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WO2014164493A1 - Procédés pour éliminer de la photorésine sur des substrats avec de l'hydrogène atomique - Google Patents

Procédés pour éliminer de la photorésine sur des substrats avec de l'hydrogène atomique Download PDF

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Publication number
WO2014164493A1
WO2014164493A1 PCT/US2014/022586 US2014022586W WO2014164493A1 WO 2014164493 A1 WO2014164493 A1 WO 2014164493A1 US 2014022586 W US2014022586 W US 2014022586W WO 2014164493 A1 WO2014164493 A1 WO 2014164493A1
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WIPO (PCT)
Prior art keywords
substrate
photoresist
chamber
process chamber
hydrogen
Prior art date
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Ceased
Application number
PCT/US2014/022586
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English (en)
Inventor
Jeongwon Park
Joe Griffith Cruz
Pravin K. Narwankar
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Applied Materials Inc
Original Assignee
Applied Materials Inc
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Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2014164493A1 publication Critical patent/WO2014164493A1/fr
Anticipated expiration legal-status Critical
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Classifications

    • H10P50/287—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3342—Resist stripping

Definitions

  • Embodiments of the present invention generally relate to semiconductor substrate processing.
  • a method of removing photoresist from a substrate includes: providing a hydrogen containing gas to a first process chamber having a plurality of filaments; flowing a current through the plurality of filaments to raise a temperature of the plurality of filaments to a first temperature sufficient to decompose at least a portion of the hydrogen containing gas to form hydrogen atoms; and removing a photoresist from the substrate by exposing the photoresist to hydrogen atoms formed by the decomposition of the hydrogen containing gas.
  • Figure 1 is a flow diagram of a method for removing photoresist from a substrate in accordance with some embodiments of the present invention.
  • Figures 2A-B are illustrative cross-sectional views of a substrate having a photoresist to be removed during different stages of the method of Figure 1 in accordance with some embodiments of the present invention.
  • Figure 3 is a processing system suitable for performing the methods depicted in Figure 1 in accordance with some embodiments of the present invention.
  • Figure 4 is a processing system suitable for performing the methods depicted in Figure 1 in accordance with some embodiments of the present invention.
  • the inventive methods facilitate the removal ⁇ e.g., ashing or cleaning) of a photoresist from a substrate while causing less damage to the substrate or oxidation of layers formed thereon as compared to conventional cleaning processes (e.g., using one or more of a plasma, a high temperature treatment, a wet cleaning process, or a fluorine based chemistry).
  • conventional cleaning processes e.g., using one or more of a plasma, a high temperature treatment, a wet cleaning process, or a fluorine based chemistry.
  • the photoresist may volatilize the photoresist materials during removal, thereby leaving no residues, thus providing a dry photoresist removal process.
  • a process chamber that utilizes a hot wire source to produce atomic hydrogen e.g., a hot wire processing chamber
  • the inventors have observed that a higher density population of atomic hydrogen ⁇ e.g., such as 1 .3 to about 3 times higher) may be provided as compared to methods conventionally used in the semiconductor industry to produce atomic hydrogen.
  • the inventive methods have been shown to be particularly effective for the removal of polymer and carbon containing photoresist materials.
  • Figure 1 is a flow diagram of a method 100 for removing ⁇ e.g., ashing) photoresist from a substrate in accordance with some embodiments of the present invention.
  • Figures 2A-B are illustrative cross-sectional views of a substrate having a photoresist to be removes during different stages of the processing sequence of Figure 1 in accordance with some embodiments of the present invention.
  • the inventive methods may be performed in any apparatus suitable for processing semiconductor substrates in accordance with embodiments of the present invention, such as the apparatus discussed below with respect to Figures 3 and 4.
  • the method 100 generally begins at 102 where a substrate 200 having a photoresist 204 to be removed may be optionally preheated. Preheating the substrate 200 prior to performing a removal process ⁇ e.g. the removal process as described below) may facilitate a de-gassing and/or removal of contaminants from the substrate 200. In some embodiments, the substrate 200 may be preheated in the same chamber as used for the removal process. Alternatively, in some embodiments, a preheat chamber different than that used for the removal process may be utilized (such as preheat chamber 350 discussed below with respect to Figure 3).
  • the preheat chamber may be any type of chamber suitable to preheat the substrate 200 to a desired temperature, for example such as a dedicated preheat chamber, an annealing chamber ⁇ e.g., a rapid thermal annealing (RTA) chamber), a deposition chamber ⁇ e.g., a chemical vapor deposition (CVD) chamber), or the like.
  • the preheat chamber may be a hot wire processing chamber ⁇ e.g.
  • the preheat chamber may be one of a plurality of chambers coupled to a multi-chamber tool, for example such as a cluster tool or an in-line process tool.
  • the substrate 200 may be preheated to any temperature suitable to de-gas or remove contaminants from the substrate 200.
  • the substrate 200 may be preheated to a temperature of up to about 500 degrees Celsius.
  • the substrate 200 may be preheated via any suitable heat source, for example, heating lamps or resistive heaters disposed within the chamber, heaters embedded within a substrate support, filaments of a hot wire source, or the like.
  • the hot wire source e.g., the filaments
  • the hot wire source may be heated to a temperature of about 1000 to about 2500 degrees to facilitate preheating the substrate 200 to the desired temperature. Other temperatures may be used as appropriate for the substrate and the contaminants to be removed.
  • a hydrogen containing gas may be provided to the preheat chamber while preheating the substrate.
  • the hydrogen containing gas may consist essentially of or may consist of one or more of hydrogen (H 2 ) gas, a mixture of hydrogen (H 2 ) gas and nitrogen (N 2 ) gas, ammonia (NH 3 ), hydrogen peroxide (H2O2), or combinations thereof, mixed with a dilutant gas such as one or more of helium (He), Argon (Ar), or the like.
  • the hydrogen containing gas may further facilitate the de-gassing and/or removal of contaminants from the substrate 200.
  • the substrate 200 may be any substrate suitable for semiconductor device fabrication, for example, such as a doped or un-doped silicon substrate, a lll-V compound substrate, a ll-VI compound substrate, a silicon germanium (SiGe) substrate, an epi-substrate, a silicon-on-insulator (SOI) substrate, oxides thereof, or the like.
  • the substrate 200 may comprise one or more layers disposed in or on the substrate.
  • the substrate 200 may comprise a buried oxide layer 206 comprising, for example, silicon oxide (S1O2), aluminum oxide (AI2O3), or the like.
  • a layer 202 to be patterned through the photoresist 204 may be disposed between the substrate 200 and the photoresist 204.
  • one or more features e.g., a via, a trench, a dual damascene structure, or the like
  • the one or more features may be a high aspect ratio feature (e.g., high aspect ratio via).
  • a high aspect ratio feature is a feature having an aspect ratio of length to width of at least 4:1 , or in some embodiments, at least 5:1 .
  • the photoresist 204 is disposed on the substrate 200 and may comprise any materials suitable to provide a template to form one or more features 208 ⁇ e.g., a via, a trench, a dual damascene structure, or the like) in an underlying layer ⁇ e.g., the layer 202) and/or the substrate 200.
  • the photoresist 204 may comprise polymers, organic compounds ⁇ e.g., comprising carbon, hydrogen and oxygen), an amorphous carbon, such as Advanced Patterning Film (APF), available from Applied Materials, Inc., located in Santa Clara, California, a tri-layer resist ⁇ e.g., a photoresist layer, a Si-rich anti-reflective coating (ARC) layer, and a carbon-rich ARC, or bottom ARC (BARC) layer), a spin-on hardmask (SOH), or the like.
  • the photoresist 204 may also be a positive photoresist or a negative photoresist.
  • the photoresist 204 may also be a DUV or EUV (deep ultraviolet or extreme ultraviolet) photoresist.
  • the photoresist 204 may be formed by any suitable process.
  • the photoresist 204 may be formed via a patterned etch process or spin coating process.
  • the photoresist 204 may be formed via a spacer mask patterning technique, such as a self-aligned double patterning process (SADP).
  • SADP self-aligned double patterning process
  • the layer 202 may be any type of layer suitable for semiconductor device fabrication, for example, a mask layer, a hard mask layer, or the like.
  • the layer 202 may comprise at least one of oxides, such as silicon dioxide (S1O2), silicon oxynitride (SiON), or the like, or nitrides, such as titanium nitride (TiN), silicon nitride (SiN), or the like, silicides, such as titanium silicide (TiSi), nickel silicide (NiSi) or the like, or silicates, such as aluminum silicate (AlSiO), zirconium silicate (ZrSiO), hafnium silicate (HfSiO), or the like.
  • one or more features may be formed in the layer 202, for example such as the features 208 formed in the layer 202 through the photoresist 204, such as shown in
  • the substrate 200 is moved to a cleaning chamber for cleaning.
  • the cleaning chamber may be any type of chamber suitable to perform the process having a plurality of filaments.
  • the cleaning chamber may be a hot wire processing chamber (e.g., a hot wire chemical vapor deposition (HWCVD) chamber or other suitable process chamber having a hot wire source), for example, such as the process chamber described below.
  • HWCVD hot wire chemical vapor deposition
  • a higher density population of atomic hydrogen (e.g., such as 1 .3 to about 3 times higher) may be produced, as compared to methods or systems conventionally used in the semiconductor industry to produce atomic hydrogen [e.g., such as RF and/or DC plasma or inductively coupled plasma systems).
  • a hydrogen containing gas may be provided to a process chamber having a plurality of filaments ⁇ e.g., a first process chamber).
  • the process chamber having a plurality of filaments may be the cleaning chamber described above, or alternatively, a separate chamber.
  • the resultant hydrogen atoms may be then provided to the cleaning chamber.
  • the hydrogen containing gas may comprise any gas or gases suitable to provide a high density of atomic hydrogen when decomposed.
  • the hydrogen containing gas may comprise or may consist essentially of or may consist of hydrogen (H 2 ) gas, a mixture of hydrogen (H 2 ) gas and nitrogen (N 2 ) gas, ammonia (NH 3 ), hydrogen peroxide (H2O2), combinations thereof, or the like.
  • the hydrogen containing pre-treat gas may further comprise a dilutant gas, for example such as one or more of helium (He), Argon (Ar), or the like.
  • the hydrogen containing gas may be provided at any flow rate suitable to provide a needed amount of atomic hydrogen to remove the photoresist 204 from the substrate 200 and may be adjusted in accordance with the substrate 200 and/or process chamber size.
  • the hydrogen containing gas may be provided at a flow rate of up to about 10,000 seem, or in some embodiments, about 200 seem to about 1000 seem.
  • a current is flowed through the plurality of filaments disposed in the process chamber to raise a temperature of the plurality of filaments to a first temperature sufficient to at least partially decompose the hydrogen containing gas.
  • the current may be flowed through the plurality of filaments prior to, at the same time as, and/or subsequent to preheating the substrate (described above at 102) and/or providing the hydrogen containing gas to the process chamber (described above at 104).
  • the plurality of filaments may be heated to the first temperature at least prior to providing the hydrogen containing gas.
  • heating the plurality of filaments to the first temperature may reduce or eliminate contaminants from the plurality of filaments, thereby reducing or eliminating particle formation.
  • pre-treating may eliminate impurities, thereby increasing the stability and/or reliability, and extending the useful life of the plurality of filaments.
  • the plurality of filaments may be any suitable type of filaments disposed in any suitable type of process chamber, for example such as the plurality of filaments disposed in the process chamber described below with respect to Figures 3 and 4.
  • the first temperature may be any temperature suitable to achieve decomposition of the hydrogen containing gas to provide a desired density of atomic hydrogen and to facilitate removing the photoresist 204 from the substrate 200, as described below.
  • the first temperature may be up to about 2000 degrees Celsius, or in some embodiments, about 1200 to about 2000 degrees Celsius. Other process-compatible temperatures may be used as appropriate for the substrate and the photoresist to be removed.
  • the photoresist 204 is removed from the substrate 200 by exposing the substrate 200 to the hydrogen atoms formed from the decomposition of the hydrogen containing gas for a period of time.
  • the highly reactive properties of atomic hydrogen facilitate removal of the photoresist 204, thereby removing the photoresist from the substrate 200, as shown in Figure 2B.
  • the inventors have observed that by using atomic hydrogen to remove the photoresist, the photoresist may be completely and uniformly removed without leaving any residues, or damaging or oxidizing the surfaces of the substrate 200, as compared to a conventional photoresist removal processes such as processes utilizing a plasma and/or a wet cleaning chemistry.
  • atomic hydrogen allows for the complete removal of photoresist in applications where conventional photoresist processes would not be sufficient, for example, in smaller device node ⁇ e.g., less than 40 nm, such as 20n nm or smaller device nodes) applications.
  • the inventors have also observed that removing the photoresist utilizing hydrogen radicals, the photoresist may volatilize the photoresist materials during removal, thereby leaving no residues, thus providing a dry photoresist removal process.
  • the period of time may be any amount of time needed to facilitate removal of the photoresist 204 to a satisfactory degree ⁇ e.g., completely removed, substantially removed, or the like) and may be varied in accordance to the composition of the photoresist 204, the substrate 200 size, or the like.
  • the substrate 200 may be exposed to the atomic hydrogen for a period of time of about 60 to about 600 seconds.
  • at least one of the first temperature or period of time may be dependent on the materials used to fabricate the filaments and/or the configuration of the plurality of filaments within the process chamber.
  • the substrate 200 is disposed beneath, and directly exposed to, the plurality of filaments in the process chamber.
  • the substrate 200 may be separated from the plurality of filaments.
  • a plate having a plurality of apertures e.g., a gas distribution plate
  • the plate may further allow for independent temperature control of the portion of the chamber having the plurality of filaments disposed therein and the portion of the chamber having the substrate 200 disposed therein, thereby allowing each of the plurality of filaments and the substrate to be maintained at different temperatures, as described below.
  • the atomic hydrogen may be formed remotely in a process chamber having a plurality of heated filaments or wires ⁇ e.g., a hot wire processing chamber) and provided to a separate process chamber ⁇ e.g., a cleaning chamber) having the substrate 200 disposed therein.
  • the substrate 200 may be positioned under the hot wire source, or under the plate 342, on a substrate support ⁇ e.g., substrate support 328 described below with respect to Figure 3) in a static position or, in some embodiments, movably for dynamic cleaning as the substrate 200 passes under the plate 342.
  • a substrate support e.g., substrate support 328 described below with respect to Figure 3
  • additional process parameters may be utilized to facilitate removing the photoresist 204 from the substrate 200.
  • the density of atomic hydrogen produced may be controlled by the pressure within the process chamber containing the substrate 200 ⁇ e.g. the process chamber or separate cleaning chamber).
  • the process chamber may be maintained at a pressure of less than about 10 "9 mTorr ⁇ e.g., an ultra high vacuum) to about 10 Torr.
  • the substrate 200 may be maintained at any temperature suitable to facilitate cleaning the structures of the substrate 200, for example, about 10 to about 500 degrees Celsius.
  • the substrate 200 may be maintained at the aforementioned temperature via any suitable heating mechanism or heat source, for example, such as resistive heaters (e.g., a heater embedded within a substrate support) heating lamps, or the like.
  • the temperature may be monitored via any mechanism suitable to provide an accurate measurement of the temperature.
  • the temperature may be monitored directly via one or more thermocouples, pyrometers, combinations thereof, or the like.
  • the temperature may be estimated via a known correlation between a power provided to the heating mechanism and the resultant temperature. The inventors have observed that maintaining the substrate 200 at such temperatures provides additional energy to the process, which may facilitate a more complete decomposition of the hydrogen containing gas to form hydrogen atoms, thereby increasing the throughput and uniformity of the cleaning process.
  • the method 100 After removing the photoresist 204 from the substrate 200 at 108, the method 100 generally ends and the substrate 200 may proceed for further processing.
  • additional processes such as additional layer depositions, etching, annealing, or the like, may be performed on the substrate 200.
  • the additional processes may be performed in the same, or in a different, process chamber than the process chamber utilized in the process described above.
  • FIG. 3 depicts a schematic side view of a processing system 300 in accordance with embodiments of the present invention.
  • the system 300 includes a process chamber 301 (e.g., the first process chamber), a cleaning chamber 303 and, optionally, a preheat chamber 350.
  • the process chamber 301 may be any type of process chamber having a plurality of filaments disposed therein, for example, such as a hot wire processing chamber (e.g., a hot wire chemical vapor deposition (HWCVD) chamber or other suitable chamber having a hot wire source).
  • the process chamber 301 generally comprises a chamber body 302 having an internal processing volume 304 with an atomic hydrogen source 348 disposed therein.
  • the atomic hydrogen source 348 is configured to provide atomic hydrogen to the surface of a substrate 330 (e.g., the substrate described above) during operation.
  • the atomic hydrogen source includes a plurality of filaments (wires) 31 1 coupled to a power source 313 for providing current to heat the plurality of filaments to a temperature sufficient to produce atomic hydrogen from a hydrogen gas, provided for example, from a hydrogen gas source 346.
  • the plurality of filaments (wires) 31 1 may be separate wires, or may be a single wire routed back and forth across the internal processing volume 304.
  • the wires 31 1 may have any suitable conductive material, for example, such tungsten, tantalum, iridium, nickel-chrome, palladium, or the like.
  • the wires 31 1 may comprise any thickness and/or density suitable to provide a desired density of atomic hydrogen within the process chamber 301 .
  • each wire 31 1 may have a diameter of about 0.5 mm to about 10 mm.
  • the density of each wire may be varied dependent on the application ⁇ e.g., substrate composition, material to be removed, or the like).
  • each wire 31 1 is clamped in place by support structures to keep the wire taught when heated to high temperature, and to provide electrical contact to the wire.
  • a distance between each wire 31 1 i.e., the wire to wire distance 336) may be varied to provide a desired density of atomic hydrogen within the process chamber 301 in accordance with a particular application.
  • the wire to wire distance 336 may be about 5 mm to about 80 mm.
  • a power source 313 is coupled to the wires 31 1 to provide current to heat the wires 31 1 .
  • the substrate 330 may be positioned under the hot wire source (e.g., the wires 31 1 ), for example, on a substrate support 328 disposed within the cleaning chamber 303.
  • the substrate support 328 may be stationary for static cleaning, or may move (as shown by arrow 354) for dynamic cleaning as the substrate 330 passes under the hot wire source.
  • a distance between each wire 31 1 and the substrate 330 i.e., the wire to substrate distance 340
  • the wire to substrate distance 340 may be varied to facilitate a particular process (e.g. the inventive method 100 described above) being performed in the process chamber 301 .
  • the wire to substrate distance 340 may be about 10 mm to about 300 mm.
  • the chamber body 302 further includes one or more gas inlets (one gas inlet 332 shown) coupled to a hydrogen gas source 346 to provide the cleaning gas and one or more outlets (two outlets 334 shown) to a vacuum pump to maintain a suitable operating pressure within the process chamber 301 and to remove excess process gases and/or process byproducts.
  • the gas inlet 332 may feed into a shower head 333 (as shown), or other suitable gas distribution element, to distribute the gas uniformly, or as desired, over the wires 31 1 .
  • the substrate 330 may be separated from the hot wire source ⁇ e.g., the wires 31 1 ), via a gas distribution apparatus 341 , for example, such as a plate 342 having a plurality of through holes 344 configured to distribute the gas (e.g. the atomic hydrogen described above) in a desired manner to the substrate 330.
  • a gas distribution apparatus 341 for example, such as a plate 342 having a plurality of through holes 344 configured to distribute the gas (e.g. the atomic hydrogen described above) in a desired manner to the substrate 330.
  • the number of through holes, patterns and dimensions of the plurality of through holes 344 may be varied in accordance with the particular application.
  • the plurality of through holes 344 may be configured such that the plate 342 may have about 10% to about 50% open area.
  • each of the plurality of through holes may have a diameter of about 1 mm to about 30 mm.
  • the plate 342 may prevent one or more of the wires 31 1 from contacting the substrate 330 in the event of a mechanical failure of the wires 31 1 .
  • a distance 331 from the gas distribution apparatus 341 to the substrate 330 may be any distance suitable to provide a desired density of atomic hydrogen to the substrate 330.
  • the gas distribution apparatus 341 to substratel may be about 10 to about 200 mm.
  • the cleaning chamber 303 generally comprises a chamber body 305 defining an inner volume 307.
  • the substrate support 328 may be positioned within the inner volume 307.
  • the cleaning chamber 303 may comprise one or more heaters (not shown) to facilitate heating the substrate.
  • the one or more heaters disposed in the cleaning chamber 303 may facilitate pre-heating the substrate, for example, such as described above.
  • one or more shields 320 may be provided to minimize unwanted deposition of materials on interior surfaces of the chamber body 305.
  • the shields 320 and chamber liners 322 generally protect the interior surfaces of the chamber body 305 from undesirably collecting deposited materials due to the cleaning process and/or process gases flowing in the chamber.
  • the shields 320 and chamber liners 322 may be removable, replaceable, and/or cleanable.
  • the shields 320 and chamber liners 322 may be configured to cover every area of the chamber body 305 that could become coated, including but not limited to, around the wires 31 1 and on all walls of the coating compartment.
  • the shields 320 and chamber liners 322 may be fabricated from aluminum (Al) and may have a roughened surface to enhance adhesion of deposited materials (to prevent flaking off of deposited material).
  • the shields 320 and chamber liners 322 may be mounted in the desired areas of the process chamber, such as around the hot wire source, in any suitable manner.
  • the source, shields, and liners may be removed for maintenance and cleaning by opening an upper portion of the process chamber 301 .
  • the a lid, or ceiling, of the process chamber 301 may be coupled to the chamber body 302 along a flange 338 that supports the lid and provides a surface to secure the lid to the body of the process chamber 301 .
  • a preheat chamber 350 may be provided to preheat the substrate.
  • the preheat chamber may be any suitable chamber having a heat source 352 for providing heat to the substrate 330 disposed in the preheat chamber 350.
  • the preheat chamber 350 may be coupled directly to the process chamber 301 , for example as part of an inline substrate processing tool, or may be coupled to the process chamber 301 via one or more intervening chambers, such as a transfer chamber of a cluster tool.
  • An example of a suitable inline substrate processing tool is described in US Patent Application Publication 201 1/0104848A1 , by D. Haas, et al., published May 5, 201 1 , now US Patent 8,1 17,987, issued February 21 , 2012.
  • a controller 306 may be coupled to various components of the system 300, such as at the process chamber 301 , cleaning chamber 303, or the preheat chamber 350, to control the operation thereof. Although schematically shown coupled to the system 300, the controller may be operably connected to any component that may be controlled by the controller, such as the power source 313, a gas supply (not shown) coupled to the inlet 332, a vacuum pump and or throttle valve (not shown) coupled to the outlet 334, the substrate support 328, and the like, in order to control the cleaning process in accordance with the methods disclosed herein.
  • the controller 306 generally comprises a central processing unit (CPU) 308, a memory 312, and support circuits 310 for the CPU 308.
  • CPU central processing unit
  • the controller 306 may control the system 300 directly, or via other computers or controllers (not shown) associated with particular support system components.
  • the controller 306 may be one of any form of general-purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors.
  • the memory, or computer-readable medium, 312 of the CPU 308 may be one or more of readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, flash, or any other form of digital storage, local or remote.
  • the support circuits 310 are coupled to the CPU 308 for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry and subsystems, and the like.
  • Inventive methods as described herein may be stored in the memory 312 as software routine 314 that may be executed or invoked to turn the controller into a specific purpose controller to control the operation of the process chamber 301 in the manner described herein.
  • the software routine may also be stored and/or executed by a second CPU (not shown) that is remotely located from the hardware being controlled by the CPU 308.
  • the process chamber 301 and the cleaning chamber 303 may be coupled to one another or constructed integrally with one another to form a unitary process chamber ⁇ e.g., such as shown in Figure 3).
  • the process chamber 301 and the cleaning chamber 303 may be separate chambers, such as shown in Figure 4.
  • the process gas ⁇ e.g., the hydrogen containing gas
  • the conduit 402 may provide the atomic hydrogen to a cavity or plenum 404 disposed above the gas distribution apparatus 341 and then distributed to the inner volume 307 of the cleaning chamber 303 via the plurality of through holes 344.
  • inventive methods for removing photoresist from substrates are provided herein.
  • the inventive methods described herein advantageously facilitate the removal ⁇ e.g., ashing or cleaning) of a photoresist from a substrate while causing less damage to the substrate or oxidation of layers formed thereon as compared to conventional cleaning processes ⁇ e.g., using one or more of a plasma, a high temperature treatment, a wet cleaning process, or a fluorine based chemistry).

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention concerne des procédés qui permettent d'éliminer de la photorésine d'un substrat. Dans certains modes de réalisation, un procédé pour éliminer de la photorésine d'un substrat peut consister : à amener un gaz contenant de l'hydrogène dans une première chambre dans laquelle se trouve une pluralité de filaments ; à faire passer un courant à travers la pluralité de filaments pour élever une température de la pluralité de filaments à une première température suffisante pour décomposer au moins une partie du gaz contenant de l'hydrogène afin que soient formés des atomes d'hydrogène ; et à éliminer une photorésine de la surface du substrat par exposition dudit substrat aux atomes d'hydrogène formés par la décomposition du gaz contenant de l'hydrogène.
PCT/US2014/022586 2013-03-12 2014-03-10 Procédés pour éliminer de la photorésine sur des substrats avec de l'hydrogène atomique Ceased WO2014164493A1 (fr)

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Cited By (1)

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CN114815532A (zh) * 2022-04-19 2022-07-29 度亘激光技术（苏州）有限公司 光刻胶去除方法及半导体器件制造方法

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US20070089761A1 (en) * 2005-10-21 2007-04-26 Souvik Banerjee Non-plasma method of removing photoresist from a substrate
US20070227556A1 (en) * 2006-04-04 2007-10-04 Bergman Eric J Methods for removing photoresist
JP2010258047A (ja) * 2009-04-21 2010-11-11 Tohoku Univ レジスト膜除去装置及びレジス膜除去方法
US20110217848A1 (en) * 2010-03-03 2011-09-08 Bergman Eric J Photoresist removing processor and methods

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Publication number Priority date Publication date Assignee Title
US20040087169A1 (en) * 1999-12-28 2004-05-06 Kabushiki Kaisha Toshiba Dry etching method and semiconductor device manufacturing method
US20070089761A1 (en) * 2005-10-21 2007-04-26 Souvik Banerjee Non-plasma method of removing photoresist from a substrate
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CN114815532B (zh) * 2022-04-19 2023-11-07 度亘激光技术（苏州）有限公司 光刻胶去除方法及半导体器件制造方法

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