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WO2015162023A1 - Composant optoélectronique à semi-conducteur et procédé de production d'un composant optoélectronique à semi-conducteur - Google Patents

Composant optoélectronique à semi-conducteur et procédé de production d'un composant optoélectronique à semi-conducteur Download PDF

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Publication number
WO2015162023A1
WO2015162023A1 PCT/EP2015/057934 EP2015057934W WO2015162023A1 WO 2015162023 A1 WO2015162023 A1 WO 2015162023A1 EP 2015057934 W EP2015057934 W EP 2015057934W WO 2015162023 A1 WO2015162023 A1 WO 2015162023A1
Authority
WO
WIPO (PCT)
Prior art keywords
carrier
semiconductor chips
semiconductor
chips
potting material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2015/057934
Other languages
German (de)
English (en)
Inventor
Frank Singer
Stefan GRÖTSCH
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2015162023A1 publication Critical patent/WO2015162023A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape

Definitions

  • An optoelectronic semiconductor component is specified.
  • a method for producing an optoelectronic semiconductor device is specified.
  • An object to be solved is to provide an optoelectronic semiconductor device that efficiently electrically
  • At least one carrier has a microcontroller.
  • each of the carriers has one or more
  • Microcontroller on By means of the microcontroller is an electrical addressing and electrical control of the semiconductor device and / or individual components of the
  • the at least one semiconductor chip is, for example, a light-emitting diode or a laser diode.
  • the at least one optoelectronic semiconductor chip is in operation of the Semiconductor device temporarily or permanently for generating light, in particular visible light, set up.
  • the optoelectronic semiconductor chip has a
  • the semiconductor layer sequence is preferably based on a III-V compound semiconductor material.
  • Semiconductor material is, for example, a
  • Nitride compound semiconductor material such as Al n In] __ n _ m Ga m N or a phosphide compound semiconductor material such as Al n In] __ n _ m Ga m P or an arsenide compound semiconductor material such as Al n In] __ n _ m Ga m As, where each 0 ⁇ n ⁇ 1, 0 ⁇ m ⁇ 1 and n + m ⁇ 1.
  • the semiconductor layer sequence such as Al n In] __ n _ m Ga m N or a phosphide compound semiconductor material such as Al n In] __ n _ m Ga m P or an arsenide compound semiconductor material such as Al n In] __ n _ m Ga m As, where each 0 ⁇ n ⁇ 1, 0 ⁇ m ⁇ 1 and n + m ⁇ 1.
  • the semiconductor layer sequence such as Al n In] __ n _ m
  • Semiconductor layer sequence that is, Al, As, Ga, In, N or P, indicated, although these may be partially replaced by small amounts of other substances and / or supplemented.
  • the at least one semiconductor chip is on a carrier top side of the carrier
  • the one or more semiconductor chips are electrically connected to the microcontroller.
  • the one or more semiconductor chips are specifically individually addressable and electrically controllable via the microcontroller.
  • this includes
  • Semiconductor component two, three or more than three electrical Contact points.
  • the at least two or at least three electrical contact points are to an external one
  • the contact points are
  • Microcontroller electrically connected. This is a control of a current flow to the associated
  • Semiconductor component at least one optical body.
  • the one or more optical bodies are set up for geometrical and / or spectral beam shaping of the light generated by the at least one semiconductor chip during operation. For example, an angular distribution of the emitted radiation is influenced by the optical body or by means of the optical body, spectral components are removed from the light generated in the semiconductor chip and / or added.
  • the at least one optical body is located on the carrier top side.
  • the optical body may be limited to the carrier top. It is the optic body indirectly, so with the help of others
  • Optoelectronic semiconductor device a carrier.
  • the carrier includes a microcontroller to an electrical
  • At least one optoelectronic semiconductor chip which is set up to generate light is at one
  • the semiconductor device has at least three electrical contact points, wherein at least two of the contact points are connected to the microcontroller. At least one optic body to one
  • geometric and / or spectral beam shaping is located directly or indirectly on the carrier top side of the carrier. Especially in vehicles such as automobiles is a trend towards ever higher resolutions, especially in adaptive
  • Terminals for an anode as well as for a cathode
  • a plurality of the carriers are mechanically integrated in a carrier assembly.
  • the carrier by a plastic body, made for example by means of pressing or spraying, solid
  • the carriers do not separate from each other in the intended use of the semiconductor device and do not change in their relative position to each other.
  • all carriers are in a common plane.
  • the carrier composite is preferably planar and planar.
  • carrier top sides of the carrier preferably all in the same direction and the
  • the semiconductor chips can be located in a further common plane, in particular parallel to the carrier top sides.
  • this includes
  • the at least one optical shield is
  • radiopaque for generated during operation of the semiconductor device light Through the shield are adjacent
  • the shields between adjacent semiconductor chips are each such
  • Semiconductor component means that in this case only paths or possible distances are considered, which extend completely in an interior of the semiconductor device.
  • Semiconductor chips assigned to one of the carrier or vice versa. For example, two, three, four or more than four of the semiconductor chips are preferably unique to one of the carriers
  • semiconductor chips and the carriers in a one-to-one arrangement before.
  • the semiconductor chips and the carriers are thus uniquely associated with each other.
  • this includes
  • Semiconductor device one or more potting materials.
  • the at least one potting material is preferred
  • the potting material may be a one Observer white or black or appearing colored
  • Semiconductor chips in each case surrounded by the potting material.
  • the semiconductor chips may be in direct contact with the potting material. Furthermore, that can
  • Potting material touch the carrier top. According to at least one embodiment, the
  • Semiconductor chips each have a main radiation side. About the main radiation side of the majority of the radiation generated in the semiconductor chips from the
  • the at least one conversion means is set up for a partial or complete conversion of the light emitted by the at least one semiconductor chip into a radiation of another, in particular larger, wavelength.
  • the at least one conversion means in the direction away from the carrier top side is arranged downstream of the associated semiconductor chip and optionally also the associated potting material.
  • the conversion means preferably covers the associated semiconductor chip completely, as seen in plan view of the main radiation side.
  • the optical body is at least through the potting material and through the
  • the optical body can have a further component, such as a scattering agent.
  • Optic body can thus comprise several components.
  • the various components of the optic body may be formed by different materials. Prefers
  • the different components of the optic body touch each other.
  • the optical body is designed by a coherent material area.
  • the optic body can be a
  • optical body can be handled separately from other components of the semiconductor device.
  • the scattering agent is preferably arranged in a layered and radiation-permeable manner.
  • the scattering agent comprises a matrix material which is transparent and light-scattering particles introduced into the matrix material.
  • the scattering means is preferably set up for a radiation expansion in the direction parallel to the at least one carrier top side. By the scattering agent, for example, a uniform illumination of the conversion agent is possible.
  • the scattering means completely covers the semiconductor chip and the potting material, as seen in plan view on the main radiation side.
  • the scattering agent extends completely between the
  • the electrical lines are set up for an electrical connection within the semiconductor component.
  • the electrical lines extend between the electrical contact surfaces, the microcontroller and / or the at least one semiconductor chip.
  • the at least one semiconductor chip is preferably bond wire-free via the electrical lines in conjunction with
  • Lines to the main radiation side of the at least one semiconductor chip zoom.
  • the semiconductor chip is contacted on the main radiation side by means of a bonding wire.
  • the bonding wire can completely or partially into the potting material and / or the
  • Be embedded scattering means and / or the conversion means Be embedded scattering means and / or the conversion means.
  • the at least one shield extends into the potting material or through the potting material. That's it
  • Lines at the top of the carrier assembly rests and is in contact with these lines.
  • the shield can be placed on the potting material.
  • the at least one shield is formed from an electrically insulating material.
  • the shield has a coating of an electrically insulating material.
  • the shield may also be made entirely or partially of a metal or a metal alloy, for example by electroplating.
  • Shields can be round, oval, hexagonal, rectangular or square, seen in plan view.
  • all the shields of the semiconductor device are designed as a single piece and hang together. The shields then form a kind
  • Grid which can be placed on the carrier composite.
  • all the electrical contact surfaces are to an external electrical Contacting of the semiconductor device on the same side of the carrier composite, ie at the top or at the bottom of the carrier composite.
  • the electrical contact surfaces are to an external electrical Contacting of the semiconductor device on the same side of the carrier composite, ie at the top or at the bottom of the carrier composite.
  • the electrical contact surfaces are not surrounded or bordered by the optical shields. In other words then lie the
  • At least one of the semiconductor chips together with the associated optical body for emitting blue light and / or at least one of the semiconductor chips together with the associated optical body to
  • red light set up It is included possible that the respective semiconductor chips directly generate blue, red or green light.
  • one or more conversion means it is possible for one or more conversion means to be arranged downstream of the semiconductor chips or at least a part of the semiconductor chips for a wavelength conversion,
  • differently colored light for example cyan or yellow light
  • the semiconductor chips can therefore be differently constructed semiconductor chips, for example
  • the semiconductor chips are all identical in construction and, for example, are set up to produce blue light.
  • the semiconductor device may emit mixed radiation, such as white light.
  • Mixed radiation is then composed of the light of the plurality of semiconductor chips.
  • the division into differently colored light-emitting regions is achieved in particular by the optical shielding.
  • the light exit surface can be designed planar or curved. Outside the
  • Semiconductor device may then take place a light mixture.
  • an average distance between adjacent semiconductor chips is at least 3% or 5% or 7% of a mean edge length of Semiconductor chips. Alternatively or additionally, this distance is at most 30% or 20% or 15% or 10% of the mean edge length. In particular, the average is
  • the average edge length of the semiconductor chips may be at least 200 ym or 400 ym or 600 ym and / or at most 1200 ym or 800 ym or 600 ym or 300 ym. In accordance with at least one embodiment, several of the
  • a mean edge length of the pixel is at least 400 ym or 600 ym or 800 ym, seen in plan view.
  • Microcontroller via a common supply voltage and / or via a common ground connection.
  • all microcontrollers are mounted on a common data line.
  • the respective microcontroller then have a data input and a data output, wherein a data output of a preceding microcontroller preferably with a data input of a subsequent
  • Microcontroller is connected.
  • semiconductor chips arranged in a two-dimensional matrix. That is, the semiconductor chips can be two-dimensional
  • the modules regularly arranged, seen in plan view in particular on the main radiation sides. According to at least one embodiment, the
  • the semiconductor chips may be larger or smaller than the associated carrier. Alternatively, it is possible that the
  • Semiconductor chips are designed congruent to the respective associated carriers. Furthermore, it is possible for one or more of the semiconductor chips to project beyond the associated carrier, as seen in plan view.
  • Shield in the direction away from the wearer, flush with the optic body. Furthermore, the shield can be flush with the light exit surface of the semiconductor device and form part of the light exit surface.
  • Semiconductor chips are from the radiation-transmissive
  • the shield is from the associated carriers and / or from the associated ones
  • the method comprises at least the following steps, preferably in the order given:
  • the step of providing the carriers comprises the one-dimensional or two-dimensional or three-dimensional arrangement of the carriers. Subsequently, the carrier with a
  • Carrier molding material formed, for example by means of injection molding or injection molding. In this forming upper sides and lower sides of the carrier preferably remain free of the
  • the carriers are preferably mechanically firmly integrated into the carrier composite and the carrier composite is formed.
  • the step of providing the carriers comprises the formation of conductor tracks on one or both sides of the carrier assembly.
  • the Conductor tracks are produced for example by means of electroplating or vapor deposition.
  • the step of providing the semiconductor chips comprises the step of reshaping the one-dimensionally, two-dimensionally or three-dimensionally arranged semiconductor chips with a forming compound.
  • the molding compound is preferably a plastic such as a silicone or an epoxy.
  • Forming compound and / or reaches the carrier molding compound Forming compound and / or reaches the carrier molding compound.
  • the frame assembly is mounted on the carrier assembly.
  • a one-to-one association of the semiconductor chips to the one preferably takes place
  • the frame composite can with the carrier composite
  • the carrier composite which is joined together with the frame composite, to the
  • each of the semiconductor components has one or more of the semiconductor chips and / or the carrier.
  • the semiconductor chips can also be applied individually to the carrier composite
  • the semiconductor chips are preferably after application to the carrier composite with about the potting material, the scattering agent and / or the
  • Conversion partially or completely transformed for example by casting or spraying or pressing. Before, in or after this process step, the generation of the optical shield can also take place.
  • Embodiments of methods of manufacture from here described optoelectronic semiconductor devices are described.
  • FIG. 1A shows an embodiment of an optoelectronic semiconductor component 1 in a sectional view along the line A-A of the plan view in FIG. 1B.
  • the semiconductor device 1 has a carrier composite 20.
  • the carrier composite 20 is formed by a plurality of carriers 2 which are mechanically connected to one another by a carrier molding compound 28
  • a metallization 9 is attached on a lower side of the carrier assembly 20, on which also lower sides 24 of the carrier 2 are located. About the metallization 9, the semiconductor device 1 to an external, not
  • illustrated carrier attachable, for example by means of soldering.
  • the semiconductor chips 3 are in particular each light-emitting diodes, short LEDs.
  • Semiconductor chips 3 are attached to the carrier tops 23. Radiation main sides 30 of the semiconductor chips 3 are the
  • the contact points 4 attached.
  • the contact points 4 are via electrical lines 7 to the carriers 2 and with the
  • the carriers 2 each contain a microcontroller 26.
  • the microcontroller 26 is formed in or on a carrier substrate 27 of the carrier 2.
  • the carrier 2 is based on silicon and the microcontroller 26 is formed by one or more recrystallized silicon layers or comprises at least one such layer.
  • Microcontroller 26 the individual semiconductor chips 3 are addressed and selectively controlled, in particular individually controlled.
  • the microcontroller 26 is preferably monolithically integrated in the carrier 2.
  • the microcontroller 26 may comprise a register such as a shift register, transistors and / or switches.
  • the microcontroller 26 is manufactured in silicon technology.
  • the carrier 2 may also be based on another semiconductor material such as germanium.
  • the semiconductor component 1 has optical shields 6. The shields 6 are located in each case between adjacent semiconductor chips 3 and extend from the top side of the carrier assembly starting at one end
  • shields 6 is preferably prevents generated in one of the semiconductor chips 3 light within the
  • Semiconductor device 1 passes to adjacent semiconductor chips 3.
  • the shields 6 are so
  • radiopaque for generated during operation of the semiconductor device light.
  • the potting material 51 extends to the
  • Radiation main pages 30 zoom.
  • the potting material 51 is divided by the shields 6 into a plurality of separate regions.
  • the potting material 51 is followed by a conversion agent 53 in the direction away from the carriers 2.
  • a conversion agent 53 for example, that is
  • Conversion means 53 adapted to absorb a part of a blue light generated in the semiconductor chips 3 in operation, and in about yellow light
  • the shields 6 each extend through the potting material 51 and border the potting material 51 and the conversion means 53 to individual, optically separated
  • Conversion agent 53 fills the shields. 6
  • the light exit surface 10 of the semiconductor device 1 is formed by the shields 6 together with the conversion means 53.
  • Light exit surface 10 is planar and flat.
  • Figure 2 is a sectional view and in plan views a manufacturing method for another
  • FIG. 2A shows that a plurality of the carriers 2 with the microcontrollers 26 and the carrier substrates 27 are applied to a temporary auxiliary carrier 8.
  • the carrier 2 already have electrical contact points 4 for electrical contacting of the carrier 2. Deviating from the representation, it is also possible that the
  • Microcontroller 26 is located closer to the carrier base 24 than on the carrier top 23. It may be identical or different from each other.
  • Subcarrier 8 are surrounded by a carrier molding compound 28. As a result, the individual carriers 2 are combined to form the carrier composite 20.
  • the carrier composite 20 In the intended use of the
  • the carrier assembly 20 is mechanically stable, so that the carrier 2 are mounted immovably relative to each other.
  • the carrier composite 20 is flat. Notwithstanding the representation according to FIG. 2, the carrier composite 20 can also have a curved upper side.
  • FIG. 2C shows that the electrical leads 7, further electrical contact points 4 and the metallization 9 are provided on the undersides 24 and on the upper sides 23 be applied, for example by means of electroplating and / or by vapor deposition. Via the electrical lines 7, the contact points 4 on the respective carriers 2 and also between the carriers 2 are electrically connected to each other
  • Subpages 24 is preferably used only for attachment of the carrier assembly 20 and for thermal contacting of the carrier assembly 20. According to Figure 2C, the subcarrier 8 is removed.
  • the carrier 2 is in each case connected to the larger contact surfaces
  • semiconductor chips 3 attached, for example by gluing or by soldering.
  • the semiconductor chips 3 preferably project beyond the electrical leads 7 in the direction away from the carrier assembly 20.
  • the semiconductor chips 3 each have an electrical contact
  • the semiconductor chips 3 are flip chips whose contact points then either face the carrier assembly 20 or the
  • Carrier composite 20 are turned away, as is possible in all other embodiments.
  • For an external electrical contact has
  • Contact points is designed as ground contact GND and is connected via the electrical lines 7 with all the carrier 2 and microcontroller 26. Furthermore, one is
  • a contact point for a data input Din and for a data output Dout is provided.
  • the respective data inputs Din of the carrier 2 are to the respective
  • Carrier 2 electrically connected.
  • a radiation-permeable potting material 51 is mounted around the LED chips 3 around.
  • Potting material 51 covers the printed conductors 7 on the upper side of the carrier composite 20.
  • the potting material 51 is limited to the upper side of the carrier composite 20.
  • the electrical contact points 4 on the main radiation sides 30 preferably remain free of the potting material 51.
  • FIG. 2F shows that plated-through holes 73 are formed through the potting material 51.
  • Vias 73 are formed, for example, by holes that are completely or partially filled with a metal.
  • the electrical leads 7 adjoin the plated-through holes 73 on a side of the potting material 51 facing away from the carrier composite 20. About these electrical lines 7, the main radiation sides 30 of the semiconductor chips 3 are electrically contacted.
  • Shields 6 applied.
  • the shields 6 are integrated in a single piece of material.
  • the shields 6 do not cover the semiconductor chips 3, as seen in plan view. Cavities in the direction away from the carrier assembly 20 above the semiconductor chips 3 are defined by the shields 6.
  • FIG. 2H shows that the cavities defined by the shields 6 are connected to the conversion means 53
  • the potting material 51 is a single, continuous layer.
  • the shields 6 are on the potting material 51st
  • the semiconductor chips 3 are contacted with bonding wire via the electrical
  • Contact points 4 for the external electrical contacting of the semiconductor device 1 are located on the same side as the metallization 9 and thus on the semiconductor chips 3 opposite underside of the carrier assembly 20.
  • the contact points 4 are via the vias 73 through the carrier assembly 20 through with the electrical lines. 7 connected at the top of the carrier composite 20.
  • the production method as described in FIG. 2, can also be transferred to optoelectronic semiconductor components 1, as illustrated for example in connection with FIGS. 1 or 3.
  • a further exemplary embodiment of the semiconductor component 1 is shown in a sectional view in FIG. 3A and in a plan view in FIG. 3B. Notwithstanding the illustration according to FIG. 2H, the contact points 4 are for
  • the scattering means 52 projects beyond the semiconductor chips 3 in each case laterally, that is to say in the direction parallel to them
  • a light emitting area at the light exit surface 10 is thus preferably given by the complete area covered by the conversion means 53.
  • Light exit surface 10 is formed by the shields 6, no light is at the light exit surface 10th
  • a width and an area of these very narrow areas, which are formed by the shields 6, is negligible.
  • this width is at most 60 ym or 30 ym or 15 ym or 10 ym. Therefore, a downstream optics for laminating the non-light-emitting regions of the light exit surface 10 is dispensable. For a viewer therefore appears the
  • Light exit surface 10 preferably in the on state as continuously lit, with or without subordinate
  • FIG. 4 shows a further exemplary embodiment of a
  • Carrier composite 20 are already the metallization 9, the electrical wires 7 and the electrical
  • a frame composite 33 is provided.
  • the individual semiconductor chips 3 are summarized.
  • the semiconductor chips 3 are over a
  • Forming compound 38 mechanically connected.
  • FIG. 4C it is shown that the frame composite 33 is applied to the carrier composite 20. In this case, a one-to-one assignment of the semiconductor chips 3 to the carriers 2 takes place.
  • the manufacturing method corresponds to the manufacturing method according to Figure 4.
  • the frame assembly 33 has additional
  • Contact points 4 to an external electrical contacting of the semiconductor device 1 are located on a carrier composite 20 remote from the top of the frame assembly 33.
  • the contact points 4 are thus substantially in a common plane with the main radiation sides 30 of the
  • the frame assembly 33 is applied to the carrier assembly 20, wherein the electrical leads, plated-through holes and contact points
  • FIG. 6A shows a larger, two-dimensional arrangement of the semiconductor chips 3 on the
  • Carrier composite 20 shown.
  • the semiconductor chips 3 are grouped. Separation areas S are optionally mounted between adjacent groups. Both
  • Separation areas S are, for example, sawing streets, along which the carrier assembly 20 is too
  • Semiconductor chips 3 can be separated.
  • each of the semiconductor chips 3 is combined to form a group.
  • Each of the groups of three of the semiconductor chips 3 has four of the pads 4 and only a small number of traces.
  • the groups 3 can be mirror-symmetrical to an optionally existing one
  • FIG. 6C shows a grouping of the semiconductor chips 3 and interconnection of the semiconductor chips 3 analogously to FIG. 6B in the left-hand half of the figure.
  • An interconnection is illustrated in the right-hand half of the figure, with several of the groups being connected in series via correspondingly guided electrical lines 7.
  • the five groups of three in the right half of FIG. 6C for example, only four of the electrical contact points 4 for external electrical contacting are required. It is not absolutely necessary that all of the lines 7 run in one plane.
  • the semiconductor chips 3 are individually electrically controllable by means of the microcontroller.
  • a semiconductor component 1 is mounted on an external mounting plate E, for example a metal plate with or without conductor tracks.
  • the semiconductor device 1 has a matrix of 25 ⁇ 6 regularly arranged semiconductor chips.
  • Connecting and driving the semiconductor device 1 are preferably only three tracks, so for a
  • Semiconductor devices 1 attached. In each case, 25 of the semiconductor devices 1 are arranged in a row. Each of the semiconductor devices 1 has, for example, three
  • Semiconductor chips 3 on. For connecting and driving these semiconductor devices 1 are preferably also only three
  • Such semiconductor devices 1 as used in conjunction with FIG. 7B may be constructed as shown in the plan view of FIG. They can only be schematic
  • the semiconductor device 1 in Fig. 8 comprises a red light emitting unit R, a green light emitting unit G, and a blue light emitting unit B.
  • the corresponding wavelengths can be generated directly in the respective semiconductor chips or even in combination with a conversion agent.
  • FIG. 9 shows a production method for
  • the semiconductor chip 3 is applied to the carrier 2 with the microcontroller 26.
  • FIG. 9C it can be seen that the main radiation side 30 of the semiconductor chip 3 is contacted to the carrier 2 by means of a bonding wire 75. All external electrical
  • Carrier base 24 see the bottom view of Figure 9C3.
  • the potting material 51 comprises a silicone as matrix material into which reflective particles, for example of titanium dioxide or alternatively absorbent particles, for example of soot, are introduced.
  • the conversion agent 53 is applied to the potting material 51, so that the optical body 5 is completely formed and the
  • an opening 77 is created in the potting material 51, see Figure 10D. Subsequently, the opening 77 is filled by a metallization 9, so that the
  • Potting material 51 and the electrical line 7 is generated toward the main radiation side 30. Subsequently, analogously to FIG. 9D, the conversion agent 53 is applied, compare FIG. 10F.
  • the arrangement schemes of FIG. 11 are thus particularly applicable to the exemplary embodiments, such as in FIG.
  • FIG. 12 shows schematic plan views
  • FIG. 12A it is shown that a single
  • This area emits, for example, white light and thus represents a white-emitting area W.
  • a red-emitting region R, a blue-emitting region B and a green-emitting region G are present. Notwithstanding this, according to FIG. 12C, two smaller, red-emitting regions R are present.
  • Semiconductor components 1 as shown in connection with Figure 8, alternatively find use. Corresponding groupings and plan views of pixels can also be implemented analogously in the case of the semiconductor components 1 from FIGS. 7A and 7B.
  • FIGS. 13A and 13B Arrangements with only a few electrical leads 7, via which a plurality of the semiconductor chips 3 are connected, are shown in FIGS. 13A and 13B.
  • the semiconductor chips 3 are each arranged along strands with three lines each. For ease of illustration, only three of the semiconductor chips 3 are along each strand
  • FIG. 13B a number of the electrical lines 7 are further reduced, the electrical lines 7 being drawn in a simplified manner. Bridges between adjacent lines are symbolized by arrows.
  • Semiconductor chips 3 mounted in a triangular formation on the support 2.
  • the other components of the semiconductor device 1, such as the shield or the optical body are for
  • Figure 16 is another in a plan view
  • a blue light emitting semiconductor chip 3B, a green light emitting semiconductor chip 3G and a red light emitting semiconductor chip 3G are applied, all of which are inside the single shield 6.
  • the shield 6 can be applied directly to the carrier 2, wherein the shield 6 does not project beyond the carrier 2, seen in plan view, unlike that in FIG. 14, for example.
  • test contact 4t in particular for testing the semiconductor device 1, such as in front of a test contact 4t
  • the semiconductor component 1 has three
  • Conversion means 53 is assigned by the shield 6b from the others, not the conversion means 53
  • the shield 6a surrounds the carrier 2 all around and lies, seen in plan view, adjacent to the carrier 2. Corresponding configurations of the shield relative to the carrier 2, as shown in connection with Figures 16 and 17, may also be present in all other embodiments.
  • only one carrier 2 is present in the carrier assembly 20.
  • a multiplicity of carriers 2 together with the associated semiconductor chips 3 can also be integrated in the carrier assembly 20, analogously to the exemplary embodiments according to FIGS. 1 to 8.
  • a corresponding arrangement of the semiconductor chips 3 on the carrier 2 can also be present in all other exemplary embodiments, even with a different number of semiconductor chips 3.
  • Radiation is an array of semiconductor chips that can be built up has only negligible optical gaps.
  • a light exit surface is lichtabstrahlend the whole surface, with the exception of narrow areas where the
  • a width of the shields is preferably at most 1% or 3% or 5% or 10% or a mean extent of
  • Semiconductor chips and the carrier with the microcontrollers also allow a structure with a narrower grid and thus with a higher luminance.
  • Chip sizes can be in a single semiconductor device
  • Semiconductor components described here can be used, for example, in adaptive headlights of motor vehicles. Likewise, semiconductor components described in FIG Projectors or in general lighting or as so-called spotlights usable. A use in ambient lighting or ambient lighting is also possible, for example in the automotive sector, the illumination of a car sky or as scene lighting in a living area and / or in a business area.

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  • Led Device Packages (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)

Abstract

L'invention concerne un composant optoélectronique à semi-conducteur (1) comprenant un support (2). Le support (2) contient un microcontrôleur(26) permettant un adressage électrique et la commande du composant à semi-conducteur (1). Au moins une puce électronique semi-conductrice (3), qui est mise au point pour produire de la lumière, est montée sur une face supérieure (23) du support (2) et reliée électriquement au microcontrôleur (26). Le composant à semi-conducteur (1) comprend au moins trois points de contact électriques (4), au moins deux points de contact (4) étant reliés au microcontrôleur (26). Au moins un corps optique (5) permettant la formation d'un faisceau géométrique et/ou spectral se situe directement ou indirectement sur la face supérieure (23) du support.
PCT/EP2015/057934 2014-04-23 2015-04-13 Composant optoélectronique à semi-conducteur et procédé de production d'un composant optoélectronique à semi-conducteur Ceased WO2015162023A1 (fr)

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DE102014105734.1A DE102014105734A1 (de) 2014-04-23 2014-04-23 Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
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CN110034104A (zh) * 2017-11-17 2019-07-19 欧司朗光电半导体有限公司 显示设备和用于制造显示设备的方法
CN111194481A (zh) * 2017-10-06 2020-05-22 欧司朗Oled有限责任公司 发光构件、显示设备和用于制造显示设备的方法
CN111295745A (zh) * 2017-10-27 2020-06-16 欧司朗Oled股份有限公司 用于制造多个半导体芯片的方法和半导体芯片
CN113169164A (zh) * 2018-11-20 2021-07-23 欧司朗光电半导体有限公司 多像素显示设备
JP2022508721A (ja) * 2018-10-15 2022-01-19 ヴァレオ ビジョン 調整可能アーキテクチャを有するマトリックス光源

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WO2025202478A1 (fr) * 2024-03-28 2025-10-02 Ams-Osram International Gmbh Composant optoélectronique et procédé de fabrication d'un composant optoélectronique

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CN111194481B (zh) * 2017-10-06 2023-10-17 欧司朗Oled有限责任公司 发光构件、显示设备和用于制造显示设备的方法
CN111295745A (zh) * 2017-10-27 2020-06-16 欧司朗Oled股份有限公司 用于制造多个半导体芯片的方法和半导体芯片
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