WO2013120633A1 - Conductive paste and method for producing a semiconductor device - Google Patents
Conductive paste and method for producing a semiconductor device Download PDFInfo
- Publication number
- WO2013120633A1 WO2013120633A1 PCT/EP2013/050043 EP2013050043W WO2013120633A1 WO 2013120633 A1 WO2013120633 A1 WO 2013120633A1 EP 2013050043 W EP2013050043 W EP 2013050043W WO 2013120633 A1 WO2013120633 A1 WO 2013120633A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- screen printing
- paste
- conductive paste
- additive
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to conductive or screen printing pastes, as they are used for the production of electrical contacts on semiconductor devices, such as solar cells. It further relates to a method of manufacturing a semiconductor device, in particular, a crystalline type solar cell having an Si substrate, wherein by coating a surface of the Si substrate with an AI-based screen printing paste and a sintering step, the diffusion of Al from causes the screen printing paste in the Si substrate, p + -doped areas are formed in the surface.
- FIG. 1 shows a schematic perspective sectional view of the essential parts / regions of a solar cell 1 formed according to this concept with an n-type silicon oxide.
- FSF front-surface-field
- p + -AI-back emitter 7 On the one (back in use) substrate surface, an Al-contact (back contact) 9 is formed over the entire surface while the other (front surface in use) of the Si substrate 3 is provided with a SiN antireflection coating 11 comprising randomly arranged pyramids IIa for improving the energy yield of the incident sunlight.
- Ag contact fingers 13 are formed on an aerosol seed layer (not shown) on the front side.
- the solar cell emitter is generated by sintering an aluminum (AI) screen printing paste applied over the entire surface of the back of the cell. In this case, the aluminum diffuses into the n-type silicon wafer and forms a high
- Al-doped p-emitter layer Al-doped p-emitter layer.
- the front side contact 13 can be produced by screen-printed silver pastes. Solar cells of this type achieve efficiencies of more than 18%, which represents an increase in efficiency of 1% compared with 17% of the p-type solar cell produced in an identical process sequence.
- Substrate material to control in a suitable manner cf. US 2006/0289005 AI.
- the invention has for its object to provide a conductive paste, which can be printed directly on the Al back contact of the AARE cell and received after sintering a mechanically stable connection to both the AI contact and the subsequently brazed copper ribbon. It is further intended to provide a process for producing a solar cell of that type.
- an Ag-based conductive paste used to form contact areas on a substrate surface previously coated with an Al-containing screen printing paste for doping purposes has an adhesion promoter additive to improve adhesion to the Al-containing one Underlay.
- a proportion of the adhesion promoter additive between 5 and 20 wt .-%, in particular between 9 and 15 wt .-%, has proven to be useful.
- Si-powder is well suited as adhesion promoter, but the invention is not limited to this choice of material.
- the adhesion promoter (especially Si powder) increases the mechanical stability of the Al-Ag interface region.
- This paste makes it possible to retain the previous process sequence used for p-type solar cells for the production of solar cells without additional process steps. Furthermore, no changes to the previous process for module interconnection are necessary. The direct soldering of copper ribbon with the silver stripes on the back is still possible.
- an AI-based screen printing paste is provided with a strength-enhancing powdery additive for improving its structural integrity. It has proven expedient to admix this additive in a proportion of between 3 and 15% by weight, in particular between 6 and 10% by weight. Both aspects of the invention have in common that according to current knowledge expediently the adhesion promoter additive or strength-increasing additive a powder having a particle size between 1 and 20 ⁇ , in particular between 3 and 10 ⁇ having.
- the coating with the screen printing paste and the conductive paste are carried out before a single, common sintering step, which is carried out in particular at 700 to 850 ° C.
- the Al screen printing paste proposed according to the second aspect of the invention can also be used for p-doping the substrate surface in this process.
- Fig. 1 is a schematic representation of a solar cell according to the
- FIG. 2 schematically shows, in the manner of a cross-sectional illustration, a rear side section of a solar cell which extends through a lower subarea of an n-Si substrate 3, an Al-doped p + emitter region 7, an Al screen-printing paste layer 9 'and Ag Leitpastenstsammlung 15 'is formed, before the completion of the back-side doping and contact structure.
- This is formed by sintering the Al screen printing paste and the Ag Leitpastenstsammlung, preferably in a common sintering step in the range between 700 and 850 ° C.
- the back emitter region 7 already shown in the figure and metallic Ag contact strips are formed.
- FIG. 2A shows, in a detailed view, the element structure of the boundary layer region between Al screen printing paste and Ag conductive paste, with Al atoms 17, Ag atoms 19 and Si atoms 21, which are admixed with the Ag conductive paste as adhesion promoter.
- An exemplary composition of the Ag conductive paste is the following:
- Binder 10 wt.%
- Al screen printing paste 9 - 15 wt.% Particle size: 3 - 10 ⁇
- An exemplary composition of the Al screen printing paste is the following:
- Si powder 6 - 10 vol.%
- Particle size 3 - 10 ⁇
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Description
Beschreibung Titel Leitpaste und Verfahren zur Herstellung einer Halbleitereinrichtunq Description Title Conductive paste and process for producing a semiconductor device
Die Erfindung betrifft Leit- bzw. Siebdruckpasten, wie sie zur Herstellung von elektrischen Kontakten auf Halbleiterbauelementen, beispielsweise Solarzellen, benutzt werden. Sie betrifft des Weiteren ein Verfahren zur Herstellung einer Halbleitereinrichtung, insbesondere einer Solarzelle vom kristallinen Typ, mit einem Si-Substrat, wobei durch Belegen einer Oberfläche des Si-Substrats mit einer Siebdruckpaste auf AI-Basis und einen Sinterschritt, der ein Eindiffundieren von AI aus der Siebdruckpaste in das Si-Substrat bewirkt, p+-dotierte Bereiche in der Oberfläche gebildet werden. The invention relates to conductive or screen printing pastes, as they are used for the production of electrical contacts on semiconductor devices, such as solar cells. It further relates to a method of manufacturing a semiconductor device, in particular, a crystalline type solar cell having an Si substrate, wherein by coating a surface of the Si substrate with an AI-based screen printing paste and a sintering step, the diffusion of Al from causes the screen printing paste in the Si substrate, p + -doped areas are formed in the surface.
Stand der Technik State of the art
Zur Zeit werden 90 % aller kristallinen Solarzellen aus Bor(B)-dotiertem p-Typ- Silizium gefertigt. Diese Solarzellen haben das Problem, dass Sie aufgrund der im Silizium typischerweise vorhandenen Eisen(Fe)-Kontaminationen unter Lichteinfall degradieren. Hierbei bildet das Fe mit dem Dotierstoff B einen rekombinationsaktiven Fe-B-Komplex, welcher die Effizienz der Solarzelle negativ beeinflusst, vgl. J. Schmidt, Progress in Photovoltaics, Vol. 13, p. 325 (2005). Aus diesem Grund gibt es Bestrebungen, langfristig auf mit Phosphor n-dotierte Siliziumwafer als Grundmaterial in der Solarzellenfertigung überzugehen. Ein mögliches Solarzellenkonzept für n-Typ-Solarzellen ist das so genannte Aluminium-Alloyed Rear- Emitter(AARE)-Konzept; vgl. C. Schmiga, M. Hörteis, M. Rauer, K. Meyer, J. At present 90% of all crystalline solar cells are made of boron (B) -doped p-type silicon. These solar cells have the problem that they degrade due to the typically present in silicon iron (Fe) contamination under light. Here, the Fe with the dopant B forms a recombination-active Fe-B complex, which adversely affects the efficiency of the solar cell, cf. J. Schmidt, Progress in Photovoltaics, Vol. 13, p. 325 (2005). For this reason, there are efforts in the long term to move to phosphorus n-doped silicon wafers as a base material in solar cell production. One possible solar cell concept for n-type solar cells is the so-called aluminum-alloyed rear-emitter (AARE) concept; see. C. Schmiga, M. Hörteis, M. Rauer, K. Meyer, J.
Lossen, H. J. Krokoszinski, M. Hermle, S. W. Glunz, Proc. of the 24th PVSEC, Hamburg (Germany), p. 1167, 2009. Lossen, H.J. Krokoszinski, M. Hermle, S.W. Glunz, Proc. of the 24th PVSEC, Hamburg (Germany), p. 1167, 2009.
Fig. 1 zeigt als schematische perspektivische Schnittansicht die wesentlichen Teile/Bereiche einer nach diesem Konzept gebildeten Solarzelle 1 mit einem n-Si- Substrat 3, einem n+-P-Front-Surface-Field (FSF) 5 und einem p+-AI-Rückseiten- emitter 7. Auf der einen (im Gebrauch rückseitigen) Substratoberfläche ist ein AI-Kontakt (Rückseitenkontakt) 9 vollflächig ausgebildet, während die andere (im Gebrauch vorderseitige) Oberfläche des Si-Substrats 3 mit einer SiN-Antireflex- beschichtung 11 versehen ist, welche regellos angeordnete Pyramiden IIa zur Verbesserung der Energieausbeute des einfallenden Sonnenlichts umfasst. Zur frontseitigen Kontaktierung der Solarzelle 1 sind auf der Vorderseite Ag-Kontakt- finger 13 auf einer Aerosol-Keimschicht (nicht dargestellt) gebildet. Hier wird der Solarzellenemitter über das Sintern einer auf der Rückseite der Zelle ganzflächig aufgebrachten Aluminium-(AI) Siebdruckpaste erzeugt. Hierbei diffundiert das Aluminium in den n-Typ-Siliziumwafer und bildet eine hoch 1 shows a schematic perspective sectional view of the essential parts / regions of a solar cell 1 formed according to this concept with an n-type silicon oxide. Substrate 3, an n + -P front-surface-field (FSF) 5 and a p + -AI-back emitter 7. On the one (back in use) substrate surface, an Al-contact (back contact) 9 is formed over the entire surface while the other (front surface in use) of the Si substrate 3 is provided with a SiN antireflection coating 11 comprising randomly arranged pyramids IIa for improving the energy yield of the incident sunlight. For the front-side contacting of the solar cell 1, Ag contact fingers 13 are formed on an aerosol seed layer (not shown) on the front side. Here, the solar cell emitter is generated by sintering an aluminum (AI) screen printing paste applied over the entire surface of the back of the cell. In this case, the aluminum diffuses into the n-type silicon wafer and forms a high
AI-dotierte p-Emitterschicht. Der Vorderseitenkontakt 13 kann mittels siebgedruckter Silberpasten erzeugt werden. Solarzellen dieser Art erreichen Wirkungs- grade von über 18 %, was einer Effizienzsteigerung von 1 % gegenüber der in einem identischen Prozessablauf hergestellten p-Typ-Solarzelle mit 17 % Al-doped p-emitter layer. The front side contact 13 can be produced by screen-printed silver pastes. Solar cells of this type achieve efficiencies of more than 18%, which represents an increase in efficiency of 1% compared with 17% of the p-type solar cell produced in an identical process sequence.
Wirkungsgrad entspricht. Efficiency corresponds.
Ein Hindernis für die kommerzielle Markteinführung dieser Zellen stellt die An obstacle to the commercial market introduction of these cells is the
Modulverschaltung dar. Um die Rückseite der Zelle im Solarzellenmodul zu kontaktieren, wird bei p-Typ-Solarzellen auf der Rückseite ein Streifen mit Silber(Ag)-Paste direkt auf das Silizium gedruckt, gesintert und anschließend in einem Lötprozess mit einem Kupferbändchen kontaktiert. Dieser Prozessablauf ist mit der AARE Solarzelle nicht mehr möglich, da das Aluminium bei diesem Zelltyp ganzflächig aufgebracht werden muss und so keine Fläche für zusätzliche, direkt auf den Silizium Wafer gedruckte Ag-Kontakte verbleibt, mit denen die Cu-Bänd- chen verlötet werden könnten. To connect the back of the cell in the solar cell module, p-type solar cells on the back of a strip with silver (Ag) paste is printed directly on the silicon, sintered and then contacted in a soldering process with a copper ribbon. This process sequence is no longer possible with the AARE solar cell, since the aluminum in this cell type has to be applied over the entire surface, leaving no area for additional Ag contacts printed directly on the silicon wafer, with which the Cu bands could be soldered ,
Lösungen zum direkten Löten von Cu-Bändchen auf AI-Rückseitenkontakte von Solarzellen sind zur Zeit noch nicht bekannt. Es gibt aber bereits Untersuchungen zum Laserschweißen von Cu auf AI; vgl. I. Mys., M. Schmidt, Proc. Of the SPIE, USA, vol. 6107, p. 610703 (2006). Für ein solches Alternativverfahren wäre aber eine Umrüstung der bisherigen Modulproduktionsanlagen notwendig. Eine Alternative ist das Drucken von Ag-Bahnen auf den Aluminium-Rückseitenkontakt. Hier hat sich aber gezeigt, dass direkt auf das AI gedruckte Ag Paste nicht haftet und keine mechanisch stabile Verbindung mit dem AI-Kontakt eingeht. Im Zusammenhang mit dem seit langem bewährten und praktizierten Ein- satz von Leitpasten (Siebdruckpasten) auf Ag- oder AI-Basis ist es auch bekannt geworden, solchen Pasten Si-Pulver beizumengen, um speziell das Reaktionsvermögen der Metallkomponente der jeweiligen Paste mit Silizium, also dem Solutions for direct soldering of Cu ribbon to AI backside contacts of solar cells are not yet known. However, there are already studies on the laser welding of Cu to Al; see. I. Mys., M. Schmidt, Proc. Of the SPIE, USA, vol. 6107, p. 610703 (2006). For such an alternative method, however, a conversion of the previous module production facilities would be necessary. An alternative is the printing of Ag webs on the aluminum back contact. Here it has been shown that directly on the AI printed Ag paste is not liable and no mechanically stable connection with the AI contact is received. In connection with the long-established and practiced use of conductive pastes (screen printing pastes) based on Ag or Al, it has also become known to add Si powder to such pastes in order in particular to increase the reactivity of the metal component of the respective paste with silicon, ie the
Substratmaterial, in geeigneter Weise zu steuern, vgl. US 2006/0289005 AI. Der Erfindung liegt die Aufgabe zugrunde, eine Leitpaste bereitzustellen, welche direkt auf den Al-Rückkontakt der AARE-Zelle gedruckt werden kann und nach dem Sintern eine mechanisch stabile Verbindung sowohl zum AI-Kontakt als auch zum darauffolgend aufgelöteten Kupferbändchen eingeht. Es soll des Weiteren ein Verfahren zur Herstellung einer Solarzelle jenes Typs bereitgestellt werden. Substrate material to control in a suitable manner, cf. US 2006/0289005 AI. The invention has for its object to provide a conductive paste, which can be printed directly on the Al back contact of the AARE cell and received after sintering a mechanically stable connection to both the AI contact and the subsequently brazed copper ribbon. It is further intended to provide a process for producing a solar cell of that type.
Offenbarung der Erfindung Disclosure of the invention
Diese Aufgabe wird in ihrem Produktaspekt durch eine Leitpaste mit den Merkmalen des Anspruchs 1 und in ihrem Verfahrensaspekt durch ein Verfahren mit den Merkmalen des Anspruchs 6 gelöst. This object is achieved in its product aspect by a conductive paste having the features of claim 1 and in its method aspect by a method having the features of claim 6.
Des Weiteren wird eine Siebdruckpaste mit den Merkmalen des Anspruchs 3 bereitgestellt. Zweckmäßige Fortbildungen des Erfindungsgedankens sind Gegenstand der jeweiligen abhängigen Ansprüche. Furthermore, a screen printing paste having the features of claim 3 is provided. Advantageous further developments of the inventive concept are the subject of the respective dependent claims.
Gemäß einem ersten Aspekt der Erfindung weist eine Ag-basierte Leitpaste, die zur Erzeugung von Kontaktbereichen auf einer Substratoberfläche genutzt wird, die vorher zu Dotierungszwecken mit einer Al-haltigen Siebdruckpaste beschichtet wurde, einen Haftvermittler-Zusatz zur Verbesserung der Haftung auf der Al-haltigen Unterlage auf. Hierbei hat sich ein Anteil des Haftvermittler-Zusatzes zwischen 5 und 20 Gew.-%, insbesondere zwischen 9 und 15 Gew.-%, als zweckmäßig erwiesen. Aus derzeitiger Sicht ist als Haftvermittler Si-Pulver gut geeignet, die Erfindung ist aber nicht auf diese Materialwahl beschränkt. Der Haftvermittler (speziell Si-Pulver) erhöht die mechanische Stabilität des Al-Ag-Grenzschichtbereichs. Diese Paste ermöglicht die Beibehaltung des bisherigen, für p-Typ-Solarzellen eingesetzten Prozessablaufs zur Herstellung von Solarzellen ohne zusätzliche Prozessschritte. Des Weiteren sind auch keine Änderungen des bisherigen Prozesses zur Modulverschaltung notwendig. Das direkte verlöten von Cu-Bändchen mit den Silberstreifen auf der Rückseite ist weiterhin möglich. According to a first aspect of the invention, an Ag-based conductive paste used to form contact areas on a substrate surface previously coated with an Al-containing screen printing paste for doping purposes has an adhesion promoter additive to improve adhesion to the Al-containing one Underlay. In this case, a proportion of the adhesion promoter additive between 5 and 20 wt .-%, in particular between 9 and 15 wt .-%, has proven to be useful. From the current point of view Si-powder is well suited as adhesion promoter, but the invention is not limited to this choice of material. The adhesion promoter (especially Si powder) increases the mechanical stability of the Al-Ag interface region. This paste makes it possible to retain the previous process sequence used for p-type solar cells for the production of solar cells without additional process steps. Furthermore, no changes to the previous process for module interconnection are necessary. The direct soldering of copper ribbon with the silver stripes on the back is still possible.
Gemäß einem zweiten Aspekt der Erfindung wird eine Siebdruckpaste auf AI-Basis mit einem festigkeitserhöhenden pulverförmigen Zusatz zur Verbesserung ihrer strukturellen Integrität versehen. Es hat sich dabei als zweckmäßig erwiesen, diesen Zusatz in einem Anteil zwischen 3 und 15 Gew.-%, insbesondere zwischen 6 und 10 Gew.-%, beizumischen. Beiden Aspekten der Erfindung ist gemeinsam, dass nach derzeitigem Kenntnisstand zweckmäßigerweise der Haftvermittler- Zusatz oder festigkeitserhöhende Zusatz ein Pulver mit einer Teilchengröße zwischen 1 und 20 μιτι, insbesondere zwischen 3 und 10 μιτι, aufweist. According to a second aspect of the invention, an AI-based screen printing paste is provided with a strength-enhancing powdery additive for improving its structural integrity. It has proven expedient to admix this additive in a proportion of between 3 and 15% by weight, in particular between 6 and 10% by weight. Both aspects of the invention have in common that according to current knowledge expediently the adhesion promoter additive or strength-increasing additive a powder having a particle size between 1 and 20 μιτι, in particular between 3 and 10 μιτι having.
In einer Ausgestaltung der vorgeschlagenen Verfahrensführung werden das Belegen mit der Siebdruckpaste und der Leitpaste vor einem einzelnen, gemein- samen Sinterschritt, der insbesondere bei 700 bis 850 °C durchgeführt wird, vorgenommen. Neben der gemäß im ersten Aspekt der Erfindung bereitgestellten speziellen Ag-Leitpaste kann bei diesem Verfahren auch die gemäß dem zweiten Aspekt der Erfindung vorgeschlagene Al-Siebdruckpaste zur p-Dotierung der Substratoberfläche eingesetzt werden. In one embodiment of the proposed process management, the coating with the screen printing paste and the conductive paste are carried out before a single, common sintering step, which is carried out in particular at 700 to 850 ° C. In addition to the special Ag conductive paste provided according to the first aspect of the invention, the Al screen printing paste proposed according to the second aspect of the invention can also be used for p-doping the substrate surface in this process.
Zeichnungen drawings
Weitere Vorteile und vorteilhafte Ausgestaltungen der erfindungsgemäßen Further advantages and advantageous embodiments of the invention
Gegenstände werden durch die Zeichnungen veranschaulicht und in der nach- folgenden Beschreibung erläutert. Dabei ist zu beachten, dass die Zeichnungen nur beschreibenden Charakter haben und nicht dazu gedacht sind, die Erfindung in irgendeiner Form einzuschränken. Es zeigen: Fig. 1 eine schematische Darstellung einer Solarzelle gemäß dem Objects are illustrated by the drawings and explained in the following description. It should be noted that the drawings have only descriptive character and are not intended to limit the invention in any way. Show it: Fig. 1 is a schematic representation of a solar cell according to the
AARE-Konzept und AARE concept and
Fig. 2 und 2A eine schematische Darstellung eines Ausführungsbeispiels der 2 and 2A is a schematic representation of an embodiment of the
Erfindung. Invention.
Ausführungsformen der Erfindung Embodiments of the invention
Fig. 2 zeigt schematisch in Art einer Querschnittsdarstellung einen Rückseiten- abschnitt einer Solarzelle , der durch einen unteren Teilbereich eines n-Si- Substrats 3, einen AI-dotierten p+-Emitterbereich 7, eine Al-Siebdruckpasten- schicht 9' und Ag-Leitpastenstreifen 15' gebildet ist, vor der Fertigstellung der rückseitigen Dotierungs- und Kontaktstruktur. Diese wird durch Sintern der Al- Siebdruckpaste und der Ag-Leitpastenstreifen, bevorzugt in einem gemeinsamen Sinterschritt im Bereich zwischen 700 und 850 °C, ausgebildet. Hierbei bilden sich der in der Figur bereits gezeigte rückseitige Emitterbereich 7 sowie metallische Ag-Kontaktstreifen aus. 2 schematically shows, in the manner of a cross-sectional illustration, a rear side section of a solar cell which extends through a lower subarea of an n-Si substrate 3, an Al-doped p + emitter region 7, an Al screen-printing paste layer 9 'and Ag Leitpastenstreifen 15 'is formed, before the completion of the back-side doping and contact structure. This is formed by sintering the Al screen printing paste and the Ag Leitpastenstreifen, preferably in a common sintering step in the range between 700 and 850 ° C. In this case, the back emitter region 7 already shown in the figure and metallic Ag contact strips are formed.
Fig. 2A zeigt in einer Detailansicht schematisch die Elementstruktur des Grenz- Schichtbereiches zwischen Al-Siebdruckpaste und Ag-Leitpaste, mit AI-Atomen 17, Ag-Atomen 19 und Si-Atomen 21, die der Ag-Leitpaste als Haftvermittler beigemischt sind. 2A shows, in a detailed view, the element structure of the boundary layer region between Al screen printing paste and Ag conductive paste, with Al atoms 17, Ag atoms 19 and Si atoms 21, which are admixed with the Ag conductive paste as adhesion promoter.
Eine beispielhafte Zusammensetzung der Ag-Leitpaste ist die folgende: An exemplary composition of the Ag conductive paste is the following:
Ag-Pulver: 75 wt. % Partikelgröße: 3 - 10 μιτι Ag powder: 75 wt.% Particle size: 3 - 10 μιτι
Binder: 10 wt.% Binder: 10 wt.%
Glas-Fritte: 0-3 wt. % Glass frit: 0-3 wt.%
Additive: 0-3 wt. % Additives: 0-3 wt.%
Si-Pulver: 9 - 15 wt. % Partikelgröße: 3 - 10 μιτι Eine beispielhafte Zusammensetzung der Al-Siebdruckpaste ist die folgende: Si powder: 9 - 15 wt.% Particle size: 3 - 10 μιτι An exemplary composition of the Al screen printing paste is the following:
AI-Pulver: 27 Vol. % Partikelgröße: 3 - 10 μιτι Al powder: 27 vol.% Particle size: 3 - 10 μιτι
Binder: 5 Vol. % Binder: 5 vol.%
Glas-Fritte: 0 - 3 Vol. % Glass Frit: 0 - 3 Vol.%
Lösemittel: 30 - 40 Vol. % Solvent: 30 - 40 vol.%
Si-Pulver: 6 - 10 Vol. % Partikelgröße: 3 - 10 μιτι Si powder: 6 - 10 vol.% Particle size: 3 - 10 μιτι
Im Rahmen fachmännischen Handelns ergeben sich weitere Ausgestaltungen und Ausführungsformen des hier nur beispielhaft beschriebenen Verfahrens. Within the scope of expert action, further refinements and embodiments of the method described here by way of example only arise.
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012202071.3 | 2012-02-13 | ||
| DE102012202071A DE102012202071A1 (en) | 2012-02-13 | 2012-02-13 | Conductive paste and method of manufacturing a semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2013120633A1 true WO2013120633A1 (en) | 2013-08-22 |
Family
ID=47553047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2013/050043 Ceased WO2013120633A1 (en) | 2012-02-13 | 2013-01-03 | Conductive paste and method for producing a semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE102012202071A1 (en) |
| WO (1) | WO2013120633A1 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001313402A (en) * | 2000-04-28 | 2001-11-09 | Kyocera Corp | Paste materials for solar cells |
| US20060289005A1 (en) | 2003-02-11 | 2006-12-28 | Jones Matthew M | Dispensing Apparatus |
| JP2007234537A (en) * | 2006-03-03 | 2007-09-13 | Asahi Glass Co Ltd | Conductor paste and ceramic multilayer substrate manufacturing method |
| US20100269893A1 (en) * | 2009-04-23 | 2010-10-28 | E. I. Du Pont De Nemours And Company | Metal pastes and use thereof in the production of positive electrodes on p-type silicon surfaces |
| WO2012015283A2 (en) * | 2010-07-30 | 2012-02-02 | Lg Innotek Co., Ltd. | Solar cell and paste composition for rear electrode of the same |
-
2012
- 2012-02-13 DE DE102012202071A patent/DE102012202071A1/en not_active Withdrawn
-
2013
- 2013-01-03 WO PCT/EP2013/050043 patent/WO2013120633A1/en not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001313402A (en) * | 2000-04-28 | 2001-11-09 | Kyocera Corp | Paste materials for solar cells |
| US20060289005A1 (en) | 2003-02-11 | 2006-12-28 | Jones Matthew M | Dispensing Apparatus |
| JP2007234537A (en) * | 2006-03-03 | 2007-09-13 | Asahi Glass Co Ltd | Conductor paste and ceramic multilayer substrate manufacturing method |
| US20100269893A1 (en) * | 2009-04-23 | 2010-10-28 | E. I. Du Pont De Nemours And Company | Metal pastes and use thereof in the production of positive electrodes on p-type silicon surfaces |
| WO2012015283A2 (en) * | 2010-07-30 | 2012-02-02 | Lg Innotek Co., Ltd. | Solar cell and paste composition for rear electrode of the same |
Non-Patent Citations (5)
| Title |
|---|
| C. SCHMIGA; M. HÖRTEIS; M. RAUER; K. MEYER; J. LOSSEN; H. J. KROKOSZINSKI; M. HERMLE; S. W. GLUNZ, PROC. OF THE 24TH PVSEC, 2009, pages 1167 |
| DATABASE WPI Week 200222, Derwent World Patents Index; AN 2002-167501, XP002694791 * |
| DATABASE WPI Week 200776, Derwent World Patents Index; AN 2007-809530, XP002694790 * |
| I. MYS.; M. SCHMIDT, PROC. OF THE SPIE, vol. 6107, 2006, pages 610703 |
| J. SCHMIDT, PROGRESS IN PHOTOVOLTAICS, vol. 13, 2005, pages 325 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102012202071A1 (en) | 2013-08-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE60221426T2 (en) | SOLAR CELL WITH BACK CONTACT and METHOD OF MANUFACTURE | |
| DE3612085A1 (en) | SOLAR CELL | |
| EP2583314B1 (en) | Method for producing a metal contact structure of a photovoltaic solar cell | |
| DE102008033169A1 (en) | Process for producing a monocrystalline solar cell | |
| EP2494615A2 (en) | Method for producing solar cells having a selective emitter | |
| DE102012217078B4 (en) | Method for producing a photovoltaic solar cell | |
| WO2010060944A1 (en) | Method for producing a metal contact on a semiconductor substrate provided with a coating | |
| DE102011075352A1 (en) | A method of back contacting a silicon solar cell and silicon solar cell with such backside contacting | |
| EP2561557B1 (en) | Method for producing a solar cell | |
| DE102010024307A1 (en) | Manufacturing method of metallic contact structure of e.g. metal wrap through solar cell, involves applying glass frit pastes to insulating layer on substrate, and making silver pastes to electrically contact substrate indirectly | |
| DE102011104396A1 (en) | Metal paste for solar cell, contains electroconductive metal chosen from chromium, molybdenum, nickel, titanium, and tin, glass frit containing silica, alumina, lead oxide, zinc oxide or boric oxide, and organic binder and/or solvent | |
| EP2671264B1 (en) | Photovoltaic solar cell and a method for the production of same | |
| DE102009008786A1 (en) | Process for producing a solar cell and solar cell | |
| DE112006001767B4 (en) | Process for producing a solar cell element | |
| DE102011055912A1 (en) | Solar cell and method for producing a solar cell | |
| DE102014224679A1 (en) | solar cell | |
| DE102015220945A1 (en) | Method for producing a rear-side contacting of a solar cell and solar cell | |
| EP2465145A2 (en) | Method for producing an emitter electrode for a crystalline silicon solar cell and corresponding silicon solar cell | |
| WO2013120633A1 (en) | Conductive paste and method for producing a semiconductor device | |
| KR20120086406A (en) | Conductive pastes for backside electrodes of solar cell and methods of manufacturing solar cells using the conductive pastes | |
| DE102013219560A1 (en) | Photovoltaic solar cell and method for producing a metallic contacting of a photovoltaic solar cell | |
| DE102013219565A1 (en) | Photovoltaic solar cell and method for producing a photovoltaic solar cell | |
| DE102011086302A1 (en) | Method for producing contact grid on surface of e.g. photovoltaic solar cell for converting incident electromagnetic radiation into electrical energy, involves electrochemically metalizing contact region with metal, which is not aluminum | |
| DE102009040670A1 (en) | Method for producing single side contactable solar cell from semiconductor substrate with n-doping, involves producing n-doped base high doping area at base contacting area in semiconductor substrate | |
| DE102011056632A1 (en) | Method for forming a front side metallization of a solar cell and solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13700130 Country of ref document: EP Kind code of ref document: A1 |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 13700130 Country of ref document: EP Kind code of ref document: A1 |