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WO2014014299A3 - 반도체 발광소자 - Google Patents

반도체 발광소자 Download PDF

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Publication number
WO2014014299A3
WO2014014299A3 PCT/KR2013/006458 KR2013006458W WO2014014299A3 WO 2014014299 A3 WO2014014299 A3 WO 2014014299A3 KR 2013006458 W KR2013006458 W KR 2013006458W WO 2014014299 A3 WO2014014299 A3 WO 2014014299A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
semiconductor
electrode
emitting element
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2013/006458
Other languages
English (en)
French (fr)
Other versions
WO2014014299A2 (ko
Inventor
전수근
박은현
김용덕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semicon Light Co Ltd
Original Assignee
Semicon Light Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020120078270A external-priority patent/KR101363495B1/ko
Priority claimed from KR1020120083091A external-priority patent/KR101370575B1/ko
Priority claimed from KR1020130002949A external-priority patent/KR101378946B1/ko
Application filed by Semicon Light Co Ltd filed Critical Semicon Light Co Ltd
Priority to US14/118,599 priority Critical patent/US10535798B2/en
Priority to EP13819478.2A priority patent/EP2782149B1/en
Priority to CN201380004181.9A priority patent/CN104011887A/zh
Publication of WO2014014299A2 publication Critical patent/WO2014014299A2/ko
Publication of WO2014014299A3 publication Critical patent/WO2014014299A3/ko
Anticipated expiration legal-status Critical
Priority to US16/704,574 priority patent/US20200127161A1/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H10W72/20—

Landscapes

  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

본 개시는 복수의 반도체층에 전자와 정공 중의 하나를 공급하는 제1 전극; 복수의 반도체층에 전자와 정공 중의 나머지 하나를 공급하는 제2 전극; 성장 기판 측인 제1 반도체층 측에 구비되며, 활성층에서 생성된 제1 파장의 빛을 제2 파장의 빛으로 전환하는 형광체부; 그리고, 활성층으로부터의 빛을 성장 기판 측인 제1 반도체층 측으로 반사하도록 제2 반도체층 위에 형성되는 비도전성 반사막;으로서, 형광체부에서 전환된 빛을 기준으로 설계된 분포 브래그 리플렉터를 가지는 비도전성 반사막;을 포함하는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.
PCT/KR2013/006458 2012-07-18 2013-07-18 반도체 발광소자 Ceased WO2014014299A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US14/118,599 US10535798B2 (en) 2012-07-18 2013-07-18 Semiconductor light emitting device comprising finger electrodes
EP13819478.2A EP2782149B1 (en) 2012-07-18 2013-07-18 Semiconductor light-emitting device
CN201380004181.9A CN104011887A (zh) 2012-07-18 2013-07-18 半导体发光器件
US16/704,574 US20200127161A1 (en) 2012-07-18 2019-12-05 Semiconductor light emitting device comprising finger electrodes

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR10-2012-0078270 2012-07-18
KR1020120078270A KR101363495B1 (ko) 2012-07-18 2012-07-18 반도체 발광소자
KR10-2012-0083091 2012-07-30
KR1020120083091A KR101370575B1 (ko) 2012-07-30 2012-07-30 반도체 발광소자
KR1020130002949A KR101378946B1 (ko) 2013-01-10 2013-01-10 반도체 발광소자의 제조 방법
KR10-2013-0002949 2013-01-10

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US14/118,599 A-371-Of-International US10535798B2 (en) 2012-07-18 2013-07-18 Semiconductor light emitting device comprising finger electrodes
US16/704,574 Continuation US20200127161A1 (en) 2012-07-18 2019-12-05 Semiconductor light emitting device comprising finger electrodes

Publications (2)

Publication Number Publication Date
WO2014014299A2 WO2014014299A2 (ko) 2014-01-23
WO2014014299A3 true WO2014014299A3 (ko) 2014-03-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2013/006458 Ceased WO2014014299A2 (ko) 2012-07-18 2013-07-18 반도체 발광소자

Country Status (4)

Country Link
US (2) US10535798B2 (ko)
EP (1) EP2782149B1 (ko)
CN (10) CN108598231A (ko)
WO (1) WO2014014299A2 (ko)

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Publication number Publication date
US10535798B2 (en) 2020-01-14
EP2782149A4 (en) 2015-08-05
CN108598230A (zh) 2018-09-28
CN108565323A (zh) 2018-09-21
EP2782149A2 (en) 2014-09-24
EP2782149B1 (en) 2022-10-19
CN108807635A (zh) 2018-11-13
CN108550671A (zh) 2018-09-18
WO2014014299A2 (ko) 2014-01-23
US20140291714A1 (en) 2014-10-02
US20200127161A1 (en) 2020-04-23
CN108550672A (zh) 2018-09-18
CN104011887A (zh) 2014-08-27
CN108493308A (zh) 2018-09-04
CN108598231A (zh) 2018-09-28
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