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WO2013153172A1 - Composant semi-conducteur optoélectronique - Google Patents

Composant semi-conducteur optoélectronique Download PDF

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Publication number
WO2013153172A1
WO2013153172A1 PCT/EP2013/057616 EP2013057616W WO2013153172A1 WO 2013153172 A1 WO2013153172 A1 WO 2013153172A1 EP 2013057616 W EP2013057616 W EP 2013057616W WO 2013153172 A1 WO2013153172 A1 WO 2013153172A1
Authority
WO
WIPO (PCT)
Prior art keywords
reflector
housing body
optoelectronic semiconductor
semiconductor component
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2013/057616
Other languages
German (de)
English (en)
Inventor
Stefan Stegmeier
Karl Weidner
Stefan Illek
Walter Wegleiter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2013153172A1 publication Critical patent/WO2013153172A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses

Definitions

  • Optoelectronic Semiconductor Device An optoelectronic semiconductor device is specified.
  • An object to be solved is to specify an optoelectronic semiconductor component whose spatial and / or spectral emission characteristic can be adjusted during operation.
  • this includes
  • the carrier may be, for example, a printed circuit board, a ceramic or a metal core board, or the carrier comprises at least one leadframe.
  • the carrier comprises electrical connection devices and electrical conductor tracks.
  • the carrier is in particular the component mechanically supporting and stabilizing the semiconductor component.
  • this includes
  • the at least one semiconductor chip is provided for generating a radiation.
  • the semiconductor chip is preferably a light-emitting diode or a laser diode.
  • the semiconductor chip emits radiation in the near ultraviolet or in the blue during operation Spectral range. It is also possible that the semiconductor chip emits colored light or white light.
  • the semiconductor chip is attached to the carrier top side.
  • the semiconductor chip is attached to the carrier top side.
  • the semiconductor component a housing body.
  • the semiconductor chip is preferably mounted in the housing body. Seen in plan view, the semiconductor chip may be surrounded all around by the housing body and in a recess in the
  • Housing body are located.
  • housing body on the carrier top In particular, the housing body is mechanically fixed and permanently connected to the carrier top.
  • the housing body may be attached directly or indirectly to the carrier top. It is also possible that the housing body surrounds the carrier partially or completely.
  • Semiconductor device at least one optical element.
  • the optical element is located on the housing body.
  • the optical element is permanently and firmly connected to the housing body.
  • the term permanent can mean that the optical element in the
  • the optical connector does not dissolve from the housing body. According to at least one embodiment, the optical connector
  • the optical element follows the semiconductor chip optically. This can mean that a majority or all of the semiconductor chip in the
  • Operation generated radiation reaches the optical element.
  • the radiation generated by the semiconductor chip undergoes a through the optical element
  • the optical detector According to at least one embodiment, the optical detector
  • Element adapted to be formed in the operation of the semiconductor device selectively or surface.
  • Deformation of the optical element is a spatial and / or spectral radiation characteristic of the semiconductor device adjustable.
  • the deformation of the optical element is particularly preferably reversible.
  • the semiconductor device can be connected to a control unit or provided with a control unit.
  • a targeted control of the emission characteristic is possible via such a control unit.
  • the optical element is a reflector or the optical element comprises one or more reflectors. It is possible that the optical element is free of one
  • refractive component such as a lens
  • this includes
  • Optoelectronic semiconductor device a carrier on a carrier top. On the carrier top is at least one optoelectronic semiconductor chip to a
  • Radiation generation is provided attached. Further is located on the carrier top, a housing body in which the semiconductor chip is mounted. At least one optical element, which preferably comprises a reflector or is formed by a reflector, is located on the housing body. The optical element is arranged downstream of the semiconductor chip along a radiation direction. Furthermore, the optical element is adapted to operate during operation of the
  • spot lights or office lighting several lighting situations may be desirable, for example, to switch between a room lighting and a
  • spectral compositions of the emitted radiation may be desired. This can be realized by separate, the semiconductor device downstream optics having movable components. Such optics, however, lead to a relatively large amount of space. Furthermore, a semiconductor component may comprise a plurality of light-emitting diode chips which are independent
  • the specified semiconductor device is a compact system with only a comparatively small footprint given over the long-term stable a spatial and / or spectral emission is adjustable.
  • the optical element which, as stated above, is preferably a reflector, is located in a recess of the housing body. It is possible that the optical element, which, as stated above, is preferably a reflector, is located in a recess of the housing body. It is possible that the optical element, which, as stated above, is preferably a reflector, is located in a recess of the housing body. It is possible that the optical element, which, as stated above, is preferably a reflector, is located in a recess of the housing body. It is possible that the optical
  • Element is completely in the recess and does not protrude from the recess.
  • the optical element it is possible for the optical element to be arranged downstream of the recess and to completely or partially cover the recess.
  • the optical element is directly on the housing body
  • the optisehe element has one or more cuts.
  • the incisions preferably extend in the radial direction and serve as
  • the reflector is configured to be indirectly deformed by the housing body. This can mean that a force on the
  • Housing body acts and on this force a Shape of the housing body is changed. This change of shape continues on the reflector, so that in turn the
  • Reflector is changed in its shape.
  • the shape changes of both the housing body and the reflector are reversible.
  • the housing body remains during deformation preferably positive fit to the reflector. This can mean that a contact surface between the housing body and the reflector does not change or does not change significantly during deformation. By deforming then preferably no partial delamination of the housing body from the reflector instead.
  • a material of the housing body at a temperature of 300 K has a hardness of at most Shore A 70 or at most Shore A 50.
  • the housing body is formed of a relatively soft material.
  • a thermal expansion coefficient of the material of the housing body at a temperature of 300 K is at least 100 ⁇ 10 -4 / or at least 150 ⁇ 10 -4 / or at least 200 ⁇ 10 -4 / k.
  • the housing body then has a large thermal, in particular in comparison to the semiconductor chip
  • a thermal expansion coefficient of the carrier at a temperature of 300 K is at most 9 ⁇ 10 -6 1 / K or at most 7 ⁇ 10 -6 1 / K.
  • the thermal expansion coefficient of the carrier preferably corresponds approximately to the thermal expansion coefficient of the semiconductor chip.
  • the reflector is designed to be reversibly deformed selectively or over a range of at least 10 ⁇ m or by at least 25 ⁇ m or, preferably, by at least 50 ⁇ m or by at least 100 ⁇ m.
  • the numerical values mentioned are a maximum change in position of a particular region of the
  • Both reflectors are preferably completely mounted in the recess of the housing body.
  • Reflector optically downstream of the inner reflector This may mean that only the radiation of the semiconductor chip which has already been reflected at the inner reflector is passed to the outer reflector. Reflective surfaces of the reflectors are preferably facing each other.
  • Optoelectronic semiconductor device one or more
  • the at least one conversion element is configured to convert the radiation emitted by the semiconductor chip partially or completely into radiation of another, in particular larger wavelength.
  • Conversion element partially or completely between the inner reflector and the semiconductor chip.
  • the Conversion element can the inner reflector and the
  • the conversion element is molded positively to the semiconductor chip and / or the inner reflector.
  • Extension of the semiconductor chip corresponds.
  • the lateral extent of the conversion element and / or of the inner reflector lies between the single and the double of the lateral extent of the semiconductor chip.
  • Reflector on a diameter of at least a 1.5-compartment or at least a 4-compartment of the central lateral extent of the semiconductor chip and / or the
  • Semiconductor component forms and / or the radiation emitted by the conversion element radiation is subsequently influenced by the optical element.
  • Interspace and / or the potting compound between the inner reflector and the outer reflector can be in direct contact with the two reflectors.
  • the inner reflector seen in a cross section in particular perpendicular to a main radiation side of the semiconductor chip, a triangular basic shape or the basic shape of a trapezoid.
  • the inner reflector Towards the semiconductor chip, the inner reflector preferably tapers.
  • the outer reflector has the shape of a parabola or a hyperbola. In the direction away from the semiconductor chip, the outer reflector expands preferentially.
  • this includes
  • Optoelectronic semiconductor device at least one
  • the deformation device is configured to deform the housing body, the inner reflector and / or the outer reflector.
  • Deformation device can work thermally, mechanically and / or electrically.
  • the deformation device is preferably embedded in the housing body, attached to the housing body or attached to the support. geometric
  • geometric dimensions of the housing body preferably at most by a factor of 2.
  • the housing body preferably at most by a factor of 2.
  • Deformation device from its geometric dimensions ago, at most as large as the housing body. According to at least one embodiment, the
  • Temperierelement is adapted to temper the housing body and / or the carrier. Over a
  • the reflector can be reversibly deformed. Likewise, it is possible that an intermediate body, in particular attached to the inner reflector, is deformed via the tempering element.
  • Temperierelement adapted to set a temperature within a temperature range of at least 40 K. In other words, is of the tempering a
  • Temperature range of at least 40 K overvoltage This temperature range preferably spans at least 60 K or at least 80 K.
  • Deformation device formed by one or more actuators.
  • the at least one actuator is to one
  • the actuator is, for example, a piezoelectric element or so-called nanotube actuators, which are based for example on carbon nanotubes.
  • the at least one actuator is located in the housing body and is preferably mechanically coupled to the reflector and can touch the reflector.
  • the actuator of the reflector selectively or flat, reversible deformable. According to at least one embodiment is the
  • the squeezing device is located on the
  • Housing body and is adapted to deform over a deformation of the housing body, the reflector reversible.
  • the squeezing device outer
  • the squeezing device can be controlled manually or automatically. It is possible that the
  • Crimping device is electrically operable and controllable.
  • the reflector or at least one of the reflectors is fastened directly to side walls of the recess in the housing body.
  • the reflector then does not dissolve in the intended use of the semiconductor device from the side walls of the recess.
  • the reflector may be formed on the sidewalls or attached to the sidewalls, such as via an adhesive.
  • Conversion element or is at least one of
  • Conversion elements optically downstream of the reflector It is possible that a light exit surface of the semiconductor device is then formed by the conversion element.
  • the conversion element preferably completely covers the recess in the housing body. According to at least one embodiment, the
  • the Conversion element one or more phosphors.
  • the phosphors are, for example, rare earth-doped garnets, orthosilicates, silicon oxynitrides or silicon nitrides.
  • the phosphors can have particle shape.
  • At least one of the phosphors or all phosphors are distributed inhomogeneously in the conversion element.
  • the phosphors can in terms of their concentration
  • a radius of curvature of the reflector can be reversibly changed by the deformation of the housing body and / or the reflector. Changing the radius of curvature also makes it possible to change the focal length of the reflector. Due to the deformation of the radius of curvature, the focal length can preferably be changed by at least a factor of 1.2 or by at least a factor of 1.5.
  • the housing body is made of a polysiloxane or of a polymer such as
  • FIGS 1 to 12 and 14 are schematic representations of
  • the semiconductor device 1 comprises a carrier 2 with a carrier top side 20.
  • the carrier 2 preferably includes electrical conductor tracks and electrical connection devices, which are not shown in the figures.
  • Optoelectronic semiconductor chip 3 is mounted, which has a the carrier top 20 remote from the radiation main side 30.
  • the semiconductor chip 3 is
  • a housing body 4 is mounted on the carrier top 20.
  • the housing body 4 preferably has one
  • Case body 4 the semiconductor chip 3 around.
  • Carrier top 20 may be completely covered by the housing body 4, together with the semiconductor chip 3.
  • Housing body 4 side surfaces of the semiconductor chip 3 is touched and formed on these side surfaces. Different to
  • the housing body 4 does not touch the semiconductor chip 3 and is arranged at a distance therefrom.
  • the housing body 4 has seen in cross section
  • Recess 45 is a reflector 5.
  • the reflector 5 is optically downstream of the semiconductor chip 3, so that at least part of a radiation R, which is generated by the semiconductor chip 3 during operation, reaches the reflector 5.
  • the radiation R is symbolized in the figures only greatly simplified. As in all other embodiments, it is optionally possible that in the recess 45 on the
  • a conversion element 6 is applied. Via the conversion element 6, part of the radiation generated by the semiconductor chip 3 is converted into radiation of a different wavelength. It is possible that the
  • Recess 45 is not completely filled by the conversion element 6, but that the conversion element. 6 essentially limited to the main radiation side 30, seen in plan view.
  • the semiconductor device 1 may optionally have a
  • Compound 7 have.
  • the potting compound 7 fills,
  • the potting compound 7 has no flat, the carrier top side 20 facing away from, but that the potting compound 7 is formed lens-shaped and is set up for a radiation focusing.
  • the potting compound 7 is preferably clear.
  • the semiconductor device 1 has a deformation device, see FIGS. 2 to 5.
  • the deformation device which is not shown in FIG.
  • Reflector 5 reversibly changeable. As a result, an optical path of the radiation emitted by the semiconductor component 1 and thus a radiation characteristic is adjustable. In particular, a focal length can be regulated by the deformation of the reflector 5.
  • the deformation device is by a
  • Crimping device 83 formed.
  • a force F can be exerted on the housing body 4 along a lateral direction.
  • the squeezing device 83 is either mounted at several points around the housing body 4 or surrounds the housing body 4 all around, for example, annular. A change in the shape of the
  • Reflector 5 is shown in FIG. 2 by a dashed line
  • the reflector 5 preferably has a small thickness, for example at most 5 ⁇ or at most 10 ⁇ or at most 20 ⁇ .
  • the reflector 5 can by a
  • the reflector is made of a reflective material or a
  • the reflector 5 is designed as a bimetal with materials of different thermal expansion coefficients. To a better mechanical adhesion of the preferred metallic reflector 5 to the housing body 4 and / or on the
  • the reflector 5 may be provided with a thin, radiation-permeable bonding layer, for example with or from a metal such as titanium and / or with a thickness of a few nanometers. Also in all
  • the reflector can be constructed.
  • the deformation device is formed by a plurality of electromechanical actuators 82 which selectively apply a force F to the reflector 5 and deform it. It is possible that the reflector 5 at times by the
  • Deforming device formed by tempering 81.
  • tempering 81 the housing body 4 is heated or cooled, relative to a stationary
  • Temperierelement may be a heating resistor, a heating coil or a Peltier element.
  • a thickness of the housing body 4 is for example at least 500 ⁇ or at least 800 ⁇ to achieve sufficient deformation of the reflector 5 due to the thermal expansion of a material of the housing body 4.
  • a thickness of the housing body 4 preferably changes by at least a factor of 3 or by at least a factor of 10th
  • tempering elements 81 are limited to an edge region of the carrier 2 and a surface immediately below the
  • FIG. 6 is a schematic plan view of the
  • the reflector 5 can also be a
  • the reflector 5 as in all other embodiments, radially extending cuts 52.
  • the number of cuts 52 is preferred between incisions 3 and 64 or between 3 and 16 inclusive. Via the incisions 52 a deformation of the reflector 5 is facilitated, in particular since a material of the reflector 5 can have a greater hardness and lower deformability than the material of the housing body 4.
  • the semiconductor device 1 according to the embodiment, as shown in Figure 7 in the sectional view, has an inner reflector 5a and an outer reflector 5b.
  • the inner reflector 5a deflects the radiation R emitted by the semiconductor chip 3 toward the outer reflector 5b.
  • Reflector 5a also serves for electrical contacting of the semiconductor chip 3. Furthermore, it is in all
  • Embodiments possible that the conversion element 6 and / or the inner reflector 5a completely cover the semiconductor chip 3, seen in plan view. Contrary to what is shown, the conversion element 6 and / or the inner reflector 5a can terminate flush with the main radiation side 30 and extend congruently with the main radiation side 30, as seen in plan view.
  • FIGS. 8B, 8C and 8D correspond to the deformation devices as shown in connection with FIGS. 3, 4 and 5.
  • FIG. 9 also shows a schematic plan view of the semiconductor component according to FIGS. 7 and 8. Unlike shown, the inner reflector 5a may also have other basic shapes, see FIG. 6.
  • FIG. 10 shows further exemplary embodiments of the invention
  • Semiconductor device 1 shown in sectional views. The associated schematic plan view is shown in FIG. 11.
  • Reflector 5a deformed, symbolized in Figure 10A by a dashed line.
  • the outer reflector 5b remains from the
  • an intermediate body 85 is attached to the side of the inner reflector 5a facing away from the carrier 2. On the intermediate body 85, the force F by the intermediate body 85.
  • the inner reflector 5a is deformed.
  • the conversion element 6, see Figures 8A to 8D, which can also be deformed.
  • the transparent potting 7 is present, which can also be formed as a gas-filled gap.
  • the transparent potting 7 may be decoupled from the inner reflector 5a and will not deform itself upon deformation of the inner reflector 5a. Furthermore, the potting compound 7 may have a surface curvature in order to reduce optical influences due to the deformation.
  • the actuator 82 in particular in the form of a piezoelectric element, is mounted between a counter-body 84, which is immovable, and the inner reflector 5a. In Figure IOC, the deformation device is through the
  • Tempering elements 81 formed over which a thermal deformation of the intermediate body 85 is reached.
  • FIG. 10D it is shown that the inner reflector 5a is deformed only punctually, in particular by actuators 82. This may change a curvature of the inner reflector 5a, for example from a concave curvature to a convex curvature or vice versa.
  • actuators 82 This may change a curvature of the inner reflector 5a, for example from a concave curvature to a convex curvature or vice versa.
  • Sections 52 provided, as also possible in connection with all other embodiments.
  • the outer reflector 5b have incisions, unlike
  • the reflector 5a, 5b is the reflector
  • Subordinate conversion element 6 The conversion element 6 can completely cover the recess 45.
  • Conversion element 6 is a gradient with respect to a concentration of at least one phosphor. Depending on the deformation of the reflectors 5a, 5b, therefore, a spectral characteristic of the radiation R may change, so that a radiation R 'deviating therefrom is generated, compare FIG. 12B.
  • the inner reflector 5a is merely optional and can also be omitted.
  • the inner reflector 5a and / or the outer reflector 5b are deformed, preferably as described in connection with FIGS. 8 and 10. Notwithstanding FIG. 12A, it is possible for a further conversion element to be present between the inner reflector 5a and the semiconductor chip 3, see in particular FIG. 10.
  • Conversion element 6 two areas 61, 62 on.
  • the region 61 is frusto-conical or truncated pyramid-shaped and surrounded by the region 62.
  • In the areas 61, 62 is a phosphor in each case in a constant
  • one of the regions 61, 62 is free of a phosphor.
  • the areas 61, 62 are sharply delimited from each other. According to FIG. 13B, the regions 61, 62, 63 are sharp
  • regions 61, 62, 63 may alternatively or additionally also be layered in a direction perpendicular thereto.
  • the regions 61, 62 continuously merge into one another. This may optionally also be the case in connection with FIGS. 13A and 13B.
  • the conversion elements 6, as illustrated in FIG. 13, each have a rectangular cross section
  • Semiconductor chip 3 facing away from the top and, for example, similar to a concave lens or a
  • Be shaped convex lens In the embodiment of Figure 14 are not the
  • Reflectors 5a, 5b deformed, but a force F is applied to the conversion element 6 itself, for example by deformation devices, such as in particular
  • FIG. 14A obtainable, compare the radiation R 'in FIG. 14B.
  • a gradient in the concentration of at least one phosphor is preferably present in the conversion element 6, cf. FIG. 13.

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Abstract

Dans au moins une forme de réalisation, le composant semi-conducteur optoélectronique (1) contient un support (2). Une puce semi-conductrice optoélectronique (3) est appliquée sur un côté supérieur (20) du support. Un corps de boîtier (4) dans lequel est appliquée la puce semi-conductrice (3) se trouve également sur le côté supérieur (20) du support. Un élément optique (5) tel qu'un réflecteur se trouve sur le corps de boîtier (4). L'élément optique (5) est placé après la puce semi-conductrice (3) le long d'une direction de rayonnement. L'élément optique (5) est conçu pour être déformé ponctuellement ou en surface lors du fonctionnement du composant semi-conducteur (1) de sorte qu'une caractéristique de rayonnement spatiale et/ou spectrale du composant semi-conducteur (1) peut être réglée.
PCT/EP2013/057616 2012-04-12 2013-04-11 Composant semi-conducteur optoélectronique Ceased WO2013153172A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012103161A DE102012103161A1 (de) 2012-04-12 2012-04-12 Optoelektronisches Halbleiterbauteil
DE102012103161.4 2012-04-12

Publications (1)

Publication Number Publication Date
WO2013153172A1 true WO2013153172A1 (fr) 2013-10-17

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WO (1) WO2013153172A1 (fr)

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DE102014119516B4 (de) * 2014-12-23 2018-12-06 Iventum Gmbh Reflektorkörper für Lampen
DE102015116710A1 (de) * 2015-10-01 2017-04-06 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102017124455A1 (de) 2017-10-19 2019-04-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil mit einem Wirkungselement
DE102021101456A1 (de) 2021-01-25 2022-07-28 Audi Aktiengesellschaft Verfahren zum Betrieb einer Beleuchtungseinrichtung eines Kraftfahrzeugs und Kraftfahrzeug

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JPH04363804A (ja) * 1991-04-10 1992-12-16 Matsushita Electric Works Ltd 照明器具
US20060062000A1 (en) * 2004-09-20 2006-03-23 Peterson Mark D Luminaire having a deformable reflector well
US20070090379A1 (en) * 2005-10-21 2007-04-26 Goon Wool K Light emitting device with adjustable reflector cup
US20090103293A1 (en) * 2007-10-17 2009-04-23 Xicato, Inc. Illumination Device with Light Emitting Diodes and Moveable Light Adjustment Member
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