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WO2013016619A1 - Système de régulation d'énergie d'ions pour systèmes de traitement d'énergie plasma avancés - Google Patents

Système de régulation d'énergie d'ions pour systèmes de traitement d'énergie plasma avancés Download PDF

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Publication number
WO2013016619A1
WO2013016619A1 PCT/US2012/048504 US2012048504W WO2013016619A1 WO 2013016619 A1 WO2013016619 A1 WO 2013016619A1 US 2012048504 W US2012048504 W US 2012048504W WO 2013016619 A1 WO2013016619 A1 WO 2013016619A1
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Prior art keywords
substrate
ion
plasma
power supply
waveform
Prior art date
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Application number
PCT/US2012/048504
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English (en)
Inventor
Victor Brouk
Daniel J. Hoffman
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Advanced Energy Industries Inc
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Advanced Energy Industries Inc
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Application filed by Advanced Energy Industries Inc filed Critical Advanced Energy Industries Inc
Priority to CN201280047162.XA priority Critical patent/CN103890897B/zh
Priority to JP2014523057A priority patent/JP5894275B2/ja
Priority to KR1020147004544A priority patent/KR101667462B1/ko
Publication of WO2013016619A1 publication Critical patent/WO2013016619A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

Definitions

  • TITLE ION ENERGY CONTROL SYSTEM FOR ADVANCED PLASMA
  • the present disclosure relates generally to plasma processing.
  • the present invention relates to methods and apparatuses for plasma-assisted etching and/or deposition.
  • the substrate is a dielectric, however, a non-varying voltage is ineffective to place a voltage across the surface of the substrate.
  • an AC voltage e.g., high frequency
  • the conductive plate or chuck
  • the AC field induces a voltage on the surface of the substrate.
  • the substrate attracts electrons, which are light relative to the mass of the positive ions; thus many electrons will be attracted to the surface of the substrate during the positive part of the cycle.
  • the surface of the substrate will be charged negatively, which causes ions to be attracted toward the negatively-charged surface.
  • the invention may be characterized as a system for plasma-based processing.
  • the system in this embodiment includes a plasma processing chamber configured to contain a plasma and a substrate support positioned within the plasma processing chamber that is disposed to support a substrate.
  • an ion- energy control portion provides at least one ion-energy control signal responsive to at least one ion-energy distribution setting that is indicative of a desired ion energy distribution at the surface of the substrate.
  • a switch-mode power supply applies power to the substrate to effectuate the desired ion energy distribution at the surface of the substrate, and an ion current compensation component in this embodiment provides a controllable width of the ion energy distribution.
  • the invention may be described as a method for plasma-based processing that includes controllably switching power to the substrate so as to apply a periodic voltage function to the substrate and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired ion energy distribution at the surface of the substrate so as to effectuate the desired ion energy distribution on a time-averaged basis.
  • the invention may be characterized as a plasma-based processing apparatus that includes a switch-mode power supply configured to apply a periodic voltage function and an ion-energy control portion that modulates, over multiple cycles of the periodic voltage function, at least one parameter of the periodic voltage function responsive to at least one ion-energy distribution setting that is indicative of a desired ion energy distribution at the surface of the substrate.
  • FIG. 1 illustrates a block diagram of a plasma processing system in accordance with one implementation of the present invention
  • FIG. 2 is a block diagram depicting an exemplary embodiment of the switch- mode power system depicted in FIG. 1;
  • FIG. 3 is a schematic representation of components that may be utilized to realize the switch-mode bias supply described with reference to FIG. 2;
  • FIG. 4 is a timing diagram depicting two drive signal waveforms
  • FIG. 5 is a graphical representation of a single mode of operating the switch mode bias supply, which effectuates an ion energy distribution that is concentrated at a particular ion energy;
  • FIG. 6 are graphs depicting a bi-modal mode of operation in which two separate peaks in ion energy distribution are generated
  • FIGS. 7 A and 7B are is are graphs depicting actual, direct ion energy
  • FIG. 8 is a block diagram depicting another embodiment of the present invention.
  • FIG. 9A is a graph depicting an exemplary periodic voltage function that is modulated by a sinusoidal modulating function
  • FIG. 9B is an exploded view of a portion of the periodic voltage function that is depicted in FIG. 9A;
  • FIG. 9C depicts the resulting distribution of ion energies, on time-averaged basis, that results from the sinusoidal modulation of the periodic voltage function
  • FIG. 9D depicts actual, direct, ion energy measurements made in a plasma of a resultant, time averaged, IEDF when a periodic voltage function is modulated by a sinusoidal modulating function
  • FIG. 10A depicts a periodic voltage function is modulated by a sawtooth modulating function
  • FIG. 10B is an exploded view of a portion of the periodic voltage function that is depicted in FIG. 10A;
  • FIG. IOC is a graph depicting the resulting distribution of ion energies, on a time averaged basis, that results from the sinusoidal modulation of the periodic voltage function in FIGS. 10A and 10B;
  • FIG. 11 are graphs showing IEDF functions in the right column and associated modulating functions in the left column;
  • FIG. 12 is a block diagram depicting an embodiment in which an ion current compensation component compensates for ion current in a plasma chamber
  • FIG. 13 is a diagram depicting an exemplary ion current compensation component
  • FIG. 14 is a graph depicting an exemplary voltage at node Vo depicted in FIG.
  • FIGS. 15A-15C are voltage waveforms as appearing at the surface of the substrate or wafer responsive to compensation current
  • FIG. 16 is an exemplary embodiment of a current source, which may be implemented to realize the current source described with reference to FIG. 13;
  • FIGS. 17A and 17B are block diagrams depicting other embodiments of the present invention.
  • FIG. 18 is a block diagram depicting yet another embodiment of the present invention.
  • FIG. 19 is a block diagram depicting still another embodiment of the present invention.
  • FIG. 20 is a block diagram input parameters and control outputs that may be utilized in connection with the embodiments described with reference to FIGS. 1-19;
  • FIG. 21 is a block diagram depicting yet another embodiment of the present invention.
  • FIG. 22 is a block diagram depicting yet another embodiment of the present invention.
  • FIG. 23 is a block diagram depicting yet another embodiment of the present invention.
  • FIG. 24 is a block diagram depicting yet another embodiment of the present invention.
  • FIG. 25 is a block diagram depicting yet another embodiment of the present invention.
  • FIG. 26 is a block diagram depicting yet another embodiment of the present invention.
  • FIG. 27 is a block diagram depicting yet another embodiment of the present invention.
  • FIG. 28 illustrates a method according to an embodiment of this disclosure
  • FIG. 29 illustrates another method according to an embodiment of this disclosure.
  • FIG. 1 An exemplary embodiment of a plasma processing system is shown generally in FIG. 1.
  • a plasma power supply 102 is coupled to a plasma processing chamber 104 and a switch-mode power supply 106 is coupled to a support 108 upon which a substrate 110 rests within the chamber 104.
  • a controller 112 that is coupled to the switch-mode power supply 106.
  • the plasma processing chamber 104 may be realized by chambers of substantially conventional construction (e.g., including a vacuum enclosure which is evacuated by a pump or pumps (not shown)). And, as one of ordinary skill in the art will appreciate, the plasma excitation in the chamber 104 may be by any one of a variety of sources including, for example, a helicon type plasma source, which includes magnetic coil and antenna to ignite and sustain a plasma 114 in the reactor, and a gas inlet may be provided for introduction of a gas into the chamber 104.
  • a helicon type plasma source which includes magnetic coil and antenna to ignite and sustain a plasma 114 in the reactor
  • a gas inlet may be provided for introduction of a gas into the chamber 104.
  • the exemplary plasma chamber 104 is arranged and configured to carry out plasma-assisted etching of materials utilizing energetic ion bombardment of the substrate 110.
  • the plasma power supply 102 in this embodiment is configured to apply power (e.g., RF power) via a matching network (not shown)) at one or more frequencies (e.g., 13.56 MHz) to the chamber 104 so as to ignite and sustain the plasma 114.
  • RF power e.g., RF power
  • frequencies e.g. 13.56 MHz
  • the present invention is not limited to any particular type of plasma power supply 102 or source to couple power to the chamber 104, and that a variety of frequencies and power levels may be may be capacitively or inductively coupled to the plasma 114.
  • a dielectric substrate 110 to be treated (e.g., a semiconductor wafer), is supported at least in part by a support 108 that may include a portion of a conventional wafer chuck (e.g., for semiconductor wafer processing).
  • the support 108 may be formed to have an insulating layer between the support 108 and the substrate 110 with the substrate 110 being capacitively coupled to the platforms but may float at a different voltage than the support 108.
  • the substrate 110 and support 108 are conductors, it is possible to apply a non-varying voltage to the support 108, and as a consequence of electric conduction through the substrate 110, the voltage that is applied to the support 108 is also applied to the surface of the substrate 110.
  • the exemplary switch-mode power supply 106 is configured to be controlled so as to effectuate a voltage on the surface of the substrate 110 that is capable of attracting ions in the plasma 114 to collide with the substrate 110 so as to carry out a controlled etching and/or deposition of the substrate 110.
  • embodiments of the switch-mode power supply 106 are configured to operate so that there is an insubstantial interaction between the power applied (to the plasma 114) by the plasma power supply 102 and the power that is applied to the substrate 110 by the switch-mode power supply 106.
  • the power applied by the switch-mode power supply 106 is controllable so as to enable control of ion energy without substantially affecting the density of the plasma 114.
  • many embodiments of the exemplary switch-mode supply 106 depicted in FIG. 1 are realized by relatively inexpensive components that may be controlled by relatively simple control algorithms. And as compared to prior art approaches, many embodiments of the switch mode power supply 106 are much more efficient; thus reducing energy costs and expensive materials that are associated with removing excess thermal energy.
  • One known technique for applying a voltage to a dielectric substrate utilizes a high-power linear amplifier in connection with complicated control schemes to apply power to a substrate support, which induces a voltage at the surface of the substrate.
  • This technique has not been adopted by commercial entities because it has not proven to be cost effective nor sufficiently manageable.
  • the linear amplifier that is utilized is typically large, very expensive, inefficient, and difficult to control.
  • linear amplifiers intrinsically require AC coupling (e.g., a blocking capacitor) and auxiliary functions like chucking are achieved with a parallel feed circuit which harms AC spectrum purity of the system for sources with a chuck.
  • Another technique that has been considered is to apply high frequency power (e.g., with one or more linear amplifiers) to the substrate.
  • This technique has been found to adversely affect the plasma density because the high frequency power that is applied to the substrate affects the plasma density.
  • the switch-mode power supply 106 depicted in FIG. 1 may be realized by buck, boost, and/or buck-boost type power technologies. In these embodiments, the switch-mode power supply 106 may be controlled to apply varying levels of pulsed power to induce a potential on the surface of the substrate 110.
  • the switch-mode power supply 106 is realized by other more sophisticated switch mode power and control technologies.
  • the switch-mode power supply described with reference to FIG. 1 is realized by a switch-mode bias supply 206 that is utilized to apply power to the substrate 110 to effectuate one or more desired energies of the ions that bombard the substrate 110.
  • a switch-mode bias supply 206 that is utilized to apply power to the substrate 110 to effectuate one or more desired energies of the ions that bombard the substrate 110.
  • an ion energy control component 220, an arc detection component 222, and a controller 212 that is coupled to both the switch-mode bias supply 206 and a waveform memory 224.
  • the controller 212 which may be realized by hardware, software, firmware, or a combination thereof, may be utilized to control both the power supply 202 and switch-mode bias supply 206.
  • the power supply 202 and the switch-mode bias supply 206 are realized by completely separated functional units.
  • the controller 212, waveform memory 224, ion energy control portion 220 and the switch-mode bias supply 206 may be integrated into a single component (e.g., residing in a common housing) or may be distributed among discrete components.
  • the switch-mode bias supply 206 in this embodiment is generally configured to apply a voltage to the support 208 in a controllable manner so as to effectuate a desired distribution of the energies of ions bombarding the surface of the substrate. More specifically, the switch-mode bias supply 206 is configured to effectuate the desired distribution of ion energies by applying one or more particular waveforms at particular power levels to the substrate. And more particularly, responsive to an input from the ion energy control portion 220, the switch-mode bias supply 206 applies particular power levels to effectuate particular ion energies, and applies the particular power levels using one or more voltage waveforms defined by waveform data in the waveform memory 224. As a consequence, one or more particular ion bombardment energies may be selected with the ion control portion to carry out controlled etching of the substrate.
  • the switch-mode power supply 206 includes switch components 226', 226" (e.g., high power field effect transistors) that are adapted to switch power to the support 208 of the substrate 210 responsive to drive signals from corresponding drive components 228', 228". And the drive signals 230', 230" that are generated by the drive components 228', 228" are controlled by the controller 212 based upon timing that is defined by the content of the waveform memory 224.
  • switch components 226', 226" e.g., high power field effect transistors
  • the controller 212 in many embodiments is adapted to interpret the content of the waveform memory and generate drive-control signals 232', 232", which are utilized by the drive components 228', 228" to control the drive signals 230', 230" to the switching components 226', 226" .
  • drive-control signals 232', 232" which are utilized by the drive components 228', 228" to control the drive signals 230', 230" to the switching components 226', 226" .
  • two switch components 226', 226" which may be arranged in a half- bridge configuration, are depicted for exemplary purposes, it is certainly contemplated that fewer or additional switch components may be implemented in a variety of architectures (e.g., an H-bridge configuration).
  • the controller 212 modulates the timing of the drive-control signals 232', 232" to effectuate a desired waveform at the support 208 of the substrate 210.
  • the switch mode bias supply 206 is adapted to supply power to the substrate 210 based upon an ion-energy control signal 234, which may be a DC signal or a time-varying waveform.
  • an ion-energy control signal 234 which may be a DC signal or a time-varying waveform.
  • the controller 212 in this embodiment is configured, responsive to an arc in the plasma chamber 204 being detected by the arc detection component 222, to carry out arc management functions.
  • the controller 212 alters the drive-control signals 232', 232" so that the waveform applied at the output 236 of the switch mode bias supply 206 extinguishes arcs in the plasma 214.
  • the controller 212 extinguishes arcs by simply interrupting the application of drive-control signals 232', 232" so that the application of power at the output 236 of the switch-mode bias supply 206 is interrupted.
  • FIG. 3 it is a schematic representation of components that may be utilized to realize the switch-mode bias supply 206 described with reference to FIG. 2.
  • the switching components Tl and T2 in this embodiment are arranged in a half-bridge (also referred to as or totem pole) type topology.
  • R2, R3, CI, and C2 represent a plasma load
  • C3 is an optional physical capacitor to prevent DC current from the voltage induced on the surface of the substrate or from the voltage of an electrostatic chuck (not shown) from flowing through the circuit.
  • LI is stray inductance (e.g., the natural inductance of the conductor that feeds the power to the load).
  • V2 and V4 represent drive signals (e.g., the drive signals 230', 230"output by the drive components 228', 228" described with reference to FIG. 2), and in this embodiment, V2 and V4 can be timed (e.g., the length of the pulses and/or the mutual delay) so that the closure of Tl and T2 may be modulated to control the shape of the voltage output at Vout, which is applied to the substrate support.
  • the transistors used to realize the switching components Tl and T2 are not ideal switches, so to arrive at a desired waveform, the transistor-specific characteristics are taken into consideration. In many modes of operation, simply changing the timing of V2 and V4 enables a desired waveform to be applied at Vout.
  • the switches Tl, T2 may be operated so that the voltage at the surface of the substrate 110, 210 is generally negative with periodic voltage pulses approaching and/or slightly exceeding a positive voltage reference.
  • the value of the voltage at the surface of the substrate 110, 210 is what defines the energy of the ions, which may be characterized in terms of an ion energy distribution function (IEDF).
  • IEDF ion energy distribution function
  • the pulses at Vout may be generally rectangular and have a width that is long enough to induce a brief positive voltage at the surface of the substrate 110, 210 so as to attract enough electrons to the surface of the substrate 110, 210 in order to achieve the desired voltage(s) and corresponding ion energies.
  • Vbus in this embodiment defines the amplitude of the pulses applied to Vout, which defines the voltage at the surface of the substrate, and as a consequence, the ion energy.
  • Vbus may be coupled to the ion energy control portion, which may be realized by a DC power supply that is adapted to apply a DC signal or a time- varying waveform to Vbus.
  • the pulse width, pulse shape, and/or mutual delay of the two signals V2, V4 may be modulated to arrive at a desired waveform at Vout, and the voltage applied to Vbus may affect the characteristics of the pulses.
  • the voltage Vbus may affect the pulse width, pulse shape and/or the relative phase of the signals V2, V4.
  • FIG. 4 shown is a timing diagram depicting two drive signal waveforms that may be applied to Tl and T2 (as V2 and V4) so as to generate the period voltage function at Vout as depicted in FIG. 4.
  • the timing of the two gate drive signals V2, V4 may be controlled.
  • the two gate drive signals V2, V4 may be applied to the switching components Tl, T2 so the time that each of the pulses is applied at Vout may be short compared to the time T between pulses, but long enough to induce a positive voltage at the surface of the substrate 110, 210 to attract electrons to the surface of the substrate 110, 210.
  • the gate voltage level between the pulses it is possible to control the slope of the voltage that is applied to Vout between the pulses (e.g., to achieve a substantially constant voltage at the surface of the substrate between pulses).
  • the repetition rate of the gate pulses is about 400 kHz, but this rate may certainly vary from application to application.
  • waveforms that may be used to generate the desired ion energy distributions may be defined, and the waveforms can be stored (e.g., in the waveform memory portion described with reference to FIG. 1 as a sequence of voltage levels).
  • the waveforms can be generated directly (e.g., without feedback from Vout); thus avoiding the undesirable aspects of a feedback control system (e.g., settling time).
  • Vbus can be modulated to control the energy of the ions, and the stored waveforms may be used to control the gate drive signals V2, V4 to achieve a desired pulse amplitude at Vout while minimizing the pulse width. Again, this is done in accordance with the particular characteristics of the transistors, which may be modeled or implemented and empirically established. Referring to FIG. 5, for example, shown are graphs depicting Vbus versus time, voltage at the surface of the substrate 110, 210 versus time, and the corresponding ion energy distribution.
  • the graphs in FIG. 5 depict a single mode of operating the switch mode bias supply 106, 206, which effectuates an ion energy distribution that is concentrated at a particular ion energy.
  • the voltage applied at Vbus is maintained constant while the voltages applied to V2 and V4 are controlled (e.g., using the drive signals depicted in FIG. 3) so as to generate pulses at the output of the switch-mode bias supply 106, 206, which effectuates the corresponding ion energy distribution shown in FIG. 5.
  • the potential at the surface of the substrate 110, 210 is generally negative to attract the ions that bombard and etch the surface of the substrate 110, 210.
  • the periodic short pulses that are applied to the substrate 110, 210 (by applying pulses to Vout) have a magnitude defined by the potential that is applied to Vbus, and these pulses cause a brief change in the potential of the substrate 110, 210 (e.g., close to positive or slightly positive potential), which attracts electrons to the surface of the substrate to achieve the generally negative potential along the surface of the substrate 110, 210.
  • the constant voltage applied to Vbus effectuates a single concentration of ion flux at particular ion energy; thus a particular ion bombardment energy may be selected by simply setting Vbus to a particular potential. In other modes of operation, two or more separate concentrations of ion energies may be created.
  • FIG. 6 shown are graphs depicting a bi-modal mode of operation in which two separate peaks in ion energy distribution are generated.
  • the substrate experiences two distinct levels of voltages and periodic pulses, and as a consequence, two separate concentrations of ion energies are created.
  • the voltage that is applied at Vbus alternates between two levels, and each level defines the energy level of the two ion energy concentrations.
  • FIG. 6 depicts the two voltages at the substrate 110, 210 as alternating after every pulse, this is certainly not required.
  • the voltages applied to V2 and V4 are switched (e.g., using the drive signals depicted in FIG. 3) relative to the voltage applied to Vout so that the induced voltage at surface of the substrate alternates from a first voltage to a second voltage (and vice versa) after two or more pulses.
  • FIGS. 7A and 7B shown are graphs depicting actual, direct ion energy measurements made in a plasma corresponding to monoenergetic and dual-level regulation of the DC voltage applied to Vbus, respectively.
  • the ion energy distribution is concentrated around 80 eV responsive to a non-varying application of a voltage to Vbus (e.g., as depicted in FIG. 5).
  • two separate concentrations of ion energies are present at around 85 eV and 115 eV responsive to a dual-level regulation of Vbus (e.g., as depicted in FIG. 6).
  • FIG. 8 shown is a block diagram depicting another embodiment of the present invention.
  • a switch-mode power supply 806 is coupled to a controller 812, an ion-energy control component 820, and a substrate support 808 via an arc detection component 822.
  • the controller 812, switch-mode supply 806, and ion energy control component 820 collectively operate to apply power to the substrate support 808 so as to effectuate, on a time-averaged basis, a desired ion energy distribution at the surface of the substrate 810.
  • FIG. 9A shown is a periodic voltage function with a frequency of about 400 kHz that is modulated by a sinusoidal modulating function of about 5 kHz over multiple cycles of the periodic voltage function.
  • FIG. 9B is an exploded view of the portion of the periodic voltage function that is circled in FIG. 9A
  • FIG. 9C depicts the resulting distribution of ion energies, on a time-averaged basis, that results from the sinusoidal modulation of the periodic voltage function.
  • FIG. 9D depicts actual, direct, ion energy measurements made in a plasma of a resultant, time- averaged, IEDF when a periodic voltage function is modulated by a sinusoidal modulating function.
  • achieving a desired ion energy distribution, on a time-averaged basis may be achieved by simply changing the modulating function that is applied to the periodic voltage.
  • a 400 kHz periodic voltage function is modulated by a sawtooth modulating function of approximately 5 kHz to arrive at the distribution of ion energies depicted in FIG. IOC on a time-averaged basis.
  • the periodic voltage function utilized in connection with FIG. 10 is the same as in FIG. 9, except that the periodic voltage function in FIG. 10 is modulated by a sawtooth function instead of a sinusoidal function.
  • the ion energy distribution functions depicted in FIGS. 9C and IOC do not represent an instantaneous distribution of ion energies at the surface of the substrate 810, but instead represent the time average of the ion energies.
  • the distribution of ion energies will be a subset of the depicted distribution of ion energies that exist over the course of a full cycle of the modulating function.
  • the modulating function need not be a fixed function nor need it be a fixed frequency. In some instances for example, it may be desirable to modulate the periodic voltage function with one or more cycles of a particular modulating function to effectuate a particular, time-averaged ion energy distribution, and then modulate the periodic voltage function with one or more cycles of another modulating function to effectuate another, time-averaged ion energy distribution. Such changes to the modulating function (which modulates the periodic voltage function) may be beneficial in many instances.
  • a first modulating function may be used, and then another modulating function may subsequently be used to effectuate a different etch geometry or to etch through another material.
  • the periodic voltage function (e.g., the 400 kHz components in FIGS. 9A, 9B, 10A, and 10B and Vout in FIG. 4) need not be rigidly fixed (e.g., the shape and frequency of the periodic voltage function may vary), but generally its frequency is established by the transit time of ions within the chamber so that ions in the chamber are affected by the voltage that is applied to the substrate 810.
  • the controller 812 provides drive-control signals 832', 832" to the switch-mode supply 806 so that the switch-mode supply 806 generates a periodic voltage function.
  • the switch mode supply 806 may be realized by the components depicted in FIG. 3 (e.g., to create a periodic voltage function depicted in FIG. 4), but it is certainly contemplated that other switching architectures may be utilized.
  • the ion energy control component 820 functions to apply a modulating function to the periodic voltage function (that is generated by the controller 812 in connection with the switch mode power supply 806).
  • the ion energy control component 820 includes a modulation controller 840 that is in communication with a custom IEDF portion 850, an IEDF function memory 848, a user interface 846, and a power component 844. It should be recognized that the depiction of these components is intended to convey functional components, which in reality, may be effectuated by common or disparate components.
  • the modulation controller 840 in this embodiment generally controls the power component 844 (and hence its output 834) based upon data that defines a modulation function, and the power component 844 generates the modulation function 834 (based upon a control signal 842 from the modulation controller 840) that is applied to the periodic voltage function that is generated by the switch-mode supply 806.
  • the user interface 846 in this embodiment is configured to enable a user to select a predefined IEDF function that is stored in the IEDF function memory 848, or in connection with the custom IEDF component 850, define a custom IEDF
  • the power component 844 includes a DC power supply (e.g., a DC switch mode power supply or a linear amplifier), which applies the modulating function (e.g. a varying DC voltage) to the switch mode power supply (e.g., to Vbus of the switch mode power supply depicted in FIG. 3).
  • the modulation controller 840 controls the voltage level that is output by the power component 844 so that the power component 844 applies a voltage that conforms to the modulating function.
  • the IEDF function memory 848 includes a plurality of data sets that correspond to each of a plurality of IEDF distribution functions, and the user interface 846 enables a user to select a desired IEDF function.
  • FIG. 11 shown in the right column are exemplary IEDF functions that may be available for a user to select.
  • the left column depicts the associated modulating function that the modulation controller 840 in connection with the power component 844 would apply to the periodic voltage function to effectuate the corresponding IEDF function. It should be recognized that the IEDF functions depicted in FIG. 11 are only exemplary and that other IEDF functions may be available for selection.
  • the custom IEDF component 850 generally functions to enable a user, via the user interface 846, to define a desired ion energy distribution function.
  • the custom IEDF component 850 enables a user to establish values for particular parameters that define a distribution of ion energies.
  • the custom IEDF component 850 may enable IEDF functions to be defined in terms of a relative level of flux (e.g., in terms of a percentage of flux) at a high-level (IF-high), a mid- level (IF-mid), and a low level (IF-low) in connection with a function(s) that defines the IEDF between these energy levels.
  • IF-high high-level
  • IF-mid mid- level
  • IF-low low level
  • IEDF function between these levels is sufficient to define an IEDF function.
  • a user may request 1200 eV at a 20% contribution level (contribution to the overall IEDF), 700 eV at a 30 % contribution level with a sinusoid IEDF between these two levels.
  • the custom IEDF portion 850 may enable a user to populate a table with a listing of one or more (e.g., multiple) energy levels and the corresponding percentage contribution of each energy level to the IEDF.
  • the custom IEDF component 850 in connection with the user interface 846 enables a user to graphically generate a desired IEDF by presenting the user with a graphical tool that enables a user to draw a desired IEDF.
  • the IEDF function memory 848 and the custom IEDF component 850 may interoperate to enable a user to select a predefined IEDF function and then alter the predefined IEDF function so as to produce a custom IEDF function that is derived from the predefined IEDF function.
  • the modulation controller 840 translates data that defines the desired IEDF function into a control signal 842, which controls the power component 844 so that the power component 844 effectuates the modulation function that corresponds to the desired IEDF.
  • the control signal 842 controls the power component 844 so that the power component 844 outputs a voltage that is defined by the modulating function.
  • FIG. 12 it is a block diagram depicting an embodiment in which an ion current compensation component 1260 compensates for ion current in the plasma chamber 1204.
  • FIGS. 15A- 15C shown are voltage waveforms as they appear at the surface of the substrate 1210 or wafer and their relationship to IEDF.
  • FIG. 15A depicts a periodic voltage function at the surface of the substrate 1210 when ion current 3 ⁇ 4 is equal to compensation current Ic;
  • FIG. 15B depicts the voltage waveform at the surface of the substrate 1210 when ion current Ii is greater than the compensation current Ic;
  • FIG. 15C depicts the voltage waveform at the surface of the substrate when ion current is less than the compensation current Ic.
  • the ion current compensation component 1260 enables a narrow spread of ion energies when the ion current is high (e.g., by compensating for effects of ion current), and it also enables a width of the spread 1572, 1574 of uniform ion energy to be controlled (e.g., when it is desirable to have a spread of ion energies).
  • the ion compensation component 1260 may be realized as a separate accessory that may optionally be added to the switch mode power supply 1206 and controller 1212.
  • the ion current compensation component 1260 may share a common housing 1366 with other components described herein (e.g., the switch-mode power supply 106, 206, 806, 1206 and ion energy control 220, 820 components).
  • an exemplary ion current compensation component 1360 that includes a current source 1364 coupled to an output 1336 of a switch mode supply and a current controller 1362 that is coupled to both the current source 1364 and the output 1336.
  • a plasma chamber 1304 Also depicted in FIG. 13 is a plasma chamber 1304, and within the plasma chamber are capacitive elements C l5 C 2 , and ion current I L
  • Q represents the inherent capacitance of components associated with the chamber 1304, which may include insulation, the substrate, substrate support, and an echuck
  • C 2 represents sheath capacitance and stray capacitances.
  • Q in this embodiment is an inherent capacitance of components associated with the chamber 1304, it is not an accessible capacitance that is added to gain control of processing.
  • some prior art approaches that utilize a linear amplifier couple bias power to the substrate with a blocking capacitor, and then utilize a monitored voltage across the blocking capacitor as feedback to control their linear amplifier.
  • a capacitor could couple a switch mode power supply to a substrate support in many of the embodiments disclosed herein, it is unnecessary to do so because feedback control using a blocking capacitor is not required in several embodiments of the present invention.
  • FIG. 14 is a graph depicting an exemplary voltage at Vo depicted in FIG. 13.
  • the current controller 1362 monitors the voltage at Vo, and ion current is calculated over an interval t (depicted in FIG. 14) as:
  • Ci is substantially constant for a given tool and is measureable, only Vo needs to be monitored to enable ongoing control of compensation current.
  • the current controller controls the current source 1364 so that Ic is substantially the same as 3 ⁇ 4. In this way, a narrow spread of ion energies may be maintained even when the ion current reaches a level that affects the voltage at the surface of the substrate. And in addition, if desired, the spread of the ion energy may be controlled as depicted in FIGS. 15B and 15C so that additional ion energies are realized at the surface of the substrate. [0067] Also depicted in FIG.
  • a feedback line 1370 which may be utilized in connection with controlling an ion energy distribution.
  • the value of AY depicted in FIG. 14 is indicative of instantaneous ion energy and may be used in many embodiments as part of a feedback control loop.
  • FIG. 16 shown is an exemplary embodiment of a current source 1664, which may be implemented to realize the current source 1364 described with reference to FIG. 13.
  • a controllable negative DC voltage source in connection with a series inductor L2
  • a current source may be realized by other components and/or configurations.
  • the substrate support 1708 in these embodiments includes an electrostatic chuck 1782, and an electrostatic chuck supply 1780 is utilized to apply power to the electrostatic chuck 1782.
  • the electrostatic chuck supply 1780 is positioned to apply power directly to the substrate support 1708, and in other variations, the electrostatic chuck supply 1780 is positioned to apply power in connection with the switch mode power supply.
  • serial chucking can be carried by either a separate supply or by use of the controller to effect a net DC chucking function.
  • FIG. 18 Shown in FIG. 18 is a block diagram depicting yet another embodiment of the present invention in which a plasma power supply 1884 that generally functions to generate plasma density is also configured to drive the substrate support 1808 alongside the switch mode power supply 1806 and electrostatic chuck supply 1880.
  • a plasma power supply 1884 that generally functions to generate plasma density is also configured to drive the substrate support 1808 alongside the switch mode power supply 1806 and electrostatic chuck supply 1880.
  • each of the plasma power supply 1884, the electrostatic chuck supply 1880, and the switch mode power supply 1806 may reside in separate assemblies, or two or more of the supplies 1806, 1880, 1884 may be architected to reside in the same physical assembly.
  • the embodiment depicted in FIG. 18 enables a top electrode 1886 (e.g., shower head) to be electrically grounded so as to obtain electrical symmetry and reduced level of damage due to fewer arcing events.
  • the switch mode power supply 1906 in this embodiment is configured to apply power to the substrate support and the chamber 1904 so as to both bias the substrate and ignite (and sustain) the plasma without the need for an additional plasma power supply (e.g., without the plasma power supply 102, 202, 1202, 1702, 1884).
  • the switch-mode power supply 1806 may be operated at a duty cycle that is sufficient to ignite and sustain the plasma while providing a bias to the substrate support.
  • FIG. 20 it is a block diagram depicting input parameters and control outputs of a control portion that may be utilized in connection with the embodiments described with reference to FIGS. 1-19.
  • the depiction of the control portion is intended to provide a simplified depiction of exemplary control inputs and outputs that may be utilized in connection with the embodiments discussed herein— it is not intended to a be hardware diagram.
  • the depicted control portion may be distributed among several discrete components that may be realized by hardware, software, firmware, or a combination thereof.
  • the controller depicted in FIG. 20 may provide the functionality of one or more of the controller 112 described with reference to FIG. 1; the controller 212 and ion energy control 220 components described with reference to FIG. 2; the controller 812 and ion energy control portion 820 described with reference to FIG. 8; the ion compensation component 1260 described with reference to FIG. 12; the current controller 1362 described with reference to FIG. 13; the Ice control depicted in FIG. 16, controllers 1712A, 1712B depicted in FIGS. 17A and 17B, respectively; and controllers 1812, 1912 depicted in FIGS. 18 and 19, respectively.
  • the parameters that may be utilized as inputs to the control portion include dVo/dt and AY, which are described in more detail with reference to FIGS. 13 and 14.
  • dVo/dt may be utilized to in connection with an ion-energy- distribution-spread input ⁇ to provide a control signal Ice, which controls a width of the ion energy distribution spread as described with reference to FIGS. 12, 13, 14, 15A-C, and FIG. 16.
  • an ion energy control input (Ei) in connection with optional feedback AV may be utilized to generate an ion energy control signal (e.g., that affects Vbus depicted in FIG.
  • a DC offset input which provides electrostatic force to hold the wafer to the chuck for efficient thermal control.
  • FIG. 21 illustrates a plasma processing system 2100 according to an embodiment of this disclosure.
  • the system 2100 includes a plasma processing chamber 2102 enclosing a plasma 2104 for etching a top surface 2118 of a substrate 2106.
  • the plasma is generated by a plasma source 2112 (e.g., in-situ or remote or projected) powered by a plasma power supply 2122.
  • a plasma sheath voltage V sheath measured between the plasma 2104 and the top surface 2118 of the substrate 2106 accelerates ions from the plasma 2104 across a plasma sheath 2115, causing the accelerated ions to impact a top surface 2118 of a substrate 2106 and etch the substrate 2106 (or portions of the substrate 2106 not protected by photoresist).
  • the plasma 2104 is at a plasma potential V 3 relative to ground (e.g., the plasma processing chamber 2102 walls).
  • the substrate 2106 has a bottom surface 2120 that is electrostatically held to a support 2108 via an electrostatic chuck 2111 and a chucking potential V chuck between a top surface 2121 of the electrostatic chuck 2111 and the substrate 2106.
  • the substrate 2106 is dielectric and therefore can have a first potential Vi at the top surface 2118 and a second potential V 2 at the bottom surface 2120.
  • the top surface of the electrostatic chuck 2121 is in contact with the bottom surface 2120 of the substrate, and thus these two surfaces 2120, 2121 are at the same potential, V 2 .
  • the first potential V l5 the chucking potential V chuck , and the second potential V 2 are controlled via an AC waveform with a DC bias or offset generated by a switch mode power supply 2130 and provided to the electrostatic chuck 2111 via a first conductor 2124.
  • the AC waveform is provided via the first conductor 2124
  • the DC waveform is provided via an optional second conductor 2125.
  • the AC and DC output of the switch mode power supply 2130 can be controlled via a controller 2132, which is also configured to control various aspects of the switch mode power supply 2130.
  • Ion energy and ion energy distribution are a function of the first potential Vi.
  • the switch mode power supply 2130 provides an AC waveform tailored to effect a desired first potential Vi known to generate a desired ion energy and ion energy distribution.
  • the AC waveform can be RF and have a non- sinusoidal waveform such as that illustrated in FIGS. 5, 6, 11, 14, 15a, 15b, and 15c.
  • the first potential Vi can be proportional to the change in voltage AY illustrated in FIG. 14.
  • the first potential Vi is also equal to the plasma voltage V 3 minus the plasma sheath voltage V sheath - But since the plasma voltage V 3 is often small (e.g., less than 20 V) compared to the plasma sheath voltage V sheath (e.g., 50 V - 2000 V), the first potential Vi and the plasma sheath voltage V sheath are approximately equal and for purposes of implementation can be treated as being equal. Thus, since the plasma sheath voltage V sheath dictates ion energies, the first potential Vi is proportional to ion energy distribution. By maintaining a constant first potential V l 5 the plasma sheath voltage V sheath is constant, and thus substantially all ions are accelerated via the same energy, and hence a narrow ion energy distribution is achieved.
  • the plasma voltage V 3 results from energy imparted to the plasma 2104 via the plasma source 2112.
  • the first potential Vi at the top surface 2118 of the substrate 2106 is formed via a combination of capacitive charging from the electrostatic chuck 2111 and charge buildup from electrons and ions passing through the sheath 2115.
  • the AC waveform from the switch mode power supply 2130 is tailored to offset the effects of ion and electron transfer through the sheath 2115 and the resulting charge buildup at the top surface 2118 of the substrate 2106 such that the first potential Vi remains substantially constant.
  • the chucking force that holds the substrate 2106 to the electrostatic chuck 2111 is a function of the chucking potential V chuck -
  • the switch mode power supply 2130 provides a DC bias, or DC offset, to the AC waveform, so that the second potential V 2 is at a different potential than the first potential Vi. This potential difference causes the chucking voltage V chuck -
  • the chucking voltage V chuck can be measured from the top surface 2221 of the electrostatic chuck 2111 to a reference layer inside the substrate 2106, where the reference layer includes any elevation inside the substrate except a bottom surface 2120 of the substrate 2106 (the exact location within the substrate 2106 of the reference layer can vary).
  • chucking is controlled by and is proportional to the second potential V 2 .
  • the second potential V 2 is equal to the DC offset of the switch mode power supply 2130 modified by the AC waveform (in other words an AC waveform with a DC offset where the DC offset is greater than a peak-to-peak voltage of the AC waveform).
  • the DC offset may be substantially larger than the AC waveform, such that the DC component of the switch mode power supply 2130 output dominates the second potential V 2 and the AC component can be neglected or ignored.
  • the potential within the substrate 2106 varies between the first and second potentials V l 5 V 2 .
  • the chucking potential V chuck can be positive or negative (e.g., Vi > V 2 or Vi ⁇ V 2 ) since the coulombic attractive force between the substrate 2106 and the electrostatic chuck 2111 exists regardless of the chucking potential V chuck polarity.
  • the switch mode power supply 2130 in conjunction with the controller 2132 can monitor various voltages deterministically and without sensors. In particular, the ion energy (e.g., mean energy and ion energy distribution) is deterministically monitored based on parameters of the AC waveform (e.g., slope and step).
  • the plasma voltage V 3 , ion energy, and ion energy distribution are proportional to parameters of the AC waveform produced by the switch mode power supply 2130.
  • the AY of the falling edge of the AC waveform is proportional to the first potential V l5 and thus to the ion energy.
  • the first potential Vi cannot be directly measured and the correlation between the switch mode power supply output and the first voltage Vi may vary based on the capacitance of the substrate 2106 and processing parameters, a constant of proportionality between AY and the first potential Vi can be empirically determined after a short processing time has elapsed. For instance, where the falling edge AY of the AC waveform is 50 V, and the constant of proportionality is empirically found to be 2 for the given substrate and process, the first potential Vi can be expected to be 100 V. Thus, the first potential V l5 along with ion energy, and ion energy distribution can be determined based on knowledge of the AC waveform of the switch mode power supply without any sensors inside the plasma processing chamber 2102.
  • the switch mode power supply 2130 in conjunction with the controller 2132 can monitor when and if chucking is taking place (e.g., whether the substrate 2106 is being held to the electrostatic chuck 2111 via the chucking potential V chuck )- [0082] Dechucking is performed by eliminating or decreasing the chucking potential c huck - This can be done by setting the second potential V 2 equal to the first potential Vi. In other words, the DC offset and the AC waveform can be adjusted in order to cause the chucking voltage V chuck to approach 0 V. Compared to conventional dechucking methods, the system 2100 achieves faster dechucking and thus greater throughput since both the DC offset and the AC waveform can be adjusted to achieve dechucking.
  • the DC and AC power supplies are in the switch mode power supply 2130, their circuitry is more unified, closer together, can be controlled via a single controller 2132 (as compared to typical parallel arrangements of DC and AC power supplies), and change output faster.
  • the speed of dechucking enabled by the embodiments herein disclosed also enables dechucking after the plasma 2104 is extinguished, or at least after power from the plasma source 2112 has been turned off.
  • the plasma source 2112 can take a variety of forms.
  • the plasma source 2112 includes an electrode inside the plasma processing chamber 2102 that establishes an RF field within the chamber 2102 that both ignites and sustains the plasma 2104.
  • the plasma source 2112 includes a remote projected plasma source that remotely generates an ionizing electromagnetic field, projects or extends the ionizing electromagnetic field into the processing chamber 2102, and both ignites and sustains the plasma 2104 within the plasma processing chamber using the ionizing electromagnetic field.
  • the remote projected plasma source also includes a field transfer portion (e.g., a conductive tube) that the ionizing electromagnetic field passes through en route to the plasma processing chamber 2102, during which time the ionizing electromagnetic field is attenuated such that the field strength within the plasma processing chamber 2102 is only a tenth or a hundred or a thousandth or an even smaller portion of the field strength when the field is first generated in the remote projected plasma source.
  • the plasma source 2112 is not drawn to scale.
  • the switch mode power supply 2130 can float and thus can be biased at any DC offset by a DC power source (not illustrated) connected in series between ground and the switch mode power supply 2130.
  • the switch mode power supply 2130 can provide an AC waveform with a DC offset either via AC and DC power sources internal to the switch mode power supply 2130 (see for example FIGS. 22, 23, 26), or via an AC power source internal to the switch mode power supply 2130 and a DC power supply external to the switch mode power supply 2130 (see for example FIGS 24, 27).
  • the switch mode power supply 2130 can be grounded and be series coupled to a floating DC power source coupled in series between the switch mode power supply 2130 and the electrostatic chuck 2111.
  • the controller 2132 can control an AC and DC output of the switch mode power supply when the switch mode power supply 2130 includes both an AC and DC power source. When the switch mode power supply 2130 is connected in series with a DC power source, the controller 2132 may only control the AC output of the switch mode power supply 2130. In an alternative embodiment, the controller 2130 can control both a DC power supply coupled to the switch mode power supply 2130, and the switch mode power supply 2130.
  • controller 2132 can control both a DC power supply coupled to the switch mode power supply 2130, and the switch mode power supply 2130.
  • the electrostatic chuck 2111 can be a dielectric (e.g., ceramic) and thus substantially block passage of DC voltages, or it can be a semiconductive material such as a doped ceramic. In either case, the electrostatic chuck 2111 can have a second voltage V 2 on a top surface 2121 of the electrostatic chuck 2111 that capacitively couples voltage to a top surface 2118 of the substrate 2106 (usually a dielectric) to form the first voltage Vi.
  • a dielectric e.g., ceramic
  • V 2 second voltage V 2 on a top surface 2121 of the electrostatic chuck 2111 that capacitively couples voltage to a top surface 2118 of the substrate 2106 (usually a dielectric) to form the first voltage Vi.
  • the plasma 2104 shape and size are not necessarily drawn to scale. For instance, an edge of the plasma 2104 can be defined by a certain plasma density in which case the illustrated plasma 2104 is not drawn with any particular plasma density in mind. Similarly, at least some plasma density fills the entire plasma processing chamber 2102 despite the illustrated plasma 2104 shape.
  • the illustrated plasma 2104 shape is intended primarily to show the sheath 2115, which does have a substantially smaller plasma density than the plasma 2104.
  • FIG. 22 illustrates another embodiment of a plasma processing system 2200.
  • the switch mode power supply 2230 includes a DC power source 2234 and an AC power source 2236 connected in series. Controller 2232 is configured to control an AC waveform with a DC offset output of the switch mode power supply 2230 by controlling both the AC power source 2236 waveform and the DC power source 2234 bias or offset.
  • This embodiment also includes an electrostatic chuck 2211 having a grid or mesh electrode 2210 embedded in the chuck 2211.
  • the switch mode power supply 2230 provides both an AC and DC bias to the grid electrode 2210.
  • the DC bias along with the AC component, which is substantially smaller than the DC bias and can thus be neglected, establishes a third potential V 4 on the grid electrode 2210.
  • the third potential V 4 is different than a potential at a reference layer anywhere within the substrate 2206 (excluding the bottom surface 2220 of the substrate 2206), a chucking potential V chuck and a coulombic chucking force are established which hold the substrate 2206 to the electrostatic chuck 2211.
  • the reference layer is an imaginary plane parallel to the grid electrode 2210.
  • the AC waveform capacitively couples from the grid electrode 2210 through a portion of the electrostatic chuck 2211, and through the substrate 2206 to control the first potential Vi on a top surface 2218 of the substrate 2206. Since a plasma potential V 3 is negligible relative to a plasma sheath voltage V sheath , the first potential Vi and the plasma sheath voltage V sheath are approximately equal, and for practical purposes are considered equal. Therefore, the first potential Vi equals the potential used to accelerate ions through the sheath 2215.
  • the electrostatic chuck 2211 can be doped so as to be conductive enough that any potential difference through the body of the chuck 2211 is negligible, and thus the grid or mesh electrode 2210 can be at substantially the same voltage as the second potential V 2.
  • the grid electrode 2210 can be any conductive planar device embedded in the electrostatic chuck 2211, parallel to the substrate 2206, and configured to be biased by the switch mode power supply 2230 and to establish a chucking potential V chuck - Although the grid electrode 2210 is illustrated as being embedded in a lower portion of the electrostatic chuck 2211, the grid electrode 2210 can be located closer or further from the substrate 2206. The grid electrode 2210 also does not have to have a grid pattern. In an embodiment, the grid electrode 2210 can be a solid electrode or have a non- solid structure with a non-grid shape (e.g., a checkerboard pattern).
  • the electrostatic chuck 2211 is a ceramic or other dielectric and thus the third potential V 4 on the grid electrode 2210 is not equal to the first potential Vi on a top surface 2221 of the electrostatic chuck 2211.
  • the electrostatic chuck 2211 is a doped ceramic that is slightly conductive and thus the third potential V 4 on the grid electrode 2210 can be equal to the second potential V 2 on the top surface 2221 of the electrostatic chuck 2211.
  • the switch mode power supply 2230 generates an AC output that can be non- sinusoidal.
  • the switch mode power supply 2230 is able to operate the DC and AC sources 2234, 2236 in series because the DC power source 2234 is AC-conductive and the AC power source 2236 is DC-conductive.
  • Exemplary AC power sources that are not DC-conductive are certain linear amplifiers which can be damaged when provided with DC voltage or current.
  • the use of AC-conductive and DC-conductive power sources reduces the number of components used in the switch mode power supply 2230. For instance, if the DC power source 2234 is AC -blocking, then an AC-bypass or DC- blocking component (e.g., a capacitor) may have to be arranged in parallel with the DC power source 2234. If the AC power source 2236 is DC-blocking, then a DC-bypass or AC-blocking component (e.g., an inductor) may have to be arranged in parallel with the AC power source 2236.
  • the AC power source 2238 is generally configured to apply a voltage bias to the electrostatic chuck 2211 in a controllable manner so as to effectuate a desired ion energy distribution for the ions bombarding the top surface 2218 of the substrate 2206. More specifically, the AC power source 2236 is configured to effectuate the desired ion energy distribution by applying one or more particular waveforms at particular power levels to the grid electrode 2210. And more particularly, the AC power source 2236 applies particular power levels to effectuate particular ion energies, and applies the particular power levels using one or more voltage waveforms defined by waveform data stored in a waveform memory (not illustrated).
  • the AC power source 2236 can make use of a switched mode configuration (see for example FIGS. 25-27).
  • the switch mode power supply 2230, and particularly the AC power source 2236, can produce an AC waveform as described in various embodiments of this disclosure.
  • the grid electrode 2210 may not be necessary and that other embodiments can be implemented without the grid electrode 2210.
  • the grid electrode 2210 is just one example of numerous devices that can be used to establish chucking potential V c h uc k-
  • FIG. 23 illustrates another embodiment, of a plasma processing system 2300.
  • the illustrated embodiment includes a switch mode power supply 2330 for providing an AC waveform and a DC bias to an electrostatic chuck 2311.
  • the switch mode power supply 2330 includes a DC power source 2334 and an AC power source 2336, both of which can be grounded.
  • the AC power source 2336 generates an AC waveform that is provided to a first grid or mesh electrode 2310 embedded in the electrostatic chuck 2311 via a first conductor 2324.
  • the AC power source 2336 establishes a potential V 4 on the first grid or mesh electrode 2310.
  • the DC power source 2334 generates a DC bias that is provided to a second grid or mesh electrode 2312 embedded in the electrostatic chuck 2311 via a second conductor 2325.
  • the DC power source 2334 establishes a potential V 5 on the second grid or mesh electrode 2312.
  • the potentials V 4 and V 5 can be independently controlled via the AC and DC power sources 2336, 2334, respectively.
  • the first and second grid or mesh electrodes 2310, 2312 can also be capacitively coupled and/or there can be DC coupling between the grid or mesh electrodes 2310, 2312 via a portion of the electrostatic chuck 2311. If either AC or DC coupling exists, then the potentials V 4 and V 5 may be coupled.
  • the first and second grid electrodes 2310, 2312 can be arranged in various locations throughout the electrostatic chuck 2311 including arranging the first grid electrode 2310 closer to the substrate 2306 than the second grid electrode 2312.
  • FIG. 24 illustrates another embodiment of a plasma processing system 2400.
  • a switch mode power supply 2430 provides an AC waveform to an electrostatic chuck 2411, where the switch mode power supply 2430 output is offset by a DC bias provided by a DC power supply 2434.
  • the AC waveform of the switch mode power supply 2430 has a waveform selected by controller 2435 to bombard a substrate 2406 with ions from a plasma 2404 having a narrow ion energy distribution.
  • the AC waveform can be non-sinusoidal (e.g., square wave or pulsed) and can be generated via an AC power source 2436 of the switch mode power supply 2430.
  • Chucking is controlled via the DC offset from the DC power supply 2434, which is controlled by controller 2433.
  • the DC power supply 2434 can be coupled in series between ground and the switch mode power supply 2430.
  • the switch mode power supply 2430 is floating such that its DC bias can be set by the DC power supply 2434.
  • controllers 2433, 2435 could be combined into a single functional unit, device, or system such as optional controller 2432. Additionally, controllers 2433 and 2435 can be coupled so as to communicate with each other and share processing resources.
  • FIG. 25 illustrates a further embodiment of a plasma processing system 2500.
  • the illustrated embodiment includes a switch mode power supply 2530 that produces an AC waveform that can have a DC offset provided by a DC power supply (not illustrated).
  • the switch mode power supply can be controlled via optional controller 2535, which encompasses a voltage and current controller 2537, 2539.
  • the switch mode power supply 2530 can include a controllable voltage source 2538 having a voltage output controlled by the voltage controller 2537, and a controllable current source 2540 having a current output controlled by the current controller 2539.
  • the controllable voltage and current sources 2538, 2540 can be in a parallel arrangement.
  • the controllable current source 2540 is configured to compensate for an ion current between a plasma 2504 and a substrate 2506.
  • the voltage and current controllers 2537, 2539 can be coupled and in communication with each other.
  • the voltage controller 2537 can also control a switched output 2539 of the controllable voltage source 2538.
  • the switched output 2539 can include two switches in parallel as illustrated, or can include any circuitry that converts an output of the controllable voltage source 2538 into a desired AC waveform (e.g., non- sinusoidal). Via the two switches, a controlled voltage or AC waveform from the controllable voltage source 2538 can be combined with a controlled current output of the controllable current source 2540 to generate an AC waveform output of the switch mode power supply 2530.
  • controllable voltage source 2538 is illustrated as having a given polarity, but one skilled in the art will recognize that the opposite polarity is an equivalent to that illustrated.
  • controllable voltage and current sources 2538, 2540 along with the switched output 2539 can be part of an AC power source 2536 and the AC power source 2536 can be arranged in series with a DC power source (not illustrated) that is inside or outside of the switch mode power supply 2530.
  • FIG. 26 illustrates yet another embodiment of a plasma processing system
  • a switch mode power supply 2630 provides an AC waveform having a DC offset to an electrostatic chuck 2611.
  • the AC component of the waveform is generated via a parallel combination of a controllable voltage source 2638 and a controllable current source 2640 connected to each other through a switched output 2639.
  • the DC offset is generated by a DC power source 2634 coupled in series between ground and the controllable voltage source 2638.
  • the DC power source 2634 can be floating rather than grounded.
  • the switch mode power supply 2630 can be floating or grounded.
  • the system 2600 can include one or more controllers for controlling an output of the switch mode power supply 2630.
  • a first controller 2632 can control the output of the switch mode power supply 2630, for instance via a second controller 2633 and a third controller 2635.
  • the second controller 2633 can control a DC offset of the switch mode power supply 2630 as generated by the DC power source 2634.
  • the third controller 2635 can control the AC waveform of the switch mode power supply 2630 by controlling the controllable voltage source 2638 and the controllable current source 2640.
  • a voltage controller 2637 controls the voltage output of the controllable voltage source 2638 and a current controller 2639 controls a current of the controllable current source 2640.
  • the voltage and current controllers 2637, 2639 can be in communication with each other and can be a part of the third controller 2635.
  • controllers relative to the power sources 2634, 2638, 2640
  • the third controller 2635 or the voltage controller 2637 can control a switched output 2639 between the controllable voltage source 2638 and the controllable current source 2640.
  • the second and third controllers 2633, 2635 can be in communication with each other (even though not illustrated as such).
  • the polarities of the controllable voltage and current sources 2638, 2640 are illustrative only and not meant to be limiting.
  • the switched output 2639 can operate by alternately switching two parallel switches in order to shape an AC waveform.
  • the switched output 2639 can include any variety of switches including, but not limited to, MOSFET and BJT.
  • the DC power source 2634 can be arranged between the controllable current source 2640 and the electrostatic chuck 2611 (in other words, the DC power source 2634 can float), and the switch mode power supply 2630 can be grounded.
  • FIG. 27 illustrates another embodiment of a plasma processing system
  • the switch mode power supply 2734 again is grounded, but instead of being incorporated into the switch mode power supply 2730, here the DC power source 2734 is a separate component and provides a DC offset to the entire switch mode power supply 2730 rather than just components within the switch mode power supply 2730.
  • FIG. 28 illustrates a method 2800 according to an embodiment of this disclosure.
  • the method 2800 includes a place a substrate in a plasma chamber operation 2802.
  • the method 2800 further includes a form a plasma in the plasma chamber operation 2804.
  • Such a plasma can be formed in situ or via a remote projected source.
  • the method 2800 also includes a switch power operation 2806.
  • the switch power operation 2806 involves controllably switching power to the substrate so as to apply a period voltage function to the substrate.
  • the periodic voltage function can be considered a pulsed waveform (e.g., square wave) or an AC waveform and includes a DC offset generated by a DC power source in series with a switch mode power supply.
  • the DC power source can be incorporated into the switch mode power supply and thus be in series with an AC power source of the switch mode power supply.
  • the DC offset generates a potential difference between a top surface of an electrostatic chuck and a reference layer within the substrate and this potential difference is referred to as the chucking potential.
  • the chucking potential between the electrostatic chuck and the substrate holds the substrate to the electrostatic chuck thus preventing the substrate from moving during processing.
  • the method 2800 further includes a modulate operation 2808 in which the periodic voltage function is modulated over multiple cycles. The modulation is responsive to a desired ion energy distribution at the surface of the substrate so as to effectuate the desired ion energy distribution on a time-averaged basis.
  • the method 2900 includes a place a substrate in a plasma chamber operation 2902.
  • the method 2900 further includes a form a plasma in the plasma chamber operation 2904. Such a plasma can be formed in situ or via a remote projected source.
  • the method 2900 also includes a receive at least one ion-energy distribution setting operation 2906.
  • the setting received in the receive operation 2906 can be indicative of one or more ion energies at a surface of the substrate.
  • the method 2900 further includes a switch power operation 2908 in which power to the substrate is controllably switched so as to effectuate the following: (1) a desired distribution of ion energies on a time-averaged basis; and (2) a desired chucking potential on a time- averaged basis.
  • the power can have an AC waveform and a DC offset.
  • the present invention provides, among other things, a method and apparatus for selectively generating desired ion energies using a switch-mode power.

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  • Chemical & Material Sciences (AREA)
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  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
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Abstract

L'invention porte sur des systèmes, des procédés et des appareils pour réguler des énergies d'ions dans une chambre de plasma et plaquer un substrat à un support de substrat. Un procédé donné à titre d'exemple comprend la mise en place d'un substrat dans une chambre de plasma, la formation d'un plasma dans la chambre de plasma, la commutation de façon réglable de l'énergie fournie au substrat de manière à appliquer une fonction de tension périodique au substrat, et la modulation, sur de multiples cycles de la fonction de tension périodique, de la fonction de tension périodique en réponse à une distribution désirée d'énergies d'ions à la surface du substrat, de manière à effectuer la distribution désirée d'énergies d'ions sur une base moyennée dans le temps.
PCT/US2012/048504 2011-07-28 2012-07-27 Système de régulation d'énergie d'ions pour systèmes de traitement d'énergie plasma avancés Ceased WO2013016619A1 (fr)

Priority Applications (3)

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CN201280047162.XA CN103890897B (zh) 2011-07-28 2012-07-27 用于先进等离子体离子能量处理系统的晶圆吸附系统
JP2014523057A JP5894275B2 (ja) 2011-07-28 2012-07-27 高度なプラズマイオンエネルギー処理システムのためのウェハチャッキングシステム
KR1020147004544A KR101667462B1 (ko) 2011-07-28 2012-07-27 개선된 플라즈마 이온 에너지 처리 시스템들에 대한 웨이퍼 처킹 시스템

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US13/193,299 US9435029B2 (en) 2010-08-29 2011-07-28 Wafer chucking system for advanced plasma ion energy processing systems
US13/193,299 2011-07-28

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US20120052599A1 (en) 2012-03-01
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US9435029B2 (en) 2016-09-06
KR20140060502A (ko) 2014-05-20

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