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WO2014168039A1 - Film forming mask - Google Patents

Film forming mask Download PDF

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Publication number
WO2014168039A1
WO2014168039A1 PCT/JP2014/059523 JP2014059523W WO2014168039A1 WO 2014168039 A1 WO2014168039 A1 WO 2014168039A1 JP 2014059523 W JP2014059523 W JP 2014059523W WO 2014168039 A1 WO2014168039 A1 WO 2014168039A1
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WO
WIPO (PCT)
Prior art keywords
film
metal member
magnetic metal
substrate
linear expansion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2014/059523
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French (fr)
Japanese (ja)
Inventor
水村　通伸
修二 工藤
梶山　康一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
V Technology Co Ltd
Original Assignee
V Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by V Technology Co Ltd filed Critical V Technology Co Ltd
Priority to CN201480020185.0A priority Critical patent/CN105121692B/en
Priority to KR1020157024251A priority patent/KR102109071B1/en
Publication of WO2014168039A1 publication Critical patent/WO2014168039A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present invention relates to a composite film-formation mask having a structure in which a magnetic metal member and a resin film are in close contact, and in particular, a film-formation mask capable of achieving high definition of a thin film pattern formed while suppressing thermal deformation. It is related to.
  • a conventional film formation mask is a metal plate having a plate thickness of about 30 ⁇ m to 100 ⁇ m wet-etched using a resist mask to form a slit-shaped opening pattern (see, for example, Patent Document 1).
  • the metal plate is wet etched to form a plurality of opening patterns penetrating the metal plate, so that the resolution of the opening pattern is reduced by isotropic etching of the wet etching.
  • isotropic etching of the wet etching Unfortunately, only an opening width several times the plate thickness could be formed.
  • the invar when an invar having a linear expansion coefficient as small as about 1 ⁇ 10 ⁇ 6 / ° C. is used as a metal plate, the invar is difficult to wet-etch, so that the formed opening pattern has an electrode shape of the TFT substrate for organic EL. Together, it could not be formed into a rectangular shape. Therefore, when using Invar as a base material for a mask, generally, as described in Patent Document 1, the opening pattern is often formed in an elongated slit shape.
  • the metal film formation mask 1 is adsorbed by a magnet 15 disposed on the back surface of the substrate 17 as a film formation substrate, and is formed on the film formation surface of the substrate 17. Used in a state of being kept in close contact.
  • the magnetic field strength of the magnet 15 is increased in order to increase the adhesion. If the strength is increased, the portion 22a of the invar 22 may move in the direction intersecting the long axis (X-axis direction), and the opening pattern 6 may be deformed. Therefore, a magnetic field (for example, about 20 mT) whose intensity is weakened to such an extent that the portion 22a of the invar 22 does not move is usually applied.
  • the film formation mask 1 is formed in a direction (X-axis direction) in which the vapor deposition source 20 as a film formation source intersects the long axis (Y-axis) of the slit-shaped opening pattern 6.
  • a vapor deposition apparatus as a film deposition apparatus that performs vapor deposition while moving to
  • only the portion of the film formation mask 1 facing the vapor deposition source 20 is heated by the radiant heat of the vapor deposition source 20.
  • the invar 22 in this portion is thin and elongated, the heat capacity is smaller than that of the substrate 17. Accordingly, the elongated portion 22a between the adjacent opening patterns 6 of the invar 22 is thermally expanded and extends in the major axis direction (Y-axis direction).
  • the restraining force of the invar 22 by the magnet 15 is weak. Accordingly, the portion 22a of the invar 22 heated and extended by the vapor deposition source 20 is peeled off from the vapor deposition surface of the substrate 17 and hangs down as shown in FIG. A gap 23 is formed between the vapor deposition surface and the surface. Therefore, there is a problem that the edge of the thin film pattern 21 is blurred or the shape is enlarged by the wraparound of the vapor deposition material M evaporated from the vapor deposition source 20. In particular, this problem cannot be ignored as the thin film pattern 21 becomes higher in definition, and this is one factor that limits the increase in definition.
  • an object of the present invention is to provide a film formation mask capable of addressing such problems and achieving high definition of a thin film pattern formed while suppressing thermal deformation.
  • a vapor deposition mask according to the present invention has a structure in which a resin film is in close contact with one surface of a sheet-like magnetic metal member having a plurality of slit-like through holes arranged in parallel.
  • a film forming mask provided with a plurality of opening patterns penetrating the film portion in each through-hole, wherein the film has anisotropy different in linear expansion coefficient in two orthogonal axes, and the magnetic metal member
  • the axis having a small linear expansion coefficient of the film is aligned with the direction intersecting the long axis of the through hole.
  • the elongated portions between the adjacent through holes of the magnetic metal member are connected to each other via the film in the direction intersecting the long axis, and the movement in the same direction is restricted. Even if the magnetic field strength of the magnet disposed on the back surface of the substrate is increased to attract the member and bring the mask into close contact with the substrate, the portion of the magnetic metal member does not move. Therefore, by increasing the magnetic field strength of the magnet and increasing the attractive force to the magnetic metal member, even if the magnetic metal member is partially heated and extended by the radiant heat of the film forming source, the above-mentioned portion of the magnetic metal member is not removed from the substrate surface. It can prevent peeling off and sagging.
  • the film since the film has anisotropy in the linear expansion coefficient and the axis having a small linear expansion coefficient of the film is aligned with the direction intersecting the long axis of the through hole of the magnetic metal member, the film in the same direction is aligned. Elongation (thermal deformation) is suppressed, and displacement of the opening pattern in the same direction and shape expansion are suppressed. Therefore, this can also cope with high definition of the thin film pattern.
  • FIG. 1 It is a figure which shows one Embodiment of the film-forming mask by this invention, (a) is a top view, (b) is a principal part expanded sectional view of (a). It is a figure shown about manufacture of the film-forming mask by this invention, and is sectional drawing explaining the manufacturing process of the member for masks. It is a figure shown about manufacture of the film-forming mask by this invention, and is sectional drawing explaining a flame
  • FIG. 1A and 1B are views showing an embodiment of a film-forming mask according to the present invention.
  • FIG. 1A is a plan view
  • FIG. 1B is an enlarged cross-sectional view of a main part of FIG.
  • the film formation mask 1 has a structure in which a magnetic metal member and a resin film are in close contact with each other, and includes a magnetic metal member 2, a resin film 3, and a frame 4.
  • the magnetic metal member 2 holds a film 3 to be described later, and is adsorbed by a magnet (for example, an electromagnet) disposed on the back surface of a deposition target substrate (hereinafter simply referred to as “substrate”).
  • a linear expansion coefficient approximate to the linear expansion coefficient (for example, 5 ⁇ 10 ⁇ 6 / ° C.) of a glass substrate as a substrate, for adhering the film 3 to the film formation surface of the substrate with the film 3 interposed therebetween.
  • a sheet-like member such as an Fe—Ni alloy or an Fe—Ni—Co alloy.
  • a plurality of elongated slit-shaped through holes 5 are arranged in parallel at predetermined intervals.
  • a resin film 3 that transmits visible light is provided in close contact with one surface of the magnetic metal member 2.
  • This film 3 constitutes the main body of the mask, has anisotropy with different linear expansion coefficients in two orthogonal axes (X axis, Y axis), and the long axis of the through hole 5 of the magnetic metal member 2
  • An axis having a small linear expansion coefficient (X axis) is aligned in the intersecting direction.
  • the linear expansion coefficient in the direction of the small linear expansion coefficient (X-axis) is 4 ⁇ 10 ⁇ 6 / ° C. in a temperature range of 50 ° C. to 200 ° C., for example, in accordance with the linear expansion coefficient of the magnetic metal member 2.
  • a resin film of ⁇ 5 ⁇ 10 ⁇ 6 / ° C. is selected.
  • a specific example of such a resin film is a polyimide film manufactured by Toray DuPont Co., Ltd. and Kapton (registered trademark of DuPont, USA) 150EN-A.
  • each of the through holes 5 of the magnetic metal member 2 a plurality of opening patterns 6 that are arranged in the major axis direction of the through holes 5 and penetrate the film 3 are provided.
  • the opening pattern 6 is for selectively passing a film forming material evaporated from, for example, a vapor deposition source as a film forming source to form a thin film pattern having a fixed shape on the substrate.
  • the TFT substrate for organic EL Are formed in the same shape and size as the anode electrode. Alternatively, it may be formed in a size across a plurality of anode electrodes corresponding to the same color.
  • a frame 4 is provided to be joined to the peripheral edge of the magnetic metal member 2.
  • the frame 4 supports the composite sheet of the magnetic metal member 2 and the film 3 in a stretched state, and is a frame-like member having an opening 7 having a size including the plurality of through holes 5.
  • the metal member 2 is formed of the same metal material or a metal material having an approximate linear expansion coefficient.
  • the magnetic metal member 2 and the frame 4 may be joined using an adhesive, but the thin film pattern may be contaminated by the outgas generated by heat during film formation. Is desirable.
  • the film formation mask 1 configured as described above will be described.
  • the film formation mask 1 according to the present invention is generally manufactured through a mask member forming process, a frame bonding process, and an opening pattern forming process.
  • the mask member forming process will be described with reference to FIG.
  • a film 3 having a certain area is obtained by cutting a long polyimide film, for example, having a linear expansion coefficient that is biaxially different and anisotropy and has a thickness of about 10 ⁇ m to 30 ⁇ m. Make it.
  • the polyimide film is, for example, Kapton (registered trademark) 150EN-A manufactured by Toray DuPont.
  • This polyimide film has a linear expansion coefficient of 12 ⁇ 10 ⁇ 6 / ° C. in the longitudinal direction (corresponding to the Y-axis direction in FIG. 1 in the machine conveyance direction) and a linear expansion coefficient in the width direction (corresponding to the X-axis direction in FIG. 1). Is 5 ⁇ 10 ⁇ 6 / ° C., and is produced by stretching in the width direction while applying a predetermined temperature.
  • a seed layer 8 made of a highly conductive metal film is deposited on one surface of the film 3 by a known film formation technique such as vapor deposition, sputtering, or electroless plating. Form with.
  • a known film formation technique such as vapor deposition, sputtering, or electroless plating.
  • the film 3 is polyimide as described above, nickel or the like is preferably used as the seed layer 8. Since copper diffuses into the polyimide, it is not preferable as the seed layer 8 for the polyimide.
  • a photoresist is applied on the seed layer 8 of the film 3 to a thickness of 30 ⁇ m to 50 ⁇ m, for example, and then dried to form a resist layer 9.
  • the resist layer 9 is exposed and developed using a photomask, and the shape of the through holes 5 and the shapes corresponding to the positions where the plurality of elongated slits 5 are formed.
  • a plurality of island patterns 10 having the same dimensions are formed.
  • the island pattern 10 since the slit-shaped through-hole 5 has a long axis in a direction (Y-axis direction) intersecting with an axis (X-axis) direction in which the thermal expansion coefficient of the film 3 is small, the island pattern 10 has a Y-axis. It is elongated in the direction.
  • an island pattern for alignment marks (not shown) is also formed at a predetermined position in a portion outside the effective film formation region including the plurality of island patterns 10.
  • the film 3 is immersed in a plating bath, and as shown in FIG. 2E, the linear expansion coefficient is, for example, 5 ⁇ 10 ⁇ as the magnetic metal member 2 on the seed layer 8 outside the island pattern 10.
  • the linear expansion coefficient is, for example, 5 ⁇ 10 ⁇ as the magnetic metal member 2 on the seed layer 8 outside the island pattern 10.
  • an Fe—Ni alloy, an Fe—Ni—Co alloy or the like of about 6 / ° C. is formed to a thickness of 30 ⁇ m to 50 ⁇ m.
  • the plating bath to be used is appropriately selected from known plating baths according to the magnetic metal member 2 to be formed.
  • the island pattern 10 is peeled off using an organic solvent or a resist-dedicated release agent for the resist, and an opening 11 is formed at a position corresponding to the island pattern 10.
  • the film 3 is passed through the etching solution for the seed layer 8, and the seed layer 8 in the opening 11 is removed by etching as shown in FIG. Further, the film 3 is washed to obtain the mask member 12.
  • the mask member 12 is stretched on a frame-like frame 4 with a constant tension applied in the X-axis and Y-axis directions, and shown in FIG. 3 (b).
  • the magnetic metal member 2 and the frame 4 are welded by irradiating the peripheral edge of the mask member 12 with the laser beam L.
  • the mask member 12 is placed on the XY stage 13 of the laser processing apparatus with the film 3 facing downward.
  • the XY stage 13 has a structure in which the surface of the glass plate 14 is a mounting surface, and a magnet 15 (for example, an electromagnet) is disposed on the back side of the glass plate 14, and is configured to be movable in the X-axis and Y-axis directions. ing. Therefore, the mask member 12 is firmly fixed to the glass plate 14 with the magnetic metal member 2 adsorbed by the magnet 15.
  • a liquid 16 such as ethanol is applied onto the glass plate 14 and the film 3 is preferably brought into close contact with the glass plate 14 by the surface tension of the liquid 16.
  • an opening pattern 6 is formed.
  • the aperture pattern 6 is formed by stepping the XY stage 13 in a predetermined pitch at a predetermined pitch in the XY direction, and using a laser irradiation device (not shown), for example, a laser beam L having a wavelength of 355 nm is applied to the magnetic metal member 2.
  • the light is condensed on the film 3 in the through hole 5 and the film 3 is formed by laser ablation.
  • the cross-sectional shape at the focal point of the focused laser beam L is shaped to have the same shape and size as the opening pattern 6.
  • the focal height position is appropriately controlled so that the focal position of the laser beam L matches the position of the lower surface of the film 3, the shape of the opening end of the opening pattern 6 opposite to the magnetic metal member 2 is designed. Can finish on the street. Therefore, as shown in FIG. 5, if the surface 3a of the film 3 opposite to the magnetic metal member 2 is used as the contact surface with the substrate 17, the thin film pattern 21 having the designed size can be formed by vapor deposition. .
  • the wavelength of the laser beam L is not limited to 355 nm, and may be 266 nm, 254 nm or less as long as the resin film 3 can be ablated.
  • the opening pattern 6 is formed by a plurality of shots while gradually decreasing the focal position of the laser beam L from the surface on the magnetic metal member 2 side of the film 3 toward the opposite surface 3a, FIG. As shown in (b), the opening pattern 6 is formed by tapering the side wall 18 so that the opening area becomes narrower for a while from the surface 3b on the magnetic metal member 2 side of the film 3 toward the surface 3a on the opposite side. can do.
  • the taper angle of the side wall 18 of the opening pattern 6 is adjusted to the maximum incident angle with respect to the mask surface of the molecules of the film forming material (angle formed with the normal line of the mask surface), for example, 20 ° to 50 °, It can prevent more effectively that the opening edge part 6a of the opening pattern 6 in the magnetic metal member 2 side of the film 3 becomes a shadow of film-forming.
  • the alignment mark through-hole of the magnetic metal member 2 is a predetermined coordinate position with respect to the coordinate position of any one of the plurality of opening patterns 6.
  • An alignment mark (not shown) penetrating the inner film 3 for alignment with the substrate 17 is also formed.
  • the film forming apparatus is a vapor deposition apparatus
  • a magnet 15 for example, an electromagnet
  • the film formation mask 1 is disposed with the surface 3a of the film 3 facing the vapor deposition surface of the substrate 17, and both are aligned using alignment marks provided in advance on the substrate 17 and the film formation mask 1. Then, in a state where both are aligned, the magnetic metal member 2 of the film formation mask 1 is attracted by the magnetic force of the magnet 15, and the film formation mask 1 is adhered and fixed to the vapor deposition surface of the substrate 17. At this time, as shown in FIG. 1 (a), the elongated portions 2a located between the adjacent through holes 5 of the magnetic metal member 2 are connected to each other in the X-axis direction via the film 3 and are in the same direction.
  • the magnetic field strength of the magnet 15 is set to 200 mT, which is 10 times stronger than the conventional one.
  • the substrate holder 19 that integrally holds the substrate 17 and the film formation mask 1 is attached to the substrate attachment portion in the vacuum chamber of the vapor deposition apparatus with the vapor deposition surface side of the substrate 17 facing down. It is done.
  • the vapor deposition apparatus used here includes a vapor deposition source 20 having a crucible long in the major axis (Y-axis) direction corresponding to the slit-like through-hole 5 of the film formation mask 1, and the vapor deposition source 20 is connected to the through-hole. It is configured to be movable in a direction (X-axis direction) intersecting the long axis (Y-axis) of the hole 5.
  • vapor deposition on the substrate 17 is performed while the vapor deposition source 20 is moved at a constant speed in the X-axis direction and is positioned immediately above the vapor deposition source 20 at each moving point. This is performed through the opening pattern 6 of the film mask 1. Therefore, as in the prior art, a part of the film-forming mask 1 positioned immediately above the vapor deposition source 20 at each moving time is heated by the radiant heat of the vapor deposition source 20.
  • the magnetic field strength of the magnet 15 is set to 200 mT, which is 10 times stronger than the conventional one, so that the vapor deposition mask 1 is attracted to the substrate 17 by the strong magnetic force of the magnet 15.
  • the elongated portion 2a located between the adjacent through holes 5 of the magnetic metal member 2 extends and peels off from the substrate 17 and hangs down. Therefore, no gap is formed between the film formation mask 1 and the substrate 17, and the wraparound of the vapor deposition material M evaporated from the vapor deposition source 20 to the back side of the mask is suppressed, and the edge of the thin film pattern 21 is blurred or the shape is enlarged. There is no fear of doing it.
  • the film 3 to be used has anisotropy with different linear expansion coefficients in two orthogonal axes, and the film 3 is in a direction (X-axis direction) intersecting the major axis of the through hole 5 of the magnetic metal member 2. Since the axis
  • the linear expansion coefficient of the magnetic metal member 2 and the linear expansion coefficient of the film 3 in the X-axis direction are matched to the linear expansion coefficient of the substrate 17, the X-axis direction of the substrate 17, the magnetic metal member 2 and the film 3 is adjusted. Therefore, the displacement of the thin film pattern 21 formed on the substrate 17 in the X-axis direction can be suppressed.
  • the positional deviation in the Y-axis direction is not a problem because it is a positional deviation between the same colors in the case of an organic EL TFT substrate, for example.
  • the film formation mask 1 includes the frame 4
  • the present invention is not limited to this, and the frame 4 may be omitted.
  • the sheet-shaped film-forming mask 1 is placed on the substrate 17 in a state where the sheet-shaped film-forming mask 1 is stretched at a constant tension on the four sides.
  • the magnet 15 uses the magnetic metal member.
  • the film formation mask 1 may be adhered to the substrate 17 by adsorbing 2.
  • the film 3 has anisotropy in a linear expansion coefficient
  • the linear expansion coefficient with a small coefficient among them is As long as it approximates the linear expansion coefficient of the magnetic metal member 2, it may be another resin film or a multilayer laminated film.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The present invention is a film forming mask (1) that has the following configuration: a resin film (3) is tightly adhered to one surface of a sheet-shaped magnetic metal member (2) that has a plurality of slit-shaped through holes (5) arranged in parallel. The film forming mask (1) has a plurality of opening patterns (6) that penetrate the portions of the film (3) that are within the through holes (5). The film (3) has anisotropic properties such that perpendicular axes have different linear coefficients of expansion, and the smaller linear coefficient of expansion axis of the film (3) is aligned with the direction that intersects the longitudinal axis of the through holes (5) of the magnetic metal member (2).

Description

成膜マスクDeposition mask

　本発明は、磁性金属部材と樹脂製フィルムとを密接させた構造の複合型の成膜マスクに関し、特に、熱変形を抑制して成膜される薄膜パターンの高精細化を図り得る成膜マスクに係るものである。 The present invention relates to a composite film-formation mask having a structure in which a magnetic metal member and a resin film are in close contact, and in particular, a film-formation mask capable of achieving high definition of a thin film pattern formed while suppressing thermal deformation. It is related to.

　従来の成膜マスクは、板厚が３０μｍ～１００μｍ程度の金属板をレジストマスクを使用してウェットエッチングし、スリット状の開口パターンを形成したものとなっていた（例えば、特許文献１参照）。 A conventional film formation mask is a metal plate having a plate thickness of about 30 μm to 100 μm wet-etched using a resist mask to form a slit-shaped opening pattern (see, for example, Patent Document 1).

特開２００９－１２９７２８号公報JP 2009-129728 A

　しかし、このような従来の成膜マスクにおいては、金属板をウェットエッチングして該金属板に貫通する複数の開口パターンを形成しているので、ウェットエッチングの等方性エッチングにより開口パターンの解像度が悪く、板厚の数倍の開口幅しか形成することができなかった。 However, in such a conventional film formation mask, the metal plate is wet etched to form a plurality of opening patterns penetrating the metal plate, so that the resolution of the opening pattern is reduced by isotropic etching of the wet etching. Unfortunately, only an opening width several times the plate thickness could be formed.

　特に、金属板として線膨張係数が１×１０－６／℃程度と小さいインバーが使用されたときには、インバーはウェットエッチングし難いため、形成される開口パターンは、有機ＥＬ用ＴＦＴ基板の電極形状に合わせて矩形状に形成することができなかった。そこで、インバーをマスクの基材として使用するときには、一般に、上記特許文献１に記載されているように、開口パターンは細長いスリット状に形成することが多かった。 In particular, when an invar having a linear expansion coefficient as small as about 1 × 10 −6 / ° C. is used as a metal plate, the invar is difficult to wet-etch, so that the formed opening pattern has an electrode shape of the TFT substrate for organic EL. Together, it could not be formed into a rectangular shape. Therefore, when using Invar as a base material for a mask, generally, as described in Patent Document 1, the opening pattern is often formed in an elongated slit shape.

　そして、図６（ａ）に示すように、このようなメタルの成膜マスク１は、被成膜基板としての基板１７の裏面に配置された磁石１５により吸着され、基板１７の成膜面に密着保持された状態で使用される。この場合、インバー２２の隣接する開口パターン６間の細長状の部分２２ａに作用する磁束は、成膜マスク１の全面に亘って一様ではないため、密着力をあげるために磁石１５の磁界強度を強くするとインバー２２の上記部分２２ａが、その長軸と交差する方向（Ｘ軸方向）に動いて、開口パターン６が変形することがある。そこで、通常は、インバー２２の上記部分２２ａが動かない程度に強度を弱めた磁界（例えば、２０ｍＴ程度）が適用される。 As shown in FIG. 6A, the metal film formation mask 1 is adsorbed by a magnet 15 disposed on the back surface of the substrate 17 as a film formation substrate, and is formed on the film formation surface of the substrate 17. Used in a state of being kept in close contact. In this case, since the magnetic flux acting on the elongated portion 22a between the adjacent opening patterns 6 of the invar 22 is not uniform over the entire surface of the film formation mask 1, the magnetic field strength of the magnet 15 is increased in order to increase the adhesion. If the strength is increased, the portion 22a of the invar 22 may move in the direction intersecting the long axis (X-axis direction), and the opening pattern 6 may be deformed. Therefore, a magnetic field (for example, about 20 mT) whose intensity is weakened to such an extent that the portion 22a of the invar 22 does not move is usually applied.

　一方、上記成膜マスク１を、図６（ｂ）に示すように、成膜源としての蒸着源２０をスリット状の開口パターン６の長軸（Ｙ軸）に交差する方向（Ｘ軸方向）に移動しながら蒸着する成膜装置としての蒸着装置に適用したときには、蒸着源２０の輻射熱により成膜マスク１の蒸着源２０に対向した部分だけが加熱されることになる。特に、当該部分のインバー２２は薄くて細長いため、基板１７に比べて熱容量が小さい。したがって、インバー２２の隣接する開口パターン６間の細長状の部分２２ａが熱膨張して、その長軸方向（Ｙ軸方向）に伸びることになる。 On the other hand, as shown in FIG. 6B, the film formation mask 1 is formed in a direction (X-axis direction) in which the vapor deposition source 20 as a film formation source intersects the long axis (Y-axis) of the slit-shaped opening pattern 6. When applied to a vapor deposition apparatus as a film deposition apparatus that performs vapor deposition while moving to, only the portion of the film formation mask 1 facing the vapor deposition source 20 is heated by the radiant heat of the vapor deposition source 20. In particular, since the invar 22 in this portion is thin and elongated, the heat capacity is smaller than that of the substrate 17. Accordingly, the elongated portion 22a between the adjacent opening patterns 6 of the invar 22 is thermally expanded and extends in the major axis direction (Y-axis direction).

　上述したように、上記成膜マスク１に対しては、強度の強い磁界を作用させることができないため、磁石１５によるインバー２２の拘束力が弱い。したがって、蒸着源２０によって加熱されて伸びたインバー２２の上記部分２２ａは、図６（ｂ）に示すように、基板１７の蒸着面から剥がれて垂れ下がり、インバー２２の当該部分２２ａの裏面と基板１７の蒸着面との間に隙間２３が生じることになる。そのため、蒸着源２０から蒸発した蒸着材料Ｍの回り込みにより薄膜パターン２１のエッジがぼやけたり、形状が拡大したりする問題がある。特に、薄膜パターン２１が高精細になればなるほどこの問題は無視することができず、これが高精細化を制限する一要因ともなっていた。 As described above, since a strong magnetic field cannot be applied to the film formation mask 1, the restraining force of the invar 22 by the magnet 15 is weak. Accordingly, the portion 22a of the invar 22 heated and extended by the vapor deposition source 20 is peeled off from the vapor deposition surface of the substrate 17 and hangs down as shown in FIG. A gap 23 is formed between the vapor deposition surface and the surface. Therefore, there is a problem that the edge of the thin film pattern 21 is blurred or the shape is enlarged by the wraparound of the vapor deposition material M evaporated from the vapor deposition source 20. In particular, this problem cannot be ignored as the thin film pattern 21 becomes higher in definition, and this is one factor that limits the increase in definition.

　そこで、本発明は、このような問題点に対処し、熱変形を抑制して成膜される薄膜パターンの高精細化を図り得る成膜マスクを提供することを目的とする。 Therefore, an object of the present invention is to provide a film formation mask capable of addressing such problems and achieving high definition of a thin film pattern formed while suppressing thermal deformation.

　上記目的を達成するために、本発明による蒸着マスクは、スリット状の複数の貫通孔を並列に並べて有するシート状の磁性金属部材の一面に樹脂製のフィルムを密接させた構造を有し、前記各貫通孔内の前記フィルムの部分に貫通する複数の開口パターンを設けた成膜マスクであって、前記フィルムは、線膨張係数が直交二軸で異なる異方性を有し、前記磁性金属部材の前記貫通孔の長軸に交差する方向に前記フィルムの線膨張係数の小さい軸を合わせたものである。 In order to achieve the above object, a vapor deposition mask according to the present invention has a structure in which a resin film is in close contact with one surface of a sheet-like magnetic metal member having a plurality of slit-like through holes arranged in parallel. A film forming mask provided with a plurality of opening patterns penetrating the film portion in each through-hole, wherein the film has anisotropy different in linear expansion coefficient in two orthogonal axes, and the magnetic metal member The axis having a small linear expansion coefficient of the film is aligned with the direction intersecting the long axis of the through hole.

　本発明によれば、磁性金属部材の隣接する貫通孔間の細長状の部分は、その長軸と交差する方向にフィルムを介して互いに繋がって同方向の動きが規制されているため、磁性金属部材を吸着してマスクを基板に密着させるために基板の裏面に配置される磁石の磁界強度を従来よりも強くしても、磁性金属部材の上記部分が動くおそれがない。したがって、磁石の磁界強度を強くして磁性金属部材に対する吸着力を増すことにより、成膜源の輻射熱により磁性金属部材が部分的に加熱されて伸びても磁性金属部材の上記部分が基板面から剥がれて垂れ下がるのを防止することができる。それ故、マスクと基板との間に隙間が生じず、成膜源から到来する成膜材料のマスク裏面側への回り込みが抑制されて薄膜パターンのエッジがぼやけたり、形状が拡大したりするのを抑制することができる。したがって、薄膜パターンの高精細化が進んでも容易に対応することができる。 According to the present invention, the elongated portions between the adjacent through holes of the magnetic metal member are connected to each other via the film in the direction intersecting the long axis, and the movement in the same direction is restricted. Even if the magnetic field strength of the magnet disposed on the back surface of the substrate is increased to attract the member and bring the mask into close contact with the substrate, the portion of the magnetic metal member does not move. Therefore, by increasing the magnetic field strength of the magnet and increasing the attractive force to the magnetic metal member, even if the magnetic metal member is partially heated and extended by the radiant heat of the film forming source, the above-mentioned portion of the magnetic metal member is not removed from the substrate surface. It can prevent peeling off and sagging. Therefore, there is no gap between the mask and the substrate, and the wraparound of the deposition material coming from the deposition source to the back side of the mask is suppressed, and the edge of the thin film pattern is blurred or the shape is enlarged. Can be suppressed. Therefore, it is possible to easily cope with the progress of high definition thin film patterns.

　また、フィルムが線膨張係数に異方性を有し、磁性金属部材の貫通孔の長軸に交差する方向に上記フィルムの線膨張係数の小さい軸を合わせているので、同方向へのフィルムの伸び（熱変形）が抑えられ、開口パターンの同方向への位置ずれ及び形状拡大が抑えられる。したがって、これによっても、薄膜パターンの高精細化に対応することができる。 In addition, since the film has anisotropy in the linear expansion coefficient and the axis having a small linear expansion coefficient of the film is aligned with the direction intersecting the long axis of the through hole of the magnetic metal member, the film in the same direction is aligned. Elongation (thermal deformation) is suppressed, and displacement of the opening pattern in the same direction and shape expansion are suppressed. Therefore, this can also cope with high definition of the thin film pattern.

本発明による成膜マスクの一実施形態を示す図であり、（ａ）は平面図、（ｂ）は（ａ）の要部拡大断面図である。It is a figure which shows one Embodiment of the film-forming mask by this invention, (a) is a top view, (b) is a principal part expanded sectional view of (a). 本発明による成膜マスクの製造について示す図であり、マスク用部材の作製工程を説明する断面図である。It is a figure shown about manufacture of the film-forming mask by this invention, and is sectional drawing explaining the manufacturing process of the member for masks. 本発明による成膜マスクの製造について示す図であり、フレーム接合工程を説明する断面図である。It is a figure shown about manufacture of the film-forming mask by this invention, and is sectional drawing explaining a flame | frame joining process. 本発明による成膜マスクの製造について示す図であり、開口パターン形成工程を説明する断面図である。It is a figure shown about manufacture of the film-forming mask by this invention, and is sectional drawing explaining an opening pattern formation process. 本発明による成膜マスクを使用して行う成膜について説明する断面図である。It is sectional drawing explaining the film-forming performed using the film-forming mask by this invention. 従来のメタルマスクを使用して行う成膜について説明する断面図である。It is sectional drawing explaining the film-forming performed using the conventional metal mask.

　以下、本発明の実施形態を添付図面に基づいて詳細に説明する。図１は本発明による成膜マスクの一実施形態を示す図であり、（ａ）は平面図、（ｂ）は（ａ）の要部拡大断面図である。この成膜マスク１は、磁性金属部材と樹脂製フィルムとを密接させた構造を有するもので、磁性金属部材２と、樹脂製フィルム３と、フレーム４と、を備えて構成されている。 Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. 1A and 1B are views showing an embodiment of a film-forming mask according to the present invention. FIG. 1A is a plan view, and FIG. 1B is an enlarged cross-sectional view of a main part of FIG. The film formation mask 1 has a structure in which a magnetic metal member and a resin film are in close contact with each other, and includes a magnetic metal member 2, a resin film 3, and a frame 4.

　上記磁性金属部材２は、後述のフィルム３を保持すると共に、被成膜基板（以下、単に「基板」という）の裏面に配置された磁石（例えば、電磁石）によって吸着され、基板との間に上記フィルム３を挟んで該フィルム３を基板の成膜面に密着させるためのもので、基板としての、例えばガラス基板の線膨張係数（例えば５×１０－６／℃）に近似した線膨張係数を有する、例えばＦｅ－Ｎｉ系合金、Ｆｅ－Ｎｉ－Ｃｏ系合金等のシート状部材である。そして、細長いスリット状の複数の貫通孔５を予め定められた所定間隔で並列に並べて有している。 The magnetic metal member 2 holds a film 3 to be described later, and is adsorbed by a magnet (for example, an electromagnet) disposed on the back surface of a deposition target substrate (hereinafter simply referred to as “substrate”). A linear expansion coefficient approximate to the linear expansion coefficient (for example, 5 × 10 −6 / ° C.) of a glass substrate as a substrate, for adhering the film 3 to the film formation surface of the substrate with the film 3 interposed therebetween. For example, a sheet-like member such as an Fe—Ni alloy or an Fe—Ni—Co alloy. A plurality of elongated slit-shaped through holes 5 are arranged in parallel at predetermined intervals.

　上記磁性金属部材２の一面には、可視光を透過する樹脂製のフィルム３が密接して設けられている。このフィルム３は、マスクの本体部を成すもので、線膨張係数が直交二軸（Ｘ軸、Ｙ軸）で異なる異方性を有し、上記磁性金属部材２の貫通孔５の長軸に交差する方向に線膨張係数の小さい軸（Ｘ軸）が合わされている。この場合、上記線膨張係数の小さい軸（Ｘ軸）方向の線膨張係数は、磁性金属部材２の線膨張係数に合わせて、例えば５０℃～２００℃の温度範囲で４×１０－６／℃～５×１０－６／℃の樹脂フィルムが選択される。このような樹脂フィルムとしては、具体的には、例えば東レ・デュポン株式会社製のポリイミドフィルムでカプトン（米国デュポン社の登録商標）１５０ＥＮ－Ａがある。 A resin film 3 that transmits visible light is provided in close contact with one surface of the magnetic metal member 2. This film 3 constitutes the main body of the mask, has anisotropy with different linear expansion coefficients in two orthogonal axes (X axis, Y axis), and the long axis of the through hole 5 of the magnetic metal member 2 An axis having a small linear expansion coefficient (X axis) is aligned in the intersecting direction. In this case, the linear expansion coefficient in the direction of the small linear expansion coefficient (X-axis) is 4 × 10 −6 / ° C. in a temperature range of 50 ° C. to 200 ° C., for example, in accordance with the linear expansion coefficient of the magnetic metal member 2. A resin film of ˜5 × 10 −6 / ° C. is selected. A specific example of such a resin film is a polyimide film manufactured by Toray DuPont Co., Ltd. and Kapton (registered trademark of DuPont, USA) 150EN-A.

　上記磁性金属部材２の各貫通孔５内には、貫通孔５の長軸方向に並べてフィルム３を貫通する複数の開口パターン６が設けられている。この開口パターン６は、成膜源としての例えば蒸着源から蒸発した成膜材料を選択的に通過させて、基板上に一定形状の薄膜パターンを形成させるためのもので、例えば有機ＥＬ用ＴＦＴ基板のアノード電極と同じ形状大きさに形成されている。又は、同色に対応した複数のアノード電極に跨った大きさに形成されてもよい。 In each of the through holes 5 of the magnetic metal member 2, a plurality of opening patterns 6 that are arranged in the major axis direction of the through holes 5 and penetrate the film 3 are provided. The opening pattern 6 is for selectively passing a film forming material evaporated from, for example, a vapor deposition source as a film forming source to form a thin film pattern having a fixed shape on the substrate. For example, the TFT substrate for organic EL Are formed in the same shape and size as the anode electrode. Alternatively, it may be formed in a size across a plurality of anode electrodes corresponding to the same color.

　上記磁性金属部材２の周縁部に接合してフレーム４が設けられている。このフレーム４は、磁性金属部材２とフィルム３との複合シートを張った状態で支持するもので、上記複数の貫通孔５を内包する大きさの開口７を有する枠状の部材であり、磁性金属部材２と同じ金属材料又は近似した線膨張係数を有する金属材料で形成されている。なお、磁性金属部材２とフレーム４との接合は、接着剤を使用して行ってもよいが、成膜時の熱で発生するアウトガスにより薄膜パターンが汚染されるおそれがあるため、溶接するのが望ましい。 A frame 4 is provided to be joined to the peripheral edge of the magnetic metal member 2. The frame 4 supports the composite sheet of the magnetic metal member 2 and the film 3 in a stretched state, and is a frame-like member having an opening 7 having a size including the plurality of through holes 5. The metal member 2 is formed of the same metal material or a metal material having an approximate linear expansion coefficient. The magnetic metal member 2 and the frame 4 may be joined using an adhesive, but the thin film pattern may be contaminated by the outgas generated by heat during film formation. Is desirable.

　次に、このように構成された成膜マスク１の製造について説明する。本発明による成膜マスク１は、大別してマスク用部材の形成工程、フレーム接合工程及び開口パターン形成工程を経て製造される。最初に、マスク用部材の形成工程について、図２を参照して説明する。 Next, the production of the film formation mask 1 configured as described above will be described. The film formation mask 1 according to the present invention is generally manufactured through a mask member forming process, a frame bonding process, and an opening pattern forming process. First, the mask member forming process will be described with reference to FIG.

　先ず、図２（ａ）に示すように、線膨張係数が直交二軸で異なり異方性を有する、厚みが１０μｍ～３０μｍ程度で長尺の例えばポリイミドフィルムを裁断して一定面積のフィルム３を作製する。 First, as shown in FIG. 2 (a), a film 3 having a certain area is obtained by cutting a long polyimide film, for example, having a linear expansion coefficient that is biaxially different and anisotropy and has a thickness of about 10 μm to 30 μm. Make it.

　上記ポリイミドフィルムは、例えば東レ・デュポン株式会社製のカプトン（登録商標）１５０ＥＮ－Ａである。このポリイミドフィルムは、長手方向（機械搬送方向で図１のＹ軸方向に相当）の線膨張係数が１２×１０－６／℃、幅方向（図１のＸ軸方向に相当）の線膨張係数が５×１０－６／℃であり、予め定められた所定の温度を加えながら幅方向に延伸させることによって製造される。 The polyimide film is, for example, Kapton (registered trademark) 150EN-A manufactured by Toray DuPont. This polyimide film has a linear expansion coefficient of 12 × 10 −6 / ° C. in the longitudinal direction (corresponding to the Y-axis direction in FIG. 1 in the machine conveyance direction) and a linear expansion coefficient in the width direction (corresponding to the X-axis direction in FIG. 1). Is 5 × 10 −6 / ° C., and is produced by stretching in the width direction while applying a predetermined temperature.

　次に、図２（ｂ）に示すように、上記フィルム３の一面に良電導性の金属膜からなるシード層８を蒸着、スパッタリング又は無電解めっき等の公知の成膜技術により５０ｎｍ程度の厚みで形成する。この場合、フィルム３が上述のようにポリイミドであるときには、シード層８としてニッケル等を使用するのがよい。銅はポリイミド内に拡散するため、ポリイミドに対するシード層８としては好ましくない。 Next, as shown in FIG. 2B, a seed layer 8 made of a highly conductive metal film is deposited on one surface of the film 3 by a known film formation technique such as vapor deposition, sputtering, or electroless plating. Form with. In this case, when the film 3 is polyimide as described above, nickel or the like is preferably used as the seed layer 8. Since copper diffuses into the polyimide, it is not preferable as the seed layer 8 for the polyimide.

　次で、図２（ｃ）に示すように、フィルム３のシード層８上にフォトレジストを３０μｍ～５０μｍの厚みに例えばスプレー塗布した後、これを乾燥してレジスト層９を形成する。 Next, as shown in FIG. 2C, a photoresist is applied on the seed layer 8 of the film 3 to a thickness of 30 μm to 50 μm, for example, and then dried to form a resist layer 9.

　続いて、図２（ｄ）に示すように、フォトマスクを使用してレジスト層９を露光及び現像し、細長いスリット状の複数の貫通孔５の形成位置に対応して該貫通孔５と形状寸法の同じ複数の島パターン１０を形成する。この場合、スリット状の貫通孔５は、フィルム３の熱膨張係数が小さい軸（Ｘ軸）方向と交差する方向（Ｙ軸方向）に長軸を有するものであるため、島パターン１０はＹ軸方向に細長く形成される。また、同時に、複数の島パターン１０を内包する成膜有効領域外の部分にて、予め定められた所定位置に図示省略のアライメントマーク用の島パターンも形成される。 Subsequently, as shown in FIG. 2D, the resist layer 9 is exposed and developed using a photomask, and the shape of the through holes 5 and the shapes corresponding to the positions where the plurality of elongated slits 5 are formed. A plurality of island patterns 10 having the same dimensions are formed. In this case, since the slit-shaped through-hole 5 has a long axis in a direction (Y-axis direction) intersecting with an axis (X-axis) direction in which the thermal expansion coefficient of the film 3 is small, the island pattern 10 has a Y-axis. It is elongated in the direction. At the same time, an island pattern for alignment marks (not shown) is also formed at a predetermined position in a portion outside the effective film formation region including the plurality of island patterns 10.

　次に、フィルム３をめっき浴に浸漬して、図２（ｅ）に示すように、上記島パターン１０の外側のシード層８上に磁性金属部材２として、線膨張係数が例えば５×１０－６／℃程度の例えばＦｅ－Ｎｉ系合金、Ｆｅ－Ｎｉ－Ｃｏ系合金等を３０μｍ～５０μｍの厚みに形成する。この場合、使用するめっき浴は、形成しようとする磁性金属部材２に応じて公知のめっき浴のうちから適宜選択される。その後、同図（ｆ）に示すように、有機溶剤又は上記レジストに専用の剥離剤を使用して島パターン１０を剥離し、該島パターン１０に対応した位置に開口部１１を形成する。 Next, the film 3 is immersed in a plating bath, and as shown in FIG. 2E, the linear expansion coefficient is, for example, 5 × 10 − as the magnetic metal member 2 on the seed layer 8 outside the island pattern 10. For example, an Fe—Ni alloy, an Fe—Ni—Co alloy or the like of about 6 / ° C. is formed to a thickness of 30 μm to 50 μm. In this case, the plating bath to be used is appropriately selected from known plating baths according to the magnetic metal member 2 to be formed. Thereafter, as shown in FIG. 5F, the island pattern 10 is peeled off using an organic solvent or a resist-dedicated release agent for the resist, and an opening 11 is formed at a position corresponding to the island pattern 10.

　次いで、フィルム３をシード層８のエッチング液中を通過させて、図２（ｇ）に示すように、上記開口部１１内のシード層８をエッチングして除去し貫通孔５を形成する。さらに、フィルム３を洗浄してマスク用部材１２を得る。 Next, the film 3 is passed through the etching solution for the seed layer 8, and the seed layer 8 in the opening 11 is removed by etching as shown in FIG. Further, the film 3 is washed to obtain the mask member 12.

　次に、フレーム接合工程について、図３を参照して説明する。
　先ず、図３（ａ）に示すように、上記マスク用部材１２をＸ軸、Ｙ軸方向に一定のテンションをかけた状態で枠状のフレーム４に架張し、同図（ｂ）に示すようにマスク用部材１２の周縁部にレーザ光Ｌを照射して磁性金属部材２とフレーム４とを溶接する。 Next, the frame joining process will be described with reference to FIG.
First, as shown in FIG. 3 (a), the mask member 12 is stretched on a frame-like frame 4 with a constant tension applied in the X-axis and Y-axis directions, and shown in FIG. 3 (b). In this manner, the magnetic metal member 2 and the frame 4 are welded by irradiating the peripheral edge of the mask member 12 with the laser beam L.

　続いて、開口パターン形成工程について、図４を参照して説明する。
　先ず、図４（ａ）に示すように、レーザ加工装置のＸＹステージ１３上にマスク用部材１２を、フィルム３を下側にして載置する。このＸＹステージ１３は、ガラスプレート１４の表面を載置面とし、ガラスプレート１４の裏面側に磁石１５（例えば電磁石）を配置した構造を有し、Ｘ軸及びＹ軸方向に移動可能に構成されている。したがって、マスク用部材１２は、上記磁石１５により磁性金属部材２が吸着されてガラスプレート１４に密着固定される。このとき、同図に示すように、ガラスプレート１４上に例えばエタノール等の液体１６を塗布し、液体１６の表面張力によりフィルム３をガラスプレート１４上に密着させるとよい。 Next, the opening pattern forming process will be described with reference to FIG.
First, as shown in FIG. 4A, the mask member 12 is placed on the XY stage 13 of the laser processing apparatus with the film 3 facing downward. The XY stage 13 has a structure in which the surface of the glass plate 14 is a mounting surface, and a magnet 15 (for example, an electromagnet) is disposed on the back side of the glass plate 14, and is configured to be movable in the X-axis and Y-axis directions. ing. Therefore, the mask member 12 is firmly fixed to the glass plate 14 with the magnetic metal member 2 adsorbed by the magnet 15. At this time, as shown in the figure, a liquid 16 such as ethanol is applied onto the glass plate 14 and the film 3 is preferably brought into close contact with the glass plate 14 by the surface tension of the liquid 16.

　次に、図４（ｂ）に示すように、開口パターン６が形成される。詳細には、開口パターン６は、ＸＹステージ１３を予め定められた所定ピッチでＸＹ方向にステップ移動しながら、図示省略のレーザ照射装置により、例えば波長が３５５ｎｍのレーザ光Ｌを磁性金属部材２の貫通孔５内のフィルム３上に集光し、フィルム３をレーザアブレーションして形成される。このとき、集光するレーザ光Ｌの焦点における断面形状は、開口パターン６と同じ形状大きさとなるように整形されている。したがって、レーザ光Ｌの焦点位置がフィルム３の下面の位置に合致するように焦点高さ位置を適切に制御すれば、開口パターン６の磁性金属部材２とは反対側の開口端の形状を設計通りに仕上げることができる。それ故、図５に示すように磁性金属部材２とは反対側のフィルム３の面３ａを基板１７との密着面とすれば、設計通りの大きさの薄膜パターン２１を蒸着形成することができる。なお、レーザ光Ｌの波長は、３５５ｎｍに限られず、樹脂フィルム３をアブレーション加工することが可能であれば２６６ｎｍ，２５４ｎｍ又はそれ以下であってもよい。 Next, as shown in FIG. 4B, an opening pattern 6 is formed. Specifically, the aperture pattern 6 is formed by stepping the XY stage 13 in a predetermined pitch at a predetermined pitch in the XY direction, and using a laser irradiation device (not shown), for example, a laser beam L having a wavelength of 355 nm is applied to the magnetic metal member 2. The light is condensed on the film 3 in the through hole 5 and the film 3 is formed by laser ablation. At this time, the cross-sectional shape at the focal point of the focused laser beam L is shaped to have the same shape and size as the opening pattern 6. Therefore, if the focal height position is appropriately controlled so that the focal position of the laser beam L matches the position of the lower surface of the film 3, the shape of the opening end of the opening pattern 6 opposite to the magnetic metal member 2 is designed. Can finish on the street. Therefore, as shown in FIG. 5, if the surface 3a of the film 3 opposite to the magnetic metal member 2 is used as the contact surface with the substrate 17, the thin film pattern 21 having the designed size can be formed by vapor deposition. . The wavelength of the laser beam L is not limited to 355 nm, and may be 266 nm, 254 nm or less as long as the resin film 3 can be ablated.

　また、レーザ光Ｌの焦点の高さ位置をフィルム３の磁性金属部材２側の面からその反対側の面３ａに向かって徐々に下げながら、複数ショットで開口パターン６を形成すれば、図１（ｂ）に示すように、開口面積がフィルム３の磁性金属部材２側の面３ｂからその反対側の面３ａに向かって暫時狭くなるように、側壁１８にテーパを付けて開口パターン６を形成することができる。このとき、開口パターン６の側壁１８のテーパ角度を成膜材料の分子のマスク面に対する最大入射角度（マスク面の法線と成す角度）に合わせて、例えば２０°～５０°に形成すれば、フィルム３の磁性金属部材２側における開口パターン６の開口端縁部６ａが成膜の影となるのをより効果的に防止することができる。 Further, if the opening pattern 6 is formed by a plurality of shots while gradually decreasing the focal position of the laser beam L from the surface on the magnetic metal member 2 side of the film 3 toward the opposite surface 3a, FIG. As shown in (b), the opening pattern 6 is formed by tapering the side wall 18 so that the opening area becomes narrower for a while from the surface 3b on the magnetic metal member 2 side of the film 3 toward the surface 3a on the opposite side. can do. At this time, if the taper angle of the side wall 18 of the opening pattern 6 is adjusted to the maximum incident angle with respect to the mask surface of the molecules of the film forming material (angle formed with the normal line of the mask surface), for example, 20 ° to 50 °, It can prevent more effectively that the opening edge part 6a of the opening pattern 6 in the magnetic metal member 2 side of the film 3 becomes a shadow of film-forming.

　なお、開口パターン形成工程においては、複数の開口パターン６のうち、いずれか一つの開口パターン６の座標位置に対して予め定められた座標位置であって、磁性金属部材２のアライメントマーク用貫通孔内のフィルム３に基板１７とのアライメントをとるための貫通する図示省略のアライメントマークも形成される。 In the opening pattern formation step, the alignment mark through-hole of the magnetic metal member 2 is a predetermined coordinate position with respect to the coordinate position of any one of the plurality of opening patterns 6. An alignment mark (not shown) penetrating the inner film 3 for alignment with the substrate 17 is also formed.

　次に、本発明による成膜マスク１を使用して行う薄膜パターン２１の形成について説明する。ここでは、一例として成膜装置が蒸着装置である場合について説明する。
　先ず、図５（ａ）に示すように、裏面に磁石１５（例えば電磁石）を配置した状態で基板１７が基板ホルダー１９に保持される。 Next, formation of the thin film pattern 21 performed using the film formation mask 1 according to the present invention will be described. Here, a case where the film forming apparatus is a vapor deposition apparatus will be described as an example.
First, as shown in FIG. 5A, the substrate 17 is held by the substrate holder 19 with a magnet 15 (for example, an electromagnet) disposed on the back surface.

　続いて、基板１７の蒸着面にフィルム３の面３ａを対向させて成膜マスク１が配置され、基板１７及び成膜マスク１に予め設けられたアライメントマークを使用して両者がアライメントされる。そして、両者がアライメントされた状態で、磁石１５の磁力により成膜マスク１の磁性金属部材２が吸着され、成膜マスク１が基板１７の蒸着面に密着して固定される。このとき、図１（ａ）に示すように、磁性金属部材２の隣接する貫通孔５の間に位置する細長状の部分２ａは、フィルム３を介してＸ軸方向に互いに繋がって同方向の動きが規制されているため、磁石１５の磁界強度を従来よりも強くしても、磁性金属部材２の上記部分２ａは動かない。それ故、本実施形態においては、磁石１５の磁界強度を従来よりも１０倍強い２００ｍＴに設定している。 Subsequently, the film formation mask 1 is disposed with the surface 3a of the film 3 facing the vapor deposition surface of the substrate 17, and both are aligned using alignment marks provided in advance on the substrate 17 and the film formation mask 1. Then, in a state where both are aligned, the magnetic metal member 2 of the film formation mask 1 is attracted by the magnetic force of the magnet 15, and the film formation mask 1 is adhered and fixed to the vapor deposition surface of the substrate 17. At this time, as shown in FIG. 1 (a), the elongated portions 2a located between the adjacent through holes 5 of the magnetic metal member 2 are connected to each other in the X-axis direction via the film 3 and are in the same direction. Since the movement is restricted, the portion 2a of the magnetic metal member 2 does not move even if the magnetic field strength of the magnet 15 is made stronger than before. Therefore, in this embodiment, the magnetic field strength of the magnet 15 is set to 200 mT, which is 10 times stronger than the conventional one.

　基板１７及び成膜マスク１を一体的に保持した基板ホルダー１９は、図５（ｂ）に示すように、蒸着装置の真空槽内の基板取付け部に基板１７の蒸着面側を下にして取り付けられる。 As shown in FIG. 5B, the substrate holder 19 that integrally holds the substrate 17 and the film formation mask 1 is attached to the substrate attachment portion in the vacuum chamber of the vapor deposition apparatus with the vapor deposition surface side of the substrate 17 facing down. It is done.

　ここで使用する蒸着装置は、成膜マスク１のスリット状の貫通孔５に対応して、その長軸（Ｙ軸）方向に長いルツボを有する蒸着源２０を備え、該蒸着源２０が上記貫通孔５の長軸（Ｙ軸）と交差する方向（Ｘ軸方向）に移動可能に構成されたものである。 The vapor deposition apparatus used here includes a vapor deposition source 20 having a crucible long in the major axis (Y-axis) direction corresponding to the slit-like through-hole 5 of the film formation mask 1, and the vapor deposition source 20 is connected to the through-hole. It is configured to be movable in a direction (X-axis direction) intersecting the long axis (Y-axis) of the hole 5.

　したがって、基板１７への蒸着は、図５（ｂ）に示すように、蒸着源２０をＸ軸方向に一定速度で移動しながら、移動中の各時点における蒸着源２０の真上に位置する成膜マスク１の開口パターン６を介して行われる。それ故、従来技術と同様に、移動中の各時点における蒸着源２０の真上に位置する成膜マスク１の一部分が蒸着源２０の輻射熱により加熱される。 Therefore, as shown in FIG. 5B, vapor deposition on the substrate 17 is performed while the vapor deposition source 20 is moved at a constant speed in the X-axis direction and is positioned immediately above the vapor deposition source 20 at each moving point. This is performed through the opening pattern 6 of the film mask 1. Therefore, as in the prior art, a part of the film-forming mask 1 positioned immediately above the vapor deposition source 20 at each moving time is heated by the radiant heat of the vapor deposition source 20.

　しかしながら、従来技術と違って、本実施形態においては、磁石１５の磁界強度が従来よりも１０倍強い２００ｍＴに設定されているため、蒸着マスク１は磁石１５の強い磁力によって基板１７に吸着されており、磁性金属部材２の隣接する貫通孔５の間に位置する細長状の部分２ａが伸びて基板１７から剥がれ、垂れ下がるおそれがない。したがって、成膜マスク１と基板１７との間に隙間が生じず、蒸着源２０から蒸発した蒸着材料Ｍのマスク裏面側への回り込みが抑制されて薄膜パターン２１のエッジがぼやけたり、形状が拡大したりするおそれがない。 However, unlike the prior art, in this embodiment, the magnetic field strength of the magnet 15 is set to 200 mT, which is 10 times stronger than the conventional one, so that the vapor deposition mask 1 is attracted to the substrate 17 by the strong magnetic force of the magnet 15. In addition, there is no possibility that the elongated portion 2a located between the adjacent through holes 5 of the magnetic metal member 2 extends and peels off from the substrate 17 and hangs down. Therefore, no gap is formed between the film formation mask 1 and the substrate 17, and the wraparound of the vapor deposition material M evaporated from the vapor deposition source 20 to the back side of the mask is suppressed, and the edge of the thin film pattern 21 is blurred or the shape is enlarged. There is no fear of doing it.

　また、使用するフィルム３は、線膨張係数が直交二軸で異なる異方性を有するものであり、磁性金属部材２の貫通孔５の長軸に交差する方向（Ｘ軸方向）にフィルム３の線膨張係数の小さい軸を合わせているので、Ｘ軸方向へのフィルム３の伸びが抑えられ、開口パターン６の同方向への位置ずれ及び形状拡大が抑えられる。したがって、例えば有機ＥＬ用ＴＦＴ基板において画素ピッチの狭い高精細化が進んでも、隣接する画素に他の色の有機ＥＬ材料が付着するのを避けることができる。 Moreover, the film 3 to be used has anisotropy with different linear expansion coefficients in two orthogonal axes, and the film 3 is in a direction (X-axis direction) intersecting the major axis of the through hole 5 of the magnetic metal member 2. Since the axis | shaft with a small linear expansion coefficient is match | combined, the extension of the film 3 to a X-axis direction is suppressed, and the position shift and shape expansion of the opening pattern 6 to the same direction are suppressed. Therefore, for example, even if the pixel pitch of the organic EL TFT substrate is increased and the resolution is reduced, it is possible to prevent the organic EL materials of other colors from adhering to the adjacent pixels.

　さらに、磁性金属部材２の線膨張係数、及びフィルム３のＸ軸方向の線膨張係数を基板１７の線膨張係数に合わせているため、基板１７、磁性金属部材２及びフィルム３のＸ軸方向への変形量が略同じになり、基板１７上に形成される薄膜パターン２１のＸ軸方向への位置ずれを抑制することができる。なお、Ｙ軸方向への位置ずれは、例えば有機ＥＬ用ＴＦＴ基板の場合には、同色間での位置ずれであるため問題とならない。 Further, since the linear expansion coefficient of the magnetic metal member 2 and the linear expansion coefficient of the film 3 in the X-axis direction are matched to the linear expansion coefficient of the substrate 17, the X-axis direction of the substrate 17, the magnetic metal member 2 and the film 3 is adjusted. Therefore, the displacement of the thin film pattern 21 formed on the substrate 17 in the X-axis direction can be suppressed. The positional deviation in the Y-axis direction is not a problem because it is a positional deviation between the same colors in the case of an organic EL TFT substrate, for example.

　なお、上記実施形態においては、成膜マスク１がフレーム４を備えたものである場合について説明したが、本発明はこれに限られず、フレーム４は無くてもよい。この場合は、シート状の成膜マスク１をその四方に一定の張力で張った状態で基板１７上に設置し、基板１７と成膜マスク１のアライメントを行った後、磁石１５で磁性金属部材２を吸着して基板１７に成膜マスク１を密着させるとよい。 In the above embodiment, the case where the film formation mask 1 includes the frame 4 has been described. However, the present invention is not limited to this, and the frame 4 may be omitted. In this case, the sheet-shaped film-forming mask 1 is placed on the substrate 17 in a state where the sheet-shaped film-forming mask 1 is stretched at a constant tension on the four sides. After the substrate 17 and the film-forming mask 1 are aligned, the magnet 15 uses the magnetic metal member. The film formation mask 1 may be adhered to the substrate 17 by adsorbing 2.

　また、上記実施形態においては、フィルム３がポリイミドである場合について説明したが、本発明はこれに限られず、フィルム３は線膨張係数に異方性を有し、そのうち係数の小さい線膨張係数が磁性金属部材２の線膨張係数に近似したものであれば、他の樹脂製フィルムであっても、多層積層フィルムであってもよい。 Moreover, in the said embodiment, although the case where the film 3 was a polyimide was demonstrated, this invention is not restricted to this, The film 3 has anisotropy in a linear expansion coefficient, The linear expansion coefficient with a small coefficient among them is As long as it approximates the linear expansion coefficient of the magnetic metal member 2, it may be another resin film or a multilayer laminated film.

　１…成膜マスク
　２…磁性金属部材
　３…フィルム
　４…フレーム
　５…貫通孔
　６…開口パターン
　７…開口
　１７…基板（被成膜基板）
　２０…蒸着源 DESCRIPTION OF SYMBOLS 1 ... Film-forming mask 2 ... Magnetic metal member 3 ... Film 4 ... Frame 5 ... Through-hole 6 ... Opening pattern 7 ... Opening 17 ... Substrate (film-forming substrate)
20 ... Vapor deposition source

Claims (9)

　スリット状の複数の貫通孔を並列に並べて有するシート状の磁性金属部材の一面に樹脂製のフィルムを密接させた構造を有し、前記各貫通孔内の前記フィルムの部分に貫通する複数の開口パターンを設けた成膜マスクであって、
　前記フィルムは、線膨張係数が直交二軸で異なる異方性を有し、
　前記磁性金属部材の前記貫通孔の長軸に交差する方向に前記フィルムの線膨張係数の小さい軸を合わせたことを特徴とする成膜マスク。 A plurality of openings having a structure in which a resin film is in close contact with one surface of a sheet-like magnetic metal member having a plurality of slit-shaped through holes arranged in parallel, and penetrating through the film portions in the respective through holes A film formation mask provided with a pattern,
The film has anisotropy with different linear expansion coefficients in orthogonal two axes,
A film-forming mask characterized in that an axis having a small linear expansion coefficient of the film is aligned with a direction intersecting a major axis of the through hole of the magnetic metal member. 　前記磁性金属部材の線膨張係数と、前記フィルムの係数の小さい線膨張係数とを合わせたことを特徴とする請求項１記載の成膜マスク。 The film-forming mask according to claim 1, wherein a linear expansion coefficient of the magnetic metal member and a linear expansion coefficient having a small coefficient of the film are combined. 　前記各線膨張係数を被成膜基板の線膨張係数に合わせたことを特徴とする請求項２に記載の成膜マスク。 3. The film formation mask according to claim 2, wherein each linear expansion coefficient is matched with a linear expansion coefficient of a film formation substrate. 　前記フィルムは、ポリイミドであることを特徴とする請求項１～３のいずれか１項に記載の成膜マスク。 The film-forming mask according to any one of claims 1 to 3, wherein the film is made of polyimide. 　成膜着基板の蒸着面に密接させて使用され、前記貫通孔の長軸に交差する方向に前記被成膜基板と成膜源とを相対的に移動しながら成膜する成膜装置に適用されることを特徴とする請求項１～３のいずれか１項に記載の成膜マスク。 Used in close contact with the deposition surface of the deposition substrate, and applied to a deposition apparatus that deposits a film while relatively moving the deposition target substrate and the deposition source in a direction intersecting the long axis of the through hole. The film-forming mask according to claim 1, wherein the film-forming mask is formed. 　成膜着基板の蒸着面に密接させて使用され、前記貫通孔の長軸に交差する方向に前記被成膜基板と成膜源とを相対的に移動しながら成膜する成膜装置に適用されることを特徴とする請求項４記載の成膜マスク。 Used in close contact with the deposition surface of the deposition substrate, and applied to a deposition apparatus that deposits a film while relatively moving the deposition target substrate and the deposition source in a direction intersecting the long axis of the through hole. The film-forming mask according to claim 4, wherein 　前記磁性金属部材の周縁部に接合して、前記複数の貫通孔を内包する大きさの開口を有する枠状のフレームを備えたことを特徴とする請求項１～３のいずれか１項に記載の成膜マスク。 The frame-like frame having an opening of a size that is joined to a peripheral edge portion of the magnetic metal member and encloses the plurality of through holes is provided. Film deposition mask. 　前記磁性金属部材の周縁部に接合して、前記複数の貫通孔を内包する大きさの開口を有する枠状のフレームを備えたことを特徴とする請求項４記載の成膜マスク。 The film forming mask according to claim 4, further comprising a frame-like frame having an opening sized to enclose the plurality of through-holes and bonded to a peripheral edge of the magnetic metal member. 　前記磁性金属部材の周縁部に接合して、前記複数の貫通孔を内包する大きさの開口を有する枠状のフレームを備えたことを特徴とする請求項５記載の成膜マスク。 6. The film forming mask according to claim 5, further comprising a frame-like frame having an opening sized to enclose the plurality of through-holes and joined to a peripheral edge of the magnetic metal member.
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WO2017168774A1 (en) * 2016-03-28 2017-10-05 鴻海精密工業股▲ふん▼有限公司 Manufacturing method and manufacturing device for deposition mask

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