WO2015147127A1 - Plasma spraying device - Google Patents
Plasma spraying device Download PDFInfo
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- WO2015147127A1 WO2015147127A1 PCT/JP2015/059294 JP2015059294W WO2015147127A1 WO 2015147127 A1 WO2015147127 A1 WO 2015147127A1 JP 2015059294 W JP2015059294 W JP 2015059294W WO 2015147127 A1 WO2015147127 A1 WO 2015147127A1
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- Prior art keywords
- plasma
- supply amount
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- gas
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/44—Plasma torches using an arc using more than one torch
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/22—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed electrically, magnetically or electromagnetically, e.g. by arc
- B05B7/222—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed electrically, magnetically or electromagnetically, e.g. by arc using an arc
- B05B7/226—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed electrically, magnetically or electromagnetically, e.g. by arc using an arc the material being originally a particulate material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder or liquid
Definitions
- the present invention has a main torch having a main anode and a sub torch having a sub-cathode, and forms a film by spraying a sprayed material melted by a plasma arc formed between the main anode and the sub-cathode onto a substrate.
- the present invention relates to a plasma spraying apparatus.
- a material discharge hole is provided at the center of the center axis of the main anode of the main torch, and the material discharge hole extends from the center axis of the main electrode.
- a plasma spraying apparatus that can supply a spraying material along the surface, efficiently melt the spraying material and spray it onto a base material, and form a dense spraying material film with few pores (for example, Patent Documents) 1 and 2).
- the cathode that forms the starting point of the plasma arc that becomes a high temperature is on the sub-torch side, so that the adhesion of the sprayed material to the main electrode side can be suppressed. Therefore, it is possible to provide a material discharge hole in the main electrode. That is, in the past, in order to avoid adhesion of the thermal spray material to the main electrode, the thermal spray material was supplied from a direction inclined with respect to the central axis of the main electrode where the plasma arc is formed. A thermal spray material can be supplied along.
- an object of the present invention is to provide a plasma spraying apparatus capable of forming a film by changing the supply conditions of the spraying material.
- a plasma spraying apparatus of the present invention includes a main anode having a material feeding pipe for feeding a sprayed material along a central axis together with a material supply gas for feeding the sprayed material.
- the sprayed material is fed together with the material supply gas from the material feeding pipe into the plasma flame formed along the central axis of the main anode by the introduced subplasma gas.
- a supply amount controller for controlling the supply amount of the material supply gas.
- the supply amount control unit for controlling the supply amount of the material supply gas for forming the coating on the base material is provided.
- the supply amount control unit for controlling the supply amount of the material supply gas, it is possible to form the coating by varying the supply amount of the material supply gas as the spraying material supply condition when reaching the substrate.
- the supply amount control unit controls the supply amount of the material supply gas so as to change the characteristics of the coating to be formed. According to such a plasma spraying apparatus, it is possible to form coatings having different characteristics by controlling the supply amount of the material supply gas by the supply amount control unit. In this plasma spraying apparatus, it is preferable that the supply amount control unit controls the supply amount of the material supply gas independently of the supply amount of the thermal spray material.
- the characteristic of the film is preferably the thickness of the film to be formed. According to such a plasma spraying apparatus, it is possible to form coatings having different thicknesses by controlling the supply amount of the material supply gas by the supply amount control unit.
- the supply amount of the material supply gas is reduced by the control of the supply amount control unit as the thickness of the coating is increased. According to such a plasma spraying apparatus, it is possible to form a thicker film by reducing the supply amount of the material supply gas by the supply amount control unit, and by increasing the supply amount of the material supply gas. It is possible to form a thinner film.
- the characteristic of the film may be the hardness of the film to be formed. According to such a plasma spraying apparatus, it is possible to form coatings having different hardnesses by controlling the supply amount of the material supply gas by the supply amount control unit.
- a characteristic database in which the characteristic of the coating and the supply amount of the material supply gas are associated with each other is generated, and the supply amount control unit includes the characteristic and the characteristic of the coating to be formed. It is desirable to control the supply amount of the material supply gas based on a database. According to such a plasma spraying apparatus, the supply amount control unit controls the supply amount of the material supply gas based on the characteristics of the film to be formed and the characteristic database generated in advance. Easy.
- the supply amount control unit observes at least one of a particle velocity and a particle temperature of the sprayed material sprayed on the base material, and observes the observation result and the coating of the coating to be formed. It is desirable to control the supply amount of the material supply gas based on the characteristics. According to such a plasma spraying apparatus, since the supply amount of the material supply gas is controlled based on the observation result obtained by observing at least one of the particle velocity and the particle temperature of the sprayed material sprayed on the base material, it is more accurate. Therefore, it is possible to form a film having desired characteristics.
- a plasma spraying apparatus capable of forming a coating by changing the supply conditions of the spraying material.
- FIG. 2 is a cross-sectional view taken along the line AA in FIG. It is a figure which shows schematic structure of the twin cathode type
- FIG. 1 shows a schematic configuration of a composite torch type plasma spraying apparatus 100 described as an embodiment of the present invention.
- the main torch 1 includes a main anode 3, a main mantle 4 surrounding the main anode 3, an insulator 27 that insulates the main anode 3 and the main mantle 4, and the like, and is concentrically formed by the main mantle 4 and the insulator 27. Is retained.
- the main anode 3 is formed of a material having excellent electrical conductivity, for example, a metal such as copper.
- the main anode 3 includes a material feed pipe 19 having a thermal spray material discharge hole 19a at the center of the tip of the central axis C1.
- An automatic material supply device 30 for supplying a material supply gas 20 including a thermal spray material 20a is connected to the material supply pipe 19, and the automatic material supply device 30 can be controlled by a control device 31 as a supply amount control unit. It is.
- the main mantle 4 includes an opening (nozzle portion) 4a at the tip, and a tapered portion 4b provided between the opening 4a and the insulator 27.
- the insulator 27 has a main plasma gas inlet 5 through which the main plasma gas 6 is introduced, and a swirl flow forming portion 50 for the introduced main plasma gas 6.
- the main plasma gas 6 is introduced into the gas annular chamber 51, passes through the four swirl flow forming holes 52, and passes through the inner wall 53 (between the inner wall 53 and the main anode 3) of the insulator 27. It flows toward the opening 4a of the main mantle 4 so as to turn in the space.
- the swirl flow forming holes 52 may be arranged in a single number or in a plurality, and in the case where a plurality of the swirl flow holes 52 are arranged, the swirl flow forming holes 52 should be evenly arranged around the central axis C1. Is preferred.
- the positive terminal of the main power supply 7 is connected to the main anode 3, and the negative terminal of the main power supply 7 is connected to the main mantle 4 via the switch 8.
- the sub torch 2 includes a sub cathode (sub torch starting electrode) 10, a sub jacket 11 surrounding the sub cathode 10, an insulator 28 that insulates the sub cathode 10 and the sub jacket 11, and the like.
- the axis C2, that is, the central axis C2 of the sub-cathode 10, is arranged so as to intersect the central axis C1 of the main torch 1, that is, the central axis C1 of the main anode 3, and at a substantially right angle in front of the main anode 3 and the sub-cathode 10.
- the sub-cathode 10 is made of a material having a high melting point, such as tungsten.
- the sub cathode 10 is held concentrically by the sub jacket 11 and the insulator 28.
- the auxiliary mantle 11 has a hole 11a at the tip.
- the insulator 28 has a sub-plasma gas inlet 12 for introducing the sub-plasma gas 13 and a swirl flow forming portion 50 similar to the insulator 27 of the main torch 1.
- the positive terminal of the sub power supply 14 is connected to the sub jacket 11
- the negative terminal of the sub power supply 14 is connected to the sub cathode 10 through the switch 15, and is connected to the negative terminal of the main power supply 7 through the switch 9. Is done.
- the thermal spray material 20a indicates, for example, a conductive material such as metal, an insulating material such as ceramics, and the like.
- An inert gas that can be turned into plasma such as argon or helium, is introduced into the main torch 1 from the main plasma gas inlet 5 as a main plasma gas 6 to form a swirling flow of the main plasma gas 6.
- a high frequency voltage is applied between the main anode 3 and the main mantle 4 by the main power source 7 with the switch 9 opened and the switch 8 closed.
- a main plasma arc 16 is formed from the tip of the main anode 3 toward the opening 4 a of the main mantle 4, whereby the main plasma gas 6 is heated and becomes plasma from the opening 4 a of the main mantle 4. Released.
- an inert gas that can be turned into plasma such as argon or helium
- a secondary plasma gas 13 is introduced as a secondary plasma gas 13 from the secondary plasma gas inlet 12 into the secondary torch 2 to form a swirling flow of the secondary plasma gas 13.
- a high frequency voltage is applied between the sub cathode 10 and the sub jacket 11 by the sub power source 14 with the switch 15 closed.
- a sub-plasma arc 17 is formed from the tip 10a of the sub-cathode 10 toward the hole 11a of the sub-jacket 11, whereby the sub-plasma gas 13 is heated and becomes plasma to be emitted from the hole 11a of the sub-clutch 11. Is done.
- the central axis C1 of the main anode 3 and the central axis C2 of the sub-cathode 10 intersect outside the main torch 1 and the sub-torch 2 in front of the main anode 3 and the sub-cathode 10, so the switch 9 is closed,
- a conductive path is formed by the hairpin-shaped plasma 18 from the tip 10 a of the sub-cathode 10 to the anode point of the main anode 3.
- the structure of the main torch 1 and the main plasma gas 6 introduced, and the structure of the sub-torch 2 and the amount of the sub-plasma gas 13 introduced into the sub-torch 2 are appropriately set as shown in FIG.
- the plasma flame 23 can be formed substantially coaxially with the main torch 1.
- the material spray pipe 19 is controlled by a control device 31 together with a material supply gas 20 for supplying a thermal spray material 20a, which is an inert gas that can be turned into plasma, such as argon or helium.
- the automatic material supply device 30 is fed in.
- the thermal spray material 20 a discharged together with the material supply gas 20 from the material feed pipe 19 through the opening 4 a of the main mantle 4 is formed on the central axis C 1 of the main anode 3 by the main anode 3 and the sub-cathode 10.
- the plasma 18 is supplied to the axial center and is melted by the plasma flame 23.
- the automatic material supply apparatus 30 can control the supply amount of the material supply gas 20 independently of the supply amount of the thermal spray material 20a.
- the melt 21 in which the thermal spray material 20 a is melted proceeds toward the base material 25 together with the plasma flame 23.
- the gas is selectively ejected from the plasma trimming portion 22 provided on the connection pipe 26 to the part of the plasma flame containing the melt immediately before the base material 25, so that an inappropriate state is obtained.
- the plasma flame may be changed to an appropriate shape simultaneously with the removal of the melt. As a result, a melt suitable for film formation can be deposited on the base material 25 at a more appropriate temperature, and the coating 24 of the dense thermal spray material 20a with fewer pores can be efficiently formed.
- FIG. 3 is a diagram showing a schematic configuration of a twin cathode type plasma spraying apparatus 101 as another embodiment of the present invention.
- the plasma spraying apparatus 101 is a twin cathode type plasma spraying apparatus 101 in which an electrode in a main torch is a main anode (anode) and an electrode in a sub torch is a sub cathode (cathode).
- the configuration of the main torch 1 and the sub-torch 2 provided in the twin cathode type plasma spraying apparatus 101 is the same as that of the main torch 1 and the sub-torch 2 in the composite torch type plasma spraying apparatus 100, and thus the description thereof is omitted here.
- the positive terminal of the main power supply 7 is connected to the sub jacket 11 via the main anode 3, the switch 55 and the switch 45, and the negative terminal of the main power supply 7 is connected to the main jacket 4 via the switch 8.
- the positive terminal of the sub torch 2 from the sub power source 42 is connected to the sub jacket 11 through the switch 45, and the negative terminal of the sub torch 2 from the sub power source 42 is connected to the sub cathode 10 through the switch 46.
- it is connected to the negative terminal of the main power supply 7 through the switch 9.
- another sub-torch 39 is disposed at a position facing the sub-torch 2 with respect to the central axis C1 of the main torch 1.
- the sub torch 39 includes a sub cathode (sub torch starting electrode) 40, a sub jacket 41 surrounding the sub cathode 40, an insulator 47 that insulates the sub cathode 40 and the sub jacket 41, and the like.
- the axis C2, that is, the center axis C2 of the sub-cathode 40 is arranged so as to intersect with the center axis C1 of the main torch 1, that is, the center axis C1 of the main anode 3, in front of the main anode 3 and the sub-cathode 40. .
- the sub-cathode 40 is made of a material having a high melting point, such as tungsten.
- the sub-cathode 40 is concentrically held by a sub-jacket 41 and an insulator 47.
- the auxiliary mantle 41 is provided with a hole 41a at the tip.
- the insulator 47 has a sub-plasma gas inlet 48 for introducing the sub-plasma gas 49 and a swirl flow forming portion 50 similar to the insulator 27 of the main torch 1.
- the positive terminal of the sub torch 39 from the sub power source 42 is connected to the sub jacket 41 via the switch 44, and the negative terminal of the sub torch 39 from the sub power source 14 is connected to the sub cathode 40 via the switch 43, Further, it is connected to the negative terminal of the main power supply 7 through the switches 9 and 46.
- An inert gas that can be turned into plasma such as argon or helium, is introduced into the main torch 1 from the main plasma gas inlet 5 as a main plasma gas 6 to form a swirling flow of the main plasma gas 6.
- a high frequency voltage is applied between the main anode 3 and the main mantle 4 by the main power source 7 with the switch 9 opened and the switch 8 closed.
- a main plasma arc 16 is formed from the tip of the main anode 3 toward the opening 4 a of the main mantle 4, whereby the main plasma gas 6 is heated and becomes plasma from the opening 4 a of the main mantle 4. Released.
- an inert gas that can be turned into plasma such as argon or helium
- a secondary plasma gas 13 is introduced as a secondary plasma gas 13 from the secondary plasma gas inlet 12 into the secondary torch 2 to form a swirling flow of the secondary plasma gas 13.
- a high frequency voltage is applied between the sub cathode 10 and the sub jacket 11 by the sub power source 42.
- a sub-plasma arc 17 is formed from the tip 10a of the sub-cathode 10 toward the hole 11a of the sub-jacket 11, whereby the sub-plasma gas 13 is heated and becomes plasma to be emitted from the hole 11a of the sub-clutch 11. Is done.
- the switch 9 is closed after the switch 9 is closed.
- a conductive path is formed by the hairpin-shaped plasma 18 from the tip 10 a of the sub-cathode 10 to the anode point of the main anode 3.
- an inert gas that can be turned into plasma such as argon or helium
- a secondary plasma gas 49 into the secondary torch 39 is introduced as a secondary plasma gas 49 into the secondary torch 39 from the secondary plasma gas inlet 48 to form a swirling flow of the secondary plasma gas 49.
- a high frequency voltage is applied between the sub cathode 40 and the sub jacket 41 by the sub power source 42 with the switches 43 and 44 closed.
- a sub-plasma arc 56 is formed from the tip 40a of the sub-cathode 40 toward the hole 41a of the sub-cannula 41, whereby the sub-plasma gas 49 is heated and becomes plasma and is emitted from the hole 41a of the sub-clutch 41. Is done.
- the center axis C1 of the main anode 3 and the center axis C2 of the sub-cathode 40 intersect outside the main torch 1 and the sub-torch 39 in front of the main anode 3 and the sub-cathode 40.
- the generated plasma intersects the hairpin-shaped plasma 18 extending from the tip 10 a of the sub-cathode 10 to the anode point of the main anode 3.
- a conductive path is formed by the T-shaped plasma 18 from the tips 10a, 40a of the sub-cathodes 10, 40 to the anode point of the main anode 3, and the main path is formed.
- a plasma flame 23 is formed on the same axis of the torch 1.
- An automatic material supply device 30 in which a gas obtained by mixing a spray material 20 a with a material supply gas 20, which is an inert gas that can be turned into plasma, such as argon and helium, is controlled by a control device 31. Sent in.
- the thermal spray material 20a discharged from the material inlet tube 19 through the opening 4a of the main jacket 4 is the axial center of the plasma 18 formed on the central axis C1 of the main anode 3 by the main anode 3 and the sub-cathode 10. And is melted by the plasma flame 23.
- the melt 21 in which the thermal spray material 20 a is melted proceeds toward the base material 25 together with the plasma flame 23.
- the gas is selectively ejected from the plasma trimming portion 22 provided on the connection pipe 26 to the part of the plasma flame containing the melt immediately before the base material 25, so that an inappropriate state is obtained.
- the plasma flame may be changed to an appropriate shape simultaneously with the removal of the melt. As a result, a melt suitable for film formation can be deposited on the base material 25 at a more appropriate temperature, and the coating 24 of the dense thermal spray material 20a with fewer pores can be efficiently formed.
- two sub-torches are provided in plasma spraying apparatus 101, but three or more sub-torches may be provided.
- these sub-torches are arranged such that the central axis C2 of the electrode of the sub-torch intersects the front of the main anode 3 and at one point of the central axis C1 outside the main torch 1.
- the sub-torches are arranged so that the central axis of each sub-torch intersects the central axis of the main torch 1 at the intersection. It is preferable.
- the main electrode is a cathode that is a starting point of a plasma arc
- the temperature becomes high and the main electrode melts or is supplied.
- the main electrode is used as an anode.
- the spraying material discharge hole 19a is blocked by the spraying material by generating a swirling flow with the main plasma gas supplied into the main torch having the main electrode and suppressing the adhesion of the spraying material into the main torch. Is preventing.
- the thermal spray material in order to prevent adhesion of the thermal spray material to the main electrode and the main torch, in order to avoid adhesion of the thermal spray material to the main electrode, it is inclined with respect to the central axis of the main electrode where the plasma arc is formed.
- the thermal spray material was supplied from the direction to perform, it became possible to supply the thermal spray material along the central axis of the main electrode as in the plasma spraying apparatuses 100 and 101 of the present embodiment.
- the thermal spray material can be easily supplied to the center of the plasma flame, and the thermal spray material can be more reliably brought to the high temperature portion of the plasma flame and can be prevented from being scattered to the periphery. That is, the thermal spray material can be stably supplied to the high temperature part of the plasma flame.
- FIG. 4 is an image showing an example of a particle velocity measured by changing the supply amount Qf of the material supply gas 20.
- FIG. 5 is a graph showing the result of measuring the particle velocity of the thermal spray material 20a when the supply amount Qf of the material supply gas 20 is changed.
- the particle velocity when the particle velocity is measured by photographing a plasma flame at a position 100 mm from the opening 4 a of the main torch 1 with a high-speed camera or the like, the particle velocity differs depending on the supply amount Qf of the material supply gas 20. ing.
- the particle velocities at the supply amounts Qf of the plurality of material supply gases 20 were measured, as shown in FIG. 5, it was found that the particle velocities increased as the supply amount Qf of the material supply gases 20 was increased.
- FIG. 6 is a cross-sectional view showing the coating 24 formed by changing the supply amount Qf of the material supply gas 20 between 1.0 l / min and 10.0 l / min.
- the coating 24 becomes thinner than when the supply amount of the material supply gas 20 is 1.0 l / min. From this result, it can be seen that the thickness can be changed as a characteristic of the film 24 formed by controlling the supply amount Qf of the material supply gas 20. That is, the supply amount of the material supply gas 20 is increased to form the thin film 24 faster, or the supply amount of the material supply gas 20 is decreased to form the thick film 24. Is possible.
- FIG. 7 is a graph showing the relationship between the supply amount Qf of the material supply gas 20 and the hardness of the coating 24 to be formed.
- the inventor made it possible to change the hardness as a characteristic of the film 24 formed by controlling the supply amount Qf of the material supply gas 20. That is, the supply amount Qf of the material supply gas 20 is increased to form the coating 24 with low hardness more quickly, or the supply amount Qf of the material supply gas 20 is decreased to form the coating 24 with high hardness. Made possible.
- the control of the automatic material supply device 30 by the control device 31 is, for example, a database based on data as shown in the graphs of FIGS. 5 and 7, that is, the thickness or hardness of the film 24 to be formed and the supply amount of the material supply gas 20.
- At this time at least one of the particle velocity and the particle temperature of the thermal spray material 20a sprayed on the substrate 25 is observed by a CCD camera or the like, and the control device is based on the observation result and the thickness or hardness of the coating 24 to be formed.
- the supply amount of the material supply gas 20 is controlled by 31, more accurate control is possible, and the coating 24 having a desired thickness or hardness can be formed.
- FIG. 8 is a diagram showing a schematic configuration of the plasma spraying apparatus 102 in which the main torch 1 and the sub torch 2 are integrated.
- the plasma spraying apparatuses 100 and 101 in which the main torch 1 and the sub torch 2 are separately separated have been described.
- FIG. It may be an integrated plasma spraying apparatus 102 of the main torch 1 and the sub torches 2 and 39 in which the sub torches 2 and 39 are integrally provided via the insulator 60 on the outlet side.
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Abstract
Description
本発明は、主陽極を備える主トーチ及び副陰極を備える副トーチを有し、主陽極と副陰極との間に形成されるプラズマアークにより溶融された溶射材料を基材に吹き付けて皮膜を形成するプラズマ溶射装置に関する。 The present invention has a main torch having a main anode and a sub torch having a sub-cathode, and forms a film by spraying a sprayed material melted by a plasma arc formed between the main anode and the sub-cathode onto a substrate. The present invention relates to a plasma spraying apparatus.
従来、主陽極を備える主トーチ及び副陰極を備える副トーチを有するプラズマ溶射装置において、主トーチの主陽極の中心軸の先端中央に材料吐出孔を設け、材料吐出孔から主電極の中心軸に沿うように溶射材料を供給し、溶射材料を効率よく溶融させて基材に吹き付け、気孔が少ない緻密な溶射材料の膜を形成することができるプラズマ溶射装置が知られている(例えば、特許文献1、2参照)。 Conventionally, in a plasma spraying apparatus having a main torch with a main anode and a sub-torch with a sub-cathode, a material discharge hole is provided at the center of the center axis of the main anode of the main torch, and the material discharge hole extends from the center axis of the main electrode. There is known a plasma spraying apparatus that can supply a spraying material along the surface, efficiently melt the spraying material and spray it onto a base material, and form a dense spraying material film with few pores (for example, Patent Documents) 1 and 2).
上記のようなプラズマ溶射装置は、主トーチの電極を陽極とすることにより、高温になるプラズマアークの始点をなす陰極が副トーチ側となるので、主電極側への溶射材料の付着が抑えられるため、主電極に材料吐出孔を設けることが可能である。すなわち、以前は主電極への溶射材料の付着を避けるために、プラズマアークが形成される主電極の中心軸に対して傾斜する方向から溶射材料を供給していたが、主電極の中心軸に沿うように溶射材料を供給することができる。これにより、溶射材料がプラズマ炎の中心に供給されやすくなり、プラズマ炎の高温部に溶射材料をより確実に至らせるとともに周辺への飛散を抑えることが可能となった。すなわち、溶射材料をプラズマ炎の高温部に安定して供給することができるのである。そして、発明者はプラズマ炎の高温部に安定して溶射材料を供給できることにより、これまでパラメータとして扱うことができなかった溶射材料の供給条件をパラメータとして皮膜の特性を制御できると考えた。
そこで本発明は、溶射材料の供給条件を異ならせて皮膜を形成することが可能なプラズマ溶射装置を提供することを目的とする。
In the plasma spraying apparatus as described above, by using the electrode of the main torch as the anode, the cathode that forms the starting point of the plasma arc that becomes a high temperature is on the sub-torch side, so that the adhesion of the sprayed material to the main electrode side can be suppressed. Therefore, it is possible to provide a material discharge hole in the main electrode. That is, in the past, in order to avoid adhesion of the thermal spray material to the main electrode, the thermal spray material was supplied from a direction inclined with respect to the central axis of the main electrode where the plasma arc is formed. A thermal spray material can be supplied along. As a result, the thermal spray material can be easily supplied to the center of the plasma flame, and the thermal spray material can be more reliably brought to the high temperature portion of the plasma flame and can be prevented from being scattered to the periphery. That is, the thermal spray material can be stably supplied to the high temperature part of the plasma flame. And the inventor thought that the characteristic of a film | membrane could be controlled by using as a parameter the supply conditions of the thermal spray material which could not be handled as a parameter so far by being able to supply a thermal spray material stably to the high temperature part of a plasma flame.
Therefore, an object of the present invention is to provide a plasma spraying apparatus capable of forming a film by changing the supply conditions of the spraying material.
前記目的を達成するために本発明のプラズマ溶射装置は、中心軸に沿って溶射材料を、当該溶射材料を送給するための材料供給ガスと共に送入する材料送入管を有する主陽極を備え、前記中心軸に沿って主プラズマガスを導入する主トーチと、中心軸が前記主陽極の前記中心軸と交差する副陰極を備える副トーチと、を有し、前記主陽極と前記副陰極との間に形成されるプラズマアークと、前記主陽極の前記中心軸に沿うように導入される前記主プラズマガスと、前記副陰極の前記中心軸に沿い前記主陽極の前記中心軸に向かうように導入される前記副プラズマガスと、により前記主陽極の前記中心軸に沿うように形成されるプラズマ炎に、前記材料送入管から前記材料供給ガスと共に前記溶射材料が送入されて前記溶射材料が溶融され基材に吹き付けられて前記溶射材料の皮膜を形成するプラズマ溶射装置において、前記材料供給ガスの供給量を制御する供給量制御部を備えることを特徴とするプラズマ溶射装置である。 In order to achieve the above object, a plasma spraying apparatus of the present invention includes a main anode having a material feeding pipe for feeding a sprayed material along a central axis together with a material supply gas for feeding the sprayed material. A main torch for introducing a main plasma gas along the central axis, and a sub torch including a sub cathode whose central axis intersects the central axis of the main anode, the main anode and the sub cathode A plasma arc formed between the main anode, the main plasma gas introduced along the central axis of the main anode, and the central axis of the main anode along the central axis of the sub-cathode. The sprayed material is fed together with the material supply gas from the material feeding pipe into the plasma flame formed along the central axis of the main anode by the introduced subplasma gas. Is melted In plasma spraying apparatus for forming a coating of the spray material is sprayed on a plasma spraying apparatus, characterized in that it comprises a supply amount controller for controlling the supply amount of the material supply gas.
このようなプラズマ溶射装置によれば、溶射材料を主陽極の中心軸に沿うように吹き付けて基材に皮膜を形成する材料供給ガスの供給量を制御する供給量制御部を備えているので、材料供給ガスの供給量を制御することにより基材上に到達する際の溶射材料の供給条件としての材料供給ガスの供給量を異ならせて皮膜を形成することが可能である。 According to such a plasma spraying device, since the spraying material is sprayed along the central axis of the main anode, the supply amount control unit for controlling the supply amount of the material supply gas for forming the coating on the base material is provided. By controlling the supply amount of the material supply gas, it is possible to form the coating by varying the supply amount of the material supply gas as the spraying material supply condition when reaching the substrate.
かかるプラズマ溶射装置であって、前記供給量制御部は、形成される前記皮膜の特性を変えるべく前記材料供給ガスの供給量を制御することが望ましい。
このようなプラズマ溶射装置によれば、供給量制御部により材料供給ガスの供給量を制御して互いに特性の異なる皮膜を形成することが可能である。
かかるプラズマ溶射装置であって、前記供給量制御部は、前記材料供給ガスの供給量を前記溶射材料の供給量とは独立に制御することが望ましい。
In this plasma spraying apparatus, it is preferable that the supply amount control unit controls the supply amount of the material supply gas so as to change the characteristics of the coating to be formed.
According to such a plasma spraying apparatus, it is possible to form coatings having different characteristics by controlling the supply amount of the material supply gas by the supply amount control unit.
In this plasma spraying apparatus, it is preferable that the supply amount control unit controls the supply amount of the material supply gas independently of the supply amount of the thermal spray material.
また、前記皮膜の前記特性は、形成される前記皮膜の厚みであることが望ましい。
このようなプラズマ溶射装置によれば、供給量制御部により材料供給ガスの供給量を制御して互いに異なる厚みの皮膜を形成することが可能である。
The characteristic of the film is preferably the thickness of the film to be formed.
According to such a plasma spraying apparatus, it is possible to form coatings having different thicknesses by controlling the supply amount of the material supply gas by the supply amount control unit.
かかるプラズマ溶射装置であって、前記皮膜の前記厚みを厚くするときほど、前記供給量制御部の制御により前記材料供給ガスの供給量を少なくすることが望ましい。
このようなプラズマ溶射装置によれば、供給量制御部により材料供給ガスの供給量を少なくすることにより、より厚い皮膜を形成することが可能であり、材料供給ガスの供給量を大きくすることにより、より薄い皮膜を形成することが可能である。
In such a plasma spraying apparatus, it is desirable that the supply amount of the material supply gas is reduced by the control of the supply amount control unit as the thickness of the coating is increased.
According to such a plasma spraying apparatus, it is possible to form a thicker film by reducing the supply amount of the material supply gas by the supply amount control unit, and by increasing the supply amount of the material supply gas. It is possible to form a thinner film.
かかるプラズマ溶射装置であって、前記皮膜の前記特性は、形成される前記皮膜の硬度としてもよい。
このようなプラズマ溶射装置によれば、供給量制御部により材料供給ガスの供給量を制御して互いに異なる硬度の皮膜を形成することが可能である。
In such a plasma spraying apparatus, the characteristic of the film may be the hardness of the film to be formed.
According to such a plasma spraying apparatus, it is possible to form coatings having different hardnesses by controlling the supply amount of the material supply gas by the supply amount control unit.
かかるプラズマ溶射装置であって、前記皮膜の前記硬度を高くするときほど、前記供給量制御部の制御により前記材料供給ガスの供給量を少なくすることが望ましい。
このようなプラズマ溶射装置によれば、供給量制御部により材料供給ガスの供給量を少なくすることにより、より硬度が高い皮膜を形成することが可能であり、材料供給ガスの供給量を多くすることにより、より硬度が低い皮膜を形成することが可能である。
In such a plasma spraying apparatus, it is desirable that the supply amount of the material supply gas is reduced by the control of the supply amount control unit as the hardness of the coating is increased.
According to such a plasma spraying apparatus, it is possible to form a coating with higher hardness by reducing the supply amount of the material supply gas by the supply amount control unit, and increase the supply amount of the material supply gas. Thus, it is possible to form a film having a lower hardness.
かかるプラズマ溶射装置であって、前記皮膜の前記特性と前記材料供給ガスの供給量とを対応付けた特性データベースを生成し、前記供給量制御部は、形成すべき前記皮膜の前記特性と前記特性データベースとに基づいて前記材料供給ガスの供給量を制御することが望ましい。
このようなプラズマ溶射装置によれば、供給量制御部は、形成すべき皮膜の特性と予め生成した特性データベースとに基づいて、材料供給ガスの供給量を制御するので、皮膜の特性の制御が容易である。
In this plasma spraying apparatus, a characteristic database in which the characteristic of the coating and the supply amount of the material supply gas are associated with each other is generated, and the supply amount control unit includes the characteristic and the characteristic of the coating to be formed. It is desirable to control the supply amount of the material supply gas based on a database.
According to such a plasma spraying apparatus, the supply amount control unit controls the supply amount of the material supply gas based on the characteristics of the film to be formed and the characteristic database generated in advance. Easy.
かかるプラズマ溶射装置であって、前記供給量制御部は、前記基材に吹き付けられる前記溶射材料の粒子速度と粒子温度との少なくともいずれか一方を観測し、観測結果と形成すべき前記皮膜の前記特性とに基づいて前記材料供給ガスの供給量を制御することが望ましい。
このようなプラズマ溶射装置によれば、基材に吹き付けられる溶射材料の粒子速度と粒子温度との少なくともいずれか一方を観測した観測結果に基づいて材料供給ガスの供給量を制御するので、より正確な制御が可能であり所望の特性を備えた皮膜を形成することが可能である。
In this plasma spraying apparatus, the supply amount control unit observes at least one of a particle velocity and a particle temperature of the sprayed material sprayed on the base material, and observes the observation result and the coating of the coating to be formed. It is desirable to control the supply amount of the material supply gas based on the characteristics.
According to such a plasma spraying apparatus, since the supply amount of the material supply gas is controlled based on the observation result obtained by observing at least one of the particle velocity and the particle temperature of the sprayed material sprayed on the base material, it is more accurate. Therefore, it is possible to form a film having desired characteristics.
本発明によれば、溶射材料の供給条件を変更して皮膜を形成することが可能なプラズマ溶射装置を提供することができる。 According to the present invention, it is possible to provide a plasma spraying apparatus capable of forming a coating by changing the supply conditions of the spraying material.
以下、本発明に本発明に係るプラズマ溶射装置の好適な実施形態を、添付図面を参照して詳細に説明する。 Hereinafter, preferred embodiments of the plasma spraying apparatus according to the present invention will be described in detail with reference to the accompanying drawings.
まず、本発明のプラズマ溶射装置として、主トーチと副トーチとを備える複合トーチ型プラズマ溶射装置について説明する。本実施の形態の、主トーチと副トーチとを備える複合トーチ型プラズマ溶射装置は、主トーチに主陽極(アノード)を備え、副トーチに副陰極(カソード)を備えた複合トーチ型プラズマ溶射装置である。図1に、本発明の一実施形態として説明する複合トーチ型プラズマ溶射装置100の概略構成を示す。
First, a composite torch type plasma spraying apparatus including a main torch and a sub torch will be described as the plasma spraying apparatus of the present invention. The composite torch type plasma spraying apparatus including the main torch and the sub torch according to the present embodiment includes the main torch including the main anode (anode) and the sub torch including the sub cathode (cathode). It is. FIG. 1 shows a schematic configuration of a composite torch type
主トーチ1は、主陽極3と、該主陽極3を囲む主外套4と、主陽極3と主外套4とを絶縁する絶縁体27などを備え、主外套4と、絶縁体27によって同心に保持されている。
主陽極3は、電気伝導率に優れた材料、例えば、銅などの金属により形成されている。主陽極3は、中心軸C1の先端中央に溶射材料吐出孔19aを有する材料送入管19を備えている。材料送入管19には、溶射材料20aを含む材料供給ガス20を送入する自動材料供給装置30が接続されており、自動材料供給装置30は供給量制御部としての制御装置31により制御可能である。
The
The
主外套4は、先端部の開口部(ノズル部)4aと、該開口部4aと絶縁体27との間に設けられたテーパー部4bとを備えている。
The
絶縁体27は、主プラズマガス6を導入する主プラズマガス導入口5と、導入した主プラズマガス6の旋回流形成部50を有している。主プラズマガス6は、図2に示すように、ガス環状室51へ導入され、4個の旋回流形成孔52を通って、絶縁体27の内壁53(内壁53と主陽極3との間の空間)を旋回するようにして主外套4の開口部4aに向かって流れる。なお、上記旋回流形成孔52は、1個配置されていても、複数個配置されていてもよく、複数個配置されている場合には、中心軸C1を中心に均等に配置されていることが好ましい。
The
図1に示すように、主電源7の正端子は主陽極3に接続され、主電源7の負端子はスイッチ8を介して主外套4に接続される。
As shown in FIG. 1, the positive terminal of the
副トーチ2は、副陰極(副トーチ起動電極)10と、該副陰極10を囲む副外套11と、副陰極10と副外套11とを絶縁する絶縁体28などを備え、副トーチ2の中心軸C2、すなわち副陰極10の中心軸C2は、主トーチ1の中心軸C1、すなわち主陽極3の中心軸C1と、主陽極3と副陰極10との前方でほぼ直角に交差するように配置されている。
副陰極10は、融点が高い材料、例えば、タングステンなどの材料により形成されている。副陰極10は、副外套11と、絶縁体28によって同心に保持されている。
The
The sub-cathode 10 is made of a material having a high melting point, such as tungsten. The
副外套11は、先端部に孔11aを備えている。絶縁体28は、副プラズマガス13を導入する副プラズマガス導入口12と、主トーチ1の絶縁体27と同様の旋回流形成部50を有している。
The
副電源14の正端子は、副外套11に接続され、副電源14の負端子は、スイッチ15を介して副陰極10に接続され、また、スイッチ9を介して主電源7の負端子に接続される。
The positive terminal of the
次に、複合トーチ型プラズマ溶射装置100を用いて、溶射材料20aをプラズマ溶射する方法について説明する。ここで、溶射材料20aとは、例えば、金属等の導電性材料、セラミックス等の絶縁性材料などを示している。
アルゴン、ヘリウムなどのプラズマ化が可能な不活性ガスを主プラズマガス6として、主プラズマガス導入口5から主トーチ1内に導入し、主プラズマガス6の旋回流を形成させる。また、スイッチ9を開き、スイッチ8を閉じた状態で、主電源7により主陽極3と主外套4との間に高周波電圧を印加する。その結果、主陽極3の先端から主外套4の開口部4aの方に向かう主プラズマアーク16が形成され、これにより主プラズマガス6が加熱され、プラズマとなって主外套4の開口部4aから放出される。
Next, a method for plasma spraying the
An inert gas that can be turned into plasma, such as argon or helium, is introduced into the
加えて、アルゴン、ヘリウムなどのプラズマ化が可能な不活性ガスを副プラズマガス13として、副プラズマガス導入口12から副トーチ2内に導入し、副プラズマガス13の旋回流を形成させる。また、スイッチ15を閉じた状態で、副電源14により副陰極10と副外套11との間に高周波電圧を印加する。その結果、副陰極10の先端10aから副外套11の孔11aの方に向かう副プラズマアーク17が形成され、これにより副プラズマガス13が加熱され、プラズマとなって副外套11の孔11aから放出される。
In addition, an inert gas that can be turned into plasma, such as argon or helium, is introduced as a
主陽極3の中心軸C1と副陰極10の中心軸C2は、主陽極3と副陰極10の前方において、主トーチ1及び副トーチ2の外部で交差するため、スイッチ9を閉じ、スイッチ8,15を開くと、副陰極10の先端10aから主陽極3の陽極点に至るヘアピン状のプラズマ18による導電路が形成される。
The central axis C1 of the
この場合、主トーチ1の構造と導入される主プラズマガス6、及び副トーチ2の構造と副トーチ2に導入される副プラズマガス13の量を適切に設定することにより、図1に示されたように、主トーチ1のほぼ同軸上にプラズマ炎23を形成することができる。
In this case, the structure of the
材料送入管19には、溶射材料20aが、アルゴン、ヘリウムなどのプラズマ化が可能な不活性ガスであって当該溶射材料20aを送給するための材料供給ガス20と共に,制御装置31により制御された自動材料供給装置30から送入される。材料送入管19から主外套4の開口部4aを介して材料供給ガス20と共に吐出された溶射材料20aは、主陽極3と副陰極10により、主陽極3の中心軸C1上に形成されるプラズマ18の軸中心に供給され、プラズマ炎23によって溶融される。なお、自動材料供給装置30は、材料供給ガス20の供給量を溶射材料20aの供給量とは独立に制御できることが好ましい。
The
溶射材料20aが溶融された溶融物21は、プラズマ炎23とともに基材25に向かって進行する。このとき、基材25の直前で、連結管26上に設けられたプラズマトリミング部22から、溶融物を含むプラズマ炎の一部に対して選択的にガスを噴出することで、不適切な状態の溶融物を除去すると同時にプラズマ炎を適切な形状に変化させてもよい。これにより、成膜に適した溶融物をより適切な温度の基材25に堆積させ、気孔が少ない緻密な溶射材料20aの皮膜24を効率よく形成することができる。
The
上記実施の形態では、主トーチ1と副トーチ2とが1つずつ設けられたプラズマ溶射装置100を例に挙げて説明したが、1つの主トーチと複数の副トーチとを備えたプラズマ溶射装置であっても構わない。たとえば、図3に示すような、主トーチと2つの副トーチを備えるプラズマ溶射装置101であっても構わない。図3は、本発明の他の一実施形態としてのツインカソード型プラズマ溶射装置101の概略構成を示す図である。
プラズマ溶射装置101は、主トーチにおける電極が主陽極(アノード)であって、副トーチにおける電極が副陰極(カソード)であるツインカソード型プラズマ溶射装置101である。
In the above embodiment, the
The
ツインカソード型プラズマ溶射装置101が備える主トーチ1及び副トーチ2の構成は、複合トーチ型プラズマ溶射装置100における主トーチ1及び副トーチ2と同じであるため、ここでは説明を省略する。
なお、主電源7の正端子は、主陽極3及びスイッチ55、スイッチ45を介して副外套11に接続され、主電源7の負端子はスイッチ8を介して主外套4に接続される。また、副電源42からの副トーチ2の正端子は、スイッチ45を介して副外套11に接続され、副電源42からの副トーチ2の負端子は、スイッチ46を介して副陰極10に接続され、また、スイッチ9を介して主電源7の負端子に接続される。
The configuration of the
The positive terminal of the
本実施の形態においては、主トーチ1の中心軸C1に対して副トーチ2に対向する位置に、別の副トーチ39を配置させている。副トーチ39は、副陰極(副トーチ起動電極)40と、該副陰極40を囲む副外套41と、副陰極40と副外套41とを絶縁する絶縁体47などを備え、副トーチ39の中心軸C2、すなわち副陰極40の中心軸C2は、主トーチ1の中心軸C1、すなわち主陽極3の中心軸C1と、主陽極3と副陰極40との前方で交差するように配置されている。
In the present embodiment, another sub-torch 39 is disposed at a position facing the sub-torch 2 with respect to the central axis C1 of the
副陰極40は、融点が高い材料、例えば、タングステンなどの材料により形成されている。副陰極40は、副外套41と、絶縁体47によって同心に保持されている。
The sub-cathode 40 is made of a material having a high melting point, such as tungsten. The sub-cathode 40 is concentrically held by a sub-jacket 41 and an
副外套41は、先端部に孔41aを備えている。絶縁体47は、副プラズマガス49を導入する副プラズマガス導入口48と、主トーチ1の絶縁体27と同様の旋回流形成部50を有している。
The
副電源42からの副トーチ39の正端子は、スイッチ44を介して副外套41に接続され、副電源14からの副トーチ39の負端子は、スイッチ43を介して副陰極40に接続され、また、スイッチ9,46を介して主電源7の負端子に接続される。
The positive terminal of the
次に、ツインカソード型プラズマ溶射装置101を用いて溶射材料をプラズマ溶射する方法について説明する。
アルゴン、ヘリウムなどのプラズマ化が可能な不活性ガスを主プラズマガス6として、主プラズマガス導入口5から主トーチ1内に導入し、主プラズマガス6の旋回流を形成させる。また、スイッチ9を開き、スイッチ8を閉じた状態で、主電源7により主陽極3と主外套4との間に高周波電圧を印加する。その結果、主陽極3の先端から主外套4の開口部4aの方に向かう主プラズマアーク16が形成され、これにより主プラズマガス6が加熱され、プラズマとなって主外套4の開口部4aから放出される。
Next, a method for plasma spraying a thermal spray material using the twin cathode type
An inert gas that can be turned into plasma, such as argon or helium, is introduced into the
加えて、アルゴン、ヘリウムなどのプラズマ化が可能な不活性ガスを副プラズマガス13として、副プラズマガス導入口12から副トーチ2内に導入し、副プラズマガス13の旋回流を形成させる。また、スイッチ43,44を開き、スイッチ45,46を閉じた状態で、副電源42により副陰極10と副外套11との間に高周波電圧を印加する。その結果、副陰極10の先端10aから副外套11の孔11aの方に向かう副プラズマアーク17が形成され、これにより副プラズマガス13が加熱され、プラズマとなって副外套11の孔11aから放出される。
In addition, an inert gas that can be turned into plasma, such as argon or helium, is introduced as a
主陽極3の中心軸C1と副陰極10の中心軸C2は、主陽極3と副陰極10の前方において、主トーチ1及び副トーチ2の外部で交差するため、スイッチ9を閉じた後に、スイッチ45,46を開くと、副陰極10の先端10aから主陽極3の陽極点に至るヘアピン状のプラズマ18による導電路が形成される。
Since the center axis C1 of the
その後、アルゴン、ヘリウムなどのプラズマ化が可能な不活性ガスを副プラズマガス49として、副プラズマガス導入口48から副トーチ39内に導入し、副プラズマガス49の旋回流を形成させる。また、スイッチ43、44を閉じた状態で、副電源42により副陰極40と副外套41との間に高周波電圧を印加する。その結果、副陰極40の先端40aから副外套41の孔41aの方に向かう副プラズマアーク56が形成され、これにより副プラズマガス49が加熱され、プラズマとなって副外套41の孔41aから放出される。
Thereafter, an inert gas that can be turned into plasma, such as argon or helium, is introduced as a
主陽極3の中心軸C1と副陰極40の中心軸C2は、主陽極3と副陰極40の前方において、主トーチ1及び副トーチ39の外部で交差するため、副外套41の孔41aから放出されたプラズマは、副陰極10の先端10aから主陽極3の陽極点に至るヘアピン状のプラズマ18と交差する。この状態において、スイッチ55を閉じた後に、スイッチ44を開くと、副陰極10,40の先端10a,40aから主陽極3の陽極点に至るT字状のプラズマ18による導電路が形成され、主トーチ1の同軸上にプラズマ炎23が形成される。
The center axis C1 of the
材料送入管19には、アルゴン、ヘリウムなどのプラズマ化が可能な不活性ガスである材料供給ガス20に溶射材料20aが混合されたガスが、制御装置31により制御された自動材料供給装置30から送入される。材料送入管19から主外套4の開口部4aを介して吐出された溶射材料20aは、主陽極3と副陰極10により、主陽極3の中心軸C1上に形成されるプラズマ18の軸中心に供給され、プラズマ炎23によって溶融される。
An automatic
溶射材料20aが溶融された溶融物21は、プラズマ炎23とともに基材25に向かって進行する。このとき、基材25の直前で、連結管26上に設けられたプラズマトリミング部22から、溶融物を含むプラズマ炎の一部に対して選択的にガスを噴出することで、不適切な状態の溶融物を除去すると同時にプラズマ炎を適切な形状に変化させてもよい。これにより、成膜に適した溶融物をより適切な温度の基材25に堆積させ、気孔が少ない緻密な溶射材料20aの皮膜24を効率よく形成することができる。
The
なお、本実施の形態においては、プラズマ溶射装置101において副トーチを2つ設けることとしているが、副トーチを3つ以上設けてもよい。副トーチを2つ以上設ける場合には、これらの副トーチは、副トーチが有する電極の中心軸C2が、主トーチ1の外部において、主陽極3の前方かつ中心軸C1の一点で交差するように、配置されていることが好ましく、その交差する点を中心とした、中心軸C1に垂直な円の円周上に均等に配置されていることがより好ましい。また、プラズマ溶射装置101において副トーチを2つ以上設ける場合には、各副トーチの中心軸が上記交差する点で主トーチ1の中心軸に垂直に交差するように、各副トーチが配置されていることが好ましい。
In the present embodiment, two sub-torches are provided in
上記実施の形態にて説明した、プラズマ溶射装置100、101は、従来、主電極が、プラズマアークの始点となる陰極であったために高温となり、主電極が溶融する、或いは、供給された溶射材料が主電極に付着しまうことを防ぐため、主電極を陽極としている。更に、主電極を備える主トーチ内に供給する主プラズマガスにて旋回流を発生させ、主トーチ内への溶射材料の付着を抑えることにより、溶射材料吐出孔19aが溶射材料により塞がれることを防止している。
In the
このように主電極及び主トーチ内への溶射材料の付着を抑えることにより、従来、主電極への溶射材料の付着を避けるために、プラズマアークが形成される主電極の中心軸に対して傾斜する方向から溶射材料を供給していたが、本実施形態のプラズマ溶射装置100、101のように主電極の中心軸に沿うように供給することが可能となった。これにより、溶射材料がプラズマ炎の中心に供給されやすくなり、プラズマ炎の高温部に溶射材料をより確実に至らせるとともに周辺への飛散を抑えることが可能となった。すなわち、溶射材料をプラズマ炎の高温部に安定して供給することが可能となった。
In this way, in order to prevent adhesion of the thermal spray material to the main electrode and the main torch, in order to avoid adhesion of the thermal spray material to the main electrode, it is inclined with respect to the central axis of the main electrode where the plasma arc is formed. Although the thermal spray material was supplied from the direction to perform, it became possible to supply the thermal spray material along the central axis of the main electrode as in the
本願の発明者は、プラズマ炎の高温部に安定して溶射材料20aを供給することにより、これまでパラメータとして扱うことができなかった溶射材料20aの供給条件をパラメータとして、形成される皮膜24の特性の変化を試験した。そして、溶射材料20aの供給条件として、材料供給ガス20の供給量を変化させることを試みた。図4は、材料供給ガス20の供給量Qfを違えて測定した粒子速度の一例を示す画像である。図5は、材料供給ガス20の供給量Qfを変えたときの、溶射材料20aの粒子速度を測定した結果を示すグラフである。
The inventor of the present application supplies the
図4に示すように、主トーチ1の開口部4aから100mmの位置におけるプラズマ炎を高速度カメラ等により撮影して粒子速度を測定すると、材料供給ガス20の供給量Qfにより粒子速度が相違している。複数の材料供給ガス20の供給量Qfにおける粒子速度を測定すると、図5に示すように、材料供給ガス20の供給量Qfを増やすと粒子速度が高まるという結果が得られた。
As shown in FIG. 4, when the particle velocity is measured by photographing a plasma flame at a
図6は、材料供給ガス20の供給量Qfを1.0l/minと10.0l/minとに異ならせて形成した皮膜24を示す断面図である。
図6に示すように、材料供給ガス20の供給量が10.0l/minの場合には、材料供給ガス20の供給量が1.0l/minの場合より皮膜24が薄くなる。この結果から、材料供給ガス20の供給量Qfを制御して形成される皮膜24の特性として厚みを変え得ることがわかる。すなわち、材料供給ガス20の供給量をより多くして厚さの薄い皮膜24をより速く形成する、或いは、材料供給ガス20の供給量をより少なくして厚さの厚い皮膜24を形成することが可能となる。
FIG. 6 is a cross-sectional view showing the
As shown in FIG. 6, when the supply amount of the
また、発明者は、材料供給ガス20の供給量Qfを違えて皮膜24の硬度を測定した。
図7は、材料供給ガス20の供給量Qfと形成される皮膜24の硬度との関係を示すグラフである。図7に示すように、材料供給ガス20の供給量Qfが多い場合には、材料供給ガス20の供給量Qfが少ない場合より皮膜24の硬度が低くなる。このため、発明者は、材料供給ガス20の供給量Qfを制御して形成される皮膜24の特性として硬度を変えることを可能とした。すなわち、材料供給ガス20の供給量Qfをより多くして硬度が低い皮膜24をより速く形成する、或いは、材料供給ガス20の供給量Qfをより少なくして硬度が高い皮膜24を形成することを可能とした。
Further, the inventor measured the hardness of the
FIG. 7 is a graph showing the relationship between the supply amount Qf of the
本実施形態のプラズマ溶射装置100、101によれば、溶射材料20a含む材料供給ガス20を主陽極3の中心軸に沿うように吹き付けて基材25に皮膜24を形成する材料供給ガス20の供給量を制御する制御装置31を備えているので、材料供給ガス20の供給量を制御することにより基材25上に到達する際の溶射材料20aの供給条件としての材料供給ガス20の供給量を異ならせて皮膜24を形成することが可能である。そして、制御装置31により材料供給ガス20の供給量を制御して互いに特性、すなわち、皮膜24の厚み及び硬度の異なる皮膜24を形成することが可能である。
According to the
制御装置31による自動材料供給装置30の制御は、例えば、図5,図7のグラフに示すようなデータに基づくデータベース、すなわち、形成される皮膜24の厚みまたは硬度と材料供給ガス20の供給量とを対応付けた特性データベースを予め生成しておき、形成すべき皮膜24の厚みまたは硬度と特性データベースとに基づいて材料供給ガス20の供給量を制御することにより、容易に制御することが可能である。
このとき、基材25に吹き付けられる溶射材料20aの粒子速度と粒子温度との少なくともいずれか一方をCCDカメラ等により観測し、観測結果と形成すべき皮膜24の厚みまたは硬度とに基づいて制御装置31により材料供給ガス20の供給量を制御すると、より正確な制御が可能であり所望の厚みまたは硬度を備えた皮膜24を形成することが可能である。
The control of the automatic
At this time, at least one of the particle velocity and the particle temperature of the
図8は、主トーチ1と副トーチ2とが一体となったプラズマ溶射装置102の概略構成を示す図である。
上記実施の形態においては、主トーチ1と副トーチ2とが別個に分離しているプラズマ溶射装置100、101について説明したが、図8に示すように、主トーチ1の外套における開口部4aの出口側に副トーチ2、39が絶縁体60を介して一体に設けられた、主トーチ1と副トーチ2、39の一体型プラズマ溶射装置102であっても構わない。
FIG. 8 is a diagram showing a schematic configuration of the
In the above embodiment, the
また、上記実施形態は、本発明の理解を容易にするためのものであり、本発明を限定して解釈するためのものではない。本発明は、その趣旨を逸脱することなく、変更、改良され得ると共に、本発明にはその等価物が含まれることはいうまでもない。 Further, the above embodiment is for facilitating the understanding of the present invention, and is not for limiting the interpretation of the present invention. The present invention can be changed and improved without departing from the gist thereof, and it is needless to say that the present invention includes equivalents thereof.
1 主トーチ、2 副トーチ、3 主陽極、4 主外套、4a 開口部、
4b テーパー部、5 主プラズマガス導入口、6 主プラズマガス、7 主電源、
8,9 スイッチ、10 副陰極、10a 副陰極の先端、11 副外套、
11a 孔、12 副プラズマガス導入口、13 副プラズマガス、14 副電源、
15 スイッチ、16 主プラズマアーク、17 副プラズマアーク、18 プラズマ、
19 材料送入管、19a 溶射材料吐出孔、20 材料供給ガス、20a 溶射材料、
21 溶融物、22 プラズマトリミング部、23 プラズマ炎、24 皮膜、25 基材、
26 連結管、27,28 絶縁体、30 自動材料供給装置、31 制御装置、
39 副トーチ、40 副陰極、40a 副陰極の先端、41 副外套、41a 孔、
42 副電源、43,44,45,46 スイッチ、47 絶縁体、
48 副プラズマガス導入口、49 副プラズマガス、50 旋回流形成部、
51 ガス環状室、52 旋回流形成孔、53 内壁、55 スイッチ、
56 副プラズマアーク、60 絶縁体、100 複合トーチ型プラズマ溶射装置、
101 ツインカソード型プラズマ溶射装置、102 一体型プラズマ溶射装置、
C1 主陽極の中心軸、C2 副陰極の中心軸
1 main torch, 2 sub torch, 3 main anode, 4 main mantle, 4a opening,
4b taper part, 5 main plasma gas inlet, 6 main plasma gas, 7 main power supply,
8,9 switch, 10 secondary cathode, 10a tip of secondary cathode, 11 secondary jacket,
11a hole, 12 secondary plasma gas inlet, 13 secondary plasma gas, 14 secondary power source,
15 switches, 16 main plasma arcs, 17 secondary plasma arcs, 18 plasmas,
19 Material feeding pipe, 19a Spraying material discharge hole, 20 Material supply gas, 20a Spraying material,
21 melt, 22 plasma trimming section, 23 plasma flame, 24 coating, 25 substrate,
26 connecting pipe, 27, 28 insulator, 30 automatic material supply device, 31 control device,
39 sub torch, 40 sub cathode, 40a tip of sub cathode, 41 sub mantle, 41a hole,
42 Sub power supply, 43, 44, 45, 46 switch, 47 insulator,
48 sub-plasma gas inlet, 49 sub-plasma gas, 50 swirl flow forming section,
51 gas annular chamber, 52 swirl flow forming hole, 53 inner wall, 55 switch,
56 sub-plasma arc, 60 insulator, 100 composite torch type plasma spraying device,
101 Twin cathode type plasma spraying device, 102 Integrated plasma spraying device,
C1 center axis of main anode, C2 center axis of sub-cathode
Claims (9)
中心軸が前記主陽極の前記中心軸と交差する副陰極を備える副トーチと、
を有し、
前記主陽極と前記副陰極との間に形成されるプラズマアークと、
前記主陽極の前記中心軸に沿うように導入される前記主プラズマガスと、
前記副陰極の前記中心軸に沿い前記主陽極の前記中心軸に向かうように導入される前記副プラズマガスと、により前記主陽極の前記中心軸に沿うように形成されるプラズマ炎に、前記材料送入管から前記材料供給ガスと共に前記溶射材料が送入されて前記溶射材料が溶融され基材に吹き付けられて前記溶射材料の皮膜を形成するプラズマ溶射装置において、
前記材料供給ガスの供給量を制御する供給量制御部を備えることを特徴とするプラズマ溶射装置。 A main torch having a main anode having a material feed pipe for feeding a thermal spray material along a central axis together with a material supply gas for feeding the thermal spray material, and introducing a main plasma gas along the central axis When,
A secondary torch comprising a secondary cathode whose central axis intersects the central axis of the primary anode;
Have
A plasma arc formed between the main anode and the sub-cathode;
The main plasma gas introduced along the central axis of the main anode;
The material is applied to the plasma flame formed along the central axis of the main anode by the sub-plasma gas introduced along the central axis of the sub-cathode and toward the central axis of the main anode. In the plasma spraying apparatus in which the thermal spray material is fed together with the material supply gas from a feed pipe, the thermal spray material is melted and sprayed onto a base material to form a coating of the thermal spray material,
A plasma spraying apparatus comprising a supply amount control unit for controlling a supply amount of the material supply gas.
前記供給量制御部は、形成すべき前記皮膜の前記特性と前記特性データベースとに基づいて前記材料供給ガスの供給量を制御することを特徴とする請求項1~7のいずれか1項に記載のプラズマ溶射装置。
Generating a characteristic database in which the characteristic of the coating is associated with the supply amount of the material supply gas;
The supply amount control unit controls the supply amount of the material supply gas based on the characteristic of the film to be formed and the characteristic database. Plasma spraying equipment.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0584455A (en) * | 1991-02-21 | 1993-04-06 | Plasma Technik Ag | Plasma melt-spraying device for melt-spraying powder material or gas material |
| JP2002231498A (en) * | 2001-01-31 | 2002-08-16 | Chugoku Electric Power Co Inc:The | Composite torch type plasma generating method and device |
| JP2005525465A (en) * | 2002-02-28 | 2005-08-25 | スネクマ・セルビス | Thermal spray equipment |
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| JP5515277B2 (en) * | 2008-11-04 | 2014-06-11 | 株式会社日本セラテック | Plasma spraying equipment |
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2015
- 2015-03-26 WO PCT/JP2015/059294 patent/WO2015147127A1/en not_active Ceased
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0584455A (en) * | 1991-02-21 | 1993-04-06 | Plasma Technik Ag | Plasma melt-spraying device for melt-spraying powder material or gas material |
| JP2002231498A (en) * | 2001-01-31 | 2002-08-16 | Chugoku Electric Power Co Inc:The | Composite torch type plasma generating method and device |
| JP2005525465A (en) * | 2002-02-28 | 2005-08-25 | スネクマ・セルビス | Thermal spray equipment |
Non-Patent Citations (2)
| Title |
|---|
| "Yosha Benran", JAPAN THERMAL SPRAYING SOCIETY, 31 May 1964 (1964-05-31), pages 644 - 647 * |
| "Yosha Handbook", JAPAN THERMAL SPRAYING SOCIETY, 25 October 1994 (1994-10-25), pages 137 - 141 * |
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