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WO2014013831A1 - Module and module manufacturing method - Google Patents

Module and module manufacturing method Download PDF

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Publication number
WO2014013831A1
WO2014013831A1 PCT/JP2013/066788 JP2013066788W WO2014013831A1 WO 2014013831 A1 WO2014013831 A1 WO 2014013831A1 JP 2013066788 W JP2013066788 W JP 2013066788W WO 2014013831 A1 WO2014013831 A1 WO 2014013831A1
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WO
WIPO (PCT)
Prior art keywords
module
electronic component
resin layer
substrate
metal film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/066788
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French (fr)
Japanese (ja)
Inventor
秀司 大和
宏通 北嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of WO2014013831A1 publication Critical patent/WO2014013831A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves

Definitions

  • the present invention relates to a module in which an electronic component mounted on a mounting surface of a module substrate is sealed with a resin, and a method for manufacturing the module.
  • a module substrate 501 As shown in a conventional module 500 of FIG. 5, this type of module is a module substrate 501, various electronic components 502 mounted on the mounting surface of the module substrate 501, and a wiring substrate that covers the electronic component 502. And a resin layer 503 provided on the mounting surface 501.
  • the module substrate 501 is formed by laminating a plurality of insulating layers formed of a resin material or a ceramic material.
  • the module substrate 501 includes a pattern electrode formed of a metal material such as Au, Ag, Cu, Pt, or Pd.
  • a wiring electrode 504 made of a via conductor is provided.
  • the resin layer 503 is formed of a thermosetting resin material such as phenol resin or epoxy resin, or a photocurable resin material such as photocurable epoxy resin, polyimide resin, or acrylic resin on the mounting surface of the module substrate 501. It is filled and formed. In this way, the electronic component 502 mounted on the mounting surface of the module substrate 501 is covered with the resin layer 503, so that the electronic component 502 is protected by the resin layer 503.
  • the module 500 is used by being mounted on another board such as a mother board included in various apparatuses, for example, but the resin on the mounting surface of the module board 501 by mounting the electronic component 502 is filled with resin.
  • an adsorption surface for adsorbing and holding the module 500 by the conveyance device having an adsorption mechanism for conveying the module 500 onto another substrate such as a mother substrate is formed by the upper surface of the resin layer 503. Improved handling.
  • JP 2010-80901 A paragraphs 0056, 0057, FIG. 3, etc.
  • an adsorption surface for adsorbing and holding the module 500 by the conveying device that conveys the module 500 onto another substrate such as a mother substrate is formed by the upper surface of the resin layer 503, and the resin layer 503 is the module layer 503. It was a hindrance to the 500 height reduction. Further, in order to prevent the characteristics of the electronic component 502 included in the module 500 from fluctuating or deteriorating due to heat generation, it is desirable to take measures against heat dissipation in the module 500. However, a reduction in the height of the module 500 is required. Therefore, a heat dissipation measure that does not increase the thickness of the module 500 is desired.
  • the present invention has been made in view of the above problems, and has as its first object to provide a technique capable of reducing the height of a module without impairing handling properties, and suppresses an increase in the thickness of the module.
  • a second object is to provide a technique capable of improving the heat dissipation performance.
  • the module of the present invention includes a module substrate, an electronic component mounted on the mounting surface of the module substrate, and the mounting surface so as to cover a side surface of the electronic component. And an upper surface of each of the electronic component and the resin layer forms the same surface.
  • the module manufacturing method of the present invention includes a step of mounting an electronic component on the mounting surface of the module substrate, and a step of forming a resin layer by filling the mounting surface with resin so as to cover the side surface of the electronic component. And a step of grinding or polishing the resin layer and the electronic component such that the upper surfaces of the electronic component and the resin layer form the same surface.
  • the same surface is formed by the upper surface of each of the electronic component mounted on the mounting surface of the module substrate and the resin layer provided on the mounting surface so as to cover the side surface of the electronic component. . Therefore, even though the thickness of the resin layer is suppressed by the thickness of the electronic component, the module is transported by the transport device by holding the same surface formed by the upper surfaces of the electronic component and the resin layer by suction. Therefore, it is possible to reduce the height of the module without impairing handling properties.
  • the module of the present invention is characterized in that a metal film is formed on at least a part of the upper surfaces of the electronic component and the resin layer.
  • the module manufacturing method of the present invention is further characterized by further comprising a step of forming a metal film on at least a part of the upper surfaces of the electronic component and the resin layer.
  • the electronic component provided on the mounting surface of the module substrate and the metal film formed on at least a part of the upper surface of the resin layer function as a heat sink, so screen printing, vapor deposition, sputtering, etc.
  • the resin layer may be provided on the periphery of the electronic component with a conductor wall disposed so that one principal surface thereof faces the side surface of the electronic component connected to the metal film.
  • a conductor via connected to the metal film may be provided around the electronic component.
  • the heat generated in the electronic component is dissipated from the metal film on the top surface of the resin layer through the conductor walls and conductor vias provided around the electronic component of the resin layer, so the heat dissipation of the module Can be further improved.
  • the metal film is provided so as to cover an upper surface of the electronic component, and a conductor for electrically connecting the metal film and a wiring electrode formed on the module substrate is provided on the resin layer. It may be done.
  • the metal film provided to cover the upper surface of the electronic component is electrically connected to the wiring electrode formed on the module substrate via the conductor provided on the resin layer. Since it functions as a shield electrode, the shield performance of the module can be improved. Further, if a conductor wall or a conductor via connected to a metal film electrically connected to the wiring electrode formed on the module substrate via a conductor is provided around the electronic component of the resin layer, the module substrate When other electronic components are mounted on the mounting surface, electrical interference between the electronic components can be suppressed.
  • the electronic component includes an element substrate formed of a piezoelectric body, an insulating layer disposed so as to surround a predetermined region of one main surface of the element substrate, and the element substrate stacked on the insulating layer.
  • a cover layer forming a space surrounded by the insulating layer, and a SAW filter element formed by providing a comb electrode in the predetermined region, the cover layer facing the mounting surface
  • the upper surface formed by the other main surface of the element substrate may be exposed from the resin layer and mounted on the mounting surface.
  • the cover layer is arranged in a laminated manner on the insulating layer disposed so as to surround a predetermined region of one main surface of the element substrate formed by the piezoelectric substrate, so that the gap between the element substrate and the cover layer is achieved.
  • An electronic component having a SAW filter element formed by providing a comb electrode in a predetermined region of the element substrate in a space formed by being surrounded by an insulating layer is provided with a cover layer facing the mounting surface. The upper surface formed by the other main surface of the substrate is exposed from the resin layer and mounted on the mounting surface of the module substrate.
  • an electronic component having a SAW filter element is not a structure in which a SAW filter element is provided on a package substrate formed of a resin material or a ceramic material as in the prior art, but a comb-tooth electrode is provided directly on a piezoelectric substrate. Since the device substrate formed in this way is formed into a wafer level-chip size package (WL-CSP) structure that is cut out, the module formed by mounting electronic components on the module substrate is further reduced in height and size Can be achieved.
  • WL-CSP wafer level-chip size package
  • the electronic component is mounted on the mounting surface of the module substrate, and the mounting surface and the cover layer are formed by filling the resin between the mounting surface and the cover layer of the electronic component to form a resin layer.
  • the strength of the cover layer of the electronic component can be improved.
  • the metal film is provided on the other main surface of the element substrate (piezoelectric element), heat generated by applying electric power to the comb electrodes provided in a predetermined region of the one main surface of the element substrate is generated. Since the heat is efficiently dissipated through the metal film, it is possible to prevent the generated heat from damaging the SAW filter element or changing or deteriorating the characteristics of the SAW filter element. Therefore, the power dissipation of the electronic component can be improved by improving the heat dissipation of the module.
  • the same surface is formed by the upper surface of each of the electronic component mounted on the mounting surface of the module substrate and the resin layer provided on the mounting surface so as to cover the side surface of the electronic component.
  • the module can be transported by the transport device by sucking and holding the same surface formed by the upper surfaces of the electronic component and the resin layer, The module can be reduced in height without impairing handling properties.
  • FIG. 1 is a diagram showing a first embodiment of a module including the electronic component of the present invention.
  • FIG. 2 is a block diagram showing an electrical configuration of the module of FIG.
  • 3 and 4 showing the second and third embodiments described later are also illustrated in the same manner as in FIG. 1, and thus the description thereof is omitted below.
  • a module 1 shown in FIGS. 1 and 2 is mounted on a mother board provided in a communication portable terminal such as a mobile phone or a portable information terminal.
  • the module 1 includes a transmission filter element 14 and a reception filter element 15.
  • a duplexer 10 duplexer: equivalent to the “electronic component” of the present invention
  • a module substrate 2 a matching circuit 3
  • a ground electrode 4 and various electronic components such as a switch IC, a filter, a resistor, a capacitor, and a coil.
  • a resin layer 7 and a metal film 8 are provided and formed as a high-frequency antenna switch module.
  • the module 1 is mounted on the mother board, the module 1 is connected to various signal lines and power lines such as the antenna line ANT, the ground line GND, the transmission signal line Tx, and the reception signal line Rx provided in the mother board.
  • various signal lines and power lines such as the antenna line ANT, the ground line GND, the transmission signal line Tx, and the reception signal line Rx provided in the mother board.
  • transmission / reception signals are input / output between the mother board and the module 1.
  • the module substrate 2 is integrally formed as a ceramic laminate by laminating and firing a plurality of dielectric layers formed of ceramic green sheets. That is, the ceramic green sheet forming each dielectric layer is a sheet in which a slurry in which a mixed powder such as alumina and glass is mixed with an organic binder and a solvent is formed into a sheet by a molding machine. So that it can be fired at a low temperature. Then, via holes are formed on the ceramic green sheet cut into a predetermined shape by laser processing, etc., and the formed via holes are filled with a conductive paste containing Ag, Cu, etc. Via conductors are formed, various electrode patterns are formed by printing with a conductive paste, and each dielectric layer is formed.
  • via conductors and electrode patterns are appropriately formed in each dielectric layer, so that wiring for connecting the duplexer 10 mounted on the module substrate 2 and electronic components such as the chip coil 3a to the module substrate 2 A pattern 5, a ground electrode 4, a mounting electrode 6 and the like are formed. That is, the electrode pattern and the via conductor are appropriately provided in each dielectric layer to form the ground electrode 4, the wiring pattern 5, the mounting electrode 6, and the like, so that the duplexer 10 mounted on the module substrate 2 and Electronic components such as the chip coil 3a and the mounting electrode 6 are electrically connected to each other.
  • a circuit element such as a capacitor or a coil is formed by the electrode pattern and via conductor formed in each dielectric layer, or a filter circuit or a matching circuit 3 is formed by the formed circuit element such as a capacitor or coil. May be.
  • the matching circuit 3 is formed by a chip coil 3a which is a chip component mounted on the mounting surface 2a of the module substrate 2, and is provided on the output side of the transmission filter element 14 and the input side of the reception filter element 15. It is connected via the common terminal 17 c of the duplexer 10.
  • the ground electrode 4 is disposed below the duplexer 10, provided on the mounting surface 2 a of the module substrate 2, and electrically connected to the ground line GND.
  • the ground electrode 4 is connected to the ground terminal electrode of the duplexer 10 by a connection electrode such as a solder ball (not shown).
  • the resin layer 7 is provided on the mounting surface 2 a so as to cover the side surface of the duplexer 10, and the same surface is formed by the upper surfaces of the duplexer 10 and the resin layer 7.
  • the height from the mounting surface 2a of the duplexer 10 is the highest, and the other electronic components are mounted on the mounting surface 2a.
  • a device whose height is lower than the height of the duplexer 10 is mounted on the mounting surface 2a.
  • the metal film 8 is formed of a metal such as Au (gold), Ag (silver), or Cu (copper) on the top surfaces of the duplexer 10 and the resin layer 7 by a method such as screen printing, vapor deposition, or sputtering. .
  • the duplexer 10 has a wafer level-chip size package (WL-CSP) structure, an element substrate 11, an insulating layer 12, a cover layer 13, and a transmission filter element 14 and a reception that have different high-frequency signal pass bands. And a filter element 15.
  • WL-CSP wafer level-chip size package
  • the element substrate 11 is formed of a piezoelectric body such as lithium niobate, lithium tantalate, or quartz. Further, comb electrodes 14a and 15a (IDT electrodes) formed of Al, Cu, or the like are provided in a predetermined region of one main surface 11a of the element substrate 11 to constitute a SAW (surface acoustic wave) filter element.
  • the transmission filter element 14 and the reception filter element 15 are formed by the SAW filter elements constituted by the comb electrodes 14a and 15a, respectively.
  • the duplexer 10 includes a transmission terminal 17 a connected to the input side of the transmission filter element 14, a reception terminal 17 b connected to the output side of the reception filter element 15, and the output side and reception of the transmission filter element 14.
  • a common terminal 17c (antenna terminal) connected to the input side of the filter element 15 and a ground terminal 17d are provided.
  • the reception filter element 15 has a balanced output type reception filter.
  • a terminal electrode 14b connected to the comb electrode 14a forming the transmission filter element 14 and a terminal connected to the comb electrode 15a forming the reception filter element 15 are provided on one main surface 11a of the element substrate 11.
  • An electrode 15b is provided on one main surface 11a of the element substrate 11.
  • the insulating layer 12 is disposed so as to surround a predetermined region in which the comb electrodes 14a and 15a on one main surface 11a of the element substrate 11 are provided.
  • the insulating layer 12 is formed by forming a resin layer on one main surface 11a of the element substrate 11 provided with the comb electrodes 14a and 15a and the terminal electrodes 14b and 15b by using a photosensitive epoxy resin or polyimide resin. Later, through a photolithography process, the resin layer is removed from the predetermined region where the comb electrodes 14a and 15a are provided and the region of the terminal electrodes 14b and 15b.
  • the cover layer 13 is laminated on the insulating layer 12 to form a space surrounded by the insulating layer 12 between the cover layer 13 and the element substrate 11, and the comb electrodes 14a and 15a (transmission filter elements) are formed in the formed space. 14 and the reception filter element 15) are arranged.
  • the cover layer 13 may be formed by, for example, filling a connection hole of a resin layer that is laminated on the insulating layer 12 with a photosensitive epoxy resin or polyimide resin through a photolithography process with a paste of Cu or Al or via-filling.
  • the electrodes 14c and 15c connected to the terminal electrodes 14b and 15b are formed by plating.
  • the duplexer 10 is formed by forming mounting solder balls 14d and 15d on the electrodes 14c and 15c that are connected to the connection terminals 14b and 15b and exposed from the cover layer 13, respectively.
  • the transmission filter element 14 and the reception filter element 15 included in the duplexer 10 are formed by SAW filter elements.
  • the element substrate 11 from, for example, a Si substrate
  • the transmission filter element is formed.
  • 14 and the reception filter element 15 may be formed of BAW filter elements.
  • the cover layer 13 faces the mounting surface 2 a of the module substrate 2, and the upper surface formed by the other main surface of the element substrate 11 is exposed from the resin layer 7 and mounted on the mounting surface 2 a. ing.
  • via holes are formed on a ceramic green sheet formed in a predetermined shape with a laser or the like, and a conductor paste is filled inside or via fill plating is performed to form a via conductor (wiring pattern 5) for interlayer connection.
  • Electrode patterns such as the mounting electrode 2a, the ground electrode 4, the land-like wiring pattern 5 and the mounting electrode 6 on the mounting surface 2a are printed with a conductive paste to form each dielectric layer constituting the module substrate 2.
  • a ceramic green sheet is prepared. Each ceramic green sheet is provided with a plurality of via conductors and electrode patterns so that a large number of module substrates 2 can be formed at a time.
  • each dielectric layer is laminated to form a laminate.
  • substrate 2 after baking is formed so that the area
  • the assembly of the module substrates 2 is formed by firing the laminate at a low temperature.
  • various electronic components such as the duplexer 10 and the chip coil 3 a are mounted on the mounting surface 2 a of the assembly of the module substrates 2.
  • the mounting surface 2 a of the assembly of the module substrates 2 is filled with resin so as to cover the side surfaces of the duplexer 10, and the resin layer 7 is provided on each module substrate 2 by heat curing.
  • an assembly of modules 1 is formed.
  • the resin layer 7 and the element substrate 11 of the duplexer 10 are ground or polished so that the respective top surfaces of the duplexer 10 and the resin layer 7 form the same surface. Then, after the metal film 8 is formed on the surfaces formed by the top surfaces of the duplexer 10 and the resin layer 7, the assembly of the modules 1 is divided individually, and the module 1 is completed.
  • the transmission signal output from the transmission signal line Tx of the mother board to the transmission terminal 17a of the duplexer 10 via the mounting electrode 6 and the wiring pattern 5 is transmitted to the transmission filter element 14.
  • the A reception signal input from the antenna line ANT of the mother board to the common terminal 17c of the duplexer 10 via the mounting electrode 6 and the wiring pattern 5 (matching circuit 3) is input to the reception filter element 15.
  • Predetermined filtering is performed, the signal is output from the reception terminal 17 b to the module substrate 2, and is output to the reception signal line Rx of the mother substrate via the wiring pattern 5 and the mounting electrode 6.
  • the module substrate 2 provided with the wiring pattern 5 and the module 1 including the duplexer 10 having the WL-CSP structure are not limited to the above-described manufacturing method, and may be formed by a known general manufacturing method.
  • the module substrate 2 can be formed of a printed circuit board, LTCC, alumina substrate, glass substrate, composite material substrate, single layer substrate, multilayer substrate, etc. using resin, ceramic, polymer material, etc. What is necessary is just to form the module board
  • each of the duplexer 10 mounted on the mounting surface 2a of the module substrate 2 and the resin layer 7 provided on the mounting surface 2a so as to cover the side surface of the duplexer 10 are provided.
  • the same surface is formed by the upper surface of each. Therefore, although the thickness of the resin layer 7 is suppressed to the thickness of the duplexer 10, the same surface formed by the upper surfaces of the duplexer 10 and the resin layer 7 is held by suction, etc. Since the module 1 can be transported by a transport device (not shown) having the above, the module 1 can be reduced in height without impairing handling properties.
  • the demultiplexing is performed by a method such as screen printing, vapor deposition, or sputtering.
  • a method such as screen printing, vapor deposition, or sputtering.
  • the cover layer 13 is laminated and disposed on the insulating layer 12 disposed so as to surround a predetermined region of the one main surface 11a of the element substrate 11 formed of the piezoelectric substrate, whereby the element substrate 11, the cover layer 13, A duplexer 10 having a SAW filter element formed by providing comb electrodes 14a and 15a in a predetermined region of the element substrate 11 in a space formed by being surrounded by an insulating layer 12 between The layer 13 faces the mounting surface 2 a, and the upper surface formed by the other main surface of the element substrate 11 is exposed from the resin layer 7 and mounted on the mounting surface 2 a of the module substrate 2.
  • the duplexer 10 including the SAW filter element is not a structure in which the SAW filter element is provided on the package substrate formed of a resin material or a ceramic material as in the conventional case, but the comb-tooth electrode 14a directly on the piezoelectric substrate. , 15a is formed in a wafer level-chip size package (WL-CSP) structure in which the element substrate 11 is cut out, and thus the duplexer 10 is mounted on the module substrate 2 and formed.
  • the module 1 can be further reduced in height and size.
  • the resin layer 7 is also formed by filling the resin between the mounting surface 2a and the cover layer 13 of the duplexer 10. Therefore, the mounting strength of the duplexer 10 can be improved by the resin filled between the mounting surface 2a and the cover layer 13, and the strength of the cover layer 13 of the duplexer 10 can be improved.
  • the metal film 8 is provided on the other main surface of the element substrate 11 formed of the piezoelectric element, power is supplied to the comb electrodes 14a and 15a provided in a predetermined region of the one main surface 11a of the element substrate 11. Since the heat generated by the application is efficiently dissipated through the metal film 8, the generated heat may damage the SAW filter element, or the characteristics of the SAW filter element may fluctuate or deteriorate. Can be prevented. Therefore, the heat resistance of the duplexer 10 can be improved by improving the heat dissipation of the module 1.
  • the adsorption by the adsorption mechanism of the transport device is obstructed.
  • a minute unevenness is formed on the upper surface of the module 1 to such an extent that it does not occur.
  • the metal film 8 is formed on the upper surface of the module 1 having minute irregularities, the minute irregularities are formed on the upper surface of the metal film 8, so that the heat dissipation efficiency by the metal film 8 functioning as a heat sink is improved. be able to.
  • the chip coil 3a is mounted on the mounting surface 2a of the module substrate 2 in order to form the matching circuit 3 connected to the transmission filter element 14 and the reception filter element 15, but the transmission filter element 14 or a chip component such as a chip capacitor is mounted on the mounting surface 2a together with the chip coil 3a or in place of the chip coil 3a according to the configuration of the circuit connected to the reception filter element 15 or 14. Also good.
  • FIG. 3 is a diagram showing a second embodiment of the module of the present invention.
  • This embodiment is different from the first embodiment described above in that, as shown in FIG. 3, one main surface facing the side surface of the duplexer 10 is in contact with the periphery of the duplexer 10 of the resin layer 7.
  • the conductive wall 8 a (corresponding to the “conductor” of the present invention) is provided connected to the metal film 8.
  • the metal film 8 provided so as to cover the upper surface of the duplexer 10 (the other main surface of the element substrate 11) and the wiring pattern 5 provided on the module substrate 2, it is connected to the ground line GND.
  • the wiring pattern 5 is electrically connected by the conductor wall 8a.
  • the side surface of the resin layer 7 is also covered with the metal film 8. Since other configurations are the same as those in the first embodiment, description of the configuration is omitted by giving the same reference numerals.
  • the metal film 8 provided so as to cover the upper surface of the duplexer 10 is electrically connected to the wiring pattern 5 formed on the module substrate 2 via the conductor wall 8 a provided on the resin layer 7. As a result, it is grounded and functions as a shield electrode, so that the shielding property of the module 1 can be improved.
  • the conductor wall 8a that is electrically connected to the wiring pattern 5 of the module substrate 2 and is grounded is provided around the duplexer 10, the conductor wall 8a is mounted on the mounting surface 2a of the module substrate 2. The electrical interference between the electronic component (chip coil 3a and the like) and the duplexer 10 can be suppressed.
  • the heat dissipation efficiency of the module 1 can be further improved.
  • the conductor wall 8a is disposed in contact with the side surface of the duplexer 10 in order to improve the thermal conductivity. However, a gap is provided between the conductor wall 8a and the duplexer 10. In this state, the conductor wall 8 a may be disposed around the duplexer 10 of the resin layer 7.
  • FIG. 4 is a diagram showing a third embodiment of the module of the present invention.
  • this embodiment is different from the second embodiment described above in that a via conductor 8b connected to the metal film 8 around the duplexer 10 of the resin layer 7 (the “conductor” of the present invention). Is equivalent).
  • the metal film 8 provided so as to cover the upper surface of the duplexer 10 (the other main surface of the element substrate 11) and the wiring pattern 5 provided on the module substrate 2, it is connected to the ground line GND.
  • the wiring pattern 5 is electrically connected by the via conductor 8b. Since other configurations are the same as those in the first embodiment, description of the configuration is omitted by giving the same reference numerals.
  • the duplexer 10 is described as an example of the electronic component of the present invention.
  • the electronic component may be a semiconductor element such as a BAW filter, a power amplifier, or a switch IC. It may be anything.
  • the metal film 8 only needs to be provided on at least a part of the upper surface of the module 1.
  • the module in which one duplexer is mounted on the module substrate has been described as an example.
  • a module is formed by mounting two or more duplexers on the module substrate.
  • a switch IC may be mounted on the module substrate, and a duplexer to be used may be selected and switched by the switch IC from a plurality of duplexers mounted on the module substrate.
  • the transmission filter element 14 and the reception filter element 15 are arranged in the same space, but two spaces surrounded by the insulating layer 12 are formed between the element substrate 11 and the cover layer 13.
  • the transmission filter element 14 and the reception filter element 15 may be arranged in each space.
  • the transmission filter element 14 and the reception filter element 15 are separated from each other in structure, so that, for example, heat generated when power is applied to the transmission filter element 14 is generated by the reception filter element 15. The influence on the characteristics can be suppressed.
  • the transmission filter element and the reception filter element can be configured as individual electronic components and mounted on the mounting surface 2a of the module substrate 2 to achieve the same effect.
  • the duplexer 10 formed as WL-CSP integrally including the transmission filter element 14 and the reception filter element 15 has been described as an example, but a plurality of element substrates, cover layers, and A duplexer may be formed by an insulating layer.
  • Two WL-CSP elements each having a reception filter element arranged in a space surrounded by an insulating layer formed between the element substrate and the cover layer are prepared, and these two elements are connected to the module substrate 2.
  • a duplexer may be configured by mounting on the board.
  • the present invention can be widely applied to modules in which electronic components mounted on a mounting surface of a module substrate are sealed with resin.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Description

モジュールおよびこのモジュールの製造方法Module and method for manufacturing the module

 本発明は、モジュール基板の実装面上に実装された電子部品が樹脂で封止されたモジュールおよびこのモジュールの製造方法に関する。 The present invention relates to a module in which an electronic component mounted on a mounting surface of a module substrate is sealed with a resin, and a method for manufacturing the module.

 従来、センサ機能やフィルタ機能等を有する電子部品がモジュール基板に実装されて成る各種のモジュールが知られている。この種のモジュールは、図5の従来のモジュール500に示すように、モジュール基板501と、モジュール基板501の実装面上に実装された各種の電子部品502と、電子部品502を被覆して配線基板501の実装面上に設けられた樹脂層503とを備えている。モジュール基板501は、樹脂材料やセラミック材料により形成された複数の絶縁層が積層されて成り、モジュール基板501には、Au,Ag、Cu、Pt、Pd等の金属材料により形成されたパターン電極やビア導体から成る配線電極504が設けられている。 Conventionally, various modules in which electronic components having a sensor function, a filter function, and the like are mounted on a module substrate are known. As shown in a conventional module 500 of FIG. 5, this type of module is a module substrate 501, various electronic components 502 mounted on the mounting surface of the module substrate 501, and a wiring substrate that covers the electronic component 502. And a resin layer 503 provided on the mounting surface 501. The module substrate 501 is formed by laminating a plurality of insulating layers formed of a resin material or a ceramic material. The module substrate 501 includes a pattern electrode formed of a metal material such as Au, Ag, Cu, Pt, or Pd. A wiring electrode 504 made of a via conductor is provided.

 また、樹脂層503は、フェノール樹脂やエポキシ樹脂などの熱硬化性の樹脂材料や、光硬化性のエポキシ樹脂やポリイミド樹脂、アクリル樹脂などの光硬化性の樹脂材料がモジュール基板501の実装面上に充填されて形成される。このように、モジュール基板501の実装面上に実装された電子部品502が樹脂層503に被覆されることにより、電子部品502が樹脂層503により保護される。また、モジュール500は、例えば、各種装置が備えるマザー基板等の他の基板に実装されて使用されるが、電子部品502が実装されることによるモジュール基板501の実装面上の凹凸に樹脂が充填されることによって、モジュール500をマザー基板等の他の基板上に搬送する吸着機構を備える搬送装置がモジュール500を吸着保持するための吸着面が樹脂層503の上面により形成されるので、モジュール500のハンドリング性が向上する。 The resin layer 503 is formed of a thermosetting resin material such as phenol resin or epoxy resin, or a photocurable resin material such as photocurable epoxy resin, polyimide resin, or acrylic resin on the mounting surface of the module substrate 501. It is filled and formed. In this way, the electronic component 502 mounted on the mounting surface of the module substrate 501 is covered with the resin layer 503, so that the electronic component 502 is protected by the resin layer 503. In addition, the module 500 is used by being mounted on another board such as a mother board included in various apparatuses, for example, but the resin on the mounting surface of the module board 501 by mounting the electronic component 502 is filled with resin. As a result, an adsorption surface for adsorbing and holding the module 500 by the conveyance device having an adsorption mechanism for conveying the module 500 onto another substrate such as a mother substrate is formed by the upper surface of the resin layer 503. Improved handling.

特開2010-80901号公報(段落0056,0057、図3など)JP 2010-80901 A (paragraphs 0056, 0057, FIG. 3, etc.)

 ところで、近年、GSM(登録商標)(Global System for Mobile Communications)規格やCDMA(Code Division Multiple Access)規格など、複数の通信規格による通信をサポートする携帯電話や携帯情報端末などの通信携帯端末が急速に普及している。これらの通信携帯端末が備えるマザー基板には、周波数の異なる送信信号および受信信号を分波する分波器(デュプレクサ)や送信信号を増幅するパワーアンプ、受信信号を増幅するローノイズアンプ等を備えるモジュールなどが搭載されるが、通信携帯端末のさらなる薄型化が要求されており、マザー基板に搭載されるモジュールのさらなる低背化が要望されている。 By the way, in recent years, mobile communication terminals such as mobile phones and personal digital assistants that support communication according to a plurality of communication standards such as GSM (registered trademark) (Global System for Mobile Communications) standard and CDMA (Code Division Multiple Access) standard have been rapidly increasing. Is popular. The mother board provided in these communication portable terminals has a duplexer that demultiplexes transmission signals and reception signals having different frequencies, a power amplifier that amplifies the transmission signals, a low noise amplifier that amplifies the reception signals, and the like. However, there is a demand for further reduction in the thickness of the communication portable terminal, and a further reduction in the height of the module mounted on the mother board is desired.

ところが、従来では、モジュール500をマザー基板等の他の基板上に搬送する搬送装置がモジュール500を吸着保持するための吸着面が樹脂層503の上面により形成されており、この樹脂層503がモジュール500の低背化の妨げになっていた。また、発熱によりモジュール500が備える電子部品502の特性が変動したり劣化したりするのを防止するために、モジュール500に放熱対策を施すのが望ましいが、モジュール500の低背化が要求されているため、モジュール500の厚みの増大が伴わない放熱対策が要望されている。 However, conventionally, an adsorption surface for adsorbing and holding the module 500 by the conveying device that conveys the module 500 onto another substrate such as a mother substrate is formed by the upper surface of the resin layer 503, and the resin layer 503 is the module layer 503. It was a hindrance to the 500 height reduction. Further, in order to prevent the characteristics of the electronic component 502 included in the module 500 from fluctuating or deteriorating due to heat generation, it is desirable to take measures against heat dissipation in the module 500. However, a reduction in the height of the module 500 is required. Therefore, a heat dissipation measure that does not increase the thickness of the module 500 is desired.

 この発明は、上記した課題に鑑みてなされたものであり、ハンドリング性を損なわずにモジュールを低背化できる技術を提供することを第1の目的とし、モジュールの厚みが増大するのを抑制しつつ放熱性を改善することができる技術を提供することを第2の目的とする。 The present invention has been made in view of the above problems, and has as its first object to provide a technique capable of reducing the height of a module without impairing handling properties, and suppresses an increase in the thickness of the module. A second object is to provide a technique capable of improving the heat dissipation performance.

 上記した第1の目的を達成するために、本発明のモジュールは、モジュール基板と、前記モジュール基板の実装面上に実装された電子部品と、前記電子部品の側面を被覆するように前記実装面上に設けられた樹脂層とを備え、前記電子部品および前記樹脂層それぞれの上面が同一面を形成することを特徴としている。 In order to achieve the first object, the module of the present invention includes a module substrate, an electronic component mounted on the mounting surface of the module substrate, and the mounting surface so as to cover a side surface of the electronic component. And an upper surface of each of the electronic component and the resin layer forms the same surface.

 また、本発明のモジュールの製造方法は、モジュール基板の実装面に電子部品を実装する工程と、前記電子部品の側面を被覆するように前記実装面に樹脂を充填して樹脂層を形成する工程と、前記電子部品および前記樹脂層それぞれの上面が同一面を形成するように前記樹脂層および前記電子部品を研削または研磨する工程とを備えることを特徴としている。 The module manufacturing method of the present invention includes a step of mounting an electronic component on the mounting surface of the module substrate, and a step of forming a resin layer by filling the mounting surface with resin so as to cover the side surface of the electronic component. And a step of grinding or polishing the resin layer and the electronic component such that the upper surfaces of the electronic component and the resin layer form the same surface.

 このように構成された発明では、モジュール基板の実装面上に実装された電子部品および電子部品の側面を被覆するように実装面上に設けられた樹脂層それぞれの上面により同一面が形成される。したがって、樹脂層の厚みが電子部品の厚みに抑制されているのにも関わらず、電子部品および樹脂層それぞれの上面により形成される同一面を吸着保持等して搬送装置によりモジュールを搬送することができるので、ハンドリング性を損なわずにモジュールを低背化することができる。 In the invention configured as described above, the same surface is formed by the upper surface of each of the electronic component mounted on the mounting surface of the module substrate and the resin layer provided on the mounting surface so as to cover the side surface of the electronic component. . Therefore, even though the thickness of the resin layer is suppressed by the thickness of the electronic component, the module is transported by the transport device by holding the same surface formed by the upper surfaces of the electronic component and the resin layer by suction. Therefore, it is possible to reduce the height of the module without impairing handling properties.

 また、上記した第2の目的を達成するために、本発明のモジュールは、前記電子部品および前記樹脂層の上面の少なくとも一部に金属膜が形成されていることを特徴としている。 In order to achieve the second object, the module of the present invention is characterized in that a metal film is formed on at least a part of the upper surfaces of the electronic component and the resin layer.

 また、本発明のモジュールの製造方法は、前記電子部品および前記樹脂層の上面の少なくとも一部に金属膜を形成する工程をさらに備えることを特徴としている。 The module manufacturing method of the present invention is further characterized by further comprising a step of forming a metal film on at least a part of the upper surfaces of the electronic component and the resin layer.

 このように構成された発明では、モジュール基板の実装面上に設けられた電子部品および樹脂層の上面の少なくとも一部に形成された金属膜がヒートシンクとして機能するので、スクリーン印刷や蒸着、スパッタ等の手法により電子部品および樹脂層の上面の少なくとも一部に金属膜を薄く形成することにより、モジュールの厚みが増大するのを抑制しつつモジュールの放熱性を改善することができる。 In the invention configured as described above, the electronic component provided on the mounting surface of the module substrate and the metal film formed on at least a part of the upper surface of the resin layer function as a heat sink, so screen printing, vapor deposition, sputtering, etc. By forming the metal film thinly on at least a part of the upper surfaces of the electronic component and the resin layer by this method, the heat dissipation of the module can be improved while suppressing an increase in the thickness of the module.

 また、前記樹脂層の前記電子部品の周辺に該電子部品の側面にその一主面が対向するように配置された導体壁が前記金属膜に接続されて設けられていてもよく、前記樹脂層の前記電子部品の周辺に前記金属膜に接続された導体ビアが設けられていてもよい。 The resin layer may be provided on the periphery of the electronic component with a conductor wall disposed so that one principal surface thereof faces the side surface of the electronic component connected to the metal film. A conductor via connected to the metal film may be provided around the electronic component.

 このように構成すると、電子部品で発生した熱が、樹脂層の電子部品の周辺に設けられた導体壁や導体ビアを介して樹脂層の上面の金属膜から放熱されるので、モジュールの放熱性をさらに改善することができる。 With this configuration, the heat generated in the electronic component is dissipated from the metal film on the top surface of the resin layer through the conductor walls and conductor vias provided around the electronic component of the resin layer, so the heat dissipation of the module Can be further improved.

 また、前記金属膜は前記電子部品の上面を被覆して設けられており、前記樹脂層には、前記金属膜と前記モジュール基板に形成された配線電極とを電気的に接続する導電体が設けられていてもよい。 The metal film is provided so as to cover an upper surface of the electronic component, and a conductor for electrically connecting the metal film and a wiring electrode formed on the module substrate is provided on the resin layer. It may be done.

 このように構成すれば、電子部品の上面を被覆して設けられた金属膜が、樹脂層に設けられた導電体を介してモジュール基板に形成された配線電極と電気的に接続されることによりシールド電極として機能するので、モジュールのシールド性を向上させることができる。また、モジュール基板に形成された配線電極と導電体を介して電気的に接続された金属膜に接続された導体壁や導体ビアが樹脂層の電子部品の周辺に設けられていれば、モジュール基板の実装面上に他の電子部品が実装されている場合に、電子部品間の電気的な干渉を抑制することができる。 With this configuration, the metal film provided to cover the upper surface of the electronic component is electrically connected to the wiring electrode formed on the module substrate via the conductor provided on the resin layer. Since it functions as a shield electrode, the shield performance of the module can be improved. Further, if a conductor wall or a conductor via connected to a metal film electrically connected to the wiring electrode formed on the module substrate via a conductor is provided around the electronic component of the resin layer, the module substrate When other electronic components are mounted on the mounting surface, electrical interference between the electronic components can be suppressed.

 また、前記電子部品は、圧電体により形成された素子基板と、前記素子基板の一方の主面の所定領域を囲繞して配置された絶縁層と、前記絶縁層に積層配置されて前記素子基板との間に前記絶縁層により囲繞された空間を形成するカバー層と、前記所定領域にくし歯電極が設けられることにより形成されたSAWフィルタ素子とを備え、前記カバー層が前記実装面に対向し、前記素子基板の他方の主面により形成される上面が前記樹脂層から露出して前記実装面に実装されていてもよい。 The electronic component includes an element substrate formed of a piezoelectric body, an insulating layer disposed so as to surround a predetermined region of one main surface of the element substrate, and the element substrate stacked on the insulating layer. A cover layer forming a space surrounded by the insulating layer, and a SAW filter element formed by providing a comb electrode in the predetermined region, the cover layer facing the mounting surface The upper surface formed by the other main surface of the element substrate may be exposed from the resin layer and mounted on the mounting surface.

このように構成すると、圧電基板により形成された素子基板の一方の主面の所定領域を囲繞して配置された絶縁層にカバー層が積層配置されることにより、素子基板とカバー層との間に絶縁層により囲繞されて形成された空間内に、素子基板の所定領域にくし歯電極が設けられることにより形成されたSAWフィルタ素子を備える電子部品が、カバー層が実装面に対向し、素子基板の他方の主面により形成される上面が樹脂層から露出してモジュール基板の実装面上に実装されている。したがって、SAWフィルタ素子を備える電子部品が、従来のように樹脂材料やセラミック材料で形成されたパッケージ基板上にSAWフィルタ素子が設けられた構造ではなく、圧電基板上に直接くし歯電極が設けられて形成された素子基板が切り出されたウェハレベル-チップサイズパッケージ(WL-CSP)構造に形成されているため、モジュール基板に電子部品が実装されて形成されるモジュールのさらなる低背化および小型化を図ることができる。 With this configuration, the cover layer is arranged in a laminated manner on the insulating layer disposed so as to surround a predetermined region of one main surface of the element substrate formed by the piezoelectric substrate, so that the gap between the element substrate and the cover layer is achieved. An electronic component having a SAW filter element formed by providing a comb electrode in a predetermined region of the element substrate in a space formed by being surrounded by an insulating layer is provided with a cover layer facing the mounting surface. The upper surface formed by the other main surface of the substrate is exposed from the resin layer and mounted on the mounting surface of the module substrate. Therefore, an electronic component having a SAW filter element is not a structure in which a SAW filter element is provided on a package substrate formed of a resin material or a ceramic material as in the prior art, but a comb-tooth electrode is provided directly on a piezoelectric substrate. Since the device substrate formed in this way is formed into a wafer level-chip size package (WL-CSP) structure that is cut out, the module formed by mounting electronic components on the module substrate is further reduced in height and size Can be achieved.

 なお、モジュール基板の実装面上に電子部品が実装された状態で、実装面と、電子部品のカバー層との間にも樹脂を充填して樹脂層を形成することによって、実装面とカバー層との間に充填された樹脂により電子部品の実装強度を向上できると共に、電子部品のカバー層の強度を向上することができる。 In addition, the electronic component is mounted on the mounting surface of the module substrate, and the mounting surface and the cover layer are formed by filling the resin between the mounting surface and the cover layer of the electronic component to form a resin layer. In addition to improving the mounting strength of the electronic component, the strength of the cover layer of the electronic component can be improved.

 また、素子基板(圧電素子)の他方の主面に金属膜が設けられることで、素子基板の一方の主面の所定領域に設けられたくし歯電極に電力が印加されることにより発生した熱が、金属膜を介して効率よく放熱されるので、発生した熱によりSAWフィルタ素子が損傷したり、SAWフィルタ素子の特性が変動したり劣化したりするのを防止することができる。したがって、モジュールの放熱性が改善されることにより、電子部品の耐電力性を向上することができる。 In addition, since the metal film is provided on the other main surface of the element substrate (piezoelectric element), heat generated by applying electric power to the comb electrodes provided in a predetermined region of the one main surface of the element substrate is generated. Since the heat is efficiently dissipated through the metal film, it is possible to prevent the generated heat from damaging the SAW filter element or changing or deteriorating the characteristics of the SAW filter element. Therefore, the power dissipation of the electronic component can be improved by improving the heat dissipation of the module.

 本発明によれば、モジュール基板の実装面上に実装された電子部品および電子部品の側面を被覆するように実装面上に設けられた樹脂層それぞれの上面により同一面が形成されるので、樹脂層の厚みが電子部品の厚みに抑制されているのにも関わらず、電子部品および樹脂層それぞれの上面により形成される同一面を吸着保持等して搬送装置によりモジュールを搬送することができ、ハンドリング性を損なわずにモジュールを低背化することができる。 According to the present invention, the same surface is formed by the upper surface of each of the electronic component mounted on the mounting surface of the module substrate and the resin layer provided on the mounting surface so as to cover the side surface of the electronic component. Although the thickness of the layer is suppressed to the thickness of the electronic component, the module can be transported by the transport device by sucking and holding the same surface formed by the upper surfaces of the electronic component and the resin layer, The module can be reduced in height without impairing handling properties.

本発明のジュールの第1実施形態を示す図である。It is a figure which shows 1st Embodiment of the joule of this invention. 図1のモジュールの電気的構成を示すブロック図である。It is a block diagram which shows the electric constitution of the module of FIG. 本発明のモジュールの第2実施形態を示す図である。It is a figure which shows 2nd Embodiment of the module of this invention. 本発明のモジュールの第3実施形態を示す図である。It is a figure which shows 3rd Embodiment of the module of this invention. 従来のモジュールを示す図である。It is a figure which shows the conventional module.

 <第1実施形態>
 本発明の電子部品を備えるモジュールの第1実施形態について、図1および図2を参照して説明する。図1は本発明の電子部品を備えるモジュールの第1実施形態を示す図である。図2は図1のモジュールの電気的構成を示すブロック図である。なお、図1および図2では、本発明にかかる主要な構成のみ図示されており、その他の構成は図示省略されている。また、後で説明する第2および第3実施形態を示す図3および図4についても、図1と同様に図示されているため、以下ではその説明は省略する。
<First Embodiment>
1st Embodiment of the module provided with the electronic component of this invention is described with reference to FIG. 1 and FIG. FIG. 1 is a diagram showing a first embodiment of a module including the electronic component of the present invention. FIG. 2 is a block diagram showing an electrical configuration of the module of FIG. In FIGS. 1 and 2, only main components according to the present invention are shown, and other components are not shown. 3 and 4 showing the second and third embodiments described later are also illustrated in the same manner as in FIG. 1, and thus the description thereof is omitted below.

 (モジュール)
 図1および図2に示すモジュール1は、携帯電話や携帯情報端末などの通信携帯端末が備えるマザー基板に搭載されるものであり、この実施形態では、送信フィルタ素子14および受信フィルタ素子15を有する分波器10(デュプレクサ:本発明の「電子部品」に相当)と、モジュール基板2と、整合回路3と、グランド電極4と、スイッチICやフィルタ、抵抗、コンデンサ、コイルなどの各種の電子部品(図示省略)と、樹脂層7と、金属膜8とを備え、高周波アンテナスイッチモジュールとして形成されている。
(module)
A module 1 shown in FIGS. 1 and 2 is mounted on a mother board provided in a communication portable terminal such as a mobile phone or a portable information terminal. In this embodiment, the module 1 includes a transmission filter element 14 and a reception filter element 15. A duplexer 10 (duplexer: equivalent to the “electronic component” of the present invention), a module substrate 2, a matching circuit 3, a ground electrode 4, and various electronic components such as a switch IC, a filter, a resistor, a capacitor, and a coil. (Not shown), a resin layer 7 and a metal film 8 are provided and formed as a high-frequency antenna switch module.

 また、分波器10およびチップコイル3aなどの電子部品は、モジュール基板2の実装面2a上に設けられた電極2bに実装されて、モジュール基板2に設けられた配線パターン5(本発明の「配線電極」に相当)を介してモジュール基板2の裏面に形成された複数の実装用電極6に電気的に接続される。そして、モジュール1がマザー基板に実装されることにより、マザー基板が備えるアンテナラインANTやグランドラインGND、送信信号ラインTx、受信信号ラインRxなどの各種信号ラインおよび電源ラインとモジュール1とが接続されて、マザー基板とモジュール1との間で送受信信号の入出力が行われる。 Further, electronic components such as the duplexer 10 and the chip coil 3a are mounted on the electrode 2b provided on the mounting surface 2a of the module substrate 2, and the wiring pattern 5 provided on the module substrate 2 (“ Electrically connected to a plurality of mounting electrodes 6 formed on the back surface of the module substrate 2 via the wiring electrodes ”. When the module 1 is mounted on the mother board, the module 1 is connected to various signal lines and power lines such as the antenna line ANT, the ground line GND, the transmission signal line Tx, and the reception signal line Rx provided in the mother board. Thus, transmission / reception signals are input / output between the mother board and the module 1.

 モジュール基板2は、この実施形態では、セラミックグリーンシートにより形成された複数の誘電体層が積層されて焼成されることで一体的にセラミック積層体として形成される。すなわち、各誘電体層を形成するセラミックグリーンシートは、アルミナおよびガラスなどの混合粉末が有機バインダおよび溶剤などと一緒に混合されたスラリーが成型器によりシート化されたものであり、約1000℃前後の低い温度で、所謂、低温焼成できるように形成されている。そして、所定形状に切り取られたセラミックグリーンシートに、レーザー加工などによりビアホールが形成され、形成されたビアホールにAgやCuなどを含む導体ペーストが充填されたり、ビアフィルめっきが施されることにより層間接続用のビア導体が形成され、導体ペーストによる印刷により種々の電極パターンが形成されて、各誘電体層が形成される。 In this embodiment, the module substrate 2 is integrally formed as a ceramic laminate by laminating and firing a plurality of dielectric layers formed of ceramic green sheets. That is, the ceramic green sheet forming each dielectric layer is a sheet in which a slurry in which a mixed powder such as alumina and glass is mixed with an organic binder and a solvent is formed into a sheet by a molding machine. So that it can be fired at a low temperature. Then, via holes are formed on the ceramic green sheet cut into a predetermined shape by laser processing, etc., and the formed via holes are filled with a conductive paste containing Ag, Cu, etc. Via conductors are formed, various electrode patterns are formed by printing with a conductive paste, and each dielectric layer is formed.

 また、各誘電体層に、ビア導体および電極パターンが適宜形成されることで、モジュール基板2に、モジュール基板2に実装された分波器10とチップコイル3aなどの電子部品とを接続する配線パターン5や、グランド電極4、実装用電極6などが形成される。すなわち、電極パターンおよびビア導体が各誘電体層に適宜設けられて、グランド電極4や配線パターン5、実装用電極6などが形成されることで、モジュール基板2に実装される分波器10およびチップコイル3aなどの電子部品と、実装用電極6とが相互に電気的に接続される。このとき、各誘電体層に形成される電極パターンおよびビア導体によりコンデンサやコイルなどの回路素子を形成したり、形成されたコンデンサやコイルなどの回路素子によりフィルタ回路や整合回路3などを形成してもよい。 Also, via conductors and electrode patterns are appropriately formed in each dielectric layer, so that wiring for connecting the duplexer 10 mounted on the module substrate 2 and electronic components such as the chip coil 3a to the module substrate 2 A pattern 5, a ground electrode 4, a mounting electrode 6 and the like are formed. That is, the electrode pattern and the via conductor are appropriately provided in each dielectric layer to form the ground electrode 4, the wiring pattern 5, the mounting electrode 6, and the like, so that the duplexer 10 mounted on the module substrate 2 and Electronic components such as the chip coil 3a and the mounting electrode 6 are electrically connected to each other. At this time, a circuit element such as a capacitor or a coil is formed by the electrode pattern and via conductor formed in each dielectric layer, or a filter circuit or a matching circuit 3 is formed by the formed circuit element such as a capacitor or coil. May be.

 整合回路3は、この実施形態では、モジュール基板2の実装面2aに実装されたチップ部品であるチップコイル3aにより形成されており、送信フィルタ素子14の出力側および受信フィルタ素子15の入力側に分波器10の共通端子17cを介して接続される。 In this embodiment, the matching circuit 3 is formed by a chip coil 3a which is a chip component mounted on the mounting surface 2a of the module substrate 2, and is provided on the output side of the transmission filter element 14 and the input side of the reception filter element 15. It is connected via the common terminal 17 c of the duplexer 10.

 グランド電極4は、分波器10の下方に配置されてモジュール基板2の実装面2aに設けられ、グランドラインGNDと電気的に接続される。なお、グランド電極4は、図示しないはんだボールなどの接続電極により、分波器10のグランド用端子電極と接続される。 The ground electrode 4 is disposed below the duplexer 10, provided on the mounting surface 2 a of the module substrate 2, and electrically connected to the ground line GND. The ground electrode 4 is connected to the ground terminal electrode of the duplexer 10 by a connection electrode such as a solder ball (not shown).

 樹脂層7は、分波器10の側面を被覆するように実装面2a上に設けられており、分波器10および樹脂層7それぞれの上面により同一面が形成される。なお、この実施形態では、モジュール基板2の実装面2a上に実装された電子部品のうちで、分波器10の実装面2aからの高さが最も高く、他の電子部品は、実装面2aからの高さが分波器10の高さよりも低いものが実装面2a上に実装されている。 The resin layer 7 is provided on the mounting surface 2 a so as to cover the side surface of the duplexer 10, and the same surface is formed by the upper surfaces of the duplexer 10 and the resin layer 7. In this embodiment, among the electronic components mounted on the mounting surface 2a of the module substrate 2, the height from the mounting surface 2a of the duplexer 10 is the highest, and the other electronic components are mounted on the mounting surface 2a. A device whose height is lower than the height of the duplexer 10 is mounted on the mounting surface 2a.

 金属膜8は、分波器10および樹脂層7それぞれの上面に、スクリーン印刷や蒸着、スパッタ等の手法によりAu(金)、Ag(銀)、Cu(銅)等の金属により形成されている。 The metal film 8 is formed of a metal such as Au (gold), Ag (silver), or Cu (copper) on the top surfaces of the duplexer 10 and the resin layer 7 by a method such as screen printing, vapor deposition, or sputtering. .

 (分波器)
 分波器10は、ウェハレベル-チップサイズパッケージ(WL-CSP)構造を有し、素子基板11と、絶縁層12と、カバー層13と、高周波信号の通過帯域が異なる送信フィルタ素子14および受信フィルタ素子15とを備えている。
(Demultiplexer)
The duplexer 10 has a wafer level-chip size package (WL-CSP) structure, an element substrate 11, an insulating layer 12, a cover layer 13, and a transmission filter element 14 and a reception that have different high-frequency signal pass bands. And a filter element 15.

 素子基板11は、この実施形態では、ニオブ酸リチウム、タンタル酸リチウム、水晶などの圧電体により形成されている。また、素子基板11の一方の主面11aの所定領域に、AlやCuなどにより形成されたくし歯電極14a,15a(IDT電極)が設けられてSAW(弾性表面波)フィルタ素子が構成されており、くし歯電極14a,15aにより構成されたSAWフィルタ素子により、それぞれ、送信フィルタ素子14および受信フィルタ素子15が形成されている。 In this embodiment, the element substrate 11 is formed of a piezoelectric body such as lithium niobate, lithium tantalate, or quartz. Further, comb electrodes 14a and 15a (IDT electrodes) formed of Al, Cu, or the like are provided in a predetermined region of one main surface 11a of the element substrate 11 to constitute a SAW (surface acoustic wave) filter element. The transmission filter element 14 and the reception filter element 15 are formed by the SAW filter elements constituted by the comb electrodes 14a and 15a, respectively.

 また、分波器10には、送信フィルタ素子14の入力側に接続される送信端子17aと、受信フィルタ素子15の出力側に接続される受信端子17bと、送信フィルタ素子14の出力側および受信フィルタ素子15の入力側に接続される共通端子17c(アンテナ端子)と、接地端子17dとが設けられている。また、この実施形態では、受信フィルタ素子15は、平衡出力型の受信フィルタを有している。 Further, the duplexer 10 includes a transmission terminal 17 a connected to the input side of the transmission filter element 14, a reception terminal 17 b connected to the output side of the reception filter element 15, and the output side and reception of the transmission filter element 14. A common terminal 17c (antenna terminal) connected to the input side of the filter element 15 and a ground terminal 17d are provided. In this embodiment, the reception filter element 15 has a balanced output type reception filter.

 また、素子基板11の一方の主面11aには、送信フィルタ素子14を形成するくし歯電極14aに接続される端子電極14bと、受信フィルタ素子15を形成するくし歯電極15aに接続される端子電極15bとがそれぞれ設けられている。 Further, on one main surface 11a of the element substrate 11, a terminal electrode 14b connected to the comb electrode 14a forming the transmission filter element 14 and a terminal connected to the comb electrode 15a forming the reception filter element 15 are provided. An electrode 15b is provided.

 絶縁層12は、素子基板11の一方の主面11aのくし歯電極14a,15aが設けられた所定領域を囲繞して配置される。また、絶縁層12は、くし歯電極14a,15aおよび端子電極14b,15bが設けられた素子基板11の一方の主面11aに、感光性のエポキシ系樹脂やポリイミド系樹脂により樹脂層を形成した後に、フォトリソグラフィの工程を経て、くし歯電極14a,15aが設けられた所定領域および端子電極14b,15bの領域の樹脂層を取り除くことにより形成される。 The insulating layer 12 is disposed so as to surround a predetermined region in which the comb electrodes 14a and 15a on one main surface 11a of the element substrate 11 are provided. The insulating layer 12 is formed by forming a resin layer on one main surface 11a of the element substrate 11 provided with the comb electrodes 14a and 15a and the terminal electrodes 14b and 15b by using a photosensitive epoxy resin or polyimide resin. Later, through a photolithography process, the resin layer is removed from the predetermined region where the comb electrodes 14a and 15a are provided and the region of the terminal electrodes 14b and 15b.

 カバー層13は、絶縁層12に積層配置されて素子基板11との間に絶縁層12により囲繞された空間を形成し、当該形成された空間内に、くし歯電極14a,15a(送信フィルタ素子14および受信フィルタ素子15)が配置される。また、カバー層13は、例えば、絶縁層12に感光性のエポキシ系樹脂やポリイミド系樹脂によりフォトリソグラフィの工程を経て積層された樹脂層の接続孔に、CuやAlのペーストを充填したりビアフィルめっきを施したりして端子電極14b,15bに接続される電極14c、15cを形成することで形成される。そして、接続端子14b,15bに接続されて、カバー層13から露出する電極14c,15cに、実装用のはんだボール14d、15dが形成されて分波器10が形成される。 The cover layer 13 is laminated on the insulating layer 12 to form a space surrounded by the insulating layer 12 between the cover layer 13 and the element substrate 11, and the comb electrodes 14a and 15a (transmission filter elements) are formed in the formed space. 14 and the reception filter element 15) are arranged. The cover layer 13 may be formed by, for example, filling a connection hole of a resin layer that is laminated on the insulating layer 12 with a photosensitive epoxy resin or polyimide resin through a photolithography process with a paste of Cu or Al or via-filling. For example, the electrodes 14c and 15c connected to the terminal electrodes 14b and 15b are formed by plating. The duplexer 10 is formed by forming mounting solder balls 14d and 15d on the electrodes 14c and 15c that are connected to the connection terminals 14b and 15b and exposed from the cover layer 13, respectively.

 なお、この実施形態では、分波器10が備える送信フィルタ素子14および受信フィルタ素子15はSAWフィルタ素子により形成されているが、素子基板11を、例えばSi基板により形成することにより、送信フィルタ素子14および受信フィルタ素子15をBAWフィルタ素子により形成してもよい。また、分波器10は、カバー層13がモジュール基板2の実装面2aに対向し、素子基板11の他方の主面により形成される上面が樹脂層7から露出して実装面2aに実装されている。 In this embodiment, the transmission filter element 14 and the reception filter element 15 included in the duplexer 10 are formed by SAW filter elements. However, by forming the element substrate 11 from, for example, a Si substrate, the transmission filter element is formed. 14 and the reception filter element 15 may be formed of BAW filter elements. In the duplexer 10, the cover layer 13 faces the mounting surface 2 a of the module substrate 2, and the upper surface formed by the other main surface of the element substrate 11 is exposed from the resin layer 7 and mounted on the mounting surface 2 a. ing.

 (製造方法)
 次に、図1のモジュール1の製造方法の一例についてその概略を説明する。
(Production method)
Next, an outline of an example of a method for manufacturing the module 1 of FIG. 1 will be described.

 まず、所定形状に形成されたセラミックグリーンシートに、レーザーなどでビアホールを形成し、内部に導体ペーストを充填したり、ビアフィルめっきを施すことにより層間接続用のビア導体(配線パターン5)が形成され、実装面2aの実装用の電極2a、グランド電極4、ランド状の配線パターン5および実装用電極6などの電極パターンが導体ペーストにより印刷されて、モジュール基板2を構成する各誘電体層を形成するためのセラミックグリーンシートが準備される。なお、それぞれのセラミックグリーンシートには、一度に大量のモジュール基板2を形成できるように、ビア導体や電極パターンが複数設けられている。 First, via holes are formed on a ceramic green sheet formed in a predetermined shape with a laser or the like, and a conductor paste is filled inside or via fill plating is performed to form a via conductor (wiring pattern 5) for interlayer connection. Electrode patterns such as the mounting electrode 2a, the ground electrode 4, the land-like wiring pattern 5 and the mounting electrode 6 on the mounting surface 2a are printed with a conductive paste to form each dielectric layer constituting the module substrate 2. A ceramic green sheet is prepared. Each ceramic green sheet is provided with a plurality of via conductors and electrode patterns so that a large number of module substrates 2 can be formed at a time.

 次に、各誘電体層が積層されて積層体が形成される。そして、焼成後に個々のモジュール基板2に分割するための溝が、各モジュール基板2の領域を囲むように形成される。続いて、積層体が低温焼成されることによりモジュール基板2の集合体が形成される。 Next, each dielectric layer is laminated to form a laminate. And the groove | channel for dividing | segmenting into each module board | substrate 2 after baking is formed so that the area | region of each module board | substrate 2 may be enclosed. Subsequently, the assembly of the module substrates 2 is formed by firing the laminate at a low temperature.

 続いて、個々のモジュール基板2に分割される前に、モジュール基板2の集合体の実装面2aに、分波器10およびチップコイル3aなどの種々の電子部品が実装される。次に、モジュール基板2の集合体の実装面2aに、分波器10の側面を被覆するように樹脂が充填されて、これが加熱硬化されることにより樹脂層7が各モジュール基板2に設けられてモジュール1の集合体が形成される。 Subsequently, before being divided into individual module substrates 2, various electronic components such as the duplexer 10 and the chip coil 3 a are mounted on the mounting surface 2 a of the assembly of the module substrates 2. Next, the mounting surface 2 a of the assembly of the module substrates 2 is filled with resin so as to cover the side surfaces of the duplexer 10, and the resin layer 7 is provided on each module substrate 2 by heat curing. Thus, an assembly of modules 1 is formed.

 続いて、分波器10および樹脂層7それぞれの上面が同一面を形成するように樹脂層7および分波器10の素子基板11が研削または研磨される。そして、分波器10および樹脂層7それぞれの上面により形成される面に金属膜8が形成された後、モジュール1の集合体が個々に分割されて、モジュール1が完成する。 Subsequently, the resin layer 7 and the element substrate 11 of the duplexer 10 are ground or polished so that the respective top surfaces of the duplexer 10 and the resin layer 7 form the same surface. Then, after the metal film 8 is formed on the surfaces formed by the top surfaces of the duplexer 10 and the resin layer 7, the assembly of the modules 1 is divided individually, and the module 1 is completed.

 このように形成されたモジュール1では、マザー基板の送信信号ラインTxから、実装用電極6および配線パターン5を介して分波器10の送信端子17aに出力された送信信号は、送信フィルタ素子14に入力されて所定のフィルタ処理が施されて、共通端子17cからモジュール基板2側に出力され、配線パターン5(整合回路3)および実装用電極6を介してマザー基板のアンテナラインANTに出力される。また、マザー基板のアンテナラインANTから、実装用電極6および配線パターン5(整合回路3)を介して分波器10の共通端子17cに入力された受信信号は、受信フィルタ素子15に入力されて所定のフィルタ処理が施されて、受信端子17bからモジュール基板2側に出力され、配線パターン5および実装用電極6を介してマザー基板の受信信号ラインRxに出力される。 In the module 1 thus formed, the transmission signal output from the transmission signal line Tx of the mother board to the transmission terminal 17a of the duplexer 10 via the mounting electrode 6 and the wiring pattern 5 is transmitted to the transmission filter element 14. To the module board 2 side from the common terminal 17c, and output to the antenna line ANT of the mother board via the wiring pattern 5 (matching circuit 3) and the mounting electrode 6. The A reception signal input from the antenna line ANT of the mother board to the common terminal 17c of the duplexer 10 via the mounting electrode 6 and the wiring pattern 5 (matching circuit 3) is input to the reception filter element 15. Predetermined filtering is performed, the signal is output from the reception terminal 17 b to the module substrate 2, and is output to the reception signal line Rx of the mother substrate via the wiring pattern 5 and the mounting electrode 6.

 なお、配線パターン5が設けられたモジュール基板2や、WL-CSP構造を有する分波器10を備えるモジュール1は、上記した製造方法に限らず、周知の一般的な製造方法により形成すればよく、モジュール基板2は、樹脂やセラミック、ポリマー材料などを用いた、プリント基板、LTCC、アルミナ系基板、ガラス基板、複合材料基板、単層基板、多層基板などで形成することができ、モジュール1の使用目的に応じて、適宜最適な材質を選択してモジュール基板2を形成すればよい。 The module substrate 2 provided with the wiring pattern 5 and the module 1 including the duplexer 10 having the WL-CSP structure are not limited to the above-described manufacturing method, and may be formed by a known general manufacturing method. The module substrate 2 can be formed of a printed circuit board, LTCC, alumina substrate, glass substrate, composite material substrate, single layer substrate, multilayer substrate, etc. using resin, ceramic, polymer material, etc. What is necessary is just to form the module board | substrate 2 by selecting an optimal material suitably according to a use purpose.

 以上のように、この実施形態では、モジュール基板2の実装面2a上に実装された分波器10および分波器10の側面を被覆するように実装面2a上に設けられた樹脂層7それぞれの上面により同一面が形成される。したがって、樹脂層7の厚みが分波器10の厚みに抑制されているのにも関わらず、分波器10および樹脂層7それぞれの上面により形成される同一面を吸着保持等して吸着機構を有する搬送装置(図示省略)によりモジュール1を搬送することができるので、ハンドリング性を損なわずにモジュール1を低背化することができる。 As described above, in this embodiment, each of the duplexer 10 mounted on the mounting surface 2a of the module substrate 2 and the resin layer 7 provided on the mounting surface 2a so as to cover the side surface of the duplexer 10 are provided. The same surface is formed by the upper surface of each. Therefore, although the thickness of the resin layer 7 is suppressed to the thickness of the duplexer 10, the same surface formed by the upper surfaces of the duplexer 10 and the resin layer 7 is held by suction, etc. Since the module 1 can be transported by a transport device (not shown) having the above, the module 1 can be reduced in height without impairing handling properties.

 また、モジュール基板2の実装面2a上に設けられた分波器10および樹脂層7の上面に形成された金属膜8がヒートシンクとして機能するので、スクリーン印刷や蒸着、スパッタ等の手法により分波器10および樹脂層7の上面に金属膜8を薄く形成することにより、モジュール1の厚みが増大するのを抑制しつつモジュール1の放熱性を改善することができる。 Further, since the duplexer 10 provided on the mounting surface 2a of the module substrate 2 and the metal film 8 formed on the upper surface of the resin layer 7 function as a heat sink, the demultiplexing is performed by a method such as screen printing, vapor deposition, or sputtering. By thinly forming the metal film 8 on the upper surfaces of the container 10 and the resin layer 7, it is possible to improve the heat dissipation of the module 1 while suppressing an increase in the thickness of the module 1.

 また、圧電基板により形成された素子基板11の一方の主面11aの所定領域を囲繞して配置された絶縁層12にカバー層13が積層配置されることにより、素子基板11とカバー層13との間に絶縁層12により囲繞されて形成された空間内に、素子基板11の所定領域にくし歯電極14a,15aが設けられることにより形成されたSAWフィルタ素子を備える分波器10が、カバー層13が実装面2aに対向し、素子基板11の他方の主面により形成される上面が樹脂層7から露出してモジュール基板2の実装面2a上に実装されている。 Further, the cover layer 13 is laminated and disposed on the insulating layer 12 disposed so as to surround a predetermined region of the one main surface 11a of the element substrate 11 formed of the piezoelectric substrate, whereby the element substrate 11, the cover layer 13, A duplexer 10 having a SAW filter element formed by providing comb electrodes 14a and 15a in a predetermined region of the element substrate 11 in a space formed by being surrounded by an insulating layer 12 between The layer 13 faces the mounting surface 2 a, and the upper surface formed by the other main surface of the element substrate 11 is exposed from the resin layer 7 and mounted on the mounting surface 2 a of the module substrate 2.

 したがって、SAWフィルタ素子を備える分波器10が、従来のように樹脂材料やセラミック材料で形成されたパッケージ基板上にSAWフィルタ素子が設けられた構造ではなく、圧電基板上に直接くし歯電極14a,15aが設けられて形成された素子基板11が切り出されたウェハレベル-チップサイズパッケージ(WL-CSP)構造に形成されているため、モジュール基板2に分波器10が実装されて形成されるモジュール1のさらなる低背化および小型化を図ることができる。 Therefore, the duplexer 10 including the SAW filter element is not a structure in which the SAW filter element is provided on the package substrate formed of a resin material or a ceramic material as in the conventional case, but the comb-tooth electrode 14a directly on the piezoelectric substrate. , 15a is formed in a wafer level-chip size package (WL-CSP) structure in which the element substrate 11 is cut out, and thus the duplexer 10 is mounted on the module substrate 2 and formed. The module 1 can be further reduced in height and size.

 なお、モジュール基板2の実装面2a上に分波器10が実装された状態で、実装面2aと、分波器10のカバー層13との間にも樹脂が充填されて樹脂層7が形成されているので、実装面2aとカバー層13との間に充填された樹脂により分波器10の実装強度を向上できると共に、分波器10のカバー層13の強度を向上することがきる。 In addition, in a state where the duplexer 10 is mounted on the mounting surface 2a of the module substrate 2, the resin layer 7 is also formed by filling the resin between the mounting surface 2a and the cover layer 13 of the duplexer 10. Therefore, the mounting strength of the duplexer 10 can be improved by the resin filled between the mounting surface 2a and the cover layer 13, and the strength of the cover layer 13 of the duplexer 10 can be improved.

 また、圧電素子により形成された素子基板11の他方の主面に金属膜8が設けられることで、素子基板11の一方の主面11aの所定領域に設けられたくし歯電極14a,15aに電力が印加されることにより発生した熱が、金属膜8を介して効率よく放熱されるので、発生した熱によりSAWフィルタ素子が損傷したり、SAWフィルタ素子の特性が変動したり劣化したりするのを防止することができる。したがって、モジュール1の放熱性が改善されることにより、分波器10の耐電力性を向上することができる。 In addition, since the metal film 8 is provided on the other main surface of the element substrate 11 formed of the piezoelectric element, power is supplied to the comb electrodes 14a and 15a provided in a predetermined region of the one main surface 11a of the element substrate 11. Since the heat generated by the application is efficiently dissipated through the metal film 8, the generated heat may damage the SAW filter element, or the characteristics of the SAW filter element may fluctuate or deteriorate. Can be prevented. Therefore, the heat resistance of the duplexer 10 can be improved by improving the heat dissipation of the module 1.

 また、樹脂層7および分波器10の素子基板11が研削されて、分波器10および樹脂層7それぞれの上面により同一面が形成された場合には、搬送装置の吸着機構による吸着を阻害しない程度に微小な凹凸がモジュール1の上面に形成される。したがって、微小な凹凸を有するモジュール1の上面に金属膜8が形成されることにより、金属膜8の上面に微小な凹凸が形成されるので、ヒートシンクとして機能する金属膜8による放熱効率を向上することができる。 Further, when the resin layer 7 and the element substrate 11 of the duplexer 10 are ground and the same surface is formed by the upper surfaces of the duplexer 10 and the resin layer 7, the adsorption by the adsorption mechanism of the transport device is obstructed. A minute unevenness is formed on the upper surface of the module 1 to such an extent that it does not occur. Accordingly, since the metal film 8 is formed on the upper surface of the module 1 having minute irregularities, the minute irregularities are formed on the upper surface of the metal film 8, so that the heat dissipation efficiency by the metal film 8 functioning as a heat sink is improved. be able to.

 なお、この実施形態では、送信フィルタ素子14および受信フィルタ素子15に接続される整合回路3を形成するために、チップコイル3aがモジュール基板2の実装面2aに実装されているが、送信フィルタ素子14または受信フィルタ素子15に接続される回路の構成に応じて、チップコイル3aと一緒に、または、チップコイル3aに換えて、チップ抵抗やチップコンデンサなどのチップ部品を実装面2aに実装してもよい。 In this embodiment, the chip coil 3a is mounted on the mounting surface 2a of the module substrate 2 in order to form the matching circuit 3 connected to the transmission filter element 14 and the reception filter element 15, but the transmission filter element 14 or a chip component such as a chip capacitor is mounted on the mounting surface 2a together with the chip coil 3a or in place of the chip coil 3a according to the configuration of the circuit connected to the reception filter element 15 or 14. Also good.

 <第2実施形態>
 次に、図3を参照して本発明の第2実施形態について説明する。図3は本発明のモジュールの第2実施形態を示す図である。
Second Embodiment
Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 3 is a diagram showing a second embodiment of the module of the present invention.

 この実施形態が上記した第1実施形態と異なるのは、図3に示すように、樹脂層7の分波器10の周辺に該分波器10の側面にその対向する一主面が接触配置された導体壁8a(本発明の「導電体」に相当)が金属膜8に接続されて設けられている点である。また、分波器10の上面(素子基板11の他方の主面)を被覆して設けられた金属膜8と、モジュール基板2に設けられた配線パターン5のうち、グランドラインGNDに接続されている配線パターン5とが、導体壁8aにより電気的に接続されている。また、この実施形態では、樹脂層7の側面も金属膜8により被覆されている。その他の構成は上記した第1実施形態と同様の構成であるため、同一符号を付すことによりその構成の説明は省略する。 This embodiment is different from the first embodiment described above in that, as shown in FIG. 3, one main surface facing the side surface of the duplexer 10 is in contact with the periphery of the duplexer 10 of the resin layer 7. The conductive wall 8 a (corresponding to the “conductor” of the present invention) is provided connected to the metal film 8. Of the metal film 8 provided so as to cover the upper surface of the duplexer 10 (the other main surface of the element substrate 11) and the wiring pattern 5 provided on the module substrate 2, it is connected to the ground line GND. The wiring pattern 5 is electrically connected by the conductor wall 8a. In this embodiment, the side surface of the resin layer 7 is also covered with the metal film 8. Since other configurations are the same as those in the first embodiment, description of the configuration is omitted by giving the same reference numerals.

 このように構成すると、上記した第1実施形態と同様の効果を奏することができると共に、以下の効果を奏することができる。すなわち、分波器10で発生した熱が、樹脂層7の分波器10の周辺に設けられた導体壁8aを介して樹脂層7の上面の金属膜8から放熱されるので、モジュール1の放熱性をさらに改善することができる。 With this configuration, the same effects as those of the first embodiment described above can be achieved, and the following effects can be achieved. That is, since the heat generated in the duplexer 10 is radiated from the metal film 8 on the upper surface of the resin layer 7 through the conductor wall 8a provided around the duplexer 10 of the resin layer 7, The heat dissipation can be further improved.

 また、分波器10の上面を被覆して設けられた金属膜8が、樹脂層7に設けられた導体壁8aを介してモジュール基板2に形成された配線パターン5と電気的に接続されることにより接地されてシールド電極として機能するので、モジュール1のシールド性を向上させることができる。また、モジュール基板2の配線パターン5と電気的に接続されて接地された導体壁8aが分波器10の周辺に設けられているので、モジュール基板2の実装面2a上に実装されている他の電子部品(チップコイル3a等)と分波器10との間の電気的な干渉を抑制することができる。 Further, the metal film 8 provided so as to cover the upper surface of the duplexer 10 is electrically connected to the wiring pattern 5 formed on the module substrate 2 via the conductor wall 8 a provided on the resin layer 7. As a result, it is grounded and functions as a shield electrode, so that the shielding property of the module 1 can be improved. In addition, since the conductor wall 8a that is electrically connected to the wiring pattern 5 of the module substrate 2 and is grounded is provided around the duplexer 10, the conductor wall 8a is mounted on the mounting surface 2a of the module substrate 2. The electrical interference between the electronic component (chip coil 3a and the like) and the duplexer 10 can be suppressed.

 また、樹脂層7の側面も金属膜8で被覆されているので、モジュール1の放熱効率をさらに改善することができる。 Further, since the side surface of the resin layer 7 is also covered with the metal film 8, the heat dissipation efficiency of the module 1 can be further improved.

 なお、この実施形態では、熱伝導率の向上を図るために、導体壁8aは分波器10の側面に接触配置されているが、導体壁8aと分波器10との間に間隙が設けられた状態で導体壁8aが樹脂層7の分波器10の周辺に配置されていてもよい。 In this embodiment, the conductor wall 8a is disposed in contact with the side surface of the duplexer 10 in order to improve the thermal conductivity. However, a gap is provided between the conductor wall 8a and the duplexer 10. In this state, the conductor wall 8 a may be disposed around the duplexer 10 of the resin layer 7.

 <第3実施形態>
 次に、図4を参照して本発明の第2実施形態について説明する。図4は本発明のモジュールの第3実施形態を示す図である。
<Third Embodiment>
Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 4 is a diagram showing a third embodiment of the module of the present invention.

 この実施形態が上記した第2実施形態と異なるのは、図4に示すように、樹脂層7の分波器10の周辺に金属膜8に接続されたビア導体8b(本発明の「導電体」に相当)が設けられている点である。また、分波器10の上面(素子基板11の他方の主面)を被覆して設けられた金属膜8と、モジュール基板2に設けられた配線パターン5のうち、グランドラインGNDに接続されている配線パターン5とが、ビア導体8bにより電気的に接続されている。その他の構成は上記した第1実施形態と同様の構成であるため、同一符号を付すことによりその構成の説明は省略する。 As shown in FIG. 4, this embodiment is different from the second embodiment described above in that a via conductor 8b connected to the metal film 8 around the duplexer 10 of the resin layer 7 (the “conductor” of the present invention). Is equivalent). Of the metal film 8 provided so as to cover the upper surface of the duplexer 10 (the other main surface of the element substrate 11) and the wiring pattern 5 provided on the module substrate 2, it is connected to the ground line GND. The wiring pattern 5 is electrically connected by the via conductor 8b. Since other configurations are the same as those in the first embodiment, description of the configuration is omitted by giving the same reference numerals.

 このように構成すると、上記した第2実施形態と同様の効果を奏することができる。 With this configuration, the same effects as those of the second embodiment described above can be achieved.

 なお、本発明は上記した実施形態に限定されるものではなく、その趣旨を逸脱しない限りにおいて、上記したもの以外に種々の変更を行なうことが可能であり、上記した実施形態が備える構成をどのように組み合わせてもよい。例えば、上記した実施形態では、本発明の電子部品の一例として分波器10を例に挙げて説明したが、電子部品としては、BAWフィルタ、パワーアンプ、スイッチIC等の半導体素子など、どのようなものであってもよい。また、金属膜8は、モジュール1の上面の少なくとも一部に設けられていればよい。 It should be noted that the present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. You may combine. For example, in the above-described embodiment, the duplexer 10 is described as an example of the electronic component of the present invention. However, the electronic component may be a semiconductor element such as a BAW filter, a power amplifier, or a switch IC. It may be anything. The metal film 8 only needs to be provided on at least a part of the upper surface of the module 1.

 また、上記した実施形態では、モジュール基板に1個の分波器が搭載されたモジュールを例に挙げて説明したが、モジュール基板に2個以上の分波器を搭載してモジュールを形成してもよく、この場合、モジュール基板にスイッチICを搭載して、モジュール基板に搭載された複数の分波器から、使用する分波器をスイッチICにより選択して切換えるようにするとよい。 In the above-described embodiment, the module in which one duplexer is mounted on the module substrate has been described as an example. However, a module is formed by mounting two or more duplexers on the module substrate. In this case, a switch IC may be mounted on the module substrate, and a duplexer to be used may be selected and switched by the switch IC from a plurality of duplexers mounted on the module substrate.

 また、上記した実施形態では、送信フィルタ素子14および受信フィルタ素子15は同一の空間に配置されているが、素子基板11とカバー層13との間に絶縁層12により囲まれる空間を2個形成し、各空間に送信フィルタ素子14および受信フィルタ素子15をそれぞれ配置してもよい。このように構成すると、送信フィルタ素子14および受信フィルタ素子15が構造上分離して配置されることにより、例えば送信フィルタ素子14に電力が印加されることにより発生した熱が、受信フィルタ素子15の特性に影響を与えるのを抑制することができる。なお、送信フィルタ素子および受信フィルタ素子を、それぞれ個別の電子部品として構成してモジュール基板2の実装面2aに実装することにより同様の効果を奏することができる。 In the above embodiment, the transmission filter element 14 and the reception filter element 15 are arranged in the same space, but two spaces surrounded by the insulating layer 12 are formed between the element substrate 11 and the cover layer 13. The transmission filter element 14 and the reception filter element 15 may be arranged in each space. With this configuration, the transmission filter element 14 and the reception filter element 15 are separated from each other in structure, so that, for example, heat generated when power is applied to the transmission filter element 14 is generated by the reception filter element 15. The influence on the characteristics can be suppressed. The transmission filter element and the reception filter element can be configured as individual electronic components and mounted on the mounting surface 2a of the module substrate 2 to achieve the same effect.

 すなわち、上記した実施形態では、送信フィルタ素子14および受信フィルタ素子15を一体的に備えるWL-CSPとして形成された分波器10を例に挙げて説明したが、複数の素子基板、カバー層および絶縁層により分波器を形成してもよく、この場合、素子基板とカバー層との間に形成される絶縁層により囲まれた空間に送信フィルタ素子が配置されたWL-CSP構造の素子と、素子基板とカバー層との間に形成される絶縁層により囲まれた空間に受信フィルタ素子を配置したWL-CSP構造の素子とを2個用意し、これらの2個の素子をモジュール基板2に搭載することにより分波器を構成してもよい。 That is, in the above-described embodiment, the duplexer 10 formed as WL-CSP integrally including the transmission filter element 14 and the reception filter element 15 has been described as an example, but a plurality of element substrates, cover layers, and A duplexer may be formed by an insulating layer. In this case, an element having a WL-CSP structure in which a transmission filter element is disposed in a space surrounded by an insulating layer formed between the element substrate and the cover layer; Two WL-CSP elements each having a reception filter element arranged in a space surrounded by an insulating layer formed between the element substrate and the cover layer are prepared, and these two elements are connected to the module substrate 2. A duplexer may be configured by mounting on the board.

 本発明は、モジュール基板の実装面上に実装された電子部品が樹脂で封止されたモジュールに広く適用することができる。 The present invention can be widely applied to modules in which electronic components mounted on a mounting surface of a module substrate are sealed with resin.

 1  モジュール
 2  モジュール基板
 2a  実装面
 5  配線パターン(配線電極)
 7  樹脂層
 8  金属膜
 8a  導体壁(導電体)
 8b  ビア導体(導電体)
 10  分波器(電子部品)
 11  素子基板
 12  絶縁層
 13  カバー層
 14a,15a くし歯電極
1 module 2 module substrate 2a mounting surface 5 wiring pattern (wiring electrode)
7 Resin layer 8 Metal film 8a Conductor wall (conductor)
8b Via conductor (conductor)
10 Demultiplexer (electronic component)
11 Element substrate 12 Insulating layer 13 Cover layer 14a, 15a Comb electrode

Claims (8)

 モジュール基板と、
 前記モジュール基板の実装面上に実装された電子部品と、
 前記電子部品の側面を被覆するように前記実装面上に設けられた樹脂層とを備え、
 前記電子部品および前記樹脂層それぞれの上面が同一面を形成する
 ことを特徴とするモジュール。
A module board;
Electronic components mounted on the mounting surface of the module substrate;
A resin layer provided on the mounting surface so as to cover the side surface of the electronic component;
The module in which the upper surfaces of the electronic component and the resin layer form the same surface.
 前記電子部品および前記樹脂層の上面の少なくとも一部に金属膜が形成されていることを特徴とする請求項1に記載のモジュール。 The module according to claim 1, wherein a metal film is formed on at least a part of the upper surfaces of the electronic component and the resin layer.  前記樹脂層の前記電子部品の周辺に該電子部品の側面にその一主面が対向するように配置された導体壁が前記金属膜に接続されて設けられていることを特徴とする請求項2に記載のモジュール。 3. A conductive wall disposed on the periphery of the electronic component of the resin layer so that one principal surface thereof faces a side surface of the electronic component is connected to the metal film. Module described in.  前記樹脂層の前記電子部品の周辺に前記金属膜に接続された導体ビアが設けられていることを特徴とする請求項2または3に記載のモジュール。 4. The module according to claim 2, wherein a conductor via connected to the metal film is provided around the electronic component of the resin layer.  前記金属膜は前記電子部品の上面を被覆して設けられており、前記樹脂層には、前記金属膜と前記モジュール基板に形成された配線電極とを電気的に接続する導電体が設けられていることを特徴とする請求項2ないし4のいずれかに記載のモジュール。 The metal film is provided so as to cover an upper surface of the electronic component, and the resin layer is provided with a conductor that electrically connects the metal film and a wiring electrode formed on the module substrate. The module according to claim 2, wherein the module is a module.  前記電子部品は、
 圧電体により形成された素子基板と、
 前記素子基板の一方の主面の所定領域を囲繞して配置された絶縁層と、
 前記絶縁層に積層配置されて前記素子基板との間に前記絶縁層により囲繞された空間を形成するカバー層と、
 前記所定領域にくし歯電極が設けられることにより形成されたSAWフィルタ素子とを備え、
 前記カバー層が前記実装面に対向し、前記素子基板の他方の主面により形成される上面が前記樹脂層から露出して前記実装面に実装されている
 ことを特徴とする請求項1ないし5のいずれかに記載のモジュール。
The electronic component is
An element substrate formed of a piezoelectric body;
An insulating layer disposed so as to surround a predetermined region of one main surface of the element substrate;
A cover layer that is stacked on the insulating layer and forms a space surrounded by the insulating layer with the element substrate;
A SAW filter element formed by providing comb electrodes in the predetermined region,
6. The cover layer is opposed to the mounting surface, and an upper surface formed by the other main surface of the element substrate is exposed from the resin layer and mounted on the mounting surface. The module according to any one of the above.
 モジュール基板の実装面に電子部品を実装する工程と、
 前記電子部品の側面を被覆するように前記実装面に樹脂を充填して樹脂層を形成する工程と、
 前記電子部品および前記樹脂層それぞれの上面が同一面を形成するように前記樹脂層および前記電子部品を研削または研磨する工程と
 を備えることを特徴とするモジュールの製造方法。
Mounting electronic components on the mounting surface of the module substrate;
Forming a resin layer by filling the mounting surface with a resin so as to cover the side surface of the electronic component;
And a step of grinding or polishing the resin layer and the electronic component such that the upper surfaces of the electronic component and the resin layer form the same surface.
 前記電子部品および前記樹脂層の上面の少なくとも一部に金属膜を形成する工程をさらに備えることを特徴とする請求項7に記載のモジュールの製造方法。 The method for manufacturing a module according to claim 7, further comprising a step of forming a metal film on at least a part of the upper surfaces of the electronic component and the resin layer.
PCT/JP2013/066788 2012-07-19 2013-06-19 Module and module manufacturing method Ceased WO2014013831A1 (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
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JP2017199969A (en) * 2016-04-25 2017-11-02 株式会社村田製作所 Circuit module
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US12395195B2 (en) 2020-10-29 2025-08-19 Murata Manufacturing Co., Ltd. Radio-frequency module and communication device
US12438564B2 (en) 2020-11-13 2025-10-07 Murata Manufacturing Co., Ltd. Radio frequency module and communication device
US12261351B2 (en) 2020-12-07 2025-03-25 Murata Manufacturing Co., Ltd. Radio frequency module and communication device
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