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WO2014097508A1 - Élément laser à semi-conducteur au nitrure - Google Patents

Élément laser à semi-conducteur au nitrure Download PDF

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Publication number
WO2014097508A1
WO2014097508A1 PCT/JP2013/005075 JP2013005075W WO2014097508A1 WO 2014097508 A1 WO2014097508 A1 WO 2014097508A1 JP 2013005075 W JP2013005075 W JP 2013005075W WO 2014097508 A1 WO2014097508 A1 WO 2014097508A1
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Prior art keywords
film
face
nitride semiconductor
semiconductor laser
metal oxide
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PCT/JP2013/005075
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English (en)
Japanese (ja)
Inventor
真治 吉田
篤範 持田
貴大 岡口
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Panasonic Corp
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Panasonic Corp
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Priority to JP2013552438A priority Critical patent/JP5488775B1/ja
Priority to CN201380031459.1A priority patent/CN104364983B/zh
Publication of WO2014097508A1 publication Critical patent/WO2014097508A1/fr
Priority to US14/556,195 priority patent/US9312659B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Definitions

  • the present invention relates to a nitride semiconductor laser device, and more particularly to a nitride semiconductor laser device having a light emitting end face provided with a protective film.
  • a nitride semiconductor laser element is used as a light source for reproducing and recording optical disk media such as a Blu-ray (registered trademark) Disc.
  • it has been studied to adjust the wavelength of emitted light and use it as a processing light source such as laser annealing, or a display light source such as a projector or a laser TV.
  • a nitride semiconductor laser element and a phosphor as a solid light source for a display or a lighting device is being studied.
  • Patent Document 1 and Patent Document 2 the light output is improved to several hundreds mW by a structure that suppresses death due to optical destruction.
  • a light emitting end surface from which laser light is emitted (a light emitting end surface is a front end surface and the other is a rear end surface or a rear end surface)
  • Proposals have been made to suppress optical destruction by hardening and stabilizing the protective film covering the rear end face.
  • a conventional nitride semiconductor laser device 400 has a nitride semiconductor layer 410 including an active layer (light emitting layer) on an n-type GaN substrate.
  • the nitride semiconductor layer 410 has a front end surface 413 and a rear end surface 414 on the rear surface.
  • An end face coat film composed of a first end face coat film 415 and a second end face coat film 416 is formed on the front end face 413, and an end face coat film 417 is formed on the rear end face 414.
  • AlN aluminum nitride film
  • Al 2 O 3 aluminum oxide
  • the deterioration of the characteristics of the nitride semiconductor laser device is not sufficiently suppressed when the light output is higher, especially when the light output exceeds 1 watt. It is.
  • An object of the present invention is to provide a nitride semiconductor laser device that solves the conventional problems, suppresses deterioration of the light emitting end face and / or coat film even during high light output operation, and can be driven for a long time.
  • a nitride semiconductor laser device of the present invention includes a semiconductor stacked body made of a group III nitride semiconductor and having a light emitting end face, and a dielectric multilayer formed so as to cover the light emitting end face in the semiconductor stacked body.
  • a protective film comprising a film, and the protective film is composed of an end face protective layer and an oxygen diffusion suppression layer, and the end face protective layer and the oxygen diffusion suppression layer are arranged in the order of the end face protective layer and the oxygen diffusion suppression layer from the light emitting end face side.
  • the end face protective layer is a layer made of an aluminum nitride film
  • the oxygen diffusion suppression layer has a structure including at least one metal oxide film
  • the metal oxide film is emitted from the light emitting end face. Crystallized by the laser beam.
  • the oxygen diffusion suppression layer further includes at least one metal oxide film and at least one silicon oxide film, and the silicon oxide film and the metal oxide from the end face protective layer side. It is preferable to arrange
  • the silicon oxide film is inserted between the aluminum nitride film and the metal oxide film, the increase in film stress due to the progress of the oxidation reaction is mitigated, and the film peeling in the protective film is suppressed. Therefore, a nitride semiconductor laser element with high output and long life can be realized.
  • the oxygen diffusion suppression layer further includes at least one metal oxide film and at least two silicon oxide films, and the metal oxide film is formed by two silicon oxide films. It is preferable to be sandwiched.
  • the metal oxide film is preferably an oxide film containing any of aluminum, zirconium, hafnium, titanium, tantalum, and zinc.
  • the crystallization reaction proceeds by light absorption in the vicinity of a wavelength of 400 nm, and the metal oxide crystallized film can inhibit the permeation of oxygen and prevent oxygen from entering the protective film.
  • a nitride semiconductor laser device with high output and long life can be realized.
  • the end face protective layer further includes a first aluminum nitride film that directly covers the light emitting end face, and a first metal oxide film that is disposed so as to cover the first aluminum nitride film And a second aluminum nitride film arranged to cover the first metal oxide film.
  • the end face is protected by the two-layer aluminum nitride film, it is possible to inhibit the diffusion of oxygen to the light emitting end face, so that a high-power and long-life nitride semiconductor laser element can be realized.
  • the first metal oxide film is an aluminum oxide film and is crystallized by laser light emitted from the light emitting end face.
  • the metal oxide film is sandwiched between aluminum nitride films, and crystallizes in a state of less diffused oxygen, so that a crystallized aluminum oxide film having a high film density is formed, and thus light emission. It is possible to suppress the diffusion of oxygen to the end face, and to realize a nitride semiconductor laser element with high output and long life.
  • the first aluminum nitride film may have m-axis alignment as a main component with respect to the light emitting end face, and the second aluminum nitride film may have c-axis alignment as a main component. preferable.
  • the metal oxide film sandwiched between the aluminum nitride films forms a high-density crystal film by the substrate effect of the m-axis oriented aluminum nitride film, and the second aluminum nitride film is c-axis oriented. Since the stress is relieved by this, it is possible to inhibit the permeation of oxygen and to prevent film peeling due to crystallization, and to realize a nitride semiconductor laser element with high output and long life.
  • the reflectance of the light emitting end face is a maximum value or a minimum value of the reflectance spectrum with respect to the wavelength of the laser emitted from the light emitting end face.
  • the region where the metal oxide film is crystallized by the laser beam is a near-field image region of the laser beam.
  • the metal oxide film is preferably zirconium oxide or titanium oxide.
  • zirconium oxide and titanium oxide can quickly form a crystallized film having a high film density because of rapid progress of photocrystallization, and can quickly suppress the diffusion of oxygen to the light emitting end face.
  • a nitride semiconductor laser device with high output and long life can be realized.
  • a nitride semiconductor laser device includes a semiconductor stacked body made of a group III nitride semiconductor and having a light emitting end face, and a protective film made of a dielectric multilayer film so as to cover the light emitting end face in the semiconductor stacked body.
  • the protective film is composed of an end face protective layer and an oxygen diffusion suppression layer, and the end face protection layer and the oxygen diffusion suppression layer are arranged in order of the end face protection layer and the oxygen diffusion suppression layer from the light emitting end face side.
  • the layer is a layer having a crystalline aluminum oxynitride film, the oxygen diffusion suppression layer has a structure including at least one metal oxide film, and the metal oxide film is a laser beam emitted from the light emitting end face. It is crystallized by.
  • the end face protective layer further includes a first aluminum oxynitride film directly covering the light emitting end face, and a first metal oxide oxide disposed so as to cover the first aluminum oxynitride film. It is preferable to be composed of a physical film and a second aluminum oxynitride film disposed so as to cover the first metal oxide film.
  • the end face is protected by the two-layer aluminum oxynitride film, and diffusion of oxygen to the light emitting end face can be inhibited, so that a nitride semiconductor laser element with high output and long life can be realized.
  • the first aluminum oxynitride film has an m-axis orientation as a main component with respect to the light emitting end face, and the second aluminum oxynitride film has a c-axis orientation as a main component. It is preferable.
  • the metal oxide film sandwiched between the aluminum oxynitride films forms a high-density crystal film by the substrate effect of the m-axis oriented aluminum oxynitride film, and the second aluminum oxynitride film is c Since the stress is relieved by the axial orientation, a nitride semiconductor laser device with high output and long life can be realized by inhibiting oxygen permeation and preventing film peeling due to crystallization.
  • the atomic composition of nitrogen in the aluminum oxynitride film is preferably 40% or more.
  • the nitride semiconductor laser device provides a long-lasting and high reliability because a protective end face protective film that does not cause an optical breakdown is obtained without causing an oxidation reaction of the protective film even during high output operation. can do.
  • FIG. 1A is a cross-sectional view relating to a process for manufacturing a nitride semiconductor laser element according to the first embodiment of the present invention.
  • FIG. 1B is a cross-sectional view relating to a process for manufacturing a nitride semiconductor laser device according to the first example of the present invention.
  • FIG. 2 is a sectional view of the nitride semiconductor laser device according to the first embodiment of the present invention.
  • FIG. 3A is a cross-sectional view schematically showing an end face protective film forming step of the nitride semiconductor laser device according to the first example of the present invention.
  • FIG. 1A is a cross-sectional view relating to a process for manufacturing a nitride semiconductor laser element according to the first embodiment of the present invention.
  • FIG. 1B is a cross-sectional view relating to a process for manufacturing a nitride semiconductor laser device according to the first example of the present invention.
  • FIG. 2 is a sectional view of
  • FIG. 3B is a cross-sectional view schematically showing the end face protective film forming step of the nitride semiconductor laser device according to the first example of the present invention.
  • FIG. 3C is a cross-sectional view schematically showing the end face protective film forming step of the nitride semiconductor laser device according to the first example of the present invention.
  • FIG. 3D is a cross-sectional view schematically showing an end face protective film forming step of the nitride semiconductor laser element according to the first example of the present invention.
  • FIG. 4 is a diagram showing the reflectance spectrum of the multilayer protective film on the front end face of the nitride semiconductor laser device according to the first example of the present invention.
  • FIG. 5 is a cross-sectional view of a nitride semiconductor laser device in which the nitride semiconductor laser device according to the first embodiment of the present invention is mounted in a package.
  • FIG. 6 is a sectional view of a nitride semiconductor laser device according to the second embodiment of the present invention.
  • FIG. 7 is a diagram showing the reflectance spectrum of the multilayer protective film on the front end face of the nitride semiconductor laser device.
  • FIG. 8 is a cross-sectional transmission electron beam image of the nitride semiconductor laser element according to Comparative Example 1 after aging.
  • 9A is a composition distribution diagram of aluminum in the vicinity of the light emitting end surface after aging of the nitride semiconductor laser element according to Comparative Example 1.
  • FIG. 9B is a composition distribution diagram of oxygen in the vicinity of the light emitting end surface after aging of the nitride semiconductor laser element according to Comparative Example 1.
  • FIG. 10 is a diagram comparing deterioration curves of the nitride semiconductor laser element according to the present invention and the nitride semiconductor laser element according to Comparative Example 2 by an aging test.
  • FIG. 11A is a diagram showing a cross-sectional transmission electron beam image in the vicinity of the light emitting end face after aging of the nitride semiconductor laser element according to the present invention.
  • FIG. 11B is a diagram showing a cross-sectional transmission electron image in the vicinity of the light emitting end face after aging of the nitride semiconductor laser element according to Comparative Example 2.
  • FIG. 12A is a diagram showing a transmission electron diffraction pattern of an altered region of the Al 2 O 3 film of the multilayer protective film on the front end face of the nitride semiconductor laser device according to the present invention.
  • FIG. 12B is a diagram showing a transmission electron diffraction pattern of an unmodified region of the Al 2 O 3 film of the multilayer protective film on the front end face of the nitride semiconductor laser device according to the present invention.
  • FIG. 13A is a diagram showing a cross-sectional transmission electron beam image after aging of the nitride semiconductor laser element according to Comparative Example 3.
  • 13B is a diagram showing a cross-sectional transmission electron beam image after aging of the nitride semiconductor laser element according to Comparative Example 4.
  • FIG. 14 is a graph showing the relationship between the oxygen flow rate and the atomic composition of the AlON film according to this example.
  • FIG. 15 is a graph showing the relationship between the oxygen flow rate and the refractive index of the AlON film according to this example.
  • FIG. 16 is a diagram showing the relationship between the atomic composition of N atoms and the refractive index of the AlON film according to this example.
  • FIG. 17 is a diagram showing an X-ray diffraction spectrum of the Group C AlON film according to this example.
  • FIG. 18 is a schematic cross-sectional view of a conventional nitride semiconductor laser element.
  • the structure of the nitride semiconductor laser device according to the first embodiment will be described together with a manufacturing method as a gallium nitride (GaN) blue-violet laser device having a center wavelength of emitted laser light of 390 nm to 430 nm.
  • GaN gallium nitride
  • the laminated structure of the nitride semiconductor laser device of this example is obtained by epitaxially growing a semiconductor laminated body 50 made of a plurality of group III nitride semiconductors on an n-type substrate 11 made of n-type GaN, for example, by metal organic chemical vapor deposition (MOCVD). It is constituted by doing.
  • MOCVD metal organic chemical vapor deposition
  • the multiple quantum well active layer 15 is composed of a well layer made of undoped InGaN having a thickness of about 7 nm and a barrier layer made of undoped In 0.02 Ga 0.98 N having a thickness of 20 nm. It has a double quantum well structure.
  • the In composition of the well layer is adjusted so that the oscillation wavelength is 405 nm, for example.
  • the p-type electron blocking layer 17 may be disposed between the multiple quantum well active layer 15 and the p-type light guide layer 16.
  • the p-type cladding layer 18 is a superlattice made of p-type Al 0.1 Ga 0.9 N and p-type GaN each having a Mg concentration of 1 ⁇ 10 19 cm ⁇ 3 and a thickness of about 2 nm.
  • a p-type superlattice cladding layer having a structure and a total film thickness of 0.5 ⁇ m may be used.
  • a mask layer 20 made of SiO 2 is formed on the p-type contact layer 19 of the semiconductor stacked body 50 of FIG. 1A. Subsequently, the mask layer 20 is patterned in a stripe shape extending in the ⁇ 1-100> direction with respect to the crystal axis of the n-type substrate 11 by lithography and etching.
  • the p-type contact layer 19 and the p-type cladding layer 18 are A striped ridge waveguide 50a extending in the ⁇ 1-100> direction of the crystal axis is formed.
  • the thickness (remaining film thickness) of the side portion of the ridge waveguide 50a in the p-type cladding layer 18 is, for example, about 0.1 ⁇ m.
  • the width of the lower portion of the ridge waveguide 50a is, for example, about 10 ⁇ m, and the width of the upper portion of the ridge waveguide 50a is, for example, about 8 ⁇ m.
  • the mask layer 20 shown in FIG. 1B is removed, and then, for example, palladium (Pd) is formed on the p-type contact layer 19 constituting the ridge waveguide 50a by lithography or vacuum deposition.
  • platinum (Pt) laminated film 21 is formed.
  • the n-type substrate 11 is thinned (backside polishing) so as to facilitate cleavage.
  • an N-side electrode 22 made of, for example, a laminated film of titanium (Ti) and gold (Au) is formed on the back surface of the n-type substrate 11.
  • the length of the resonator formed below the ridge waveguide 50a in the semiconductor stacked body 50 is, for example, between about 600 ⁇ m and about 2000 ⁇ m, preferably about 800 ⁇ m or about 1200 ⁇ m.
  • the semiconductor laminated body 50 is cleaved. By this cleavage, an end face mirror having a plane orientation of (1-100) plane is formed in the semiconductor stacked body 50.
  • the end face mirror is configured by forming a front end face 28 that emits laser light and a rear end face 29 that reflects the laser light to face each other.
  • the negative sign “ ⁇ ” attached to the index of the crystal axis and the plane orientation represents the inversion of the index following the sign for convenience.
  • (1-100) is expressed by the following formula 1.
  • ⁇ 1-100> is expressed by the following formula 2.
  • a multilayer protective film is formed on each end face of the nitride semiconductor laser element, which can prevent deterioration of the end face of the semiconductor stacked body 50 and adjust the reflectivity of the end face even during high light output.
  • a multilayer protective film 30 on the front end surface is formed on the front end surface 28 from which the laser beam is emitted, and the multilayer protective film 30 on the front end surface is composed of the end surface protective layer 31 and oxygen diffusion suppression.
  • the layer 32 is stacked.
  • the end face protective layer 31 is composed of a protective film 33 made of a crystalline aluminum nitride film (AlN).
  • a silicon oxide film 34 On the protective film 33, a silicon oxide film 34, a silicon oxide film 36, and a silicon oxide film 34 are formed.
  • the metal oxide film 35 sandwiched between the silicon oxide films 36 is laminated to form the oxygen diffusion suppression layer 32.
  • the metal oxide film 35 is specifically made of aluminum oxide (Al 2 O 3 ).
  • a multilayer protective film 25 in which a plurality of pairs of aluminum oxide (Al 2 O 3 ) / zirconium oxide (ZrO 2 ) are stacked is formed on the rear end surface 29 facing the front end surface 28.
  • the rear end face has a structure in which a plurality of pairs of SiO 2 / ZrO 2 , AlON / SiO 2 , Al 2 O 3 / SiO 2, or AlN / SiO 2 are laminated as long as a desired reflectance can be obtained. Also good.
  • the reflectance of the multilayer protective film formed on the front end face 28 and the rear end face 29 is designed so that the reflectance on the front end face side is about 1 to 15% and the reflectance on the rear end face is about 90 to 100%.
  • the reflectance is obtained by appropriately designing the thickness of each protective film on the front end face and the rear end face.
  • the protective film 33 made of AlN, the silicon oxide film 34, the silicon oxide film 36, and the metal oxide film 35 made of Al 2 O 3 constituting the multilayer protective film are formed by electron cyclotron resonance (ECR) sputtering. Formed using.
  • ECR electron cyclotron resonance
  • a multilayer protective film can be formed without directly irradiating sputter ions on the front end face and the rear end face formed by cleavage. For this reason, it can suppress that a semiconductor surface is damaged by ion irradiation and a crystal defect increases. For this reason, it is preferable as a film forming method of the end face coat in the semiconductor laser element.
  • a high frequency (RF) sputtering method or a magnetron sputtering method may be used.
  • FIGS. 3A to 3D a manufacturing method of the nitride semiconductor laser device, particularly a specific manufacturing method of the multilayer protective film 30 on the front end face and the multilayer protective film 25 on the rear end face will be described with reference to FIGS. 3A to 3D.
  • a case where an ECR sputtering method is used as an example of a method of forming the multilayer protective film 30 on the front end face and the multilayer protective film 25 on the rear end face will be described.
  • the semiconductor stacked body 50 on the n-type substrate 11 on which the P-side electrode 21 and the N-side electrode 22 are formed is cleaved to produce a laser bar sample 40 on which the light emitting end face of the semiconductor laser element is formed.
  • the laser bar sample refers to a state in which a plurality of semiconductor laser elements share the same end face, and a semiconductor laser element can be obtained by dividing the laser bar sample.
  • the laser bar sample 40 is disposed in the ECR sputtering apparatus 43.
  • FIG. 3B schematically shows installation of the laser bar sample 40 in the ECR sputtering apparatus 43.
  • a dielectric film is formed with the light emitting surface as the film formation surface.
  • the film is formed as follows. First, in the ECR sputtering apparatus 43, a plurality of laser bar samples 40 are arranged on a table 44 using a jig 45, and the front end surface of the laser bar sample 40 is directed toward the target material 41 for sputtering and generated in the plasma generation chamber 42. Using the plasma flow, as shown in FIG. 3C, an AlN film or the like is formed on the front end face 28 to form a multilayer protective film 30 on the front end face. Next, as shown in FIG.
  • the rear end face 29 of the laser bar sample 40 is directed toward the target material 41 for sputtering, and an AlN film or the like is formed on the rear end face to form the multilayer protective film 25 on the rear end face.
  • an AlN film or the like is formed on the rear end face to form the multilayer protective film 25 on the rear end face.
  • the AlN film constituting the end face protective layer is formed by reactive sputtering using a combination of a target material made of AlN and nitrogen (N 2 ) gas or a combination of a target material made of Al and nitrogen gas as the target material 41 for sputtering. Film formation is possible.
  • argon (Ar) as a reference gas and nitrogen gas as a reactive gas are used in combination with a metal target material made of Al whose purity can be easily increased by metal refining.
  • the thickness of the protective film 33 is set to about 30 nm.
  • the AlN film has a large film stress, and when the AlN film is formed on the cleaved end face of the laser bar sample 40 with a thickness of 50 nm or more, film peeling occurs. Therefore, the thickness of the protective film 33 (AlN film) of the end face protective layer 31 is desirably 50 nm or less. Further, in order to suppress heat generation due to light absorption, it is desirable to shorten the optical path length of light in the AlN film. Also from this, the thickness of the protective film 33 (AlN film) of the end face protective layer 31 is 50 nm or less. Is desirable.
  • the AlN film when the AlN film is formed as a thin film having a thickness of less than 5 nm, oxygen and the like are easily transmitted through the AlN film, which causes the end face of the laser bar sample 40 to be oxidized. Further, if the thickness of the AlN film is less than 5 nm, it is difficult to control the thickness at the time of film formation, and the film thickness varies. Therefore, the film thickness of the protective film 33 (AlN film) constituting the end face protective layer 31 is desirably 5 nm or more and 50 nm or less, and it is more preferable to set the film thickness to about 30 nm as shown in this embodiment.
  • the AlN film which is the protective film 33 of the present embodiment, is formed by setting each gas flow rate at room temperature, argon (Ar) gas at 30 ml / min, and nitrogen (N 2 ) gas at 4.7 ml. / Min. With this configuration, a robust AlN film can be formed.
  • the silicon oxide film (SiO 2 film) and the metal oxide film (Al 2 O 3 film) constituting the oxygen diffusion suppression layer 32 of this embodiment are also formed by ECR sputtering.
  • SiO 2 and Al 2 O 3 can be formed by using a Si target and an Al metal target as target materials for ECR sputtering, and using a combination of Ar and oxygen as a reactive gas. Therefore, the oxygen diffusion suppression layer 32 can be easily formed by the configuration of this embodiment.
  • the silicon oxide film 34 (SiO 2 film) and the outermost silicon oxide film 36 (SiO 2 film) in contact with the AlN film are formed under the flow conditions of each gas, and 30 ml of Ar gas. / Min and oxygen (O 2 ) gas at 7.9 ml / min. Further, for the metal oxide film 35 (Al 2 O 3 film) sandwiched between the silicon oxide films (SiO 2 films) 34 and 36, Ar gas is set to 20 ml / min as the film formation flow rate condition, and oxygen (O 2 ) gas is used. The film is formed at 4.9 ml / min.
  • each layer of the multilayer protective film 30 on the front end face of this embodiment is adjusted so that the reflectance of the light exit surface is about 7%.
  • the silicon oxide films (SiO 2 films) 34 and 36 are 100 nm and 70 nm, respectively, and the metal oxide film 35 (Al 2 O 3 film) is 80 nm.
  • FIG. 4 shows an end face reflectance spectrum of the multilayer protective film 30 on the front end face on the light exit surface of the present embodiment.
  • the reflection spectrum of the multilayer protective film 30 on the front end face is designed to be a maximum value at about 405 nm which is the oscillation wavelength of the nitride semiconductor laser element.
  • each layer of the multilayer protective film 25 on the rear end face of this embodiment is designed so that the reflectance is about 95%.
  • the above-described multilayer protective film 30 on the front end face as specifically described is formed on the front end face 28 side of the laser bar sample 40 by ECR sputtering as shown in FIG. 3C.
  • a multilayer protective film 25 at the rear end face is formed on the rear end face 29 side by ECR sputtering. Then, by dividing the laser bar sample 40 into individual nitride semiconductor laser elements by cleavage, the nitride semiconductor laser element 1 is manufactured as shown in FIG. 3D.
  • a nitride semiconductor laser device 51 configured by packaging the nitride semiconductor laser element 1 will be described with reference to FIG.
  • a nitride semiconductor laser device 51 for example, a plurality of electrode terminals 52a are formed on one surface of a stem 52 made of metal, and a laser holding portion 52b is formed on the other surface.
  • the nitride semiconductor laser element 1 is fixed on the laser holding portion 52b of the metal stem 52 via a submount 56.
  • the stem 52 covers the nitride semiconductor laser device 1 and the laser holding portion 52b and has a cap 53 made of a metal having a window portion 53a at a position facing the multilayer protective film 30 on the front end face of the nitride semiconductor laser device 1. Is fixed. A glass plate 54 is fixed to the window 53a from the inside, and a space constituted by the stem 52, the cap 53, and the glass plate 54 is sealed. The sealed space in which the nitride semiconductor laser element 1 is disposed is filled with a sealing gas 55 made of dry air that does not contain moisture or a rare gas such as argon.
  • a sealing gas 55 made of dry air that does not contain moisture or a rare gas such as argon.
  • the protective film 33 (AlN film) and the metal oxide film 35 (Al 2 O 3 film) are separated by the silicon oxide film 34 (SiO 2 film), the metal oxide film 35 (Al 2 by O 3 film) is crystallized by the laser light emitted from the light emitting end face, the metal oxide film 35 (Al 2 O 3 film) oxygen diffusion by increasing the density by crystallization protective film inside the the inhibition of Deterioration can be suppressed, and a high output and long-life nitride semiconductor laser device can be realized.
  • FIG. 6 is a schematic sectional view of a nitride semiconductor laser device 201 according to the second embodiment of the present invention.
  • the front end face 28 of the semiconductor stacked body 50 is formed with a multi-layer protective film 230 on the front end face formed by laminating the end face protective layer 261 and the oxygen diffusion suppression layer 232.
  • the end face protective layer 261 has a three-layer structure, and an AlN film is formed as the first protective film 263 in contact with the front end face 28.
  • a metal oxide film that is an Al 2 O 3 film is formed thereon as the second protective film 264.
  • An AlN film is formed as the third protective film 265 that covers the second protective film 264.
  • the oxygen diffusion suppression layer 232 has the same configuration as that of the first embodiment, and has a configuration in which a metal oxide film (Al 2 O 3 film) 235 is sandwiched between silicon oxide films (SiO 2 films) 234 and 236.
  • the silicon oxide film, the AlN film and the Al 2 O 3 film constituting the metal oxide film, and the SiO 2 film are formed by the same method as in the first embodiment.
  • the thickness of each layer constituting the multilayer protective film 230 on the front end face is designed so that the reflectance of the multilayer protective film 230 on the front end face is 6%.
  • the first protective film (AlN film) 263 is 20 nm
  • the second protective film (Al 2 O 3 film) 264 is 10 nm
  • the third protective film (AlN film) 265 is 15 nm
  • the metal oxide film (Al 2 O 3 film) 235 is set to 89 nm
  • the silicon oxide film (SiO 2 film) 236 is set to 235 nm.
  • the packaging of the nitride semiconductor laser device 201 is mounted on the stem 52 by the same method as that described in the first embodiment.
  • the first protective film (AlN film) 263 is a highly monocrystalline film mainly having an m-axis orientation
  • the third protective film (AlN film) 265 mainly has a c-axis orientation.
  • the third protective film (AlN film) 265 and the metal oxide film (Al 2 O 3 film) 235 are separated from each other by the silicon oxide film (SiO 2 film) 234.
  • the Al 2 O 3 film) 235 is crystallized by the laser light emitted from the light emitting end face, the increase of the density of the metal oxide film (Al 2 O 3 film) 235 inhibits the diffusion of oxygen, and the inside of the protective film Deterioration can be suppressed, and a high output and long-life nitride semiconductor laser device can be realized.
  • the metal oxide film (Al 2 O 3 film) 264 is A high-density crystal film can be formed by the substrate effect of the first protective film (AlN film) 263 that is m-axis oriented. Furthermore, since the third protective film (AlN film) 265 is c-axis oriented, the stress in the multilayer protective film on the front end face can be relieved. Therefore, in the multilayer protective film on the front end face, it is possible to inhibit oxygen permeation and prevent film peeling due to crystallization.
  • the reflectance of the front end face was designed so that the reflectance at the oscillation wavelength becomes the maximum value of the reflectance spectrum as in the nitride semiconductor laser device of the first embodiment.
  • FIG. 7 shows the reflectance spectrum of the front end face of the nitride semiconductor laser device according to the second embodiment.
  • the film thickness is determined so that the reflectance has a maximum value when the oscillation wavelength is 410 nm.
  • the metal oxide film of the multilayer protective film on the front end face is increased in film density by photocrystallization, and the refractive index of the metal oxide film is 0.05 to 0.
  • the characteristic fluctuation of the nitride semiconductor laser device can be reduced. That is, by making the reflection spectrum of the multilayer protective film on the front end face the maximum value of the reflectance at the oscillation wavelength, fluctuations in the semiconductor laser characteristics can be suppressed even with respect to the refractive index change. Therefore, stable laser characteristics can be ensured even during high output operation, and a high output and high reliability nitride semiconductor laser device can be provided.
  • the first embodiment and the second embodiment according to the present invention can be explained by the same mechanism.
  • the multilayer protective film on the front end face of the nitride semiconductor laser device of Comparative Example 1 has a first end face protective film that is an AlN crystal film in contact with the end face, and Al 2 O 3 in contact with the first end face protective film.
  • the second end face protective film is formed, and the third end face protective film is formed in contact with the second end face protective film.
  • FIG. 8 shows a cross-sectional TEM image in the vicinity of the front end face after the nitride semiconductor laser element of Comparative Example 1 was subjected to a 1000-hour aging test with a light output of the watt class.
  • the multilayer protective film on the front end surface has a three-layer structure, and the first end surface protective film 272 in contact with the front end surface 271 is a crystal film made of 30 nm AlN.
  • the second end face protective film 273 is 45 nm of Al 2 O 3
  • the third end face protective film 274 is 65 nm of SiO 2 .
  • the reflectance of the multilayer protective film on the front end face is set to about 6%.
  • the three-layer end face protective film was continuously formed by ECR sputtering. Note that the gas flow rate conditions during the formation of each film were the same as in the first example.
  • the energization condition was an aging test with a constant current, the case temperature was 60 ° C., and the operating current was 1.3 A. The initial light output at this time was about 2 W.
  • the first end face protective film (AlN film) 272 and the second end face protective film (Al 2 O 3 film) 273 are vigorously solid-phase reacted. Moreover, film peeling 275 accompanying these solid-phase reactions is also observed.
  • a solid phase reaction or film peeling occurs, light absorption or light scattering of the laser light occurs at the laser light emitting portion of the nitride semiconductor laser element, and a large optical loss occurs at the end face.
  • local heat generation at the end face due to light absorption reduces the band gap of the end face and increases light absorption inside the GaN crystal.
  • the temperature rise and the positive feedback of light absorption increase the temperature of the end face in an accelerated manner, and cause local deterioration in the vicinity of the end face.
  • the structure of the active layer is disturbed in the vicinity of the front end face of the active layer 76.
  • This disturbance of the active layer is due to the diffusion of In in the InGaN quantum well, and is considered to be caused by the temperature rise of the end face due to the deterioration of the end face protective film described above.
  • FIG. 9A and 9B show the composition distribution of aluminum (Al) and oxygen (O) in the end face region shown in FIG.
  • AlN and Al 2 O 3 can be distinguished by the difference in Al density, but in the light emission region, the boundary between AlN and Al 2 O 3 is unclear, and the solid-phase reaction has progressed. I understand.
  • From the oxygen distribution shown in FIG. 9B it can be clearly seen that only the light emission region has a large diffusion of oxygen toward the AlN side. From this result, it can be concluded that the deterioration phenomenon of the end face protective film generated by the aging test is an oxidation reaction of the AlN film accompanied by oxygen diffusion (oxidation reaction).
  • the nitride semiconductor laser device of the present invention In order to suppress the degradation of the end face in the high light output operation such as the watt class, it is necessary to suppress the oxygen diffusion and the solid-phase reaction as compared with the prior art. is there. On the other hand, in the configuration according to the embodiment of the present invention, the oxygen diffusion can be suppressed by the photocrystallization of the Al 2 O 3 film of the oxygen diffusion suppression layer.
  • FIG. 10 is a graph comparing the relationship between the optical output and time in the aging test of the nitride semiconductor laser element of this example and the nitride semiconductor laser element of Comparative Example 2.
  • a degradation curve 291 shown in the figure is a degradation curve of the light output of the nitride semiconductor laser device having the end face protective film configuration shown in the second embodiment of the present invention.
  • FIG. 11A shows a cross-sectional photograph of the vicinity of the end face of the nitride semiconductor laser device according to the second embodiment of the present invention. In FIG.
  • the AlN film 311 corresponding to the first protective film 263, the Al 2 O 3 film 312 corresponding to the metal oxide film 264, and the third protective film 265 are formed on the front end surface 271 from the semiconductor stacked body 50 side.
  • the corresponding AlN film 313, the SiO 2 film 314 corresponding to the silicon oxide film 234, the Al 2 O 3 film 315 corresponding to the metal oxide film 235, and the SiO 2 film 316 corresponding to the silicon oxide film 236 were formed in this order. The configuration is shown.
  • the degradation curve 292 shows a degradation curve of the light output of the nitride semiconductor laser element of Comparative Example 2.
  • the structure of the nitride semiconductor laser element of Comparative Example 2 is the same as that of the nitride semiconductor laser element of Example 2 shown in FIG. 6 in the multilayer protective film structure on the front end face, and silicon oxide in contact with the third protective film (AlN film) 265.
  • An end face protective film having a configuration in which the film (SiO 2 film) 234 is removed is provided.
  • the structure of the multilayer protective film on the front end face of the nitride semiconductor laser element of Comparative Example 2 is shown in FIG. 11B. In FIG.
  • an AlN film 301 corresponding to the first protective film 263, an Al 2 O 3 film 302 corresponding to the second protective film 264, and a third protective film are sequentially formed on the front end surface 271 from the semiconductor stacked body 50 side.
  • An AlN film 303 corresponding to 265, an Al 2 O 3 film 304 corresponding to the metal oxide film 235, and an SiO 2 film 305 corresponding to the silicon oxide film 236 are formed.
  • the test was conducted at a case temperature of 60 ° C. and an operating current of 1.3 A. At this time, the light outputs of the nitride semiconductor laser elements of this example and comparative example 2 were both about 2.0 W in the initial energization.
  • the nitride semiconductor laser device of this example shown by the degradation curve 291 operates with almost no degradation until 1000 hours, whereas the nitride semiconductor laser device of Comparative Example 2 (multi-layer protection of the front end face)
  • the deterioration curve 292 of the structure in which the film is in direct contact with the AlN film 303 and the Al 2 O 3 film 304 without the SiO 2 film the death occurs in about 820 hours.
  • FIG. 11A shows a cross-sectional TEM image of the nitride semiconductor laser element of the present example indicated by the degradation curve 291 in the above in the vicinity of the front end face after the 1000-hour aging test.
  • FIG. 11B shows a cross-sectional TEM image near the front end face of the nitride semiconductor laser element of Comparative Example 2 shown in the deterioration curve 292 after 820 hours.
  • the altered region 317 was an Al 2 O 3 crystal layer.
  • FIG. 12A and FIG. 12B respectively show the transmission electron diffraction patterns of the altered region 317 and the other unmodified region 318 in the Al 2 O 3 film 315 of FIG. 11A.
  • the region of the altered region 317 is a crystalline film because a clear electron beam diffraction pattern was obtained.
  • the electron diffraction pattern of the region 318 where the Al 2 O 3 film is not altered is a halo pattern in which there is no diffraction peak that is characteristic of amorphous.
  • the altered region 317 substantially coincided with the near-field image region of the laser light from the semiconductor laser element.
  • the Al 2 O 3 film 315 is formed as an amorphous Al 2 O 3 film at the time of film formation, but it is considered that the Al 2 O 3 film is transformed into a highly crystalline Al 2 O 3 film by irradiation with emitted light for a long time. Furthermore, this result shows that the deterioration of the end face protective film such as film peeling and solid phase reaction of the AlN film can be drastically suppressed by using the oxygen diffusion suppression layer in which the Al 2 O 3 film is sandwiched between the SiO 2 films. Yes.
  • FIG. 13A and 13B are cross-sectional TEM images of the front end face region of the nitride semiconductor laser elements of Comparative Example 3 and Comparative Example 4 after an aging test.
  • Each of Comparative Example 3 and Comparative Example 4 has a multilayer protective film on the front end surface of a three-layer structure of AlN / Al 2 O 3 / SiO 2 , but has a structure in which each layer thickness is different.
  • the nitride semiconductor laser devices having the above-described configurations were compared by performing an aging test at an operating light output of 2 W and a case temperature of 60 ° C.
  • FIG. 13A examined the vicinity of the front end face using the sample after 300 hours aging test, and FIG. 13B used the sample after 900 hours aging test.
  • the thicknesses of the multilayer protective films on the front end face of the nitride semiconductor laser element of Comparative Example 3 shown in FIG. 13A are 30 nm for the AlN film 321, 45 nm for the Al 2 O 3 film 322, and 60 nm for the outermost SiO 2 film 323. It is.
  • the thicknesses of the multilayer protective films on the front end face of the nitride semiconductor laser device of Comparative Example 4 shown in FIG. 13B are set to be 10 nm for the AlN film 326 and thicker for the Al 2 O 3 film 327 as compared to Comparative Example 3. 110 nm.
  • the outermost SiO 2 film 328 is 15 nm. As shown in FIG.
  • FIGS. 13A and 13B it was found that the crystallization of the regions 325, 330, and 331 inside the Al 2 O 3 film was in progress.
  • Comparative Example 4 it was found that crystallization progressed in the region 330 on the AlN film side in the Al 2 O 3 film as compared with Comparative Example 3 shown in FIG. 13A. This result, by the Al 2 O 3 film is thickening, slow that external oxygen reaches the interface between the AlN film and the Al 2 O 3 film, previously the Al 2 O 3 film of the optical crystallization You can think it happened.
  • both the effect of suppressing the oxidation reaction of the AlN film of SiO 2 and the oxygen barrier property of crystallized Al 2 O 3 can be obtained.
  • the material of the metal oxide layer that suppresses oxygen diffusion will be described.
  • the effect of suppressing the diffusion of oxygen is caused by the metal oxide layer sandwiched between SiO 2 , and in particular, it is required to be a material whose film density is increased by photocrystallization caused by laser operation. Also, it is an essential condition for the end face protective film to be transparent to the oscillation wavelength of the laser.
  • the Al 2 O 3 film is used as the metal oxide in the embodiment according to the present invention.
  • the present invention is not limited to this, and an oxide film containing any one of zirconium, hafnium, titanium, tantalum, and zinc is used. I just need it.
  • metal elements can be easily produced using a solid target of ECR sputtering or magnetron reactive sputtering, and crystallization also proceeds easily.
  • zirconium oxide and titanium oxide are suitable as a metal oxide layer constituting the oxygen diffusion suppression layer because photocrystallization proceeds rapidly.
  • the metal oxide in the end face protective layer related to the nitride semiconductor laser device of the second embodiment is not necessarily limited to the Al 2 O 3 film, and any one of zirconium, hafnium, titanium, tantalum, and zinc is used. It may be an oxide film containing.
  • the refractive index of SiO 2 at a wavelength of 400nm near close to 1.4 and the refractive index of air (approximately 1.0), as the metal oxide layer Can use a larger refractive index than SiO 2 in the vicinity of a wavelength of 400 nm to obtain a higher reflectivity, reduce the number of layers constituting the oxygen diffusion suppression layer, and a nitride semiconductor laser device This is preferable because the yield can be improved.
  • the refractive index of a frequently used metal oxide layer is shown below.
  • the structure of the multilayer protective film on the front end face of the nitride semiconductor laser device according to the first embodiment is expressed by a four-layer structure of AlN / SiO 2 / Al 2 O 3 / SiO 2 from the light emitting end face side.
  • the nitride semiconductor laser device according to the second embodiment is expressed by a six-layer structure of AlN / Al 2 O 3 / AlN / SiO 2 / Al 2 O 3 / SiO 2 .
  • the difference between the first embodiment and the second embodiment is that the end face protective layer is changed from a structure of one AlN film to a three-layer structure of AlN / metal oxide film / AlN.
  • the AlN film 311 and the AlN film 313 have different crystallinity. This is because the AlN film 311 is formed on the end face (m-plane) of GaN, which is a crystal, and is a highly monocrystalline film mainly composed of m-axis orientation, whereas the AlN film 313 is amorphous. Since it is formed on a certain metal oxide film, it is a polycrystalline film mainly having c-axis orientation.
  • the AlN film 311 has a large crystal grain size, and the residual strain and stress inside the AlN film are large due to lattice mismatch with the m-plane of GaN, whereas the AlN film 313 is a polycrystalline film. The film stress is small. From these, it is possible to suppress film peeling due to crystallization of the Al 2 O 3 film by forming the end face protective layer into three layers. Further, the metal oxide film inside the end face protective layer is an AlN film 311 having a single crystallinity, and a dense crystal is formed by crystallization by photo-oxidation due to the substrate effect.
  • the AlN film 313 suppresses oxygen diffusion, crystallization of the Al 2 O 3 film inside the multilayer protective film on the front end face is further promoted.
  • the oxygen barrier property is increased in both the end face protective layer and the oxygen diffusion suppression layer, a highly reliable semiconductor laser can be realized even in a high output operation.
  • the thickness of the metal oxide film inside the end face protective layer is preferably thinner from the viewpoint of preventing film peeling.
  • the film thickness of the metal oxide film (Al 2 O 3 film) inside the end face protective layer of the nitride semiconductor laser device according to the second example was 10 nm.
  • the composition of the nitride semiconductor and the substrate to be used are not limited to those described above.
  • the substrate used is appropriately selected.
  • the center wavelength of the emitted light may be shorter than 390 nm or longer than 430 nm.
  • the thickness (remaining film thickness) of the side portion of the ridge waveguide 50a in the p-type cladding layer 18 is about 0.1 ⁇ m
  • the width of the lower portion of the ridge waveguide 50a is about 10 ⁇ m
  • the ridge The width of the upper portion of the waveguide 50a is about 8 ⁇ m, but this is not restrictive.
  • the width of the ridge waveguide may be 1 to 2 ⁇ m and may be used as a single mode laser.
  • the width of the ridge waveguide may be set between 2 and 100 ⁇ m depending on the light output used. .
  • an AlN film to which an impurity is added may be used as the film constituting the end face protective layer 31 or the end face protective layer 261.
  • Al (O) N to which a small amount of oxygen is added may be used.
  • an aluminum oxynitride film (AlON) may be used as the film constituting the end face protective layer 31 or the end face protective layer 261.
  • the aluminum oxynitride film is preferably a crystalline film, for example, a film mainly composed of m-axis orientation with respect to the light emitting end face.
  • the m-axis orientation is mainly used as the aluminum oxynitride film in contact with the nitride semiconductor layer constituting the semiconductor laser element. It is preferable to use a crystalline film and use a film mainly composed of c-axis as the aluminum oxynitride film in contact with the crystalline film mainly composed of m-axis orientation through a metal oxide film.
  • AlON film aluminum oxynitride film
  • a mixed gas of O 2 and N 2 is used as a reactive gas.
  • argon (Ar) gas is simultaneously introduced into the ECR chamber in order to control the deposition rate.
  • the flow rate of Ar is 20 ml / min
  • the flow rate of N 2 is 5.5 ml / min
  • the flow rate of O 2 Is changing.
  • the flow rate of each gas is in a standard state (0 ° C., 1 atm) (hereinafter the same).
  • AlON is produced when the flow rate of O 2 is changed from 0 ml / min to 1.0 ml / min.
  • the flow rate of each gas is an example and is not limited thereto.
  • FIG. 14 shows the relationship between the flow rate of O 2 during the formation of the AlON film and the elemental composition of AlON.
  • the atomic composition of N is defined as follows.
  • N atomic composition (%) (number of N atoms / sum of number of Al, N and O atoms) ⁇ 100
  • the gas flow rate at this time is 20 ml / min for Ar and 5.5 ml / min for N 2 .
  • FIG. 14 shows that the composition of N decreases and the composition of O increases as the flow rate of O 2 increases. Further, since Ar is used as the atmosphere gas for sputtering, some Ar is detected in the film. As the composition changes, the physical properties of AlON also change.
  • FIG. 15 shows the relationship between the refractive index and the O 2 flow rate for light having a wavelength ⁇ of 405 nm.
  • the refractive index of the AlN film not containing oxygen is about 2.1, and the refractive index of the Al 2 O 3 film not containing nitrogen is 1.65.
  • FIG. 15 shows that the refractive index of the AlON film gradually decreases from the refractive index close to AlN toward the refractive index close to Al 2 O 3 as the flow rate of O 2 increases.
  • FIG. 16 shows the relationship between the atomic composition of N and the refractive index (for light having a wavelength ⁇ of 405 nm) in the AlON film fabricated in this example.
  • the horizontal axis in FIG. 16 represents the atomic composition of nitrogen atoms contained in the AlON film in atomic%, and the vertical axis represents the refractive index.
  • the atomic composition of N is 0 atomic%, that is, Al 2 O 3
  • the atomic composition of N is 50 atomic%, that is, AlN.
  • the inventors of the present application have found that the refractive index is divided into three groups having different refractive indexes with respect to the atomic composition of N.
  • group A a group in which the atomic composition of N is 0 atomic% to 23 atomic% is called group A
  • a group in which the atomic composition of N is 24 atomic% to 40 atomic% is called group B
  • the atomic composition of N is 40 atoms.
  • % Or more groups are referred to as Group C.
  • the refractive index is about 2.0, which is almost the same as that of AlN.
  • FIG. 17 shows an X-ray diffraction spectrum of group C AlON having an atomic composition of N of 40% or more.
  • AlON in group A and group B is an amorphous film
  • AlON in group C is a crystalline film
  • the film constituting the end face protective layer 31 or the end face protective layer 261 is an AlON film having an atomic composition of N of 40% or more. It may be.
  • the oxide film inserted between the AlN film and the Al 2 O 3 film is a silicon oxide film, but may be replaced with another oxide film as long as the oxide film is not altered by laser light.
  • the silicon oxide film formed on the surface of Al 2 O 3 can be replaced with another oxide film.
  • the nitride semiconductor laser device according to the present invention can provide a protective film that does not peel off during laser oscillation and does not cause optical destruction as an end face protective film of the active layer. This is useful for a semiconductor laser device having a protective film for protecting the end face.
  • Nitride semiconductor laser device 11 n-type substrate 12 n-type semiconductor layer 13 n-type clad layer 14 n-type light guide layer 15 multiple quantum well active layer 16 p-type light guide layer 17 p-type electron block layer 18 p-type clad Layer 19 P-type contact layer 20 Mask layer 21 P-side electrode 22 N-side electrode 25 Multi-layer protective film on the rear end face 28 Front end face (light emitting end face) 29 Rear end face (rear end face) 30, 230 Multi-layer protective film on front end surface 31,261 End surface protective layer 32,232 Oxygen diffusion suppression layer 33 Protective film (AlN film) 34,234 Silicon oxide film (SiO 2 film) 35,235 Metal oxide film (Al 2 O 3 film) 36,236 Silicon oxide film (SiO 2 film) DESCRIPTION OF SYMBOLS 40 Laser bar sample 41 Target material 42 Plasma generation chamber 50 Semiconductor laminated body 51 Semiconductor laser apparatus 50a Ridge waveguide 52 Stem 52a Electrode terminal 52b Laser holding part

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Abstract

Cette invention concerne un élément laser fiable à semi-conducteur au nitrure, doté d'un film de protection de surface d'extrémité qui est résistant et qui n'est pas sujet au pelage, même au cours d'une opération sous laser. Ledit élément laser à semi-conducteur au nitrure est caractérisé en ce qu'il comprend : un corps semi-conducteur stratifié, constitué d'un semi-conducteur au nitrure du groupe III et présentant une surface d'extrémité électroluminescente ; et un film de protection constitué d'un film diélectrique multicouche formé de manière à couvrir la surface d'extrémité électroluminescente du corps semi-conducteur stratifié. Ledit élément laser à semi-conducteur au nitrure est en outre caractérisé en ce que : le film de protection est formé à partir de la couche de protection de surface d'extrémité et une couche d'arrêt de diffusion d'oxygène, ladite couche de protection de surface d'extrémité et ladite couche d'arrêt de diffusion d'oxygène étant disposées dans cet ordre à partir de la surface d'extrémité électroluminescente ; la couche de protection de surface d'extrémité est une couche contenant un film cristallin formée à partir d'un nitrure contenant de l'aluminium ; la couche d'arrêt de diffusion d'oxygène est une structure présentant un film d'oxyde métallique pris en sandwich entre deux films d'oxyde de silicium ; et le film d'oxyde métallique est cristallisé par lumière laser.
PCT/JP2013/005075 2012-12-19 2013-08-28 Élément laser à semi-conducteur au nitrure Ceased WO2014097508A1 (fr)

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JPWO2019159449A1 (ja) * 2018-02-14 2021-01-28 ヌヴォトンテクノロジージャパン株式会社 窒化物半導体レーザ素子及び照明光源モジュール
JPWO2021200328A1 (fr) * 2020-03-30 2021-10-07
JP2023005918A (ja) * 2021-06-29 2023-01-18 ヌヴォトンテクノロジージャパン株式会社 窒化物半導体発光素子

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