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WO2014021081A1 - Antenna apparatus - Google Patents

Antenna apparatus Download PDF

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Publication number
WO2014021081A1
WO2014021081A1 PCT/JP2013/069097 JP2013069097W WO2014021081A1 WO 2014021081 A1 WO2014021081 A1 WO 2014021081A1 JP 2013069097 W JP2013069097 W JP 2013069097W WO 2014021081 A1 WO2014021081 A1 WO 2014021081A1
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Prior art keywords
radiation electrode
electrode
feeding
resonance
antenna
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PCT/JP2013/069097
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French (fr)
Japanese (ja)
Inventor
高村亜由美
上西雄二
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Publication of WO2014021081A1 publication Critical patent/WO2014021081A1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/36Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00Antenna arrays or systems
    • H01Q21/30Combinations of separate antenna units operating in different wavebands and connected to a common feeder system
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30Arrangements for providing operation on different wavebands
    • H01Q5/307Individual or coupled radiating elements, each element being fed in an unspecified way
    • H01Q5/314Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors
    • H01Q5/335Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors at the feed, e.g. for impedance matching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30Arrangements for providing operation on different wavebands
    • H01Q5/307Individual or coupled radiating elements, each element being fed in an unspecified way
    • H01Q5/342Individual or coupled radiating elements, each element being fed in an unspecified way for different propagation modes
    • H01Q5/357Individual or coupled radiating elements, each element being fed in an unspecified way for different propagation modes using a single feed point
    • H01Q5/364Creating multiple current paths
    • H01Q5/371Branching current paths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30Arrangements for providing operation on different wavebands
    • H01Q5/378Combination of fed elements with parasitic elements

Definitions

  • the present invention relates to an antenna device including a feeding radiation electrode connected to a feeding point and a parasitic radiation electrode connected to a ground conductor, and in particular, mobile communication devices such as mobile phone terminals and GPS receivers, and wireless devices.
  • the present invention relates to a small antenna device used in an electronic device having a wireless communication function such as a LAN.
  • Patent Documents 1 and 2 disclose antennas provided in mobile communication devices and electronic devices having a wireless communication function.
  • FIG. 10 is a plan view of the antenna device disclosed in Patent Document 1.
  • the radiation electrode 3 (31, 32, 33, 34) of the antenna is formed on the substrate, a plurality of reactance elements 5 and 6 are inserted in the middle of the radiation electrode, and the feeding electrode 2 and the radiation electrode 3 is inserted in the inductor 11.
  • the resonance frequencies of the fundamental mode and the higher-order mode of the radiation electrode 3 can be adjusted by determining the reactance of the reactance elements 5 and 6.
  • FIG. 11 is a perspective view of a chip antenna provided in the antenna device disclosed in Patent Document 2.
  • the chip antenna 20 is formed on a base body 21, first and second radiation electrodes 22 and 23 constituting comb-shaped electrodes on the upper surface of the base body 21, and side surfaces of the base body 21, and the first radiation is formed.
  • a feeding radiation electrode 24 connected to one end of the electrode 22, a first ground electrode 25 formed on the side surface and connected to the second radiation electrode 23, and terminal electrodes 27 to 29 formed on the bottom surface of the substrate 21.
  • the first terminal electrode 27 is connected to a power supply line formed on the printed board.
  • the second terminal electrode 28 is connected to a ground conductor on the printed board.
  • the resonance frequency of the fundamental mode and the higher order mode can be adjusted by changing the value of the reactance element, but the bandwidth cannot be adjusted.
  • a capacitance is formed in the vicinity of the open end of the radiation electrode and the vicinity of the power feeding portion.
  • the radiation electrode 22 and the second radiation electrode 23, which is a non-feed radiation electrode, are capacitively coupled, and a broadband characteristic is obtained by double resonance.
  • the amount of electromagnetic coupling between the feed radiation electrode and the feed radiation electrode must be optimized. For this purpose, a certain distance is required between the feeding radiation electrode and the non-feeding radiation electrode. This is one factor that prevents miniaturization.
  • An object of the present invention is to provide an antenna device that obtains an optimum amount of coupling between a feeding radiation electrode and a parasitic radiation electrode within a limited area, and is small in size and suitable for a plurality of frequency bands. It is in.
  • the antenna device of the present invention is an antenna having a base and a plurality of radiation electrodes formed on the base.
  • the radiation electrode includes a feed radiation electrode that resonates in a plurality of resonance modes including a higher order resonance mode, and a parasitic radiation electrode that resonates in a higher order resonance mode or a fundamental resonance mode, Double resonance occurs between the resonance mode of the non-feed radiation electrode and the higher-order resonance mode of the feed radiation electrode at a frequency higher than the higher-order resonance mode of the feed radiation electrode, A circuit element is connected in series to the feeding end of the feeding radiation electrode.
  • the current intensity distribution of the higher-order resonance mode of the feed radiation electrode is determined by the circuit element inserted at the feed end of the feed radiation electrode, and the resonance mode of the parasitic radiation electrode and the higher-order resonance mode of the feed radiation electrode are determined. Is determined.
  • the feeding radiation electrode may include a first radiation electrode and a second radiation electrode extending from the first radiation electrode.
  • the current intensity distribution (generated magnetic field distribution) of the radiation electrode changes depending on the value of the circuit element inserted into the feeding end of the radiation electrode.
  • the amount of magnetic coupling between the feed radiation electrode and the parasitic radiation electrode can be adjusted, so that a predetermined frequency characteristic can be obtained without changing the antenna electrode shape. It is done. Further, the degree of freedom in the interval between the feeding radiation electrode and the non-feeding radiation electrode is increased, and a broadband antenna device can be realized by downsizing correspondingly.
  • the frequency of the resonance mode of the non-feeding radiation electrode is higher than the frequency of the higher-order resonance mode of the feeding radiation electrode, and the two resonance modes are magnetically coupled to form a double resonance without causing an antiresonance point. Broadband by double resonance becomes possible.
  • FIG. 1 is a plan view of an antenna device 101 according to an embodiment of the present invention.
  • FIG. 2 is a perspective view of the chip antenna 50.
  • FIG. 3 is a schematic circuit diagram of the antenna device 101 shown in FIG. 4A and 4B are diagrams showing the distribution of current intensity on each electrode of the antenna device 101 in the frequency 5 GHz band.
  • FIG. 5A is a diagram illustrating the frequency characteristics of the return loss (S11) of the antenna 101
  • FIG. 5B is a diagram illustrating the frequency range of 4 GHz to 6 GHz in FIG.
  • FIG. 6A is a diagram showing an impedance trajectory viewed from the feeding point of the antenna 101 on a Smith chart
  • FIG. 6B is a diagram showing a frequency range of 4 GHz to 6 GHz in FIG.
  • FIGS. 7A, 7B, and 7C are plan views of the antenna devices ANT3, ANT4, and ANT5.
  • 8A is a frequency characteristic diagram of the return loss of the antenna ANT3 shown in FIG. 7A
  • FIG. 8B is a frequency characteristic diagram of the return loss of the antenna ANT4 shown in FIG. 7B.
  • FIG. 9A is a plan view of an antenna device 102 according to another embodiment
  • FIG. 9B is a schematic circuit diagram thereof.
  • FIG. 10 is a plan view of the antenna device disclosed in Patent Document 1.
  • FIG. 11 is a perspective view of a chip antenna provided in the antenna device disclosed in Patent Document 2.
  • FIG. 10 is a plan view of the antenna device disclosed in Patent Document 1.
  • FIG. 1 is a plan view of an antenna device 101 according to an embodiment of the present invention.
  • the antenna device 101 includes a substrate 40, various electrodes formed on the substrate 40, a chip antenna 50 mounted on the substrate 40, and circuit elements 61 to 66.
  • a ground conductor 41 is formed on the front and back surfaces of the substrate 40.
  • the ground conductors on the front and back surfaces are connected through a large number of through holes (plated through holes).
  • a ground conductor non-formation region 42 in which no ground conductor is formed is provided on the front and back surfaces of the substrate 40, and a feeding radiation electrode and a parasitic radiation electrode are formed in the ground conductor non-formation region 42.
  • FIG. 2 is a perspective view of the chip antenna 50.
  • the chip antenna 50 includes a rectangular parallelepiped dielectric base 51 and electrodes 52 and 53 formed from the lower surface to the upper surface of the dielectric base.
  • the first feed radiation electrode is constituted by the electrodes 45 and 46 and the electrode 53 of the chip antenna 50 shown in FIG. Further, the electrode 47 and the electrode 52 of the chip antenna 50 constitute a second feeding radiation electrode.
  • a parasitic radiation electrode 48 is formed in the ground conductor non-forming region 42.
  • a power supply electrode 43 and a power supply line 44 are further formed on the substrate 40.
  • a circuit element 63 is mounted in the middle from the first end P11 to the second end P12 of the first feed radiation electrode by the electrodes 45, 46 and the electrode 53 (position near the feed end).
  • a circuit element 62 is mounted between the feed end (first end P11) of the first feed radiation electrode and the feed line 44.
  • a circuit element 64 is mounted in the middle of the second feeding radiation electrode by the electrode 47 and the electrode 52 (near the branch point from the first feeding radiation electrode).
  • the first end P31 of the parasitic radiation electrode 48 is open, and the circuit element 66 is mounted between the second end P32 and the ground conductor 41.
  • a circuit element 65 is mounted between the vicinity of the second end P ⁇ b> 32 of the parasitic radiation electrode 48 and the electrode 45.
  • a circuit element 61 is mounted between the feed line 44 and the ground conductor 41.
  • FIG. 3 is a schematic circuit diagram of the antenna device 101 shown in FIG.
  • the circuit elements 62 and 63 are chip inductors, and the circuit elements 64 to 66 are chip capacitors.
  • the circuit element 61 is a chip inductor.
  • the circuit element 63 is connected in series at a position near the feeding end of the first feeding radiation electrode by the electrodes 45 and 46 and the electrode 53.
  • a circuit element 62 (inductor) is connected in series between the electrode 45 near the feeding end of the first feeding radiation electrode and the feeding line 44.
  • a circuit element 64 (capacitor) is connected in series in the middle of the second feeding radiation electrode by the electrode 47 and the electrode 52 (near the branch point from the first feeding radiation electrode).
  • the grounding end of the parasitic radiation electrode 48 is grounded via a circuit element 66 (capacitor).
  • a circuit element 65 (capacitor) is connected between the vicinity of the ground end of the parasitic radiation electrode 48 and the electrode 45.
  • a circuit element 61 (inductor) is connected to the shunt between the feed line 44 and the ground conductor 41.
  • the circuit element 63 adjusts the frequency of the 1/4 wavelength resonance (fundamental mode) of the first feeding radiation electrode by the electrodes 45 and 46 and the electrode 53.
  • the circuit element 64 adjusts the frequency of the quarter wavelength resonance (fundamental mode) of the second feeding radiation electrode by the electrode 47 and the electrode 52.
  • the circuit element 66 adjusts the frequency of the 1/4 wavelength resonance (fundamental mode) of the parasitic radiation electrode 48.
  • the circuit element 65 adjusts the frequency of the 3/4 wavelength resonance (third mode) by the first feeding radiation electrode.
  • the circuit element 62 adjusts the current intensity distribution on the first feeding radiation electrode by the electrodes 45 and 46 and the electrode 53.
  • the coupling amount between the 1 ⁇ 4 wavelength resonance of the first feeding radiation electrode and the 1 ⁇ 4 wavelength resonance of the parasitic radiation electrode 48 is adjusted, thereby ensuring the bandwidth due to the double resonance.
  • the circuit element 61 matches the impedance of the power feeding circuit with the impedance of the antenna device.
  • FIG. 4 (A) and 4 (B) are diagrams showing the distribution of current intensity on each electrode of the antenna device 101 in the frequency 5 GHz band (4.955 GHz).
  • the current intensity is expressed by concentration.
  • the element values of each circuit element are as follows.
  • the circuit element 62 is set with the inductance of the circuit element 62.
  • the element values of 63 and 64 are also changed.
  • the circuit element 62 Since the circuit element 62 is inserted in series at a position near the feeding end of the first feeding radiation electrode, if the reactance of the circuit element 62 is changed, the circuit element 62 is placed on the first feeding radiation electrode by the electrodes 45 and 46 and the electrode 53. Current distribution changes, and the magnetic field strength distribution changes accordingly.
  • the current intensity distribution on the first feeding radiation electrode, particularly the portion facing the parallel with the parasitic radiation electrode 48 (portion surrounded by an ellipse E in FIGS. 4A and 4B) is the same as that of the first feeding radiation electrode.
  • the magnetic field coupling with the parasitic radiation electrode 48 is affected. Therefore, the amount of coupling between the first feeding radiation electrode and the non-feeding radiation electrode varies depending on the inductance of the circuit element 62. Then, the amount of coupling is optimized so as to ensure the bandwidth due to the double resonance.
  • FIG. 5A is a diagram showing the frequency characteristics of the return loss (S11) of the antenna 101.
  • FIG. 6A is a diagram showing the locus of impedance viewed from the feeding point of the antenna 101 on a Smith chart.
  • FIG. 5B is a diagram showing a frequency range of 4 GHz to 6 GHz in FIG.
  • FIG. 6B is a diagram illustrating a frequency range of 4 GHz to 6 GHz in FIG.
  • Table 1 the conditions of the circuit elements that obtain the characteristics of the antenna devices ANT1 and ANT2 are as shown in Table 1.
  • the return loss is low at the frequencies indicated by (a), (b), (c), and (d).
  • (a) is 1.57 GHz resonance due to 1/4 wavelength resonance of the first feeding radiation electrode (45, 46, 53), and (b) ⁇ ⁇ ⁇ is due to 1/4 wavelength resonance of the second feeding radiation electrode (47, 52).
  • 2. 45 GHz resonance (c) is approximately 5.0 GHz resonance due to 3/4 wavelength resonance of the first feeding radiation electrode (45, 46, 53), and (d) 1 / is 1 ⁇ 4 wavelength of the parasitic radiation electrode 48. The resonance is approximately 5.5 GHz due to resonance.
  • the impedance locus passes through the vicinity of the center of the Smith chart in the 5 GHz band.
  • the impedance locus of ANT1 passes near the center of the Smith chart as compared with the antenna device ANT2. That is, the antenna device ANT1 is more matched.
  • the antenna apparatus ANT1 has a return loss of ⁇ 15 dB over 5.1 to 5.6 GHz. In the antenna device ANT2, a return loss of ⁇ 7 dB is obtained over 4.8 to 5.6 GHz.
  • the 1.5 GHz band is a GPS band, and the 2.4 GHz band and the 5 GHz band are both wireless LAN bands. In this way, it functions as a three-band antenna device.
  • the 1 ⁇ 4 wavelength resonance of the first feeding radiation electrode and the 1 ⁇ 4 wavelength resonance of the parasitic radiation electrode are magnetically coupled.
  • the frequency of the 1/4 wavelength resonance of the parasitic radiation electrode (resonator on the coupling side) indicated by (d) is the first feeding radiation indicated by (c). Since the frequency is higher than the 3/4 wavelength resonance frequency of the electrode, an antiresonance point is generated on the side higher than the resonance frequency of (d). Therefore, double resonance occurs without affecting the passbands (c) to (d).
  • the frequency of the quarter-wave resonance of the parasitic radiation electrode is lower than the frequency of the quarter-wave resonance of the first feed radiation electrode, the frequency is higher than the frequency of the quarter-wave resonance of the parasitic radiation electrode. Since an anti-resonance point is generated, an anti-resonance point is generated between the two frequencies (c) and (d), and broadband characteristics cannot be obtained.
  • the 7 (A), 7 (B), and 7 (C) are plan views of the antenna devices ANT3, ANT4, and ANT5. In these examples, the range including the entire substrate is shown.
  • the structure of the antenna device ANT3 in FIG. 7A is the same as that of the antenna device 101 shown in FIG.
  • the extending direction of the first and second feeding radiation electrodes and the non-feeding radiation electrode is not limited to the direction along the long side of the substrate, but on the short side of the substrate 40 as shown in the antenna device ANT4 in FIG. It may be along the direction.
  • the formation positions of the first and second feed radiation electrodes and the non-feed radiation electrode are not limited to the corners of the substrate 40, but are positions along the sides as shown in the antenna device ANT5 in FIG. 7C. May be.
  • the element values of the circuit elements of the antenna devices ANT3, ANT4, and ANT5 shown in FIGS. 7A, 7B, and 7C are different.
  • the element values of the circuit elements of the antenna devices ANT3 and ANT4 are as follows.
  • FIG. 8A is a frequency characteristic diagram of the return loss of the antenna ANT3 shown in FIG. 7A
  • FIG. 8B is a frequency characteristic diagram of the return loss of the antenna ANT4 shown in FIG. 7B.
  • the numbers Mkr1 to Mkr7 correspond to the mark numbers represented with the triangle symbols in the characteristic diagrams.
  • low return loss characteristics are obtained in the 1.5 GHz band, the 2.4 GHz band, and the 5 GHz band.
  • the return loss characteristics can be obtained in a predetermined frequency band by setting the element values of the respective circuit elements.
  • FIG. 9A is a plan view of an antenna device 102 according to another embodiment different from the antenna device shown in FIG.
  • the antenna device 102 includes a substrate 40, various electrodes formed on the substrate 40, and circuit elements 62 mounted on the substrate 40.
  • the antenna device 102 does not include the chip antenna 50, the electrode 47, and the circuit elements 61, 63, 64, 65, and 66.
  • a circuit element 62 is connected in series to the feeding end of the feeding radiation electrode 46P.
  • One end of the parasitic radiation electrode 48P is directly grounded to the ground conductor 41.
  • Other configurations are the same as those of the antenna device 101.
  • FIG. 9B is a schematic circuit diagram of the antenna device 102.
  • the circuit element 62 is a chip inductor. In this way, the circuit element 62 (inductor) is connected in series between the feeding end of the feeding radiation electrode and the feeding circuit.
  • the circuit element 62 adjusts the current intensity distribution of the portion surrounded by the ellipse E on the feeding radiation electrode 46P. This adjusts the amount of coupling between the 1 ⁇ 4 wavelength resonance of the feed radiation electrode 46P and the 1 ⁇ 4 wavelength resonance of the parasitic radiation electrode 48P, thereby ensuring a bandwidth due to double resonance.
  • the present invention can also be applied to an antenna device including one feeding radiation electrode and one parasitic radiation electrode.
  • the feeding radiation electrode and the parasitic radiation electrode are configured by the electrode pattern on the substrate.
  • the chip antenna is formed by forming the feeding radiation electrode and the parasitic radiation electrode on the dielectric substrate.
  • the chip antenna may be configured and mounted on a substrate.
  • ANT1 to ANT5 ... antenna device P11 ... first end P12 ... second end P31 ... first end P32 ... second end 40 ... substrate 41 ... ground conductor 42 ... ground conductor non-forming region 43 ... feed electrode 44 ... feed line 45, 46, 47 ... electrode 48 ... parasitic radiation electrode 50 ... chip antenna 52, 53 ... electrodes 61-66 ... circuit elements 101, 102 ... antenna device

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Description

アンテナ装置Antenna device

 この発明は、給電点に接続される給電放射電極とグランド導体に接続される無給電放射電極とを備えたアンテナ装置に関し、特に、例えば携帯電話端末、GPS受信機などの移動体通信機器や無線LANなどの無線通信機能を有する電子機器に用いられる小型のアンテナ装置に関するものである。 The present invention relates to an antenna device including a feeding radiation electrode connected to a feeding point and a parasitic radiation electrode connected to a ground conductor, and in particular, mobile communication devices such as mobile phone terminals and GPS receivers, and wireless devices. The present invention relates to a small antenna device used in an electronic device having a wireless communication function such as a LAN.

 移動体通信機器や無線通信機能を有する電子機器に備えられるアンテナが例えば特許文献1,2に開示されている。 For example, Patent Documents 1 and 2 disclose antennas provided in mobile communication devices and electronic devices having a wireless communication function.

 図10は特許文献1に示されているアンテナ装置の平面図である。この図10の例では、アンテナの放射電極3(31,32,33,34)を基板上に形成し、放射電極の途中に複数のリアクタンス素子5,6を挿入し、給電電極2と放射電極3との間にインダクタ11を挿入している。この構成により、リアクタンス素子5,6のリアクタンスを定めることによって、放射電極3の基本モードおよび高次モードの共振周波数を調整可能としている。 FIG. 10 is a plan view of the antenna device disclosed in Patent Document 1. FIG. In the example of FIG. 10, the radiation electrode 3 (31, 32, 33, 34) of the antenna is formed on the substrate, a plurality of reactance elements 5 and 6 are inserted in the middle of the radiation electrode, and the feeding electrode 2 and the radiation electrode 3 is inserted in the inductor 11. With this configuration, the resonance frequencies of the fundamental mode and the higher-order mode of the radiation electrode 3 can be adjusted by determining the reactance of the reactance elements 5 and 6.

 図11は特許文献2に示されているアンテナ装置が備えるチップアンテナの斜視図である。図11において、チップアンテナ20は、基体21と、基体21の上面において櫛歯状電極を構成する第1及び第2の放射電極22,23と、基体21の側面に形成され、第1の放射電極22の一端に接続された給電放射電極24と、側面に形成され、第2の放射電極23に接続された第1の接地電極25と、基体21の底面に形成された端子電極27~29とを備えている。第1の端子電極27は、プリント基板上に形成された給電ラインに接続される。第2の端子電極28はプリント基板上のグランド導体に接続される。 FIG. 11 is a perspective view of a chip antenna provided in the antenna device disclosed in Patent Document 2. FIG. In FIG. 11, the chip antenna 20 is formed on a base body 21, first and second radiation electrodes 22 and 23 constituting comb-shaped electrodes on the upper surface of the base body 21, and side surfaces of the base body 21, and the first radiation is formed. A feeding radiation electrode 24 connected to one end of the electrode 22, a first ground electrode 25 formed on the side surface and connected to the second radiation electrode 23, and terminal electrodes 27 to 29 formed on the bottom surface of the substrate 21. And. The first terminal electrode 27 is connected to a power supply line formed on the printed board. The second terminal electrode 28 is connected to a ground conductor on the printed board.

国際公開第2009/28251号公報International Publication No. 2009/28251 特開2011-61638号公報JP 2011-61638 A

 図10に示されるアンテナ装置においては、リアクタンス素子の値を変更することで基本モードと高次モードの共振周波数をそれぞれ調整可能であるが、帯域幅の調整はできない。 In the antenna device shown in FIG. 10, the resonance frequency of the fundamental mode and the higher order mode can be adjusted by changing the value of the reactance element, but the bandwidth cannot be adjusted.

 図11に示されるような形状の放射電極を備えたチップアンテナ20は、放射電極の開放端と給電部付近とが近接して容量が形成され、この容量によって、給電放射電極である第1の放射電極22と無給電放射電極である第2の放射電極23とが容量結合し複共振によって広帯域特性が得られる。 In the chip antenna 20 having the radiation electrode having the shape as shown in FIG. 11, a capacitance is formed in the vicinity of the open end of the radiation electrode and the vicinity of the power feeding portion. The radiation electrode 22 and the second radiation electrode 23, which is a non-feed radiation electrode, are capacitively coupled, and a broadband characteristic is obtained by double resonance.

 しかし、給電放射電極による共振と無給電放射電極による共振とで複共振特性を得て広帯域化を図るには、給電放射電極と無給電放射電極との電磁界結合量を最適にしなければならない。そのためには、給電放射電極と無給電放射電極との間にある程度の距離が必要である。このことは小型化を阻む一つの要因である。 However, in order to achieve a wide band by obtaining double resonance characteristics by resonance by the feed radiation electrode and resonance by the feed radiation electrode, the amount of electromagnetic coupling between the feed radiation electrode and the feed radiation electrode must be optimized. For this purpose, a certain distance is required between the feeding radiation electrode and the non-feeding radiation electrode. This is one factor that prevents miniaturization.

 本発明の目的は、限られた領域内で、給電放射電極と無給電放射電極との最適な結合量を得て、小型でありながら広帯域で複数の周波数帯域に適合したアンテナ装置を提供することにある。 An object of the present invention is to provide an antenna device that obtains an optimum amount of coupling between a feeding radiation electrode and a parasitic radiation electrode within a limited area, and is small in size and suitable for a plurality of frequency bands. It is in.

 本発明のアンテナ装置は、基体およびこの基体に形成された複数の放射電極を有するアンテナにおいて、
 前記放射電極は、高次共振モードを含む複数の共振モードで共振する給電放射電極と、高次共振モードまたは基本共振モードで共振する無給電放射電極とを含み、
 前記給電放射電極の高次共振モードより高い周波数の前記無給電放射電極の共振モードと前記給電放射電極の高次共振モードとで複共振が生じ、
 前記給電放射電極の給電端に回路素子が直列に接続されたことを特徴とする。
The antenna device of the present invention is an antenna having a base and a plurality of radiation electrodes formed on the base.
The radiation electrode includes a feed radiation electrode that resonates in a plurality of resonance modes including a higher order resonance mode, and a parasitic radiation electrode that resonates in a higher order resonance mode or a fundamental resonance mode,
Double resonance occurs between the resonance mode of the non-feed radiation electrode and the higher-order resonance mode of the feed radiation electrode at a frequency higher than the higher-order resonance mode of the feed radiation electrode,
A circuit element is connected in series to the feeding end of the feeding radiation electrode.

 この構成により、前記給電放射電極の給電端に挿入された回路素子によって給電放射電極の高次共振モードの電流強度分布が定められ、無給電放射電極の共振モードと給電放射電極の高次共振モードとの結合量が定められる。 With this configuration, the current intensity distribution of the higher-order resonance mode of the feed radiation electrode is determined by the circuit element inserted at the feed end of the feed radiation electrode, and the resonance mode of the parasitic radiation electrode and the higher-order resonance mode of the feed radiation electrode are determined. Is determined.

 前記給電放射電極は、第1の放射電極とこの第1の放射電極から分岐して延びる第2の放射電極とを含んで構成されていてもよい。 The feeding radiation electrode may include a first radiation electrode and a second radiation electrode extending from the first radiation electrode.

 本発明によれば、放射電極の給電端に挿入される回路素子の値によって、放射電極の電流強度分布(発生磁界分布)が変化する。給電放射電極および無給電放射電極の形状を変更しなくても、給電放射電極と無給電放射電極との磁界結合量が調整できるため、アンテナの電極形状を変更せずに所定の周波数特性が得られる。また、給電放射電極と無給電放射電極との間隔の自由度が高まり、その分小型化で広帯域なアンテナ装置が実現できる。 According to the present invention, the current intensity distribution (generated magnetic field distribution) of the radiation electrode changes depending on the value of the circuit element inserted into the feeding end of the radiation electrode. Without changing the shape of the feed radiation electrode and the parasitic radiation electrode, the amount of magnetic coupling between the feed radiation electrode and the parasitic radiation electrode can be adjusted, so that a predetermined frequency characteristic can be obtained without changing the antenna electrode shape. It is done. Further, the degree of freedom in the interval between the feeding radiation electrode and the non-feeding radiation electrode is increased, and a broadband antenna device can be realized by downsizing correspondingly.

 更に、無給電放射電極の共振モードの周波数は給電放射電極の高次共振モードの周波数よりも高く、この2つの共振モードが磁界結合して複共振することにより、反共振点が生じることなく、複共振による広帯域化が可能となる。 Furthermore, the frequency of the resonance mode of the non-feeding radiation electrode is higher than the frequency of the higher-order resonance mode of the feeding radiation electrode, and the two resonance modes are magnetically coupled to form a double resonance without causing an antiresonance point. Broadband by double resonance becomes possible.

図1は本発明の一実施形態に係るアンテナ装置101の平面図である。FIG. 1 is a plan view of an antenna device 101 according to an embodiment of the present invention. 図2はチップアンテナ50の斜視図である。FIG. 2 is a perspective view of the chip antenna 50. 図3は図1に示したアンテナ装置101の概略回路図である。FIG. 3 is a schematic circuit diagram of the antenna device 101 shown in FIG. 図4(A)、図4(B)は、周波数5GHz帯でのアンテナ装置101の各電極上の電流強度の分布を示す図である。4A and 4B are diagrams showing the distribution of current intensity on each electrode of the antenna device 101 in the frequency 5 GHz band. 図5(A)はアンテナ101のリターンロス(S11)の周波数特性を示す図であり、図5(B)は図5(A)における周波数4GHz~6GHzの範囲について示す図である。FIG. 5A is a diagram illustrating the frequency characteristics of the return loss (S11) of the antenna 101, and FIG. 5B is a diagram illustrating the frequency range of 4 GHz to 6 GHz in FIG. 図6(A)はアンテナ101の給電点からみたインピーダンスの軌跡をスミスチャート上に表した図、図6(B)は図6(A)における周波数4GHz~6GHzの範囲について示す図である。FIG. 6A is a diagram showing an impedance trajectory viewed from the feeding point of the antenna 101 on a Smith chart, and FIG. 6B is a diagram showing a frequency range of 4 GHz to 6 GHz in FIG. 図7(A)、図7(B)、図7(C)はアンテナ装置ANT3,ANT4,ANT5の平面図である。FIGS. 7A, 7B, and 7C are plan views of the antenna devices ANT3, ANT4, and ANT5. 図8(A)は図7(A)に示したアンテナANT3のリターンロスの周波数特性図、図8(B)は図7(B)に示したアンテナANT4のリターンロスの周波数特性図である。8A is a frequency characteristic diagram of the return loss of the antenna ANT3 shown in FIG. 7A, and FIG. 8B is a frequency characteristic diagram of the return loss of the antenna ANT4 shown in FIG. 7B. 図9(A)は別の実施形態に係るアンテナ装置102平面図、図9(B)はその概略回路図である。FIG. 9A is a plan view of an antenna device 102 according to another embodiment, and FIG. 9B is a schematic circuit diagram thereof. 図10は特許文献1に示されているアンテナ装置の平面図である。FIG. 10 is a plan view of the antenna device disclosed in Patent Document 1. In FIG. 図11は特許文献2に示されているアンテナ装置が備えるチップアンテナの斜視図である。FIG. 11 is a perspective view of a chip antenna provided in the antenna device disclosed in Patent Document 2. FIG.

 図1は本発明の一実施形態に係るアンテナ装置101の平面図である。このアンテナ装置101は、基板40、この基板40に形成された各種電極、基板40に実装されたチップアンテナ50および回路素子61~66で構成されている。 FIG. 1 is a plan view of an antenna device 101 according to an embodiment of the present invention. The antenna device 101 includes a substrate 40, various electrodes formed on the substrate 40, a chip antenna 50 mounted on the substrate 40, and circuit elements 61 to 66.

 基板40の表裏面にはグランド導体41が形成されている。この表裏面のグランド導体は多数のスルーホール(plated through hole)を介して接続されている。基板40の表裏面にはグランド導体が形成されていないグランド導体非形成領域42が設けられていて、このグランド導体非形成領域42に給電放射電極および無給電放射電極が形成されている。 A ground conductor 41 is formed on the front and back surfaces of the substrate 40. The ground conductors on the front and back surfaces are connected through a large number of through holes (plated through holes). A ground conductor non-formation region 42 in which no ground conductor is formed is provided on the front and back surfaces of the substrate 40, and a feeding radiation electrode and a parasitic radiation electrode are formed in the ground conductor non-formation region 42.

 図2はチップアンテナ50の斜視図である。チップアンテナ50は直方体形状の誘電体基体51とこの誘電体基体の下面から上面にかけて形成された電極52,53とで構成されている。 FIG. 2 is a perspective view of the chip antenna 50. The chip antenna 50 includes a rectangular parallelepiped dielectric base 51 and electrodes 52 and 53 formed from the lower surface to the upper surface of the dielectric base.

 図1に示した電極45,46およびチップアンテナ50の電極53によって第1給電放射電極が構成されている。また、電極47およびチップアンテナ50の電極52によって第2給電放射電極が構成されている。グランド導体非形成領域42には無給電放射電極48が形成されている。基板40にはさらに給電電極43、給電線路44が形成されている。 The first feed radiation electrode is constituted by the electrodes 45 and 46 and the electrode 53 of the chip antenna 50 shown in FIG. Further, the electrode 47 and the electrode 52 of the chip antenna 50 constitute a second feeding radiation electrode. A parasitic radiation electrode 48 is formed in the ground conductor non-forming region 42. A power supply electrode 43 and a power supply line 44 are further formed on the substrate 40.

 電極45,46および電極53による第1給電放射電極の第1端P11から第2端P12までの途中(給電端寄りの位置)には回路素子63が実装されている。第1給電放射電極の給電端(第1端P11)と給電線路44との間には回路素子62が実装されている。また、電極47および電極52による第2給電放射電極の途中(第1給電放射電極からの分岐点付近)には回路素子64が実装されている。また、無給電放射電極48の第1端P31は開放されていて、第2端P32とグランド導体41との間に回路素子66が実装されている。さらに無給電放射電極48の第2端P32の近傍と電極45との間に回路素子65が実装されている。給電線路44とグランド導体41との間には回路素子61が実装されている。 A circuit element 63 is mounted in the middle from the first end P11 to the second end P12 of the first feed radiation electrode by the electrodes 45, 46 and the electrode 53 (position near the feed end). A circuit element 62 is mounted between the feed end (first end P11) of the first feed radiation electrode and the feed line 44. A circuit element 64 is mounted in the middle of the second feeding radiation electrode by the electrode 47 and the electrode 52 (near the branch point from the first feeding radiation electrode). Further, the first end P31 of the parasitic radiation electrode 48 is open, and the circuit element 66 is mounted between the second end P32 and the ground conductor 41. Further, a circuit element 65 is mounted between the vicinity of the second end P <b> 32 of the parasitic radiation electrode 48 and the electrode 45. A circuit element 61 is mounted between the feed line 44 and the ground conductor 41.

 図3は図1に示したアンテナ装置101の概略回路図である。回路素子62,63はチップインダクタ、回路素子64~66はチップキャパシタである。また、回路素子61はチップインダクタである。 FIG. 3 is a schematic circuit diagram of the antenna device 101 shown in FIG. The circuit elements 62 and 63 are chip inductors, and the circuit elements 64 to 66 are chip capacitors. The circuit element 61 is a chip inductor.

 このように、電極45,46および電極53による第1給電放射電極の給電端寄りの位置に回路素子63が直列接続されている。そして、第1給電放射電極の給電端寄りの電極45と給電線路44との間に回路素子62(インダクタ)が直列接続されている。また、電極47および電極52による第2給電放射電極の途中(第1給電放射電極からの分岐点付近)に回路素子64(キャパシタ)が直列接続されている。また、無給電放射電極48の接地端は回路素子66(キャパシタ)を介して接地されている。さらに無給電放射電極48の接地端近傍と電極45との間に回路素子65(キャパシタ)が接続されている。給電線路44とグランド導体41との間には回路素子61(インダクタ)がシャントに接続されている。 Thus, the circuit element 63 is connected in series at a position near the feeding end of the first feeding radiation electrode by the electrodes 45 and 46 and the electrode 53. A circuit element 62 (inductor) is connected in series between the electrode 45 near the feeding end of the first feeding radiation electrode and the feeding line 44. In addition, a circuit element 64 (capacitor) is connected in series in the middle of the second feeding radiation electrode by the electrode 47 and the electrode 52 (near the branch point from the first feeding radiation electrode). The grounding end of the parasitic radiation electrode 48 is grounded via a circuit element 66 (capacitor). Further, a circuit element 65 (capacitor) is connected between the vicinity of the ground end of the parasitic radiation electrode 48 and the electrode 45. A circuit element 61 (inductor) is connected to the shunt between the feed line 44 and the ground conductor 41.

 回路素子63は、電極45,46および電極53による第1給電放射電極の1/4波長共振(基本モード)の周波数を調整する。回路素子64は、電極47および電極52による第2給電放射電極の1/4波長共振(基本モード)の周波数を調整する。回路素子66は無給電放射電極48の1/4波長共振(基本モード)の周波数を調整する。回路素子65は第1給電放射電極による3/4波長共振(3次モード)の周波数を調整する。そして、回路素子62は電極45,46および電極53による第1給電放射電極上の電流強度分布を調整する。このことにより、後に示すように、第1給電放射電極の3/4波長共振と無給電放射電極48の1/4波長共振との結合量を調整し、そのことで複共振による帯域幅を確保する。回路素子61は給電回路のインピーダンスとアンテナ装置のインピーダンスとを整合させる。 The circuit element 63 adjusts the frequency of the 1/4 wavelength resonance (fundamental mode) of the first feeding radiation electrode by the electrodes 45 and 46 and the electrode 53. The circuit element 64 adjusts the frequency of the quarter wavelength resonance (fundamental mode) of the second feeding radiation electrode by the electrode 47 and the electrode 52. The circuit element 66 adjusts the frequency of the 1/4 wavelength resonance (fundamental mode) of the parasitic radiation electrode 48. The circuit element 65 adjusts the frequency of the 3/4 wavelength resonance (third mode) by the first feeding radiation electrode. The circuit element 62 adjusts the current intensity distribution on the first feeding radiation electrode by the electrodes 45 and 46 and the electrode 53. As a result, as shown later, the coupling amount between the ¼ wavelength resonance of the first feeding radiation electrode and the ¼ wavelength resonance of the parasitic radiation electrode 48 is adjusted, thereby ensuring the bandwidth due to the double resonance. To do. The circuit element 61 matches the impedance of the power feeding circuit with the impedance of the antenna device.

 図4(A)、図4(B)は、周波数5GHz帯(4.955GHz)におけるアンテナ装置101の各電極上の電流強度の分布を示す図である。ここで電流強度を濃度で表している。図4(A)に示すアンテナ装置ANT1と図4(B)に示すアンテナ装置ANT2とでは回路素子62の素子値が異なる。各回路素子の素子値は次のとおりである。 4 (A) and 4 (B) are diagrams showing the distribution of current intensity on each electrode of the antenna device 101 in the frequency 5 GHz band (4.955 GHz). Here, the current intensity is expressed by concentration. The antenna device ANT1 shown in FIG. 4A and the antenna device ANT2 shown in FIG. The element values of each circuit element are as follows.

[表1]
―――――――――――――――――――――――
  回路素子  ANT1    ANT2
―――――――――――――――――――――――
  61    1.0nH   1.0nH
  62    0.5nH   1.0nH
  63    2.7nH   3.0nH
  64    3.6pF   2.0pF
  65    0.9pF   0.9pF
  66    0.1pF   0.1pF
―――――――――――――――――――――――
 なお、第1給電放射電極の1/4波長共振の周波数および第2給電放射電極の1/4波長共振の周波数をそれぞれ所定値にするために、回路素子62のインダクタンスの設定にともない、回路素子63,64の素子値もそれぞれ変更している。
[Table 1]
―――――――――――――――――――――――
Circuit element ANT1 ANT2
―――――――――――――――――――――――
61 1.0nH 1.0nH
62 0.5nH 1.0nH
63 2.7nH 3.0nH
64 3.6pF 2.0pF
65 0.9pF 0.9pF
66 0.1 pF 0.1 pF
―――――――――――――――――――――――
In addition, in order to set the frequency of the 1/4 wavelength resonance of the first feeding radiation electrode and the frequency of the quarter wavelength resonance of the second feeding radiation electrode to predetermined values, the circuit element 62 is set with the inductance of the circuit element 62. The element values of 63 and 64 are also changed.

 回路素子62は第1給電放射電極の給電端寄りの位置に直列に挿入されるものであるので、この回路素子62のリアクタンスが変化すれば電極45,46および電極53による第1給電放射電極上の電流分布は変化し、それに伴い磁界強度分布は変化する。第1給電放射電極上の特に無給電放射電極48との平行対向部分(図4(A)、図4(B)において楕円Eで囲んだ部位)の電流強度分布は、第1給電放射電極と無給電放射電極48との磁界結合に影響を与える。したがって、回路素子62のインダクタンスによって第1給電放射電極と無給電放射電極との結合量が変化する。そして、前記複共振による帯域幅が確保されるように前記結合量を最適化する。 Since the circuit element 62 is inserted in series at a position near the feeding end of the first feeding radiation electrode, if the reactance of the circuit element 62 is changed, the circuit element 62 is placed on the first feeding radiation electrode by the electrodes 45 and 46 and the electrode 53. Current distribution changes, and the magnetic field strength distribution changes accordingly. The current intensity distribution on the first feeding radiation electrode, particularly the portion facing the parallel with the parasitic radiation electrode 48 (portion surrounded by an ellipse E in FIGS. 4A and 4B) is the same as that of the first feeding radiation electrode. The magnetic field coupling with the parasitic radiation electrode 48 is affected. Therefore, the amount of coupling between the first feeding radiation electrode and the non-feeding radiation electrode varies depending on the inductance of the circuit element 62. Then, the amount of coupling is optimized so as to ensure the bandwidth due to the double resonance.

 図5(A)は前記アンテナ101のリターンロス(S11)の周波数特性を示す図である。また、図6(A)はアンテナ101の給電点からみたインピーダンスの軌跡をスミスチャート上に表した図である。図5(B)は図5(A)における周波数4GHz~6GHzの範囲について示す図である。同様に、図6(B)は図6(A)における周波数4GHz~6GHzの範囲について示す図である。これらの図において、アンテナ装置ANT1,ANT2の特性を得た回路素子の条件は表1に示したとおりである。 FIG. 5A is a diagram showing the frequency characteristics of the return loss (S11) of the antenna 101. FIG. FIG. 6A is a diagram showing the locus of impedance viewed from the feeding point of the antenna 101 on a Smith chart. FIG. 5B is a diagram showing a frequency range of 4 GHz to 6 GHz in FIG. Similarly, FIG. 6B is a diagram illustrating a frequency range of 4 GHz to 6 GHz in FIG. In these figures, the conditions of the circuit elements that obtain the characteristics of the antenna devices ANT1 and ANT2 are as shown in Table 1.

 図5(A)、図5(B)において、(a),(b),(c),(d)で示す周波数でリターンロスが低くなっている。(a) は第1給電放射電極(45,46,53)の1/4波長共振による1.57GHzの共振、(b) は第2給電放射電極(47,52)の1/4波長共振による2.45GHzの共振、(c) は第1給電放射電極(45,46,53)の3/4波長共振によるほぼ5.0GHzの共振、(d) は無給電放射電極48の1/4波長共振によるほぼ5.5GHzの共振である。 5A and 5B, the return loss is low at the frequencies indicated by (a), (b), (c), and (d). (a) is 1.57 GHz resonance due to 1/4 wavelength resonance of the first feeding radiation electrode (45, 46, 53), and (b) に よ る is due to 1/4 wavelength resonance of the second feeding radiation electrode (47, 52). 2. 45 GHz resonance, (c) is approximately 5.0 GHz resonance due to 3/4 wavelength resonance of the first feeding radiation electrode (45, 46, 53), and (d) 1 / is ¼ wavelength of the parasitic radiation electrode 48. The resonance is approximately 5.5 GHz due to resonance.

図5(A)、図5(B)において、(c) で示す第1給電放射電極の3/4波長共振と、(d) で示す無給電放射電極の1/4波長共振とは磁界結合して複共振状態となっている。図6(A)、図6(B)においてインピーダンス軌跡は5GHz帯でスミスチャートの中心付近を通る。図6(A)、図6(B)から明らかなように、アンテナ装置ANT2に比べてANT1の方がスミスチャートのより中心付近をインピーダンス軌跡が通る。すなわち、アンテナ装置ANT1の方がより整合している。図5(B)から明らかなように、アンテナ装置ANT1では5.1~5.6GHzに亘って-15dBのリターンロスが得られている。アンテナ装置ANT2では4.8~5.6GHzに亘って-7dBのリターンロスが得られている。 5 (A) and 5 (B), (c) 3/4 wavelength resonance of the first feeding radiation electrode indicated by and (d) 1/4 wavelength resonance of the parasitic radiation electrode indicated by are magnetically coupled. Thus, it is in a double resonance state. 6A and 6B, the impedance locus passes through the vicinity of the center of the Smith chart in the 5 GHz band. As apparent from FIGS. 6A and 6B, the impedance locus of ANT1 passes near the center of the Smith chart as compared with the antenna device ANT2. That is, the antenna device ANT1 is more matched. As is clear from FIG. 5B, the antenna apparatus ANT1 has a return loss of −15 dB over 5.1 to 5.6 GHz. In the antenna device ANT2, a return loss of −7 dB is obtained over 4.8 to 5.6 GHz.

 前記1.5GHz帯はGPSの帯域、2.4GHz帯および5GHz帯はともに無線LANの帯域である。このようにして3バンドのアンテナ装置として作用する。 The 1.5 GHz band is a GPS band, and the 2.4 GHz band and the 5 GHz band are both wireless LAN bands. In this way, it functions as a three-band antenna device.

 一般に、一端開放、他端短絡の共振器(1/4波長共振器など)同士を、電界を介して結合(容量性結合)させた場合、結合する側の共振器の共振周波数より低域側に反共振点が発生する。一方、磁界を介して結合(誘導性結合)させた場合には、結合する側の共振器の共振周波数より高域側に反共振点が発生する。 Generally, when one end open and other end short-circuited resonators (quarter wavelength resonators, etc.) are coupled via an electric field (capacitive coupling), the resonance frequency of the resonator on the coupling side is lower. An anti-resonance point is generated. On the other hand, when coupling is performed via a magnetic field (inductive coupling), an anti-resonance point is generated on a higher frequency side than the resonance frequency of the resonator on the coupling side.

 本実施形態では、第1給電放射電極の3/4波長共振と無給電放射電極の1/4波長共振とは磁界結合する。そして、図5(A)、図5(B)において(d) で示す無給電放射電極(結合する側の共振器)の1/4波長共振の周波数は、(c) で示す第1給電放射電極の3/4波長共振の周波数よりも高いので、(d) の共振周波数より高い側に反共振点が生じる。このため、(c) ~(d) の通過帯域に影響を及ぼさないで複共振が生じる。仮に、無給電放射電極の1/4波長共振の周波数が第1給電放射電極の3/4波長共振の周波数よりも低いと、無給電放射電極の1/4波長共振の周波数より高域側に反共振点が生じるため、(c) と(d) の二つの周波数の間に反共振点が生じて、広帯域特性は得られない。 In the present embodiment, the ¼ wavelength resonance of the first feeding radiation electrode and the ¼ wavelength resonance of the parasitic radiation electrode are magnetically coupled. 5 (A) and 5 (B), the frequency of the 1/4 wavelength resonance of the parasitic radiation electrode (resonator on the coupling side) indicated by (d) is the first feeding radiation indicated by (c). Since the frequency is higher than the 3/4 wavelength resonance frequency of the electrode, an antiresonance point is generated on the side higher than the resonance frequency of (d). Therefore, double resonance occurs without affecting the passbands (c) to (d). If the frequency of the quarter-wave resonance of the parasitic radiation electrode is lower than the frequency of the quarter-wave resonance of the first feed radiation electrode, the frequency is higher than the frequency of the quarter-wave resonance of the parasitic radiation electrode. Since an anti-resonance point is generated, an anti-resonance point is generated between the two frequencies (c) and (d), and broadband characteristics cannot be obtained.

 図7(A)、図7(B)、図7(C)はアンテナ装置ANT3,ANT4,ANT5の平面図である。これらの例では基板全体を含む範囲について表している。図7(A)のアンテナ装置ANT3の構造は図1に示したアンテナ装置101と同じである。第1・第2の給電放射電極および無給電放射電極の延びる方向は基板の長辺に沿った方向に限らず、図7(B)のアンテナ装置ANT4に示すように、基板40の短辺に沿った方向であってもよい。また、第1・第2の給電放射電極および無給電放射電極の形成位置は基板40の角部に限らず、図7(C)のアンテナ装置ANT5に示すように、辺に沿った位置であってもよい。 7 (A), 7 (B), and 7 (C) are plan views of the antenna devices ANT3, ANT4, and ANT5. In these examples, the range including the entire substrate is shown. The structure of the antenna device ANT3 in FIG. 7A is the same as that of the antenna device 101 shown in FIG. The extending direction of the first and second feeding radiation electrodes and the non-feeding radiation electrode is not limited to the direction along the long side of the substrate, but on the short side of the substrate 40 as shown in the antenna device ANT4 in FIG. It may be along the direction. Further, the formation positions of the first and second feed radiation electrodes and the non-feed radiation electrode are not limited to the corners of the substrate 40, but are positions along the sides as shown in the antenna device ANT5 in FIG. 7C. May be.

 図7(A)、図7(B)、図7(C)に示すアンテナ装置ANT3,ANT4,ANT5の各回路素子の素子値は異なる。例えばアンテナ装置ANT3,ANT4の各回路素子の素子値は次のとおりである。 The element values of the circuit elements of the antenna devices ANT3, ANT4, and ANT5 shown in FIGS. 7A, 7B, and 7C are different. For example, the element values of the circuit elements of the antenna devices ANT3 and ANT4 are as follows.

[表2]
―――――――――――――――――――――――
  回路素子  ANT3    ANT4
―――――――――――――――――――――――
  61    1.0nH   1.0nH
  62    1.0nH   1.0nH
  63    2.7nH   2.7nH
  64    4.0pF   4.0pF
  65    1.3pF   1.0pF
  66   0.05pF  0.05pF
―――――――――――――――――――――――
 図8(A)は図7(A)に示したアンテナANT3のリターンロスの周波数特性図、図8(B)は図7(B)に示したアンテナANT4のリターンロスの周波数特性図である。図8(A)、図8(B)において、Mkr1~Mkr7の番号は特性図中に三角記号とともに表したマーク番号に対応している。アンテナ装置ANT3,ANT4のいずれにおいても、1.5GHz帯、2.4GHz帯および5GHz帯に低いリターンロス特性が得られている。
[Table 2]
―――――――――――――――――――――――
Circuit element ANT3 ANT4
―――――――――――――――――――――――
61 1.0nH 1.0nH
62 1.0nH 1.0nH
63 2.7 nH 2.7 nH
64 4.0 pF 4.0 pF
65 1.3pF 1.0pF
66 0.05pF 0.05pF
―――――――――――――――――――――――
8A is a frequency characteristic diagram of the return loss of the antenna ANT3 shown in FIG. 7A, and FIG. 8B is a frequency characteristic diagram of the return loss of the antenna ANT4 shown in FIG. 7B. In FIGS. 8A and 8B, the numbers Mkr1 to Mkr7 correspond to the mark numbers represented with the triangle symbols in the characteristic diagrams. In both the antenna devices ANT3 and ANT4, low return loss characteristics are obtained in the 1.5 GHz band, the 2.4 GHz band, and the 5 GHz band.

 このように、基板に対するアンテナ装置の形成位置が異なっていても、各回路素子の素子値を設定すれば、所定の周波数帯域でリターンロス特性が得られるようになる。 As described above, even if the antenna device is formed at different positions on the substrate, the return loss characteristics can be obtained in a predetermined frequency band by setting the element values of the respective circuit elements.

 図9(A)は図1に示したアンテナ装置とは別の実施形態に係るアンテナ装置102の平面図である。このアンテナ装置102は、基板40、この基板40に形成された各種電極、基板40に実装された回路素子62で構成されている。 FIG. 9A is a plan view of an antenna device 102 according to another embodiment different from the antenna device shown in FIG. The antenna device 102 includes a substrate 40, various electrodes formed on the substrate 40, and circuit elements 62 mounted on the substrate 40.

 このアンテナ装置102は図1に示したアンテナ装置101と異なり、チップアンテナ50、電極47、回路素子61,63,64,65,66を備えていない。給電放射電極46Pの給電端に回路素子62が直列接続されている。無給電放射電極48Pの一端はグランド導体41に直接接地されている。その他の構成はアンテナ装置101と同様である。 Unlike the antenna device 101 shown in FIG. 1, the antenna device 102 does not include the chip antenna 50, the electrode 47, and the circuit elements 61, 63, 64, 65, and 66. A circuit element 62 is connected in series to the feeding end of the feeding radiation electrode 46P. One end of the parasitic radiation electrode 48P is directly grounded to the ground conductor 41. Other configurations are the same as those of the antenna device 101.

 図9(B)はアンテナ装置102の概略回路図である。回路素子62はチップインダクタである。このように、給電放射電極の給電端と給電回路との間に回路素子62(インダクタ)が直列接続されている。 FIG. 9B is a schematic circuit diagram of the antenna device 102. The circuit element 62 is a chip inductor. In this way, the circuit element 62 (inductor) is connected in series between the feeding end of the feeding radiation electrode and the feeding circuit.

 回路素子62は給電放射電極46P上の、特に楕円Eで囲んだ部位の電流強度分布を調整する。このことにより、給電放射電極46Pの3/4波長共振と無給電放射電極48Pの1/4波長共振との結合量を調整し、そのことで複共振による帯域幅を確保する。 The circuit element 62 adjusts the current intensity distribution of the portion surrounded by the ellipse E on the feeding radiation electrode 46P. This adjusts the amount of coupling between the ¼ wavelength resonance of the feed radiation electrode 46P and the ¼ wavelength resonance of the parasitic radiation electrode 48P, thereby ensuring a bandwidth due to double resonance.

 このように、1つの給電放射電極と1つの無給電放射電極とを備えたアンテナ装置についても本発明は適用できる。 As described above, the present invention can also be applied to an antenna device including one feeding radiation electrode and one parasitic radiation electrode.

 なお、以上に示した各実施形態では、給電放射電極および無給電放射電極を基板上の電極パターンで構成したが、給電放射電極および無給電放射電極を誘電体基体に形成することでチップアンテナを構成し、このチップアンテナを基板に実装するようにしてもよい。 In each of the embodiments described above, the feeding radiation electrode and the parasitic radiation electrode are configured by the electrode pattern on the substrate. However, the chip antenna is formed by forming the feeding radiation electrode and the parasitic radiation electrode on the dielectric substrate. The chip antenna may be configured and mounted on a substrate.

 また、以上に示した各実施形態では、給電放射電極の高次モードと無給電放射電極の基本モードとが結合して複共振する例を示したが、給電放射電極の高次モードと無給電放射電極の高次モードとが結合して複共振する構成にも同様に適用できる。 Further, in each of the embodiments described above, an example in which the higher-order mode of the feed radiation electrode and the fundamental mode of the feed-off radiation electrode are coupled and double-resonated has been shown. The present invention can be similarly applied to a configuration in which a higher-order mode of the radiation electrode is coupled to cause double resonance.

ANT1~ANT5…アンテナ装置
P11…第1端
P12…第2端
P31…第1端
P32…第2端
40…基板
41…グランド導体
42…グランド導体非形成領域
43…給電電極
44…給電線路
45,46,47…電極
48…無給電放射電極
50…チップアンテナ
52,53…電極
61~66…回路素子
101,102…アンテナ装置
ANT1 to ANT5 ... antenna device P11 ... first end P12 ... second end P31 ... first end P32 ... second end 40 ... substrate 41 ... ground conductor 42 ... ground conductor non-forming region 43 ... feed electrode 44 ... feed line 45, 46, 47 ... electrode 48 ... parasitic radiation electrode 50 ... chip antenna 52, 53 ... electrodes 61-66 ... circuit elements 101, 102 ... antenna device

Claims (2)

 基体およびこの基体に形成された複数の放射電極を有するアンテナにおいて、
 前記放射電極は、高次共振モードを含む複数の共振モードで共振する給電放射電極と、高次共振モードまたは基本共振モードで共振する無給電放射電極とを含み、
 前記給電放射電極の高次共振モードより高い周波数の前記無給電放射電極の共振モードと前記給電放射電極の高次共振モードとで複共振が生じ、
 前記給電放射電極の給電端に回路素子が直列に接続されたことを特徴とするアンテナ装置。
In an antenna having a base and a plurality of radiation electrodes formed on the base,
The radiation electrode includes a feed radiation electrode that resonates in a plurality of resonance modes including a higher order resonance mode, and a parasitic radiation electrode that resonates in a higher order resonance mode or a fundamental resonance mode,
Double resonance occurs between the resonance mode of the non-feed radiation electrode and the higher-order resonance mode of the feed radiation electrode at a frequency higher than the higher-order resonance mode of the feed radiation electrode,
An antenna device, wherein a circuit element is connected in series to a feeding end of the feeding radiation electrode.
 前記給電放射電極は、第1の放射電極とこの第1の放射電極から分岐して延びる第2の放射電極とを含んで構成されている、請求項1に記載のアンテナ装置。 The antenna device according to claim 1, wherein the feeding radiation electrode includes a first radiation electrode and a second radiation electrode extending from the first radiation electrode.
PCT/JP2013/069097 2012-07-30 2013-07-12 Antenna apparatus Ceased WO2014021081A1 (en)

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JP2012168207 2012-07-30

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112913081A (en) * 2018-10-31 2021-06-04 京瓷株式会社 Antenna, wireless communication module and wireless communication device
CN113594678A (en) * 2021-07-30 2021-11-02 维沃移动通信有限公司 Antenna device and electronic apparatus

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Publication number Priority date Publication date Assignee Title
JP2003008326A (en) * 2001-06-20 2003-01-10 Murata Mfg Co Ltd Surface mount type antenna and radio apparatus using the same
JP2005150937A (en) * 2003-11-12 2005-06-09 Murata Mfg Co Ltd Antenna structure and communication apparatus provided with the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003008326A (en) * 2001-06-20 2003-01-10 Murata Mfg Co Ltd Surface mount type antenna and radio apparatus using the same
JP2005150937A (en) * 2003-11-12 2005-06-09 Murata Mfg Co Ltd Antenna structure and communication apparatus provided with the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112913081A (en) * 2018-10-31 2021-06-04 京瓷株式会社 Antenna, wireless communication module and wireless communication device
CN112913081B (en) * 2018-10-31 2024-03-22 京瓷株式会社 Antenna, wireless communication module, and wireless communication device
CN113594678A (en) * 2021-07-30 2021-11-02 维沃移动通信有限公司 Antenna device and electronic apparatus

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