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WO2014112500A1 - Élément de conversion photoélectrique et procédé de fabrication d'élément de conversion photoélectrique - Google Patents

Élément de conversion photoélectrique et procédé de fabrication d'élément de conversion photoélectrique Download PDF

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Publication number
WO2014112500A1
WO2014112500A1 PCT/JP2014/050519 JP2014050519W WO2014112500A1 WO 2014112500 A1 WO2014112500 A1 WO 2014112500A1 JP 2014050519 W JP2014050519 W JP 2014050519W WO 2014112500 A1 WO2014112500 A1 WO 2014112500A1
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Prior art keywords
photoelectric conversion
amorphous
amorphous film
film
conversion element
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English (en)
Japanese (ja)
Inventor
東　賢一
直城 小出
山元　良高
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Sharp Corp
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Sharp Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a photoelectric conversion element and a method for manufacturing the photoelectric conversion element.
  • the solar cells currently manufactured and sold most often have a structure in which electrodes are formed on a light receiving surface which is a surface on which sunlight is incident and a back surface which is the opposite side of the light receiving surface.
  • a light receiving surface which is a surface on which sunlight is incident
  • a back surface which is the opposite side of the light receiving surface.
  • an i-type amorphous silicon film and a p-type amorphous silicon film are formed on the back surface of an n-type single crystal silicon substrate.
  • a laminate composed of an i-type amorphous silicon film and an n-type amorphous silicon film, and the p-type amorphous silicon film of these laminates and n Development of a solar cell (heterojunction back contact cell) in which an electrode is formed on a type of amorphous silicon film to improve its characteristics is in progress.
  • the heterojunction back contact cell forms both n-type and p-type stacked structures on one surface of a semiconductor substrate as described above, it is necessary to form a complicated pattern in the manufacturing process.
  • the lift-off method is often used for such pattern formation.
  • the lift-off method is a method in which a mask layer is patterned on a substrate, an upper layer made of silicon, metal, or the like is formed thereon, and then the lower layer mask layer is peeled off to leave an upper layer of a target pattern. It is.
  • the lift-off method is a useful method for fine pattern formation, but it is necessary to infiltrate the stripping solution into the lower mask layer while the mask layer is covered with the upper layer. Had.
  • the mask layer is peeled in a state where the peeling solution is not sufficiently permeated, there may be a disadvantage that the upper layer is torn off and burrs are generated.
  • a laminated film composed of, for example, an i-type amorphous film and a p-type amorphous film may be formed as an upper layer.
  • the length of the steel has a great influence on the production efficiency, which in turn contributes to an increase in manufacturing costs.
  • the demand for solar cells continues to expand, and the reduction of manufacturing costs is becoming increasingly important.
  • the market demand for improving the conversion efficiency of solar cells is still strong.
  • the present invention has been made in view of the above situation, and an object of the present invention is to provide a photoelectric conversion element that can be manufactured at low cost and has high conversion efficiency.
  • the inventors of the present invention have made extensive studies in order to solve the above problems, and by performing specific processing on the upper layer to be removed by the lift-off method, the permeability of the stripping solution is improved and the overall production efficiency is improved.
  • the present invention has been completed by obtaining the knowledge that the conversion efficiency of the photoelectric conversion element is changed by the processing, and by further studying based on these findings.
  • the photoelectric conversion element of the embodiment of the present invention includes a first conductivity type semiconductor substrate, a first conductivity type first amorphous film provided on one surface of the semiconductor substrate, and the surface. And a second conductive type second amorphous film provided independently from the first amorphous film, the second amorphous film comprising an amorphous region and a crystal
  • the crystalline region is characterized in that the value of the output current in the induced current measurement by laser light or electrons is relatively larger than that of the amorphous region.
  • the large value of the output current in the induced current measurement indicates that the crystalline region has a higher concentration of electrically activated dopant and a lower electric resistance than the amorphous region.
  • the factor is high.
  • the crystalline region having such properties has an effective carrier lifetime measured by the ⁇ -PCD (Microwave Photo-conductivity Decay) method is longer than that of the amorphous region, and is measured by the Implemented Voc method. It also has a feature that the carrier lifetime and the surface recombination rate are slower than those of the amorphous region.
  • the crystalline region and the amorphous region can be distinguished by using the ⁇ -PCD method or the Implemented Voc method instead of the induced current measurement, and the existence of the crystalline region can be confirmed.
  • the crystalline region is preferably a substantially circular region having a diameter of 0.1 ⁇ m to 50 ⁇ m on the surface of the second amorphous film.
  • the diameter is more preferably 30 ⁇ m or more and 50 ⁇ m or less.
  • a plurality of the crystalline regions are arranged at substantially equal intervals on the surface of the second amorphous film.
  • the crystalline region is preferably a region having a scattering intensity in the vicinity of 520 cm ⁇ 1 in the Raman spectroscopic spectrum larger than that of the amorphous region. Note that the scattering intensity near 520 cm ⁇ 1 in the Raman spectroscopic spectrum indicates the scattering intensity unique to crystalline silicon.
  • the crystalline region is preferably formed by performing laser annealing on the amorphous region.
  • the first conductivity type is preferably an n-type conductivity type
  • the second conductivity type is preferably a p-type conductivity type.
  • the present invention also relates to a method for manufacturing the photoelectric conversion element, wherein the manufacturing method forms a second conductive type second amorphous film on the entire surface of one surface of the first conductive type semiconductor substrate.
  • a step of exposing the semiconductor substrate by removing a part of the second amorphous film, a step of forming a mask layer on the second amorphous film, and the semiconductor substrate Forming a first conductive type first amorphous film on the exposed surface and the mask layer, and forming a through hole in the first amorphous film formed on the mask layer
  • a step of exposing the second amorphous film by removing a part of the mask layer and the first amorphous film is a method for manufacturing the photoelectric conversion element, wherein the manufacturing method forms a second conductive type second amorphous film on the entire surface of one surface of the first conductive type semiconductor substrate.
  • the step of forming the through hole is preferably a step of forming a plurality of through holes, and the through hole preferably has a hole diameter of 0.1 ⁇ m or more and 50 ⁇ m or less.
  • the hole diameter of the through hole is more preferably 30 ⁇ m or more and 50 ⁇ m or less.
  • the step of forming the through hole is a step of forming a through hole by laser processing, and is a step of performing laser processing under the conditions of a wavelength of 600 nm or less and a pulse width of 1 ns to 100 ns.
  • a more preferable range of the pulse width is 10 ns to 100 ns.
  • laser processing include a processing method called laser ablation. This laser ablation involves irradiating a solid surface such as an inorganic substance, organic substance or metal with a high-intensity, short pulse and short wavelength laser, accompanied by evaporation due to absorbed heat generated during laser irradiation, plasma emission, impact sound, etc. A method of explosively peeling the solid surface phase.
  • the step of forming the through hole may be a step of forming the through hole and accompanied by crystallization of the second amorphous film by an annealing effect of the laser.
  • the step of forming the through hole includes a step of applying a photoresist on the first amorphous film, and the step of forming the through hole by performing photolithography on the photoresist. May be.
  • the step of exposing the second amorphous film may be a step of removing the first amorphous film by performing lift-off after removing the mask layer by performing wet etching. preferable.
  • the photoelectric conversion element of the present invention can be manufactured at low cost and exhibits high conversion efficiency.
  • FIG. 1 is a schematic cross-sectional view of the photoelectric conversion element of the embodiment.
  • a first non-doped film 7 made of i-type amorphous silicon is provided on one surface (hereinafter also referred to as “back surface”) of an n-type semiconductor substrate 1.
  • a first amorphous film 8 made of n-type amorphous silicon is formed on the non-doped film 7, a first amorphous film 8 made of n-type amorphous silicon is formed.
  • a second non-doped film 5 made of i-type amorphous silicon is provided on the same surface, and a second amorphous film 6 made of p-type amorphous silicon is formed on the second non-doped film 5. Is formed independently of the first amorphous film 8.
  • the first electrode 9 is provided on the first amorphous film 8, and the second electrode 10 is provided on the second amorphous film 6.
  • FIG. 2 is a schematic perspective view of a part of the photoelectric conversion element of the embodiment.
  • the first electrode 9 and the second electrode 10 are not shown.
  • the second amorphous film 6 includes an amorphous region 61 and a crystalline region 62, and the crystalline region 62 has an amorphous output current value measured in the induced current measurement.
  • the region 61 is larger than the region 61.
  • the induced current measurement is typically laser light induced current measurement (Leser Beam Induced Current measurement (hereinafter also referred to as “LBIC measurement”)) or electron induced current measurement (Electron Beam Induced Current measurement (hereinafter referred to as “EBIC”). It is also referred to as “measurement”))].
  • LBIC measurement Laser Beam Induced Current measurement
  • EBIC Electro Beam Induced Current measurement
  • a method for indirectly evaluating the recombination velocity of the surface region that is, carrier lifetime measurement or Implemented Voc measurement is performed to distinguish the crystalline region from the amorphous region. good.
  • a texture structure is formed on the entire surface of the light receiving surface (the surface opposite to the back surface) which is the other surface of the semiconductor substrate 1.
  • a third non-doped film 2 made of i-type amorphous silicon is provided on the entire light-receiving surface of the semiconductor substrate 1, and a third non-doped film made of n-type amorphous silicon is formed on the third non-doped film 2.
  • An amorphous film 3 is provided. Further, an antireflection film 4 is provided on the third amorphous film 3.
  • i-type means that n-type or p-type impurities are not intentionally doped.
  • n-type or p-type impurities are inevitable after the photoelectric conversion element is manufactured.
  • N-type or p-type conductivity may be exhibited by, for example, diffusion.
  • amorphous silicon includes those in which dangling bonds of silicon atoms such as hydrogenated amorphous silicon are terminated with hydrogen.
  • the second amorphous film 6 made of p-type amorphous silicon includes an amorphous region 61 and a crystalline region 62.
  • the crystalline region indicates that crystallization is advanced (that is, the crystallinity is high) as compared with the amorphous region, and does not necessarily indicate a region made of completely crystalline. .
  • the second amorphous film 6 is not limited to a film made of p-type amorphous silicon.
  • a conventionally known p-type amorphous semiconductor film may be used.
  • the thickness of the second amorphous film 6 is not particularly limited, but can be, for example, 5 nm or more and 10 nm or less.
  • boron can be used, and the concentration thereof can be set to about 5 ⁇ 10 19 / cm 3 , for example.
  • the shape of the crystalline region 62 is not particularly limited, but is preferably, for example, substantially circular, and in the case of a circular shape, the diameter of the circle is preferably 30 ⁇ m or more and 50 ⁇ m or less. It is preferable that a plurality of crystalline regions 62 are arranged on the surface of the second amorphous film 6 at substantially equal intervals. When a plurality of crystalline regions 62 are arranged, the interval (pitch) between the crystalline regions 62 is preferably 50 ⁇ m or more and 500 ⁇ m or less. On the surface of the second amorphous film 6, the total area of the crystalline regions 62 is preferably 1% or more and 40% or less with respect to the cell area. By adjusting the shape, arrangement, and area of the crystalline region 62 as described above, the effects of the present invention can be obtained more efficiently.
  • the crystalline region 62 may extend in the thickness direction of the second amorphous film 6. In this case, it is preferable that everything from the surface of the second amorphous film 6 to the second non-doped film 5 is crystallized, but the second non-doped film of the second amorphous film 6 is preferably crystallized. A part of the region close to 5 may remain amorphous, and even if a part remains amorphous, the effect of the present invention is exhibited.
  • the value of the output current measured in the LBIC measurement or the EBIC measurement is large because, among the p-type impurities (dopants) contained in the crystalline region 62, the electrically activated dopant The concentration of is high. In other words, the hole concentration is higher in the crystalline region 62 than in the amorphous region 61. Thereby, the photoelectric conversion element of this embodiment exhibits the outstanding effect of showing high conversion efficiency.
  • the LBIC measurement can be performed using a conventionally known apparatus equipped with a scannable excitation laser and a measurement function capable of measuring the excited current.
  • a lifetime measuring apparatus product name “WT2000”, manufactured by Semilab. This apparatus is preferable because it can also measure the carrier lifetime by the ⁇ -PCD method.
  • the crystalline region 62 having the above-described characteristics can be formed by irradiating the amorphous region 61 with a laser under specific conditions (that is, performing laser ablation), as will be described later.
  • the amorphous region 61 and the crystalline region 62 can be distinguished by Raman spectroscopy. That is, in the Raman spectroscopic spectrum, the crystalline region 62 has a feature that the scattering intensity in the vicinity of 520 cm ⁇ 1, which is a Raman shift amount derived from the bond between silicon (Si) atoms, is larger than that of the amorphous region 61.
  • the Raman spectroscopic spectrum can be measured using a conventionally known microscopic laser Raman spectroscopic device. Examples of such a device include a laser Raman spectrophotometer (product name “NRS-5000 / 7000 series”, JASCO). And the like). For the measurement, for example, a green excitation laser having a wavelength of 532 nm can be used.
  • the crystalline region 62 is compared with the amorphous region 61 having a peak in the vicinity of 480 cm ⁇ 1, which is the Raman shift amount inherent to amorphous silicon. It indicates that the crystallinity is high.
  • the semiconductor substrate 1 is not limited to a substrate made of n-type single crystal silicon.
  • a conventionally known semiconductor substrate may be used.
  • the texture structure of the light receiving surface of the semiconductor substrate 1 can be formed by, for example, texture etching the entire surface of the light receiving surface of the semiconductor substrate 1.
  • the thickness of the semiconductor substrate 1 is not particularly limited, but may be, for example, 20 ⁇ m or more and 300 ⁇ m or less, and preferably 60 ⁇ m or more and 200 ⁇ m or less.
  • the specific resistance of the semiconductor substrate 1 is not particularly limited, but may be, for example, 0.1 ⁇ ⁇ cm to 10 ⁇ ⁇ cm.
  • the first non-doped film 7, the second non-doped film 5, and the third non-doped film 2 are not limited to films made of i-type amorphous silicon.
  • a conventionally known i-type amorphous semiconductor film is used. Also good.
  • the thickness of each non-doped film is not particularly limited, but can be, for example, 1 nm or more and 20 nm or less.
  • the first amorphous film 8 and the third amorphous film 3 are not limited to films made of n-type amorphous silicon.
  • a conventionally known n-type amorphous semiconductor film may be used.
  • the thickness of the 1st amorphous film 8 and the 3rd amorphous film 3 is not specifically limited, For example, they are 1 nm or more and 20 nm or less.
  • the n-type impurity contained in the first amorphous film 8 and the third amorphous film 3 for example, phosphorus can be used, and the first amorphous film 8 and the third amorphous film can be used.
  • the n-type impurity concentration of the mass film 3 can be set to about 5 ⁇ 10 18 pieces / cm 3 , for example.
  • Antireflection film As the antireflection film 4, for example, a silicon nitride film can be used, and the film thickness of the antireflection film 4 can be, for example, about 80 nm to 120 nm, although it depends on the refractive index.
  • the first electrode 9 and the second electrode 10 are not particularly limited, and include, for example, a conductive oxide film such as ITO (Indium Tin Oxide) or zinc oxide (ZnO), and aluminum, silver, or a metal thereof, and titanium. Or what laminated
  • a conductive oxide film such as ITO (Indium Tin Oxide) or zinc oxide (ZnO)
  • ITO Indium Tin Oxide
  • ZnO zinc oxide
  • stacked with the metal laminated film containing palladium as a stress relaxation layer can be used.
  • the thicknesses of the first electrode 9 and the second electrode 10 are not particularly limited.
  • the thickness of the first electrode 9 can be 0.1 ⁇ m or less, and the thickness of the second electrode 10 can be 5 ⁇ m or less.
  • the photoelectric conversion element of such an embodiment is manufactured by the following manufacturing method.
  • the photoelectric conversion element manufactured by the following manufacturing method exhibits the above characteristics. Therefore, the photoelectric conversion element of the embodiment has an excellent effect that it can be manufactured at low cost and exhibits high conversion efficiency.
  • a third non-doped film 2 made of i-type amorphous silicon and a third amorphous film made of n-type amorphous silicon are formed on the light-receiving surface of the semiconductor substrate 1 on which the texture structure is formed.
  • the material film 3 is laminated in this order, for example, by a plasma CVD (Chemical Vapor Deposition) method.
  • an antireflection film 4 is laminated on the entire surface of the third amorphous film 3 by, for example, a sputtering method or a plasma CVD method.
  • a second non-doped film 5 made of i-type amorphous silicon and a second amorphous film 6 made of p-type amorphous silicon are laminated in this order, for example, by plasma CVD. To do.
  • an acid-resistant resist film 11 is formed on a part of the second amorphous film 6.
  • the resist film 11 is a resist capable of suppressing etching using an acidic solution described later, and a conventionally known one can be used without any particular limitation.
  • the installation method of the resist film 11 is not particularly limited. However, when the resist film 11 is made of an acid-resistant resist, for example, after the resist film 11 is applied to the entire back surface of the second amorphous film 6, By patterning the resist film 11 by lithography and etching techniques, the resist film 11 can be formed on a part of the back surface of the second amorphous film 6.
  • FIG. 7 shows a state in which the back surface of the semiconductor substrate 1 is exposed by removing the second non-doped film 5, but the second non-doped film 5 is formed on the back surface of the semiconductor substrate 1.
  • a part may be left (not shown), that is, the semiconductor substrate 1 does not necessarily have to be completely exposed after this operation.
  • the removal of the second amorphous film 6 and the second non-doped film 5 is preferably performed by, for example, wet etching using an acidic solution. Since the acidic solution has a very high etching rate with respect to a p-type amorphous film such as p-type amorphous silicon, the second amorphous film 6 can be efficiently removed.
  • an acidic solution for example, a mixed solution of hydrofluoric acid and hydrogen peroxide water, a mixed solution of hydrofluoric acid and ozone water, or hydrofluoric acid containing microbubbles can be used.
  • hydrofluoric acid or the like can be suitably used as the acidic solution.
  • the removal of the second amorphous film 6 and the second non-doped film 5 is preferably performed by wet etching using an alkaline solution, for example.
  • an alkaline solution an aqueous solution of sodium or potassium hydroxide or borate can be used.
  • a mask layer 13 is formed on the entire back surface of the semiconductor substrate 1 as shown in FIG.
  • a metal oxide such as ITO or aluminum or a metal
  • the thickness can be 50 nm or more and 200 nm or less when a metal oxide such as ITO is used, and can be 300 nm or more and 3 ⁇ m or less when a metal such as aluminum is used.
  • the mask layer 13 can be formed by, for example, a sputtering method or a plasma CVD method.
  • an acid-resistant resist film 12 is formed on a part of the mask layer 13.
  • the acid-resistant resist film 12 is a resist capable of suppressing etching using an acidic solution, and a conventionally known one can be used without any particular limitation.
  • the method for removing the mask layer 13 is preferably wet etching using an acidic solution.
  • the acidic solution is not particularly limited, and for example, a mixed solution of hydrofluoric acid and hydrogen peroxide solution exemplified above can be used.
  • the first non-doped film 7 and the first amorphous film 8 are formed on the entire back surface of the semiconductor substrate 1 as shown in FIG. Are laminated by, for example, a plasma CVD method.
  • through holes 14 are formed in the first amorphous film 8 and the first non-doped film 7 formed on the mask layer 13.
  • the through hole 14 passes through the first amorphous film 8 and the first non-doped film 7 and reaches the interface between the first non-doped film 7 and the mask layer 13.
  • the through hole 14 may reach the inside of the mask layer 13, but preferably does not penetrate the mask layer 13.
  • the plurality of through-holes 14 are preferably arranged at substantially equal intervals, and the interval (pitch) is preferably 50 ⁇ m or more and 500 ⁇ m or less. Moreover, it is suitable that the hole diameter of the through-hole 14 shall be 30 micrometers or more and 50 micrometers or less. Furthermore, the number of through-holes is preferably such that, for example, the sum of the cross-sectional areas of the through-holes 14 is 1% or more and 40% or less with respect to the cell area.
  • the through hole 14 preferably has a substantially circular cross-sectional shape.
  • the hole diameter may not be constant over the entire area of the through hole 14.
  • the hole diameter on the surface of the first amorphous film 8 and the hole diameter on the surface where the first non-doped film 7 is in contact with the mask layer 13 are different. It may be different.
  • the manufacturing method of the present embodiment has an excellent effect that the penetration of the stripping solution is promoted by providing the through holes 14 as described above, and the processing time in the lift-off method can be shortened.
  • the through hole 14 it is preferable to employ laser processing.
  • laser processing not only the through holes 14 can be formed, but also the second amorphous film 6 can be subjected to laser annealing.
  • laser annealing is performed simultaneously with the formation of the through hole 14, but laser annealing is performed by irradiating the laser again after the through hole 14 is formed. Also good.
  • the p-type impurities in the second amorphous film 6 can be activated.
  • the photoelectric conversion element of this embodiment can achieve high conversion efficiency by activating p-type impurities.
  • the laser conditions for forming the through hole 14 and activating the p-type impurity in the second amorphous film 6 include a wavelength of 600 nm or less and a pulse width of 1 ns to 100 ns. It is preferable to employ certain conditions.
  • the pulse width is more preferably 10 ns or more and 100 ns or less.
  • the laser wavelength of 600 nm or less for example, wavelengths of 530 nm, 350 nm, and 270 nm can be employed.
  • the wavelength exceeds 600 nm, it is not preferable because the laser beam tends to penetrate deep into the second amorphous film 6.
  • the pulse width is less than 1.0 ns, the processing time is excessive. It tends to be long and is not preferable.
  • the pulse width exceeds 100 ns, the thermal damage received by the second amorphous film 6 tends to become excessively large, which is not preferable.
  • Amorphous silicon constituting the second amorphous film 6 has a higher light absorption coefficient than crystalline silicon, and is easily damaged by laser annealing. Therefore, usually, when laser annealing is performed on amorphous silicon, it is necessary to remove the damaged layer.
  • the manufacturing method of the present embodiment employs the method of performing laser annealing on the second amorphous film 6 through the mask layer 13 as described above, so that no damage layer is generated under the above conditions, and p The type impurity can be activated.
  • the through hole 14 may be formed by patterning using a photolithography technique and an etching technique. Also in this case, the penetration of the stripping solution is promoted in the same manner as described above.
  • the stripping solution may be any solution that can etch the mask layer, and a conventionally known stripping solution can be used without particular limitation.
  • a stripping solution for example, a mixed solution of hydrofluoric acid and hydrogen peroxide solution exemplified above can be used.
  • the first amorphous film 8 and the first non-doped film 7 on the second amorphous film 6 are formed by a lift-off method.
  • the second amorphous film 6 is exposed by removing.
  • the first electrode 9 in which ITO and aluminum are laminated in this order and the second electrode 10 is formed by, for example, a sputtering method or a CVD method.
  • the photoelectric conversion element of the embodiment having the structure shown in FIG. 1 can be manufactured.
  • the photoelectric conversion element of the embodiment can be manufactured at low cost because the processing time in the lift-off method is shortened and no burrs are generated due to lift-off. Furthermore, when laser annealing or laser ablation is performed on a p-type amorphous film, p-type impurities can be activated, and thus high photoelectric conversion efficiency is exhibited.
  • the photoelectric conversion element of this embodiment includes a first conductive type semiconductor substrate 1, a first conductive type first amorphous film 8 provided on one surface of the semiconductor substrate 1, and a surface of the first conductive type semiconductor substrate 1.
  • the crystalline region 62 is characterized in that the value of the output current in the induced current measurement is larger than that of the amorphous region 61.
  • the photoelectric conversion element of the present embodiment having the above configuration is excellent in that the conversion efficiency is remarkably improved by having a region where the crystallinity is locally high and the impurity is activated in the amorphous film. Show the effect.
  • the crystalline region 62 is preferably a substantially circular region having a diameter of 0.1 ⁇ m to 50 ⁇ m on the surface of the second amorphous film 6. Further, it is preferable that a plurality of crystalline regions 62 are arranged at substantially equal intervals on the surface of the second amorphous film 6. By forming the crystalline region 62 in this way, the above effect can be further enhanced.
  • the crystalline region 62 is preferably a region where the scattering intensity in the vicinity of 520 cm ⁇ 1 in the Raman spectrum is larger than that of the amorphous region 61.
  • the crystalline region 62 is preferably formed by performing laser annealing on the amorphous region 61.
  • Laser annealing is a particularly suitable method for realizing the preferable shape, size and arrangement of the crystalline region 62 described above.
  • the first conductivity type is preferably an n-type conductivity type
  • the second conductivity type is preferably a p-type conductivity type. Since the p-type amorphous film includes the amorphous region 61 and the crystalline region 62, the effect of the present invention becomes more remarkable.
  • the method for manufacturing a photoelectric conversion element includes a step of forming a second conductive type second amorphous film 6 on the entire surface of one surface of the first conductive type semiconductor substrate 1, A step of exposing the semiconductor substrate 1 by removing a part of the amorphous film 6, a step of forming a mask layer 13 on the second amorphous film 6, and the exposed surface of the semiconductor substrate 1. And a step of forming a first conductive type first amorphous film 8 on the mask layer 13 and a step of forming a through hole 14 in the first amorphous film 8 formed on the mask layer 13. And exposing the second amorphous film 6 by removing a part of the mask layer 13 and the first amorphous film 8.
  • the manufacturing method of this embodiment including such a process, by providing the through-hole 14, the penetration of the stripping solution is promoted, the processing time in the lift-off method can be shortened, and the generation of burrs associated with the lift-off is generated. The excellent effect of suppressing is shown. Therefore, by using the manufacturing method of this embodiment, a high-quality photoelectric conversion element can be manufactured at low cost.
  • the step of forming the through hole 14 is preferably a step of forming a plurality of through holes, and the through hole 14 preferably has a hole diameter of 0.1 ⁇ m or more and 50 ⁇ m or less. Thereby, the effect of promoting the penetration of the stripping solution can be further enhanced.
  • the step of forming the through hole 14 is preferably a step of forming the through hole by laser processing.
  • Laser processing is a particularly preferable method for obtaining a preferable embodiment of the through hole as described above.
  • the step of forming the through hole 14 is preferably a step of performing laser processing under the conditions that the wavelength is 600 nm or less and the pulse width is 1 ns to 100 ns. As a result, thermal damage to the second amorphous film 6 can be suppressed, and a suitable processing time can be maintained from the viewpoint of productivity.
  • the step of forming the through hole 14 is preferably a step of forming the through hole and accompanied by crystallization of the second amorphous film 6 by the annealing effect of the laser.
  • the step of forming the through hole 14 includes a step of applying a photoresist on the first amorphous film 8, and a step of forming the through hole by performing photolithography on the photoresist. Also good. Also in this case, like the method of forming the through hole 14 by laser processing, the processing time in the lift-off method can be shortened and the generation of burrs can be suppressed.
  • the step of exposing the second amorphous film 6 is preferably a step of removing the first amorphous film 8 by performing lift-off after removing the mask layer 13 by performing wet etching. .
  • flash accompanying lift-off can be suppressed more effectively.
  • a photoelectric conversion module and a solar power generation system including the photoelectric conversion element can also have high conversion efficiency.
  • the second embodiment is a photoelectric conversion module including the photoelectric conversion element of the first embodiment.
  • FIG. 14 is a schematic diagram illustrating an example of the configuration of the photoelectric conversion module according to the present embodiment.
  • the photoelectric conversion module 1000 includes a plurality of photoelectric conversion elements 1001, a cover 1002, and output terminals 1013 and 1014.
  • a plurality of photoelectric conversion elements 1001 are arranged in an array and connected in series.
  • FIG. 14 illustrates an arrangement in which the photoelectric conversion elements 1001 are connected in series.
  • the arrangement and connection method are not limited to this, and the photoelectric conversion elements 1001 may be connected in parallel or may be combined in series and parallel. It is good also as an arrangement.
  • the photoelectric conversion element of the first embodiment is used for each of the plurality of photoelectric conversion elements 1001. Note that the number of photoelectric conversion elements 1001 included in the photoelectric conversion module 1000 can be any integer of 2 or more.
  • the cover 1002 is composed of a weatherproof cover and covers the plurality of photoelectric conversion elements 1001.
  • the output terminal 1013 is connected to a photoelectric conversion element 1001 arranged at one end of a plurality of photoelectric conversion elements 1001 connected in series.
  • the output terminal 1014 is connected to the photoelectric conversion element 1001 arranged at the other end of the plurality of photoelectric conversion elements 1001 connected in series.
  • the third embodiment is a photovoltaic power generation system including the photoelectric conversion element of the first embodiment.
  • FIG. 15 is a schematic diagram illustrating an example of the configuration of the photovoltaic power generation system according to the present embodiment.
  • the photovoltaic power generation system 2000 includes a photoelectric conversion module array 2001, a connection box 2002, a power conditioner 2003, a distribution board 2004, and a power meter 2005.
  • the photoelectric conversion module array 2001 includes a plurality of photoelectric conversion modules 1000 (second embodiment).
  • the solar power generation system 2000 can be added with a function generally called “Home Energy Management System (HEMS)”. As a result, it is possible to contribute to power saving for each individual house while monitoring the power usage status of each room.
  • HEMS Home Energy Management System
  • connection box 2002 is connected to the photoelectric conversion module array 2001.
  • the power conditioner 2003 is connected to the connection box 2002.
  • the distribution board 2004 is connected to the power conditioner 2003 and the electrical equipment 2011.
  • the power meter 2005 is connected to the distribution board 2004 and the grid connection.
  • the photoelectric conversion module array 2001 converts sunlight into electricity to generate DC power and supplies the DC power to the connection box 2002.
  • connection box 2002 receives DC power generated by the photoelectric conversion module array 2001 and supplies DC power to the power conditioner 2003.
  • the power conditioner 2003 converts the DC power received from the connection box 2002 into AC power and supplies it to the distribution board 2004.
  • a part of the DC power received from the connection box 2002 may be supplied to the distribution board 2004 as it is without being converted into AC power.
  • Distribution board 2004 supplies at least one of AC power received from power conditioner 2003 and commercial power received via power meter 2005 to electrical equipment 2011.
  • the distribution board 2004 supplies the AC power received from the power conditioner 2003 to the electrical equipment 2011 when the AC power received from the power conditioner 2003 is larger than the power consumption of the electrical equipment 2011.
  • the surplus AC power is supplied to the grid connection via the power meter 2005.
  • the distribution board 2004 receives the AC power received from the grid connection and the AC power received from the power conditioner 2003 in the electrical equipment. To 2011.
  • the power meter 2005 measures the power in the direction from the grid connection to the distribution board 2004 and measures the power in the direction from the distribution board 2004 to the grid connection.
  • the photoelectric conversion module array 2001 will be described.
  • FIG. 16 is a schematic diagram showing an example of the configuration of the photoelectric conversion module array 2001 shown in FIG. Referring to FIG. 16, the photoelectric conversion module array 2001 includes a plurality of photoelectric conversion modules 1000 and output terminals 2013 and 2014.
  • FIG. 16 illustrates an arrangement in which the photoelectric conversion modules 1000 are connected in series.
  • the arrangement and connection method are not limited to this, and the photoelectric conversion modules 1000 may be connected in parallel or may be combined in series and parallel. It is good also as an arrangement.
  • the number of photoelectric conversion modules 1000 included in the photoelectric conversion module array 2001 can be any integer of 2 or more.
  • the output terminal 2013 is connected to the photoelectric conversion module 1000 located at one end of the plurality of photoelectric conversion modules 1000 connected in series.
  • the output terminal 2014 is connected to the photoelectric conversion module 1000 located at the other end of the plurality of photoelectric conversion modules 1000 connected in series.
  • the solar power generation system of the present embodiment is not limited to the above description as long as it includes the photoelectric conversion element of the first embodiment, and can take any configuration.
  • the fourth embodiment is a photovoltaic power generation system that is larger than the photovoltaic power generation system described as the third embodiment.
  • the photovoltaic power generation system according to the fourth embodiment also includes the photoelectric conversion element of the first embodiment.
  • FIG. 17 is a schematic diagram illustrating another example of the configuration of the photovoltaic power generation system according to the present embodiment.
  • solar power generation system 4000 includes a plurality of subsystems 4001, a plurality of power conditioners 4003, and a transformer 4004.
  • the photovoltaic power generation system 4000 is a larger scale photovoltaic power generation system than the photovoltaic power generation system 2000 shown in FIG.
  • the plurality of power conditioners 4003 are each connected to the subsystem 4001.
  • the number of the power conditioners 4003 and the subsystems 4001 connected thereto can be any integer of 2 or more.
  • the transformer 4004 is connected to a plurality of power conditioners 4003 and grid interconnection.
  • Each of the plurality of subsystems 4001 includes a plurality of module systems 3000.
  • the number of module systems 3000 in the subsystem 4001 can be any integer greater than or equal to two.
  • Each of the plurality of module systems 3000 includes a plurality of photoelectric conversion module arrays 2001, a plurality of connection boxes 3002, and a current collection box 3004.
  • the number of the junction box 3002 in the module system 3000 and the photoelectric conversion module array 2001 connected to the junction box 3002 can be any integer of 2 or more.
  • the current collection box 3004 is connected to a plurality of connection boxes 3002.
  • the power conditioner 4003 is connected to a plurality of current collection boxes 3004 in the subsystem 4001.
  • the plurality of photoelectric conversion module arrays 2001 of the module system 3000 convert sunlight into electricity to generate DC power, and supply the DC power to the current collection box 3004 via the connection box 3002.
  • a plurality of current collection boxes 3004 in the subsystem 4001 supplies DC power to the power conditioner 4003.
  • the plurality of power conditioners 4003 convert DC power into AC power and supply the AC power to the transformer 4004.
  • the transformer 4004 converts the voltage level of the AC power received from the plurality of power conditioners 4003 and supplies it to the grid interconnection.
  • the solar power generation system 4000 only needs to include the photoelectric conversion element of the first embodiment, and all the photoelectric conversion elements included in the solar power generation system 4000 may not be the photoelectric conversion elements of the first embodiment. Absent. For example, all the photoelectric conversion elements included in one subsystem 4001 are the photoelectric conversion elements of the first embodiment, and some or all of the photoelectric conversion elements included in another subsystem 4001 are the photoelectric conversion elements of the first embodiment. In some cases, it may not be a conversion element.
  • the present invention can be used for a photoelectric conversion element and a method for manufacturing a photoelectric conversion element, and can be preferably used particularly for a heterojunction back contact cell and a method for manufacturing a heterojunction back contact cell.

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un élément de conversion photoélectrique qui comprend : un substrat de semi-conducteur d'un premier type de conductivité ; un premier film amorphe du premier type de conductivité disposé sur une surface du substrat de semi-conducteur ; et un second film amorphe d'un second type de conductivité disposé de manière indépendante du premier film amorphe sur ladite surface. Le second film amorphe contient une région amorphe et une région cristalline, et la région cristalline est une région dans laquelle la valeur de courant de sortie durant une mesure de courant induit est supérieure à celle de la région amorphe. La région cristalline peut être formée par recuit par laser de la région amorphe.
PCT/JP2014/050519 2013-01-16 2014-01-15 Élément de conversion photoélectrique et procédé de fabrication d'élément de conversion photoélectrique Ceased WO2014112500A1 (fr)

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JP2013005429 2013-01-16
JP2013-005429 2013-01-16
JP2013-261081 2013-12-18
JP2013261081A JP2014158017A (ja) 2013-01-16 2013-12-18 光電変換素子および光電変換素子の製造方法

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JP2018170482A (ja) * 2017-03-30 2018-11-01 パナソニック株式会社 太陽電池セル及び太陽電池セルの製造方法
JP7361045B2 (ja) * 2018-11-21 2023-10-13 株式会社カネカ 太陽電池の製造方法
JP7195130B2 (ja) * 2018-12-14 2022-12-23 株式会社カネカ 裏面電極型太陽電池の製造方法
JP7274899B2 (ja) * 2019-03-22 2023-05-17 株式会社カネカ 太陽電池の製造方法
JP7186284B2 (ja) * 2019-03-29 2022-12-08 株式会社カネカ 太陽電池の製造方法

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WO2012039831A1 (fr) * 2010-09-24 2012-03-29 Sunpower Corporation Procédé de fabrication d'une zone d'émetteur d'une cellule solaire
WO2012132758A1 (fr) * 2011-03-28 2012-10-04 三洋電機株式会社 Dispositif de conversion photoélectrique, et procédé de production de dispositif de conversion photoélectrique
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WO2011030978A1 (fr) * 2009-09-14 2011-03-17 Lg Electronics Inc. Cellule solaire
EP2421057A2 (fr) * 2010-08-17 2012-02-22 Lg Electronics Inc. Cellule solaire
WO2012039831A1 (fr) * 2010-09-24 2012-03-29 Sunpower Corporation Procédé de fabrication d'une zone d'émetteur d'une cellule solaire
WO2012132758A1 (fr) * 2011-03-28 2012-10-04 三洋電機株式会社 Dispositif de conversion photoélectrique, et procédé de production de dispositif de conversion photoélectrique
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