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WO2014158035A1 - Résonateur dote d'un capteur de température intégré - Google Patents

Résonateur dote d'un capteur de température intégré Download PDF

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Publication number
WO2014158035A1
WO2014158035A1 PCT/NZ2014/000055 NZ2014000055W WO2014158035A1 WO 2014158035 A1 WO2014158035 A1 WO 2014158035A1 NZ 2014000055 W NZ2014000055 W NZ 2014000055W WO 2014158035 A1 WO2014158035 A1 WO 2014158035A1
Authority
WO
WIPO (PCT)
Prior art keywords
resonating element
substrate
diode device
integrated resonator
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/NZ2014/000055
Other languages
English (en)
Inventor
Brent John Robinson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rakon Ltd
Original Assignee
Rakon Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rakon Ltd filed Critical Rakon Ltd
Publication of WO2014158035A1 publication Critical patent/WO2014158035A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/02—Details
    • H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H03H9/0552—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement the device and the other elements being mounted on opposite sides of a common substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H03H9/0557—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement the other elements being buried in the substrate

Definitions

  • This invention relates to electronic resonators and in particular to integrating a resonating element with a semiconductor temperature sensing element such as a silicon diode to form a resonator with an integrated and closely thermally coupled temperature sensor.
  • Resonators such as, for example, quartz crystal resonators
  • quartz crystal resonators are used in a number of applications as an alternative to temperature compensated oscillators.
  • compensation for frequency changes due to changing ambient temperature is done computationally by the application system software.
  • Such computational temperature compensation necessitates the ability to accurately sense the resonator's temperature.
  • Early implementations involved installing temperature sensing components such as thermistors on the system PCB in close vicinity of the resonator.
  • the temperature differential between the resonator and the temperature sensing component results in significant computational temperature compensation errors, the latter increasing at higher rates of ambient temperature change.
  • Various packaging solutions have been deployed aiming at bringing the resonator and the temperature sensing component closer in spatial and thermal sense. These solutions usually utilise an aluminium oxide ceramic package housing both the resonator and the temperature sensing component.
  • Semiconductor diodes can be used as temperature sensing components as an alternative to thermistors.
  • the present invention offers an alternative to using a ceramic package to house a resonator and a diode: in the present invention the unpackaged diode die itself becomes part of the package carrying and encompassing the resonator.
  • Such a structure offers a closer thermal connection between the resonator and the diode, thus significantly reducing the temperature differential between the two elements.
  • the invention may broadly be said to consist of an integrated resonator plus diode device comprising:
  • a semiconductor substrate with two main surfaces and at least one diode, or a circuit functionally equivalent to a diode, formed on one of the said two main surfaces of the said substrate, a resonating element closely associated with, and mounted on one of the said two main surfaces of the said substrate,
  • diode circuitry and the resonating element are electrically connected to at least some of the said electrically conductive elements and wherein at least some of the electrical connections are formed through electrically conductive vias traversing through the substrate.
  • the said multiplicity of electrically conductive elements are formed on the surface of the substrate opposing the surface on which the resonating element is mounted.
  • each substrate via is a through silicon via (TSV).
  • TSV through silicon via
  • the resonating element is a quartz crystal resonating element.
  • the resonating element can be of another known type, for example a MEMS resonator, a Bulk Acoustic Wave resonating element, an AT-cut crystal resonating element, an SC-cut crystal resonating element, a High Frequency Fundamental crystal resonating element, a surface Acoustic Wave resonating element, or a Tuning Fork crystal resonating element.
  • the said circuit functionally equivalent to a diode is comprised of a suitably configured transistor network intended for temperature sensing.
  • the resonating element is housed in a hermetically sealed space formed by mounting a cap onto the surface of the substrate that the resonating element is mounted on.
  • the substrate with the mounted resonating element can be installed in a single-cavity enclosing ceramic package, with the cavity hermetically sealed by a lid.
  • the diode circuitry is formed on the same substrate surface that the resonator element is mounted on.
  • the diode circuitry can be formed on the opposing surface of the substrate - in this case the number of TSVs required for electrical connections to the external conductive elements is reduced.
  • Figure 1 shows a first embodiment of the invention.
  • Figure 2 shows a second embodiment of the invention.
  • Figure 3 shows a third embodiment of the invention.
  • Figure 4 shows a fourth embodiment of the invention.
  • a diode (or a semiconductor circuit functionally equivalent to a diode) (1) is formed in the upper surface of a silicon substrate (2).
  • Resonating element mounting pads (3) are formed on the same substrate surface and a resonating element (4) is mounted onto the substrate (2) utilising conductive glue (6) to electrically connect the mounting pads (3) and the resonating element (4).
  • a silicon cap (5) attached to the substrate (2) is used to form, in conjunction with the substrate (2), a hermetically sealed enclosure for the resonating element (4).
  • User access pads (8) are formed on the other (lower) surface of the substrate (2) and through silicon vias (7) are used to electrically connect the resonating element (4) and the diode (1) to the user access pads (8).
  • FIG. 1 A second preferred embodiment of the invention is shown in Figure 2.
  • This embodiment comprises essentially the same constituent components as the embodiment shown in Figure 1.
  • the main difference with the second embodiment is that the diode (or the semiconductor circuit functionally equivalent to a diode) (1) is formed on the surface of the silicon substrate (2) that is opposed to the surface onto which the resonating element (4) is mounted.
  • the advantage of the second embodiment compared to the first one is that it does not require TSVs to connect the diode circuit (1) to the user access pads (8), thus reducing the number of TSVs (7) required to be made.
  • the trade off, however, is in a reduced thermal coupling between the resonating element (4) and the temperature sensing diode (1) compared to that in the first preferred embodiment of Figure 1.
  • the substrate (2) with the mounted resonating element (4) as in Figure 1 are placed in a cavity of a ceramic package (14) and a lid (15) is utilized to hermetically seal the said cavity.
  • conductive pads (9) formed on the lower surface of substrate (2), conductive pads (10) formed on the inner surface of the ceramic package (14) and conductive balls (12) are utilised in a way well known in the art.
  • This embodiment maintains the close thermal coupling between the resonating element (4) and the temperature sensing diode (1) which is characteristic of the first preferred embodiment, but it lends itself better to a singularised units process flow rather than a wafer processing flow preferable for producing devices of the first embodiment.
  • the substrate (2) with the mounted resonating element (4) as in Figure 2 are placed in a cavity of a ceramic package (14) and a lid (15) is utilized to hermetically seal the said cavity.
  • conductive pads (9) formed on the lower surface of substrate (2), conductive pads (10) formed on the inner surface of the ceramic package (14) and conductive balls (12) are utilised in a way well known in the art.
  • This embodiment maintains the close thermal coupling between the resonating element (4) and the temperature sensing diode (1) which is characteristic of the second preferred embodiment, but it lends itself better to a singularised units process flow rather than a wafer processing flow preferable for producing devices of the second embodiment.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

La présente invention concerne une diode (ou un circuit à semi-conducteur équivalent fonctionnellement à une diode) qui est formée dans la surface supérieure d'un substrat de silicium. Des coussins de montage d'élément de résonance sont formés sur la même surface de substrat et un élément de résonance est monté sur le substrat à l'aide de colle conductrice afin de connecter électriquement les coussins de montage et l'élément de résonance. Un bouchon de silicium fixé au substrat est utilisé pour former, conjointement avec le substrat, une enceinte fermée hermétiquement pour l'élément de résonance. Des coussins d'accès d'utilisateur sont formés sur l'autre surface (inférieure) du substrat et des trous traversants en silicium sont utilisés pour connecter électriquement l'élément de résonance et la diode aux coussins d'accès d'utilisateur.
PCT/NZ2014/000055 2013-03-28 2014-03-28 Résonateur dote d'un capteur de température intégré Ceased WO2014158035A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NZ60882013 2013-03-28
NZ608820 2013-03-28

Publications (1)

Publication Number Publication Date
WO2014158035A1 true WO2014158035A1 (fr) 2014-10-02

Family

ID=51624869

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/NZ2014/000055 Ceased WO2014158035A1 (fr) 2013-03-28 2014-03-28 Résonateur dote d'un capteur de température intégré

Country Status (1)

Country Link
WO (1) WO2014158035A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112511129A (zh) * 2020-12-02 2021-03-16 赛莱克斯微系统科技（北京）有限公司 一种薄膜体声波谐振器的气密封装结构及其制备方法
WO2025211167A1 (fr) * 2024-04-05 2025-10-09 株式会社大真空 Dispositif vibreur piézoélectrique

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4107629A (en) * 1977-05-16 1978-08-15 General Electric Company Temperature compensator for a crystal oscillator
US4851791A (en) * 1987-09-29 1989-07-25 Compagnie D'electronique Et De Piezoelectricite - C.E.P.E. Temperature-compensated piezoelectric oscillator
US7378781B2 (en) * 2005-09-07 2008-05-27 Nokia Corporation Acoustic wave resonator with integrated temperature control for oscillator purposes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4107629A (en) * 1977-05-16 1978-08-15 General Electric Company Temperature compensator for a crystal oscillator
US4851791A (en) * 1987-09-29 1989-07-25 Compagnie D'electronique Et De Piezoelectricite - C.E.P.E. Temperature-compensated piezoelectric oscillator
US7378781B2 (en) * 2005-09-07 2008-05-27 Nokia Corporation Acoustic wave resonator with integrated temperature control for oscillator purposes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112511129A (zh) * 2020-12-02 2021-03-16 赛莱克斯微系统科技（北京）有限公司 一种薄膜体声波谐振器的气密封装结构及其制备方法
WO2025211167A1 (fr) * 2024-04-05 2025-10-09 株式会社大真空 Dispositif vibreur piézoélectrique

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