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WO2013008528A1 - Pixel circuit and display device - Google Patents

Pixel circuit and display device Download PDF

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Publication number
WO2013008528A1
WO2013008528A1 PCT/JP2012/062447 JP2012062447W WO2013008528A1 WO 2013008528 A1 WO2013008528 A1 WO 2013008528A1 JP 2012062447 W JP2012062447 W JP 2012062447W WO 2013008528 A1 WO2013008528 A1 WO 2013008528A1
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WO
WIPO (PCT)
Prior art keywords
voltage
pixel circuit
pixel
circuit
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2012/062447
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French (fr)
Japanese (ja)
Inventor
上田 直樹
中野 文樹
山内 祥光
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Sharp Corp
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Sharp Corp
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Publication of WO2013008528A1 publication Critical patent/WO2013008528A1/en
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Ceased legal-status Critical Current

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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3648Control of matrices with row and column drivers using an active matrix
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0814Several active elements per pixel in active matrix panels used for selection purposes, e.g. logical AND for partial update
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0819Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/02Improving the quality of display appearance
    • G09G2320/0219Reducing feedthrough effects in active matrix panels, i.e. voltage changes on the scan electrode influencing the pixel voltage due to capacitive coupling
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02Details of power systems and of start or stop of display operation
    • G09G2330/021Power management, e.g. power saving

Definitions

  • the present invention relates to a pixel circuit and a display device including the pixel circuit, and more particularly to an active matrix liquid crystal display device.
  • An active matrix liquid crystal display device includes a plurality of pixel circuits arranged in a row direction and a column direction (arranged in a matrix).
  • FIG. 8 is a circuit diagram showing the structure of a conventional pixel circuit.
  • the pixel circuit 100 includes a unit liquid crystal display element lc having a liquid crystal whose orientation state is controlled according to an applied voltage, a control terminal connected to the gate line gl, and a first terminal connected to the gate line gl.
  • a transistor for example, TFT: Thin Film Transistor
  • TFT Thin Film Transistor
  • t having a second terminal connected to the unit liquid crystal display element lc connected to the source line sl, and one end connected to a connection node n1 of the transistor t2 and the unit liquid crystal display element lc.
  • a capacitive element c1 whose other end is grounded.
  • conduction / non-conduction between the first terminal and the second terminal of the transistor t is controlled by the voltage applied to the gate line gl.
  • the voltage applied to the source line sl is applied to the unit liquid crystal display element lc, and the alignment state of the liquid crystal included in the unit liquid crystal display element lc is controlled. .
  • the polarization direction of the light transmitted through the unit liquid crystal display element lc is controlled.
  • the light that passes through the unit liquid crystal display element lc selectively passes through a polarizing plate that is separately provided according to the polarization direction, thereby displaying an image.
  • the gate lines gl connected to the pixel circuits 100 arranged in the same row are common, and the source lines sl connected to the pixel circuits 100 arranged in the same column are also common. Therefore, for example, when the voltage applied to the source line sl is applied to the unit liquid crystal display element lc of each pixel circuit 100 arranged in a certain row, each pixel circuit arranged in the certain row. A voltage that makes the first terminal and the second terminal of the transistor t conductive is applied to the gate line gl connected in common to 100. On the other hand, a voltage that makes the first terminal and the second terminal of the transistor t non-conductive is applied to the gate line gl connected in common to the pixel circuits 100 arranged in other rows.
  • each voltage to be applied to the unit liquid crystal display element lc of the pixel circuit 100 arranged in the certain row is applied to each source line sl. These operations are repeated while switching the row of the pixel circuit 100 to which a voltage is to be applied to the unit liquid crystal display element lc.
  • a unit liquid crystal display element is used during a period in which the first terminal and the second terminal of the transistor t are non-conductive. It is necessary to suppress fluctuations in the voltage applied to lc (the voltage held by the connection node n1). However, the transistor t generates a leakage current when the potential difference between the first terminal and the second terminal becomes large even if the first terminal and the second terminal are non-conductive, and the voltage held by the connection node n1 This can be a problem because it can fluctuate.
  • the potential difference between the source line sl to which the first terminal of the transistor t is connected and the connection node n1 to which the second terminal of the transistor t is connected can be large.
  • Patent Document 1 proposes a pixel circuit having a structure corresponding to the above problem.
  • This pixel circuit will be described with reference to FIG.
  • FIG. 9 is a circuit diagram showing the structure of a conventional pixel circuit.
  • the pixel circuit 200 includes a transistor t1 having a first terminal connected to the source line sl and a control terminal connected to the gate line gl, and a first terminal connected to the second terminal of the transistor t1.
  • a transistor t2 whose control terminal is connected to the gate line gl, a unit liquid crystal display element lc whose one end is connected to the second terminal of the transistor t2 and whose other end is grounded, and one end of which is the transistor t2 and the unit liquid crystal.
  • a capacitive element c1 connected to the connection node n1 of the display element lc and having the other end grounded; a capacitive element c2 having one end connected to the connection node n2 of the transistors t1 and t2 and the other end grounded; Is provided.
  • the pixel circuit 200 shown in FIG. 9 by providing two transistors t1 and t2 connected in series, a change in the voltage applied to the source line sl changes the voltage applied to the unit liquid crystal display element lc (at the connection node n1). The direct influence on the held voltage is suppressed.
  • the pixel circuit 200 includes the capacitive element c2, thereby suppressing a change in voltage held at the connection node n2.
  • a reduction in power consumption of a liquid crystal display device can be achieved by reducing the frame frequency (for example, lowering the frame frequency when displaying an image with little motion such as a still image), or the absolute voltage applied to the source line sl.
  • the value is reduced (for example, after a voltage having a relatively small absolute value is applied to the unit liquid crystal display element lc via the source line sl, a predetermined voltage is applied to the other end side of the capacitive element c1, thereby the voltage held by n1 is pushed up or down, and the absolute value of the voltage held by the connection node n1 is increased).
  • the fluctuation of the voltage applied to the unit liquid crystal display element lc significantly affects the displayed image. Therefore, it is necessary to accurately suppress fluctuations in the voltage held by the connection node n1 (leakage current between the first terminal and the second terminal of the transistor t2).
  • the voltage held by the connection node n1 can vary independently of the voltage held by the connection node n2. Then, the potential difference between the connection node n1 and the connection node n2 increases, and a leakage current between the first terminal and the second terminal of the transistor t2 is generated. As a result, the voltage applied to the unit liquid crystal display element lc (the voltage held by the connection node n1) fluctuates, which causes a problem because an image displayed on the liquid crystal display device becomes unstable.
  • the present invention has been made in view of the above problems, and an object thereof is to provide a pixel circuit and a display device that stably display an image.
  • the present invention provides a display element unit including a unit display element, An internal node that forms part of the display element unit and holds a pixel data voltage applied to the display element unit;
  • a switch circuit having a series circuit of first and second transistor elements, and transferring a source voltage applied to one end to the internal node connected to the other end via the series circuit;
  • a capacitance element having one end connected to an intermediate node connecting the first and second transistor elements and the other end connected to the internal node or a node that induces a voltage variation in the internal node;
  • a pixel circuit is provided.
  • the pixel circuit having the above characteristics is characterized in that the other end of the capacitance element is connected to the internal node.
  • the intermediate node voltage can be effectively tracked and varied with any variation in the pixel data voltage held by the internal node.
  • the capacitance of the electric capacitance element is equal to or more than a capacitance combining a parasitic capacitance formed between the control terminal of each of the first and second transistor elements and the intermediate node. It is preferable.
  • the pixel circuit having the above characteristics includes an auxiliary capacitance element having one end connected to the internal node and the other end applied with an auxiliary capacitance voltage. Further provision is preferable.
  • the pixel data voltage can change via the auxiliary capacitance element. Therefore, the absolute value of the difference between the voltage held by the intermediate node and the pixel data voltage held by the internal node can be larger, but by providing a capacitance element, the voltage held by the intermediate node can be reduced by the internal node. It is possible to change the pixel data voltage to follow the held pixel data voltage.
  • the pixel circuit having the above characteristics further includes an auxiliary capacitance element having one end connected to the internal node and the other end applied with an auxiliary capacitance voltage.
  • the other end of the electric capacitive element is connected to the other end of the auxiliary capacitive element.
  • the switch circuit includes a series circuit of the first and second transistor elements, The source voltage is applied to a first terminal of the first transistor element; A second terminal of the first transistor element and a first terminal of the second transistor element are connected to the intermediate node, and a second terminal of the second transistor element is connected to the internal node; Preferably, the capacitance element is connected to the internal node and the intermediate node in parallel with the second transistor element.
  • the electric capacitance element includes at least one of a cross capacitance of the semiconductor layer and the metal wiring layer, a cross capacitance of the plurality of metal wires, and a MOS capacitance, preferable.
  • the present invention forms a pixel circuit array by arranging a plurality of pixel circuits having the above characteristics in the row direction and the column direction, respectively.
  • a source voltage application circuit for applying the source voltage to one end of the switch circuit;
  • a gate voltage application circuit that applies a gate voltage to the switch circuit to control the presence or absence of conduction of the switch circuit;
  • a display device is provided.
  • the pixel circuit and the display device having the above characteristics, by providing the capacitance element, fluctuation of the voltage held by the intermediate node is suppressed. Therefore, the absolute value of the difference between the voltage held by the intermediate node and the pixel data voltage held by the internal node can be kept small. Therefore, it becomes possible to display an image stably.
  • the pixel circuit of the present invention configures each sub-pixel corresponding to each color (for example, three primary colors of RGB) included in each pixel, and performs a monochrome display.
  • each pixel is constituted.
  • FIG. 1 is a block diagram showing an example of a schematic configuration of a liquid crystal display device according to an embodiment of the present invention.
  • 1 is a partial cross-sectional schematic structure diagram of a liquid crystal display device according to an embodiment of the invention.
  • 1 is a circuit diagram showing a basic circuit configuration of a pixel circuit included in a liquid crystal display device according to an embodiment of the present invention.
  • FIG. 6 is a circuit diagram illustrating a circuit configuration example of a pixel circuit included in the liquid crystal display device according to the embodiment of the invention.
  • FIG. 6 is a timing chart showing an operation example of the liquid crystal display device and the pixel circuit according to the embodiment of the present invention.
  • the timing diagram which shows the operation result of a comparative example.
  • Circuit diagram showing the structure of a conventional pixel circuit Circuit diagram showing the structure of a conventional pixel circuit showing the structure of a conventional pixel circuit
  • FIG. 1 is a block diagram showing an example of a schematic configuration of a liquid crystal display device according to an embodiment of the present invention.
  • the liquid crystal display device 1 includes an active matrix substrate 10, a common electrode 30, a display control circuit 11, a common electrode drive circuit 12, a source driver 13, a gate driver 14, and various wirings to be described later.
  • a plurality of pixel circuits 2 are arranged in the row direction (horizontal direction in the figure) and in the column direction (vertical direction in the figure) to form a pixel circuit array.
  • a total of n ⁇ m pixel circuits of n in the column direction and m in the row direction are arranged. Note that n and m are natural numbers.
  • the uppermost row is the first row
  • the lowermost row is the nth row
  • the leftmost column is the first column
  • the rightmost column is the mth column.
  • the pixel circuit 2 in a specific row and column it is referred to as 2 (row, column).
  • the pixel circuit 2 arranged in the n-th row and the m-th column at the lower right in the drawing is referred to as 2 (n, m).
  • the pixel circuit 2 is displayed in a block form in order to avoid complicated drawing.
  • the active matrix substrate 10 is illustrated on the upper side of the common electrode 30 for the sake of convenience in order to clearly display that various wirings are formed on the active matrix substrate 10.
  • the minimum display unit corresponding to one pixel circuit 2 is referred to as a “pixel”.
  • the “pixel data voltage” held in each pixel circuit 2 is a voltage that controls the gradation of each color (for example, the three primary colors of RGB) when performing color display, and the luminance when performing monochrome display. The voltage to be controlled.
  • FIG. 2 is a partial sectional schematic structural diagram of the liquid crystal display device according to the embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional structure diagram showing the relationship between the active matrix substrate 10 and the common electrode 30, and shows the structure of the display element unit 21 (see FIG. 3) that is a component of the pixel circuit 2.
  • the active matrix substrate 10 is a light transmissive transparent substrate, and is made of, for example, glass or plastic.
  • the pixel circuit 2 connected to each wiring is formed on the active matrix substrate 10.
  • the pixel electrode 20 is illustrated as a representative of the components of the pixel circuit 2.
  • the pixel electrode 20 is made of a light transmissive transparent conductive material, for example, ITO (indium tin oxide).
  • a light-transmitting counter substrate 31 is disposed so as to face the active matrix substrate 10, and a liquid crystal layer 33 is held in a gap between the two substrates.
  • Polarizing plates (not shown) are attached to the outer surfaces of both substrates.
  • the liquid crystal layer 33 is sealed with a sealing material 32 in the peripheral portions of both substrates.
  • a common electrode 30 made of a light-transmissive transparent conductive material such as ITO is formed on the counter substrate 31 so as to face the pixel electrode 20.
  • the common electrode 30 is formed as a single film so as to spread over the counter substrate 31 substantially on one surface.
  • a unit liquid crystal display element LC (corresponding to a unit display element) is formed by one pixel electrode 20, a common electrode 30, and a liquid crystal layer 33 sandwiched therebetween.
  • liquid crystal display device 1 is a transmissive liquid crystal display device
  • a backlight device (not shown) is disposed on the back side of the active matrix substrate 10, and light is emitted from the active matrix substrate 10 toward the counter substrate 31. Is irradiated.
  • a plurality of wirings are formed on the active matrix substrate 10 in the vertical and horizontal directions. Specifically, n gate lines (GL (1), GL (2),..., GL (n)) extending in the horizontal direction (row direction) and the horizontal direction (row). N auxiliary capacitance lines (CSL (1), CSL (2),..., CSL (n)) in order from the top in the figure, and m lines extending in the vertical direction (column direction). Source lines (SL (1), SL (2),..., SL (m)) are formed in order from the left in the figure.
  • each gate line (GL (1), GL (2),..., GL (n)) is generalized and referred to as a gate line GL
  • each auxiliary capacitance line (CSL (1)).
  • CSL (2),..., CSL (n)) are generically referred to as auxiliary capacitance lines CSL
  • each source line (SL (1), SL (2),..., SL (m)) Generally referred to as source line SL.
  • the same number of gate lines GL and auxiliary capacitance lines CSL as the number of rows n of the pixel circuit 2 are formed on the active matrix substrate 10. Then, the m pixel circuits 2 (i, 1) to 2 (i, m) arranged in a certain row are connected to the same gate line GL (i) and the same auxiliary capacitance line CSL (i) (i Is a natural number between 1 and n).
  • the same number of source lines SL as the number m of columns of the pixel circuits 2 are formed on the active matrix substrate 10. Then, n pixel circuits 2 (1, j) to 2 (n, j) arranged in a certain column are connected to the same source line SL (j) (j is a natural number of 1 to m).
  • the source driver 13, the gate driver 14, and the CS driver 15 sequentially apply a voltage corresponding to an image to be displayed to the source line SL, the gate line GL, and the auxiliary capacitance line CSL.
  • a voltage is applied to the pixel electrode 20 formed in (1).
  • the source driver 13 can individually apply the source line voltage V SL (corresponding to the source voltage) to each of the source lines SL (1) to SL (m).
  • the gate driver 14 can individually apply the gate line voltage V GL (corresponding to the gate voltage) to each of the gate lines GL (1) to GL (n).
  • the CS driver 15 can individually apply the auxiliary capacitance line voltage V CSL (corresponding to the auxiliary capacitance voltage) to each of the auxiliary capacitance lines CSL (1) to CSL (n).
  • the common electrode drive circuit 12 applies a common voltage V COM to the common electrode 30.
  • the display control circuit 11 receives a data signal Dv and a timing signal Ct representing an image to be displayed from an external signal source. Then, the display control circuit 11 uses the digital image signal DA and the data side timing control signal Stc to be supplied to the source driver 13 as signals for displaying an image on the display element unit 21 of the pixel circuit array based on the signals Dv and Ct. And a scanning side timing control signal Gtc to be given to the gate driver 14, a common voltage control signal Sec to be given to the common electrode driving circuit 12, and an auxiliary capacitance line voltage control signal CStc to be given to the CS driver 15, respectively. Note that a part or all of the display control circuit 11 may be formed in the source driver 13 or the gate driver 14.
  • the liquid crystal display device 1 makes the common voltage V COM constant, and inverts the magnitude relationship of the source line voltage V SL with respect to the common voltage V COM at a predetermined timing, thereby changing the polarity of the voltage applied to the liquid crystal at a predetermined timing.
  • the “common voltage DC drive” that suppresses the burn-in of the display screen by reversing can be performed. Note that the polarity of the voltage applied to the liquid crystal in the liquid crystal display device 1 when the common electrode drive circuit 12 switches the common voltage VCOM between a high level and a low level at a predetermined timing by the control from the display control circuit 11.
  • the liquid crystal display device 1 is arranged in the polarity of the voltage applied to the unit liquid crystal display element LC by the pixel circuits 2 (i, 1) to 2 (i, m) arranged in the same row and in the adjacent row.
  • the pixel circuits 2 (i ⁇ 1, 1) to 2 (i ⁇ 1, m) are periodically (for example, one vertical period) so that the polarity of the voltage applied to the unit liquid crystal display element LC is reversed.
  • each pixel circuit 2 can perform “row line inversion driving” in which the polarity of the voltage applied to the unit liquid crystal display element LC is inverted.
  • the pixel circuits 2 (1, j) to 2 (n, j) arranged in the same column are arranged in adjacent columns and the polarity of the voltage applied to the unit liquid crystal display element LC.
  • the pixel circuits 2 (1, j ⁇ 1) to 2 (n, j ⁇ 1) are periodically (for example, one vertical period) so that the polarity of the voltage applied to the unit liquid crystal display element LC is reversed. It is also possible to perform “column line inversion driving” in which each pixel circuit 2 inverts the polarity of the voltage applied to the unit liquid crystal display element LC.
  • the liquid crystal display device 1 has a polarity of a voltage applied to a unit liquid crystal display element LC by a pixel circuit 2 (i, j) and a pixel circuit 2 (i ⁇ 1, j ⁇ 1) adjacent in the row direction or the column direction. ) Is applied to the unit liquid crystal display element LC periodically (for example, every vertical period) so that the polarity of the voltage applied to the unit liquid crystal display element LC is reversed. It is also possible to perform “dot inversion driving” that inverts the polarity of.
  • any of the driving methods can be realized by appropriately selecting wirings connected to the pixel circuit 2 and various voltages to be applied, but in the following, the liquid crystal display device 1 will be referred to as “row line inversion driving” for the sake of concrete description. An example of performing the above will be described.
  • the source driver 13 Based on the digital image signal DA and the data-side timing control signal Stc, the source driver 13 has a difference between the common voltage V COM and the source line voltage V SL corresponding to one row (m) of pixels represented by the digital signal DA. Each source line voltage VSL is generated and applied to each source line SL for each horizontal period so as to correspond to the value. However, the source driver 13 determines the source line voltage V V so that the polarity of the difference between the common voltage V COM and the source line voltage V SL in each pixel circuit 2 is periodically inverted (for example, every vertical period). Control SL .
  • the gate driver 14 can apply the source line voltage V SL to the connected pixel circuit 2 with respect to the gate line GL connected to the pixel circuit 2 arranged in a predetermined row.
  • a gate line voltage VGL having a voltage value to be applied is applied.
  • the source line voltage VSL is applied to the pixel circuits 2 arranged in the predetermined row.
  • the gate driver 14 switches the gate line GL to which the source line voltage V GL that enables the source line voltage V SL to be applied to the pixel circuit 2 is switched every horizontal period, so that the source line voltage V SL. Are sequentially applied to the pixel circuit 2.
  • the CS driver 15 applies the connected pixel circuit 2 to the unit liquid crystal display element LC with respect to the auxiliary capacitance line CSL connected to the pixel circuit 2 arranged in a predetermined row based on the auxiliary capacitance line voltage control signal CStc.
  • a storage capacitor line voltage V CSL that increases the absolute value of the voltage to be applied (the difference between the voltage level of the common voltage V COM and the source line voltage V SL ) is applied.
  • the CS driver 15 continues to apply the same auxiliary capacitance line voltage V CSL to the auxiliary capacitance line CSL until a new source line voltage V SL is applied to the pixel circuit 2.
  • the liquid crystal display device 1 may be any of a transmissive type, a reflective type, and a transflective type.
  • the gate driver 14 and the CS driver 15 are disposed so as to face each other with the active matrix substrate 10 interposed therebetween, but may be disposed on the same side. Further, the gate driver 14 and the CS driver 15 may be integrated. Further, the gate driver 14 and the CS driver 15 may be formed on the active matrix substrate 10 similarly to the pixel circuit 2.
  • FIG. 3 is a circuit diagram showing a basic circuit configuration of a pixel circuit included in the liquid crystal display device according to the embodiment of the present invention.
  • FIG. 4 is a circuit diagram of the pixel circuit included in the liquid crystal display device according to the embodiment of the present invention. It is a circuit diagram which shows a structural example.
  • the pixel circuit 2 includes a display element unit 21 including a unit liquid crystal display element LC, a switch circuit 22, an auxiliary capacitance element Cs, and an electric capacitance element Cd.
  • the unit liquid crystal display element LC includes the pixel electrode 20 and the common electrode 30. Note that the basic circuit configuration shown in FIG. 3 is a high-level circuit configuration including the specific circuit configuration example shown in FIG.
  • the switch circuit 22 includes a transistor T1 (corresponding to a first transistor element) and a transistor T2 (corresponding to a second transistor element) connected in series.
  • Each of the transistors T1 and T2 includes a first terminal and a second terminal (source electrode and drain electrode), and a control terminal (gate electrode).
  • a source line SL is connected to one end of the switch circuit 22, and one end of the auxiliary capacitive element Cs is connected to the other end to form an internal node N1.
  • the pixel data voltage V N1 held by the internal node N1 is applied to the pixel electrode 20 and is an image corresponding to the pixel data voltage V N1 (more precisely, the difference between the pixel data voltage V N1 and the common voltage V COM ).
  • the image according to the liquid crystal voltage V LC is displayed on the liquid crystal display device 1.
  • the other end of the auxiliary capacitance element Cs is connected to the auxiliary capacitance line CSL.
  • the control terminals of the transistors T1 and T2 of the switch circuit 22 are both connected to the gate line GL. That is, the conduction state of both the transistors T1 and T2 is controlled by the gate line voltage VGL .
  • the second terminal of the transistor T1 and the first terminal of the transistor T2 are connected to form an intermediate node N2. Accordingly, when at least the transistors T1 and T2 are turned off, the source line SL and the internal node N1 are turned off, and the source line voltage VSL is not applied to the internal node N1.
  • the switch circuit 22 may include elements other than the transistor T1 and the transistor T2.
  • the switch circuit 22 is configured only by a series circuit of a transistor T1 and a transistor T2, the first terminal of the transistor T1 is connected to the source line SL, and the second of the transistor T2 is connected. A terminal is connected to internal node N1.
  • the electric capacitance element Cd has one end connected to the intermediate node N2 and the other end connected to the internal node N1.
  • the electric capacitance element Cd may be constituted by a predetermined capacitance element, may be constituted by a cross capacitance of a semiconductor layer and a metal wiring layer, a cross capacitance of a plurality of metal wires, or a MOS capacitance. It may be configured by combining at least two of these.
  • the transistors T1 and T2 are both thin film transistors such as polycrystalline silicon TFTs or amorphous silicon TFTs formed on the active matrix substrate 10.
  • the transistors T1 and T2 may be configured with a single transistor or may be configured with a common control terminal. In the following, for the sake of concrete explanation, a case where the transistors T1 and T2 are N-channel TFTs is illustrated.
  • FIG. 5 is a timing diagram showing an operation example of the liquid crystal display device and the pixel circuit according to the embodiment of the present invention.
  • the pixel circuit 2 included in the liquid crystal display device 1 has the configuration of the pixel circuit 2 illustrated in FIG. 4 is illustrated.
  • the gate line voltage V GL having a voltage value H (for example, 10 V) that makes the transistors T1 and T2 conductive is set to the gate lines GL (1), GL ( 2),..., GL (n), and applied while being switched every horizontal period (1H).
  • H for example, 10 V
  • each pixel circuit 2 has the source line voltage V SL applied to the source line SL at that time.
  • the pixel data voltage V N1 is held in the internal node N1.
  • the gate line GL has a voltage value L (for example, ⁇ 5V) that makes the transistors T1 and T2 nonconductive. gate line voltage V GL of) is applied.
  • the liquid crystal display device 1 of this example performs “common voltage DC driving” and “row line inversion driving”. Therefore, the common voltage V COM is constant (for example, 2.0 V). Further, the source line SL, 1 every horizontal period, the common voltage V COM is greater than positive (+) and source line voltage V SL of the voltage value of the polarity, the common voltage V COM less negative (-) polarity of the voltage The source line voltage VSL that is a value is applied alternately. Further, the polarity of the source line voltage V SL applied to the source line SL of a certain column during a certain vertical period (1V) and the source line voltage V applied to the source line SL of the certain column during the next vertical period. This is the opposite of the polarity of SL .
  • the pixel circuit 2 to which the transistors T1 and T2 are turned on and the source line voltage VSL is applied is connected to the auxiliary capacitance line voltage applied to the connected auxiliary capacitance line CSL in the next horizontal period.
  • V CSL changes (in this example, increasing from L to H or decreasing from H to L).
  • the pixel data voltage V N1 held by the internal node N1 is pushed up or pushed down via the auxiliary capacitance element Cs, thereby increasing the absolute value of the voltage applied to the unit liquid crystal display element LC. Therefore, the absolute value of the source line voltage VSL can be reduced, and power consumption can be reduced.
  • the auxiliary capacitance line voltage V CSL increases from L to H, and the pixel held by the internal node N1 The data voltage V N1 is pushed up.
  • the auxiliary capacitance line voltage V CSL decreases from H to L, and the pixel data voltage V held by the internal node N1 N1 is pushed down.
  • the horizontal period in which the source line voltage V SL is applied to the certain pixel circuit 2 in the next vertical period ends.
  • the storage capacitor line voltage V CSL changes in the horizontal period next to the horizontal period). In this way, the pixel circuit 2 applies a desired voltage to the unit liquid crystal display element LC.
  • the transistors T1 and T2 when the transistors T1 and T2 are turned off, if the voltage value L of the gate line voltage VGL is sufficiently small, the source line voltage VSL changes every horizontal period. This is preferable because current leakage through the transistors T1 and T2 can be suppressed.
  • the pixel circuit 2 of this example by including the capacitance element Cd, it is possible to suppress the leakage current of the transistor T2 and the fluctuation of the pixel data voltage V N1 and display an image stably. This will be described below by comparing the operation result of the “comparative example” with the operation result of the “example”.
  • the “comparative example” is obtained by removing the capacitance element Cd from the pixel circuit 2 shown in FIG.
  • the “example” refers to the pixel circuit 2 shown in FIG. 4 including the capacitance element Cd (that is, the above-described embodiment).
  • the pixel circuit 2 (i, j) has a gate line GL (i) to which the gate line voltage VGL (i) is applied and a source line SL (to which the source line voltage VSL (j) is applied.
  • j) and the auxiliary capacitance line CSL (i) to which the auxiliary capacitance line voltage V CSL (i) is applied are respectively connected, and the internal node N1 (i, j) is connected to the pixel data voltage V N1 (i, j).
  • the intermediate node N2 (i, j) holds the intermediate node voltage VN2 (i, j) .
  • the source line voltage VSL (j) can take a positive voltage and a negative voltage one by one is illustrated.
  • FIG. 6 is a timing chart showing the operation result of the comparative example.
  • the internal node N1 (i, j) becomes The pixel data voltage V N1 (i, j) (broken line in the figure ) that is the source line voltage V SL (j) is held.
  • the intermediate node N2 (i, j) holds the intermediate node voltage V N2 (i, j) (solid line in the figure ) that is the source line voltage V SL (j) .
  • the pixel data voltage V N1 (i, j) and the intermediate node voltage V N2 (i, j) are both equal to or greater than the common voltage V COM (one-dot chain line in the figure).
  • the gate line voltage V GL (i) is changed from H to L
  • the gate line voltage V GL (i) is greatly reduced from the voltage value required to turn off the transistors T1 and T2.
  • the intermediate node voltage V N2 (i, j) is greatly reduced by the feedthrough.
  • the fluctuation range ⁇ V N2 of the intermediate node voltage V N2 (i, j) is obtained by deactivating the capacitance Cp obtained by combining the parasitic capacitances Cp1 and Cp2 described above, the other parasitic capacitance Cmisc related to the intermediate node N2, and the transistors T1 and T2.
  • the difference value ⁇ V G obtained by subtracting the voltage value L from the gate line voltage V GL (i) necessary for making the conductive state, it is expressed as the following formula (1).
  • ⁇ in the above formula (1) is larger than at least 50% because the parasitic capacitance Cmisc is sufficiently smaller than the parasitic capacitance Cp.
  • the pixel data voltage V N1 (i, j) decreases small because elements having large capacitances such as the unit liquid crystal display element LC and the auxiliary capacitance element Cs are connected to the internal node N1. Therefore, the absolute value Dc1 of the difference between the intermediate node voltage V N2 (i, j) and the pixel data voltage V N1 (i, j) becomes large.
  • the auxiliary capacitance line voltage V CSL (i) changes from L to H in order to push up the pixel data voltage V N1 (i, j) .
  • the pixel data voltage V N1 (i, j) is further increased by being pushed up through the auxiliary capacitance element Cs, but the intermediate node voltage V N2 (i, j) does not particularly change. Therefore, the absolute value Dc2 of the difference between the intermediate node voltage V N2 (i, j) and the pixel data voltage V N1 (i, j) is further larger than the absolute value Dc1 of the difference.
  • the source line voltage VSL (j) is a negative voltage
  • the gate line voltage VGL (i) is changed from L.
  • the internal node N1 (i, j) holds the pixel data voltage V N1 (i, j) which is the source line voltage V SL (j) .
  • the intermediate node N2 (i, j) holds the intermediate node voltage VN2 (i, j) that is the source line voltage VSL (j) .
  • the pixel data voltage V N1 (i, j) and the intermediate node voltage V N2 (i, j) are both equal to or smaller than the common voltage V COM (one-dot chain line in the figure).
  • the auxiliary capacitance line voltage V CSL (i) changes from H to L in order to push down the pixel data voltage V N1 (i, j) .
  • the pixel data voltage V N1 (i, j) is reduced by being pushed down through the auxiliary capacitance element Cs, but the intermediate node voltage V N2 (i, j) does not particularly vary. Therefore, the absolute value Dc4 of the difference between the intermediate node voltage V N2 (i, j) and the pixel data voltage V N1 (i, j) is smaller than the above-described Dc3.
  • the difference Dc4 is still large because the above-described Dc3 is sufficiently larger than the fluctuation due to the pixel data voltage V N1 (i, j) being pushed down.
  • the source line voltage V SL (j) corresponds to a period (one vertical period to the pixel circuits 2 (i, j) the source line voltage V SL (j) is then the source line voltage V SL after being applied (j) is applied.
  • the difference between the pixel data voltage V N1 (i, j) held by the internal node N1 (i, j) and the intermediate node voltage V N2 (i, j) held by the intermediate node N2 (i, j) However, it will grow and be maintained.
  • the pixel circuit 2 (i, j ) when a new source line voltage V SL (j) is applied to the pixel circuit 2 (i, j), the pixel data voltage V N1 after the change that the internal node N1 (i, j) has held so far. Since an unscheduled difference due to the change occurs between (i, j) and the pixel data voltage V N1 (i, j) before the change that is newly held thereafter, the pixel circuit 2 (i, j ) Display pixels become unstable. Specifically, for example, when the pixel circuit 2 (i, j) continuously displays the same pixel, even if the data of the pixel to be displayed is the same, before and after switching the pixel to be displayed The pixels are different (there is a luminance difference, that is, flickering occurs).
  • FIG. 7 is a timing chart showing an operation result of the embodiment.
  • the internal node N1 (i, j) becomes The pixel data voltage V N1 (i, j) (broken line in the figure ) that is the source line voltage V SL (j) is held.
  • the intermediate node N2 (i, j) holds the intermediate node voltage V N2 (i, j) (solid line in the figure ) that is the source line voltage V SL (j) .
  • the pixel data voltage V N1 (i, j) and the intermediate node voltage V N2 (i, j) are both equal to or greater than the common voltage V COM (one-dot chain line in the figure).
  • the gate line voltage V GL (i) is changed from H to L
  • the gate line voltage V GL (i) is greatly reduced from the voltage value necessary for making the transistors T1 and T2 non-conductive.
  • the intermediate node voltage V N2 (i, j) decreases due to the slew.
  • the fluctuation range ⁇ V N2 of the intermediate node voltage V N2 (i, j) includes the capacitance Cp obtained by combining the parasitic capacitances Cp1 and Cp2, the capacitance C1 of the electric capacitance element Cd, and other parasitic capacitances related to the intermediate node N2.
  • Cmisc a difference value ⁇ V G obtained by subtracting the voltage value L from the gate line voltage V GL (i) necessary for bringing the transistors T1 and T2 into a non-conductive state, is expressed as the following equation (2).
  • ⁇ in the above equation (2) is smaller than ⁇ in the above equation (1) because the capacitance C1 of the capacitance element Cd is included in the denominator. Therefore, the fluctuation of the intermediate node voltage V N2 (i, j) can be made smaller than that of the comparative example.
  • the capacitance C1 of the electric capacitance element Cd equal to or higher than the capacitance Cp obtained by combining the parasitic capacitances Cp1 and Cp2
  • the fluctuation of the intermediate node voltage V N2 (i, j) is compared. It becomes possible to make it 50% or less of the example. Therefore, the absolute value De1 of the difference between the intermediate node voltage V N2 (i, j) and the pixel data voltage V N1 (i, j) can be made smaller than Dc1 in the comparative example.
  • the auxiliary capacitance line voltage V CSL (i) changes from L to H in order to push up the pixel data voltage V N1 (i, j) .
  • the pixel data voltage V N1 (i, j) is further increased by being pushed up through the auxiliary capacitance element Cs.
  • the intermediate node voltage V N2 (i, j) is pushed up via the capacitance element Cd as the pixel data voltage V N1 (i, j) increases, so that the pixel data voltage V N1 (i, j) ) And become even larger. Therefore, the absolute value De2 of the difference between the intermediate node voltage V N2 (i, j) and the pixel data voltage V N1 (i, j) can be maintained as small as the above-described De1.
  • the source line voltage V SL (j) is a negative voltage and the gate line voltage V GL (i) is changed from L.
  • the internal node N1 (i, j) holds the pixel data voltage V N1 (i, j) which is the source line voltage V SL (j) .
  • the intermediate node N2 (i, j) holds the intermediate node voltage VN2 (i, j) that is the source line voltage VSL (j) .
  • the pixel data voltage V N1 (i, j) and the intermediate node voltage V N2 (i, j) are both equal to or smaller than the common voltage V COM (one-dot chain line in the figure).
  • the gate line voltage V GL (i) When the gate line voltage V GL (i) is changed from H to L, the intermediate node voltage V N2 (i, j) is reduced to a small value as in the case described above. Therefore, the absolute value De3 of the difference between the intermediate node voltage V N2 (i, j) and the pixel data voltage V N1 (i, j) can be made smaller than the absolute value Dc3 of the difference in the comparative example. In this case, the gate line voltage VGL (i) necessary for bringing the transistors T1 and T2 into a non-conductive state is smaller than that on the left side of FIG. ⁇ V G is reduced. Therefore, De3 is further smaller than De1 described above.
  • the auxiliary capacitance line voltage V CSL (i) changes from H to L in order to push down the pixel data voltage V N1 (i, j) .
  • the pixel data voltage V N1 (i, j) is reduced by being pushed down through the auxiliary capacitance element Cs.
  • the intermediate node voltage V N2 (i, j) is due to the decrease of the pixel data voltage V N1 (i, j), since the lowered thrust through the capacitance element Cd, pixel data voltage V N1 (i, It becomes smaller following j) . Therefore, the absolute value De4 of the difference between the intermediate node voltage V N2 (i, j) and the pixel data voltage V N1 (i, j) can be maintained as small as De3 described above.
  • the source line voltage V SL (j) corresponds to a period (one vertical period to the pixel circuits 2 (i, j) the source line voltage V SL (j) is then the source line voltage V SL after being applied (j) is applied.
  • the difference between the pixel data voltage V N1 (i, j) held by the internal node N1 (i, j) and the intermediate node voltage V N2 (i, j) held by the intermediate node N2 (i, j) The absolute value of can be kept small.
  • the leakage current between the internal node N1 (i, j) and the intermediate node N2 (i, j) is suppressed during the period, so that the pixel data voltage held by the internal node N1 (i, j) Variations in V N1 (i, j) are suppressed.
  • the liquid crystal display device 1 and the pixel circuit 2 according to the embodiment of the present invention can display an image stably.
  • ⁇ Modification> ⁇ 1> From the viewpoint of stably displaying an image on the liquid crystal display device 1 (suppressing fluctuations in the pixel data voltage V N1 held by the internal node N1), it is preferable that the capacitance C1 of the capacitance element Cd is larger. However, by increasing the capacitance C1 of the capacitance element Cd, the capacitance element Cd blocks light transmitted through the pixel circuit 2 (the aperture ratio is deteriorated). Therefore, it is preferable that the capacitance C1 of the electric capacitance element Cd be kept at a necessary minimum value.
  • the internal node voltage V N1 set to a desired value for example, the internal node voltage V N1 after being pushed up or pushed down through the auxiliary capacitance element Cs as described above
  • the source line voltage V SL In other words, the internal node voltage V N1 (i, j) of the pixel circuit 2 (i, j) and the source line voltage V SL (j) can be made close to each other ).
  • it is preferable to set the capacitance C1 of the electric capacitance element Cd so as to satisfy the following formula (3), because fluctuations in the internal node voltage VN1 can be more effectively suppressed.
  • the capacitance C1 of the capacitance element Cd is set to be about 50% of the total parasitic capacitance (Cp + C1 + Cmisc) related to the intermediate node N2 as in the above equation (3), the transistors T1 and T2 are in a non-conductive state. Even if a leak current sometimes occurs, fluctuations in the internal node voltage V N1 can be more effectively suppressed. This will be described below.
  • the charge flowing out from the internal node N1 to the intermediate node N2 via the transistor T2 is Q2, and the charge flowing out from the source line SL to the intermediate node N2 via the transistor T1 Is Q1, and the total parasitic capacitance related to the internal node N1 is Cpix.
  • it is generated by the change ⁇ V N1 in the potential of the internal node N1 caused by the charge Q2 flowing out from the internal node N1 to the intermediate node N2, and the charges Q1 and Q2 flowing into the intermediate node N2 via the transistors T1 and T2.
  • the change [Delta] V N2 of the potential of the intermediate node N2 as shown in the following equation (4).
  • the optimum value of the capacitance C1 of the capacitance element Cd is equal to or higher than the total of other parasitic capacitances (Cp + Cmisc) related to the intermediate node N2. It is preferable that the decrease in the aperture ratio is determined within an allowable range. Moreover, since the effect obtained according to the capacity
  • ⁇ 3> The configuration in which the pixel circuit 2 includes the auxiliary capacitance element Cs and pushes up or pushes down the pixel data voltage V N1 held by the internal node N1 via the auxiliary capacitance element Cs has been illustrated.
  • the element Cs may not be provided.
  • the absolute value of the difference between the intermediate node voltage V N2 and the pixel data voltage V N1 becomes larger as described above, so that the effect obtained by applying the present invention can be obtained. growing.
  • the electric capacitance element Cd has an intermediate node voltage V N2 and a pixel data voltage V N1 .
  • the absolute value of the difference can be reduced. That is, the circuit configuration illustrated as the embodiment (see FIGS. 3 and 4) is not limited, and other circuit configurations may be used.
  • one end of the electric capacitance element Cd is connected to the intermediate node N2, and the other end is not the internal node N1, but the auxiliary capacitance line CSL (the pixel data voltage V N1 held by the internal node N1 via the auxiliary capacitance element Cs) May be connected to a node that induces fluctuations.
  • the intermediate node voltage V N2 due to the feedthrough is suppressed, or a change in the pixel data voltage V N1 due to the change in the auxiliary capacitance line voltage V CSL is followed by the intermediate node voltage V N2. Can be changed.
  • the capacity coupling efficiency with respect to the intermediate node voltage V N2 according to the change in the auxiliary capacitance line voltage V CSL is larger than the circuit configuration exemplified as the embodiment. Therefore, the optimum value of the capacitance C1 of the electric capacitance element Cd may be different from the optimum value in the circuit configuration exemplified as the embodiment.
  • the circuit configuration when the circuit configuration is such that one end of the capacitance element Cd is connected to the intermediate node N2 and the other end is connected to the internal node N1, the pixel data voltage held by the internal node N1 Any variation in V N1 (for example, variation due to variation in common voltage V COM , etc.) is preferable because the intermediate node voltage V N2 can be effectively followed and varied.
  • the transistors T1 and T2 included in the pixel circuit 2 are N-channel TFTs has been illustrated, but may be a P-channel TFT.
  • the pixel circuit 2 includes a P-channel TFT, it is possible to execute the same operation by taking measures such as reversing the positive / negative of the voltage value in the operation example of the liquid crystal display device 1 and the pixel circuit 2 described above. The same effect can be obtained.
  • the present invention is applicable to other than the liquid crystal display device 1.
  • the present invention can be applied to a display device other than a liquid crystal display device as long as the display device can hold a pixel data voltage and display an image based on the pixel data voltage.
  • the pixel circuit according to the present invention and the display device including the pixel circuit can be used for a liquid crystal display device, for example.
  • Liquid Crystal Display Device 2 Pixel Circuit 10: Active Matrix Substrate 11: Display Control Circuit 12: Electrode Driver Circuit 13: Source Driver 14: Gate Driver 20: Pixel Electrode 21: Display Element Unit 22: Switch Circuit 30: Common Electrode 31 : Counter substrate 32: Sealing material 33: Liquid crystal layer GL: Auxiliary gate line SL: Source line CSL: Auxiliary capacitance line LC: Unit liquid crystal display element N1: Internal node N2: Intermediate node T1, T2: Transistor Cs: Auxiliary capacitance element Cd : Electric capacitance element Cp1, Cp2: Parasitic capacitance

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Abstract

Provided are a pixel circuit and a display device that stably display images. The pixel circuit (2) comprises: a display element section (21) including a unit display element (LC); an internal node (N1) that configures part of the display element section (21) and holds the pixel data voltage applied to the display element section (21); and a switch circuit (22) having a series circuit for a first and a second transistor element (T1, T2) and which sends the source voltage applied to one end thereof to the internal node (N1) connected to the other end thereof, via the series circuit. The pixel circuit (2) has an electrical capacitance element (Cd) between the internal node (N1) and an intermediate node (N2) connecting the first and second transistor elements (T1, T2).

Description

画素回路及び表示装置Pixel circuit and display device

 本発明は、画素回路及び当該画素回路を備えた表示装置に関し、特にアクティブマトリクス型の液晶表示装置に関する。 The present invention relates to a pixel circuit and a display device including the pixel circuit, and more particularly to an active matrix liquid crystal display device.

 近年、アクティブマトリクス型の液晶表示装置が普及している。アクティブマトリクス型の液晶表示装置は、行方向及び列方向にそれぞれ配置される(マトリクス状に配置される)複数の画素回路を備える。 In recent years, active matrix liquid crystal display devices have become widespread. An active matrix liquid crystal display device includes a plurality of pixel circuits arranged in a row direction and a column direction (arranged in a matrix).

 アクティブマトリクス型の液晶表示装置に備えられる画素回路について、図面を参照して説明する。図8は、従来の画素回路の構造を示す回路図である。図8に示すように、画素回路100は、印加される電圧に応じて配向状態が制御される液晶を有する単位液晶表示素子lcと、制御端子がゲート線glに接続されるとともに第1端子がソース線slに接続されて第2端子が単位液晶表示素子lcに接続されるトランジスタ(例えば、TFT:Thin Film Transistor)tと、一端がトランジスタt2及び単位液晶表示素子lcの接続ノードn1に接続されるとともに他端が接地される容量素子c1と、を備える。 A pixel circuit provided in an active matrix liquid crystal display device will be described with reference to the drawings. FIG. 8 is a circuit diagram showing the structure of a conventional pixel circuit. As shown in FIG. 8, the pixel circuit 100 includes a unit liquid crystal display element lc having a liquid crystal whose orientation state is controlled according to an applied voltage, a control terminal connected to the gate line gl, and a first terminal connected to the gate line gl. A transistor (for example, TFT: Thin Film Transistor) t having a second terminal connected to the unit liquid crystal display element lc connected to the source line sl, and one end connected to a connection node n1 of the transistor t2 and the unit liquid crystal display element lc. And a capacitive element c1 whose other end is grounded.

 図8に示す画素回路100では、ゲート線glに印加される電圧によって、トランジスタtの第1端子及び第2端子間の導通/非導通が制御される。トランジスタtの第1端子及び第2端子間が導通すると、ソース線slに印加されている電圧が単位液晶表示素子lcに印加されて、単位液晶表示素子lcが備える液晶の配向状態が制御される。これにより、単位液晶表示素子lcを透過する光の偏光方向が制御される。そして、単位液晶表示素子lcを透過する光が、その偏光方向に応じて別途備える偏光板を選択的に透過することで、画像が表示される。 In the pixel circuit 100 shown in FIG. 8, conduction / non-conduction between the first terminal and the second terminal of the transistor t is controlled by the voltage applied to the gate line gl. When the first terminal and the second terminal of the transistor t are made conductive, the voltage applied to the source line sl is applied to the unit liquid crystal display element lc, and the alignment state of the liquid crystal included in the unit liquid crystal display element lc is controlled. . Thereby, the polarization direction of the light transmitted through the unit liquid crystal display element lc is controlled. Then, the light that passes through the unit liquid crystal display element lc selectively passes through a polarizing plate that is separately provided according to the polarization direction, thereby displaying an image.

 また、同じ行に配置される画素回路100に接続されるゲート線glは共通であり、同じ列に配置される画素回路100に接続されるソース線slも共通である。そのため、例えばある行に配置されるそれぞれの画素回路100の単位液晶表示素子lcに対して、ソース線slに印加されている電圧が印加される場合、当該ある行に配置されるそれぞれの画素回路100に共通して接続されるゲート線glに、トランジスタtの第1端子及び第2端子間を導通させる電圧が印加される。一方、他の行に配置される画素回路100に共通して接続されるゲート線glには、トランジスタtの第1端子及び第2端子間を非導通にする電圧が印加される。そして、それぞれのソース線slに、当該ある行に配置される画素回路100の単位液晶表示素子lcに印加すべきそれぞれの電圧が印加される。これらの動作は、単位液晶表示素子lcに電圧を印加すべき画素回路100の行を切り替えながら、繰り返し行われる。 Also, the gate lines gl connected to the pixel circuits 100 arranged in the same row are common, and the source lines sl connected to the pixel circuits 100 arranged in the same column are also common. Therefore, for example, when the voltage applied to the source line sl is applied to the unit liquid crystal display element lc of each pixel circuit 100 arranged in a certain row, each pixel circuit arranged in the certain row. A voltage that makes the first terminal and the second terminal of the transistor t conductive is applied to the gate line gl connected in common to 100. On the other hand, a voltage that makes the first terminal and the second terminal of the transistor t non-conductive is applied to the gate line gl connected in common to the pixel circuits 100 arranged in other rows. Then, each voltage to be applied to the unit liquid crystal display element lc of the pixel circuit 100 arranged in the certain row is applied to each source line sl. These operations are repeated while switching the row of the pixel circuit 100 to which a voltage is to be applied to the unit liquid crystal display element lc.

 液晶表示装置が、ちらつき(フリッカ)等の発生を抑制して画像を安定に表示するためには、トランジスタtの第1端子及び第2端子間が非導通である期間中において、単位液晶表示素子lcに印加される電圧(接続ノードn1が保持する電圧)の変動を抑制する必要がある。しかしながら、トランジスタtは、たとえ第1端子及び第2端子間が非導通の状態であっても、第1端子及び第2端子間の電位差が大きくなるとリーク電流が生じ、接続ノードn1が保持する電圧が変動し得るため、問題となる。特に、上述のようにソース線slに印加される電圧が順次変化すると、トランジスタtの第1端子が接続されるソース線slと、トランジスタtの第2端子が接続される接続ノードn1との電位差が大きくなり得る。 In order for the liquid crystal display device to stably display an image by suppressing the occurrence of flicker or the like, a unit liquid crystal display element is used during a period in which the first terminal and the second terminal of the transistor t are non-conductive. It is necessary to suppress fluctuations in the voltage applied to lc (the voltage held by the connection node n1). However, the transistor t generates a leakage current when the potential difference between the first terminal and the second terminal becomes large even if the first terminal and the second terminal are non-conductive, and the voltage held by the connection node n1 This can be a problem because it can fluctuate. In particular, when the voltage applied to the source line sl sequentially changes as described above, the potential difference between the source line sl to which the first terminal of the transistor t is connected and the connection node n1 to which the second terminal of the transistor t is connected. Can be large.

 そこで、特許文献1では、上記問題に対応する構造を備えた画素回路が提案されている。この画素回路について、図9を参照して説明する。図9は、従来の画素回路の構造を示す回路図である。図9に示すように、画素回路200は、第1端子がソース線slに接続されるとともに制御端子がゲート線glに接続されるトランジスタt1と、第1端子がトランジスタt1の第2端子に接続されるとともに制御端子がゲート線glに接続されるトランジスタt2と、トランジスタt2の第2端子と一端が接続されるとともに他端が接地される単位液晶表示素子lcと、一端がトランジスタt2及び単位液晶表示素子lcの接続ノードn1に接続されるとともに他端が接地される容量素子c1と、一端がトランジスタt1及びトランジスタt2の接続ノードn2に接続されるとともに他端が接地される容量素子c2と、を備える。 Therefore, Patent Document 1 proposes a pixel circuit having a structure corresponding to the above problem. This pixel circuit will be described with reference to FIG. FIG. 9 is a circuit diagram showing the structure of a conventional pixel circuit. As shown in FIG. 9, the pixel circuit 200 includes a transistor t1 having a first terminal connected to the source line sl and a control terminal connected to the gate line gl, and a first terminal connected to the second terminal of the transistor t1. A transistor t2 whose control terminal is connected to the gate line gl, a unit liquid crystal display element lc whose one end is connected to the second terminal of the transistor t2 and whose other end is grounded, and one end of which is the transistor t2 and the unit liquid crystal. A capacitive element c1 connected to the connection node n1 of the display element lc and having the other end grounded; a capacitive element c2 having one end connected to the connection node n2 of the transistors t1 and t2 and the other end grounded; Is provided.

 図9に示す画素回路200では、直列接続する2つのトランジスタt1,t2を備えることで、ソース線slに印加される電圧の変化が、単位液晶表示素子lcに印加される電圧(接続ノードn1に保持される電圧)に対して直接的に影響することを抑制する。また、画素回路200は、容量素子c2を備えることで、接続ノードn2に保持される電圧の変動を抑制する。 In the pixel circuit 200 shown in FIG. 9, by providing two transistors t1 and t2 connected in series, a change in the voltage applied to the source line sl changes the voltage applied to the unit liquid crystal display element lc (at the connection node n1). The direct influence on the held voltage is suppressed. In addition, the pixel circuit 200 includes the capacitive element c2, thereby suppressing a change in voltage held at the connection node n2.

特開平4-251818号公報JP-A-4-251818

 昨今の液晶表示装置では、低消費電力化が求められている。例えば、携帯電話や電子ブックリーダなどのバッテリで駆動する機器に搭載される液晶表示装置では、1回の充電で長時間の使用を可能にするために、低消費電力化が特に必要とされる。そこで、図9に示す画素回路200を備える液晶表示装置について、低消費電力化を具体的に検討する。 In recent liquid crystal display devices, low power consumption is required. For example, in a liquid crystal display device mounted on a battery-driven device such as a mobile phone or an electronic book reader, low power consumption is particularly required in order to enable long-time use with a single charge. . Therefore, specific consideration will be given to reducing the power consumption of the liquid crystal display device including the pixel circuit 200 shown in FIG.

 例えば、液晶表示装置の低消費電力化は、フレーム周波数の低減(例えば、主として静止画等の動きの少ない画像を表示する場合に、フレーム周波数を下げる)や、ソース線slに印加する電圧の絶対値の低減(例えば、ソース線slを介して単位液晶表示素子lcに絶対値が比較的小さい電圧を印加した後で、容量素子c1の他端側に所定の電圧を印加することで、接続ノードn1が保持する電圧を突き上げまたは突き下げ、接続ノードn1が保持する電圧の絶対値を増大させること)によって行われる。 For example, a reduction in power consumption of a liquid crystal display device can be achieved by reducing the frame frequency (for example, lowering the frame frequency when displaying an image with little motion such as a still image), or the absolute voltage applied to the source line sl. The value is reduced (for example, after a voltage having a relatively small absolute value is applied to the unit liquid crystal display element lc via the source line sl, a predetermined voltage is applied to the other end side of the capacitive element c1, thereby the voltage held by n1 is pushed up or down, and the absolute value of the voltage held by the connection node n1 is increased).

 前者の方法を採用する場合、単位液晶表示素子lcに印加される電圧の変動が、表示する画像に顕著に影響するようになる。そのため、接続ノードn1が保持する電圧の変動(トランジスタt2の第1端子及び第2端子間のリーク電流)を、精度良く抑制する必要がある。また、後者の方法を採用する場合、接続ノードn1が保持する電圧が、接続ノードn2が保持する電圧とは独立して変動し得る。すると、接続ノードn1と接続ノードn2との電位差が大きくなることで、トランジスタt2の第1端子及び第2端子間のリーク電流が生じる。そして、これにより単位液晶表示素子lcに印加される電圧(接続ノードn1が保持する電圧)が変動することで、液晶表示装置が表示する画像が不安定になるため、問題となる。 When the former method is adopted, the fluctuation of the voltage applied to the unit liquid crystal display element lc significantly affects the displayed image. Therefore, it is necessary to accurately suppress fluctuations in the voltage held by the connection node n1 (leakage current between the first terminal and the second terminal of the transistor t2). When the latter method is employed, the voltage held by the connection node n1 can vary independently of the voltage held by the connection node n2. Then, the potential difference between the connection node n1 and the connection node n2 increases, and a leakage current between the first terminal and the second terminal of the transistor t2 is generated. As a result, the voltage applied to the unit liquid crystal display element lc (the voltage held by the connection node n1) fluctuates, which causes a problem because an image displayed on the liquid crystal display device becomes unstable.

 本発明は、上記の問題点に鑑みてなされたもので、その目的は、画像を安定して表示する画素回路及び表示装置を提供する点にある。 The present invention has been made in view of the above problems, and an object thereof is to provide a pixel circuit and a display device that stably display an image.

 上記目的を達成するため、本発明は、単位表示素子を含む表示素子部と、
 前記表示素子部の一部を構成し、前記表示素子部に印加される画素データ電圧を保持する内部ノードと、
 第1及び第2トランジスタ素子の直列回路を有し、一端に印加されるソース電圧を、前記直列回路を経由して他端に接続される前記内部ノードに転送するスイッチ回路と、
 一端が前記第1及び第2トランジスタ素子を接続する中間ノードに接続され、他端が前記内部ノードまたは当該内部ノードに電圧変動を誘起するノードに接続される電気容量素子と、
 を備えることを特徴とする画素回路を提供する。
In order to achieve the above object, the present invention provides a display element unit including a unit display element,
An internal node that forms part of the display element unit and holds a pixel data voltage applied to the display element unit;
A switch circuit having a series circuit of first and second transistor elements, and transferring a source voltage applied to one end to the internal node connected to the other end via the series circuit;
A capacitance element having one end connected to an intermediate node connecting the first and second transistor elements and the other end connected to the internal node or a node that induces a voltage variation in the internal node;
A pixel circuit is provided.

 さらに、上記特徴の画素回路は、前記電気容量素子の他端が、前記内部ノードに接続されることを特徴とする。 Furthermore, the pixel circuit having the above characteristics is characterized in that the other end of the capacitance element is connected to the internal node.

 このように構成すると、内部ノードが保持する画素データ電圧のあらゆる変動にも、中間ノード電圧を効果的に追随させて変動させることが可能になる。 With this configuration, the intermediate node voltage can be effectively tracked and varied with any variation in the pixel data voltage held by the internal node.

 さらに、上記特徴の画素回路は、前記電気容量素子の容量が、前記第1及び第2トランジスタ素子のそれぞれの制御端子と前記中間ノードとの間に形成される寄生容量を組み合わせた容量以上であると、好ましい。 Further, in the pixel circuit having the above characteristics, the capacitance of the electric capacitance element is equal to or more than a capacitance combining a parasitic capacitance formed between the control terminal of each of the first and second transistor elements and the intermediate node. It is preferable.

 このように構成すると、電気容量素子を備えない場合と比較して、中間ノードが保持する電圧の変動を、50%以下にすることが可能になる。 With this configuration, it is possible to make the fluctuation of the voltage held by the intermediate node 50% or less as compared with the case where no capacitance element is provided.

 さらに、上記特徴の画素回路は、一端が前記内部ノードに接続され、他端に補助容量電圧が印加される補助容量素子を、
 さらに備えると、好ましい。
Furthermore, the pixel circuit having the above characteristics includes an auxiliary capacitance element having one end connected to the internal node and the other end applied with an auxiliary capacitance voltage.
Further provision is preferable.

 このように構成すると、補助容量素子を介して画素データ電圧が変化し得る。そのため、中間ノードが保持する電圧と、内部ノードが保持する画素データ電圧との差分の絶対値がより大きくなり得るが、電気容量素子を設けることで、中間ノードが保持する電圧を、内部ノードが保持する画素データ電圧に追随させて変動させることが可能になる。 With this configuration, the pixel data voltage can change via the auxiliary capacitance element. Therefore, the absolute value of the difference between the voltage held by the intermediate node and the pixel data voltage held by the internal node can be larger, but by providing a capacitance element, the voltage held by the intermediate node can be reduced by the internal node. It is possible to change the pixel data voltage to follow the held pixel data voltage.

 さらに、上記特徴の画素回路は、一端が前記内部ノードに接続され、他端に補助容量電圧が印加される補助容量素子を、さらに備え、
 前記電気容量素子の他端が、前記補助容量素子の他端に接続されることを特徴とする。
Furthermore, the pixel circuit having the above characteristics further includes an auxiliary capacitance element having one end connected to the internal node and the other end applied with an auxiliary capacitance voltage.
The other end of the electric capacitive element is connected to the other end of the auxiliary capacitive element.

 さらに、上記特徴の画素回路は、前記スイッチ回路が、前記第1及び第2トランジスタ素子の直列回路で構成され、
 前記第1トランジスタ素子の第1端子に前記ソース電圧が印加され、
 前記第1トランジスタ素子の第2端子と前記第2トランジスタ素子の第1端子とが前記中間ノードに接続されるとともに、前記第2トランジスタ素子の第2端子が前記内部ノードに接続され、
 前記電気容量素子が、前記第2トランジスタ素子と並列に、前記内部ノード及び前記中間ノードに接続されると、好ましい。
Furthermore, in the pixel circuit having the above characteristics, the switch circuit includes a series circuit of the first and second transistor elements,
The source voltage is applied to a first terminal of the first transistor element;
A second terminal of the first transistor element and a first terminal of the second transistor element are connected to the intermediate node, and a second terminal of the second transistor element is connected to the internal node;
Preferably, the capacitance element is connected to the internal node and the intermediate node in parallel with the second transistor element.

 さらに、上記特徴の画素回路は、前記電気容量素子が、半導体層及び金属配線層の交差容量と複数の金属配線の交差容量とMOS容量の内の少なくとも1つの容量を備えて構成されると、好ましい。 Furthermore, in the pixel circuit having the above characteristics, when the electric capacitance element includes at least one of a cross capacitance of the semiconductor layer and the metal wiring layer, a cross capacitance of the plurality of metal wires, and a MOS capacitance, preferable.

 さらに、上記目的を達成するため、本発明は、上記特徴の画素回路を行方向及び列方向にそれぞれ複数配置して画素回路アレイを構成し、
 前記スイッチ回路の一端に前記ソース電圧を印加するソース電圧印加回路と、
 前記スイッチ回路の導通の有無を制御するゲート電圧を、前記スイッチ回路に印加するゲート電圧印加回路と、
 を備えることを特徴とする表示装置を提供する。
Furthermore, in order to achieve the above object, the present invention forms a pixel circuit array by arranging a plurality of pixel circuits having the above characteristics in the row direction and the column direction, respectively.
A source voltage application circuit for applying the source voltage to one end of the switch circuit;
A gate voltage application circuit that applies a gate voltage to the switch circuit to control the presence or absence of conduction of the switch circuit;
A display device is provided.

 上記特徴の画素回路及び表示装置によれば、電気容量素子を設けることで、中間ノードが保持する電圧の変動が抑制される。そのため、中間ノードが保持する電圧と内部ノードが保持する画素データ電圧との差分の絶対値を、小さくして維持することが可能になる。したがって、画像を安定して表示することが可能になる。 According to the pixel circuit and the display device having the above characteristics, by providing the capacitance element, fluctuation of the voltage held by the intermediate node is suppressed. Therefore, the absolute value of the difference between the voltage held by the intermediate node and the pixel data voltage held by the internal node can be kept small. Therefore, it becomes possible to display an image stably.

 なお、本発明の画素回路は、カラー表示を行う表示装置に適用する場合は各画素に含まれる各色(例えば、RGBの3原色)に対応する各サブ画素を構成し、モノクロ表示を行う表示装置に適用する場合は各画素を構成する。 Note that when applied to a display device that performs color display, the pixel circuit of the present invention configures each sub-pixel corresponding to each color (for example, three primary colors of RGB) included in each pixel, and performs a monochrome display. When applied to the above, each pixel is constituted.

本発明の実施形態に係る液晶表示装置の概略構成の一例を示すブロック図。1 is a block diagram showing an example of a schematic configuration of a liquid crystal display device according to an embodiment of the present invention. 本発明の実施形態に係る液晶表示装置の一部断面概略構造図。1 is a partial cross-sectional schematic structure diagram of a liquid crystal display device according to an embodiment of the invention. 本発明の実施形態に係る液晶表示装置が備える画素回路の基本回路構成を示す回路図。1 is a circuit diagram showing a basic circuit configuration of a pixel circuit included in a liquid crystal display device according to an embodiment of the present invention. 本発明の実施形態に係る液晶表示装置が備える画素回路の一回路構成例を示す回路図。FIG. 6 is a circuit diagram illustrating a circuit configuration example of a pixel circuit included in the liquid crystal display device according to the embodiment of the invention. 本発明の実施形態に係る液晶表示装置及び画素回路の動作例を示すタイミング図。FIG. 6 is a timing chart showing an operation example of the liquid crystal display device and the pixel circuit according to the embodiment of the present invention. 比較例の動作結果を示すタイミング図。The timing diagram which shows the operation result of a comparative example. 実施例の動作結果を示すタイミング図。The timing diagram which shows the operation result of an Example. 従来の画素回路の構造を示す回路図Circuit diagram showing the structure of a conventional pixel circuit 従来の画素回路の構造を示す回路図Circuit diagram showing the structure of a conventional pixel circuit

<液晶表示装置の概略構成>
 本発明の実施形態に係る液晶表示装置の概略構成について、以下図面を参照して説明する。図1は、本発明の実施形態に係る液晶表示装置の概略構成の一例を示すブロック図である。
<Schematic configuration of liquid crystal display device>
A schematic configuration of a liquid crystal display device according to an embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a block diagram showing an example of a schematic configuration of a liquid crystal display device according to an embodiment of the present invention.

 図1に示すように、液晶表示装置1は、アクティブマトリクス基板10、共通電極30、表示制御回路11、共通電極駆動回路12、ソースドライバ13、ゲートドライバ14、及び後述する種々の配線を備える。アクティブマトリクス基板10上には、画素回路2が、行方向(図中横方向)及び列方向(図中縦方向)にそれぞれ複数配置されて、画素回路アレイが形成されている。図1に示すアクティブマトリクス基板10には、列方向にn個かつ行方向にm個の合計n×m個の画素回路が、配置されている。なお、n及びmは自然数であり、図1において、最も上の行を1行目、最も下の行をn行目、最も左の列を1列目、最も右の列をm列目とする。また、以下において、特定の行及び列の画素回路2について言及する場合、2(行,列)と称する。例えば、図中右下のn行目かつm列目に配置される画素回路2は、2(n,m)と称する。 As shown in FIG. 1, the liquid crystal display device 1 includes an active matrix substrate 10, a common electrode 30, a display control circuit 11, a common electrode drive circuit 12, a source driver 13, a gate driver 14, and various wirings to be described later. On the active matrix substrate 10, a plurality of pixel circuits 2 are arranged in the row direction (horizontal direction in the figure) and in the column direction (vertical direction in the figure) to form a pixel circuit array. In the active matrix substrate 10 shown in FIG. 1, a total of n × m pixel circuits of n in the column direction and m in the row direction are arranged. Note that n and m are natural numbers. In FIG. 1, the uppermost row is the first row, the lowermost row is the nth row, the leftmost column is the first column, and the rightmost column is the mth column. To do. In the following, when referring to the pixel circuit 2 in a specific row and column, it is referred to as 2 (row, column). For example, the pixel circuit 2 arranged in the n-th row and the m-th column at the lower right in the drawing is referred to as 2 (n, m).

 図1では、図面が煩雑になるのを避けるため、画素回路2をブロック化して表示している。また、図1では、アクティブマトリクス基板10上に各種の配線が形成されていることを明瞭に表示するため、便宜的にアクティブマトリクス基板10を共通電極30の上側に図示している。 In FIG. 1, the pixel circuit 2 is displayed in a block form in order to avoid complicated drawing. In FIG. 1, the active matrix substrate 10 is illustrated on the upper side of the common electrode 30 for the sake of convenience in order to clearly display that various wirings are formed on the active matrix substrate 10.

 なお、便宜的に1つの画素回路2に対応する最小表示単位を「画素」と称する。このとき、各画素回路2で保持される「画素データ電圧」は、カラー表示をする場合は各色(例えば、RGBの3原色)の階調を制御する電圧となり、モノクロ表示をする場合は輝度を制御する電圧となる。 For convenience, the minimum display unit corresponding to one pixel circuit 2 is referred to as a “pixel”. At this time, the “pixel data voltage” held in each pixel circuit 2 is a voltage that controls the gradation of each color (for example, the three primary colors of RGB) when performing color display, and the luminance when performing monochrome display. The voltage to be controlled.

 図2は、本発明の実施形態に係る液晶表示装置の一部断面概略構造図である。図2は、アクティブマトリクス基板10と共通電極30の関係を示す概略断面構造図であり、画素回路2の構成要素である表示素子部21(図3参照)の構造を示している。アクティブマトリクス基板10は、光透過性の透明基板であり、例えばガラスやプラスチックからなる。図1に図示したように、アクティブマトリクス基板10上には各配線に接続される画素回路2が形成されている。図2では、画素回路2の構成要素を代表して画素電極20を図示している。画素電極20は、光透過性の透明導電材料、例えばITO(インジウムスズ酸化物)からなる。 FIG. 2 is a partial sectional schematic structural diagram of the liquid crystal display device according to the embodiment of the present invention. FIG. 2 is a schematic cross-sectional structure diagram showing the relationship between the active matrix substrate 10 and the common electrode 30, and shows the structure of the display element unit 21 (see FIG. 3) that is a component of the pixel circuit 2. The active matrix substrate 10 is a light transmissive transparent substrate, and is made of, for example, glass or plastic. As shown in FIG. 1, the pixel circuit 2 connected to each wiring is formed on the active matrix substrate 10. In FIG. 2, the pixel electrode 20 is illustrated as a representative of the components of the pixel circuit 2. The pixel electrode 20 is made of a light transmissive transparent conductive material, for example, ITO (indium tin oxide).

 また、アクティブマトリクス基板10に対向するように、光透過性の対向基板31が配置されており、これら両基板の間隙には液晶層33が保持される。両基板の外表面には偏光板(不図示)が貼り付けられている。 Further, a light-transmitting counter substrate 31 is disposed so as to face the active matrix substrate 10, and a liquid crystal layer 33 is held in a gap between the two substrates. Polarizing plates (not shown) are attached to the outer surfaces of both substrates.

 液晶層33は、両基板の周辺部分においてはシール材32によって封止されている。対向基板31には、ITO等の光透過性の透明導電材料からなる共通電極30が、画素電極20と対向するように形成されている。この共通電極30は、対向基板31上をほぼ一面に広がるように単一膜として形成されている。ここで、1つの画素電極20と共通電極30とその間に挟持された液晶層33によって単位液晶表示素子LC(単位表示素子に相当)が形成される。 The liquid crystal layer 33 is sealed with a sealing material 32 in the peripheral portions of both substrates. A common electrode 30 made of a light-transmissive transparent conductive material such as ITO is formed on the counter substrate 31 so as to face the pixel electrode 20. The common electrode 30 is formed as a single film so as to spread over the counter substrate 31 substantially on one surface. Here, a unit liquid crystal display element LC (corresponding to a unit display element) is formed by one pixel electrode 20, a common electrode 30, and a liquid crystal layer 33 sandwiched therebetween.

 なお、液晶表示装置1が透過型の液晶表示装置である場合、例えばバックライト装置(不図示)がアクティブマトリクス基板10の背面側に配置され、アクティブマトリクス基板10から対向基板31に向かう方向に光が照射される。 In the case where the liquid crystal display device 1 is a transmissive liquid crystal display device, for example, a backlight device (not shown) is disposed on the back side of the active matrix substrate 10, and light is emitted from the active matrix substrate 10 toward the counter substrate 31. Is irradiated.

 図1に示すように、アクティブマトリクス基板10上には複数の配線が縦横方向に形成されている。具体的には、横方向(行方向)に延伸するn本のゲート線(図中上から順にGL(1),GL(2),・・・,GL(n))と、横方向(行方向)に延伸するn本の補助容量線(図中上から順にCSL(1),CSL(2),・・・,CSL(n))と、縦方向(列方向)に延伸するm本のソース線(図中左から順にSL(1),SL(2),・・・,SL(m))と、が形成されている。なお、以下では便宜的に、各ゲート線(GL(1),GL(2),・・・,GL(n))を一般化してゲート線GLと称し、各補助容量線(CSL(1),CSL(2),・・・,CSL(n))を一般化して補助容量線CSLと称し、各ソース線(SL(1),SL(2),・・・,SL(m))を一般化してソース線SLと称する。 As shown in FIG. 1, a plurality of wirings are formed on the active matrix substrate 10 in the vertical and horizontal directions. Specifically, n gate lines (GL (1), GL (2),..., GL (n)) extending in the horizontal direction (row direction) and the horizontal direction (row). N auxiliary capacitance lines (CSL (1), CSL (2),..., CSL (n)) in order from the top in the figure, and m lines extending in the vertical direction (column direction). Source lines (SL (1), SL (2),..., SL (m)) are formed in order from the left in the figure. Hereinafter, for convenience, each gate line (GL (1), GL (2),..., GL (n)) is generalized and referred to as a gate line GL, and each auxiliary capacitance line (CSL (1)). , CSL (2),..., CSL (n)) are generically referred to as auxiliary capacitance lines CSL, and each source line (SL (1), SL (2),..., SL (m)) Generally referred to as source line SL.

 液晶表示装置1では、画素回路2の行数nと同数のゲート線GL及び補助容量線CSLが、アクティブマトリクス基板10上に形成される。そして、ある同じ行に配置されるm個の画素回路2(i,1)~2(i,m)は、同じゲート線GL(i)及び同じ補助容量線CSL(i)に接続する(iは1以上n以下の自然数)。また、液晶表示装置1では、画素回路2の列数mと同数のソース線SLが、アクティブマトリクス基板10上に形成される。そして、ある同じ列に配置されるn個の画素回路2(1,j)~2(n,j)は、同じソース線SL(j)に接続する(jは1以上m以下の自然数)。 In the liquid crystal display device 1, the same number of gate lines GL and auxiliary capacitance lines CSL as the number of rows n of the pixel circuit 2 are formed on the active matrix substrate 10. Then, the m pixel circuits 2 (i, 1) to 2 (i, m) arranged in a certain row are connected to the same gate line GL (i) and the same auxiliary capacitance line CSL (i) (i Is a natural number between 1 and n). In the liquid crystal display device 1, the same number of source lines SL as the number m of columns of the pixel circuits 2 are formed on the active matrix substrate 10. Then, n pixel circuits 2 (1, j) to 2 (n, j) arranged in a certain column are connected to the same source line SL (j) (j is a natural number of 1 to m).

 ソースドライバ13、ゲートドライバ14及びCSドライバ15は、ソース線SL、ゲート線GL、及び補助容量線CSLに対して、表示すべき画像に対応した電圧を順次印加することで、各画素回路2内に形成された画素電極20に電圧を印加する。このとき、ソースドライバ13は、各ソース線SL(1)~SL(m)に対して、個別にソース線電圧VSL(ソース電圧に相当)を印加し得る。同様に、ゲートドライバ14は、各ゲート線GL(1)~GL(n)に対して、個別にゲート線電圧VGL(ゲート電圧に相当)を印加し得る。また同様に、CSドライバ15は、各補助容量線CSL(1)~CSL(n)に対して、個別に補助容量線電圧VCSL(補助容量電圧に相当)を印加し得る。一方、共通電極駆動回路12は、共通電極30に対してコモン電圧VCOMを印加する。 The source driver 13, the gate driver 14, and the CS driver 15 sequentially apply a voltage corresponding to an image to be displayed to the source line SL, the gate line GL, and the auxiliary capacitance line CSL. A voltage is applied to the pixel electrode 20 formed in (1). At this time, the source driver 13 can individually apply the source line voltage V SL (corresponding to the source voltage) to each of the source lines SL (1) to SL (m). Similarly, the gate driver 14 can individually apply the gate line voltage V GL (corresponding to the gate voltage) to each of the gate lines GL (1) to GL (n). Similarly, the CS driver 15 can individually apply the auxiliary capacitance line voltage V CSL (corresponding to the auxiliary capacitance voltage) to each of the auxiliary capacitance lines CSL (1) to CSL (n). On the other hand, the common electrode drive circuit 12 applies a common voltage V COM to the common electrode 30.

 表示制御回路11は、外部の信号源から、表示すべき画像を表すデータ信号Dvとタイミング信号Ctを受け取る。そして、表示制御回路11は、当該信号Dv,Ctに基づき、画像を画素回路アレイの表示素子部21に表示させるための信号として、ソースドライバ13に与えるディジタル画像信号DA及びデータ側タイミング制御信号Stcと、ゲートドライバ14に与える走査側タイミング制御信号Gtcと、共通電極駆動回路12に与えるコモン電圧制御信号Secと、CSドライバ15に与える補助容量線電圧制御信号CStcと、をそれぞれ生成する。なお、表示制御回路11は、その一部または全部の回路が、ソースドライバ13またはゲートドライバ14内に形成されてもよい。 The display control circuit 11 receives a data signal Dv and a timing signal Ct representing an image to be displayed from an external signal source. Then, the display control circuit 11 uses the digital image signal DA and the data side timing control signal Stc to be supplied to the source driver 13 as signals for displaying an image on the display element unit 21 of the pixel circuit array based on the signals Dv and Ct. And a scanning side timing control signal Gtc to be given to the gate driver 14, a common voltage control signal Sec to be given to the common electrode driving circuit 12, and an auxiliary capacitance line voltage control signal CStc to be given to the CS driver 15, respectively. Note that a part or all of the display control circuit 11 may be formed in the source driver 13 or the gate driver 14.

 液晶表示装置1は、コモン電圧VCOMを一定にするとともに、コモン電圧VCOMに対するソース線電圧VSLの大小関係を所定のタイミングで反転することにより、液晶に印加する電圧の極性を所定のタイミングで反転させて表示画面の焼き付きを抑制する「コモン電圧DC駆動」を行い得る。なお、液晶表示装置1が、表示制御回路11からの制御により共通電極駆動回路12が所定のタイミングでコモン電圧VCOMを高レベルと低レベルの間で切り替えることにより、液晶に印加する電圧の極性を所定のタイミングで反転させて表示画面の焼き付きを抑制する「コモン電圧AC駆動」を行うことも可能である。いずれの駆動方法も、画素回路2に印加する各種電圧を適宜選定することで実現可能であるが、以下では説明の具体化のため、液晶表示装置1が「コモン電圧DC駆動」を行う場合について例示する。 The liquid crystal display device 1 makes the common voltage V COM constant, and inverts the magnitude relationship of the source line voltage V SL with respect to the common voltage V COM at a predetermined timing, thereby changing the polarity of the voltage applied to the liquid crystal at a predetermined timing. The “common voltage DC drive” that suppresses the burn-in of the display screen by reversing can be performed. Note that the polarity of the voltage applied to the liquid crystal in the liquid crystal display device 1 when the common electrode drive circuit 12 switches the common voltage VCOM between a high level and a low level at a predetermined timing by the control from the display control circuit 11. It is also possible to perform “common voltage AC drive” that suppresses burn-in of the display screen by inverting the display at a predetermined timing. Any of the driving methods can be realized by appropriately selecting various voltages to be applied to the pixel circuit 2, but in the following, for the sake of concrete description, the liquid crystal display device 1 performs “common voltage DC driving”. Illustrate.

 さらに、液晶表示装置1は、同じ行に配置される画素回路2(i,1)~2(i,m)が単位液晶表示素子LCに印加する電圧の極性と、隣接する行に配置される画素回路2(i±1,1)~2(i±1,m)が単位液晶表示素子LCに印加する電圧の極性と、が逆になるようにして、周期的に(例えば、1垂直期間毎に)それぞれの画素回路2が単位液晶表示素子LCに印加する電圧の極性を反転させる「行ライン反転駆動」を行い得る。なお、液晶表示装置1が、同じ列に配置される画素回路2(1,j)~2(n,j)が単位液晶表示素子LCに印加する電圧の極性と、隣接する列に配置される画素回路2(1,j±1)~2(n,j±1)が単位液晶表示素子LCに印加する電圧の極性と、が逆になるようにして、周期的に(例えば、1垂直期間毎に)それぞれの画素回路2が単位液晶表示素子LCに印加する電圧の極性を反転させる「列ライン反転駆動」を行うことも可能である。また、液晶表示装置1が、ある画素回路2(i,j)が単位液晶表示素子LCに印加する電圧の極性と、行方向または列方向に隣接する画素回路2(i±1,j±1)が単位液晶表示素子LCに印加する電圧の極性と、が逆になるようにして、周期的に(例えば、1垂直期間毎に)それぞれの画素回路2が単位液晶表示素子LCに印加する電圧の極性を反転させる「ドット反転駆動」を行うことも可能である。いずれの駆動方法も、画素回路2に接続する配線や印加する各種電圧を適宜選定することで実現可能であるが、以下では説明の具体化のため、液晶表示装置1が「行ライン反転駆動」を行う場合について例示する。 Furthermore, the liquid crystal display device 1 is arranged in the polarity of the voltage applied to the unit liquid crystal display element LC by the pixel circuits 2 (i, 1) to 2 (i, m) arranged in the same row and in the adjacent row. The pixel circuits 2 (i ± 1, 1) to 2 (i ± 1, m) are periodically (for example, one vertical period) so that the polarity of the voltage applied to the unit liquid crystal display element LC is reversed. Each time, each pixel circuit 2 can perform “row line inversion driving” in which the polarity of the voltage applied to the unit liquid crystal display element LC is inverted. In the liquid crystal display device 1, the pixel circuits 2 (1, j) to 2 (n, j) arranged in the same column are arranged in adjacent columns and the polarity of the voltage applied to the unit liquid crystal display element LC. The pixel circuits 2 (1, j ± 1) to 2 (n, j ± 1) are periodically (for example, one vertical period) so that the polarity of the voltage applied to the unit liquid crystal display element LC is reversed. It is also possible to perform “column line inversion driving” in which each pixel circuit 2 inverts the polarity of the voltage applied to the unit liquid crystal display element LC. Further, the liquid crystal display device 1 has a polarity of a voltage applied to a unit liquid crystal display element LC by a pixel circuit 2 (i, j) and a pixel circuit 2 (i ± 1, j ± 1) adjacent in the row direction or the column direction. ) Is applied to the unit liquid crystal display element LC periodically (for example, every vertical period) so that the polarity of the voltage applied to the unit liquid crystal display element LC is reversed. It is also possible to perform “dot inversion driving” that inverts the polarity of. Any of the driving methods can be realized by appropriately selecting wirings connected to the pixel circuit 2 and various voltages to be applied, but in the following, the liquid crystal display device 1 will be referred to as “row line inversion driving” for the sake of concrete description. An example of performing the above will be described.

 ソースドライバ13は、ディジタル画像信号DA及びデータ側タイミング制御信号Stcに基づき、コモン電圧VCOMとソース線電圧VSLとの差分が、ディジタル信号DAの表わす1行(m個)分のそれぞれの画素値に対応するように、水平期間毎にそれぞれのソース線電圧VSLを生成して、それぞれのソース線SLに印加する。ただし、ソースドライバ13は、各画素回路2におけるコモン電圧VCOMとソース線電圧VSLとの差分の極性が、周期的に(例えば、1垂直期間毎に)反転するように、ソース線電圧VSLを制御する。 Based on the digital image signal DA and the data-side timing control signal Stc, the source driver 13 has a difference between the common voltage V COM and the source line voltage V SL corresponding to one row (m) of pixels represented by the digital signal DA. Each source line voltage VSL is generated and applied to each source line SL for each horizontal period so as to correspond to the value. However, the source driver 13 determines the source line voltage V V so that the polarity of the difference between the common voltage V COM and the source line voltage V SL in each pixel circuit 2 is periodically inverted (for example, every vertical period). Control SL .

 ゲートドライバ14は、走査側タイミング制御信号Gtcに基づき、所定の行に配置される画素回路2に接続するゲート線GLに対して、接続される画素回路2にソース線電圧VSLを印加可能にする電圧値のゲート線電圧VGLを印加する。これにより、当該所定の行に配置される画素回路2に、上記のソース線電圧VSLが印加される。さらに、ゲートドライバ14は、上記の画素回路2にソース線電圧VSLを印加可能にするゲート線電圧VGLを印加するゲート線GLを、1水平期間毎に切り替えることで、ソース線電圧VSLを画素回路2に順次印加する。 Based on the scanning side timing control signal Gtc, the gate driver 14 can apply the source line voltage V SL to the connected pixel circuit 2 with respect to the gate line GL connected to the pixel circuit 2 arranged in a predetermined row. A gate line voltage VGL having a voltage value to be applied is applied. As a result, the source line voltage VSL is applied to the pixel circuits 2 arranged in the predetermined row. Furthermore, the gate driver 14 switches the gate line GL to which the source line voltage V GL that enables the source line voltage V SL to be applied to the pixel circuit 2 is switched every horizontal period, so that the source line voltage V SL. Are sequentially applied to the pixel circuit 2.

 CSドライバ15は、補助容量線電圧制御信号CStcに基づき、所定の行に配置される画素回路2に接続する補助容量線CSLに対して、接続される画素回路2が単位液晶表示素子LCに印加する電圧(コモン電圧VCOMの電圧レベルとソース線電圧VSLとの差分)の絶対値を大きくする補助容量線電圧VCSLを印加する。CSドライバ15は、画素回路2に新たなソース線電圧VSLが印加されるまで、補助容量線CSLに同じ補助容量線電圧VCSLを印加し続ける。 The CS driver 15 applies the connected pixel circuit 2 to the unit liquid crystal display element LC with respect to the auxiliary capacitance line CSL connected to the pixel circuit 2 arranged in a predetermined row based on the auxiliary capacitance line voltage control signal CStc. A storage capacitor line voltage V CSL that increases the absolute value of the voltage to be applied (the difference between the voltage level of the common voltage V COM and the source line voltage V SL ) is applied. The CS driver 15 continues to apply the same auxiliary capacitance line voltage V CSL to the auxiliary capacitance line CSL until a new source line voltage V SL is applied to the pixel circuit 2.

 なお、ソースドライバ13、ゲートドライバ14及びCSドライバ15の動作や、これらの動作に伴う画素回路2の動作の詳細については、後述する。 The details of the operations of the source driver 13, the gate driver 14, and the CS driver 15 and the operations of the pixel circuit 2 associated with these operations will be described later.

 また、液晶表示装置1は、透過型、反射型、半透過型のいずれであってもよい。また、図1では、アクティブマトリクス基板10を挟んで、ゲートドライバ14とCSドライバ15とが対向するように配置されるように図示したが、同じ側に配置してもよい。また、ゲートドライバ14とCSドライバ15とを一体化してもよい。また、ゲートドライバ14やCSドライバ15を、画素回路2と同様に、アクティブマトリクス基板10上に形成してもよい。 The liquid crystal display device 1 may be any of a transmissive type, a reflective type, and a transflective type. In FIG. 1, the gate driver 14 and the CS driver 15 are disposed so as to face each other with the active matrix substrate 10 interposed therebetween, but may be disposed on the same side. Further, the gate driver 14 and the CS driver 15 may be integrated. Further, the gate driver 14 and the CS driver 15 may be formed on the active matrix substrate 10 similarly to the pixel circuit 2.

<画素回路の構成>
 本発明の実施形態に係る液晶表示装置1が備える画素回路2の構成について、図面を参照して説明する。図3は、本発明の実施形態に係る液晶表示装置が備える画素回路の基本回路構成を示す回路図であり、図4は、本発明の実施形態に係る液晶表示装置が備える画素回路の一回路構成例を示す回路図である。
<Configuration of pixel circuit>
A configuration of the pixel circuit 2 provided in the liquid crystal display device 1 according to the embodiment of the present invention will be described with reference to the drawings. FIG. 3 is a circuit diagram showing a basic circuit configuration of a pixel circuit included in the liquid crystal display device according to the embodiment of the present invention. FIG. 4 is a circuit diagram of the pixel circuit included in the liquid crystal display device according to the embodiment of the present invention. It is a circuit diagram which shows a structural example.

 図3に示すように、画素回路2は、単位液晶表示素子LCを含む表示素子部21と、スイッチ回路22と、補助容量素子Csと、電気容量素子Cdと、を備える。また、図2を参照して説明したように、単位液晶表示素子LCには、画素電極20及び共通電極30が含まれる。なお、図3に示す基本回路構成は、図4に示す具体的な回路構成例を包含した上位概念の回路構成を示したものである。 As shown in FIG. 3, the pixel circuit 2 includes a display element unit 21 including a unit liquid crystal display element LC, a switch circuit 22, an auxiliary capacitance element Cs, and an electric capacitance element Cd. As described with reference to FIG. 2, the unit liquid crystal display element LC includes the pixel electrode 20 and the common electrode 30. Note that the basic circuit configuration shown in FIG. 3 is a high-level circuit configuration including the specific circuit configuration example shown in FIG.

 スイッチ回路22は、直列接続されたトランジスタT1(第1トランジスタ素子に相当)及びトランジスタT2(第2トランジスタ素子に相当)を備える。それぞれのトランジスタT1,T2は、第1端子及び第2端子(ソース電極及びドレイン電極)と、制御端子(ゲート電極)と、を備える。 The switch circuit 22 includes a transistor T1 (corresponding to a first transistor element) and a transistor T2 (corresponding to a second transistor element) connected in series. Each of the transistors T1 and T2 includes a first terminal and a second terminal (source electrode and drain electrode), and a control terminal (gate electrode).

 スイッチ回路22の一端にはソース線SLが接続され、他端には補助容量素子Csの一端が接続されて内部ノードN1が形成されている。この内部ノードN1が保持する画素データ電圧VN1は、画素電極20に印加され、画素データ電圧VN1に応じた画像(正確には、画素データ電圧VN1とコモン電圧VCOMとの差である液晶電圧VLCに応じた画像)が液晶表示装置1に表示される。また、補助容量素子Csの他端は、補助容量線CSLに接続される。 A source line SL is connected to one end of the switch circuit 22, and one end of the auxiliary capacitive element Cs is connected to the other end to form an internal node N1. The pixel data voltage V N1 held by the internal node N1 is applied to the pixel electrode 20 and is an image corresponding to the pixel data voltage V N1 (more precisely, the difference between the pixel data voltage V N1 and the common voltage V COM ). The image according to the liquid crystal voltage V LC ) is displayed on the liquid crystal display device 1. The other end of the auxiliary capacitance element Cs is connected to the auxiliary capacitance line CSL.

 スイッチ回路22のトランジスタT1,T2は、ともに制御端子がゲート線GLに接続される。即ち、ゲート線電圧VGLによって、トランジスタT1,T2の双方の導通状態が制御される。また、トランジスタT1の第2端子とトランジスタT2の第1端子とが接続されて、中間ノードN2が形成されている。したがって、少なくともトランジスタT1,T2が非導通状態になると、ソース線SL及び内部ノードN1間が非導通になり、ソース線電圧VSLが内部ノードN1に印加されなくなる。なお、図3に示す回路構成例では、スイッチ回路22が、トランジスタT1及びトランジスタT2以外の素子を含み得る。一方、図4に示す回路構成例では、スイッチ回路22が、トランジスタT1とトランジスタT2の直列回路のみで構成され、トランジスタT1の第1端子がソース線SLに接続されるとともに、トランジスタT2の第2端子が内部ノードN1と接続されている。 The control terminals of the transistors T1 and T2 of the switch circuit 22 are both connected to the gate line GL. That is, the conduction state of both the transistors T1 and T2 is controlled by the gate line voltage VGL . The second terminal of the transistor T1 and the first terminal of the transistor T2 are connected to form an intermediate node N2. Accordingly, when at least the transistors T1 and T2 are turned off, the source line SL and the internal node N1 are turned off, and the source line voltage VSL is not applied to the internal node N1. In the circuit configuration example shown in FIG. 3, the switch circuit 22 may include elements other than the transistor T1 and the transistor T2. On the other hand, in the circuit configuration example shown in FIG. 4, the switch circuit 22 is configured only by a series circuit of a transistor T1 and a transistor T2, the first terminal of the transistor T1 is connected to the source line SL, and the second of the transistor T2 is connected. A terminal is connected to internal node N1.

 電気容量素子Cdは、一端が中間ノードN2に接続され、他端が内部ノードN1に接続されている。例えば、電気容量素子Cdは、所定の容量素子で構成してもよいし、半導体層及び金属配線層の交差容量や複数の金属配線の交差容量で構成してもよいし、MOS容量で構成してもよいし、これらの少なくとも2つを組み合わせて構成してもよい。 The electric capacitance element Cd has one end connected to the intermediate node N2 and the other end connected to the internal node N1. For example, the electric capacitance element Cd may be constituted by a predetermined capacitance element, may be constituted by a cross capacitance of a semiconductor layer and a metal wiring layer, a cross capacitance of a plurality of metal wires, or a MOS capacitance. It may be configured by combining at least two of these.

 また、トランジスタT1,T2は、いずれもアクティブマトリクス基板10上に形成される、多結晶シリコンTFTあるいは非晶質シリコンTFT等の薄膜トランジスタである。例えば、トランジスタT1,T2は、単体のトランジスタで構成してもよいし、制御端子を共通化して構成してもよい。また、以下では説明の具体化のため、トランジスタT1,T2がNチャネル型のTFTである場合について例示する。 The transistors T1 and T2 are both thin film transistors such as polycrystalline silicon TFTs or amorphous silicon TFTs formed on the active matrix substrate 10. For example, the transistors T1 and T2 may be configured with a single transistor or may be configured with a common control terminal. In the following, for the sake of concrete explanation, a case where the transistors T1 and T2 are N-channel TFTs is illustrated.

 また、図3及び図4では、トランジスタT1,T2の寄生容量のうち、トランジスタT1の制御電極及び第2端子間の寄生容量Cp1と、トランジスタT2の制御電極及び第1端子間の寄生容量Cp2と、を図示している。 3 and 4, among the parasitic capacitances of the transistors T1 and T2, the parasitic capacitance Cp1 between the control electrode and the second terminal of the transistor T1, and the parasitic capacitance Cp2 between the control electrode and the first terminal of the transistor T2. Is illustrated.

<液晶表示装置及び画素回路の動作例>
 本発明の実施形態に係る液晶表示装置1及び画素回路2の動作例について、図面を参照して説明する。図5は、本発明の実施形態に係る液晶表示装置及び画素回路の動作例を示すタイミング図である。なお、以下では説明の具体化のために、液晶表示装置1が備える画素回路2が、図4に示す画素回路2の構成である場合について例示する。
<Operation Example of Liquid Crystal Display Device and Pixel Circuit>
An operation example of the liquid crystal display device 1 and the pixel circuit 2 according to the embodiment of the present invention will be described with reference to the drawings. FIG. 5 is a timing diagram showing an operation example of the liquid crystal display device and the pixel circuit according to the embodiment of the present invention. In the following, for the sake of concrete description, a case where the pixel circuit 2 included in the liquid crystal display device 1 has the configuration of the pixel circuit 2 illustrated in FIG. 4 is illustrated.

 図5に示すように、液晶表示装置1が動作するとき、トランジスタT1,T2を導通状態にする電圧値H(例えば、10V)のゲート線電圧VGLが、ゲート線GL(1),GL(2),・・・,GL(n)の順で、1水平期間(1H)毎に切り替えられながら印加される。これにより、ある行に配置される各画素回路2のトランジスタT1,T2が導通状態になると、その時にソース線SLのそれぞれに印加されているソース線電圧VSLが、当該各画素回路2が有する単位液晶表示素子LCの画素電極20に印加され、内部ノードN1に画素データ電圧VN1が保持される。なお、上記のトランジスタT1,T2を導通状態にする電圧値のゲート線電圧VGLが印加されない時、ゲート線GLには、トランジスタT1,T2を非導通状態にする電圧値L(例えば、-5V)のゲート線電圧VGLが印加される。 As shown in FIG. 5, when the liquid crystal display device 1 operates, the gate line voltage V GL having a voltage value H (for example, 10 V) that makes the transistors T1 and T2 conductive is set to the gate lines GL (1), GL ( 2),..., GL (n), and applied while being switched every horizontal period (1H). Thereby, when the transistors T1 and T2 of each pixel circuit 2 arranged in a certain row are in a conductive state, each pixel circuit 2 has the source line voltage V SL applied to the source line SL at that time. Applied to the pixel electrode 20 of the unit liquid crystal display element LC, the pixel data voltage V N1 is held in the internal node N1. Note that when the gate line voltage V GL having a voltage value that makes the transistors T1 and T2 conductive is not applied, the gate line GL has a voltage value L (for example, −5V) that makes the transistors T1 and T2 nonconductive. gate line voltage V GL of) is applied.

 上述のように、本例の液晶表示装置1は「コモン電圧DC駆動」及び「行ライン反転駆動」を行う。そのため、コモン電圧VCOMは一定である(例えば、2.0V)。また、ソース線SLには、1水平期間毎に、コモン電圧VCOMより大きい正(+)極性の電圧値となるソース線電圧VSLと、コモン電圧VCOMより小さい負(-)極性の電圧値となるソース線電圧VSLとが、交互に印加される。さらに、ある垂直期間(1V)中にある列のソース線SLに印加されるソース線電圧VSLの極性と、次の垂直期間中に当該ある列のソース線SLに印加されるソース線電圧VSLの極性とは、逆になる。 As described above, the liquid crystal display device 1 of this example performs “common voltage DC driving” and “row line inversion driving”. Therefore, the common voltage V COM is constant (for example, 2.0 V). Further, the source line SL, 1 every horizontal period, the common voltage V COM is greater than positive (+) and source line voltage V SL of the voltage value of the polarity, the common voltage V COM less negative (-) polarity of the voltage The source line voltage VSL that is a value is applied alternately. Further, the polarity of the source line voltage V SL applied to the source line SL of a certain column during a certain vertical period (1V) and the source line voltage V applied to the source line SL of the certain column during the next vertical period. This is the opposite of the polarity of SL .

 ある水平期間において、トランジスタT1,T2が導通状態になりソース線電圧VSLが印加された画素回路2は、次の水平期間において、接続されている補助容量線CSLに印加される補助容量線電圧VCSLが変化する(本例では、LからHに増大、または、HからLに減少する)。これにより、補助容量素子Csを介して内部ノードN1が保持する画素データ電圧VN1が突き上げまたは突き下げられることで、単位液晶表示素子LCに印加される電圧の絶対値が大きくなる。そのため、ソース線電圧VSLの絶対値を低減することが可能になり、低消費電力化を図ることができる。 In a certain horizontal period, the pixel circuit 2 to which the transistors T1 and T2 are turned on and the source line voltage VSL is applied is connected to the auxiliary capacitance line voltage applied to the connected auxiliary capacitance line CSL in the next horizontal period. V CSL changes (in this example, increasing from L to H or decreasing from H to L). As a result, the pixel data voltage V N1 held by the internal node N1 is pushed up or pushed down via the auxiliary capacitance element Cs, thereby increasing the absolute value of the voltage applied to the unit liquid crystal display element LC. Therefore, the absolute value of the source line voltage VSL can be reduced, and power consumption can be reduced.

 具体的に例えば、ある画素回路2において、正極性の電圧値となるソース線電圧VSLが印加された場合、補助容量線電圧VCSLはLからHに増大し、内部ノードN1が保持する画素データ電圧VN1が突き上げられる。一方、ある画素回路2において、負極性の電圧値となるソース線電圧VSLが印加された場合、補助容量線電圧VCSLはHからLに減少し、内部ノードN1が保持する画素データ電圧VN1が突き下げられる。 Specifically, for example, in a certain pixel circuit 2, when the source line voltage VSL having a positive voltage value is applied, the auxiliary capacitance line voltage V CSL increases from L to H, and the pixel held by the internal node N1 The data voltage V N1 is pushed up. On the other hand, when a source line voltage VSL having a negative voltage value is applied in a certain pixel circuit 2, the auxiliary capacitance line voltage V CSL decreases from H to L, and the pixel data voltage V held by the internal node N1 N1 is pushed down.

 そして、ある画素回路2に印加される補助容量線電圧VCSLは、ある垂直期間で変化した後、次の垂直期間において当該ある画素回路2にソース線電圧VSLが印加される水平期間が終了するまで、維持される(なお、当該水平期間の次の水平期間に、補助容量線電圧VCSLが変化する)。このようにして、画素回路2は、単位液晶表示素子LCに所望の電圧を印加する。 Then, after the storage capacitor line voltage V CSL applied to a certain pixel circuit 2 changes in a certain vertical period, the horizontal period in which the source line voltage V SL is applied to the certain pixel circuit 2 in the next vertical period ends. (The storage capacitor line voltage V CSL changes in the horizontal period next to the horizontal period). In this way, the pixel circuit 2 applies a desired voltage to the unit liquid crystal display element LC.

 上述の画素回路2において、トランジスタT1,T2を非導通状態にする際に、ゲート線電圧VGLの電圧値Lを十分に小さくすると、1水平期間毎にソース線電圧VSLが変化することに起因するトランジスタT1,T2を介した電流のリークを抑制することができるため、好ましい。 In the pixel circuit 2 described above, when the transistors T1 and T2 are turned off, if the voltage value L of the gate line voltage VGL is sufficiently small, the source line voltage VSL changes every horizontal period. This is preferable because current leakage through the transistors T1 and T2 can be suppressed.

 しかしながら、ゲート線電圧VGLの電圧値Lを小さくすると、ゲート線電圧VGLの立ち下げ時(HからLに変化する際)に、トランジスタT1,T2が非導通状態になったあとゲート線電圧VGLがさらに減少することでフィードスルーが大きくなり、中間ノードN2が保持する中間ノード電圧VN2が減少する。そのため、トランジスタT2を介したリーク電流によって、内部ノードN1が保持する画素データ電圧VN1が変動することが懸念される。特に、低消費電力化を図るべく、フレーム周波数を小さくするほど、リーク電流が生じ得る時間が長くなることで画素データ電圧VN1の変動が大きくなり、画像を安定して表示することが困難になることが懸念される。 However, reducing the voltage value L of the gate line voltage V GL, when falling of the gate line voltage V GL to (when changing to L from H), after the gate line voltage transistors T1, T2 becomes non-conductive state As V GL further decreases, the feedthrough increases, and the intermediate node voltage V N2 held by the intermediate node N2 decreases. Therefore, there is a concern that the pixel data voltage V N1 held by the internal node N1 fluctuates due to a leak current through the transistor T2. In particular, in order to reduce power consumption, the smaller the frame frequency, the longer the time during which leakage current can occur, and the fluctuation in the pixel data voltage V N1 increases, making it difficult to display images stably. There is concern about becoming.

 本例の画素回路2では、電気容量素子Cdを備えることで、トランジスタT2のリーク電流及び画素データ電圧VN1の変動を抑制して、画像を安定して表示することを可能にする。このことについて、以下、『比較例』の動作結果と『実施例』の動作結果とを対比して説明する。なお、『比較例』とは、図4に示す画素回路2において、電気容量素子Cdを除去したものである。一方、『実施例』とは、図4に示す画素回路2において、電気容量素子Cdを備えるもの(即ち、上述した実施形態)である。 In the pixel circuit 2 of this example, by including the capacitance element Cd, it is possible to suppress the leakage current of the transistor T2 and the fluctuation of the pixel data voltage V N1 and display an image stably. This will be described below by comparing the operation result of the “comparative example” with the operation result of the “example”. The “comparative example” is obtained by removing the capacitance element Cd from the pixel circuit 2 shown in FIG. On the other hand, the “example” refers to the pixel circuit 2 shown in FIG. 4 including the capacitance element Cd (that is, the above-described embodiment).

 また、以下では、任意の画素回路2(i,j)について説明する。なお、当該画素回路2(i,j)には、ゲート線電圧VGL(i)が印加されるゲート線GL(i)と、ソース線電圧VSL(j)が印加されるソース線SL(j)と、補助容量線電圧VCSL(i)が印加される補助容量線CSL(i)と、がそれぞれ接続され、内部ノードN1(i,j)が画素データ電圧VN1(i,j)を保持し、中間ノードN2(i,j)が中間ノード電圧VN2(i,j)を保持するものとする。さらに、以下では、説明の簡略化のために、ソース線電圧VSL(j)が、正極性の電圧と負極性の電圧とを1つずつ取り得る場合について例示する。 In the following, an arbitrary pixel circuit 2 (i, j) will be described. Note that the pixel circuit 2 (i, j) has a gate line GL (i) to which the gate line voltage VGL (i) is applied and a source line SL (to which the source line voltage VSL (j) is applied. j) and the auxiliary capacitance line CSL (i) to which the auxiliary capacitance line voltage V CSL (i) is applied are respectively connected, and the internal node N1 (i, j) is connected to the pixel data voltage V N1 (i, j). , And the intermediate node N2 (i, j) holds the intermediate node voltage VN2 (i, j) . Furthermore, in the following, for simplification of description, a case where the source line voltage VSL (j) can take a positive voltage and a negative voltage one by one is illustrated.

〈比較例の動作結果〉
 図6は、比較例の動作結果を示すタイミング図である。図6の左側に示すように、ソース線電圧VSL(j)が正極性の電圧であり、ゲート線電圧VGL(i)がLからHになると、内部ノードN1(i,j)が、当該ソース線電圧VSL(j)である画素データ電圧VN1(i,j)(図中の破線)を保持する。同様に、中間ノードN2(i,j)が、当該ソース線電圧VSL(j)である中間ノード電圧VN2(i,j)(図中の実線)を保持する。このとき、画素データ電圧VN1(i,j)及び中間ノード電圧VN2(i,j)は、ともにコモン電圧VCOM(図中の一点鎖線)と同等か、それよりも大きくなる。
<Operation result of comparative example>
FIG. 6 is a timing chart showing the operation result of the comparative example. As shown on the left side of FIG. 6, when the source line voltage VSL (j) is a positive voltage and the gate line voltage VGL (i) is changed from L to H, the internal node N1 (i, j) becomes The pixel data voltage V N1 (i, j) (broken line in the figure ) that is the source line voltage V SL (j) is held. Similarly, the intermediate node N2 (i, j) holds the intermediate node voltage V N2 (i, j) (solid line in the figure ) that is the source line voltage V SL (j) . At this time, the pixel data voltage V N1 (i, j) and the intermediate node voltage V N2 (i, j) are both equal to or greater than the common voltage V COM (one-dot chain line in the figure).

 そして、ゲート線電圧VGL(i)がHからLになるとき、トランジスタT1,T2を非導通状態にするために必要な電圧値よりもゲート線電圧VGL(i)が大きく減少するため、フィードスルーによって中間ノード電圧VN2(i,j)が大きく減少する。具体的に、中間ノード電圧VN2(i,j)の変動幅ΔVN2は、上述した寄生容量Cp1,Cp2を組み合わせた容量Cp、中間ノードN2に関する他の寄生容量Cmisc、トランジスタT1,T2を非導通状態にするために必要なゲート線電圧VGL(i)から電圧値Lを減じた差分値ΔV、を用いて、下記式(1)のように表される。 When the gate line voltage V GL (i) is changed from H to L, the gate line voltage V GL (i) is greatly reduced from the voltage value required to turn off the transistors T1 and T2. The intermediate node voltage V N2 (i, j) is greatly reduced by the feedthrough. Specifically, the fluctuation range ΔV N2 of the intermediate node voltage V N2 (i, j) is obtained by deactivating the capacitance Cp obtained by combining the parasitic capacitances Cp1 and Cp2 described above, the other parasitic capacitance Cmisc related to the intermediate node N2, and the transistors T1 and T2. Using the difference value ΔV G obtained by subtracting the voltage value L from the gate line voltage V GL (i) necessary for making the conductive state, it is expressed as the following formula (1).

 (数1)
 ΔVN2≒Cp/(Cp+Cmisc)×ΔV=α×ΔV  ・・・(1)
(Equation 1)
ΔV N2 ≈Cp / (Cp + Cmisc) × ΔV G = α × ΔV G (1)

 上記式(1)中のαは、寄生容量Cmiscが寄生容量Cpよりも十分に小さいことから、少なくとも50%よりは大きくなる。一方、画素データ電圧VN1(i,j)は、内部ノードN1に単位液晶表示素子LCや補助容量素子Csなどの容量が大きい素子が接続されているため、小さく減少する。したがって、中間ノード電圧VN2(i,j)と画素データ電圧VN1(i,j)との差分の絶対値Dc1が、大きいものとなる。 Α in the above formula (1) is larger than at least 50% because the parasitic capacitance Cmisc is sufficiently smaller than the parasitic capacitance Cp. On the other hand, the pixel data voltage V N1 (i, j) decreases small because elements having large capacitances such as the unit liquid crystal display element LC and the auxiliary capacitance element Cs are connected to the internal node N1. Therefore, the absolute value Dc1 of the difference between the intermediate node voltage V N2 (i, j) and the pixel data voltage V N1 (i, j) becomes large.

 さらにこの後、画素データ電圧VN1(i,j)を突き上げるべく、補助容量線電圧VCSL(i)がLからHに変化する。すると、画素データ電圧VN1(i,j)は、補助容量素子Csを介して突き上げられることでさらに大きくなるが、中間ノード電圧VN2(i,j)は特に変動しない。したがって、中間ノード電圧VN2(i,j)と画素データ電圧VN1(i,j)との差分の絶対値Dc2が、上記の差分の絶対値Dc1よりもさらに大きくなる。 Thereafter, the auxiliary capacitance line voltage V CSL (i) changes from L to H in order to push up the pixel data voltage V N1 (i, j) . Then, the pixel data voltage V N1 (i, j) is further increased by being pushed up through the auxiliary capacitance element Cs, but the intermediate node voltage V N2 (i, j) does not particularly change. Therefore, the absolute value Dc2 of the difference between the intermediate node voltage V N2 (i, j) and the pixel data voltage V N1 (i, j) is further larger than the absolute value Dc1 of the difference.

 一方、図6の右側(図6の左側の1垂直期間経過後)に示すように、ソース線電圧VSL(j)が負極性の電圧であり、ゲート線電圧VGL(i)がLからHになると、内部ノードN1(i,j)が、当該ソース線電圧VSL(j)である画素データ電圧VN1(i,j)を保持する。同様に、中間ノードN2(i,j)が、当該ソース線電圧VSL(j)である中間ノード電圧VN2(i,j)を保持する。このとき、画素データ電圧VN1(i,j)及び中間ノード電圧VN2(i,j)は、ともにコモン電圧VCOM(図中の一点鎖線)と同等か、それよりも小さくなる。 On the other hand, as shown on the right side of FIG. 6 (after the passage of one vertical period on the left side of FIG. 6), the source line voltage VSL (j) is a negative voltage, and the gate line voltage VGL (i) is changed from L. When it becomes H, the internal node N1 (i, j) holds the pixel data voltage V N1 (i, j) which is the source line voltage V SL (j) . Similarly, the intermediate node N2 (i, j) holds the intermediate node voltage VN2 (i, j) that is the source line voltage VSL (j) . At this time, the pixel data voltage V N1 (i, j) and the intermediate node voltage V N2 (i, j) are both equal to or smaller than the common voltage V COM (one-dot chain line in the figure).

 そして、ゲート線電圧VGL(i)がHからLになると、上述の場合と同様に、中間ノード電圧VN2(i,j)が大きく減少し、画素データ電圧VN1(i,j)が小さく減少する。したがって、中間ノード電圧VN2(i,j)と画素データ電圧VN1(i,j)との差分の絶対値Dc3が、大きいものとなる。ただし、この場合、トランジスタT1,T2を非導通状態にするために必要なゲート線電圧VGL(i)が、図6の左側の場合と比べて小さくなるため、上記式(1)の差分値ΔVが小さくなる。そのため、Dc3は、上述したDc1より小さくなる。 When the gate line voltage V GL (i) is changed from H to L, the intermediate node voltage V N2 (i, j) is greatly reduced and the pixel data voltage V N1 (i, j) is reduced as in the case described above. Decrease small. Therefore, the absolute value Dc3 of the difference between the intermediate node voltage V N2 (i, j) and the pixel data voltage V N1 (i, j) becomes large. However, in this case, the gate line voltage VGL (i) necessary for bringing the transistors T1 and T2 into a non-conductive state is smaller than that on the left side of FIG. ΔV G is reduced. Therefore, Dc3 is smaller than Dc1 described above.

 この後、画素データ電圧VN1(i,j)を突き下げるべく、補助容量線電圧VCSL(i)がHからLに変化する。すると、画素データ電圧VN1(i,j)は、補助容量素子Csを介して突き下げられることで小さくなるが、中間ノード電圧VN2(i,j)は特に変動しない。そのため、中間ノード電圧VN2(i,j)と画素データ電圧VN1(i,j)との差分の絶対値Dc4は、上述のDc3よりも小さくなる。しかしながら、上述のDc3が、画素データ電圧VN1(i,j)の突き下げによる変動よりも十分に大きいため、差分Dc4は依然として大きい。 Thereafter, the auxiliary capacitance line voltage V CSL (i) changes from H to L in order to push down the pixel data voltage V N1 (i, j) . Then, the pixel data voltage V N1 (i, j) is reduced by being pushed down through the auxiliary capacitance element Cs, but the intermediate node voltage V N2 (i, j) does not particularly vary. Therefore, the absolute value Dc4 of the difference between the intermediate node voltage V N2 (i, j) and the pixel data voltage V N1 (i, j) is smaller than the above-described Dc3. However, the difference Dc4 is still large because the above-described Dc3 is sufficiently larger than the fluctuation due to the pixel data voltage V N1 (i, j) being pushed down.

 比較例では、画素回路2(i,j)にソース線電圧VSL(j)が印加されてから次にソース線電圧VSL(j)が印加されるまでの期間(1垂直期間に相当する期間)中、内部ノードN1(i,j)が保持する画素データ電圧VN1(i,j)と中間ノードN2(i,j)が保持する中間ノード電圧VN2(i,j)との差分が、大きくなり維持される。そのため、当該期間において、内部ノードN1(i,j)と中間ノードN2(i,j)との間でリーク電流が生じ、内部ノードN1(i,j)が保持する画素データ電圧VN1(i,j)が変動することで、画素回路2(i,j)が表示する画素が変動する(輝度が変動する)。 In the comparative example, corresponds to a period (one vertical period to the pixel circuits 2 (i, j) the source line voltage V SL (j) is then the source line voltage V SL after being applied (j) is applied The difference between the pixel data voltage V N1 (i, j) held by the internal node N1 (i, j) and the intermediate node voltage V N2 (i, j) held by the intermediate node N2 (i, j) However, it will grow and be maintained. Therefore, during the period, a leak current is generated between the internal node N1 (i, j) and the intermediate node N2 (i, j), and the pixel data voltage V N1 (i , J) varies, the pixels displayed by the pixel circuit 2 (i, j) vary (luminance varies).

 さらに、画素回路2(i,j)に新たなソース線電圧VSL(j)が印加されるとき、内部ノードN1(i,j)がそれまで保持していた変動後の画素データ電圧VN1(i,j)と、その後新たに保持する変動前の画素データ電圧VN1(i,j)と、の間に当該変動に起因した予定外の差が生じるため、画素回路2(i,j)が表示する画素が不安定になる。具体的に例えば、画素回路2(i,j)が連続して同じ画素を表示しようとするとき、表示しようとする画素のデータが同じであったとしても、表示する画素を切り替える際の前後の画素が異なる(輝度差がある、即ち、ちらつき等を生じる)ものになる。 Further, when a new source line voltage V SL (j) is applied to the pixel circuit 2 (i, j), the pixel data voltage V N1 after the change that the internal node N1 (i, j) has held so far. Since an unscheduled difference due to the change occurs between (i, j) and the pixel data voltage V N1 (i, j) before the change that is newly held thereafter, the pixel circuit 2 (i, j ) Display pixels become unstable. Specifically, for example, when the pixel circuit 2 (i, j) continuously displays the same pixel, even if the data of the pixel to be displayed is the same, before and after switching the pixel to be displayed The pixels are different (there is a luminance difference, that is, flickering occurs).

 このように、比較例では、画像を安定して表示することが困難である。 Thus, in the comparative example, it is difficult to display an image stably.

〈実施例の動作結果〉
 図7は、実施例の動作結果を示すタイミング図である。図7の左側に示すように、ソース線電圧VSL(j)が正極性の電圧であり、ゲート線電圧VGL(i)がLからHになると、内部ノードN1(i,j)が、当該ソース線電圧VSL(j)である画素データ電圧VN1(i,j)(図中の破線)を保持する。同様に、中間ノードN2(i,j)が、当該ソース線電圧VSL(j)である中間ノード電圧VN2(i,j)(図中の実線)を保持する。このとき、画素データ電圧VN1(i,j)及び中間ノード電圧VN2(i,j)は、ともにコモン電圧VCOM(図中の一点鎖線)と同等か、それよりも大きくなる。
<Operational results of the example>
FIG. 7 is a timing chart showing an operation result of the embodiment. As shown on the left side of FIG. 7, when the source line voltage VSL (j) is a positive voltage and the gate line voltage VGL (i) is changed from L to H, the internal node N1 (i, j) becomes The pixel data voltage V N1 (i, j) (broken line in the figure ) that is the source line voltage V SL (j) is held. Similarly, the intermediate node N2 (i, j) holds the intermediate node voltage V N2 (i, j) (solid line in the figure ) that is the source line voltage V SL (j) . At this time, the pixel data voltage V N1 (i, j) and the intermediate node voltage V N2 (i, j) are both equal to or greater than the common voltage V COM (one-dot chain line in the figure).

 そして、ゲート線電圧VGL(i)がHからLになると、トランジスタT1,T2を非導通状態にするために必要な電圧値よりもゲート線電圧VGL(i)が大きく減少するため、フィードスルーによって中間ノード電圧VN2(i,j)が減少する。具体的に、中間ノード電圧VN2(i,j)の変動幅ΔVN2は、上述した寄生容量Cp1,Cp2を組み合わせた容量Cp、電気容量素子Cdの容量C1、中間ノードN2に関する他の寄生容量Cmisc、トランジスタT1,T2を非導通状態にするために必要なゲート線電圧VGL(i)から電圧値Lを減じた差分値ΔV、を用いて、下記式(2)のように表される。 When the gate line voltage V GL (i) is changed from H to L, the gate line voltage V GL (i) is greatly reduced from the voltage value necessary for making the transistors T1 and T2 non-conductive. The intermediate node voltage V N2 (i, j) decreases due to the slew. Specifically, the fluctuation range ΔV N2 of the intermediate node voltage V N2 (i, j) includes the capacitance Cp obtained by combining the parasitic capacitances Cp1 and Cp2, the capacitance C1 of the electric capacitance element Cd, and other parasitic capacitances related to the intermediate node N2. Cmisc, a difference value ΔV G obtained by subtracting the voltage value L from the gate line voltage V GL (i) necessary for bringing the transistors T1 and T2 into a non-conductive state, is expressed as the following equation (2). The

 (数2)
 ΔVN2≒Cp/(Cp+C1+Cmisc)×ΔV=β×ΔV  ・・・(2)
(Equation 2)
ΔV N2 ≈Cp / (Cp + C1 + Cmisc) × ΔV G = β × ΔV G (2)

 上記式(2)中のβは、電気容量素子Cdの容量C1が分母に含まれるため、上記式(1)のαより小さくなる。そのため、中間ノード電圧VN2(i,j)の変動を、比較例よりも小さくすることが可能になる。具体的に例えば、電気容量素子Cdの容量C1を、寄生容量Cp1,Cp2を組み合わせた容量Cpと同等か、それ以上にすることで、中間ノード電圧VN2(i,j)の変動を、比較例の50%以下にすることが可能になる。したがって、中間ノード電圧VN2(i,j)と画素データ電圧VN1(i,j)との差分の絶対値De1を、比較例におけるDc1よりも小さくすることができる。 Β in the above equation (2) is smaller than α in the above equation (1) because the capacitance C1 of the capacitance element Cd is included in the denominator. Therefore, the fluctuation of the intermediate node voltage V N2 (i, j) can be made smaller than that of the comparative example. Specifically, for example, by making the capacitance C1 of the electric capacitance element Cd equal to or higher than the capacitance Cp obtained by combining the parasitic capacitances Cp1 and Cp2, the fluctuation of the intermediate node voltage V N2 (i, j) is compared. It becomes possible to make it 50% or less of the example. Therefore, the absolute value De1 of the difference between the intermediate node voltage V N2 (i, j) and the pixel data voltage V N1 (i, j) can be made smaller than Dc1 in the comparative example.

 さらにこの後、画素データ電圧VN1(i,j)を突き上げるべく、補助容量線電圧VCSL(i)がLからHに変化する。すると、画素データ電圧VN1(i,j)は、補助容量素子Csを介して突き上げられることでさらに大きくなる。このとき、中間ノード電圧VN2(i,j)は、画素データ電圧VN1(i,j)の増大に伴い、電気容量素子Cdを介して突き上げられるため、画素データ電圧VN1(i,j)に追随してさらに大きくなる。したがって、中間ノード電圧VN2(i,j)と画素データ電圧VN1(i,j)との差分の絶対値De2を、上述のDe1と同程度に小さくして維持することができる。 Thereafter, the auxiliary capacitance line voltage V CSL (i) changes from L to H in order to push up the pixel data voltage V N1 (i, j) . Then, the pixel data voltage V N1 (i, j) is further increased by being pushed up through the auxiliary capacitance element Cs. At this time, the intermediate node voltage V N2 (i, j) is pushed up via the capacitance element Cd as the pixel data voltage V N1 (i, j) increases, so that the pixel data voltage V N1 (i, j) ) And become even larger. Therefore, the absolute value De2 of the difference between the intermediate node voltage V N2 (i, j) and the pixel data voltage V N1 (i, j) can be maintained as small as the above-described De1.

 一方、図7の右側(図7の左側の1垂直期間経過後)に示すように、ソース線電圧VSL(j)が負極性の電圧であり、ゲート線電圧VGL(i)がLからHになると、内部ノードN1(i,j)が、当該ソース線電圧VSL(j)である画素データ電圧VN1(i,j)を保持する。同様に、中間ノードN2(i,j)が、当該ソース線電圧VSL(j)である中間ノード電圧VN2(i,j)を保持する。このとき、画素データ電圧VN1(i,j)及び中間ノード電圧VN2(i,j)は、ともにコモン電圧VCOM(図中の一点鎖線)と同等か、それよりも小さくなる。 On the other hand, as shown on the right side of FIG. 7 (after the passage of one vertical period on the left side of FIG. 7), the source line voltage V SL (j) is a negative voltage and the gate line voltage V GL (i) is changed from L. When it becomes H, the internal node N1 (i, j) holds the pixel data voltage V N1 (i, j) which is the source line voltage V SL (j) . Similarly, the intermediate node N2 (i, j) holds the intermediate node voltage VN2 (i, j) that is the source line voltage VSL (j) . At this time, the pixel data voltage V N1 (i, j) and the intermediate node voltage V N2 (i, j) are both equal to or smaller than the common voltage V COM (one-dot chain line in the figure).

 そして、ゲート線電圧VGL(i)がHからLになると、上述の場合と同様に、中間ノード電圧VN2(i,j)が小さく減少する。したがって、中間ノード電圧VN2(i,j)と画素データ電圧VN1(i,j)との差分の絶対値De3を、比較例における差分の絶対値Dc3よりも小さくすることができる。なお、この場合、トランジスタT1,T2を非導通状態にするために必要なゲート線電圧VGL(i)が、図7の左側の場合と比べて小さくなるため、上記式(2)の差分値ΔVが小さくなる。そのため、De3は、上述したDe1よりもさらに小さくなる。 When the gate line voltage V GL (i) is changed from H to L, the intermediate node voltage V N2 (i, j) is reduced to a small value as in the case described above. Therefore, the absolute value De3 of the difference between the intermediate node voltage V N2 (i, j) and the pixel data voltage V N1 (i, j) can be made smaller than the absolute value Dc3 of the difference in the comparative example. In this case, the gate line voltage VGL (i) necessary for bringing the transistors T1 and T2 into a non-conductive state is smaller than that on the left side of FIG. ΔV G is reduced. Therefore, De3 is further smaller than De1 described above.

 この後、画素データ電圧VN1(i,j)を突き下げるべく、補助容量線電圧VCSL(i)がHからLに変化する。すると、画素データ電圧VN1(i,j)は、補助容量素子Csを介して突き下げられることで小さくなる。このとき、中間ノード電圧VN2(i,j)は、画素データ電圧VN1(i,j)の減少に伴い、電気容量素子Cdを介して突き下げられるため、画素データ電圧VN1(i,j)に追随してさらに小さくなる。したがって、中間ノード電圧VN2(i,j)と画素データ電圧VN1(i,j)との差分の絶対値De4を、上述のDe3と同程度に小さくして維持することができる。 Thereafter, the auxiliary capacitance line voltage V CSL (i) changes from H to L in order to push down the pixel data voltage V N1 (i, j) . Then, the pixel data voltage V N1 (i, j) is reduced by being pushed down through the auxiliary capacitance element Cs. In this case, the intermediate node voltage V N2 (i, j) is due to the decrease of the pixel data voltage V N1 (i, j), since the lowered thrust through the capacitance element Cd, pixel data voltage V N1 (i, It becomes smaller following j) . Therefore, the absolute value De4 of the difference between the intermediate node voltage V N2 (i, j) and the pixel data voltage V N1 (i, j) can be maintained as small as De3 described above.

 実施例では、画素回路2(i,j)にソース線電圧VSL(j)が印加されてから次にソース線電圧VSL(j)が印加されるまでの期間(1垂直期間に相当する期間)中、内部ノードN1(i,j)が保持する画素データ電圧VN1(i,j)と中間ノードN2(i,j)が保持する中間ノード電圧VN2(i,j)との差分の絶対値を、小さくして維持することができる。そのため、当該期間において、内部ノードN1(i,j)と中間ノードN2(i,j)との間のリーク電流が抑制されることで、内部ノードN1(i,j)が保持する画素データ電圧VN1(i,j)の変動が抑制される。 In the embodiment, corresponds to a period (one vertical period to the pixel circuits 2 (i, j) the source line voltage V SL (j) is then the source line voltage V SL after being applied (j) is applied The difference between the pixel data voltage V N1 (i, j) held by the internal node N1 (i, j) and the intermediate node voltage V N2 (i, j) held by the intermediate node N2 (i, j) The absolute value of can be kept small. Therefore, the leakage current between the internal node N1 (i, j) and the intermediate node N2 (i, j) is suppressed during the period, so that the pixel data voltage held by the internal node N1 (i, j) Variations in V N1 (i, j) are suppressed.

 そして、画素回路2(i,j)に新たなソース線電圧VSL(j)が印加されるときでも、内部ノードN1(i,j)がそれまで保持していた画素データ電圧VN1(i,j)は、予定通りの大きさで維持される。したがって、画素回路2(i,j)が表示する画素が、安定したものになる。 Even when a new source line voltage VSL (j) is applied to the pixel circuit 2 (i, j), the pixel data voltage VN1 (i ) held by the internal node N1 (i, j) until then. , J) is maintained at the expected size. Therefore, the pixels displayed by the pixel circuit 2 (i, j) are stable.

 以上のように、本発明の実施形態に係る液晶表示装置1及び画素回路2では、画像を安定して表示することが可能になる。 As described above, the liquid crystal display device 1 and the pixel circuit 2 according to the embodiment of the present invention can display an image stably.

<変形例>
 〈1〉 液晶表示装置1が画像を安定して表示する(内部ノードN1が保持する画素データ電圧VN1の変動を抑制する)観点では、電気容量素子Cdの容量C1は大きいほど好ましい。ただし、電気容量素子Cdの容量C1を大きくすることで、電気容量素子Cdが画素回路2を透過する光を遮るようになる(開口率が悪くなる)。したがって、電気容量素子Cdの容量C1は、必要最小限の値で留めると、好ましい。
<Modification>
<1> From the viewpoint of stably displaying an image on the liquid crystal display device 1 (suppressing fluctuations in the pixel data voltage V N1 held by the internal node N1), it is preferable that the capacitance C1 of the capacitance element Cd is larger. However, by increasing the capacitance C1 of the capacitance element Cd, the capacitance element Cd blocks light transmitted through the pixel circuit 2 (the aperture ratio is deteriorated). Therefore, it is preferable that the capacitance C1 of the electric capacitance element Cd be kept at a necessary minimum value.

 〈2〉 また、所望の値に設定した内部ノード電圧VN1(例えば、上述のように補助容量素子Csを介して突き上げまたは突き下げた後の内部ノード電圧VN1)と、ソース線電圧VSLとを同等にすることができる場合(換言すると、画素回路2(i,j)の内部ノード電圧VN1(i,j)とソース線電圧VSL(j)とを近い値にすることができる場合)は、電気容量素子Cdの容量C1が下記式(3)を満たすように設定すると、内部ノード電圧VN1の変動をより効果的に抑制することができるため、好ましい。 <2> The internal node voltage V N1 set to a desired value (for example, the internal node voltage V N1 after being pushed up or pushed down through the auxiliary capacitance element Cs as described above) and the source line voltage V SL (In other words, the internal node voltage V N1 (i, j) of the pixel circuit 2 (i, j) and the source line voltage V SL (j) can be made close to each other ). In the case), it is preferable to set the capacitance C1 of the electric capacitance element Cd so as to satisfy the following formula (3), because fluctuations in the internal node voltage VN1 can be more effectively suppressed.

 (数3)
 C1=Cp+Cmisc  ・・・(3)
(Equation 3)
C1 = Cp + Cmisc (3)

 上記式(3)のように、電気容量素子Cdの容量C1が、中間ノードN2に関する寄生容量の総和(Cp+C1+Cmisc)の50%程度になるように設定すると、トランジスタT1,T2が非導通状態であるときにリーク電流が生じたとしても、内部ノード電圧VN1の変動をより効果的に抑制することができる。このことについて、以下説明する。 When the capacitance C1 of the capacitance element Cd is set to be about 50% of the total parasitic capacitance (Cp + C1 + Cmisc) related to the intermediate node N2 as in the above equation (3), the transistors T1 and T2 are in a non-conductive state. Even if a leak current sometimes occurs, fluctuations in the internal node voltage V N1 can be more effectively suppressed. This will be described below.

 トランジスタT1,T2が非導通状態であるときに、トランジスタT2を経由して内部ノードN1から中間ノードN2に流出する電荷をQ2、トランジスタT1を経由してソース線SLから中間ノードN2に流出する電荷をQ1、内部ノードN1に関する寄生容量の総和をCpixとする。このとき、内部ノードN1から中間ノードN2に電荷Q2が流出することにより生じる内部ノードN1の電位の変化ΔVN1と、中間ノードN2にトランジスタT1,T2を経由して流入する電荷Q1,Q2により生じる中間ノードN2の電位の変化ΔVN2とは、下記式(4)に示すようになる。 When the transistors T1 and T2 are non-conductive, the charge flowing out from the internal node N1 to the intermediate node N2 via the transistor T2 is Q2, and the charge flowing out from the source line SL to the intermediate node N2 via the transistor T1 Is Q1, and the total parasitic capacitance related to the internal node N1 is Cpix. At this time, it is generated by the change ΔV N1 in the potential of the internal node N1 caused by the charge Q2 flowing out from the internal node N1 to the intermediate node N2, and the charges Q1 and Q2 flowing into the intermediate node N2 via the transistors T1 and T2. the change [Delta] V N2 of the potential of the intermediate node N2, as shown in the following equation (4).

 (数4)
 ΔVN1=-Q2/Cpix
 ΔVN2=(Q1+Q2)/(C1+Cp+Cmisc)  ・・・(4)
(Equation 4)
ΔV N1 = −Q2 / Cpix
ΔV N2 = (Q1 + Q2) / (C1 + Cp + Cmisc) (4)

 中間ノードN2の電位の変化ΔVN2により、電気容量素子Cdを介して突き上げまたは突き下げられる内部ノードN1の電位の変化ΔVN1’は、下記式(5)に示すようになる。 The potential change ΔV N1 ′ of the internal node N1 pushed up or pushed down via the electric capacitance element Cd by the potential change ΔV N2 of the intermediate node N2 is expressed by the following equation (5).

 (数5)
 ΔVN1’=C1/Cpix×ΔVN2
   =C1/(C1+Cp+Cmisc)×(Q1+Q2)/Cpix  ・・・(5)
(Equation 5)
ΔV N1 ′ = C1 / Cpix × ΔV N2
= C1 / (C1 + Cp + Cmisc) × (Q1 + Q2) / Cpix (5)

 ここで、トランジスタT1,T2の特性が等しいと、上述の前提(VSL及びVN1が同程度)より電荷Q1,Q2が同程度になる。ここで、Q1=Q2、上記式(3)、上記式(4)のΔVN1、上記式(5)を考慮すると、内部ノードN1の総合的な電位の変化ΔVN1+ΔVN1’は、下記式(6)に示すように0になる。したがって、内部ノード電圧VN1の変動をより効果的に抑制することができる。なお、ここでは説明を簡単にするためにQ1=Q2としたが、Q1≠Q2であってもQ1≒Q2であれば、内部ノード電圧VN1の変動をより効果的に抑制する効果を得ることができる。 Here, if the characteristics of the transistors T1 and T2 are equal, the charges Q1 and Q2 are approximately the same from the above assumption ( VSL and VN1 are approximately the same). Here, considering Q1 = Q2, ΔV N1 in the above equation (3), the above equation (4), and the above equation (5), the total potential change ΔV N1 + ΔV N1 ′ of the internal node N1 is expressed by the following equation: It becomes 0 as shown in (6). Therefore, fluctuations in internal node voltage V N1 can be more effectively suppressed. Here, for simplicity of explanation, Q1 = Q2, but even if Q1 ≠ Q2, if Q1≈Q2, an effect of more effectively suppressing the fluctuation of the internal node voltage V N1 can be obtained. Can do.

 (数6)
 ΔVN1+ΔVN1’=-Q2/Cpix+0.5×2×Q2/Cpix
          =0  ・・・(6)
(Equation 6)
ΔV N1 + ΔV N1 ′ = −Q2 / Cpix + 0.5 × 2 × Q2 / Cpix
= 0 (6)

 さらに、〈1〉で述べた中間ノード電圧VN2の変動を抑制する効果を考慮すると、電気容量素子Cdの容量C1の最適値は、中間ノードN2に関する他の寄生容量の総和(Cp+Cmisc)以上であり、開口率の減少を許容できる範囲内で決定すると、好ましい。また、表示装置1の仕様により、電気容量素子Cdの容量C1に応じて得られる効果は変動し得るため、表示装置1の仕様に基づいて最適値を決定すると、さらに好ましい。 Further, in consideration of the effect of suppressing the fluctuation of the intermediate node voltage V N2 described in <1>, the optimum value of the capacitance C1 of the capacitance element Cd is equal to or higher than the total of other parasitic capacitances (Cp + Cmisc) related to the intermediate node N2. It is preferable that the decrease in the aperture ratio is determined within an allowable range. Moreover, since the effect obtained according to the capacity | capacitance C1 of the electrical capacitance element Cd may change with the specifications of the display apparatus 1, it is more preferable to determine an optimal value based on the specifications of the display apparatus 1.

 〈3〉 画素回路2が補助容量素子Csを備え、当該補助容量素子Csを介して内部ノードN1が保持する画素データ電圧VN1を突き上げまたは突き下げる構成について例示したが、画素回路2が補助容量素子Csを備えなくてもよい。ただし、補助容量素子Csを備える画素回路2では、上述の通り中間ノード電圧VN2と画素データ電圧VN1との差分の絶対値がより大きくなるため、本発明を適用することで得られる効果が大きくなる。 <3> The configuration in which the pixel circuit 2 includes the auxiliary capacitance element Cs and pushes up or pushes down the pixel data voltage V N1 held by the internal node N1 via the auxiliary capacitance element Cs has been illustrated. The element Cs may not be provided. However, in the pixel circuit 2 including the auxiliary capacitance element Cs, the absolute value of the difference between the intermediate node voltage V N2 and the pixel data voltage V N1 becomes larger as described above, so that the effect obtained by applying the present invention can be obtained. growing.

 〈4〉 電気容量素子Cdは、一端が中間ノードN2に接続され、他端が内部ノードN1の電圧変動を誘起するノードに接続される限り、中間ノード電圧VN2と画素データ電圧VN1との差分の絶対値を小さくすることができる。即ち、実施形態として例示した回路構成(図3,図4参照)に限られず、他の回路構成にしてもよい。 <4> As long as one end of the capacitance element Cd is connected to the intermediate node N2 and the other end is connected to a node that induces a voltage fluctuation of the internal node N1, the electric capacitance element Cd has an intermediate node voltage V N2 and a pixel data voltage V N1 . The absolute value of the difference can be reduced. That is, the circuit configuration illustrated as the embodiment (see FIGS. 3 and 4) is not limited, and other circuit configurations may be used.

 具体的に例えば、電気容量素子Cdの一端を中間ノードN2に接続し、他端を内部ノードN1ではなく補助容量線CSL(補助容量素子Csを介して内部ノードN1が保持する画素データ電圧VN1の変動を誘起するノード)に接続してもよい。このような回路構成であっても、フィードスルーによる中間ノード電圧VN2の変動を抑制したり、補助容量線電圧VCSLの変動による画素データ電圧VN1の変動に追随して中間ノード電圧VN2を変動させたりすることが可能になる。 Specifically, for example, one end of the electric capacitance element Cd is connected to the intermediate node N2, and the other end is not the internal node N1, but the auxiliary capacitance line CSL (the pixel data voltage V N1 held by the internal node N1 via the auxiliary capacitance element Cs) May be connected to a node that induces fluctuations. Even in such a circuit configuration, a change in the intermediate node voltage V N2 due to the feedthrough is suppressed, or a change in the pixel data voltage V N1 due to the change in the auxiliary capacitance line voltage V CSL is followed by the intermediate node voltage V N2. Can be changed.

 ただし、この回路構成では、補助容量線電圧VCSLの変化に応じた中間ノード電圧VN2に対する容量結合効率が、実施形態として例示した回路構成よりも大きくなる。そのため、電気容量素子Cdの容量C1の最適値については、実施形態として例示した回路構成における最適値と異なり得る。また、実施形態として例示した回路構成のように、電気容量素子Cdの一端を中間ノードN2に接続し、他端を内部ノードN1に接続する回路構成にすると、内部ノードN1が保持する画素データ電圧VN1のあらゆる変動(例えば、コモン電圧VCOMの変動等に起因する変動)にも、中間ノード電圧VN2を効果的に追随させて変動させることが可能になるため、好ましい。 However, in this circuit configuration, the capacity coupling efficiency with respect to the intermediate node voltage V N2 according to the change in the auxiliary capacitance line voltage V CSL is larger than the circuit configuration exemplified as the embodiment. Therefore, the optimum value of the capacitance C1 of the electric capacitance element Cd may be different from the optimum value in the circuit configuration exemplified as the embodiment. Further, as in the circuit configuration exemplified in the embodiment, when the circuit configuration is such that one end of the capacitance element Cd is connected to the intermediate node N2 and the other end is connected to the internal node N1, the pixel data voltage held by the internal node N1 Any variation in V N1 (for example, variation due to variation in common voltage V COM , etc.) is preferable because the intermediate node voltage V N2 can be effectively followed and varied.

 〈5〉 画素回路2が備えるトランジスタT1,T2が、Nチャネル型のTFTである場合について例示したが、Pチャネル型のTFTであってもよい。画素回路2がPチャネル型のTFTを備える場合、上述の液晶表示装置1及び画素回路2の動作例における電圧値の正負を反転させる等の処置によって、同様の動作を実行させることが可能であり、同様の効果を得ることができる。 <5> The case where the transistors T1 and T2 included in the pixel circuit 2 are N-channel TFTs has been illustrated, but may be a P-channel TFT. When the pixel circuit 2 includes a P-channel TFT, it is possible to execute the same operation by taking measures such as reversing the positive / negative of the voltage value in the operation example of the liquid crystal display device 1 and the pixel circuit 2 described above. The same effect can be obtained.

 〈6〉 本発明を液晶表示装置1に適用する場合について例示したが、本発明は液晶表示装置1以外にも適用可能である。画素データ電圧を保持可能であるとともに、当該画素データ電圧に基づき画像を表示する表示装置であれば、液晶表示装置以外でも本発明を適用することが可能である。 <6> Although the case where the present invention is applied to the liquid crystal display device 1 is illustrated, the present invention is applicable to other than the liquid crystal display device 1. The present invention can be applied to a display device other than a liquid crystal display device as long as the display device can hold a pixel data voltage and display an image based on the pixel data voltage.

 本発明に係る画素回路や当該画素回路を備える表示装置は、例えば液晶表示装置に利用可能である。 The pixel circuit according to the present invention and the display device including the pixel circuit can be used for a liquid crystal display device, for example.

  1:  液晶表示装置
  2:  画素回路
  10: アクティブマトリクス基板
  11: 表示制御回路
  12: 電極駆動回路
  13: ソースドライバ
  14: ゲートドライバ
  20: 画素電極
  21: 表示素子部
  22: スイッチ回路
  30: 共通電極
  31: 対向基板
  32: シール材
  33: 液晶層
  GL: 補助ゲート線
  SL: ソース線
  CSL: 補助容量線
  LC: 単位液晶表示素子
  N1: 内部ノード
  N2: 中間ノード
  T1,T2: トランジスタ
  Cs: 補助容量素子
  Cd: 電気容量素子
  Cp1,Cp2: 寄生容量
1: Liquid Crystal Display Device 2: Pixel Circuit 10: Active Matrix Substrate 11: Display Control Circuit 12: Electrode Driver Circuit 13: Source Driver 14: Gate Driver 20: Pixel Electrode 21: Display Element Unit 22: Switch Circuit 30: Common Electrode 31 : Counter substrate 32: Sealing material 33: Liquid crystal layer GL: Auxiliary gate line SL: Source line CSL: Auxiliary capacitance line LC: Unit liquid crystal display element N1: Internal node N2: Intermediate node T1, T2: Transistor Cs: Auxiliary capacitance element Cd : Electric capacitance element Cp1, Cp2: Parasitic capacitance

Claims (8)

 単位表示素子を含む表示素子部と、
 前記表示素子部の一部を構成し、前記表示素子部に印加される画素データ電圧を保持する内部ノードと、
 第1及び第2トランジスタ素子の直列回路を有し、一端に印加されるソース電圧を、前記直列回路を経由して他端に接続される前記内部ノードに転送するスイッチ回路と、
 一端が前記第1及び第2トランジスタ素子を接続する中間ノードに接続され、他端が前記内部ノードまたは当該内部ノードに電圧変動を誘起するノードに接続される電気容量素子と、
 を備えることを特徴とする画素回路。
A display element unit including a unit display element;
An internal node that forms part of the display element unit and holds a pixel data voltage applied to the display element unit;
A switch circuit having a series circuit of first and second transistor elements, and transferring a source voltage applied to one end to the internal node connected to the other end via the series circuit;
A capacitance element having one end connected to an intermediate node connecting the first and second transistor elements and the other end connected to the internal node or a node that induces a voltage variation in the internal node;
A pixel circuit comprising:
 前記電気容量素子の他端が、前記内部ノードに接続されることを特徴とする請求項1に記載の画素回路。 2. The pixel circuit according to claim 1, wherein the other end of the capacitance element is connected to the internal node.  前記電気容量素子の容量が、前記第1及び第2トランジスタ素子のそれぞれの制御端子と前記中間ノードとの間に形成される寄生容量を組み合わせた容量以上であることを特徴とする請求項2に記載の画素回路。 3. The capacitance of the electric capacitance element is equal to or more than a combination of parasitic capacitances formed between respective control terminals of the first and second transistor elements and the intermediate node. The pixel circuit described.  一端が前記内部ノードに接続され、他端に補助容量電圧が印加される補助容量素子を、
 さらに備えることを特徴とする請求項2または3に記載の画素回路。
An auxiliary capacitance element having one end connected to the internal node and the other end applied with an auxiliary capacitance voltage;
The pixel circuit according to claim 2, further comprising:
 一端が前記内部ノードに接続され、他端に補助容量電圧が印加される補助容量素子を、さらに備え、
 前記電気容量素子の他端が、前記補助容量素子の他端に接続されることを特徴とする請求項1に記載の画素回路。
An auxiliary capacitance element having one end connected to the internal node and the other end applied with an auxiliary capacitance voltage;
The pixel circuit according to claim 1, wherein the other end of the electric capacitance element is connected to the other end of the auxiliary capacitance element.
 前記スイッチ回路が、前記第1及び第2トランジスタ素子の直列回路で構成され、
 前記第1トランジスタ素子の第1端子に前記ソース電圧が印加され、
 前記第1トランジスタ素子の第2端子と前記第2トランジスタ素子の第1端子とが前記中間ノードに接続されるとともに、前記第2トランジスタ素子の第2端子が前記内部ノードに接続され、
 前記電気容量素子が、前記第2トランジスタ素子と並列に、前記内部ノード及び前記中間ノードに接続されることを特徴とする請求項1~5のいずれか1項に記載の画素回路。
The switch circuit includes a series circuit of the first and second transistor elements;
The source voltage is applied to a first terminal of the first transistor element;
A second terminal of the first transistor element and a first terminal of the second transistor element are connected to the intermediate node, and a second terminal of the second transistor element is connected to the internal node;
6. The pixel circuit according to claim 1, wherein the capacitance element is connected to the internal node and the intermediate node in parallel with the second transistor element.
 前記電気容量素子が、半導体層及び金属配線層の交差容量と複数の金属配線の交差容量とMOS容量の内の少なくとも1つの容量を備えて構成されることを特徴とする請求項1~6のいずれか1項に記載の画素回路。 7. The electric capacitance element according to claim 1, wherein the electric capacitance element includes at least one of a cross capacitance of a semiconductor layer and a metal wiring layer, a cross capacitance of a plurality of metal wires, and a MOS capacitance. The pixel circuit according to any one of the above items.  請求項1~7のいずれか1項に記載の画素回路を行方向及び列方向にそれぞれ複数配置して画素回路アレイを構成し、
 前記スイッチ回路の一端に前記ソース電圧を印加するソース電圧印加回路と、
 前記スイッチ回路の導通の有無を制御するゲート電圧を、前記スイッチ回路に印加するゲート電圧印加回路と、
 を備えることを特徴とする表示装置。
A pixel circuit array is configured by arranging a plurality of pixel circuits according to any one of claims 1 to 7 respectively in a row direction and a column direction,
A source voltage application circuit for applying the source voltage to one end of the switch circuit;
A gate voltage application circuit that applies a gate voltage to the switch circuit to control the presence or absence of conduction of the switch circuit;
A display device comprising:
PCT/JP2012/062447 2011-07-14 2012-05-16 Pixel circuit and display device Ceased WO2013008528A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015167730A1 (en) * 2014-05-01 2015-11-05 Pixtronix, Inc. Display circuit incorporating data feedback loop

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05142573A (en) * 1991-11-22 1993-06-11 Toshiba Corp Liquid crystal display device
JPH08201852A (en) * 1995-01-26 1996-08-09 Semiconductor Energy Lab Co Ltd Active matrix display device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05142573A (en) * 1991-11-22 1993-06-11 Toshiba Corp Liquid crystal display device
JPH08201852A (en) * 1995-01-26 1996-08-09 Semiconductor Energy Lab Co Ltd Active matrix display device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015167730A1 (en) * 2014-05-01 2015-11-05 Pixtronix, Inc. Display circuit incorporating data feedback loop
US9378686B2 (en) 2014-05-01 2016-06-28 Pixtronix, Inc. Display circuit incorporating data feedback loop

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