WO2013141159A1 - Substrate processing device, method for manufacturing semiconductor device, and method for processing substrate - Google Patents

Abstract

The present invention addresses the problem of having the capability to clean away matter by forming a flow of cleaning gas while minimizing the incidence of overetching inside a reaction vessel when cleaning is to be performed. The present invention is provided with: a reaction vessel for processing a substrate; a substrate mounting platform rotatably provided inside the reaction vessel; a cleaning-gas-supplying unit for supplying cleaning gas inside the reaction vessel; a plurality of vent units for venting the space below the substrate mounting platform in the reaction vessel; and a control unit for controlling at least the substrate mounting platform, the cleaning gas supply unit, and the vent units. The control unit forms the flow of cleaning gas by adjusting the volume of cleaning gas vented from each of the vent units when cleaning gas is supplied into the reaction vessel.

Description

Substrate processing apparatus, semiconductor device manufacturing method, and substrate processing method

The present invention relates to a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate processing method.

For example, a substrate processing step of forming a thin film on a substrate may be performed as one step of a manufacturing process of a semiconductor device such as a flash memory or DRAM (Dynamic Random Access Memory). As a substrate processing apparatus that performs such a substrate processing step, a thin film deposition apparatus including a reaction vessel that simultaneously forms a thin film on a plurality of substrates mounted on a substrate mounting table is known (see, for example, Patent Document 1). ).

Special table 2008-524842

However, when the above-described substrate processing apparatus performs the substrate processing, particles such as by-products may be generated in the reaction vessel, and may adhere to and accumulate on the substrate mounting table or the inner wall of the reaction vessel. For example, when the next batch of substrate processing is performed in a state where particles or the like are attached to the inner wall or the like of the reaction vessel, the particles may adhere to the substrate and the quality of the substrate may deteriorate. Therefore, after the substrate processing is performed a predetermined number of times, cleaning gas is supplied into the reaction vessel by the cleaning gas supply unit, particles deposited and deposited in the reaction vessel, by-products generated in the reaction vessel, etc. Cleaning for removing the object to be cleaned is performed. In the cleaning, it is required to reliably remove particles so as not to affect the next substrate processing.

In order to solve the above-described problems, an object of the present invention is to provide a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate processing method capable of removing a cleaning object more reliably and performing high-quality substrate processing. To do.

According to one aspect of the invention,
A reaction vessel for processing the substrate;
A substrate mounting table provided in the reaction vessel, in which a plurality of substrate mounting units are formed and configured to be rotatable;
A cleaning gas supply unit for supplying a cleaning gas into the reaction vessel;
A plurality of exhaust parts for exhausting a space below the substrate mounting table in the reaction container;
A control unit for controlling at least the substrate mounting table, the cleaning gas supply unit, and the exhaust unit;
The controller is
When supplying the cleaning gas into the reaction vessel, there is provided a substrate processing apparatus that forms a flow of the cleaning gas by adjusting the exhaust gas flow rates of the plurality of the exhaust portions.

According to another aspect of the invention,
In the reaction vessel for processing the substrate, a cleaning gas is supplied by a cleaning gas supply unit, and the inside of the reaction vessel is cleaned.
In the cleaning step,
The exhaust gas flow rates of the cleaning gas in the plurality of exhaust units for exhausting the space in the reaction container below the substrate mounting table that is configured to be rotatable by forming a plurality of substrate mounting parts provided in the reaction container. By adjusting each, a method of manufacturing a semiconductor device that forms a flow of a cleaning gas is provided.

According to yet another aspect of the invention,
In the reaction vessel for processing the substrate, a cleaning gas is supplied by a cleaning gas supply unit, and the inside of the reaction vessel is cleaned.
In the cleaning step,
The exhaust gas flow rates of the cleaning gas in the plurality of exhaust units for exhausting the space in the reaction container below the substrate mounting table that is configured to be rotatable by forming a plurality of substrate mounting parts provided in the reaction container. Each adjustment provides a substrate processing method for forming a flow of cleaning gas.

According to the substrate processing apparatus, the semiconductor device manufacturing method, and the substrate processing method according to the present invention, it is possible to more reliably remove the object to be cleaned and perform high-quality substrate processing.

1 is a schematic cross-sectional view of a cluster type substrate processing apparatus according to an embodiment of the present invention. It is a longitudinal section schematic diagram of a cluster type substrate processing apparatus concerning one embodiment of the present invention. It is a schematic perspective view of the reaction container which concerns on one Embodiment of this invention. It is a longitudinal section schematic diagram of a processing furnace concerning one embodiment of the present invention. It is a schematic explanatory drawing of the gas supply part which concerns on one Embodiment of this invention. It is a flowchart which shows the substrate processing process which concerns on one Embodiment of this invention. It is a flowchart which shows the film-forming process which concerns on one Embodiment of this invention. It is a flowchart which shows the cleaning process which concerns on one Embodiment of this invention. FIG. 2 is a schematic top view schematically showing the flow of the cleaning gas flowing in the reaction container according to the embodiment of the present invention, wherein (a) shows the case where the cleaning gas is supplied from the center of the reaction container, (b) Indicates a case where the cleaning gas is supplied from an area where the number of objects to be cleaned in the reaction container is small. It is a schematic diagram which shows the flow of the cleaning gas which flows through the inside of the reaction container which concerns on other embodiment of this invention. It is the longitudinal cross-sectional schematic of the processing furnace with which the conventional substrate processing apparatus is provided. It is a schematic diagram which shows the flow of the cleaning gas which flows in the reaction container with which the conventional substrate processing apparatus is provided, (a) shows the case where cleaning gas is supplied from the area | region with few cleaning objects in a reaction container, (b ) Shows the case where the cleaning gas is supplied from the center of the reaction vessel.

<One Embodiment of the Present Invention>
An embodiment of the present invention will be described below with reference to the drawings.

(1) Configuration of Substrate Processing Apparatus First, the configuration of the substrate processing apparatus according to the present embodiment will be described mainly with reference to FIGS. FIG. 1 is a schematic cross-sectional view of a cluster type substrate processing apparatus according to the present embodiment. FIG. 2 is a schematic longitudinal sectional view of the cluster type substrate processing apparatus according to the present embodiment. In the substrate processing apparatus to which the present invention is applied, a FOUP (Front Opening Unified Pod, hereinafter referred to as a pod) is used as a carrier for transporting a wafer 200 as a substrate. The transfer device of the cluster type substrate processing apparatus according to the present embodiment is divided into a vacuum side and an atmosphere side. In this specification, “vacuum” means an industrial vacuum. In the following description, front, rear, left and right are based on FIG. That is, with respect to the paper surface shown in FIG. 1, the front is below the paper surface, the back is above the paper surface, and the left and right are the left and right of the paper surface.

(Vacuum side configuration)
The cluster type substrate processing apparatus 100 includes a vacuum transfer chamber 103 as a first transfer chamber that can be decompressed to a pressure lower than atmospheric pressure (for example, 100 Pa) such as a vacuum state. The housing 101 of the vacuum transfer chamber 103 is formed in, for example, a box shape with a hexagonal shape in a plan view and closed at both upper and lower ends.

Among the six side walls constituting the casing 101 of the vacuum transfer chamber 103, the load lock chambers 122 and 123 are connected to the vacuum transfer chamber 103 and the two side walls located on the front side via gate valves 126 and 127, respectively. Each is provided so that it can communicate.

Among the other four side walls of the vacuum transfer chamber 103, two chambers are provided with process chambers 202a and 202b through the gate valves 244a and 244b, respectively, so as to be able to communicate with the vacuum transfer chamber 103. The process chambers 202a and 202b are provided with a gas supply unit and an exhaust unit, which will be described later. As will be described later, the process chambers 202a and 202b have a plurality of processing regions formed in one reaction vessel 203, and a plurality of wafers 200 serving as substrates are rotated by rotating a susceptor 217 as a substrate support. By sequentially passing through the processing region or the like, the raw material gas or the like is sequentially supplied to the wafer 200, a process of forming a thin film on the wafer 200, a process of oxidizing, nitriding, carbonizing, etc. the surface of the wafer 200, Various substrate processes such as a process of etching the surface of the wafer 200 are performed.

Cooling chambers 202c and 202d are provided on the remaining two side walls of the vacuum transfer chamber 103 through the gate valves 244c and 244d so as to be able to communicate with the vacuum transfer chamber 103, respectively.

In the vacuum transfer chamber 103, a vacuum transfer robot 112 as a first transfer mechanism is provided. The vacuum transfer robot 112 can transfer, for example, two wafers 200 (shown by dotted lines in FIG. 1) between the load lock chambers 122 and 123, the process chambers 202a and 202b, and the cooling chambers 202c and 202d. It is configured. The vacuum transfer robot 112 is configured to be moved up and down by an elevator 115 while maintaining the airtightness of the vacuum transfer chamber 103. The presence or absence of the wafer 200 is detected in the vicinity of the gate valves 126 and 127 of the load lock chambers 122 and 123, the gate valves 244a and 244b of the process chambers 202a and 202b, and the gate valves 244c and 244d of the cooling chambers 202c and 202d. A wafer presence sensor (not shown) is provided as the substrate detection unit.

The load lock chambers 122 and 123 are configured to have a load lock chamber structure that can be depressurized to a pressure (decompression) that is less than atmospheric pressure such as a vacuum state. That is, an atmospheric transfer chamber 121 as a second transfer chamber, which will be described later, is provided on the front side of the load lock chambers 122 and 123 via the gate valves 128 and 129. Therefore, after the gate valves 126 to 129 are closed and the inside of the load lock chambers 122 and 123 is evacuated, the gate valves 126 and 127 are opened, thereby maintaining the vacuum state of the vacuum transfer chamber 103 and the load lock chamber 122. , 123 and the vacuum transfer chamber 103 can be transferred.

Further, the load lock chambers 122 and 123 function as spare chambers for temporarily storing the wafers 200 to be loaded into the vacuum transfer chamber 103. At this time, the wafer 200 is placed on the substrate platform 140 in the load lock chamber 122 and on the substrate platform 141 in the load lock chamber 123. The load lock chambers 122 and 123 may be provided with partition plates (intermediate plates) 142 (see FIG. 2). Thereby, it is possible to prevent the cooling of the wafer 200 being cooled from being hindered by thermal interference. Specifically, for example, when a plurality of processed wafers 200 are loaded into the load lock chambers 122 and 123, the cooling of the previously loaded wafers 200 due to the heat of the processed wafers 200 loaded later. It is possible to prevent the temperature drop of the processed wafer 200 from slowing down.

(Composition on the atmosphere side)
On the atmosphere side of the substrate processing apparatus 100, an atmosphere transfer chamber 121 is provided as a second transfer chamber that is used at substantially atmospheric pressure. That is, the atmospheric transfer chamber 121 is provided on the front side of the load lock chambers 122 and 123 via the gate valves 128 and 129. The atmospheric transfer chamber 121 is provided so as to communicate with the load lock chambers 122 and 123.

In the atmospheric transfer chamber 121, an atmospheric transfer robot 124 as a second transfer mechanism for transferring the wafer 200 is provided. The atmospheric transfer robot 124 is configured to be moved up and down by an elevator 131 (see FIG. 2) provided in the atmospheric transfer chamber 121, and is moved in the left-right direction (left-right direction in FIG. 1) by a linear actuator 132 (see FIG. 2). And in the front-rear direction in FIG. 2). Further, a wafer presence sensor is provided as a substrate detection unit for detecting the presence or absence of the wafer 200 in the vicinity of the gate valves 128 and 129 of the atmospheric transfer chamber 121.

Also, in the atmospheric transfer chamber 121, a notch aligning device 106 is provided as a correcting device for correcting the position of the wafer 200, using the notch of the wafer 200 for crystal orientation and alignment of the wafer 200. Instead of the notch aligning device 106, an orientation flat aligning device may be provided. A clean unit 118 (see FIG. 2) for supplying clean air is provided in the upper part of the atmospheric transfer chamber 121.

On the front side of the casing 125 of the atmospheric transfer chamber 121, a substrate transfer port 134 for transferring the wafer 200 into and out of the atmospheric transfer chamber 121 and a pod opener 108 are provided. A load port (I / O stage) 105 as a pod mounting table (pod mounting unit) is provided on the opposite side of the pod opener 108 with respect to the substrate transfer port 134, that is, on the outside of the housing 125. On the load port 105, a pod 109 for storing a plurality of wafers 200 is placed. In the atmospheric transfer chamber 121, a lid 135 that opens and closes the substrate transfer port 134, an opening and closing mechanism 143 that opens and closes the cap 109 a of the pod 109, and an opening and closing mechanism driving unit 136 that drives the opening and closing mechanism 143 are provided. (See FIG. 2). The pod opener 108 opens and closes the cap 109 a of the pod 109 placed on the load port 105, thereby enabling the wafer 200 to be taken in and out of the pod 109. The pod 109 is carried in (supplied) and carried out (discharged) with respect to the load port 105 by a not-shown transfer device (RGV).

Mainly, the vacuum transfer chamber 103, the load lock chambers 122 and 123, the atmospheric transfer chamber 121, and the gate valves 126 to 129 constitute the transfer apparatus of the substrate processing apparatus 100 according to this embodiment.

A control unit 221 to be described later is electrically connected to each component of the transfer device of the substrate processing apparatus 100. And it is comprised so that operation | movement of each structure mentioned above may be controlled, respectively.

(Wafer transfer operation)
Next, the transfer operation of the wafer 200 in the substrate processing apparatus 100 according to the present embodiment will be described. The operation of each component of the transfer apparatus of the substrate processing apparatus 100 is controlled by the control unit 221 described later.

First, for example, a pod 109 storing 25 unprocessed wafers 200 is carried into the substrate processing apparatus 100 by a transfer device. The pod 109 that has been carried in is placed on the load port 105. The opening / closing mechanism 143 removes the lid 135 and the cap 109a of the pod 109, and opens the substrate transfer port 134 and the wafer entrance / exit of the pod 109.

When the wafer entrance / exit of the pod 109 is opened, the atmospheric transfer robot 124 installed in the atmospheric transfer chamber 121 picks up one wafer 200 from the pod 109 and places it on the notch aligner 106.

The notch aligning device 106 moves the mounted wafer 200 in the horizontal vertical and horizontal directions (X direction, Y direction) and the circumferential direction, and adjusts the notch position and the like of the wafer 200. While the position adjustment of the first wafer 200 is being performed by the notch alignment device 106, the atmospheric transfer robot 124 picks up the second wafer 200 from the pod 109 and loads it into the atmospheric transfer chamber 121. Wait in 121.

After the position adjustment of the first wafer 200 is completed by the notch aligner 106, the atmospheric transfer robot 124 picks up the first wafer 200 on the notch aligner 106. The atmospheric transfer robot 124 places the second wafer 200 held by the atmospheric transfer robot 124 on the notch alignment device 106 at that time. Thereafter, the notch alignment device 106 adjusts the notch position and the like of the second wafer 200 placed thereon.

Next, the gate valve 128 is opened, and the atmospheric transfer robot 124 loads the first wafer 200 into the load lock chamber 122 and places it on the substrate platform 140. During this transfer operation, the gate valve 126 on the vacuum transfer chamber 103 side is closed, and the reduced pressure atmosphere in the vacuum transfer chamber 103 is maintained. When the transfer of the first wafer 200 onto the substrate platform 140 is completed, the gate valve 128 is closed and the load lock chamber 122 is evacuated to a negative pressure by the exhaust device.

Thereafter, the atmospheric transfer robot 124 repeats the above-described operation. However, when the load lock chamber 122 is in a negative pressure state, the atmospheric transfer robot 124 does not carry the wafer 200 into the load lock chamber 122 but stops at a position immediately before the load lock chamber 122 and stands by.

When the pressure in the load lock chamber 122 is reduced to a preset pressure value (for example, 100 Pa), the gate valve 126 is opened, and the load lock chamber 122 and the vacuum transfer chamber 103 are communicated with each other. Subsequently, the vacuum transfer robot 112 disposed in the vacuum transfer chamber 103 picks up the first wafer 200 from the substrate platform 140 and loads it into the vacuum transfer chamber 103.

After the vacuum transfer robot 112 picks up the first wafer 200 from the substrate platform 140, the gate valve 126 is closed, the load lock chamber 122 is returned to atmospheric pressure, and the next load lock chamber 122 is placed in the load lock chamber 122. Preparations for loading the wafer 200 are performed. In parallel with this, the gate valve 244a of the process chamber 202a at a predetermined pressure (for example, 100 Pa) is opened, and the vacuum transfer robot 112 carries the first wafer 200 into the process chamber 202a. This operation is repeated until an arbitrary number (for example, five) of wafers 200 is loaded into the process chamber 202a. When the loading of an arbitrary number (for example, five) of wafers 200 into the process chamber 202a is completed, the gate valve 244a is closed. Thereafter, a raw material gas or the like is supplied into the process chamber 202a from a gas supply unit described later, and the wafer 200 is subjected to predetermined processing.

When predetermined processing is completed in the process chamber 202a, the gate valve 244a is opened, and the wafer 200 is unloaded from the process chamber 202a to the vacuum transfer chamber 103 by the vacuum transfer robot 112. After unloading, the gate valve 244a is closed.

Subsequently, the gate valve 127 is opened, and the wafer 200 unloaded from the process chamber 202 a is loaded into the load lock chamber 123 and mounted on the substrate platform 141. The load lock chamber 123 is decompressed to a preset pressure value by the exhaust device. Then, the gate valve 127 is closed, and cooling of the processed wafer 200 in the load lock chamber 123 is started. Further, an inert gas is introduced from an inert gas supply unit connected to the load lock chamber 123, and the pressure in the load lock chamber 123 is returned to atmospheric pressure.

When the preset cooling time has elapsed in the load lock chamber 123 and the pressure in the load lock chamber 123 is returned to atmospheric pressure, the gate valve 129 is opened. Subsequently, after the atmospheric transfer robot 124 picks up the processed wafer 200 from the substrate platform 141 and unloads it into the atmospheric transfer chamber 121, the gate valve 129 is closed. Thereafter, the atmospheric transfer robot 124 stores the processed wafer 200 in the empty pod 109 through the substrate transfer port 134 of the atmospheric transfer chamber 121. Here, the cap 109a of the pod 109 may be kept open until a maximum of 25 wafers 200 are returned, or may be returned to the original pod 109 from which the wafer was unloaded without being stored in the empty pod 109. Good.

When the predetermined process is performed on all the wafers 200 in the pod 109 by the above-described process and all the 25 processed wafers 200 are stored in the predetermined pod 109, the cap 109a of the pod 109 and the substrate transfer are performed. The lid 135 of the mouth 134 is closed by the opening / closing mechanism 143. Thereafter, the pod 109 is transferred from the load port 105 to the next step by the transfer device. By repeating the above operation, 25 wafers 200 are sequentially processed.

(2) Configuration of Process Chamber Next, the configuration of the process chamber 202a as a processing furnace according to the present embodiment will be described mainly with reference to FIGS. FIG. 3 is a schematic perspective view of the reaction vessel according to the present embodiment. FIG. 4 is a schematic longitudinal sectional view of the processing furnace according to the present embodiment. FIG. 5 is a schematic explanatory diagram of a gas supply unit according to the present embodiment. The process chamber 202b is configured in the same manner as the process chamber 202a, and thus the description thereof is omitted.

(Reaction vessel)
As shown in FIGS. 3 and 4, a process chamber 202a as a processing furnace includes a reaction vessel 203 that is a cylindrical airtight vessel. A processing space for the wafer 200 is formed in the reaction vessel 203. A partition plate 205 extending radially from the center is provided above the processing space in the reaction vessel 203, that is, on the ceiling side. The partition plate 205 is configured to partition the processing space in the reaction vessel 203 into a plurality of processing regions. Specifically, in the present embodiment, the reaction vessel 203 is configured to be partitioned into a first processing region 201a, a first purge region 204a, a second processing region 201b, and a second purge region 204b. Yes. That is, the first processing region 201a and the second processing region 201b are disposed at positions facing each other when viewed from the center of the reaction vessel 203. The first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b are arranged in this order along the rotation direction of a susceptor 217 described later. Has been.

As will be described later, by rotating the susceptor 217, the wafer 200 placed on the susceptor 217 has a first processing region 201a, a first purge region 204a, a second processing region 201b, and a second purge. It moves in the order of the area 204b. Further, as will be described later, a source gas is supplied as a first processing gas into the first processing region 201a, a reaction gas is supplied as a second processing gas into the second processing region 201b, An inert gas is supplied into the first purge region 204a and the second purge region 204b. Therefore, by rotating the susceptor 217, the source gas, the inert gas, the reactive gas, and the inert gas are alternately supplied onto the wafer 200 in this order. The source gas is a gas that can form a film by itself, and the reaction gas is a gas that cannot form a film by itself. The configurations of the susceptor 217 and the gas supply unit will be described later.

A gap having a predetermined width is provided between the end of the partition plate 205 and the side wall of the reaction vessel 203, and the gas can pass through the gap. By injecting an inert gas into the first processing region 201a and the second processing region 201b from the first purge region 204a and the second purge region 204b and the above-described gap, The material gas can be prevented from intruding into the first purge region 204a and the second purge region 204b, and the reaction of the material gas (the generation of foreign matter thereby) can be prevented. Yes.

An opening 209 that penetrates the intersection of the partition plates 205 in the vertical direction is provided at the intersection (center) of each partition plate 205. The opening 209 is formed in a shape capable of passing the downstream side of a second cleaning gas supply pipe 232j described later. In the opening 209, a downstream side of a second cleaning gas supply pipe 232j described later is disposed.

In the present embodiment, the angle between the partition plates 205 is 90 degrees, but the present invention is not limited to this. That is, in consideration of the supply time of various gases to the wafer 200, the angle may be changed as appropriate, for example, by increasing the angle between the two partition plates 205 forming the second processing region 201b. .

(Plasma generator)
Above the second processing region 201b, a plasma generation unit 206 is provided for bringing the supplied reaction gas into a plasma state. By using plasma, the wafer 200 can be processed at a low temperature. The plasma generation unit 206 includes, for example, comb electrodes in which anode electrodes and cathode electrodes are alternately arranged in a comb shape. When high-frequency power output from the high-frequency power source 219 is supplied to the plasma generation unit 206, plasma is generated around the plasma generation unit 206. Note that the plasma generation unit 206 is not limited to being provided above the second processing region 201b, and may be a remote plasma mechanism provided in the middle of a gas supply unit, which will be described later, for example.

(Susceptor)
A susceptor 217 as a substrate mounting table is provided below the partition plate 205, that is, at the bottom center in the reaction vessel 203. Yes.

The susceptor 217 is configured to support a plurality of (for example, five in this embodiment) wafers 200 side by side on the same surface and on the same circumference in the reaction vessel 203. Here, “on the same surface” is not limited to the completely same surface, and it is only necessary that the plurality of wafers 200 are arranged so as not to overlap each other when the susceptor 217 is viewed from above.

As shown in FIG. 4, a circular recess 216 as a substrate mounting portion may be provided at the mounting position of the wafer 200 on the surface of the susceptor 217. The recess 216 is preferably configured such that its diameter is slightly larger than the diameter of the wafer 200. By placing the wafer 200 in the recess 216, the wafer 200 can be easily positioned, and displacement of the wafer 200 caused by the centrifugal force accompanying the rotation of the susceptor 217 can be prevented.

The susceptor 217 is provided with a lifting mechanism 268 that lifts and lowers the susceptor 217. The susceptor 217 is provided with a plurality of through holes (not shown). At the position corresponding to the through hole provided in the susceptor 217 on the bottom surface of the reaction container 203, the wafer 200 is pushed up and supported on the back surface of the wafer 200 when the wafer 200 is loaded into or unloaded from the reaction container 203. A plurality of non-wafer pushing pins are provided. When the wafer push-up pin is raised or when the susceptor 217 is lowered by the elevating mechanism 268, the wafer push-up pin and the wafer push-up pin are pushed through the through-hole in a non-contact state with the susceptor 217. Are arranged with respect to each other. *

The elevating mechanism 268 is provided with a rotating mechanism 267 that rotates the susceptor 217. A rotation shaft (not shown) of the rotation mechanism 267 is connected to the susceptor 217, and the susceptor 217 can be rotated by operating the rotation mechanism 267. A control unit 221 to be described later is connected to the rotation mechanism 267 via a coupling unit 266. The coupling portion 266 is configured as a slip ring mechanism that electrically connects the rotating side and the fixed side with a metal brush or the like. Thereby, it is comprised so that rotation of the susceptor 217 may not be prevented. The control unit 221 is configured to control the state of energization to the rotation mechanism 267 so that the susceptor 217 is rotated at a predetermined speed for a predetermined time. As described above, by rotating the susceptor 217, the wafer 200 placed on the susceptor 217 has the first processing region 201 a, the first purge region 204 a, the second processing region 201 b, and the second purge. The region 204b is moved in this order.

(Heating part)
A heater 218 as a heating unit is integrally embedded in the susceptor 217 so that the wafer 200 can be heated. When power is supplied to the heater 218, the surface of the wafer 200 is heated to a predetermined temperature (eg, room temperature to about 1000 ° C.). A plurality (for example, five) of heaters 218 may be provided on the same surface so as to individually heat the respective wafers 200 placed on the susceptor 217.

The susceptor 217 is provided with a temperature sensor 274. A temperature regulator 223, a power regulator 224, and a heater power source 225 are electrically connected to the heater 218 and the temperature sensor 274 via a power supply line 222. Based on the temperature information detected by the temperature sensor 274, the power supply to the heater 218 is controlled.

(Gas supply part)
Above the reaction vessel 203, a gas supply unit 250 including a source gas supply unit 251, a reaction gas supply unit 252, a first inert gas supply unit 255, and a second inert gas supply unit 256. Is provided. The source gas supply unit 251 and the reaction gas supply unit 252 are airtightly connected to openings 251 a and 252 a opened on the upper side of the reaction vessel 203, respectively. Although not shown, the first inert gas supply unit 255 and the second inert gas supply unit 256 are similarly connected to the upper side of the reaction vessel 203 in an airtight manner. Then, the source gas is supplied from the source gas supply unit 251 into the first processing region 201a, the reaction gas is supplied from the reaction gas supply unit 252 into the second processing region 201b, and the first inert gas supply unit An inert gas is supplied from 255 into the first purge region 204a, and an inert gas is supplied from the second inert gas supply unit 256 into the second purge region 204b.

[Process gas supply unit]
As shown in FIGS. 4 and 5A, the source gas supply unit 251 includes a source gas supply pipe 232a. In addition, an opening (hereinafter also referred to as a source gas supply port) 251a is opened on the upper side of the reaction vessel 203, and the downstream end of the source gas supply pipe 232a is airtightly connected to the source gas supply port 251a. . A source gas supply source 233a, a mass flow controller (MFC) 234a that is a flow rate controller (flow rate control unit), and a valve 235a that is an on-off valve are provided on the upstream side of the source gas supply pipe 232a in order from the upstream direction. Yes.

From the source gas supply pipe 232a, for example, a silicon-containing gas is supplied as the source gas into the first processing region 201a via the mass flow controller 234a, the valve 235a, and the source gas supply port 251a. As the silicon-containing gas, for example, trisilylamine ((SiH3) 3N, abbreviation: TSA) gas, hexamethyldisilazane (C6H19NSi2, abbreviation: HMDS), or the like can be used. Since TSA does not contain an organic component in the molecule, it is considered that an oxide film excellent in electrical insulation can be formed. In addition, when a gas containing an organic component is used as the silicon-containing gas, it is known that a film or the like as a cleaning target adheres to the inner wall or the like of the reaction vessel 203. The source gas may be any of solid, liquid, and gas at normal temperature and pressure, but will be described as a gas here. When the source gas is liquid at normal temperature and pressure, a vaporizer may be provided between the source gas supply source 233a and the mass flow controller 234a.

4 and 5B, the reactive gas supply unit 252 includes a gas supply pipe 232b (also referred to as a reactive gas supply pipe). An opening (hereinafter also referred to as a reaction gas supply port) 252a is opened on the upper side of the reaction vessel 203, and the downstream end of the gas supply pipe 232b is airtightly connected to the reaction gas supply port 252a. On the upstream side of the gas supply pipe 232b, a reactive gas supply source 233b, a mass flow controller (MFC) 234b that is a flow rate controller (flow rate control unit), and a valve 235b that is an on-off valve are provided in order from the upstream direction. .

From the gas supply pipe 232b, for example, oxygen (O2) gas, which is an oxygen (O) -containing gas, is supplied as a reaction gas via the mass flow controller 234b, the valve 235b, and the reaction gas supply port 252a to the second processing region 201b. Supplied in. The oxygen gas is brought into a plasma state by the above-described plasma generation unit 206 and supplied to the wafer 200. Note that the oxygen gas may be activated by heat by adjusting the temperature of the heater 218 and the pressure in the reaction vessel 203 to a predetermined range. As the oxygen-containing gas, ozone (O3) gas or water vapor (H2O) may be used.

A source gas supply unit (also referred to as a silicon-containing gas supply unit) 251 is mainly configured by the source gas supply pipe 232a, the mass flow controller 234a, and the valve 235a. The source gas supply source 233a and the source gas supply port 251a may be included in the source gas supply unit 251. In addition, a reaction gas supply unit (also referred to as an oxygen-containing gas supply unit) 252 is mainly configured by the gas supply pipe 232b, the mass flow controller 234b, and the valve 235b. The reactive gas supply source 233b and the reactive gas supply port 252a may be included in the reactive gas supply unit 252. The processing gas supply unit according to this embodiment is mainly configured by the source gas supply unit 251 and the reactive gas supply unit 252.

[Cleaning gas supply unit]
A downstream end of the first cleaning gas supply pipe 232c included in the first cleaning gas supply unit 253 is connected to the downstream side of the valve 235b of the gas supply pipe 232b. On the upstream side of the first cleaning gas supply pipe 232c, in order from the upstream direction, there are a first cleaning gas supply source 233c, a mass flow controller (MFC) 234c that is a flow rate controller (flow rate control unit), and an on-off valve. A valve 235c is provided.

From the first cleaning gas supply pipe 232c, as a cleaning gas, for example, nitrogen trifluoride (NF3) gas, which is a fluorine-containing gas, passes through the mass flow controller 234c, the valve 235c, the gas supply pipe 232b, and the opening 252a. It is supplied into the second processing area 201b.

The NF 3 gas supplied from the first cleaning gas supply pipe 232 c into the second processing region 201 b is brought into a plasma state by the plasma generation unit 206 described above. The NF3 gas may be activated by heat by adjusting the temperature of the heater 218 and the pressure in the reaction vessel 203 to a predetermined range. Note that fluorine (F2) gas, chlorine trifluoride (ClF3) gas, or the like may be used as the fluorine-containing gas.

As shown in FIG. 4 and FIG. 5C, the second cleaning gas supply unit 254 is airtightly provided in an opening that is opened substantially at the upper center of the reaction vessel 203. The second cleaning gas supply unit 254 includes a second cleaning gas supply pipe 232d. On the upstream side of the second cleaning gas supply pipe 232d, in order from the upstream direction, a cleaning gas supply source 233d, a mass flow controller (MFC) 234d as a flow rate controller (flow rate controller), and a valve 235d as an on-off valve, A remote plasma mechanism 236 is provided. The downstream side of the second cleaning gas supply pipe 232d is disposed in an opening 209 provided at the intersection of the partition plate 205 described above.

From the second cleaning gas supply pipe 232d, as a cleaning gas, for example, nitrogen trifluoride (NF3) gas, which is a fluorine-containing gas, passes through the mass flow controller 234d, the valve 235d, and the lower end of the opening 209, and the reaction container. 203 is supplied. That is, the cleaning gas is supplied from the central portion of the reaction vessel 203 into the processing regions 201a and 201b and the purge regions 204a and 204b.

The NF 3 gas supplied into the reaction vessel 203 from the second cleaning gas supply unit 254 is brought into a plasma state by, for example, a remote plasma mechanism 236 provided between the valve 235d and the outer wall of the reaction vessel 203, and the reaction vessel 203 is supplied. In addition, for example, the NF 3 gas supplied from the second cleaning gas supply unit 254 may be in a plasma state by the above-described plasma generation unit 206, and, for example, the temperature of the heater 218 and the pressure in the reaction vessel 203 are changed. It may be adjusted to a predetermined range and activated by heat. Note that fluorine (F2) gas, chlorine trifluoride (ClF3) gas, or the like may be used as the fluorine-containing gas.

In the present embodiment, the cleaning gas may be supplied into the reaction vessel 203 from at least one of the first cleaning gas supply unit 253 and the second cleaning gas supply unit 254.

The first cleaning gas supply unit 253 is mainly configured by the first cleaning gas supply pipe 232c, the mass flow controller 234c, and the valve 235c. The first cleaning gas supply source 233c, the gas supply pipe 232b, and the reactive gas supply port 252a may be included in the first cleaning gas supply unit 253. In addition, the second cleaning gas supply unit 254 is mainly configured by the second cleaning gas supply pipe 232d, the mass flow controller 234d, and the valve 235d. Note that the second cleaning gas supply source 233d may be included in the second cleaning gas supply unit 254. The cleaning gas supply unit according to this embodiment is mainly configured by the first cleaning gas supply unit 253 and the second cleaning gas supply unit 254.

[Inert gas supply unit]
As shown in FIG. 5D, the first inert gas supply unit 255 includes a first inert gas supply pipe 232e. On the upstream side of the first inert gas supply pipe 232e, in order from the upstream direction, an inert gas supply source 233e, a mass flow controller (MFC) 234e that is a flow rate controller (flow rate control unit), and a valve that is an on-off valve 235e is provided.

The second inert gas supply unit 256 includes a second inert gas supply pipe 232f. On the upstream side of the second inert gas supply pipe 232f, in order from the upstream direction, an inert gas supply source 233f, a mass flow controller (MFC) 234f that is a flow rate controller (flow rate control unit), and a valve that is an on-off valve 235f is provided.

From the first inert gas supply pipe 232e, for example, nitrogen (N2) gas is supplied as an inert gas through the mass flow controller 234e, the valve 235e, and the first inert gas supply port (not shown). 1 purge region 204a. The inert gas supplied into the first purge region 204a acts as, for example, a purge gas in a film forming process (S30) and a cleaning process (S50) described later. In addition to N 2 gas, for example, a rare gas such as helium (He) gas, neon (Ne) gas, or argon (Ar) gas can be used as the inert gas.

From the second inert gas supply pipe 232f, for example, nitrogen (N2) gas is supplied as an inert gas via the mass flow controller 234f, the valve 235f, and the second inert gas supply port (not shown). 2 in the purge region 204b. The inert gas supplied into the second purge region 204b acts as, for example, a purge gas in a film forming process (S30) and a cleaning process (S50) described later. In addition to N 2 gas, for example, a rare gas such as He gas, Ne gas, Ar gas, or the like can be used as the inert gas.

The downstream end of the third inert gas supply pipe 232g provided in the third inert gas supply unit 257 is connected to the downstream side of the valve 235a of the raw material gas supply pipe 232a. On the upstream side of the third inert gas supply pipe 232g, in order from the upstream direction, an inert gas supply source 233g, a mass flow controller (MFC) 234g as a flow rate controller (flow rate control unit), and a valve as an on-off valve 235g is provided. From the third inert gas supply pipe 232g, as an inert gas, for example, N2 gas passes through the mass flow controller 234g, the valve 235g, the source gas supply pipe 232a, and the source gas supply port 251a in the first processing region. It is supplied into 201a.

The downstream end of the fourth inert gas supply pipe 232h provided in the fourth inert gas supply unit 258 is connected to the downstream side of the valve 235b of the gas supply pipe 232b. On the upstream side of the fourth inert gas supply pipe 232h, in order from the upstream direction, an inert gas supply source 233h, a mass flow controller (MFC) 234h that is a flow rate controller (flow rate control unit), and a valve that is an on-off valve 235h is provided. From the fourth inert gas supply pipe 232h, as an inert gas, for example, N 2 gas is supplied to the second processing region 201b via the mass flow controller 234h, the valve 235h, the gas supply pipe 232b, and the reactive gas supply port 252a. Supplied in.

The inert gas supplied into the first processing region 201a and the second processing region 201b acts as, for example, a carrier gas or a dilution gas in a film forming step (S30) and a cleaning step (S50) described later. .

The downstream end of the fifth inert gas supply pipe 232i included in the fifth inert gas supply unit 259 is connected to the downstream side of the valve 235d of the second cleaning gas supply pipe 232d. On the upstream side of the fifth inert gas supply pipe 232i, in order from the upstream direction, an inert gas supply source 233i, a mass flow controller (MFC) 234i that is a flow rate controller (flow rate control unit), and a valve that is an on-off valve 235i is provided. From the fifth inert gas supply pipe 232 i, for example, N 2 gas is supplied as an inert gas through the mass flow controller 234 i, the valve 235 i, the second cleaning gas supply pipe 232 d, and the lower end of the opening 209. 203 is supplied.

The first inert gas supply unit 255 is mainly configured by the first inert gas supply pipe 232e, the mass flow controller 234e, and the valve 235e. The inert gas supply source 233e and the first inert gas supply port (not shown) may be included in the first inert gas supply unit 255. In addition, a second inert gas supply unit 256 is mainly configured by the second inert gas supply pipe 232f, the mass flow controller 234f, and the valve 235f. Note that the inert gas supply source 233f and the second inert gas supply port (not shown) may be included in the second inert gas supply unit 256. Further, a third inert gas supply unit 257 is mainly configured by the third inert gas supply pipe 232e, the mass flow controller 234g, and the valve 235g. Note that the inert gas supply source 233g, the source gas supply pipe 232a, and the source gas supply port 251a may be included in the third inert gas supply unit 257. Also, a fourth inert gas supply unit 258 is mainly configured by the fourth inert gas supply pipe 232h, the mass flow controller 234h, and the valve 235h. Note that the inert gas supply source 233h, the gas supply pipe 232b, and the reactive gas supply port 252a may be included in the fourth inert gas supply unit 258. Further, a fifth inert gas supply unit 258 is mainly configured by the fifth inert gas supply pipe 232i, the mass flow controller 234i, and the valve 235i. The second cleaning gas supply pipe 232d, the inert gas supply source 233i, and the opening 209 (the lower end of the opening 209) may be included in the fifth inert gas supply unit. In addition, the inert gas supply unit of the gas supply unit according to the present embodiment is mainly configured by the first to fifth inert gas supply units 255 to 259.

(Exhaust part)
As shown in FIG. 4, the reaction vessel 203 is provided with a plurality of exhaust portions that exhaust the space below the susceptor 217 in the reaction vessel 203. In other words, in the present embodiment, two exhaust parts, the first exhaust part 207 and the second exhaust part 208, are provided. The first exhaust unit 207 and the second exhaust unit 208 are provided at positions that are symmetric (line symmetric or point symmetric) with respect to the center of the susceptor 217. Specifically, the first exhaust unit 207 is disposed adjacent to the first processing region 201a, and the second exhaust unit 208 is disposed adjacent to the second processing region 201b.

Thereby, when supplying the cleaning gas into the reaction vessel 203, the flow of the cleaning gas can be formed by adjusting the exhaust gas flow rates of the first exhaust part 207 and the second exhaust part 208, respectively. As a result, it is possible to control so that more cleaning gas flows in an area where there are a lot of deposits and by-products (hereinafter also referred to as cleaning objects) in the reaction container 203 than in an area where there are few cleaning objects. Therefore, the cleaning object in the reaction vessel 203 can be removed reliably. In addition, when cleaning inside the reaction vessel 203 is performed, occurrence of over-etching in the reaction vessel 203 can be reduced, and generation of particles due to cleaning can be suppressed.

The first exhaust unit 207 includes a first exhaust pipe 210. The first exhaust pipe 210 includes, in order from the upstream side, a pressure sensor as a pressure detector (pressure detector) that detects the pressure in the reaction vessel 203 (particularly in the first processing region 201a), the first exhaust. An APC (Auto Pressure Controller) valve 211 as a flow rate adjusting unit that adjusts an exhaust flow rate of the cleaning gas from the unit 207, and a valve 212 as an on-off valve that adjusts the exhaust time of the cleaning gas from the first exhaust unit 207. Is provided. The APC valve 211 opens and closes the valve and can exhaust and stop exhaust gas such as cleaning gas from the first exhaust pipe 210. Further, the APC valve 211 adjusts the valve opening to This is an on-off valve capable of adjusting the exhaust flow rate of exhaust gas such as cleaning gas.

An opening (first exhaust inert gas supply port) 260 a is opened upstream of the APC valve 211 of the first exhaust pipe 210. Connected to the opening 260 a is a first exhaust inert gas supply unit 260 that adjusts the exhaust load of the cleaning gas of the first exhaust unit 207 by supplying an inert gas into the first exhaust pipe 210. Has been. As shown in FIG. 5 (e), the first exhaust inert gas supply section 260 includes a first exhaust inert gas supply pipe 232j, and the first exhaust inert gas supply pipe 232j. Is hermetically connected to the first exhaust inert gas supply port 260a. On the upstream side of the first exhaust inert gas supply pipe 232j, in order from the upstream direction, there are a raw material gas supply source 233j, a mass flow controller (MFC) 234j which is a flow rate controller (flow rate control unit), and an on-off valve. A valve 235j is provided. From the first exhaust inert gas supply pipe 232j, as the inert gas, for example, N2 gas is supplied via the mass flow controller 234j, the valve 235j, and the first exhaust inert gas supply port 260a. It is supplied into the exhaust pipe 210.

As shown in FIG. 4, the second exhaust part 208 includes a second exhaust pipe 213. In the second exhaust pipe 213, a pressure sensor as a pressure detector (pressure detection unit) for detecting the pressure in the reaction vessel 203 (particularly in the second processing region 201 b), the second exhaust, in order from the upstream side. An APC (Auto Pressure Controller) valve 214 as a flow rate adjusting unit that adjusts the exhaust gas flow rate of the cleaning gas from the unit 208, and a valve 215 as an on-off valve that adjusts the exhaust time of the cleaning gas from the second exhaust unit 208 Is provided. The APC valve 214 opens and closes the valve, and can exhaust and stop exhaust gas such as cleaning gas from the second exhaust pipe 213, and further adjust the valve opening to This is an on-off valve capable of adjusting the exhaust flow rate of exhaust gas such as cleaning gas.

An opening (second inert gas supply port for exhaust) 261a is opened upstream of the APC valve 214 of the second exhaust pipe 213. Connected to the opening 261a is a second exhaust inert gas supply unit 261 that adjusts the exhaust load of the cleaning gas of the second exhaust unit 208 by supplying an inert gas into the second exhaust pipe 213. Has been. As shown in FIG. 5E, the second exhaust inert gas supply unit 261 includes a second exhaust inert gas supply pipe 232k, and the second exhaust inert gas supply pipe 232k. Is hermetically connected to the second exhaust inert gas supply port 261a. On the upstream side of the second exhaust inert gas supply pipe 232k, in order from the upstream direction, there are a raw material gas supply source 233k, a mass flow controller (MFC) 234k which is a flow rate controller (flow rate control unit), and an on-off valve. A valve 235k is provided. From the second exhaust inert gas supply pipe 232k, as the inert gas, for example, N2 gas is supplied via the mass flow controller 234k, the valve 235k, and the second exhaust inert gas supply port 261a. It is supplied into the exhaust pipe 213.

The first exhaust inert gas supply unit 260 is mainly configured by the first exhaust inert gas supply pipe 232j, the mass flow controller 234j, and the valve 235j. Note that the inert gas supply source 233j and the first inert gas supply port 260a may be included in the first exhaust inert gas supply unit 260. In addition, the second exhaust inert gas supply unit 261 is mainly configured by the second exhaust inert gas supply pipe 232k, the mass flow controller 234k, and the valve 235k. The inert gas supply source 233k and the second exhaust inert gas supply port 261a may be included in the second exhaust inert gas supply unit 261.

Mainly, the first exhaust pipe 210, the pressure sensor, the APC valve 211, the valve 212, and the first exhaust inert gas supply section 260 constitute the first exhaust section 207. Further, the second exhaust part 208 is mainly configured by the second exhaust pipe 213, the pressure sensor, the APC valve 214, the valve 215, and the second exhaust inert gas supply part 261.

The downstream end of the first exhaust pipe 210 is connected to the downstream side of the valve 215 of the second exhaust pipe 213. An APC (Auto Pressure Controller) valve 243 serving as a pressure regulator (pressure adjusting unit) and a valve 245 serving as an on-off valve are provided downstream of the connection point of the second exhaust pipe 213 with the first exhaust pipe 210. A vacuum pump 246 serving as an evacuation device is connected to the evacuation device 203 so that the pressure in the reaction vessel 203 can be evacuated to a predetermined pressure (degree of vacuum). The APC valve 243 is an open / close valve that can open and close the valve to stop evacuation and evacuation in the reaction vessel 203, and further adjust the valve opening to adjust the pressure. The exhaust part is mainly configured by the first exhaust part 207, the second exhaust part 208, and the APC valve 243. The vacuum pump 246 may be included in the exhaust part.

(Control part)
The controller 221 serving as a control unit (control means) includes mass flow controllers 234a to 234k, valves 212, 215, 235a to 235k, pressure sensors, APC valves 211, 214, 243, vacuum pump 246, heater 218, temperature sensor 274, and rotation. It is connected to a mechanism 267, an elevating mechanism 268, a heater power source 225, and the like. The controller 221 adjusts the flow rates of various gases by the mass flow controllers 234a to 234k, opens and closes the valves 212, 215, and 235a to 235k, adjusts the opening of the APC valves 211, 214, and 243, and adjusts the pressure based on the pressure sensor. The temperature adjustment operation of the heater 218 based on the temperature sensor 274, the start / stop of the vacuum pump 246, the rotation speed adjustment operation of the rotation mechanism 267, the control of the elevating operation of the elevating mechanism 268, and the power supply control by the heater power source 225 are performed. .

(3) Substrate Processing Step Subsequently, as a step of the semiconductor manufacturing process according to the present embodiment, a substrate processing step performed using the process chamber 202a including the reaction vessel 203 described above is mainly shown in FIGS. Will be described. FIG. 6 is a flowchart showing a substrate processing process according to the present embodiment, and FIG. 7 is a flowchart showing a process on the substrate in the film forming process in the substrate processing process according to the present embodiment. FIG. 8 is a flowchart showing a cleaning process in the substrate processing process according to the present embodiment. FIG. 9 is a schematic top view schematically showing the flow of the cleaning gas flowing in the reaction vessel 203 according to the embodiment of the present invention. FIG. 9A shows the case where the cleaning gas is supplied from the central portion of the reaction vessel 203. (B) shows the case where the cleaning gas is supplied from a region where the number of cleaning objects in the reaction vessel 203 is small. In the following description, the operation of each component of the process chamber 202a of the substrate processing apparatus 100 is controlled by the controller 221.

Here, an example in which trisilylamine (TSA), which is a silicon-containing gas, is used as a source gas, oxygen gas, which is an oxygen-containing gas, is used as a reaction gas, and an SiO film is formed as an insulating film on the wafer 200 will be described. To do.

(Substrate loading / placement process (S10))
First, the wafer push-up pin is raised to the transfer position of the wafer 200, and the wafer push-up pin is passed through the through hole of the susceptor 217. As a result, the wafer push-up pins are protruded by a predetermined height from the surface of the susceptor 217. Subsequently, the gate valve 244 a is opened, and a predetermined number (for example, five) of wafers 200 are loaded into the reaction container 203 using the vacuum transfer robot 112. Then, the wafer 200 is placed in each of a plurality of (five in the present embodiment) concave portions 216 serving as substrate placement portions provided in the susceptor 217. Thereby, the wafer 200 is supported in a horizontal posture on the wafer push-up pins protruding from the surface of the susceptor 217.

When the wafer 200 is loaded into the reaction vessel 203, the vacuum transfer robot 112 is retracted out of the reaction vessel 203, the gate valve 244a is closed, and the reaction vessel 203 is sealed. Thereafter, the wafer push-up pins are lowered to place a predetermined number of wafers 200 on the susceptor 217.

When the wafer 200 is carried into the reaction vessel 203, the first to fifth non-removal portions are exhausted while the reaction vessel 203 is exhausted by at least one of the first exhaust unit 207 and the second exhaust unit 208. It is preferable to supply N 2 gas as a purge gas into the reaction vessel 203 from at least one of the active gas supply units 255 to 259. That is, the vacuum pump 246 is activated and the APC valve 243 is opened to evacuate the inside of the reaction vessel 203. For example, the valve 235e of the first inert gas supply unit 255 is opened to supply N2 gas into the reaction vessel 203. It is preferable to do. Thereby, it is possible to suppress intrusion of particles into the processing region 201 and adhesion of particles onto the wafer 200.

(Temperature increase / pressure adjustment step (S20))
Subsequently, power is supplied to the heater 218 embedded in the susceptor 217, and the surface of the wafer 200 is heated to a predetermined temperature (for example, 200 ° C. or higher and 400 ° C. or lower). At this time, the temperature of the heater 218 is adjusted by controlling the power supply to the heater 218 based on the temperature information detected by the temperature sensor 274.

In the heat treatment of the wafer 200 made of silicon, if the surface temperature is heated to 750 ° C. or higher, impurity diffusion occurs in the source region and drain region formed on the surface of the wafer 200, and the circuit characteristics deteriorate. However, the performance of the semiconductor device may be degraded. Therefore, by limiting the temperature of the wafer 200 as described above, it is possible to suppress the diffusion of impurities in the source region and the drain region formed on the surface of the wafer 200, the deterioration of circuit characteristics, and the deterioration of the performance of the semiconductor device.

The inside of the reaction vessel 203 is evacuated by a vacuum pump 246 so that the inside of the reaction vessel 203 has a desired pressure (for example, 0.1 Pa to 300 Pa, preferably 20 Pa to 40 Pa). At this time, the pressure in the reaction vessel 203 is measured by a pressure sensor, and the opening degree of the APC valve 243 is feedback-controlled based on the measured pressure information.

Further, while the wafer 200 is heated, the rotation mechanism 267 is operated to start the rotation of the susceptor 217. At this time, the rotation speed of the susceptor 217 is controlled by the controller 221. The rotation speed of the susceptor 217 is, for example, 1 rotation / second. Note that the susceptor 217 is always rotated until a film forming step (S30) described later is completed. By rotating the susceptor 217, the wafer 200 starts moving in the order of the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b, and each region is moved to the wafer. 200 will pass.

(Film formation process (S30))
Next, a TSA gas as a source gas is supplied into the first processing region 201a, and an oxygen gas as a reactive gas is supplied into the second processing region 201b, thereby forming a SiO film on the wafer 200. Perform the process. In the following description, the TSA gas supply, the oxygen gas supply, and the inert gas supply are performed in parallel.

When the wafer 200 is heated to reach a desired temperature and the susceptor 217 reaches a desired rotation speed, at least the valves 235a, 235b, 235e, and 235f are opened, and the processing region 201 of the source gas, the reactive gas, and the inert gas is opened. And supply to the purge region 204 is started.

That is, the valve 235a is opened to start the supply of TSA gas into the first processing region 201a, the valve 235b is opened to start the supply of oxygen gas into the second processing region 201b, and the valves 235e and 235f are further turned on. Opening and the supply of N 2 gas which is an inert gas into the first purge region 204a and the second purge region 204b is started. At this time, at least the APC valve 243 is appropriately adjusted so that the pressure in the reaction vessel 203 is, for example, a pressure in the range of 10 Pa to 1000 Pa. At this time, the temperature of the heater 218 is set to such a temperature that the temperature of the wafer 200 becomes a temperature in the range of 200 ° C. to 400 ° C., for example.

That is, the valve 235a is opened and the TSA gas is supplied from the source gas supply pipe 232a to the first processing region 201a through the source gas supply port 251a, while the first exhaust pipe 210 or the second exhaust pipe 213 is connected. Exhaust from at least one of them. At this time, the mass flow controller 234a is adjusted so that the flow rate of the TSA gas becomes a predetermined flow rate. Note that the TSA gas supply flow rate controlled by the mass flow controller 234a is, for example, a flow rate in the range of 100 sccm to 5000 sccm.

When supplying the TSA gas into the first processing region 201a, the valve 235g is opened, and N2 gas as a carrier gas or dilution gas is supplied into the first processing region 201a from the third inert gas supply pipe 232g. It is preferable to supply.

Further, the valve 235a and the valve 235b are opened, and the first exhaust pipe 210 or the second exhaust pipe is supplied while oxygen gas is supplied from the gas supply pipe 232b to the second processing region 201b through the reaction gas supply port 252a. The gas is exhausted from at least one of 213. At this time, the mass flow controller 234b is adjusted so that the flow rate of the oxygen gas becomes a predetermined flow rate. Note that the supply flow rate of oxygen gas controlled by the mass flow controller 234b is, for example, a flow rate in the range of 1000 sccm to 10,000 sccm.

When supplying oxygen gas into the second processing region 201b, the valve 235h is opened, and N2 gas as a carrier gas or dilution gas is supplied into the second processing region 201b from the fourth inert gas supply pipe 232h. It is preferable to supply.

Further, the valves 235a and 235b are opened, and the valves 235e and 235f are further opened. That is, N 2 gas, which is an inert gas as a purge gas, is supplied from the first inert gas supply pipe 232e and the second inert gas supply pipe 232f to the first inert gas supply port and the second inert gas. The gas is exhausted while being supplied to the first purge region 204a and the second purge region 204b through the supply port. At this time, the mass flow controllers 234e and 234f are respectively adjusted so that the flow rate of the N2 gas becomes a predetermined flow rate. In addition, a gap is provided between the end of the partition plate 205 and the side wall of the reaction vessel 203. An inert gas may be ejected into the first processing region 201a and the second processing region 201b from the first purge region 204a, the second purge region 204b, and the gaps described above. Thereby, intrusion of the source gas into the first purge region 204a and the second purge region 204b can be suppressed.

At the same time as the supply of the reaction gas into the reaction vessel 203, the supply of high-frequency power from the high-frequency power source 219 to the plasma generation unit 206 provided in the second processing region 201b is started. The oxygen gas supplied into the second processing region 201b and having passed through the plasma generation unit 206 becomes a plasma state in the second processing region 201b, and the active species contained therein are supplied to the wafer 200.

Oxygen gas has a high reaction temperature and hardly reacts at the processing temperature of the wafer 200 and the pressure in the reaction vessel 203 as described above, but the oxygen gas is brought into a plasma state as in the present embodiment, and the active species contained therein are changed. When supplied, the film forming process can be performed even in a temperature range of 400 ° C. or less, for example. When the processing temperature required for the source gas and the reaction gas is different, the heater 218 is controlled in accordance with the temperature of the source gas having the lower processing temperature, and the other source gas that requires a higher processing temperature is selected. The plasma state may be supplied. By using plasma in this way, the wafer 200 can be processed at a low temperature. Therefore, it becomes possible to process the wafer 200 having heat-sensitive wiring such as aluminum. In addition, generation of foreign substances such as products due to incomplete reaction of the raw material gas can be suppressed, and the uniformity and withstand voltage characteristics of the thin film formed on the wafer 200 can be improved. In addition, productivity of substrate processing can be improved, for example, the oxidation processing time can be shortened by the high oxidizing power of oxygen gas in a plasma state.

As described above, by rotating the susceptor 217, the wafer 200 is repeatedly moved in the order of the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. Therefore, supply of TSA gas (S31), supply of N2 gas (purge) (S32), supply of oxygen gas in a plasma state (S33), and supply of N2 gas (purge) (S34) are performed on the wafer 200. As one cycle, this cycle is performed a predetermined number of times (see FIG. 7).

[First Processing Area Pass (S31)]
First, TSA gas is supplied to the surface of the wafer 200 that has passed through the first processing region 201 a, and a silicon-containing layer is formed on the wafer 200.

[First purge region passing (S32)]
Next, the wafer 200 on which the silicon-containing layer is formed passes through the first purge region 204a. At this time, N 2 gas which is an inert gas is supplied to the wafer 200.

[Second Processing Area Pass (S33)]
Next, oxygen gas is supplied to the wafer 200 that has passed through the second processing region 201 b, and a silicon oxide layer (SiO layer) is formed on the wafer 200. That is, the oxygen gas reacts with a part of the silicon-containing layer formed on the wafer 200 in the first processing region 201a. As a result, the silicon-containing layer is oxidized and modified into a SiO layer containing silicon and oxygen.

[Second Purge Area Passing (S34)]
Then, the wafer 200 on which the SiO layer is formed in the second processing region 201b passes through the second purge region 204b. At this time, N 2 gas which is an inert gas is supplied to the wafer 200.

In this way, one rotation of the susceptor 217 is defined as one cycle, that is, one cycle passes through the wafer 200 through the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. By performing this cycle at least once, a SiO film having a predetermined thickness can be formed on the wafer 200.

After the SiO film having a desired thickness is formed on the wafer 200, at least the valve 234a and the valve 235b are closed, and the supply of the TSA gas and the oxygen gas to the first processing region 201a and the second processing region 201b is stopped. To do. At this time, power supply to the plasma generation unit 206 is also stopped.

(Substrate unloading step (S40))
Then, the wafer push-up pins are raised, and the wafer 200 is supported on the wafer push-up pins protruded from the surface of the susceptor 217. At this time, the wafer 200 is supported at a height that is not affected by the heater 218. Thereafter, the gate valve 244 a is opened, and the wafer 200 is unloaded from the reaction vessel 203 using the vacuum transfer robot 112. In the above-described substrate carry-in process (S10) to film formation process (S30), conditions such as the temperature of the wafer 200, the pressure in the reaction vessel 203, the flow rate of each gas, the power applied to the plasma generation unit 206, and the processing time. And the like can be arbitrarily adjusted depending on the material and film thickness of the film to be modified.

(Cleaning step (S50))
After the above-described film formation step (S30) is repeated a predetermined number of times, particles generated in the above-described film formation step (S30) and attached (deposited) in the reaction vessel 203, or by-products generated in the reaction vessel 203 A cleaning step (S50) for removing a cleaning object such as an object is performed (see FIG. 8).

[Dummy substrate loading / mounting step (S51)]
First, the dummy wafer 300 is placed on the susceptor 217 in the same procedure as in the above-described substrate carry-in / placement step (S10). In the above-described film forming step (S30), the cleaning object is not normally deposited on the place where the wafer 200 is placed on the susceptor 217. Therefore, when the cleaning step (S50) is performed, by placing the dummy wafer 300 in the recess 216 that is the place where the wafer 200 is placed on the susceptor 217, it is possible to prevent the recess 216 from being etched by the cleaning gas. Thereby, generation | occurrence | production of a particle can be reduced more.

[Temperature increase / pressure adjustment step (S52)]
Subsequently, electric power is supplied to the heater 218 embedded in the susceptor 217 to heat the inside of the reaction vessel 203 to a predetermined temperature. At this time, the temperature of the heater 218 is adjusted by controlling the power supply to the heater 218 based on the temperature information detected by the temperature sensor 274.

The inside of the reaction vessel 203 is evacuated by a vacuum pump 246 so that the inside of the reaction vessel 203 has a desired pressure (for example, 0.1 Pa to 300 Pa, preferably 20 Pa to 40 Pa). At this time, the pressure in the reaction vessel 203 is measured by a pressure sensor, and the opening degree of the APC valve 243 is feedback-controlled based on the measured pressure information.

Also, while rotating the inside of the reaction vessel 203, the rotation mechanism 267 is operated to start the rotation of the susceptor 217. At this time, the rotation speed of the susceptor 217 is controlled by the controller 221. The rotation speed of the susceptor 217 is, for example, 1 rotation / second. The susceptor 217 is preferably rotated until the cleaning gas supply step (S53) described later is completed.

[Cleaning gas supply step (S53)]
When the inside of the reaction vessel 203 is heated and reaches a desired temperature, at least one of the first cleaning gas supply unit 253 and the second cleaning gas supply unit 254 enters the reaction vessel 203 with three gases as cleaning gas. Supply of nitrogen fluoride (NF3) gas is started. At this time, the APC valve 243 is appropriately adjusted so that the pressure in the reaction vessel 203 is, for example, a pressure in the range of 10 Pa to 1000 Pa.

When supplying the cleaning gas from the first cleaning gas supply unit 253, the valve 235c is opened, and the second process is performed from the first cleaning gas supply pipe 232c through the gas supply pipe 232b and the reactive gas supply port 252a. A cleaning gas is supplied into the region 201b (reaction vessel 203). The cleaning gas supplied into the second processing region 201b passes through the plasma generation unit 206 and enters a plasma state. At this time, the mass flow controller 234c is adjusted so that the flow rate of the cleaning gas becomes a predetermined flow rate.

When supplying the cleaning gas from the second cleaning gas supply unit 254, the valve 235d is opened, and the cleaning gas is supplied into the reaction vessel 203 from the second cleaning gas supply pipe 232d through the opening 209. The cleaning gas supplied from the second cleaning gas supply unit 254 is brought into a plasma state in advance by the remote plasma mechanism 236, for example. At this time, the mass flow controller 235d is adjusted so that the flow rate of the cleaning gas becomes a predetermined flow rate.

The supply flow rate of the cleaning gas controlled by the mass flow controllers 234c and 234d is, for example, a flow rate in the range of 100 sccm to 5000 sccm.

When supplying the cleaning gas from the first cleaning gas supply unit 253 or the second cleaning gas supply unit 254 into the reaction vessel 203, the valves 235e to 235i are opened and the first to fifth inert gas supply pipes are opened. A dilution gas, a carrier gas, or an N 2 gas as a purge gas may be supplied into the reaction vessel 203 from each of 232e to 232i. At this time, the mass flow controllers 234e to 234i are adjusted so that the flow rate of the N2 gas becomes a predetermined flow rate. Thereby, for example, the supply of the cleaning gas into the reaction vessel 203 can be promoted.

Here, in the reaction vessel 203, the amount of the cleaning object varies depending on the distance from the source gas supply position, that is, the distance from the source gas supply port 251a. That is, the closer to the source gas supply port 251a, the larger the amount of the cleaning object compared to the region farther from the source gas supply port 251a.

Specifically, in this embodiment, as described above, TSA gas, which is a silicon-containing gas, is supplied as a source gas into the first processing region 201a. Therefore, when the above-described film forming step (S30) is repeated, particles (such as a film formed of a silicon-containing gas) are formed on the inner wall of the reaction vessel 203, the partition plate 205, and the like in the first processing region 201a. The object to be cleaned) adheres and accumulates. In particular, in the vicinity of the source gas supply port 251a, which is the source gas supply position of the source gas supply unit 251, the amount of deposition (deposition amount) of the cleaning object increases. The source gas also adheres to a portion on the susceptor 217 that passes through the first processing region 201a where the wafer 200 is not placed.

In contrast, as described above, oxygen gas, which is an oxygen-containing gas, is supplied as a reactive gas into the second processing region 201b. For this reason, compared with the vicinity of the source gas supply port 251a, the cleaning object is less likely to adhere to the vicinity of the reaction gas supply port 252a that is the reaction gas supply position of the reaction gas supply unit 252.

However, in the second processing region 201b, for example, when the susceptor 217 rotates, the source gas (silicon-containing gas) that passes through the first processing region 201a and adheres to the susceptor 217 becomes the second processing region. When passing through the region 201b, it may react with a reactive gas (oxygen-containing gas). That is, in the second processing region 201b, the by-product that is the cleaning target is formed by the reaction of the source gas and the reactive gas at a place other than on the wafer 200 in the above-described film forming step (S30). May be generated. This by-product may be deposited on the inner wall of the reaction vessel 203 or the partition plate 205 in the second processing region 201b, for example. However, normally, the amount of the cleaning object in the first processing region 201a is larger than the amount of the cleaning object in the second processing region 201b. That is, the amount of the cleaning object is smaller in the second processing region 201b away from the source gas supply port 251a than in the first processing region 201a close to the source gas supply port 251a.

Also, as described above, N 2 gas, which is an inert gas, is supplied into the first purge region 204a and the second purge region 204b. An inert gas is a gas that cannot form a film. In the first purge region 204a and the second purge region 204b, the source gas and the reaction gas hardly react. Accordingly, there are fewer cleaning objects in the first purge region 204a and the second purge region 204b than in the first processing region 201a and the second processing region 201b.

Therefore, in the cleaning gas supply step (S53), as described above, when supplying the cleaning gas into the reaction vessel 203, the exhaust gas flow rates of the first exhaust unit 207 and the second exhaust unit 208 are adjusted. As a result, a flow of the cleaning gas is formed.

That is, the cleaning gas supplied into the reaction vessel 203 is exhausted from the first exhaust unit 207 and the second exhaust unit 208. At this time, if the exhaust gas flow rates of the first exhaust unit 207 and the second exhaust unit 208 are made different from each other, a larger amount of cleaning gas is exhausted from the exhaust unit having a large exhaust gas flow rate. . As a result, more cleaning gas can flow in the region 220 with a large amount of cleaning object in the reaction vessel 203 than in other regions (regions with a small amount of cleaning object). As a result, the object to be cleaned such as deposits and by-products in the reaction container 203 can be removed, and the occurrence of over-etching in the reaction container 203 can be reduced and the generation of particles can be suppressed during cleaning.

As a first method, of the first exhaust unit 207 and the second exhaust unit 208 provided in the reaction vessel 203, the first exhaust unit is an exhaust unit close to the source gas supply port 251a of the source gas supply unit 251. The first exhaust unit 207 and the first exhaust unit 207 are arranged so that the exhaust gas flow rate of the cleaning gas in the exhaust unit 207 is larger than the exhaust gas flow rate of the cleaning gas in the second exhaust unit 208 that is an exhaust unit away from the source gas supply port 251a. The two exhaust parts 208 may be controlled respectively.

Specifically, for example, when supplying the cleaning gas into the reaction vessel 203, the exhaust flow rate of the cleaning gas in the first exhaust unit 207 near the source gas supply port 251a is the second that is separated from the source gas supply port 251a. The opening degree of the APC valves 211 and 214 may be controlled so as to be larger than the exhaust gas flow rate of the cleaning gas in the exhaust part 208.

Further, as a second method, when supplying the cleaning gas into the reaction vessel 203, the exhaust time of the cleaning gas of the first exhaust unit 207 near the source gas supply port 251a is the second time away from the source gas supply port 251a. The opening times of the valves 212 and 215 may be controlled so as to be longer than the exhaust time of the cleaning gas in the second exhaust unit 208. Specifically, the valves 212 and 215 are opened and closed so that the opening time of the valve 212 provided in the first exhaust part is longer than the opening time of the valve 215 provided in the second exhaust part. It is good to control.

As a third method, when supplying the cleaning gas into the reaction vessel 203, the exhaust load of the cleaning gas in the first exhaust unit 207 near the source gas supply port 251a is separated from the source gas supply position 251a. The exhaust gas is supplied from the first and second exhaust inert gas supply units 260 and 261 into the first and second exhaust units 207 and 208 so as to be smaller than the exhaust load of the cleaning gas in the second exhaust unit 208. The flow rate of the inert gas may be adjusted respectively. Specifically, the flow rate of the inert gas supplied from the first exhaust inert gas supply unit 260 into the first exhaust pipe 210 is changed from the second exhaust inert gas supply unit 261 to the second exhaust. The mass flow controllers 234j and 234k may be adjusted so as to be less than the flow rate of the inert gas supplied into the pipe 213. In the present embodiment, the large exhaust load of the cleaning gas means that the resistance applied to the cleaning gas introduced from the reaction vessel 203 to the exhaust part is large and the cleaning gas is difficult to be introduced into the exhaust part. Further, the small exhaust load of the cleaning gas means that the resistance to the cleaning gas introduced from the reaction vessel 203 to the exhaust part is small and the cleaning gas is easily introduced into the exhaust part.

By using the above-described first to third methods alone or in combination, for example, as shown in FIG. 9A, from the center of the reaction vessel 203 (that is, the second cleaning gas supply unit 254). When the cleaning gas is supplied, the exhaust gas flow rates of the first exhaust unit 207 and the second exhaust unit 208 are adjusted so that a large amount of the cleaning gas flows in the region 220 where the cleaning object in the reaction vessel 203 is large. it can. That is, the APC 211, the valve 212, and the mass flow controller 234j of the first exhaust unit 207 are set so that the cleaning gas exhaust flow rate of the first exhaust unit 207 is larger than the exhaust gas flow rate of the cleaning gas of the second exhaust unit 208. , And the APC 214, the valve 215, and the mass flow controller 234k of the second exhaust unit 208 are adjusted. In FIG. 9A, as an example, the state in which the inert gas supplied into the reaction vessel 203 flows is schematically shown by arrows. In FIG. 9A, the partition plate 205 and the like are omitted for easy understanding.

Thereby, even when the cleaning gas is uniformly supplied into the reaction vessel 203 from the central portion in the reaction vessel 203, the cleaning gas can be flowed more into the region 220 where there are many cleaning objects. Therefore, the cleaning object can be reliably removed in the region 220 where the cleaning object is large, and the etching of the inner wall of the reaction vessel 203, the partition plate 205, and the like by the cleaning gas can be reduced in the region where the cleaning object is small.

Further, for example, as shown in FIG. 9B, even when the cleaning gas is supplied from a region (ie, the first cleaning gas supply unit 253) in the reaction container 203 where there is little cleaning object, The flow of the cleaning gas is adjusted by adjusting the exhaust gas flow rates of the first exhaust unit 207 and the second exhaust unit 208 so that a large amount of the cleaning gas flows in the region 220 having a large amount of cleaning objects in the 203. Can be formed. That is, as in the case shown in FIG. 9A, the cleaning object in the reaction vessel 203 is adjusted by adjusting the exhaust gas flow rates of the cleaning gas from the first exhaust unit 207 and the second exhaust unit 208, respectively. The flow of the cleaning gas can be formed so that more cleaning gas flows in the large area 220. In addition, in FIG.9 (b), the mode that the inert gas supplied in the reaction container 203 flows as an example is typically shown by the arrow. Further, in FIG. 9B, the partition plate 205 and the like are omitted for easy understanding.

Thereby, even when the cleaning gas is supplied into the reaction vessel 203 from the region where the cleaning target in the reaction vessel 203 is small, the cleaning gas can flow more into the region 220 where the cleaning target is high. Accordingly, the cleaning object can be reliably removed in the region 220 with a large amount of cleaning object, and the inner wall of the reaction vessel 203, the partition plate 205, and the like can be further reduced by the cleaning gas in the region with a small amount of cleaning object. .

Note that, here, the first processing region 201a to which the silicon-containing gas is supplied has been described as an example of the substrate processing with many cleaning objects, but the present invention is not limited thereto. For example, there may be more cleaning objects in the second processing region 201b than in the first processing region 201a depending on the gas used and the device to be processed. In this case, the cleaning gas is caused to flow from the first processing region 201a having a small number of cleaning objects to the second processing region having a large number of cleaning objects.

[Dummy substrate unloading step (S54)]
After performing the cleaning for a predetermined time, the dummy wafer 300 is unloaded in the reverse procedure of loading the dummy wafer 300. That is, the wafer push-up pins are raised, and the dummy wafer 300 is supported on the wafer push-up pins protruded from the surface of the susceptor 217. Thereafter, the gate valve 244a is opened, the dummy wafer 300 is carried out of the reaction vessel 203 using the vacuum transfer robot 112, and the substrate processing process according to the present embodiment is completed. In the above-described cleaning step (S50), conditions such as the pressure in the reaction vessel 203, the flow rate of the cleaning gas, the power applied to the plasma generator 206, the cleaning time, and the like are the objects to be cleaned deposited in the reaction vessel 203. It can be arbitrarily adjusted according to the amount of.

(4) Effects according to the present embodiment According to the present embodiment, the following one or more effects are achieved.

(A) According to the present embodiment, two exhaust parts, the first exhaust part 207 and the second exhaust part, for exhausting the space below the susceptor 217 are provided in the reaction vessel 203. Further, when supplying the cleaning gas into the reaction vessel 203, the flow of the cleaning gas is formed by adjusting the exhaust gas flow rates of the first exhaust unit 207 and the second exhaust unit 208, respectively. Yes. As a result, it is possible to remove objects to be cleaned such as deposits and by-products in the reaction vessel 203, and when performing cleaning, it is possible to reduce the occurrence of over-etching in the reaction vessel 203 and suppress the generation of particles. As a result, the quality of substrate processing can be improved. In addition, the amount of cleaning gas used can be reduced.

(B) In the present embodiment, more cleaning gas flows in the region 220 with a large amount of cleaning object in the reaction vessel 203 than in the region with a small amount of cleaning object. That is, when the cleaning gas is supplied into the reaction vessel 203, the first exhaust unit 207 and the second exhaust unit 208, which are close to the source gas supply position (source gas supply port 251 a) of the source gas supply unit 251. The exhaust gas flow rate of the first exhaust unit 207 is larger than the exhaust gas flow rate of the cleaning gas in the second exhaust unit 208 away from the source gas supply position (source gas supply port 251a) of the source gas supply unit 251. In addition, the first exhaust unit 207 and the second exhaust unit 208 are respectively controlled. As a result, the cleaning object in the reaction vessel 203 can be further removed, and when cleaning is performed, the occurrence of over-etching in the reaction vessel 203 is further reduced, and the generation of particles can be further suppressed.

(C) In this embodiment, the first exhaust part 207 and the second exhaust part 208 are provided with APC valves 211 and 214 for adjusting the exhaust flow rate, respectively. Further, when supplying the cleaning gas into the reaction vessel 203, the cleaning gas exhaust flow rate of the first exhaust unit 207 close to the source gas supply port 251 a of the source gas supply unit 251 is the source gas supply of the source gas supply unit 251. The APC valves 211 and 214 are respectively controlled so as to be larger than the exhaust gas flow rate of the cleaning gas of the second exhaust unit 208 away from the port 251a. As a result, the cleaning object in the reaction vessel 203 can be further removed, and when cleaning is performed, the occurrence of over-etching in the reaction vessel 203 is further reduced, and the generation of particles can be further suppressed.

(D) In this embodiment, the first exhaust part 207 and the second exhaust part 208 are provided with valves 212 and 215 for adjusting the exhaust time, respectively. Further, when supplying the cleaning gas into the reaction vessel 203, the exhaust time of the cleaning gas of the first exhaust unit 207 near the source gas supply port 251 a of the source gas supply unit 251 is the source gas supply of the source gas supply unit 251. The opening times of the valves 212 and 215 are controlled so as to be longer than the exhaust time of the cleaning gas of the second exhaust unit 208 away from the port 251a. As a result, the cleaning object in the reaction vessel 203 can be further removed, and when cleaning is performed, the occurrence of over-etching in the reaction vessel 203 is further reduced, and the generation of particles can be further suppressed.

(E) In the present embodiment, the first exhaust unit 207 is supplied with an inert gas into the first exhaust pipe 210 provided in the first exhaust unit 207, thereby cleaning the first exhaust unit 207. A first exhaust inert gas supply unit 260 for adjusting a gas exhaust load is connected. In addition, the second exhaust unit 208 is supplied with an inert gas into a second exhaust pipe 213 included in the second exhaust unit 208, thereby adjusting the exhaust load of the cleaning gas in the second exhaust unit 208. A second exhaust inert gas supply unit 261 is connected. Further, when supplying the cleaning gas into the reaction vessel 203, the exhaust load of the cleaning gas of the first exhaust unit 207 near the source gas supply port 251 a of the source gas supply unit 251 is the source gas supply of the source gas supply unit 251. From the first and second exhaust inert gas supply units 260 and 261 to the first and second exhaust units 207 so as to be larger than the exhaust load of the cleaning gas of the second exhaust unit 208 away from the position 251a. , 208 is adjusted to the flow rate of the inert gas. As a result, the cleaning object in the reaction vessel 203 can be further removed, and when cleaning is performed, the occurrence of over-etching in the reaction vessel 203 is further reduced, and the generation of particles can be further suppressed.

(F) In the present embodiment, the reaction vessel 203 is provided with a partition plate 205 that partitions the reaction vessel 203 into at least a first processing region 201a and a second processing region 201b. In addition, a first exhaust unit 207 is provided below the susceptor 217 in the first processing region 201a, and a second exhaust unit 208 is provided below the susceptor 217 in the second processing region 201b. Is provided. Accordingly, the first exhaust unit 207 mainly exhausts the space below the susceptor 217 in the first processing region 201a, and the second exhaust unit 208 mainly performs the susceptor in the second processing region 201b. The space below 217 is configured to be exhausted. Therefore, it becomes easier to form a flow of the cleaning gas between the first processing region 201a and the second processing region 201b, so that the cleaning object in the reaction vessel 203 can be further removed and cleaning is performed. The occurrence of over-etching in the reaction vessel 203 can be further reduced, and the generation of particles can be further suppressed.

Hereinafter, the reaction vessel 203 provided in the conventional processing furnace 202a will be described with reference to FIGS. 11 and 12 for reference. As shown in FIGS. 11 and 12, the reaction vessel 203 provided in the conventional processing furnace 202 a is provided with one exhaust part 271 that exhausts the space below the susceptor 217. However, as described above, in the reaction vessel 203, the amount of the cleaning object varies depending on the distance from the source gas supply position, that is, the distance from the source gas supply port 251a. That is, the closer to the source gas supply port 251a, the larger the amount of the cleaning object compared to the region farther from the source gas supply port 251a. When supplying the cleaning gas into the reaction vessel 203 as described above, the flow rate of the cleaning gas is adjusted according to the location where the amount of the cleaning object is the largest. For this reason, in a location where the amount of the cleaning gas target is small, overetching may occur, and the inner wall of the reaction vessel 203 may be etched by the cleaning gas, thereby generating particles.

In particular, when the cleaning gas supply unit 273 and one exhaust unit 271 as shown in FIG. 12A are provided in a region where the amount of the cleaning object in the reaction vessel 203 is small, the cleaning gas supply unit 273 Most of the cleaning gas supplied into the reaction container 203 is exhausted from the exhaust part 271 to the outside of the reaction container 203 before being supplied to the region 220 where the amount of the cleaning object is large. That is, it is difficult for the cleaning gas to be supplied to the region 220 where the amount of the cleaning object is large. For this reason, a large amount of cleaning gas is required to reliably remove the cleaning object in the region 220 where the amount of the cleaning object is large. Therefore, in the region where the amount of the cleaning object in the reaction vessel 203 is small, the amount etched by the cleaning gas increases, and overetching occurs. As a result, the amount of particles generated by cleaning increases.

Further, as shown in FIG. 12B, one exhaust part 271 is provided in a region where the amount of the cleaning object in the reaction container 203 is small, and the cleaning gas supply part 273 is provided in the central part in the reaction container 203. The cleaning gas supplied to the region 220 where the amount of the cleaning object is large as compared to the case shown in FIG. The amount of gas increases. However, even in the case shown in FIG. 12B, the supply amount of the cleaning gas is adjusted according to the cleaning object in the region 220 where the amount of the cleaning object is large, and is uniformly supplied into the reaction vessel 203. Therefore, overetching occurs due to the cleaning gas in the region where the amount of the cleaning object in the reaction vessel 203 is small. As a result, the inner wall and the like of the reaction vessel 203 are etched, and particles are generated in the reaction vessel 203.

On the other hand, according to this embodiment, a plurality of exhaust parts (first exhaust part 207 and second exhaust part 208) are provided in the reaction vessel 203. Then, when supplying the cleaning gas into the reaction vessel 203, the flow of the cleaning gas is formed by adjusting the exhaust gas flow rates of the first exhaust unit 207 and the second exhaust unit 208, respectively. For this reason, this subject can be solved effectively.

<Other Embodiments of the Present Invention>
As mentioned above, although embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, It can change variously in the range which does not deviate from the summary.

In the above-described embodiment, the two exhaust parts of the first exhaust part 207 and the second exhaust part 208 for exhausting the space below the susceptor 217 are provided in the reaction vessel 203. However, the present invention is not limited to this. is not. That is, for example, as shown in FIG. 10, a first exhaust part 207, a second exhaust part 208, and a third exhaust part 226 for exhausting the space below the susceptor 217 into the reaction vessel 203. When the cleaning gas is supplied into the reaction vessel 203, the flow of the cleaning gas may be formed by controlling the exhaust gas flow rates of the first to third exhaust parts 207, 208, and 226, respectively. . Further, four or more exhaust parts may be provided in the reaction vessel 203. This also has the same effect as the above-described embodiment.

In the above-described embodiment, the APC valves 211 and 214 as the flow rate adjusting units for adjusting the exhaust flow rate are provided in the first exhaust unit 207 and the second exhaust unit 208, respectively, but the present invention is not limited thereto. It is not a thing. That is, for example, an APC valve that adjusts the exhaust flow rate to at least the second exhaust unit 208 that is distant from the source gas supply port 251a of the source gas supply unit 251 among the first exhaust unit 207 and the second exhaust unit 208. 214 may be provided.

In the above-described embodiment, the valves 212 and 215 as the on-off valves for adjusting the exhaust time are provided in the first exhaust unit 207 and the second exhaust unit 208, respectively. However, the present invention is not limited to this. Absent. That is, for example, the valve 215 for adjusting the exhaust time to at least the second exhaust unit 208 of the first exhaust unit 207 and the second exhaust unit 208 away from the source gas supply port 251a of the source gas supply unit 251. Should just be provided.

In the above-described embodiment, the first exhaust inert gas supply unit 260 that adjusts the exhaust load of the cleaning gas and the second exhaust unit are respectively provided in the first exhaust unit 207 and the second exhaust unit 208. Although the inert gas supply unit 261 is provided, the present invention is not limited to this. That is, for example, in the first exhaust unit 207 and the second exhaust unit 208, at least the second exhaust unit 208 separated from the source gas supply port 251 a of the source gas supply unit 251 has the inside of the second exhaust unit 208. It is only necessary to provide an exhaust inert gas supply unit for adjusting the exhaust load of the cleaning gas.

In the above-described embodiment, the APC valve 211, the valve 212, and the first exhaust inert gas supply unit 260 are provided in the first exhaust unit 207. However, the present invention is not limited to this. That is, for example, at least one of the APC valve 211, the valve 212, or the first exhaust inert gas supply unit 260 may be provided in the first exhaust unit 207. Similarly, in the above-described embodiment, the APC valve 214, the valve 215, and the second exhaust inert gas supply unit 261 are provided in the second exhaust unit 208, but the present invention is not limited to this. That is, for example, at least one of the APC valve 214, the valve 215, or the second exhaust inert gas supply unit 261 may be provided in the second exhaust unit 208.

In the above-described embodiment, the APC valve 243, the valve 245, and the vacuum pump 246 are provided on the downstream side of the second exhaust pipe 213 provided in the second exhaust unit 208. However, the present invention is not limited to this. That is, for example, the downstream end of the second exhaust pipe 213 provided with the APC valve 214, the valve 215, and the second exhaust inert gas supply unit 261 is connected to the APC valve 211, the valve 212, and the first exhaust inert gas. APC is connected downstream of the valve 212 of the first exhaust pipe 212 provided with the active gas supply unit 260, and is connected to the downstream side of the connection point of the first exhaust pipe 212 with the second exhaust pipe 213. A valve 243, a valve 245, and a vacuum pump 246 may be provided.

In the above-described embodiment, the source gas supply port 251a and the reaction gas supply port 252a are provided in the upper part of the reaction vessel 203. However, the present invention is not limited to this. That is, for example, the source gas supply port 251a and the reaction gas supply port 252a may be provided on the side (side wall) of the reaction vessel 203.

In the above-described embodiment, the partition plate that partitions the processing space in the reaction vessel 203 into a plurality of processing regions is provided, but the present invention is not limited to this. That is, for example, the processing space in the reaction container 203 may be divided into a plurality of processing regions by providing a ceiling member in the upper part in the reaction container 203.

In the above-described embodiment, the processing space in the reaction vessel 203 is divided into the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. However, the present invention is not limited to this. That is, for example, the processing space in the reaction vessel 203 may be divided into three processing regions, a first processing region 201a, a second processing region 201b, and a third processing region. In addition, for example, the processing space in the reaction vessel 203 may not be divided into a plurality of processing regions.

Also, for example, when a plurality of processing regions are formed in the reaction vessel 203, an exhaust part may be provided for each processing region.

In the above-described embodiment, the source gas supply unit 251 is provided above the first processing region 201a and the reaction gas supply unit 252 is provided above the second processing region 201b. However, the present invention is not limited to this. is not. That is, for example, the source gas, the reaction gas, and the inert gas may be ejected from the central portion of the reaction vessel 203 toward each processing region or the purge region and supplied.

In the above-described embodiment, the silicon film and the oxygen-containing gas are used as the processing gas and the SiO film is formed on the wafer 200. However, the present invention is not limited to this. That is, for example, a hafnium oxide film (HfO film) using a hafnium (Hf) -containing gas and an oxygen-containing gas, a zirconium (Zr) -containing gas and an oxygen-containing gas, a titanium (Ti) -containing gas, and an oxygen-containing gas as the processing gas. Alternatively, a high-k film such as zirconium oxide (ZrO film) or titanium oxide film (TiO film) may be formed on the wafer 200. In addition to the oxygen-containing gas, ammonia (NH3) gas, which is a nitrogen (N) -containing gas, or the like may be used as the processing gas to be in a plasma state.

Further, in the above-described embodiment, the carry-in port and the carry-out port for the wafer 200 are individually provided, but the carry-in / out port for the wafer 200 may be used in common.

In the above-described embodiment, the wafer push-up pins 266 are moved up and down to move the wafer 200 to the processing position and the transfer position. However, the wafer 200 is processed by moving the susceptor 217 up and down using the lifting mechanism 268. You may move to a position or a conveyance position.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

According to one aspect of the invention,
A reaction vessel for processing the substrate;
A substrate mounting table provided in the reaction vessel, in which a plurality of substrate mounting units are formed and configured to be rotatable;
A cleaning gas supply unit for supplying a cleaning gas into the reaction vessel;
A plurality of exhaust parts for exhausting a space below the substrate mounting table in the reaction container;
A control unit for controlling at least the substrate mounting table, the cleaning gas supply unit, and the exhaust unit;
The controller is
When supplying the cleaning gas into the reaction vessel, there is provided a substrate processing apparatus that forms a flow of the cleaning gas by adjusting the exhaust gas flow rates of the plurality of the exhaust portions.

Preferably,
A source gas supply unit for supplying source gas into the reaction vessel;
The controller is
When supplying the cleaning gas into the reaction container, the exhaust gas flow rate of the exhaust gas near the source gas supply position of the source gas supply unit among the plurality of exhaust units is the raw material of the source gas supply unit. Each of the plurality of exhaust units is controlled so as to be larger than the exhaust gas flow rate of the cleaning gas in the exhaust unit that is away from the gas supply position.

Also preferably,
Among the plurality of exhaust units, at least the exhaust unit that is separated from the source gas supply position of the source gas supply unit is provided with a flow rate adjusting unit that adjusts an exhaust flow rate,
The controller is
When supplying the cleaning gas into the reaction container, the exhaust flow rate of the cleaning gas in the exhaust unit close to the source gas supply position of the source gas supply unit is separated from the source gas supply position of the source gas supply unit. To be larger than the exhaust gas flow rate of the cleaning gas
The flow rate adjusting unit is controlled.

Also preferably,
Among the plurality of exhaust parts, at least the exhaust part separated from the source gas supply position of the source gas supply part is provided with an on-off valve,
The controller is
When supplying the cleaning gas into the reaction vessel, the exhaust time of the cleaning gas in the exhaust unit close to the source gas supply position of the source gas supply unit is away from the source gas supply position of the source gas supply unit The opening time of the on-off valve is controlled so as to be longer than the exhaust time of the cleaning gas of the part.

Also preferably,
Among the plurality of exhaust parts, at least the exhaust part remote from the source gas supply position of the source gas supply part is connected to an exhaust inert gas supply part that supplies an inert gas into the exhaust part,
The controller is
When supplying the cleaning gas into the reaction container, the exhaust load of the cleaning gas in the exhaust unit close to the source gas supply position of the source gas supply unit is separated from the source gas supply position of the source gas supply unit. An inert gas is supplied into the exhaust part from the exhaust inert gas supply part so as to be smaller than the exhaust load of the cleaning gas of the part.

Also preferably,
The plurality of exhaust parts are provided so as to equally divide a space below the substrate mounting table.

Also preferably,
A partition plate for partitioning the inside of the reaction vessel into a plurality of processing regions is provided in the reaction vessel.

According to another aspect of the invention,
In the reaction vessel for processing the substrate, a cleaning gas is supplied by a cleaning gas supply unit, and the inside of the reaction vessel is cleaned.
In the cleaning step,
The exhaust gas flow rates of the cleaning gas in the plurality of exhaust units for exhausting the space in the reaction container below the substrate mounting table that is configured to be rotatable by forming a plurality of substrate mounting parts provided in the reaction container. By adjusting each, a method of manufacturing a semiconductor device that forms a flow of a cleaning gas is provided.

Preferably,
In the reaction vessel, a source gas is supplied by a source gas supply unit, and the substrate in the reaction vessel is processed.
In the cleaning step,
Among the plurality of exhaust units, the exhaust gas flow rate of the exhaust unit close to the source gas supply position of the source gas supply unit is set to the cleaning gas of the exhaust unit separated from the source gas supply position of the source gas supply unit. Each of the plurality of exhaust units is controlled so as to be larger than the exhaust flow rate.

According to yet another aspect of the invention,
In the reaction vessel for processing the substrate, a cleaning gas is supplied by a cleaning gas supply unit, and the inside of the reaction vessel is cleaned.
In the cleaning step,
The exhaust gas flow rates of the cleaning gas in the plurality of exhaust units for exhausting the space in the reaction container below the substrate mounting table that is configured to be rotatable by forming a plurality of substrate mounting parts provided in the reaction container. Each adjustment provides a substrate processing method for forming a flow of cleaning gas.

200 wafer (substrate)
203 reaction vessel 207 first exhaust part 208 second exhaust part 217 susceptor (substrate mounting table)
221 Controller (control unit)
253, 254 Cleaning gas supply unit

Claims (4)

A reaction vessel for processing the substrate;
A substrate mounting table provided in the reaction vessel, in which a plurality of substrate mounting units are formed and configured to be rotatable;
A cleaning gas supply unit for supplying a cleaning gas into the reaction vessel;
A plurality of exhaust parts for exhausting a space below the substrate mounting table in the reaction container;
A control unit for controlling at least the substrate mounting table, the cleaning gas supply unit, and the exhaust unit;
The controller is
A substrate processing apparatus that forms a flow of cleaning gas by adjusting the exhaust gas flow rates of the plurality of exhaust portions when supplying the cleaning gas into the reaction container. A source gas supply unit for supplying source gas into the reaction vessel;
The controller is
When supplying the cleaning gas into the reaction vessel, the exhaust gas flow rate of the exhaust gas near the source gas supply position of the source gas supply unit among the plurality of exhaust units is the raw material of the source gas supply unit. 2. The substrate processing apparatus according to claim 1, wherein each of the plurality of exhaust units is controlled so as to be larger than an exhaust flow rate of the cleaning gas of the exhaust unit remote from the gas supply position. In the reaction vessel for processing the substrate, a cleaning gas is supplied by a cleaning gas supply unit, and the inside of the reaction vessel is cleaned.
In the cleaning step,
The exhaust gas flow rates of the cleaning gas in the plurality of exhaust units for exhausting the space in the reaction container below the substrate mounting table that is configured to be rotatable by forming a plurality of substrate mounting parts provided in the reaction container. A method of manufacturing a semiconductor device in which a flow of a cleaning gas is formed by adjusting each. In the reaction vessel for processing the substrate, a cleaning gas is supplied by a cleaning gas supply unit, and the inside of the reaction vessel is cleaned.
In the cleaning step,
The exhaust gas flow rates of the cleaning gas in the plurality of exhaust units for exhausting the space in the reaction container below the substrate mounting table that is configured to be rotatable by forming a plurality of substrate mounting parts provided in the reaction container. A substrate processing method for forming a flow of a cleaning gas by adjusting each.

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