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WO2015049983A1 - Dispositif de conversion photoélectrique et procédé de production de dispositif de conversion photoélectrique - Google Patents

Dispositif de conversion photoélectrique et procédé de production de dispositif de conversion photoélectrique Download PDF

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Publication number
WO2015049983A1
WO2015049983A1 PCT/JP2014/074497 JP2014074497W WO2015049983A1 WO 2015049983 A1 WO2015049983 A1 WO 2015049983A1 JP 2014074497 W JP2014074497 W JP 2014074497W WO 2015049983 A1 WO2015049983 A1 WO 2015049983A1
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Prior art keywords
photoelectric conversion
layer
conductive layer
conversion module
substrate
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English (en)
Japanese (ja)
Inventor
古宮　良一
裕一 一ノ瀬
福井　篤
山中　良亮
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Sharp Corp
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Sharp Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/209—Light trapping arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • H01G9/2081—Serial interconnection of cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a photoelectric conversion device and a method for manufacturing the photoelectric conversion device.
  • Patent Document 1 describes a photovoltaic cell using a chromophore coated on titanium oxide as a new type of solar cell.
  • the photovoltaic cell described in Patent Document 1 has a structure in which a metal carrier, a metal oxide semiconductor layer made of titanium oxide, a monolayer of a sensitizer or a chromophore, an electrolyte layer, and an electrode are provided in this order between insulating layers. is doing.
  • a redox-based 10 ⁇ 2 M solution containing 1 mM HClO 4 is used for the electrolyte layer of the photovoltaic cell described in Patent Document 1.
  • Non-Patent Document 1 discloses a W-type series-connected dye-sensitized solar cell in which a plurality of dye-sensitized solar cells are connected in series.
  • the module is M.M. Proposed by Somemeling et al.
  • Patent Document 2 proposes a solar cell module in which dye-sensitized solar cells using nanoporous photoelectrodes on which a sensitizing dye is adsorbed are electrically connected in series.
  • Non-Patent Document 1 and Patent Document 2 since the photoelectric conversion layer is porous, the amount of power generation is unlikely to decrease even when light does not enter the light-receiving surface perpendicularly. Electricity can be generated by scattered light reflected from surrounding objects. For this reason, it has been studied to install these solar cell modules on a surface having an angle close to the vertical such as a wall surface to produce a solar power generation device.
  • the embodiment which is an example of the present invention is a photoelectric conversion device and a photoelectric conversion device capable of suppressing deterioration in characteristics even when installed so as to form an angle of 20 ° or more with respect to the horizontal. It aims at providing the manufacturing method of.
  • the photoelectric conversion module includes a photoelectric conversion module in which two or more of the photoelectric conversion elements are electrically connected.
  • the photoelectric conversion element includes: a substrate; a first conductive layer on the substrate; A photoelectric conversion layer on one conductive layer; a second conductive layer on the photoelectric conversion layer; and a charge transport layer on the first conductive layer, wherein the photoelectric conversion layer includes a porous semiconductor layer and a porous semiconductor layer.
  • the charge transport layer contains an electrolyte, the photoelectric conversion module makes an angle of 20 ° or more with respect to the horizontal, and the positive side of the photoelectric conversion module is perpendicular to the negative side It is possible to provide a photoelectric conversion device that is installed so as to be higher.
  • a conversion layer, a second conductive layer on the photoelectric conversion layer, and a charge transport layer on the first conductive layer, the photoelectric conversion layer comprising a porous semiconductor layer and a photosensitization adsorbed on the porous semiconductor layer And a charge transport layer can provide a method for manufacturing a photoelectric conversion device including an electrolytic solution.
  • the photoelectric conversion device and a method for manufacturing the photoelectric conversion device that can suppress deterioration in characteristics even when installed so as to form an angle of 20 ° or more with respect to the horizontal. it can.
  • FIG. 1 is a schematic perspective view of a photoelectric conversion device according to Embodiment 1.
  • FIG. It is typical sectional drawing of an example of the photoelectric conversion module used for the photoelectric conversion apparatus of Embodiment 1.
  • FIG. It is a typical side view of an example of the form in which the photoelectric conversion module is installed in the photoelectric conversion apparatus of Embodiment 1.
  • 6 is a schematic cross-sectional view of a photoelectric conversion module according to Embodiment 2.
  • FIG. 6 is a schematic enlarged cross-sectional view of a photoelectric conversion module according to Embodiment 3.
  • FIG. 6 is a schematic enlarged cross-sectional view of a photoelectric conversion module according to Embodiment 4.
  • FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion module according to Embodiments 1 to 4.
  • FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion module according to Embodiments 1 to 4.
  • FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion module according to Embodiments 1 to 4.
  • FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion module according to Embodiments 1 to 4.
  • FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion module according to Embodiments 1 to 4.
  • FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion module according to Embodiments 1 to 4.
  • FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion module according to Embodiments 1 to 4.
  • FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion module according to Embodiments 1 to 4.
  • FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion module according to Embodiments 1 to 4.
  • FIG. 1 the typical perspective view of the photoelectric conversion apparatus of Embodiment 1 is shown.
  • the photoelectric conversion apparatus of Embodiment 1 includes a photoelectric conversion module 1, and the photoelectric conversion module 1 includes two or more photoelectric conversion elements 2 that are electrically connected.
  • the photoelectric conversion module 1 has the four photoelectric conversion elements 2 electrically connected in series, but the number of the photoelectric conversion elements 2 is two or more. There is no particular limitation as long as it is present.
  • the photoelectric conversion module 1 is installed on the installation surface 3, it is not limited to the structure shown in FIG.
  • FIG. 2 shows a schematic cross-sectional view of an example of the photoelectric conversion module 1 used in the photoelectric conversion apparatus according to the first embodiment. Note that FIG. 2 corresponds to an example of a cross section taken along II-II of the photoelectric conversion device of Embodiment 1 of FIG.
  • the four photoelectric conversion elements 2 constituting the photoelectric conversion module 1 of Embodiment 1 shown in FIG. 2 are respectively a substrate 11, a first conductive layer 12 on the substrate 11, and a photoelectric on the first conductive layer 12.
  • current collecting electrodes 21 a and 21 b that are electrically connected to the first conductive layer 12 and collect current are provided at both ends in the connecting direction of the photoelectric conversion element 2 of the photoelectric conversion module 1.
  • each photoelectric conversion element 2 since the first conductive layer 12 is a negative electrode and the second conductive layer 17 is a positive electrode, the current collection electrode 21a side of the photoelectric conversion module 1 is a positive electrode side, and the current collection electrode 21b side is a negative electrode. Become the side.
  • the photoelectric conversion layer 14 of the photoelectric conversion element 2 includes a porous semiconductor layer and a photosensitizer adsorbed on the porous semiconductor layer. Further, the charge transport layer 20 contains an electrolytic solution, and the electrolytic solution contained in the charge transport layer 20 is photoelectrically converted through holes provided in the porous insulating layer 15, the catalyst layer 16, and the second conductive layer 17. The layer 14 penetrates into the porous semiconductor layer.
  • Each photoelectric conversion element 2 is surrounded by the support 18 and the sealing portion 19. Adjacent photoelectric conversion elements 2 are connected in series by conduction through the first conductive layer 12, the photoelectric conversion layer 14, the porous insulating layer 15, the catalyst layer 16, and the second conductive layer 17. Further, the conduction of the adjacent photoelectric conversion elements 2 by the first conductive layer 12 is hindered by the porous insulating layer 15 provided so as to fill the separation groove 13 separating the first conductive layer 12.
  • substrate 11 will not be specifically limited if it is a material which can generally be used for a solar cell and can exhibit the effect of the embodiment of this invention.
  • examples of such materials include glass substrates such as soda glass, fused silica glass, and crystal quartz glass, or heat-resistant resin plates such as flexible films.
  • film examples of the material constituting the flexible film (hereinafter also referred to as “film”) used for the substrate 11 include tetraacetyl cellulose (TAC), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polycarbonate ( PC), polyarylate (PA), polyetherimide (PEI), phenoxy resin, and those containing at least one selected from the group consisting of Teflon (registered trademark).
  • TAC tetraacetyl cellulose
  • PET polyethylene terephthalate
  • PPS polyphenylene sulfide
  • PC polycarbonate
  • PA polyarylate
  • PEI polyetherimide
  • phenoxy resin examples of the material constituting the flexible film (hereinafter also referred to as “film”) used for the substrate 11 include tetraacetyl cellulose (TAC), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polycarbonate ( PC), polyarylate (PA
  • the substrate 11 When another member is formed on the substrate 11 with heating, for example, when the photoelectric conversion layer 14 including a porous semiconductor is formed on the substrate 11 with heating at about 250 ° C., the substrate 11 has 250 It is particularly preferable to use Teflon (registered trademark) having heat resistance of at least ° C.
  • the substrate 11 side is the light receiving surface side
  • at least the light transmissive property is necessary for the portion that becomes the light receiving surface of the substrate 11, so at least the light transmissive material is used for the portion that becomes the light receiving surface of the substrate 11. It is necessary to use it.
  • any material may be used as long as it is a material that substantially transmits light having a wavelength that has an effective sensitivity to at least a dye described later, and is not necessarily transparent to light in all wavelength regions.
  • substrate 11 is 0.2 mm or more and 5 mm or less.
  • the substrate 11 can be used as a base when the photoelectric conversion device of Embodiment 1 is attached to another structure. That is, the peripheral portion of the substrate 11 such as a glass substrate can be easily attached to another structure using, for example, a metal workpiece and a screw.
  • the material constituting the first conductive layer 12 is not particularly limited as long as it is a material that can generally be used for a solar cell and can exhibit the effects of the embodiment of the present invention.
  • Examples of such materials include indium tin composite oxide (ITO), tin oxide (SnO 2 ), tin oxide doped with fluorine (FTO), zinc oxide (ZnO), and titanium oxide doped with tantalum or niobium. And those containing at least one selected from the group consisting of:
  • the material constituting the first conductive layer 12 may be any material that can substantially transmit light having a wavelength having effective sensitivity to at least a dye described later. It is not always necessary to have transparency to light in all wavelength regions.
  • the first conductive layer 12 can be formed on the substrate 11 by a known method such as a sputtering method or a spray method.
  • the thickness of the first conductive layer 12 is preferably 0.02 ⁇ m or more and 5 ⁇ m or less. Further, the surface resistivity of the first conductive layer 12 is preferably as low as possible, and more preferably 40 ⁇ / sq or less.
  • a translucent conductive substrate obtained by laminating FTO as the first conductive layer 12 on soda lime float glass as the substrate 11, and a commercially available translucent conductive substrate may be used.
  • the photoelectric conversion layer 14 includes a porous semiconductor layer and a photosensitizer adsorbed on the porous semiconductor layer, and the electrolyte contained in the charge transport layer 20 can move inside and outside the photoelectric conversion layer 14. Below, the porous semiconductor layer and photosensitizer which are contained in the photoelectric converting layer 14 are each demonstrated.
  • the kind of semiconductor composing the porous semiconductor layer is not particularly limited as long as it includes a porous semiconductor generally used for a photoelectric conversion material in the solar cell field.
  • the porous semiconductor layer include titanium oxide, zinc oxide, tin oxide, iron oxide, niobium oxide, cerium oxide, tungsten oxide, barium titanate, strontium titanate, cadmium sulfide, lead sulfide, zinc sulfide, and indium phosphide.
  • a semiconductor compound containing at least one selected from the group consisting of copper-indium sulfide (CuInS 2 ), CuAlO 2 and SrCu 2 O 2 can be used.
  • a porous semiconductor layer it is especially preferable to use the thing containing a titanium oxide from a viewpoint of improving stability and safety
  • titanium oxide suitably used for the porous semiconductor layer examples include anatase type titanium oxide, rutile type titanium oxide, amorphous titanium oxide, compound containing metatitanic acid, compound containing orthotitanic acid, titanium hydroxide and hydrous hydroxide What contains at least 1 sort (s) selected from the group which consists of titanium can be used.
  • Two types of crystalline titanium oxide, anatase-type titanium oxide and rutile-type titanium oxide can be in any form depending on the production method and thermal history, but anatase-type titanium oxide is generally used.
  • the form of the porous semiconductor layer is not particularly limited, and may be, for example, single crystal or polycrystalline. However, it is polycrystalline from the viewpoints of stability, ease of crystal growth, and manufacturing cost. It is particularly preferable that it is in the form of polycrystalline semiconductor fine particles (nano to micro scale). Therefore, for example, as the material of the porous semiconductor layer, for example, it is particularly preferable to use fine particles of titanium oxide, for example.
  • the fine particles of titanium oxide can be produced by a known method such as a gas phase method or a liquid phase method (hydrothermal synthesis method, sulfuric acid method).
  • the fine particles of titanium oxide can also be obtained, for example, by high-temperature hydrolysis of a chloride developed by Degussa.
  • semiconductor fine particles for example, a mixture of fine particles having two or more particle sizes made of the same or different semiconductor compounds may be used. It is considered that semiconductor fine particles having a large particle size scatter incident light and contribute to an improvement in the light capture rate, and semiconductor fine particles having a small particle size contribute to an improvement in the amount of dye adsorbed by increasing the number of adsorption points.
  • the ratio of the average particle size of different particle sizes of the semiconductor fine particles is preferably 10 times or more, and the average particle size of the semiconductor fine particles having a large particle size is preferably, for example, from 100 nm to 500 nm.
  • the average particle size of the small semiconductor fine particles is preferably, for example, 5 nm or more and 50 nm or less.
  • the thickness of the porous semiconductor layer is not particularly limited, and is preferably 0.1 ⁇ m or more and 100 ⁇ m or less, for example.
  • the porous semiconductor layer preferably has a large surface area, and the surface area of the porous semiconductor layer is preferably 10 m 2 / g or more and 200 m 2 / g or less.
  • the thickness of the porous semiconductor layer, that is, the thickness of the photoelectric conversion layer 14 is preferably the same as the thickness of the porous insulating layer 15 filling the separation groove 13.
  • the method for forming the porous semiconductor layer is not particularly limited, and for example, a known method can be used. For example, there is a method in which at least one of drying and baking is performed after a suspension containing the above-described semiconductor fine particles is applied on the first conductive layer 12.
  • the semiconductor fine particles are suspended in an appropriate solvent to obtain a suspension.
  • a solvent include glyme solvents such as ethylene glycol monomethyl ether, alcohols such as isopropyl alcohol, alcohol-based mixed solvents such as isopropyl alcohol / toluene, and water.
  • glyme solvents such as ethylene glycol monomethyl ether
  • alcohols such as isopropyl alcohol
  • alcohol-based mixed solvents such as isopropyl alcohol / toluene
  • water water.
  • a commercially available titanium oxide paste for example, Solaronix, Ti-nanoxide, T, D, T / SP, D / SP
  • Ti-nanoxide for example, Solaronix, Ti-nanoxide, T, D, T / SP, D / SP
  • the obtained suspension is applied onto the first conductive layer 12, and at least one of drying and baking is performed to form a porous semiconductor layer on the first conductive layer 12.
  • a known method such as a doctor blade method, a squeegee method, a spin coating method, or a screen printing method can be used.
  • the temperature, time, atmosphere, etc. which are required for drying and baking of the suspension apply
  • Such a suspension can be dried and calcined, for example, once at a single temperature or twice or more at different temperatures.
  • the porous semiconductor layer may be a plurality of layers.
  • a step of performing at least one of drying and baking is repeated two or more times.
  • a porous semiconductor layer which is a layer can be formed.
  • the porous semiconductor layer for the purpose of improving the performance, post-processing such as improving the electrical connection between the semiconductor fine particles, increasing the surface area of the porous semiconductor layer, and reducing the defect level on the semiconductor fine particles. You may do it.
  • the porous semiconductor layer is made of a titanium oxide film
  • the performance of the porous semiconductor layer can be improved by treating with a titanium tetrachloride aqueous solution.
  • the photosensitizer adsorbed on the porous semiconductor layer is not particularly limited.
  • one or more of various organic dyes or metal complex dyes having an absorption region in the visible light region or the infrared light region are used. be able to.
  • organic dyes examples include azo dyes, quinone dyes, quinone imine dyes, quinacridone dyes, squarylium dyes, cyanine dyes, merocyanine dyes, triphenylmethane dyes, xanthene dyes, porphyrin dyes, and perylenes.
  • a dye containing at least one selected from the group consisting of a dye, an indigo dye and a naphthalocyanine dye can be used.
  • the extinction coefficient of an organic dye is generally larger than that of a metal complex dye that takes a form in which molecules are coordinated to a transition metal.
  • the metal complex dye for example, a compound in which a metal is coordinated to a molecule can be used.
  • a molecule containing at least one selected from the group consisting of a porphyrin dye, a phthalocyanine dye, a naphthalocyanine dye, and a ruthenium dye can be used.
  • metals include Cu (copper), Ni (nickel), Fe (iron), Co (cobalt), V (vanadium), Sn (tin), Si (silicon), Ti (titanium), and Ge (germanium).
  • ruthenium-based metal complex dyes represented by the following formulas (I) to (III).
  • examples of commercially available ruthenium-based metal complex dyes include trade name Ruthenium 535 dye, Ruthenium 535-bisTBA dye, Ruthenium 620-1H3TBA dye manufactured by Solaronix.
  • an interlock such as carboxyl group, alkoxy group, hydroxyl group, sulfonic acid group, ester group, mercapto group, and phosphonyl group is contained in the dye molecule. Those having a group are preferred.
  • the interlock group is generally present when the dye is fixed to the porous semiconductor layer, and provides an electrical bond that facilitates the movement of electrons between the excited dye and the semiconductor conduction band. To do.
  • Examples of the method for adsorbing the dye to the porous semiconductor layer include a method of immersing the porous semiconductor layer in a solution in which the dye is dissolved (dye adsorption solution). At this time, the dye adsorbing solution may be heated in order to penetrate the dye adsorbing solution to the back of the fine pores in the porous semiconductor layer.
  • the solvent for dissolving the dye is not particularly limited as long as it dissolves the dye, and for example, at least one selected from the group consisting of alcohol, toluene, acetonitrile, tetrahydrofuran (THF), chloroform and dimethylformamide. Can be used.
  • the solvent for dissolving the coloring matter it is preferable to use a purified one, and it is preferable to use a mixture of two or more types.
  • the dye concentration in the dye adsorption solution can be appropriately set according to conditions such as the dye to be used, the type of solvent, the dye adsorption process, etc., but in order to improve the adsorption function, the concentration is high. Preferably, it is 1 ⁇ 10 ⁇ 5 mol / liter or more. In preparing the dye adsorption solution, heating may be performed to improve the solubility of the dye.
  • porous insulation layer As a material constituting the porous insulating layer 15, for example, a material containing at least one selected from the group consisting of niobium oxide, zirconium oxide, silicon oxide, aluminum oxide, and barium titanate can be used.
  • silicon oxide for example, a material containing at least one of silica glass and soda glass can be used.
  • titanium oxide can be used, for example, It is preferable to use a rutile type titanium oxide especially.
  • the titanium oxide and the rutile type titanium oxide are preferably in the form of particles, and the average particle size of the particulate titanium oxide and the particulate rutile type titanium oxide is preferably 5 nm or more and 500 nm or less, and preferably 10 nm or more. More preferably, it is 300 nm or less.
  • porous insulating layer 15 As a formation method of the porous insulating layer 15, for example, the same formation method as the photoelectric conversion layer 14 can be used. That is, first, a fine particle insulator is dispersed in a suitable solvent, and a polymer compound such as ethyl cellulose or polyethylene glycol (PEG) is further mixed to obtain a paste. Next, after applying the paste obtained as described above onto the porous semiconductor layer 14, at least one of drying and baking is performed. Thereby, the porous insulating layer 15 can be easily formed on the porous semiconductor layer 14.
  • a fine particle insulator is dispersed in a suitable solvent, and a polymer compound such as ethyl cellulose or polyethylene glycol (PEG) is further mixed to obtain a paste.
  • PEG polyethylene glycol
  • the catalyst layer 16 can be used without particular limitation as long as it is a material that can transfer electrons on the surface of the catalyst layer 16.
  • the catalyst layer 16 can be selected from the group consisting of platinum, palladium, carbon black, ketjen black, carbon nanotubes, and fullerenes. A material containing at least one selected can be used.
  • the material composing the second conductive layer 17 is not particularly limited as long as it is a material that can generally be used for a solar cell and can exhibit the effects of the embodiment of the present invention.
  • a material for example, a material containing at least one selected from the group consisting of ITO, SnO 2 , FTO, and ZnO can be used.
  • the material which comprises the 2nd conductive layer 17 may contain the metal which does not show corrosivity with respect to the electrolyte solution contained in the electric charge transport layer 20, such as titanium, nickel, or tantalum.
  • the second conductive layer 17 containing a metal that is not corrosive to the electrolyte contained in the charge transport layer 20 can be formed by a known method such as a sputtering method or a spray method.
  • the material constituting the second conductive layer 17 must be a material that can substantially transmit light having a wavelength that has at least effective sensitivity to the dye. It is not always necessary to have transparency to light in all wavelength regions.
  • the second conductive layer 17 can be formed on the catalyst layer 16 by a known method such as a sputtering method or a spray method.
  • the thickness of the second conductive layer 17 is preferably 0.02 ⁇ m or more and 5 ⁇ m or less.
  • the surface resistivity of the second conductive layer 17 is preferably as low as possible, and more preferably 40 ⁇ / sq or less.
  • the second conductive layer 17 includes a flow path for the electrolyte solution contained in the charge transport layer 20. It is preferable to form a plurality of holes.
  • the hole of the second conductive layer 17 can be formed by, for example, physical contact with the second conductive layer 17 or laser processing.
  • the size of the hole in the second conductive layer 17 is preferably 0.1 ⁇ m or more and 100 ⁇ m or less, and more preferably 1 ⁇ m or more and 50 ⁇ m or less.
  • the interval between the holes of the second conductive layer 17 is preferably 1 ⁇ m or more and 200 ⁇ m or less, and more preferably 10 ⁇ m or more and 300 ⁇ m or less. Further, the same effect can be obtained by forming a stripe-shaped opening in the first conductive layer 12.
  • the interval between the stripe-shaped openings formed in the first conductive layer 12 is preferably 1 ⁇ m or more and 200 ⁇ m or less, and more preferably 10 ⁇ m or more and 300 ⁇ m or less.
  • the charge transport layer 20 one containing an electrolytic solution is used.
  • the electrolyte contained in the charge transport layer 20 is a region surrounded by the substrate 11 (or a laminate of the substrate 11 and the first conductive layer 12), the support 18, and the sealing portion 19.
  • the inside of the holes of the photoelectric conversion layer 14 and the porous insulating layer 15 including the porous semiconductor layer, the inside of the second conductive layer 17 and the inside of the holes of the second conductive layer 17 are filled.
  • the electrolyte solution contained in the charge transport layer 20 may be a liquid material containing a redox species, and is not particularly limited as long as it can be generally used in a battery or a solar cell.
  • Examples of the electrolytic solution contained in the charge transport layer 20 include a redox species and a solvent capable of dissolving the redox species, a redox species and a molten salt capable of dissolving the redox species, and a redox species and the same. What consists of a soluble solvent and molten salt can be used.
  • I ⁇ / I 3 ⁇ series, Br 2 ⁇ / Br 3 ⁇ series, Fe 2 + / Fe 3+ series, quinone / hydroquinone series and the like can be used.
  • metal iodides such as lithium (LiI), sodium iodide (NaI), potassium iodide (KI), calcium iodide (CaI 2 ) and iodine (I 2 ), tetraethylammonium iodide (TEAI), tetra Combinations of tetraalkylammonium salts such as propylammonium iodide (TPAI), tetrabutylammonium iodide (TBAI), tetrahexylammonium iodide (THAI) and iodine, or lithium bromide (LiBr), sodium bromide (NaBr) ), potassium bromide (KBr), calcium bromide
  • redox species solvent for example, carbonate compounds such as propylene carbonate, nitrile compounds such as acetonitrile, alcohols such as ethanol, water, aprotic polar substances, and the like can be used. Among these, it is particularly preferable to use a carbonate compound or a nitrile compound as the solvent for the redox species. Two or more of these solvents can be used in combination.
  • Additives may be added to the electrolyte contained in the charge transport layer 20 as necessary.
  • the additive include nitrogen-containing aromatic compounds such as t-butylpyridine (TBP), dimethylpropylimidazole iodide (DMPII), methylpropylimidazole iodide (MPII), ethylmethylimidazole iodide (EMII), ethyl At least one imidazole salt selected from the group consisting of imidazole iodide (EII) and hexylmethylimidazole iodide (HMII) can be used.
  • TBP t-butylpyridine
  • DMPII dimethylpropylimidazole iodide
  • MPII methylpropylimidazole iodide
  • EMII ethylmethylimidazole iodide
  • EII imidazole iodide
  • HMII he
  • the electrolyte concentration of the electrolytic solution is preferably 0.001 mol / liter or more and 1.5 mol / liter or less, and more preferably 0.01 mol / liter or more and 0.7 mol / liter or less.
  • incident light reaches the photoelectric conversion layer 14 through the electrolytic solution in the charge transport layer 20 and the carriers are excited. Therefore, since the performance of the photoelectric conversion element 2 may be deteriorated depending on the electrolyte concentration of the electrolytic solution, it is preferable to set the electrolyte concentration of the electrolytic solution in consideration of this point.
  • a material that can hold the charge transport layer 20 or the like and can prevent entry of water or the like from the outside into the charge transport layer 20 can be suitably used.
  • the same material as that of the substrate 11 can be used, and tempered glass or the like can be suitably used in consideration of outdoor installation of the photoelectric conversion device of Embodiment 1.
  • the support 18 (including these members when a catalyst layer and / or a conductive layer is formed on the surface of the support 18) may not come into contact with the laminate formed on the substrate 11. preferable. Thereby, the charge transport layer 20 can be formed, and the charge transport layer 20 containing a sufficient amount of the electrolytic solution can be held inside the photoelectric conversion element 2.
  • an electrolyte solution injection port of the charge transport layer 20 is formed in a part of the support 18 and the electrolyte is injected by, for example, a vacuum injection method or a vacuum impregnation method, the support 18 and the substrate 11 are formed. Since the formed laminate is not in contact, the injection rate of the electrolyte solution in the charge transport layer 20 can be increased. Therefore, the manufacturing tact of the photoelectric conversion element 2 and the photoelectric conversion module 1 can be improved.
  • the support 18 side is the light receiving surface side
  • at least the light transmissive property is necessary for the portion that becomes the light receiving surface of the support 18. It is necessary to use this material.
  • any material may be used as long as it is a material that substantially transmits light having a wavelength that has an effective sensitivity to at least a dye described later, and is not necessarily transparent to light in all wavelength regions.
  • a material that can hold the charge transport layer 20 and the like and can prevent entry of water or the like from the outside into the charge transport layer 20 can be suitably used.
  • a silicone resin It is preferable to use an epoxy resin, a polyisobutylene resin, a hot melt resin, and a glass material.
  • the collector electrodes 21a and 21b can be used without particular limitation as long as they are made of a conductive material that can collect the current generated in the photoelectric conversion module 1 and take it out to the outside.
  • the photoelectric conversion module 1 makes an angle of 20 ° or more with respect to the horizontal, and the positive side of the photoelectric conversion module 1 is higher in the vertical direction than the negative side. Installed.
  • FIG. 3 shows a schematic side view of an example of a form in which the photoelectric conversion module 1 is installed in the photoelectric conversion apparatus of the first embodiment.
  • the photoelectric conversion module 1 is installed at an angle of 20 ° or more with respect to a virtual horizontal line 32 parallel to the horizontal direction, and the positive electrode side of the photoelectric conversion module 1 is the negative electrode side. It is installed to be higher in the vertical direction.
  • the light source 31 is, for example, an outdoor sun or the like, and is installed at a position higher in the vertical direction than the photoelectric conversion module 1.
  • FIG. 4 shows a schematic side view of another example in which the photoelectric conversion module 1 is installed in the photoelectric conversion apparatus of the first embodiment.
  • the photoelectric conversion module 1 is installed at an angle of 20 ° or more with respect to a virtual horizontal line 32 parallel to the horizontal direction, and the positive electrode side of the photoelectric conversion module 1 is a negative electrode. It is installed so as to be higher in the vertical direction than the side.
  • the light source 31 is indoor lighting, for example, and the photoelectric conversion module 1 is installed in an umbrella of the lighting. In this case, the light source 31 can be installed at a position lower than the photoelectric conversion module 1 in the vertical direction, for example, as shown in FIG.
  • the present inventor has installed solar cell modules in which dye-sensitized solar cells are electrically connected in series so as to form an angle of 20 ° or more with respect to the horizontal, and produces solar power generation devices.
  • the cause of the deterioration of the characteristics of the power generation device was intensively studied.
  • the present inventor found that the heavy component in the electrolyte in the dye-sensitized solar cell is biased downward in the vertical direction due to the influence of gravity, and the charge transport by the electrolyte is performed inside the dye-sensitized solar cell. It was found that the characteristics of the photovoltaic power generation device deteriorated because it could not be performed sufficiently.
  • the positive electrode side of the photoelectric conversion module 1 is installed so as to be higher in the vertical direction than the negative electrode side, thereby forming an angle of 20 ° or more with respect to the horizontal. Even when the photoelectric conversion module 1 is installed, it has been found that the deterioration of the characteristics of the photoelectric conversion device can be suppressed, and the present invention has been completed. This is considered to be due to the following reasons. That is, by installing the photoelectric conversion module 1 so that the positive electrode side is higher in the vertical direction than the negative electrode side, each photoelectric conversion element 2 is not in contact with the catalyst layer 16 that is positively charged by the effect of the electric field. The portion of the two conductive layers 17 is positioned above the vertical direction.
  • a negatively charged electrolyte component for example, iodide ion
  • iodide ion a negatively charged electrolyte component that is biased downward in the vertical direction due to the influence of gravity
  • the second conductive layer 17 and the charge transport layer 20 are in contact with each other.
  • the negatively charged electrolyte component for example, iodide ions
  • the negatively charged electrolyte component biased downward in the vertical direction due to the influence of gravity can be drawn upward in the vertical direction.
  • the unevenness of the electrolyte component due to can be reduced.
  • the charge transport layer 20 has an electrolyte solution in a region other than between the first conductive layer 12 and the second conductive layer 17. It is preferable to have a portion present. In this case, the bias of the electrolyte component due to the influence of gravity is further reduced by the portion where the electrolyte solution exists in a region other than between the first conductive layer 12 and the second conductive layer 17 in the charge transport layer 20. Can do.
  • FIG. 5 shows a schematic cross-sectional view of another example of the photoelectric conversion module (photoelectric conversion module of Embodiment 2) used in the photoelectric conversion device of the embodiment.
  • the substrate 11 and the support 18 facing the substrate 11 are provided on the insulating layer 22 provided on the first conductive layer 12 and the support 18. It is characterized in that it is fixed by joining with the sealing portion 19.
  • the photoelectric conversion module 1 of Embodiment 2 has such a configuration, charge transport other than between the first conductive layer 12 and the second conductive layer 17 is achieved by adjusting the thickness of the insulating layer 22.
  • the amount of electrolyte in the region of the layer 20 can be easily adjusted. Therefore, the amount of the electrolytic solution in the electrolytic solution section can be flexibly adjusted to a suitable amount according to the angle of inclination of the photoelectric conversion module 1 with respect to the horizontal.
  • a material having a dense structure that does not penetrate the electrolytic solution can be used.
  • a glass-based material can be used.
  • a glass-type material what is marketed as a glass paste or glass frit can be used, for example.
  • a lead-free material for the insulating layer 22.
  • the firing temperature is 550 ° C. or less. By baking, the insulating layer 22 can be formed.
  • FIG. 6 shows a schematic enlarged cross-sectional view of another example of the photoelectric conversion module (photoelectric conversion module of Embodiment 3) used in the photoelectric conversion device of the embodiment.
  • the charge transport layer 20 includes a first electrolyte solution portion 20a on the positive electrode side and a second electrolyte solution portion 20b on the negative electrode side, and the first electrolyte solution
  • the part 20a is characterized in that it has a part having a thickness t1 that is thicker than the thickness t2 of the second electrolyte part 20b.
  • the thickness of the region of the charge transport layer 20 other than between the first conductive layer 12 and the second conductive layer 17 is set to the negative electrode side.
  • the positive electrode side can be made thicker.
  • FIG. 7 is a schematic enlarged cross-sectional view of another example of the photoelectric conversion module (photoelectric conversion module of Embodiment 4) used in the photoelectric conversion device of the embodiment.
  • the photoelectric conversion module 1 of Embodiment 4 shown in FIG. 7 is characterized in that the configuration of the photoelectric conversion module of Embodiment 2 and the configuration of the photoelectric conversion module of Embodiment 3 are combined.
  • the charge transport layer 20 is the first electrode on the positive electrode side where the electrolyte exists in a region other than between the first conductive layer 12 and the second conductive layer 17. It includes an electrolytic solution portion 20a and a second electrolytic solution portion 20b on the negative electrode side, and the first electrolytic solution portion 20a has a portion having a thickness t1 that is thicker than the thickness t2 of the second electrolytic solution portion 20b. .
  • the photoelectric conversion module 1 of Embodiment 4 combines the configuration of the photoelectric conversion module 1 of Embodiment 2 and the configuration of the photoelectric conversion module 1 of Embodiment 3, the effects of the photoelectric conversion module 1 of Embodiment 2 can be obtained. A synergistic effect with the effect of the photoelectric conversion module 1 of Embodiment 3 is obtained.
  • the first conductive layer 12 is formed on the entire surface of the substrate 11 by, for example, a sputtering method, and then the first conductive layer 12 is cut by, for example, a laser scribing method to form a separation groove 13. To do.
  • a porous semiconductor layer 14a is formed on the first conductive layer 12, and subsequently, a porous insulating layer 15 is formed on the porous semiconductor layer 14a as shown in FIG. To do.
  • each of the porous semiconductor layer 14a and the porous insulating layer 15 can be formed by the method described in the first embodiment, for example.
  • the porous insulating layer 15 is formed so that one end thereof fills the separation groove 13.
  • the catalyst layer 16 is formed on the porous insulating layer 15, and then the photoelectric conversion layer 14 is formed by adsorbing the photosensitizer to the porous semiconductor layer 14a.
  • the catalyst layer 16 can be formed, for example, by vapor deposition.
  • the photosensitizer can be adsorbed on the porous semiconductor layer 14a by the method described in the first embodiment, for example.
  • a second conductive layer 17 is formed on the catalyst layer 16.
  • the second conductive layer 17 can be formed, for example, by vapor deposition.
  • the substrate 11 and the support 18 are fixed by a sealing portion 19.
  • substrate 11 and the support body 18 by the sealing part 19 uses a heat sealing
  • the sealing portion 19 is melted by heating while pressurizing between the substrate 11 and the support 18, and then the sealing portion 19 is cooled and solidified. it can.
  • the region other than between the first conductive layer 11 and the second conductive layer 17 on the positive electrode side of the photoelectric conversion module 1 is the negative electrode of the photoelectric conversion module 1.
  • the substrate 11 and the support 18 are fixed so as to be wider than the region other than between the first conductive layer 11 and the second conductive layer 17 on the side.
  • laser scribing or the like is performed on the negative electrode side ends of the second conductive layer 17, the catalyst layer 16, the porous insulating layer 15, and the photoelectric conversion layer 14 constituting the photoelectric conversion element 2.
  • the sealing portion 19 (Embodiment 3) or the sealing portion 19 and the insulating layer 22 (Embodiment 4) are formed on the end face exposed after the removal, whereby the photoelectric conversion modules of Embodiments 3 and 4 are formed. 1 can be produced.
  • FIG. 14 for example, by injecting an electrolytic solution into the space surrounded by the substrate 11, the sealing portion 19, and the support 18 through an opening provided in the support 18 in advance.
  • the charge transport layer 20 is formed in the space.
  • current collecting electrodes 21a and 21b are formed at the positive electrode side end and the negative electrode side end of the first conductive layer 12 of the photoelectric conversion module 1, respectively.
  • the photoelectric conversion modules 1 of Embodiments 1 to 4 are manufactured.
  • the photoelectric conversion modules 1 of Embodiments 1 to 4 prepared as described above are set at an angle of 20 ° or more with respect to the horizontal as shown in FIGS. 3 and 4, for example.
  • the photoelectric conversion device of the embodiment as shown in FIG. 1 is manufactured.
  • a translucent first conductive layer 12 made of an FTO film is formed on a translucent substrate 11 made of glass, and the width 15 mm ⁇ length 40 mm ⁇ thickness 1.
  • a 0 mm transparent electrode substrate manufactured by Nippon Sheet Glass Co., Ltd., glass with SnO 2 film
  • the first conductive layer 12 of the transparent electrode substrate was cut by a laser scribe method to form a scribe line as the separation groove 13.
  • a commercially available titanium oxide paste (manufactured by Solaronix, product) Name: D / SP) was applied onto the first conductive layer 12 and leveled at room temperature for 1 hour. Then, the titanium oxide paste applied on the first conductive layer 12 was dried in an oven set at 80 ° C. for 20 minutes, and then a baking furnace set at 500 ° C. (manufactured by Denken Co., Ltd., model number: KDF P-100) Was baked in air for 60 minutes. By repeating this titanium oxide paste coating step and firing step four times, a porous semiconductor layer 14a having a thickness of 25 ⁇ m was formed on the first conductive layer 12, as shown in FIG.
  • a paste containing zirconia particles (average particle size of 50 nm) is applied onto the porous semiconductor layer 14a using a screen plate having a pattern of width 7 mm ⁇ length 38 mm and a screen printing machine, and then 500 ° C. As shown in FIG. 10, the porous insulating layer 15 having a flat portion thickness of 13 ⁇ m was formed.
  • a catalyst layer 16 made of Pt was formed on the porous insulating layer 15 by vapor deposition so that the position and size of the porous semiconductor layer 14a were the same.
  • a second conductive layer 17 having a width of 9 mm ⁇ length of 36 mm was formed on the catalyst layer 16 by vapor deposition.
  • the laminate in which the above-described second conductive layer 17 is formed on the transparent electrode substrate is immersed in a dye adsorption solution prepared in advance at room temperature for 100 hours, and then the laminate is washed with ethanol. And then dried at about 60 ° C. for about 5 minutes. Thereby, the pigment
  • the dye solution for adsorption is a mixture of acetonitrile and t-butanol at a volume ratio of 1: 1 so that the dye of the formula (II) (manufactured by Solaronix, trade name: Ruthenium 620 1H3TBA) has a concentration of 4 ⁇ 10 ⁇ 4 mol / liter. And dissolved in a mixed solvent.
  • a glass substrate having a width of 11 mm ⁇ length of 40 mm is prepared as the support 18, and the transparent electrode substrate on which the above laminate is formed and the support 18 are porous. Bonding using a sealing part 19 made of a heat-sealing film (DuPont Himiran 1702) in which an opening having the same shape as the insulating material layer 15 is formed, and heating in an oven set at about 100 ° C. for 10 minutes Thus, the transparent electrode substrate and the support 18 were pressure-bonded by the sealing portion 19. At this time, the distance between the first conductive layer 12 and the support 18 was set to 20 ⁇ m.
  • an electrolyte prepared in advance is injected from the electrolyte injection hole provided in advance in the support 18, and then electrolyzed using an ultraviolet curable resin (manufactured by ThreeBond, model number: 31X-101).
  • an ultraviolet curable resin manufactured by ThreeBond, model number: 31X-101.
  • the electrolytic solution is acetonitrile as a solvent, LiI (Aldrich) as a redox species at a concentration of 0.1 mol / liter, and I 2 (Kishida Chemical) at a concentration of 0.01 mol / liter.
  • LiI Aldrich
  • I 2 Kishida Chemical
  • t-butylpyridine manufactured by Aldrich
  • dimethylpropylimidazole iodide manufactured by Shikoku Kasei Kogyo Co., Ltd.
  • the product obtained by dissolution was used.
  • the dye-sensitized solar cell module of Example 1 obtained as described above is set at an angle of 90 ° with respect to the horizontal on the installation surface 3 which is the south-facing wall surface.
  • the positive electrode side of the dye-sensitized solar cell module of Example 1 was installed so as to be higher in the vertical direction than the negative electrode side. Thereby, the solar power generation device of Example 1 was completed.
  • Example 2 A dye-sensitized solar cell module of Example 2 was produced in the same manner as in Example 1 except that the distance between the first conductive layer 12 and the support 18 was 40 ⁇ m.
  • Example 2 Thereafter, in the same manner as in Example 1, the dye-sensitized solar cell module of Example 2 was formed at an angle of 90 ° with respect to the horizontal on the installation surface 3 which is the wall facing south, and the dye of Example 2 The sensitized solar cell module was installed so that the positive electrode side was higher in the vertical direction than the negative electrode side. Thereby, the solar power generation device of Example 2 was completed.
  • Example 2 the maximum output [mW / cm ⁇ 2 >] immediately after installation of the dye-sensitized solar cell module of Example 2, and the dye increase of Example 2
  • the maximum output [mW / cm 2 ] after one week from the installation of the solar cell module was measured, and the characteristic retention [%] was calculated from these measured values by the above formula (i). The results are shown in Table 1.
  • Example 3 As shown in FIG. 7, the dye-sensitized solar of Example 3 is the same as Example 1 except that the insulating layer 22 is formed on the surface of the first conductive layer 12 after the formation of the porous semiconductor layer 14a. A battery module was produced.
  • the insulating layer 22 was formed to have a width of 1 mm and a thickness of 35 ⁇ m by applying a bismuth-based glass paste on the first conductive layer 12 and then baking at a baking temperature of 550 ° C. or less.
  • the porous insulating layer 15 was formed using a screen plate having a pattern of width 6 mm ⁇ length 38 mm in the same manner as in Example 1.
  • a commercially available ultraviolet curable resin is applied on the insulating layer 22, a glass substrate as a support 18 is placed on the ultraviolet curable resin, and the sealing portion 19 is formed by irradiating the ultraviolet curable resin with ultraviolet rays. did. At this time, the distance between the first conductive layer 12 and the support 18 was 20 ⁇ m.
  • Example 3 Thereafter, in the same manner as in Example 1, the dye-sensitized solar cell module of Example 3 was formed at an angle of 90 ° with respect to the horizontal on the installation surface 3 that is the wall facing south, and the dye of Example 3 The sensitized solar cell module was installed so that the positive electrode side was higher in the vertical direction than the negative electrode side. Thereby, the solar power generation device of Example 3 was completed.
  • Example 3 the maximum output [mW / cm 2 ] immediately after installation of the dye-sensitized solar cell module of Example 3 and the dye increase of Example 3
  • the maximum output [mW / cm 2 ] after one week from the installation of the solar cell module was measured, and the characteristic retention [%] was calculated from these measured values by the above formula (i). The results are shown in Table 1.
  • the photovoltaic power generation devices of Examples 1 to 3 suppress the deterioration of characteristics even when installed so as to form an angle of 20 ° or more with respect to the horizontal, compared with the photovoltaic power generation device of Comparative Example 1. You can see that
  • the photoelectric conversion module includes a photoelectric conversion module in which two or more of the photoelectric conversion elements are electrically connected.
  • the photoelectric conversion element includes a substrate, a first conductive layer on the substrate, and a first A photoelectric conversion layer on the conductive layer, a second conductive layer on the photoelectric conversion layer, and a charge transport layer on the first conductive layer, the photoelectric conversion layer is adsorbed to the porous semiconductor layer and the porous semiconductor layer
  • the charge transport layer contains an electrolyte
  • the photoelectric conversion module makes an angle of 20 ° or more with respect to the horizontal
  • the positive side of the photoelectric conversion module is perpendicular to the negative side It is possible to provide a photoelectric conversion device that is installed so as to be higher.
  • the photoelectric conversion module is installed so that the positive electrode side of the photoelectric conversion module is higher in the vertical direction than the negative electrode side, so that the photoelectric conversion module forms an angle of 20 ° or more with respect to the horizontal. Even when the conversion module is installed, it is possible to suppress deterioration of the characteristics of the photoelectric conversion device.
  • the second conductive layer and the charge transport layer are in contact with each other.
  • an electrolyte component having a negative charge biased downward in the vertical direction due to the influence of gravity for example, iodide ions
  • the bias can be alleviated.
  • the charge transport layer preferably has a portion where the electrolytic solution exists in a region other than between the first conductive layer and the second conductive layer.
  • the bias of the electrolyte component due to the influence of gravity can be further alleviated by the portion where the electrolyte solution exists in a region other than between the first conductive layer and the second conductive layer in the charge transport layer.
  • the charge transport layer includes a first electrolytic solution portion and a second electrolytic solution portion where the electrolytic solution is present in a region other than between the first conductive layer and the second conductive layer.
  • the first electrolyte part is located on the positive electrode side of the photoelectric conversion module
  • the second electrolyte part is located on the negative electrode side of the photoelectric conversion module
  • the first electrolyte part is It is preferable to have a thicker part than the electrolyte part. In this case, since a large amount of the electrolytic solution can be present at a higher position in the vertical direction of the photoelectric conversion module, the deviation of the electrolytic solution component due to the influence of gravity can be further reduced.
  • the charge transport layer is surrounded by the substrate, the support facing the substrate, and the sealing portion on the support, and the substrate and the support are the first. It is preferably fixed by bonding between an insulating layer provided on the conductive layer and a sealing portion provided on the support.
  • the electrolytic conversion is performed according to the inclination angle with respect to the horizontal of the photoelectric conversion module.
  • the amount of the electrolytic solution in the liquid part can be flexibly adjusted to a suitable amount.
  • a step of installing the photoelectric conversion module so that the positive electrode side is higher in the vertical direction than the negative electrode side, and the photoelectric conversion element includes a substrate, a first conductive layer on the substrate, and a photoelectric conversion on the first conductive layer.
  • a photoelectric conversion layer including a porous semiconductor layer and a photosensitizer adsorbed on the porous semiconductor layer, the second conductive layer on the photoelectric conversion layer, and the charge transport layer on the first conductive layer.
  • the charge transport layer can provide a method for manufacturing a photoelectric conversion device including an electrolytic solution.
  • the photoelectric conversion module is installed so that the positive electrode side of the photoelectric conversion module is higher in the vertical direction than the negative electrode side, so that the photoelectric conversion module forms an angle of 20 ° or more with respect to the horizontal. Even when the conversion module is installed, it is possible to suppress deterioration of the characteristics of the photoelectric conversion device.
  • the present invention can be used for a photoelectric conversion device and a method for manufacturing the photoelectric conversion device, and in particular, for a photovoltaic power generation device using a dye-sensitized solar cell module and a method for manufacturing the same.
  • an inverter, a storage battery, etc. can be installed and used with a photoelectric conversion apparatus as needed.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
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Abstract

L'invention concerne un dispositif de conversion photoélectrique, dans lequel le côté électrode positive d'un module de conversion photoélectrique est disposé de manière à être plus élevé dans le sens vertical que le côté électrode négative, ainsi qu'un procédé de production du dispositif de conversion photoélectrique.
PCT/JP2014/074497 2013-10-02 2014-09-17 Dispositif de conversion photoélectrique et procédé de production de dispositif de conversion photoélectrique Ceased WO2015049983A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009129686A (ja) * 2007-11-22 2009-06-11 Kiso Micro Kk 太陽電池システム
JP2009302065A (ja) * 2004-06-01 2009-12-24 Konarka Technologies Inc 太陽電池モジュール
JP2011222190A (ja) * 2010-04-06 2011-11-04 Sharp Corp 湿式太陽電池および湿式太陽電池モジュール
WO2011155441A1 (fr) * 2010-06-09 2011-12-15 シャープ株式会社 Cellule solaire de type humide et module de cellules solaires de type humide
JP2012019185A (ja) * 2010-06-09 2012-01-26 Sony Corp 発電装置および発電方法
US20120298187A1 (en) * 2011-05-23 2012-11-29 Hyun-Chul Kim Photoelectric conversion module

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302065A (ja) * 2004-06-01 2009-12-24 Konarka Technologies Inc 太陽電池モジュール
JP2009129686A (ja) * 2007-11-22 2009-06-11 Kiso Micro Kk 太陽電池システム
JP2011222190A (ja) * 2010-04-06 2011-11-04 Sharp Corp 湿式太陽電池および湿式太陽電池モジュール
WO2011155441A1 (fr) * 2010-06-09 2011-12-15 シャープ株式会社 Cellule solaire de type humide et module de cellules solaires de type humide
JP2012019185A (ja) * 2010-06-09 2012-01-26 Sony Corp 発電装置および発電方法
US20120298187A1 (en) * 2011-05-23 2012-11-29 Hyun-Chul Kim Photoelectric conversion module

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