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WO2014023740A1 - Module de diodes électroluminescentes organiques et son procédé de fabrication - Google Patents

Module de diodes électroluminescentes organiques et son procédé de fabrication Download PDF

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Publication number
WO2014023740A1
WO2014023740A1 PCT/EP2013/066500 EP2013066500W WO2014023740A1 WO 2014023740 A1 WO2014023740 A1 WO 2014023740A1 EP 2013066500 W EP2013066500 W EP 2013066500W WO 2014023740 A1 WO2014023740 A1 WO 2014023740A1
Authority
WO
WIPO (PCT)
Prior art keywords
emitting diode
carrier substrate
diode module
organic light
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2013/066500
Other languages
German (de)
English (en)
Inventor
Simon SCHICKTANZ
Erwin Lang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2014023740A1 publication Critical patent/WO2014023740A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/88—Terminals, e.g. bond pads

Definitions

  • the invention relates to a light-emitting diode module which has an organic light-emitting active layer sequence.
  • OLEDs Organic light emitting diodes
  • a constant current driver is usually used, i. H. an electronic component or an electronic
  • Circuit which generates a constant current for operation of the organic light-emitting diode from a mains voltage or from a voltage delivered by a ballast.
  • Such constant current drivers or other electronic components for controlling organic light emitting diode modules are usually arranged on separate circuit boards and electrically connected to the organic light emitting diode module with a Greiermaschine, for example by means of bonding or spring contacts.
  • An object to be solved is to provide an improved organic light emitting diode module, which
  • an advantageous method for producing the organic light emitting diode module is to be specified.
  • the organic light-emitting diode module comprises a carrier substrate which has a first
  • the functional layer stack comprises a first electrode layer, an organic active layer sequence and a second one
  • the organic active layer sequence has at least one organic light-emitting layer.
  • the organic active layer sequence is between the first electrode layer and the second electrode layer
  • the first electrode layer can be arranged, for example, on the side of the active layer sequence facing the carrier substrate and form the anode.
  • Electrode layer for example, on the of
  • Carrier substrate remote second electrode layer is preferably for the of the active layer sequence
  • the organic light-emitting diode module can light into one of the carrier substrate emit the opposite direction.
  • a light-emitting diode module is also referred to as a top emitter.
  • the carrier substrate is transparent, so that at least a part of the emitted light through the carrier substrate
  • Carrier substrate at least one via
  • the at least one via can, in particular, pass through the carrier substrate
  • the carrier substrate itself advantageously has a
  • electrically insulating material in particular a
  • connection with the functional layer stack is electrically connected.
  • the first electrode layer of the functional layer stack can be connected by means of the through-connection to at least one conductor track on the second main surface of the carrier substrate.
  • At least one electronic component for controlling the functional layer stack is furthermore arranged on the second main surface of the carrier substrate.
  • the electronic component is electrically conductive by means of the conductor tracks
  • Electrode layers of the functional layer stack connected. It is possible that in addition one or more electronic components are arranged on the first main surface of the carrier substrate. In the case of the organic light-emitting diode module described here, the functional layer stack and the at least one electronic component for driving the functional layer stack are advantageously on opposite sides
  • the at least one electronic component is in particular not arranged on a separate printed circuit board, so that it is advantageously possible to dispense with connecting wires between a separate printed circuit board and the carrier substrate of the functional layer stack. Rather, the electrical connection between the at least one electronic component and the functional layer stack is advantageously effected by means of the at least one through-connection through the carrier substrate. In this way is advantageous
  • the at least one electronic component is preferably used as a constant current driver for the operation of the functional
  • the constant-current driver can also be realized by a plurality of electronic components, which are arranged on the second main surface of the carrier substrate and interconnected by means of the conductor tracks.
  • Supply voltage such as a mains voltage or to a voltage supplied by a power supply, be connected.
  • a plurality of electronic components are arranged on the second main surface of the carrier substrate.
  • a constant-current driver for the functional layer stack can be realized by a circuit having a plurality of electronic components.
  • Constant current driver further electronic components are arranged on the second main surface of the carrier substrate. This may, for example, be a logical one
  • the plurality of electronic components on the second main surface of the carrier substrate are advantageously contacted via the conductor tracks and optionally interconnected.
  • the carrier substrate is preferably a printed circuit board.
  • the carrier substrate may, for example, as a rigid circuit board be executed, for example, contains FR4 or a liquid crystalline plastic (LCP).
  • the printed circuit board is a flexible printed circuit board, which may in particular comprise a polyimide such as Kapton. Such a flexible printed circuit board is also referred to as Flex-PCB.
  • At least the functional layer stack is provided with an encapsulation layer. Due to the encapsulation layer of the
  • the encapsulation layer is preferably a so-called thin-film encapsulation, which is formed from one or more thin layers.
  • Thin-film encapsulation layers are known, for example, from the publications WO 2009/095006 Al and WO 2010/108894 Al, their respective
  • the individual layers of the thin-film encapsulation may each have a thickness between an atomic layer and about 1 ⁇ m.
  • the total thickness of the encapsulation layer is for example less than 10 ⁇ m, less than 1 ⁇ m or even less than 100 nm.
  • the thin-film encapsulation preferably contains one or more metal oxide layers. Preferably, all exposed surfaces of the thin-film encapsulation
  • the encapsulation layer is advantageously produced by means of plasma-assisted chemical vapor deposition (PE-CVD).
  • PE-CVD plasma-assisted chemical vapor deposition
  • ALD Atomic layer deposition
  • MLD molecular deposition
  • thermal evaporation applied.
  • the at least one electronic component is also provided with the encapsulation layer. In this way it is achieved that the
  • Encapsulation layer provided.
  • exposed surfaces are those surfaces of the carrier substrate, of the functional layer stack and of the at least one electronic component which, apart from the encapsulation layer, are not directly adjacent to further layers of the light-emitting diode module.
  • the encapsulation layer advantageously prevents direct contact of the
  • the at least one electronic component follows at the from
  • the protective layer may be applied to the encapsulation layer if the at least one electronic component is advantageously provided with an encapsulation layer.
  • the protective layer is preferably one
  • Protective layer substantially for protection against mechanical damage and advantageously has a greater thickness than the encapsulation layer.
  • the functional layer stack has a protective layer on the side facing away from the carrier substrate for protection
  • the protective layer for the functional layer stack serves, in particular, to protect the functional layer stack from scratching.
  • the protective layer for the functional layer stack is preferably a glass layer or a plastic layer.
  • the protective layer may in particular be adhered to the functional layer stack or be laminated, for example, as a film.
  • the electrical connection contacts of the organic light emitting diode module In one embodiment of the organic light emitting diode module, the electrical connection contacts of the organic light emitting diode module
  • the electrical connection contacts, for example, in addition to the functional layer stack on the carrier substrate
  • At least one electronic component electrically conductively connected to the second main surface of the carrier substrate.
  • Light emitting diode module comprises according to at least one
  • Embodiment providing a carrier substrate having a first major surface and a second major surface opposite the first major surface, forming a via in the carrier substrate to form an electrically conductive connection between the first and second major surfaces of the carrier substrate, forming conductive traces at the second Main area of the
  • Carrier substrate the assembly of the second main surface with at least one electronic component, and the
  • Layer stack comprises a first electrode layer, an organic active layer sequence and a second electrode layer.
  • Carrier substrate advantageous only after the populating the second main surface with the at least one electronic component.
  • the one or more electronic components can be mounted on the second main surface of the carrier substrate by means of reflow soldering. By equipping the second main surface with the at least one electronic component before applying the functional
  • the method is on exposed surfaces of the carrier substrate, the
  • the carrier substrate, the functional layer stack and the at least one electronic component are advantageously protected from environmental influences, in particular from the penetration of
  • Encapsulation layer is preferably carried out by means
  • Atomic layer deposition or by means of plasma-assisted chemical vapor deposition. Further advantageous embodiments of the method will be apparent from the description of the
  • FIG. 1A shows a schematic representation of a side view of an organic light-emitting diode module according to a first exemplary embodiment
  • Figure 1B is a schematic representation of a plan view of the light emitting diode module according to the first
  • Figure IC is a schematic representation of a view of
  • FIG. 2A is a schematic representation of a side view of an organic light-emitting diode module according to a second exemplary embodiment
  • Figure 2B is a schematic representation of a plan view of the light emitting diode module according to the second
  • Embodiment, and Figure 2C is a schematic representation of a view of
  • the first exemplary embodiment of the organic light-emitting diode module 10 shown in a view from below in FIG.
  • Carrier substrate 1 may in particular be a printed circuit board.
  • the carrier substrate 1 can be designed to be either rigid or flexible. Suitable materials for a rigid carrier substrate 1 are, for example, FR4 or a liquid crystal plastic.
  • a flexible carrier substrate 1 in particular a so-called flex-PCB is suitable, which contains, for example, polyimide. Alternatively, however, other materials for the carrier substrate 1 are suitable. The requirements for the material of the carrier substrate 1 are that it is the deposition of
  • Light emitting diode module 10 in particular during the coating and encapsulation occur.
  • the carrier substrate 1 has a first main surface 11 and a second main surface 12. On the first main surface 11 of the carrier substrate 1, a functional layer stack 2 is arranged, starting from the carrier substrate 1, a first
  • Electrode layer 21, an organic active layer sequence 23 and a second electrode layer 22 has.
  • the organic active disposed between the first electrode layer 21 and the second electrode layer 22
  • Layer sequence 23 may comprise layers with organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules”) or combinations thereof
  • Layer sequence 23 has at least one light-emitting organic layer.
  • the organic active layer sequence 23 can have, in addition to at least one light-emitting organic layer, further functional layers, in particular for injection, transport or blocking of holes and / or electrons.
  • the individual layers of the organic active layer sequence 23 are not shown in detail in FIG. The structure of such
  • Electrode layer 21 as an anode and the second
  • Electrode layer 22 is formed as a cathode. However, it would also be conceivable for the polarities of the electrode layers 21, 22 to be reversed. For electrically insulating the electrode layers 21, 22 from each other, at least one electrically insulating layer 24 may be provided.
  • the organic light emitting diode module 10 according to the
  • Embodiment emits light 15 in the from
  • Support substrate 1 facing away from the functional
  • the second electrode layer 22 arranged in the emission direction above the organic active layer sequence 23 is a translucent electrode layer executed.
  • This preferably contains a thin translucent metal layer or a transparent conductive oxide such as indium tin oxide (ITO).
  • ITO indium tin oxide
  • transparent conductive oxide layer may be used as the electrode layer 22, for example, an ITO metal ITO
  • the first electrode layer 21 arranged between the organic active layer sequence 23 and the carrier substrate 1 is preferably designed as a reflective layer.
  • the electronic components 5 can in particular a
  • Constant current driver for the functional layer stack 2 include.
  • Main surface 12 may be arranged.
  • the conductor tracks 4 are structured in a suitable manner in order to supply the electronic components 5 with power and, if appropriate, to each other
  • the electronic components 5 are
  • Carrier substrate 1 is applied. This has the advantage that the functional layer stack 2 does not have the high
  • Light emitting diode module 10 to an external voltage source are in the embodiment of Figure 1 at the first
  • Main surface 11 of the carrier substrate 1 is arranged.
  • Electrode layers 21, 22 of the functional layer stack 10, vias 41, 42 are formed in the carrier substrate 1, which has an electrically conductive connection between the first main surface 11 and the second
  • the vias 41, 42 are, for example, through-holes, which are from the first
  • an electrically conductive material in particular a metal.
  • Electrode layers 21, 22 of the functional layer stack 2 realized. To increase the current-carrying capacity or to improve the current distribution of the electrically conductive connection, the electrode layers 21, 22 can each be connected to a plurality of plated-through holes 41, 42.
  • the anode electrode layer 21 is contacted by means of three plated-through holes 42.
  • the functional layer stack 2, the carrier substrate 1 and the electronic components 5 are advantageously provided with an encapsulation layer 3, apart from an opening for the electrical connections 8, 9.
  • Encapsulation layer 3 serves in particular to protect the functional layer stack 2, the interconnects 4 and the electronic components 5 from environmental influences,
  • Encapsulation layer 3 preferably contains one or more transparent oxide layers, in particular metal oxide layers, such as, for example, aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide or tantalum oxide. Furthermore, in particular silicon oxide layers or
  • the encapsulation layer 3 can be composed of several layers, the individual layers advantageously each having a thickness between an atomic layer and about 1 ⁇ m.
  • encapsulation layer 3 has a total thickness of less than 10 ym, less than 1 ym, or even less than 100 nm.
  • the one or more layers of the encapsulation layer 3 are preferably applied by means of atomic layer deposition (ALD).
  • ALD atomic layer deposition
  • the encapsulation layer may comprise at least one or a plurality of further layers, ie, in particular barrier layers and / or passivation layers,
  • PECVD plasma-enhanced chemical vapor deposition
  • Silicon oxynitride indium tin oxide, indium zinc oxide, aluminum ⁇ doped zinc oxide, aluminum oxide and mixtures and
  • the one or more further layers may, for example, each have a thickness of between 1 nm and 10 ⁇ m and preferably between 1 nm and 400 nm, the limits being included.
  • the carrier substrate 1, the conductor tracks 4 and the electronic components 5 are provided with the encapsulation layer 3.
  • those surfaces which are not directly provided with a further functional layer, such as, for example, the electrical connections 8, 9, are regarded as exposed surfaces.
  • Protective layer 6 arranged to protect against mechanical damage.
  • the protective layer 6 can in particular be applied to the previously applied encapsulation layer 3, which serves in particular for protection against moisture and oxidation.
  • the protective layer 6 can in particular a
  • Plastics or a lacquer layer may be provided as a protective layer 6.
  • Another protective layer 7 is to protect the functional layer stack 2 from mechanical damage
  • the Protective layer 7 protects the functional layer stack 2 in particular against scratching.
  • the protective layer 7 may in particular be a glass layer, a plastic layer or a lacquer layer.
  • the protective layer 7 can for example be laminated or glued onto the side of the previously applied encapsulation layer 3 facing away from the carrier substrate 1. This can be done between the
  • connection layer 71 in particular an adhesive layer may be arranged.
  • the organic light emitting diode module 10 is characterized
  • FIG. 2A schematically shows a side view
  • FIG. 2B shows a top view
  • FIG. 2C shows a bottom view of a second exemplary embodiment of the invention
  • Light emitting diode module 10 differs from the first
  • Terminals 8, 9, which are provided for connecting the light-emitting diode module 10 with an external voltage source, are arranged on the second main surface 12 of the carrier substrate 1.
  • the electrical connection to the electrode layers 21, 22 of the functional layer stack 2 takes place by means of the plated-through holes 41, 42 in the carrier substrate 1.
  • the second exemplary embodiment corresponds to the first exemplary embodiment.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un module (10) de diodes électroluminescentes organiques comprenant: un substrat de support (1) ayant une première surface principale (11) et une deuxième surface principale (12), un empilement (2) de couches fonctionnelles qui est disposé sur la première surface principale (11) et qui comprend une première couche d'électrode (21), une suite de couches actives organiques (23) et une deuxième couche d'électrode (22), au moins un trou d'interconnexion (41, 42) dans le substrat de support (1), des tracés conducteurs électriques (4) qui sont disposés sur la deuxième surface principale (12), au moins un des tracés conducteurs (4) étant relié de manière électroconductrice à l'empilement (2) de couches fonctionnelles au moyen dudit trou d'interconnexion (41, 42), et au moins un élément électronique (5) qui sert à commander l'empilement (2) de couches fonctionnelles, est disposé sur la deuxième surface principale (12) et est mis en contact électrique au moyen des tracés conducteurs (4). L'invention concerne également un procédé de fabrication du module (10) de diodes électroluminescentes organiques.
PCT/EP2013/066500 2012-08-09 2013-08-06 Module de diodes électroluminescentes organiques et son procédé de fabrication Ceased WO2014023740A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012214216.9 2012-08-09
DE102012214216.9A DE102012214216A1 (de) 2012-08-09 2012-08-09 Organisches Leuchtdiodenmodul und Verfahren zu dessen Herstellung

Publications (1)

Publication Number Publication Date
WO2014023740A1 true WO2014023740A1 (fr) 2014-02-13

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PCT/EP2013/066500 Ceased WO2014023740A1 (fr) 2012-08-09 2013-08-06 Module de diodes électroluminescentes organiques et son procédé de fabrication

Country Status (2)

Country Link
DE (1) DE102012214216A1 (fr)
WO (1) WO2014023740A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220359332A1 (en) * 2021-05-09 2022-11-10 Spts Technologies Limited Temporary passivation layer on a substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013108134A1 (de) 2013-07-30 2015-02-26 Osram Oled Gmbh Anordnung optoelektronischer Bauelemente und Verfahren zum Herstellen einer Anordnung optoelektronischer Bauelemente

Citations (6)

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US20020196402A1 (en) * 2001-06-22 2002-12-26 International Business Machines Corporation Passive drive matrix display
US6633134B1 (en) * 1999-09-27 2003-10-14 Nec Corporation Active-matrix-driven organic EL display device
JP2006092809A (ja) * 2004-09-21 2006-04-06 Victor Co Of Japan Ltd シートディスプレイ
WO2009095006A1 (fr) 2008-01-30 2009-08-06 Osram Opto Semiconductors Gmbh Dispositif à système d'encapsulage
WO2010108894A1 (fr) 2009-03-24 2010-09-30 Osram Opto Semiconductors Gmbh Encapsulation en couches minces pour un composant optoélectronique, son procédé de fabrication et composant optoélectronique
EP2472583A2 (fr) * 2010-12-29 2012-07-04 Delphi Technologies, Inc. Dispositif d'affichage à diode électroluminescente organique doté d'un substrat double face et procédé de formation associé

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Publication number Priority date Publication date Assignee Title
DE10305455B4 (de) * 2003-02-04 2006-10-19 Ksg Leiterplatten Gmbh Trägeranordnung für eine organische Leuchtdiode
DE102006060781B4 (de) * 2006-09-29 2021-09-16 Pictiva Displays International Limited Organisches Leuchtmittel

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Publication number Priority date Publication date Assignee Title
US6633134B1 (en) * 1999-09-27 2003-10-14 Nec Corporation Active-matrix-driven organic EL display device
US20020196402A1 (en) * 2001-06-22 2002-12-26 International Business Machines Corporation Passive drive matrix display
JP2006092809A (ja) * 2004-09-21 2006-04-06 Victor Co Of Japan Ltd シートディスプレイ
WO2009095006A1 (fr) 2008-01-30 2009-08-06 Osram Opto Semiconductors Gmbh Dispositif à système d'encapsulage
WO2010108894A1 (fr) 2009-03-24 2010-09-30 Osram Opto Semiconductors Gmbh Encapsulation en couches minces pour un composant optoélectronique, son procédé de fabrication et composant optoélectronique
EP2472583A2 (fr) * 2010-12-29 2012-07-04 Delphi Technologies, Inc. Dispositif d'affichage à diode électroluminescente organique doté d'un substrat double face et procédé de formation associé

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220359332A1 (en) * 2021-05-09 2022-11-10 Spts Technologies Limited Temporary passivation layer on a substrate

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