WO2013111569A1 - Substrate treatment apparatus, liquid supply device used therein, and substrate treatment method - Google Patents

Abstract

This substrate treatment apparatus has a configuration in which a control unit (21) operates a transfer unit (9) to apply a treatment liquid to a substrate (W) from a cassette stage (3) in an application unit (15) and cause a contamination substance to adhere to the substrate (W) in a heat treatment unit (19). Since the treatment liquid containing the contamination substance is applied to the substrate (W) to cause the contamination substance to adhere thereto, the substrate (W) for evaluation, on which contamination in a wet process is reproduced, can be manufactured. Moreover, since the substrate (W) is subjected to heat treatment in the heat treatment unit (19) after the treatment liquid is applied thereto, the substrate (W) for evaluation, which has undergone baking treatment, can be manufactured.

Description

Substrate processing apparatus, liquid supply apparatus used therefor, and substrate processing method

The present invention relates to a semiconductor wafer, a liquid crystal display substrate, a plasma display substrate, an organic EL substrate, an FED (Field-Emission Display) substrate, an optical display substrate, a magnetic disk substrate, a magneto-optical disk substrate, and a photomask. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for processing a substrate and a solar cell substrate (hereinafter simply referred to as a substrate), a liquid supply apparatus used therefor, and a substrate processing method. The present invention relates to a technique for manufacturing a substrate for evaluation by attaching a contaminant to the substrate and a technique for supplying a dispersion containing the contaminant.

Conventionally, as an apparatus of this type, a substrate processing provided with an aerosol generator that supplies air to a standard particle diluent and aerosolizes standard particles, and a particle adhesion tank in which a substrate can be placed inside the aerosol generator. There is an apparatus (for example, refer to Patent Document 1).

This substrate processing apparatus generates a standard particle dilution liquid in an aerosol generator using pure water and standard particle dispersion liquid, and supplies the generated standard particle dilution liquid to a substrate accommodated therein. As a result, a standard contaminated substrate for surface inspection machine calibration and a standard contaminated substrate for cleaning device evaluation are created.

Also, as this kind of method, a fine particle dispersion is prepared, a predetermined amount of this fine particle dispersion is taken out with a pipette, this fine particle dispersion is divided and arranged on the surface of the substrate with a pipette, and this substrate is heated. In some cases, a substrate for evaluation is produced by evaporating the solvent of the fine particle dispersion (for example, see Patent Document 2).

This method allows fine particles to adhere to the surface of the substrate in a non-uniform pattern, so that by observing the pattern after cleaning, it is possible to determine secondary contamination to which fine particles adhere due to an unexpected event. Therefore, it is possible to perform an appropriate evaluation of the cleaning apparatus or the like by performing processing using the prepared evaluation substrate.

JP 7-335515 A JP-A-9-266189

However, the conventional example having such a configuration has the following problems.
Semiconductor manufacturing is roughly divided into a dry process and a wet process, and the ratio is about 1: 1 at present. In these steps, there is a possibility that particles that cause a deterioration in device performance and a decrease in yield are attached. However, in the conventional apparatus, particles are attached to the substrate by aerosol to produce an evaluation substrate, so that only an evaluation substrate to which particles are attached in a dry state can be produced. Therefore, there is a problem that an evaluation substrate used for evaluation of the wet process cannot be manufactured.

By the way, in the semiconductor manufacturing process, for example, there is a baking process in which the temperature of the substrate is raised to around 100 ° C., for example. The substrate is often coated with an organic film such as a photoresist film. When baking is performed in this state, the adhesion of particles adhering to the organic film can cause the organic film to melt or solidify. To become stronger. Also, when the particles themselves are organic, they are strengthened by baking. Therefore, it is more difficult to remove particles from a substrate that has been baked, but it is difficult to produce an evaluation substrate that has been baked by a conventional apparatus.

In addition, the conventional method requires a fine particle dispersion to be attached to the surface of the substrate using a pipette, and it takes a long time to produce the evaluation substrate, and there is a variation in the degree of adhesion of the fine particles on the surface of the evaluation substrate. There is a problem of growing. In this conventional method, drying is performed to evaporate the solvent. However, the temperature is lower than the heating temperature in the baking process, and the adhesion of particles in the baking process cannot be reproduced.

In addition, in the conventional apparatus, before supplying the dispersion liquid to the substrate, the number of particles to be attached to the substrate is adjusted by adjusting the amount of pure water or air directly supplied to the dispersion liquid. . In the conventional method, the particle concentration is adjusted by introducing particles into a dispersion having a known particle concentration in the liquid. In other words, the conventional apparatus and the conventional method have the problem that the number of particles is adjusted directly with respect to the stock solution of the dispersion, so that the adjustment is very difficult. That is, in order to lower the concentration, it is necessary to add a large amount of liquid to the stock solution of the dispersion, and in order to increase the concentration, it is necessary to add a large amount of the stock solution of the dispersion.

Also, the surface of the substrate has characteristics of hydrophilicity that makes it easy to wet pure water and hydrophobicity (for example, an organic film such as a photoresist film) that makes it easy to play pure water and makes it difficult to get wet. When the surface of the substrate is hydrophilic, the processing liquid in which the contaminant is dispersed in pure water is supplied to the substrate, and the substrate is rotated and dried to substantially distribute the contaminant on the entire surface of the substrate. Can be uniform. Therefore, if a processing solution having a low concentration of the contaminant is supplied to the substrate, the contaminant can be sparsely and evenly adhered to the entire surface. If a processing solution having a high concentration of the contaminant is supplied to the substrate, the contamination The substance can be adhered to the entire surface densely and evenly. However, when the surface of the substrate is hydrophobic, the treatment liquid cannot uniformly cover the entire surface of the substrate, and thus there is a problem that the contaminant cannot be uniformly adhered to the entire surface of the substrate. For this reason, in the wet type as described above, since the contaminants cannot be attached to the entire surface of the hydrophobic substrate, it is not possible to produce a wet process evaluation substrate with the hydrophobic substrate.

The present invention has been made in view of such circumstances, and provides a substrate processing apparatus that can be used for evaluation in a wet process and can produce a substrate for evaluation that has undergone a baking process. The purpose is to do.

Another object of the present invention is to provide a liquid supply apparatus that can easily adjust the concentration of a contaminant.

It is another object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of producing an evaluation substrate that can be used for evaluation of a wet process even if it is a hydrophobic substrate.

In order to achieve such an object, the present invention has the following configuration.
That is, according to the present invention, in a substrate processing apparatus for applying a contaminant to a substrate, an unprocessed substrate is supplied, a substrate supply storage unit for storing a processed substrate, and a process in which a contaminant is dispersed A liquid supply unit that supplies a liquid, a coating unit that applies a processing liquid supplied from the liquid supply unit, and a substrate on which the processing liquid is applied are heat-treated with respect to the substrate supplied from the substrate supply storage unit A heat treatment unit, the substrate supply and storage unit, the coating unit, and a transport unit that transports the substrate between the heat treatment units are provided.

[Operation / Effect] According to the present invention, the treatment liquid is applied to the substrate from the substrate supply and storage unit in the coating unit, and the contaminant is adhered to the substrate in the heat treatment unit. Since the substrate is coated with a processing solution containing a contaminant, and the contaminant is attached, an evaluation substrate that reproduces the contamination in the wet process can be produced. In addition, since the substrate is subjected to heat treatment in the heat treatment section after application of the treatment liquid, an evaluation substrate that has undergone baking treatment can be manufactured.

Further, in the present invention, a cleaning unit that cleans the substrate, and a control that causes the substrate supplied from the substrate supply and storage unit to be cleaned by the cleaning unit and then applied to the cleaned substrate by the coating unit. It is preferable to further comprise a part.

The control unit can initialize the degree of contamination of the substrate by cleaning the substrate supplied from the substrate supply and storage unit by the cleaning unit. Therefore, the substrate can be controlled to a desired degree of contamination by subsequently applying the treatment liquid at the application unit.

In the present invention, the measurement unit that measures the contamination level of the substrate and the control unit may cause the measurement unit to measure the contamination level of the substrate before the application unit performs application, and the application unit may It is preferable to further include a control unit that causes the measurement unit to measure the degree of contamination of the substrate after the application.

By comparing the measurement results of the measurement part before and after application of the treatment liquid, it can be confirmed that the desired degree of contamination has been achieved. Moreover, the ability of the cleaning process or the like can be determined based on the measurement result after application.

Further, in the present invention, the control unit cleans the substrate with the cleaning unit when the contamination level of the substrate does not match the target value as a result of the measurement with the measurement unit after coating with the coating unit. It is preferable that the processing liquid of the liquid supply unit is prepared to perform measurement by the measurement unit and application by the application unit.

If the contamination level of the substrate does not match the target value, the substrate is cleaned and initialized by the cleaning unit, the treatment liquid of the liquid supply unit is prepared, and the contaminant is applied to the substrate by measurement and application. Apply. Therefore, an evaluation substrate having a desired degree of contamination can be produced.

In the present invention, it is preferable that the heat treatment unit includes a heating unit for heating the substrate and a cooling unit for cooling the substrate.

By heating in the heating unit, the contaminant for the treatment liquid can be fixed on the substrate, and by cooling in the cooling unit, it can be quickly moved to the processing apparatus to be evaluated such as cleaning. Moreover, since it heats with a heating part, the contamination in a baking process can be evaluated.

In the present invention, the liquid supply unit stores a dispersion tank in which a contaminant is dispersed in a liquid, and a dilution tank that dilutes the dispersion liquid generated in the dispersion tank and stores it as a processing liquid. Are preferably provided.

In the dispersion tank, the dispersion liquid in which the contaminant is dispersed is stored, and in the dilution tank, the dispersion liquid generated in the dispersion tank is diluted to store the treatment liquid. Since the dispersion is diluted in the dilution tank, the treatment liquid can be easily adjusted to a desired concentration of the contaminant.

Further, in the present invention, the application unit includes a pre-dispensing unit that discharges a predetermined amount of the processing liquid at a standby position before supplying the processing liquid to an unprocessed substrate, and the processing liquid discharged from the pre-dispensing unit. A concentration measuring unit for measuring the concentration of the pollutant in the liquid supply unit, when the measurement result in the concentration measuring unit is inconsistent with the target concentration, from the dispersion tank to the dilution tank It is preferable to adjust the concentration of the contaminants by replenishing the dispersion or replenishing the dilution tank with liquid.

The concentration of the pollutant is measured by the concentration measuring unit for the processing liquid discharged from the pre-dispensing unit in the coating unit, and the concentration of the pollutant is adjusted according to the result. Therefore, the degree of contamination of the substrate can be made accurate. Further, the concentration is adjusted by replenishing the dispersion liquid from the dispersion tank to the dilution tank or replenishing the liquid to the dilution tank. Therefore, since the concentration is not adjusted directly with respect to the dispersion, but is adjusted with respect to the diluted solution in the dilution tank, the concentration of the contaminant can be easily adjusted.

Further, in the present invention, the dispersing tank is configured to be rotatable about a vertical axis at the center portion and a plurality of insertion ports on the outer peripheral side from the center portion. A dropping mechanism that is provided at each insertion port of the rotating plate and expands and contracts an inner peripheral surface of each insertion port of the rotating plate toward a central portion of each insertion port; and And a drive unit for positioning any one of the insertion ports, and a stock solution container for storing a stock solution of a dispersion liquid containing a contaminant is disposed in each of the insertion ports so that the discharge port faces downward of the insertion port. In the state where the control unit is operated and moved so that the desired stock solution container is located at the input port, the control unit operates the dropping mechanism to contaminate the dispersion tank. It is preferable to add a stock solution of the dispersion containing the substance for use (claim 8).

A stock solution container having a different concentration can be placed at each insertion port of the rotating plate. Therefore, the control unit operates the driving unit to rotate the rotating plate and operate the dropping mechanism so that the stock solution container having a desired concentration is located at the inlet, thereby operating the concentration of the dispersion in the dispersion tank over a wide range. Can be adjusted. Moreover, it is only necessary to rotate the rotating plate so that the stock solution container having a desired concentration is located at the inlet, and adjustment in the dispersion tank can be made relatively easy.

Further, the present invention provides a liquid supply apparatus for supplying a treatment liquid containing a contaminant to a substrate, a dispersion tank for storing a dispersion liquid in which the contaminant is dispersed in the liquid, and the dispersion tank. A dilution tank for diluting the dispersion liquid to store the processing liquid, a supply means for supplying the processing liquid from the dilution tank to the substrate, replenishment of the dispersion liquid from the dispersion tank to the dilution tank, or to the dilution tank And a control unit that adjusts the concentration of the pollutant by replenishing the liquid.

[Operation / Effect] According to the present invention, the processing liquid supplied from the supply means is contaminated by the controller replenishing the dispersion liquid from the dispersion tank to the dilution tank or replenishing the liquid to the dilution tank. The substance concentration can be adjusted. Therefore, since the concentration is not adjusted directly with respect to the dispersion, but is adjusted with respect to the diluted solution in the dilution tank, the concentration of the contaminant can be easily adjusted.

Further, in the present invention, the dispersing tank is configured to be rotatable about a vertical axis at the center portion and a plurality of insertion ports on the outer peripheral side from the center portion. A dropping mechanism that is provided at each insertion port of the rotating plate and expands and contracts an inner peripheral surface of each insertion port of the rotating plate toward a central portion of each insertion port; and And a drive unit for positioning any one of the insertion ports, and a stock solution container for storing a stock solution of a dispersion liquid containing a contaminant is disposed in each of the insertion ports so that the discharge port faces downward of the insertion port. In the state where the control unit is operated and moved so that the desired stock solution container is located at the input port, the control unit operates the dropping mechanism to contaminate the dispersion tank. It is preferable to add a stock solution of the dispersion containing the substance for use.

A stock solution container having a different concentration can be placed at each insertion port of the rotating plate. Therefore, the control unit operates the driving unit to rotate the rotating plate and operate the dropping mechanism so that the stock solution container having a desired concentration is located at the inlet, thereby operating the concentration of the dispersion in the dispersion tank over a wide range. Can be adjusted. Moreover, it is only necessary to rotate the rotating plate so that the stock solution container having a desired concentration is positioned at the inlet, and adjustment in the dispersion tank can be made relatively easy.

The present invention also provides a substrate processing apparatus for attaching a contaminant to a hydrophobic substrate, a rotating means for holding the hydrophobic substrate in a horizontal position and rotating the hydrophobic substrate in a horizontal plane; A low surface tension treatment liquid supply means for supplying a low surface tension treatment liquid containing a contaminant to the upper surface of the substrate, and an inert gas atmosphere is formed on the upper surface of the hydrophobic substrate held by the rotation means An inert gas atmosphere forming means, and a treatment liquid is supplied from the low surface tension treatment supply means to the upper surface of the hydrophobic substrate held by the rotating means to the entire upper surface of the hydrophobic substrate. In a state where an inert gas atmosphere is formed by the inert gas atmosphere forming means by supplying a treatment liquid, by rotating the hydrophobic substrate by the rotating means and drying the treatment liquid supplied to the upper surface, Hydrophobic It is characterized in that the deposition of contaminating substance on the entire upper surface of the substrate.

[Operation / Effect] According to the present invention, the low surface tension treatment liquid is supplied to the upper surface of the hydrophobic substrate held by the rotating means. The substance can be applied to the entire top surface of the hydrophobic substrate. Then, in a state where the inert gas atmosphere is formed by the inert gas atmosphere forming means, the low surface tension treatment liquid is dried, and the contaminant is adhered to the entire upper surface of the hydrophobic substrate. At this time, since it is dried in an inert gas atmosphere, the substance from the substrate and oxygen are eluted into the low surface tension treatment liquid, and the occurrence of a watermark due to the generation of a substance different from the contaminant is suppressed. it can. Therefore, even if it is a hydrophobic substrate, an evaluation substrate that can be used for evaluation of the wet process can be produced, and the accuracy of the degree of contamination can be made accurate.

Further, in the present invention, the inert gas atmosphere forming means can be moved up and down over a standby position separated above the rotating means and a processing position close to the upper surface of the hydrophobic substrate held by the rotating means. Preferably, the inert gas atmosphere forming means is moved to the processing position when drying the low surface tension processing liquid.

Since the inert gas atmosphere forming means moves to the processing position during drying, the amount of inert gas necessary to form the inert gas atmosphere can be reduced.

Further, in the present invention, the inert gas atmosphere forming means includes a rotating plate that is rotatable around a vertical axis in synchronization with the rotating means, and is formed on the rotating plate, and is inert gas toward the hydrophobic substrate. It is preferable to provide an injection port for injecting the gas.

Since the rotating plate rotates in synchronization with the rotating means, an inert gas atmosphere can be stably formed by supplying an inert gas from the injection port, and surrounding air is not entrained.

In the present invention, it is preferable that the low surface tension treatment liquid supply means includes a supply port for supplying the low surface tension treatment liquid from the center of the lower surface of the rotating plate toward the upper surface of the hydrophobic substrate. .

Since the low surface tension treatment liquid is supplied from the supply port of the rotating plate, a separate nozzle is unnecessary, the configuration can be simplified, and the apparatus cost can be reduced.

In the present invention, the low surface tension treatment liquid supply means preferably supplies an organic solvent as the low surface tension treatment liquid.

Drying time can be shortened during the drying process, and processing efficiency can be improved.

The present invention also provides a substrate processing method in which a contaminant is attached to a hydrophobic substrate by supplying a mist of a processing solution to the entire surface of the hydrophobic substrate. A coating process for coating the substance, and a drying process for drying the mist of the processing solution supplied to the entire surface of the hydrophobic substrate to attach a contaminant to the entire surface of the hydrophobic substrate. It is a feature.

[Operation / Effect] According to the present invention, the contaminant is applied to the entire surface of the hydrophobic substrate in the coating process, and the contaminant is attached to the entire surface of the hydrophobic substrate in the drying process. In the coating process, since the contaminant is attached through the mist of the treatment liquid, the mist can be evenly applied to the entire surface of the substrate even if it is a hydrophobic substrate. Therefore, even if the substrate is hydrophobic, an evaluation substrate that reproduces the adhesion of contaminants in the wet process can be produced.

In the present invention, it is preferable that the coating process supplies a mist of a processing solution containing a contaminant to the entire surface of the hydrophobic substrate.

Since the mist of the processing solution containing the contaminant is supplied, the contaminant can be applied with a single supply. Further, since the contamination substance is attached by the treatment liquid containing the contamination substance, a state very close to the contamination in the wet process can be reproduced.

Further, in the present invention, the coating process includes a mist supply process for supplying a mist of a processing solution over the entire surface of the hydrophobic substrate, and a spraying process for spraying a contaminant to the upper side of the hydrophobic substrate. Preferably it is.

Suppose that the mist of only the treatment liquid is supplied in the mist supply process, and the contaminant is sprayed upward in the spray process, so that the contaminant can be taken into the mist of the treatment liquid on the hydrophobic surface. Thus, the contaminant can be applied on the hydrophobic surface of the substrate.

The present invention also provides a substrate processing apparatus for attaching a contaminant to a hydrophobic substrate, a mounting table on which the hydrophobic substrate is mounted, and the entire surface of the hydrophobic substrate mounted on the mounting table. By supplying a mist of the processing solution to the substrate, a coating means for applying a contaminant to the entire surface of the hydrophobic substrate, and a processing solution applied to the entire surface of the hydrophobic substrate by the coating means are dried to make the hydrophobic substrate And a drying means for adhering a contaminant to the entire surface of the conductive substrate.

[Operation / Effect] According to the present invention, the mist of the processing liquid is supplied to the entire surface of the hydrophobic substrate mounted on the mounting table by the applying means, and the applied processing liquid is dried by the drying means. A contaminant can be attached to the entire surface of the hydrophobic substrate. Since the contaminant is attached by the application means through the mist of the treatment liquid, the mist can be applied evenly over the entire surface of the hydrophobic substrate. Therefore, even if the substrate is hydrophobic, an evaluation substrate that reproduces the adhesion of contaminants in the wet process can be produced.

In the present invention, it is preferable that the coating means is a contaminant-containing treatment liquid mist forming means for supplying a mist of a treatment liquid containing a contaminant to the entire surface of the hydrophobic substrate.

Since the mist of the treatment liquid containing the contamination substance is supplied by the contamination substance-containing treatment liquid mist making means, the contamination substance can be applied with a single supply.

In the present invention, the coating means includes a processing liquid mist forming means for supplying a mist of the processing liquid to the entire surface of the hydrophobic substrate, and a spraying means for spraying a contaminant to the upper side of the hydrophobic substrate. It is preferable.

By supplying the mist of only the processing liquid with the application means and spraying the contaminants upward with the spraying means, the contaminants can be taken into the mist of the processing liquid on the hydrophobic surface. Thus, the contaminant can be applied on the hydrophobic surface of the substrate.

In the present invention, it is preferable to further include a chamber surrounding the mounting table.

Because the chamber can prevent the introduction of substances other than contaminants, an evaluation substrate can be accurately produced.

In the present invention, the drying means is preferably a heating means attached to the mounting table.

Since the entire substrate is heated by the heating means, the mist on the hydrophobic surface can be dried in a short time, and the production time of the evaluation substrate can be shortened.

According to the substrate processing apparatus of the present invention, the control unit operates the transport unit to apply the processing liquid to the substrate from the substrate supply and storage unit in the coating unit, and the contaminant is applied to the substrate in the heat processing unit. Adhere. Since the substrate is coated with a treatment liquid containing a contaminant, and the contaminant is attached, an evaluation substrate that reproduces the contamination in the wet process can be produced. In addition, since the substrate is subjected to heat treatment in the heat treatment section after application of the treatment liquid, an evaluation substrate that has undergone baking treatment can be manufactured.

1 is a plan view illustrating a schematic configuration of a substrate processing apparatus according to a first embodiment. It is a figure which shows schematic structure of an application part and a liquid supply apparatus. It is a perspective view which shows schematic structure of a stock solution container. It is a perspective view which shows schematic structure of a stock solution injection | throwing-in mechanism. It is a graph which shows the relationship between the elapsed time from sample preparation in this example and a prior art example, and the removal rate of the contaminant. It is a graph which shows the relationship between the sample preparation date of a present Example, and the removal rate of the contaminant. It is a graph which shows the relationship between the sample preparation date in the sample which did not perform a baking process, and the removal rate of the contaminant. It is a graph which shows the relationship between bake temperature and the removal rate of the contaminant. 5 is a schematic configuration diagram of a substrate processing apparatus according to Embodiment 2. FIG. It is a schematic diagram which shows the supply state of a low surface tension processing liquid. It is a schematic diagram which shows the state which spreads a low surface tension process liquid to the whole upper surface of a board | substrate. It is a schematic diagram which shows the state which moved the shielding board from the standby position to the processing position. It is a schematic diagram which shows the state of a drying process. FIG. 6 is a schematic configuration diagram illustrating an entire substrate processing apparatus according to a third embodiment. (A)-(c) is the schematic diagram which showed the process concerning the preparation method 1 of the board | substrate for evaluation. (A)-(d) is the schematic diagram which showed the process concerning the preparation method 2 of the board | substrate for evaluation.

Hereinafter, various embodiments of the present invention will be described.

Embodiment 1 of the present invention will be described below with reference to the drawings.
FIG. 1 is a plan view illustrating a schematic configuration of the substrate processing apparatus according to the first embodiment.

The substrate processing apparatus 1 according to the present embodiment includes an indexer 5 including a pair of cassette stages 3, a substrate delivery unit 7, a transport unit 9, a cleaning unit 11, a measuring unit 13, a coating unit 15, and a liquid supply. An apparatus 17, a heat treatment unit 19, and a control unit 21 are provided.

The cassette C is a container that can receive and stack a plurality of substrates W. The cassette C accommodates unprocessed substrates W and processed substrates W, and is transported and moved to the apparatus in each step together with the plurality of substrates W in that state. The pair of cassette stages 3 includes a placement portion 3a for placing a cassette C in which an unprocessed substrate W is accommodated, and a placement portion for placing a cassette C in which a processed substrate W is accommodated. 3b.

The indexer 5 includes a robot R that can move along the cassette stage 3. The indexer 5 takes out the substrate W from the cassette C that stores the unprocessed substrate W by a hand (not shown) of the robot R, and the substrate W in the cassette C. Only the substrate W is taken out, and only the substrate W is transferred to the substrate delivery unit 7. Further, the indexer 5 receives the processed substrate W from the substrate delivery unit 7 and stores the processed substrate W in the cassette C.

The substrate delivery unit 7 includes a delivery table 23 accessible from both the indexer 5 side and the transport unit 9 side. The substrate delivery unit 7 places the unprocessed substrate W delivered from the indexer 5 on the delivery table 23 and delivers the substrate W to the transport unit 9. The substrate delivery unit 7 places the processed substrate W delivered from the transport unit 9 on the delivery table 23 and delivers the substrate W to the indexer 5.

The transfer unit 9 has a robot CR provided with a transfer arm 25 that can turn and move back and forth. The transport unit 9 transports the substrates W one by one between the substrate delivery unit 7, the cleaning unit 11, the measurement unit 13, the coating unit 15, and the heat treatment unit 19 by the transport arm 25. Deliver.

The cleaning unit 11 receives an unprocessed substrate W from the transport unit 9 and performs a cleaning process on the substrate W. For example, the cleaning unit 11 cleans the processing surface of the substrate W by applying a brush and a cleaning liquid to the substrate W. The substrate W that has been subjected to the cleaning process is carried out to the measurement unit 13 by the transport unit 9.

The measuring unit 13 measures the cleanliness on the processing surface of the substrate W cleaned by the cleaning unit 11. The measurement unit 13 measures the number of foreign matters adhering to the processing surface of the substrate W using, for example, a laser scattering type surface inspection machine. The measuring unit 13 also measures the number of foreign matters (contamination substances) adhering to the processing surface of the substrate W that has passed through the coating unit 15 and the heat treatment unit 19.

The application unit 15 applies a contaminant to the treated surface of the substrate W that has been cleaned and measured. The liquid supply device 17 supplies a treatment liquid in which a contaminant is dispersed to the application unit 15. Details of the coating unit 15 and the liquid supply device 17 will be described later.

The heat treatment unit 19 performs a heat treatment on the substrate W coated with the contaminant by the application unit 15. Specifically, the bake unit 27 and the cooling unit 29 are provided in two stages. The bake unit 27 heats the substrate W to a predetermined temperature. The predetermined temperature is, for example, in the range of about 100 ° C. to 140 ° C., and preferably about 110 ° C. However, since the removal rate of the contaminants attached to the substrate W varies depending on the heating temperature, it is appropriately heated according to the cleaning method and the cleaning apparatus to be evaluated. It is preferable to heat at different temperatures. The cooling unit 29 cools the substrate W heated by the bake unit 27 to a predetermined temperature. The predetermined temperature is, for example, about room temperature (25 ° C.).

The control unit 21 incorporates a CPU and a memory, and comprehensively controls the above-described units such as the operation of the robot CR and the application unit 15. A memory (not shown) stores in advance a table indicating the correspondence between the position of the mounting opening 107 on the rotating plate 101 to be described later and the type and concentration of the contaminating substance in the stock solution container 91 mounted in each mounting opening 107. Further, in a memory (not shown), the target concentration of the contamination substance in the diluted solution and the contamination level that is the target of the contamination substance after application are set in advance.

The above-described indexer 5 corresponds to the “substrate supply storage unit” in the present invention, the liquid supply device 17 corresponds to the “liquid supply unit” in the present invention, and the bake unit 27 corresponds to the “heating unit” in the present invention. The cooling unit 29 corresponds to the “cooling section” in the present invention.

Referring now to FIG. In addition, FIG. 2 is a figure which shows schematic structure of an application part and a liquid supply apparatus.

The application unit 15 is a so-called single-wafer type apparatus, and sequentially processes the substrates W one by one. The application unit 15 includes a spin chuck 31, a rotary shaft 33, an electric motor 35, a splash prevention cup 37, a discharge nozzle 39, a cup cleaning nozzle 41, a pre-dispensing unit 43, a supply pipe 45, and an on-off valve. 47.

The spin chuck 31 holds the substrate W rotatably in a horizontal posture. The rotating shaft 33 has one end attached to the lower portion of the spin chuck 31 and the other end attached to the rotating shaft of the electric motor 35. When the electric motor 35 is driven to rotate, the rotating shaft 33 and the spin chuck 31 rotate, and the substrate W held by the spin chuck 31 is rotated in a horizontal plane.

The scattering prevention cup 37 is provided so as to surround the side and the lower side of the spin chuck 31. The anti-scattering cup 37 receives the processing liquid scattered around from the rotating substrate W and discharges it as drainage. The anti-scattering cup 37 and the spin chuck 31 are configured to be able to move up and down relatively. When the substrate W before application is placed on the spin chuck 31 or when the substrate W after application is dispensed from the spin chuck 31, the spin chuck 31 and the anti-scattering cup 37 move up and down relatively.

The discharge nozzle 39 discharges the processing liquid in which the contaminant is dispersed to the substrate W. The discharge nozzle 39 is configured such that a tip portion for discharging the processing liquid can swing between a “discharge position” near the rotation center of the substrate W and a “standby position” corresponding to the side of the anti-scattering cup 37. Yes. The discharge nozzle 39 is connected to one end side of the supply pipe 45 at its base end. From the other end side of the supply pipe 45, a processing liquid in which a contaminant is dispersed is supplied. The supply of the processing liquid is controlled by an on-off valve 47 provided in the supply pipe 45.

A pre-dispensing unit 43 is provided at the standby position of the discharge nozzle 39. The pre-dispensing unit 43 discharges a predetermined amount of processing liquid from the discharge nozzle 39 before discharging the processing liquid onto the substrate W. The pre-dispensing unit 43 includes a concentration measuring unit 49 that measures the concentration of the contaminant contained in the processing liquid when the discharged processing liquid flows down. The measured result is fed back to the control unit 21.

The cup cleaning nozzle 41 discharges a cleaning liquid for dissolving and removing the processing liquid scattered and adhering to the inner wall of the anti-scattering cup 37. When the treatment liquid adheres to the scattering prevention cup 37 and solidifies, the contaminants scatter from there and adhere to the substrate W. Therefore, it is preferable to periodically clean the inner wall of the prevention cup 37 with the cup cleaning nozzle 41. As a result, the number of contaminants adhered to the substrate W can be accurately controlled over a long period of time.

The liquid supply device 17 is connected to the other end of the supply pipe 45 communicated with the discharge nozzle 39, and supplies a treatment liquid in which a contaminant is dispersed.

The liquid supply device 17 is roughly provided with a dispersion tank 51 and a dilution tank 53.

Dispersion tank 51 prepares and stores a dispersion by dispersing contaminants in the liquid. The dilution tank 53 dilutes the dispersion produced in the dispersion tank 51 and stores it as a treatment liquid. The dispersion tank 51 is formed with an input port 55 communicating with the internal space at the top thereof. The stock inlet 55 is provided with a stock solution feed mechanism 57. Although the details will be described later, the stock solution feeding mechanism 57 is a mechanism for feeding a stock solution of a dispersion containing a contaminant.

The bottom of the dispersion tank 51 and the upper part of the dilution tank 53 are connected in communication by a connection pipe 59. An open / close valve 61 is attached to the connecting pipe 59. The connecting pipe 59 supplies the dispersion liquid in the dispersion tank 51 to the dilution tank 53. The supply amount is performed by the control unit 21 operating the on-off valve 61. One end of a pure water supply pipe 63 is connected to the upper part of the dispersion tank 51 and the dilution tank 53. The other end of the pure water supply pipe 63 is connected to a pure water supply source. An opening / closing valve 65 is provided on the dispersion tank 51 side of the pure water supply pipe 63, and an opening / closing valve 67 is provided on the dilution tank 53 side of the pure water supply pipe 63.

One end side of a nitrogen gas supply pipe 69 is connected to the upper part of the dispersion tank 51 and the dilution tank 53. The other end of the nitrogen gas supply pipe 69 is connected to a nitrogen gas supply source. An open / close valve 71 is provided on the dispersion tank 51 side of the nitrogen gas supply pipe 69, and an open / close valve 73 is provided on the dilution tank 53 side of the nitrogen gas supply pipe 69. In the nitrogen gas supply pipe 69, one end side of the pressure relief pipe 75 is connected to the downstream side of the on-off valves 71 and 73. The other end side of the pressure relief pipe 75 is open to the atmosphere. An opening / closing valve 77 is provided on the dispersion tank 51 side of the pressure releasing pipe 75, and an opening / closing valve 79 is provided on the dilution tank 53 side of the pressure releasing pipe 75. The dilution tank 53 is inserted through the other end of the supply pipe 45 described above.

The dispersion tank 51 and the dilution tank 53 are connected to one end side of the drainage pipe 81 at the bottom. The other end of the drainage pipe 81 is connected to a drainage processing unit (not shown). The drainage pipe 81 includes an opening / closing valve 83 on the dispersion tank 51 side and an opening / closing valve 85 on the dilution tank 53 side. The dispersion tank 51 includes a stirring unit 87 at the bottom, and the dilution tank 53 includes a stirring unit 89 at the bottom. The stirring unit 87 has a function of stirring the liquid stored therein, and performs stirring by bubbling nitrogen gas, for example.

Next, refer to FIG. 3 and FIG. 3 is a perspective view showing a schematic configuration of the stock solution container, and FIG. 4 is a perspective view showing a schematic configuration of the stock solution charging mechanism 57. As shown in FIG.

The stock solution container 91 stores a stock solution of a dispersion containing a pollutant at a predetermined concentration. The undiluted solution container 91 includes a trunk portion 93 made of an elastic member, and a conical portion 95 formed at the lower portion of the trunk portion 93. A discharge port 97 is formed at the lower end of the conical portion 95. As shown by a two-dot chain line in FIG. 3, when the outer peripheral surface of the body portion 93 is pressed and deflected toward the center portion, a predetermined amount of the stock solution of the dispersion liquid containing the contaminant is dropped from the discharge port 97. Is done. A flange 99 is formed in the vicinity of the boundary between the trunk portion 93 and the conical portion 95. The flange 99 is locked when the stock solution container 91 is placed in a hole having a diameter larger than the outer diameter of the conical portion 95 and smaller than the outer diameter of the flange 99.

Examples of the contaminant include polystyrene latex called PSL (Polystyrene Latex), and fine particles of silicon oxide (SiO ₂ ) and silicon nitride (SiN). In particular, since PSL is widely used as standard particles, it is easily available and suitable. The stock solution container 91 stores a stock solution of a dispersion obtained by dispersing the above-described contaminants in pure water at a predetermined concentration. It is preferable that a plurality of stock solution containers 91 are prepared, and that the type, particle size, and concentration of the contaminant are different for each stock solution container 91.

The stock solution feeding mechanism 57 is set with the stock solution container 91 described above, and feeds the stock solution from any of the stock solution containers 91 into the dispersion tank 51. The stock solution charging mechanism 57 includes a rotating plate 101, a driving unit 103, and a dropping mechanism 105.

The rotating plate 101 is formed with eight mounting ports 107 penetrating in the vertical direction on the outer peripheral side of the center of rotation. The mounting opening 107 has a locking projection 109 formed near the center in the height direction. The inner diameter of the locking projection 109 is larger than the outer diameter of the conical portion of the stock solution container 91 and smaller than the outer diameter of the flange 99. The drive unit 103 is provided at the lower part of the center of the rotating plate 101 and rotates the rotating plate 101 around the vertical axis. The dropping mechanism 105 is embedded in the upper inner surface of the mounting opening 107. The dropping mechanism 105 is configured to be able to advance and retreat on the inner peripheral surface of the mounting opening 107 toward the center side thereof. Specifically, the member that presses the trunk portion 93 of the stock solution container 91 is configured to advance and retract with respect to the central portion of the mounting opening 107 in plan view.

The control unit 21 knows in advance which concentration of the stock solution container 91 is set in which mounting port 107 by referring to a memory (not shown). Therefore, the driving unit 103 is operated to place the stock solution container 91 having a desired concentration at the charging port 55 of the dispersion tank 51 and the dropping mechanism 105 is operated to feed the stock solution having a desired concentration into the dispersion tank 51. It is like that.

Note that the above-described mounting port 107 corresponds to the “insertion port” in the present invention.

Next, production of the substrate W for cleaning evaluation by the substrate processing apparatus 1 having the above-described configuration will be described.

The control unit 21 sequentially transports a plurality of unprocessed substrates W in the cassette C placed on the placement unit 3 a in the indexer 5 to the delivery table 23 of the substrate delivery unit 7. The robot CR first transports the substrate W placed on the delivery table 23 by the transport arm 25 to the cleaning unit 11.

The cleaning unit 11 cleans the loaded substrate W and cleans the processing surface of the substrate W. As a result, the processing surface of the substrate W that will be contaminated with the contaminant is reset.

Next, the robot CR takes out the substrate W cleaned by the cleaning unit 11 with the transfer arm 25 and then transfers it to the measurement unit 13. The measurement unit 13 measures the cleanliness of the processed surface of the substrate W taken in. At this time, when the cleanliness is lower than the predetermined cleanliness, the cleanliness is conveyed again to the cleaning unit 11 and cleaned again. When the cleanliness satisfies a predetermined cleanliness, the transport arm 25 transports the substrate W to the coating unit 15.

In addition, before the coating process in the coating unit 15, the liquid supply device 17 prepares the following processing liquid in advance for coating and adjusts the concentration of the contaminant.

First, the opening / closing valve 65 is operated to store a predetermined amount of pure water in the dispersion tank 51. Next, the stock solution feeding mechanism 57 is operated so that the stock solution container 91 that stores the stock solution of the dispersion for pollutants is positioned directly above the feed port 55. Then, the dropping mechanism 105 is operated to drop a predetermined amount of the stock solution from the stock solution container 91 into the dispersion tank 51. At this time, in order to make the concentration uniform in the dispersion tank 51 by operating the stirring unit 87, it is preferable to stir the dispersion tank 51. Thereby, the dispersion liquid was able to be prepared. The concentration of the dispersion is set to a value sufficiently higher than the target concentration of the treatment liquid supplied to the substrate and applied. Next, after opening the on-off valve 61, the on-off valve 71 is operated to feed nitrogen gas into the dispersion tank 51. As a result, the necessary amount of the dispersion liquid containing the contaminants stored in the dispersion tank 51 is supplied to the dilution tank 53. In the dilution tank 53, the control unit 21 measures the concentration of the pollutant with a concentration meter (not shown), and operates the on-off valve 67 according to the result to supply pure water to lower the concentration, 61 is operated to increase the concentration by supplying the dispersion. At this time, it is preferable to operate the stirring unit 89 in order to make the concentration of the diluted solution uniform in the tank. When the concentration reaches the target concentration as the processing liquid, the preparation of the processing liquid is completed. Thereafter, the control unit 21 operates the coating unit 15 to perform coating on the substrate W.

In order to approximate the actual state of contamination in the semiconductor process, for example, PSL is stored as the stock solution container 91, and at least two kinds of particle diameters of at least 49 nm and 70 nm are mixed. It is preferable to prepare the dispersion liquid in the dispersion tank 51 by using the stock solution container 91.

The application unit 15 places the substrate W on the spin chuck 31 and positions the discharge nozzle 39 on the pre-dispense unit 43. Then, a small amount of processing liquid is discharged. Then, based on the result measured by the concentration measurement unit 49, the control unit 21 determines whether to perform coating as it is or to adjust the concentration of the contaminant for the treatment liquid.

When the density is the target density, the ejection nozzle 39 is moved to the ejection position. Then, the processing liquid is supplied to the stationary substrate W. The supply amount of the processing liquid is, for example, about 10 cc. Thereafter, the electric motor 35 is operated to rotate the substrate W at a predetermined rotation speed. The rotational speed at this time is, for example, about 500 rpm, thereby spreading the processing liquid supplied from the central portion of the substrate W to the outer peripheral portion of the substrate W and shaking off the excess processing liquid with centrifugal force. Thereafter, the electric motor 35 is switched to high speed rotation, and the pure water which is the solvent of the processing liquid supplied to the substrate W is shaken off and dried. The high-speed rotation at this time is, for example, about 2500 rpm. After stopping the rotation of the electric motor 35, the robot CR transports the substrate W to the bake unit 27 by the transport arm 25.

The baking unit 27 heats the substrate W on which the contaminant is adhered to the processing surface by discharging the processing liquid. The heating temperature is about 100 ° C. to 140 ° C., and preferably 120 ° C. in consideration of adhesion. The heating time is, for example, 3 minutes.

After the heat treatment, the robot CR transports the substrate W to the cooling unit 29. In the cooling unit 29, the heated substrate W is cooled. The substrate W is lowered to room temperature (25 ° C.), for example.

The robot CR transports the substrate W that has been cooled to room temperature to the measurement unit 13. Here, the number of contaminants attached to the substrate W is counted, and it is inspected whether or not the substrate W has reached a target contamination degree. If the target contamination level has been reached, the substrate CR is transported to the substrate delivery section 7 by the robot CR and stored in the cassette C of the indexer 5. After the above processing is performed on all the substrates W, all the substrates W are stored in the cassette C of the indexer 5. Thereby, the contamination process for the plurality of substrates W stored in one cassette C is completed. If the target contamination level has not been reached, the substrate W is returned to the cleaning unit 11 for cleaning, and once the contaminants are removed, coating is performed again. In that case, it is preferable to perform recoating after adjusting the concentration of the contaminant in the treatment liquid.

As described above, according to the substrate processing apparatus 1 according to the present embodiment, the control unit 21 operates the transport unit 9 to apply the processing liquid to the substrate W from the cassette stage 3 in the application unit 15, A contaminant is adhered to the substrate W by the heat treatment unit 19. Since the substrate W is applied with a treatment liquid containing a contaminant, and the contaminant is attached, the evaluation substrate W reproducing the contamination in the wet process can be produced. Further, since the substrate W is subjected to heat treatment in the heat treatment section 19 after application of the treatment liquid, the evaluation substrate W subjected to the baking treatment can be manufactured.

Further, the control unit 21 can initialize the degree of contamination of the substrate W by cleaning the substrate W supplied from the cassette stage 3 by the cleaning unit 11. Therefore, the substrate W can be controlled to a desired degree of contamination by subsequently applying the treatment liquid in the application unit 15.

Furthermore, the control unit 21 can confirm that the substrate W has a desired degree of contamination by comparing the measurement results of the measurement unit 13 before and after application of the treatment liquid. Moreover, the ability of the cleaning process or the like can be determined based on the measurement result after application. Further, when the contamination level of the substrate W does not match the target value, the control unit 21 causes the cleaning unit 11 to clean the substrate W to perform initialization, and prepare the processing liquid of the liquid supply device 17. Then, a contamination substance is applied to the substrate W by measurement and application. Therefore, the evaluation substrate W having a desired degree of contamination can be produced.

Further, the substrate processing apparatus 1 includes a heat treatment unit 19 including a bake unit 27 and a cooling unit 29. By heating the substrate W by the bake unit 27, the contaminant for the processing liquid can be fixed to the substrate W. By cooling the substrate W by the cooling unit 29, the substrate W can be quickly moved to a processing apparatus to be evaluated such as cleaning. Can be processed. Further, since the substrate W is heated by the bake unit 27, contamination in the bake process can be evaluated.

Furthermore, the liquid supply device 17 stores the dispersion liquid in which the contaminant is dispersed in the dispersion tank 51, and dilutes the dispersion liquid generated in the dispersion tank in the dilution tank 53 to store the processing liquid. Since the dispersion liquid having a concentration sufficiently higher than the treatment liquid concentration is diluted in the dilution tank 53, the treatment liquid can be easily adjusted to the concentration of the desired contaminant, and the concentration can be easily changed.

Further, the application unit 15 measures the concentration of the contaminant for the processing liquid discharged from the pre-dispensing unit 43 by the concentration measurement unit 49 and adjusts the concentration of the contaminant for the result. Therefore, the contamination degree of the substrate W can be made accurate. The concentration is adjusted by replenishing the dispersion liquid from the dispersion tank 51 to the dilution tank 53 or replenishing the dilution tank 53 with pure water. Therefore, the concentration adjustment is not performed directly on the dispersion liquid but on the dilution liquid (treatment liquid) in the dilution tank 53, so that the concentration adjustment of the contaminant can be easily performed.

Furthermore, the liquid supply device 17 includes a rotating plate 101, and a stock solution container 91 having a different concentration can be disposed in each mounting port 107. Therefore, the control unit 21 operates the driving unit 103 to rotate the rotating plate 101 and operates the dropping mechanism 105 so that the stock solution container 91 having a desired concentration is located at the charging port. The concentration of the liquid can be adjusted in a wide range. In addition, it is only necessary to rotate the rotating plate 101 so that the stock solution container 91 having a desired concentration is positioned at the inlet 55, and adjustment in the dispersion tank 51 can be made relatively easy.

Next, the cleaning evaluation substrate W manufactured by the above-described substrate processing apparatus 1 will be described. Note that PSL was used as a contaminant.

Here, refer to FIG. FIG. 5 is a graph showing the relationship between the elapsed time from sample preparation and the removal rate of contaminants in this example and the conventional example.

In this graph, the evaluation substrate W prepared in the conventional example and the present example is cleaned with the same cleaning apparatus, and then the number of contaminants before and after cleaning is counted, and the removal rate is calculated from the number. And plotted. Further, the removal rate was measured for the evaluation substrate W produced at the same time. Cleaning was performed with a spray nozzle, the set spray strength was a droplet speed of 38 m / s, and the spray processing time was 30 seconds.

As is clear from the graph of FIG. 5, in the conventional example, the removal rate decreased with time, and the removal rate decreased to about 23% at the time of 15 hours. On the other hand, in this example, even when 216 hours (approximately 8 days) had elapsed, it was approximately 82%, and remained constant at approximately 80% regardless of the elapsed time from the production point. Thus, in this example, it can be seen that the contaminants are stably attached to the substrate W regardless of the elapsed time from the time when the evaluation substrate W was produced. In other words, it shows that a suitable substrate W for the evaluation of the cleaning apparatus was produced.

Next, refer to FIG. FIG. 6 is a graph showing the relationship between the sample preparation date and the contaminant removal rate in this example.

This graph shows a change in the removal rate for each day after a cleaning process was performed on each of a plurality of evaluation substrates W produced on different days according to the present example.

As can be seen from the graph of FIG. 6, the removal rate is stable at about 80% even when the day is changed. The fluctuation range was about 5%.

FIG. 7 is a graph showing the relationship between the sample preparation date and the removal rate of contaminants in a conventional preparation method not according to the present invention, that is, a sample in which only the treatment liquid is applied and the baking treatment is not performed. It is.

As is apparent from the graph of FIG. 7, it can be seen that if the baking process is not performed, the removal rate varies by about 20% depending on the production date, and the removal rate is not stable. This is because the main component of PSL, which is a contaminant, is polystyrene. Polystyrene has no fixed melting point, but has been found to soften at about 100 ° C. It has also been found that once the softened PSL is returned to room temperature, the adhesion to the substrate W increases. Therefore, although the higher the temperature during the baking process, the more effective it is to evaporate the water. However, if the temperature during the baking process is too high, the PSL adheres too much to the substrate W and is difficult to remove. It becomes inappropriate.

Therefore, the present inventors produced a substrate W for evaluation by changing the temperature during the baking process, and measured the change in the removal rate of the pollutant for each temperature. Reference is now made to FIG. FIG. 8 is a graph showing the relationship between the baking temperature and the contaminant removal rate.

As is apparent from the graph of FIG. 8, the removal rate is high when the temperature during baking is less than 100 ° C., but the removal rate decreases according to the temperature when the temperature during baking exceeds 100 ° C. and reaches 140 ° C. I can see that If the removal rate is too high or too low, it is unsuitable for evaluation, and the baking temperature is set appropriately according to the type of contaminant, the type of substrate W, and the cleaning method and apparatus to be evaluated. It is preferable to do this.

The present invention is not limited to the above embodiment, and can be modified as follows.

(1) In the embodiment described above, the substrate processing apparatus 1 includes the cleaning unit 11. However, the present invention does not need to include the cleaning unit 11 as long as the substrate W having a clean processing surface can be stably transported to the coating unit 15. Thereby, the structure of the substrate processing apparatus 1 can be simplified and cost reduction can be aimed at.

(2) Although the measurement unit 13 is provided in the embodiment described above, the present invention does not necessarily include the measurement unit 13. Thereby, the structure of the substrate processing apparatus 1 can be simplified and cost reduction can be aimed at.

(3) In the above-described embodiment, the transport unit 9 is disposed at the center, and the cleaning unit 11 and the application unit 15 are disposed around the transport unit 9, but the present invention is not limited to such an arrangement. For example, the structure which arrange | positions the washing | cleaning part 11 and the application | coating part 15 linearly, and arrange | positions the conveyance part 9 so that the conveyance arm 25 can move along it may be employ | adopted.

(4) In the above-described embodiment, the dispersion tank 51 includes the rotating plate 101 as the stock solution charging mechanism 57 and the mounting port 107 into which a plurality of stock solution containers 91 can be mounted. However, the present invention is not limited to such a configuration. For example, a stock solution container mounting unit including a plurality of stock solution containers 91 is provided, and the discharge port 97 of each stock solution container 91 and the dispersion tank 51 are connected to each other by piping so that the stock solution can be transferred from any stock solution container 91 to the dispersion tank 51. It is good also as a structure dripped. Thereby, rotation control becomes unnecessary, it is only necessary to control the on-off valve of the piping, and the control can be further simplified.

(4) In the above-described embodiment, the processing liquid containing the PSL dispersion is supplied to the substrate W. For example, in addition to the PSL, the processing liquid containing the silicon oxide particle dispersion or nitriding is used. A plurality of liquid supply devices 17 for supplying a treatment liquid containing a dispersion of silicon particles may be provided side by side. As a result, the evaluation substrate W can be used for evaluation in various processes.

(5) In the above-described embodiment, the substrate W is kept stationary when the treatment liquid is applied to the substrate W. However, the treatment liquid may be supplied while the substrate W is rotated. Alternatively, the substrate W may be started to rotate after the processing liquid is started to be supplied to the stationary substrate W. Such rotation control of the substrate W may be determined in consideration of the distribution of contaminants attached to the processing surface of the substrate W.

(6) In the above-described embodiment, the discharge nozzle 39 is fixed to the rotation center of the substrate W. However, if the distribution of the contaminants on the processing surface of the substrate W is non-uniform, for example, the processing liquid may be supplied while the ejection nozzle 39 is swung from the central portion to the peripheral portion of the substrate W. Good. Alternatively, the processing liquid may be discharged from the discharge nozzle 39 at the central portion of the substrate W, and then the discharge nozzle 39 may be moved to the vicinity of the middle between the central portion and the peripheral edge, and the remaining processing liquid may be discharged at that location. . By such a discharge method, a uniform distribution of contaminants can be obtained on the processing surface of the substrate W.

Next, Embodiment 2 of the present invention will be described with reference to the drawings.
FIG. 9 is a schematic configuration diagram of a substrate processing apparatus according to the second embodiment.

The substrate processing apparatus according to this embodiment is a so-called single-wafer type apparatus that sequentially processes the substrates W one by one. Here, it is assumed that the substrate W is hydrophobic. For example, when the substrate W is made of silicon, the hydrophobic substrate W is one in which silicon is exposed without an oxide film or the like, or an organic film such as a photoresist film or a protective film is deposited on the substrate W. It is what.

The spin chuck 111 has a circular shape in plan view and has a diameter slightly larger than the diameter of the substrate W. A plurality of support pins 112 are erected on the periphery of the upper surface of the spin chuck 111. The plurality of support pins 112 are in contact with the peripheral edge and the edge of the lower surface of the substrate W, and support the substrate W in a horizontal posture by separating the lower surface of the substrate W from the upper surface of the spin chuck 111 by a predetermined distance. The tip of the rotating shaft 113 is connected to the center of the lower surface of the spin chuck 111. The rotating shaft 113 is connected to the electric motor 114. The electric motor 114 is arranged so that the rotation axis is oriented in the vertical direction.

A splash prevention cup 115 is provided around the spin chuck 111. When the spin chuck 111 is rotated, the splash prevention cup 115 collects the processing liquid that is scattered from the substrate W held by the spin chuck 111 to the surroundings. The spin chuck 111, the rotation motor 114, and the anti-scattering cup 115 move up and down (not shown) when the substrate W is placed on the spin chuck 111 or when the substrate W placed on the spin chuck 111 is unloaded. They are moved up and down relatively by the mechanism so that the spin chuck 111 protrudes from the anti-scattering cup 115.

The above-described spin chuck 111 corresponds to the “rotating means” in the present invention.

A blocking plate 116 is provided above the spin chuck 111. The blocking plate 116 includes a rotating plate 117 and a supply shaft 118. The blocking plate 116 can be moved up and down over a “standby position” indicated by a solid line in FIG. 9 and a “processing position” indicated by a two-dot chain line in FIG. Further, the blocking plate 116 is configured to be able to rotate synchronously at the same speed in the same direction as the spin chuck 111. The rotating plate 117 has a circular shape in a plan view and has substantially the same diameter as the spin chuck 111. The supply shaft 118 extends upward from the center of the upper surface of the rotating plate 117. The supply shaft 118 has a first supply path 119 formed at the center, and a second supply path 120 formed coaxially on the outer peripheral side thereof.

The rotation plate 117 has a supply port 121 communicating with the first supply path 119 formed at the center of the lower surface thereof, and an injection port 122 communicating with the second supply path 120 formed on the outer peripheral side thereof. One end of a supply pipe 123 is connected to the first supply path 119 in communication. A low surface tension treatment liquid supply source 124 is connected in communication with the other end of the supply pipe 123. The supply pipe 123 is provided with a flow rate adjustment valve 124. The flow rate adjustment valve 125 adjusts the flow rate of the low surface tension treatment liquid flowing through the supply pipe 123. In addition, one end of a supply pipe 126 is connected to the second supply path 120 in communication. A dry nitrogen gas supply source 127 capable of supplying dry nitrogen gas (dry N ₂ gas) is connected to the other end side of the supply pipe 12. The supply pipe 126 is provided with a flow rate adjustment valve 128. The flow rate adjustment valve 128 adjusts the flow rate of the dry nitrogen gas flowing through the supply pipe 126.

The low surface tension treatment liquid supply source 124 described above stores, for example, a low surface tension treatment liquid that is preliminarily mixed with a contaminant. Examples of the pollutant include polystyrene called PSL (Polystyren Latex), and fine particles of silicon oxide (SiO ₂ ) and silicon nitride (SiN). In particular, since PSL is widely used as standard particles, it is easily available and suitable. The low surface tension treatment liquid preferably has a lower surface tension and higher vapor pressure than pure water. Specific examples include organic solvents, and more specific examples include isopropyl alcohol (IPA), methanol, ethanol, and acetone. Further, a surfactant (for example, HMDS (hexamethyldisilazane) etc.) may be added to lower the surface tension.

The supply port 121 corresponds to “low surface tension treatment liquid supply means” in the present invention, and the blocking plate 116 corresponds to “inert gas atmosphere forming means” in the present invention.

Next, with reference to FIG. 10 to FIG. 13, an evaluation substrate manufacturing process by the above-described substrate processing apparatus will be described. FIG. 10 is a schematic view showing a supply state of the low surface tension treatment liquid, FIG. 11 is a schematic view showing a state where the low surface tension treatment liquid is spread over the entire upper surface of the substrate, and FIG. It is a schematic diagram which shows the state moved to the process position from the standby position, and FIG. 13 is a schematic diagram which shows the state of a drying process.

In the initial state, it is assumed that a substrate W having at least a hydrophobic upper surface (processed surface) is already placed on the spin chuck 111. Further, it is assumed that the blocking plate 116 is positioned at the “standby position”.

First, in a state where the spin chuck 111 is kept stationary without being rotated, the flow rate adjustment valve 125 is opened, and the low surface tension treatment liquid is supplied from the supply port 121 at a predetermined flow rate. After supplying a predetermined amount of the low surface tension treatment liquid from the supply port 121, the flow rate adjustment valve 125 is closed. As a result, a predetermined amount of the low surface tension treatment liquid is dropped onto the center of the upper surface of the substrate W (FIG. 10). Although the upper surface of the substrate W is hydrophobic, since the processing liquid has a low surface tension characteristic, the entire surface of the dropped region can be uniformly covered without being repelled on the upper surface of the substrate W.

Next, the electric motor 114 is operated, and the spin chuck 111 is rotated at a first rotation speed (which is a relatively low rotation speed, for example, about 150 rpm to 300 rpm). A low surface tension treatment liquid is spread over the entire surface of the substrate W (FIG. 11). As a result, the low surface tension treatment liquid spreads evenly over the entire top surface of the substrate W. At this time, the excessive low surface tension treatment liquid is scattered from the peripheral edge of the substrate W to the outer peripheral side and is collected by the scattering prevention cup 115.

Next, the rotational speed of the electric motor 114 is switched to a second rotational speed higher than the first rotational speed (which is a relatively high rotational speed, for example, about 1000 rpm to 1500 rpm), and the shielding plate 116 is “processed”. The position is lowered to “position” (FIG. 11). At this time, the blocking plate 116 is set in the same direction and at the same speed as the rotation speed of the spin chuck 111.

Next, the flow rate adjustment valve 128 is operated to inject dry nitrogen gas from the injection port 122 at a predetermined flow rate. As a result, the low surface tension treatment liquid that covers the upper surface of the substrate W thinly is pushed away from the central portion to the outer peripheral side by the dry nitrogen gas and is dried by the dry nitrogen gas (FIG. 12). As a result, only the contaminants contained in the low surface tension treatment liquid remain on the upper surface of the substrate W. By performing this drying process for a predetermined time, the contaminants can be uniformly attached over the entire top surface of the substrate W.

When the drying process is completed, the rotation of the electric motor 114 is stopped, the flow rate adjustment valve 128 is closed, the rotation of the blocking plate 116 is stopped, and the "standby position" is raised. Then, it is replaced with the next substrate W to be processed. Through the series of processes described above, one substrate W can be used as an evaluation substrate.

According to the apparatus of this embodiment described above, since the low surface tension treatment liquid is supplied to the upper surface of the hydrophobic substrate W held by the spin chuck 111, even if the substrate W is hydrophobic, it is difficult to be repelled and contaminated. The application substance can be applied to the entire upper surface of the hydrophobic substrate W. Then, in a state where the inert gas atmosphere is formed by the blocking plate 116, the low surface tension treatment liquid is dried, and the contaminant is attached to the entire upper surface of the hydrophobic substrate W. At this time, since it is dried in an inert gas atmosphere, the substance and oxygen from the substrate W are eluted into the low surface tension treatment liquid, and a watermark is generated due to the generation of a substance different from the contaminant. Can be suppressed. Therefore, an evaluation substrate that can be used for evaluation of the wet process can be manufactured even with the hydrophobic substrate W, and the accuracy of the degree of contamination can be made accurate.

Further, during the drying process, the shielding plate 116 moves to a “processing position” close to the upper surface of the substrate W, so that the amount of inert gas necessary to form an inert gas atmosphere can be reduced.

Also, since the rotating plate 117 rotates in synchronization with the spin chuck 111, by supplying dry nitrogen gas from the injection port 122, a dry nitrogen gas atmosphere can be stably formed, and surrounding air is not entrained.

Furthermore, since the low surface tension treatment liquid is supplied from the supply port 121 of the rotating plate 117, a separate nozzle is not required, the configuration can be simplified, and the apparatus cost can be reduced.

Also, since an organic solvent is used as the low surface tension treatment solution, the drying time can be shortened during the drying treatment, and the treatment efficiency can be improved.

The present invention is not limited to the above embodiment, and can be modified as follows.

(1) In the embodiment described above, the rotating plate 117 has substantially the same diameter as the spin chuck 111, but the present invention is not limited to such a configuration. For example, the rotating plate 117 may be smaller in diameter than the spin chuck 111. In this case, an injection port is provided at the center of the rotating plate 117, and an injection port is also provided at the lower part of the outer peripheral surface. Then, by spraying dry nitrogen gas in an umbrella shape toward the outer peripheral edge of the substrate W from the injection port at the lower part of the outer peripheral surface, the same effect as in the above-described embodiment can be obtained. Furthermore, since the rotating plate 117 has a small diameter, the rotating torque of the rotating plate 117 can be reduced, and the load on the rotating mechanism can be reduced.

(2) In the above-described embodiment, the spin chuck 111 is configured as a so-called “mechanical chuck”, but the present invention is not limited to this configuration. For example, you may employ | adopt the "suction type chuck" which adsorb | sucks and hold | maintains the lower surface center part of the board | substrate W. FIG.

(3) In the above-described embodiment, the low surface tension treatment liquid is supplied while the substrate W is stationary. However, the substrate W may be supplied while being rotated at a low speed.

(4) Although nitrogen gas is used as the inert gas in the above-described embodiments, the present invention is not limited to nitrogen gas as long as it is an inert gas.

Next, Embodiment 3 of the present invention will be described with reference to the drawings.
FIG. 14 is a schematic configuration diagram illustrating the entire substrate processing apparatus according to the third embodiment.

The substrate processing apparatus according to the present embodiment includes a mounting table 131. On the mounting table 131, the substrate W to be processed is mounted in a horizontal posture. The substrate W here has an upper surface having hydrophobic characteristics. Examples of the hydrophobic film include bare silicon and organic films such as a photoresist film.

The mounting table 131 has a diameter approximately the same as the outer diameter of the substrate W, and is provided with a heater 132 and a cooler 133 inside. The heater 132 heats the substrate W placed on the placement table 131, and the cooler 133 cools the substrate W placed on the placement table 131.

The heater 132 corresponds to the “drying means” and the “heating means” in the present invention.

The chamber 134 is provided so as to surround the entire mounting table 131. An electric motor 135 is provided at the bottom of the chamber 134. The electric motor 135 is arranged in a vertical position with the rotary shaft 136 oriented in the vertical direction. The rotating shaft 136 has a tip connected to the center of the bottom surface of the mounting table 131. When the electric motor 135 is operated, the mounting table 131 is rotated in the horizontal plane around the vertical axis.

The drainage port 136 is formed at one part of the bottom surface of the chamber 134. The drain port 136 communicates the inside and the outside of the chamber 134. One end side of the drain pipe 137 is connected to the drain port 136, and the other end side is connected to a recovery facility (not shown). The drain pipe 137 is provided with an on-off valve 138. When the on-off valve 138 is opened, the processing liquid stored at the bottom of the chamber 134 is discharged.

The exhaust port 139 is formed at one part of the bottom surface of the chamber 134. One end side of the exhaust pipe 140 is connected to the exhaust port 139 and the other end side is connected to the decompression pump 141. The exhaust pipe 140 is provided with an open / close valve 142. When the on-off valve 142 is opened and the decompression pump 141 is operated, the inside of the chamber 134 can be decompressed.

The mist forming nozzle 143 and the spray nozzle 144 are provided on the ceiling surface of the chamber 134 corresponding to the upper side in the rotation center of the mounting table 131. The mist forming nozzle 143 is connected to one end side of the processing liquid supply pipe 145 in communication. The other end of the processing liquid supply pipe 145 is connected to a solvent supply source. The flow rate adjusting valve 146 is provided in the processing liquid supply pipe 145 and adjusts the flow rate of the solvent flowing through the processing liquid supply / discharge pipe 145. One end of a branch pipe 147 is connected in communication between the flow regulating valve 146 and the mist nozzle 143. The other end side of the branch pipe 147 is inserted into the storage tank 148. The branch pipe 147 is provided with a flow rate adjustment valve 149 and a pressure pump 150.

The storage tank 148 stores a processing liquid containing a contaminant. The treatment liquid is preliminarily mixed with a contaminant having a predetermined concentration in a solvent. In addition, as for the pollutant, the type of the pollutant and the particle diameter are determined according to the purpose of use of the evaluation substrate. Examples of the pollutant include polystyrene called PSL (Polystyren Latex), and fine particles of silicon oxide (SiO ₂ ) and silicon nitride (SiN). In particular, since PSL is widely used as standard particles, it is easily available and suitable. Examples of the solvent for the treatment liquid include pure water and organic solvents. Examples of the organic solvent include isopropyl alcohol (IPA) and hydrofluoroether (HFE). Considering the efficiency at the time of drying, an organic solvent is preferable to pure water, and one having a high vapor pressure is preferable. The solvent supply source described above supplies the solvent of the processing liquid described above.

The above-described mist nozzle 143 sprays the processing liquid containing the contaminants supplied from the storage tank 148 at a predetermined flow rate into the chamber 134. Alternatively, only the solvent can be sprayed into the chamber 134. The mist forming nozzle 143 mists the processing liquid and the solvent containing the contaminants by spraying means such as a two-fluid nozzle, a one-fluid nozzle, or a nebulizer, and supplies the mist into the chamber 134. Incidentally, the mist of the processing liquid by the mist generating nozzle 143 is, for example, in the micro order, and the contaminant is about tens of nanometers.

The mist-generating nozzle 143 corresponds to the “coating means”, the “treatment liquid mist making means” and the “contaminant-containing treatment liquid mist making means” in the present invention.

The one end side of the carrier pipe 151 is connected to the spray nozzle 144 described above. A dry nitrogen gas supply source is connected to the other end side of the carrier pipe 151. The flow rate adjustment valve 152 adjusts the flow rate of the dry nitrogen gas from the dry nitrogen gas supply source. A first contaminant substance tank 153 and a second contaminant substance tank 154 are communicated between the flow rate adjusting valve 152 and the spray nozzle 143. The first pollutant tank 153 includes a flow rate adjusting valve 155, and the second pollutant tank 154 includes a flow rate adjusting valve 156. The first pollutant tank 153 stores, for example, the aforementioned pollutant having a small particle diameter, and the second pollutant tank 154 stores the first pollutant tank 153. The pollutant with a particle size larger than the pollutant is stored.

The above-described spray nozzle 27 corresponds to “spreading means” in the present invention.

By opening the flow rate adjustment valve 152 and opening the flow rate adjustment valve 155 or the flow rate adjustment valve 156, a contaminant having a desired particle diameter can be supplied into the chamber 134 from the spray nozzle 144 together with the dry nitrogen gas.

Here, an example of manufacturing a substrate for evaluation in a wet process will be described using the substrate processing apparatus having the above-described configuration.

<Production method 1>

Refer to FIG. FIGS. 15A to 15C are schematic views showing a processing process according to the evaluation substrate manufacturing method 1. FIG.

First, the hydrophobic substrate W is loaded into the chamber 134 and placed on the mounting table 131 with the hydrophobic surface as the upper surface. Then, with the on-off valve 138 closed, the on-off valve 142 is opened to operate the decompression pump 141. As a result, the inside of the chamber 134 is decompressed, and excess particles and the like are discharged from the chamber 134. When the internal pressure of the chamber 134 reaches a predetermined pressure, the open / close valve 142 is closed and the decompression pump 141 is stopped. Next, with the flow rate adjustment valve 146 closed, the flow rate adjustment valve 149 is opened and the pressure feed pump 150 is operated. As a result, the processing liquid containing the contaminant is supplied from the mist nozzle 143 into the chamber 134 as the mist M1 (FIG. 15A).

The above process corresponds to the “coating process” in the present invention.

Then, a mist M1 of a processing solution containing a contaminant is adhered to the entire upper surface of the hydrophobic substrate W (FIG. 15B). The mist M1 contains a contaminant D. Note that it is preferable that the treatment liquid containing the contaminant is supplied in such an amount that mist is not collected on the hydrophobic surface of the substrate W. This is because, since the upper surface of the substrate W is hydrophobic, if a large amount of mist M1 is supplied, the neighboring mist M1 is combined to form a large lump and becomes unstable on the hydrophobic surface and may move. .

Next, the heater 132 of the mounting table 131 is heated to heat the substrate W together with the mounting table 131. As a result, only the solvent of the mist M1 of the treatment liquid containing the contaminant D is evaporated. Therefore, only the contaminant D in the mist M1 adheres to the hydrophobic substrate W (FIG. 15C). If necessary, the substrate 133 is cooled to a predetermined temperature by the cooler 133.

The above process corresponds to the “drying process” in the present invention.

Thereafter, the decompression of the chamber 134 is released, and the hydrophobic substrate W having the contamination substance D attached to the entire surface is carried out of the chamber 134.

<Production method 2>

Refer to FIG. FIGS. 16A to 16D are schematic views showing the processing steps according to the evaluation substrate manufacturing method 2. FIG.

First, the hydrophobic substrate W is loaded into the chamber 134 and placed on the mounting table 1. Then, the inside of the chamber 134 is decompressed to discharge excess particles and the like. When the pressure in the chamber 134 reaches a predetermined pressure, the decompression pump 141 is stopped. Next, the flow rate adjustment valve 146 is opened while the flow rate adjustment valve 149 is closed. Thereby, only the solvent (treatment liquid) is supplied into the chamber 134 from the mist nozzle 143 by the mist M2 (FIG. 16A).

Then, a mist M2 containing only a solvent (treatment liquid) adheres to the entire upper surface of the hydrophobic substrate W (FIG. 16B). It is preferable that the mist M2 is not supplied in a large amount in the same manner as in the production method 1 described above.

Next, the on-off valve 155 is opened and, for example, the flow rate adjusting valve 152 is opened. Thereby, the pollutant D is sprayed into the chamber 134 from the spray nozzle 144 together with the dry nitrogen gas (FIG. 16C). As a result, the contaminant D is taken into the mist M2 on the upper surface of the substrate W.

The above two processes correspond to the “coating process” in the present invention, and the process of FIG. 16C corresponds to the “dispersing process” in the present invention.

Next, the heater 132 of the mounting table 131 is heated to heat the substrate W together with the mounting table 131. As a result, only the solvent of the mist M2 of the treatment liquid containing the contaminant D is evaporated. Therefore, the contaminant D in the mist M2 adheres to the hydrophobic substrate W (FIG. 16C).

The above process corresponds to the “drying process” in the present invention.

Thereafter, the decompression of the chamber 134 is released, and the hydrophobic substrate W having the contamination substance D attached to the entire surface is carried out of the chamber 134.

According to the method of the present embodiment, the contaminant D is attached via the mists M1 and M2 of the processing solution. Therefore, even if the substrate is a hydrophobic substrate W, the mists M1 and M2 are evenly applied over the entire surface of the substrate W. Can do. Therefore, even for the hydrophobic substrate W, it is possible to produce an evaluation substrate that reproduces the adhesion of contaminants in the wet process.

In addition, since the manufacturing method 1 supplies the substrate W with the mist M1 of the processing liquid containing the contaminant D, the contaminant D can be applied to the substrate W at a time. In addition, since the contaminant D is attached by the treatment liquid containing the contaminant D, a state extremely close to contamination in the wet process can be reproduced.

Also, in the preparation method 2, the mist M2 containing only the processing liquid is supplied, and the contaminant D is sprayed over the substrate W, so that the contaminant D is taken into the mist M2 of the processing liquid on the hydrophobic surface. be able to. Therefore, the contaminant D can be applied on the hydrophobic surface of the substrate.

Further, according to the apparatus of this embodiment, the mists M1 and M2 of the processing liquid are supplied to the entire surface of the hydrophobic substrate W mounted on the mounting table 131, and the applied processing liquid is dried by the heater 132. The contaminant D can be adhered to the entire surface of the hydrophobic substrate W. Since the contaminant D is attached through the mists M1 and M2 of the processing liquid, the mists M1 and M2 can be evenly applied to the entire surface of the substrate W even if the substrate is a hydrophobic substrate W. Therefore, even for the hydrophobic substrate W, it is possible to produce an evaluation substrate that reproduces the adhesion of contaminants in the wet process.

The present invention is not limited to the above embodiment, and can be modified as follows.

(1) In the above-described embodiment, drying by the heater 132 is performed. For example, in the case of a processing liquid having a high vapor pressure, the inside of the chamber 134 is further depressurized by the decompression pump 141 so as to be dried. May be. Alternatively, drying may be performed by rotating the electric motor 135 at a low speed.

(2) In the above-described embodiment, the mounting table 131 is configured to be rotatable. However, if the drying is not performed by rotation, the electric motor 135 may be omitted.

(3) In the above-described embodiment, the mounting table 131 is surrounded by the chamber 134. However, if the environment is clean and substances other than the contaminant D are not mixed in from the surroundings, the chamber 7 is omitted. Also good.

(4) In the above-described embodiment, mist is supplied at room temperature, but the substrate W may be cooled by the cooler 133, for example. Thereby, adhesion of the mist supplied into the chamber 134 to the substrate W can be promoted.

(5) In the above-described embodiments, the device configuration is compatible with both the manufacturing method 1 and the manufacturing method 2, but when only one is implemented, the other configuration can be omitted.

As described above, the present invention is suitable for a technique for creating a substrate for evaluation in the semiconductor field.

DESCRIPTION OF SYMBOLS 1 ... Substrate processing apparatus 3 ... Cassette stage 3a, 3b ... Placement part 5 ... Indexer 7 ... Substrate delivery part 9 ... Conveyance part 11 ... Cleaning part 13 ... Measuring part 15 ... Coating part 17 ... Liquid supply apparatus 19 ... Heat processing part 21 ... Control part W ... Substrate C ... Cassette 23 ... Delivery base 25 ... Transfer arm 27 ... Bake unit 29 ... Cooling unit 51 ... Dispersion tank 53 ... Dilution tank 55 ... Filling port 57 ... Stock solution feeding mechanism 101 ... Rotary plate 103 ... Drive part 105 ... Dripping mechanism 107 ... Mounting port R, CR ... Robot

Claims (23)

In a substrate processing apparatus for applying a contaminant to a substrate,
A substrate supply and storage unit for supplying unprocessed substrates and storing processed substrates;
A liquid supply unit for supplying a processing liquid in which a contaminant is dispersed;
An application unit that applies the processing liquid supplied from the liquid supply unit to the substrate supplied from the substrate supply storage unit;
A heat treatment part for heat treating the substrate coated with the treatment liquid;
A transport unit that transports the substrate between the substrate supply and storage unit, the coating unit, and the heat treatment unit;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
A cleaning section for cleaning the substrate;
A substrate processing apparatus, further comprising: a control unit that causes the substrate supplied from the substrate supply and storage unit to be cleaned by the cleaning unit, and then applies the coating to the cleaned substrate by the coating unit. . The substrate processing apparatus according to claim 1 or 2,
A measuring unit for measuring the degree of contamination of the substrate;
Before performing application at the application unit, the measurement unit measures the degree of contamination of the substrate, and after applying at the application unit, the control unit causes the measurement unit to measure the degree of contamination of the substrate; A substrate processing apparatus further comprising: The substrate processing apparatus according to claim 3,
When the contamination level of the substrate does not match a target value as a result of measurement by the measurement unit after application by the application unit, the control unit causes the cleaning unit to clean the substrate, and the liquid supply unit The substrate processing apparatus is characterized in that the processing liquid is prepared and the measurement by the measurement unit and the coating by the coating unit are performed. In the substrate processing apparatus according to claim 1,
The heat treatment part includes a heating part for heating the substrate and a cooling part for cooling the substrate. In the substrate processing apparatus in any one of Claim 1 to 5,
The liquid supply unit includes a dispersion tank for storing a dispersion liquid in which a contaminant is dispersed in a liquid, and a dilution tank for diluting the dispersion liquid generated in the dispersion tank and storing it as a processing liquid. A substrate processing apparatus. The substrate processing apparatus according to claim 6,
The application unit includes a pre-dispensing unit that discharges a predetermined amount of processing liquid at a standby position before supplying the processing liquid to an unprocessed substrate, and a concentration of a contaminant in the processing liquid discharged from the pre-dispensing unit. A concentration measuring unit for measuring
In the case where the measurement result in the concentration measurement unit does not match the target concentration, the liquid supply unit is used for contamination by replenishing the dispersion liquid from the dispersion tank to the dilution tank or replenishing the dilution tank with liquid. A substrate processing apparatus for adjusting a concentration of a substance. In the substrate processing apparatus of Claim 6 or 7,
The dispersion tank is
An inlet formed at the top;
A rotating plate that is configured to be rotatable around a vertical axis at the center, and has a plurality of insertion ports on the outer peripheral side from the center,
A dropping mechanism that is provided at each insertion port of the rotating plate and expands and contracts the inner peripheral surface of each insertion port of the rotating plate toward the center of each insertion port;
A drive unit that rotates the rotating plate and positions one of the insertion ports at the insertion port;
Further comprising
A stock solution container for storing a stock solution of a dispersion containing a contaminant is inserted into each insertion port so that its discharge port faces below the insertion port,
The control unit operates the drip mechanism in a state where the drive unit is operated and moved so that a desired stock solution container is located at the charging port, and the dispersion tank contains a contaminant for contamination. A substrate processing apparatus characterized in that an undiluted solution is introduced. In a liquid supply apparatus for supplying a processing liquid containing a contaminant to a substrate,
A dispersion tank for storing a dispersion liquid in which a contaminant is dispersed in a liquid;
A dilution tank for diluting the dispersion produced in the dispersion tank and storing the treatment liquid;
Supply means for supplying a processing liquid from the dilution tank to the substrate;
A control unit that adjusts the concentration of the contaminant by replenishing the dispersion liquid from the dispersion tank or replenishing the dilution tank with liquid; and
A liquid supply apparatus comprising: The liquid supply apparatus according to claim 9, wherein
The dispersion tank is
An inlet formed at the top;
A rotating plate that is configured to be rotatable around a vertical axis at the center, and has a plurality of insertion ports on the outer peripheral side from the center,
A dropping mechanism that is provided at each insertion port of the rotating plate and expands and contracts the inner peripheral surface of each insertion port of the rotating plate toward the center of each insertion port;
A drive unit that rotates the rotating plate and positions one of the insertion ports at the insertion port;
Further comprising
A stock solution container for storing a stock solution of a dispersion containing a contaminant is inserted into each insertion port so that its discharge port faces below the insertion port,
The control unit operates the drip mechanism in a state where the drive unit is operated and moved so that a desired stock solution container is located at the charging port, and the dispersion tank contains a contaminant for contamination. A liquid supply apparatus for supplying a stock solution. In a substrate processing apparatus that attaches a contaminant to a hydrophobic substrate,
A rotating means for holding the hydrophobic substrate in a horizontal position and rotating the hydrophobic substrate in a horizontal plane;
A low surface tension treatment liquid supply means for supplying a low surface tension treatment liquid containing a contaminant to the upper surface of the hydrophobic substrate;
An inert gas atmosphere forming means for forming an inert gas atmosphere on the upper surface of the hydrophobic substrate held by the rotating means;
With
The low surface tension treatment liquid is supplied from the low surface tension treatment supply means to the upper surface of the hydrophobic substrate held by the rotating means to supply the low surface tension treatment liquid to the entire upper surface of the hydrophobic substrate, In the state where the inert gas atmosphere is formed by the inert gas atmosphere forming means, the hydrophobic substrate is rotated by the rotating means and the low surface tension treatment liquid supplied to the upper surface is dried, thereby making the hydrophobic A substrate processing apparatus, wherein a contaminant is attached to the entire top surface of a substrate. The substrate processing apparatus according to claim 11, wherein
The inert gas atmosphere forming means is configured to be movable up and down over a standby position separated above the rotating means and a processing position close to the upper surface of the hydrophobic substrate held by the rotating means,
The substrate processing apparatus, wherein the inert gas atmosphere forming means is moved to a processing position when the low surface tension processing liquid is dried. The substrate processing apparatus according to claim 12, wherein
The inert gas atmosphere forming means includes a rotating plate that is rotatable around a vertical axis in synchronization with the rotating means, and an injection port that is formed on the rotating plate and injects an inert gas toward a hydrophobic substrate. A substrate processing apparatus comprising: The substrate processing apparatus according to claim 13,
The substrate processing apparatus, wherein the low surface tension processing liquid supply means includes a supply port for supplying the low surface tension processing liquid from the center of the lower surface of the rotating plate toward the upper surface of the hydrophobic substrate. The substrate processing apparatus according to any one of claims 11 to 14,
The substrate processing apparatus, wherein the low surface tension processing liquid supply means supplies an organic solvent as a low surface tension processing liquid. In a substrate processing method in which a contaminant is attached to a hydrophobic substrate,
A process of applying a contaminant to the entire surface of the hydrophobic substrate by supplying a mist of the treatment liquid to the entire surface of the hydrophobic substrate;
A drying process in which the mist of the processing solution supplied to the entire surface of the hydrophobic substrate is dried, and a contaminant is adhered to the entire surface of the hydrophobic substrate;
A substrate processing method characterized by comprising: The substrate processing method according to claim 16, wherein
In the coating process, a mist of a processing solution containing a contaminant is supplied to the entire surface of the hydrophobic substrate. The substrate processing method according to claim 16, wherein
The coating process includes a mist supply process for supplying a mist of a processing solution over the entire surface of a hydrophobic substrate, and a spraying process for spraying a contaminant to the upper side of the hydrophobic substrate. Substrate processing method. In a substrate processing apparatus that attaches a contaminant to a hydrophobic substrate,
A mounting table for mounting a hydrophobic substrate;
An application means for applying a contaminant to the entire surface of the hydrophobic substrate by supplying a mist of the treatment liquid to the entire surface of the hydrophobic substrate placed on the mounting table;
Drying means for drying the treatment liquid applied to the entire surface of the hydrophobic substrate by the applying means, and attaching a contaminant to the entire surface of the hydrophobic substrate;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 19,
The substrate processing apparatus, wherein the coating means is a contaminant-containing treatment liquid mist forming means for supplying a mist of a treatment liquid containing a contaminant to the entire surface of a hydrophobic substrate. The substrate processing apparatus according to claim 19,
The coating means includes a treatment liquid mist forming means for supplying a mist of the treatment liquid to the entire surface of the hydrophobic substrate, and a spraying means for spraying a contaminant to the upper side of the hydrophobic substrate. Substrate processing apparatus. The substrate processing apparatus according to any one of claims 19 to 21,
A substrate processing apparatus, further comprising a chamber surrounding the mounting table. The substrate processing apparatus according to any one of claims 19 to 22,
The substrate processing apparatus, wherein the drying means is a heating means attached to a mounting table.

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