WO2015078857A1 - Method for producing an optoelectronic semiconductor device, and optoelectronic semiconductor device and optoelectronic arrangement - Google Patents

Abstract

An optoelectronic semiconductor device is specified, comprising: • - at least one optoelectronic semiconductor component (2), comprising at least one optoelectronic semiconductor chip (21) and a housing (22), and • - at least one optically inactive component (4, 5), wherein • - the at least one optoelectronic semiconductor component (2) and the at least one optically inactive component (4, 5) are connected to one another at their laterally situated side surfaces (2c, 4c, 5c) via a shaped body (6) non-transmissive to radiation. A device produced by means of this method is also specified.

Description

description

Process for producing an optoelectronic

Semiconductor device and optoelectronic semiconductor device and optoelectronic device

The document WO 2011/015449 describes a

Optoelectronic semiconductor device and a method for producing such an optoelectronic

Semiconductor device.

An object to be solved is to provide a simplified and inexpensive method for producing a

Specify optoelectronic semiconductor device, wherein desired functions can be variably integrated in the production in the optoelectronic semiconductor device. Another task to be solved is to

Optoelectronic semiconductor device and a

Specify optoelectronic device, which can be made easily and inexpensively, with desired functions can be variably integrated in the production.

There will be a method of making a

specified optoelectronic semiconductor device. The optoelectronic semiconductor device is

for example, a light emitting diode, which is provided for the emission of electromagnetic radiation. Alternatively, the optoelectronic semiconductor component can also be a photodiode, which is used for the detection of

electromagnetic radiation is provided. It is also possible that the optoelectronic semiconductor device emits radiation in one operating state and in one second operating state detected or absorbed radiation.

In accordance with at least one embodiment of the method, a carrier is first provided. The carrier can be, for example, a temporary carrier which is removed again in a subsequent method step or else a carrier which remains on the optoelectronic semiconductor component after production. For example, the carrier may be a foil

Foil), a printed circuit board or in general to act around a plate, which with a KunstStoffmaterial, a

Metal, a ceramic material or a

 Semiconductor material is formed. It is also possible that the carrier contains both a foil and a printed circuit board or plate.

The carrier has a main extension plane in which it extends in lateral directions. Perpendicular to

Main extension plane, in the vertical direction, the carrier has a thickness. The thickness of the carrier is small compared to the maximum extent of the carrier in a lateral

Direction. A main plane of the carrier forms a top surface of the carrier.

In accordance with at least one embodiment of the method, at least one optoelectronic semiconductor component is formed

provided, which comprises at least one optoelectronic semiconductor chip and a housing. In which

optoelectronic semiconductor chip is concerned

for example, a light-emitting diode chip, a

Photodiode chip or a laser diode chip. The housing may be, for example, a radiation-transmissive Envelope and / or a radiation-impermeable envelope and / or an otherwise mechanically stabilizing

Act component. Here and below means

"Mechanically stabilizing" that the mechanical handling of the optoelectronic semiconductor component is improved by the stabilizing part of the housing and thereby, for example, a higher external force can act on the optoelectronic semiconductor device, without this being destroyed

Optoelectronic semiconductor device by the

stabilizing part of the housing become mechanically self-supporting, that is, that the optoelectronic

Semiconductor device as part of a

 Manufacturing process can be handled with tools such as tweezers, without another supporting element must be present.

Furthermore, here and below means

 "Radiation-transmissive" that the electromagnetic radiation emitted or absorbed by the optoelectronic semiconductor component of the material used for the most part, so at least 50%, in particular at least 75%, is transmitted.

 "Radiation-opaque" means that of the

optoelectronic semiconductor device emitted

or absorbed electromagnetic radiation almost completely, so at least 75%, in particular to

at least 85% is absorbed or reflected.

In accordance with at least one embodiment of the method, an optically inactive component is provided. The optically inactive component may be, for example, an electronic component. This electronic Component may be, for example, a resistor, for example an SMT resistor, a diode, for example a Zener diode, an electronic driver for the at least one optoelectronic semiconductor component, an integrated circuit and / or another electronic component. Furthermore, it may be in the optically inactive

Component to act a mechanical component. This mechanical component may, for example, be a sleeve, a frame, an alignment hole, a screw hole, a bushing, a detent or another mechanical component. The choice of the specific type of the at least one optically inactive component is based on the specific field of application of the optoelectronic component and the properties required therefor of the at least one optically inactive component. The mechanical component sometimes allows accurate positioning of other optical, electronic or mechanical components, such as

for example, a lens. The spatial positioning or adjustment of the further component can in this case more accurately, that is, with a lower location tolerance, carried out as in a comparable optoelectronic semiconductor device, in which the at least one

Optoelectronic semiconductor device is not connected to a common shaped body with the optically inactive device.

In accordance with at least one embodiment of the method, the at least one optoelectronic semiconductor component and the at least one optically inactive component at the

Cover surface of the carrier arranged. It can also be a

Variety of optoelectronic semiconductor devices and / or a plurality of optically inactive devices are arranged on the carrier. The positioning of the components on the carrier takes place, for example, with a mounting system or assembly system. The connection between the carrier and a carrier surface facing the bottom surface of the at least one

Optoelectronic semiconductor device and / or a bottom surface of the at least one optically inactive device facing the carrier preferably takes place via a

Adhesive, which may for example have conductive or electrically insulating properties. However, it is also a solder joint or other mechanical connection between the carrier and the components possible. The

Connection can be temporary or permanent, meaning that it can be removed without residue as well

Residues can leave behind when removing or can not be removed without the at least one

Optoelectronic semiconductor device and / or destroy the at least one optically inactive device.

In accordance with at least one embodiment of the method, the at least one optoelectronic semiconductor component and the at least one optically inactive component are formed or encased with a common radiopaque shaped body. The forming or wrapping can be done for example by means of compression molding, liquid injection molding, transfer molding, casting, liquid injection molding, printing or the like. Forming or wrapping can be for everyone

Components in particular in a common

Process step, ie in the context of manufacturing tolerance simultaneously done.

The radiation-impermeable molding can, for example, a plastic, epoxy, silicone Epoxy silicone hybrid material, be formed of a thermally deformable plastic, with a glassy plastic, of a glass or of a ceramic material or contain at least one of these materials. The radiopaque body can

Radiation-reflecting or radiation-absorbing

be educated. It may appear white, colored or black when exposed to light. It is possible that the radiopaque body further materials such as Radiation Reflective or

Radiation absorbing particles. The

For example, reflective particles may consist of a metal oxide, such as titanium dioxide (TiO ₂ ), or may include a metal oxide introduced into a matrix material of the molded article, for example of silicone.

The radiation-impermeable embodiment of the shaped body allows an optical separation of the optoelectronic semiconductor components from one another. In other words, by the radiopaque body is the lateral radiation of each optoelectronic

 Semiconductor device prevents and the radiation takes place only via a radiation passage area, which is located on the side facing away from the carrier top surface of the optoelectronic semiconductor device and in the context of

Manufacturing tolerances runs parallel to the top surface of the carrier. This also prevents crosstalk between the individual light sources. As a result, for example, a more defined emission characteristic than in the case of similar optoelectronic semiconductor components without a

prevented lateral radiation can be achieved. This has in particular a high directivity and a low

Extension of the optoelectronic Semiconductor device emitted radiation beam result. Furthermore, the optical separation of the

Optoelectronic semiconductor devices targeted

Detection of incident on the optoelectronic semiconductor device electromagnetic radiation with a high spatial resolution. In other words, by preventing the lateral radiation, the light conductance (so-called etendue) of the optoelectronic semiconductor component compared to a similar optoelectronic

Semiconductor device without a laterally lying

radiopaque shaped body can be reduced.

According to at least one embodiment of the method, the shaped body covers a bottom surface and the

Radiation passage surface of the optoelectronic

Side surface of the at least one optoelectronic semiconductor component connecting the semiconductor component and a side surface of the at least one optically inactive element which connects the bottom surface and a cover surface facing away from the carrier of the at least one optically inactive component

Component at least in places. It stands the

Shaped body with the lateral lying, connecting

Side surfaces of the at least one optoelectronic

Semiconductor device and the lateral lying, connecting side surfaces of the at least one optically inactive

Component in direct contact. The molded body is there connected to the side surfaces without a connection. Here and below means "free of compound" that no connecting material between the side surfaces of

optoelectronic semiconductor component and the

Side surfaces of the optically inactive device and the

Shaped body is thus the connecting side surfaces are in direct contact with the molding. It is possible that all side surfaces of the at least one optoelectronic semiconductor component and / or the

at least one optically inactive component are completely covered by the molding. However, it is also possible that the at least one optoelectronic semiconductor component

and / or the at least one optically inactive component are covered only up to a certain height, starting from the top surface at their connecting side surfaces of the molding and parts of the at least one optoelectronic

Semiconductor device and / or the at least one optically inactive device protrude from the molding, so that the connecting side surfaces of the at least one

optoelectronic semiconductor component and / or the

connecting side surfaces of at least one optically inactive device in places free from

radiopaque shaped body and thus are freely accessible from the outside.

Furthermore, the bottom surface of the at least one remains

Optoelectronic semiconductor device and the bottom surface of the at least one optically inactive device free from the molding or by removing the molding

exposed. Furthermore, the radiation passage area of the at least one optoelectronic semiconductor component remains free of the molded body or is exposed by removal of the molded body. In this case, the radiation passage area, for example, by a mechanical cover of

Shaped bodies are kept free. For example, the

Radiation passage area of the at least one

Optoelectronic semiconductor device can be covered with a film which can be removed without residue from the radiation passage area after forming. Of the Shaped body can also chemically or mechanically by the

Floor surface and / or the top surface are removed.

For example, the molding can be heated or abraded or chemically peeled off.

In accordance with at least one embodiment of the method for producing an optoelectronic semiconductor component, the method comprises the following steps:

Providing a carrier with a top surface,

 Providing at least one optoelectronic semiconductor component comprising at least one

optoelectronic semiconductor chip and a housing,

 Providing at least one optically inactive component,

 - Arranging the at least one optoelectronic

Semiconductor device and the at least one optical

inactive component on the top surface of the carrier,

 - Forming the at least one optoelectronic

Semiconductor device and the at least one optical

inactive component with a common

radiopaque shaped body, wherein

 - A support surface facing the bottom of the at least one optoelectronic semiconductor device and a support surface facing the bottom surface of the at least one optically inactive device

and / or a wearer facing away from the carrier

Radiation passage area of the at least one

optoelectronic semiconductor component free from

remain radiopaque body or exposed, and - The molding all the radiation passage area and the bottom surface of the optoelectronic semiconductor device connecting the at least one optoelectronic

Semiconductor device and all a carrier facing away from the top surface and the bottom surface of the optically inactive

Component connecting side surfaces of the at least one optically inactive component at least partially covered.

The described method steps are doing

preferably carried out in the order given.

In this case, according to at least one embodiment of the method, it is possible for the at least one optically inactive component to be replaced by an optically active component and / or a radiation-detecting component.

In the method described here, in particular the idea is pursued that functions which are desired in the production, with a cost-effective and simplified manufacturing process variable in the optoelectronic

Semiconductor device can be integrated. this will

in particular by the reshaping of the at least one

optical semiconductor device and the at least one optically inactive device having a common

radiopaque shaped body in a common process step, ie in the context of manufacturing tolerance simultaneously achieved. In other words, the

Fabrication of the optoelectronic semiconductor device is by the simultaneous forming of the desired

Simplified components with the common molding and it is a high integration of functions allows, without a variety of different optoelectronic

To provide semiconductor device variants available. In accordance with at least one embodiment of the method, the carrier is an auxiliary carrier which, after being formed or coated with the radiopaque body, is made of the composite of the radiopaque body and the

at least one optoelectronic semiconductor component and the at least one optically inactive component is removed. The carrier formed as a subcarrier can

for example, be a foil or a rigid plate. It may, for example, contain a plastic, a metal or a ceramic material. The removal can

for example, by warming up, grinding or chemical detachment. For example, an adhesive layer which is thermally and / or chemically detachable may be arranged between the carrier and the components of the semiconductor component.

After removal of the carrier, the originally facing the carrier bottom surface of the at least one

Optoelectronic semiconductor device and the originally facing the carrier bottom surface of the at least one optically inactive device freely accessible. In other words, the two bottom surfaces are free of the carrier material and / or another material. The side surfaces of the at least one optoelectronic semiconductor component and the at least one optically inactive component are in direct

Contact with the radiopaque body.

Accordingly, the shaped body is a mechanically stabilizing body which, if present, a multiplicity of optoelectronic semiconductor components and / or optically inactive components with one another

combines. The composite of the radiopaque body, the at least one optoelectronic

Semiconductor device and the at least one optical inactive component can be mechanically self-supporting. In this case, "mechanically self-supporting" means that the optoelectronic semiconductor component, for example, in the context of the

Manufacturing process of the component with tools such as

For example, a pair of tweezers can be handled without the need for another mechanically supporting element. However, there may be another carrier

In accordance with at least one embodiment of the method, the housing of the at least one optoelectronic comprises

Semiconductor device, at least one radiation-transmissive sheath, which is in direct physical contact with the at least one optoelectronic semiconductor chip. In the case of the at least one radiation-permeable casing, e can be, for example, a potting body which contains a luminescence conversion material and / or a potting compound

Contains radiation scattering material. Alternatively, it is possible that the radiation-transmissive sheath is optically clear. Furthermore, it may be at the

radiation-transmissive cladding act around a lens which for beam shaping for the emitted or absorbed by the optoelectronic semiconductor chip

Radiation is provided.

The radiation-transmissive sheath may be formed, for example, with silicone, a phosphor, glass, plastic, ceramic, epoxy, epoxy-silicone hybrid material or another transparent or semi-transparent material. The radiation-permeable sheath may further comprise a matrix material in which reflective or absorbent particles are incorporated , According to at least one embodiment of the method, the at least one optoelectronic semiconductor component is before the forming of the at least one optoelectronic component

Semiconductor device and the at least one optical

inactive component with the common

radiopaque body with the

permeable to radiation.

The application of the radiation-permeable casing can take place, for example, by means of compression molding, liquid injection molding, transfer molding, casting, liquid injection molding, printing or a similar process. After application of the at least one radiation-permeable casing, a cover surface of this casing facing away from the carrier forms the

Radiation passage surface of the optoelectronic

Semiconductor device.

In accordance with at least one embodiment of the method, the connection between the carrier and the at least one optoelectronic semiconductor component and the at least one optically inactive component can be detached in a non-destructive manner. That is, the compound can be made, for example, via an adhesive that can be removed by heating or chemical peeling. Non-destructively detachable here means that at the optoelectronic

Semiconductor component after the detachment of the carrier no traces of the carrier and a connecting means can be detected more. Further, in the non-destructive dissolution, neither the carrier nor the optoelectronic semiconductor device is preferably damaged. The optoelectronic

Semiconductor component consists after releasing the carrier only from the composite of at least one optoelectronic Semiconductor device, the at least one optically inactive device and the radiopaque body.

According to at least one embodiment of the method, the radiation passage area of the at least one

optoelectronic semiconductor device during the

Forming or encapsulation with the radiopaque body is covered with a material which the

Radiation passage area of the at least one

Optoelectronic semiconductor device protects the molded body. By covering with this material, the radiation passage area of the at least one remains

Optoelectronic semiconductor component free of the molding. The covering material may for example be a film. In particular, the material can be left without residue from the

Radiation passage area of the at least one

Optoelectronic semiconductor device can be detached.

Furthermore, an optoelectronic semiconductor component is specified. The optoelectronic semiconductor component can preferably be produced by means of one of the methods described here. That is, all for the process

disclosed features are also disclosed for the optoelectronic semiconductor device and vice versa.

According to at least one embodiment of the optoelectronic semiconductor component, the optoelectronic component comprises

Semiconductor component at least one optoelectronic

Semiconductor device comprising at least one

optoelectronic semiconductor chip and a housing, and at least one optically inactive component. In this case, the at least one optoelectronic semiconductor component and the at least one optically inactive component are at their lateral lying, the top surface respectively

 Radiation passage surface and the bottom surface connecting side surfaces are connected to each other via a radiopaque body and are in direct with this

Contact. The side surfaces of the at least one

Optoelectronic semiconductor device and / or the at least one optically inactive device can be completely covered by the radiopaque body. In addition, it is also possible that the side surfaces only up to a certain height above the

Covering surface of the carrier are covered by the molding and in places are freely accessible.

In accordance with at least one embodiment of the optoelectronic semiconductor component, the composite is made of

radiopaque shaped body, the at least one optoelectronic semiconductor component and the at least one optically inactive component mechanically self-supporting.

In accordance with at least one embodiment of the optoelectronic semiconductor component, the radiation-impermeable one has

Shaped body a top surface and a bottom surface, wherein the top surface of the radiopaque body shape with the radiation passage area of the at least one

Optoelectronic semiconductor device and the bottom surface of the radiopaque shaped body forms a flush surface with the bottom surface of the at least one optoelectronic semiconductor device and / or with the bottom surface of the at least one optically inactive device. In other words, the top surface or the bottom surface of the radiopaque body protrudes beyond

Radiation passage area or the bottom surface of the optoelectronic semiconductor device and / or the Bottom surface of the optically inactive device not and vice versa. The bottom surfaces of the optoelectronic

Semiconductor device, the optically inactive device and the radiopaque body are thus substantially, that is, in the context of

 Manufacturing tolerances, in one plane. Likewise, the radiation passage area of the optoelectronic

Semiconductor device and the top surface of the

radiopaque body in the context of

Manufacturing tolerances in one plane.

In accordance with at least one embodiment of the optoelectronic semiconductor component, the housing of the at least one optoelectronic semiconductor component has a

radiation-transmissive envelope which is in direct physical contact with the at least one optoelectronic semiconductor chip.

In accordance with at least one embodiment of the optoelectronic semiconductor component, the housing comprises at least one

radiation-impermeable enclosure, wherein the at least one radiation-impermeable enclosure is laterally spaced apart from the at least one optoelectronic semiconductor chip and surrounds the at least one optoelectronic semiconductor chip at least in the lateral direction. The

radiopaque cladding may for example be made of epoxy resin, of silicone, of epoxy-silicone hybrid material with a plastic or otherwise

radiopaque material may be formed. The

radiopaque cladding may in particular contain the same material as the radiation-transmissive molded body. The radiopaque enclosure fulfills a similar or the same purpose as the radiopaque shaped body and serves in particular the optical separation of the optoelectronic

 Semiconductor devices. Between the radiopaque envelope and the at least one optoelectronic

Semiconductor chip may, for example, a

radiation-permeable coating or a gas-filled

Interspace are located.

The at least one optoelectronic semiconductor component may be a

prefabricated component comprising a housing and external electrical connection points, which are freely accessible from the outside, wherein a part of the housing, the at least one optoelectronic semiconductor chip on one of

Radiation passage surface facing away from the bottom surface of the at least one optoelectronic semiconductor chip

completely covered and the outer electrical

Connection points between the said part of the housing and the at least one optoelectronic semiconductor chip

are arranged. In the part of the housing, which covers the optoelectronic semiconductor chip at its bottom surface, it may be, for example, an envelope which is transparent to radiation or

is radiopaque. Furthermore, it may be a mechanically stabilizing enclosure. The part of the housing may, for example, contain a semiconductor material, a metal, a plastic or a ceramic material. The outer electrical connection points may be, for example, a metallic layer, a lead frame or a via, which is in direct contact with the housing. The optoelectronic Semiconductor chip is, for example, a thin wire, a wire contact, a via or a direct physical contact with the electrical

Connection points connected. The prefabricated component may be, for example, a light-emitting diode or a photodiode.

In accordance with at least one embodiment of the optoelectronic semiconductor component, at least one of them has at least one

Manufacturing tolerances perpendicular to the ceiling and / or the bottom surface of the radiopaque body

standing outer surface, hereinafter referred to as side surface

referred, the radiopaque body traces of separation on. For example, the side surface has traces of a material removal or a sawing process and has a higher roughness than non-isolated surfaces. A carried out singling is therefore due to the

Separation marks on the finished optoelectronic

Semiconductor component detectable.

In accordance with at least one embodiment of the optoelectronic semiconductor component, the carrier is a connection carrier and the radiopaque shaped body is at least

in places connected without connecting means with the connection carrier. This means that there is no connecting material between a bottom surface of the molded body and the top surface of the carrier and thus the two surfaces are in direct contact. The connection between the connection carrier and the body arises during curing of the molded body on

Connection carrier. The connection carrier may be

For example, a printed circuit board (PCB), a metal core board, a preformed lead frame, a ceramic substrate with traces or the like act. Furthermore, an optoelectronic device is specified. In particular, the optoelectronic arrangement comprises an optoelectronic semiconductor component described here, which can preferably be produced by means of a method described here. That is, all disclosed for the method and for the optoelectronic semiconductor device

Features are also disclosed for the optoelectronic device and vice versa.

In accordance with at least one embodiment of the optoelectronic arrangement, the latter comprises at least one optoelectronic semiconductor component according to one described here

Embodiment and a circuit board having a top surface, a first region and at least a second region, wherein the at least one optoelectronic semiconductor device is disposed on the top surface of the circuit board, wherein at least one optoelectronic semiconductor device of the at least one optoelectronic semiconductor device is disposed over the first region of the circuit board and is in thermal contact with this first region, and at least one optically inactive component of the at least one optoelectronic semiconductor component in the second

Area of the circuit board is arranged and is in thermal contact with this second area. The thermal contact may be, for example, a solder joint or an adhesive which is conductive or non-conductive

may be formed, or any other thermal

Contact agents are produced. In this case, the first one

Area of the circuit board has a higher thermal conductivity than the second area of the circuit board. In the

PCB can, for example, at least

in sections around a printed circuit board (PCB), a Metal core board, a preformed lead frame, a ceramic substrate with traces or the like act.

The first part of the printed circuit board can be formed, for example, with a thermally more conductive material than the second part of the printed circuit board. It is also possible that

Assemble components of the optoelectronic semiconductor component so that components are spatially grouped with the same requirements for the thermal conductivity of the circuit board. The part of the optoelectronic semiconductor component which is arranged in the first region of the printed circuit board may, for example, be the entirety of the optoelectronic ones

Semiconductor devices include, which make higher demands on the thermal conductivity of the circuit board. The part of the optoelectronic semiconductor component which is arranged in the second region of the printed circuit board can, for example, comprise optically inactive components, which are smaller

Make demands on the thermal conductivity of the circuit board and in particular need no or only a little cooling.

It is particularly possible that the two areas of the circuit board are thermally separated from each other.

For example, between the two areas, a thermally insulating material or a gap

are located. Furthermore, it is possible that the at least one optoelectronic semiconductor component only over the first

Area of the circuit board is arranged and is only in thermal contact with said area. About the second

Area of the circuit board can then, for example, a

be arranged further optoelectronic semiconductor device with lower requirements for the thermal conductivity of the circuit board. In the following, the method described here as well as the optoelectronic semiconductor component described here and the optoelectronic device described here are explained in greater detail on the basis of exemplary embodiments and the associated figures.

FIG. 1 and FIG. 2 show exemplary embodiments of the method described here on the basis of schematic sectional representations.

FIGS. 3 to 6 show schematic representations of FIG

 Embodiments of optoelectronic semiconductor devices described here.

FIG. 7 shows schematic representations of FIG

 Embodiments of optoelectronic devices described here.

The same, similar or equivalent elements are provided in the figures with the same reference numerals. The figures and the proportions of the elements shown in the figures with each other are not to scale

consider. Rather, individual elements may be exaggerated in size for better representability and / or better understanding.

With reference to the schematic sectional view of Figure 1A is a first method step of one described here

Process for producing an optoelectronic

Semiconductor device 9 explained in more detail. In the method, first a carrier 1 is provided with a top surface 1a. The carrier may be, for example, a act temporary carrier, in a subsequent

Process step is removed again or even to a carrier, which after manufacture on the

optoelectronic semiconductor device remains. In which

Carrier may be, for example, a foil, a printed circuit board or generally a plate which is formed with a KunstStoffmaterial, a metal, a ceramic material or a semiconductor material.

On the top surface la of the carrier 1, a plurality of optoelectronic semiconductor devices 2 and a plurality of optically inactive components 4, 5 are arranged. The

Variety of optoelectronic semiconductor devices 2 and optically inactive devices 4, 5 is not on their side surfaces 2c, 4c, 5c in direct contact

to each other. The bottom surface 2b of the at least one

Optoelectronic semiconductor device 2 and the

Bottom surface 4b, 5b of the at least one optically inactive component 4, 5 are the top surface la of the carrier 1

facing.

In the at least one optoelectronic

 Semiconductor component 2 is in the present case a prefabricated component. The optoelectronic semiconductor component 2 may be a

Light emitting diode device or act on a photodiode device.

The at least one optoelectronic semiconductor component 2 comprises at least one optoelectronic semiconductor chip 21, a housing 22, 25, 26, external electrical connection points 24 and a wire contact 23. In the optoelectronic semiconductor chip Semiconductor chip 21 may be, for example, a

Be a light-emitting diode chip or a photodiode chip.

The housing 22, 25, 26 of the at least one optoelectronic semiconductor component comprises at least one

radiation-permeable enclosure 25 and a mechanically stabilizing portion 26, the at least one

Optoelectronic semiconductor chip 21 completely covered on the bottom surface 21b. The radiation-transmissive sheath 25 may be, for example, a

Casting body containing a luminescence conversion material and / or a radiation-scattering material.

Alternatively, it is possible that the radiation-transmissive sheath 25 is optically clear. The mechanically stabilizing part 26 may be, for example, a substrate. Furthermore, the mechanical

stabilizing part 26 and the radiation-transmissive

Enclosure 25 be integrally formed.

The radiation-permeable casing can be made, for example, of silicone, a phosphor, glass, plastic, ceramic,

Epoxy resin, epoxy silicone hybrid material or other transparent or semi-transparent material may be formed. The radiation-transmissive sheath 25 may, for example, comprise one of said materials as matrix material into which reflective or absorbent particles

are introduced.

The part of the housing 26 which covers the optoelectronic semiconductor chip at its bottom surface 21b may, for example, be a cladding which

is radiolucent or radiopaque.

Furthermore, it may be a mechanically stabilizing Serving act. The part of the housing 26 may be formed, for example, of a semiconductor material, a metal, a plastic or a ceramic material.

The outer electrical connection points 24 are between the part of the housing 26, which the bottom surface 21 b

covered, and the at least one optoelectronic

Semiconductor chip 21 is arranged. The outer electrical connection points 24 may be, for example, a metallic layer, a lead frame or a

Via contact act. The external electrical

Connection points 24 are in direct contact with the housing

Contact. The optoelectronic semiconductor chip is electrically connected to the external electrical via the wire contact 23

Connection points 24 connected.

The optically inactive component 4, 5 may be, for example, an electronic component 4. This electronic component 4 can be, for example, a resistor, for example an SMT resistor, a diode, for example a Zener diode, an electronic driver for the at least one optoelectronic semiconductor component, an integrated circuit and / or another electronic component. The electronic component in FIG. 1A is a resistor with two electrical contacts 42 and a resistor body 41.

Furthermore, the optically inactive component may be a mechanical component 5. This mechanical component 5 can be, for example, a sleeve, a frame, an alignment hole, a screw hole, a bushing, a detent or another mechanical component. In which Mechanical component 5 in FIG. 1A is a mechanical feedthrough having a cavity 52 and a sleeve body 51. The cavity 52 is free of a filling material and serves, for example, as a guide tube for a connecting workpiece, such as a screw or a pin.

The at least one optoelectronic semiconductor component 2 and the at least one optically inactive component 4, 5 can be positioned on the carrier 1, for example with a mounting system or a placement system. The connection between the carrier 1 and the at least one optoelectronic semiconductor component 2 and / or the at least one optically inactive component 4, 5 preferably takes place via an adhesive, for example

may have conductive or electrically insulating properties. However, it is also a solder joint or a

other mechanical connection between the carrier 1 and the components 2, 4, 5 possible. The connection can be temporary or permanent, that is to say that it can be removable without leaving any residue and can also leave residues on removal or can not be removed without the at least one optoelectronic semiconductor component 2 and / or the at least one optically inactive component 4. 5 to destroy.

In connection with Figure 1B is another

Process step explained. In this process step, the optoelectronic semiconductor components 2 and the optically inactive components 4, 5 with a

radiation-permeable molded body 6 transforms or enveloped. The forming or wrapping, for example, by means of

Compression molding, liquid injection molding, transfer molding, casting, liquid injection molding, printing or the like done. The Forming or wrapping can be done simultaneously for all components, in particular in a common method step, ie within the scope of manufacturing tolerance.

The radiopaque molded body 6 may, for example, a plastic, epoxy, silicone

Epoxy silicone hybrid material, from a thermal

deformable plastic, consist of a glassy plastic, of a glass or of a ceramic material or contain at least one of these materials. The radiopaque body can

Radiation-reflecting or radiation-absorbing,

be educated. The molded body 6 may appear white, colored or black when exposed to light. It is possible that the radiopaque body 6 more

Materials, such as radiation-reflecting or radiation-absorbing particles comprises. The

For example, reflective particles may be formed of a metal oxide such as titanium dioxide (TiO ₂ ) or contain a metal oxide, and incorporated into a matrix material of the molded article 6, for example of silicone.

The transformation or wrapping of the at least one

Optoelectronic component 2 and the at least one optically inactive device 4, 5 with the

radiopaque shaped body 6 takes place such that the at least one optoelectronic semiconductor component 2 and the at least one optically inactive component 4, 5 on their side surfaces 2c, 4c, 5c on the

radiopaque shaped body 6 are connected to each other. In other words, the side surfaces 2c of the at least one optoelectronic semiconductor component 2 and the side surfaces 4c, 5c of the at least one optically inactive one Component 4, 5 are in direct contact with the radiopaque body 6.

After the forming, all side surfaces 2c, 4c, 5c of the at least one optoelectronic semiconductor component 2 and / or the at least one optically inactive component 4, 5 are completely covered by the molded body 6. Moreover, it is possible that the shaped body 6-unlike in FIG. 1B -the side faces 2c, 4c, 5c of the at least one optoelectronic semiconductor component 2 and / or of the at least one optically inactive component 4, 5 only up to a certain height is covered starting from the top surface 1a of the carrier 1, so that the side surfaces 2c of the at least one optoelectronic semiconductor component 2 and / or the side surfaces 4c, 5c of the at least one optically inactive component 4, 5 free in places

radiopaque shaped body 6 and thus are freely accessible from the outside.

In a further step of the method, the carrier 1 can be removed in a process step, not shown, but it can also on the composite of the shaped body 6, the at least one optoelectronic

Semiconductor device 2 and the at least one optically inactive device 4, 5 remain.

Based on the schematic sectional views and the

schematic top views of Figure 2 is another method described here explained.

FIG. 2A and FIG. 2B show a first one

Method step of a method described here for producing an optoelectronic semiconductor component 9. FIG. 2A shows the method step with reference to FIG

schematic plan view and the figure 2B with reference to a schematic sectional view. On the top surface 2a of the carrier 1 is a plurality of optoelectronic

Semiconductor chips 21 arranged. In this case, external electrical connection points 24 for contacting the

optoelectronic semiconductor chip 21 is provided. One

Wire contact 23 is used for electrical connection between the freely accessible outer electrical connection points 24 and the optoelectronic semiconductor chips 21. The outer electrical connection points 24 penetrate the carrier 1 completely, whereby a contacting of

optoelectronic semiconductor chip 21 from the bottom surface lb of the carrier 1 ago is possible.

FIG. 2C and FIG. 2D show another one

Process step of a method described here for producing an optoelectronic semiconductor device 9. FIG. 2C shows the method step with reference to FIG

schematic plan view and the figure 2D with reference to a schematic sectional view. The optoelectronic semiconductor chips 21 are formed with the radiation-transmissive sheath 25. The forming can be carried out, for example, by means of compression molding, liquid injection molding, transfer molding, casting, liquid injection molding, printing or the like. In this case, connecting webs 29 between the radiation-transmissive sheaths 25 adjacent

form optoelectronic semiconductor chips. By the

Applying the radiation-permeable cladding 25, at least one optoelectronic semiconductor component 2 having a housing 22, comprising a radiation-impermeable cladding 25, and an optoelectronic semiconductor chip 21 is obtained. FIG. 2E and FIG. 2F show another one

Process step of a method described here for producing an optoelectronic semiconductor component 9. FIG. 2E shows the method step with reference to FIG

schematic plan view and the figure 2F based on a schematic sectional view. That at least one

Optoelectronic semiconductor component 2 is now transformed with the radiopaque shaped body 6. In this case, the radiopaque shaped body 6 can cover the side surfaces 2c of the optoelectronic semiconductor components 2 completely or only up to a certain height above the top surface la of the carrier 1.

FIG. 3 shows a first exemplary embodiment of an optoelectronic semiconductor component 9 described here. FIG. 3A shows the exemplary embodiment with reference to FIG

schematic sectional view and the figure 3B with reference to a schematic plan view. The optoelectronic

Semiconductor device 9 can be described with one here

Process are prepared, wherein the carrier 1 is detached. In this embodiment, this includes

optoelectronic semiconductor device 9 at least one

Optoelectronic semiconductor component 2 and at least one optically inactive component 4, 5. The at least one optoelectronic semiconductor component 2 and the at least one optically inactive component 4, 5 are components which are described, for example, in conjunction with FIG. 1 and FIG ,

The at least one optoelectronic semiconductor component 2 and the optically inactive components 4, 5 are connected to each other by means of a radiopaque shaped body 6

connected. This close the top surface 6a and the Bottom surface 6b of the molding flush with the

Radiation passage area 2a of the at least one

Optoelectronic semiconductor device 2 and the bottom surface 2c, 4c, 4b of the at least one

Optoelectronic semiconductor device 2 and / or the at least one optically inactive device 4, 5 from. The bottom surface 2b of the optoelectronic semiconductor component 2, the bottom surface 4b, 5b of the optically inactive component 4, 5 and the bottom surface 6b of the radiopaque body 6 are thus substantially, that is, in the context of manufacturing tolerances, in a plane. Likewise, the radiation passage area 2a of the

Optoelectronic semiconductor device 2 and the top surface 6a of the radiopaque body 6 in the context of manufacturing tolerances in a plane.

FIG. 4 shows by way of a schematic

Sectional view of another embodiment of an optoelectronic semiconductor device described here 9. In this embodiment, the optoelectronic semiconductor device 9 again comprises at least one optoelectronic semiconductor device 2 and at least one optically inactive device 4, 5. The at least one optoelectronic

Semiconductor component 2 comprises at least one

optoelectronic semiconductor chip 21 and a housing 22, 25, 26, which comprises a radiation-impermeable enclosure 27, which laterally to the at least one

optoelectronic semiconductor chip 21 is spaced apart. The radiopaque envelope 27 encloses the

at least one optoelectronic semiconductor chip 21 laterally complete. The radiation-impermeable enclosure 27 may, for example, epoxy resin, silicone, epoxy-silicone hybrid material, a plastic or a be formed otherwise radiopaque material. The radiopaque enclosure 27 may

especially the same material as the

radiation-permeable molded body 6 included.

FIG. 5 shows, on the basis of a schematic sectional representation, a further exemplary embodiment of an optoelectronic semiconductor component 9 described here

Embodiment, the carrier 1 was not detached and the carrier 1 is a connection carrier. The connection carrier may be, for example, a printed circuit board (PCB), a metal core board, a preformed one

Lead frame, a ceramic carrier with traces or the like act. In this case, the radiopaque molded body 6 is in direct contact with the top surface 1a of the carrier 1 and is connected to the top surface la of the carrier 1 without any connection means. At least one optoelectronic semiconductor component 2 is arranged on the carrier 1, with a housing 22, 25, comprising a radiation-permeable enclosure 25, and an optoelectronic semiconductor chip 21. Furthermore, unlike in FIG. 5, at least one optically inactive component 4, 5 can be provided be arranged the carrier 1. The carrier 1 includes freely accessible outer

electrical connection points 24 for the electrical

Contacting the at least one optoelectronic

Semiconductor chips 21. The electrical connection points 24 may be, for example, a metallic layer, a lead frame or a via.

FIG. 6 shows by way of a schematic

Sectional view of a further embodiment of an optoelectronic semiconductor device 9 described here. In this embodiment, the optoelectronic Semiconductor device 9 exactly one optoelectronic semiconductor device 2, which at least one

Optoelectronic semiconductor chip 21 and a housing 22, 25, 26 comprises, at least one optically inactive component 4, 5 and a the optoelectronic semiconductor device 2 and the optically inactive device 4, 5 connecting

radiopaque shaped body. Of the

radiopaque shaped body 6 has its

Side surfaces 6c traces of singulation 61 on. For example, the side surfaces 6c have traces of material removal or sawing process.

FIG. 7 shows schematic sectional representations of FIG

Embodiments of described here

optoelectronic arrangements.

The exemplary embodiment shown in FIG. 7A comprises a printed circuit board 7, which comprises a first region 71 and a second region 72. In the circuit board 7 may, for example, at least partially to a

printed circuit board (PCB), a metal core board, a preformed lead frame, a ceramic carrier with

Conductor tracks or the like act.

The printed circuit board 72 further comprises a cover surface 7a on which an optoelectronic device described herein

Semiconductor component 9 is arranged. At least one optoelectronic semiconductor component 2 of the

optoelectronic semiconductor device 9 over the first

Region 71 of the printed circuit board 7 and is in thermal contact with this first region 71. Further is

at least one optically inactive component 4, 5 arranged over the second region of the circuit board 72 and is available said second region 72 also in thermal contact. The thermal contact, for example, with a

Solder connection or an adhesive, which may be conductive or non-conductive, or other thermal contact means are produced.

The first region 71 of the printed circuit board 7 has a higher thermal conductivity than the second region 72 of FIG

Circuit board 7. In that shown in Figure 7A

Embodiment are the optoelectronic

Semiconductor devices 2 and the optically inactive devices 4, 5 pre-sorted according to their thermal properties and grouped according to these in the optoelectronic semiconductor device 9. This enables effective heat dissipation from the optoelectronic semiconductor device 9.

FIG. 7B shows a schematic view

Sectional view of a further embodiment of an optoelectronic device described here. The

Optoelectronic arrangement again comprises a printed circuit board 7, wherein the printed circuit board 7 now has a first region 71, a second region 72 and a third region 73

includes. The third region 73 is preferably thermally insulating or thermally poorly conductive. The third region 73 may be, for example, a ceramic or air. The optoelectronic

Semiconductor device 9 is above the first region 71 of FIG

Printed circuit board 7 is arranged. In this case, all the components of the optoelectronic semiconductor component 9 are in thermal contact with the first region 71 of the printed circuit board 7. The optoelectronic semiconductor component 9 thus includes

prefers only the components that make high demands on the thermal conductivity of the circuit board 7. This minimizes the area consumption of the optoelectronic

Arrangement. Over the second region 72 of the printed circuit board 7, which again has a lower thermal conductivity than the first region 71, for example an optoelectronic semiconductor component 9 can be arranged, which places less demand on the heat dissipation than the optoelectronic semiconductor component arranged above the first region 71 9. Furthermore, above the second

Region 72 only optically inactive components 4, 5 are arranged. The second region 72 of the printed circuit board 7 can

for example, be a separate circuit board 7.

The method described here is very simple in a common method step due to the forming of the at least one optoelectronic semiconductor component 2 and of the at least one optically inactive component 4, 5.

time-saving and cost-effective, above all, less

Procedural steps are required as in previously used methods. In this case, desired functions can be variably integrated during production into the optoelectronic semiconductor component 9. Furthermore, the arrangement of the

at least one optoelectronic semiconductor component 2 and the at least one optically inactive component 4, 5 take place on the carrier 1 very space-saving, whereby the production of an optoelectronic semiconductor device 9 is made possible, which has in particular good heat conduction properties and optimum area utilization.

The invention is not limited by the description based on the embodiments of these. Rather, the invention encompasses any novel feature as well as any combination of features, including in particular any combination of features in the claims, even if this feature or that combination itself is not explicit in the

Claims or embodiments is given.

Claims

claims 1. A method for producing an optoelectronic Semiconductor component (9) with the following steps:  Providing a support (1) with a cover surface da),  Providing at least one optoelectronic semiconductor component (2) comprising at least one optoelectronic semiconductor chip (21) and a housing (22), Providing at least one optically inactive component (4, 5),  - Arranging the at least one optoelectronic Semiconductor device (2) and the at least one optically inactive device (4, 5) on the top surface (la) of Carrier (1),  - Forming the at least one optoelectronic Semiconductor device (2) and the at least one optically inactive device (4, 5) with a common radiopaque shaped body (6), wherein  a base surface (2b) facing the support at least one optoelectronic semiconductor component (2) and a bottom surface (4b, 5b) facing the support of the at least one optically inactive component (4, 5) and / or a wearer facing away from the carrier  Radiation passage surface (2a) of the at least one Optoelectronic semiconductor device (2) free from radiopaque shaped body (6) remain or be exposed, and  - The shaped body (6) all the radiation passage area (2a) and the bottom surface (2b) of the optoelectronic Semiconductor component (2) connecting side surfaces (2c) of the at least one optoelectronic semiconductor device (2) and all a cover surface (4a, 5a) facing away from the support (1) and the bottom surface (4b, 5b) of the optically inactive one Component (4, 5) connecting side surfaces (4c, 5c) of the at least one optically inactive component (4, 5) at least partially covered. 2. Method according to the preceding claim, wherein the carrier (1) is an auxiliary carrier, which after the Envelope with the radiopaque body (6) is removed. 3. The method according to any one of the preceding claims, in which  the housing (22) comprises at least one radiation-transmissive sheath (25) which is in direct physical contact with the at least one optoelectronic semiconductor chip (21), wherein  the at least one optoelectronic Semiconductor component (2) before forming the at least one optoelectronic semiconductor component (2) and the at least one optically inactive component (4, 5) with the common radiopaque shaped body (6) with the radiation-permeable envelope (25) is enveloped. 4. Method according to one of the preceding claims, wherein the connection between the carrier (1) and the at least one optoelectronic semiconductor component (2) and / or the at least one optically inactive component (4, 5) is non-destructive solvable. 5. Method according to one of the preceding claims, wherein the radiation passage area of the at least one optoelectronic semiconductor component (2) during the Forming with the radiopaque body (6) is covered with a material, whereby the Radiation passage area (2a) of the at least one optoelectronic semiconductor component free from radiopaque shaped body (6) remains. 6. Optoelectronic semiconductor device (9) with  at least one optoelectronic semiconductor component (2) comprising at least one opto-electronic Semiconductor chip (21) and a housing (22), and  at least one optically inactive component (4, 5), wherein  the at least one optoelectronic Semiconductor component (2) and the at least one optically inactive component (4, 5) at their laterally spaced side surfaces (2c, 4c, 5c) via a radiopaque shaped body (6) with each other are connected. 7. Optoelectronic semiconductor component (9) according to the preceding claim, in which the arrangement of the radiopaque Shaped body, the at least one optoelectronic Semiconductor component (2) and the at least one optically inactive component (4, 5) is mechanically self-supporting. 8. Optoelectronic semiconductor component (9) according to one of the preceding claims, in which the radiopaque body is a Cover surface (6a) and a bottom surface (6b), wherein the top surface (6a) of the radiopaque body (6) with the radiation passage surface (2a) of the at least one optoelectronic semiconductor device (2) and at the bottom surface (6b) of the radiopaque Shaped body (6) with the bottom surface (2b) of the at least one optoelectronic semiconductor component (2) and / or with the bottom surface (4b, 5b) of the at least one optically inactive component (4, 5) form a flush surface. 9. Optoelectronic semiconductor component (9) according to one of the preceding claims, wherein the housing (22) is a radiation-transmissive Enclosure (25), with the at least one optoelectronic semiconductor chip (21) is in direct physical contact. 10. Optoelectronic semiconductor component (9) according to one of the preceding claims, in which the radiation-permeable covering (25) directly adjoins the radiopaque shaped body (6). 11. Optoelectronic semiconductor component (9) according to one of the preceding claims, wherein the housing (22) at least one radiation-impermeable enclosure (27), wherein the at least one radiation-impermeable enclosure (27) laterally spaced from the at least one optoelectronic semiconductor chip (21) is arranged and encloses the at least one optoelectronic semiconductor chip (21) at least in the lateral direction. 12. Method or optoelectronic semiconductor component (9) according to one of the preceding claims, in which the at least one optoelectronic Semiconductor device (2) is a prefabricated device, which a housing (22) and external electrical Includes connection points (24), wherein a part of the housing (25) the at least one optoelectronic semiconductor chip (21) on one of Radiation passage surface (2a) facing away from the bottom surface (21b) of the at least one optoelectronic semiconductor chip (21) completely covered and the outer electrical Connection points (24) between the part of the housing (25), which covers the bottom surface (21b), and the at least one optoelectronic semiconductor chip (21) are arranged. 13. Optoelectronic semiconductor component (9) according to one of the preceding claims, in which at least one side surface (6c) of the radiopaque body (6) traces of Singling (61). 14. Optoelectronic semiconductor component (9) according to one of the preceding claims, in which the carrier (1) is a connection carrier (3) and the radiopaque shaped body (6) is in places connectionless with the connection carrier (3) is connected. 15. Optoelectronic arrangement comprising  at least one optoelectronic semiconductor component (9) according to one of the preceding claims and  a printed circuit board (7) comprising a top surface (7a), a first region (71) and a second region (72), wherein the at least one optoelectronic semiconductor component (9) is arranged on the top surface of the printed circuit board (7), at least one optoelectronic semiconductor component (2) of the optoelectronic semiconductor component (9) is arranged in the first region (71) of the printed circuit board (7) and is in thermal contact with this first region (71), at least one optically inactive component (4, 5) of optoelectronic semiconductor component (9) is arranged in the second region (72) of the printed circuit board (7) and is in thermal contact with this second region (72), and  the first region (71) of the printed circuit board has a higher thermal conductivity than the second region (72) of the printed circuit board (7).