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WO2013034486A1 - Composant optoélectronique - Google Patents

Composant optoélectronique Download PDF

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Publication number
WO2013034486A1
WO2013034486A1 PCT/EP2012/066901 EP2012066901W WO2013034486A1 WO 2013034486 A1 WO2013034486 A1 WO 2013034486A1 EP 2012066901 W EP2012066901 W EP 2012066901W WO 2013034486 A1 WO2013034486 A1 WO 2013034486A1
Authority
WO
WIPO (PCT)
Prior art keywords
quantum well
layer
well structure
optoelectronic component
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2012/066901
Other languages
German (de)
English (en)
Inventor
Simeon Katz
Bastian Galler
Martin Strassburg
Matthias Sabathil
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2013034486A1 publication Critical patent/WO2013034486A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Definitions

  • the invention relates to an optoelectronic component which has an active layer with a quantum well structure comprising nitride compound semiconductor materials, in particular InGaN.
  • This patent application claims the priority of German Patent Application 10 2011 112 713.9, the disclosure of which is hereby incorporated by reference.
  • Quantum well structures of nitride compound semiconductors which in particular have InGaN, are frequently considered active
  • Composition of the semiconductor material is also one
  • the short-wave radiation can be converted to longer wavelengths. In this way it is possible to produce mixed-color light, in particular white light.
  • Nitride compound semiconductors based LEDs are therefore more significant for LED lighting systems
  • the invention is based on the object
  • Quantum well structure at least one barrier layer off
  • the at least one barrier layer has due to the lower Indiumanteils a larger electronic band gap than the at least one quantum well layer.
  • In the quantum well structure is still at least one
  • the phonon spectrum can in particular by a variation of the indium content x of the material Ali_ x I n x N the
  • Intermediate layer can be influenced. Preferably applies
  • the indium content x is the
  • Intermediate layer 0.09 -S x -S 0.27 It has been found that especially in this range of indium content, the LO phoneme modes are greatly reduced.
  • the at least one intermediate layer of Ali_ x I n x N with x ⁇ 0.09 ⁇ 0.27 phonon-assisted recombination in the quantum well structure may therefore be particularly effectively reduced.
  • x 0.18.
  • the intermediate layer has a thickness of less than 1 nm. In this way, it is advantageously possible to change the phonon spectrum in the area of the quantum well structure in such a way that nonradiative recombinations are reduced, wherein
  • Quantum well layer arranged.
  • the interlayer may be interposed at the interface at each of the interfaces
  • Barrier layer follows.
  • the intermediate layer it is also possible for the intermediate layer to be inserted in each case at the interface at which a barrier layer follows a quantum well layer in the direction of growth.
  • the indium content x of the at least one intermediate layer is preferably set such that the electronic
  • Band gap of an adjacent barrier layer is.
  • the indium content x of the at least one intermediate layer is set such that the electronic band gap of the intermediate layer is equal to the electronic band gap of an adjacent one
  • Quantum well layer is.
  • Barrier layer or the quantum well layer is advantageously achieved that the at least one intermediate layer only slightly affects the electrical properties of the quantum well structure.
  • Embodiment of a multiple quantum well structure having multiple periods of three layers each, wherein the three layers are the barrier layer, the intermediate layer, and the quantum well layer.
  • the three layers are the barrier layer, the intermediate layer, and the quantum well layer.
  • Quantum well structure of a multiple quantum well structure having multiple periods of four layers, wherein the four layers are the intermediate layer, the barrier layer, another intermediate layer and the quantum well layer.
  • the barrier layer is surrounded on both sides by the intermediate layers.
  • Interlayer has the same properties and
  • the quantum well structure is a multiple quantum well structure, in which the
  • Period length is not equal to the second period length.
  • the intermediate layers are therefore not arranged in each case exactly at an interface between the barrier layer and the quantum well layer, but are distributed in the quantum well structure with a second period length, which is not equal to the first period length of the quantum well structure.
  • the second period length is not equal to the first period length of the quantum well structure.
  • the first period length i. the period length of
  • Quantum well structure preferably between
  • Quantum well structure is preferably between 1 nm and 3 nm.
  • Quantum well structure preferably has a thickness between 2 nm and 4 nm.
  • Figure 1 is a schematic representation of a cross section through an optoelectronic device according to a first embodiment
  • Figure 2 is a schematic representation of a cross section through an optoelectronic device according to a second embodiment
  • Figure 3 is a schematic representation of a cross section through an optoelectronic device according to a third embodiment.
  • Identical or equivalent components are each provided with the same reference numerals in the figures.
  • Embodiment of an optoelectronic component 11 is an LED having a radiation-emitting active layer 5.
  • the active layer 5 is between a first semiconductor region 6 and a second
  • the semiconductor region 7 is arranged.
  • the first semiconductor region 6 and the second semiconductor region 7 have a different conductivity type.
  • the first semiconductor region 6 and the second semiconductor region 7 have a different conductivity type.
  • Semiconductor region 7 be p-doped.
  • Semiconductor region 6 and the second semiconductor region 7 may each be composed of a plurality of semiconductor layers, which are not shown individually for the sake of simplicity of illustration.
  • the semiconductor layers of the first semiconductor region 6, the active layer 5 and the second semiconductor region 7 are epitaxially grown on a substrate 8, for example.
  • the surface of the second semiconductor region 7 opposite the substrate 8 serves as the radiation exit surface of the LED.
  • a first electrical contact 9 at the back of the substrate 8 and a second electrical contact 10 are provided on the surface of the second semiconductor region 7.
  • the optoelectronic component 11 does not have to
  • optoelectronic component 11 may alternatively be a so-called thin-film LED, in which the growth substrate 8 used to grow the semiconductor layer sequence has been detached from the semiconductor layer sequence and the
  • the Growth substrate opposite side has been connected to a carrier.
  • the first semiconductor region 6 facing the carrier is as a rule p-doped and the second semiconductor region 7 facing the radiation exit surface is n-doped.
  • the semiconductor layer sequence 5, 6, 7 of the optoelectronic component 11 is based on a nitride compound semiconductor. "On a nitride compound semiconductor
  • the semiconductor layer sequence or at least one layer thereof comprises a III-nitride compound semiconductor material, preferably In x Al y Ga x - includes y N, where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1 and x + y ⁇ 1.
  • This material does not necessarily have a
  • the above formula includes only the essential components of the crystal lattice (In, Al, Ga, N), even though these may be partially replaced by small amounts of other substances.
  • the active layer 5 of the optoelectronic component 11 is a quantum well structure.
  • the quantum well structure 5 includes quantum well layers 1 made of In z Ga z N, where 0 ⁇ z ⁇ 1 and barrier layers 2 of In y Ga y N with 0 -S y ⁇ 1, where z> y holds.
  • 0 ⁇ z ⁇ 0.4 and 0 -S y ⁇ 0.4 Preferably, 0 ⁇ z ⁇ 0.4 and 0 -S y ⁇ 0.4.
  • the quantum well layers 1 have a greater indium content than the barrier layers 2, so that the
  • Quantum well layers 1 have a smaller electronic band gap than the barrier layers 2.
  • the quantum well layers 1 Ino, 2Gao, sN and the barrier layers 2 GaN may have.
  • Quantum well layers 1 have, for example, a thickness between 2 nm and 4 nm.
  • the thickness of the barrier layers 2 is for example between 1 nm and 3 nm.
  • the intermediate layer 3 contains Ali_ x In x N, where preferably 0 ⁇ x ⁇ 0.35.
  • the thickness of the intermediate layer 3 is preferably less than 1.5 nm, more preferably less than 1 nm.
  • the quantum well structure 5 is the
  • the quantum well structure 5 may alternatively have a different number of periods, for example between one and ten. In particular, it is possible that the
  • Quantum well structure 5 is a single quantum well structure with only one period. Preferably, the number of
  • the intermediate layers 3 are respectively arranged in the growth direction of the semiconductor layer sequence at the interface at which a barrier layer 2 follows a quantum well layer 1.
  • the intermediate layers 3 are respectively at the interface, at the one in the growth direction
  • Quantum well layer 1 follows a barrier layer 2.
  • the active layer of the optoelectronic component 11 is intended for the emission of radiation, in particular in the ultraviolet, blue or green spectral range.
  • the quantum well layers 1 and the barrier layers 2 advantageously increases the efficiency of the radiation generation. This is in particular due to the fact that non-radiative recombinations of charge carriers in the quantum well structure 5, which are phonon assisted Auger recombinations, are reduced. In particular, it has been found that the state density of the LO-phonons is decreased in the quantum well structure 5 by inserting the intermediate layers 3 Ali_ x In x N. This advantageous effect is particularly pronounced when the indium content x of the intermediate layers 3 is between
  • the intermediate layers Alo, 8 2 lno, i sN including 0.09 and 0.27 inclusive.
  • the insertion of the intermediate layers 3 increases the quantum efficiency of the quantum well structure 5 when the optoelectronic component 11 is high
  • the lattice constant of the intermediate layers 3 can be varied by a change in the indium content x, so that a lattice matching to an adjacent quantum well layer 1 or the adjacent barrier layer 2 can be achieved.
  • a suitable adjustment of the indium content x the indium content x
  • Interlayers 3 may alternatively or additionally
  • the electronic band gap of the intermediate layer 3 is adapted to an adjacent barrier layer 2 or quantum well layer 1.
  • Quantum well layers 1 and barrier layers 2 each an intermediate layer 3 is arranged.
  • each period 4 of the quantum well structure 5 consists of a first one
  • Interlayer 3 the quantum well layer 1, a further intermediate layer 3 and the barrier layer 2.
  • Intermediate layers 3 advantageously each have a thickness of less than 1 nm. Otherwise, the advantageous embodiments of the intermediate layers 3, the quantum well layer 1 and the barrier layer 2 and of the optoelectronic component 11 correspond to the first one
  • Quantum well layers 1 and the barrier layers 2 are Quantum well layers 1 and the barrier layers 2
  • the intermediate layers 3 are embedded in the quantum well structure 5 in a periodic sequence, the period length d2 of the arrangement of the intermediate layers 3 not corresponding to the period length di of the quantum well structure 5.
  • Barrier layers 2 a first period length di and the Sequence of intermediate layers 3 has a second period length d2, where di is d2.
  • the intermediate layers 3 are not necessarily arranged at an interface between a quantum well layer 1 and a barrier layer 2, respectively. Rather, the intermediate layers 3 may also be embedded in a quantum well layer 1 or a barrier layer 2. In this case, the intermediate layer 3 is thus composed of a first part-layer and a second part-layer
  • each quantum well layer 1 or barrier layer 2 surrounded.
  • the first quantum well layer 1 of the lowest-order period 4 has a first one
  • Partial layer la and a second sub-layer lb wherein an intermediate layer 3 between the first sub-layer la and the second sub-layer lb is arranged. Furthermore, one or even two intermediate layers are embedded in some of the further quantum well layers 1 and barrier layers 2. The highest in the growth direction period 4 of
  • quantum well structure 5 has one
  • Barrier layer 2 which has a first sub-layer 2a and a second sub-layer 2b, wherein an intermediate layer 3 between the first sub-layer 2a and the second
  • Partial layer 2b is arranged.
  • the intermediate layers 3 are arranged at an interface between a quantum well layer 1 and a barrier layer 2.
  • the barrier layer 2 adjoins the lowermost period 4 in the growth direction on both sides of an intermediate layer 3.
  • the intermediate layers 3 are advantageously comparatively thin in this embodiment.
  • the thickness of the intermediate layers 3 is preferably less than 1 nm, particularly preferably less than 0.5 nm.
  • the period length d 2 of the intermediate layers 3 is
  • the period length d 2 of the intermediate layers 3 is smaller than the period length di of the multiple quantum well structure 5. In this way it is ensured that in each period 4 of the quantum well structure 5 at least one intermediate layer 3 is embedded.
  • the period of the quantum well structure 5 may be, for example, between 4 nm and 10 nm.
  • the indium content x of the intermediate layers 3 is in each case adjusted such that the electronic band gap of the intermediate layer 3 is adapted to the material of the quantum well layer 1 or the barrier layer 2, in which the respective intermediate layer 3 is embedded.
  • the indium content x of the intermediate layer 3 is preferably set such that the electronic band gap of the intermediate layer 3 is either the adjacent quantum well layer 1 or the adjacent one
  • Interlayers 3 are not significantly affected. In this way, it is advantageously achieved that unwanted phonons in the semiconductor material, which could reduce the efficiency of the optoelectronic component 11 by non-radiative recombinations are reduced, wherein At the same time, however, the other electronic and optical properties of the optoelectronic component 11 are only insignificantly changed.
  • the invention is not limited by the description with reference to the embodiments. Rather, the includes

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  • Led Devices (AREA)

Abstract

Composant optoélectronique (11) qui comporte une couche active à structure à puits quantique (5), ladite structure (5) comprenant au moins une couche barrière (2) en InyGa1-yN, y répondant à la formule 0 ≤ y < 1, et au moins une couche à puits quantique (1) en InzGa1-zN, z répondant à la formule 0 ≤ z < 1 et z étant supérieur à y. La structure à puits quantique (5) comporte au moins une couche intermédiaire (3) en Al1-xInxN, x répondant à la formule 0 ≤ x ≤ 0,6 , qui présente une épaisseur inférieure à 1,5 nm.
PCT/EP2012/066901 2011-09-07 2012-08-30 Composant optoélectronique Ceased WO2013034486A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011112713.9 2011-09-07
DE102011112713A DE102011112713A1 (de) 2011-09-07 2011-09-07 Optoelektronisches Bauelement

Publications (1)

Publication Number Publication Date
WO2013034486A1 true WO2013034486A1 (fr) 2013-03-14

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PCT/EP2012/066901 Ceased WO2013034486A1 (fr) 2011-09-07 2012-08-30 Composant optoélectronique

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DE (1) DE102011112713A1 (fr)
TW (1) TW201318203A (fr)
WO (1) WO2013034486A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015114478A1 (de) 2015-08-31 2017-03-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
CN113451460B (zh) * 2020-11-20 2022-07-22 重庆康佳光电技术研究院有限公司 发光器件及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110147702A1 (en) * 2009-12-16 2011-06-23 Lehigh University Nitride based quantum well light-emitting devices having improved current injection efficiency

Family Cites Families (3)

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Publication number Priority date Publication date Assignee Title
JP2005302784A (ja) * 2004-04-06 2005-10-27 Matsushita Electric Ind Co Ltd 半導体発光素子及びその製造方法
KR100670531B1 (ko) * 2004-08-26 2007-01-16 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
US8084763B2 (en) * 2008-10-31 2011-12-27 The Regents Of The University Of California Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
US20110147702A1 (en) * 2009-12-16 2011-06-23 Lehigh University Nitride based quantum well light-emitting devices having improved current injection efficiency

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KIOUPAKIS ET AL.: "Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes", APPLIED PHYSICS LETTERS, vol. 98, 2011, pages 161107, XP012140356, DOI: doi:10.1063/1.3570656
MENG ZHANG ET AL: "High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (lamda=495nm)", JOURNAL OF CRYSTAL GROWTH, vol. 323, no. 1, 21 December 2010 (2010-12-21), pages 470 - 472, XP028385416, ISSN: 0022-0248, DOI: 10.1016/J.JCRYSGRO.2010.12.038 *

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TW201318203A (zh) 2013-05-01
DE102011112713A1 (de) 2013-03-07

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