WO2013151095A1 - Film formation method and method for manufacturing organic el display device - Google Patents

Description

Film-forming method and organic EL display device manufacturing method

The present invention relates to a film forming method for sealing an organic layer, and a method for manufacturing an organic EL display device including the organic layer.

Organic EL (Electro Luminescence) display devices are attracting attention as display devices that have a faster response speed and a wider viewing angle than liquid crystal display devices. An organic layer used in an organic EL display device includes an organic compound, and reacts with a minute amount of moisture or oxygen to deteriorate its characteristics, thereby impairing the life of the display device. Therefore, sealing of the organic layer is indispensable for manufacturing the organic EL display device.

As a method for forming a film for sealing the organic layer, a plasma CVD (Chemical Vapor Deposition) method, a sputtering method, or the like is used. In the plasma CVD method, the source gas is turned into plasma and the atoms and molecules of the source gas are activated to form a film made of the atoms and molecules of the source gas. In addition, the plasma CVD method has an advantage that a film can be uniformly formed even on an uneven surface.

The sputtering method has an advantage that a high-density thin film with high adhesion can be formed, but has a disadvantage that a film-forming target is damaged by film stress.

Here, the film configuration of the organic device described in Patent Document 1 is shown in FIG. In Patent Document 1, as a method for forming a protective film for sealing the organic element 101, an organic layer composed of a first electrode 103 and a second electrode 105 provided on a substrate 110 and an organic compound 104 disposed therebetween is disclosed. A first protective film 106 is formed by a plasma CVD method as a first protective film forming step so as to cover the element 101, and a second protective film 107 is formed on the first protective film 106 by a sputtering method as a second protective film forming step. A method of forming is described.

By forming the first protective film 106 by the plasma CVD method, a film with good coverage can be formed on the organic element 101 having a step without damaging the film stress.

Further, by forming the second protective film 107 by a sputtering method, a film having high adhesion can be formed at high speed.

Japanese Patent Publication “Japanese Patent Laid-Open No. 2008-108652 (Publication Date: May 8, 2008)”

However, the method for forming the protective film of Patent Document 1 has the following problems.

As shown in FIG. 11, since the organic compound 104 is disposed between the first electrode 103 and the second electrode 105, the upper and lower surfaces of the organic compound 104 are covered with the electrodes 103 and 105. On the other hand, the side surface of the organic compound 104 is not covered with the electrodes 103 and 105 but is exposed.

Also, it is difficult to accurately form the second electrode 105 on the upper surface of the organic compound 104, and a part of the upper surface of the organic compound 104 is exposed. Note that if the second electrode 105 having an area larger than the area of the upper surface of the organic compound 104 is formed, a portion of the second electrode 105 that protrudes from the upper surface of the organic compound 104 (protrusion) causes coverage failure. Cause problems.

As described above, the organic compound 104 has an exposed portion. When the plasma CVD method is used as the first protective film forming step, the exposed portion is exposed to plasma, and the organic compound 104 is damaged.

When the organic compound 104 is damaged by the plasma, a dark spot (non-light emitting region) is generated, and the display quality as an organic EL display device is lowered, the light emission efficiency is lowered, or the life of the organic EL display device is reduced. Cause problems.

Accordingly, the present invention has been made to solve the above-described problems, and its object is to reduce the damage to the organic layer and form a protective film for sealing the organic layer and an organic EL display device. It is in providing the manufacturing method of.

In order to solve the above problems, the film forming method of the present invention provides
A film forming method for forming a protective film covering an organic element by vapor deposition,
A first protective film forming step of forming a first protective film covering the organic element;
A second protective film forming step of forming a second protective film covering the first protective film,
When the region facing the organic element is a first region and the region outside the first region is a second region,
In the first protective film forming step, the first region has a lower density of charged particles than the second region,
The volume of the protective film formed per unit time in the second protective film forming step is larger than the volume of the protective film formed per unit time in the first protective film forming step.

As described above, the film forming method of the present invention includes the first protective film forming step for forming the first protective film covering the organic element, and the second protection for forming the second protective film covering the first protective film. A region where the organic element faces is a first region, and a region outside the first region is a second region, in the first protective film forming step, In the first region, the density of charged particles is lower than that in the second region, and the volume of the protective film formed per unit time in the second protective film forming step is per unit time in the first protective film forming step. It is a method characterized by being larger than the volume of the protective film to be formed.

Therefore, it is possible to reduce the damage given to the organic layer, and to achieve a film forming method for forming a protective film for sealing the organic layer and a method for manufacturing an organic EL display device.

It is sectional drawing of the organic electroluminescence display containing the protective film formed into a film by the film-forming method of this invention. It is sectional drawing of the organic electroluminescent display panel containing the protective film formed into a film by the film-forming method of this invention. It is the schematic which shows the structure of the organic electroluminescent display panel manufacturing apparatus used for the manufacturing method of this invention. It is a figure which shows the cross section of an organic electroluminescent display panel for every process of a manufacturing process. It is the schematic of the film-forming method of this invention. It is the schematic of the film-forming method as a comparative example. 3 is a schematic view showing a film forming method using a remote plasma CVD method in the second step of Example 1. FIG. 3 is a schematic view showing a film forming method using a parallel plate plasma CVD method in the third step of Example 1. FIG. 6 is a schematic view showing a film forming method using a remote plasma CVD method in the second step of Example 2. FIG. It is the schematic of the film-forming method of this invention which forms into a film in a vacuum atmosphere. It is sectional drawing of the organic device containing the protective layer formed into a film by the conventional film-forming method.

Hereinafter, embodiments of the present invention will be described in detail.

An embodiment of the present invention will be described with reference to FIGS. 1 to 10 as follows. The film forming method of the present invention can be applied to a method for manufacturing an organic EL display device including an organic EL display panel and a drive circuit.

<Organic EL display panel>
FIG. 1 shows a cross-sectional view of an organic EL display device 100 manufactured by the method for manufacturing an organic EL display device of the present invention. The organic EL display device 100 includes an organic EL display panel 90. The organic EL display panel 90 includes the protective film 10 formed by the film forming method of the present invention.

The organic EL display panel 90 includes a counter substrate 1 (substrate) and a support substrate (not shown) provided to face the counter substrate 1. An organic EL element 2 (organic element) is provided on the upper surface of the counter substrate 1. Further, a protective film 10 is provided so as to cover the organic EL element 2. On the support substrate, TFTs (not shown) corresponding to the respective pixels are provided as switching elements of the organic EL element 2.

On the counter substrate 1, as the organic EL element 2, a first electrode 3, an organic layer 4, and a second electrode 5 are provided in this order. The second electrode 5 is provided corresponding to each pixel of the organic EL display device 100 and is connected to the TFT. FIG. 1 shows a partial cross-sectional view of the organic EL display panel 90 and shows only the organic layer 4 and the second electrode 5 corresponding to two pixels, but the organic EL display panel 90 as a whole is shown. Are provided with a large number of organic layers 4 and second electrodes 5. FIG. 2 shows a cross-sectional view of one pixel of the organic EL display panel 90.

As the counter substrate 1, for example, a transparent glass substrate is used. Examples of materials used for the first electrode 3 and the second electrode 5 include ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), gallium-doped zinc oxide (GZO), and the like. A transparent conductive material, a metal material such as gold, nickel, platinum, or aluminum, or a laminated film thereof can be used.

The organic EL display device is a display device that performs display by causing the organic layer 4 to emit light by controlling a voltage applied between the second electrode 5 and the first electrode 3 via a TFT by a driving circuit (not shown). .

The first electrode 3 of the organic EL display panel 90 shown in FIG. 1 is provided in common for a plurality of pixels. It may be.

<Organic EL device>
The organic EL element 2 is a light emitting element that can emit light with high luminance by low voltage direct current drive, and a first electrode 3, an organic layer 4, and a second electrode 5 are laminated in this order.

The second electrode 5 is a layer having a function of injecting (supplying) holes into the organic layer 4. The second electrode 5 is connected to the TFT through a contact hole.

Between the first electrode 3 and the second electrode 5, as the organic layer 4, from the second electrode 5 side, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer However, it has the structure formed in this order.

The light emitting layer is a layer having a function of emitting light by recombining holes injected from the second electrode 5 side and electrons injected from the first electrode 3 side. The light emitting layer is formed of a material having high light emission efficiency such as a low molecular fluorescent dye or a metal complex.

In addition, one layer may have a plurality of functions, and for example, a single layer serving as a hole injection layer and a hole transport layer may be formed.

Note that organic layers other than the light-emitting layer are not essential layers, and may be appropriately formed according to required characteristics of the organic EL element.

The above stacking order is such that the second electrode 5 is an anode and the first electrode 3 is a cathode. When the second electrode 5 is a cathode and the first electrode 3 is an anode, the stacking order of the organic layers 4 is reversed.

<Protective film>
As shown in FIGS. 1 and 2, the protective film 10 includes a first protective film 11 in close contact with the organic layer 4 and a second protective film 12 stacked on the first protective film 11. In FIGS. 1 and 2, the colors of the protective films are shown in different colors based on the difference in the film formation process of the first protective film 11 and the second protective film. 12 does not mean that they are made of different materials, and they may be made of the same material. A detailed film forming method of each protective film will be described later.

The protective film 10 is provided to protect the organic layer 4 from moisture, oxygen, and the like that enter the organic EL display panel 90. The protective film 10 is made of, for example, a SiN film.

<Method for manufacturing organic EL display panel>
The manufacturing method of the organic EL display device 100 includes a manufacturing method of the organic EL display panel 90 described below.

FIG. 3 is a schematic diagram showing a configuration of an apparatus used for manufacturing the organic EL display panel 90, and FIG. 4 is a diagram showing a cross section of the organic EL display panel 90 for each manufacturing process.

The manufacturing process of the organic EL display panel 90 is roughly divided into a first process, a second process, and a third process. In the first step, the first electrode 3, the organic layer 4, and the second electrode 5 are formed using the vapor deposition device 80. In the second step (first protective film forming step), the first protective film 11 is formed using the first protective film forming apparatus 81. In the third step (second protective film forming step), the second protective film 12 is formed using the second protective film forming apparatus 82.

More specifically, in the first step, ozone cleaning, pure water immersion cleaning, ultrasonic pure water cleaning and the like are performed in order to remove particles on the surface of the glass substrate as the counter substrate 1. Then, a glass substrate is arrange | positioned to the vapor deposition apparatus 80, and Al (aluminum) is formed as the 1st electrode 3 on a glass substrate, for example.

Next, as shown in FIG. 4A, an organic layer 4 to be a light emitting region is formed on the first electrode 3 by vapor deposition. As the organic layer 4, for example, an organic layer 4 including a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer is formed.

Next, as shown in FIG. 4B, for example, ITO is formed as the second electrode 5 on the organic layer 4 by using a sputtering method (evaporation method). The organic EL element 2 is formed by the above first step.

Thereafter, in the second step, as shown in FIG. 4C, the first protective film 11 is formed so as to cover the organic EL element 2 in order to seal the organic EL element 2. As the first protective film 11, for example, a SiN film or a SiO ₂ film having a thickness of 100 nm to 300 nm is formed. The first protective film 11 is preferably formed so that at least the exposed portion of the organic layer 4 is eliminated, and the second protective film 12 is preferably formed after the exposed portion is eliminated.

Further, in the third step, a second protective film 12 is formed on the first protective film 11 as shown in FIG. As the second protective film 12, for example, a SiN film or a SiO ₂ film of 3 μm to 4 μm is formed. The second protective film forming apparatus 82 that forms the second protective film 12 preferably has a higher film formation rate than the first protective film forming apparatus 81. That is, the volume of the protective film formed by the second protective film forming apparatus 82 per unit time is preferably larger than the volume of the protective film formed by the first protective film forming apparatus 81 per unit time.

<Plasma CVD method>
As shown in FIG. 5, as the first protective film forming apparatus 81, for example, an apparatus using a plasma CVD method can be used. The plasma CVD method is a kind of chemical vapor deposition, and in order to activate a chemical reaction, by applying a high-frequency voltage or the like between a pair of the lower electrode 20 and the upper electrode 30 that are provided facing each other, The source gas (gas) between the lower electrode 20 and the upper electrode 30 is turned into plasma.

As the raw material gas can be used, for example NH ₃ gas, _{N 2} gas, and SiH ₄ gas. When these source gases are used, nitrogen plasma is formed by applying a high-frequency voltage or the like between the lower electrode 20 and the upper electrode 30. In the nitrogen plasma, charged particles 51 such as electrons and ions and nitrogen radicals exist. Nitrogen radicals react with the SiH ₄ gas, thereby forming a SiN film that covers the first electrode 3, the organic layer 4, and the second electrode 5.

As film formation conditions, for example, SiH ₄ gas flow rate 0.05 to 0.2 SLM (Standard Liter per Minute), NH ₃ gas flow rate 0.5 to 1.5 SLM, N ₂ gas flow rate 1.5 to 3.0 SLM, substrate A SiN film is formed at a temperature of 60 ° C., a high-frequency power supply of 1 to 2 kW, and a deposition pressure of 100 to 250 Pa.

The plasma CVD method according to the second step of this embodiment is to form a film by separating (isolating) the plasma region 50 (second region) and the organic layer 4. Here, the plasma region 50 is a region where the density of charged particles 51 such as electrons and ions is high.

The plasma CVD method according to the second step of the present embodiment is a so-called remote plasma CVD method, and the organic layer 4 is irradiated with the charged particles 51 by separating the organic layer 4 and the plasma region 50. The organic layer 4 is prevented from being damaged (plasma damage, ion damage). This prevents the occurrence of problems such as formation of dark spots (non-light emitting regions) in the organic layer 4, a decrease in light emission efficiency, and a reduction in lifetime.

<Comparative example>
FIG. 6 is a schematic diagram showing a film forming process by a normal parallel plate plasma CVD method in which the organic layer 4 and the plasma region 50 are not separated, unlike the remote plasma CVD method according to the second process of the present embodiment. is there.

As shown in FIG. 6, when the organic layer 4 and the plasma region 50 are not separated, the charged particles 51 are irradiated to the organic layer 4 and the organic layer 4 is damaged. Thereby, a dark spot is formed in the organic layer 4, which causes a problem as an organic EL display device.

<Example 1>
The second step and the third step using the protective film 10 forming method (film forming method) of the present invention will be described based on examples.

<Second step>
A method for forming the first protective film 11 by the first protective film forming apparatus 81 in the second step of this embodiment will be described with reference to FIG.

FIG. 7 is a schematic view showing a film forming method using the remote plasma CVD method in the second step of this embodiment. The remote plasma CVD method of this embodiment is a so-called parallel plate remote plasma CVD method.

In the second step of the present embodiment, a conductive plate electrode 60 is provided between the lower electrode 20 and the upper electrode 30 in order to separate the organic layer 4 and the plasma region 50. On the surface of the plate electrode 60 facing the lower electrode 20 and the upper electrode 30, a hole having a size through which radicals such as nitrogen radicals can pass is provided. Furthermore, the plate electrode 60 is preferably grounded.

In FIG. 7, the region between the upper electrode 30 and the plate electrode 60 is a plasma region 50. A region between the plate electrode 60 and the lower electrode 20 is defined as a film formation region 70 (first region). Thus, the organic EL element 2 faces the film formation region 70. Alternatively, the exposed portions of the first electrode 3, the organic layer 4, and the second electrode 5 included in the organic EL element 2 are inside the film formation region 70.

There is a plasma region 50 outside the film formation region 70. In the film forming method of the present embodiment, the film forming region 70 and the plasma region 50 are both regions between the lower electrode 20 and the upper electrode 30 and are adjacent to each other via the plate electrode 60. In other words, the plate electrode 60 divides the region between the lower electrode 20 and the upper electrode 30 into the plasma region 50 and the film formation region 70.

Nitrogen plasma is generated by supplying NH ₃ gas or N ₂ gas to the plasma region and applying a high-frequency voltage or the like between the lower electrode 20 and the upper electrode 30. The charged particles 51 such as electrons and ions in the nitrogen plasma are brought into contact with the grounded plate-like electrode 60 and are caused to flow to the ground.

On the other hand, the nitrogen radical 52 having no charge passes through a hole provided in the plate electrode 60 and reaches the film formation region 70. Here, by supplying SiH ₄ gas to the film formation region 70, the nitrogen radical 52 and SiH ₄ react to form the first protective film 11 on the first electrode 3, the organic layer 4, and the second electrode 5. The SiN film is formed.

As described above, by forming the first protective film 11 by the remote plasma CVD method, irradiation (contact) of the charged particles 51 to the organic layer 4 can be suppressed, and damage to the organic layer 4 can be reduced. .

<Third step>
A method for forming the second protective film 12 by the second protective film forming apparatus 82 in the third step of this embodiment will be described with reference to FIG.

FIG. 8 is a schematic view showing a film forming method using a parallel plate plasma CVD method in the third step of this embodiment. The third step of the present embodiment is a film forming step by a so-called normal parallel plate plasma CVD method in which the organic layer 4 and the plasma region 50 are not separated.

As shown in FIG. 8, the organic layer 4 faces the plasma region 50, and the plasma region 50 becomes a film formation region. Comparing the second step and the third step, the density of charged particles in the film formation region 70 in the second step is smaller than the density of charged particles in the film formation region (plasma region 50) in the third step.

In the stage of carrying out the third step, as described above, the first protective film 11 has already been formed by the second step, so that the charged particles 51 are not irradiated onto the organic layer 4. Therefore, the damage given to the organic layer 4 is small.

By using the parallel plate plasma CVD method in the third step, the film can be formed at a higher film formation rate than in the second step. Thereby, production tact time can be shortened.

<Example 2>
The formation method of the protective film 10 of this invention is demonstrated based on another Example.

<Second step>
A method for forming the first protective film 11 by the first protective film forming apparatus 81 in the second step of this embodiment will be described with reference to FIG.

FIG. 9 is a schematic view showing a film forming method using the remote plasma CVD method in the second step of this embodiment.

In the second step of the present embodiment, the organic layer 4 is provided outside the region between the lower electrode 20b and the upper electrode 30b in order to separate the organic layer 4 and the plasma region 50b.

In FIG. 9, a region between the upper electrode 30b and the lower electrode 20b is a plasma region 50b. Further, a region outside the plasma region 50b and facing the organic layer 4 is defined as a film formation region 70b. Thus, the organic EL element 2 faces the film formation region 70b. Or the exposed part of the 1st electrode 3, the organic layer 4, and the 2nd electrode 5 which the organic EL element 2 has exists in the inside of the film-forming area | region 70b.

Nitrogen plasma is generated by supplying NH ₃ gas and N ₂ gas to the plasma region 50b and applying a high-frequency voltage or the like between the upper electrode 30b and the lower electrode 20b.

For example, by flowing a gas passing through the plasma region 50b toward the organic layer 4, the nitrogen radicals 52 in the nitrogen plasma reach the film formation region 70b. Here, by supplying SiH ₄ gas to the film formation region 70 b, the nitrogen radical 52 and SiH ₄ react to form the first protective film 11 on the first electrode 3, the organic layer 4, and the second electrode 5. The SiN film is formed.

As in the case of the first embodiment, a plate electrode 60 may be provided between the plasma region 50b and the film formation region 70b.

As described above, by forming the first protective film 11 by the remote plasma CVD method, irradiation (contact) of the charged particles 51 to the organic layer 4 can be suppressed, and damage to the organic layer 4 can be reduced. .

In the third step of Example 2, the second protective film 12 can be formed by the same method as the third step of Example 1.

(Other deposition conditions)
In the film forming method of the present invention, an example in which NH ₃ gas, N ₂ gas, and SiH ₄ gas are used as an example raw material gas is shown. Thereby, a SiN film can be formed as the protective film 10. As examples of other source gases, O ₂ gas and SiH ₄ gas can be used. As a result, a SiO ₂ film can be formed as the protective film 10.

Further, as shown in FIG. 10, the film forming process using the film forming method of the present invention is preferably performed in a vacuum atmosphere. This is for preventing deterioration of the organic layer 4 due to film formation in the atmosphere.

Further, the volume of the protective film formed per unit time in the third step is preferably larger than the volume of the protective film formed per unit time in the second step. In the above-described embodiment, the case where the parallel plate plasma CVD method is used as the third step has been described. However, the present invention is not limited to this, and for example, film formation by a sputtering method can also be used.

In the conventional method of manufacturing an organic EL display device, the second electrode is formed on the organic layer in one step of manufacturing the organic EL display panel. At this time, in order to protect the upper surface of the organic layer from irradiation of charged particles, it was necessary to cover the entire upper surface of the organic layer with the second electrode.

However, it is difficult to accurately form the second electrode on the organic layer, and a part of the upper surface of the organic layer is exposed. When a part of the upper surface of the organic layer is exposed, the exposed portion is irradiated with charged particles, and the organic layer is damaged.

In one process of manufacturing a conventional organic EL display panel, a second electrode having an area larger than the area of the upper surface of the organic layer may be formed in order to cover the entire upper surface of the organic layer with the second electrode. is there.

In this case, the peripheral edge of the second electrode protrudes from the upper surface of the organic layer. When such a protruding portion of the second electrode exists, there may be a coverage defect that a protective film is not formed in a region below the protruding portion.

On the other hand, in the method for manufacturing an organic EL display device according to the present invention, film formation is performed by remote plasma CVD in the second step. Does not enter. That is, there is no need to worry about damage to the organic layer due to plasma.

Therefore, it is not necessary to accurately form the second electrode on the entire upper surface of the organic layer. For example, as shown in FIG. 2, the area of the surface of the second electrode 5 that faces the organic layer 4 is reduced. The area of the surface facing the second electrode 5 can be made equal to or less. Thereby, since it becomes difficult for the 2nd electrode 5 to protrude outside an organic layer, generation | occurrence | production of the coverage malfunction of the protective film 10 can also be reduced.

Thus, according to the manufacturing method of the organic EL display device of the present invention, when determining the process conditions for forming the second electrode and the protective film, the width is larger than the manufacturing method of the conventional organic EL display device. You can have it.

[Summary of Embodiment]
In order to solve the above problems, the film forming method of the present invention is a film forming method for forming a protective film covering the organic element by vapor deposition, and the first protection for forming the first protective film covering the organic element. A film forming step and a second protective film forming step of forming a second protective film covering the first protective film, wherein the region facing the organic element is defined as a first region, and the first region In the first protective film forming step, the first region has a density of charged particles lower than that of the second region in the first protective film forming step, and a unit time in the second protective film forming step. The volume of the protective film formed around is larger than the volume of the protective film formed per unit time in the first protective film forming step.

With the above configuration, since the formation of the protective film on the organic layer is performed in a region where the density of charged particles is low in the first protective film forming step, the organic layer is prevented from being irradiated with charged particles. Thereby, the damage given to an organic layer by irradiating a charged particle can be reduced, and a 1st protective film can be formed on an organic layer.

Further, with the above structure, the time required for film formation can be shortened, and film formation can be performed efficiently.

The density of charged particles in the first region in the first protective film forming step is preferably smaller than the density of charged particles in the first region in the second protective film forming step.

With the above configuration, irradiation of the organic layer with charged particles can be suppressed, and damage to the organic layer can be reduced.

The organic element includes an organic layer, and the second protective film forming step may be performed after the exposed portion of the organic layer disappears by forming the first protective film.

With the above configuration, the damage to the organic compound can be reduced even in the second protective film forming step, and the second protective film can be formed.

At least one of the first protective film forming step and the second protective film forming step may be performed in a vacuum atmosphere.

With the above configuration, it is possible to suppress deterioration of the organic layer that occurs when the organic layer reacts with moisture or oxygen in the air.

Of the first protective film forming step and the second protective film forming step, at least the first protective film forming step may be a step using a CVD method.

The radicals in the second region may be supplied to the first region.

With the above configuration, the radical supplied to the first region reacts with the gas in the first region, and a film covering the organic layer can be formed.

In the first protective film forming step, the step of having the first region and the second region between a pair of electrodes provided facing each other and supplying a gas between the electrodes, A step of generating a radical by applying a voltage therebetween.

With the above configuration, a gas and radicals necessary for film formation are supplied, and a film can be formed.

The first region and the second region are formed by being separated by a plate electrode, and the plate electrode may be provided with a hole having a size through which the radical can pass. .

With the above configuration, radicals can be supplied from the first region to the second region through the hole. Further, by separating the first region and the second region by the plate-like electrode, the movement of the charged particles from the second region to the first region can be suppressed, and the charged particles are irradiated to the organic layer. Can be suppressed, damage to the organic layer can be reduced, and the first protective film can be formed on the organic layer.

The plate electrode may be grounded.

With the above configuration, the movement of the charged particles from the second region to the first region can be further suppressed, the charged particles are prevented from being irradiated to the organic layer, the damage given to the organic layer is reduced, and the organic A first protective film can be formed on the layer.

In the first protective film forming step, a region between a pair of electrodes provided facing each other is set as the second region, a gas is supplied between the electrodes, and a voltage is applied between the electrodes. And a step of generating the radical.

With the above configuration, the organic layer can be prevented from being irradiated with charged particles in the second region. Further, the protective film can be formed using radicals generated by applying a voltage between the electrodes.

As the gas, SiH ₄ may be supplied to the first region, and N ₂ and NH ₃ may be supplied to the second region.

With the above configuration, a protective film containing SiN can be formed.

In addition, a method for manufacturing an organic EL display device according to the present invention includes the film forming method described above in order to solve the above-described problems.

With the above configuration, an organic EL display device in which damage to the organic layer is reduced can be manufactured. As a result, it is possible to manufacture an organic EL display device that suppresses the occurrence of problems such as the generation of dark spots, a decrease in luminous efficiency, and a reduction in lifetime.

The organic element includes an organic layer, a first electrode, and a second electrode, the step of providing the first electrode on a substrate, and the step of providing the organic layer on the first electrode Providing the second electrode on the organic layer, and the area of the surface of the second electrode facing the organic layer is the surface of the organic layer facing the second electrode. Or less.

The above configuration can further suppress coverage defects. Further, the process conditions for forming the second electrode can be widened.

The present invention is not limited to the above-described embodiment, and various modifications can be made within the scope indicated in the claims. That is, embodiments obtained by combining technical means appropriately modified within the scope of the claims are also included in the technical scope of the present invention.

The present invention can be used in a method for forming a protective film for an organic layer of an organic EL display device.

1 Counter substrate (substrate)
2 Organic EL elements (organic elements)
3 First electrode 4 Organic layer 5 Second electrode 10 Protective film 11 First protective film 12 Second protective film 50, 50b Plasma region (second region)
51 Charged particle 52 Nitrogen radical (radical)
60 Plate-like electrode 70, 70b Deposition region (first region)
100 Organic EL display device

Claims (13)

A film forming method for forming a protective film covering an organic element by vapor deposition,
A first protective film forming step of forming a first protective film covering the organic element;
A second protective film forming step of forming a second protective film covering the first protective film,
When the region facing the organic element is a first region and the region outside the first region is a second region,
In the first protective film forming step, the first region has a lower density of charged particles than the second region,
The deposition method characterized in that the volume of the protective film formed per unit time in the second protective film forming step is larger than the volume of the protective film formed per unit time in the first protective film forming step. 2. The film formation according to claim 1, wherein the density of charged particles in the first region in the first protective film forming step is smaller than the density of charged particles in the first region in the second protective film forming step. Method. The organic element includes an organic layer,
3. The film forming method according to claim 1, wherein the second protective film forming step is performed after the exposed portion of the organic layer disappears by forming the first protective film. 4. The film forming method according to claim 1, wherein at least one of the first protective film forming step and the second protective film forming step is performed in a vacuum atmosphere. 5. The method according to claim 1, wherein, of the first protective film forming step and the second protective film forming step, at least the first protective film forming step is a step using a CVD method. The film forming method according to item. 6. The film forming method according to claim 1, wherein radicals in the second region are supplied to the first region. In the first protective film forming step,
Between the pair of electrodes provided opposite to each other, the first region and the second region,
Supplying a gas between the electrodes;
The film forming method according to claim 6, further comprising: applying a voltage between the electrodes to generate the radical. The first region and the second region are formed by being separated by a plate electrode,
8. The film forming method according to claim 7, wherein the plate electrode is provided with a hole having a size through which the radical can pass. 9. The film forming method according to claim 8, wherein the plate electrode is grounded. In the first protective film forming step,
A region between a pair of electrodes provided facing each other is the second region,
Supplying a gas between the electrodes;
The film forming method according to claim 6, further comprising: applying a voltage between the electrodes to generate the radical. 11. The film forming method according to claim 7, wherein SiH ₄ is supplied to the first region and N ₂ and NH ₃ are supplied to the second region as the gas. An organic EL display device manufacturing method comprising the film forming method according to any one of claims 1 to 11. The organic element includes an organic layer, a first electrode, and a second electrode,
Providing the first electrode on a substrate;
Providing the organic layer on the first electrode;
Providing the second electrode on the organic layer, and
13. The organic EL display device according to claim 12, wherein the area of the surface of the second electrode facing the organic layer is equal to or less than the area of the surface of the organic layer facing the second electrode. Manufacturing method.

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