 ′. The auxiliary susceptor 30 and the main susceptor 80 may be provided with a heater (heating wire) 37 ', respectively, and the auxiliary susceptor 30 may have a higher temperature than the main susceptor 80.

8 and 9 are views showing a gas flow state of the substrate processing apparatus shown in FIG. 2. As shown in FIG. 8, in the process gas supplied through the supply port 25, the auxiliary diffusion hole 65 and the diffusion hole 45 are formed to be offset from each other, and primarily pass through the auxiliary diffusion hole 65. Process gas is further diffused through the diffusion hole (45). That is, the process gas can supply a uniform process gas by forming and flowing a laminar flow on the substrate (W). In addition, the exhaust holes 55 formed in the exhaust plate 50 can be exhausted while maintaining the laminar flow of the process gas, thereby maintaining the uniformity of the edge portion and the center portion of the substrate W. FIG.

In particular, since the reaction space 5 has a rectangular parallelepiped cross section, the reaction space 5 can maintain the same distance from the diffusion plate 44 to the exhaust plate 54, and the process gas is diffused in the reaction space 5. ) To the exhaust plate 54 can be maintained a uniform flow. On the other hand, when the reaction space 5 has a circular cross section, the distance from the diffusion plate 44 to the exhaust plate 54 varies depending on the position, so that the process gas is uniform in the reaction space 5. difficult to maintain flow

In addition, the preheating region 39 may be disposed between the heating region 38 and the supply port 25 so that the heater 37 may be provided on the preheating region 39 similarly to the heating region 38. The heating zone 38 and the preheating zone 39 are individually controllable, for example, the preheating zone 39 may have a temperature above the heating zone 38. As the center C of the heating zone 38 is eccentric with respect to the center of the auxiliary susceptor 30 and is disposed closer to the passage 22 than the supply port 25, the gas passing through the preheating zone 39 is preheated. And flows toward the substrate W. FIG.

As described above, the spreading members 40 may be divided in the longitudinal direction, respectively, and the central spreading member 42 'positioned at the center may be lifted and separated from the side spreading member 42 ". As shown in FIG. 9, when the central diffusion member 42 ′ is lowered or the diffusion member 40 having a different shape is used, the process gas may be supplied with a higher flow rate toward the center portion of the substrate W. FIG.

10 and 11 are exemplary views showing a process procedure of the substrate processing apparatus shown in FIG. 2. As described above, the substrate W transferred through the passage 22 is loaded on the lift pin 32 installed through the main susceptor 30, and the loaded substrate W is lift pin ( 32 is lowered and placed in the seating groove 31 formed in the main susceptor 80. The lift pin 32 is lowered to the bottom of the main susceptor 80 and adjusted to be positioned on the bottom surface of the chamber 20. As described above, the lower part of the main susceptor 80 is supported by the rotation shaft 85, and as the rotation shaft 85 rotates by the driving force of the driving motor 88, the main susceptor 80 is an auxiliary susceptor. It can rotate separately from (30).

In addition, the controller 90 is connected to the driving motor 88 for rotationally driving the first to third on-off valves 72, 75, 78, and the rotation shaft 85, respectively. As shown in FIGS. 10 and 11, the first opening / closing valve 72 installed in the process gas line 71 is opened on the substrate W through the controller 90 to open the first reaction gas on the substrate W. As shown in FIG. The first reaction gas is deposited on the substrate W by supplying it to (Fig. 10 (a)). The first reactor may vary depending on the nature of the film to be deposited. In the case of silicon dioxide, it is applicable to all Bis-based, Tris-based, and Alkyl-amine-based sources such as Tetrakls. In the case of silicon nitride, at least one of DCS, TS, and Halide series may be used. In addition, the polysilicon thin film may be one or more of SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ , Si ₄ H ₁₀ , HCDS, OCTS, DCS.

After depositing the first reaction gas on the substrate W, the first on-off valve 72 is closed and the second on-off valve 75 is opened to purge gas (for example, argon (Ar) or helium (He)). , Inert gas such as xenon (Xe) or krypton (Kr)) or by forcibly removing the gas in the reaction space (5) to remove the first reactant gas or by-products remaining deposited (Fig. 10 (b)) .

Thereafter, the second on-off valve 75 is closed and the third on-off valve 78 is opened to supply the source gas, and the RF power source 19 is controlled to form the reaction space 5 in a plasma atmosphere. W) is plasma treated (Fig. 10 (c)). In the case of plasma treatment, an oxide film, a nitride film, or a polysilicon thin film can be formed at a low temperature. The source gas is a gas that reacts with the first reaction gas described above, and in the case of silicic dioxide, oxygen (O ₂ ), oxygen (O ₂ ), argon (Ar), oxygen (O ₂ ), helium (He), At least one of oxygen (O ₂ ), xenon (Xe), and krypton (Kr) may be one or more of N ₂ and NH ₃ in the case of a silicon nitride.

After that, the purge gas may be supplied again or the gas in the reaction space 5 may be forcibly removed (FIG. 10 (d)), and the first reaction gas and the source gas may be supplied again to form an atomic layer on the substrate W. The deposition process may be repeated.

On the other hand, the main susceptor 80 may be carried out a deposition process for the substrate while maintaining a continuous rotation as necessary, preferably, the controller 90 is a predetermined predetermined on the upper portion of the substrate (W) When the deposition is completed by the thickness, the drive motor 88 is controlled to rotate the rotating shaft 85 at a predetermined angle (Fig. 10 (e)).

For example, as shown in FIG. 10, after the above series of cycles are completed one or more times, the substrate is rotated by rotating the main susceptor 80 at an angle of 90 degrees or a condition and repeating the series of cycles described above. The process for (W) can be carried out. For example, if the cycle required to deposit one thin film is 100, the substrate is iso-divided into 90 degrees, then 25 cycles in the 0 degree position, 25 cycles in the 90 degree position, 25 cycles in the 180 degree position, 270 25 cycles may be performed in the FIG. Position, and after each 25 cycles, the main susceptor 80 and the substrate may rotate. If necessary, the divided angle may vary, and the number of cycles in the divided position may vary. Table 1 shows the measured values of the thickness formed on the substrate W according to the lift position of the central diffusion member 42 'while the main susceptor 80 is fixed and the main susceptor 80 is rotated.

Table 1 No rotation Rotation-1 (Center-High) Rotation-2 (Center-Low) AVG (Å) 268.80 272.11 268.46 Min 267.93 271.24 267.26 Max 270.06 273.36 269.05 Range 2.13 2.12 1.79 Uniformity 0.39 0.39 0.33 G / R (Å / cycle) 1.82 1.84 1.79 THK Map. Figure 12 13 14

As shown in Table 1, when deposition is performed on the substrate W while the main susceptor 80 is fixed, the deposition thickness of the substrate W has a non-uniform shape. When the substrate W is rotated, it can be seen that a uniform thickness is formed at substantially the same radius based on the center of the substrate W. FIG. In addition, when the flow rate of the central portion of the substrate W is increased by lowering or dispersing the central diffusion member 42 'using a spray hole having a specific interval, the central portion of the substrate W has the highest thickness. On the contrary, when the central diffusion member 42 'is raised to supply a flow rate using a spray hole having a uniform or specific interval to the substrate, the central portion of the substrate W may have the thinnest thickness.

That is, the substrate processing apparatus 10 according to the present invention is inserted into an opening 36 formed in the auxiliary susceptor 30 and uses the main susceptor 80 which is rotatable separately from the auxiliary susceptor 30. Can be rotated. In addition, the gas supplied to the opposite side of the passage (22) into which the substrate (W) is drawn can be diffused, and the substrate (W) is provided through the diffusion members (42, 42 ') which are divided into a plurality of longitudinally and liftable separately. The flow rate of the gas supplied to the bed can be adjusted. Therefore, the operator can easily adjust the deposition thickness and the thickness distribution on the substrate (W) to improve the quality and productivity of the substrate.

In the present embodiment, the substrate W is rotated after one or more cycles are completed. However, the substrate W may rotate in the last purge process (during purge gas supply) during the cycle. Since the purge process does not affect the deposition process on the substrate W, and only removes reaction byproducts inside the chamber, the rotation of the substrate W may be performed together with the purge process. In this case, it is possible to implement an efficient process by reducing the overall process time.

The substrate processing apparatus described above is not limited to the configuration of the above-described embodiments, but the embodiments may be configured by selectively combining all or some of the embodiments so that various modifications can be made. .

The present invention can be applied to various types of semiconductor manufacturing equipment and manufacturing methods.

Claims (11)

A chamber in which a substrate is transferred through a passage formed on one side, providing an internal space in which a process is performed on the substrate, and a supply port configured to supply a gas toward the substrate on an opposite side of the passage; An auxiliary susceptor installed in the inner space and having a shape corresponding to the inner space and having an opening formed therein; And And a main susceptor inserted into the opening and rotatable in a state where the substrate is placed, and which heats the substrate. The method of claim 1, The substrate processing apparatus, A rotating shaft rotatably supporting the main susceptor; A drive motor for driving the rotating shaft; A gas supply line connected to the supply port to supply the gas to the substrate; An on / off valve installed on the gas supply line to open and close the gas; And And a controller connected to the driving motor and the on / off valve, respectively, the controller capable of controlling the driving motor and the on / off valve, respectively. The controller opens the on / off valve to supply the gas, and after the supply of the gas is completed, drives the driving motor in a state where the on / off valve is closed to rotate the main susceptor by a predetermined angle. Device. The method of claim 2, The gas supply line, A process gas line for supplying a process gas to the internal space; A purge gas line for supplying purge gas to the internal space; And It is provided with a source gas line for supplying a source gas in the internal space, The on-off valve, A first on-off valve installed on the process gas line to open and close the process gas line; A second on / off valve installed on the purge gas line to open and close the purge gas line; And A third on / off valve installed on the source gas line to open and close the source gas line, The controller supplies the process gas by opening the first on / off valve in a state where the second and third on / off valves are closed, and after the supply of the process gas is completed, the first and third on / off valves are closed. Open the second on / off valve to supply the purge gas, and after the supply of the purge gas is completed, open the third on / off valve in the closed state to close the source gas. And supply the drive motor by rotating the main susceptor by a predetermined angle after the supply of the source gas is completed and the first to third open / close valves are closed. The method of claim 3, The substrate processing apparatus, An antenna installed on an upper portion of the main susceptor to generate a plasma atmosphere in the internal space; And And supplying a high frequency current to the antenna, the power supply being connected to the controller and controlled by the controller, And the controller supplies a current to the antenna through the power supply while the source gas is supplied. The method of claim 1, A diffusion having a plurality of diffusion holes positioned at an outlet side of the supply port to partition the supply port and the internal space and communicating the supply port and the internal space to diffuse the gas supplied through the supply port; absence; And Further comprising a lifting member capable of lifting the diffusion member, The diffusion member includes a central diffusion member corresponding to a central portion of the inner space and side diffusion members installed on both sides of the central diffusion member. And the elevating member includes a central elevating member capable of elevating the central diffusion member and a side elevating member capable of elevating the side diffusion member. The method of claim 1, And the opening is eccentrically disposed about the susceptor. In the method for processing a substrate provided into the chamber by supplying at least one gas into the interior of the chamber having a cuboid-shaped inner space, After the main susceptor rotatable separately from the auxiliary susceptor is installed on the opening of the auxiliary susceptor installed in the inner space and the gas is supplied while the substrate is placed on the main susceptor. When the supply is complete, the substrate is rotated by a predetermined angle by the rotation of the main susceptor in a state in which the supply of the gas is stopped. The method of claim 7, wherein The substrate processing method, A diffusion member that can partition the inside of the chamber is installed at the outlet side of the supply port formed on one side of the chamber, The central diffusion member located in the center of the diffusion member is lowered to form a space in communication with the inside of the chamber and the supply port on the upper portion of the central diffusion member, and side surfaces provided on both sides of the central diffusion member among the diffusion members. The gas is supplied through the space and the diffusion holes by communicating the inside of the chamber and the supply port through the diffusion holes of the side diffusion member in the state of partitioning the inside of the chamber and the supply port through the diffusion member. , Substrate processing method. The method of claim 7, wherein The method for supplying the gas, Supplying a process gas; Stopping supply of the process gas and supplying a purge gas to purge the inside of the chamber; And stopping supply of the purge gas and supplying source gas. The method of claim 9, The method for supplying the gas, And generating a plasma atmosphere inside the chamber while the source gas is supplied. The method of claim 10, The method for supplying the gas, And stopping the supply of the source gas and supplying the purge gas to purge the inside of the chamber.

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