WO2014086050A1 - Broken line repair method, broken line repair structure, and broken line repair system - Google Patents

Abstract

Provided are a broken line repair method, a broken line repair structure, and a broken line repair system. The broken line repair method comprises the steps of: forming a first repair line (23) for connecting two ends of a broken line of a scan line (21); forming an insulating layer (25) covering the first repair line (23); and forming a second repair line (24) for connecting two ends of a broken line of a data line (22), wherein the insulating layer (25) is provided at an intersection of the second repair line (24) and the first repair line (23). By isolating the first repair line (23) and the second repair line (24) with the insulating layer (25), short circuit is effectively prevented from occurring at the intersection of the broken lines of the scan line (21) and the data line (22), simultaneous repair of the broken lines at the intersection of two metal layers is realized, and the broken line repair yield is improved.

Description

 Wire break repair method, wire break repair structure and wire break repair system

Technical field

The invention relates to the field of liquid crystal display, in particular to a wire break repairing method, a wire break repairing structure and a wire break repairing system of a liquid crystal panel.

Background technique

TFT-LCD (Thin Film Transistor Liquid Crystal Display, thin film transistor liquid crystal display) is widely used in various large, medium and small products due to its thin size, light weight, excellent picture quality, low power consumption, long life, digitization and no radiation. The main electronic products of today's information society, such as television, computer, mobile phone, GPS (Global Positioning System), car display, public display, etc.

TFT-LCD is a combination of semiconductor technology and liquid crystal display technology. The fabrication of TFT arrays is the most difficult part of the entire TFT-LCD manufacturing process. The TFT array process includes forming a scan line, an insulating layer, a semiconductor layer, a data line, a transparent electrode layer, and the like. In the TFT array process, as shown in FIGS. 1a to 1c, after the data line 12 is formed, if the impurity 13 remains When the intersection of the scanning line 11 and the data line 12 (as shown in FIG. 1a), the impurity 13 needs to be removed, and a method of laser irradiation of the impurity 13 to remove the impurity 13 is usually employed. However, while the laser irradiation removes the impurities 13, the laser breaks other places where it is irradiated, such as the scanning line 11, the data line 12, and the like, and the impurity 13 is located at the intersection of the scanning line 11 and the data line 12, thereby removing impurities 13 At the same time, the laser inevitably breaks the scan line 11 and the data line 12 (as shown in FIG. 1b); at the same time, other reasons may cause a disconnection at the intersection of the scan line 11 and the data line 12.

In order to improve the display effect of the TFT-LCD, the disconnection at the intersection of the scan line 11 and the data line 12 is generally repaired. If the plating line is directly repaired at the intersection of the scan line 11 and the data line 12, the repair line 14 of the scan line 11 is directly in contact with the repair line 15 of the data line, and the scan line 11 is short-circuited with the data line 12 (eg, FIG. 1c), thereby affecting the display of the pixel area corresponding to the scan line 11 and the data line 12. Therefore, in the prior art, the disconnection at the intersection of the scan line 11 and the data line 12 can only be repaired after the TFT array process is completed, but the repair process after the TFT array process is completed is complicated, and the data line is formed. The post-12 process may also cause the disconnection at the intersection of the scan line 11 and the data line 12 to be unrepairable.

Therefore, how to repair the disconnection at the intersection of the scan line 11 and the data line 12 becomes one of the problems to be solved in the TFT array process.

Summary of the invention

The main object of the present invention is to provide a wire break repairing method, a wire break repairing structure and a wire break repairing system which improve the repair rate of broken wires.

The invention provides a wire repairing method, comprising the steps of:

Forming a first repair line connecting the ends of the broken line of the scan line;

Forming an insulating layer covering the first repairing line;

A second repairing line connecting both ends of the broken line of the data line is formed, and the insulating layer is provided at an intersection of the second repairing line and the first repairing line.

Preferably, the step of forming the insulating layer covering the first repairing line comprises:

An insulating layer partially covering the first repair line is formed.

Preferably, the step of forming the insulating layer covering the first repairing line comprises:

Presetting the formation position of the second repairing line;

Determining an intersection position of the first repairing line and the second repairing line according to the formed position of the second repairing line;

An insulating layer covering the intersection position is formed at an intersection of the first repair line and the second repair line.

Preferably, the step of forming the insulating layer covering the first repairing line comprises:

Coating an insulating film layer;

The insulating film layer is subjected to photoresisting, exposure, development, etching, and photoresist removal processes to form the insulating layer.

Preferably, after the step of forming the insulating layer covering the first repairing line, the method further comprises:

The insulating layer is cured.

Preferably, the step of curing the insulating layer is specifically:

The insulating layer is baked or the insulating layer is irradiated with ultraviolet light.

Preferably, the step of forming the insulating layer covering the first repairing line comprises:

An insulating layer covering the entire first repair line is formed.

The present invention also provides a wire break repair structure for repairing a broken line at the intersection of a scan line and a data line in a TFT array substrate, including a first repair line connecting the ends of the broken line of the scan line, and two broken connection data lines. a second repair line at the end and an insulating layer disposed at the intersection of the first repair line and the second repair line.

Preferably, the insulating layer covers the entire first repair line.

Preferably, the insulating layer covers a portion of the first repair line.

The invention also provides a wire break repair system, comprising:

a plating line device for forming a first repairing line connecting the two ends of the broken line of the scan line and a second repairing line connecting the two ends of the broken line of the data line;

An insulating layer forming device for forming an insulating layer covering the first repairing line.

Preferably, the insulating layer forming device specifically includes:

a coating positioning module, configured to pre-set a forming position of the second repairing line; determining an intersection position of the first repairing line and the second repairing line according to the formed position of the second repairing line;

And a coating module, configured to form an insulating layer covering the intersection position at an intersection of the first repairing line and the second repairing line.

Preferably, the coating module specifically includes:

a coating unit for coating an insulating film layer;

And a molding unit for coating the insulating film layer with a photoresist, exposing, developing, etching, and photoresist removing process to form the insulating layer.

Preferably, the coating module specifically includes:

a curing unit for curing the insulating layer.

Preferably, the curing unit is a baking machine or an ultraviolet illuminator.

Preferably, the insulating layer forming device is specifically configured to form an insulating layer partially covering the first repairing line.

Preferably, the insulating layer forming device is specifically configured to form an insulating layer covering the entire first repairing line.

The invention separates the insulating layer between the repaired first repairing line and the second repairing line, thereby effectively avoiding a short circuit at the intersection of the scanning line and the data line breaking line, thereby realizing repairing the disconnection of the intersection of the two metal layers at the same time, and Improve the repair rate of wire break repair.

DRAWINGS

1a is a schematic view showing the presence of impurities at intersections of scan lines and data lines in the prior art;

1b is a schematic structural view of a scan line and a data line after laser removing impurities in the prior art;

1c is a schematic structural view showing a short circuit caused by plating repair at the intersection of a scan line and a data line in the prior art;

2 is a flow chart of an embodiment of a method for repairing a broken wire according to the present invention;

3 is a flow chart of a second embodiment of a method for repairing a broken wire according to the present invention;

4 is a schematic structural view of coating a first repairing line in an embodiment of the present invention;

FIG. 5 is a schematic structural view of a coating insulating layer according to an embodiment of the present invention; FIG.

6 is a schematic structural diagram of an interrupt line repairing structure according to an embodiment of the present invention;

FIG. 7 is a schematic structural diagram of an interrupt line repairing system according to an embodiment of the present invention.

The implementation, functional features, and advantages of the present invention will be further described in conjunction with the embodiments.

detailed description

It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

As shown in FIG. 2, FIG. 2 is a flowchart of an embodiment of a disconnection repairing method according to the present invention. The disconnection repairing method of the embodiment is used for repairing the disconnection at the intersection of the scan line and the data line in the TFT array substrate, and the method for repairing the disconnection includes:

In step S11, a first repairing line is formed, and two ends of the first repairing line are respectively connected to two ends of the broken line of the scanning line;

Referring to FIG. 4 together, impurities appear at the intersection of the scanning line 21 and the data line 22, and the impurities are removed by laser irradiation to cause the scanning line 21 and the data line 22 to be broken, or the scanning line 21 and the data line 22 are caused by other reasons. A broken line occurs at the intersection, and the scanning line 21 and the data line 22 need to be coated and repaired. In this embodiment, the first repairing line 23 is preferentially applied, so that both ends of the first repairing line 23 are connected to two break points at the broken line of the scanning line 21, and the scanning line 21 is turned on to repair the scanning line 21. .

In step S12, an insulating layer is formed on the first repair line.

An insulating layer 25 is coated on the first repairing line 23, and the insulating layer 25 may cover the entire first repairing line 23, or the insulating layer 25 covers only a portion of the first repairing line 23, as shown in FIG.

In this step, the insulating film is first coated, and then subjected to a photoresist, exposure, etching, photoresist removal process, etc., so that the insulating layer 25 covers the first repairing line 23. Of course, in other embodiments, the insulating layer 25 may also be coated only on the first repairing line 23.

In step S13, a second repairing line is formed, and two ends of the second repairing line are respectively connected to both ends of the broken line of the data line.

Referring to FIG. 6 together, a second repair 24 is formed. Both ends of the second repairing line 24 are respectively connected to both ends of the disconnection of the data line 22, so that the data line 22 is turned on to repair the data line 22. An insulating layer 25 is provided at the intersection of the second repairing line 24 and the first repairing line 23. When the second repairing line 24 has the insulating layer 25, the second repairing line 24 is not in contact with the first repairing line 23, and the repaired first repairing line 23 and the second repairing line 24 can be effectively prevented from being short-circuited. .

In step S12, if the insulating layer 25 is formed to cover only a portion of the first repairing line 23, in this step, the intersection of the second repairing line 24 and the first repairing line 23 is an insulating layer 25 covering the first repairing line 23 s position. Of course, in step S12, the formation position of the second repairing line 24 may be set in advance, and then the intersection of the second repairing line 24 and the first repairing line 23 may be determined according to the position of the second repairing line 24 provided, and An insulating layer 25 is formed at the intersection.

In this embodiment, by isolating the insulating layer 25 between the repaired first repairing line 23 and the second repairing line 24, the short circuit at the intersection of the scanning line 21 and the data line 22 is effectively avoided, and the intersection of the two metal layers is simultaneously repaired. Broken wire improves the repair rate of wire break repair.

As shown in FIG. 3, FIG. 3 is a flow chart of a second embodiment of a method for repairing a TFT coating film according to the present invention. This embodiment adds the step of curing the insulating layer on the basis of the embodiment shown in FIG. 2.

Step S21, forming a first repairing line connecting the two ends of the broken line of the scan line;

Step S22, forming an insulating layer covering the first repairing line;

Step S23, curing the insulating layer;

Referring to FIG. 5 together, after the insulating layer 25 is applied, the insulating layer 25 may be cured for the insulating layer 25 of the material that needs to be cured. Depending on the material of the insulating layer 25, baking or ultraviolet light irradiation may be employed. After the insulating layer 25 is cured, the insulating layer 25 can be effectively prevented from falling off during the post-process, and the short-circuiting of the scan line 21 and the data line 22 due to the falling off thereof is further prevented.

Step S24, forming a second repairing line connecting the two ends of the broken line of the data line, and having an insulating layer at the intersection of the second repairing line and the first repairing line.

In this embodiment, the insulating layer 25 is isolated between the repaired first repairing line 23 and the second repairing line 24, and the coating insulating layer 25 is cured by baking or ultraviolet light irradiation to avoid the insulating layer 25 from following. The falling off during the process further prevents the repaired first repairing line 23 and the second repairing line 24 from being short-circuited at the intersection, thereby improving the repair rate of the broken wire.

The present invention also provides a wire break repair structure, as shown in FIG. 6, which is a schematic view of a repair structure in an embodiment of the present invention.

In this embodiment, the disconnection repair is performed by using the method of the above embodiment, and the broken repair structure is used for repairing the disconnection at the intersection of the scan line and the data line in the TFT array substrate, including the first repair line 23 and the second repair line. 24 and the insulating layer 25, the first repairing line 23 is connected to both ends of the broken line of the scanning line 21, the second repairing line 24 is at both ends of the broken line connecting the data line 22, and the insulating layer 25 is disposed at the first repairing line 23 and the Between the two repair lines 24, the insulating layer 25 may cover the entire first repair line 23, or the insulating layer 25 covers only a portion of the first repair line 23, which may be only on the first repair line 23 and the second repair line 24. An insulating layer 25 is provided at the intersection.

In this embodiment, the insulating layer 25 is isolated between the repaired first repairing line 23 and the second repairing line 24, so that the scanning line 21 and the data line 22 are repaired without short circuit, and the two metal layers can be repaired at the same time. , improved the repair rate of broken wires and reduced the production cost.

The present invention also provides a disconnection repair system. As shown in FIG. 7, FIG. 7 is a schematic structural diagram of an interrupt line repair system according to an embodiment of the present invention. The disconnection repair system includes:

a plating line device 100 for forming a first repairing line connecting the two ends of the broken line of the scan line and a second repairing line connecting the two ends of the broken line of the data line;

The insulating layer forming device 200 is configured to form an insulating layer covering the first repairing line. The insulating layer may cover the entire first repairing line, or may cover a portion of the first repairing line, so that the insulating layer covers the intersection of the second repairing line and the first repairing line.

The insulating layer forming device 200 specifically includes:

a coating positioning module 210, configured to preset a forming position of the second repairing line; and determining an intersection position of the first repairing line and the second repairing line according to the formed position of the second repairing line;

The coating module 220 is configured to form an insulating layer covering the intersection position at an intersection of the first repairing line and the second repairing line.

The coating module 220 specifically includes:

a coating unit 221 for coating an insulating film layer;

The molding unit 222 is configured to perform photoresisting, exposure, development, etching, and photoresist removal processes on the insulating film layer to form the insulating layer.

The coating module 220 may further include:

A curing unit 223 for curing the insulating layer. The curing unit 223 may be a baking machine or an ultraviolet illuminator.

For the specific working principle of the embodiment, reference may be made to all the technical solutions in the foregoing embodiments shown in FIG. 2 to FIG. 6 , and no further description is made herein. Since the wire break repair system of the embodiment is adopted, the scan lines and the data lines are effectively avoided. A short circuit occurs at the intersection of the broken wires, which simultaneously repairs the disconnection at the intersection of the two metal layers, and improves the repair rate of the broken wires.

The above is only the preferred embodiment of the present invention, and is not intended to limit the scope of the invention, and the equivalent structure or equivalent process transformations made by the description of the invention and the drawings are directly or indirectly applied to other related The technical field is equally included in the scope of patent protection of the present invention.

Claims (17)

 A wire break repairing method, comprising the steps of: Forming a first repair line connecting the ends of the broken line of the scan line; Forming an insulating layer covering the first repairing line; A second repairing line connecting both ends of the broken line of the data line is formed, and the insulating layer is provided at an intersection of the second repairing line and the first repairing line. The method of repairing the wire breakage according to claim 1, wherein the step of forming the insulating layer covering the first repairing line comprises: An insulating layer partially covering the first repair line is formed. The method of repairing the wire breakage according to claim 1, wherein the step of forming the insulating layer covering the first repairing line comprises: Presetting the formation position of the second repairing line; Determining an intersection position of the first repairing line and the second repairing line according to the formed position of the second repairing line; An insulating layer covering the intersection position is formed at an intersection of the first repair line and the second repair line. The method of repairing the wire breakage according to claim 1, wherein the step of forming the insulating layer covering the first repairing line comprises: Coating an insulating film layer; The insulating film layer is subjected to photoresisting, exposure, development, etching, and photoresist removal processes to form the insulating layer. The wire break repairing method according to claim 1, wherein the step of forming the insulating layer covering the first repairing line further comprises: The insulating layer is cured. The wire break repairing method according to claim 5, wherein the step of curing the insulating layer is specifically: The insulating layer is baked or the insulating layer is irradiated with ultraviolet light. The method of repairing the wire breakage according to claim 1, wherein the step of forming the insulating layer covering the first repairing line comprises: An insulating layer covering the entire first repair line is formed. A wire break repair structure for repairing a wire break at a intersection of a scan line and a data line in a TFT array substrate, characterized in that the first repair line and the connection data line break line at both ends of the disconnection line connecting the scan lines are included a second repair line at the end and an insulating layer disposed at the intersection of the first repair line and the second repair line. The wire break repair structure according to claim 8, wherein the insulating layer covers the entire first repair line. The wire break repair structure according to claim 8, wherein the insulating layer covers a portion of the first repair line. A wire break repairing system, comprising: a plating line device for forming a first repairing line connecting the two ends of the broken line of the scan line and a second repairing line connecting the two ends of the broken line of the data line; An insulating layer forming device for forming an insulating layer covering the first repairing line. The wire break repairing system according to claim 11, wherein the insulating layer forming device comprises: a coating positioning module, configured to pre-set a forming position of the second repairing line; determining an intersection position of the first repairing line and the second repairing line according to the formed position of the second repairing line; And a coating module, configured to form an insulating layer covering the intersection position at an intersection of the first repairing line and the second repairing line. The wire-breaking repairing system according to claim 12, wherein the coating module comprises: a coating unit for coating an insulating film layer; And a molding unit for coating the insulating film layer with a photoresist, exposing, developing, etching, and photoresist removing process to form the insulating layer. The wire break repairing system according to claim 12, wherein the coating module further comprises: a curing unit for curing the insulating layer. The wire break repair system according to claim 14, wherein the curing unit is a baking machine or an ultraviolet illuminator. The wire break repairing system according to claim 11, wherein the insulating layer forming device is specifically configured to form an insulating layer partially covering the first repairing line. The wire break repairing system according to claim 11, wherein the insulating layer forming device is specifically configured to form an insulating layer covering the entire first repairing line.

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