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WO2014086903A1 - Procédé de fabrication de nanostructures - Google Patents

Procédé de fabrication de nanostructures Download PDF

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Publication number
WO2014086903A1
WO2014086903A1 PCT/EP2013/075613 EP2013075613W WO2014086903A1 WO 2014086903 A1 WO2014086903 A1 WO 2014086903A1 EP 2013075613 W EP2013075613 W EP 2013075613W WO 2014086903 A1 WO2014086903 A1 WO 2014086903A1
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WO
WIPO (PCT)
Prior art keywords
coating
substrate
nanowires
structures
irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2013/075613
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German (de)
English (en)
Inventor
Oral Cenk Aktas
Alexander Udo May
Çagri Kaan AKKAN
Juseok Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leibniz Institut fuer Neue Materialien Gemeinnuetzige GmbH
Original Assignee
Leibniz Institut fuer Neue Materialien Gemeinnuetzige GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Publication of WO2014086903A1 publication Critical patent/WO2014086903A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00492—Processes for surface micromachining not provided for in groups B81C1/0046 - B81C1/00484
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0116—Thermal treatment for structural rearrangement of substrate atoms, e.g. for making buried cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/0143—Focussed beam, i.e. laser, ion or e-beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147—Film patterning
    • B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material

Definitions

  • the invention relates to a method for the simple production of nanostructures, in particular of detachable nanostructures.
  • Nanostructures in the form of wires, tubes or ribbons are the subject of intensive research because of their special properties.
  • Such nanostructures have unique electrical, electronic, thermoelectric, optical, magnetic and chemical properties.
  • Such nanostructures may also have a core-shell structure. This means that the nanostructures have a different composition on the outside than on the inside.
  • VLS Vapor Liquid Solid
  • nanowires which are arranged perpendicular to the surface. They are anchored in the upper ⁇ surface and thus have a chemical compound to the surface.
  • LIL laser interference lithography
  • a photoresist is applied to a surface and exposed with an interference pattern. Thereafter, the photoresist is developed and metallized. As a result, nanostructures with a very uniform structure can be produced.
  • Nanostructures on surfaces can also be created by laser ablation in combination with interference. In the process, material is selectively removed on the surfaces. When laser beams are used, high aspect ratio linear structures can also be obtained. However, these structural ⁇ tures no independent structures but structuring the respective surfaces. They can therefore be regarded more as a surface relief. They are not removable.
  • Another method for producing freestanding structures similar to the VLS method is a variant of laser ablation. In most cases, a high-energy laser pulse is absorbed by a surface in liquids. Here in ⁇ nerrenz the liquid a plasma. Together with the ablation of surface material, nano-scale structures can also be produced on the surface. In addition, nanostructures were generated by treating nanoparticles on surfaces.
  • a nanoscale structure is understood to mean a structure which has at least one structuring in a dimension below 1 ⁇ m. This can be for example a diameter or a distance between two structural elements. This definition can be transferred to arbitrary structures. Nets made of nanowires with a diameter of less than 1 ym are also nanoscale structures.
  • a nano-scale structure is also referred to as a one-dimensional nanostructure if it has a structure above the nanometer range in only one dimension.
  • nanowires have a diameter between 1 nm and 1 ⁇ m, preferably between 1 nm and 700 nm (measured with TEM), while at the same time they have a length of several micrometers.
  • nanostructures in particular one-dimensional nanostructures, in a simple manner.
  • the nanostructures should be removable.
  • the invention relates to a method for the production of nanoscale structures comprising the following steps: a) structured irradiation of a coated substrate, where ⁇ in the coating of the substrate has a thickness of less than 500 nm;
  • a coated substrate is irradiated be ⁇ .
  • a substrate which has Minim ⁇ least in a region of the irradiation a coating.
  • the coating may comprise a layer of a material. But they may also include multiple layers of differing ⁇ compatible materials. However, composite materials which differ from substances.
  • the substrate does not have to be completely coated .
  • the dimensions of the coating on the substrate can also determine the size of the nanostructure obtained.
  • the coating has a thickness of less than 500 nm. Preferred is a coating thickness of less than 300 nm, be ⁇ Sonders is preferably between 1 nm and 250 nm (measured by TEM).
  • the thickness of the coating which is ideal for structuring, may depend on the chosen conditions (wavelength of irradiation, intensity, structuring of the irradiation, conditions of the irradiation) and the structure to be produced.
  • the ideal thickness can be between 1 nm and 200 nm, preferably between 1 nm and 100 nm or between 10 nm and 100 nm. It may also be advantageous for certain structures if the coating has a certain minimum thickness. For example Minim ⁇ least 30 nm, preferably at least 50 nm; preferably between 50 nm and 250 nm, preferably between 70 nm and 100 nm. Likewise, for certain structures, a layer thickness between 1 nm and 70 nm may be advantageous.
  • the coating is designed so that at least a part and / or component of the coating absorbs the radiation used. This results in an energy transfer to the coating. This usually leads to thermal heating of the coating in the exposed areas.
  • a coating all suitable materials can be used. It may be organic, inorganic or hybrid materials. Hybrid materials are materials having organic and inorganic components in ⁇ play optionally organically modified inorganic networks, for example, sol-gel systems. As the inorganic coating, metals or semi-metals or compounds of metals or semi-metals may be used.
  • the metals or their compounds may be a metal of the 1st to 16th main group, for example Li, Sc, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re , Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Ga, In, Ti, Sn, Pb or Bi. It is also possible to use alloys of the metals. In the case of semi-metals, the coating may also comprise Si, Ge or Sb. It is also possible to use oxides of the abovementioned metals or semimetals.
  • the Be ⁇ coating can also be doped, to aim to ER certain effects.
  • the coating may also contain carbides, nitrides or carbonitrides of the elements Ti, Zr, Hf, Ga, Cr, Mo, W, V, Nb, Ta, Al, Si or mixtures thereof.
  • carbides such as SiC are preferred.
  • the coating may also comprise a semiconductor material.
  • a semiconductor material examples include CdSe, CdTe, CdS, PbSe, PbTe, PbS, InP, InAs, GaP, GaAs, ZnO, (ZnMg) O, Si or doped Si.
  • the coating may also have an optionally organically modified inorganic composite material.
  • hydrolysable compounds These are generally hydrolyzable compounds of Si, Al, Zr or Ti, such as halides or alkoxides.
  • the composite material should be organic modified, min ⁇ least used a compound which has at least one non-hydrolysable radical.
  • silanes which have at least one non-hydrolyzable radical. For this, preference is given to using alkylsilanes.
  • the coating may also include several different compounds, and for example consist of a metal and a Me ⁇ talloxid.
  • the coating may also contain precursors of the aforementioned metals, semimetals, metal compounds or semimetal compounds. These may be, for example, organometallic compounds, such as metal complexes, which decompose upon irradiation. Examples of such metal complexes are complexes with photochemically active ligands, such as phthalocyanines or bipyridines.
  • the coating may additionally contain nanoparticles of the metals, semimetals, metal compounds or semimetal compounds mentioned. These can for example be embedded in a matrix.
  • the matrix can be organic or inorganic.
  • the coating can also be converted into an inorganic material as mentioned above only under the action of irradiation.
  • the coating can be applied to the substrate by any method.
  • the method only needs to ermögli ⁇ Chen, prepare the coating with the required thickness.
  • Sputtering or PLD pulse laser deposition
  • PLD pulse laser deposition
  • CVD chemical or physical vapor deposition methods
  • the substrate below the coating is preferably designed such that it does not absorb the radiation and so ⁇ does not participate with in the formation of nanoscale structures. As a result, the structured irradiation leads to a change in the coating applied to the substrate.
  • the materials can be crystalline or amorphous. It can be metals, semi-metals, alloys, glasses or ceramics.
  • the substrate may be a metal oxide or semimetal oxide such as silica, alumina, magnesia or mica. It can also be another material.
  • It may be a metallic substrate such as aluminum, titanium, copper, steel, iron, silver, gold, nickel or alloys of these metals. It can be a ceramic substrate.
  • the substrate may be planar, allowing easier control of the exposure. But it can also be curved or even have a surface structure. Preferred is a planar substrate with a smooth surface.
  • the coating on the substrate is uniform so that uniform structures are obtained. This means that the coating has the same thickness in the exposed area.
  • the irradiation is structured accordingly.
  • This close sequence of exposed and unexposed areas of the coating has an important consequence.
  • the coating is locally heated at the exposed areas. This can also lead to detachment or ablation of the coating in these areas.
  • this heated / liquefied or ablated material leaves the exposed areas and cools again in the immediately adjacent unexposed areas, thereby forming the nanostructures on the surface. So there is a selective ablation and attachment. This process can also lead to chemical and / or structural changes of the material. Thus, new crystalline or amorphous phases can form.
  • nanostructures such as e.g. Core-shell structures are obtained. It can also lead to chemical changes, such as oxidation. This depends largely on the conditions of the exposure and the coating.
  • the formed structure on the surface of the substrate can form from the coating. If a substrate without coating is irradiated, Wür ⁇ merely form depressions in the surface, for example. B. by ablation. Since the warming can be very strong, the area changed by the exposure can be significantly larger than the actually exposed area.
  • the irradiation is periodically structured in at least one direction.
  • periodicity is to be understood in principle that the intensity of the irradiation with respect to the surface changes in this direction in a regularly repeating manner.
  • the distances Zvi ⁇ rule the same intensity the areas are constant or follow a certain regularity.
  • areas of maximum intensity (A) follow areas of minimal intensity (B). This leads to a radiation pattern
  • ABABABABABAB in which exposed areas (A) and unexposed areas (B) alternate at regular intervals.
  • the exposure is spatially modulated in intensity.
  • the periodic sequence of irradiation also includes the nanostructure obtained in this case, a corresponding structural ⁇ tur on. It can therefore be formed linear or reticulate.
  • the irradiation is preferably at least ei ⁇ NEN laser beam, in particular by at least a spatially domestic tensticiansmodul mandat laser beam.
  • the irradiation is preferably carried out in pulses, this means that irradiation is not continuous, but the coating is irradiated with at least one light pulse.
  • the energy transferred to the coating can be controlled very accurately.
  • the short exposure time prevents the single pulses a heavy load of the substrate under the coating. It can thereby be achieved that only the coating is detected by the action of the exposure and the underlying substrate is only slightly affected.
  • the length of the exposure or of the pulses and their number depend on the irradiated coating.
  • a pulse can in this case have a length of 0.5 ns to 1000 ns aufwei ⁇ sen.
  • the pulse length is preferably between 0.5 ns and 500 ns, particularly preferably between 1 and 100 ns.
  • the number of pulses used depends on the conditions of the process (coating, thickness of the coating, laser power, etc.). It can be determined by the skilled person by simple experiments.
  • the formed nanoscale structures are preferably formed parallel to the surface of the substrate. They are preferably formed along the coating. The structures formed are therefore oriented parallel to the surface.
  • the resulting structures are removable from the surface. This means that they have no chemical connection with the surface, but only rest on it. This is an important one
  • the nanowires be perpendicular to the surface wake ⁇ sen, or the structures in relief of the surface. As a result, the nanostructures obtained can easily be further processed.
  • the structured irradiation is obtained by the interference of at least two laser beams. This means that an interference pattern of at least two laser beams is used for the irradiation .
  • an interference pattern of two laser beams is used. This forms a standing light wave. This is characterized by a band-shaped sequence of exposed and unexposed areas.
  • nanowires can therefore be obtained along the unexposed areas.
  • the width of the areas the thickness of the receive ⁇ NEN nanowires provides Lucas- example by the angle of the two La ⁇ serstrahlen with which these strike the substrate.
  • the periodicity of the interference pattern ie the distance between two exposed areas, is less than 5 ⁇ m, particularly preferably between 50 nm and 2 ⁇ m.
  • the wavelength, energy density or energy of the irradiation depends above all on the nanostructure to be obtained and on the coating used.
  • Thicker coatings require more transferred energy to form the nanostructure. If the energy transferred is too low, it can only cause cracking in the surface. If the transferred energy is too high, evaporation of the coating may occur.
  • the ideal values for a specific coating can be determined by a person skilled in the art by simple tests.
  • the wavelength also depends on the type of Bestrah ⁇ lung and the coating. In the case of interference, the wavelength determines the obtained interference pattern.
  • All types of radiation sources can be used.
  • lasers in particular Nd: YAG laser or C02 laser, preferably a pulsed laser.
  • the power of the laser is there ⁇ to adapt to the coating. It can for example be between 0.5 W and 3 W.
  • the nanostructures obtained by such irradiation are characterized by a particularly high aspect ratio (length to diameter). Thus nodrähte than 500 ym (500000 nm) in length are obtained (ge ⁇ measured with SEM) at thicknesses below 300 nm Na. This corresponds to an aspect ratio (length: diameter) of over 1500: 1.
  • the structures obtained in this case have an aspect ratio of preferably from about 20: 1 before Trains t ⁇ about 100: 1, preferably about 200: 1, preferably about 500: 1, preferably about 1000: 1, preferably about 2000: 1, more forthcoming gives over 3000: 1 on.
  • the nanowires preferably have at least 40%, more preferably at least 60% of the nanowires As this ⁇ pektrise on.
  • the nanowires preferably have the aspect ratios mentioned above without regard to their crosslinking.
  • the aspect ratio preferably refers to the Aspektver ⁇ ratio, which means can be measured from the possible detachment from the surface, with SEM after manufacture.
  • the exposure can be carried out under vacuum, in an atmosphere or in liquid.
  • the exposure is carried out under normal pressure and air.
  • Exposure under a certain gas atmosphere may also be performed, e.g. Argon, nitrogen.
  • the thickness of the coating can also affect the structure obtained. Since the material of the coating is removed locally and forms the subsequent nanostructure, the thickness of the coating also determines how much material to Ausbil ⁇ extension of the structure is available. This can lead to thicker layers forming further structural features. In this respect, the subsequent structure can also be controlled via the thickness of the coating. In the case of linear nanowires, as obtained by the above-described interference of two laser beams, a thicker coating (eg, above 70 nm) results in the formation of crosslinks between the obtained ones with the same laser power
  • the process according to the invention opens up a large number of possible variations and possibilities for controlling the composition and structure of the structures obtained.
  • different structures can form such as core-shell structures. This can be facilitated by the fact that the coating consists of a compound of at least two constituents, which segregate under the thermal effect in the formation of the nanostructures or convert into two different compounds. This can also be a selective enrichment or oxidation.
  • the coating is composed of at least two layers. From such a coating, a nanostructure can be obtained which, like the starting coating, contains different layers. In the case of nanowires, the lowermost layer of the coating forms the outermost layer of the nanowire produced. In this way, multicomponent nanostructures, in particular nanowires, can be produced in a simple manner.
  • the substrate may have different coatings in different areas.
  • nanostructures which consist of other materials in certain areas.
  • nanowires may have limited regions that are not conductive, for example.
  • the exposure can also be limited to certain areas of the substrate by the use of masks.
  • the process according to the invention has the particular advantage that it enables the production of nano-scale structures in only two process steps (coating of a substrate, exposure).
  • the process according to the invention is preferably carried out without catalysts or crystallization nuclei. Also, no starting materials need to be added to make the structures.
  • the invention also relates to a nano-scale structure wel ⁇ che particular process of the invention was obtained, and is not connected on a substrate and comprises Nanodräh ⁇ te and / or crosslinked nanowires.
  • the nanowires have a diameter between 10 nm and 10 ⁇ m, preferably between 10 nm and 5 ⁇ m.
  • the nanowires may also have a diameter between 100 nm and 700 nm or 200 nm and 700 nm.
  • nanowires can also be networked together. This means that there are locally limited links between at least two nanowires. This leads to a network of nanowires.
  • the aspect ratio of the nanowires is preferably above 20: 1, preferably above 100: 1, preferably above 500: 1, preferably above 1000: 1, preferably above 2000: 1, particularly preferably above 3000: 1.
  • the nanowires may also have an aspect ratio of over 1500: 1.
  • the crosslinked nanowires, without their crosslinking, preferably have the above-mentioned aspect ratios on. In this case preferably have at least 40%, particularly before ⁇ Trains t least 60% of the nanowires of this aspect ratio.
  • the aspect ratio preferably refers to the Aspektver ⁇ ratio, which means can be measured from the possible detachment from the surface, with SEM after manufacture.
  • the structures according to the invention are suitable for many applications, in particular for optical and electrical applications or for materials and sensors.
  • the resulting nanoscale structures can be applied, for example, to substrates in order to increase their surface area.
  • the structures obtained can also be combined with other materials, for example by incorporation in an organic, inorganic or hybrid matrix.
  • composite materials can be produced.
  • the optical or electrical properties of such a composite material can be changed by the nanoscale structures. Examples of optical applications are polarizers, light ⁇ conductors, absorbers, filters or diffractors.
  • Examples of electrical applications are electrodes Batte ⁇ rien, batteries, capacitors, diodes, photovoltaic, solar larzellen and sensors.
  • Fig. 2 Produced one-dimensional nanostructures of Figure 1 in 5000x magnification (SEM recording).
  • Fig. 3 One-dimensional nanostructures such as Fig 1 with Periodi ⁇ capacity: 1 ym (by changing the interference angle of the two laser beams);
  • Nanostructure made of SiC
  • Parameters as in Fig.3 Core: EELS measuring range in the core
  • Shell EELS measurement area in the shell of the structures
  • FIG. 4B EELS measurement of the structure of Fig. 4A;
  • FIG. 6 SEM image of a netlike nanostructure; FIG. Edge area of a sample with 1 ym periodicity;
  • FIG. 10 Schematic representation of the size adjustment of the nanostructures
  • FIG. 11 Schematic representation of the production of nanostructures by interference of two laser beams
  • FIG. 12 Schematic representation for the production of nanowires made of different materials.
  • FIGS. 1 and 2 show a detail of a surface with nanowires produced from a coating with a thickness of approximately 30 nm in different magnifications.
  • the parallel alignment of the nanowires is clearly recognizable.
  • the nanowires are only on the surface. Nevertheless admirre ⁇ they CKEN over the entire frame. They therefore have a length of at least 250 ym with diameters of less than 300 nm.
  • Fig. 3 shows nanowires with higher diameter compared to Fig. 1. This was called ⁇ ranges by changing the interference pattern.
  • the nanowires can be detached from the substrate.
  • Fig. 4A shows a TEM photograph in cross section of Herge ⁇ presented nanowire of Example 1. Here is clearly formed on the outside of the nanowires other structure to ER- which forms a shell with a thickness of 10 nm. The nanowires obtained show a core-shell structure.
  • FIG. 4B shows an EELS measurement (Electron Energy-Loss
  • Fig. 4A Spectroscopy; Electron energy loss spectroscopy) of the nanowire of Fig. 4A.
  • the peak for Si for the measurement in the core and the peak for C for the measurement in the shell are clearly visible.
  • the number of detections of the photodiode is plotted on the Y axis.
  • the measurement shows that the carbon in the shell is very highly enriched, while the core has mainly Si on ⁇ . This confirms the core-shell structure of the obtained nanowires.
  • Fig. 5 shows nanowires which have been peeled off the surface by light scraping. Due to the mechanical loading ⁇ utilization are some slightly shortened. This can be avoided by ent ⁇ speaking techniques during detachment. Some of the nanowires shown still have a length of more than 500 ym with a diameter of about 300 nm.
  • Figs. 6, 7 and 8 show netlike nanostructures. It is interpreting ⁇ Lich to recognize that these structures can be detached from the substrate. The structures were obtained at the edge of the sample where the coating was slightly thicker.
  • the coating on the substrate S contains the constituents A and B. These may, for example, be present in a mixture or else be present as constituents of a chemical compound or alloy AB (for example SiC). Due to the structured ment, in this case with an interference pattern, the material is heated strongly and the detached coating solidifies in the nanowire shown. The thermal effect leads to structural changes in the material. In the process, component A accumulates in the outer region of the nanowire, while component B forms the core of the nanowire.
  • constituents A and B may, for example, be present in a mixture or else be present as constituents of a chemical compound or alloy AB (for example SiC). Due to the structured ment, in this case with an interference pattern, the material is heated strongly and the detached coating solidifies in the nanowire shown. The thermal effect leads to structural changes in the material. In the process, component A accumulates in the outer region of the nanowire, while component B forms the core of the nanowire.
  • FIG. 9 shows the analogous production of a multilayer nanowire.
  • several layers (A, B, C) are applied to the substrate S for this purpose.
  • the structured irradiation forms a nanowire, which represents the order of the layers from the inside to the outside.
  • the order of layers may also change. It can also lead to further transformations of the layers.
  • FIG. 10 shows by way of example how the intensity distribution (101) of the irradiation can control the thickness of the obtained nanowires.
  • a coating of SiC is irradiated with a Interferenzmus ⁇ ter having a distance of the intensity of p.
  • nanowires of thickness d are formed, which is proportional to the distance p. Due to the use of SiC additionally forms a core-shell structure with an accumulation of C as a shell and Si as the core.
  • Fig. 11 is a schematic representation for producing an interference pattern of 2 laser beams (201, 202) ge ⁇ shows. These meet the substrate S, which is coated with the coating ⁇ (203). Both laser beams hit the surface at a certain angle. If appropriate Phase shift between the two laser beams due to different distances leads to interference and to the formation of an intensity distribution (205) on the surface. Through the angle ⁇ , the distance P of the Intensi ⁇ tuschsver Alexandr thereby can be controlled.
  • FIG. 12 shows a further embodiment of the invention.
  • a substrate (301) in various preparation ⁇ surfaces with different materials (303, 305) is coated.
  • the sequence of the coatings (303, 305) is also found in the nanowires produced. In this way, nanowires can be obtained, which consist of sections of different materials.

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Abstract

L'invention concerne un procédé de fabrication simple de nanostructures. Celle-ci est obtenue par irradiation structurée d'un substrat revêtu présentant un revêtement ayant une épaisseur inférieure à 500 nm. L'irradiation structurée provoque la formation de nanostructures pouvant également être détachées du substrat.
PCT/EP2013/075613 2012-12-05 2013-12-05 Procédé de fabrication de nanostructures Ceased WO2014086903A1 (fr)

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DE201210111807 DE102012111807A1 (de) 2012-12-05 2012-12-05 Verfahren zur Herstellung von Nanostrukturen

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