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WO2014035899A8 - A method of controlling the switched mode ion energy distribution system - Google Patents

A method of controlling the switched mode ion energy distribution system Download PDF

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Publication number
WO2014035899A8
WO2014035899A8 PCT/US2013/056659 US2013056659W WO2014035899A8 WO 2014035899 A8 WO2014035899 A8 WO 2014035899A8 US 2013056659 W US2013056659 W US 2013056659W WO 2014035899 A8 WO2014035899 A8 WO 2014035899A8
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
periodic voltage
voltage function
controlling
distribution system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2013/056659
Other languages
French (fr)
Other versions
WO2014035899A1 (en
Inventor
Victor Brouk
Daniel J. Hoffman
Daniel Carter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Energy Industries Inc
Original Assignee
Advanced Energy Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/597,050 external-priority patent/US9362089B2/en
Application filed by Advanced Energy Industries Inc filed Critical Advanced Energy Industries Inc
Priority to KR1020157007771A priority Critical patent/KR101952563B1/en
Priority to CN201380056070.2A priority patent/CN104782233B/en
Priority to JP2015529906A priority patent/JP6329543B2/en
Publication of WO2014035899A1 publication Critical patent/WO2014035899A1/en
Publication of WO2014035899A8 publication Critical patent/WO2014035899A8/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)

Abstract

Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.
PCT/US2013/056659 2012-08-28 2013-08-26 A method of controlling the switched mode ion energy distribution system Ceased WO2014035899A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020157007771A KR101952563B1 (en) 2012-08-28 2013-08-26 A method of controlling the switched mode ion energy distribution system
CN201380056070.2A CN104782233B (en) 2012-08-28 2013-08-26 The method of control switch mode ion energy distribution system
JP2015529906A JP6329543B2 (en) 2012-08-28 2013-08-26 Method for controlling a switched-mode ion energy distribution system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/597,050 US9362089B2 (en) 2010-08-29 2012-08-28 Method of controlling the switched mode ion energy distribution system
US13/597,050 2012-08-28

Publications (2)

Publication Number Publication Date
WO2014035899A1 WO2014035899A1 (en) 2014-03-06
WO2014035899A8 true WO2014035899A8 (en) 2014-06-19

Family

ID=50184210

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2013/056659 Ceased WO2014035899A1 (en) 2012-08-28 2013-08-26 A method of controlling the switched mode ion energy distribution system

Country Status (4)

Country Link
JP (1) JP6329543B2 (en)
KR (1) KR101952563B1 (en)
CN (1) CN104782233B (en)
WO (1) WO2014035899A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12505980B2 (en) 2009-05-01 2025-12-23 Advanced Energy Industries, Inc. Apparatus to produce a waveform
US10312048B2 (en) * 2016-12-12 2019-06-04 Applied Materials, Inc. Creating ion energy distribution functions (IEDF)
KR20180077392A (en) * 2016-12-28 2018-07-09 삼성전자주식회사 apparatus for processing plasma and method for manufacturing semiconductor device using the same
US10396601B2 (en) 2017-05-25 2019-08-27 Mks Instruments, Inc. Piecewise RF power systems and methods for supplying pre-distorted RF bias voltage signals to an electrode in a processing chamber
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
KR102877884B1 (en) * 2017-11-17 2025-11-04 에이이에스 글로벌 홀딩스 피티이 리미티드 Improved Application of Modulation Supplies in Plasma Processing Systems
JP7289313B2 (en) * 2017-11-17 2023-06-09 エーイーエス グローバル ホールディングス， プライベート リミテッド Spatial and temporal control of ion bias voltage for plasma processing
NL2022999B1 (en) * 2019-04-24 2020-11-02 Prodrive Tech Bv Voltage waveform generator for plasma processing apparatuses
JP7234036B2 (en) 2019-05-28 2023-03-07 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
NL2023935B1 (en) 2019-10-02 2021-05-31 Prodrive Tech Bv Determining an optimal ion energy for plasma processing of a dielectric substrate
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60126832A (en) * 1983-12-14 1985-07-06 Hitachi Ltd Dry etching method and device thereof
JPS62125626A (en) * 1985-11-27 1987-06-06 Hitachi Ltd dry etching equipment
US6201208B1 (en) * 1999-11-04 2001-03-13 Wisconsin Alumni Research Foundation Method and apparatus for plasma processing with control of ion energy distribution at the substrates
JP4319514B2 (en) * 2002-11-29 2009-08-26 株式会社日立ハイテクノロジーズ Plasma processing apparatus having high frequency power supply with sag compensation function
US7615132B2 (en) * 2003-10-17 2009-11-10 Hitachi High-Technologies Corporation Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method
US7838430B2 (en) * 2003-10-28 2010-11-23 Applied Materials, Inc. Plasma control using dual cathode frequency mixing
US8475673B2 (en) * 2009-04-24 2013-07-02 Lam Research Company Method and apparatus for high aspect ratio dielectric etch
US9287086B2 (en) * 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US9287092B2 (en) * 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
US9435029B2 (en) * 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
CN201465987U (en) * 2009-07-03 2010-05-12 中微半导体设备(上海)有限公司 Plasma treatment device
CN101835334B (en) * 2010-01-19 2013-01-30 大连理工大学 A Control Method for Resonant Coupling of Cross-Field Discharge

Also Published As

Publication number Publication date
KR20150047599A (en) 2015-05-04
KR101952563B1 (en) 2019-02-27
CN104782233B (en) 2018-12-25
WO2014035899A1 (en) 2014-03-06
CN104782233A (en) 2015-07-15
JP6329543B2 (en) 2018-05-23
JP2015534718A (en) 2015-12-03

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