Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M12/00—Hybrid cells; Manufacture thereof
  • H01M12/08—Hybrid cells; Manufacture thereof composed of a half-cell of a fuel-cell type and a half-cell of the secondary-cell type
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M12/00—Hybrid cells; Manufacture thereof
  • H01M12/02—Details
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M8/00—Fuel cells; Manufacture thereof
  • H01M8/02—Details
  • H01M8/0202—Collectors; Separators, e.g. bipolar separators; Interconnectors
  • H01M8/0247—Collectors; Separators, e.g. bipolar separators; Interconnectors characterised by the form
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M8/00—Fuel cells; Manufacture thereof
  • H01M8/02—Details
  • H01M8/0202—Collectors; Separators, e.g. bipolar separators; Interconnectors
  • H01M8/0258—Collectors; Separators, e.g. bipolar separators; Interconnectors characterised by the configuration of channels, e.g. by the flow field of the reactant or coolant
  • H01M8/026—Collectors; Separators, e.g. bipolar separators; Interconnectors characterised by the configuration of channels, e.g. by the flow field of the reactant or coolant characterised by grooves, e.g. their pitch or depth
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
  • Y02E60/10—Energy storage using batteries
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
  • Y02E60/30—Hydrogen technology
  • Y02E60/50—Fuel cells

Definitions

• the invention relates to an electrical energy store according to claim 1.
• ROB Rechargeable Oxide Battery
• ROBs are usually operated at temperatures between 600 ° C and 800 ° C.
• oxygen which is supplied to a (positive) air electrode of the electric cell is converted into oxygen ions, transported by a solid electrolyte and brought to the opposite negative electrode.
• the object of the invention is therefore to provide an electrical energy storage on the basis of a ROB, which compared to the prior art, a cost-effective, easy assembly and temperature-resistant construction of a Guaranteed stacks or a memory cell and to be able to control its electrochemical processes more accurate.
• the solution of the problem consists in an electrical energy storage with a memory cell according to claim 1.
• the memory cell to an air electrode, which communicates with an air supply device.
• the memory cell has a storage electrode, wherein the storage electrodes are adjacent to channels for receiving a storage medium.
• the memory cell of the energy storage is characterized in that partitions are provided, which serve to separate the channels with each other. The intermediate spaces between the partitions thus form the described channels, wherein the partitions are configured such that they have at least one undercut in the region of the storage electrode.
• This undercut causes a storage medium, which is inserted into the channels and stores by chemical conversion processes, which will be discussed in more detail, stores electrical energy, not directly abut the storage electrode.
• the undercuts clamp the storage elements and there remains a gap through which, if necessary, a purge gas can flow.
• This unimpeded flow of a purge gas or a gaseous redox couple used during operation of the memory cell, which produces a material exchange between the storage material and the storage electrode serves to always set the desired concentration of the purge gas or the gaseous redox couple in the region between the storage electrode and the storage medium.
• the spacing of the storage medium from the storage electrode by the undercuts according to the invention thus makes it possible to better meter the chemical processes taking place during the operation of the storage cell and thus to increase the effectiveness of the storage cell. It has been found to be expedient if the undercuts of the partitions L-shaped or T-shaped configuration. Furthermore, it is expedient to arrange the channel-forming partitions on a so-called interconnector plate, which is designed in its planar extent so that on one side of the channels for receiving the storage medium are arranged and in turn air ducts are applied to an air supply device on its back. This in turn leads to a compact design of the electrical energy storage, so that several memory cells in the form of a
• Stacks can be stacked on top of each other.
• the partitions are arranged perpendicular to the interconnector plate. In this case, they in turn have preferred end faces which are plane-parallel with respect to the plane of the interconnector plate and on which an electrode structure comprising at least the storage electrode rests plane-parallel.
• the channels run parallel, which simplifies the production process of the corresponding interconnector plate.
• a transverse groove at the ends of the parallel channels into which a locking device, for example in the form of a locking bolt or a locking plate can be introduced to prevent longitudinal displacement of the storage medium in the channel.
• FIG. 1 shows a schematic representation of a cell of a rechargeable oxide battery
• FIG. 2 shows an exploded view of a stack from above
• FIG. 3 is an exploded view of the stack of FIG. 2 viewed from below;
• Figure 4 is a three-dimensional view of a bottom plate of a
• FIG. 5 shows a plan view of a base plate according to FIG. 4,
• Figure 6 shows a cross section through the bottom plate of FIG. 5 along the line VI and
• Figure 7 is a view of the bottom plate of FIG. 5 in the direction of arrow VII.
• a common structure of a ROB is that at a positive electrode 6, which is also referred to as an air electrode, a process gas, in particular air, is blown through a gas supply 22, wherein the
• Electrode 10 This is connected via a gaseous redox pair, for example a hydrogen-steam mixture, to the porous storage medium in the channel structure.
• a gaseous redox pair for example a hydrogen-steam mixture
• a storage structure 9 of porous material on the negative electrode as the energy storage medium, which contains a functionally active oxidizable material as an active storage material, preferably in the form of iron and iron oxide.
• a gaseous redox couple for example H 2 / H 2 O
• the oxygen ions transported by the solid electrolyte 7, after being discharged at the negative electrode in the form of water vapor through pore channels of the porous storage structure 9, which is the active Storage material 9 comprises transported.
• the metal or the metal oxide (iron / iron oxide) is oxidized or reduced and the oxygen required for this is supplied by the gaseous redox couple H 2 / H 2 O or transported back to the solid electrolyte.
• Oxygen transport via a redox couple is referred to as a shuttle mechanism.
• iron as oxidizable material, ie as active storage material 9
• quiescent voltage of about 1 V as the redox couple H 2 / H 2 O at a partial pressure ratio of 1, otherwise there is an increased resistance to oxygen transport through the diffusing components of this redox couple.
• the diffusion of the oxygen ions through the solid electrolyte 7 requires a high operating temperature of 600 to 800 ° C of the described ROB, but also for the optimal composition of the redox pair H 2 / H 2 0 in equilibrium with the storage material, this temperature range is advantageous.
• the structure of the electrodes 6 and 10 and the electrolyte 7 a high thermal load out but also the memory structure 9, which comprises the active storage material.
• the active storage material tends to sinter, meaning that the individual grains are increasingly merging with each other through diffusion processes, the reactive surface sinks, and the continuous open pore structure required for gas transport disappears.
• the redox couple H 2 / H 2 0 can no longer reach the active surface of the active storage material 6, so that even after a partial discharge of the memory, the internal resistance of the battery is very high, which prevents further technically meaningful discharge.
• ROB Reliable and Low-power
• FIG. 2 shows the structure of a stack, which is viewed from above and is assembled in the order from bottom to top.
• the stack 2 initially comprises a bottom plate 24, which is optionally composed of a plurality of individual plates, which in turn have functional structures and depressions, for example, for air guidance. This composition of individual plates, which is not described here in detail, to the bottom plate 24, for example, by a brazing process.
• the base plate 24 has an air supply 20 and an air discharge 22. As already described, the composition of individual plates in the bottom plate 24 is not here visible channels integrated for air supply. Furthermore, the bottom plate 24 has centering pins 29, by means of which further components of the stack 2 can now be centered.
• a seal 26 which consists for example of a high-temperature-resistant glass frit, which seals the individual plates of the stack 2 at the operating temperatures of the battery.
• the next following plate is a so-called interconnector plate 27, which has two functionally effective sides.
• the air supply channels not shown here are adjacent to the positive electrode 6 of a storage cell 4.
• the interconnector plate 27 On its upper side (memory side 32), the interconnector plate 27 has channels 12, into which the storage medium 9 is introduced.
• the top of the interconnector plate 27 in Figure 2 has the same structure as the top of the base plate 24. Again, the channels 12 are provided for introducing the storage medium 9. This side with the channels 12 is respectively facing the storage electrode 10 of the memory cell 4.
• FIG. 2 shows a further plane of the sequence of electrode structure 25, seal 26 under a closure plate 28 for the overall construction of the stack 2.
• a number of further levels of these components can follow, so that a stack usually has between 10 and more layers of memory cells 4.
• FIG. 3 the same stack 2, which is described in FIG. 2, is shown in the opposite direction.
• the interconnector plate 27 is now also visible from below, in which case the view is directed to the air side 34, which faces the air electrode (air side 34).
• four separate areas on the air side 34 are shown on the interconnector plate, which correspond to a division into four individual memory cells 4 per stack level (this division into four memory cells is to be regarded as purely exemplary).
• the memory cell 4 is thus composed in this example of a quarter of the surface of the respective interconnector plate or the base plate 24 and the cover plate 28 together.
• the respective cell 4 is formed by a sequence of the respective air side 34, seal 26, electrode structure 25 and again in each case a fourth of the memory side 32 of the base plate 24 or the interconnector plate 27.
• the air side 34 is supplied with air by the process gas by a stack-internal air distribution device 8 (also called a manifold), which is not shown here, which comprises a plurality of levels of the stack.
• FIG. 4 shows a three-dimensional representation of a base plate 24, in which the structure of the partition walls 14 forming the channels 12 is explained in greater detail.
• Partitions 14 in this case have a characteristic T-structure, as shown even more clearly in the cross-sectional view of Figure 6, which shows a cross section along the line VI in Figure 5, is shown.
• Holes 19 can also be seen in FIG. 5, which, on the one hand, serve to equip the channels 12 with the storage medium 9, as shown schematically in the plan view of the bottom plate 24 in FIG.
• the storage medium 9 is thus spaced by the undercuts 16 of the voltage applied to end surfaces 18 of the partition walls 14 storage electrode 10. It thus forms another channel 38 which has the height of the undercuts 16 and is arranged between the channel 12 and the storage electrode 10.
• This channel 38 is designed by its cross-sectional geometry so that always enough shuttlegas H 2 0 / H 2 between the storage medium 9 and the storage electrode 10 can be introduced.
• This shuttlegas is preferably introduced through the holes 19 in the memory cell 4.
• a purge gas for example nitrogen, can also be conducted through the channels 38 in preparation for the operation of the storage cell 4 or of the energy store.
• the channels 38 thus serve to provide sufficient shuttl gas in the area of the storage medium and to regulate its concentration for optimal electrochemical operation of the energy store.
• the described T-shaped or L-shaped profiles of the partitions 14 can be produced relatively easily by a stepped end mill manufacturing technology.
• the illustrated channel structure or partition wall structure of the base plate or in an analogous configuration on an interconnector plate 27 is favorable in terms of process technology.

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• Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Chemical & Material Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Electrochemistry (AREA)
• General Chemical & Material Sciences (AREA)
• Life Sciences & Earth Sciences (AREA)
• Sustainable Development (AREA)
• Sustainable Energy (AREA)
• Hybrid Cells (AREA)

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Citations (6)

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• 2012
  • 2012-06-29 DE DE102012211318.5A patent/DE102012211318A1/de not_active Withdrawn
• 2013
  • 2013-05-27 WO PCT/EP2013/060842 patent/WO2014001004A1/fr not_active Ceased
  • 2013-05-27 US US14/411,348 patent/US9722290B2/en not_active Expired - Fee Related

Patent Citations (6)

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