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WO2013005940A2 - Procédé de fabrication d'un dispositif à del blanches dans lequel il est utilisé une feuille préformée en une substance fluorescente - Google Patents

Procédé de fabrication d'un dispositif à del blanches dans lequel il est utilisé une feuille préformée en une substance fluorescente Download PDF

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Publication number
WO2013005940A2
WO2013005940A2 PCT/KR2012/005059 KR2012005059W WO2013005940A2 WO 2013005940 A2 WO2013005940 A2 WO 2013005940A2 KR 2012005059 W KR2012005059 W KR 2012005059W WO 2013005940 A2 WO2013005940 A2 WO 2013005940A2
Authority
WO
WIPO (PCT)
Prior art keywords
molding structure
phosphor
manufacturing
led element
silicone resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/005059
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English (en)
Korean (ko)
Other versions
WO2013005940A3 (fr
Inventor
박승현
이계선
조용익
이상헌
정성훈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea Photonics Technology Institute
Original Assignee
Korea Photonics Technology Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Photonics Technology Institute filed Critical Korea Photonics Technology Institute
Publication of WO2013005940A2 publication Critical patent/WO2013005940A2/fr
Publication of WO2013005940A3 publication Critical patent/WO2013005940A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations

Definitions

  • the present invention relates to a method for manufacturing an LED device, and more particularly to a manufacturing method for an LED device that emits white light.
  • LED (LED) devices basically emit monochromatic light. Therefore, an additional packaging process is required to emit white light using the same, and a conventional packaging process may cause a problem of uneven coating in a coating process for implementing white color.
  • a white phosphor is mixed with an epoxy or a silicone resin, injected into a syringe, and a package is formed by pneumatic pressure. In this case, color coordinates are determined according to the mixing ratio of the phosphor and the amount of the resin.
  • the resin varies in viscosity with temperature, and the phosphor powder is also precipitated over time, and the mixing ratio of the mixed liquid injected into the syringe may not be constant. Therefore, when the amount of production increases, there is a problem that the ratio of the initially injected phosphor mixture and the last injected phosphor mixture are different, resulting in the shaking of the white color coordinates during the manufacturing process.
  • a phosphor coating method is proposed by using a silkscreen method so that a resin containing silicon resin and a phosphor that does not undergo an application process has a specific height on a submount substrate on which an LED element is disposed. have.
  • This method can reduce the dispersion of color coordinates that occurred in the conventional coating process, and can also reduce the color deviation of each device.
  • this method is limited to the devices that can be used, and the submount must use a substrate that can additionally conduct electricity, and in terms of the cost of the product, it causes a cost increase. Therefore, a process of directly arranging and applying an element directly on a transfer film without using a submount has been attempted.
  • a curing process of 2 to 4 hours or more at a high temperature of 150 is essential because of the thermosetting property of the resin containing the phosphor. .
  • the transfer film is difficult to implement such a process in that the film is not applicable because the film is destroyed other than the polyimide film.
  • the most demanding time in the packaging process is the thermosetting process of the resin containing the phosphor, which is more than 95% of the total process is consumed in the curing process, the curing process has been completed before the molding process By applying a resin containing, it is possible to reduce the process time.
  • the ratio of the luminous intensity emitted from the upper surface of the device occupies about 90% of the ratio of the luminous intensity emitted from the device, and the ratio of the light beam emitted from the vertical surface of the attachment part of the device is about 10%
  • the distribution result of the color coordinates for each angle of the device is different within the direction angle range.
  • a resin containing a phosphor should be formed on a surface perpendicular to the light emitting surface of the device.
  • the implementation of this process involves changing the viscosity of the resin generated during the thermosetting process in the process of masking and molding the resin in the silk screen method. Since there is a problem that the constant width and thickness are not formed for the surface perpendicular to each device light emitting surface is not easy.
  • the present invention has been made to solve the above-mentioned problems, and an object thereof is to provide a method of manufacturing a white LED element having high color reproducibility by maintaining uniformity of phosphor compounding ratio.
  • a method of manufacturing a white LED device includes a first molding structure manufacturing step of manufacturing a first molding structure in which a plurality of protruding shapes having a predetermined width are formed on one surface thereof; A second molding structure manufacturing step of manufacturing a second molding structure in which an unevenness is formed in an embossed or engraved shape on one side thereof; One surface of the first molding structure manufactured in the first molding structure manufacturing step and the second molding structure manufactured in the second molding structure manufacturing step face each other, and the first molding structure and the second molding structure Arranging molding structures spaced apart from each other to have a predetermined distance therebetween; A molded article manufacturing step of manufacturing a silicone resin molded body by inserting a silicone resin including a phosphor between the first molding structure and the second molding structure disposed in the molding structure arrangement step; A separation step of separating the first molding structure and the second molding structure from the silicone resin molded body through the molded body manufacturing step; A film mounting step of mounting the film on a surface on which the uneven
  • the monochromatic LED element mounted in the monochromatic LED element mounting step includes a light intensity and a forward voltage depending on the type, concentration, and thickness of the phosphor included in the silicone resin molded product manufactured in the molded object manufacturing step to emit white light.
  • the branch is characterized in that the monochromatic LED element.
  • the silicone resin molded product manufactured in the molded object manufacturing step includes 10% to 60% by weight of a YAG-based yellow phosphor.
  • the silicate-based red phosphor and the green phosphor is mixed with 1% to 10% by weight of the phosphor, but the nitride-based phosphor is characterized in that it comprises 1% to 10% by weight.
  • the silicone resin molded body manufactured in the molding unit manufacturing step includes a silicate-based yellow phosphor containing 10% to 50% by weight.
  • the silicate-based red phosphor and the green phosphor is mixed with 1% to 10% by weight of the phosphor, but the nitride-based phosphor is characterized in that it comprises 1% to 10% by weight.
  • the silicone resin molded body manufactured in the molding unit manufacturing step includes a mixed phosphor of silicate-based red phosphor, green phosphor, and blue phosphor. It is characterized in that it comprises 10% by weight to 30% by weight or 30% by weight of the nitride-based phosphor.
  • the thickness of the thin side of the silicone resin molded body produced in the molded article manufacturing step is 30 to 100um, characterized in that the thickness of the thick side is 150 to 300um.
  • FIG. 1 is a view showing a first molding structure of the present invention.
  • FIG. 2 is a view showing a frame formed by using the first molding structure and the second molding structure of the present invention.
  • FIG. 3 is a view showing a silicone resin molded article of the present invention.
  • FIG. 4 is a view in which a film and a solid color LED are attached to the silicone resin molded body of the present invention.
  • FIG. 5 is a view showing a single color LED mounted on a silicone resin molded body having different films of the present invention.
  • FIG. 6 is a flowchart illustrating a method of manufacturing a white LED device according to the present invention.
  • the first molding structure 110 is manufactured.
  • the first molding structure 110 is manufactured to have a plurality of protruding shapes 112 on one surface thereof.
  • the protruding shape 112 formed on one surface of the first molding structure 110 may include the monochromatic LED element 150 so that the monochromatic LED element 150 may be inserted into the silicone resin molded body 130 manufactured in step S104. It has a predetermined width to fit the size.
  • the position of the protruding shape 112 may be changed depending on the arrangement of the LED element in the wafer state.
  • the first molding structure 110 may be hardened at a high temperature, and may be manufactured to have a different shape as needed.
  • a pad capable of bonding such as a flip chip structure
  • the position can be manufactured to be applied to the device located at the lower end, as shown in Figure 1 (b), the first molding structure 210 is a pad of the pad to enable the wire bonding, such as Top View structure
  • the location may be made to be applicable to an element located at the top.
  • the flip chip structure will be mainly described, and the same content to the top view structure will be omitted.
  • This step is to prepare a second molding structure 120 capable of high temperature curing in the form of a flat plate, as shown in Figure 2, in order to increase the light extraction efficiency of the phosphor film on one side 122 It is preferably formed.
  • the unevenness 122 formed may be embossed or intaglio, and is preferably manufactured using tungsten carbide or a material corresponding thereto at high temperature.
  • the unevenness 122 may be a wafer in which the unevenness 122 is optionally formed by wet etching the surface of the silicon substrate.
  • the second molding structure is similarly manufactured in the top view structure as shown in FIG.
  • This step is a step of disposing the first molding structure 110 and the second molding structure 120 manufactured in step S101 and step S102, as shown in Figure 2, spaced apart from each other to have a predetermined distance
  • the surface on which the protruding shape 112 of the first molding structure 110 is formed and the surface on which the uneven surface 122 of the second molding structure 120 is formed are disposed to face each other.
  • the distance between the protruding shape 112 of the first molding structure 110 and the second molding structure 120 is maintained so that the distance of 30 to 100um, the protruding shape 112 in the first molding structure 110
  • the distance between the portion that is not formed and the second molding structure 120 is preferably spaced apart to maintain a distance of 150 to 300um.
  • a mold is formed on both sides of the first molding structure 110 and the second molding structure 120, and the release film of the transparent fluorine-based resin is formed so that the silicone resin molded body 130 can be separated smoothly. It may be preferable to be mounted on the first molding structure 110 and the second molding structure 120 or a release solution is applied.
  • FIG. 3 (b) The arrangement of the second molding structure on the first molding structure 210 of the top view structure shown in FIG. 1 (b) is shown in FIG. 3 (b). As shown, it can be seen that in such a structure, a hole-shaped structure is applied to enable wire bonding in which the electrical connection is possible in the top view device structure.
  • a structure that can further apply surface grinding may be applied to expose the holes or to adjust the thickness of the shaped body.
  • the molding is molded by inserting a silicone resin between the first molding structure 110 and the second molding structure 120 using the molding structure arranged in step S103.
  • the silicone resin molded body 130 manufactured in this step is formed by the first molding structure 110 and the second molding structure 120, the shape according to the brightness distribution of the LED element, the white color coordinate value to be manufactured Therefore, the thickness of the silicone resin molded body 130 is determined.
  • the combination of phosphors is changed according to the white color coordinate value to be manufactured.
  • the silicone resin molded body 130 in this step includes a YAG-based yellow phosphor of 10% to 60% by weight or the silicate-based It is possible that the yellow phosphor contains from 10% to 50% by weight.
  • a YAG-based yellow phosphor or a silicate-based yellow phosphor and a silicate-based red phosphor and a green phosphor are mixed, or a nitride-based phosphor 1% by weight It is preferred to include from 10% by weight.
  • the silicone resin molded body 130 in this step is a mixed phosphor in which silicate-based red phosphor, green phosphor, and blue phosphor are mixed. It will be preferred to include 10% to 30% by weight, or 10% to 30% by weight of the phosphor of the nitride series.
  • the silicone resin molded body 130 produced in this step is preferably the thickness of the thin side of 30 to 100um, it is preferable that the thickness of the thick side is 150 to 300um due to the protrusion shape (112).
  • step S104 When the manufacture of the silicone resin molded body 130 manufactured through step S104 is performed, the first molding structure 110 and the second molding structure 120 are removed and separated, respectively.
  • the film 140 is mounted on the silicone resin molded body 130 formed by separating the first molding structure 110 and the second molding structure 120 through the step S105, wherein the film 140 to be mounted is shown in FIG. 4. As shown in FIG. 1, mounting is performed on one surface of the silicone resin molded body 130 on which the unevenness 134 is formed. As such, since the film 140 is mounted on the silicone resin molded body 130, there is an advantage of shortening the resin curing time required in the conventional packaging process.
  • the monochromatic LEDs manufactured on a single wafer have LED elements having various luminosities and voltages. Accordingly, when the white LEDs are manufactured using the same, the scattering degree of the white characteristic value is changed, so that each monochromatic LED is suppressed.
  • the film 140 having different thicknesses according to the classification range of the LED element 150 it is possible to manufacture a white LED having the same white characteristic value.
  • the solid color LED is mounted on the silicone resin molded body 130 on which the film 140 is mounted through step S106.
  • the device to be mounted may be equipped with an LED device emitting blue light or an LED device emitting ultraviolet light, and the position at which the device is mounted may be a protruding shape of the first molding structure 110 ( 112 is attached to the groove 132 formed in the silicone resin molded body 130.
  • the device is mounted in the groove 232 formed in the same manner in the top view structure.
  • the present invention is applied to the industrial field related to the LED element.

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Abstract

La présente invention concerne un procédé de fabrication d'un dispositif à diodes électroluminescentes (DEL) et, plus précisément, un procédé de fabrication d'un dispositif à DEL blanches. Le procédé permet de fabriquer un dispositif à DEL blanches ayant les mêmes caractéristiques de couleur blanche, même lorsqu'il est monté des dispositifs à DEL monochromes ayant diverses intensités lumineuses et tensions. Le procédé consiste à produire une partie de moulage en résine de silicium par l'intermédiaire de la préfabrication d'une première structure de moulage en forme de saillie et d'une seconde structure de moulage en forme de saillies et de cavités, puis à fixer un film à la partie de moulage en résine de silicium produite.
PCT/KR2012/005059 2011-07-01 2012-06-27 Procédé de fabrication d'un dispositif à del blanches dans lequel il est utilisé une feuille préformée en une substance fluorescente Ceased WO2013005940A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110065369A KR101173251B1 (ko) 2011-07-01 2011-07-01 프리폼 형광체 시트가 사용된 백색 엘이디 소자 제조 방법
KR10-2011-0065369 2011-07-01

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WO2013005940A2 true WO2013005940A2 (fr) 2013-01-10
WO2013005940A3 WO2013005940A3 (fr) 2013-03-14

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PCT/KR2012/005059 Ceased WO2013005940A2 (fr) 2011-07-01 2012-06-27 Procédé de fabrication d'un dispositif à del blanches dans lequel il est utilisé une feuille préformée en une substance fluorescente

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KR (1) KR101173251B1 (fr)
WO (1) WO2013005940A2 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
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WO2013112435A1 (fr) * 2012-01-24 2013-08-01 Cooledge Lighting Inc. Dispositifs électroluminescents présentant des puces distinctes à luminophore et procédés de fabrication associés
US8896010B2 (en) 2012-01-24 2014-11-25 Cooledge Lighting Inc. Wafer-level flip chip device packages and related methods
US8907362B2 (en) 2012-01-24 2014-12-09 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US9343444B2 (en) 2014-02-05 2016-05-17 Cooledge Lighting, Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
CN118315515A (zh) * 2024-03-08 2024-07-09 深圳市正东明光电子有限公司 一种白光芯片的封装工艺以及白光芯片的封装结构

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KR101446038B1 (ko) * 2012-10-23 2014-10-01 한국생산기술연구원 커팅식 형광층 제조방법 및 이를 이용한 발광 다이오드 패키지 제조방법
KR101405902B1 (ko) * 2012-11-15 2014-06-17 한국생산기술연구원 이형제를 사용한 형광층 제조방법 및 발광 다이오드 패키지 제조방법
KR20140076767A (ko) * 2012-12-13 2014-06-23 (주)라이타이저코리아 발광 다이오드용 형광체 제조 방법
KR101440722B1 (ko) * 2013-03-13 2014-09-17 한국광기술원 광공간을 갖는 발광장치의 제조방법 및 이에 의한 발광장치
KR101457474B1 (ko) 2013-06-14 2014-11-04 (주)라이타이저코리아 형광층 제조 장비
KR101591062B1 (ko) * 2013-12-19 2016-02-02 한국생산기술연구원 탈착트레이를 포함하는 발광 다이오드 패키지용 형광층 제조장치, 그리고 이를 이용한 발광 다이오드 패키지용 형광층 제조방법 및 발광 다이오드 패키지 제조방법
CN105431953B (zh) * 2014-06-05 2018-03-16 上海富迪照明电器有限公司 基于固态荧光材料的嵌入式白光led封装结构及其制作方法
KR101633872B1 (ko) * 2014-11-27 2016-06-28 한국광기술원 형광체 시트를 이용한 발광다이오드 소자 제조방법
KR101787984B1 (ko) * 2015-06-18 2017-10-24 한국생산기술연구원 형광체막 제조방법
KR101689179B1 (ko) * 2015-07-08 2016-12-23 정진수 엘이디 형광체 플레이트 제조 방법
KR101863637B1 (ko) * 2016-01-13 2018-07-05 시그네틱스 주식회사 칩 몰딩 장치

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KR100610278B1 (ko) 2004-12-14 2006-08-09 알티전자 주식회사 고휘도 백색발광다이오드 및 그의 제조방법
KR100849813B1 (ko) 2007-03-22 2008-07-31 삼성전기주식회사 발광소자 패키지 제조방법 및 발광소자 패키지 제조용 몰드
JP2010123620A (ja) * 2008-11-17 2010-06-03 Stanley Electric Co Ltd 半導体装置の製造方法

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US9184351B2 (en) 2012-01-24 2015-11-10 Cooledge Lighting Inc. Polymeric binders incorporating light-detecting elements
US9236502B2 (en) 2012-01-24 2016-01-12 Cooledge Lighting, Inc. Wafer-level flip chip device packages and related methods
US8748929B2 (en) 2012-01-24 2014-06-10 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US8759125B2 (en) 2012-01-24 2014-06-24 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US8785960B1 (en) 2012-01-24 2014-07-22 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US8884326B2 (en) 2012-01-24 2014-11-11 Cooledge Lighting Inc. Polymeric binders incorporating light-detecting elements and related methods
US8896010B2 (en) 2012-01-24 2014-11-25 Cooledge Lighting Inc. Wafer-level flip chip device packages and related methods
US8907362B2 (en) 2012-01-24 2014-12-09 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US8680558B1 (en) 2012-01-24 2014-03-25 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
WO2013112435A1 (fr) * 2012-01-24 2013-08-01 Cooledge Lighting Inc. Dispositifs électroluminescents présentant des puces distinctes à luminophore et procédés de fabrication associés
US9190581B2 (en) 2012-01-24 2015-11-17 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US9276178B2 (en) 2012-01-24 2016-03-01 Cooledge Lighting, Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US9496472B2 (en) 2012-01-24 2016-11-15 Cooledge Lighting Inc. Wafer-level flip chip device packages and related methods
US9478715B2 (en) 2012-01-24 2016-10-25 Cooledge Lighting Inc. Discrete phosphor chips for light-emitting devices and related methods
US9472732B2 (en) 2012-01-24 2016-10-18 Cooledge Lighting, Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US9343443B2 (en) 2014-02-05 2016-05-17 Cooledge Lighting, Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US9343444B2 (en) 2014-02-05 2016-05-17 Cooledge Lighting, Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
CN118315515A (zh) * 2024-03-08 2024-07-09 深圳市正东明光电子有限公司 一种白光芯片的封装工艺以及白光芯片的封装结构

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KR101173251B1 (ko) 2012-08-10

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