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WO2014077631A1 - Dispositif d'éclairage à del - Google Patents

Dispositif d'éclairage à del Download PDF

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Publication number
WO2014077631A1
WO2014077631A1 PCT/KR2013/010422 KR2013010422W WO2014077631A1 WO 2014077631 A1 WO2014077631 A1 WO 2014077631A1 KR 2013010422 W KR2013010422 W KR 2013010422W WO 2014077631 A1 WO2014077631 A1 WO 2014077631A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
heat dissipation
led
led chip
lighting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2013/010422
Other languages
English (en)
Korean (ko)
Inventor
박병규
박재현
이종국
서일경
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Semiconductor Co Ltd
Original Assignee
Seoul Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020120130629A external-priority patent/KR20140063922A/ko
Priority claimed from KR1020120131752A external-priority patent/KR20140070710A/ko
Application filed by Seoul Semiconductor Co Ltd filed Critical Seoul Semiconductor Co Ltd
Publication of WO2014077631A1 publication Critical patent/WO2014077631A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/27—Retrofit light sources for lighting devices with two fittings for each light source, e.g. for substitution of fluorescent tubes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • F21V19/003—Fastening of light source holders, e.g. of circuit boards or substrates holding light sources
    • F21V19/0045—Fastening of light source holders, e.g. of circuit boards or substrates holding light sources by tongue and groove connections, e.g. dovetail interlocking means fixed by sliding
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
    • F21V29/507—Cooling arrangements characterised by the adaptation for cooling of specific components of means for protecting lighting devices from damage, e.g. housings
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2103/00—Elongate light sources, e.g. fluorescent tubes
    • F21Y2103/10—Elongate light sources, e.g. fluorescent tubes comprising a linear array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]

Definitions

  • the present invention relates to an LED lighting device that can replace a fluorescent lamp, and more particularly, to an LED lighting device having excellent light uniformity while applying a smaller number of LED packages than conventional fluorescent lighting LED lighting devices. will be.
  • a fluorescent lamp is a lighting device that converts electrical energy into light energy and provides light to identify an object indoors or outdoors at night.
  • fluorescent lamps have a larger energy consumption than LEDs, and have a short lifespan, so the amount of light rapidly decreases over time, and thus periodic management is required.
  • fluorescent lamps may cause environmental pollution due to mercury that may occur when discarding them.
  • an LED lighting device having a light emitting diode (LED) which has a semi-permanent life, low power consumption, and high efficiency illuminance can be obtained. Is being developed. This LED lighting device is expected to replace the existing fluorescent lamps.
  • LED light emitting diode
  • FIG 1 schematically shows a cross section of a conventional fluorescent lamp type LED lighting device.
  • the conventional fluorescent type LED lighting device 10 is disposed in the housing 20, the housing 20 of the long cylindrical shape similar to the appearance of the conventional fluorescent lamp, the plurality of LED package 30 is It includes a printed circuit board (PCB) 40 mounted in an array form.
  • the LED package 30 is mounted on the PCB 40 using Surface Mounting Technology (SMT) using screen printing and reflow.
  • SMT Surface Mounting Technology
  • the LED chip 31 is disposed in the LED chip receiving portion 33 above the package body 32, and is surrounded by the reflector 34 formed along the circumference of the package body 32.
  • the part 33 is molded with the sealing material 35 which mixed resin, such as silicone, and fluorescent substance.
  • the diameter and length, such as the diameter and length should be the same as the existing fluorescent lamp in order to be installed directly in the installation position of the existing fluorescent lamp without a separate replacement. Accordingly, the spacing between the LED package 30 and the housing 20 is limited, and the spacing between the LED packages 30 is also limited to produce a fluorescent lamp type LED lighting apparatus having a high light uniformity. Therefore, a large number of LED packages 30 are required in one fluorescent lamp type LED lighting device. For example, a typical bar type fluorescent lamp has a length of 120 cm and when the fluorescent type LED lighting device is manufactured in accordance with this standard, about 120 to 140 LED packages are required to secure light uniformity. Done.
  • An object of the present invention is to provide an LED lighting device having the same or better light uniformity as in the prior art, while reducing the number of LED packages and improving the productivity and cost competitiveness of the product. It is done.
  • an object of the present invention is to provide an LED lighting device that is formed farther from the LED light source to the cover than in the prior art.
  • an object of the present invention is to provide an LED lighting device that is applied to the LED chip having a wider light directivity than in the prior art.
  • the heat radiation frame A substrate coupled to a lower side of the heat dissipation frame and having a plurality of LED chips mounted on a surface thereof; And a cover coupled to a lower portion of the heat dissipation frame so as to protect the substrate, wherein the cover is configured to transmit light emitted from the LED chip, wherein the LED chip comprises: a first conductivity type semiconductor layer; A plurality of mesas spaced apart from each other on the first conductive semiconductor layer, each of the mesas including an active layer and a second conductive semiconductor layer; Reflective electrodes positioned on the plurality of mesas, respectively, for ohmic contact with a second conductivity-type semiconductor layer; And openings covering the plurality of mesas and the first conductivity type semiconductor layer, the openings being located in the upper region of each mesa and exposing the reflective electrodes, ohmic contacting the first conductivity type semiconductor layer, and the plurality of mesas. And
  • the reflective electrodes may each include a reflective metal layer and a barrier metal layer, and the barrier metal layer may cover the top and side surfaces of the reflective metal layer.
  • the LED chip may further include an upper insulating layer covering at least a portion of the current spreading layer and having openings exposing the reflective electrodes; And a second pad disposed on the upper insulating layer and connected to the reflective electrodes exposed through the openings of the upper insulating layer.
  • the LED lighting apparatus may further include a first pad connected to the current spreading layer.
  • the LED chip may further include a lower insulating layer positioned between the plurality of mesas and the current spreading layer to insulate the current spreading layer from the plurality of mesas. It may have openings located in the mesa upper region and exposing the reflective electrodes.
  • each of the openings of the current spreading layer may have a wider width than the openings of the lower insulating layer so that all of the openings of the lower insulating layer are exposed.
  • the LED chip may further include an upper insulating layer covering at least a portion of the current spreading layer and having openings exposing the reflective electrodes, wherein the upper insulating layer is formed on sidewalls of the openings of the current spreading layer. Can be covered
  • the heat dissipation frame may include a support part on which the substrate is seated, a first rail formed on both sides of the support part in a width direction thereof, and on which both sides of the first rail slide;
  • Each of the cover may include a second rail to which the top of the cover is slide coupled.
  • the heat dissipation frame may further include a heat dissipation unit formed on an upper portion of the support unit such that a space is formed between the support unit.
  • the heat dissipation part may include a pair of extension parts extending upwardly from both sides in the width direction of the support part, and a connection part connecting the upper ends of the pair of extension parts in an arc shape in cross section.
  • the heat dissipation part may further include a plurality of heat dissipation fins spaced apart from each other in a width direction or a length direction of the heat dissipation part on a surface thereof.
  • the heat radiation frame A substrate coupled to a lower side of the heat dissipation frame and having a plurality of LED chips mounted on a surface thereof; And a cover coupled to a lower portion of the heat dissipation frame so as to protect the substrate, wherein the cover is configured to transmit light emitted from the LED chip, wherein the LED chip includes a semiconductor layer including an active layer, and the semiconductor layer on the semiconductor layer. It includes a light transmitting layer for transmitting the light output from the active layer, the thickness of the light transmitting layer is 150 ⁇ m to 300 ⁇ m.
  • the LED chip may be a frameless LED chip.
  • the light transmitting layer may be a growth substrate made of a transparent material.
  • the LED lighting apparatus may further include a lens formed by dotting a resin on the LED chip.
  • the heat dissipation frame may include a support part on which the substrate is seated, a first rail formed on both sides of the support part in a width direction, and formed on both sides of a width direction of the first rail, respectively, on the first rail to slide the substrate.
  • the slide may include a second rail coupled.
  • the heat dissipation frame may further include a heat dissipation unit formed on the support unit such that a space is formed between the support unit.
  • the heat dissipation part may include a pair of extension parts extending upwardly from both sides in the width direction of the support part, and a connection part connecting the upper ends of the pair of extension parts in an arc shape in cross section.
  • the heat dissipation part may further include a plurality of heat dissipation fins spaced apart from each other in a width direction or a length direction of the heat dissipation part on a surface thereof.
  • the frameless LED chip is mounted directly on the substrate, a separate package body is not required, and thus, the LED chip is spaced farther apart from the cover by the height of the package body, thereby reducing the space between the LED packages.
  • By increasing the spacing it is possible to provide an LED lighting device that can secure high light uniformity while reducing the number of LED packages.
  • the LED chip having a wider light directing angle is applied to the LED lighting apparatus of the present invention, productivity and price competitiveness can be improved by reducing the number of LED packages mounted on the substrate.
  • FIG. 1 is a schematic cross-sectional view of a conventional fluorescent lamp type LED lighting device.
  • Figure 2 is an exploded perspective view for explaining the LED lighting apparatus according to an embodiment of the present invention.
  • Figure 3 is a cross-sectional view in the width direction for explaining the LED lighting apparatus according to an embodiment of the present invention.
  • FIG. 4 is a longitudinal cross-sectional view illustrating an arrangement of an LED package in a conventional LED lighting apparatus and an arrangement of a frameless LED chip in the LED lighting apparatus according to embodiments of the present invention.
  • FIG. 5 is a cross-sectional view illustrating a frameless LED chip according to an embodiment of the present invention.
  • FIG. 6 is a plan view and a cross-sectional view for explaining a frameless LED chip according to another embodiment of the present invention.
  • FIG. 7 is a graph showing a change in the directivity angle characteristic according to the thickness change of the light transmission layer of the frameless LED chip.
  • the term "frame-less LED chip” used in the present specification is for distinguishing from a conventional LED chip, the main body, reflector (integrally formed with the main body to form the appearance of the LED chip)
  • a package that does not include a lead frame it refers to a package in which an LED chip excluding a lens unit forms an appearance of an LED chip.
  • Such a frameless LED chip may be a wafer level package in that most packages are configured before dicing the LED chip from the wafer, and the chip scale in that the shape of the package is close to the size of the LED chip.
  • the package may be a chip scale package, or may be a chip on board (COB) type LED package in terms of mounting an LED chip on a substrate without additional components such as leadframes or submounts.
  • “Frameless LED chip” in the present invention means a chip having a LED package that does not include a lead frame, a reflector, and a main body forming a conventional LED package body. As such a frameless LED chip, a light emitting diode disclosed in Korean Patent Application No. 10-2011-0139385 can be exemplified.
  • the frameless LED chip does not include additional components, and since most of the processes are completed in a semiconductor production process, it is possible to reduce time and cost required for manufacturing and to improve reliability. In addition, since there is no component forming the package outline, the size of the package can be reduced, and the heat dissipation efficiency is improved because the LED chip is mounted close to the substrate.
  • FIG. 2 is an exploded perspective view for explaining the LED lighting apparatus according to an embodiment of the present invention
  • Figure 3 is a cross-sectional view in the width direction for explaining the LED lighting apparatus according to an embodiment of the present invention.
  • the LED lighting device 100 As shown in Figure 2 and 3, the LED lighting device 100 according to an embodiment of the present invention, the heat dissipation frame 200, the substrate 300 is coupled to the lower side of the heat dissipation frame 200, The cover 400 is coupled to the lower portion of the heat dissipation frame 200 to protect the substrate 300.
  • a plurality of LED chips 500 may be mounted on the substrate 300 in an array form toward the cover 400.
  • the heat dissipation frame 200 includes a support part 210 on which the substrate 300 to be described later is mounted, a first rail 211 and a first rail 211 protruding downward from both sides in the width direction of the support part 210. It may include a second rail 212 protruding from the outside in the width direction of the, and may further include a heat dissipation unit 230 located on the upper portion of the support (210).
  • the heat dissipation unit 230 is a pair of extension parts 231 extending upwardly from both sides in the width direction of the upper end of the support part 210, and a connection part connecting the upper ends of the pair of extension parts 231 in an arc shape in cross section ( 232 may be included, and thus, a heat dissipation space 220 is formed between the support 210 and the heat dissipation part 230.
  • the heat dissipation unit 230 may further include a heat dissipation fin (not shown) formed on an outer surface thereof to improve the heat dissipation effect, and the plurality of heat dissipation fins may be spaced apart from each other in the width direction or the length direction of the heat dissipation unit 230. In this case, the cooling effect is improved as the surface area of the heat dissipation unit 230 in contact with air is increased.
  • the heat dissipation frame 200 may function to dissipate heat generated from the LED chip 500 to the outside.
  • the heat dissipation frame 200 may be formed of a material having excellent thermal conductivity.
  • the heat dissipation frame 200 may include a metal such as aluminum or copper.
  • the above-described configuration of the heat dissipation frame 200 corresponds to an example, and may be variously modified and implemented according to the shape of the LED lighting apparatus 100.
  • Both sides of the substrate 300 in the width direction thereof are inserted along the first rail 211 of the heat dissipation frame 200 and slide-bonded to the lower support part 210 of the heat dissipation frame 200.
  • a plurality of LED chips 500 are mounted in an array form, and further, an electrical connection capable of applying a voltage to the LED chips 500 such as a wiring pattern. Means may be further provided.
  • the surface of the substrate 300 may be processed through a predetermined process to improve light efficiency, for example, the surface of the substrate 300 may be coated with a white material.
  • one side of the substrate 300 converts the connector 310 to which the connection terminal 311 of the external power supply is connected, the fuse 320 for protecting the circuit at the time of high current or high voltage, and converts the external power source, which is AC, into DC.
  • Various electronic devices such as a bridge diode 330 for supplying the chip 500 and a resistor 340 for controlling current, may be provided.
  • At least one LED chip 500 may be disposed on one surface of the substrate 300.
  • a frameless LED chip is applied as the LED chip 500, so that the number of LED packages mounted on the substrate 300 can be reduced as compared with the related art.
  • the LED chip 500 may include the frameless LED chip 600 or 600a illustrated in FIG. 5 or 6. This will be described later in detail.
  • the substrate 300 may include at least one of plastic and metal, may be formed of one member, or two or more members may be electrically connected to each other.
  • the substrate 300 may include a PCB substrate, a silicon substrate, a ceramic substrate, and the like.
  • the substrate 300 may further include a conductive connection for electrically connecting the various electronic devices and the LED chip 500.
  • the cover 400 may include a plastic having a translucent material, and the cover 400 may be coupled to the lower portion of the heat dissipation frame 200 to protect the substrate 300 and to uniformly transmit the light emitted from the LED chip 500. can do.
  • the cover 400 may form an arc shape in cross section in the width direction as a whole, and the bent portion 410 for corresponding coupling with the second rail 212 of the heat dissipation frame 200 may be formed on both sides of the upper end of the cover 400. It may be formed long along the longitudinal direction of the (400).
  • the bent part 410 of the cover 400 is formed on the second rail 212 of the heat dissipation frame 200.
  • the cover 400 together with the heat dissipation frame 200 forms a cylindrical appearance similar to a conventional fluorescent lamp.
  • FIG. 4 is a longitudinal cross-sectional view illustrating an arrangement of an LED package in a conventional LED lighting apparatus and an arrangement of a frameless LED chip in the LED lighting apparatus according to embodiments of the present invention.
  • 5 is a cross-sectional view illustrating a frameless LED chip according to an embodiment of the present invention
  • FIG. 6 is a plan view and a cross-sectional view illustrating a frameless LED chip according to another embodiment of the present invention.
  • an LED lighting apparatus including a frameless LED chip according to the present invention will be described with reference to FIGS. 4 to 6.
  • the embodiments described below are exemplary and are not limited thereto.
  • a plurality of frameless LED chip 600 is mounted on the substrate 300 in the form of an array (array), compared to the conventional package of the LED package mounted on the substrate 300
  • the number can be reduced.
  • the frameless LED chip 600 does not include a separate package body 32, a reflector 34, and a lead frame, and forms the appearance of the LED package as the LED chip itself.
  • the distance from the cover 400 is greater than that of the conventional LED chip 31 by the thickness of the package body 32.
  • a resin 610 may be further formed by dotting an epoxy or the like on the frameless LED chip 600.
  • the frameless LED chip 600 is electrically connected to the light emitting structure 615, the light transmitting layer 610 disposed on the light emitting structure 615, and the light emitting structure 615.
  • the first pad 681 and the second pad 682 may be connected to each other.
  • the light transmitting layer 610 may include a substrate, and may include, for example, a sapphire substrate, a nitride substrate, a silicon substrate, a silicon carbide substrate, and the like, and is not limited to a transparent substrate through which light can be transmitted. .
  • the light transmitting layer 610 may be a sapphire substrate.
  • the thickness of the light transmitting layer 610 may be variously adjusted as necessary, and the thickness may be determined according to the orientation angle of the frameless LED chip 600. This will be described later in detail.
  • the light emitting structure 615 may include an n-type semiconductor layer, a p-type semiconductor layer, and an active layer, and is not limited as long as it has a structure capable of emitting light.
  • the first pad 681 and the second pad 682 may be connected to semiconductor layers having different polarities, respectively, and may serve to connect an external power source to the semiconductor layer.
  • the first and second pads 681 and 682 may function similar to a lead frame of a conventional LED package, and thus, the frameless LED chip 600 does not need to include a separate lead frame.
  • the frameless LED chip 600 is not limited as long as it includes a substrate, a light emitting structure, and pads. An example of the frameless LED chip will be described below with reference to FIG. 6.
  • FIG. 6A is a plan view of a frameless LED chip
  • FIG. 6B is a cross-sectional view taken along line AA ′ of FIG. 5A.
  • the frameless LED chip 600 includes a first conductive semiconductor layer 620, mesas 630, reflective electrodes 640, and current dispersion.
  • the layer 660 may further include a light transmitting layer 610, a lower insulating layer 650, an upper insulating layer 670, and a first pad 681 and a second pad 682.
  • the light transmitting layer 610 may be a growth substrate for growing gallium nitride-based epi layers.
  • the light transmitting layer 610 may be a sapphire, silicon carbide, silicon, gallium nitride substrate.
  • the light transmitting layer 610 may be a sapphire substrate.
  • the top and side surfaces of the light transmitting layer 610 may be a light exit surface from which the light emitted from the active layer 631 is emitted.
  • the first conductive semiconductor layer 620 is continuous, and the plurality of mesas 630 are spaced apart from each other on the first conductive semiconductor layer 620.
  • the mesas 630 include an active layer 631 and a second conductivity type semiconductor layer 632, and have an elongated shape extending toward one side.
  • the mesas 630 may be a stacked structure of a gallium nitride compound semiconductor.
  • the mesas 630 may be limitedly positioned in the upper region of the first conductivity type semiconductor layer 620. Alternatively, the mesas 630 may extend to the edge of the upper surface of the first conductivity type semiconductor layer 620 in one direction. The upper surface of the first conductivity type semiconductor layer 620 may be divided into a plurality of regions. In this case, it is possible to further reduce current concentration near the edges of the mesas 630 to further enhance the current spreading performance.
  • Each of the reflective electrodes 640 is positioned on the plurality of mesas 630 to make ohmic contact on the second conductivity-type semiconductor layer 632.
  • the reflective electrodes 640 may include a reflective layer 642 and a barrier layer 641, and the barrier layer 641 may cover the top and side surfaces of the reflective layer 642.
  • the reflective layer 642 may be formed by depositing and patterning an Ag, Ag alloy, Ni / Ag, NiZn / Ag, TiO / Ag layer
  • the barrier layer 641 may be Ni, Cr, Ti, Pt. , Rd, Ru, W, Mo, TiW, or a composite layer thereof, and prevents the metal material of the reflective layer 642 from being diffused or contaminated.
  • the current spreading layer 660 covers the mesas 630 and the first conductivity type semiconductor layer 620.
  • the current spreading layer 660 is located in an upper region of each mesa 630 and has openings 661 exposing the reflective electrodes 640.
  • the current spreading layer 660 is ohmic contacted to the first conductivity type semiconductor layer 620 and insulated from the plurality of mesas 630.
  • the current spreading layer 660 may include a high reflective metal layer such as an Al layer, and the high reflective metal layer may be formed on an adhesive layer such as Ti, Cr, or Ni.
  • a protective layer of a single layer or a composite layer structure such as Ni, Cr, Au, or the like may be formed on the highly reflective metal layer.
  • the current spreading layer 660 may have a multilayer structure of Ti / Al / Ti / Ni / Au.
  • the current spreading layer 660 may be insulated from the plurality of mesas 630 by the lower insulating layer 650.
  • the lower insulating layer 650 may be positioned between the mesas 630 and the current spreading layer 660 to insulate the current spreading layer 660 from the plurality of mesas 630.
  • the lower insulating layer 650 may be formed of an oxide film such as SiO 2 , a nitride film such as SiN x, or an insulating film of SiON or MgF 2 using a technique such as chemical vapor deposition (CVD).
  • the lower insulating layer 650 may be formed of a single layer, but is not limited thereto and may be formed of multiple layers.
  • the lower insulating layer 650 may be formed of a distributed Bragg reflector (DBR) in which a low refractive material layer and a high refractive material layer are alternately stacked.
  • DBR distributed Bragg reflector
  • an insulating reflective layer having a high reflectance can be formed by applying a layer such as SiO 2 / TiO 2 or SiO 2 / Nb 2 O 5 .
  • the lower insulating layer 650 may have openings 651 located in the upper region of each mesa 630 and exposing the reflective electrodes 640 and openings exposing the first conductive semiconductor layer 620. 652).
  • the current spreading layer 660 may be connected to the first conductive semiconductor layer 620 through openings 652 exposing the first conductive semiconductor layer 620.
  • the openings 651 of the lower insulating layer 650 have a smaller area than the openings 661 of the current spreading layer 660, and are all exposed by the openings 661.
  • the upper insulating layer 670 may be formed using an oxide insulating layer, a nitride insulating layer, a mixed layer or a cross layer of these insulating layers, or a polymer such as polyimide, teflon, parylene, and the like. Cover at least some.
  • the upper insulating layer 670 has openings 672 exposing the reflective electrodes 640.
  • the upper insulating layer 670 may have an opening 671 exposing the current spreading layer 660.
  • the upper insulating layer 670 may cover sidewalls of the openings 661 of the current spreading layer 660.
  • the first pad 681 may be positioned on the current spreading layer 660 and may be connected to the current spreading layer 660 through, for example, an opening 671 of the upper insulating layer 670.
  • the second pad 682 connects to the exposed reflective electrodes 640 through the openings 672.
  • the first pad 681 and the second pad 682 may be used as a pad for SMT or a bump for mounting the LED to a submount, package, or printed circuit board, for example, Ti, Cr, Ni It may include an adhesive layer such as, and a highly conductive metal layer such as Al, Cu, Ag or Au.
  • the current spreading layer 660 covers almost the entire area of the first conductivity-type semiconductor layer 620 between the mesas 630 and the mesas 630. Thus, current can be easily distributed through the current spreading layer 660. Furthermore, the current spreading layer 660 includes a reflective metal layer such as Al, or the lower insulating layer 650 is formed as an insulating reflecting layer, so that the light not reflected by the reflecting electrodes 640 is applied to the current spreading layer 660. Alternatively, the light may be reflected by using the lower insulating layer 650 to improve light extraction efficiency.
  • the directing angle of the conventional LED package 30 is represented by ⁇
  • the directing angle of the frameless LED chip 600 according to an embodiment of the present invention Is denoted by ⁇
  • the directivity angle of the frameless LED chip 600a according to another embodiment of the present invention is denoted by ⁇ .
  • the frameless LED chip 600 of the present invention does not include a reflector 34, a larger orientation angle than the conventional LED package 30 ( ⁇ ⁇ ). Accordingly, the distance between the largest LED chips to uniformly form the light emitted to the cover 400 can be larger than in the conventional case (d 2 > d 1 ). Therefore, while mounting a smaller number of LED chips on the same length of the substrate 300 it is possible to ensure sufficient light uniformity.
  • the frameless LED chip 600 does not include the package body 32. Therefore, the distance from the light emitting point to the cover 400 is longer than in the conventional case (h 2 > h 1 ). Accordingly, the distance between the largest LED chips to uniformly form the light emitted to the cover 400 can be larger than in the conventional case (d 2 > d 1 ). Therefore, while mounting a smaller number of LED chips on the same length of the substrate 300 it is possible to ensure sufficient light uniformity.
  • the frameless LED chip 600 of Figure 4 (c) has a larger direct angle than the frameless LED chip 600 of Figure 4 (b) It can have ( ⁇ > ⁇ ). Accordingly, the distance between the largest LED chips for uniformly forming the light emitted to the cover 400 can be made larger than in the conventional case and the case of FIG. 4 (b) (d 3 > d 2 > d). 1 ). Therefore, while mounting a smaller number of LED chips on the same length of the substrate 300, it is possible to ensure sufficient light uniformity.
  • the frameless LED chip 600 of FIG. 4C having a relatively wider directivity can be provided by adjusting the thickness of the light transmitting layer 610. This will be described in detail with reference to FIGS. 7 to 11.
  • the light transmitting layer 610 is a sapphire substrate.
  • FIG. 7 is a graph illustrating a change in the direction angle characteristic of the frameless LED chip 600 according to the thickness change of the light transmission layer.
  • the thickness of the light transmitting layer 610 of the frameless LED chip 600 may be 150 ⁇ m to 300 ⁇ m. If the thickness of the light transmitting layer 610 is less than 150 ⁇ m, there is almost no difference from the general direction angle (120 °). If the thickness of the light transmitting layer 610 exceeds 300 ⁇ m, the change is slowed at the angle of 140 °. Because it becomes.
  • the number of LED packages may be reduced by mounting the frameless LED chip 600 on the substrate 300 of the LED lighting apparatus 100.
  • the frameless LED chip 600 If the light directivity of the is wider than that of a typical LED chip, the effect of reducing the number of packages is further increased.
  • the LED lighting device to replace a conventional 120cm long fluorescent lamp, conventionally requires 120 to 140 LED package, according to an embodiment of the present invention, 80 to 90 frameless LED chip ( 600, the light uniformity can be sufficiently secured.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

La présente invention concerne un dispositif d'éclairage à DEL permettant de remplacer des lampes fluorescentes existantes, le dispositif d'éclairage à DEL comprenant un nombre de puces à DEL qui lui sont appliquées inférieur et présentant une excellente uniformité optique. Selon un mode de réalisation de la présente invention, le dispositif d'éclairage à DEL comprend : un cadre dissipant la chaleur ; un substrat qui est accouplé au côté inférieur du cadre dissipant la chaleur et qui présente une surface sur laquelle une pluralité de puces à DEL est montée ; et un couvercle qui est accouplé sous le cadre dissipant la chaleur de manière à protéger le substrat et permettant la pénétration de la lumière émise par les puces à DEL. Les puces à DEL sont des puces à DEL sans cadre.
PCT/KR2013/010422 2012-11-19 2013-11-15 Dispositif d'éclairage à del Ceased WO2014077631A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2012-0130629 2012-11-19
KR1020120130629A KR20140063922A (ko) 2012-11-19 2012-11-19 Ｌｅｄ 조명장치
KR10-2012-0131752 2012-11-20
KR1020120131752A KR20140070710A (ko) 2012-11-20 2012-11-20 Ｌｅｄ 조명장치

Publications (1)

Publication Number Publication Date
WO2014077631A1 true WO2014077631A1 (fr) 2014-05-22

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Application Number Title Priority Date Filing Date
PCT/KR2013/010422 Ceased WO2014077631A1 (fr) 2012-11-19 2013-11-15 Dispositif d'éclairage à del

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Country Link
WO (1) WO2014077631A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183930A (ja) * 2003-11-26 2005-07-07 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
KR20120049450A (ko) * 2010-11-08 2012-05-17 서울반도체 주식회사 Ｌｅｄ 조명 램프
KR20120079327A (ko) * 2011-01-04 2012-07-12 갤럭시아포토닉스 주식회사 개구부가 형성된 전류 분산층을 갖는 발광 다이오드 및 발광 다이오드 패키지
JP2012190744A (ja) * 2011-03-14 2012-10-04 Koito Mfg Co Ltd 蛍光灯型ｌｅｄ灯具
US20120256198A1 (en) * 2011-04-06 2012-10-11 Lustrous Technology Ltd. Led package structure for increasing the light uniforming effect

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183930A (ja) * 2003-11-26 2005-07-07 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
KR20120049450A (ko) * 2010-11-08 2012-05-17 서울반도체 주식회사 Ｌｅｄ 조명 램프
KR20120079327A (ko) * 2011-01-04 2012-07-12 갤럭시아포토닉스 주식회사 개구부가 형성된 전류 분산층을 갖는 발광 다이오드 및 발광 다이오드 패키지
JP2012190744A (ja) * 2011-03-14 2012-10-04 Koito Mfg Co Ltd 蛍光灯型ｌｅｄ灯具
US20120256198A1 (en) * 2011-04-06 2012-10-11 Lustrous Technology Ltd. Led package structure for increasing the light uniforming effect

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