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WO2014205987A1 - Array substrate and manufacturing method therefor, and display device - Google Patents

Array substrate and manufacturing method therefor, and display device Download PDF

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Publication number
WO2014205987A1
WO2014205987A1 PCT/CN2013/087419 CN2013087419W WO2014205987A1 WO 2014205987 A1 WO2014205987 A1 WO 2014205987A1 CN 2013087419 W CN2013087419 W CN 2013087419W WO 2014205987 A1 WO2014205987 A1 WO 2014205987A1
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WO
WIPO (PCT)
Prior art keywords
tft
transparent electrode
microstructure
layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2013/087419
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French (fr)
Chinese (zh)
Inventor
阎长江
林雨
蒋晓伟
龙君
谢振宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing BOE Optoelectronics Technology Co Ltd
Original Assignee
Beijing BOE Optoelectronics Technology Co Ltd
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Publication of WO2014205987A1 publication Critical patent/WO2014205987A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an array substrate, a method for manufacturing the same, and a display device.
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • LCD Thin Film Transistor Liquid Crystal Display
  • the manufacturing process of the TFT-LCD display panel includes: manufacturing an array (Array) substrate and a color filter (Color Filter) substrate, and then aligning the array substrate and the color filter substrate into a cell.
  • a typical TFT array substrate includes a transparent substrate 11 and a TFT gate 120 sequentially on the surface of the transparent substrate 11, a gate insulating layer 13, an active layer 14, and TFTs on both sides of the active layer 14.
  • the electrode 16 and the second deuterated layer 17 and the slit-shaped second transparent electrode 18 are sequentially formed on the surface of the first transparent electrode 16.
  • a via hole is generally disposed on the surface of the first deuterated layer 15, and the via hole may be set as shown in FIG. 1 in consideration of the pixel aperture ratio.
  • the semi-lapped via 30 is shown. A portion of the first transparent electrode 16 on the surface of the half-lapped via 30 overlaps the surface of the drain electrode 121 of the TFT, and the other portion overlaps the surface of the gate insulating layer 13 at the bottom of the via hole 30.
  • the hole can increase the pixel aperture ratio.
  • Embodiments of the present invention provide an array substrate, a method of manufacturing the same, and a display device for avoiding light leakage of a display panel, thereby improving the quality of the display panel and improving the display effect.
  • An aspect of an embodiment of the present invention provides an array substrate, including: a transparent substrate, a TFT on the transparent substrate, and a first layer covering the TFT a first transparent electrode on the surface of the first deuterated layer and connected to the drain of the TFT through a via hole, wherein the array substrate has a lightproofing layer at the via hole Transmissive photoresist structure.
  • a display device including the array substrate as described above includes: forming a pattern of a first deuterated layer on a surface of a substrate on which a TFT is formed; passing through a surface of a substrate on which a pattern of a first deuterated layer is formed The patterning process forms a pattern of vias for connecting the first transparent electrode to be formed on the surface of the first deuterated layer and the drain of the TFT; and forming at the via position A photoresist structure that prevents light from transmitting.
  • the embodiment of the present invention provides an array substrate, a manufacturing method thereof, and a display device.
  • the array substrate includes: a transparent substrate, a TFT on the transparent substrate, a first deuterated layer covering the TFT, and a surface on the first deuterated layer.
  • a first transparent electrode connected to the drain of the TFT through the via, the via having a photoresist structure for preventing transmission of light.
  • the photoresist structure can block the light from being irradiated to the via portion not covered by the drain of the TFT, thereby avoiding the light leakage phenomenon of the display panel, thereby improving the quality of the display panel and improving the display effect.
  • FIG. 2 is a schematic structural view of an array substrate according to a first embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of an array substrate according to a second embodiment of the present invention
  • FIG. 4 is an array according to a third embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of an array substrate according to a fourth embodiment of the present invention
  • FIG. 6 is a schematic structural diagram of an array substrate according to a fifth embodiment of the present invention; A flow chart of a method of fabricating an array substrate;
  • FIG. 8 is a flow chart showing a method of fabricating an array substrate according to a seventh embodiment of the present invention.
  • FIG. 9 is a flow chart of a method for fabricating an array substrate according to an eighth embodiment of the present invention.
  • FIG. 10 is a flow chart of a method for fabricating an array substrate according to a ninth embodiment of the present invention.
  • An array substrate according to the first embodiment of the present invention may include: a transparent substrate 11, a TFT 12 on the transparent substrate 11, a first deuterated layer 15 covering the TFT 12, and a first The surface of the deuterated layer 15 and the first transparent electrode 16 connected to the drain electrode 121 of the TFT through the via hole 20, wherein the via hole 20 has a photoresist structure 21 for preventing light from transmitting.
  • a photoresist structure for preventing light transmission at a position of a via hole by forming a photoresist structure for preventing light transmission at a position of a via hole, light leakage caused by the through hole not being completely covered in the prior art can be effectively avoided. . In this way, the quality of the display panel is significantly improved, and the display effect of the display device is improved.
  • the photoresist structure 21 may specifically be a microstructure having a plurality of continuous slopes or curved surfaces. It should be noted that the above-mentioned microstructure having a plurality of continuous slopes or curved surfaces has
  • the present invention is not limited thereto. 1 , , , , , '', ,
  • the first deuterated layer 15 at the via 20 has the microstructure, and the surface of the first deuterated layer 15 forms the first transparent electrode 16 having the microstructure. .
  • the surface of the first deuterated layer 15 located at the via 20 has a zigzag irregular shape formed by a patterning process.
  • the surface of the first deuterated layer 15 at the via 20 is etched to control the etching depth, a portion of the first deuterated layer is retained, and then fabricated on the substrate on which the above structure is formed.
  • the first transparent electrode 16 is formed with a photoresist structure 21 having a zigzag-shaped irregular shape on its surface. In this way, the photoresist structure 21 can prevent the light from being transmitted, thereby avoiding the light leakage of the display panel, thereby improving the quality of the display panel and improving the display effect.
  • the drain 121 of the TFT located at the via 20 has the microstructure, and the surface of the drain 121 of the TFT forms the first transparent electrode 16 having the microstructure.
  • the surface of the drain electrode 121 of the TFT located at the via hole 20 has a zigzag irregular shape formed by a patterning process. For example, by using a mask exposure process, the surface of the drain 121 of the TFT at the via 20 is etched, the etching depth is controlled, a portion of the drain 121 of the TFT is retained, and then the first substrate is formed on the substrate having the above structure.
  • the transparent electrode 16 is formed with a photoresist structure 21 having a zigzag-shaped irregular shape on its surface.
  • the photoresist structure 21 can prevent the light from transmitting, and avoid leakage of the display panel. Light phenomenon, which improves the quality of the display panel and enhances the display effect.
  • the gate insulating layer 13 between the first deuterated layer 15 and the transparent substrate 11 at the via 20 has the microstructure, the surface of the gate insulating layer 13.
  • a first transparent electrode 16 having the microstructure is formed. Specifically, the surface of the gate insulating layer 13 located at the via hole 20 has a zigzag irregular shape formed by a patterning process.
  • the surface of the gate insulating layer 13 at the via 20 is etched to control the etching depth, a portion of the gate insulating layer 13 is left, and then the first substrate is formed on the substrate having the above structure.
  • the transparent electrode 16 is formed with a photoresist structure 21 having a zigzag-shaped irregular shape on its surface. In this way, the photoresist structure 21 can prevent the light from transmitting, avoiding the light leakage phenomenon of the display panel, thereby improving the quality of the display panel and improving the display effect.
  • the array substrate according to an embodiment of the present invention further includes a second deuterated layer 17 formed on the surface of the first transparent electrode 16 and a second transparent electrode 18 formed on the surface of the second deuterated layer 17.
  • the first transparent electrode 16 may be a plate-like structure
  • the second transparent electrode 18 may be a slit-like structure spaced apart from each other; or, the first transparent electrode 16 may be a slit-like structure spaced apart from each other, and the second transparent electrode 18 may be a plate-like structure; or both the first transparent electrode 16 and the second transparent electrode 18 may be slit-like structures.
  • the array substrate provided by the embodiment of the present invention can be applied to FFS (Fringe Field Switching) type or AD-SDS (Advanced-Super Dimensional Switching) type.
  • Liquid crystal display device For example, an electrode of a slit-like structure in which the first transparent electrode 16 and the second transparent electrode 18 are spaced apart is generally used as an ADS type liquid crystal display device, and the ADS technology passes through the same in-plane pixel.
  • the parallel electric field generated by the edge of the electrode and the longitudinal electric field generated between the pixel electrode layer and the common electrode layer form a multi-dimensional electric field, so that all the aligned liquid crystal molecules between the pixel electrodes in the liquid crystal cell and directly above the electrode can be rotated and converted, and other types of display.
  • the ADS type liquid crystal display device further improves the working efficiency of the planar orientation liquid crystal and increases the light transmission efficiency.
  • the first transparent electrode 16 may be a pixel electrode, and the second transparent electrode 18 may be a common electrode; or the first transparent electrode 16 may be a common electrode, and the second transparent electrode 18 may be Pixel electrode.
  • the invention is not limited thereto.
  • the patterning process may include only a photolithography process, or may include a photolithography process and an etching process, and may also include other processes for forming a predetermined pattern, such as printing, inkjet, etc.;
  • the engraving process refers to a process of forming a pattern using a photoresist, a mask, an exposure machine, or the like including a process of film formation, exposure, development, and the like.
  • the corresponding patterning process can be selected in accordance with the particular structure formed in the present invention.
  • the substrate formed with the via holes 20 may be subjected to ion bombardment etching, followed by ashing photoresist and ion bombardment etching, and a photoresist having a zigzag irregular shape on the surface of the via hole 20 may be obtained.
  • the structure 21 may be roughened to form a photoresist structure 21 having a zigzag irregularly shaped microstructure.
  • the photoresist structure 21 is specifically a light reflecting structure formed by the first deuterated layer 15 and the first transparent electrode 16, so that the existing hierarchical structure is located at the via hole 20 by changing
  • the shape can realize the design of the photoresist structure, so that no additional layer is required, and the thickness of the display device is effectively ensured.
  • the photoresist structure 21 includes a light shielding layer 22.
  • the light shielding layer 22 is located between the first transparent electrode 16 and the second vaporization layer 17.
  • the photoresist structure 21 having the irregular shape with a zigzag surface at the via hole 20 is located between the first transparent electrode 16 and the first vaporization layer 17.
  • the light shielding layer 22 can better prevent the light from passing through the via hole, thereby more effectively avoiding the light leakage phenomenon of the display panel and improving the display effect of the display device.
  • FIG. 6 only the photoresist structure 21 having the zigzag irregular shape microstructure and the light shielding layer at the via hole 20 is illustrated by using FIG. 6 as an example, and the via hole 20 has a zigzag shape at the same time.
  • Embodiments of the present invention provide a display device including any of the array substrates described above.
  • the display device may specifically be a liquid crystal display, a liquid crystal television, a digital photo frame, Any liquid crystal display product or component with display function, such as mobile phones and tablets.
  • An embodiment of the present invention provides a display device.
  • the display device includes an array substrate, and the array substrate includes: a transparent substrate, a TFT on the transparent substrate, a first deuterated layer covering the TFT, and a surface on the first deuterated layer.
  • the photoresist structure can prevent light from transmitting into the via portion not covered by the drain of the TFT, thereby avoiding light leakage of the display panel, thereby improving the quality of the display panel and improving the display effect.
  • the present invention further provides a method for fabricating an array substrate. As shown in FIG. 7 and in conjunction with FIG. 2, a method for fabricating an array substrate according to a sixth embodiment of the present invention includes the steps of:
  • the embodiment of the present invention provides a method for fabricating an array substrate.
  • the array substrate includes: a transparent substrate, a TFT on the transparent substrate, a first deuterated layer covering the TFT, a surface on the first deuterated layer, and a via hole and A first transparent electrode to which the drain of the TFT is connected, the via having a photoresist structure for preventing transmission of light.
  • the photoresist structure can prevent light from being transmitted into the via portion not covered by the drain of the TFT, thereby avoiding light leakage of the display panel, thereby improving the quality of the display panel and improving the display effect.
  • a method for fabricating an array substrate according to a seventh embodiment of the present invention includes:
  • the incident light is scattered through the photoresist structure 21 having the microstructure on the surface, thereby reducing the transmission of the incident light.
  • the light at the via 20 avoids the light leakage of the display device and improves the display effect of the display device.
  • the first deuterated layer 15 at the via 20 has the microstructure, and the surface of the first deuterated layer 15 forms the first transparent electrode 16 having the microstructure.
  • the surface of the first deuterated layer 15 located at the via 20 is formed into a saw-toothed irregular shape by a patterning process. For example, using a mask exposure process, the surface of the first deuterated layer 15 at the via 20 is etched to control the etching depth, a portion of the first deuterated layer is retained, and then fabricated on the substrate on which the above structure is formed.
  • the first transparent electrode 16 is formed with a photoresist structure 21 having a zigzag-shaped irregular shape on its surface. In this way, the photoresist structure 21 can prevent the light from transmitting, avoiding the light leakage phenomenon of the display panel, thereby improving the quality of the display panel and improving the display effect.
  • the drain 121 of the TFT located at the via 20 has the microstructure, and the surface of the drain 121 of the TFT forms the first transparent electrode 16 having the microstructure.
  • the surface of the drain 121 of the TFT located at the via 20 is formed in a zigzag irregular shape by a patterning process. For example, by using a mask exposure process, the surface of the drain 121 of the TFT at the via 20 is etched, the etching depth is controlled, a portion of the drain 121 of the TFT is retained, and then the first substrate is formed on the substrate having the above structure.
  • the transparent electrode 16 is formed with a photoresist structure 21 having a zigzag-shaped irregular shape on its surface. In this way, the photoresist structure 21 can prevent the light from transmitting, avoiding the light leakage phenomenon of the display panel, thereby improving the quality of the display panel and improving the display effect.
  • the gate insulating layer 13 between the first deuterated layer 15 and the transparent substrate 11 at the via 20 has the microstructure, and the surface of the gate insulating layer 13 is formed with the microstructure.
  • the first transparent electrode 16 Specifically, the surface of the gate insulating layer 13 located at the via hole 20 is formed into a zigzag irregular shape by a patterning process. For example, using mask In the film exposure process, the surface of the gate insulating layer 13 at the via 20 is etched to control the etching depth, a portion of the gate insulating layer 13 is left, and then the first transparent electrode 16 is formed on the substrate on which the above structure is formed. Forming a photoresist structure having a serrated irregular shape on the surface
  • the photoresist structure 21 can prevent the light from transmitting, thereby avoiding the light leakage phenomenon of the display panel, thereby improving the quality of the display panel and improving the display effect.
  • FIG. 2 is only a description of the fabrication method of the photoresist structure in the array substrate according to the present invention by taking FIG. 2, FIG. 3, FIG. 4 as an example, and other photoresists for preventing light transmission at the position of the via hole 20 are formed.
  • the method of fabricating the structure 21 is not repeated here, but should be within the scope of protection of the present invention.
  • the photoresist structure 21 may include a light shielding layer 22 formed on a substrate on which the first transparent electrode 16 is formed.
  • the via hole 20 is formed with both a microstructure having an irregular surface and a light shielding layer between the first transparent electrode 16 and the second vaporization layer 17.
  • the photoresist structure having the zigzag microstructure and the light shielding layer at the via 20 as an example, and the other has a jagged microstructure at the via 20 and The photoresist structure of the light-shielding layer is not repeated here, but should be within the scope of protection of the embodiments of the present invention.
  • a method for fabricating an array substrate according to an eighth embodiment of the present invention includes:
  • the semiconductor active layer is a metal oxide (IGZO);
  • first transparent electrode 16 Form a first transparent electrode 16 on a surface of the substrate on which the above pattern is formed, so that a photoresist structure 21 for preventing light transmission is formed at a position of the via hole 20, and the first transparent electrode 16 passes through the via hole 20 and the TFT.
  • the drain electrodes 121 are connected;
  • a second transparent electrode 18 is formed on the surface of the substrate on which the second deuterated layer 17 is formed.
  • the photoresist structure 21 is specifically a light reflection structure formed by the first deuteration layer 15 and the first transparent electrode 16, so that the existing hierarchical structure is changed.
  • the shape of the via structure can be realized by the shape of the via hole 20, so that no additional layer is required, and the thickness of the display device is effectively ensured.
  • a method of fabricating an array substrate according to a ninth embodiment of the present invention includes:
  • the semiconductor active layer is a metal oxide (IGZO);
  • a second transparent electrode 18 is formed on the surface of the substrate on which the second deuterated layer 17 is formed.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

An array substrate and a manufacturing method therefor, and a display device, which relate to the technical field of displays, so as to avoid the light leakage phenomenon of a display panel, thereby improving the display quality of the display panel and improving the display effect. The array substrate comprises a transparent substrate (11), a TFT (12) which is located on the transparent substrate (11), a first passivation layer (15) which covers the TFT (12), and a first transparent electrode (16) which is located on the surface of the first passivation layer (15) and is connected to the drain electrode (121) of the TFT (12) through a via hole (20), wherein a light resistance structure (21) used for preventing the transmission of light rays is arranged in the position of the via hole (20).

Description

一种阵列基板及其制造方法、 显示装置 技术领域 本发明涉及显示技术领域， 尤其涉及一种阵列基板及其制造方法、 显示装置。 背景技术 随着显示技术的飞速发展， TFT-LCD ( Thin Film Transistor Liquid Crystal Display, 薄膜晶体管液晶显示器）作为一种平板显示装置， 因 其具有体积小、 功耗低、 无辐射以及制作成本相对较低等特点， 而越 来越多地被应用于高性能显示领域当中。  TECHNICAL FIELD The present invention relates to the field of display technologies, and in particular, to an array substrate, a method for manufacturing the same, and a display device. BACKGROUND OF THE INVENTION With the rapid development of display technology, TFT-LCD (Thin Film Transistor Liquid Crystal Display) is a flat panel display device because of its small size, low power consumption, no radiation, and relatively low manufacturing cost. Low profile, and increasingly used in high performance display.

TFT-LCD显示面板的制造工艺包括： 制造阵列 （Array )基板和彩 膜（Color Filter )基板， 然后再将阵列基板和彩膜基板进行对位、 成盒 ( Cell ) 。 如图 1所示， 典型的 TFT阵列基板包括透明基板 11以及依 次位于透明基板 11表面上的 TFT栅极 120, 栅极绝缘层 13 , 有源层 14, 位于有源层 14两侧的 TFT的漏极 121和 TFT源极 122, 位于有源 层 14、 TFT漏极 121和 TFT源极 122表面上的第一飩化层 15, 位于第 一飩化层 15表面上的板状的第一透明电极 16 以及依次形成于第一透 明电极 16表面上的第二飩化层 17和狭缝状的第二透明电极 18。  The manufacturing process of the TFT-LCD display panel includes: manufacturing an array (Array) substrate and a color filter (Color Filter) substrate, and then aligning the array substrate and the color filter substrate into a cell. As shown in FIG. 1, a typical TFT array substrate includes a transparent substrate 11 and a TFT gate 120 sequentially on the surface of the transparent substrate 11, a gate insulating layer 13, an active layer 14, and TFTs on both sides of the active layer 14. a drain electrode 121 and a TFT source 122, a first deuterated layer 15 on the surface of the active layer 14, the TFT drain 121 and the TFT source 122, and a plate-shaped first transparent surface on the surface of the first deuterated layer 15. The electrode 16 and the second deuterated layer 17 and the slit-shaped second transparent electrode 18 are sequentially formed on the surface of the first transparent electrode 16.

为了将第一透明电极 16与 TFT漏极 121导通，通常会在第一飩化 层 15的表面设置有过孔， 并且考虑到像素开口率的因素， 可将该过孔 设置为如图 1所示的半搭接过孔 30。该半搭接过孔 30表面的第一透明 电极 16的一部分搭接在 TFT的漏极 121的表面上，另一部分搭接在过 孔 30底部栅极绝缘层 13的表面， 采用这样一种过孔可以增大像素开 口率。 然而， 因为第一透明电极 16透光， 所以在半搭接过孔 30处， 当背光源发出的光线照射到 TFT的漏极 121未覆盖的部分时， 将产生 漏光现象。 此外， 还由于制造误差的原因会导致该过孔的口径偏大于 设计值， 或者在阵列基板和彩膜基板进行对位成盒时， 由于对位精度 的限制， 很容易出现偏移， 造成过孔未完全覆盖， 从而发生漏光的现 象， 这种漏光现象严重制约了液晶面板的质量， 并降低了液晶显示器 件的显示效果。 发明内容 本发明的实施例提供一种阵列基板及其制造方法、 显示装置， 用 以避免显示面板的漏光现象， 从而提高显示面板的质量， 提升显示效 果。 In order to conduct the first transparent electrode 16 and the drain electrode 121 of the TFT, a via hole is generally disposed on the surface of the first deuterated layer 15, and the via hole may be set as shown in FIG. 1 in consideration of the pixel aperture ratio. The semi-lapped via 30 is shown. A portion of the first transparent electrode 16 on the surface of the half-lapped via 30 overlaps the surface of the drain electrode 121 of the TFT, and the other portion overlaps the surface of the gate insulating layer 13 at the bottom of the via hole 30. The hole can increase the pixel aperture ratio. However, since the first transparent electrode 16 is transparent, at the half overlap via 30, when light emitted from the backlight is irradiated to a portion of the TFT where the drain 121 is not covered, light leakage occurs. In addition, due to manufacturing errors, the diameter of the via hole is larger than the design value, or when the array substrate and the color filter substrate are aligned into a box, the offset is easily caused due to the limitation of the alignment accuracy. The hole is not completely covered, so that light leakage occurs For example, this light leakage phenomenon severely restricts the quality of the liquid crystal panel and reduces the display effect of the liquid crystal display device. SUMMARY OF THE INVENTION Embodiments of the present invention provide an array substrate, a method of manufacturing the same, and a display device for avoiding light leakage of a display panel, thereby improving the quality of the display panel and improving the display effect.

为达到上述目的， 本发明的实施例采用如下技术方案： 本发明实施例的一方面提供一种阵列基板， 包括： 透明基板、 位 于所述透明基板上的 TFT、 覆盖所述 TFT的第一飩化层、 位于所述第 一飩化层的表面且通过过孔与所述 TFT漏极相连接的第一透明电极， 其特征在于， 所述阵列基板在所述过孔处具有用于防止光线透射的光 阻结构。  In order to achieve the above object, an embodiment of the present invention adopts the following technical solutions: An aspect of an embodiment of the present invention provides an array substrate, including: a transparent substrate, a TFT on the transparent substrate, and a first layer covering the TFT a first transparent electrode on the surface of the first deuterated layer and connected to the drain of the TFT through a via hole, wherein the array substrate has a lightproofing layer at the via hole Transmissive photoresist structure.

本发明实施例的另一方面， 提供一种显示装置， 包括如上所述的 阵列基板。 本发明实施例的又一方面， 提供一种阵列基板的制造方法， 包括： 在形成有 TFT的基板表面形成第一飩化层的图案； 在形成有第一飩化层的图案的基板表面通过构图工艺形成过孔的 图案， 所述过孔用于连接将要形成在所述第一飩化层的表面的第一透 明电极和所述 TFT的漏极； 以及 在所述过孔位置处形成用于防止光线透射的光阻结构。 本发明实施例提供一种阵列基板及其制造方法、 显示装置， 该阵 列基板包括： 透明基板、 位于透明基板上的 TFT、 覆盖 TFT的第一飩 化层、 位于第一飩化层的表面且通过过孔与 TFT的漏极相连接的第一 透明电极， 该过孔处具有用于防止光线透射的光阻结构。 这样一来， 通过该光阻结构可以阻挡光线照射到未被 TFT漏极覆盖的过孔部分， 避免显示面板的漏光现象， 从而提高显示面板的质量， 提升显示效果。 附图说明 为了更清楚地说明本发明实施例的技术方案，下面将参照附图对本发明 进行详细地描述。 图 1为现有技术中的阵列基板结构示意图； In another aspect of an embodiment of the present invention, a display device including the array substrate as described above is provided. According to still another aspect of the present invention, a method for fabricating an array substrate includes: forming a pattern of a first deuterated layer on a surface of a substrate on which a TFT is formed; passing through a surface of a substrate on which a pattern of a first deuterated layer is formed The patterning process forms a pattern of vias for connecting the first transparent electrode to be formed on the surface of the first deuterated layer and the drain of the TFT; and forming at the via position A photoresist structure that prevents light from transmitting. The embodiment of the present invention provides an array substrate, a manufacturing method thereof, and a display device. The array substrate includes: a transparent substrate, a TFT on the transparent substrate, a first deuterated layer covering the TFT, and a surface on the first deuterated layer. A first transparent electrode connected to the drain of the TFT through the via, the via having a photoresist structure for preventing transmission of light. In this way, the photoresist structure can block the light from being irradiated to the via portion not covered by the drain of the TFT, thereby avoiding the light leakage phenomenon of the display panel, thereby improving the quality of the display panel and improving the display effect. BRIEF DESCRIPTION OF THE DRAWINGS In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the present invention will be described below with reference to the accompanying drawings. Describe in detail. 1 is a schematic structural view of an array substrate in the prior art;

图 2为本发明第一实施例提供的一种阵列基板结构示意图； 图 3为本发明第二实施例提供的一种阵列基板结构示意图； 图 4为本发明第三实施例提供的一种阵列基板结构示意图； 图 5为本发明第四实施例提供的一种阵列基板结构示意图； 图 6为本发明第五实施例提供的一种阵列基板结构示意图； 图 7 为本发明第六实施例提供的一种阵列基板的制造方法的流程 图；  2 is a schematic structural view of an array substrate according to a first embodiment of the present invention; FIG. 3 is a schematic structural diagram of an array substrate according to a second embodiment of the present invention; FIG. 4 is an array according to a third embodiment of the present invention. FIG. 5 is a schematic structural diagram of an array substrate according to a fourth embodiment of the present invention; FIG. 6 is a schematic structural diagram of an array substrate according to a fifth embodiment of the present invention; A flow chart of a method of fabricating an array substrate;

图 8 为本发明第七实施例提供的一种阵列基板的制造方法的流程 图；  8 is a flow chart showing a method of fabricating an array substrate according to a seventh embodiment of the present invention;

图 9 为本发明第八实施例提供的一种阵列基板的制造方法的流程 图； 以及 图 10为本发明第九实施例提供的一种阵列基板的制造方法的流程 图。  9 is a flow chart of a method for fabricating an array substrate according to an eighth embodiment of the present invention; and FIG. 10 is a flow chart of a method for fabricating an array substrate according to a ninth embodiment of the present invention.

具体实施方式 下面将结合附图，对本发明实施例中的技术方案进行清楚、完整地描述， 显然，所描述的实施例仅仅是本发明示意性实施例， 而不是穷举了能够实现 本发明构思的全部实施例。基于本发明中所述的实施例，本领域普通技术人 员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保 护的范围。 The technical solutions in the embodiments of the present invention are clearly and completely described in the following with reference to the accompanying drawings, and the embodiments of the present invention are merely exemplary embodiments of the present invention. All embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments described herein without departing from the inventive scope are the scope of the invention.

根据本发明第一实施例的一种阵列基板， 如图 2所示， 可以包括： 透明基板 11、 位于透明基板 11上的 TFT 12、 覆盖该 TFT 12的第一飩 化层 15、 位于第一飩化层 15的表面且通过过孔 20与 TFT的漏极 121 相连接的第一透明电极 16, 其中， 过孔 20处具有用于防止光线透射的 光阻结构 21。 在本发明实施例提供的一种阵列基板中， 通过在过孔位置处制作 用于防止光线透射的光阻结构， 从而可以有效避免现有技术中过孔由 于未被完全覆盖而产生的漏光现象。 这样一来， 显著提高了显示面板 的质量， 提升了显示装置的显示效果。 An array substrate according to the first embodiment of the present invention, as shown in FIG. 2, may include: a transparent substrate 11, a TFT 12 on the transparent substrate 11, a first deuterated layer 15 covering the TFT 12, and a first The surface of the deuterated layer 15 and the first transparent electrode 16 connected to the drain electrode 121 of the TFT through the via hole 20, wherein the via hole 20 has a photoresist structure 21 for preventing light from transmitting. In an array substrate provided by an embodiment of the present invention, by forming a photoresist structure for preventing light transmission at a position of a via hole, light leakage caused by the through hole not being completely covered in the prior art can be effectively avoided. . In this way, the quality of the display panel is significantly improved, and the display effect of the display device is improved.

如图 2所示， 光阻结构 21具体可以为具有连续的多个斜面或者曲 面的微结构。 需要说明的是， 上述具有连续的多个斜面或者曲面的微结构， 具  As shown in FIG. 2, the photoresist structure 21 may specifically be a microstructure having a plurality of continuous slopes or curved surfaces. It should be noted that the above-mentioned microstructure having a plurality of continuous slopes or curved surfaces has

是本发明不限 ^此。 1 , 、 、 、 、 ' '、 、 The present invention is not limited thereto. 1 , , , , , '', ,

这样一来， 当背光源发出的光线照射到该过孔 20处 TFT的漏极 121 未覆盖的部分时， 通过表面具有锯齿状的不规则形状的光阻结构 21将入射光线散射开， 减少了透过该过孔 20处的光线， 从而避免了显 示器件的漏光现象， 提高了显示器件的显示效果。 根据本发明第一实施例， 如图 2所示， 位于过孔 20处的第一飩化 层 15具有该微结构， 第一飩化层 15的表面形成具有该微结构的第一 透明电极 16。 具体的， 位于过孔 20处的第一飩化层 15的表面具有通 过构图工艺形成的锯齿状的不规则形状。 例如， 采用掩膜曝光工艺， 再对过孔 20处的第一飩化层 15的表面进行刻蚀， 控制刻蚀深度， 保 留一部分的第一飩化层， 然后在形成以上结构的基板上制作第一透明 电极 16, 形成表面具有锯齿状的不规则形状的光阻结构 21。 这样一来 该光阻结构 21可以起到防止光线透射的作用， 避免显示面板的漏光现 象， 从而提高显示面板的质量， 提升显示效果。  In this way, when the light emitted by the backlight illuminates the uncovered portion of the TFT 121 at the via 20, the incident light is scattered by the irregularly shaped photoresist structure 21 having a sawtooth shape, which reduces the incidence. Through the light at the via 20, light leakage of the display device is avoided, and the display effect of the display device is improved. According to the first embodiment of the present invention, as shown in FIG. 2, the first deuterated layer 15 at the via 20 has the microstructure, and the surface of the first deuterated layer 15 forms the first transparent electrode 16 having the microstructure. . Specifically, the surface of the first deuterated layer 15 located at the via 20 has a zigzag irregular shape formed by a patterning process. For example, by using a mask exposure process, the surface of the first deuterated layer 15 at the via 20 is etched to control the etching depth, a portion of the first deuterated layer is retained, and then fabricated on the substrate on which the above structure is formed. The first transparent electrode 16 is formed with a photoresist structure 21 having a zigzag-shaped irregular shape on its surface. In this way, the photoresist structure 21 can prevent the light from being transmitted, thereby avoiding the light leakage of the display panel, thereby improving the quality of the display panel and improving the display effect.

根据本发明第二实施例， 如图 3所示， 位于过孔 20处的 TFT的漏 极 121具有该微结构， TFT的漏极 121 的表面形成具有该微结构的第 一透明电极 16。 具体的， 位于过孔 20处的 TFT的漏极 121的表面具 有通过构图工艺形成的锯齿状的不规则形状。 例如， 采用掩膜曝光工 艺，再对过孔 20处的 TFT的漏极 121的表面进行刻蚀，控制刻蚀深度， 保留一部分 TFT的漏极 121 , 然后在形成以上结构的基板上制作第一 透明电极 16, 形成表面具有锯齿状的不规则形状的光阻结构 21。 这样 一来该光阻结构 21可以起到防止光线透射的作用， 避免显示面板的漏 光现象， 从而提高显示面板的质量， 提升显示效果。 根据本发明第三实施例， 如图 4所示， 位于过孔 20处的第一飩化 层 15与透明基板 11之间的栅极绝缘层 13具有该微结构， 栅极绝缘层 13的表面形成具有该微结构的第一透明电极 16。 具体的， 位于过孔 20 处的栅极绝缘层 13的表面具有通过构图工艺形成的锯齿状的不规则形 状。 例如， 采用掩膜曝光工艺， 再对过孔 20处的栅极绝缘层 13的表 面进行刻蚀， 控制刻蚀深度， 保留一部分栅极绝缘层 13 , 然后在形成 以上结构的基板上制作第一透明电极 16, 形成表面具有锯齿状的不规 则形状的光阻结构 21。这样一来该光阻结构 21可以起到防止光线透射 的作用， 避免显示面板的漏光现象， 从而提高显示面板的质量， 提升 显示效果。 According to the second embodiment of the present invention, as shown in FIG. 3, the drain 121 of the TFT located at the via 20 has the microstructure, and the surface of the drain 121 of the TFT forms the first transparent electrode 16 having the microstructure. Specifically, the surface of the drain electrode 121 of the TFT located at the via hole 20 has a zigzag irregular shape formed by a patterning process. For example, by using a mask exposure process, the surface of the drain 121 of the TFT at the via 20 is etched, the etching depth is controlled, a portion of the drain 121 of the TFT is retained, and then the first substrate is formed on the substrate having the above structure. The transparent electrode 16 is formed with a photoresist structure 21 having a zigzag-shaped irregular shape on its surface. In this way, the photoresist structure 21 can prevent the light from transmitting, and avoid leakage of the display panel. Light phenomenon, which improves the quality of the display panel and enhances the display effect. According to the third embodiment of the present invention, as shown in FIG. 4, the gate insulating layer 13 between the first deuterated layer 15 and the transparent substrate 11 at the via 20 has the microstructure, the surface of the gate insulating layer 13. A first transparent electrode 16 having the microstructure is formed. Specifically, the surface of the gate insulating layer 13 located at the via hole 20 has a zigzag irregular shape formed by a patterning process. For example, using a mask exposure process, the surface of the gate insulating layer 13 at the via 20 is etched to control the etching depth, a portion of the gate insulating layer 13 is left, and then the first substrate is formed on the substrate having the above structure. The transparent electrode 16 is formed with a photoresist structure 21 having a zigzag-shaped irregular shape on its surface. In this way, the photoresist structure 21 can prevent the light from transmitting, avoiding the light leakage phenomenon of the display panel, thereby improving the quality of the display panel and improving the display effect.

当然， 上述仅仅是以图 2、 图 3、 图 4为例对光阻结构的图案进行 描述， 其他在过孔 20位置处形成用于防止光线透射的光阻结构 21 的 图案在这里不再——赘述， 但都应当属于本发明的保护范围。 进一步地， 根据本发明实施例的阵列基板还包括在第一透明电极 16表面上形成的第二飩化层 17以及在第二飩化层 17的表面形成的第 二透明电极 18。  Of course, the above description only describes the pattern of the photoresist structure by taking FIG. 2, FIG. 3, FIG. 4 as an example, and the other pattern of the photoresist structure 21 formed at the position of the via hole 20 for preventing light transmission is no longer here- - Descriptive, but all should fall within the scope of protection of the present invention. Further, the array substrate according to an embodiment of the present invention further includes a second deuterated layer 17 formed on the surface of the first transparent electrode 16 and a second transparent electrode 18 formed on the surface of the second deuterated layer 17.

具体的， 第一透明电极 16可以为板状结构， 第二透明电极 18可 以为相互间隔的狭缝状结构； 或， 第一透明电极 16可以为相互间隔的 狭缝状结构， 第二透明电极 18 可以为板状结构； 或第一透明电极 16 和第二透明电极 18均可以为狭缝状结构。  Specifically, the first transparent electrode 16 may be a plate-like structure, and the second transparent electrode 18 may be a slit-like structure spaced apart from each other; or, the first transparent electrode 16 may be a slit-like structure spaced apart from each other, and the second transparent electrode 18 may be a plate-like structure; or both the first transparent electrode 16 and the second transparent electrode 18 may be slit-like structures.

例如，本发明实施例提供的阵列基板可以适用于 FFS ( Fringe Field Switching, 边缘场开关） 型或 AD-SDS ( Advanced-Super Dimensional Switching, 筒称为 ADS, 高级超维场开关）型等类型的液晶显示装置。 以第一透明电极 16和第二透明电极 18均为间隔设置的狭缝状结构的 电极为例，这样一种结构的阵列基板通常被用作 ADS型液晶显示装置， ADS 技术通过同一平面内像素电极边缘所产生的平行电场以及像素电 极层与公共电极层间产生的纵向电场形成多维电场， 使液晶盒内像素 电极间、 电极正上方所有取向液晶分子都能够产生旋转转换， 与其他 类型的显示装置相比， ADS 型液晶显示装置进一步提高了平面取向系 液晶工作效率并增大了透光效率。 需要说明的是， 在本发明实施例中， 第一透明电极 16可以为像素 电极， 第二透明电极 18可以为公共电极； 或者第一透明电极 16可以 为公共电极， 第二透明电极 18可以为像素电极。 本发明对此并不作限 制。 For example, the array substrate provided by the embodiment of the present invention can be applied to FFS (Fringe Field Switching) type or AD-SDS (Advanced-Super Dimensional Switching) type. Liquid crystal display device. For example, an electrode of a slit-like structure in which the first transparent electrode 16 and the second transparent electrode 18 are spaced apart is generally used as an ADS type liquid crystal display device, and the ADS technology passes through the same in-plane pixel. The parallel electric field generated by the edge of the electrode and the longitudinal electric field generated between the pixel electrode layer and the common electrode layer form a multi-dimensional electric field, so that all the aligned liquid crystal molecules between the pixel electrodes in the liquid crystal cell and directly above the electrode can be rotated and converted, and other types of display. Compared with the device, the ADS type liquid crystal display device further improves the working efficiency of the planar orientation liquid crystal and increases the light transmission efficiency. It should be noted that, in the embodiment of the present invention, the first transparent electrode 16 may be a pixel electrode, and the second transparent electrode 18 may be a common electrode; or the first transparent electrode 16 may be a common electrode, and the second transparent electrode 18 may be Pixel electrode. The invention is not limited thereto.

需要说明的是， 在本发明中， 构图工艺， 可只包括光刻工艺， 或， 包括光刻工艺以及刻蚀工艺， 同时还可以包括打印、 喷墨等其他用于 形成预定图形的工艺； 光刻工艺， 是指包括成膜、 曝光、 显影等工艺 过程的利用光刻胶、 掩模板、 曝光机等形成图形的工艺。 可根据本发 明中所形成的特定结构选择相应的构图工艺。 例如， 可以对形成有过 孔 20的基板进行离子轰击刻蚀， 再进行灰化光刻胶和离子轰击刻蚀， 可得到过孔 20 处表面具有锯齿状的不规则形状的微结构的光阻结构 21 , 或可以将其表面粗糙化以形成具有锯齿状的不规则形状的微结构 的光阻结构 21。  It should be noted that, in the present invention, the patterning process may include only a photolithography process, or may include a photolithography process and an etching process, and may also include other processes for forming a predetermined pattern, such as printing, inkjet, etc.; The engraving process refers to a process of forming a pattern using a photoresist, a mask, an exposure machine, or the like including a process of film formation, exposure, development, and the like. The corresponding patterning process can be selected in accordance with the particular structure formed in the present invention. For example, the substrate formed with the via holes 20 may be subjected to ion bombardment etching, followed by ashing photoresist and ion bombardment etching, and a photoresist having a zigzag irregular shape on the surface of the via hole 20 may be obtained. The structure 21 may be roughened to form a photoresist structure 21 having a zigzag irregularly shaped microstructure.

采用上述的这样一种阵列基板， 光阻结构 21具体是由第一飩化层 15和第一透明电极 16形成的光反射结构， 这样一来， 通过改变现有层 级结构位于过孔 20处的形状即可实现光阻结构的设计， 从而无需额外 设置新的层级， 有效保证了显示装置的厚度。  With such an array substrate as described above, the photoresist structure 21 is specifically a light reflecting structure formed by the first deuterated layer 15 and the first transparent electrode 16, so that the existing hierarchical structure is located at the via hole 20 by changing The shape can realize the design of the photoresist structure, so that no additional layer is required, and the thickness of the display device is effectively ensured.

进一步地， 光阻结构 21包括遮光层 22。 根据本发明第四实施例， 如图 5所示， 遮光层 22位于第一透明电 极 16与第二飩化层 17之间。  Further, the photoresist structure 21 includes a light shielding layer 22. According to the fourth embodiment of the present invention, as shown in FIG. 5, the light shielding layer 22 is located between the first transparent electrode 16 and the second vaporization layer 17.

根据本发明第五实施例， 如图 6所示， 过孔 20处既具有表面为锯 齿状的不规则形状的光阻结构 21 又具有位于第一透明电极 16与第一 飩化层 17之间的遮光层 22,这样一来可以更好的起到防止光线透过该 过孔的作用， 从而更有效的避免了显示面板的漏光现象， 提高了显示 器件的显示效果。 需要说明的是， 这里仅仅是以图 6为例对过孔 20处 同时具有锯齿状的不规则形状的微结构和遮光层的光阻结构 21进行的 说明， 在过孔 20处同时具有锯齿状的不规则形状的微结构和遮光层的 其它光阻结构在这里不再——赘述， 但都应当属于本发明实施例的保 护范围之内。 本发明的实施例提供一种显示装置， 包括如上所述的任意一种阵 列基板。 该显示装置具体可以为液晶显示器、 液晶电视、 数码相框、 手机、 平板电脑等任何具有显示功能的液晶显示产品或者部件。 本发明实施例提供一种显示装置， 该显示装置包括阵列基板， 该 阵列基板包括： 透明基板、 位于透明基板上的 TFT、 覆盖 TFT的第一 飩化层、 位于第一飩化层的表面且通过过孔与 TFT的漏极相连接的第 一透明电极， 其中该过孔处具有用于防止光线透射的光阻结构。 这样 一来， 通过该光阻结构可以防止光线透射进入未被 TFT漏极覆盖的过 孔部分， 以避免显示面板的漏光现象， 从而提高显示面板的质量， 提 升显示效果。 进一步， 本发明还提供了一种阵列基板的制造方法， 如图 7 并结 合图 2所示， 根据本发明第六实施例的阵列基板的制造方法包括步骤： According to the fifth embodiment of the present invention, as shown in FIG. 6, the photoresist structure 21 having the irregular shape with a zigzag surface at the via hole 20 is located between the first transparent electrode 16 and the first vaporization layer 17. The light shielding layer 22 can better prevent the light from passing through the via hole, thereby more effectively avoiding the light leakage phenomenon of the display panel and improving the display effect of the display device. It should be noted that, here, only the photoresist structure 21 having the zigzag irregular shape microstructure and the light shielding layer at the via hole 20 is illustrated by using FIG. 6 as an example, and the via hole 20 has a zigzag shape at the same time. The irregularly shaped microstructures and other photoresist structures of the light-shielding layer are not repeated here, but are all within the scope of protection of the embodiments of the present invention. Embodiments of the present invention provide a display device including any of the array substrates described above. The display device may specifically be a liquid crystal display, a liquid crystal television, a digital photo frame, Any liquid crystal display product or component with display function, such as mobile phones and tablets. An embodiment of the present invention provides a display device. The display device includes an array substrate, and the array substrate includes: a transparent substrate, a TFT on the transparent substrate, a first deuterated layer covering the TFT, and a surface on the first deuterated layer. A first transparent electrode connected to the drain of the TFT through the via hole, wherein the via hole has a photoresist structure for preventing transmission of light. In this way, the photoresist structure can prevent light from transmitting into the via portion not covered by the drain of the TFT, thereby avoiding light leakage of the display panel, thereby improving the quality of the display panel and improving the display effect. Further, the present invention further provides a method for fabricating an array substrate. As shown in FIG. 7 and in conjunction with FIG. 2, a method for fabricating an array substrate according to a sixth embodiment of the present invention includes the steps of:

5101、 在形成有薄膜晶体管的基板表面形成第一飩化层的图案；5101. Form a pattern of a first deuterated layer on a surface of a substrate on which a thin film transistor is formed;

5102、 在形成有第一飩化层的图案的基板表面通过构图工艺形成 过孔的图案， 所述过孔用于连接将要形成在所述第一飩化层的表面的 第一透明电极和 TFT的漏极； 以及 5102, forming a pattern of via holes by a patterning process on a surface of the substrate on which the pattern of the first deuterated layer is formed, the via holes for connecting the first transparent electrode and the TFT to be formed on the surface of the first deuterated layer Drain; and

5103、 在过孔位置处形成用于防止光线透射的光阻结构。 本发明实施例提供一种阵列基板的制造方法， 该阵列基板包括： 透明基板、 位于透明基板上的 TFT、 覆盖 TFT的第一飩化层、 位于第 一飩化层的表面且通过过孔与 TFT的漏极相连接的第一透明电极， 该 过孔处具有用于防止光线透射的光阻结构。 这样一来， 通过该光阻结 构可以防止光线透射进入未被 TFT漏极覆盖的过孔部分， 避免显示面 板的漏光现象， 从而提高显示面板的质量， 提升显示效果。 5103. Form a photoresist structure for preventing light transmission at the via position. The embodiment of the present invention provides a method for fabricating an array substrate. The array substrate includes: a transparent substrate, a TFT on the transparent substrate, a first deuterated layer covering the TFT, a surface on the first deuterated layer, and a via hole and A first transparent electrode to which the drain of the TFT is connected, the via having a photoresist structure for preventing transmission of light. In this way, the photoresist structure can prevent light from being transmitted into the via portion not covered by the drain of the TFT, thereby avoiding light leakage of the display panel, thereby improving the quality of the display panel and improving the display effect.

进一步地， 如图 8并结合图 2所示， 根据本发明第七实施例的一 种阵列基板的制造方法包括：  Further, as shown in FIG. 8 and in conjunction with FIG. 2, a method for fabricating an array substrate according to a seventh embodiment of the present invention includes:

5201、 在形成有薄膜晶体管的基板表面形成第一飩化层的图案； 5201, forming a pattern of the first deuterated layer on the surface of the substrate on which the thin film transistor is formed;

5202、 在形成有第一飩化层的图案的基板表面通过构图工艺形成 过孔的图案， 所述过孔用于连接将要形成在所述第一飩化层的表面的 第一透明电极和 TFT的漏极； 5202, forming a pattern of via holes by a patterning process on a surface of the substrate on which the pattern of the first deuterated layer is formed, the via holes for connecting the first transparent electrode and the TFT to be formed on the surface of the first deuterated layer Drain

5203、 通过构图工艺在过孔处形成表面具有连续的多个斜面或者 曲面的微结构的光阻结构； 以及 S204、 在形成有包括微结构的光阻结构的基板表面上形成具有微 结构的第一透明电极。 需要说明的是， 上述具有连续的多个斜面或者曲面的微结构， 具 5203. Form a photoresist structure having a plurality of continuous slopes or curved surfaces on the surface at the via hole by a patterning process; and S204, forming a first transparent electrode having a microstructure on a surface of the substrate on which the photoresist structure including the microstructure is formed. It should be noted that the above-mentioned microstructure having a plurality of continuous slopes or curved surfaces has

这样一来， 当背光源发出的光线照射到该过孔 20处 TFT的漏极 121未覆盖的部分时， 通过表面具有该微结构的光阻结构 21将入射光 线散射开， 减少了透过该过孔 20处的光线， 从而避免了显示器件的漏 光现象， 提高了显示器件的显示效果。 In this way, when the light emitted by the backlight is irradiated to the uncovered portion of the TFT 121 at the via 20, the incident light is scattered through the photoresist structure 21 having the microstructure on the surface, thereby reducing the transmission of the incident light. The light at the via 20 avoids the light leakage of the display device and improves the display effect of the display device.

进一步地， 如图 2所示， 位于过孔 20处的第一飩化层 15具有该 微结构， 第一飩化层 15的表面形成具有该微结构的第一透明电极 16。 具体的， 位于过孔 20处的第一飩化层 15的表面通过构图工艺形成锯 齿状的不规则形状。 例如， 采用掩膜曝光工艺， 再对过孔 20处的第一 飩化层 15的表面进行刻蚀，控制刻蚀深度，保留一部分的第一飩化层， 然后在形成以上结构的基板上制作第一透明电极 16, 形成表面具有锯 齿状的不规则形状的光阻结构 21。这样一来该光阻结构 21可以起到防 止光线透射的作用， 避免显示面板的漏光现象， 从而提高显示面板的 质量， 提升显示效果。  Further, as shown in Fig. 2, the first deuterated layer 15 at the via 20 has the microstructure, and the surface of the first deuterated layer 15 forms the first transparent electrode 16 having the microstructure. Specifically, the surface of the first deuterated layer 15 located at the via 20 is formed into a saw-toothed irregular shape by a patterning process. For example, using a mask exposure process, the surface of the first deuterated layer 15 at the via 20 is etched to control the etching depth, a portion of the first deuterated layer is retained, and then fabricated on the substrate on which the above structure is formed. The first transparent electrode 16 is formed with a photoresist structure 21 having a zigzag-shaped irregular shape on its surface. In this way, the photoresist structure 21 can prevent the light from transmitting, avoiding the light leakage phenomenon of the display panel, thereby improving the quality of the display panel and improving the display effect.

进一步地， 如图 3所示， 位于过孔 20处的 TFT的漏极 121具有该 微结构， TFT的漏极 121的表面形成具有该微结构的第一透明电极 16。 具体的，位于过孔 20处的 TFT的漏极 121的表面通过构图工艺形成的 锯齿状的不规则形状。例如，采用掩膜曝光工艺，再对过孔 20处的 TFT 的漏极 121的表面进行刻蚀， 控制刻蚀深度， 保留一部分 TFT的漏极 121 , 然后在形成以上结构的基板上制作第一透明电极 16, 形成表面具 有锯齿状的不规则形状的光阻结构 21。这样一来该光阻结构 21可以起 到防止光线透射的作用， 避免显示面板的漏光现象， 从而提高显示面 板的质量， 提升显示效果。  Further, as shown in FIG. 3, the drain 121 of the TFT located at the via 20 has the microstructure, and the surface of the drain 121 of the TFT forms the first transparent electrode 16 having the microstructure. Specifically, the surface of the drain 121 of the TFT located at the via 20 is formed in a zigzag irregular shape by a patterning process. For example, by using a mask exposure process, the surface of the drain 121 of the TFT at the via 20 is etched, the etching depth is controlled, a portion of the drain 121 of the TFT is retained, and then the first substrate is formed on the substrate having the above structure. The transparent electrode 16 is formed with a photoresist structure 21 having a zigzag-shaped irregular shape on its surface. In this way, the photoresist structure 21 can prevent the light from transmitting, avoiding the light leakage phenomenon of the display panel, thereby improving the quality of the display panel and improving the display effect.

进一步地， 如图 4所示， 位于过孔 20处的第一飩化层 15与透明 基板 11之间的栅极绝缘层 13具有该微结构， 栅极绝缘层 13的表面形 成具有该微结构的第一透明电极 16。 具体的， 位于过孔 20处的栅极绝 缘层 13的表面通过构图工艺形成锯齿状的不规则形状。 例如， 采用掩 膜曝光工艺， 再对过孔 20处的栅极绝缘层 13的表面进行刻蚀， 控制 刻蚀深度， 保留一部分栅极绝缘层 13 , 然后在形成以上结构的基板上 制作第一透明电极 16, 形成表面具有锯齿状的不规则形状的光阻结构Further, as shown in FIG. 4, the gate insulating layer 13 between the first deuterated layer 15 and the transparent substrate 11 at the via 20 has the microstructure, and the surface of the gate insulating layer 13 is formed with the microstructure. The first transparent electrode 16. Specifically, the surface of the gate insulating layer 13 located at the via hole 20 is formed into a zigzag irregular shape by a patterning process. For example, using mask In the film exposure process, the surface of the gate insulating layer 13 at the via 20 is etched to control the etching depth, a portion of the gate insulating layer 13 is left, and then the first transparent electrode 16 is formed on the substrate on which the above structure is formed. Forming a photoresist structure having a serrated irregular shape on the surface

21。 这样一来该光阻结构 21可以起到防止光线透射的作用， 避免显示 面板的漏光现象， 从而提高显示面板的质量， 提升显示效果。 twenty one. In this way, the photoresist structure 21 can prevent the light from transmitting, thereby avoiding the light leakage phenomenon of the display panel, thereby improving the quality of the display panel and improving the display effect.

当然， 上述仅仅是以图 2、 图 3、 图 4为例对根据本发明的阵列基 板中的光阻结构的制作方法进行描述， 其他在过孔 20位置处形成用于 防止光线透射的光阻结构 21的制作方法在这里不再——赘述， 但都应 当属于本发明的保护范围。  Of course, the above is only a description of the fabrication method of the photoresist structure in the array substrate according to the present invention by taking FIG. 2, FIG. 3, FIG. 4 as an example, and other photoresists for preventing light transmission at the position of the via hole 20 are formed. The method of fabricating the structure 21 is not repeated here, but should be within the scope of protection of the present invention.

进一步地， 如图 5所示， 所述光阻结构 21可以包括在形成有第一 透明电极 16的基板上形成的遮光层 22。  Further, as shown in FIG. 5, the photoresist structure 21 may include a light shielding layer 22 formed on a substrate on which the first transparent electrode 16 is formed.

进一步地， 如图 6所示， 过孔 20处既形成有表面为不规则形状的 微结构又形成有位于第一透明电极 16与第二飩化层 17之间的遮光层 Further, as shown in FIG. 6, the via hole 20 is formed with both a microstructure having an irregular surface and a light shielding layer between the first transparent electrode 16 and the second vaporization layer 17.

22, 这样一来可以更好的起到防止光线透过该过孔的作用， 从而更有 效的避免了显示面板的漏光现象， 提高了显示器件的显示效果。 需要 说明的是， 这里仅仅是以图 6为例对过孔 20处同时具有锯齿状的微结 构和遮光层的光阻结构进行的说明， 其它在过孔 20处同时具有锯齿状 的微结构和遮光层的光阻结构在这里不再——赘述， 但都应当属于本 发明实施例的保护范围之内。 22, this can better prevent the light from passing through the via hole, thereby more effectively avoiding the light leakage phenomenon of the display panel and improving the display effect of the display device. It should be noted that, here is only a description of the photoresist structure having the zigzag microstructure and the light shielding layer at the via 20 as an example, and the other has a jagged microstructure at the via 20 and The photoresist structure of the light-shielding layer is not repeated here, but should be within the scope of protection of the embodiments of the present invention.

具体的， 参照图 9并结合图 2, 根据本发明第八实施例的一种阵列 基板的制造方法包括：  Specifically, referring to FIG. 9 and in conjunction with FIG. 2, a method for fabricating an array substrate according to an eighth embodiment of the present invention includes:

5301、 在透明基板 11 的表面通过构图工艺形成 TFT 的栅极 120 的图案； 5301. Form a pattern of the gate electrode 120 of the TFT by a patterning process on a surface of the transparent substrate 11;

5302、 在 TFT的栅极 120的表面覆盖栅极绝缘层 13;  5302, covering the surface of the gate 120 of the TFT with the gate insulating layer 13;

5303、 在栅极绝缘层 13的表面对应 TFT 12的沟道位置处采用隔 离技术 （lift-out ) 形成半导体有源层 14, 该半导体有源层为金属氧化 物 （IGZO ) ；  5303, forming a semiconductor active layer 14 by using a lift-out at a surface of the gate insulating layer 13 corresponding to the channel position of the TFT 12; the semiconductor active layer is a metal oxide (IGZO);

5304、在半导体有源层 14的表面形成 TFT的源极 122和漏极 121 , 该步骤结束后， 完成了对 TFT 12的制作；  5304, forming a source 122 and a drain 121 of the TFT on the surface of the semiconductor active layer 14. After the step is completed, the fabrication of the TFT 12 is completed;

5305、 在形成有 TFT 12的基板表面形成第一飩化层 15的图案； 5306、 在形成有上述图案的基板表面利用特殊设计的掩模板， 通 过一次构图工艺得到不同曝光量对应的光刻胶下半搭接的过孔 20; 5305, forming a pattern of the first deuterated layer 15 on the surface of the substrate on which the TFT 12 is formed; 5306, using a specially designed mask on the surface of the substrate on which the above-mentioned pattern is formed, by using a patterning process, obtaining the lower half-overlap 20 of the photoresist corresponding to different exposure amounts;

5307、 对完成上述步骤形成的过孔 20进行离子轰击刻蚀， 再进行 灰化光刻胶和离子轰击刻蚀， 可使得过孔 20处基底形成锯齿状的不规 则形状， 或其表面被粗糙化； 5307. performing ion bombardment etching on the via hole 20 formed by the above steps, and performing ashing photoresist and ion bombardment etching, so that the substrate at the via hole 20 is formed into a zigzag irregular shape, or the surface thereof is roughened. Chemical

5308、 在形成有上述图案的基板表面形成第一透明电极 16, 这样 就在过孔 20位置处形成用于防止光线透射的光阻结构 21 ,该第一透明 电极 16通过该过孔 20与 TFT的漏极 121相连接；  5308. Form a first transparent electrode 16 on a surface of the substrate on which the above pattern is formed, so that a photoresist structure 21 for preventing light transmission is formed at a position of the via hole 20, and the first transparent electrode 16 passes through the via hole 20 and the TFT. The drain electrodes 121 are connected;

5309、 在形成有第一透明电极 16的基板表面形成第二飩化层 17; 以及  5309, forming a second deuterated layer 17 on a surface of the substrate on which the first transparent electrode 16 is formed;

5310、 在形成有第二飩化层 17的基板表面形成第二透明电极 18。 采用上述的这样一种阵列基板的制造方法， 所形成的光阻结构 21 具体是由第一飩化层 15和第一透明电极 16形成的光反射结构， 这样 一来， 通过改变现有层级结构位于过孔 20处的形状即可实现光阻结构 的设计， 从而无需额外设置新的层级， 有效保证了显示装置的厚度。 5310. A second transparent electrode 18 is formed on the surface of the substrate on which the second deuterated layer 17 is formed. According to the manufacturing method of the array substrate as described above, the photoresist structure 21 is specifically a light reflection structure formed by the first deuteration layer 15 and the first transparent electrode 16, so that the existing hierarchical structure is changed. The shape of the via structure can be realized by the shape of the via hole 20, so that no additional layer is required, and the thickness of the display device is effectively ensured.

参照图 10并结合图 5所示， 根据本发明第九实施例的阵列基板的 制造方法包括：  Referring to FIG. 10 and in conjunction with FIG. 5, a method of fabricating an array substrate according to a ninth embodiment of the present invention includes:

5401、 在透明基板 11 的表面通过构图工艺形成 TFT 的栅极 120 的图案；  5401, forming a pattern of the gate electrode 120 of the TFT by a patterning process on a surface of the transparent substrate 11;

5402、 在 TFT的栅极 120的表面覆盖栅极绝缘层 13;  5402, covering the surface of the gate 120 of the TFT with the gate insulating layer 13;

5403、 在栅极绝缘层 13的表面对应 TFT 12的沟道位置处采用隔 离技术 （lift-out ) 形成半导体有源层 14, 该半导体有源层为金属氧化 物 （IGZO ) ；  5403, forming a semiconductor active layer 14 by using a lift-out at a surface of the gate insulating layer 13 corresponding to the channel position of the TFT 12; the semiconductor active layer is a metal oxide (IGZO);

5404、在半导体有源层 14的表面形成 TFT的源极 122和漏极 121 , 该步骤结束后， 完成了对 TFT 12的制作；  5404, forming a source 122 and a drain 121 of the TFT on the surface of the semiconductor active layer 14. After the step is completed, the fabrication of the TFT 12 is completed;

5405、 在形成有 TFT 12的基板表面形成第一飩化层 15的图案；5405, forming a pattern of the first deuterated layer 15 on the surface of the substrate on which the TFT 12 is formed;

5406、 在形成有上述图案的基板表面通过构图工艺形成过孔 20的 图案； 5407、 在形成有上述图案的基板表面形成第一透明电极 16, 第一 透明电极 16通过该过孔 20与 TFT的漏极 121相连接； 5406, forming a pattern of the via holes 20 by a patterning process on a surface of the substrate on which the above pattern is formed; 5407, forming a first transparent electrode 16 on a surface of the substrate on which the pattern is formed, and the first transparent electrode 16 is connected to the drain 121 of the TFT through the via 20;

5408、 在形成有上述过孔 20的相应位置通过一次构图工艺制作遮 光层 22;  5408, forming a light shielding layer 22 by a patterning process at a corresponding position where the via hole 20 is formed;

5409、 在形成有上述结构的基板表面形成第二飩化层 17; 以及 5409, forming a second deuterated layer 17 on a surface of the substrate on which the above structure is formed;

5410、 在形成有第二飩化层 17的基板表面形成第二透明电极 18。 需要说明的是， 以上仅仅是通过图 9和图 10所示的阵列基板的制 造方法的流程图对图 2和图 5所示的阵列基板的制作过程进行举例说 明，其他具有光阻结构 21的阵列基板的制作过程在这里不再——赘述， 但都应当属于本发明的保护范围。 以上所述， 仅为本发明的具体实施方式， 但本发明的保护范围并 不局限于此， 任何熟悉本技术领域的技术人员在本发明揭露的技术范 围内， 可轻易想到变化或替换， 都应涵盖在本发明的保护范围之内。 因此， 本发明的保护范围应以所述权利要求的保护范围为准。 5410. A second transparent electrode 18 is formed on the surface of the substrate on which the second deuterated layer 17 is formed. It should be noted that the above is only a flowchart of the manufacturing method of the array substrate shown in FIG. 2 and FIG. 5 through the flowchart of the manufacturing method of the array substrate shown in FIG. 9 and FIG. 10 , and other photoresist structures 21 are provided. The fabrication process of the array substrate is not repeated here, but it should all fall within the scope of protection of the present invention. The above is only the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of changes or substitutions within the technical scope of the present invention. It should be covered by the scope of the present invention. Therefore, the scope of the invention should be determined by the scope of the appended claims.

Claims

权 利 要 求 书 Claim 1、 一种阵列基板， 包括： 透明基板、 位于所述透明基板上的 TFT、 覆盖所述 TFT的第一飩化层、 以及位于所述第一飩化层的表面且通过 过孔与所述 TFT的漏极相连接的第一透明电极， 其特征在于， 所述过 孔处具有用于防止光线透射的光阻结构。 What is claimed is: 1. An array substrate, comprising: a transparent substrate, a TFT on the transparent substrate, a first deuterated layer covering the TFT, and a surface on the first deuterated layer and passing through the via and the A first transparent electrode to which a drain of the TFT is connected is characterized in that the via hole has a photoresist structure for preventing transmission of light. 2、 根据权利要求 1所述的阵列基板， 其特征在于， 所述光阻结构 包括具有连续的多个斜面或者曲面的微结构。 2. The array substrate according to claim 1, wherein the photoresist structure comprises a microstructure having a plurality of continuous bevels or curved surfaces. 3、 根据权利要求 2所述的阵列基板， 其特征在于， 位于所述过孔 处的所述第一飩化层具有所述微结构， 所述第一飩化层的表面形成具 有所述微结构的所述第一透明电极。 The array substrate according to claim 2, wherein the first deuterated layer at the via has the microstructure, and the surface of the first deuterated layer is formed to have the micro The first transparent electrode of the structure. 4、 根据权利要求 2所述的阵列基板， 其特征在于， 位于所述过孔 处的所述 TFT的漏极具有所述微结构， 所述 TFT的漏极的表面形成具 有所述微结构的所述第一透明电极。 The array substrate according to claim 2, wherein a drain of the TFT located at the via has the microstructure, and a surface of a drain of the TFT is formed to have the microstructure The first transparent electrode. 5、 根据权利要求 2所述的阵列基板， 其特征在于， 位于所述过孔 处的所述第一飩化层与所述透明基板之间的栅极绝缘层具有所述微结 构， 所述栅极绝缘层的表面形成具有所述微结构的第一透明电极。 The array substrate according to claim 2, wherein a gate insulating layer between the first deuterated layer and the transparent substrate at the via has the microstructure, A surface of the gate insulating layer forms a first transparent electrode having the microstructure. 6、 根据权利要求 1或 2所述的阵列基板， 还包括形成于第一透明 电极表面上的第二飩化层， 以及所述光阻结构包括位于所述第一透明 电极与所述第二飩化层之间的遮光层。 The array substrate according to claim 1 or 2, further comprising a second deuterated layer formed on the surface of the first transparent electrode, and the photoresist structure comprises the first transparent electrode and the second A light-shielding layer between the layers. 7、 一种显示装置， 其特征在于， 包括如权利要求 1-6任一所述的 阵列基板。 A display device, comprising the array substrate according to any one of claims 1-6. 8、 一种阵列基板的制造方法， 包括步骤： 8. A method of fabricating an array substrate, comprising the steps of: 在形成有 TFT的基板表面形成第一飩化层的图案；  Forming a pattern of the first deuterated layer on the surface of the substrate on which the TFT is formed; 在形成有第一飩化层的图案的基板表面通过构图工艺形成过孔的 图案， 所述过孔用于连接将要形成在所述第一飩化层的表面的第一透 明电极和所述 TFT的漏极； 以及 Forming a via hole by a patterning process on the surface of the substrate on which the pattern of the first deuterated layer is formed a via for connecting a first transparent electrode to be formed on a surface of the first deuterated layer and a drain of the TFT; 在所述过孔位置处形成用于防止光线透射的光阻结构。  A photoresist structure for preventing light transmission is formed at the via position. 9、 根据权利要求 8所述的方法， 其特征在于， 在所述过孔位置处 形成用于防止光线透射的光阻结构的步骤包括： 9. The method according to claim 8, wherein the step of forming a photoresist structure for preventing light transmission at the via position comprises: 在所述过孔处通过构图工艺形成表面具有连续的多个斜面或者曲 面的微结构的光阻结构。  A photoresist structure having a microstructure having a plurality of continuous slopes or curved surfaces on the surface is formed by the patterning process at the via holes. 10、 根据权利要求 9 所述的方法， 其特征在于， 在所述过孔处通 过构图工艺形成表面具有连续的多个斜面或者曲面的微结构的光阻结 构的步骤包括在所述过孔处的所述第一飩化层的表面上形成所述微结 构以及在所述第一飩化层的表面形成具有所述微结构的所述第一透明 电极。 10. The method according to claim 9, wherein the step of forming a photoresist structure having a plurality of continuous bevels or curved surfaces on the surface by the patterning process at the via hole is included at the via hole Forming the microstructure on a surface of the first deuterated layer and forming the first transparent electrode having the microstructure on a surface of the first deuterated layer. 11、 根据权利要求 9 所述的方法， 其特征在于， 在所述过孔处通 过构图工艺形成表面具有连续的多个斜面或者曲面的微结构的光阻结 构的步骤包括在位于所述过孔处的所述 TFT的漏极的表面上形成所述 微结构以及在所述 TFT的漏极的表面形成具有所述微结构的所述第一 透明电极。 11. The method according to claim 9, wherein the step of forming a photoresist structure having a plurality of continuous bevels or curved surfaces on the surface by the patterning process at the via hole comprises: The microstructure is formed on a surface of a drain of the TFT and a first transparent electrode having the microstructure is formed on a surface of a drain of the TFT. 12、 根据权利要求 9 所述的方法， 其特征在于， 在所述过孔处通 过构图工艺形成表面具有连续的多个斜面或者曲面的微结构的光阻结 构的步骤包括在位于所述过孔处的所述第一飩化层与所述透明基板之 间的栅极绝缘层的表面上形成所述微结构以及在所述栅极绝缘层的表 面形成具有所述微结构的第一透明电极。 12. The method according to claim 9, wherein the step of forming a photoresist structure having a plurality of continuous bevels or curved surfaces on the surface by the patterning process at the via hole comprises: being located in the via hole Forming the microstructure on a surface of a gate insulating layer between the first deuterated layer and the transparent substrate, and forming a first transparent electrode having the microstructure on a surface of the gate insulating layer . 13、 根据权利要求 9至 12中的任一所述的方法， 还包括在第一透 明电极上过孔位置处形成遮光层。 13. A method according to any one of claims 9 to 12, further comprising forming a light shielding layer at the location of the vias on the first transparent electrode. 14、 根据权利要求 8 所述的方法， 还包括在形成有过孔的图案的 基板表面上形成第一透明电极， 并且在所述过孔位置处形成用于防止 光线透射的光阻结构的步骤包括在第一透明电极表面上所述过孔位置 处形成遮光层。 14. The method according to claim 8, further comprising forming a first transparent electrode on a surface of the substrate on which the pattern of via holes is formed, and forming at the position of the via hole for preventing The step of light transmitting the photoresist structure includes forming a light shielding layer at the via location on the surface of the first transparent electrode.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103346159B (en) * 2013-06-28 2016-08-31 北京京东方光电科技有限公司 A kind of array base palte and manufacture method, display device
CN103985717A (en) 2014-05-13 2014-08-13 京东方科技集团股份有限公司 Array substrate, manufacturing method of array substrate, and display device
TWI553881B (en) * 2014-06-06 2016-10-11 群創光電股份有限公司 Thin film transistor substrate
CN104777650B (en) * 2015-04-22 2018-10-30 京东方科技集团股份有限公司 Tft array substrate, its production method, liquid crystal display panel and display device
CN105655391B (en) * 2016-01-28 2018-10-26 武汉华星光电技术有限公司 Tft array substrate and preparation method thereof
CN110438472B (en) * 2019-06-27 2021-08-31 惠科股份有限公司 Manufacturing method of indium gallium zinc oxide thin film, thin film transistor and display panel

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060250536A1 (en) * 2005-05-06 2006-11-09 Samsung Electronics Co., Ltd Thin film transistor panel, liquit crystal display having the same and method of manufacturing the thin film transistor panel
CN101562189A (en) * 2008-04-15 2009-10-21 三星电子株式会社 Thin film transistor array panel and method for manufacturing the same
CN101819362A (en) * 2009-02-27 2010-09-01 北京京东方光电科技有限公司 TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and manufacture method thereof
CN102236230A (en) * 2010-05-05 2011-11-09 乐金显示有限公司 Array substrate for reflective type or transflective type liquid crystal display device and method of fabricating the same
CN103346159A (en) * 2013-06-28 2013-10-09 北京京东方光电科技有限公司 Array substrate, manufacturing method thereof and display device thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070001647A (en) * 2005-06-29 2007-01-04 엘지.필립스 엘시디 주식회사 Reflective Liquid Crystal Display and Manufacturing Method Thereof
KR20070111029A (en) * 2006-05-16 2007-11-21 삼성전자주식회사 Thin film transistor substrate and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060250536A1 (en) * 2005-05-06 2006-11-09 Samsung Electronics Co., Ltd Thin film transistor panel, liquit crystal display having the same and method of manufacturing the thin film transistor panel
CN101562189A (en) * 2008-04-15 2009-10-21 三星电子株式会社 Thin film transistor array panel and method for manufacturing the same
CN101819362A (en) * 2009-02-27 2010-09-01 北京京东方光电科技有限公司 TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and manufacture method thereof
CN102236230A (en) * 2010-05-05 2011-11-09 乐金显示有限公司 Array substrate for reflective type or transflective type liquid crystal display device and method of fabricating the same
CN103346159A (en) * 2013-06-28 2013-10-09 北京京东方光电科技有限公司 Array substrate, manufacturing method thereof and display device thereof

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