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WO2015005607A1 - Appareil de traitement de substrat - Google Patents

Appareil de traitement de substrat Download PDF

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Publication number
WO2015005607A1
WO2015005607A1 PCT/KR2014/005880 KR2014005880W WO2015005607A1 WO 2015005607 A1 WO2015005607 A1 WO 2015005607A1 KR 2014005880 W KR2014005880 W KR 2014005880W WO 2015005607 A1 WO2015005607 A1 WO 2015005607A1
Authority
WO
WIPO (PCT)
Prior art keywords
reaction tube
support
substrate
disposed
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2014/005880
Other languages
English (en)
Korean (ko)
Inventor
양일광
송병규
김용기
김경훈
신양식
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eugene Technology Co Ltd
Original Assignee
Eugene Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eugene Technology Co Ltd filed Critical Eugene Technology Co Ltd
Publication of WO2015005607A1 publication Critical patent/WO2015005607A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H10P72/3312—
    • H10P14/20—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D5/00—Supports, screens or the like for the charge within the furnace
    • F27D5/0037—Supports specially adapted for semi-conductors
    • H10P72/0462—
    • H10P95/00—

Definitions

  • the present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus provided with a blocking plate and a blocking ring to supply a predetermined process gas to each substrate contained in a chamber.
  • the semiconductor device has many layers on a silicon substrate, and these layers are deposited on the substrate through a deposition process.
  • This deposition process has several issues, and these issues are important for evaluating the deposited films and selecting the deposition method.
  • the first is the 'quality' of the deposited film. This means composition, contamination levels, defect density, and mechanical and electrical properties.
  • the composition of the films can vary depending on the deposition conditions, which is very important for obtaining a specific composition.
  • the second is uniform thickness across the wafer.
  • the thickness of the film deposited on the nonplanar pattern on which the step is formed is very important. Whether the thickness of the deposited film is uniform may be determined through step coverage defined by dividing the minimum thickness deposited on the stepped portion by the thickness deposited on the upper surface of the pattern.
  • Another issue with deposition is filling space. This includes gap filling between the metal lines with an insulating film including an oxide film. The gap is provided to physically and electrically insulate the metal lines.
  • uniformity is one of the important issues associated with the deposition process, and non-uniform films result in high electrical resistance on metal lines and increase the likelihood of mechanical failure.
  • An object of the present invention is to supply a constant process gas to each substrate in the chamber.
  • Another object of the present invention is to supply a uniform process gas to each substrate to perform a uniform process of the substrates.
  • the substrate processing apparatus the substrate is transferred through a passage formed on one side, the upper portion of the chamber of the open shape;
  • An inner reaction tube connected to the chamber to provide an inner space in which a process for the substrate is made, and having a plurality of support tips protruding along an inner surface;
  • a boat having a vertical frame in which a plurality of support slots are formed along a vertical direction, the boat capable of lifting in the inner space;
  • Blocking plates disposed on the vertical frame and disposed between the support slots and disposed above the support slots at the uppermost end and below the support slots at the lower end;
  • Blocking rings which are respectively placed on an upper portion of the support tip and protrude toward the inside of the inner reaction tube from the support tip;
  • An injection nozzle inserted into one side of the inner reaction tube and disposed along a vertical direction of the inner reaction tube and positioned between the support tips to supply a process gas toward the substrate;
  • an exhaust nozzle inserted into the other side of the inner reaction tube and disposed along the up and down direction
  • the blocking plate may have a larger outer diameter when disposed in a downward direction, and the blocking ring may have a larger inner diameter when disposed in a downward direction.
  • Centers of the blocking plate and the blocking ring may be the same as each other.
  • the boat includes a loading position for sequentially loading the substrate transferred through the passage into each of the support slots; And the substrate is positioned between the support tips, and each blocking ring is contacted with each blocking plate to be spaced apart from the support tip and can be switched to a process position for partitioning the inner space into a plurality of reaction spaces.
  • the substrate processing apparatus includes: a supply port formed at an upper portion of the passage and supplying the process gas to the injection nozzle; And an exhaust port formed at the other side of the passage and configured to exhaust the process gas sucked through the exhaust nozzle to the outside.
  • the substrate processing apparatus further includes an auxiliary exhaust port formed on the other side of the chamber, wherein a lower end of the internal reaction tube is connected to a bottom surface of the chamber, and a supply hole communicating with the passage and the auxiliary exhaust port, respectively; It may have an exhaust hole.
  • the support tip may be disposed above the supply hole.
  • the substrate processing apparatus further includes an outer reaction tube disposed outside the inner reaction tube and closing the open upper portion of the chamber, wherein the injection nozzle and the exhaust nozzle are disposed inside the outer reaction tube.
  • An injection port of the injection nozzle and an exhaust port of the exhaust nozzle may be located inside the internal reaction tube.
  • the blocking plate provided in the boat and the blocking ring installed in the inner reaction tube are interposed between the substrate and the substrate accommodated in the vertical direction, respectively, it is possible to supply a constant process gas to each partitioned reaction space. have. Therefore, by performing a uniform process on each substrate, it is possible to ensure the productivity and quality of the substrate.
  • FIG. 1 is a view showing a general substrate processing apparatus.
  • FIG. 2 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention.
  • 3 to 5 are diagrams illustrating an operation process of the substrate processing apparatus shown in FIG. 2.
  • FIG. 6 is a view showing a flow state of a process gas of the substrate processing apparatus shown in FIG. 5.
  • FIGS. 1 to 6 Embodiments of the invention may be modified in various forms, the scope of the invention should not be construed as limited to the embodiments described below. These embodiments are provided to explain in detail the present invention to those skilled in the art. Accordingly, the shape of each element shown in the drawings may be exaggerated to emphasize a more clear description.
  • the substrate processing apparatus 100 includes a chamber 10 having an open top shape, and a passage 8 is formed at one side of the chamber 10, so that the substrate S is a passage. It may be loaded into the chamber 10 through (8).
  • the gate valve (not shown) may be installed outside the passage 8, and the passage 8 may be opened and closed by the gate valve.
  • the substrate processing apparatus 100 includes a boat 20 on which a plurality of substrates S are stacked, and the substrates S transferred through the passage 8 are sequentially loaded in the vertical direction on the boat 20. .
  • the lifting shaft 70 is connected to the lower part of the boat 20, and the lifting shaft 70 can be lifted by the lifting motor 79 through the bottom surface of the chamber 10.
  • the lifting shaft 70 may be provided with a rotary motor 72 so that the boat 20 is rotatable, the rotary motor 72 is installed on the motor housing 74 to rotate the motor during the process ( The boat 20 and the substrates W may be rotated together by driving 72 to rotate the lifting shaft 70. This is because the reaction gas flows from the injection port 42 toward the exhaust port 47, and as the deposition on the substrate S proceeds from the injection port 42 side to the exhaust port 47 side, the concentration of the process gas tends to decrease. This is to prevent this.
  • the motor housing 74 is fixed to the bracket 75, and one side of the bracket 75 may be connected to the lifting rod 77 installed at the lower portion of the chamber 10 to move up and down along the lifting rod 77.
  • the bracket 75 is screwed to the lifting rod 77, and the lifting rod 77 is rotated by the lifting motor 79.
  • the elevating rod 77 rotates by the rotation of the elevating motor 79, thereby allowing the bracket 75 and the motor housing 74 to elevate together.
  • the other side of the bracket 75 is connected to the guide rod 78 installed in parallel with the lifting rod 77, the bracket 75 can be easily lifted by the lifting rod 77 and the guide rod 78. .
  • the lifting shaft 70 and the boat can be lifted together, the boat 20 is a loading position and the boat 20 is loaded on the boat 20 by the substrate (W) sequentially by the lifting motor 79 As it rises, it may be switched to a process position where the process of the substrate W is performed.
  • the bellows 60 connects the chamber 10 and the motor housing 74 to each other, thereby maintaining airtightness inside the chamber 10.
  • the injection holes 42 of the injection nozzles 40 are inserted along the inner wall of the inner reaction tube 50 and are disposed at different heights. Therefore, the process gas supplied from the injection nozzle 40 flows toward the exhaust nozzle 45 located on the opposite side, thereby ensuring sufficient time for the process gas and the surface of the substrate S to react. At this time, the unreacted gas and the reaction by-products generated during the process are sucked out through the exhaust nozzle 45 and discharged.
  • the substrate processing apparatus 100 capable of supplying a predetermined process gas to each substrate S will be described, and the omitted components and operation processes of the substrate processing apparatus 100 described later are described above. Can be replaced with
  • the boat 20 includes a vertical frame 25 having a plurality of support slots 27 formed along the vertical direction, and an upper frame 22 and a lower frame 29 connected to upper and lower portions of the vertical frame 25, respectively. It can be provided.
  • the upper frame 22 and the lower frame 29 may be circular corresponding to the shape of the substrate (S).
  • the vertical frame 25 is provided in plurality in order to easily load the substrate S transferred through the passage 8, and may sequentially load the substrate S in the support slots 27 formed in the vertical direction.
  • the support slots 27 formed on each vertical frame 25 are formed in parallel with each other, and between the support slots 27 formed on the horizontal line and above the support slots located at the top and the bottom of the support slots located at the bottom thereof.
  • Blocking plates 30 are installed. Each blocking plate 30 has the same center as each other, the larger the outer plate is disposed in the downward direction.
  • the internal reaction tube 50 may be connected on the bottom surface of the chamber 10.
  • the internal reaction tube 50 may have a shape protruding upward and may have a cylindrical shape with an open bottom.
  • the supply hole 51 formed in the inner reaction tube communicates with the passage 8 and the inner space, and the exhaust hole 54 formed in the inner reaction tube communicates with the auxiliary exhaust port 53 and the inner space.
  • the inner wall of the inner reaction tube 50 is provided with a plurality of support tips 55 protruding toward the inside, the support tips 55 may be disposed above the supply hole 51.
  • the support tips 55 may be installed at one side and the other side of the inner wall of the inner reaction tube 50 at predetermined intervals along the up and down direction, respectively, and the support tips 55 disposed at one side and the other side are arranged side by side. .
  • Blocking rings 35 are respectively placed on the upper portions of the support tips 55 facing each other.
  • the injection holes 42 of the injection nozzles 40 are respectively inserted into the inner wall of the inner reaction tube 50 and are disposed at different heights along the vertical direction of the inner reaction tube 50.
  • Exhaust ports 47 of the exhaust nozzles 45 are also disposed on the opposite side of the injection port 42 and inserted into the inner wall of the inner reaction tube 50, and are disposed at different heights along the vertical direction of the inner reaction tube 50. Is placed.
  • the injection port 42 and the exhaust port 47 of the same height have a symmetrical structure, and the injection port 42 and the exhaust nozzle 45 of the injection nozzle 40 centering on the substrate S loaded on the boat 20. Vents 47 are located opposite each other.
  • An injection port 42 of the injection nozzle 40 and an exhaust port 47 of the exhaust nozzle 45 are disposed between the respective support tips 55.
  • the base flange 6 may be installed above the chamber 10.
  • a supply port 43 is formed at one side of the base flange 6, and the supply port 43 is connected to the injection nozzle 40 to supply process gas to the injection nozzle 40.
  • an exhaust port 49 is formed at the other side of the base flange 6, and the exhaust port 49 is connected to the exhaust nozzle 45 so that the unreacted gas and the reaction by-products sucked through the exhaust nozzle 45 to the outside. Can be exhausted.
  • An external reaction tube 58 may be installed on the upper portion of the base flange 6, and the external reaction tube 58 may be disposed outside the injection nozzle 40 and the exhaust nozzle 45 to open the chamber 10. The upper part can be closed.
  • the chamber cover 5 may be installed outside the external reaction tube 58, and the chamber cover 5 may include a heater (not shown) for heating the substrate S.
  • An auxiliary gas supply port 44 is formed at one side of the bottom of the chamber 10, and the auxiliary gas supply port 44 is connected to an auxiliary gas supply line (not shown) to supply gas supplied through the auxiliary gas supply line to the chamber ( 10) can be supplied.
  • an inert gas may be supplied into the chamber 10 through the auxiliary gas supply port 44, and supplying the inert gas prevents the process gas from flowing to the bottom of the boat 20 converted to the process position. can do.
  • 3 to 5 are diagrams illustrating an operation process of the substrate processing apparatus shown in FIG. 2.
  • 3 is a view showing the loading position of the boat
  • Figures 4 and 5 are views showing a state in which the boat is switched from the loading position to the process position.
  • the substrates S transferred through the passage 8 are loaded on the support slots 27 of the boat 20, respectively.
  • the substrate S which is raised at a predetermined interval by the lifting motor 79 of the boat 20, and transferred through the passage 8, moves downward from the support slot 27 formed at the top thereof. Can be loaded sequentially.
  • the boat 20 on which the substrate S is loaded is raised toward the jet nozzle 40.
  • a plurality of support slots 27 are formed on the vertical frame 25 of the boat 20, and the blocking plates 30 are respectively provided on the support slots 27.
  • the centers of the blocking plates 30 coincide with each other, and the blocking plates 30 have a larger outer diameter as they are disposed in the downward direction.
  • the internal reaction tube 50 provides an internal space 2 in which a process for the substrate S is made, and the support tips 55 installed on the inner wall of the internal reaction tube 50 are formed of the injection nozzle 40.
  • the injection holes 42 and the exhaust nozzles 45 are disposed above and below the exhaust ports 47, respectively.
  • the blocking ring 35 is placed on the upper portion of the support tip 55, and the center of each of the blocking rings 35 has a larger inner diameter as it is disposed in the downward direction in agreement with each other.
  • each blocking plate 30 abuts with the blocking ring 35 placed on the support tip 55. Accordingly, each blocking plate 30 is raised to a predetermined height in contact with each blocking ring 35 to partition the internal space (2) into a plurality of reaction space (4). Therefore, each reaction space 4 can supply the same process gas as the interference of each other is minimized.
  • FIG. 6 is a view showing a flow state of a process gas of the substrate processing apparatus shown in FIG. 5.
  • each blocking ring 35 abuts on an upper portion of each blocking plate 30 to be spaced apart from the support tip 55, and each of the inner space 2 is separated. It is switched to the process position partitioned by the reaction space 4 in which the process for the substrate S is performed.
  • a uniform process is performed on each substrate S by supplying a process gas to each reaction space 4 through each blocking plate 30 and a blocking ring 35. Productivity and quality of the substrate S can be secured.
  • the present invention can be applied to various types of semiconductor manufacturing equipment and manufacturing methods.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

La présente invention concerne un appareil de traitement de substrat qui, selon un mode de réalisation, comprend : une chambre ; un tube de réaction interne ; une nacelle ; des plaques de blocage ; des anneaux de blocage ; des buses d'injection ; et des buses d'échappement. La chambre comporte un trajet formé sur un de ses côtés, de sorte qu'un substrat soit transporté sur le trajet et possède une forme à ouverture par le dessus. Le tube de réaction interne est raccordé à la chambre et forme un espace interne dans lequel le procédé pour le substrat est exécuté et comporte une pluralité de pointes de support qui dépassent le long de la surface interne associée. La nacelle possède un cadre vertical, sur lequel une pluralité de fentes de support est formée le long de la direction longitudinale et qui peut être élevé dans l'espace interne. Les plaques de blocage sont installées séparément sur le cadre vertical et sont disposées entre les fentes de support, sur la partie supérieure de la fente de support la plus haute, puis sur la partie inférieure de la forme de support la plus basse. Les anneaux de blocage sont respectivement disposés sur la partie supérieure des pointes de support et dépassent des pointes de support vers le côté interne du tube de réaction interne. Les buses d'injection sont insérées et installées sur un côté du tube de réaction interne, sont disposées le long de la direction longitudinale du tube de réaction interne, sont positionnées entre les pointes de support et alimentent le substrat en gaz de procédé. Les buses d'évacuation sont insérées et installées sur l'autre côté du tube de réaction interne, sont disposées le long de la direction longitudinale du tube de réaction interne, sont positionnées entre les pointes de support et évacuent le gaz de procédé.
PCT/KR2014/005880 2013-07-10 2014-07-02 Appareil de traitement de substrat Ceased WO2015005607A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2013-0081155 2013-07-10
KR20130081155A KR101463592B1 (ko) 2013-07-10 2013-07-10 기판 처리장치

Publications (1)

Publication Number Publication Date
WO2015005607A1 true WO2015005607A1 (fr) 2015-01-15

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KR (1) KR101463592B1 (fr)
TW (1) TWI505337B (fr)
WO (1) WO2015005607A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112889142A (zh) * 2018-10-28 2021-06-01 应用材料公司 具有退火迷你环境的处理腔室

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KR101715193B1 (ko) 2015-07-20 2017-03-10 주식회사 유진테크 기판 처리장치
KR101710944B1 (ko) 2015-09-11 2017-02-28 주식회사 유진테크 기판처리장치
KR101731488B1 (ko) 2015-10-27 2017-05-02 주식회사 유진테크 기판처리장치 및 튜브 조립체 조립방법
KR101715192B1 (ko) 2015-10-27 2017-03-23 주식회사 유진테크 기판처리장치
KR101930456B1 (ko) 2018-05-03 2018-12-18 주식회사 유진테크 기판 처리 시스템
US11367632B2 (en) * 2020-05-08 2022-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Heater lift assembly spring damper

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758030A (ja) * 1993-08-18 1995-03-03 Toshiba Corp 半導体製造装置
JPH10270453A (ja) * 1997-03-28 1998-10-09 Koyo Lindberg Ltd 半導体熱処理装置およびこれを用いた半導体基板の昇降温方法
JP2009135551A (ja) * 2006-12-12 2009-06-18 Hitachi Kokusai Electric Inc 半導体装置の製造方法
KR20130054708A (ko) * 2011-11-17 2013-05-27 주식회사 유진테크 열차단플레이트를 포함하는 기판 처리 장치
KR20130054707A (ko) * 2011-11-17 2013-05-27 주식회사 유진테크 복수의 배기포트를 포함하는 기판 처리 장치 및 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758030A (ja) * 1993-08-18 1995-03-03 Toshiba Corp 半導体製造装置
JPH10270453A (ja) * 1997-03-28 1998-10-09 Koyo Lindberg Ltd 半導体熱処理装置およびこれを用いた半導体基板の昇降温方法
JP2009135551A (ja) * 2006-12-12 2009-06-18 Hitachi Kokusai Electric Inc 半導体装置の製造方法
KR20130054708A (ko) * 2011-11-17 2013-05-27 주식회사 유진테크 열차단플레이트를 포함하는 기판 처리 장치
KR20130054707A (ko) * 2011-11-17 2013-05-27 주식회사 유진테크 복수의 배기포트를 포함하는 기판 처리 장치 및 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112889142A (zh) * 2018-10-28 2021-06-01 应用材料公司 具有退火迷你环境的处理腔室
CN112889142B (zh) * 2018-10-28 2024-05-28 应用材料公司 具有退火迷你环境的处理腔室

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KR101463592B1 (ko) 2014-11-21
TW201508829A (zh) 2015-03-01
TWI505337B (zh) 2015-10-21

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