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WO2013103038A1 - Dispositif optique et dispositif d'affichage d'image - Google Patents

Dispositif optique et dispositif d'affichage d'image Download PDF

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Publication number
WO2013103038A1
WO2013103038A1 PCT/JP2012/075696 JP2012075696W WO2013103038A1 WO 2013103038 A1 WO2013103038 A1 WO 2013103038A1 JP 2012075696 W JP2012075696 W JP 2012075696W WO 2013103038 A1 WO2013103038 A1 WO 2013103038A1
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WIPO (PCT)
Prior art keywords
layer
light
carrier generation
optical device
plasmon
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Ceased
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PCT/JP2012/075696
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English (en)
Japanese (ja)
Inventor
昌尚 棗田
雅雄 今井
慎 冨永
鈴木　尚文
瑞穂 冨山
友嗣 大野
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NEC Corp
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NEC Corp
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/008—Surface plasmon devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2073—Polarisers in the lamp house
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033—Means for improving the coupling-out of light from the light guide
    • G02B6/0035—Means for improving the coupling-out of light from the light guide provided on the surface of the light guide or in the bulk of it
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction

Definitions

  • the present invention relates to an optical device and an image display device.
  • a light source of an image display apparatus such as a projector
  • a light emitting element for example, a light emitting element, a light guide on which light (excitation light) from the light emitting element is incident, and the light guide Plasmons having a plasma frequency higher than the frequency of the light generated when the carrier generation layer is stacked on the carrier generation layer and the carrier generation layer is excited by the light of the light emitting element
  • An optical device has been developed which includes a plasmon excitation layer to be excited, and an emission layer which is laminated on the plasmon excitation layer and converts light incident from the plasmon excitation layer into light of a predetermined emission angle and emits the light. (Patent Document 1).
  • Such an optical device emits light according to the following principle. That is, first, the excitation light emitted from the light emitting element is absorbed in the carrier generation layer, whereby carriers are generated in the carrier generation layer. This carrier combines with free electrons in the plasmon excitation layer to excite surface plasmons. Then, the excited surface plasmons are emitted as light.
  • An object of the present invention is to provide an optical device and an image display device capable of improving the absorption efficiency of excitation light.
  • the optical device of the present invention is A light emitting element, A carrier generation layer in which light from the light emitting element is incident and carriers are generated; A plasmon excitation layer for exciting plasmons, which is stacked on the carrier generation layer and has a plasma frequency higher than the frequency of light generated when the carrier generation layer is excited by the light of the light emitting element; And an emission layer for converting light or surface plasmon generated on the surface of the plasmon excitation layer into light of a predetermined emission angle and emitting the light.
  • the incident angle of light incident on the carrier generation layer is 40 degrees or more.
  • the image display apparatus of the present invention is The optical device of the present invention, And an image display unit capable of displaying an image.
  • an optical device and an image display device capable of improving the absorption efficiency of excitation light.
  • FIG. 1 is a perspective view schematically showing the configuration of an example (first embodiment) of the optical device of the present invention.
  • FIG. 2A is a view showing the incident angle and the polarization dependency of the absorptivity of excitation light in the carrier generation layer when the thickness of the carrier generation layer is 50 nm.
  • FIG. 2B is a view showing the incident angle and the polarization dependency of the absorptivity of excitation light in the carrier generation layer when the thickness of the carrier generation layer is 100 nm.
  • FIG. 3 is a view showing the thickness dependency of the carrier generation layer of the absorptivity of excitation light.
  • FIG. 4 is a view showing the excitation light incident angle dependency of the emission spectrum from the optical device.
  • FIG. 1 is a perspective view schematically showing the configuration of an example (first embodiment) of the optical device of the present invention.
  • FIG. 2A is a view showing the incident angle and the polarization dependency of the absorptivity of excitation light in the carrier
  • FIG. 5 is a diagram showing an emission spectrum from the optical device when the thickness of the carrier generation layer is 50 nm.
  • FIG. 6 is a diagram showing an emission spectrum from the optical device when the thickness of the carrier generation layer is 100 nm.
  • FIG. 7 is a perspective view schematically showing the configuration of another example (Embodiment 2) of the optical device of the present invention.
  • FIG. 8 is a perspective view schematically showing the configuration of still another example (third embodiment) of the optical device of the present invention.
  • FIG. 9 is a schematic view showing a configuration of an example (Embodiment 5) of the image display device (LED projector) of the present invention.
  • FIG. 5 is a diagram showing an emission spectrum from the optical device when the thickness of the carrier generation layer is 50 nm.
  • FIG. 6 is a diagram showing an emission spectrum from the optical device when the thickness of the carrier generation layer is 100 nm.
  • FIG. 7 is a perspective view schematically showing the configuration of another example (Embodiment 2) of
  • FIG. 10 is a view for explaining an emission wavelength of an optical device used for the LED projector of the fifth embodiment, and an excitation wavelength and an emission wavelength of a phosphor.
  • FIG. 11 is a perspective view schematically showing the configuration of still another example (Embodiment 4) of the optical device of the present invention.
  • the optical device of the present embodiment is an example of an optical device having a dielectric layer.
  • the configuration of the optical device of the present embodiment is shown in the perspective view of FIG.
  • the optical device 1 of the present embodiment includes light emitting elements 101a and 101b and a light control unit 3 as main components.
  • the light control unit 3 is stacked on the carrier generation layer 103, the dielectric layer 104 stacked on the carrier generation layer 103, the plasmon excitation layer 105 stacked on the dielectric layer 104, and the plasmon excitation layer 105.
  • a wave number vector conversion layer 107 stacked on the dielectric layer 106.
  • the wave vector conversion layer 107 has a function as the “emission layer” in the present invention.
  • the light emitting elements 101 a and 101 b are disposed around the side surface of the light control unit 3. The relationship between the arrangement position of the light emitting elements 101a and 101b and the incident angle of light incident on the carrier generation layer 103 will be described later.
  • the effective dielectric constant of the excitation light incident side portion is that of the light emission side portion (hereinafter, sometimes referred to as “output side portion”). It is configured to be lower than the effective dielectric constant.
  • the incident side portion includes the entire structure stacked on the carrier generation layer 103 side of the plasmon excitation layer 105 and an ambient atmosphere medium (hereinafter, may be referred to as a “medium”) in contact with the carrier generation layer 103.
  • the entire structure includes dielectric layer 104 and carrier generation layer 103.
  • the emission side portion includes the entire structure stacked on the wave number vector conversion layer 107 side of the plasmon excitation layer 105 and a medium in contact with the wave number vector conversion layer 107.
  • the entire structure includes a dielectric layer 106 and a wave vector conversion layer 107. For example, even if the dielectric layer 104 and the dielectric layer 106 are removed, if the effective dielectric constant of the incident side portion is lower than the effective dielectric constant of the emission side portion, the dielectric layer 104 and the dielectric Layer 106 is not necessarily an essential component.
  • the effective dielectric constant ( ⁇ eff ) is a direction parallel to the interface of the plasmon excitation layer 105 as x-axis and y-axis, a direction perpendicular to the interface of the plasmon excitation layer 105 (the surface of the plasmon excitation layer 105 has irregularities
  • the angular frequency of the light emitted from the carrier generation layer 103 is ⁇
  • the plasmon excitation is ⁇ when the carrier generation layer 103 alone is excited by excitation light.
  • the effective dielectric constant ⁇ eff may be calculated using a formula represented by the following formula (7). However, it is particularly desirable to use the formula (1).
  • the integration range D is a range of three-dimensional coordinates of the incident side portion or the emission side portion with respect to the plasmon excitation layer 105.
  • the range in the x-axis and y-axis directions in the integration range D is a range not including the medium to the outer peripheral surface of the entire structure of the incident side portion or the outer peripheral surface of the entire structure of the output side portion; It is a range up to the outer edge in the plane parallel to the surface on the wave number vector conversion layer 107 side of the plasmon excitation layer 105.
  • the range in the z-axis direction in the integration range D is the range of the incident side portion or the emission side portion.
  • the effective dielectric when unevenness is formed on the surface of the plasmon excitation layer 105, if the origin of the z coordinate is moved along the unevenness of the plasmon excitation layer 105, the effective dielectric can be obtained from the above equations (1) and (7). The rate is determined.
  • ⁇ when a material having optical anisotropy is included, ⁇ ( ⁇ , x, y, z) becomes a vector, which is different for each radial direction perpendicular to the z axis It has a value. That is, for each radial direction perpendicular to the z-axis, there is an effective dielectric constant of the incident side portion and the outgoing side portion.
  • the value of ⁇ ( ⁇ , x, y, z) is a dielectric constant in a direction parallel to the radial direction perpendicular to the z axis. Therefore, all phenomena related to the effective dielectric constant, such as k spp, z , k spp and deff described later, have different values in each radial direction perpendicular to the z axis.
  • the z component k spp, z of the wave number of the surface plasmon and the x and y component k spp of the wave number of the surface plasmon are ⁇ metal of the real part of the dielectric constant of the plasmon excitation layer 105, the wave number of light in vacuum
  • the distance from the surface on the carrier generation layer 103 side of the plasmon excitation layer 105 to the surface on the plasmon excitation layer 105 side of the carrier generation layer 103 is set shorter than the effective interaction distance d eff of surface plasmons.
  • d eff is a symbol indicating the imaginary part of the numerical value in [] as Im []
  • the effective interaction distance of the surface plasmon is the distance at which the intensity of the surface plasmon is e -2 .
  • the effective dielectric constants of the incident side portion and the emission side portion exist in each radial direction perpendicular to the z axis. Therefore, as described above, all phenomena related to the effective dielectric constant, such as k spp, z , k spp , and d eff described later, have different values in the radial direction perpendicular to the z-axis.
  • the effective permittivity is obtained by repeatedly calculating the equation (1) or the equation (7), the equation (2) and the equation (3) by giving an appropriate initial value as the effective permittivity ⁇ eff. ⁇ eff can be easily obtained.
  • the dielectric constant of the layer in contact with the plasmon excitation layer 105 corresponds to the effective dielectric constant in this case.
  • the effective dielectric constant in the embodiments described later is also defined in the same manner as the formula (1) or the formula (7).
  • the incident angle at which the light emitted from the light emitting elements 101 a and 101 b (hereinafter sometimes referred to as “excitation light”) is incident on the carrier generation layer 103 is set to 40 degrees or more There is.
  • the optical device 1 has a function of absorbing excitation light in the carrier generation layer 103, that is, a waveguide including the carrier generation layer 103, the dielectric layer 104, and the plasmon excitation layer 105 (hereinafter referred to as “waveguide Coupling efficiency is improved. It will be described in detail that the optical device 1 exerts such an effect.
  • the present inventors show that the absorption efficiency of excitation light in the carrier generation layer significantly depends on the incident angle of the excitation light to the carrier generation layer. I found it. Furthermore, the present inventors have found that the absorption efficiency also depends on the polarization characteristics of the excitation light. These findings are found for the first time by the present inventors. The incident angle dependency and the polarization dependency of the absorption efficiency will be further described based on the optical device 1 of the present embodiment.
  • FIGS. 2A and 2B show the incident angle and the polarization dependency of the absorptivity of the excitation light in the carrier generation layer 103.
  • FIG. 2A the thickness of the carrier generation layer 103 is set to 50 nm, and in the example shown in FIG. 2B, the thickness of the carrier generation layer 103 is set to 100 nm.
  • the optical device 1 is set to the following conditions including the thickness condition of the carrier generation layer 103. In this example, the light reflected by the plasmon excitation layer 105 is not reused.
  • the “incident angle” refers to the light beam and the carrier generation layer 103 when the light (light beam) emitted from the light emitting elements 101 a and 101 b enters the carrier generation layer 103 (light control unit 3). Indicates the angle formed by the normal to the incident surface.
  • the “incident angle” is indicated by the same concept as described above.
  • Light emitting element 101 Laser diode (emission wavelength: 460 nm)
  • Carrier generation layer 103 Forming material: phosphor (refractive index: 1.7 + 0.03 j) Thickness: 50 nm (FIG. 2A) or 100 nm (FIG.
  • Dielectric layer 104 Forming material: SiO 2 , thickness: 10 nm
  • Plasmon excitation layer 105 Forming material: Ag, thickness: 50 nm
  • Dielectric layer 106 Forming material: TiO 2 , thickness: 0.5 mm
  • Wave vector conversion layer 107 hemispherical lens (diameter: 10 mm)
  • the absorptivity of the excitation light is 31% or more at an incident angle of 40 degrees or more, 42% or more at an incident angle of 60 degrees or more, and an incident angle of 70 More than 53%.
  • the absorptivity of the excitation light is 19% or more at an incident angle of 40 degrees or more, 27% or more at an incident angle of 60 degrees or more, and an incident angle of 70 More than 33%.
  • the relationship between the absorptivity of excitation light and the thickness of the carrier generation layer 103 is shown in FIG.
  • the horizontal axis indicates the ratio of s-polarization component in the excitation light, 100% indicates that the excitation light is only s-polarization, and 0% indicates that the excitation light is only p-polarization. Show.
  • the thickness of the carrier generation layer 103 is 50 nm, the absorptivity of the excitation light is improved as the s-polarization component increases in the excitation light.
  • the absorptivity of the excitation light is improved as the s-polarization component decreases in the excitation light, that is, the p-polarization component increases. It can be said that under any conditions, the maximum value of the absorptivity is obtained in s-polarized light or p-polarized light. In addition, it can be said that the absorptivity does not reach the maximum value in the polarization between s-polarization and p-polarization, that is, in the middle polarization.
  • FIG. 4 shows the relationship between the emission spectrum from the optical device 1 and the incident angle of the excitation light when the thickness of the carrier generation layer 103 in the example shown in FIG. 2A and FIG. 3 is 50 nm.
  • “0 °”, “10 °”, “20 °”, “30 °”, “40 °”, “50 °”, “60 °”, “70 °” and “80 °” in FIG. 4 indicate the incident angles of the excitation light.
  • the vertical axis is normalized to 1 as the emission spectrum when the incident angle of the excitation light is 0 degree.
  • the incident angle of the excitation light to the carrier generation layer 103 is larger, the light emission power is improved. From the comparison with FIG. 2A, it can be seen that there is a correlation (for example, a proportional relationship) between the excitation light amount absorbed by the carrier generation layer 103 and the light emission power.
  • FIG. 5 shows an emission spectrum from the optical device 1 when the thickness of the carrier generation layer 103 in the example shown in FIG. 2A and FIG. 3 is 50 nm.
  • “0%”, “33%”, “66%” and “100%” in FIG. 5 indicate the ratio of the s-polarization component to the excitation light.
  • the ordinate represents the emission spectrum when the excitation light is p-polarized light (“0%” in FIG. 5), and is normalized to 1.
  • the light emission power is maximum when the excitation light is s-polarized light (100%), and is eight times as large as that when the excitation light is p-polarized light (0%). From the comparison with FIG. 3, it can be seen that there is a correlation (for example, a proportional relationship) between the excitation light amount absorbed by the carrier generation layer 103 and the light emission power.
  • FIG. 6 shows an emission spectrum from the optical device 1 when the thickness of the carrier generation layer 103 in the example shown in FIG. 2B and FIG. 3 is 100 nm.
  • “0%”, “33%”, “66%” and “100%” in FIG. 6 indicate the ratio of the s-polarization component to the excitation light.
  • the ordinate represents the emission spectrum when the excitation light is s-polarized light (“100%” in FIG. 6).
  • the light emission power is maximum when the excitation light is p polarization (0%), and is four times as high as the case where the excitation light is s polarization (100%). From the comparison with FIG. 3, as in the case where the thickness of the carrier generation layer 103 is 50 nm, there is a correlation (for example, a proportional relationship) between the excitation light amount absorbed by the carrier generation layer 103 and the emission power. I understand.
  • the absorption efficiency of excitation light in the carrier generation layer depends on the incident angle of the excitation light. Based on this finding, the present inventors have found that the absorption efficiency of excitation light can be improved by setting the incident angle of the excitation light to the carrier generation layer to 40 degrees or more, and the present invention has been completed. According to the present invention, by improving the absorption efficiency of excitation light, it is possible to realize, for example, an optical device having high light emission efficiency and high light output rating. For example, since the maximum value of the absorptivity of excitation light is the case where the incident angle is 40 degrees or more, the incident angle is preferably 50 degrees or more, more preferably 60 degrees or more, still more preferably 70 to 88 degrees It is a range.
  • the absorption efficiency of excitation light is maximized in either s-polarization or p-polarization, depending on the thickness of the carrier generation layer. Therefore, if only s-polarized light or p-polarized light is incident on the carrier generation layer at the predetermined incident angle or more according to the thickness of the carrier generation layer, for example, the absorption efficiency of excitation light can be further improved.
  • the excitation light emitted from the light emitting elements 101a and 101b enters the light control unit 3 at the predetermined incident angle (and polarization).
  • the excitation light is then coupled to the waveguide and confined therein.
  • the confined excitation light excites the carrier generation layer 103 to generate carriers in the carrier generation layer 103.
  • the carrier combines with free electrons in the plasmon excitation layer 105 separated by the dielectric layer 104 to excite surface plasmons at the interface between the dielectric layer 104 and the plasmon excitation layer 105.
  • the excited surface plasmons are emitted as light from the interface between the plasmon excitation layer 105 and the dielectric layer 106 (hereinafter sometimes referred to as “emission light”).
  • the light emission occurs because the effective dielectric constant of the incident side portion is lower than the effective dielectric constant of the output side portion.
  • the wavelength of the emitted light is equal to the wavelength of light generated when the carrier generation layer 103 is excited alone. Further, assuming that the refractive index of the dielectric layer 106 is n out , the emission angle ⁇ out of the emitted light is expressed by the following formula (5).
  • the wave number of the excited surface plasmon is present only in the vicinity uniquely set in the equation (2).
  • the emitted light is only a wave number vector of the surface plasmon converted. Therefore, the emission angle of the emitted light is uniquely determined, and its polarization state is always p-polarization. That is, the emitted light is p-polarized light having very high directivity.
  • the emitted light enters the wave vector conversion layer 107, is diffracted or refracted by the wave vector conversion layer 107, and is extracted outside the optical device 1.
  • the one not coupled to the waveguide is reflected by the light control unit 3 (for example, the plasmon excitation layer 105).
  • the reflected light is reflected by a reflector such as, for example, a metal mirror, a dielectric mirror, or a prism, and the light is incident on the light control unit 3 again to further improve the utilization efficiency of the excitation light.
  • the light emitting elements 101 a and 101 b emit light (excitation light) of a wavelength that can be absorbed by the carrier generation layer 103.
  • a light emitting diode LED
  • a laser diode a super luminescent diode and the like
  • the incident angle of the excitation light to the carrier generation layer 103 is as described above.
  • the light emitting elements 101a and 101b are arranged such that the incident angle falls within the predetermined range.
  • the carrier generation layer 103 is a layer that absorbs the excitation light to generate carriers.
  • the carrier generation layer 103 includes, for example, a light emitter.
  • the light emitter is, for example, a phosphor or a phosphor.
  • the phosphor include organic phosphors, inorganic phosphors, quantum dot phosphors, and semiconductor phosphors.
  • the organic fluorescent substance include rhodamine (Rhodamine 6G) and sulforhodamine (Sulforhodamine 101).
  • the inorganic phosphor include Y 2 O 2 S: Eu, BaMgAl x O y : Eu, and BaMgAl x O y : Mn.
  • Examples of the quantum dot phosphor include quantum dots such as CdSe and CdSe / ZnS.
  • Examples of the semiconductor phosphor include phosphors of inorganic material semiconductors and organic material semiconductors.
  • Examples of the inorganic material semiconductor include GaN and GaAs.
  • Examples of the organic material semiconductor include (thiophene / phenylene) co-oligomer, Alq3 (tris (8-quinolinolato) aluminum), and the like.
  • the carrier generation layer 103 may be made of, for example, a plurality of materials that generate light of a plurality of wavelengths having the same or different emission wavelengths.
  • the thickness of the carrier generation layer 103 is not particularly limited, and is, for example, preferably 1 ⁇ m or less, and particularly preferably 100 nm or less.
  • the carrier generation layer 103 may include, for example, metal particles.
  • the metal particle excites surface plasmons on the surface of the metal particle by interaction with the excitation light, and induces an enhanced electric field near 100 times the electric field strength of the excitation light in the vicinity of the surface.
  • This enhanced electric field carriers generated in the carrier generation layer 103 can be increased, and, for example, the utilization efficiency of the excitation light in the light control unit 3 can be improved.
  • the metal constituting the metal particles is, for example, gold, silver, copper, platinum, palladium, rhodium, osmium, ruthenium, iridium, iron, tin, zinc, cobalt, nickel, chromium, titanium, tantalum, tungsten, indium, aluminum Or these alloys and the like.
  • gold, silver, copper, platinum, aluminum, or an alloy containing any of these as a main component is preferable, and gold, silver, aluminum, or an alloy containing any of these as a main component is particularly preferable.
  • the metal particle has, for example, a core-shell structure different in metal species in the periphery and in the center; a combined hemispherical combined structure of hemispheres of two metals; a cluster-in-cluster structure in which different clusters assemble to form particles And the like.
  • the resonance wavelength can be controlled without changing the size, shape, etc. of the metal particles.
  • the shape of the metal particle may be a shape having a closed surface, and examples thereof include a rectangular parallelepiped, a cube, an ellipsoid, a sphere, a triangular pyramid, a triangular prism and the like.
  • the metal particles include, for example, those obtained by processing a metal thin film into a structure constituted by a closed surface having a side of less than 10 ⁇ m by fine processing represented by semiconductor lithography technology.
  • the size of the metal particles is, for example, in the range of 1 to 100 nm, preferably in the range of 5 to 70 nm, and more preferably in the range of 10 to 50 nm.
  • the plasmon excitation layer 105 is formed to have a plasma frequency higher than the frequency of light generated in the carrier generation layer 103 (hereinafter sometimes referred to as “light emission frequency”) when the carrier generation layer 103 alone is excited with excitation light. It is a fine particle layer or a thin film layer formed of a material. That is, plasmon excitation layer 105 has a negative dielectric constant at the light emission frequency. For example, in the range from the interface of the plasmon excitation layer 105 on the carrier generation layer 103 side to the carrier generation layer 103 side of the plasmon excitation layer 105 to the effective interaction distance of the surface plasmon represented by the formula (4), for example A portion of the dielectric layer having anisotropy may be disposed.
  • This dielectric layer has, for example, an optical anisotropy that differs in dielectric constant depending on the direction in the plane perpendicular to the stacking direction of the components of the light control unit 3, in other words, in the plane parallel to the interface of each layer . That is, in the dielectric layer, in a plane perpendicular to the stacking direction of the components of the light control unit 3, there is a magnitude relation between the dielectric constants in a certain direction and a direction perpendicular thereto. Due to this dielectric layer, in a plane perpendicular to the stacking direction of the components of the optical device 1, the effective dielectric constant of the incident side portion is different between a certain direction and a direction perpendicular thereto.
  • the effective dielectric constant of the incident side portion is set high enough to cause no plasmon coupling in a certain direction and low enough to cause plasmon coupling in the direction orthogonal thereto, for example, light incident on the wave number vector conversion layer 107
  • the angle of incidence and polarization of Therefore, for example, the light extraction efficiency of the wave vector conversion layer 107 can be further improved.
  • the carriers generated in the carrier generation layer 103 are surface plasmons in the plasmon excitation layer 105. Excite.
  • the carriers do not excite surface plasmons. That is, the above-mentioned effective dielectric constant high enough that the plasmon coupling does not occur is such a dielectric constant that the sum of the dielectric constant of the plasmon excitation layer 105 and the effective dielectric constant of the incident side becomes positive.
  • the effective dielectric constant low enough to cause coupling is a dielectric constant such that the sum of the dielectric constant of the plasmon excitation layer 105 and the effective dielectric constant of the incident side portion becomes negative or zero.
  • the efficiency with which the carriers generated in the carrier generation layer 103 couple to the surface plasmon is a condition under which the effective dielectric constant of the incident side portion and the sum of the dielectric constants of the plasmon excitation layer 105 become zero. Therefore, the condition that the sum of the dielectric constant of the plasmon excitation layer 105 and the lowest value of the effective dielectric constant of the incident side portion is 0 is the most preferable in that the directivity with respect to the azimuth angle is enhanced.
  • the directivity of the azimuth angle is not excessively enhanced in practice.
  • azimuth angles 315 degrees to 45 degrees, 135 degrees to 225 degrees High directional radiation is obtained in the range.
  • the constituent material of the dielectric layer having optical anisotropy include anisotropic crystals such as TiO 2 , YVO 4 , and Ta 2 O 5 .
  • the structure of the dielectric layer include a diagonal vapor deposition film of a dielectric, a diagonal sputtering film, and the like.
  • the constituent material of the plasmon excitation layer 105 is, for example, gold, silver, copper, platinum, palladium, rhodium, osmium, ruthenium, iridium, iron, tin, zinc, cobalt, nickel, chromium, titanium, tantalum, tungsten, indium, aluminum Or these alloys and the like.
  • gold, silver, copper, platinum, aluminum, and a mixture with a dielectric containing these as the main component is preferable, and gold, silver, aluminum, and a dielectric containing these as the main component are preferable. Mixtures with are particularly preferred.
  • the thickness of the plasmon excitation layer 105 is not particularly limited, and is preferably 200 nm or less, and particularly preferably about 10 to 100 nm.
  • the surface on the carrier generation layer 103 side of the plasmon excitation layer 105 may be roughened, for example.
  • the rough surface provides, for example, the scattering of the excitation light and the excitation of localized plasmons at the tip of the rough surface, thereby increasing the number of carriers excited in the carrier generation layer 103. As a result, for example, the utilization efficiency of the excitation light in the light control unit 3 can be improved.
  • the dielectric layer 104 is a layer containing a dielectric, and specifically, for example, SiO 2 nanorod array film; SiO 2 , AlF 3 , MgF 2 , Na 3 AlF 6 , NaF, LiF, CaF 2 , BaF 2 And thin films or porous films such as low dielectric constant plastics.
  • the thickness of the dielectric layer 104 is not particularly limited, and is, for example, in the range of 1 to 100 nm, preferably in the range of 5 to 50 nm, and more preferably in the range of 5 to 20 nm.
  • the constituent material of the dielectric layer 106 is, for example, diamond, TiO 2 , CeO 2 , Ta 2 O 5 , ZrO 2 , Sb 2 O 3 , HfO 2 , La 2 O 3 , NdO 3 , Y 2 O 3 , ZnO, A high dielectric constant material such as Nb 2 O 5 can be mentioned.
  • the thickness of the dielectric layer 106 is not particularly limited.
  • the wave vector conversion layer 107 is an emission unit that emits light emitted from the interface between the plasmon excitation layer 105 and the dielectric layer 106 from the optical device 1 by converting the wave vector.
  • the wave number vector conversion layer 107 has a function of causing the optical device 1 to emit the radiation in the direction substantially orthogonal to the interface between the plasmon excitation layer 105 and the dielectric layer 106.
  • the shape of the wave number vector conversion layer 107 is, for example, a surface relief grating; a periodic structure represented by a photonic crystal, or a quasi-periodic structure; a texture structure whose size is larger than the wavelength of light emitted from the optical device 1 Surface structure constituted by a surface); hologram; microlens array etc.
  • the quasi-periodic structure indicates, for example, an incomplete periodic structure in which part of the periodic structure is missing.
  • the shape is preferably a periodic structure represented by a photonic crystal, or a quasi-periodic structure; a microlens array or the like.
  • the photonic crystal preferably has a triangular lattice structure.
  • the wave number vector conversion layer 107 may have, for example, a structure in which a convex portion is provided on a flat base.
  • the distance from the surface on the carrier generation layer 103 side of the plasmon excitation layer 105 to the surface on the plasmon excitation layer 105 side of the carrier generation layer 103 is set shorter than the effective interaction distance d eff of surface plasmons. It is done.
  • the region with high coupling efficiency is, for example, the carrier generation layer 103 side surface of the plasmon excitation layer 105 from the position in the carrier generation layer 103 where carriers are generated (for example, the position in the carrier generation layer 103 where the phosphor is present).
  • the region is, for example, as narrow as about 200 nm, for example, in the range of 1 to 200 nm or in the range of 10 to 100 nm.
  • the carrier generation layer 103 is preferably disposed in the range of 1 to 200 nm from the plasmon excitation layer 105.
  • the carrier generation layer 103 is preferably disposed in the range of 10 to 100 nm from the plasmon excitation layer 105, and specifically, for example, The thickness of the dielectric layer 104 is 10 nm, and the thickness of the carrier generation layer 103 is 90 nm.
  • the carrier generation layer 103 be thinner.
  • the carrier generation layer 103 be thicker. Therefore, the thickness of the carrier generation layer 103 is determined based on, for example, the required light extraction efficiency and the light output rating.
  • the range of the region changes depending on the dielectric constant of the dielectric layer disposed between the carrier generation layer and the plasmon excitation layer, so that, for example, the dielectric may be selected according to the range of the region under predetermined conditions.
  • the thickness of the layer, the thickness of the carrier generation layer, and the like may be set as appropriate.
  • the excitation light may be incident on the light control unit 3 through, for example, a light guide.
  • the shape of the light guide may be, for example, a rectangular parallelepiped or a wedge shape, or a shape having a light emitting portion of the light guide or a light extraction structure inside the light guide.
  • the structure for light extraction preferably has, for example, a function of converting the incident angle of the excitation light to the carrier generation layer to an angle equal to or more than the predetermined incident angle to improve the absorptivity.
  • the surface of the light guide excluding the light emitting portion is subjected to a process for preventing the excitation light from being emitted from the surface, using, for example, a reflective material or a dielectric multilayer film.
  • the optical device of the present invention may include an optical member (for example, a mirror or the like) capable of adjusting the incident angle of the excitation light to the carrier generation layer to be equal to or more than the predetermined incident angle.
  • the plasmon excitation layer is sandwiched between the two dielectric layers, but as described above, the dielectric layer is not essential in the present invention, and, for example, The plasmon excitation layer may be disposed on the carrier generation layer.
  • the dielectric layer may be laminated only on one side of the plasmon excitation layer.
  • the configuration of the optical device of the present embodiment is shown in the perspective view of FIG.
  • the optical device of the present embodiment has the same configuration as the optical device of the first embodiment except that the light control unit does not include a dielectric layer.
  • the optical device 11 of the present embodiment includes light emitting elements 101 a and 101 b and a light control unit 13 as main components.
  • the light control unit 13 includes a carrier generation layer 103, a plasmon excitation layer 105 stacked on the carrier generation layer 103, and a wave number vector conversion layer (emission layer) 207 stacked on the plasmon excitation layer 105.
  • the light emitting elements 101 a and 101 b are disposed around the side surface of the light control unit 13.
  • the optical device 11 is configured such that the effective dielectric constant of the incident side portion is higher than or equal to the effective dielectric constant of the emission side portion.
  • the incident side portion includes the entire structure stacked on the carrier generation layer 103 side of the plasmon excitation layer 105 and a medium in contact with the carrier generation layer 103.
  • the entire structure includes a carrier generation layer 103.
  • the emission side portion includes the entire structure stacked on the wave number vector conversion layer 207 side of the plasmon excitation layer 105 and a medium in contact with the wave number vector conversion layer 207.
  • the whole structure includes a wave vector conversion layer 207.
  • the excitation light emitted from the light emitting elements 101a and 101b enters the light control unit 13 at the predetermined incident angle (and polarization).
  • the excitation light is then coupled to the waveguide and confined therein.
  • the confined excitation light excites the carrier generation layer 103 to generate carriers in the carrier generation layer 103.
  • the carriers couple with free electrons in the plasmon excitation layer 105 and excite surface plasmons at the interface between the carrier generation layer 103 and the plasmon excitation layer 105 and at the interface between the plasmon excitation layer 105 and the wave vector conversion layer 207.
  • the surface plasmon excited at the interface between the carrier generation layer 103 and the plasmon excitation layer 105 passes through the plasmon excitation layer 105 and propagates to the interface between the plasmon excitation layer 105 and the wave vector conversion layer 207.
  • the optical device 11 is configured such that the effective dielectric constant of the incident side portion is higher than or equal to the effective dielectric constant of the emission side portion, and the plasmon excitation layer of the wave number vector conversion layer 207
  • the distance from the surface of the wave number vector conversion layer 207 of the plasmon excitation layer 105 is arranged within the range of the effective interaction distance of surface plasmons at the end on the 105 side.
  • the wave number vector conversion layer 207 is a flat dielectric layer
  • surface plasmons at the interface between the plasmon excitation layer 105 and the wave number vector conversion layer 207 are not converted to light at the interface.
  • the surface plasmon at the interface is emitted (emitted) as light to the outside of the optical device 11 because the wave number vector conversion layer 207 has a function of extracting the surface plasmon as light, for example, a diffractive action.
  • the wavelength of the emitted light is equal to the wavelength of light generated when the carrier generation layer 103 is excited alone.
  • the radiation angle ⁇ rad of the emitted light is the refractive index of the light extraction side of the wave vector conversion layer 207 (that is, the medium in contact with the wave vector conversion layer 207), where the pitch of the periodic structure of the wave vector conversion layer 207 is ⁇ . Is given by the following equation (6).
  • the wave number of the surface plasmon excited at the interface between the carrier generation layer 103 and the plasmon excitation layer 105 exists only in the vicinity uniquely set by the equation (2). The same applies to the wave number of the surface plasmon excited at the interface between the plasmon excitation layer 105 and the wave vector conversion layer 207. Therefore, the emission angle of the emitted light is uniquely determined, and its polarization state is always p-polarization. That is, the emitted light is p-polarized light having very high directivity.
  • the excitation light incident on the carrier generation layer 103 the one not coupled to the waveguide is reflected by the light control unit 13 (for example, the plasmon excitation layer 105).
  • the reflected light is reflected by a reflector such as, for example, a metal mirror, a dielectric mirror, or a prism, and the light is incident on the light control unit 3 again to further improve the utilization efficiency of the excitation light.
  • the incident angle of the excitation light to the carrier generation layer 103 is the same as that of the first embodiment.
  • the wave number vector conversion layer 207 extracts surface plasmons excited at the interface between the plasmon excitation layer 105 and the wave number vector conversion layer 207 as light from the interface by converting the wave number vector, and emits the light from the optical device 11 It is an emitting part. That is, the wave vector conversion layer 207 converts the surface plasmon into light of a predetermined radiation angle, and causes the light to be emitted from the optical device 11. Furthermore, the wave number vector conversion layer 207 has a function of emitting radiation light from the optical device 11 so as to be substantially orthogonal to the interface between the plasmon excitation layer 105 and the wave number vector conversion layer 207, for example.
  • the wave number vector conversion layer 207 can use, for example, the same one as the wave number vector conversion layer 107 of the first embodiment.
  • the carrier generation layer is disposed in contact with the plasmon excitation layer, but the present invention is not limited to this example. Even if, for example, a dielectric layer having a thickness smaller than the effective interaction distance d eff of the surface plasmon represented by the formula (4) is disposed between the carrier generation layer and the plasmon excitation layer. Good. Moreover, although the said wave number vector conversion layer is arrange
  • a dielectric layer having optical anisotropy may be disposed between the carrier generation layer and the plasmon excitation layer.
  • the effective dielectric constant of the incident side portion is set high enough not to cause plasmon coupling in a certain direction, and low enough to cause plasmon coupling in the direction orthogonal thereto, for example, light enters the wave number vector conversion layer
  • the angle of incidence and polarization of the light can be further limited.
  • the light extraction efficiency of the wave number vector conversion layer can be further improved.
  • the optical device 21 of the present embodiment includes light emitting elements 101 a and 101 b and a light control unit 23 as main components.
  • the light control unit 23 includes a carrier generation unit 303, a plasmon excitation layer 305, and a dielectric layer 306.
  • the dielectric layer 306 is stacked on the plasmon excitation layer 305.
  • the carrier generation unit 303 is periodically embedded in the dielectric layer 306, penetrates the dielectric layer 306, and one end thereof is in contact with the plasmon excitation layer 305.
  • the carrier generation unit 303 has a function as the “emission layer” in the present invention.
  • the light emitting elements 101 a and 101 b are disposed around the side surface of the light control unit 23.
  • the distance from the surface on the carrier generation unit 303 side of the plasmon excitation layer 305 to the surface on the plasmon excitation layer 305 side of the carrier generation unit 303 is an effective interaction of surface plasmons represented by the equation (4). It is set shorter than the distance d eff .
  • excitation light from the light emitting elements 101 a and 101 b enters the light control unit 23, and the surface of the carrier generation unit 303 and the surface of the dielectric layer 306 opposite to the plasmon excitation layer 305 side
  • the operation of emitting light from the (light emitting surface 309) will be described.
  • the excitation light emitted from the light emitting elements 101a and 101b enters the carrier generation unit 303 at the predetermined incident angle (and polarization). Then, the carrier generation unit 303 is excited by the excitation light, and carriers are generated in the carrier generation unit 303. The carriers couple with free electrons in the plasmon excitation layer 305, and excite surface plasmons at the interface between the carrier generation unit 303 and the plasmon excitation layer 305. The excited surface plasmon is diffracted by the periodic structure formed by the carrier generation unit 303 and the dielectric layer 306, and is emitted as light through the light emitting surface 309 to the outside of the optical device 21.
  • the wavelength of the emitted light is equal to the wavelength of light generated when the carrier generation unit 303 is excited alone.
  • those not coupled to the surface plasmons are emitted from the optical device 21 as, for example, general light and propagating light.
  • the emission angle ⁇ rad of the emitted light is expressed by the equation (6).
  • the portion including the entire structure stacked on the dielectric layer 306 side of the plasmon excitation layer 305 and the medium in contact with the carrier generation unit 303 (and the dielectric layer 306) It serves both as the excitation light incident side portion and the light emission side portion defined.
  • the wave number of the surface plasmon excited at the interface between the dielectric layer 306 and the plasmon excitation layer 305 exists only in the vicinity uniquely set by the equation (2). Therefore, the emission angle of the emitted light is uniquely determined, and its polarization state is always p-polarization. That is, the emitted light is p-polarized light having very high directivity.
  • the light distribution distribution of the propagation light by the carriers not coupled with the surface plasmons is superimposed on the light distribution distribution of the emitted light.
  • the carrier generation unit 303 is a layer that absorbs excitation light to generate carriers, and the functions, constituent materials, and the like thereof are the same as, for example, the carrier generation layer 103 of the first embodiment.
  • the carrier generation unit 303 may include, for example, the metal particles as in the carrier generation layer 103 of the first embodiment.
  • the metal and the effect etc. which comprise the said metal particle are the same as that of what was shown in the said Embodiment 1.
  • the constituent material of the dielectric layer 306 is, for example, diamond, TiO 2 , CeO 2 , Ta 2 O 5 , ZrO 2 , Sb 2 O 3 , HfO 2 , La 2 O 3 , NdO 3 , Y 2 O 3 , ZnO,
  • a high dielectric constant material such as Nb 2 O 5 can be mentioned.
  • the thickness of the dielectric layer 306 is not particularly limited, and is, for example, in the range of 1 to 100 nm, preferably in the range of 5 to 50 nm, and more preferably in the range of 5 to 10 nm.
  • the function, constituent material, shape, and the like of the plasmon excitation layer 305 are, for example, the same as those of the plasmon excitation layer 105 of the first embodiment.
  • a dielectric layer having optical anisotropy may be disposed on the side of the plasmon excitation layer 305 on which the dielectric layer 306 is stacked.
  • the configuration, effects and the like of this dielectric layer are the same as those shown in the first embodiment.
  • the carrier generation unit is embedded in the dielectric layer, but the present invention is not limited to this example, for example, the dielectric layer and the dielectric layer
  • the dielectric portion may be periodically embedded in the carrier generation layer by reversing the relationship with the carrier generation portion. Even with such a configuration, the same effect as described above can be obtained.
  • generation part are set to the same height, this invention The present invention is not limited to this example, and does not necessarily have to have the same height.
  • the carrier generation unit may be connected, for example, over the entire surface of the dielectric layer, or one end of the carrier generation unit may not be in contact with the plasmon excitation layer.
  • the optical device of the present embodiment is an example of an optical device provided with a half wave plate as a polarization conversion element.
  • the structure of the optical apparatus of this embodiment is shown in the schematic diagram of FIG.
  • the optical device 31 of the present embodiment includes the optical device 1 and a half wave plate 410 as main components.
  • the optical device 1 is the optical device of the first embodiment shown in FIG.
  • the half-wave plate 410 is disposed on the side of the wave number vector conversion layer 107 of the optical device 1.
  • the half-wave plate 410 is indicated by a two-dot chain line.
  • the light is emitted from the wave number vector conversion layer 107. Since the light is p-polarized as described above, the field pattern of the light has a radial polarization direction. For this reason, the light is axisymmetrically polarized (see, for example, [0104] of WO 2011/040528). Then, the light (axisymmetric polarization) is incident on the half wave plate 410. At this time, the axisymmetric polarization is converted into linearly polarized light by the half wave plate 410. As described above, in the optical device of the present embodiment, the polarization state of the light can be aligned (see, for example, [0105] in the same International Publication).
  • the half-wave plate 410 is not particularly limited, and examples thereof include conventionally known ones. Specifically, for example, the following half-wave plate disclosed in WO 2011/040528 may be mentioned.
  • the half-wave plate disclosed in the above publication includes, for example, a pair of glass substrates each having an alignment film formed thereon, a liquid crystal layer disposed with the alignment films of these substrates facing each other, and the glass substrate, And a spacer provided between the substrates.
  • the liquid crystal layer, n 0 the refractive index for the ordinary light, the refractive index when the n e for extraordinary light, a refractive index greater than n 0 the refractive index n e is.
  • ⁇ is the wavelength of incident light in vacuum.
  • liquid crystal molecules are arranged concentrically with respect to the center of the half wave plate.
  • the liquid crystal molecule has an angle of ⁇ between the main axis of the liquid crystal molecule and the coordinate axis in the vicinity of the main axis, and the angle between the coordinate axis and the polarization direction is ⁇ . It is oriented in a direction satisfying any of the relational expressions of 2 ⁇ -180.
  • axisymmetric polarization is converted into linearly polarized light by the 1 ⁇ 2 wavelength plate, but the present invention is not limited to this example.
  • the axisymmetric polarization is circular It may be converted to polarized light.
  • the optical device of the first embodiment is used in the optical device of the present embodiment, the present invention is not limited to this example, for example, using the optical device of the second or third embodiment. It is also good.
  • Embodiment 5 The image display device of the present embodiment is an example of a three-panel projection display device (LED projector).
  • FIG. 9 shows the configuration of the LED projector of this embodiment.
  • Fig.9 (a) is a schematic perspective view of the LED projector of this embodiment
  • FIG.9 (b) is a top view of the same LED projector.
  • the LED projector 10 includes the optical devices 1r, 1g, 1b of any of the three embodiments 1 to 4, three liquid crystal panels 502r, 502g, 502b, and color synthesis.
  • An optical element 503 and a projection optical system 504 are included as main components.
  • the optical device 1r and the liquid crystal panel 502r, the optical device 1g and the liquid crystal panel 502g, and the optical device 1b and the liquid crystal panel 502b form an optical path, respectively.
  • the optical devices 1r, 1g, and 1b are respectively made of different materials for red (R) light, green (G) light, and blue (B) light.
  • the liquid crystal panels 502r, 502g, and 502b receive the light emitted from the optical device and modulate the light intensity in accordance with the image to be displayed.
  • the color combining optical element 503 combines the light modulated by the liquid crystal panels 502r, 502g, and 502b.
  • the projection optical system 504 includes a projection lens that projects the light emitted from the color combining optical element 503 onto a projection surface such as a screen.
  • FIG. 10 shows the light emission wavelengths (Rs, Gs, Bs) of the optical device used for the LED projector 10, and the excitation wavelengths (Ra, Ga, Ba) and the light emission wavelengths (Rr, Gr, Br) of the carrier generation layer. It shows the relationship with the strength. As shown in FIG. 10, the emission wavelengths Rs, Gs, Bs of the optical device for R light, the optical device for G light, and the optical device for B light, and the excitation wavelengths Ra, Ga, Ba of the carrier generation layer are approximately the same. It is set equally.
  • the emission wavelengths Rs, Gs, and Bs of the optical device, the excitation wavelengths Ra, Ga, and Ba of the carrier generation layer, and the emission wavelengths Rr, Gr, and Br of the carrier generation layer do not overlap with each other. It is set.
  • the emission spectra of the R optical device, the G optical device, and the B optical device are set to match the excitation spectrum of each carrier generation layer or to be within the excitation spectrum. There is.
  • the emission spectrum of the carrier generation layer is set so as not to almost overlap with any excitation spectrum of the carrier generation layer.
  • the LED projector 10 modulates the image on the liquid crystal panel for each of the light paths by a control circuit unit (not shown).
  • the LED projector 10 can improve the brightness of the projection image by including the optical device according to any one of the first to fourth embodiments.
  • the optical device since the optical device exhibits very high directivity, it can be miniaturized, for example, without using an illumination optical system.
  • the LED projector of the present embodiment shown in FIG. 9 is a three-plate type liquid crystal projector
  • the present invention is not limited to this example, and may be, for example, a single-plate type liquid crystal projector.
  • the image display device of the present invention may be a projector using not only the above-described LED projector but also, for example, a light emitting element other than an LED (for example, a laser diode, a super luminescent diode, etc.) It may be an image display device combined with a backlight or a backlight using MEMS.
  • the optical device of the present invention has an improved absorption efficiency of excitation light. Therefore, the image display device using the optical device of the present invention can be used as a projector or the like.
  • the projector may be, for example, a mobile projector, a next-generation rear projection TV, a digital cinema, a retinal scanning display (RSD), a head up display (HUD), or a mobile phone, digital
  • RSD retinal scanning display
  • HUD head up display
  • a mobile phone digital
  • a camera a built-in projector (embedded projector) in a notebook personal computer and the like, and application to a wide range of markets is possible. However, the application is not limited and can be applied to a wide range of fields.

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
PCT/JP2012/075696 2012-01-07 2012-10-03 Dispositif optique et dispositif d'affichage d'image Ceased WO2013103038A1 (fr)

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Citations (3)

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JP2009206459A (ja) * 2008-02-29 2009-09-10 Sharp Corp 色変換部材およびそれを用いた発光装置
WO2011040528A1 (fr) * 2009-09-30 2011-04-07 日本電気株式会社 Élément optique, dispositif de source lumineuse et dispositif d'affichage par projection
WO2011142456A1 (fr) * 2010-05-14 2011-11-17 日本電気株式会社 Élément d'affichage, écran, et dispositif d'affichage par projection

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JP5424229B2 (ja) * 2007-09-28 2014-02-26 独立行政法人産業技術総合研究所 酸化膜を用いた光導波モードセンサー及びその製造方法
JP2010096645A (ja) * 2008-10-17 2010-04-30 National Institute Of Advanced Industrial Science & Technology 周期構造を有するマイクロプレート、並びに、それを用いた表面プラズモン励起増強蛍光顕微鏡、蛍光マイクロプレートリーダーおよび特異的な抗原抗体反応の検出方法

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JP2009206459A (ja) * 2008-02-29 2009-09-10 Sharp Corp 色変換部材およびそれを用いた発光装置
WO2011040528A1 (fr) * 2009-09-30 2011-04-07 日本電気株式会社 Élément optique, dispositif de source lumineuse et dispositif d'affichage par projection
WO2011142456A1 (fr) * 2010-05-14 2011-11-17 日本電気株式会社 Élément d'affichage, écran, et dispositif d'affichage par projection

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