WO2015071310A1 - Optoelectronic component and method for the production thereof - Google Patents

Abstract

The invention relates to an optoelectronic component comprising at least one optoelectronic semiconductor chip, at least one optical sensor and an electronic semiconductor chip. The at least one optoelectronic semiconductor chip, the at least one optical sensor and the electronic semiconductor chip are embedded in a common shaped body. Undersides of the at least one optoelectronic semiconductor chip, the at least one optical sensor and the electronic semiconductor chip are not covered by the material of the shaped body and close, flush and co-planer with the undersides of the shaped body.

Description

description

The optoelectronic component and process for Her ^¬ position

The present invention relates to an optoelectronic component according to patent claim 1 and to a method for producing an optoelectronic component according to patent claim 18.

This patent application claims the priority of German patent application DE 10 2013 223 069.9, which is dependent Offenbarungsge ^¬ hereby incorporated by reference.

It is known to use for the interior illumination of automobiles light-emitting diode components. In this case, a plurality of light-emitting diode components is installed in the interior ^¬ space. All light-emitting devices must be centrally controlled ^¬ who, which is associated with a considerable amount of cabling. Often colored RGB light-emitting devices are ver ^¬ applies to their control multiple lines per Leuchtdio ^¬ the device are required. The required cable ^¬ trees increase the vehicle weight and are associated with considerable costs.

An object of the present invention is to provide an optoelectronic device. This object is achieved by an optoelectronic component with the Merkma ^¬ len of claim 1. Another object of the vorlie ^¬ constricting invention is to provide a method for producing an optoelectronic component. This object is achieved by a method having the features of claim 18. In the dependent claims various developments of Wei ^¬ are indicated.

An optoelectronic component according to the invention comprises at least one optoelectronic semiconductor chip, at least at least one optical sensor and an electronic semiconductor chip. The at least one optoelectronic semiconductor chip ^¬, the at least one optical sensor and the electronic semiconductor chip embedded in a common shaped body. Subpages of the at least one optoelectronic semiconductor chip, the at least one optical sensor and the electronic semiconductor chip are not covered by the mate ^¬ rial of the molding and close flush and

Coplanar with a bottom of the molding.

Advantageously, the optoelectronic component may comprise externa ^¬ tremely compact outer dimensions. This facilitates an arrangement of the optoelectronic component in environments with limited space available, for example, an arrangement of the optoelectronic component in motor vehicles. The compact outer dimensions of the optoelectronic component are accompanied by a low weight of the optoelectronic component, which results in a fuel saving in an arrangement of the optoelectronic component in a motor vehicle compared to an arrangement of a heavier optoelectronic component in the motor vehicle.

A plurality of optoelectronic semiconductor chips can be arranged in the form ^¬ body very close together. This advantageously promotes a mixture of emitted by the individual optoelectronic semiconductor chips portions of electromagnetic radiation and thereby enables a homogeneous color mixing.

The optical sensor integrated in the optoelectronic component advantageously makes it possible to control a color or brightness of an electromagnetic radiation emitted by the at least one optoelectronic semiconductor ^{chip of} the optoelectronic component. This will control the color or brightness of the allows at least one optoelectronic semiconductor chip of the optoelectronic component emitted electromagnetic radiation.

The electronic semiconductor chip integrated in the shaped body of the optoelectronic component can advantageously take over control, regulation, data communication and / or other tasks, whereby a control of the optoelectronic component can be simplified. This reduces the individual lines are required to drive the optoelectronic component, which the optoelectronic component, in turn, can contribute to weight and Kostenerspar ^¬ nis.

In one embodiment of the optoelectronic component radiation passage surfaces of the at least one optoelectronic semiconductor chip and the at least one optical sensor ^¬ rule are arranged laterally alongside one another. Vorteilhaf ^¬ ingly is obtained in a particularly compact exporting ^¬ tion of the optoelectronic component.

In one embodiment of the optoelectronic component, the radiation passage areas of the at least one optoelectronic semiconductor chip and the at least one optical sensor are arranged in a common plane. Advantageously, the shaped body of the optoelectronic component can thereby have particularly compact dimensions.

In one embodiment of the optoelectronic component, this has an optical element. The optical element can serve to form an electromagnetic radiation emitted by the at least one optoelectron ^¬ ronic semiconductor chip of the optoelectronic component, for example ^¬ bundle or scatter. Furthermore, the optical element of the optoelectronic component may serve to divide a part of one emitted by the at least one optoelectronic semiconductor chip of the optoelectronic component electromagnetic radiation in the direction of the at least one optical sensor to reflect. As a result, the at least one optical sensor of the optoelectronic component is advantageously made possible to determine a color or brightness of the electromagnetic radiation emitted by the at least one optoelectronic semiconductor chip of the optoelectronic component.

In one embodiment of the optoelectronic component, a cavity is formed between an upper surface of the molding and a lower ^¬ side of the optical element. Before ^¬ geous enough, result from the fact between the upper surface of the molding and the cavity and between the cavity and the bottom surface of the optical element each opti ^¬ specific interfaces, to which a refraction of a light emitted by the at least one optoelectronic semiconductor chip of the optoelectronic component electromagnetic radiation is possible ,

In one embodiment of the optoelectronic component, the optical element to the radiation passage area of the at least one optoelectronic semiconductor chip is ^¬ is arranged. Characterized the optical element vorteilhaf ^¬ ingly allows a deflection of a light emitted by the at least one optoelectronic semiconductor chip of the optoelectronic component electromagnetic radiation.

In one embodiment of the optoelectronic component, the optical element is arranged above the radiation passage area of the at least one optical sensor. Advantage ^¬ adhesive enough, can thereby pass a reflected to an inner boundary surface of the optical element and back guided within the optical element part of a light emitted by the at least one optoelectronic semiconductor chip of the optoelectronic component electromagnetic radiation to the radiation passage surface of the at least one optical sensor of the optoelectronic component and be detected by this , In one embodiment of the optoelectronic component of the at least one optical sensor laterally next to the op ^¬ tables element is arranged. Advantageously, a part of a electromagnetic radiation emitted by the at least one optoelectronic semiconductor chip of the optoelectronic component and reflected back from the optical element can thereby reach the optical sensor and be detected by it.

In one embodiment of the optoelectronic component, the optical element embedded light-scattering Parti ^¬ kel. The embedded in the optical element ^light-¬ scattering particles can contribute to scatter a part of a light emitted by the at least one optoelectronic semiconductor chip of the optoelectronic component electromagnetic radiation to the optical sensor of the optoelectronic component, what the optical sensor detection of a light color or brightness of the made possible by the at least one optoelectronic semiconductor chip emitted electromagnetic radiation. The embedded in the optical element light-scattering particles can also contribute to mix the emittier ^¬ th through the plurality of optoelectronic semiconductor chips of the optoelectronic component electromagnetic radiation components with each other, resulting in a uniform light color of the light emitted by the optoelectronic component electromagnetic ^¬'s radiation.

In one embodiment of the optoelectronic component, the optical element comprises a cylindrical base and a cylindrical socket disposed on the spherical Ele ^¬ ment. Advantageously, it has been found that such an optical element forms part of an electromagnetic radiation emitted by the at least one optoelectronic semiconductor chip of the optoelectronic component into an area surrounding the optical element a surface of the shaped body can reflect, where this part can be detected by the at least one optical sensor of the optoelectronic device. In one embodiment of the optoelectronic component of the at least one optical sensor is formed as a photodiode ^¬ out. Advantageously, this enables reliable detection of electromagnetic radiation by means of the optical sensor designed as a photodiode.

In one embodiment of the optoelectronic component, the at least one optoelectronic semiconductor chip is designed as a light-emitting diode chip. The at least one optoelekt ^¬ tronic semiconductor chip can be designed for example as above flächenemittierender thin-film chip or as volumenemittierender chip. The at least one optoelekt ^¬ tronic semiconductor chip may also include a conversion element for converting a wavelength of a light emitted by the optoelectronic semiconductor chip level of electromagnetic radiation.

In one embodiment of the optoelectronic component, the optoelectronic semiconductor chips comprise a first optoelectronic semiconductor chip, which is provided for emitting electromagnetic radiation in a first spectral range, and a second optoelectronic semiconductor chip, which is provided for emitting electromagnetic radiation in a second spectral range. Advantageously, a mixture of the electromagnetic radiation emitted by the first optoelectronic semiconductor chip and the electromagnetic radiation emitted by the second optoelectronic semiconductor chip thereby makes it possible to generate electromagnetic radiation with an adjustable light color. The optoelectronic component can also comprise further optoelectronic semiconductor chips which are used for

Emission of electromagnetic radiation in other spectral ranges are formed. For example, the opto- electronic component comprise three optoelectronic semiconductor ^¬ chips, which are designed to emit electromagnetic radiation in the red, green and blue or ultraviolet spectral range. One or more of these opto-electronic semiconductor chips can be equipped with a converter ^element for converting a wavelength of an electromagnetic radiation emitted by the optoelectronic semiconductor chip. In one embodiment of the optoelectronic component electrical contact areas of the at least one opto-electronic ^¬ semiconductor chip, the at least one optical rule ^¬ sensor and the electronic semiconductor chips are at ^¬ least partially not covered by the molding. This advantageously makes possible electrical contacting of the at least one optoelectronic semiconductor chip, the at least one optical sensor and the electronic semiconductor chip by means of a rewiring arranged outside the shaped body of the optoelectronic component, for example by means of a planar rewiring layer.

In one embodiment of the optoelectronic component, an electrical Umver ^¬ wiring layer is disposed on the underside of the molded body. Advantageously, the electrical redistribution layer can serve for electrical PLEASE CONTACT ^¬ tion of at least one optoelectronic semiconductor chip, the at least one optical sensor and the electronic semiconductor chips of the optoelectronic component. The electrical redistribution layer can also provide external contact areas of the optoelectronic component.

In one embodiment of the optoelectronic component of the electronic semiconductor chip as a microcontroller and / or as a light-emitting diode driver circuit and / or as

Interface driver circuit and / or formed as a driver circuit for wireless communication. An electronic semiconductor chip designed as a microcontroller can advantageously take over control and regulatory tasks ^¬ men. This can advantageously simplify an external control of the optoelectronic component. In particular, a number of lines required for driving the optoelectronic component can also be reduced. For example, it may be possible to the electro-opto component ^¬ African with a coded digital signal anzusteu ^¬ ren, which is decoded by the electronic microcontroller designed as semiconductor chip. An electronic semiconductor chip embodied as a light-emitting diode driver circuit can be used to drive the at least one optoelectronic semiconductor chip of the optoelectronic component. An electronic semiconductor chip embodied as an interface driver circuit can be used to carry out a data communication.

In one embodiment of the optoelectronic component in the mold body an opening formed for a wireless Datenkommunika ^¬ tion antenna is embedded. Advantageously, it enables the ER for a wireless data communication ^¬ be formed antenna to receive the optoelectronic component, Steuersig ^¬ dimensional via a wireless data communication link. As a result, advantageously no complicated cable connection is required for the operation of the optoelectronic component.

A method of manufacturing an optoelectronic device comprising a step for embedding at least one optoelectronic semiconductor chip, at least one optical sensor and an electronic watch semiconductor chips in egg ^¬ NEN common shaped body. Subpages of the at least one optoelectronic semiconductor chip, the at least one op ^¬ tischen sensor and the electronic semiconductor chip are not covered by the material of the shaped body and conclude flush and coplanar with a bottom of the molding. Advantageously, this method allows a cost- ^effective production of an optoelectronic component with very compact external dimensions. This will be particular characterized in that the at least one optoelectronic ^¬ cal semiconductor chip, the at least one optical sensor and the electronic semiconductor chip in the molded body can be arranged very close to each other. A closely adjacent arrangement of several optoelectronic semiconductor chip in the molded body favored advantageously on top of that a Mi ^¬ research of light emitted by the individual optoelectronic semiconductor chips proportions of electromagnetic radiation and thereby enables a homogeneous color mixing.

In one embodiment of the method, a plurality of sets of in each case at least one optoelectronic semiconductor chip, at least one optical sensor and an optoelectronic semiconductor chip are embedded in a common artificial wafer. Subsequently, the artificial wafer is cut to obtain a plurality of molded articles. Advantageously, the method thereby enables a parallel production ei ^¬ ner plurality of optoelectronic devices in common operations. This allows the production cost per optoelectronic component advantageously be significantly re ^¬ duced.

In one embodiment of the method, this comprises a further step for arranging each of an optical element per molded article obtainable from the synthetic wafer on an upper side of the artificial wafer. As a result, this processing step for a plurality of optoelectronic components to be produced is advantageously also carried out in a common operation, as a result of which the method can be carried out inexpensively. Also, further processing steps such as the bringing about ^¬ a metallization can be done before dividing the Kunstwafers into individual moldings.

The above-described characteristics, features and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more clearly understood in connection with the following description of the embodiments. Games, which are explained in more detail in connection with the drawings. . In this case, in each schematic illustration Figure 1 shows a block diagram of an optoelectronic Bauele ^¬ member;

FIG. 2 shows a sectional side view of the optoelectronic component; FIG.

3 is another sectional side view of optoelekt ^¬ tronic device.

4 shows a perspective view of an optoelectronic component with an optical lens;

5 shows a sectional plan view of the optoelectronic component; 6 is a perspective view of another opto ^¬ electronic device with an optical lens.

FIG. 7 is a sectional plan view of the optoelectronic component; FIG.

8 is a perspective view of another opto ^¬ electronic device with an optical lens. and

9 is a sectional plan view of the optoelectronic component.

1 shows a schematic block diagram of an opto ^¬ electronic component 10. The optoelectronic Bauele ^¬ ment 10 may be, for example, a light-emitting diode device. The optoelectronic component 10 is provided for electromagnetic radiation, for example, visible

Light, to emit. In particular, the optoelectronic component 10 may be provided to white light, colored Emit light or light of adjustable color. The optoelectronic component 10 may be provided for illuminating an interior. In particular, the optoelekt ^¬ tronic device 10 may be provided for illuminating an interior of a motor vehicle.

The optoelectronic component 10 comprises at least one optoelectronic semiconductor chip 200, preferably a plurality of optoelectronic semiconductor chip 200. The optoelectronic semiconductor chip 200 can be, for example Leuchtdio ^¬ denchips (LED chips). In the illustrated example, the optoelectronic semiconductor chips 200 include a first optoelectronic semiconductor chip 210, a second optoelectronic semiconductor chip 220 and a third optoelectronic semiconductor chip 230.

The various optoelectronic semiconductor chips 200 of the optoelectronic component 10 may be designed to emit electromagnetic radiation of different wavelengths (of different colors). By way of example, the first optoelectronic semiconductor chip 210 may be designed to emit electromagnetic radiation having a wavelength from the red spectral range. The second optoelectronic semiconductor chip 220 can be designed, for example, to emit electromagnetic radiation having a wavelength from the green spectral range. The third optoelectronic semiconductor chip 230 can be designed, for example, to emit electromagnetic radiation having a wavelength from the blue spectral range.

The various optoelectronic semiconductor chip 200 may have different semiconductor materials, in particular un ^¬ terschiedliche III-V semiconductor materials that have to achieve the different colors of light. However, the optoelectronic semiconductor chip 200 can also be equipped with Konverterele ^¬ elements that are intended to a wave- lenlänge a generated by the respective optoelectronic semiconductor chip 200 electromagnetic radiation. In this case, the optoelectronic semiconductor chip 200 may be, for example, adapted to generate electromagnetic netic radiation having a wavelength from the ultravio ^¬ crisps spectral range that is converted by the respective converter element in electromagnetic radiation of a different spectral range. The optoelectronic semiconductor chip 200 may ^¬ example, be formed as surface emitting thin-film chips. However, the optoelectronic semiconductor chips 200 can also be designed, for example, as volume-emitting semiconductor chips.

Each of the optoelectronic semiconductor chips 200 of the opto ^¬ electronic component 10 has an upper side 201 and a lower side 202 opposite the upper side 201. If the respective optoelectronic semiconductor chip 200 is a surface-emitting semiconductor chip, then the upper side 201 forms a radiation passage area of the optoelectronic semiconductor chip 200. The upper side 201 can be formed by a crystal surface of the optoelectronic semiconductor chip 200 itself or by a surface of one a crystal surface of the opto ^¬ electronic semiconductor chip 200 arranged Konverterele ^¬ ment be formed. If the respective optoelectronic semiconductor ^chip 200 is a volume-emitting semiconductor chip, then the top side 201 forms, in addition to other surfaces of the optoelectronic semiconductor chip 200, a radiation passage area.

The optoelectronic component 10 further comprises at least one color sensor 300. The at least one color sensor 300 may be ^configured to detect a light color of an electromagnetic radiation striking the color sensor 300. The at least one color sensor 300 can also be forms to detect an intensity or brightness of a fixed ^¬ th spectral component of an ^incident on the color sensor 300 electromagnetic radiation. The at least one color sensor 300 may be formed, for example, as a photodiode. Instead of the at least one color sensor 300, it would also be possible to provide at least one other optical sensor, which is provided, for example, for detecting a brightness. In the illustrated example, the optoelectronic ^{component ¬} construction 10 includes a first color sensor 300, 310, a second color sensor 300, 320 and a third color sensor 300, 330. The first color sensor 310 may be formed, for example, to an intensity of electromagnetic radiation in the red spectral range determine. The second color sensor 320 may, for example, be designed to determine an intensity of an electromagnetic radiation in the green spectral range. The third color sensor 330 can be designed, for example, to determine an intensity of an electromagnetic radiation in the blue spectral range. However, the optoelectronic component 10 could also have fewer or more than three color sensors 300.

The optoelectronic component 10 further comprises one or more electronic semiconductor chips. These electronic semiconductor chips can be formed for example as silicon chips ^¬. In the illustrated example 10, the elec- tronic device optoelekt ^¬ a microcontroller 400, a

Light emitting diode driver circuit 410 and a communication interface parts 420. The microcontroller 400, which Leuchtdi ^¬ oden driver circuit 410 and the communication interface 420 may be integrated in a common electronic semiconductor chip or formed as separate electronic semiconductor chips.

The microcontroller 400 may be designed, for example, to control and regulating tasks in the optoelectronic Take over component 10. The light-emitting diode driver circuit 410 may be ^configured to supply the optoelectronic semiconductor chips 200 of the optoelectronic component 10 with electrical energy. The light-emitting diode driver circuit 410 can also serve to supply power to the at least one color sensor 300. The LED driver 410 may be scarf ^¬ tung this, for example connected via a Energieversor ^¬ supply interface with an external power supply 440th From the power supply 440 can the

Light-emitting diode driver circuit 410 electrical energy bezie ^¬ hen and distribute them within the optoelectronic device 10. The contact to the power supply 440 may comprise, for example, a DC voltage contact (VCC) and a Mas ^¬ se contact (GND).

The communication interface 420 may be used to communicate the optoelectronic device 10 with external devices. The communication interface 420 may be to be ^¬ forms to receive via a data link 430 communication data and / or transmit. By way of example, the communication interface 420 may be designed to receive digital control signals encoded via the data connection 430 and to pass them on to the microcontroller 400, for example. The data link 430 may be a wireline or a wireless data link, such as a

Bluetooth data connection or a data connection according to the IEEE 802.11g standard. If the data connection 430 is a wireless data connection, the Kommunikati ^¬ onsschnittstelle 420 may include a suitable antenna.

The optoelectronic component 10 may be designed to produce white or colored light of an adjustable light color with an adjustable brightness. For this purpose, the optoelectronic component 10 can receive control signals via the data connection 430 which are of a desired type

Set light color and / or brightness. The control signals may be digitally coded, for example. A decoding the control signals can be carried out for example by the Kommunikati ^¬ onsschnittstelle 420 or the microcontroller 400th The light-emitting diode driver circuit 410 can drive the optoelectronic semiconductor chips 200 in such a way that the optoelectronic component 10 emits light of the desired brightness and color.

By integrating the electronic semiconductor chips 400, 410, 420 in the optoelectronic component 10, a simple control of the optoelectronic component 10 is made possible. In this case, no ge ^¬ separated control signals for the individual optoelectronic semiconductor chips 200 of the optoelectronic component 10 must be ^¬ be made available from an external device. Rather, the control of the optoelectronic component 10 takes place centrally via the data connection 430. In the case of a wired data connection 430, the data connection 430 requires only a few or even only a single data line. In the case of a wireless data link 430, the data link 430 does not require any electrical power at all. For the central

Power supply 440 of the optoelectronic device 10 may be sufficient for two lines. If a ground contact in the area of the optoelectronic component 10 is available in any case (for example in the form of a protect vehicle of a motor vehicle), so 440 requires the Energiever ^¬ supply even merely a line. As a result, a small number of lines can be sufficient overall for driving the optoelectronic component 10. The light color and the brightness of the electromagnetic radiation emitted by the individual optoelectronic semiconductor chips 200 of the optoelectronic component 10 may depend on a temperature of the optoelectronic semiconductor chips 200 and on an operating duration of the optoelectronic semiconductor chips 200. This complicates the control of the brightness and / or color of light emitted by the opto-electronic component ^¬ 10 Total light. In order to enable a particularly accurate adjustment of the light color and the brightness of the transmitted through the opto-electronic component 10 from ^¬ electromagnetic radiation, the light color and brightness generated by the optoelectronic component 10 the electromagnetic radiation at the optoelectronic component 10 by means of the Minim ^¬ can tens a color sensor 300 can be detected. The min ^¬ least a color sensor 300 of the optoelectronic component 10 detected by the light color is supplied as feedback information to electronic semiconductor chips 400, 410 of the optoelectronic component 10 and allows a control of the brightness and the color of light the electromagnetic radiation generated by the opto-electro ^¬ African component 10th Has a current generated by a of the optoelectronic semiconductor chip 200 portion of the electromagnetic radiation is too high or too low intensity, so an on ^¬ adjustment of the intensity of the radiation emitted by the respective optoelectronic semiconductor chip 200 electromagnetic radiation can take place. This regulation can be carried out by the microcontroller 400 integrated in the optoelectronic component 10. The microcontroller 400 drives the light-emitting diode driver circuit 410 in the sense of the control target. The light-emitting diode driver circuit 410 controls the optoelectronic semiconductor chips 200 accordingly.

The optoelectronic semiconductor chips 200, the at least one color sensor 300 and the at least one electronic semiconductor chip 400, 410, 420 of the optoelectronic component 10 are embedded in a common molded body 100. Fig. 2 shows a schematic sectional view of the mold Seitenan ^¬ body 100.

The molded body 100 may be made by, for example, a molding method. For example, the shaped body 100 can be produced by film-assisted transfer molding. The optoelectronic semiconductor chips 200, the at least one color sensor 300 and the at least one electronic sensor are preferred Semiconductor chip 400, 410, 420 already embedded during the production of the molded body 100 in the molded body 100 and formed by the material of the molded body 100. For this purpose, the chips 200, 300, 400, 410, 420 can be positioned, for example, on a foil and formed by the material of the shaped body 100.

The molded body 100 comprises an electrically insulating synthetic ^¬ material on, for example, a polymer such as an epoxy xidharz. The material of the mold body 100 may comprise a fill ^¬ material. The material of the molded body 100 has be ^¬ vorzugt a thermal expansion coefficient whose value at which the thermal expansion coefficient of the chips ^¬ 200, 300, 400, 410, 420 is as close as possible. If the optoelectronic semiconductor chip 200 oberflächenemit ^¬ animal forming semiconductor chips, the material of the mold ^¬ body 100 is preferably formed for reflecting light emitted by the optoelekt ^¬ tronic semiconductor chip 200 electromagnetic radiation. If the optoelectronic semiconductor chip 200 are formed as semiconductor chips from volumenemittierende ^¬, the material of the molded body 100 is before Trains t ^¬ transparent ausgebil ^¬ det for light emitted by the optoelectronic semiconductor chip 200 electromagnetic radiation.

The molded body 100 has a substantially planar upper side

101 and one of the top 101 opposite bottom

102 on. The tops 201 of the embedded into the mold body 100, the optoelectronic semiconductor chip 200 are not covered in the shown in FIG. 2, through the material of the molded body 100 ^¬. Instead, the upper sides 201 of the optoelectronic semiconductor chips 200 are substantially flush and coplanar with the upper side 101 of the molded body 100. If the molded body 100 is formed transparent to light emitted by the optoelectronic semiconductor chip 200 electromagnetic ^¬ specific radiation, the tops 201 of the optoelectronic semiconductor chip 200 could, however, be covered 100 by the material of the shaped body. The color sensors 300 have an upper side 301 and an upper side 302 opposite the upper side 301. The upper ^¬ sides 301 of the color sensors 300 can be formed by a crystal surface of the respective color sensor 300th Depending ^¬ of the at least one color sensor 300, however, could also have one arranged on a crystal surface of the respective color sensors 300 ^¬ color filter. In this case, an upper surface of the color filter forms the upper surface 301 of the respective color sensor. The top 301 of each color sensor 300 forms a radiation passage area of the particular color sensor 300. In the radiation passage area of each ^¬ weiligen color sensor 300 incident electromagnetic radiation can be detected by the respective color sensor 300th

The upper sides 301 of the color sensors 300 of the optoelectronic component 10 are not covered by the material of the molded body 100 in the illustrated example. Rather, the tops 301 of the color sensors 300 include substantially flush and coplanar with the upper surface 101 of the Formkör ^¬ pers 100 from. If the material of the molded body 100 transpa rent ^¬ for light emitted by the optoelectronic semiconductor chip 200 is electromagnetic radiation, so the tops of the color sensors 301 could be covered 300 100 but also by the material of the shaped body. In the schemati ^¬ rule side view of FIG. 2, the first color ^¬ sensor 310 and the second color sensor 320 are only visible. The electronic semiconductor chips 400, 410, 420, of which in the schematic illustration of FIG. 2, only the microcontroller 400 can be seen, each have a top side 401 and the top 401 on opposing lower side ^¬ 402nd In the schematic representation of FIG. 2, the upper sides 401 of the electronic semiconductor chips

400, 410, 420 covered by the material of the molded body 100. It would also be possible, however, the tops 401 of electronic semiconductor chip 400, 410, 420 flush with the top 101 of the molded body 100 form.

Example 2 shown are on the lower sides 202 of the optoelectronic semiconductor chip 200 in in FIG. Respectively disposed a plurality of electrical contact pads 203, which serve for the electrical contacting of the rule ^¬ optoelectronic semiconductor chip 200. In the example shown, in each case a plurality of electrical contact surfaces 303 which serve to contact the color sensors 300 are arranged on the undersides 302 of the color sensors 300. Which for the electrical contact of the electronic semiconductor chips are on the lower sides 402 of the electronic semiconductor chips 400, 410, 420 per ^¬ weils disposed a plurality of electrical contact surfaces 403 in the example shown, 400, 410, 420 are used.

The undersides 202, 302, 402 of the optoelectronic semiconductor chips 200, the color sensors 300 and the electronic semiconductor chips 400, 410, 420 are not covered by the material of the molded body 100 in the illustrated example. Instead ^¬ which close the bottoms 202, 302, 402 of the optoelectronic semiconductor chip 200 of the color sensors 300 and the electronic semiconductor chips 400, 410, 420 substantially flush and coplanar with the lower surface 102 of the molding 100 from.

At the bottom 102 of the mold body 100 of the optoelectronic ^¬ rule component 10 a redistribution layer 110, shown only schematically in Fig. 2 is arranged. The rewiring layer 110 provides suitable electrically conductive

Connections between the electrical contact surfaces 203 of the optoelectronic semiconductor chips 200, the electrical contact surfaces 303 of the color sensors 300 and the electrical contact surfaces 403 of the electronic semiconductor chips 400, 410, 420 ago.

The redistribution layer 110 also provides external con ^¬ contacts of the optoelectronic component 10 for contacting of the optoelectronic component 10 ready. The external contact surfaces of the optoelectronic component 10 may be formed, for example, as SMT contact surfaces. In this case, the optoelectronic component 10 is suitable as a surface-mountable component for electrical contacting by reflow soldering (reflow soldering). However, the external contacts of the optoelectronic component 10 can also be designed as electrically conductive tracks which serve as contacts in a plug.

The redistribution layer 110 may comprise one or more Metalli ^¬ sierungslagen, which are optionally separated from each other by electrically insulating layers. Preferably, the redistribution layer 110 is arranged by planar processes on the underside 102 of the molded body 100. However, the rewiring ^¬ wiring layer 110 may, for example, also include bonding ^¬ wires. Alternatively or additionally, it is possible to integrate some or all of the electrically conductive connections between the optoelectronic semiconductor chips 200, the color sensors 300 and the electronic semiconductor chips 400, 410, 420 into the molded body 100. In this case, it is not absolutely necessary for the undersides 202, 302, 402 of the chips 200, 300, 400, 410, 420 to be exposed on the underside 102 of the molded body 100.

Due to the substantially planar top surface 101 of the molding 100, the opto-electronic device 10 for paying ^¬ rich optical applications is suitable. For example, the flat upper side 101 of the molded body 100 makes it possible to use the upper sides exposed flush with the upper side 101 of the molded body 100

201 of the optoelectronic semiconductor chips 200, an arrangement of the shaped body 100 of the optoelectronic component 10 on a light guide such that on the upper sides 201 of the optoelectronic semiconductor chips 200 emitted electromagnetic radiation is coupled directly into the light guide. In this way, the light guide allows transport and distribution of an electromagnetic radiation generated by the optoelectronic component 10 in a room to be illuminated, for example in an interior of a motor vehicle.

Fig. 3 shows a schematic sectional side view of the molded body 100 of the optoelectronic component 10 in ei ^¬ nem the illustration of FIG. 2 following processing status. At the top 101 of the shaped body 100, an optical ^¬ table lens 500 has been arranged. However, the optical lens 500 is optional and may be omitted. Instead of the optical lens 500, another optical element could also be arranged on the upper side 101 of the molded body 100, for example a converter element for converting a wavelength of electromagnetic radiation. The optical lens 500 may serve to focus light emitted from the opto-electro ^¬ African semiconductor chips 200 of the optoelectronic Bauele ^¬ ments 10 electromagnetic radiation or in any other way into a desired angular distribution. Further, the optical lens 500 may serve to separate from the individual optoelectronic semiconductor chips 200,

210, 220, 230 generated portions of the electromagnetic radiation emitted by the optoelectronic component 10 to mix together to ensure a radiation of electromagnetic radiation of a uniform light color in different spatial directions. Further, the optical lens 500 may serve to reflect part of the light emitted by the optoelectronic semiconductor chip 200 electromagnetic radiation to the at least one color sensor 300 to a determination of the color of light emitted by the optoelectronic component 10 electromagnetic ^¬ tables radiation by means of at least one color sensor 300 to allow.

The optical lens 500 preferably has a transparent to light emitted by the optoelectronic semiconductor chip 200 electromag netic radiation ^¬ material. For example, the optical lens 500 may comprise a silicone. In the material of the optical lens 500, light scattering particles be embedded in order to support a mixing of the radiation components of the individual optoelectronic semiconductor chips 200, 210, 220, 230. The scattering particles embedded in the material of the optical lens 500 may have, for example, 10 ₂ or Al ₂ O ₃ .

The optical lens 500 has an upper side 501 and a lower side 502 opposite the upper side 501. The Un ^¬ underside 502 of the optical lens 500 faces the upper surface 101 of the shaped body 100th The optical lens 500 may be formed, for example, by a molding process on the upper surface 101 of the molded body 100, for example, by compression molding. However, the optical lens 500 may be manufactured separately from the molded body 100 provides and have been arranged as a pre-made optical lens 500 on the upper side 101 of the molding ^¬ 100th

The production of the optoelectronic component 10 described with reference to FIGS. 2 and 3 by embedding the optoelectronic semiconductor chips 200, of the at least one

Color sensor 300 and the at least one electronic half ^¬ semiconductor chip 400, 410, 420 in the molding 100 through From ^¬ formation of the redistribution layer 110 and by arranging the optical lens 500 can preferably take place for a plurality of opto-electronic devices 10 simultaneously in common operations. In this method, several sets of a plurality of optoelectronic semiconductor chips 200 are at least one color sensor 300 and Minim ^¬ least an electronic semiconductor chip 400, 410, embedded in egg nen common art wafer 420th This art wafer is later cut to obtain a plurality of molded articles 100. In each of the molded body 100 thus obtainable is a plurality of optoelectronic semiconductor chips 200, Minim ^¬ least one color sensor 300 and at least one embedded electronic semiconductor chip 400, 410, 420th Also disposing the redistribution layer 110 on the lower ^¬ side 102 of the molded body 100 and the positioning of the optical lens 500 on the upper side 101 of the molding 100 is preferably carried out even on Base of the art wafer for all of the synthetic wafer avai ^¬ chen molded body 100 together prior art wafer is divided into individual moldings 100th The design of the optical lens 500 of the optoelectronic component 10 and the arrangement of the optical lens 500 relative to the positions of the optoelectronic semiconductor chips 200 and color sensors 300 embedded in the molded body 100 are shown only in a highly schematic manner in FIG. Subsequently possible Substituted ^¬ refinements of the optical lens 500 will be explained with reference to Figures 4 through. 9 The optoelectronic components explained with reference to FIGS. 4 to 9 are to be understood as concretizations of the abstract or schematic representation of the optoelectronic component 10 and have all the properties explained with reference to the optoelectronic component 10 and FIGS. 1 to 3. Therefore, the same reference numerals are used in Figures 4 to 9 for corresponding components as in Figures 1 to 3. Only for those components in which the optoelectronic devices described with reference to Figures 4 to 9 differ from each other, their own reference numerals are used below.

Fig. 4 shows a schematic perspective view of an optoelectronic device 11 with a mold body 100 and above the top surface 101 of the molding 100 510. at ^¬ subsidiary optical lens Fig. 5 shows a schemati ^¬ cal and at an interface between the upper surface 101 of the shaped body 100 and the underside 502 of the optical lens 510 cut plan view of the top 101 of the Formkör ^¬ pers 100. The illustration of FIG. 4 is the sake of clarity, partly made transparent.

The optical lens 510 of the optoelectronic component 11 includes a base 511 and a on the base 511 angeord ^¬ scribed spherical member 512. The base 511 of the optical lens 510 has a circular cylindrical outer shape with an outer surface 513. A longitudinal axis of the base 511 is perpendicular to the top 101 of the molding 100 orien ^¬ oriented. The outer circumferential surface 513 of the base 511 of the optical lens ^¬ rule 510 may point in the direction perpendicular to the top surface 101 of the molding 100, for example, a height of 3.1 mm up. The outer circumferential surface 513 of the base 511 of the optical lens ^¬ rule 510 may be transparent or reflective ausgebil ^¬ det.

At the top 101 of the molded body 100 facing away from the longitudinal end of the base 511 of the optical lens 510 this carries the spherical element 512. The radius of the spherical element 512 preferably corresponds to that of the base 511 parallel to the top 101 of the molding 100 and can at ^¬ For example, be 2.5 mm. The base 511 of the optical lens 510 has, at its longitudinal end facing away from the upper side 101 of the molded body 100, a hemispherical recess with the radius of the spherical element 512. In this recess, the spherical element 512 is arranged such that a lower half of the spherical member 512 disposed in the recess of the base 511 and is circumscribed by the jacket ^¬ surface 513 of the base 511, while an upper half of the spherical element 512 on the Socket 511 of the optical lens 510 rises. The entire optical lens

In this case, 510 may have a height of 5.6 mm in the direction perpendicular to the upper side 101 of the molded body 100. In this case, the end of the spherical element 512 of the optical lens 510 facing the upper side 101 of the molded body 100 can be arranged 0.6 mm above the upper side 101 of the molded body 100.

The base 511 and the spherical element 512 of the optical lens 510 may also be made in one piece. The base

511 and the spherical element 512 of the optical lens 510 may have the same material.

The upper sides 201 of the optoelectronic semiconductor chips 200 of the optoelectronic component 11 are located on a lateral section 120 covered by the optical lens 510 Top 101 of the molded body 100 is arranged. The optical lens 510 is mentioned about the optoelectronic semiconductor chip 200 on the top 101 of the molding 100 angeord ^¬ net. The upper sides 201 of the optoelectronic semiconductor chips 200, which terminate flush with the upper side 101 of the molded body 100, thus directly adjoin the underside 502 of the optical lens 510 of the optoelectronic component 11. Emitted by the optoelectronic semiconductor chip 200 of the optoelectronic component 11 electro-magnetic radiation is thereby coupled directly into the optical lens 510 and converged by the optical lens 510 in a narrow space angle range of, for example, +/- 30 ^0th By spatially close arrangement of the individual optoelectronic semiconductor chips 200, 210, 220, 230 of the opto-see component 11 to each other and optionally by embedded into the Ma ^¬ TERIAL of the optical lens 510 scattering particles also is a mixing of the light emitted by the individual optoelectronic semiconductor chip 200 radiation components achieved in the far field of the optoelectronic component 11.

In addition, a part of the light emitted by the optoelectronic semiconductor chip 200 electromagnetic radiation to the top side 101 of the molding 100 is zurückreflek ^¬ advantage through the optical lens 510 of the opto-electro ^¬ African component. 11 To the area covered by the optical lens 510 latera ^¬ len portion 120 of the top 101 of the shaped body ge ^¬ reached only little electromagnetic radiation 100th Due to the geometry of the optical lens 510 enters a higher arrival part of the light reflected by the optical lens 510 ^¬ electro-magnetic radiation to a optical lens 510 umlau ^¬ fend surrounding lateral portion 130 of the top 101 of the mold body 100. The optical lens 510 surrounding circle ^¬ annular lateral portion 130 may for example have an outer radius of about 4.2 mm. In lateral sections of the upper side 101 of the molded body 100 which are farther from the optical lens 510, only a small part of the light passes through the optoelectronic semiconductor chips 200 emitted and reflected by the optical lens 510 electromagnetic radiation.

The color sensors 300 of the optoelectronic component 11 are therefore arranged below the lateral portion 130 of the upper surface 101 of the molded body 100 surrounding the optical lens 510 so that the upper sides 301 of the color sensors 300 of the optoelectronic component 11 are exposed in the lateral portion 130 surrounding the optical lens 510.

As a result, a portion of the electromagnetic radiation emitted by the optoelectronic semiconductor chips 200 and reflected by the optical lens 510, which is sufficient for determining the light color, reaches the color sensors 300 of the optoelectronic component 11.

Fig. 6 shows a schematic perspective view of an optoelectronic device 12 with the molded body 100 and a over the top 101 of the molding 100 520. at ^¬ subsidiary optical lens Fig. 7 shows a schematic see and at an interface between the upper surface 101 of the shaped body 100 and the underside 502 of the optical lens 520 cut plan view of the top 101 of the Formkör ^¬ pers 100. The optical lens 520 is ausgebil ^¬ det as a convex-concave lens. The optical lens 520 has a lower part with egg ^¬ ner circular cylindrical outer side and a hemispherical upper part. The lower part and the upper part of the opti ^¬ rule lens 520 are integrally formed contiguous. The semi-spherical upper portion of the optical lens 520 bil ^¬ det the concave upper surface 501 of the optical lens 520th

At the upper side 101 of the shaped body 100 facing Un ^¬ terseite 502 of the optical lens 520, a likewise hemispherical cavity 521 is formed. The hemispherical cavity 521 has a smaller radius than the hemispherical upper part of the optical lens 520. The between the material of the optical lens 520 and the molded body 100th enclosed cavity 521 is filled with air or other gas.

The upper sides 201 of the optoelectronic semiconductor chips 200 of the optoelectronic component 12 are arranged below the cavity 521 of the optical lens 520. Emitted at the tops 201 of the optoelectronic semiconductor chip 200 electromagnetic radiation passes through the cavity 521 in the optical lens 520, is mixed, and by the optimal see lens 520 tronic in a limited Raumwin ^¬ angle range of, for example +/- 20 ⁰ above the optoelekt ^¬ Component 12 radiated.

In addition, part of the electromagnetic radiation emitted by the optoelectronic semiconductor chips 200 is reflected on the optical lens 520 to the top side 101 of the molded body 100. Fig. 7 shows that a major part of the light reflected by the optical lens 520 electromagnetic radiation in an inner uncovered portion 140 of the cavity 521 underneath the optical lens 520 is incident on the upper ^¬ page 101 of the body 100 form. In the inner un ^¬ covered portion 140, covered by the optical lens 520 lateral portion 120 of the top 101 of the shaped body 100 and the optical lens 520 surrounding la teralen section 130 of the top 101 of the molded body 100 passes through no significant portion of the optoelectronic semiconductor chips 200 emitted electromagnetic radiation. For this reason, the at least one color ^¬ sensor 300 is disposed in the optoelectronic component 12 below the cavity 521 of the optical lens 520th The

Upper surface 301 of the at least one color sensor 300 is exposed in the inner uncovered portion 140 of the top 101 of the mold body ^¬ 100th FIG. 8 shows a schematic perspective view of an optoelectronic component 13 with the molded body 100 and one above the upper side 101 of the molded body 100. ordered optical lens 530. FIG. 9 shows a schematic ^plan view of the upper side 101 of the molded body 100 cut at an interface between the underside 502 of the optical lens 530 and the upper side 101 of the molded body 100.

The optical lens 530 has a rotational symmetry in a direction perpendicular to the upper side 101 of the molded body 100. 530 at its 100 abge ^¬ turned from the top side 101 of the top molding 501 has the optical lens on a Ver ^¬ deepening 532nd On its underside 502 facing the upper side 101 of the molded body 100, the optical lens 530 has a cavity 531. The enclosed between the material of the optical lens 530 and the molded body 100 hollow ^¬ space 531 is filled with air or other gas.

The optoelectronic semiconductor chip 200 of the optoelectronic component 13 are arranged below the cavity 531 of the op ^¬ tables lens 530, so that the tops 201 of the optoelectronic semiconductor chip 200 in the inner uncovered portion 140 of the top 101 of the shaped body 100 below the cavity 531 of the optical lens 530 freilie ^¬ gen. of the optoelectronic semiconductor chip 200 emitted electromagnetic radiation can thus pass over the hollow ^¬ space 531 in the optical lens 530 are mixed by the optical ^¬ specific lens 530 and the exit at least partially directed radiation from the optical lens 530.

A part of the light emitted by the optoelectronic semiconductor chip 200 electromagnetic radiation is reflected by the optical lens 530 in the direction of the upper surface 101 of the Formkör ^¬ pers 100th 9 shows that parts of the electromagnetic radiation reflected by the optical lens 530 to the inner uncovered portion 140 of the upper side 101 of the molded body 100 below the cavity 531 of the optical lens 530 and in the lateral portion 130 of the upper side 101 surrounding the optical lens 530 outside of the molded body 100 reach. No substantial part of the electromagnetic radiation emitted by the optoelectronic semiconductor chips 200 reaches the lateral section 120 of the upper side 101 of the molded body 100 which covers the inner uncovered section 140 and is covered by the optical lens 530. In the optoelectronic component 13, the at least one color sensor 300 can thus either in the inner uncovered portion 140 of the top 101 of the molded body 100 below the cavity 531 of the optical lens 530 or in which the optical lens 530 surrounding lateral portion 130 of the ^¬ top 101st of the molded body 100 are arranged. In the example shown in Figu ^¬ ren 8 and 9 example, the optoelectronic component comprises three color sensors 13 300, the upper sides 301 surrounding the optical lens 530 lateral portion 130 of upper surface 101 of the molded body free 100.

The invention has been further illustrated and described with reference to the preferred Ausführungsbei ^¬ games. However, the invention is not limited to the disclosed examples. Rather, other variations may be deduced therefrom by those skilled in the art without departing from the scope of the invention.

Reference sign list

10 optoelectronic component

 11 optoelectronic component

 12 optoelectronic component

 13 optoelectronic component

100 moldings

 101 top

 102 bottom

 110 redistribution layer

 120 covered lateral section

 130 surrounding lateral section

 140 inner uncovered section

200 optoelectronic semiconductor chip

 201 top (radiation passage area)

 202 bottom

 203 electrical contact surface

 210 first optoelectronic semiconductor chip (red)

220 second optoelectronic semiconductor chip (green)

230 third optoelectronic semiconductor chip (blue)

300 color sensor

 301 upper side (radiation passage area)

 302 bottom

 303 electrical contact surface

 310 first color sensor (red)

 320 second color sensor (green)

 330 third color sensor (blue)

400 microcontroller

 401 top

 402 bottom

 403 electrical contact area

 410 LED driver circuit

 420 communication interface / antenna

430 data connection Power supply optical lens top

Bottom optical lens socket

spherical element lateral surface optical

Cavity optical lens

cavity

 deepening

Claims

Patent claims 1. Optoelectronic component (10, 11, 12, 13) with at least one optoelectronic semiconductor chip (200), at least one optical sensor (300) and an electronic semiconductor chip (400, 410, 420), wherein the at least one optoelectronic ^{semiconductor} chip (200), the at least one optical sensor (300) and the electronic semiconductor chip (400, 410, 420) in a common molded body (100) are embedded, wherein undersides (202, 302, 402) of the at least one optoelectronic semiconductor chip (200), the at least one optical sensor (300) and the electronic semiconductor chip (400, 410, 420) are not covered by the material of the shaped body (100) and are flush and coplanar with an underside (102) of the shaped body (100). 2. Optoelectronic component (10, 11, 12, 13) according to ^claim 1, wherein radiation passage surfaces (201, 301) of the at least one optoelectronic semiconductor chip (200) and the at least one optical sensor (300) are arranged laterally next to one another. 3. Optoelectronic component (10, 11, 12, 13) according to ^claim 2, wherein the radiation passage surfaces (201, 301) of the at least one optoelectronic semiconductor chip (200) and the at least one optical sensor (300) are arranged in a common plane. 4. Optoelectronic component (10, 11, 12, 13) according to one of the preceding claims, wherein the optoelectronic component (10, 11, 12, 13) has an optical element (500, 510, 520, 530). 5. Optoelectronic component (12, 13) according to claim 4, wherein a cavity (521, 531) is formed between an upper side (101) of the shaped body (100) and a lower side (502) of the optical element (520, 530). 6. Optoelectronic component (10, 11, 12, 13) according to ^one of claims 2 and 3 and one of ^claims 4 and 5, wherein the optical element (500, 510, 520, 530) is arranged above the radiation passage surface (201) of the at least one optoelectronic semiconductor chip (200). 7. Optoelectronic component (12) according to one of ^claims 2 and 3 and one of claims 4 to 6, wherein the optical element (520) is arranged above the radiation ^¬ passage surface (301) of the at least one optical sensor (300). Optoelectronic component (10, 11, 13) according to one of claims 2 and 3 and one of claims 4 to 6, wherein the at least one optical sensor (300) is arranged laterally next to the optical element (500, 510, 530). 9. Optoelectronic component (10, 11, 12, 13) according to ^{one of} claims 4 to 8, wherein the optical element (500, 510, 520, 530) has ^embedded light-scattering particles. 10. Optoelectronic component (11) according to one of ^claims 4 to 9, wherein the optical element (510) comprises a cylindrical ^base (511) and a spherical element (512) arranged on the cylindrical base (511). 11. Optoelectronic component (10, 11, 12, 13) according to one ^of the preceding claims, wherein the at least one optical sensor (300) is designed as a ^photo diode. 12. Optoelectronic component (10, 11, 12, 13) according to one of the preceding claims, wherein the at least one optoelectronic ^{semiconductor} chip (200) is designed as a light-emitting diode chip. 13. Optoelectronic component (10, 11, 12, 13) according to one ^of the preceding claims, wherein the optoelectronic semiconductor chips (200) comprise a first optoelectronic semiconductor chip (201) which is designed to emit electromagnetic radiation in a first spectral range, and a second optoelectronic semiconductor chip (202) which is designed to emit electromagnetic radiation in a second spectral range. 14. Optoelectronic component (10, 11, 12, 13) according to one ^of the preceding claims, wherein electrical contact surfaces (203, 303, 403) of the ^{at least} one optoelectronic semiconductor chip (200), the at least one optical sensor (300) and the electronic semiconductor chip (400, 410, 420) are at least partially not covered by the shaped body (100). are. 15. Optoelectronic component (10, 11, 12, 13) according to one ^of the preceding claims, wherein an electrical rewiring layer (110) is arranged on the underside (102) of the shaped body (100). 16. Optoelectronic component (10, 11, 12, 13) according to one ^of the preceding claims, wherein the electronic semiconductor chip (400, 410, 420) is designed as a microcontroller (400) and/or as a light-emitting diode ^driver circuit (410) and/or as an interface driver circuit (420) and/or as a driver circuit for wireless communication. 17. Optoelectronic component (10, 11, 12, 13) according to one ^of the preceding claims, wherein an antenna (420) designed for wireless data communication (430) is embedded in the shaped body (100). 18. Method for producing an optoelectronic component (10, 11, 12, 13) with the following step: - Embedding at least one optoelectronic semiconductor chip (200), at least one optical sensor (300) and one electronic semiconductor chip (400, 410, 420) in a common molded body (100), wherein undersides (202, 302, 402) of the at least one optoelectronic semiconductor chip (200), the at least one optical sensor (300) and the electronic semiconductor chip (400, 410, 420) are not covered by the material of the shaped body (100) and are flush and end coplanar with an underside (102) of the shaped body (100). 19. Method according to claim 18, wherein several sets of at least one opto-electronic semiconductor chip (200), at least one optical sensor (300) and one electronic semiconductor chip (400, 410, 420) are embedded in a common synthetic wafer, wherein the artificial wafer is divided to obtain a plurality of shaped bodies (100). 20. Method according to claim 19, wherein the method includes the following further step: - Arranging one optical element each (500, 510, 520, 530) per molded body (100) available from the artificial wafer on an upper side of the artificial wafer.